Abrégé

Provided are an inorganic-particle composite exhibiting excellent dispersion stability in a polar solvent, a production method therefor, and an inorganic-particle composite dispersion. This method for producing an inorganic-particle composite includes a step (A) in which a water-soluble salt is added to an inorganic powder and dry mixed or mixed as a paste, and a step (B) in which the same is washed after step (A) to obtain an inorganic-particle composite that contains a component derived from the water-soluble salt, wherein the water-soluble salt is a water-soluble salt for which the acid dissociation constant pKa (H2O) of the acid of the counter anion of the water-soluble salt is greater than zero.

Classes IPC  ?

• C01B 21/064 - Composés binaires de l'azote avec les métaux, le silicium ou le bore avec le bore
• C01B 32/174 - DérivatisationSolubilisation dans les solvantsDispersion dans les solvants
• C01B 32/19 - Préparation par exfoliation
• C01G 39/00 - Composés du molybdène

Abrégé

A solar cell element according to one embodiment of the present invention comprises: a semiconductor substrate; an antireflection film disposed in a first region on one mainsurface of the semiconductor substrate; and a frontsurface electrode which is disposed in a second region on the one main surface of the semiconductor substrate, comprises silver as amain component and contains a tellurium-based glass containing tellurium, tungsten, and bismuth as essential components. A method for manufacturing the above solar cell element comprises: a first step of forming the antireflection film on the one main surface of the semiconductor substrate; a second step of printing on the antireflection film a conductive paste containing a conductive powder comprising silver as a main component, a tellurium-based glass frit containing tellurium, tungsten, and bismuth as essential components, and an organic vehicle; and a third step of disposing the antireflection film in the first region of the semiconductor substrate and forming the front surface electrode in the second region of the semiconductor substrate, by firing the conductive paste and eliminating the antireflection film positioned under the conductive paste.

Classes IPC  ?

• H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
• H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
• H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique
• H01L 31/0224 - Electrodes