A SiC single crystal substrate of an embodiment is a SiC single crystal substrate wherein the main plane of the SiC single crystal substrate has an off angle of 0° to 6° to the (0001) plane in the <11-20> direction and an off angle of 0° to 0.5° to the (0001) plane in the <1-100> direction, and includes non-MP defects wherein when the Si surface is etched in molten KOH at 500° C. for 15 minutes, the non-MP defects that appear by etching are hexagonal and have no core, the area of the observed etch pit of the non-MP defect is more than 10% larger than that of the observed etch pit of the TSD and is less than 110% of that of the observed etch pit of the micropipe (MP), and a transmission X-ray topography image of the non-MP defect is distinguishable from the transmission X-ray topography image of the micropipe (MP), wherein etch pits, which are identified as the non-MP defects, appear in the range of 0.1/cm2 to 50/cm2.
C30B 29/60 - Monocristaux ou matériaux polycristallins homogènes de structure déterminée caractérisés par leurs matériaux ou par leur forme caractérisés par la forme
C30B 33/10 - Gravure dans des solutions ou des bains fondus
H10D 62/832 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux étant des matériaux du groupe IV, p. ex. Si dopé B ou Ge non dopé étant des matériaux du groupe IV comprenant deux éléments ou plus, p. ex. SiGe
2.
RESIST PATTERN INSPECTION METHOD, RESIST PATTERN MANUFACTURING METHOD, SUBSTRATE SELECTION METHOD, AND MANUFACTURING METHOD FOR SEMICONDUCTOR PACKAGE SUBSTRATE OR PRINTED CIRCUIT BOARD
A resist pattern inspection method includes performing an outer appearance inspection on a resist pattern based on light emission from a substrate on which the resist pattern is formed. A resist pattern manufacturing method includes forming a resist pattern on a substrate; and impregnating the resist pattern with a light-emitting material after the forming of the resist pattern. A substrate selection method includes performing an outer appearance inspection on a resist pattern based on light emission from a substrate on which the resist pattern is formed; and evaluating the resist pattern based on the outer appearance inspection in performing the outer appearance inspection. A manufacturing method for a semiconductor package substrate or a printed circuit board includes forming a conductor pattern by performing etching process or plating process on the substrate in which evaluation of the resist pattern in the substrate selection method satisfies a reference.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G03F 7/105 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des substances, p. ex. des indicateurs, pour obtenir des images visibles
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
3.
INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING PROGRAM
An information processing system according to an example includes at least one processor. The at least one processor is configured to: repeat optimization using a regression model, which calculates a physical property value of a composition from a feature vector indicating feature quantities of a candidate component group based on a plurality of candidate components, while performing exclusion processing for excluding at least one candidate component from the candidate component group; and identify feature quantities of one or more candidate components remaining after the repetition. The exclusion processing includes: selecting the feature vector corresponding to a solution for the physical property value obtained by the optimization; and excluding the at least one candidate component from the candidate component group based on the selected feature vector.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a thin thickness, and high carrier concentration uniformity. A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more and a thickness of 460 μm or less. The SiC epitaxial layer has a carrier concentration variation of 20% or less.
An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a low triangular defect density, and high carrier concentration uniformity. According to the present invention, a SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more. The SiC epitaxial layer has a triangular defect density of 0.2 pieces/cm2 or less and a carrier concentration variation of 20% or less.
An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a thin thickness, and few triangular defects. A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more and a thickness of 460 μm or less. The SiC epitaxial layer has a triangular defect density of 0.2 pieces/cm2 or less.
An aluminum alloy member (1) for forming a fluoride coating thereon is intended for use as a component of a semiconductor production apparatus. The composition of the aluminum alloy member includes Mg: 1.2 mass % to 4.5 mass % and Si: 0.2 mass % to 1.0 mass %, with the excess Mg concentration being 0.5 mass % or more.
C22C 21/08 - Alliages à base d'aluminium avec le magnésium comme second constituant majeur avec du silicium
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
8.
WIRING SUBSTRATE PRODUCTION METHOD, WIRING SUBSTRATE, RETICLE, AND EXPOSURE PATTERN-RENDERING DATA STRUCTURE
Provided is a method for manufacturing a wiring substrate. The method includes forming a resist layer on a support body, exposing the resist layer, developing the exposed resist layer to form an opening in the resist layer, forming a metal wiring in the opening, and removing the resist layer after the metal wiring is formed. In the exposing of the resist layer, a wiring exposure pattern that corresponds to the metal wiring, and a dummy exposure pattern that does not correspond to the metal wiring are exposed to the resist layer. At least a part of the dummy exposure pattern is located in a region within 200 μm from an end portion of the wiring exposure pattern.
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
G03F 1/38 - Masques à caractéristiques supplémentaires, p. ex. marquages pour l'alignement ou les tests, ou couches particulièresLeur préparation
A member 1 for forming wiring includes an adhesive layer 10 and a metal layer 20. The adhesive layer 10 is composed of an adhesive composition containing conductive particles 12 and a thermosetting component. The metal layer 20 is disposed on the adhesive layer 10. In such a member 1 for forming wiring, the adhesive layer contains an epoxy resin and a phenolic resin, as the thermosetting component.
An underfill material includes a curable resin component and inorganic particles. A ratio on a number basis of particles with a particle diameter of 0.5 μm or less included in the inorganic particles is 10% or less of the total inorganic particles, and a ratio on a number basis of particles with a particle diameter of 3 μm or more is 5% or less of the total inorganic particles.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/498 - Connexions électriques sur des substrats isolants
A SiC epitaxial wafer according to the present embodiment includes: a SiC substrate; and a SiC epitaxial layer deposited on the SiC substrate, wherein, in the SiC substrate, a density of basal plane dislocations is 1/cm2 or more and 3000/cm2 or less, and wherein, in the SiC epitaxial layer, a density of double Shockley (2SSF) type stacking faults is 4/cm2 or more and 10/cm2 or less, and a density of stacking faults other than the double Shockley (2SSF) type stacking faults is 2/cm2 or less.
H01L 29/34 - Corps semi-conducteurs ayant des surfaces polies ou rugueuses les défectuosités étant sur la surface
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/32 - Corps semi-conducteurs ayant des surfaces polies ou rugueuses les défectuosités étant à l'intérieur du corps semi-conducteur
12.
METHOD FOR ANALYZING GAS CONTAINING NITROSYL FLUORIDE, AND METHOD FOR REMOVING NITROSYL FLUORIDE IN GAS
There is provided a method for analyzing gas containing nitrosyl fluoride capable of highly accurately and safely quantitatively determining oxygen gas and nitrogen gas contained in mixed gas containing nitrosyl fluoride and at least one of the oxygen gas and the nitrogen gas. The method for analyzing gas containing nitrosyl fluoride includes: a conversion step of bringing the mixed gas into contact with a reactant reacting with the nitrosyl fluoride to generate nitrogen oxide, and converting the nitrosyl fluoride into the nitrogen oxide by a reaction between the nitrosyl fluoride and the reactant; a removal step of bringing the gas after the conversion step into contact with an adsorbent adsorbing the nitrogen oxide, and removing the nitrogen oxide from the gas by the adsorption of the nitrogen oxide; and an analysis step of analyzing the gas after the removal step and quantitatively determining the oxygen gas and the nitrogen gas.
B01D 53/04 - Séparation de gaz ou de vapeursRécupération de vapeurs de solvants volatils dans les gazÉpuration chimique ou biologique des gaz résiduaires, p. ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par adsorption, p. ex. chromatographie préparatoire en phase gazeuse avec adsorbants fixes
A simulation device includes a determination unit configured to compute a distance between an atom forming a first molecule and an atom forming a second molecule while performing a molecular dynamics computation, and determine whether or not the first molecule and the second molecule are in close proximity of each other, an imparting unit configured to impart a parameter for increasing a reaction probability with respect to the first molecule and/or the second molecule in a case where the determination unit determines that the first molecule and the second molecule are in close proximity of each other, an elementary reaction generation unit configured to generate an elementary reaction in a transition state, based on a chemical reaction identified in the molecular dynamics computation, and a reaction rate constant computation unit configured to compute a reaction rate constant of the generated elementary reaction.
G16C 10/00 - Chimie théorique computationnelle, c.-à-d. TIC spécialement adaptées aux aspects théoriques de la chimie quantique, de la mécanique moléculaire, de la dynamique moléculaire ou similaires
G16C 20/10 - Analyse ou conception des réactions, des synthèses ou des procédés chimiques
G16C 20/70 - Apprentissage automatique, exploration de données ou chimiométrie
14.
FLUORINE-CONTAINING ETHER COMPOUND, LUBRICANT FOR MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING MEDIUM
A fluorine-containing ether compound is provided which is represented by the following formula: R1—R2—CH2—R3a—CH2—R4a—CH2—R3b—CH2—R4b—CH2—R3c—CH2—R5—R6 (R3a, R3b, and R3c are perfluoropolyether chains; R2, R4a, R4b, and R5 are a divalent linking group having at least one selected from the group consisting of a hydroxyl group, an amino group, a carboxy group, and a sulfo group; R2 has an oxygen atom at an end that is bonded to R1; R5 has an oxygen atom at an end that is bonded to R6; R1 and R6 are an organic group having 1 to 50 carbon atoms or a hydrogen atom, and at least one of them is a group in which a cyano group is bonded to a carbon atom of an organic group having 1 to 8 carbon atoms).
C08G 65/26 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir d'éthers cycliques par ouverture d'un hétérocycle à partir d'éthers cycliques et d'autres composés
C10M 107/38 - Compositions lubrifiantes caractérisées en ce que le matériau de base est un composé macromoléculaire contenant des halogènes
C10N 20/04 - Poids moléculaireRépartition du poids moléculaire
C10N 40/18 - Usages électriques ou magnétiques en relation avec des enregistrements sur bandes ou disques magnétiques
G11B 5/725 - Revêtements protecteurs, p. ex. antistatiques contenant un lubrifiant
A slurry containing abrasive grains and a liquid medium, in which the abrasive grains contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and when the slurry is brought into contact with a surface to be polished to bring the abrasive grains into contact with the surface to be polished, the slurry yields 0.13 or more in X-ray photoelectron spectroscopy as a ratio of the lowest valence among the plurality of valences of the metal.
Provided are a catalyst, which enables the production of a high molecular weight olefin polymer having a polar group and being usable for various applications at a high catalytic activity, and a method for producing such an olefin polymer. Use is made of, as a polymerization catalyst for an olefin having a polar group, a metal complex represented by general formula (C1) [wherein: M represents an element in group 10 of the periodic table; X represents a phosphorus atom (P) or arsenic atom (As); R5 to R11 are as described in claims; at least one of R6 and R7 is an aralkyl group represented by general formula (2) (wherein R12 to R21 are as described in claims); L represents an electron-donating ligand; and q is 0, ½, 1 or 2].
Provided are a catalyst, which enables the production of a high molecular weight olefin polymer having a polar group and being usable for various applications at a high catalytic activity, and a method for producing such an olefin polymer. Use is made of, as a polymerization catalyst for an olefin having a polar group, a metal complex represented by general formula (C1) [wherein: M represents an element in group 10 of the periodic table; X represents a phosphorus atom (P) or arsenic atom (As); R5 to R11 are as described in claims; at least one of R6 and R7 is an aralkyl group represented by general formula (2) (wherein R12 to R21 are as described in claims); L represents an electron-donating ligand; and q is 0, ½, 1 or 2].
A semiconductor device including: a semiconductor component including a semiconductor chip; a heat dissipation member; and a thermally conductive sheet interposed between the semiconductor component and the heat dissipation member. The thermally conductive sheet includes a resin sheet having a through-hole, and a thermally conductive portion filled in the through-hole. The thermally conductive sheet and the heat dissipation member may be provided on a side opposite to a circuit surface of the semiconductor chip. The heat dissipation member may be a heat spreader or a heat sink.
A computer is caused to function as a condition storage unit configured to store one or more conditions represented by coordinates in a multi-dimensional space, a candidate condition generating unit configured to generate a plurality of candidate conditions represented by coordinates in the multi-dimensional space, a candidate condition selecting unit configured to calculate, for a coordinate position of each of the candidate conditions, a shortest distance to coordinate positions of the one or more conditions, and to select, as a coordinate position of a new condition, a coordinate position of one of the candidate conditions for which the shortest distance is longest, and a new condition adding unit configured to add the selected coordinate position of the new condition to the coordinate positions of the one or more conditions, wherein the candidate condition selecting unit repeats, until a termination condition is satisfied, a process of calculating, for a coordinate position of each of the candidate conditions, a shortest distance to the coordinate positions of the one or more conditions to which the new condition is added, and selecting, as a coordinate position of a new condition, a coordinate position of one of the candidate conditions for which the shortest distance is longest.
There is provided a gas-filled container in which the purity of filled (E)-1,1,1,4,4,4-hexafluoro-2-butene is less likely to decrease over a long term. The gas-filled container includes: a filled container filled with (E)-1,1,1,4,4,4-hexafluoro-2-butene. A part in contact with the filled (E)-1,1,1,4,4,4-hexafluoro-2-butene of the filled container is formed of a metal having a copper concentration of less than 0.5% by mass.
F17C 1/14 - Récipients sous pression, p. ex. bouteilles de gaz, réservoirs de gaz, cartouches échangeables en aluminiumRécipients sous pression, p. ex. bouteilles de gaz, réservoirs de gaz, cartouches échangeables en acier amagnétique
F17C 5/00 - Procédés ou appareils pour remplir des récipients sous pression de gaz liquéfiés, solidifiés ou comprimés
Provided is a method for forming a deposition film, with which a deposition film having improved uniformity of a film thickness can be formed. The method for forming a deposition film is a method for forming a deposition film on a substrate (21) on which a pattern (22) is formed, and the method includes a deposition step of placing the substrate (21) on an electrode and applying bias power to the electrode to form a deposition film (40) on the substrate (21) using plasma obtained by plasma-processing a deposition gas. A material constituting the pattern (22) is at least one of a carbon-containing material, a silicon-containing material, and a metal-containing material. In addition, the deposition gas contains unsaturated halon. The unsaturated halon is an unsaturated compound which has a fluorine atom, a bromine atom, and a carbon atom in a molecule and has 2 or 3 carbon atoms. Further, a power density of the bias power applied to the electrode is more than 0 W/cm2 and 0.5 W/cm2 or less.
A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, and the additive includes (A) a 4-pyrone-based compound represented by General Formula (1) below, and (B1) a compound of which a 1 mM aqueous solution has a pH of 3.7 or more or (B2) a cyclic compound having at least one functional group selected from the group consisting of a carboxy group, a carboxylate group, an amino group, and a hydroxy group. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, and the additive includes a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.
A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, and the additive includes (A) a 4-pyrone-based compound represented by General Formula (1) below, and (B1) a compound of which a 1 mM aqueous solution has a pH of 3.7 or more or (B2) a cyclic compound having at least one functional group selected from the group consisting of a carboxy group, a carboxylate group, an amino group, and a hydroxy group. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, and the additive includes a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.
A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, and the additive includes (A) a 4-pyrone-based compound represented by General Formula (1) below, and (B1) a compound of which a 1 mM aqueous solution has a pH of 3.7 or more or (B2) a cyclic compound having at least one functional group selected from the group consisting of a carboxy group, a carboxylate group, an amino group, and a hydroxy group. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, and the additive includes a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.
[in the formula, X11, X12, and X13 are each independently a hydrogen atom or a monovalent substituent.]
A method for manufacturing a magnetic recording medium includes successively laminating at least a magnetic layer, a protective film, and a lubricant layer on a nonmagnetic substrate, and performing a heat treatment a surface of the lubricant layer by irradiation of light from an LED light source.
C09D 125/18 - Homopolymères ou copolymères de monomères aromatiques contenant des éléments autres que le carbone et l'hydrogène
H01G 9/00 - Condensateurs électrolytiques, redresseurs électrolytiques, détecteurs électrolytiques, dispositifs de commutation électrolytiques, dispositifs électrolytiques photosensibles ou sensibles à la températureProcédés pour leur fabrication
A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.
A photosensitive resin composition for a permanent resist according to the present disclosure contains an acid-modified vinyl group-containing resin (A), a thermosetting resin (B), a photopolymerization initiator (C), a photopolymerizable compound (D), and an elastomer (H), the photopolymerizable compound includes a photopolymerizable compound having an isocyanuric skeleton, and the elastomer includes a liquid elastomer or a granular elastomer having an average particle size of less than 4 μm.
The present embodiment relates to a semiconductor package including an organic substrate having a circuit, a semiconductor chip that is mounted on a part of one surface of the organic substrate, and is electrically connected to the circuit, and a metal plate that is adhered to the one surface of the organic substrate in at least a part of a region where the semiconductor chip is not mounted, and is not electrically connected to the circuit, a metal constituting the metal plate having an average thermal expansion coefficient at 30 to 260° C. of 3 to 15 ppm/° C.
A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×1014 cm−3 at any position in the plane of the epitaxial layer.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/52 - Commande ou régulation du processus de dépôt
C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/167 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée caractérisés en outre par le matériau de dopage
A lithium ion conductive solid electrolyte that is a compound represented by a compositional formula Li2-xTi1-xM1xO3, wherein the M1 is at least one metallic element selected from the group consisting of elements of niobium and tantalum, and 0.05≤x≤0.15.
H01B 1/08 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques oxydes
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
Provided is an electrode binder for a biofuel cell, which can provide an electrode slurry that has a low environmental load, a conductive material of which being good in dispersibility, and is suitable for screen printing and allows production of a biofuel cell that exhibits good output characteristics. The electrode binder for a biofuel cell according to the present invention includes a polymer (A) having a first structural unit derived from a nonionic ethylenically unsaturated monomer (a1), a second structural unit derived from an anionic ethylenically unsaturated monomer (a2), and a third structural unit derived from a crosslinking agent (a3), and the crosslinking agent (a3) has two or more ethylenically unsaturated bonds in one molecule.
A resin composition including a maleimide resin (A) obtained by reacting a tetracarboxylic acid dianhydride (a1), a diamine (a2), and maleic anhydride (a3), in which the tetracarboxylic acid dianhydride (a1) contains at least one of a compound represented by the following Formula (1), a compound represented by the following Formula (2), and a compound represented by the following Formula (6), and the diamine (a2) contains a dimer diamine and a second diamine other than a dimer diamine:
A resin composition including a maleimide resin (A) obtained by reacting a tetracarboxylic acid dianhydride (a1), a diamine (a2), and maleic anhydride (a3), in which the tetracarboxylic acid dianhydride (a1) contains at least one of a compound represented by the following Formula (1), a compound represented by the following Formula (2), and a compound represented by the following Formula (6), and the diamine (a2) contains a dimer diamine and a second diamine other than a dimer diamine:
C08G 73/12 - Précurseurs de polyimides non saturés
C08F 283/04 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères prévus par la sous-classe sur des polycarbonamides, des polyesteramides ou des polyimides
A method for manufacturing a laminate includes forming a first organic insulating layer including a first thermosetting resin and first inorganic oxide particles on a first support substrate, polishing a first surface of the first organic insulating layer to planarize the first surface, and bonding the polished first surface to a second surface of a second organic insulating layer including a second thermosetting resin and second inorganic oxide particles.
A method for producing a resin composition is disclosed. The method for producing a resin composition includes: obtaining a polyimide resin by reacting a tetracarboxylic dianhydride with a polyamine in an organic solvent; and obtaining a resin composition containing a polymaleimide resin and the organic solvent by reacting the polyimide resin with maleic anhydride. The polyamine contains dimer diamine. The organic solvent contains 1,2,4-trimethylbenzene.
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C08F 299/02 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires à partir de polycondensats non saturés
33.
CMP POLISHING SOLUTION, STORAGE SOLUTION, AND POLISHING METHOD
A CMP polishing solution containing abrasive grains, an iron ion supplying agent, an organic acid, an oxidizing agent, and an aqueous liquid medium, in which the abrasive grains include silica particles having sulfo groups and silica particles not having sulfo groups.
Provided are a catalyst and a method that enable the production of an olefin-based polymer, which has a polar group and is usable for various applications, at high catalytic activity. A metal complex shown in general formula (C1) (in the formula, M represents a palladium atom or a nickel atom, X represents a phosphorus atom (P), R5-R9 are as set forth in the claims, L represents an electron donating ligand, and q is 0, ½, 1, or 2) is used as a catalyst for polymerization of an olefin having a polar group.
C08F 4/80 - MétauxHydrures métalliquesComposés organiques de métalLeur utilisation comme précurseurs de catalyseurs choisis parmi les métaux non prévus dans le groupe choisis parmi les métaux du groupe du fer ou les métaux du groupe du platine
Disclosed is a method for producing a joined body obtained by joining a base material A, a solid joining agent containing an amorphous thermoplastic resin, which is at least one of a thermoplastic epoxy resin and a phenoxy resin, as a main component, and a base material B in this order, in which at least the base material A is a thermoplastic resin base material, an epoxy equivalent of the amorphous thermoplastic resin is 1,600 g/eq. or more or the amorphous thermoplastic resin does not contain an epoxy group, and a heat of fusion of the amorphous thermoplastic resin is 15 J/g or less, and the method has a step of superposing and a joining step (1), or has a joining step (2-1) and a joining step (2-2).
B29C 65/48 - Assemblage d'éléments préformésAppareils à cet effet en utilisant des adhésifs
B29C 65/14 - Assemblage d'éléments préformésAppareils à cet effet par chauffage, avec ou sans pressage par énergie ondulatoire ou rayonnement corpusculaire
B32B 15/092 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique comprenant des résines époxy
B32B 27/06 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 27/28 - Produits stratifiés composés essentiellement de résine synthétique comprenant des copolymères de résines synthétiques non complètement couverts par les sous-groupes suivants
B32B 27/38 - Produits stratifiés composés essentiellement de résine synthétique comprenant des résines époxy
A slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, the second particles contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and a ratio of the lowest valence among the plurality of valences of the metal is 0.10 or more in X-ray photoelectron spectroscopy.
A method for producing solder particles, which includes: a preparation step wherein a base material that has a plurality of recesses and solder fine particles are prepared; an accommodation step wherein at least some of the solder fine particles are accommodated in the recesses; and a fusing step wherein the solder fine particles accommodated in the recesses are fused, thereby forming solder particles within the recesses. With respect to this method for producing solder particles, the average particle diameter of the solder particles is from 1 μm to 30 μm; and the C.V. value of the solder particles is 20% or less.
B23K 35/02 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par des propriétés mécaniques, p. ex. par la forme
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
B23K 35/32 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à plus de 1550°C
38.
SiC SINGLE CRYSTAL BOULE, MANUFACTURING METHOD OF SiC SINGLE CRYSTAL BOULE, AND MANUFACTURING METHOD OF SiC SUBSTRATE
A SiC single crystal boule according to the present embodiment includes a portion in a cross section orthogonal to a crystal growth direction in which a line segment passing through a center of a largest inscribed circle contained within the cross section and connecting a first outer circumferential point and a second outer circumferential point of the cross section has a length of 211 mm or more and 221 mm or less.
A method of evaluating a resin material, the method comprising: preparing a test piece comprising a resin material and a metal film disposed at a surface of the resin material; subjecting the test piece to pretreatment (1) and pretreatment (2), in order, wherein pretreatment (1) is maintaining the test piece in an environment of from 60° C. to 100° C. and a relative humidity of from 60% to 100% for at least 15 hours, and pretreatment (2) is heating the test piece under a condition with a maximum temperature of at least 200° C.; and conducting a peeling test for the metal film of the test piece after the pretreatments.
A method is provided for producing a joined body, including: an injection molding step of injecting a thermoplastic resin composition into a cavity of a mold in a state where a solid joining agent containing a thermoplastic resin having an epoxy equivalent of 1,600 or more or containing no epoxy group is placed on a wall surface in the cavity to obtain a first base material in which a resin molded body made of the thermoplastic resin composition and the solid joining agent are integrated; and a joining step of melting and then solidifying the solid joining agent in a state where the solid joining agent of the first base material is in contact with a second base material to obtain a joined body between the first base material and the second base material.
B29C 45/14 - Moulage par injection, c.-à-d. en forçant un volume déterminé de matière à mouler par une buse d'injection dans un moule ferméAppareils à cet effet en incorporant des parties ou des couches préformées, p. ex. moulage par injection autour d'inserts ou sur des objets à recouvrir
With respect to an information processing device that supports creation of an Ising model for causing an annealing-type optimization machine to solve an optimum solution search problem, the information processing device includes a transforming unit configured to binarize an explanatory variable included in a training data set created using a trained machine learning model; a training unit configured to train an Ising model by performing machine learning with a relationship between the binarized explanatory variable and a predicted value of the training data set; and an output unit configured to output the trained Ising model.
Provided are a method for producing a polymer dispersion for a solid electrolytic capacitor which enables production of a solid electrolytic capacitor having a large capacitance and a low equivalent series resistance, and a method for producing a solid electrolytic capacitor using the polymer dispersion. The method for producing a polymer dispersion for a solid electrolytic capacitor according to the present invention includes a step (1) of polymerizing a monomer as a constitutional unit of a conjugated conductive polymer in a liquid containing at least one of a seed particle with protective colloid formed of a polyanion and a polyanion to obtain a polymer-containing liquid; a step (2) of performing a first dispersion treatment on the polymer-containing liquid to obtain a dispersion (a); and a step (3) of adding an electric conductivity improver to the dispersion (a), and performing a second dispersion treatment to obtain a dispersion (b).
H01G 9/00 - Condensateurs électrolytiques, redresseurs électrolytiques, détecteurs électrolytiques, dispositifs de commutation électrolytiques, dispositifs électrolytiques photosensibles ou sensibles à la températureProcédés pour leur fabrication
Provided is a method for manufacturing a bumper reinforcement in which bonding process time is short and open time is long. A method for manufacturing a bumper reinforcement of one embodiment includes: a pre-bonding step of preparing a layered body containing, in the following order, a metal member, which is a body section, a solid adhesive mainly comprising an amorphous thermoplastic resin that is at least one of a thermoplastic epoxy resin and a phenoxy resin, and a resin member, which is a resin reinforcement; and a bonding step of heating and pressurizing the layered body to melt the solid adhesive, and bonding the metal member and the resin member. Either the epoxy equivalent of the amorphous thermoplastic resin is 1,600 or more or the amorphous thermoplastic resin does not contain epoxy groups, and the heat of fusion of the amorphous thermoplastic resin is 15 J/g or less.
B29L 31/30 - Véhicules, p. ex. bateaux ou avions, ou éléments de leur carrosserie
B60R 19/03 - Pare-chocs, c.-à-d. éléments pour recevoir ou absorber les chocs pour protéger les véhicules ou dévier les chocs provenant d'autres véhicules ou objets caractérisés par le matériau, p. ex. matériau composite
B60R 19/04 - Pare-chocs, c.-à-d. éléments pour recevoir ou absorber les chocs pour protéger les véhicules ou dévier les chocs provenant d'autres véhicules ou objets formés de plusieurs sections
45.
SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER
A SiC epitaxial wafer (1) of the present invention is a SiC epitaxial wafer having a SiC epitaxial film (E) on a main surface of a SiC single crystal substrate (W), in which an orientation flat or a notch is provided thereon, a height (h) of an epi crown (Ec), which is present on an outer circumferential portion of the SiC epitaxial film, with respect to a level surface of the SiC epitaxial film (E) at a position on a wafer diameter intersecting a longitudinal center of the orientation flat or a groove bottom of the notch is 30% or less of a thickness (Et) of the SiC epitaxial film (E) at a wafer center (C), and the SiC epitaxial film (E) does not have triangular defects in a region less than 1 mm from an edge in a direction toward the wafer center.
C30B 25/14 - Moyens d'introduction et d'évacuation des gazModification du courant des gaz réactifs
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
Provided is a method that is for producing an alcohol from an olefin compound with an improved selectivity and that enables a catalyst to be easily reused. This method for producing an alcohol comprises: reacting an olefin compound, carbon monoxide, and hydrogen molecules, using a group-9 transition metal complex as a catalyst, in an organic solvent containing at least 30 mol % of an amine compound having at least two nitrogen atoms that form a tertiary amine.
C07C 29/36 - Préparation de composés comportant des groupes hydroxyle ou O-métal liés à un atome de carbone ne faisant pas partie d'un cycle aromatique à six chaînons par des réactions augmentant le nombre d'atomes de carbone avec formation de groupes hydroxyle, ces groupes pouvant être produits par l'intermédiaire de dérivés de groupes hydroxyle, p. ex. du dérivé O-métal
Occurrence of waviness abnormality is predicted. A waviness prediction device includes a data input part configured to receive an input of waviness data obtained by measuring waviness of a polishing target surface that is polished by rotating a polishing pad with a planetary gear mechanism; a feature obtainment part configured to obtain a feature including both a number of processed polishing targets in the polishing pad, and a torque of a sun gear; and a waviness prediction part configured to predict the waviness by inputting the feature obtained by the feature obtainment part to a prediction model that learns a relationship between the feature and the waviness data.
A model generation device generates an estimation model configured by a Gaussian mixture model showing the distribution of data sets with defects in data values related to a sample. The model generation device includes: an acquisition unit that acquires a plurality of data sets; a generation unit that generates an estimation model by calculating a likelihood expressed by the Gaussian mixture model for the plurality of data sets and obtaining parameters that maximize the likelihood by machine learning processing and that calculates a likelihood for each of the plurality of data sets by calculating a likelihood for each sample according to a pattern of the data value defect and calculating a sum of the likelihoods for each of the samples; and an output unit that outputs the estimation model having the obtained parameters.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
49.
POLYMER EMULSION, STORAGE METHOD THEREFOR, TWO-PACK TYPE HEAT-CURABLE RESIN COMPOSITION USING SAID POLYMER EMULSION, CURED RESIN FILM, AND COATING FILM
The purpose of the present invention is to provide a polymer emulsion having excellent preservation stability, a thermosetting resin composition containing the polymer emulsion, and having excellent curability at low temperature, a coating material containing the thermosetting resin composition, a resin cured film obtained by curing the thermosetting resin composition, a coating film including the resin cured film, and a method for storing the polymer emulsion. The present invention includes an invention of a polymer emulsion (B) including a polymer (A) containing a constituent unit (A-1), and water, wherein a content ratio of the constituent unit (A-1) when a total content of all constituent units of the polymer (A) is defined as 100 mol % is 0.5 mol % or more and 40 mol % or less.
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08L 33/12 - Homopolymères ou copolymères du méthacrylate de méthyle
C09D 133/12 - Homopolymères ou copolymères du méthacrylate de méthyle
A method of producing a semiconductor device including: providing a temporary fixing laminate having a supporting substrate; machining a semiconductor member that is temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of a rear surface of the supporting substrate. A plurality of the irradiation target regions set at the rear surface are sequentially irradiated with light, and each of the irradiation target regions includes a part of the rear surface. The irradiation target regions adjacent to each other partially overlap with each other as reviewed from a direction perpendicular to the rear surface, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.
A design support device supports design of a first compound and design of a second compound containing the first compound, and the design support device includes a first design condition proposing unit configured to propose a candidate for design condition information for the first compound that satisfies required property information for the first compound that is input; and a first property predicting unit configured to perform property prediction of the second compound based on design condition information for the second compound that is input.
A method for producing a structure, the structure including a support member and a cured product of a thermosetting resin composition disposed at one face of the support member, the method including: disposing a thermosetting resin composition at both faces of the support member; curing the thermosetting resin composition; and removing a cured product of the thermosetting resin composition disposed at another face of the support member.
A method for evaluating a SiC substrate according to the present embodiment includes: an image acquisition step of acquiring an X-ray topographic image of an entire first surface of a SiC substrate; and an estimation step of estimating a basal plane dislocation density of the SiC substrate from the X-ray topographic image of the entire first surface of the SiC substrate based on learning results of deep learning.
A SiC ingot according to the present embodiment has been identified a value of a basal plane dislocation density obtained by directly measuring at least one of a Si-face, a C-face, and a side-face.
The cooling structure has a refrigerant inlet, a refrigerant outlet, and a flow path made of resin and connecting the refrigerant inlet and the refrigerant outlet, in which a portion of a face configuring the flow path is open.
Aluminum alloy ingot containing Cu: 0.3 to 1.0 mass %, Mg: 0.6 to 1.2 mass %, Si: 0.9 to 1.4 mass %, Mn: 0.4 to 0.6 mass %, Fe: 0.1 to 0.7 mass %, Cr: 0.09 to 0.25 mass %, and Ti: 0.012 to 0.035 mass %, and in an X-ray diffraction pattern measured using Cu-Kα rays, a peak height of a diffraction peak at a diffraction angle 2θ of 41.6 to 42.0° is a value smaller than 6 times a standard deviation of a background X-ray intensity in a range of a full width at half maximum of the diffraction peak, and in a heat-treated product after heating at 450° C. for 1 hour, a peak height of the diffraction peak at a diffraction angle 2θ of 41.6 to 42.0° is 15 times or more a standard deviation of the background X-ray intensity in the range of a full width at half maximum of the diffraction peak.
C22F 1/047 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid de l'aluminium ou de ses alliages d'alliages avec le magnésium comme second constituant majeur
B22D 11/00 - Coulée continue des métaux, c.-à-d. en longueur indéfinie
B22D 11/045 - Coulée continue des métaux, c.-à-d. en longueur indéfinie dans des moules sans fond pour la coulée horizontale
C22C 21/02 - Alliages à base d'aluminium avec le silicium comme second constituant majeur
57.
SILICON-CONTAINING OXIDE-COATED ALUMINUM NITRIDE PARTICLE AND METHOD OF MANUFACTURING THE SAME
A silicon-containing oxide-coated aluminum nitride particle including an aluminum nitride particle and a silicon-containing oxide coating covering the surface of the aluminum nitride particle. The content of carbon atoms is less than 1000 ppm by mass, and an Si/Al atom ratio of the surface as measured by AES analysis is 0.29 or more and 5.0 or less. In another aspect, the coverage of the silicon-containing oxide coating covering the surface of the aluminum nitride particle as measured by LEIS analysis is 15% or more and 100% or less.
A wiring-forming member 1 includes an adhesive layer 10 containing conductive particles 12, and a metal layer 20 disposed on the adhesive layer 10. The adhesive layer 10 includes a first adhesive layer 15 containing the conductive particles 12 and an adhesive component, and a second adhesive layer 16 containing an adhesive component.
A fluorine-containing ether compound represented by the following formula: R1-[B]-[A]-O—CH2—R2—CH2—O-[C]-[D]-R3 (R1 is an organic group having 7 to 18 carbon atoms, including a group in which a carbonyl carbon atom or nitrogen atom in an amide bond and an aromatic hydrocarbon are directly bonded; R2 is a perfluoropolyether chain; R3 is Formula (2); X1 is a hydrogen atom or an organic group having 7 to 18 carbon atoms, including a group in which a carbonyl carbon atom or nitrogen atom in an amide bond and an aromatic hydrocarbon are directly bonded; [A] is Formula (3-1); [B] is Formula (3-2); [C] is Formula (4-1); [D] is Formula (4-2); and the number of hydroxyl groups in Formula (1) is 3 or more).
A fluorine-containing ether compound represented by the following formula: R1-[B]-[A]-O—CH2—R2—CH2—O-[C]-[D]-R3 (R1 is an organic group having 7 to 18 carbon atoms, including a group in which a carbonyl carbon atom or nitrogen atom in an amide bond and an aromatic hydrocarbon are directly bonded; R2 is a perfluoropolyether chain; R3 is Formula (2); X1 is a hydrogen atom or an organic group having 7 to 18 carbon atoms, including a group in which a carbonyl carbon atom or nitrogen atom in an amide bond and an aromatic hydrocarbon are directly bonded; [A] is Formula (3-1); [B] is Formula (3-2); [C] is Formula (4-1); [D] is Formula (4-2); and the number of hydroxyl groups in Formula (1) is 3 or more).
C08G 65/00 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule
H01F 10/18 - Pellicules magnétiques minces, p. ex. de structure à un domaine caractérisées par les couches magnétiques caractérisées par la composition les pellicules étant des composés
60.
PREDICTION APPARATUS, TRAINING APPARATUS, PREDICTION METHOD, TRAINING METHOD, PREDICTION PROGRAM, AND TRAINING PROGRAM
A prediction apparatus includes a trained model trained by using training data in which a material composition of a material to be learned is associated with a phase fraction of the material to be learned at each temperature within a predetermined temperature range, the trained model being configured to predict a phase fraction at an i+1-th temperature by using a phase fraction predicted by the trained model for one or more temperatures up to an i-th temperature within the predetermined temperature range (where i is an integer of 1 or more). The prediction apparatus is configured to input a material composition of a material to be predicted into the trained model, thereby predicting a phase fraction of the material to be predicted at each temperature within the predetermined temperature range.
The SiC substrate has a warpage factor F of 300 μm or less, which is obtained from the thickness, the diameter, and a stress at a first outer circumferential end 10 mm inward from an outer circumferential end in the [11-20] direction from a center thereof.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A method for manufacturing a semiconductor device includes a tape expanding step of stretching an expansion tape while heating to expand an interval between a plurality of semiconductor chips fixed onto the expansion tape at an expansion rate in a range A per one expansion, a transferring step of transferring the plurality of semiconductor chips to an expansion tape, and repeating the tape expanding step and the transferring step. In a stress-strain curve according to a tensile test of the expansion tape, an elongation range B in which an absolute value of a difference between a MD tensile stress and a TD tensile stress is 2.8 MPa or less overlaps with a part of the range A. The tape expanding step includes expanding the interval by using an elongation value selected from an overlapping range between the range A and the range B as the expansion rate per one expansion.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Provided is a method for producing hexafluoro-1,3-butadiene capable of producing hexafluoro-1,3-butadiene at a high yield. The method for producing hexafluoro-1,3-butadiene includes a reaction step of performing dechlorination in which chlorine atoms are eliminated from 1,2,3,4-tetrachlorohexafluorobutane in a reaction solution containing the 1,2,3,4-tetrachlorohexafluorobutane, zinc, at least one of an antioxidant and a polymerization inhibitor, and an organic solvent to yield hexafluoro-1,3-butadiene.
A metal paste for bonding contains metal particles, a dispersion medium, and a sintering accelerator, the metal particles contain copper particles, the sintering accelerator includes a coordinating compound having electron back donation properties, and the coordinating compound is at least one type selected from the group consisting of a nitrogen-containing aromatic heterocyclic compound, an acetylene derivative, an ethylene derivative, an organic arsenic compound, and a cyanide.
B23K 35/02 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par des propriétés mécaniques, p. ex. par la forme
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 7/06 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p. ex. pour former des outils à embouts rapportés
B23K 35/30 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 1550 C
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A joint structure including a second panel serving as a member to be joined made from resin, a third adhesive disposed on a join face of the second panel, a bracket serving as a joining member that includes a base made from resin joined to the second panel by the third adhesive and a protruding portion that is contiguous to the base and that protrudes outside from an adhesion region between the base and the second panel, a first coupling portion that is provided at the adhesion region and that couples the bracket and second panel, a second coupling portion that is separated from the first coupling portion at the adhesion region and that couples the bracket and the second panel, and one or more rotation stop portion that is separated from an imaginary line connecting the first coupling portion and the second coupling portion, and that stops the bracket from rotating about an axis of the imaginary line.
A slurry containing abrasive grains and a liquid medium, in which the abrasive grains contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and when the slurry is brought into contact with a surface to be polished to bring the abrasive grains into contact with the surface to be polished, the slurry yields 0.13 or more in X-ray photoelectron spectroscopy as a ratio of the lowest valence among the plurality of valences of the metal.
A compound safety prediction device includes an input unit for inputting the structural formula of at least one molecule, a safety prediction unit for predicting a safety evaluation of the molecule and computing a confidence score level of the prediction, a similar molecule data searching unit for acquiring the safety evaluation data of a similar molecule similar to the molecule, and an output unit for outputting the result of prediction of the safety evaluation of the molecule, the confidence score level of the prediction, and the safety evaluation data of the similar molecule.
G16C 20/30 - Prévision des propriétés des composés, des compositions ou des mélanges chimiques
G16C 20/40 - Recherche de structures chimiques ou de données physicochimiques
68.
LITHIUM ION CONDUCTIVE SOLID ELECTROLYTE MATERIAL, LITHIUM ION CONDUCTIVE SOLID ELECTROLYTE, METHOD FOR PRODUCING SAID LITHIUM ION CONDUCTIVE SOLID ELECTROLYTE MATERIAL, METHOD FOR PRODUCING SAID LITHIUM ION CONDUCTIVE SOLID ELECTROLYTE, AND ALL-SOLID-STATE BATTERY
A lithium ion conductive solid electrolyte material, a lithium ion conductive solid electrolyte, a method for producing the same, or an all-solid-state battery; and the method for producing a lithium ion conductive solid electrolyte material having a crystal structure based on LiTa2PO8 and having at least Li, Ta, P, O, and Zr as constituent elements. The method includes a primary pulverization step of pulverizing a raw material to obtain a primary pulverized product, a firing step of firing the primary pulverized product to obtain a primary fired product, and a secondary pulverization step of pulverizing the primary fired product by using a ball mill to obtain a lithium ion conductive solid electrolyte material.
C01B 35/14 - Composés contenant du bore et de l'azote, du phosphore, du soufre, du sélénium ou du tellure
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
69.
INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING PROGRAM
An information processing system according to an example includes at least one processor. The at least one processor acquires a reactant list indicating a plurality of reactants, acquires a reaction formula expressing a reactant having a reactive functional group by a general formula, selects at least one combination of the reactants compatible with the reaction formula as at least one reactant combination from the reactant list, and identifies, for each of the at least one reactant combination, a product to be obtained from the reactant combination by the reaction formula.
An aluminum alloy forging formed of an aluminum alloy containing Cu: 0.15% to 1.0%, Mg: 0.6% to 1.35%, Si: 0.95% to 1.45%, Mn: 0.4% to 0.6%, Fe: 0.2% to 0.7%, Cr: 0.05% to 0.35%, Ti: 0.012% to 0.035%, B: 0.0001% to 0.03%, Zn: 0.25% or less, Zr: 0.05% or less (all % given by mass), and a remainder consisting of Al and inevitable impurities, in which a crystal grain diameter where a maximum principal stress is applied is 20 to 40 μm. The aluminum alloy forging has a structure in which an average shortest distance from a precipitate having a major axis of 0.1 μm or more to a crystal grain boundary in a cross-sectional structure with a visual field area of 8,000 μm2 is in a range of 0.1 μm to 2.0 μm, and a fatigue life at a load stress of 150 MPa is 6×106.
An epoxy resin, which is configured to form a phase-separated structure in a cured product, the cured product being obtained by curing the epoxy resin by increasing a temperature of the epoxy resin from an ambient temperature to a curing temperature at a rate of not greater than 20° C./minute.
To provide a method capable of producing a fluorinated polyether with a number-average molecular weight as theoretically calculated from a number-average molecular weight of a raw material polyether compound in high yield. The method for producing a fluorinated polyether, characterized in including a step (1) of introducing the raw material compound represented by Formula (X) having a Mw/Mn representing a molecular weight distribution of 1.30 or smaller, an inert gas, a fluorine gas, and a solvent into a reactor to fluorinate the raw material compound.
To provide a method capable of producing a fluorinated polyether with a number-average molecular weight as theoretically calculated from a number-average molecular weight of a raw material polyether compound in high yield. The method for producing a fluorinated polyether, characterized in including a step (1) of introducing the raw material compound represented by Formula (X) having a Mw/Mn representing a molecular weight distribution of 1.30 or smaller, an inert gas, a fluorine gas, and a solvent into a reactor to fluorinate the raw material compound.
R4—O—(R1—O)x—R5 (X)
To provide a method capable of producing a fluorinated polyether with a number-average molecular weight as theoretically calculated from a number-average molecular weight of a raw material polyether compound in high yield. The method for producing a fluorinated polyether, characterized in including a step (1) of introducing the raw material compound represented by Formula (X) having a Mw/Mn representing a molecular weight distribution of 1.30 or smaller, an inert gas, a fluorine gas, and a solvent into a reactor to fluorinate the raw material compound.
R4—O—(R1—O)x—R5 (X)
wherein R1 represents a divalent hydrocarbon group having 2 to 5 carbon atoms; R4 and R5 each independently represent a protecting group for a hydroxyl group; x represents an average degree of polymerization and is a real number of 2.7 to 15.
C07C 67/307 - Préparation d'esters d'acides carboxyliques par modification de la partie acide de l'ester sans introduction d'un groupe ester par introduction d'atomes d'halogènePréparation d'esters d'acides carboxyliques par modification de la partie acide de l'ester sans introduction d'un groupe ester par substitution d'atomes d'halogène par des atomes d'autres halogènes
73.
METHOD FOR PRODUCING (E)-1,1,1,4,4,4-HEXAFLUORO-2-BUTENE
Provided is a method capable of producing (E)-1,1,1,4,4,4-hexafluoro-2-butene at a high yield. The method for producing (E)-1,1,1,4,4,4-hexafluoro-2-butene includes vaporizing 1,2,3,4-tetrachlorobutane and reacting the 1,2,3,4-tetrachlorobutane vaporized in the vaporizing, with chlorine gas and hydrogen fluoride gas in the gas phase in the presence of a solid catalyst to yield (E)-1,1,1,4,4,4-hexafluoro-2-butene.
C07C 17/21 - Préparation d'hydrocarbures halogénés par remplacement par des halogènes d'atomes d'halogène par d'autres atomes d'halogène avec augmentation simultanée du nombre d'atomes d'halogène
An 8 inch n-type SiC single crystal substrate of an embodiment has a diameter in the range of 195 to 205 mm, a thickness in the range of 300 μm to 650 μm, thicknesses of work-affected layers on both the front and back sides are 0.1 nm or less, and the dopant concentration is 2×1018/cm3 or more and 6×1019/cm3 or less at least five arbitrarily selected points in the plane within 5% of the thickness of the substrate in the depth direction from the main surface of the substrate.
To provide a method capable of producing a fluorinated polyether with a number-average molecular weight as theoretically calculated from a number-average molecular weight of a raw material polyether compound in high yield.
To provide a method capable of producing a fluorinated polyether with a number-average molecular weight as theoretically calculated from a number-average molecular weight of a raw material polyether compound in high yield.
A method for producing a fluorinated polyether, characterized by including: a step (1) of performing an operation of adjusting a molecular weight distribution of a polymeric compound having a structural unit (R1—O) to obtain the raw material compound represented by a formula (X); and after the step (1), a step (2) of introducing the raw material compound represented by the formula (X), an inert gas, a fluorine gas, and a solvent into a reactor to fluorinate the raw material compound, R4—O—(R1—O)x—R5 (X) wherein R1 represents a divalent hydrocarbon group having 2 to 5 carbon atoms; R4 and R5 each independently represent a protecting group for a hydroxyl group; x represents an average degree of polymerization and is a real number of 2.7 to 15.
A photosensitive resin composition containing a binder polymer, a photopolymerizable compound, a photopolymerization initiator, and a tetrazole compound, in which a content of a monomer unit of a styrene compound in the binder polymer is more than 30% by mass, and a content of the tetrazole compound is 0.01 parts by mass or more with respect to 100 parts by mass of the total of the binder polymer and the photopolymerizable compound.
G03F 7/033 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p. ex. composés éthyléniques avec des liants les liants étant des polymères obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone, p. ex. polymères vinyliques
A polishing liquid containing abrasive grains containing cerium oxide and an ammonium salt, in which a pH is 9.00 or more. A polishing method including polishing a member to be polished containing copper by using the above-described polishing liquid. A method for manufacturing a component, including obtaining a component by using a polished member polished by the above-described polishing method. A method for manufacturing a semiconductor component, including obtaining a semiconductor component by using a polished member polished by the above-described polishing method.
Provided is a photosensitive resin composition containing: (A) a photopolymerizable compound having an ethylenically unsaturated group and an acidic substituent; (B) a (meth)acrylate compound having two or more (meth)acryloyl groups; (C) a compound having two or more ethylenically unsaturated groups other than the (meth)acryloyl groups; (D) a photopolymerization initiator, and (E) an organic peroxide.
An aspect of the present disclosure relates to a polymer including a structural unit represented by the following Formula (I) and a structural unit having a carboxy group. In Formula (I), R1 represents a hydrogen atom or a methyl group; M represents an alkylene group or an alkylene oxide chain; and R2 represents an alkyl group or an aryl group.
An aspect of the present disclosure relates to a polymer including a structural unit represented by the following Formula (I) and a structural unit having a carboxy group. In Formula (I), R1 represents a hydrogen atom or a methyl group; M represents an alkylene group or an alkylene oxide chain; and R2 represents an alkyl group or an aryl group.
G03F 7/031 - Composés organiques non couverts par le groupe
G03F 7/105 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des substances, p. ex. des indicateurs, pour obtenir des images visibles
G03F 7/34 - Dépouillement selon l'image par transfert sélectif, p. ex. par arrachement
A vehicular back door including a first panel that is made from resin, a second panel that is made from resin and that includes a recess that is open toward the first panel, a first adhesive that joins together the first panel and the second panel, and a bracket that is a separate member from each of the first panel and the second panel, and that is disposed inside the recess.
B60J 5/10 - Portes disposées à l'arrière du véhicule
B32B 3/08 - Caractérisés par des caractéristiques de forme en des endroits déterminés, p. ex. au voisinage des bords caractérisés par des éléments ajoutés à des endroits déterminés
B32B 3/30 - Produits stratifiés comprenant une couche ayant des discontinuités ou des rugosités externes ou internes, ou une couche de forme non planeProduits stratifiés comprenant une couche ayant des particularités au niveau de sa forme caractérisés par une couche continue dont le périmètre de la section droite a une allure particulièreProduits stratifiés comprenant une couche ayant des discontinuités ou des rugosités externes ou internes, ou une couche de forme non planeProduits stratifiés comprenant une couche ayant des particularités au niveau de sa forme caractérisés par une couche comportant des cavités ou des vides internes caractérisés par une couche comportant des retraits ou des saillies, p. ex. des gorges, des nervures
B32B 5/02 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par les caractéristiques de structure d'une couche comprenant des fibres ou des filaments
B32B 5/26 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par la présence de plusieurs couches qui comportent des fibres, filaments, grains ou poudre, ou qui sont sous forme de mousse ou essentiellement poreuses une des couches étant fibreuse ou filamenteuse un autre couche également étant fibreuse ou filamenteuse
81.
WIRING STRUCTURE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR PACKAGE
A method for manufacturing a wiring structure includes forming a wiring on an insulating resin layer, which includes forming a modified region including pores in a surface layer of the insulating resin layer by treating a surface of the insulating resin layer with a treatment method including surface modification; forming a seed layer on the surface of the insulating resin layer by sputtering; and forming the wiring on the seed layer by electrolytic copper plating. The method may include, in this order, forming a surface treatment agent layer that covers a surface of the wiring by treating the surface of the wiring with a surface treatment agent for improving adhesion; and forming a modified region including pores in a surface layer of a first layer of the insulating resin layer by treating the surface of the first layer of the insulating resin layer with a treatment method including surface modification.
H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/498 - Connexions électriques sur des substrats isolants
H05K 1/09 - Emploi de matériaux pour réaliser le parcours métallique
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, TEMPORARY-FIXING MATERIAL, AND APPLICATION FOR MANUFACTURING SEMICONDUCTOR DEVICE OF TEMPORARY-FIXING MATERIAL
A method for manufacturing a semiconductor device, comprising: arranging a semiconductor chip on a temporary fixing material layer of a carrier substrate; forming a sealing layer sealing the semiconductor chip, thereby forming a sealing structure on the carrier substrate, the sealing structure having a connection surface in contact with the temporary fixing material layer, the semiconductor chip being exposed to the connection surface, a step formed by the semiconductor chip and the sealing layer on the connection surface being 5.0 μm or less; separating the carrier substrate from the sealing structure; and providing a redistribution layer on the connection surface.
An information processing device for assisting creation of an Ising model receives an objective function that formulates characteristics of a composite material according to a formulation and a condition of constraint on the formulation, and creates the Ising model to solve an optimal solution of the formulation that satisfies a constraint condition expression and optimizes the characteristics. The condition of constraint on the formulation includes a condition related to a mix number of substances included in a substance group and to be mixed in the composite material, for each substance group composing the composite material, and a condition related to an amount of substance to be mixed in the composite material, for each substance included in the substance group.
G06N 7/01 - Modèles graphiques probabilistes, p. ex. réseaux probabilistes
84.
PREDICTION MODEL GENERATING METHOD, PREDICTION METHOD, PREDICTION MODEL GENERATING DEVICE, PREDICTION DEVICE, PREDICTION MODEL GENERATING PROGRAM, AND PREDICTION PROGRAM
Prediction accuracy of trained prediction models is improved by setting an appropriate weight using a trained clustering model and classified clusters. A method of generating a model for predicting a material characteristic includes a step of acquiring a training dataset, a step of generating a trained clustering model using the training dataset and a clustering model, and classifying the training dataset into N clusters, a step of calculating a distance between centroids of the clusters, a step of calculating a weight between the clusters using the distance between the centroids of the clusters and a parameter representing a feature of the training dataset, and a step of generating, for the N clusters, respective trained prediction models {Mi} 1≤i≤N using the clusters and the weight.
FILM-LIKE ADHESIVE FOR SEMICONDUCTORS, METHOD FOR PRODUCING FILM-LIKE ADHESIVE FOR SEMICONDUCTORS, ADHESIVE TAPE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
A film-shaped adhesive having a first adhesive region and a second adhesive region along a thickness direction, in which the first adhesive region has photocurability and thermosetting properties, and the second adhesive region has thermosetting properties but does not have photocurability.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
C09J 7/30 - Adhésifs sous forme de films ou de pellicules caractérisés par la composition de l’adhésif
C09J 11/06 - Additifs non macromoléculaires organiques
C09J 163/10 - Résines époxy modifiées par des composés non saturés
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
86.
CHARACTERISTICS PREDICTION SYSTEM, CHARACTERISTICS PREDICTION METHOD, AND CHARACTERISTIC PREDICTION PROGRAM
An input data generation system is a system generating input data for machine learning for predicting the properties of a material based on a plurality of raw materials having a known partial structure, and includes a processor. The processor receives the input of partial structure data for specifying the known partial structure of each of the plurality of raw materials and blending ratio data indicating a ratio of the blending of each of the plurality of raw materials, generates partial structure input data indicating the known partial structure, on the basis of the partial structure data for each of the plurality of raw materials, generates synthetic input data by reflecting the blending ratio data relevant to the plurality of raw materials on the partial structure input data and compiling the partial structure input data, and inputs the synthetic input data to a machine learning model.
There is provided a fluorine-containing ether compound represented by following formula: R1—R2—CH2—R3[—CH2—R4—CH2R3′]n—CH2—R5—R6 (n is 1 or 2; R3 and R3′ are a perfluoropolyether chain; R4 is a divalent linking group having one polar group; R2 and R5 are a divalent linking group having one or more polar groups; R2 has an oxygen atom at an end that is bonded to R1; R5 has an oxygen atom at an end that is bonded to R6; R1 and R6 in end group bonded to an oxygen atom at an end of R2 or R5; and R1 and R6 are an organic group having 1 to 50 carbon atoms, and at least one of them is a group in which a carbonyl carbon atom or nitrogen atom constituting an amide bond is bonded to a carbon atom of an organic group having 1 to 8 carbon atoms).
One aspect of the present invention is a method for manufacturing an electronic component, the method including: a first step of applying a metal paste containing metal particles onto a polymer compact in a prescribed pattern to form a metal paste layer; a second step of sintering the metal particles to form metal wiring; a third step of applying a solder paste containing solder particles and a resin component onto the metal wiring to form a solder paste layer; a fourth step of disposing an electronic element on the solder paste layer; and a fifth step of heating the solder paste layer so as to form a solder layer bonding the metal wiring and the electronic element, and so as to form a resin layer covering at least a portion of the solder layer.
B22F 7/08 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p. ex. pour former des outils à embouts rapportés avec une ou plusieurs parties non faites à partir de poudre
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H05K 1/09 - Emploi de matériaux pour réaliser le parcours métallique
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 3/12 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de l'impression pour appliquer le matériau conducteur
An input data generation system is an input data generation system generating input data for machine learning for predicting the properties of a material based on a raw material having a known structure, and includes at least one processor, in which at least one processor acquires partial structure data indicating a partial structure from a database, receives at least the input of raw material structure data for specifying the structure of the raw material and blending ratio data indicating a ratio of the blending of the raw material, generates partial structure input data indicating the partial structure existing in the structure of the raw material, on the basis of the partial structure data and the raw material structure data, generates input data by reflecting the blending ratio data on the partial structure input data of the raw material, and inputs the input data to a machine learning model.
A radio wave transmitting member, including, in order, an outer layer, an intermediate layer and an inner layer, the intermediate layer including an elastic body, and the elastic body being in a constantly compressed state.
One embodiment of the present invention relates to a solid electrolyte, an all-solid-state battery, or a solid electrolyte material, and the solid electrolyte contains: a lithium ion conducting phase having at least tantalum, phosphorus, and oxygen as constituent elements; and a compound phase having at least phosphorus and oxygen as constituent elements and being free of tantalum, in which, in a scanning transmission electron microscopy-energy dispersive X-ray spectroscopy (STEM-EDX) image, the area proportion of the compound phase is 0.40% or more based on 100% in total of the area of the lithium ion conducting phase, the area of the compound phase, and the area of voids, and the solid electrolyte has at least lithium, tantalum, phosphorus, and oxygen as constituent elements.
An aluminum alloy ingot contains Cu: 0.15 mass % or more and 1.0 mass % or less, Mg: 0.6 mass % or more and 1.2 mass % or less, Si: 0.95 mass % or more and 1.35 mass % or less, Mn: 0.4 mass % or more and 0.6 mass % or less, Fe: 0.15 mass % or more and 0.70 mass % or less, Cr: 0.09 mass % or more and 0.25 mass % or less, and Ti: 0.012 mass % or more and 0.035 mass % or less, with the remainder being made up of Al and unavoidable impurities, and in the aluminum alloy ingot, a difference between a maximum value and a minimum value of secondary dendrite arm spacing in a cross section perpendicular to a casting direction of the aluminum alloy ingot is in a range of 5 μm or more and 20 μm or less.
A prediction data display device includes a processor configured to input, into a trained model obtained by performing a training process on a model with training data including information on first characteristic data indicating a deterioration degree of a first consumable in a first period as input data and information on second characteristic data indicating a deterioration degree of the first consumable in a second period after the first period as ground-truth data, information on third characteristic data indicating a deterioration degree of a second consumable in the first period to calculate information on fourth characteristic data indicating a deterioration degree of the second consumable in the second period; and display a graph of the fourth characteristic data and a graph of the second characteristic data with a display appearance determined in accordance with a similarity between the information on the first characteristic data and the third characteristic data.
G01R 31/392 - Détermination du vieillissement ou de la dégradation de la batterie, p. ex. état de santé
G01R 31/36 - Dispositions pour le test, la mesure ou la surveillance de l’état électrique d’accumulateurs ou de batteries, p. ex. de la capacité ou de l’état de charge
94.
METHOD FOR MANUFACTURING SUBSTRATE MATERIAL FOR SEMICONDUCTOR PACKAGE, PREPREG, AND APPLICATION FOR PREPREG
A method for manufacturing a substrate material for a semiconductor package having an insulating substrate includes forming an insulating substrate from a prepreg by a molding treatment including increasing a temperature of a laminated body including two or more laminated sheets of a prepreg while pressurizing the laminated body. The molding treatment includes increasing the temperature of the laminated body under a heating condition in which a melt viscosity of the prepreg increases to 1000×103 Pa·s at a rate of 55×103 Pa·s/min or greater from a time point at which a minimum melt viscosity is exhibited.
A property prediction device includes a processor; and a memory storing program instructions that cause the processor to: create a prediction model by using a training dataset of a composite material including raw materials in first and second categories to perform machine learning of a correspondence relationship between a property of the composite material, which is an objective variable, versus a mixing amount of the raw material in the first category and a weighted feature of the raw material in the second category, which are explanatory variables; and input, as explanatory variables, a mixing amount of a raw material in the first category and a weighted feature of a raw material in the second category, created based on prediction data of a composite material whose property is to be predicted, into the prediction model so as to predict the property of the composite material corresponding to the prediction data.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
96.
INFORMATION PROCESSING APPARATUS, PROGRAM, AND INPUT SUPPORT METHOD
An information processing apparatus for receiving input of information on a material composition from an operator includes a material reception unit configured to receive selection of a material, to which input of information is directed, in accordance with an operation specifying an on-screen position performed by the operator, and a material-content reception unit configured to receive selection of a content of the material, to which the input of information is directed, in accordance with an operation stopping specifying the on-screen position.
SEMICONDUCTOR DEVICE HAVING DOLMEN STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND SUPPORT PIECE FORMATION LAMINATE FILM AND MANUFACTURING METHOD THEREFOR
A semiconductor device having a dolmen structure, includes a substrate, a first chip disposed on the substrate, support pieces disposed around the first chip on the substrate, a second chip that is supported by the support pieces and that covers the first chip. Each support piece has a multi-layer structure including a first bonding adhesive piece, a second bonding adhesive piece and a metal piece interposed between the first bonding adhesive piece and the second bonding adhesive piece, in which the first bonding adhesive piece is in contact with the metal piece and with the substrate. An additional bonding adhesive piece is interposed between the second chip and at least one support piece, and contacts the second bonding adhesive piece of the support piece.
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
98.
METHOD FOR SELECTING PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERNED CURED FILM, CURED FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
The present disclosure relates to a method for selecting a photosensitive resin composition, the method including: a step of applying a photosensitive resin composition on a substrate and drying the photosensitive resin composition to form a resin film; a step of heat-treating the resin film in a nitrogen atmosphere to obtain a cured film; and a step of raising the temperature from 25° C. to 300° C. at a rate of 10° C./min in a nitrogen atmosphere and then measuring weight loss of the cured film, in which a photosensitive resin composition capable of producing the cured film having a weight loss ratio at 300° C. of 1.0% to 6.0% is selected.
G03F 7/16 - Procédés de couchageAppareillages à cet effet
G01N 5/04 - Analyse des matériaux par pesage, p. ex. pesage des fines particules séparées d'un gaz ou d'un liquide en éliminant un constituant, p. ex. par évaporation, et en pesant le reste
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
Provided is a method for producing alcohols by an olefin hydration reaction using a heteropolyacid catalyst, wherein the catalyst can be stably used on a long-term basis. The temperature difference within the catalyst layer in the olefin hydration reaction using a heteropolyacid catalyst is made less than or equal to a certain value. Specifically, in a method for producing alcohols in which a gas-phase hydration reaction is carried out using a solid acid catalyst that supports a heteropolyacid acid or salt thereof and supplying water and C2-C5 olefin to a reactor, the temperature difference within the catalyst layer in the reactor is established at less than or equal to 6° C.
C07C 29/04 - Préparation de composés comportant des groupes hydroxyle ou O-métal liés à un atome de carbone ne faisant pas partie d'un cycle aromatique à six chaînons par addition de groupes hydroxyle à des liaisons carbone-carbone non saturées, p. ex. à l'aide de H2O2 par hydratation de liaisons doubles carbone-carbone
B01J 8/06 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés avec des particules immobiles, p. ex. dans des lits fixes dans des réacteurs tubulairesProcédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés avec des particules immobiles, p. ex. dans des lits fixes les particules solides étant disposées dans des tubes
100.
ETCHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
There is provided an etching method capable of selectively etching an etching object as compared with a non-etching object. An etching method includes an etching step of bringing an etching gas containing nitrosyl fluoride into contact with a member to be etched (12) having an etching object subject to etching by the etching gas and a non-etching object not subject to etching by the etching gas, and selectively etching the etching object as compared with the non-etching object without using plasma. The etching object contains at least one of silicon and silicon germanium represented by the chemical formula Si1-xGex and the non-etching object contains at least one of germanium and silicon germanium represented by the chemical formula Si1-yGey. In both the chemical formulae, x is 0 or more and less than 1, y is more than 0 and 1 or less, and x is smaller than y.
brevets
