Abrégé

The present invention provides an apparatus for manufacturing a silicon carbide ingot, comprising: a crucible for accommodating a silicon carbide raw material; a seed crystal arranged at the upper portion of the crucible; and a temperature gradient control unit disposed between the silicon carbide raw material and the seed crystal. In addition, the present invention provides a method for manufacturing a silicon carbide ingot, comprising the steps of: preparing a crucible in which a seed crystal is arranged at the upper portion of the crucible and a silicon carbide raw material is loaded at the lower portion of the crucible; sublimating silicon carbide from the silicon carbide raw material by heating the crucible; and growing the sublimated silicon carbide from the seed crystal to a silicon carbide ingot, wherein the crucible includes a temperature gradient control unit disposed between the silicon carbide raw material and the seed crystal, and the temperature of the sublimated silicon carbide is controlled by the temperature gradient control unit.

Classes IPC  ?

• C30B 23/02 - Croissance d'une couche épitaxiale
• C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
• C30B 29/36 - Carbures

Abrégé

The present invention provides an apparatus for manufacturing a silicon carbide ingot and a method for manufacturing a silicon carbide ingot using same, wherein the apparatus comprises: a crucible main body for accommodating a silicon carbide raw material; a crucible cover disposed on an upper portion of the crucible main body; and a heat dissipation control member thermally connected to at least a part of the crucible cover. Additionally, the present invention provides a method for manufacturing a silicon carbide ingot, the method comprising the steps of: preparing a crucible body in which a hydrocarbon raw material is accommodated; covering an inlet of the crucible body with a crucible cover; sublimating silicon carbide from the raw material by heating; and growing a silicon carbide ingot from the sublimated silicon carbide, wherein the temperature of the silicon carbide ingot is controlled by the heat dissipation control member thermally connected to at least a part of the crucible cover.

Classes IPC  ?

• C30B 23/02 - Croissance d'une couche épitaxiale
• C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
• C30B 29/36 - Carbures

Abrégé

A method for manufacturing a silicon carbide (SiC) wafer is disclosed. The method for manufacturing a SiC wafer comprises the steps of: placing a SiC block in a crucible; sublimating SiC contained in the SiC block to form a SiC ingot; and processing the SiC ingot.

Classes IPC  ?

• C30B 23/02 - Croissance d'une couche épitaxiale
• C30B 29/36 - Carbures
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives

Abrégé

In a silicon carbide ingot manufacturing method, silicon carbide ingots, a silicon carbide ingot manufacturing system, and the like, of the present invention, silicon carbide ingots are provided by a method of preparing a crucible assembly, which comprises a crucible main body that has an inner space and a crucible lid for covering the crucible main body, arranging a raw material and a silicon carbide seed, and then growing silicon carbide ingots, and performing application, and the like, so that the weight of the crucible assembly is 1.5-2.7 on the basis of 1 of the weight of the raw material, and thus silicon carbide ingots having fewer defects even while having a large area are provided.

Classes IPC  ?

• C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
• C30B 29/36 - Carbures
• C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives