Disclosed is a method of manufacturing a silicon carbide wafer. The method of manufacturing a silicon carbide wafer includes a step of disposing a silicon carbide block in a crucible; a step of sublimating a silicon carbide included in the silicon carbide block to form a silicon carbide ingot; and a step of processing the silicon carbide ingot.
A silicon carbide powder including carbon; and silicon, wherein a flow index under a major principal consolidation stress of 9 kPa is 0.005 to 0.3, and a flow index under a major principal consolidation stress of 0.3 kPa is 0.01 to 0.5.
A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.
C30B 33/10 - Gravure dans des solutions ou des bains fondus
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
4.
SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME
A silicon carbide powder having silicon carbide particles including carbon and silicon, wherein a mass ratio of silicon carbide particles having a particle diameter of less than 50 μm after sonication is 10 Wt % or less.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
Disclosed are a silicon carbide powder and a method of manufacturing a silicon carbide ingot using the same. More particularly, the silicon carbide powder includes carbon and silicon and has a particle circularity of 0.4 to 0.9 measured through 2D image analysis.
In a method for manufacturing a silicon carbide ingot, a silicon carbide ingot, a system for manufacturing a silicon carbide into according to embodiments of the present invention, a crucible assembly comprising a crucible body having an inner space and a crucible cover covering the crucible body, a silicon carbide ingot is grown after disposing a raw material and a silicon carbide seed, wherein a weight of the crucible assembly is set to have a weight ratio of 1.5 to 2.7 when a weight of the raw material is regarded as 1. Thus, a silicon carbide ingot has a large area and reduced defects can be manufactured.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
8.
Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystal
A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
Disclosed are a silicon carbide wafer and a method of manufacturing the same. The silicon carbide wafer includes an upper surface and a lower surface, the upper surface includes a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface, a first peak omega angle measured at intervals of 15 mm in a first direction in the first target region is within −1° to +1° based on a peak omega angle measured at the center of the upper surface, and the first direction is a [1-100] direction and a direction passing through the center of the upper surface.
B32B 3/00 - Produits stratifiés comprenant une couche ayant des discontinuités ou des rugosités externes ou internes, ou une couche de forme non planeProduits stratifiés comprenant une couche ayant des particularités au niveau de sa forme
A silicon carbide wafer has one surface and the other surface opposite to the one surface. An average Rmax roughness of the one surface is 2.0 nm or less, and an average Ra roughness of the one surface is 0.1 nm or less. An edge region is a region in which a distance from an edge of the silicon carbide wafer toward a center is 5% to 75% of a radius of the silicon carbide wafer, and a central region is a region having a radius of 25% of the radius of the silicon carbide wafer at the center of the silicon carbide wafer. A difference between an average Rmax roughness of the edge region of the one surface and an average Rmax roughness of the central region of the one surface is 0.01 nm to 0.5 nm.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below:
A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below:
3D≤r≤37D [Equation 1]
A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below:
3D≤r≤37D [Equation 1]
where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a length of a line of intersection between the first cross-sectional plane and the third cross-sectional plane.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
13.
Manufacturing method of silicon carbide wafer, silicon carbide wafer and system for manufacturing wafer
A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.
B32B 3/00 - Produits stratifiés comprenant une couche ayant des discontinuités ou des rugosités externes ou internes, ou une couche de forme non planeProduits stratifiés comprenant une couche ayant des particularités au niveau de sa forme
B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p. ex. par des outils animés d'un mouvement alternatif
A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.
H01L 21/16 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges les dispositifs ayant des corps semi-conducteurs comprenant de l'oxyde cuivreux ou de l'iodure cuivreux
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
G01N 23/207 - Diffractométrie, p. ex. en utilisant une sonde en position centrale et un ou plusieurs détecteurs déplaçables en positions circonférentielles
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
16.
SILICON CARBIDE WAFER AND METHOD OF PREPARING THE SAME
The method of preparing a silicon carbide ingot includes: disposing a raw material and a silicon carbide seed crystal to be separated in a reactor having an internal space; adjusting a temperature, a pressure, and an atmosphere of the internal space for sublimating the raw material and growing the silicon carbide ingot on the silicon carbide seed crystal; and cooling the reactor and retrieving the silicon carbide ingot, wherein the adjusting proceeds in a first inert gas atmosphere having a flow quantity of 100 sccm to 300 sccm, the cooling proceeds in a second inert gas atmosphere having a flow quantity of 1 sccm to 250 sccm, and the reactor has a thermal conductivity of 120 W/mK or less.
C30B 33/00 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
17.
Method of cleaning wafer and wafer with reduced impurities
A method of cleaning a wafer comprises: a scrubbing operation comprising treating a target wafer to be cleaned with a brush at a rotation rate of 200 rpm or less to prepare a brush cleaned wafer; and a cleaning operation comprising cleaning the brush cleaned wafer with a cleaning solution to prepare a cleaned bare wafer, wherein the cleaning operation comprises a first cleaning operation and a second cleaning operation sequentially.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.
H01L 29/15 - Structures avec une variation de potentiel périodique ou quasi périodique, p.ex. puits quantiques multiples, superréseaux
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
G01N 23/207 - Diffractométrie, p. ex. en utilisant une sonde en position centrale et un ou plusieurs détecteurs déplaçables en positions circonférentielles
20.
Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a wafer
A wafer having relaxation moduli different by 450 GPa or less, as determined by dynamic mechanical analysis, when loaded to 1 N and 18 N with a loading rate of 0.1 N/min at a temperature of 25° C.
C30B 33/00 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée
21.
Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal
A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.
A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.
C30B 33/10 - Gravure dans des solutions ou des bains fondus
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
23.
Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material
A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.
A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.
An epitaxial wafer including a wafer having one surface and an other surface, and an epitaxial layer formed on the one surface of the wafer, wherein a roughness skewness (Rsk) of the one surface is −3 nm to 3 nm, and a roughness average (Ra) of an edge area of the one surface is different from that of a central area of the one surface by −2 nm to 2 nm when the edge area of the one surface is defined as an area between 13.3% and 32.1% of the radius of the wafer in a direction from the edge of the one surface toward the center thereof and the central area of the one surface is defined as an area at 9.4% of the radius of the wafer from the center of the one surface.
C30B 25/08 - Enceintes de réactionEmploi d'un matériau spécifié à cet effet
C30B 25/10 - Chauffage de l'enceinte de réaction ou du substrat
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
26.
Method of measuring a graphite article, apparatus for a measurement, and ingot growing system
Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.
G01R 27/26 - Mesure de l'inductance ou de la capacitanceMesure du facteur de qualité, p. ex. en utilisant la méthode par résonanceMesure de facteur de pertesMesure des constantes diélectriques
G01R 27/16 - Mesure de l'impédance d'un élément ou d'un réseau dans lequel passe un courant provenant d'une autre source, p. ex. câble, ligne de transport de l'énergie
27.
Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or more
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
28.
Method for preparing silicon carbide wafer and silicon carbide wafer
G01N 3/303 - Recherche des propriétés mécaniques des matériaux solides par application d'une contrainte mécanique en appliquant une force unique et brève engendrée uniquement par un poids en chute libre
B24B 9/06 - Machines ou dispositifs pour meuler les bords ou les biseaux des pièces ou pour enlever des bavuresAccessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière propre aux objets à meuler de matière inorganique non métallique, p. ex. de la pierre, des céramiques, de la porcelaine
B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet
C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
29.
Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom
A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.
B24B 7/22 - Machines ou dispositifs pour meuler les surfaces planes des pièces, y compris ceux pour le polissage des surfaces planes en verreAccessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière des objets non métalliques à meuler pour meuler de la matière inorganique, p. ex. de la pierre, des céramiques, de la porcelaine
B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet
B28D 5/02 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils rotatifs, p. ex. par forets
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p. ex. par des outils animés d'un mouvement alternatif
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
30.
Adhesive layer of seed crystal, method for preparing a laminate using the same, and method for preparing a wafer
where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a length of a line of intersection between the first cross-sectional plane and the third cross-sectional plane.
A method for preparing a SiC ingot includes loading a composition of a raw material comprising a carbon source and a silicon source into a reactor; placing a plurality of seed crystal on one side of the reactor spaced apart from the composition; and sublimating the composition such that the SiC ingot grows from the plurality of seed crystal. A flow factor of the composition may be 5 to 35.
C30B 25/08 - Enceintes de réactionEmploi d'un matériau spécifié à cet effet
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C30B 19/08 - Chauffage de la chambre de réaction ou du substrat
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
C30B 25/10 - Chauffage de l'enceinte de réaction ou du substrat
33.
Method for producing ingot, raw material for ingot growth, and method for preparing the raw material
50 of 80 μm or more into a reactor (loading step), controlling the internal temperature of the reactor such that adjacent particles of the raw material powder are interconnected to form a necked raw material (necking step), and sublimating components of the raw material from the necked raw material to grow an ingot (ingot growth step).
A method in which a carbonaceous protective film is formed on a rear surface of a single crystal SiC seed, the seed is placed in a reaction container without adhesion, and then single crystal SiC is grown from a SiC raw material on a front surface of the seed allows the seed to grow to a single crystal ingot having a large diameter since the absence of adhesion of the seed to a holder prevents the generation of warps or cracks attributed to a difference in thermal expansion coefficient between the seed and the holder during heating.
Apparatus for producing an ingot comprising a crucible body with a lid assembly having a movable core member and method for producing silicon carbide ingot using the apparatus
An apparatus for producing an ingot includes a crucible body having an opening and in which raw materials are accommodated, and a lid assembly located at the opening and having a portion fixed to the crucible body. The lid assembly includes a placement hole having open upper and lower ends, a frame member arranged along a periphery of the opening while surrounding a periphery of the placement hole, and a core member located in the placement hole and movable upward and downward with respect to the frame member.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
A method for preparing a seed crystal including a protective film includes preparing i) a first layer composition of a first binder resin and a first solvent and ii) a second layer composition of a second binder resin, a filler, and a second solvent, applying the first layer composition to the rear surface of a seed crystal to form a first coating layer on the rear surface of the seed crystal and drying the first coating layer to form a first layer on the rear surface of the seed crystal, and applying the second layer composition onto the first layer to form a second coating layer on the first layer, followed by heat treating to form a second layer on the first layer wherein the first layer and the second layer are sequentially disposed on the rear surface of the seed crystal, and wherein the first layer has a thickness corresponding to 30% or less of the distance from the bottom surface of the first layer to the top surface of the second layer.
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
brevets
