According to the present disclosure, a method for manufacturing a semiconductor apparatus includes 5 steps. First step is forming a semiconductor device structure. Second step is grinding a peripheral portion, partway in a thickness direction. Third step is dividing the wafer in a direction perpendicular to the thickness direction at a position closer than a depth to which the peripheral portion of the wafer is ground, and dividing a first divided wafer which does not include the semiconductor device structure from the wafer. Fourth step is grinding a peripheral portion of a divided surface of the first divided wafer. And fifth step is forming a semiconductor device structure on the divided surface of the first divided wafer, the peripheral portion of the divided surface of which is ground.
This power conversion device includes a multilevel inverter which outputs multilevel voltages by adding/subtracting voltage of a sub inverter to/from output voltage of a main inverter. The multilevel inverter can switch between PWM operation in which plural pulses are outputted in each of positive voltage output and negative voltage output in one cycle and a pulse width is controlled, and one-pulse operation in which one pulse is outputted in each of positive voltage output and negative voltage output in one cycle, and has a current-split switching mode in which current flowing between a neutral point and the sub inverter flows through a first switch group and a second switch group provided to the main inverter and connected in parallel, in a case where the main inverter outputs zero voltage which is the potential of the neutral point, in the one-pulse operation.
H02M 7/5395 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur avec commande automatique de la forme d'onde ou de la fréquence de sortie par modulation de largeur d'impulsions
H02M 1/00 - Détails d'appareils pour transformation
An embodiment of an indoor unit of an air conditioner according to the present disclosure includes: a housing having an exhaust port formed thereon; a heat exchanger housed on an inside of the housing; a blower that is housed on the inside of the housing, and that blows air to the exhaust port, and a biometric sensing device that detects biometric information regarding a living body, where the living body is located inside of a detection range thereof. A shutter that opens and closes at least a portion of the exhaust port, is provided in the exhaust port. The biometric sensing device is accommodated on the inside of the housing. The detection range of the biometric sensing device is provided outside a movable range of the shutter.
A pair of support column members, a motor support plate fixed thereto, at a support column fixing portion on each end, and that supports the fan motor. The motor support plate has a first plate that extends along a plane orthogonal with the front-rear direction, and has a motor insertion hole having the fan motor and a plurality of motor fixing portions disposed and arranged along an inside edge thereof, and a protrusion protruding to one side. The protrusion has an annular protrusion extending along the inside of said edge, and a reinforcement protrusion extending towards the support column fixing portion, from the annular protrusion. First and second imaginary lines extend in differing directions towards the support column fixing portion, from the motor fixing portion are assumed. A side surface of the reinforcement protrusion has first and second side surfaces that extend along the first and second imaginary lines.
An impeller includes a blade including, at its leading edge part, a first leading-edge-side concavity, a leading-edge-side convexity, and a second leading-edge-side concavity, which are positioned in sequence from a radially middle part to an outboard edge part. The first leading-edge-side concavity is a part where the suction side of the impeller is concave. The leading-edge-side convexity is a part where the suction side is convex. The second leading-edge-side concavity is a part where the suction side is concave. At the leading edge part of the blade, the blade has a blade height defined in a direction along the rotational axis of the impeller toward the suction side. The blade height decreases monotonically from the radially middle part toward a first leading-edge-side stationary point, and increases monotonically from the first leading-edge-side stationary point toward a second leading-edge-side inflection point.
A semiconductor device according to the present disclosure includes: a semiconductor substrate with a first main surface and a second main surface; a drift layer of a first conductivity type formed in the semiconductor substrate; a first impurity diffusion layer of a second conductivity type formed on the drift layer to be closer to the first main surface; and a buffer layer of the first conductivity type formed on the drift layer to be closer to the second main surface and higher in peak impurity concentration than the drift layer. The drift layer has a first trap, a second trap, and a third trap, whose energy level each is lower than energy at a bottom of a conduction band by 0.246 eV, 0.349 eV, and 0.470 eV. The second trap has trap density of equal to or greater than 2.0×1011 cm−3.
H01L 21/22 - Diffusion des impuretés, p. ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductricesRedistribution des impuretés, p. ex. sans introduction ou sans élimination de matériau dopant supplémentaire
H10D 12/00 - Dispositifs bipolaires contrôlés par effet de champ, p. ex. transistors bipolaires à grille isolée [IGBT]
H10D 62/10 - Formes, dimensions relatives ou dispositions des régions des corps semi-conducteursFormes des corps semi-conducteurs
H10D 62/17 - Régions semi-conductrices connectées à des électrodes ne transportant pas de courant à redresser, amplifier ou commuter, p. ex. régions de canal
H10D 62/53 - Défectuosités physiques les défectuosités étant à l'intérieur du corps semi-conducteur
H10D 64/00 - Électrodes de dispositifs ayant des barrières de potentiel
H10D 84/60 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors BJT
A management apparatus includes: a display; a controller configured to control the display; and an address list including address information of a further management apparatus different from the management apparatus. The controller is configured to: communicate with the further management apparatus based on the address list, to obtain facility device data about a facility device managed by the further management apparatus; and cause the display to display the facility device data.
H04L 41/22 - Dispositions pour la maintenance, l’administration ou la gestion des réseaux de commutation de données, p. ex. des réseaux de commutation de paquets comprenant des interfaces utilisateur graphiques spécialement adaptées [GUI]
G06F 3/038 - Dispositions de commande et d'interface à cet effet, p. ex. circuits d'attaque ou circuits de contrôle incorporés dans le dispositif
A variable gain amplifier includes a control unit to acquire set gain information related to a setting of a gain, and, on the basis of the set gain information, output a current to a first reference current transistor and a second reference current transistor in such a manner that the sum of the value of a current to the first reference current transistor and the value of a current to the second reference current transistor becomes constant, and output, to a first variable impedance circuit and a second variable impedance circuit, a voltage obtained by multiplying the absolute value of the difference between the value of a current to the first reference current transistor and the value of a current to the second reference current transistor by a coefficient.
An contactless input device includes: a three-dimensional-operation-coordinate detecting unit that detects multiple sets of three-dimensional operation coordinates in a predetermined space by sequentially detecting the three-dimensional operation coordinates, which are triaxial coordinates of an instruction input object, which is an object for inputting an instruction; a smoothing processing unit that calculates smoothed three-dimensional operation coordinates by performing smoothing by using a predetermined first number (first number≥2) of sets of three-dimensional operation coordinates included in the multiple sets of three-dimensional operation coordinates; and an aerial-reception-range passage determining unit that specifies passage coordinates, which are coordinates at which the instruction input object passes through a predetermined aerial reception range in the space, by using the smoothed three-dimensional operation coordinates.
A communication system configured to support a plurality of frame formats used for wireless communication, includes a base station, and a user apparatus configured to wirelessly communicate with the base station. Numerologies that specify subcarrier spacings are configured respectively to the plurality of the frame formats, In the plurality of the frame formats, synchronization signals and broadcast channels are mapped to resources respectively corresponding to the plurality of the frame formats.
H04W 24/10 - Planification des comptes-rendus de mesures
H04B 7/04 - Systèmes de diversitéSystèmes à plusieurs antennes, c.-à-d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées
H04B 7/0452 - Systèmes MIMO à plusieurs utilisateurs
H04B 7/06 - Systèmes de diversitéSystèmes à plusieurs antennes, c.-à-d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
H04B 17/336 - Rapport signal/interférence ou rapport porteuse/interférence
H04W 16/28 - Structures des cellules utilisant l'orientation du faisceau
H04W 74/0833 - Procédures d’accès aléatoire, p. ex. avec accès en 4 étapes
H04W 76/27 - Transitions entre états de commande de ressources radio [RRC]
H04W 92/20 - Interfaces entre des dispositifs hiérarchiquement similaires entre des points d'accès
11.
SLIP/SKID DISCRIMINATION DEVICE, BRAKE CONTROL SYSTEM, AND SLIP/SKID DISCRIMINATION METHOD
A slip-and-skid determining device includes an axle speed decider, a reference axle speed decider, and a determiner. The axle speed decider decides, for each of a plurality of axles, an axle speed changeable based on a rotational speed of a wheel. The reference axle speed decider decides, based on the axle speed and a physical quantity changeable during travel of a railway vehicle, a reference axle speed in the vehicle. The determiner determines, based on comparison between the axle speed and the reference axle speed, whether any slip or skid of the wheel occurs.
B60T 8/1761 - Régulation des freins spécialement adaptée pour la prévention du dérapage excessif des roues pendant la décélération, p. ex. ABS en fonction de la dynamique de la roue ou du frein, p. ex. du dérapage de la roue, de l'accélération de la roue ou du taux de variation de la pression du fluide de frein
B60T 8/17 - Utilisation de moyens de régulation électriques ou électroniques pour la commande du freinage
B61H 1/00 - Emploi ou aménagements des freins comportant un élément, ou des éléments, de freinage agissant sur la périphérie de la jante de la roue, sur un tambour, ou sur un organe similaire
B61L 15/00 - Indicateurs de signalisation sur le véhicule ou sur le train
An additive manufacturing path generation device that generates a manufacturing path for manufacturing a manufactured object by layering layers each formed by adding a material along the manufacturing path includes: a reference path generation unit that generates, for each of the layers, a reference path from an intersection line between a layer definition surface and a reference path surface, the layer definition surface defining a target layer, the reference path surface restraining a position of the reference path for generating the manufacturing path; and a manufacturing path generation unit that generates, for each of the layers, manufacturing path candidates a plurality of paths parallel to the reference path in the layer definition surface, and generates the manufacturing path on the basis of the generated manufacturing path candidates, and the reference path generation unit generates the reference paths based on the single reference path surface common to the layers.
A switching element control apparatus includes: a drive circuit that drives a switching element according to a drive control signal; a first reference power supply that outputs a first reference voltage; a reference voltage control unit that controls the first reference power supply according to a reference voltage setting signal to adjust the first reference voltage; and an overcurrent detection circuit that outputs a first cutoff signal when an on-voltage of the switching element is equal to or higher than the first reference voltage. The drive circuit performs a hard cutoff of the switching element according to the first cutoff signal.
H02H 3/08 - Circuits de protection de sécurité pour déconnexion automatique due directement à un changement indésirable des conditions électriques normales de travail avec ou sans reconnexion sensibles à une surcharge
H02H 1/00 - Détails de circuits de protection de sécurité
A connector device includes: a housing in which a connector is provided; and a circuit board which transmits information from an electronic device fixed inside the housing. The connector has a seal packing for waterproofing, a connection terminal to be connected to an external circuit, a connection terminal to be connected to the circuit board, and a position setting determination portion to determine a set position relative to the housing. The housing has a fit-in hole into which an end of the connector is fitted, and a positioning portion to determine a placement position of the connector on the housing. The connector is fixed by being fitted into the fit-in hole of the housing with the seal packing interposed therebetween, and a position of the connector relative to the housing is set by the position setting determination portion of the connector and the positioning portion of the housing.
The network searcher collects functional information indicating functions of devices connected to a home network. The service manager identifies, based on the functional information collected by the network searcher and a service list associating services and functions necessary for the services, an available service that is available by combining the functions of the devices. A display displays the available service identified by the service manager.
A semiconductor light-receiving device according to the present disclosure includes: a semiconductor substrate; a multiplication layer formed above the semiconductor substrate; the multiplication layer composed of a digital alloy structure including a first semiconductor layer having a thickness of N times (1≤N≤20) a thickness of a monoatomic layer and a second semiconductor layer having a thickness of M times (1≤M≤20) the thickness of the monoatomic layer with a smaller bandgap energy than the first semiconductor layer in which the first semiconductor layer and the second semiconductor layer are alternately stacked a plurality of times therein; a light absorption layer formed above the multiplication layer; and an electric field relaxation layer formed between the multiplication layer and the light absorption layer; and a strain relaxation layer formed between the multiplication layer and the electric field relaxation layer.
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
H10F 71/00 - Fabrication ou traitement des dispositifs couverts par la présente sous-classe
H10F 77/124 - Matériaux actifs comportant uniquement des matériaux du groupe III-V, p. ex. GaAs
17.
CONTROL APPARATUS FOR AC ROTATING MACHINE, AND ELECTRIC POWER STEERING APPARATUS
A control device for an AC rotating machine includes: an inverter; an electric current detector; a first axis voltage command value calculator configured to calculate a voltage command value of a first axis between two rotational axes; and a second axis voltage command value calculator configured to calculate a voltage command value of a second axis between the two rotational axes. The first axis voltage command value calculator includes a gain changer configured to change a set value of a gain based on a detected electric current value of the first axis or a first deviation, performs integral calculation using an integral input calculated based on the gain and a second deviation, and calculates the voltage command value of the first axis based on a result of the integral calculation.
H02P 21/22 - Commande du courant, p. ex. en utilisant une boucle de commande
B62D 5/04 - Direction assistée ou à relais de puissance électrique, p. ex. au moyen d'un servomoteur relié au boîtier de direction ou faisant partie de celui-ci
H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p. ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions
18.
TRAINING DEVICE, TRAINING SYSTEM, MEDIUM, AND INFORMATION PROCESSING METHOD FOR TRAINING DEVICE
A training device includes: a training image acquiring unit that acquires a training image; a feature extracting unit that calculates a shared feature space feature of the training image; an existing feature acquiring unit that acquires a pre-stored trained model and an existing feature corresponding to the pre-stored trained model; a feature comparing unit that calculates a similarity between the shared feature space feature and the existing feature as an index; a model selecting unit that selects, as a base model, one of the trained models suitable for a purpose of training, on the basis of the index; a model training unit that performs retraining for the base model; a model evaluating unit that evaluates inference performance of the retrained base model; and a trained model outputting unit that outputs the retrained base model.
G06V 10/774 - Génération d'ensembles de motifs de formationTraitement des caractéristiques d’images ou de vidéos dans les espaces de caractéristiquesDispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant l’intégration et la réduction de données, p. ex. analyse en composantes principales [PCA] ou analyse en composantes indépendantes [ ICA] ou cartes auto-organisatrices [SOM]Séparation aveugle de source méthodes de Bootstrap, p. ex. "bagging” ou “boosting”
G06V 10/74 - Appariement de motifs d’image ou de vidéoMesures de proximité dans les espaces de caractéristiques
G06V 10/776 - ValidationÉvaluation des performances
A remote that refers to a remote controller includes a lithium-ion battery; an infrared signal transmission unit and a resistor that are connected in parallel with the lithium-ion battery, with the resistor being a first resistor connected in series with the infrared signal transmission unit; a micro as a microcomputer that controls transmission of an infrared signal from the infrared signal transmission unit and is connected in parallel with the lithium-ion battery; and a plurality of capacitors that are connected in parallel with the micro and include at least two ceramic capacitors.
A semiconductor device relating technology disclosed herein includes: a substrate; three P input terminals provided on the substrate; three N input terminals provided on the substrate; and an output terminal provided on the substrate. The P input terminals, the N input terminals, and the output terminal are arranged in a straight line in that order in a longitudinal direction of the substrate.
H02M 1/00 - Détails d'appareils pour transformation
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
A method for transmitting binary data using an M-ASK constellation divided into M/2 sets of two symbols is disclosed. Each set of index i is associated with a probability pi of transmitting the first symbol of the set. First, m−1 bits are obtained from a binary source where m=log2M. A binary source is then selected in a plurality of binary sources responsive to said m−1 bits, each binary source of index i being associated with a probability of outputting a bit zero equal to pi. A symbol of the M-ASK constellation is obtained that is associated with the binary word formed by the m−1 bits and the bit obtained from the selected source. The symbol is finally transmitted to a receiver over a communication channel.
A semiconductor device includes a drift layer, a p-type base layer, an n-type source layer, and a gate electrode. The base layer is formed on a part of the surface layer of the drift layer. The source layer is formed on a part of the surface layer of the base layer. The gate electrode is provided in a plurality of trenches, each penetrating the source layer and the base layer, via a gate insulating film. The source layer formed between the plurality of trenches is shallower and has a lower impurity concentration as being farther from the sidewall of each of the plurality of trenches.
A method for controlling congestion of a private train network, which comprises a plurality of road side units and each connected to an application server, wherein each of said plurality of road side units is adapted to establish sidelink communications, comprising:
aggregating congestion control information from a subset of said a plurality of road side units and railway application information by the application server;
predicting congestion status of each of the subset of said a plurality of road side units by the application server based on the aggregated congestion control information and the railway application information;
calculating and providing assistance information to the subset of said a plurality of road side units by the application server based on the predicted congestion status; and
performing Decentralized Congestion Control by the subset of said a plurality of road side units based on the assistance information.
H04W 28/02 - Gestion du trafic, p. ex. régulation de flux ou d'encombrement
H04W 4/44 - Services spécialement adaptés à des environnements, à des situations ou à des fins spécifiques pour les véhicules, p. ex. communication véhicule-piétons pour la communication entre véhicules et infrastructures, p. ex. véhicule à nuage ou véhicule à domicile
A communication system is configured to communicate using at least one subframe, slots included in the subframe, and symbols included in each of the slots. The communication system includes a terminal configured to transmit a physical uplink shared channel (PUSCH) being mapped in units of symbols by a slot in time domain, and a base station configured to receive the physical uplink shared channel transmitted from the terminal.
A semiconductor device according to the present disclosure includes a semiconductor module and a base plate on which the semiconductor module is mounted. The semiconductor module includes a linear protrusion that is provided so as not to be point-symmetric with respect to a center of the semiconductor module on at least one side, and the base plate includes a recess that is provided so as to correspond to the protrusion.
H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p. ex. marques de repérage, schémas de test
H01L 23/13 - Supports, p. ex. substrats isolants non amovibles caractérisés par leur forme
H01L 23/367 - Refroidissement facilité par la forme du dispositif
27.
AUTOMATIC-DRIVING ASSISTING APPARATUS, AUTOMATIC-DRIVING ASSISTING SYSTEM, MONITORING APPARATUS, AND AUTOMATIC-DRIVING ASSISTING METHOD FOR MOBILE BODY
An automatic-driving assisting apparatus comprises a working-information obtainer that obtains a target position and a command for working, an obstacle state obtainer that obtains an obstacle state hindering moving to a target position and working, an obstacle state determiner that determines a level of an obstacle state, and an assist requester that makes an assist request, when a level is either a second level at which an automatic driving is continued under monitoring by a remote-monitoring person, a third level at which driving of a mobile body is performed through remote driving, or a fourth level at which dispatch of a dispatch worker for performing manual operation is requested.
The present disclosure relates to a semiconductor apparatus and a method for producing the same and has as its object to provide a semiconductor apparatus and a method for producing the same capable of achieving reduction in semiconductor apparatus costs and enhancement in ease of assembly by modifying an outermost surface of a front electrode by laser irradiation. The semiconductor apparatus of the present disclosure includes a front electrode solder-joined portion of the present disclosure, solder, a resin sealing material, and a semiconductor device which is mounted underneath the front electrode solder-joined portion. The front electrode solder-joined portion has a first laser-modified portion whose outermost surface is oxidized and roughened and a first solder-joined region which is joined to the solder, and the laser-modified portion is covered with the resin sealing material.
A power conversion device includes a first electronic component group including a plurality of electronic components and a second electronic component group including a plurality of electronic components each having a shorter maintenance cycle than each of the plurality of electronic components included in the first electronic component group. The first electronic component group and the second electronic component group are accommodated in a housing. At least one of the plurality of electronic components included in the second electronic component group is located adjacent to an opening in the housing.
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
B60R 16/03 - Circuits électriques ou circuits de fluides spécialement adaptés aux véhicules et non prévus ailleursAgencement des éléments des circuits électriques ou des circuits de fluides spécialement adapté aux véhicules et non prévu ailleurs électriques pour l'alimentation des sous-systèmes du véhicule en énergie électrique
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H02M 1/44 - Circuits ou dispositions pour corriger les interférences électromagnétiques dans les convertisseurs ou les onduleurs
30.
SYSTEM COMPRISING ¿S TYPE ANALOG/DIGITAL CONVERTER CAPABLE OF REDUCING QUANTIZATION ERROR
In an analog/digital converter, a first integration circuit temporally integrates a sum of an analog input signal and a first feedback signal and includes an active element. A second integration circuit temporally integrates a sum of a result of integration by the first integration circuit and the first feedback signal and does not include an active element. When a first output voltage representing a result of integration by the second integration circuit is higher than a threshold voltage, a first signal generation circuit generates 1 as a first digital signal, and when the first output voltage is lower than the threshold voltage, the first signal generation circuit generates 0 as the first digital signal. The first signal generation circuit outputs a signal obtained by inverting 1 and 0 of the first digital signal as the first feedback signal.
A server includes an influenced parameter collector to, when a setting parameter of a first device that is any one of all devices connected to a network built in a building is changed, collect, from each of devices that measure an influenced parameter among all the devices, values of the measured influenced parameter, the influenced parameter being a parameter that is influenced by change of the setting parameter of the first device, a data analyzer to analyze the collected values of the influenced parameter and detect a second device considered as having a correlation with the first device about a change trend of the values of the influenced parameter, and a coordination suggester to make a suggestion to a user about coordination between the first device and the second device when the second device is detected and coordinated operation between the first device and the second device is achievable.
H04L 12/28 - Réseaux de données à commutation caractérisés par la configuration des liaisons, p. ex. réseaux locaux [LAN Local Area Networks] ou réseaux étendus [WAN Wide Area Networks]
32.
CONTROL DEVICE FOR AC ROTATING MACHINE AND ELECTRIC POWER STEERING DEVICE
A control device of an AC rotating machine includes an inverter, a current detector, a first axis voltage command value calculator, and a second axis voltage command value calculator. The first axis voltage command value calculator performs an integral calculation using a first deviation that is a deviation between a current command value on the first axis and a detected current value of the rotating machine current on the first axis, and a second deviation that is a deviation between a current command value on the second axis and a detected current value of the rotating machine current on the second axis, and calculates the voltage command value of the first axis on the basis of the result of the integral calculation.
B62D 5/04 - Direction assistée ou à relais de puissance électrique, p. ex. au moyen d'un servomoteur relié au boîtier de direction ou faisant partie de celui-ci
An optical module includes a semiconductor laser, a first optical receiver receiving a laser beam from the semiconductor laser, an optical filter receiving the laser beam, and a second optical receiver receiving the laser beam via the optical filter, and a temperature adjuster adjusting a temperature in the semiconductor laser and a temperature in the optical monitor, and perform control to increase a temperature to be given to the semiconductor laser and the optical monitor when a wavelength monitor value Iλ/Ip being a ratio between an optical power monitor value Ip obtained by an output from the first optical receiver and a wavelength monitor value Iλ obtained by an output from the second optical receiver is larger than a wavelength set value, and change the temperature to be given to the semiconductor laser and the optical monitor when the wavelength monitor value Iλ/Ip deviates from the wavelength set value.
H01S 5/02212 - SupportsBoîtiers caractérisés par la forme des boîtiers du type CAN, p. ex. boîtiers TO-CAN avec émission le long ou parallèlement à l’axe de symétrie
Refrigerant is sealed in a refrigeration circuit. Refrigerant contains a first component and a second component. The first component consists of 1,1,2-trifluoroethylene. The second component consists of at least one selected from the group consisting of hydrocarbon having a carbon number not smaller than 1 and not larger than 5 and fluorinated hydrocarbon having a carbon number not smaller than 1 and not larger than 5. A content C1 based on a mass of the first component in refrigerant is not lower than 50 mass %. A percentage (C2/C1)×100 of a content C2 based on a mass of the second component to the content C1 based on the mass of the first component in refrigerant is not lower than 15% and lower than 50%. The compressor is filled with compressor oil. Compressor oil is incompatible with the second component.
C09K 5/04 - Substances qui subissent un changement d'état physique lors de leur utilisation le changement d'état se faisant par passage de l'état liquide à l'état vapeur ou vice versa
35.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The object is to provide a technology capable of enhancing the reliability of a semiconductor device. A semiconductor device includes: an insulating film along an upper surface of a semiconductor substrate; a first surface electrode selectively provided on the insulating film; and a passivation film covering the insulating film and the first surface electrode. The passivation film includes a cover portion covering the first surface electrode, the cover portion having a tapered shape with at least one of a first structure or a second structure such that the cover portion becomes wider as the cover portion is closer to the semiconductor substrate in a cross-sectional view.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/51 - Matériaux isolants associés à ces électrodes
36.
DESIGN ASSISTANCE DEVICE AND DESIGN ASSISTANCE METHOD
A design assistance method includes: acquiring design candidate data including design parameters as electric motor design candidates, and acquiring a first evaluation value of each piece of design candidate data; selecting top at least one piece of design candidate data having the first evaluation value relatively high as first design candidate data, and generating second design candidate data including the design parameters from the first design candidate data; calculating a second evaluation value of the first design candidate data from the design parameters included in the first design candidate data, and calculating the second evaluation value of the second design candidate data from the design parameters included in the second design candidate data; and selecting design candidate data to be used as design data of the electric motor from among the first design candidate data and the second design candidate data from the second evaluation value.
There is provided an electric-power conversion apparatus that can suppress bending of a substrate at a time when vibration occurs in the substrate.
There is provided an electric-power conversion apparatus that can suppress bending of a substrate at a time when vibration occurs in the substrate.
The electric-power conversion apparatus includes
a semiconductor module having a main body portion held to a case and two or more control terminals pulled out from the main body portion,
a substrate on which respective connection portions to which the two or more control terminals are fixed in substantially linear alignment are arranged in such a way as to be substantially parallel to the alignment direction and in such a way as to face each other, and
a transformer that is mounted at a position, on the substrate, avoiding a virtual center line, the respective distances from which to the facing connection portions are equal to each other, and whose gravity center is apart from a first mounting surface of the substrate in the normal direction.
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
B60L 15/00 - Procédés, circuits ou dispositifs pour commander la propulsion des véhicules à traction électrique, p. ex. commande de la vitesse des moteurs de traction en vue de réaliser des performances désiréesAdaptation sur les véhicules à traction électrique de l'installation de commande à distance à partir d'un endroit fixe, de différents endroits du véhicule ou de différents véhicules d'un même train
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
A gas-insulated switch includes: a breaker that cuts off a current; a plurality of general switches including a switching operation unit that opens and closes with rotation of a driven pulley; a breaker manipulator that causes the breaker to perform a switching operation; a plurality of the general switch manipulators including a driving pulley that is rotationally driven by a motor; a wire that transmits rotational force of the driving pulley; and a housing that houses the breaker manipulator and the general switch manipulator. Regarding the plurality of the general switch manipulators, the two general switch manipulators, arranged in a horizontal direction and set as a set, are disposed above the breaker manipulator in the housing, and the wire is put around the driving pulley from a direction different from a direction in which another general switch manipulator in the same set is disposed.
A substrate for foreign material adhesion inspection according to the disclosure includes a first conductor layer; and an insulating layer provided on the first conductor layer, the insulating layer being thinner than a foreign material to be detected.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
An electric power steering device (1, 1A, 1B) includes a motor (2), a heatsink (32) in which a bearing (33) configured to rotatably support a rotary shaft (21) of the motor is provided, and a circuit board (31), on which an inverter circuit (4, 4A, 4B) configured to drive the motor, disposed on a surface of the heatsink opposite to the motor, a heat generating element (8, 8A, 8B, 9, 9A, 9B) that constitutes the inverter circuit being disposed in a projection region (42) of the circuit board on which an outer shape of the heatsink is projected when seen in an axial direction of the rotary shaft, and the inverter circuit being configured to be driven by a first voltage of 20 V or more.
H02K 9/22 - Dispositions de refroidissement ou de ventilation par un matériau solide conducteur de la chaleur s'encastrant dans, ou mis en contact avec, le stator ou le rotor, p. ex. des ponts de chaleur
B62D 5/04 - Direction assistée ou à relais de puissance électrique, p. ex. au moyen d'un servomoteur relié au boîtier de direction ou faisant partie de celui-ci
H02K 11/33 - Circuits d’entraînement, p. ex. circuits électroniques de puissance
41.
SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME, AND POWER CONVERSION APPARATUS
A semiconductor apparatus includes a semiconductor device, a lower wire member, and an upper wire member. The semiconductor device includes a semiconductor device body having a main surface, and a metal layer. The lower wire member includes an end surface and an end surface. In a plan view of the main surface, the end surface and the end surface are located inside a periphery of the semiconductor device. The upper wire member is stacked on the lower wire member. In the plan view of the main surface, a portion of the upper wire member is located outside the periphery of the semiconductor device. The upper wire member is joined to the metal layer with the lower wire member being interposed therebetween.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
42.
ANOMALY DIAGNOSIS DEVICE, ANOMALY DIAGNOSIS METHOD, AND STORAGE MEDIUM
An anomaly diagnosis device includes a signal processing device. The signal processing device includes a signal processing unit, a data storage unit, and a determination unit. The signal processing unit performs STFT on waveform data of an input signal, and calculates feature quantities. The data storage unit stores feature quantity data based on data of a known normal waveform. The determination unit compares first feature quantity data consisting of multiple ones of the feature quantities calculated by the signal processing unit with second feature quantity data, which is the feature quantity data stored in the data storage unit, and determines acceptability of the waveform data of the input signal. The feature quantities are each a quantity representing the degree of non-uniformity in temporal change of spectral intensity of a specific frequency band included in waveform data.
A gate driving device according to the present disclosure includes a gate driver circuit, a first capacitor provided outside, and a first diode. The gate driver circuit includes first and second transistors that operate complementarily, are connected in series between a first node at a first voltage and a second node at a second voltage lower than the first voltage, and have a connection node serving as an output node of the gate driving device; a first charge transistor and a first negative-bias transistor that are connected in series between the first node and a third node at a third voltage lower than the first voltage and higher than the second voltage and have a connection node connected to one electrode of the first capacitor; and a logic circuit that controls each transistor.
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
An optical measurement device includes: a wavelength sweeping light source that outputs swept light having a wavelength continuously changing with time; an irradiation optical system that emits measurement output light toward a measurement object, receives reflected light from the measurement object, and outputs the reflected light as measurement reflected light; a circulating light path that includes a loop portion and outputs circulating reference light for each circulation, in which reference output light caused by the swept light circulates through the loop portion N (an integer equal to or more than 0) times; a measurement signal acquisition unit that combines the measurement reflected light from the irradiation optical system and the circulating reference light from the circulating light path, outputs an accurate measurement signal, and rough measurement signals; and a signal processor unit that identifies the number of circulations in the circulating light path of the circulating reference light.
G01S 17/32 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées
There are included a sensor data acquiring unit to acquire a plurality of pieces of time-series sensor data collected by a plurality of sensors provided in a plurality of facility components an anomaly detecting unit to detect a plurality of anomaly detection sensors in which an anomaly has occurred on the basis of a plurality of the pieces of sensor data, an anomaly detection order estimating unit to estimate an anomaly detection order in which occurrence of the anomaly is detected, an anomaly propagation path tracking unit to estimate an anomaly propagation order in which the anomaly has propagated on the basis of anomaly detection sensor information and an estimated structure indicating a dependence relationship between the facility components, and an anomaly factor estimating unit to estimate a factor of the anomaly on the basis of the anomaly detection order and the anomaly propagation order.
An electromagnetic wave detection device is one to detect an electromagnetic wave from an electromagnetic wave generation source in a second space partitioned by a partition plate to attenuate propagation of the electromagnetic wave from a first space in which the electromagnetic wave generation source is disposed, the electromagnetic wave detection device including an electromagnetic wave observation unit including: a metal wire having a penetrating portion to penetrate a through hole formed in the partition plate while being separated from a peripheral wall of the through hole; a protruding portion to protrude from the penetrating portion to the first space and receive the electromagnetic wave from the electromagnetic wave generation source; and an extending portion extending from the penetrating portion to the second space, in which one end portion located on the second space side is connected to a ground point located on the second space side.
A dummy bar is used to align a laser diode bar during deposition of an insulating film on a front end face (32) and a rear end face (34) of a laser diode bar (30), the dummy bar including a body part (12) having a plate shape, and including a pair of side surfaces (14), an upper surface (16), and a lower surface (18), the body part having a longitudinal length equal to a longitudinal length of the laser diode bar (30), the pair of side surfaces (14) being orthogonal to a longitudinal direction and opposite each other, the upper surface (16) and the lower surface (18) being orthogonal to the pair of side surfaces, parallel to a thickness direction of the plate shape, and opposite each other and a handle part (20) provided at a position separated from the lower surface (18) on each of the pair of side surfaces (14).
B05C 1/02 - Appareillages dans lesquels un liquide ou autre matériau fluide est appliqué à la surface de l'ouvrage par contact avec un élément portant le liquide ou autre matériau fluide, p. ex. un élément poreux imprégné du liquide à appliquer sous forme de revêtement pour appliquer un liquide ou autre matériau fluide à des objets individuels
A communication system includes a base station device, and a plurality of communication terminal devices configured to perform radio communication with the base station device. The plurality of communication terminal devices include a restricted terminal device having a restricted operation, the base station device is configured to notify, via System Information (SI), at least one communication terminal device located within a communicable range of the base station device of restricted operation information that is information on the restricted operation of the restricted terminal device. The at least one communication terminal device notified of the restricted operation information judges whether or not the at least one communication terminal device is the restricted terminal device based on information stored in a subscriber identity module (SIM) of the at least one communication terminal device.
A communication apparatus includes: a linear equalization unit for a reception signal; a tap coefficient adjustment unit that adjusts, based on a step size, a tap coefficient; and a step size learning unit. The step size learning unit includes: a plurality of neural network layers that each perform computation of an updated tap coefficient based on an initial tap coefficient or an updated tap coefficient output from a previous stage, the reception signal, and a reference signal, and each hold an internal parameter; a learning processing unit that performs learning using an error function as a mean square error between a tap coefficient based on the reception signal and the reference signal and an updated tap coefficient from the neural network layer at a last stage, and updates the internal parameters; and an internal parameter collection unit that updates the step size based on the internal parameters.
An occupant monitoring device includes processing circuitry configured to: acquire a captured image in which an inside of a vehicle is captured by an imaging device provided in a movable component in the vehicle; perform sensing that is at least one of state determination of an occupant or personal authentication of the occupant by image processing of the captured image; estimate whether or not there is a change in a position of the imaging device; perform calibration for the image processing; and not perform the sensing and perform the calibration when the-processing circuitry estimates that there is a change in the position of the imaging device.
G06T 7/80 - Analyse des images capturées pour déterminer les paramètres de caméra intrinsèques ou extrinsèques, c.-à-d. étalonnage de caméra
G06V 20/59 - Contexte ou environnement de l’image à l’intérieur d’un véhicule, p. ex. concernant l’occupation des sièges, l’état du conducteur ou les conditions de l’éclairage intérieur
G06V 40/10 - Corps d’êtres humains ou d’animaux, p. ex. occupants de véhicules automobiles ou piétonsParties du corps, p. ex. mains
A treatment method of a power semiconductor module comprising at least one semiconductor element including a Metal-Oxide-Semiconductor element and/or a Metal-Insulator-Semiconductor element, said method comprising:
a. acquiring a first value Vsoh,0 corresponding, to an initial state of health of a gate oxide of the module;
b. acquiring a second value Vsoh,X corresponding, to a current state of health of a gate oxide of the module;
c. deducing
an ON-state gate voltage VCC or an OFF-state gate voltage VEE, and
a delay time of the turn-on tON or a delay time of the turn-off tOFF
in function of said acquired first value Vsoh,0 and said second value Vsoh,X;
d. generating at least one control signal configured to apply the deduced gate voltage VCC or VEE to the module during the deduced delay time tON or tOFF.
A semiconductor device includes: a power module having a plurality of semiconductor elements; and a cooler having a cooling surface to which the power module is thermally connected via a joining member having a solder material. The plurality of semiconductor elements are located at such positions as not to overlap with one another as seen in a direction perpendicular to the cooling surface, the cooling surface has a recessed portion, and the recessed portion is located at such a position as to overlap with the joining member provided between the cooling surface and the power module and as not to overlap with any of the plurality of semiconductor elements, as seen in the direction perpendicular to the cooling surface.
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
This disclosure has an object of reducing the total losses of an inverter including a Si switching element and a SIC switching element that are connected in parallel. An inverter includes: a SiC MOSFET module; a Si IGBT module connected in parallel with the SiC MOSFET module; a SiC MOSFET module control circuit controlling the SiC MOSFET module; and a Si IGBT module control circuit controlling the Si IGBT module. The SiC MOSFET module control circuit terminates driving of the SiC MOSFET module when an element temperature of the SiC MOSFET module is higher than a first threshold. The Si IGBT module control circuit terminates driving of the Si IGBT module when an element temperature of the Si IGBT module is higher than a second threshold.
H02M 1/00 - Détails d'appareils pour transformation
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
H02M 7/537 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
An air-conditioning apparatus includes a refrigerant circuit having a compressor, a heat-source-side heat exchanger, a refrigerant flow switching device, a load-side heat exchanger, and a load-side expansion device. The air-conditioning apparatus includes a bypass pipe, a first opening and closing device provided in the bypass pipe, and a controller. The compressor, the heat-source-side heat exchanger, the refrigerant flow switching device, the bypass pipe, and the first opening and closing device are mounted in an outdoor unit. In defrosting the heat-source-side heat exchanger, the controller causes a flow passage of the refrigerant flow switching device to be a flow passage through which the refrigerant discharged from the compressor flows into the load-side heat exchanger, changes the first opening and closing device to an open state, changes the load-side expansion device to a closed state, and causes the refrigerant to flow into the heat-source-side heat exchanger from the bypass pipe.
F24F 11/84 - Systèmes de commande caractérisés par leurs grandeurs de sortieDétails de construction de tels systèmes pour la commande de la température de l’air fourni en commandant l’apport en fluides échangeurs de chaleur aux échangeurs de chaleur au moyen de valves
An elevator control device according to the present disclosure includes an acquisition unit, a judgment unit, and a control unit. The acquisition unit acquires an on-car weight that is a weight of a passenger or passengers inside a car and an on-hall weight that is a weight of a passenger or passengers in a hall. The judgment unit performs first judgment of judging whether or not the passenger or passengers in the hole can get in the car based on the on-car weight and the on-hall weight acquired by the acquisition unit. The control unit controls an elevator device according to judgment of the judgment unit.
Provided are an electromagnetic wave detector and an electromagnetic wave detector array having high detection sensitivity. An electromagnetic wave detector includes a semiconductor layer having a first surface, a two-dimensional material layer electrically connected to the semiconductor layer, a first electrode portion electrically connected to the two-dimensional material layer without the semiconductor layer therebetween, a second electrode portion electrically connected to the two-dimensional material layer via the semiconductor layer, and a thermoelectric conversion material layer. The thermoelectric conversion material layer is in contact with the two-dimensional material layer.
H10N 15/10 - Dispositifs thermoélectriques utilisant le changement thermique de la constante diélectrique, p. ex. en opérant au-dessus et en-dessous du point de Curie
A power conversion device includes a neutral point clamped multilevel power converter and a control device. The control device includes a modulation voltage generator which generates modulation phase voltage commands using phase voltage commands and phase currents, and a PWM modulator which generates gate signals for driving the power converter, using the modulation phase voltage commands. The modulation voltage generator calculates offset voltage so that, for a middle phase in which a high-low rank is middle among the phase voltage commands for respective phases, a polarity of the phase voltage command does not become opposite to a polarity of the phase current, and superimposes the offset voltage as first common voltage on the phase voltage commands for respective phases, to generate the modulation phase voltage commands.
H02M 1/00 - Détails d'appareils pour transformation
H02M 7/5395 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur avec commande automatique de la forme d'onde ou de la fréquence de sortie par modulation de largeur d'impulsions
A crack growth prediction device includes: a parameter input unit to which parameters of initial values of at least a shape of the structure, a force applied to the structure, a material characteristic of the structure, and a crack shape, including uncertainty of each parameter, are each inputted as a probability distribution; a model generation unit which generates a state space model for predicting a crack growth state constituted of a state equation and an observation equation from the inputted parameters; a crack shape measurement unit which measures the crack shape of the structure; and an estimation unit which estimates a posterior distribution including the crack shape and the parameters, from a probability distribution of a measurement value of the crack shape measured by the crack shape measurement unit and uncertainty due to measurement error, and a prior distribution of the crack shape predicted by the state space model.
G01N 3/08 - Recherche des propriétés mécaniques des matériaux solides par application d'une contrainte mécanique par application d'efforts permanents de traction ou de compression
59.
INFORMATION PROCESSING DEVICE, INFERENCE SYSTEM, AND CONTROL METHOD
An information processing device includes inference processing devices differing from each other in performance or a configuration, an acquisition unit that acquires a learned model, inference data as data to be used in an inference process, and an inference control program for having a data format of the inference data converted to a data format appropriate for a first inference processing device to be made to execute the inference process out of the inference processing devices and making the first inference processing device execute the inference process, a data format conversion unit that converts the data format of the inference data, and an inference control unit that makes the first inference processing device execute the inference process by use of converted inference data after the data format conversion and the learned model.
In a semiconductor characteristics measuring apparatus, a first potential difference measuring device measures a first potential difference between two connection terminals connected to first and second main electrodes, respectively, of a power semiconductor element. A second potential difference measuring device measures a second potential difference between two connection terminals connected at different positions of a current path of a main current to or from the second main electrode. When values of an element temperature and a main current specified based on a measurement value of the first potential difference match values of an element temperature and a main current specified based on a measurement value of the second potential difference, a processing device outputs the matching values of the element temperature and the main current as estimates at a present time point.
A distortion compensation device includes: an amplification target signal acquiring unit that acquires an amplification target signal to which power amplification by a power amplifier is performed; and an operation status signal acquiring unit that acquires an operation status signal indicating an operation status of the power amplifier. In addition, the distortion compensation device includes a distortion compensation unit that estimates a signal in which distortion is added to the amplification target signal acquired by the amplification target signal acquiring unit as a predistortion signal for compensating distortion generated in the amplification target signal after power amplification by the power amplifier on the basis of the amplification target signal acquired by the amplification target signal acquiring unit and the operation status signal acquired by the operation status signal acquiring unit, and outputs the predistortion signal to the power amplifier.
The image retrieval apparatus according to the disclosed technology is Image retrieval apparatus including, Feature reduction processing circuit, and Retrieval processing unit. Matrix calculator, included in the Feature reduction processing circuit, calculates matrix based on a stored data. Projection transforming portion, included in the Feature reduction processing circuit, multiplies the matrix to an image feature quantity acquired sequentially. Second projection transforming portion, included in the Retrieval processing unit, calculates low-dimensionalized image feature from the inputted image feature of the search target with the matrix. Search executing portion, included in the Retrieval processing unit, calculates distances between vectors calculated by the Projection transforming portion and the low-dimensionalized image feature in feature space, and performs search for plausible image features by using the distances. The vectors calculated by the Projection transforming portion belongs to a time-window-divided database.
G06F 16/56 - Recherche d’informationsStructures de bases de données à cet effetStructures de systèmes de fichiers à cet effet de données d’images fixes en format vectoriel
G06V 10/50 - Extraction de caractéristiques d’images ou de vidéos en effectuant des opérations dans des blocs d’imagesExtraction de caractéristiques d’images ou de vidéos en utilisant des histogrammes, p. ex. l’histogramme de gradient orienté [HoG]Extraction de caractéristiques d’images ou de vidéos en utilisant l’addition des valeurs d’intensité d’imageAnalyse de projection
G06V 10/52 - Analyse spatiale multi-échelle, p. ex. analyse par ondelettes
G06V 10/62 - Extraction de caractéristiques d’images ou de vidéos relative à une dimension temporelle, p. ex. extraction de caractéristiques axées sur le tempsSuivi de modèle
G06V 10/77 - Traitement des caractéristiques d’images ou de vidéos dans les espaces de caractéristiquesDispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant l’intégration et la réduction de données, p. ex. analyse en composantes principales [PCA] ou analyse en composantes indépendantes [ ICA] ou cartes auto-organisatrices [SOM]Séparation aveugle de source
G06V 10/82 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant les réseaux neuronaux
63.
COMMUNICATION SYSTEM, COMMUNICATION TERMINAL, AND BASE STATION
A communication terminal apparatus in a communication system, which includes the communication terminal apparatus and a base station apparatus configured to perform radio communication with the communication terminal apparatus, is configured to receive slice information on a slice of a Radio Access Network (RAN) from the base station apparatus.
H04W 48/18 - Sélection d'un réseau ou d'un service de télécommunications
H04W 48/10 - Distribution d'informations relatives aux restrictions d'accès ou aux accès, p. ex. distribution de données d'exploration utilisant des informations radiodiffusées
64.
POWER MODULE SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR APPARATUS
A power module semiconductor package comprises a substrate, a first power semiconductor device, a second power semiconductor device, a heat spreader, a sealing resin, and the like. In a plan view seen from a second major surface of the substrate, the first power semiconductor device includes a region that does not overlap with the second power semiconductor device and the substrate. The non-overlapping region is located at a substrate opening of the substrate. A first signal electrode of the first power semiconductor device and a first signal terminal are electrically connected to each other by a first bonding wire through the substrate opening.
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
65.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device includes: a drift layer of first conductivity type; a well region of second conductivity type on the drift layer; an impurity region of first conductivity type on the well region; a gate trench extending through the impurity region, well region, and drift layer; a termination trench connected to the gate trench, wider than the gate trench; a gate dielectric film on insides of the gate and termination trenches; a first gate electrode inside the gate and termination trenches; a field dielectric film on the first gate electrode in the termination trench, covering above a top corner of the termination trench farther from the gate trench; and a second gate electrode on tops of the field dielectric film and the first gate electrode, overlying the field dielectric film, thereby preventing destruction of the gate dielectric film on the top corner in a lead-out portion.
H10D 62/10 - Formes, dimensions relatives ou dispositions des régions des corps semi-conducteursFormes des corps semi-conducteurs
H10D 64/27 - Électrodes ne transportant pas le courant à redresser, à amplifier, à faire osciller ou à commuter, p. ex. grilles
H10D 64/68 - Électrodes ayant un conducteur couplé capacitivement à un semi-conducteur par un isolant, p. ex. électrodes du type métal-isolant-semi-conducteur [MIS] caractérisées par l’isolant, p. ex. par l’isolant de grille
A highly stable bond is obtained with variations in the bond being suppressed. A bonding method includes: disposing a temperature measurement unit such that temperatures of a first component and a second component can be measured; measuring the temperatures of the first component and the second component using the temperature measurement unit, with the second component being irradiated with a laser beam; reducing output of the laser beam when the measured temperature of the second component is higher than or equal to a first threshold value; and terminating the output of the laser beam when the measured temperature of the first component is higher than or equal to a second threshold value after the temperature of the second component is higher than or equal to the first threshold value.
An optical semiconductor device of the present disclosure has an effective refractive index nc, a wavelength λ, and an anti-reflection film formed of i coating films. The thickness of the kth coating film (1≤k≤i) is set at a value other than λ/2/nk. The refractive index of one or more coating films is greater than a refractive index nf which is the square root of nc. The refractive index of one or more coating films is smaller than nf. A characteristic matrix of the multilayer coating film is equal to that of a single-layer coating film of which a refractive index is nf and a thickness df is λ/4/nf. The thicknesses of (i−3) coating films are set in advance. The thicknesses of the remaining three coating films are determined by solutions of three simultaneous equations derived from the characteristic matrix of the multilayer coating film.
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
First and second semiconductor elements are connected in series between a DC positive bus and a DC neutral point bus. Third and fourth semiconductor elements are connected in series between the DC neutral point bus and a DC negative bus. Fifth and sixth semiconductor elements are connected in series between a connection point of the first and second semiconductor elements and a connection point of the third and fourth semiconductor elements. Each semiconductor element includes at least one semiconductor switching element and at least one diode. A breakdown resistance of the first and fourth semiconductor elements to cosmic rays is higher than a breakdown resistance of the second and third semiconductor elements to cosmic rays. A breakdown resistance of the fifth and sixth semiconductor elements is higher than the breakdown resistance of the first and fourth semiconductor elements.
A semiconductor optical modulator is formed by stacking a plurality of semiconductor layers including an optical modulation layer on a semiconductor substrate and emits light by modulating an intensity or a phase of light incident on the optical modulation layer. The optical modulation layer is formed using a digital alloy in which the semiconductor layers having a layer thickness of two or more atomic layers and having different constituent elements or composition ratios are alternately and repeatedly stacked.
G02F 1/015 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des éléments à semi-conducteurs ayant des barrières de potentiel, p. ex. une jonction PN ou PIN
70.
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR IDENTIFYING SEMICONDUCTOR DEVICE
A semiconductor device according to the present disclosure includes: a semiconductor substrate; semiconductor layers formed on the semiconductor substrate; an identification pattern region provided in a predetermined portion on the semiconductor substrate; and needle-shaped structures or dome-shaped structures in which the needle-shaped structures are covered with a SiO2 insulating film, which are formed at random positions within the identification pattern region.
An electromagnetic wave detector includes a first ferroelectric layer, a two-dimensional material layer, a first electrode pair, and a second electrode pair. The first electrode pair includes a first electrode and a second electrode. The second electrode pair includes a third electrode and a fourth electrode. The first electrode pair and the second electrode pair are electrically connected to the two-dimensional material layer. The third electrode and the fourth electrode are disposed to face each other in a first direction perpendicular to a polarization direction of spontaneous polarization of the first ferroelectric layer. The first electrode and the second electrode are disposed to face each other in a second direction different from the first direction.
H10N 15/10 - Dispositifs thermoélectriques utilisant le changement thermique de la constante diélectrique, p. ex. en opérant au-dessus et en-dessous du point de Curie
A power conversion device includes a power conversion unit and a control unit. The power conversion unit includes a first semiconductor module. The first semiconductor module includes a plurality of power semiconductor elements. Some of the plurality of power semiconductor elements are detection target elements. The power conversion unit further includes a temperature sensor and a voltage sensor. The temperature sensor detects a surface temperature of the detection target element as a sensor position temperature. The voltage sensor detects an inter-terminal voltage of the detection target element. The control unit calculates a loss in the detection target element based on the sensor position temperature and the inter-terminal voltage, and estimates a maximum temperature based on the calculated loss.
H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H10D 80/20 - Ensembles de plusieurs dispositifs comprenant au moins un dispositif couvert par la présente sous-classe l’au moins un dispositif étant couvert par les groupes , p. ex des ensembles comprenant des condensateurs, des transistors FET de puissance ou des diodes Schottky
73.
POINT CLOUD IDENTIFYING DEVICE, LEARNING DEVICE, POINT CLOUD IDENTIFYING METHOD, AND LEARNING METHOD
A point cloud identifying device includes a point cloud acquiring unit to acquire point cloud information indicating N (N≥2) points in k (k≥2) dimensions, a model acquiring unit to acquire a model having a learning parameter, a rotation invariant converting unit to perform orthogonalization of each of basis vectors for each of points indicated in the point cloud information, and calculate a rotation invariant feature by using data after the orthogonalization, an inference unit to identify a point cloud indicated in the point cloud information by using the rotation invariant feature and the model, and a result output unit to output a classification result by identification of the inference unit.
G06V 10/764 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant la classification, p. ex. des objets vidéo
G06V 10/776 - ValidationÉvaluation des performances
74.
Drive device, fluid utilization device, and air conditioner
A drive device includes a power converter, a first magnetic pole position identification unit, a second magnetic pole position identification unit, a subtractor, and a current control unit. The power converter supplies power to a main-side synchronous motor and a sub-side synchronous motor connected in parallel. The subtractor obtains an angular difference using the magnetic pole position of the rotor of the main-side synchronous motor identified by the first magnetic pole position identification unit and the magnetic pole position of the rotor of the sub-side synchronous motor identified by the second magnetic pole position identification unit. A magnetic flux current command compensation unit adjusts the absolute value of a magnetic flux current command based on the angular difference. The current control unit controls the power converter using a torque current command and the magnetic flux current command with the absolute value adjusted by the magnetic flux current command compensation unit.
H02P 1/54 - Dispositions de démarrage de moteurs électriques ou de convertisseurs dynamo-électriques pour faire démarrer des machines dynamo- électriques ou des convertisseurs dynamo-électriques pour faire démarrer plusieurs moteurs dynamo-électriques
H02P 5/00 - Dispositions spécialement adaptées à la régulation ou la commande de la vitesse ou du couple d’au moins deux moteurs électriques
H02P 5/46 - Dispositions spécialement adaptées à la régulation ou la commande de la vitesse ou du couple d’au moins deux moteurs électriques pour la régulation de vitesse de plusieurs moteurs dynamo-électriques en relation les uns avec les autres
H02P 5/50 - Dispositions spécialement adaptées à la régulation ou la commande de la vitesse ou du couple d’au moins deux moteurs électriques pour la régulation de vitesse de plusieurs moteurs dynamo-électriques en relation les uns avec les autres par comparaison de grandeurs électriques représentant les vitesses
H02P 21/18 - Estimation de la position ou de la vitesse
H02P 21/22 - Commande du courant, p. ex. en utilisant une boucle de commande
75.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a gate lifting portion being a region in which a portion of gate wiring is lifted from a trench onto an upper surface of a semiconductor substrate. A side wall of the trench in the gate lifting portion includes: a vertical portion being perpendicular to the upper surface of the semiconductor substrate; a horizontal portion being parallel to the upper surface of the semiconductor substrate; and a sloped portion provided between the vertical portion and the horizontal portion. The sloped portion has been sloped so that the trench is widened upward, and is straight in cross section. In cross section, a corner of the vertical portion and the sloped portion does not protrude inward of the trench from a region between a tangent to the vertical portion and a tangent to the sloped portion.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
76.
HEAT EXCHANGER, HEAT EXCHANGE UNIT, AND AIR CONDITIONER
A heat exchanger includes a heat exchanger main body that extends in a first direction, and has a heat transfer pipe having a plurality of fins attached thereto, and a holder attached to an end thereof. The heat transfer pipe has extension portions, and fold portions that connect to adjacent ends thereof. The holder has a base on one side of the heat exchanger main body, and a peripheral wall that protrudes to the first direction, and a partition wall that partitions an inside thereof in a second direction. Formed accommodations align in the second direction, and a through hole through which a fold portion is inserted, formed on each base on the accommodations. An inside edge of the through hole is disposed apart from the fold portion. The partition wall includes a first partition wall, and a through portion which penetrates the first partition wall, and is formed thereon.
F24F 1/0063 - Éléments intérieurs, p. ex. ventilo-convecteurs caractérisés par des échangeurs de chaleur par le montage ou la disposition des échangeurs de chaleur
F24F 1/0067 - Éléments intérieurs, p. ex. ventilo-convecteurs caractérisés par des échangeurs de chaleur par la forme des échangeurs de chaleur ou de leurs parties constitutives, p. ex. par la forme de leurs ailettes
F28F 9/007 - Supports auxiliaires pour les éléments
A refrigeration cycle apparatus includes a refrigerant circuit that includes a compressor. The refrigerant circuit is enclosed with refrigerant, the refrigerant circuit includes a component in contact with the refrigerant, and a surface of the component in contact with the refrigerant contains a crystalline resin material. When the temperature of the crystalline resin material is raised at a temperature rise rate of 10° C./min using a differential scanning calorimeter, a value obtained by differentiating an amount of heat measured by the differential scanning calorimeter with respect to time does not have an exothermic peak of 20 μ/mg/min or more in a temperature range of a glass transition temperature of the crystalline resin material to a melting point thereof.
A communication device includes a body, and a wireless communicator housed in the body for communicating wirelessly with an external device proximate to the body through magnetic coupling. The body is placed in an opening in a wall surface and fixed to the wall surface with an exposed surface of the body exposed from the wall surface. The wireless communicator includes a substrate including a coil pattern to allow the magnetic coupling with the external device. The substrate is nonparallel to the exposed surface.
A control device includes an input interface to receive input information from an input device, an output interface to output output information to an output device, a sampler that generates a request identifier uniquely identifying the input information and sampling data in which the input information and the request identifier are associated with each other and stores the sampling data into a storage, and a controller that processes the input information associated with the request identifier as a request, generates process state information about a process, and causes the output interface to output a result of the process as the output information. The sampler further associates at least one of the process state information or the output information with the sampling data and stores the sampling data into the storage.
A laser machining head includes: a first lens group in which laser light diverging from a light emitter enters and is concentrated; a second lens group to which the laser light having passed through the first lens group propagates; a third lens group that constitutes a lens group in which the laser light having passed through the second lens group propagates and forms an image of the light emitter; a fourth lens group in which the laser light having passed through the third lens group enters and is concentrated; a light flux conversion optical element that is disposed on an optical axis between the first lens group and the second lens unit and converts a beam mode of the laser light; a first mover that moves the first lens group in an optical axis direction; and a second mover that moves the third lens group in an optical axis direction.
A numerical aperture changing apparatus for rearranging spatial distributions or spatial positions of a plurality of laser beams incident from a laser oscillator, and condensing the plurality of rearranged laser beams for entry of the beams into a transmission fiber, the numerical aperture changing apparatus including: a light shielding member provided on an extension of an optical axis of the transmission fiber, the light shielding member blocking a reflected laser beam, the reflected laser beam being a laser beam traveling from the transmission fiber toward the laser oscillator.
B23K 26/064 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p. ex. lentilles, miroirs ou prismes
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
82.
RECORDING MEDIUM, PROGRAMMING ASSISTING DEVICE, AND PROGRAMMING ASSISTING METHOD
A programming assisting program causes a computer to function as a calculator that acquires, from a database storing information indicating an address space in a memory having a range pre-allocated to each type of component included in a project performed by a PLC, the information indicating the address space, and allocates components to the address space to calculate a use volume in the memory used by the project for each type of component, a determiner that determines, based on the use volume and an allocated volume in the memory determined based on the pre-allocated range, an allocated volume allocated to each type of component, a changer that changes, based on the determined allocated volume for each type of component, the range pre-allocated to each type of component, and a display that displays, for each type of component, the calculated use volume and the determined allocated volume on a screen.
A movable element that is an armature includes teeth including iron cores, an insulating holding member, and winding portions in which a coil is formed by winding an electric wire around the iron cores on the insulating holding member, the teeth include the teeth that are first teeth including the winding portions for only a coil of a single phase and the tooth that is a second tooth including the winding portions for coils of two phases different from each other, and a single electric wire forms the winding portions in the tooth that is the second tooth and is continuously wound via an intermediate fixing member provided on the insulating holding member.
An information processing system includes a pseudo keyword extraction unit that extracts a first pseudo keyword, which is a pseudo keyword, from learning text data for learning, a pseudo keyword assignment unit that assigns the first pseudo keyword to the learning text data, and a learning model generation unit that generates a learning model that has learned a correspondence relationship between context in the learning text data and the first pseudo keyword.
The semiconductor device includes a signal transmission element provided on an element structure in a high-withstand-voltage isolation region. The signal transmission element includes a primary coil that is provided on a side of a low potential region of the high-withstand-voltage isolation region and connected to the low potential region, and a secondary coil that is provided on a side of a high potential region of the high-withstand-voltage isolation region and connected to the high potential region. The primary coil and the secondary coil are magnetically coupled to each other by a magnetic field in a direction parallel to a main surface of a P type substrate.
An amplifier (Trc,Trp) uses a GaN HEMT. A diode linearizer (LNZ) and a variable attenuator (VATT) are connected in series to an input of the amplifier (Trc, Trp). A peak detector (DET) detects a peak value of a drain voltage of the amplifier (Trc,Trp). A controller (CTL) makes the diode linearizer (LNZ) function as a linearizer to reduce an attenuation amount of the variable attenuator (VATT) if the peak value exceeds a threshold.
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
Mitsubishi Electric Engineering Company Limited (Japon)
Inventeur(s)
Fujita, Yuki
Furusho, Yasuaki
Nagasawa, Shinobu
Ichinose, Hiroyuki
Abrégé
A noise filter includes: a noise detector which detects voltage due to electromagnetic noise generated by a power converter and outputs adjusted voltage obtained by adjusting the detected voltage; a compensation signal applicator which superimposes compensation voltage having a polarity opposite to the voltage due to electromagnetic noise, on an output or an input of the power converter via a transformer; and an injection voltage generator which generates, on the basis of the adjusted voltage, first output voltage and second output voltage having a polarity opposite thereto, for generating injection voltage between one end and another and of a primary-side winding of the transformer, and outputs the first output voltage and the second output voltage to the one end and the other end, respectively.
H03H 11/04 - Réseaux sélectifs en fréquence à deux accès
H02P 23/00 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par un procédé de commande autre que la commande par vecteur
A power control system includes: an energy storage system; and a power converter connected between an alternating-current power system and the energy storage system. The energy storage system includes a plurality of power storage circuits connected in parallel. The power storage circuit includes one or more power storage units, and a protection circuit between the power storage unit and the power converter. The protection circuit is configured to electrically disconnect, in the event of an anomaly at a corresponding power storage unit, the power storage unit from the power converter.
H02H 7/125 - Circuits de protection de sécurité spécialement adaptés aux machines ou aux appareils électriques de types particuliers ou pour la protection sectionnelle de systèmes de câble ou de ligne, et effectuant une commutation automatique dans le cas d'un changement indésirable des conditions normales de travail pour convertisseursCircuits de protection de sécurité spécialement adaptés aux machines ou aux appareils électriques de types particuliers ou pour la protection sectionnelle de systèmes de câble ou de ligne, et effectuant une commutation automatique dans le cas d'un changement indésirable des conditions normales de travail pour redresseurs pour convertisseurs ou redresseurs statiques pour redresseurs
H02M 1/00 - Détails d'appareils pour transformation
H02M 7/00 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continuTransformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif
H02M 7/04 - Transformation d'une puissance d'entrée en courant alternatif en une puissance de sortie en courant continu sans possibilité de réversibilité par convertisseurs statiques
Lens arrays of an image reading device in which lens bodies are arranged in a main scanning direction are connected with a gap therebetween. A plurality of first slit portions and a plurality of second slit portions are provided along the main scanning direction between the lens arrays and an image sensor. The first slit portion includes first light shielding plates that separate optical paths of light passed through the lens bodies. The second slit portion includes the first light shielding plates and a second light shielding plate that restricts an optical path of light passed through a lens body closest to the gap at a gap side. The position of the second light shielding plate in a direction along the optical path at the image sensor side is closer to the lens arrays than the first light shielding plates are.
A log data analysis support system includes multiple logging devices to generate log data by logging control data about device control, and a support device to support analysis of the log data. The logging devices provide logging durations to the support device. Each logging duration is a duration of logging of the control data. The support device includes an indicator that indicates each logging duration in a manner associated with a device ID identifying the corresponding logging device, a receiver that receives selection of at least one logging duration from the indicated logging durations, and a communicator that acquires the log data generated during the logging duration corresponding to the selection and generated by a logging device corresponding to the device ID associated with the logging duration. The indicator indicates information about the log data acquired by the communicator.
In a mobile communication system, a first base station and a second base station communicate with a user equipment in parallel. The first base station and the second base station transmit, to each other, a notification regarding release of the second base station from a parallel communication of the first base station and the second base station with the user equipment. The first base station transmits, to the user equipment, the notification regarding release of the second base station from the parallel communication of the first base station and the second base station with the user equipment. The user equipment transmits, to the first base station, the notification regarding release of the second base station from the parallel communication of the first base station and the second base station with the user equipment.
A program causes a simulation device to function as an acquirer that acquires an execution program executable by a programmable controller and system configuration information indicating a configuration of a factory automation system, and a simulator that performs simulations of an operation of the programmable controller and an operation of the factory automation system by synchronizing, in predetermined cycles, a first simulation time of a virtual controller corresponding to the programmable controller and a second simulation time of a virtual system built based on the system configuration information and causes the virtual system to operate based on a virtual output acquired from the virtual controller executing the execution program.
G05B 19/4155 - Commande numérique [CN], c.-à-d. machines fonctionnant automatiquement, en particulier machines-outils, p. ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'un programme sous forme numérique caractérisée par le déroulement du programme, c.-à-d. le déroulement d'un programme de pièce ou le déroulement d'une fonction machine, p. ex. choix d'un programme
A circuit board includes a plurality of connecting parts that is connectable to components, the plurality of connecting parts includes a first connecting part, a second connecting part, and a third connecting part, and a circuit pattern is formed in which the first connecting part, a power supply circuit, and the third connecting part are connected in series and the second connecting part, the power supply circuit, and the third connecting part are connected in series, and the third connecting part is configured so that two terminals of the third connecting part are short-circuitable when a component that needs power is not connected.
A semiconductor device includes a semiconductor substrate, a gate insulating film formed on an inner wall of a groove that reaches a drift layer from a surface of the semiconductor substrate, a gate trench and a raised electrode that are formed inside the groove on the gate insulating film, an interlayer insulating film, and an emitter electrode. The raised electrode includes a first raised electrode and a second raised electrode, the first raised electrode being connected to the emitter electrode via a contact via that penetrates the interlayer insulating film, the second raised electrode being positioned between the first raised electrode and the gate trench in a direction in which the groove extends in plan view. The second raised electrode includes a narrow width portion having a width narrower than a width of the first raised electrode in plan view.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
97.
METHOD, COMPUTER PROGRAM AND SYSTEM FOR CHARACTERIZING RADIOFREQUENCY ENVIRONMENT
A method for characterizing a radiofrequency environment, comprising: obtaining measurements of geometrical properties of physical objects in the environment, geometrical properties including at least respective positions and dimensions of objects, simulating radiofrequency ray-tracings involving a multiplicity of simulated rays, each ray being: emitted by a transmitter located in said environment in a transmitter position, and/or received by a receiver located in said environment in a receiver position,
each pair of a transmitter and a receiver positions defining therebetween a radiofrequency path where rays possibly interact with at least a part of objects, selecting, among all the paths, at least one path defined by rays interacting with the objects which interact the most with rays,
obtaining radiofrequency measurements of a radiofrequency channel defined by the selected path and estimating radiofrequency properties of objects interacting in selected path,
radiofrequency properties and geometrical properties of objects characterizing thereby environment.
A fiber preform includes first fiber tows located in a first area on a base, a second fiber tow located in a second area on the base other than the first area and stitched onto the base with a water-insoluble fixing thread, and a fixer located across the first fiber tows to fix parts of the first fiber tows to the base. The fixer is a third fiber tow stitched onto the base with a water-insoluble fixing thread, or the fixer is a glue or an elastic adhesive. The first fiber tows are displaceable relative to one another. The first area is displaceable relative to the second area.
B32B 7/09 - Liaison entre couches par des moyens mécaniques par couture, aiguilletage ou piqûre
B32B 1/00 - Produits stratifiés ayant une forme non plane
B32B 3/26 - Produits stratifiés comprenant une couche ayant des discontinuités ou des rugosités externes ou internes, ou une couche de forme non planeProduits stratifiés comprenant une couche ayant des particularités au niveau de sa forme caractérisés par une couche continue dont le périmètre de la section droite a une allure particulièreProduits stratifiés comprenant une couche ayant des discontinuités ou des rugosités externes ou internes, ou une couche de forme non planeProduits stratifiés comprenant une couche ayant des particularités au niveau de sa forme caractérisés par une couche comportant des cavités ou des vides internes
B32B 5/02 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par les caractéristiques de structure d'une couche comprenant des fibres ou des filaments
B32B 5/26 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par la présence de plusieurs couches qui comportent des fibres, filaments, grains ou poudre, ou qui sont sous forme de mousse ou essentiellement poreuses une des couches étant fibreuse ou filamenteuse un autre couche également étant fibreuse ou filamenteuse
B32B 7/12 - Liaison entre couches utilisant des adhésifs interposés ou des matériaux interposés ayant des propriétés adhésives
99.
OVERHEAT PROTECTION CONTROL DEVICE FOR POWER CONVERTER
In an overheat protection control device for a power converter, a heat amount calculation unit adds a value of a product of a current squared and time to a heat amount-equivalent value of a last time when an electric power is equal to or more than a first determination output value, and, when the electric power is less than the first determination output value, subtracts a subtraction value from the heat amount-equivalent value of the last time. When a heat amount-equivalent value calculated by the heat amount calculation unit becomes a first determination heat amount-equivalent value or larger, a power command unit restricts the electric power in the power converter, and lifts the restriction on the electric power in the power converter when the heat amount-equivalent value calculated by the heat amount calculation unit becomes a second determination heat amount-equivalent value or smaller.
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
A linear conveyance system includes a plurality of stator modules forming a conveyance path, and a mover including a plurality of magnets disposed on both side surfaces. The plurality of stator modules includes a one-side stator module and a both-side stator module, the one-side stator module being disposed on one side of a non-branch portion of the conveyance path, the both-side stator module being disposed on both sides of a branch portion of the conveyance path. Each of the one-side stator module and the both-side stator module includes an iron core and a plurality of coils. The mover is propelled by electromagnetic force produced by the plurality of coils. A coil amount of the one-side stator module is equal to a coil amount of the both-side stator module.
brevets
