Abrégé

A plating defects estimating method comprising a measuring step of measuring physical properties of a surface of an underlayer before a plating pre-treatment step of carrying out a plating pre-treatment on the underlayer; and an estimating step of estimating a degree of development of spikes on the underlayer, the spikes resulting from plating, based on the measured physical properties. A semiconductor device manufacturing method, comprising: an underlayer forming step of forming an underlayer on a surface of a semiconductor wafer; a plating pre-treatment step of carrying out a plating pre-treatment on the underlayer; a plating step of plating the underlayer subjected to the pre-treatment; a measuring step of measuring physical properties of a surface of the underlayer before the plating pre-treatment step; and an estimating step of estimating a degree of development of spikes on the underlayer, the spikes resulting from plating, based on the measured physical properties.

Classes IPC  ?

• H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
• G01N 21/84 - Systèmes spécialement adaptés à des applications particulières
• G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
• H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches