Provided is a polishing composition that can reduce post-polishing haze at the surface of a polished object. A polishing composition according to the present invention includes a silica sol that includes silica particles that have an average aspect ratio of at least 1.50, the percentage of silica particles in the silica sol that have an aspect ratio of at least 1.50 being at least 40%.
[Problem] To provide a technique for obtaining a new zinc oxide having little variation in particle size and aspect ratio, to provide a zinc oxide having a new average aspect ratio which has not been proposed in the prior art, and to provide a new zinc oxide production method which has not been proposed in the prior art. [Solution] A zinc oxide particle aggregate satisfying at least one of the following conditions: i) an average aspect ratio of 2.0-19.4 with a standard deviation of the aspect ratio being less than 2.0; ii) a standard deviation of a major axis of a plurality of zinc oxide particles being 4.5 μm or less; and iii) an average aspect ratio of more than 10.
Provided is a polishing composition capable of improving the polishing speed in the preliminary polishing of a silicon wafer. The present disclosure relates to a polishing composition used in the preliminary polishing of a silicon wafer, the polishing composition containing abrasive grains and at least one imidazole compound selected from the group consisting of imidazole and derivatives thereof (excluding 1-(3-aminopropyl)imidazole), the content of the imidazole compound being 0.005 mass% or more and less than 0.08 mass% in relation to the total mass of the polishing composition.
The present invention provides a polishing composition wherein combustive properties are reduced despite the use of sodium permanganate as an oxidizing agent, and solubility is not diminished. A polishing composition disclosed herein contains sodium permanganate that serves as an oxidizing agent, a metal salt A, and water. With respect to the metal salt A, (i) the metal salt A is a salt of an anion and a cation a that contains a metal having a pKa of a hydrated metal ion of 7.0 or more, and (ii) the solubility in water at 20°C of a permanganate salt of the cation a is equal to or lower than that of sodium permanganate. The concentration CA of the metal salt A is 200 mM to 550 mM inclusive. In addition, the content of sodium permanganate is more than 1% by weight.
The present invention provides a polishing composition with which it is possible to achieve an excellent polishing removal rate on an object to be polished through improving the solubility of potassium permanganate in the composition for polishing. A polishing composition disclosed herein includes potassium permanganate as an oxidizing agent, a metal salt A, and water. Here, the metal salt A is a salt of a cation a containing a metal having a hydrated metal ion pKa of 7.0 or more (excluding alkaline earth metal cations) and an anion, and a permanganate of the cation a has the same or larger solubility in water at 20°C than potassium permanganate. Also, the content of the potassium permanganate is 5.0 wt% or more, and the ratio (CA/CK) of the concentration CA [mM] of the metal salt A to the concentration CK [mM] of the potassium permanganate is larger than 0.1.
Provided is a polishing composition that can exhibit an excellent polishing removal rate and has a suitably suppressed combustion promoting property. A polishing composition disclosed herein comprises: sodium permanganate and potassium permanganate as an oxidizing agent; abrasive grains composed of a material having a Mohs hardness of 6 or more; and water. The ratio (CK/CS) of the concentration CK [mM] of the potassium permanganate to the concentration CS [mM] of the sodium permanganate is 0.33 or more. The content of the sodium permanganate is less than 22.5 wt%.
Provided is a polishing composition with which it is possible to effectively eliminate a partial protrusion that could be present on the surface of an object being polished while maintaining a polishing rate. The provided polishing composition includes abrasive grains, a basic compound, an additive A, and water. The additive A is a salt of an inorganic anion containing two or more phosphorus atoms.
Provided is a polishing composition with which protuberance eliminating capability at the edge of a laser marking can be improved while maintaining polishing rate. Provided is a polishing composition for preliminary polishing of a silicon wafer having a laser marking. The polishing composition contains abrasive grains, a basic compound, a water-soluble polymer, and an anionic surfactant.
[Problem] To provide a polishing composition having excellent processing power. [Solution] Provided is: a polishing composition containing abrasive grains, a polyoxyethylene alkyl ether, a hydrophobic dispersion medium, and water, wherein the polyoxyethylene alkyl ether has a C8-12 alkyl group, the polyoxyethylene alkyl ether is contained in an amount of 2.0 mol% or more when the hydrophobic dispersion medium content in terms of moles is 100 mol%; or a polishing composition containing abrasive grains, a flocculant, water, and a hydrophobic dispersion medium, the abrasive grains being such that the ratio (Dns50/Dws50) of the average secondary particle diameter Dns50 which is measured without performing a dispersion treatment using ultrasonic waves to the average secondary particle diameter Dws50 after a dispersion treatment using ultrasonic waves has been performed at an ultrasonic frequency of 28 kHz for 1 minute is 5-50.
Provided is a means capable of reducing impurities in titanium phosphate powder. This method for producing titanium phosphate powder comprises bringing a crude titanium sulfate solution and activated carbon into contact, filtering the product with a filter, and mixing the resulting titanium sulfate solution with a phosphoric acid solution to prepare a mixed solution.
REREE is a maximum light intensity at light receiving angles in a range of -42° to -40.5° at the time when the normal line to the surface coated with the SPF booster is taken as 0° and when the surface is irradiated with total light from an incidence angle of -45°. The SPF booster is a powder of crystalline titanium phosphate having a primary particle diameter D50 of 0.1-10 μm, the D50 being a particle diameter in a volume-based cumulative particle diameter distribution of the primary particles at which the cumulative frequency from the small-particle-diameter side is 50%.
The present invention provides a polishing composition that contains a cellulose derivative, the polishing composition being capable of maintaining low haze and having exceptional defect reduction properties. Provided is a polishing composition that contains a cellulose derivative and a basic compound. The weight-average molecular weight (Mw) of the cellulose derivative is less than 80,000.
Provided is a polishing composition which is used for polishing surfaces made of a silicon material and which can yield polished surfaces having excellent wettability and a reduced number of defects. The polishing composition is used for polishing surfaces made of a silicon material. The polishing composition comprises abrasive grains, a basic compound, a random copolymer comprising a vinyl alcohol unit and an N-vinylpyrrolidone unit, and a nonionic surfactant. The nonionic surfactant has a molecular weight of less than 3,000. The content α [wt%] of the nonionic surfactant is in the range of 0.00035<α<0.00500.
This invention provides a means that is capable of improving the surface quality of a polished object after polishing. This invention is a polishing composition used for polishing a surface made up of a silicon material, the polishing composition containing abrasive grains, a basic compound, a polyvinyl alcohol-based polymer, and polyhydric alcohol having a molecular weight of 600 or less.
The present disclosure provides a means that can provide a prepreg having a fine and dense matrix structure by improving the impregnability of the matrix between nonwoven fabric fibers. The present disclosure relates to a method for producing a unidirectional ceramic fiber prepreg, the method comprising: a step for preparing a plurality of unidirectionally oriented ceramic fibers and a ceramic particle-containing composition; a step for obtaining a coating film by coating the ceramic particle-containing composition on a support; a step for obtaining a ceramic particle-containing composition impregnated body by immersing the plurality of unidirectionally oriented ceramic fibers in the coating film; and a step for peeling the support, after the ceramic particle-containing composition impregnated body has been dried, to obtain a unidirectional ceramic fiber prepreg.
C04B 35/80 - Fibres, filaments, "whiskers", paillettes ou analogues
B28B 1/52 - Fabrication d'objets façonnés à partir du matériau spécialement adaptée à la fabrication d'objets à partir de mélanges contenant des fibres
B29B 11/16 - Fabrication de préformes caractérisées par la structure ou la composition comprenant des charges ou des agents de renforcement
B29C 70/20 - Façonnage de matières composites, c.-à-d. de matières plastiques comprenant des renforcements, des matières de remplissage ou des parties préformées, p. ex. des inserts comprenant uniquement des renforcements, p. ex. matières plastiques auto-renforçantes des renforcements fibreux uniquement caractérisées par la structure des renforcements fibreux utilisant des fibres de grande longueur, ou des fibres continues orientées dans une seule direction, p. ex. mèches ou autres fibres parallèles
C08J 5/04 - Renforcement des composés macromoléculaires avec des matériaux fibreux en vrac ou en nappes
D06M 11/45 - Oxydes ou hydroxydes d'éléments des groupes 3 ou 13 du tableau périodiqueAluminates
D06M 11/74 - Traitement des fibres, fils, filés, tissus ou des articles fibreux faits de ces matières, avec des substances inorganiques ou leurs complexesUn tel traitement combiné avec un traitement mécanique, p. ex. mercerisage avec du carbone ou ses composés avec du carbone ou du graphiteTraitement des fibres, fils, filés, tissus ou des articles fibreux faits de ces matières, avec des substances inorganiques ou leurs complexesUn tel traitement combiné avec un traitement mécanique, p. ex. mercerisage avec du carbone ou ses composés avec des carburesTraitement des fibres, fils, filés, tissus ou des articles fibreux faits de ces matières, avec des substances inorganiques ou leurs complexesUn tel traitement combiné avec un traitement mécanique, p. ex. mercerisage avec du carbone ou ses composés avec des acides graphitiques ou leurs sels
[Problem] The present invention addresses the problem of providing a polishing composition which is capable of further improving the polishing speed of an object to be polished such as silicon carbide, and is capable of maintaining the properties of the polishing composition even if stored at relatively high temperatures. [Solution] The present invention provides a polishing composition which contains an oxidizing agent, a zirconium (IV) salt that serves as a metal salt, and an aqueous medium.
The present invention provides a polishing composition that is for polishing a surface that comprises a silicon material, the polishing composition giving the surface excellent wettability after polishing and making it possible to reduce defects. Provided is a polishing composition for polishing a surface that comprises a silicon material. The polishing composition contains abrasive grains (A), a basic compound (B), a first water-soluble polymer (C1), and a second water-soluble polymer (C2) that has a different chemical structure from the first water-soluble polymer (C1). The first water-soluble polymer (C1) is a random copolymer that includes a vinyl alcohol unit and an N-vinylpyrrolidone unit.
The present invention provides: a silicon carbide powder which is unlikely to cause thickening even when added to a different material that is liquid, such as a liquid resin or molten metal; and a production method for the same. Provided is a silicon carbide powder comprising primary particles of silicon carbide for which the crystal system is α-type, wherein at least one element selected from aluminum, yttrium, and ytterbium is contained on the surfaces of the primary particles of silicon carbide, and the Hausner ratio of the silicon carbide powder is not more than 2.1.
C04B 35/565 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de carbures à base de carbure de silicium
The present invention provides a polishing composition which exhibits an improved polishing rate with respect to a non-altered surface, while maintaining or improving the polishing rate with respect to an altered surface. A polishing composition disclosed herein contains abrasive grains and a basic compound A. With respect to the basic compound A, the sum of the atomic weights of atoms constituting the cation or conjugate acid of the basic compound A is 40 or more, and the cation or conjugate acid of the basic compound A does not contain a carbon atom.
The present invention provides a means for adjusting the polishing removal rate of a metal material relative to the polishing removal rate of a resin material, while maintaining the polishing removal rates high, in polishing of a polishing object that contains the resin material and the metal material. The present disclosure relates to a polishing composition which is used for polishing of a polishing object that contains a resin material and a metal material, and which contains abrasive grains, a first amine compound that has 0 or one amino group, a second amine compound that has two or more amino groups, and a dispersion medium.
105050 at which the cumulative particle volume from the smallest particle size accounts for 50% of the total particle volume is at most 40 μm. At 1 atm, the difference between the highest value and the lowest value of the boiling points of the plurality of metal oxides is at least 500°C. By using said powder for thermal spraying, the ratio of phase separation can be reduced while denseness is enhanced and surface roughness is reduced in a thermal-sprayed coating.
Provided are a high-performance polishing composition, a method for producing same, and a polishing method. The polishing composition contains abrasive particles, water, and a hydrophobic dispersion medium. In the particle size distribution of the abrasive particles, when the cumulative volume of the abrasive particles from the large particle size side in the cumulative particle size distribution on a volume basis becomes 10%, 50%, and 90%, respectively, are defined as D10, D50, and D90, respectively, the particle size distribution width (D10-D90)/D50 of the abrasive particles is 0.4 to 2.0, and the specific surface area (m2/g) of the abrasive particles is 12 to 20.
5050) of greater than 1.0 µm and a primary particle roundness of at least 0.90. The anti-caking agent is inorganic particles different from the abrasive grains, and the product of the zeta potential of the abrasive grains and the zeta potential of the anti-caking agent is positive.
The present invention provides a method for producing a polishing composition in which it is easy to confirm the degree of dissolution of a chelating agent during the production process. Provided is a method for producing a polishing composition for polishing a surface formed of a silicon material. The method for producing a polishing composition comprises: preparing a basic chelating agent-containing liquid that contains a basic compound, water, and a chelating agent; and mixing the chelating agent-containing liquid and a silica dispersion liquid that contains silica particles and water.
Provided is a polishing composition with which surface roughness after polishing can be improved. Also provided is a polishing composition used for polishing a surface composed of a silicon material. This polishing composition comprises abrasive grains and a water-soluble polymer, wherein the abrasive grains includes organic particles. In some aspects, the organic particles may be one or more types of particles selected from among an acrylic resin, a styrene resin, a styrene-acrylic resin, a polyamide resin, a polyimide resin, an epoxy resin, a polyester resin, a polyurethane resin, a phenolic resin, a melamine resin, a benzoguanamine resin, a polyethersulfone resin, and a polytetrafluoroethylene resin.
The present invention provides a polishing composition capable of improving polishing removal speed. The polishing composition contains resin particles and an oxidizing agent, the oxidizing agent contains a composite metal oxide, and the concentration of organic particles is at least 0.01 wt%.
The present invention provides a polishing composition with which friction on a polishing target can be reduced while maintaining a satisfactory polishing speed. The polishing composition contains inorganic particles, an oxidizing agent, and resin particles, the oxidizing agent contains a composite metal oxide, and the ratio (Nrp/Nip) of the number (Nip) of inorganic particles and the number (Nrp) of resin particles is 80 or higher.
Provided are a high-performance polishing composition, a method for producing the same, and a polishing method. The polishing composition contains abrasive grains, water, and a hydrophobic dispersion medium. The value of a shape parameter K, obtained by dividing the specific surface area (m2/g) by the square of the particle diameter D50 (μm) of the abrasive grains, is from 0.6 to 60.
Provided is a technology that enhances the uniformity of components in a thermally sprayed film. The thermal spraying powder disclosed herein is thermal spraying powder for forming an electrode of a solid oxide fuel cell or a solid oxide electrolysis cell. This thermal spraying powder has a granule strength of at least 25 MPa.
The present invention provides a technique for improving the uniformity of components in a spray coating. The powder for thermal spraying disclosed herein is a powder for thermal spraying for forming an electrode of a solid oxide fuel cell or a solid oxide electrolytic cell. This powder for thermal spraying has a peak in a range of 0.15-1 µm inclusive in a log differential pore volume distribution having a pore diameter of 1 µm or less obtained by a mercury press-in method.
The present invention provides a means that is capable of sufficiently removing residues present on the surface of a polished silicon carbide substrate. The present invention pertains to a method for polishing and washing a silicon carbide substrate, the method comprising: a step for supplying a polishing composition to the silicon carbide substrate and polishing the same; and a step for washing the polished silicon carbide substrate using a washing agent. The washing agent contains a chelating agent, a surfactant, and a solvent. The solvent consists only of water.
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
B23Q 11/00 - Accessoires montés sur les machines-outils pour maintenir les outils ou les organes de la machine dans de bonnes conditions de travail ou pour refroidir les pièces travailléesDispositifs de sécurité spécialement combinés aux machines-outils, disposés dans ces machines ou spécialement conçus pour être utilisés en relation avec ces machines
B24B 37/00 - Machines ou dispositifs de rodageAccessoires
C04B 35/505 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de composés de terres rares à base d'oxyde d'yttrium
Provided is a polishing composition with which it is possible to achieve high HLM rim protrusion resolving ability. Provided is a polishing composition containing abrasive grains, a basic compound, a water-soluble macromolecule A, a water-soluble macromolecule B, and water. The water-soluble macromolecule A is a polymer having a unit structure that is expressed by general formula (1) (In the formula, R1is a hydrocarbon group having 5 or fewer carbon atoms, and R2 is a hydrogen atom or a hydrocarbon group having 3 or fewer carbon atoms.), and the water-soluble macromolecule B is a polymer having no cellulose structure in the molecule.
Provided is a polishing composition with which it is possible to achieve high HLM rim protrusion resolving ability while suppressing the occurrence of defects and residue. Provided is a polishing composition containing abrasive grains, a basic compound, a water-soluble macromolecule, and water. In the abrasive grains, the average secondary particle diameter D2 measured by a dynamic light scattering method is larger than 60 nm. The polishing composition contains, as the water-soluble macromolecule, a water-soluble macromolecule a that is a polymer a having a constituent unit that is expressed by general formula (1) (In the formula, R1is a hydrocarbon group having 5 or fewer carbon atoms, and R2 is a hydrogen atom or a hydrocarbon group having 3 or fewer carbon atoms.).
The present invention provides a polishing composition with which it is possible to improve the post-polishing surface quality of an object to be polished. The present disclosure relates to a polishing composition containing: (A) abrasive grains; (B) a compound α having a polyethylene oxide structure and a polypropylene oxide structure; (C) a water-soluble polymer different from the compound α; (D) a basic compound; and (E) a dispersion medium. (B) The compound α is contained at 0.0001 mass% or more with respect to the total mass of the polishing composition, and the ratio [{(B) + (C)}/(A)] of the total mass of (B) the compound α and (C) the water-soluble polymer to the mass of (A) the abrasive grains is 0.058 or more and less than 0.150.
The present invention provides a polishing composition with which it is possible to improve the surface flatness and the ability to eliminate a bump at the periphery of an HLM, while maintaining a polishing rate. Provided is a polishing composition for polishing a silicon wafer. The polishing composition contains: silica particles that serve as abrasive grains; a compound A; a basic compound; and a water-soluble polymer. The compound A has an aliphatic hydrocarbon group a having 11 or less carbon atoms, and an ionic functional group b.
The present invention provides technology that enables a decrease in the risk that a powder material will be scattered by imparting energy thereto in an additive manufacturing process. This powder material for additive manufacturing comprises a first material which is constituted by a ceramic and a second material which is constituted by at least one element from among magnesium (Mg), zinc (Zn), molybdenum (Mo), tungsten (W), copper (Cu), aluminum (Al), carbon (C), and silicon (Si). The powder material is constituted by composite particles in which the first material and the second material are mixed.
C22C 29/02 - Alliages à base de carbures, oxydes, borures, nitrures ou siliciures, p. ex. cermets, ou d'autres composés métalliques, p. ex. oxynitrures, sulfures à base de carbures ou de carbonitrures
C22C 29/12 - Alliages à base de carbures, oxydes, borures, nitrures ou siliciures, p. ex. cermets, ou d'autres composés métalliques, p. ex. oxynitrures, sulfures à base d'oxydes
C22C 29/16 - Alliages à base de carbures, oxydes, borures, nitrures ou siliciures, p. ex. cermets, ou d'autres composés métalliques, p. ex. oxynitrures, sulfures à base de nitrures
C22C 32/00 - Alliages non ferreux contenant entre 5 et 50% en poids d'oxydes, de carbures, de borures, de nitrures, de siliciures ou d'autres composés métalliques, p. ex. oxynitrures, sulfures, qu'ils soient soient ajoutés comme tels ou formés in situ
B28B 1/30 - Fabrication d'objets façonnés à partir du matériau en appliquant le matériau sur un noyau ou une autre surface de moulage pour former une couche sur celle-ci
B33Y 70/10 - Composites de différents types de matériaux, p. ex. mélanges de céramiques et de polymères ou mélanges de métaux et de biomatériaux
B22F 10/34 - Commande ou régulation des opérations des caractéristiques de la poudre, p. ex. densité, oxydation ou fluidité
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
B22F 1/12 - Poudres métalliques contenant des particules non métalliques
The present invention provides a polishing composition that allows etching to proceed efficiently. Provided is a polishing composition containing: silica particles as the abrasive grains; a basic compound; and water. Here, the basic compound includes an organic amine A represented by general formula (1) described in claim 1 of the present application, and a basic compound B that is a different basic compound from the organic amine A. Here, in formula (1), R1 is a hydrogen atom or an organic group, and X is an oxygen atom or a sulfur atom.
Provided are a polishing composition, a substrate protection agent, and manufacturing methods therefor, said polishing composition containing a cellulose derivative, and being effective for reducing surface defects after polishing. Provided is a manufacturing method for a polishing composition containing abrasive grains, a basic compound, a cellulose derivative, and a surfactant. Said manufacturing method comprises a step (A) for producing a base cellulose derivative solution by dissolving a base cellulose derivative in a solvent, and either: a step (B1) for heating the base cellulose derivative solution, and a step (B2) for adding a base surfactant to the base cellulose derivative solution that has undergone the step (B1); or a step (C1) for producing an additive-agent mixed liquid by adding a base surfactant to the base cellulose derivative solution, and a step (C2) for heating the additive-agent mixed liquid.
Provided is a polishing composition capable of achieving high HLM rim protrusion resolving ability while maintaining a polishing rate. Also provided is a polishing composition for preliminarily polishing the surface of a silicon material. The polishing composition contains abrasive grains, a basic compound, a water-soluble polymer, and water. The water-soluble polymer contains a nonionically modified polyvinyl alcohol-based polymer. Here, the nonionically modified polyvinyl alcohol-based polymer does not include a hydroxyl group in a modified structural unit.
Provided is a polishing composition containing a water-soluble polymer, the polishing composition being capable of achieving a high-quality surface without compromising polishing rate. The polishing composition comprises: silica particles (A) as abrasive particles; a basic compound (B); a modified polyvinyl alcohol-based polymer (C1) as a water-soluble polymer (C); and a chelating agent (D). The modified polyvinyl alcohol-based polymer (C1) exhibits an etching rate of 20 nm/hour or less as determined on the basis of a predetermined etching rate measurement.
The present invention provides means for preventing sedimentation of abrasive grains and improving redispersibility of abrasive grains, while improving polishing performance. The present invention relates to a polishing composition comprising abrasive grains, an oxidant, a metal cation exhibiting a hydrated metal ion pKa of less than 7.0, a metal salt A which is a salt with an anion, a layered compound, and a dispersant, the polishing composition including the metal salt A at a concentration of 8 mM or more.
[Problem] To provide a chemical-mechanical polishing (CMP) composition for polishing a molybdenum surface. [Solution] Provided is a CMP composition comprising, in specific amounts, abrasive grains, a molybdenum (Mo) removal rate enhancer, a TEOS removal rate enhancer, an oxidizer, and water. The CMP composition maintains a high Mo (RR) removal rate : Mo (ER) etching rate selectivity, and exhibits advantageous properties such as a high Mo and TEOS removal rate.
[Problem] To provide a polishing composition and a polishing method which enable barrier polishing at a removal speed ratio that is controllable for tantalum, cobalt and copper. [Solution] A polishing composition comprising small (about 12 nm) anionic modified abrasive particles, a metal corrosion inhibitor, and a phosphate surfactant can achieve a selectivity for Co from Ta of 10 or more and a selectivity for Co from Cu of about 1.
[Problem] To provide a columnar zinc oxide manufacturing method whereby columnar zinc oxide can be obtained at a high content ratio. [Solution] A columnar zinc oxide manufacturing method that includes a step for preparing a sheet-shaped zinc compound having an electrical conduction rate of 0.5 mS/cm or lower in a supernatant liquid, and a step for heating a dispersion liquid containing the sheet-shaped zinc compound and a dispersion medium to 50°C or higher, said heating being carried out such that the weight change rate of the dispersion liquid from before to after heating is 2% or less.
Provided is a polishing composition that can achieve an excellent polishing/removal rate for a polishing target. The polishing composition provided by the present invention is used for polishing a polishing target. The polishing composition contains water, sodium permanganate that functions as an oxidizer, and a transition metal salt that is different from the oxidizer. The oxidizer is contained in an amount more than 10 wt%. In some preferable modes, the transition metal salt is an oxy-transition metal salt or a multinuclear transition metal complex formed of a transition metal and oxygen and/or hydrogen. The polishing composition can be preferably applied for polishing of a polishing target that is composed of a high-hardness material having a Vickers hardness of 1500 Hv or more.
The present invention relates to a polishing composition including abrasive grains and a dispersion medium, wherein the pH is less than 5.0, the abrasive grains comprise surface-modified silica particles having an organic acid immobilized on surfaces thereof, the surface coverage of silanol groups present on the surfaces of the surface-modified silica particles is more than 0% but not more than 6.0%, and the average primary particle diameter of the abrasive grains is 20-100 nm inclusive. According to the present invention, the polishing speed of a silicon oxide film is improved, and a means for polishing a silicon oxide film and a silicon nitride film at approximately the same speed is provided.
The present invention provides a polishing composition that can realize a high-quality surface. The polishing composition includes silica particles (A), a basic compound (B), a first water-soluble polymer (C1), a second water-soluble polymer (C2), and water (D), wherein the first water-soluble polymer (C1) is a polyvinyl alcohol-based polymer. The product (ER×ζ) of the etching rate ER [μm/h] of the polishing composition and the zeta potential ζ [mV] of the polishing composition is -900 nmV/h to -90 nmV/h inclusive.
C08L 29/04 - Alcool polyvinyliqueHomopolymères ou copolymères d'esters partiellement hydrolysés d'alcools non saturés avec des acides carboxyliques saturés
C08L 101/14 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par des propriétés physiques, p. ex. anisotropie, viscosité ou conductivité électrique les composés macromoléculaires étant solubles dans l'eau ou gonflables dans l'eau, p. ex. gels aqueux
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
5050) exceeds 1.0 μｍ and in which the circularity of primary particles is 0.90 or more, and a dispersion degree D of the abrasive grains is 2.0 or less.
Provided is a polishing composition capable of imparting a high surface quality and improving the polishing rate. Specifically provided is a polishing composition containing: silica particles that serve as abrasive grains; a basic compound; water; a cellulose derivative as a first water-soluble polymer; a polyvinyl alcohol-based polymer as a second water-soluble polymer; and a nitrogen atom-containing polymer as a third water-soluble polymer. In the polishing composition, the ratio (C1/(C2+C3)) of the content C1 of the first water-soluble polymer with respect to the total of the content C2 of the second water-soluble polymer and the content C3 of the third water-soluble polymer is 0.1 or greater.
C08L 29/04 - Alcool polyvinyliqueHomopolymères ou copolymères d'esters partiellement hydrolysés d'alcools non saturés avec des acides carboxyliques saturés
C08L 33/26 - Homopolymères ou copolymères de l'acrylamide ou de la méthacrylamide
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
Provided is a polishing composition capable of imparting a high surface quality and improving the polishing rate. Specifically provided is a polishing composition containing: silica particles (A); a basic compound (B); a first water-soluble polymer (C1); a second water-soluble polymer (C2); and an alkali metal salt of an inorganic acid (D) (excluding alkali metal carbonates).
MITSUBISHI HEAVY INDUSTRIES AERO ENGINES, LTD. (Japon)
FUJIMI INCORPORATED (Japon)
TOCALO CO., LTD. (Japon)
Inventeur(s)
Kinouchi, Arata
Masuda, Takaya
Habu, Yoichiro
Takagi, Kaito
Noda, Kazuo
Abrégé
A method for applying a thermal barrier coating according to one embodiment includes a step for forming a topcoat layer on a bond coat layer formed on a heat-resistant alloy substrate of an object. In the step for forming the topcoat layer, the topcoat layer is formed by spraying a suspension including ceramic powder by atmospheric pressure plasma spraying while cooling a part of plasma flame by supplying water as a cooling fluid around the plasma flame at a supply rate of 25-100 ml/min (inclusive).
F01D 5/28 - Emploi de matériaux spécifiésMesures contre l'érosion ou la corrosion
F01D 25/00 - Parties constitutives, détails ou accessoires non couverts dans les autres groupes ou d'un intérêt non traité dans ces groupes
F02C 7/00 - Caractéristiques, parties constitutives, détails ou accessoires non couverts dans, ou d'un intérêt plus général que, les groupes Entrées d'air pour ensembles fonctionnels de propulsion par réaction
56.
DISPERSION FOR SINTERED-CERAMIC OBJECT FORMATION, GREEN SHEET FOR SINTERED-CERAMIC OBJECT FORMATION, PREPREG FOR SINTERED-CERAMIC OBJECT FORMATION, AND SINTERED CERAMIC OBJECT
The present invention provides a means whereby a dispersion for sintered-ceramic object formation comprising ceramic particles, a resin, and a plasticizer is inhibited from suffering the bleeding-out of some of the components during the formation of a sintered ceramic object. This invention relates to a dispersion for sintered-ceramic object formation comprising the following (A) to (D) components and having a pH at 25°C of 4.0 or higher: (A) component, ceramic particles; (B) component, a resin; (C) component, a plasticizer; and (D) component, water.
C08L 101/00 - Compositions contenant des composés macromoléculaires non spécifiés
C08L 101/06 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par la présence de groupes déterminés contenant des atomes d'oxygène
[Problem] To provide a polishing composition and method capable of controlling the SiN removal rate. [Solution] According to the present invention, a polishing composition that contains water, a SiN polishing rate inhibitor, and a polishing agent including cationic particles and that has a pH lower than 5 can reduce the SiN polishing rate with respect to a second material X (e.g., spin-on carbon). In addition, a polishing composition that contains water, a SiN polishing rate accelerator, and a polishing agent including cationic particles, and that has a pH not lower than 5 can increase the SiN polishing rate with respect to the second material X (e.g., spin-on carbon).
The present invention provides a means which makes it possible to polish a target object at a high polishing rate and also makes it possible to maintain the surface quality of the polished target object at a good level. The present invention is a polishing composition comprising abrasive grains and a basic compound, in which the basic compound comprises ammonia and a piperazine compound, and the content ratio C1 of the piperazine compound represented by formula (1) is more than 0% and 5.5% or less when the content of the ammonia in the polishing composition is defined as A1 (unit: % by mass) and the content of the piperazine compound in the polishing composition is defined as B1 (unit: % by mass).
The present disclosure relates to chemical-mechanical polishing (CMP) compositions for polishing polycrystalline silicon carbide-containing surfaces. More particularly, the polishing compositions are in the form of a slurry with a pH of 8 or more comprising an oxidant and an abrasive.
The present invention provides a novel composition suitable for polishing. Provided is a polishing composition containing: silica particles as the abrasive grains; a basic compound; and water. The polishing composition further contains an inorganic acid ammonium salt.
Provided is a polishing composition that makes it possible to achieve an excellent polishing removal speed with respect to a polished object while improving the surface quality of a polished surface after polishing. The polishing composition contains sodium permanganate as an oxidizing agent. The polishing composition either contains abrasive grains A having a Mohs hardness of less than 8 as abrasive grains or does not contain abrasive grains. The polishing composition can even be suitably applied when polishing a polished object formed from a high-hardness material with a Vickers hardness of 1500 Hv or more.
[Problem] To provide a method for producing a polishing composition which has satisfactory filtration properties and can reduce defects on the surface of an object of interest. [Solution] Provided is a method for producing a polishing composition that comprises a modified polyvinyl alcohol composition comprising a modified polyvinyl alcohol or a derivative thereof and water, the method including a keep-warm step for keeping the modified polyvinyl alcohol composition at a solution temperature of 30°C or higher and lower than 60°C, in which the keep-warm step is performed in such a manner that a parameter A becomes 2.0 or more.
C08L 29/14 - Homopolymères ou copolymères d'acétals ou de cétals obtenus par polymérisation d'acétals ou de cétals non saturés ou par post-traitement des polymères d'alcools non saturés
The purpose of the present invention is to provide a polishing composition which can achieve an excellent polishing/removal rate for an object of interest. Provided is a polishing composition which is intended to be used for the polishing of an object of interest. The polishing composition contains water and sodium permanganate that acts as an oxidizing agent. In some preferred aspects, the polishing composition further contains a metal salt selected from salts each composed of a cation containing a metal belonging to any one of Group 3 to Group 16 on the periodic table and an anion. The polishing composition can be preferably applied to the polishing of an object of interest that is composed of a high-hardness material having a Vickers Hardness of 1500 Hv or more.
Provided is a polishing composition capable of achieving both maintenance of a polishing rate and elimination of bulging of the periphery of a hard laser mark (HLM), the polishing composition comprising abrasive grains, a basic compound, a lithium salt, and water.
Provided is a polishing composition which can achieve both maintenance of a polishing rate and an HLM periphery protrusion elimination ability. This polishing composition contains grains, a basic compound, a salt of a sulfur-containing anion, and water.
Provided is a polishing composition which has an excellent ability to eliminate bulging around an HLM, and which can improve polishing rate. The polishing composition comprises abrasive grains, a basic compound, and water. In addition, the polishing composition includes spherical abrasive grains as the abrasive grains, and includes an alkali metal salt.
Provided is a sliding apparatus having excellent sliding properties and low frictional resistance with a snow surface or ice surface. The sliding apparatus for sliding on a slide object (snow surface or ice surface) has a slide surface (1) that contacts the slide object. This slide surface (1) is divided into a plurality of regions (1A, 1B, 1C) each having the surface arithmetic average roughness Ra different from one another, these plurality of regions (1A, 1B, 1C) being disposed in order along the longitudinal direction. The surface arithmetic average roughness Ra of a front region (1A), which is the region that first contacts the slide object during sliding, is less than the surface arithmetic average roughness Ra of a rear region (1B), which is positioned further rearward in the sliding direction than the front region (1A), among the plurality of regions (1A, 1B, 1C).
Provided are a polishing composition that can increase polishing speed for silicon nitride, a polishing composition production method, a polishing method, and a semiconductor substrate production method. The polishing composition includes: abrasive grains having a zeta potential of no more than –5 mV; and a cationic surfactant.
Provided are silicon carbide particles that exhibit a high circularity. In α-type crystal-system silicon carbide particles according to the present invention, the value obtained by dividing an area value calculated through image analysis of granules thereof by an equivalent circle area value calculated from the maximum diameter of the granules is 80% or more as expressed in percentage.
Provided is a method for producing a resin member for a production process of electronic devices which makes it possible to suppress, for a long period of time, adhesion of an adhering substance on a surface. A method for producing a resin member according to the present invention that is used in a production process of electronic devices comprises a processing step of carrying out abrasive machining of the surface of a raw member so that the surface roughness Ra becomes not more than 100 nm and the contact angle of pure water with respect to the surface becomes not less than 70° to less than 110°.
[Problem] To provide a polishing composition that has a superior working force and that has good washability after polishing. [Solution] A polishing composition including: abrasive grains; water; and a hydrophobic dispersion medium. The hydrophobic dispersion medium includes at least one type selected from the group consisting of normal paraffin hydrocarbons, isoparaffin hydrocarbons, naphthene hydrocarbons, and terpene hydrocarbons. The polishing composition has a flash point of 30-100℃ or a vapor pressure at 20℃ of 0.004-2 kPa or less.
[Problem] To provide a means which, when used for polishing works comprising polysilicon and silicon nitride, is effective in inhibiting both insufficient polishing and dishing. [Solution] A polishing composition which comprises abrasive grains, ammonia, and at least one potassium compound selected from the group consisting of potassium hydroxide and potassium salts, wherein the content of the ammonia is 0.002-0.5 mass% with respect to the whole mass of the polishing composition and the content of the potassium compound is 0.004-0.5 mass% with respect to the whole mass of the polishing composition.
Provided is a polishing composition that can polish a resin-made object to be polished at high polishing speed and that can polish the surface of the resin-made object to be polished so as to be flat and smooth. This polishing composition includes abrasive grains, a surfactant, and water, wherein the surfactant contains an acetylene compound of chemical formula (1) below having a carbon-carbon triple bond. In chemical formula (1) below, R1, R2, R3, and R4each independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms; R5and R6 each independently represent a substituted or unsubstituted alkylene group having 1 to 5 carbon atoms; m is an integer of not less than 1; n is an integer of not less than 0; and m + n is not more than 50. This polishing composition is used for polishing a resin-made object to be polished.
PLPTPLPTPT50 of primary particles) is 5 or more; and the particle diameter D10 of secondary particles, at which the accumulated frequency from the smallest particle diameter reaches 10% in the volume-based cumulative particle size distribution, the particle diameter D50 of secondary particles, at which the accumulated frequency from the smallest particle diameter reaches 50% in the volume-based cumulative particle size distribution, and the particle diameter D90 of secondary particles, at which the accumulated frequency from the smallest particle diameter reaches 90% in the volume-based cumulative particle size distribution, satisfy a specific relationship. The present invention also relates to a method for producing this plate-like titanium pyrophosphate.
The powder material for layer-by-layer shaping disclosed herein comprises tungsten carbide (WC), cobalt (Co), and a carbon additive including carbon (C) as a main constituent element, and the value of a carbon content A (% by mass), which is represented by the following formula: [(mass of C derived from WC) + (mass of C derived from carbon additive)]/(mass of WC) × 100, satisfies the condition of 6.4 ≤ A ≤ 7.2.
C22C 29/08 - Alliages à base de carbures, oxydes, borures, nitrures ou siliciures, p. ex. cermets, ou d'autres composés métalliques, p. ex. oxynitrures, sulfures à base de carbures ou de carbonitrures à base de carbures mais ne contenant pas d'autres composés métalliques à base de carbure de tungstène
B29C 64/153 - Procédés de fabrication additive n’utilisant que des matériaux solides utilisant des couches de poudre avec jonction sélective, p. ex. par frittage ou fusion laser sélectif
B33Y 70/00 - Matériaux spécialement adaptés à la fabrication additive
B22F 3/105 - Frittage seul en utilisant un courant électrique, un rayonnement laser ou un plasma
B22F 3/16 - Compactage et frittage par des opérations successives ou répétées
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 10/28 - Fusion sur lit de poudre, p. ex. fusion sélective par laser [FSL] ou fusion par faisceau d’électrons [EBM]
77.
POLISHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND POLISHING COMPOSITION SET
The present invention provides a means for reducing surface defects in a substrate after the polishing of the substrate. The present invention relates to a method for polishing a substrate, the method comprising a polishing step, in which the polishing step includes at least two polishing stages each for rotating a polishing plate while supplying a polishing composition to a contact surface between the substrate and a polishing pad attached to the polishing plate to polish the substrate, in which the at least two polishing stages include a polishing stage 1 for polishing on the polishing plate using a polishing composition S1 and a polishing stage 2 for polishing on the same polishing plate as that used in the polishing stage 1 using a polishing composition S2 subsequent to the polishing stage 1, the polishing composition S1 comprises abrasive grains 1, water, and a water-soluble polymer having an abrasive grain adsorption parameter of 5 or more, the polishing composition S2 comprises abrasive grains 2, water, and a water-soluble polymer having the abrasive grain adsorption parameter of less than 5, and the water-soluble polymer having the abrasive grain adsorption parameter of 5 or more is not contained in an amount of 0.005% by mass or more.
Provided is a powder having a high transmittance, which is suitable as a filler for a resin or an optical material that requires transparency. This powder comprises crystalline tabular titanium phosphate particles, and the proportion of particles having particle sizes between 0.52 μm and 0.87 μm inclusive is 7.0% by mass or lower.
Provided is a polishing pad which has a high tracking performance even if a surface to be polished is a curved surface. A polishing pad (1) according to an embodiment of the present invention is provided with a polishing layer (2) having a polishing surface (21), and a supporting layer (3) which comprises a material softer than the polishing layer (2), and which is fixed to a surface (22) on the opposite side of the polishing layer (2) to the polishing surface (21), wherein the hardness of the supporting layer (3) is an F hardness of at least 30 and less than 70.
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
B24B 27/00 - Autres machines ou dispositifs à meuler
B24B 37/00 - Machines ou dispositifs de rodageAccessoires
B24B 37/22 - Tampons de rodage pour travailler les surfaces planes caractérisés par une structure multicouche
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
Provided are a polishing method and a polishing composition that are applied for polishing silicon carbide and that enable suppression of an increase in pH of the polishing composition and an increase in the temperature of a pad during polishing. Provided is a method for polishing a polishing target having a surface formed from silicon carbide. The method comprises a step for preparing a polishing composition, and a step for supplying the polishing composition to the polishing target and polishing said polishing target. The polishing composition contains a permanganate, a metal salt A, and water. The metal salt A is formed between an anion, and a metal cation the hydrated metal ion thereof having a pKa less than 7.0.
The present invention provides a polishing composition which is capable of suppressing an increase in the temperature of a polishing pad during polishing. A polishing composition according to the present invention contains: water; an oxidant A that is selected from among compounds other than peroxides; a first metal salt that is selected from among alkaline earth metal salts; and a second metal salt that is selected from among salts of an anion and a cation of a metal in groups 3 to 16 of the periodic table.
The present invention provides a polishing composition which contains abrasive grains, a permanganate salt, an aluminum salt and water. With respect to this polishing composition, the concentration W1 (% by weight) of the abrasive grains, the concentration C1 (mM) of the permanganate salt and the concentration C2 (mM) of the aluminum salt satisfy at least one of the conditions (A), (B) and (C) described below. (A) Both 500 ≤ (C1/W1) and 0.04 ≤ (C2/C1) are satisfied. (B) Both 200 ≤ (C1/√(W1)) and 8 ≤ C2 are satisfied. (C) Both 500 ≤ (C1/W1) and 8 ≤ C2 are satisfied.
Provided is a polishing composition that can suppress a decrease in the polishing rate and reduce an edge roll-off amount after polishing, both at a high level. Provided is polishing composition for use in a preliminary polishing step for a silicon substrate. The polishing composition comprises an abrasive, a basic compound, a surfactant, a chelating agent, and water, and comprises, as the surfactant, a surfactant I having a repeating structure of an oxyalkylene unit.
Provided is a polishing composition capable of achieving at a high level both suppression of a reduction in polishing rate and elimination of bulging in HLM periphery. Provided is a polishing composition that is for use in a step for preliminary polishing of a silicon wafer. The polishing composition comprises abrasive grains, a basic compound, a chelating agent, a surfactant, a nitrogen-containing water-soluble polymer, and water. The ratio (B/S) of the weight concentration (B) of the basic compound to the weight concentration (S) of the surfactant is 50 or more.
The present invention provides a means capable of achieving a high polishing speed when polishing a silicon wafer. The present invention relates to a polishing composition used to polish a silicon wafer, the polishing composition comprising: a nitrogen-containing organic compound having a highest occupied molecular orbital (HOMO) energy level of at least -9.50 eV; and water.
The present invention provides a means for decreasing a surface roughness (Ra) while keeping a high polishing speed in the polishing of an object comprising a resin and a filler. A polishing composition according to the present invention is intended to be used for the polishing of an object comprising a resin and a filler, the polishing composition comprising alumina particles, colloidal silica particles and a dispersion medium, in which the average particle diameter of the alumina particles is smaller than 2.8 μm and the average particle diameter of the colloidal silica particles is smaller than the average particle diameter of the alumina particles.
Provided is a thermal spray film which has excellent plasma erosion resistance, which provides long-term protection of members of a plasma etching device, and which can contribute to the stable production of devices and the long life of the members. The thermal spray material according to one embodiment of the present invention is constituted of a composite containing: a rare earth fluoride at a ratio of 40 to 80 mol%; magnesium fluoride at a ratio of 10 to 40 mol%; and calcium fluoride at a ratio of 0 to 40 mol%.
C23C 4/04 - Revêtement par pulvérisation du matériau de revêtement à l'état fondu, p. ex. par pulvérisation à l'aide d'une flamme, d'un plasma ou d'une décharge électrique caractérisé par le matériau de revêtement
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
89.
THERMAL SPRAY MATERIAL, THERMAL SPRAY METHOD USING SAME, AND THERMAL SPRAY COATING FILM
To provide a novel polishing composition suited to polishing. Provided is polishing composition for silicon wafers. The polishing composition contains a basic compound, a surfactant, and water. The surfactant is an acetylene-glycol-type compound having one acetylene group per molecule and moreover is a compound to which an alkylene oxide has furthermore been added.
To provide a soft focus filler having excellent transmittance and haze. The soft focus filler of the present invention comprises a powder composed of plate-like crystal particles of titanium phosphate.
A61K 8/02 - Cosmétiques ou préparations similaires pour la toilette caractérisés par une forme physique particulière
A61Q 1/02 - Préparations contenant des colorants cutanés, p. ex. pigments
92.
METHOD FOR PRODUCING SEMICONDUCTOR WETTING AGENT CONTAINING POLY(VINYL ALCOHOL) COMPOSITION, POLISHING COMPOSITION CONTAINING SEMICONDUCTOR WETTING AGENT OBTAINED USING THIS PRODUCTION METHOD, AND METHOD FOR PRODUCING POLISHING COMPOSITION
[Problem] To provide a method for producing a semiconductor wetting agent that contains a poly(vinyl alcohol) composition, wherein the occurrence of aggregates is effectively suppressed. [Solution] Provided is a method for producing a semiconductor wetting agent that contains a poly(vinyl alcohol) composition, the method having an in-liquid addition step in which the poly(vinyl alcohol) composition is a solution of one of a first liquid, which contains poly(vinyl alcohol) and water, and a second liquid other than the first liquid, and the other of the first liquid and the second liquid is added to the solution.
C08L 29/04 - Alcool polyvinyliqueHomopolymères ou copolymères d'esters partiellement hydrolysés d'alcools non saturés avec des acides carboxyliques saturés
The present invention provides a cleaning agent which exhibits an exceptional cleaning effect for polished gallium oxide substrates. Provided is a cleaning agent for cleaning polished gallium oxide substrates. This cleaning agent contains a surfactant.
Provided is a novel grinding composition suited to grinding. The grinding composition contains a basic compound and water. The grinding composition further contains a surfactant having two hydrophilic bases and two hydrophobic bases in the molecule.
The purpose of the present invention is to provide a method for satisfactorily cleaning a substrate comprising a high-hardness material after the polishing of the substrate. Provided is a method for polishing and cleaning a substrate comprising a material having a Vickers hardness of 1500 Hv or more. This method comprises: a step for polishing a substrate of interest with a polishing composition; and a step for cleaning the polished substrate with a cleaning agent. The polishing composition contains a polishing auxiliary agent. The cleaning agent contains a surfactant.
Provided is a polishing composition capable of reducing post-polishing haze on the surface of a substrate. This polishing composition contains abrasive grains, a basic compound, water, and a compound represented by formula (I). R1, R2, R3, and R4in formula (I) are respectively independently hydrogen, an alkyl group, a hydroxyl group, and a group selected from the group consisting of hydroxyalkyl groups. If the hydroxyl group does not exist in formula (I), the total number of carbon atoms in R1, R2, R3, and R4 is 1 or more.
Provided is a powder having excellent concealing power, such that the powder can be used in place of titanium dioxide as a white pigment in a cosmetic. This powder comprises planar crystal particles, the volume D50% diameter thereof is 0.7-8.0 µm, and the coefficient of variation (CV value) of the primary particle diameter is 1.0 or less.
22333 desorption analysis of 25 μmol/g or greater; and bringing a liquid containing one or more elements to be adsorbed into contact with the mesoporous alumina to thereby adsorb the elements onto the mesoporous alumina. The elements to be adsorbed are one or more elements selected from the group consisting of elements belonging to the fourth to sixth periods and Groups 3-15 of the periodic table.
B01D 15/00 - Procédés de séparation comportant le traitement de liquides par des adsorbants ou des absorbants solidesAppareillages pour ces procédés
B01J 20/08 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant des oxydes ou des hydroxydes des métaux non prévus dans le groupe contenant de l'oxyde ou de l'hydroxyde d'aluminiumCompositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant des oxydes ou des hydroxydes des métaux non prévus dans le groupe contenant de la bauxite
The present invention provides a polishing composition which is capable of polishing the surface of a polycrystalline ceramic smooth. This polishing composition contains abrasive grains and water; and the average secondary particle diameter of the abrasive grains is from 5 nm to 40 nm. This polishing composition is used for polishing of a polishing object that contains a polycrystalline ceramic.
PREPRE of the preparatorily polished substrate as measured with an AFM is 0.1 nm or less, and the polishing allowance in the step for the finishing polishing is 0.3 μm or more.
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