The present disclosure provides a means capable of reducing scratches on a surface of a polished object to be polished (particularly, silicon oxide). The present disclosure is a polishing composition containing abrasive grains, an inorganic salt, an organic onium salt, in which the organic onium salt contains at least one of a tetraalkylammonium salt represented by Chemical Formula 1 below or a tetraalkylphosphonium salt represented by Chemical Formula 2 below, and a zeta potential of the abrasive grains in the polishing composition is negative:
The present disclosure provides a means capable of reducing scratches on a surface of a polished object to be polished (particularly, silicon oxide). The present disclosure is a polishing composition containing abrasive grains, an inorganic salt, an organic onium salt, in which the organic onium salt contains at least one of a tetraalkylammonium salt represented by Chemical Formula 1 below or a tetraalkylphosphonium salt represented by Chemical Formula 2 below, and a zeta potential of the abrasive grains in the polishing composition is negative:
in the Chemical Formula 1 and the Chemical Formula 2,
R1 to R8 each independently represent an unsubstituted alkyl group having 1 or more and 4 or less carbon atoms, and
A− and X− each independently represent a monovalent anion.
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing silicon (Si) surfaces. In particular, the CMP composition includes a first and second removal rate enhancer and a silica abrasive to provide a composition with advantageous properties such as high Si removal rate while also maintaining low polish debris formation.
Provided herein are CMP compositions, and methods for polishing surfaces comprising amorphous carbon, spin-on carbon (SoC), and/or diamond like carbon (DLC) films. The CMP compositions of the present disclosure contain at least one abrasive having zirconia particles and may also contain at least one metal-containing oxidizer.
An object of the present invention is to provide a polishing composition that can polish objects to be polished, including organic films, at a high rate. A further object of the present invention is to provide a polishing composition that can suppress remaining of abrasive grains after polishing. A polishing composition for polishing an object to be polished, comprising abrasive grains and a liquid medium, wherein the abrasive grains comprise zirconia particles, and wherein the zirconia particles have an effective elasticity ratio of 50 to 220 GPa.
An object is to provide a polishing composition capable of reducing a polishing removal rate of polysilicon. An object is to provide a means capable of reducing a polishing removal rate of polysilicon and further reducing defects on a surface of polysilicon after polishing. A polishing composition contains abrasive grains and a polishing removal rate inhibitor that reduces a polishing removal rate of polysilicon, and the polishing removal rate inhibitor is a water-soluble polymer meeting all requirements below: 1) a number average molecular weight is 200 or more and 600 or less; 2) a compound having a repeating unit formed of AO in which A is an alkylene group and O is an oxygen atom is contained; and 3) a compound having a special repeating unit in which two oxygen atoms are further added to the repeating unit is contained in an amount of more than 0 mass % and less than 0.1 mass % with respect to the entire water-soluble polymer.
The purpose of the present invention is to provide a novel method for producing a polishing composition and a novel method for producing a rinse composition, which enables reducing coarse particles and enables suppressing generation of defects. The method for producing a polishing composition includes preparing a first liquid by providing an abrasive grain dispersion containing abrasive grains and water, and filtering the abrasive grain dispersion; preparing a second liquid by providing at least one chemical component-containing aqueous solution containing a chemical component and water, and filtering the aqueous solution when one chemical component-containing aqueous solution is provided, or filtering a mixture X containing at least one chemical component-containing aqueous solution; and mixing the first liquid and the second liquid to prepare a third liquid, and filtering the third liquid.
Systems and methods are provided for chemical planarization. The polishing composition for polishing the wafer includes an abrasive, a pH adjuster, and an oxidizer while the rinse composition for rinsing the wafer includes at least one polymer and a pH adjuster. A ratio of an oxidation-reduction potential of the rinse composition to an oxidation-reduction potential of the polishing composition is greater than 0 and less than 0.76.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
An object of the present invention is to provide a polishing composition that can polish objects to be polished, including organic films, at a high rate. A further object of the present invention is to provide a polishing composition that can suppress remaining of abrasive grains after polishing. A polishing composition for polishing an object to be polished, comprising abrasive grains and a liquid medium, wherein the abrasive grains comprise zirconia particles, and wherein the zirconia particles have a Zr—C ratio of 5.5 to 21%.
There are provided a polishing composition and a polishing method that enable high-speed polishing of simple-substance silicon under acidic conditions. A polishing composition for polishing simple-substance silicon contains: abrasives; and an adsorbing compound, in which, the pH is 1 or more and 6 or less, when a substrate having a surface containing simple-substance silicon is subjected to polishing of the surface using an aqueous solution containing the adsorbing compound and water, and then the adhesion force of the abrasives to the surface of the polished substrate and the coverage of the adsorbing compound are measured, a value obtained by multiplying the adhesion force and the coverage is more than 50 and less than 100, the adhesion force is attachment strength between the abrasives and the surface of the substrate calculated by the force curve measurement using a probe provided in an atomic force microscope, the probe contains the same material as that of the abrasives and has a tip portion having the same radius of curvature as that of the abrasives, and the coverage is the ratio of the area of a part covered with the adsorbing compound of the surface of the substrate to the area of the entire surface of the substrate.
There are provided a slurry composition suppressed in a change in physical properties and capable of being imparted with stable polishing performance even after stored over a long period of time, a method for storing the slurry composition, a method for producing a CMP slurry, and a polishing method.
There are provided a slurry composition suppressed in a change in physical properties and capable of being imparted with stable polishing performance even after stored over a long period of time, a method for storing the slurry composition, a method for producing a CMP slurry, and a polishing method.
A slurry composition contains: colloidal silica; and an acidic compound, in which the pH is less than 7, the colloidal silica has a surface modified by an aminosilane coupling agent, and, when the average secondary particle diameter of the colloidal silica is set to dp [mm], the ratio of the volume of the colloidal silica to the volume of the slurry composition is set to F, and the ratio of circumference of circle to its diameter is set to π, the average distance between particle surfaces h of the colloidal silica represented by Equation (1) is less than 65 nm,
There are provided a slurry composition suppressed in a change in physical properties and capable of being imparted with stable polishing performance even after stored over a long period of time, a method for storing the slurry composition, a method for producing a CMP slurry, and a polishing method.
A slurry composition contains: colloidal silica; and an acidic compound, in which the pH is less than 7, the colloidal silica has a surface modified by an aminosilane coupling agent, and, when the average secondary particle diameter of the colloidal silica is set to dp [mm], the ratio of the volume of the colloidal silica to the volume of the slurry composition is set to F, and the ratio of circumference of circle to its diameter is set to π, the average distance between particle surfaces h of the colloidal silica represented by Equation (1) is less than 65 nm,
[
Math
.
1
]
h
=
d
p
{
(
3
3
π
f
+
5
6
)
-
1
}
.
(
1
)
The present disclosure provides a polishing composition used for polishing an object to be polished containing a resin material, wherein a silica particle, and water are contained, and the silica particle has a secondary particle size D50 of 50 nm or more.
Provided is a method for producing a silica sol capable of increasing the ratio of heteromorphized silica particles. A method for producing a silica sol according to an aspect of the present disclosure includes a step of preparing a first liquid including silica core particles having an average value of longest diameters of primary particles of 20 nm or less, and a step of preparing a second liquid including linked silica core particles by holding the first liquid for 72 hours or longer.
The present disclosure is to provide means capable of improving a polishing removal rate of an object to be polished (particularly, silicon oxide) and reducing scratches on a surface of a polished object to be polished (particularly, silicon oxide). The present disclosure provides a polishing composition containing abrasive grains in which an average primary particle size is 1 nm or more and 150 nm or less, and a dispersing medium, in which an aggregation rate of the abrasive grains is 40% or more and less than 75%.
The present disclosure provides a means capable of reducing defects on a surface of a resin material after polishing while maintaining a high polishing removal rate in polishing of a polishing target containing a resin material.
The present disclosure provides a means capable of reducing defects on a surface of a resin material after polishing while maintaining a high polishing removal rate in polishing of a polishing target containing a resin material.
The present disclosure is a polishing composition used for polishing a polishing target containing a resin material, the polishing composition containing water and alumina particles, in which, in the alumina particles, when a particle size at which a cumulative frequency from a small particle size side is 2% in a volume-based particle size distribution is denoted by D2, a particle size at which a cumulative frequency from a small particle size side is 50% in a volume-based particle size distribution is denoted by D50, a particle size at which a cumulative frequency from a small particle size side is 98% in a volume-based particle size distribution is denoted by D98, a BET specific surface area is denoted by SA, and a theoretical specific surface area calculated from the D50 is denoted by SA′, a degree of deformity N represented by formula (1) below satisfies a relationship of formula (2) below, and a degree of distortion S represented by formula (3) below satisfies a relationship of formula (4) below.
The present disclosure provides a means capable of reducing defects on a surface of a resin material after polishing while maintaining a high polishing removal rate in polishing of a polishing target containing a resin material.
The present disclosure is a polishing composition used for polishing a polishing target containing a resin material, the polishing composition containing water and alumina particles, in which, in the alumina particles, when a particle size at which a cumulative frequency from a small particle size side is 2% in a volume-based particle size distribution is denoted by D2, a particle size at which a cumulative frequency from a small particle size side is 50% in a volume-based particle size distribution is denoted by D50, a particle size at which a cumulative frequency from a small particle size side is 98% in a volume-based particle size distribution is denoted by D98, a BET specific surface area is denoted by SA, and a theoretical specific surface area calculated from the D50 is denoted by SA′, a degree of deformity N represented by formula (1) below satisfies a relationship of formula (2) below, and a degree of distortion S represented by formula (3) below satisfies a relationship of formula (4) below.
Degree
of
deformity
N
=
SA
SA
′
(
1
)
2
≤
N
≤
6
(
2
)
Degree
of
distortion
S
=
(
D
5
0
/
D
2
)
(
D
9
8
/
D
5
0
)
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3
)
0.5
≤
S
≤
0
.
8
0
(
4
)
To provide compositions and methods of polishing molybdenum surfaces that have a high removal rate and low static etch rate for molybdenum. Provided is a polishing composition, comprising: an abrasive, an oxidizer containing halogen oxoacids or salts thereof, a first inhibitor comprising a diamine, and a second inhibitor comprising a triamine.
There is provided a means capable of sufficiently removing organic residues present on the surface of an object to be polished after polishing containing silicon nitride or polysilicon. A surface treatment composition containing: a polymer having a constituent unit represented by Formula (1) in [Chem. 1] below; at least one of an anionic surfactant and a nonionic surfactant; and water, in which the surface treatment composition is used for treating the surface of an object to be polished after polishing,
There is provided a means capable of sufficiently removing organic residues present on the surface of an object to be polished after polishing containing silicon nitride or polysilicon. A surface treatment composition containing: a polymer having a constituent unit represented by Formula (1) in [Chem. 1] below; at least one of an anionic surfactant and a nonionic surfactant; and water, in which the surface treatment composition is used for treating the surface of an object to be polished after polishing,
in which, in Formula (1) above, R1 is a hydrocarbon group having the number of carbon atoms of 1 to 5, and R2 is a hydrogen atom or a hydrocarbon group having the number of carbon atoms of 1 to 3.
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces.
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces.
In particular, the CMP composition includes abrasive grains, a molybdenum (Mo) removal rate enhancer, a TEOS removal rate enhancer, an oxidizer, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo and TEOS removal rates while maintaining high Mo (RR) removal rate:Mo (ER) etching rate selectivity.
The present invention is to provide a means for improving a polishing removal rate of an object to be polished. There is provided a polishing composition containing: abrasive grains; a dispersing medium; and a water-soluble polymer, in which the abrasive grains are silica particles having an average particle size (d50) of more than 1.0 μm and a circularity of primary particles of 0.90 or more, and a dispersion degree D of the abrasive grains is 2.0 or less.
[Problem] To provide a production method of a columnar zinc oxide capable of obtaining a columnar zinc oxide at a high content proportion.
[Problem] To provide a production method of a columnar zinc oxide capable of obtaining a columnar zinc oxide at a high content proportion.
[Means for solution] A production method of a columnar zinc oxide, including a step of preparing a plate-shaped zinc compound in which an electrical conductivity of a supernatant liquid is 0.5 mS/cm or less, and a step of heating a dispersion liquid containing the plate-shaped zinc compound and a dispersing medium to 50° C. or higher, in which the heating is performed so that a weight change rate of the dispersion liquid before and after heating is 2% or less.
Polishing compositions and methods are provided which enable barrier polishing with tunable removal rate ratios for tantalum, cobalt, and copper.
Polishing compositions and methods are provided which enable barrier polishing with tunable removal rate ratios for tantalum, cobalt, and copper.
Polishing compositions comprising small (about 12 nm) anionically-modified abrasive particles, a metal corrosion inhibitor, and a phosphate surfactant are capable of achieving Ta to Co selectivities of greater than 10 and Cu to Co selectivities of approximately 1.
Provided is a polishing composition that can offer a high-grade surface. The polishing composition contains silica particles (A), a basic compound (B), a first water-soluble polymer (C1), a second water-soluble polymer (C2), and water (D), wherein the first water-soluble polymer (C1) is a polyvinyl alcohol-based polymer. A product (ER×ζ) of an etching rate ER [nm/h] of the polishing composition and zeta potential ζ [mV] of the polishing composition is −900 pmV/h or more and −90 pm V/h or less.
Provided is a polishing composition capable of realizing high polishing removal rate on an object to be polished. The polishing composition provided by this invention is used for polishing an object to be polished. The polishing composition includes water, sodium permanganate as an oxidant, and a transition metal salt different from the oxidant. The polishing composition includes the oxidant in an amount of more than 10 wt %. In some preferable embodiments, the transition metal salt is an oxo-transition metal salt, or a multi-nuclear transition metal complex including a transition metal and one or both of oxygen and hydrogen. The polishing composition can be preferably used in polishing an object formed of a high-harness material having a Vickers hardness of 1500 Hv or higher.
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
23.
DISPERSION FOR FORMING CERAMIC SINTERED BODY, GREEN SHEET FOR FORMING CERAMIC SINTERED BODY, PREPREG MATERIAL FORMING CERAMIC SINTERED BODY, AND CERAMIC SINTERED BODY
The present invention provides means for preventing the occurrence of bleeding-out of some components during the formation of a ceramic sintered body in a dispersion for forming a ceramic sintered body containing ceramic particles, a resin, and a plasticizer. The present disclosure relates to a dispersion for forming a ceramic sintered body, containing components (A) to (D) below and having a pH at 25° C. of 4.0 or more:
a component (A): ceramic particles,
a component (B): a resin,
a component (C): a plasticizer, and
a component (D): water.
The present invention relates to a polishing composition containing abrasive grains and a dispersing medium, in which a pH is less than 5.0, the abrasive grains are surface-modified silica particles in which an organic acid is immobilized on a surface thereof, a surface coverage of silanol groups present on the surface of the surface-modified silica particles is more than 0% and 6.0% or less, and an average primary particle diameter of the abrasive grains is 20 nm or more and 100 nm or less. According to the present invention, there is provided a means capable of improving a polishing removal rate of a silicon oxide film and polishing a silicon oxide film and a silicon nitride film at the substantially same rate.
[Problem] To provide polishing compositions and methods that can enable control over the SiN removal rate.
[Problem] To provide polishing compositions and methods that can enable control over the SiN removal rate.
[Solution] Polishing compositions comprising an abrasive comprising cationic particles; a SiN polishing rate suppressor; and water, wherein the composition has a pH of less than 5, are capable of reducing the polishing rate of SiN to a second material X (e.g., spin-on carbon). Polishing compositions comprising an abrasive comprising cationic particles; a SiN polishing rate enhancer; and water, wherein the composition has a pH of less than or equal to 5, are capable of increasing the polishing rate of SiN to a second material X (e.g., spin-on carbon).
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
26.
SURFACE TREATMENT METHOD, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE INCLUDING THE SURFACE TREATMENT METHOD, COMPOSITION FOR SURFACE TREATMENT, AND SYSTEM FOR PRODUCING SEMICONDUCTOR SUBSTRATE INCLUDING THE COMPOSITION FOR SURFACE TREATMENT
The present invention provides a means capable of sufficiently removing a residue containing inorganic oxide abrasive grains present on the surface of a polished object to be polished containing silicon nitride. One aspect of the present invention relates to a surface treatment method for reducing a residue containing inorganic oxide abrasive grains on a surface of a polished object to be polished containing silicon nitride using a composition for surface treatment, wherein the composition for surface treatment contains a zeta potential adjusting agent having a negatively charged functional group and having a viscosity of an aqueous solution having a concentration of 20% by mass at 25° C. of 10 mPa·s or more and a dispersing medium, and the surface treatment method includes controlling a zeta potential of the silicon nitride and a zeta potential of the inorganic oxide abrasive grains each to −30 mV or less using the composition for surface treatment.
A polishing composition having excellent bump cancellation ability at a periphery of an HLM and being able to improve a polishing removal rate is provided. This polishing composition contains an abrasive, a basic compound, and water. The polishing composition contains a globular abrasive as the abrasive and further contains an alkali metal salt.
An object of the present invention is to provide a novel polishing composition capable of reducing remaining of an object to be polished, which has to be polished, such as polysilicon, and suppressing recesses. There is provided a polishing composition containing colloidal silica, an alkali metal salt, and water, a pH of the polishing composition being 9.0 to 11.5, wherein (i) in an object to be polished including a first layer provided with a recess portion and a second layer formed to fill the inside of the recess portion, the polishing composition is used for a step of polishing the second layer to expose the first layer, the first layer is selected from a layer having an oxygen-silicon bond and a layer having a nitrogen-silicon bond, and the second layer has a silicon-silicon bond, and/or (ii) the number of silanol groups in the colloidal silica is 6/nm2 or more and 22/nm2 or less.
The present invention provides a mechanism capable of reducing a polishing removal rate of polysilicon and further reducing defects (organic residues, for example) on a surface of polysilicon after polishing.
The present invention provides a mechanism capable of reducing a polishing removal rate of polysilicon and further reducing defects (organic residues, for example) on a surface of polysilicon after polishing.
The present invention is a polishing composition containing: abrasive grains; a removal rate inhibitor that reduces a polishing removal rate of polysilicon; and a defect reducing agent that reduces defects on a surface of polysilicon, wherein the removal rate inhibitor is a water-soluble polymer having a polyoxyalkylene chain, which has a number average molecular weight of 200 or more and 600 or less, and in which a content of a component with a molecular weight of 700 or more is more than 0% by mass and less than 1% by mass.
There is provided a polishing composition capable of improving a polishing removal rate of a certain film type and suppressing a polishing removal rate of another certain film type, that is, capable of controlling a so-called polishing selection ratio, in an object to be polished containing two or more different film types. The present invention relates to a polishing composition containing abrasive grains, an acid, a polishing inhibitor, and an oxidizing agent, in which the abrasive grains have a positive zeta potential, the acid is an organic acid, the polishing inhibitor contains a nonionic surfactant, the oxidizing agent is hydrogen peroxide, and a pH of the polishing composition is 2 or more and 4 or less.
An object of the present invention is to provide a means capable of sufficiently removing residues remaining on the surface of a polished object to be polished containing a silicon-containing material.
An object of the present invention is to provide a means capable of sufficiently removing residues remaining on the surface of a polished object to be polished containing a silicon-containing material.
The present invention is a post-chemical mechanical polishing cleaning composition containing a nitrogen-containing nonionic polymer and an anionic polymer containing a sulfonic acid group, in which the content of the nitrogen-containing nonionic polymer is more than 0.1% by mass and less than 1.0% by mass with respect to the entire post-chemical mechanical polishing cleaning composition, and the pH is less than 7.0.
An object of the present invention is to provide a powder material for additive manufacturing capable of forming an additive-manufactured product having more excellent mechanical strength. The present invention provides a powder material for additive manufacturing containing a carbide ceramic and a metal, in which a content of the metal is 8 to 43 volume % with respect to a total amount of the carbide ceramic and the metal, and in an XRD spectrum of an additive manufactured product obtained by additive manufacturing including laser light irradiation, peaks other than those derived from the powder material before the laser light irradiation are not included; or a solid solubility of the carbide ceramic in the metal at 1250° C. is 8 mass % or less.
Provided is a mechanism capable of further reducing the number of residues remaining on a surface of a polished object to be polished after CMP. A post-chemical mechanical polishing cleaning composition containing the following components (A) and (B), and having a pH of more than 7.0 and 10.0 or less is provided:
Component (A): a nonionic polymer
Component (B): at least one compound selected from the group consisting of a compound having an amino group and a hydroxyl group, a compound represented by formula (1): H2N[(CH2)xNR1]yR2, and hexamethylenetetramine.
Polishing compositions and methods are provided which enable barrier polishing with tunable removal rate ratios for copper, tantalum, and TEOS. Polishing compositions comprising silica particles (greater than 12 nm), a metal corrosion inhibitor, and a phosphate surfactant are capable of achieving Ta to TEOS selectivities of greater than 1 and low Co removal rates (e.g., less than 200 Å/min), allowing for good topography correction (e.g., reduced dishing).
MITSUBISHI HEAVY INDUSTRIES AERO ENGINES, LTD. (Japon)
FUJIMI INCORPORATED (Japon)
TOCALO CO., LTD. (Japon)
Inventeur(s)
Kinouchi, Arata
Masuda, Takaya
Habu, Yoichiro
Takagi, Kaito
Noda, Kazuo
Abrégé
A method for applying a thermal barrier coating according to an embodiment, includes: a step of forming a top coat layer on a bond coat layer formed on a heat-resistant alloy base material of an object. The step of forming the top coat layer includes forming the top coat layer by thermal-spraying a suspension, which contains ceramic powder, with atmospheric pressure plasma spraying, while cooling a portion of a plasma flame by supplying water as a cooling fluid to a periphery of the plasma flame at a supply rate of not less than 25 ml/min and not greater than 100 ml/min.
Means for effectively removing hafnium oxide can be provided. A polishing composition contains (a) an anionic abrasive, (b) a nitrogen-containing additive, and (c) a dispersing medium, wherein the pH of the polishing composition is 2 or more and less than 5, and the (b) nitrogen-containing additive contains at least one selected from the group consisting of the following (i), the following (ii), and the following (iii); (i) a compound selected from the group consisting of a guanidine compound having a specific structure, an amidine compound having a specific structure, and salts thereof; (ii) a cyclic amino acid; and (iii) a sulfonic acid compound having an amino group.
The present disclosure relates to chemical mechanical polishing (CMP) compositions comprising a first and second molybdenum static etching rate suppressor, an anionic silica abrasive, and an oxidizer.
The present disclosure relates to chemical mechanical polishing (CMP) compositions comprising a first and second molybdenum static etching rate suppressor, an anionic silica abrasive, and an oxidizer.
The first molybdenum static etching rate suppressor is a phosphate-containing polyethylene surfactant or a sulfate-containing polyethylene surfactant, and the second molybdenum static etching rate suppressor is a basic amino acid, and this combination provides advantageous properties such as high molybdenum removal rate while also exhibiting a low molybdenum static etching rate, thus providing compositions well suited for polishing a molybdenum surface.
The present disclosure relates to a polishing compositions that increase a silicon oxide removal rate without impairing the stability of an abrasive. The present disclosure relates to a polishing composition comprising an abrasive, a base compound, a silicon oxide removal rate controller, and an oxidizer, wherein the abrasive is a silica abrasive with a primary particle size ranging from about 30 nm to about 70 nm and a secondary particle size ranging from about 50 nm to about 130 nm; the base compound is an inorganic base; the silicon oxide removal rate controller is a zwitterion; and the oxidizer is a peroxide.
The present technology generally relates to compositions and methods for polishing surfaces comprising a metal and a dielectric film material. Embodiments include methods for polishing a surface comprising W, TEOS/SiO2 and SiN, comprising applying a polishing slurry comprising an abrasive, a SiN polishing rate enhancer, and an anionic surfactant, and methods of buffering a metal oxide salt in a CMP slurry to obtain an increased robustness against TEOS removal comprising polishing a surface comprising a metal and TEOS by applying a polishing slurry comprising an anionic modified colloidal silica abrasive and an anionic surfactant.
Provided is a polishing composition that allows carbon-added silicon oxide (SiOC) to be polished at a higher polishing speed than the polishing speed of silicon nitride (i.e., the selection ratio of SiOC/silicon nitride is high).
Provided is a polishing composition that allows carbon-added silicon oxide (SiOC) to be polished at a higher polishing speed than the polishing speed of silicon nitride (i.e., the selection ratio of SiOC/silicon nitride is high).
A polishing composition containing spinous silica particles and a dispersing medium, in which the pH is less than 5.
Provided is a polishing composition that can improve the surface quality of a surface to be polished after polishing while achieving an excellent polishing removal rate for an object to be polished. The polishing composition to be provided contains sodium permanganate as an oxidant. The polishing composition contains or does not contain an abrasive A with a Mohs hardness of less than 8 is contained as an abrasive. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.
A polishing composition that can achieve an excellent polishing removal rate for an object to be polished is provided. The polishing composition used for polishing the object to be polished is provided. The polishing composition contains water, and sodium permanganate as an oxidant. In some preferred embodiments, the polishing composition further contains a metal salt selected from salts each of which has a cation containing a metal belonging to Groups 3 to 16 in the periodic table, and an anion. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.
There is provided a sliding apparatus having low frictional resistance with a snow surface or an ice surface and excellent sliding properties. A sliding apparatus for sliding on a sliding object (snow surface or ice surface) has a sliding surface (1) contacting the sliding object. The sliding surface (1) is divided into a plurality of regions (1A, 1B, 1C) different in the surface arithmetic mean roughness Ra, and the plurality of regions (1A, 1B, 1C) is arranged in order along the longitudinal direction. Among the plurality of regions (1A, 1B, 1C), the surface arithmetic mean roughness Ra of a front region (1A) which is a region first contacting the sliding object in sliding is smaller than the surface arithmetic mean roughness Ra of the rear region (1B) positioned rearward in the sliding direction with respect to the front region (1A).
A63C 5/12 - Skis ou surfs des neiges leur fabricationSélection de matériaux particuliers
B24B 29/02 - Machines ou dispositifs pour polir des surfaces de pièces au moyen d'outils en matière souple ou flexible avec ou sans application de produits de polissage solides ou liquides conçus pour pièces particulières
44.
POLISHING COMPOSITION, POLISHING COMPOSITION PRODUCTION METHOD, POLISHING METHOD, AND SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD
There are provided a polishing composition capable of increasing the polishing removal rate of silicon nitride, a polishing composition production method, a polishing method, and a semiconductor substrate production method. The polishing composition contains abrasives having a zeta potential of −5 mV or less and a cationic surfactant.
There are provided a polishing composition less likely to leave cloudiness on the surface of an object to be polished even when there is a time interval before wiping-off, a method for producing the same, and a polishing method.
There are provided a polishing composition less likely to leave cloudiness on the surface of an object to be polished even when there is a time interval before wiping-off, a method for producing the same, and a polishing method.
A polishing composition contains abrasives, a hydrophobic dispersion medium, water, and a surfactant. The surfactant contains polyoxyethylene alkyl ether represented by Formula (i) RO—(C2H4O)n—H. In Formula (i), R is a branched-chain alkyl group having a number of carbon atoms of 12 or more and 20 or less, and n represents the average number of added moles of oxyethylene and is 3 or more and 50 or less.
The present invention provides a means capable of polishing a Low-k material and silicon nitride at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate. The present invention provides a means capable of making a selection ratio of a polishing removal rate of silicon nitride to a polishing removal rate of silicon oxide appropriate while polishing silicon oxide and silicon nitride at a high polishing removal rate and capable of reducing defects on a silicon oxide surface after polishing.
The present invention provides a means capable of polishing a Low-k material and silicon nitride at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate. The present invention provides a means capable of making a selection ratio of a polishing removal rate of silicon nitride to a polishing removal rate of silicon oxide appropriate while polishing silicon oxide and silicon nitride at a high polishing removal rate and capable of reducing defects on a silicon oxide surface after polishing.
The present invention is a polishing composition containing abrasive grains and an alkylamine compound having at least one linear or branched alkyl group having 2 or more and 15 or less carbon atoms, in which a pH is less than 7, and a zeta potential of the abrasive grains in the polishing composition is negative.
Provided is a means for allowing residues remaining on the surface of a polished object to be further reduced. Provided is a composition for surface treatment containing components (A) to (C) below and having pH of more than 7.0: the component (A): a piperazine-based compound represented by a formula (a) below and having two or more amino groups having pKa larger than the pH of the composition for surface treatment, the component (B): an anionic polymer, and the component (C): a buffer represented by a formula: A-COO—NH4+ (A is an alkyl group having 1 or more and 10 or less carbon atoms or a phenyl group).
Provided is a means for allowing residues remaining on the surface of a polished object to be further reduced. Provided is a composition for surface treatment containing components (A) to (C) below and having pH of more than 7.0: the component (A): a piperazine-based compound represented by a formula (a) below and having two or more amino groups having pKa larger than the pH of the composition for surface treatment, the component (B): an anionic polymer, and the component (C): a buffer represented by a formula: A-COO—NH4+ (A is an alkyl group having 1 or more and 10 or less carbon atoms or a phenyl group).
To provide a polishing composition that can polish silicon nitride film at a high polishing removal rate and suppress the polishing removal rate for polycrystalline silicon film.
To provide a polishing composition that can polish silicon nitride film at a high polishing removal rate and suppress the polishing removal rate for polycrystalline silicon film.
A polishing composition containing abrasive grains having a negative zeta potential in the polishing composition, and a polyalkylene oxide compound represented by formula (1); and having a pH of less than 7.
The present invention provides a means capable of polishing a Low-k material and silicon nitride each at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate.
The present invention provides a means capable of polishing a Low-k material and silicon nitride each at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate.
The present invention is a polishing composition containing abrasive grains and a quaternary phosphonium salt, in which a pH is less than 7.0, and a zeta potential of the abrasive grains in the polishing composition is −10 mV or less.
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing silicon oxynitride (SiON) surfaces. In particular, the CMP composition includes an abrasive, an additive, and water, combined in specified amounts to provide a composition with advantageous properties such as high SiON removal rates even upon dilution of the composition with a diluent.
Molybdenum polishing compositions and methods according to the present disclosure include abrasive particles, a first and a second oxidizers, and a first and a second molybdenum static etch rate suppressors, wherein the pH of the polishing composition is from 4 to 9. Compositions according to the present disclosure are effective to efficiently polish molybdenum at a high removal rate, which achieving a low molybdenum static etch rate, thereby obtaining a high Mo RR/SER ratio. Compositions and methods according to the present disclosure thus result in improved molybdenum polishing processes and higher-quality molybdenum surfaces than are achieved by conventional polishing compositions.
A silica sol which does not gelate, has a high purity, and contains a high concentration of silica particles is provided. A silica sol containing silica particles and water, wherein a product of an average primary particle size of the silica particles and an average circularity of the silica particles is 15.0 or more and 31.2 or less, a concentration of the silica particles is 20 mass % or more, a total organic carbon amount per silica particle is less than 10 mass ppm, when the concentration of the silica particles is 20 mass %, a viscosity at 25° C. is 300 mPa·s or less, and a concentration of a metal impurity is less than 1 mass ppm.
The present invention provides a method capable of increasing a ratio (selection ratio) of a polishing removal rate of silicon oxide or silicon nitride to a polishing removal rate of polysilicon and further reducing residues (preferably organic residues) on a surface of a polished object to be polished. The present invention is a polishing composition containing colloidal silica, an inorganic salt containing no halogen, and a water-soluble polymer, in which a product of a valence number (unit: valency) of an anion of the inorganic salt and a concentration (unit: mM) of the anion in the polishing composition is 57 or more.
The present invention provides a polishing composition which is capable of rapidly removing scratches and exhibits a high polishing rate without deteriorating surface quality. One aspect of the present invention relates to the polishing composition contains abrasive grains having a Mohs hardness of 8 or more, and a dispersing medium, wherein the abrasive grains have two or more local maximum points at different particle sizes in a volume-based particle size distribution measured by a porous electrical resistance method.
There is provided a method for producing a resin member used in a production process of electronic devices capable of suppressing the adhesion of adhering substances to the surface over a long period of term. The method for producing a resin member used in a production process of electronic devices includes: a processing step of applying abrasive processing to the surface of a raw member to set a surface roughness Ra to 100 nm or less and a contact angle of pure water with respect to the surface to 70° or more and less than 110°.
B24B 55/00 - Dispositifs de sécurité pour machines de meulage ou de polissageAccessoires adaptés aux machines à meuler ou à polir pour maintenir les outils ou les parties de machines en bon état de marche
B24B 7/22 - Machines ou dispositifs pour meuler les surfaces planes des pièces, y compris ceux pour le polissage des surfaces planes en verreAccessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière des objets non métalliques à meuler pour meuler de la matière inorganique, p. ex. de la pierre, des céramiques, de la porcelaine
Provided is a polishing pad having a high following performance even when a surface to be polished is a curved face. A polishing pad (1) in an embodiment of the present invention includes a polishing layer (2) having a polishing face (21) and a support layer (3) that is formed from a material softer than the polishing layer (2) and is fixed to a face (22) opposite to the polishing face (21) of the polishing layer (2). The support layer (3) has a hardness of not less than 30 and less than 70 in terms of F hardness.
B24B 37/22 - Tampons de rodage pour travailler les surfaces planes caractérisés par une structure multicouche
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
B24B 37/26 - Tampons de rodage pour travailler les surfaces planes caractérisés par la forme ou le profil de la surface du tampon de rodage, p. ex. rainurée
B24B 57/02 - Dispositifs pour l'alimentation, l'application, le triage ou la récupération de produits de meulage, polissage ou rodage pour l'alimentation en produits de meulage, polissage ou rodage à l'état fluide, vaporisés, pulvérisés ou liquéfiés
57.
POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
An object of the present invention is to provide means that can polish both silicon nitride and silicon oxide at a high polishing removal rate.
An object of the present invention is to provide means that can polish both silicon nitride and silicon oxide at a high polishing removal rate.
The present invention provides a polishing composition including abrasive grains and an acidic compound. The abrasive grains are inorganic particles having an organic acid immobilized on a surface thereof. In a particle size distribution of the abrasive grains measured by a dynamic light scattering method, D90/D10 is 2.2 or more and D50 is 70 nm or more, where D10 is a particle diameter when a cumulative particle mass from a fine particle side reaches 10% of the total particle mass, D50 is a particle diameter when the cumulative particle mass from the fine particle side reaches 50% of the total particle mass, and D90 is a particle diameter when the cumulative particle mass from the fine particle side reaches 90% of the total particle mass.
A method for manufacturing a silica sol according to an embodiment of the present invention includes: a step of preparing a silica sol reaction liquid by hydrolyzing and polycondensing an alkoxysilane or a condensate thereof using an alkali catalyst in a solvent; and at least one of a step of concentrating the silica sol reaction liquid by an ultrasonic atomization separation method and a step of replacing the silica sol reaction liquid with water by the ultrasonic atomization separation method.
To provide a polishing composition that can polish titanium nitride film at a higher polishing removal rate with respect to the polishing removal rate for silicon oxide film (specifically, a high selection ratio expressed removal rate titanium as polishing for nitride film/polishing removal rate for silicon oxide film) and that has high dispersion stability.
To provide a polishing composition that can polish titanium nitride film at a higher polishing removal rate with respect to the polishing removal rate for silicon oxide film (specifically, a high selection ratio expressed removal rate titanium as polishing for nitride film/polishing removal rate for silicon oxide film) and that has high dispersion stability.
A polishing composition containing abrasive grains, an acid, a surfactant, and an oxidizing agent, wherein the abrasive grains have a positive zeta potential, the acid is an inorganic acid, the surfactant contains a compound having a polypropylene glycol structure, the oxidizing agent is hydrogen peroxide, and the pH is 2 or more and 4 or less.
The powder material for additive manufacturing disclosed herein includes tungsten carbide (WC), cobalt (Co), and a carbon additive including carbon (C) as a main constituent element, and the value of a carbon content A (% by mass), which is represented by the following formula: [(mass of C derived from WC)+(mass of C derived from carbon additive)]/(mass of WC)×100, satisfies the condition of 6.4≤A≤7.2.
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 1/12 - Poudres métalliques contenant des particules non métalliques
The present invention enables to provide plate-like titanium pyrophosphate, having both high uniformity in size and specific particle shape, which is expected to be highly useful. The present invention relates to plate-like titanium pyrophosphate having an aspect ratio of 5 or more expressed as a ratio of the in-plane length DPL50 of primary particles, at which the cumulative frequency from the smaller particle size side is 50% in a volume-based cumulative particle size distribution, to the thickness DPT50 of primary particles, at which the cumulative frequency from the smaller particle size side is 50% in a volume-based cumulative particle size distribution (the in-plane length DPL50 of primary particles/the thickness DPT50 of primary particles), wherein the relationship among the particle size D10 of secondary particles, at which the cumulative frequency from the smaller particle size side is 10% in a volume-based cumulative particle size distribution, the particle size D50 of secondary particles, at which the cumulative frequency from the smaller particle size side is 50% in a volume-based cumulative particle size distribution, and the particle size D90 of secondary particles, at which the cumulative frequency from the smaller particle size side is 90% in a volume-based cumulative particle size distribution, satisfies a specific relationship; and a method for producing the same.
Provided is a polishing composition with excellent machining capacity, and good cleaning property after polishing.
Provided is a polishing composition with excellent machining capacity, and good cleaning property after polishing.
A polishing composition containing abrasive grains, water, and a hydrophobic dispersing medium, wherein the hydrophobic dispersing medium contains at least one selected from the group consisting of normal paraffin hydrocarbons, isoparaffin hydrocarbons, naphthenic hydrocarbons, and terpene hydrocarbons, and has a flash point of 30° C. or more and 100° C. or less, or a vapor pressure at 20° C. of 0.004 kPa or more and 2 kPa or less.
Provided is a powder having a high transmittance that is suitable as a filler for optical materials and resins for which transparency is demanded. The powder of the present invention includes crystalline plate-shaped titanium phosphate particles, in which a ratio of particles having a particle diameter of 0.52 μm or more to 0.87 μm or less is 7.0% by mass or less.
Provided is a means for sufficiently removing residues remaining on the surface of a polished object and reducing the surface roughness of the polished object. The present invention relates to a surface treatment composition containing components (A) to (C), and having pH of more than 7.0:
the component (A): a cyclic amine compound having a nitrogen-containing non-aromatic heterocyclic ring,
the component (B): a nonionic polymer,
the component (C): a buffer represented by a formula: A-COO−NH4+ wherein A is an alkyl group having from 1 to 10 carbon atoms, or a phenyl group.
Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing. Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.
Provided is a polishing composition that can reduce increase in temperature of a polishing pad during polishing. The polishing composition provided by the present invention contains water, oxidant A selected from compounds other than peroxide, a first metal salt selected from alkaline-earth metal salts, and a second metal salt selected from salts each of which has a cation of a metal belonging to groups 3 to 16 in the periodic table, and an anion.
Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.
A polishing composition capable of increasing a polishing selectivity ratio of SiOC to silicon nitride, a production method of the polishing composition, a polishing method, and a manufacturing method of a semiconductor substrate are provided.
A polishing composition capable of increasing a polishing selectivity ratio of SiOC to silicon nitride, a production method of the polishing composition, a polishing method, and a manufacturing method of a semiconductor substrate are provided.
The polishing composition contains abrasives having a zeta potential of −5 mV or less, a cationic surfactant, a phosphonic acid-based chelating agent, and a cationic compound having a molecular weight of 300 or less.
Provided is a polishing composition that enables polishing a resin object to be polished at a high polishing removal rate and enables polishing the surface of a resin object to be polished into a flat and smooth surface. The polishing composition includes abrasives, a surfactant, and water, and the surfactant includes an acetylene compound having a carbon-carbon triple bond and represented by Chemical Formula (1). In Chemical Formula (1), R1, R2, R3, and R4 are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 or more and 20 or less carbon atoms; R5 and R6 are each independently a substituted or unsubstituted alkylene group having 1 or more and 5 or less carbon atoms; m is an integer of 1 or more; n is an integer of 0 or more; and m+n is 50 or less. The polishing composition is used to polish a resin object to be polished.
Provided is a polishing composition that enables polishing a resin object to be polished at a high polishing removal rate and enables polishing the surface of a resin object to be polished into a flat and smooth surface. The polishing composition includes abrasives, a surfactant, and water, and the surfactant includes an acetylene compound having a carbon-carbon triple bond and represented by Chemical Formula (1). In Chemical Formula (1), R1, R2, R3, and R4 are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 or more and 20 or less carbon atoms; R5 and R6 are each independently a substituted or unsubstituted alkylene group having 1 or more and 5 or less carbon atoms; m is an integer of 1 or more; n is an integer of 0 or more; and m+n is 50 or less. The polishing composition is used to polish a resin object to be polished.
The present invention is to provide a means for reducing surface roughness (Ra) while maintaining a high polishing rate in polishing of an object to be polished containing a resin and a filler. A polishing composition of the present invention comprises alumina particles, colloidal silica particles, and a dispersing medium for use in polishing an object to be polished containing a resin and a filler, in which the alumina particles have an average particle size of less than 2.8 μm, and the colloidal silica particles have an average particle size less than the average particle size of the alumina particles.
Provided is a soft focus filler excellent in both transmittance and haze. The soft focus filler of the present invention includes a powder including plate-shaped crystal particles of titanium phosphate.
Provided are a polishing composition, a polishing method, and a method for manufacturing a substrate.
2. The silanol group density is calculated and determined based on the specific surface area measured by the BET method and the amount of silanol groups measured by titration. The pH adjusting agent is used to adjust the pH of the polishing composition to a range of 1.5 or more and 4.5 or less. The additive molecule has a structure represented by Formula (I).
2, n, m, p, q, and r are as defined in the specification.)
There is provided a thermal spray coating which has excellent plasma erosion resistance, which protects members of a plasma etching device from plasma erosion over a long period of term, and which can contribute to the stable production of devices and a longer life of members. The thermal spray material which is one aspect of this invention contains a composite compound containing a rare earth fluoride in the proportion of 40 mol % or more and 80 mol % or less, a magnesium fluoride in the proportion of 10 mol % or more and 40 mol % or less, and a calcium fluoride in the proportion of 0 mol % or more and 40 mol % or less.
C23C 4/04 - Revêtement par pulvérisation du matériau de revêtement à l'état fondu, p. ex. par pulvérisation à l'aide d'une flamme, d'un plasma ou d'une décharge électrique caractérisé par le matériau de revêtement
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
76.
POLISHING COMPOSITION, POLISHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
Provided is a polishing composition capable of polishing a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more at a high polishing speed while reducing surface defects due to polishing. Provided is a polishing composition for use in polishing an object to be polished having a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more, the polishing composition containing a cationically modified silica, a trialkylamine oxide, and an oxidizing agent, wherein the content of the trialkylamine oxide is 3 mass ppm or more and 40 mass ppm or less with respect to the total mass of the polishing composition, and the pH is less than 5.
Provided is a polishing composition in which a polishing speed of silicon germanium is sufficiently high and a selection ratio of the polishing speed of silicon germanium is sufficiently high. A polishing composition includes: abrasive grains; an inorganic salt; and an oxidizing agent, in which the number of silanol groups per unit surface area of the abrasive grains is more than 0/nm2 and 2.0/nm2 or less, and a pH of the polishing composition is 6.0 or more.
A titanium phosphate powder containing plate-like particles with a reduced content ratio of byproducts other than the plate-like particles, and exhibiting crystallinity of titanium phosphate represented by a chemical formula Ti(HPO4)2·nH2O (0≤n≤1) is provided in the present disclosure. The present disclosure relates to a method for producing a titanium phosphate powder exhibiting crystallinity of titanium phosphate represented by a chemical formula Ti(HPO4)2·nH2O (0≤n≤1), and containing plate-like particles, the method comprising putting an acidic raw material aqueous solution containing phosphorus and titanium in a sealed vessel, and storing the sealed vessel containing the raw material aqueous solution for a period of 2 hours or more, with the ambient temperature of the sealed vessel maintained under a constant temperature condition within a range of 40° C. or more and less than 100° C., wherein during the storage, the raw material aqueous solution is not stirred, or during the storage, the raw material aqueous solution is stirred, and in the case where the raw material aqueous solution is stirred during the storage, a swirl flow rate in stirring the raw material aqueous solution is within a range of more than 0 m/s and 0.30 m/s or less.
The present invention is to provide a means for reducing residual abrasive grains on a surface of an object to be polished after polishing. The polishing composition of the present invention comprises abrasive grains and a dispersing medium, wherein the abrasive grains are silica particles having an average particle size (D50) of more than 1.0 μm and a circularity of primary particles of 0.90 or more.
Provided is a white pigment for cosmetics, and the white pigment has a higher function as a base pigment than that of titanium oxide. A white pigment for cosmetics of the present invention includes a titanium phosphate powder having a whiteness of 92.91 or more as determined in accordance with JIS Z 8715.
Provided is a powder having excellent hiding power, such that the powder can be used in place of titanium dioxide as a white pigment in a cosmetic. The powder of the present invention includes plate-shaped crystal particles, the volume D50% diameter thereof is 0.7 μm or more and 8.0 μm or less, and a coefficient of variation (CV value) of a primary particle diameter is 1.0 or less.
Provided is a method that enables good cleaning of a polished substrate formed of a high-hardness material. Provided is a method of polishing and cleaning a substrate formed of a material having a Vickers hardness of 1500 Hv or more. The method includes: polishing a substrate to be polished using a polishing composition; and cleaning the polished substrate using a cleaner. The polishing composition contains a polishing auxiliary. Furthermore, the cleaner contains a surfactant.
METHOD FOR PRODUCING WETTING AGENT FOR SEMICONDUCTOR, CONTAINING POLYVINYL ALCOHOL COMPOSITION, POLISHING COMPOSITION CONTAINING WETTING AGENT FOR SEMICONDUCTOR, OBTAINED BY THE PRODUCTION METHOD, AND METHOD FOR PRODUCING POLISHING COMPOSITION
To provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregated product, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition.
To provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregated product, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition.
A method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition, wherein the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into the inside of any one solution of a first liquid containing polyvinyl alcohol and water and a second liquid other than the first liquid, the other liquid of the first liquid and the second liquid.
C08J 3/07 - Production de solutions, dispersions, latex ou gel par d'autres procédés que ceux utilisant les techniques de polymérisation en solution, en émulsion ou en suspension dans un milieux aqueux à partir de solutions de polymères
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
84.
ABSORPTION METHOD AND MESOPOROUS ALUMINA USED FOR THE SAME
Provided is an absorption method of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table. The method includes: preparing mesoporous alumina that satisfies at least one of the following items:
(1) a surface hydroxyl content is 3.5 mmol/g or more;
(2) a low-temperature CO2 desorption amount in CO2 thermal desorption amount spectrometry is 5 µmol/g or more; and
(3) a low-temperature NH3 desorption amount in NH3 thermal desorption amount spectrometry is 25 µmol/g or more; and
bringing a liquid containing an absorption target element in contact with the mesoporous alumina to absorb the absorption target element in the mesoporous alumina. The absorption target element is at least one type selected from the group consisting of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table.
B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
B01J 20/08 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant des oxydes ou des hydroxydes des métaux non prévus dans le groupe contenant de l'oxyde ou de l'hydroxyde d'aluminiumCompositions absorbantes ou adsorbantes solides ou compositions facilitant la filtrationAbsorbants ou adsorbants pour la chromatographieProcédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant des oxydes ou des hydroxydes des métaux non prévus dans le groupe contenant de la bauxite
The silicon carbide powder is a powder of silicon carbide having an α-type crystal system, where the number of small corner portions among corner portions on a surface of a primary particle of silicon carbide constituting the powder of silicon carbide is 2.5 or less per one primary particle. The small corner portion is a corner portion, among corner portions present in a contour of the primary particle in a projection image of the primary particle, where twice a curvature radius of the corner portion is 1/5 or less of a Heywood diameter of the projection image of the primary particle.
Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.
Provided is a means capable of sufficiently removing residues on a surface of an object to be polished while polishing the object to be polished at a moderate speed.
Provided is a means capable of sufficiently removing residues on a surface of an object to be polished while polishing the object to be polished at a moderate speed.
Provided is a polishing composition containing: anionically-modified colloidal silica; a dispersing medium; an anionic water-soluble polymer which is a copolymer including a structural unit having a sulfonic acid group or a salt group thereof and a structural unit having a carboxy group or a salt group thereof; a polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; a nitrogen-free non-ionic polymer other than the polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; and a nitrogen-containing non-ionic polymer.
C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
B24B 7/22 - Machines ou dispositifs pour meuler les surfaces planes des pièces, y compris ceux pour le polissage des surfaces planes en verreAccessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière des objets non métalliques à meuler pour meuler de la matière inorganique, p. ex. de la pierre, des céramiques, de la porcelaine
The present invention provides a means capable of further improving stability and washability under acidic conditions. The present invention is sulfonic acid-modified colloidal silica having an amount of sulfonic acid groups per 1 g of particles of 1.5 μmol/g or more and 13.0 μmol/g or less.
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing a component (A) and a component (B) and having pH of 8.0 or more:
component (A): a polymer having a constituent unit having a quaternary nitrogen-containing onium salt or a constituent unit of a structure (X) below,
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing a component (A) and a component (B) and having pH of 8.0 or more:
component (A): a polymer having a constituent unit having a quaternary nitrogen-containing onium salt or a constituent unit of a structure (X) below,
component (B): a buffer represented by a formula: R—COO—NH4+.
The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.
Means capable of sufficiently removing residues remaining on a surface of a polished object containing silicon nitride and at least one selected from the group consisting of silicon oxide and polysilicon is provided. A composition for surface treatment, comprising: a nitrogen-free nonionic polymer, a nitrogen-containing nonionic polymer, and an anionic polymer, wherein the nitrogen-free nonionic polymer has a weight-average molecular weight of less than 100,000, the ratio of a weight-average molecular weight of the nitrogen-containing nonionic polymer to the weight-average molecular weight of the nitrogen-free nonionic polymer (nitrogen-containing nonionic polymer/nitrogen-free nonionic polymer) is 0.1 or more and 10 or less, and the composition for surface treatment has a pH of less than 7.0.
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces. In particular, the CMP composition includes an abrasive, a molybdenum (Mo) etching inhibitor, an oxidizer, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo:TEOS removal rate selectivity and/or high Mo:SiN removal rate selectivity.
Provided is a white pigment for cosmetics capable of giving a cosmetic having an excellent performance smoothly applicable onto the skin. A white pigment for cosmetics of the present invention includes a titanium phosphate powder, the titanium phosphate powder includes crystal particles of titanium phosphate, and the titanium phosphate powder has an average friction coefficient (MIU) of less than 1.45.
To provide means for improving a ratio of a polishing speed of SiOC to a polishing speed of SiN. There is provided a polishing composition containing: abrasive grains containing at least one kind of zirconia particles; a selection ratio improver containing at least one kind of a salt composed of a monovalent anion and a monovalent or higher valent cation and improving a ratio of a polishing speed of SiOC to a polishing speed of SiN; and a pH adjusting agent containing at least one kind of an acid, in which a pH is more than 3.0 and less than 7.0, and a zeta potential of the abrasive grain is a positive value.
Provided is a polishing method that can efficiently achieve a surface of a super-hard material from which latent defects are precisely eliminated. The polishing method provided by the present invention is used for polishing a substrate made of a material having a Vickers hardness of 1500 Hv or higher. The polishing method includes: a step of carrying out preliminary polishing on the substrate using a preliminary polishing composition; and a step of carrying out final polishing on the preliminarily polished substrate using a final polishing composition. Here, a surface roughness RaPRE of the preliminarily polished substrate measured by an AFM is 0.1 nm or less, and a polishing removal in the final polishing step is 0.3 µm or more.
The present invention provides means capable of imparting high temporal stability to a hardening aid solution which serves as a raw material and capable of imparting high strength and high quality stability to a hardened body of the self-hardening material, in the hardened body of the self-hardening material that contains a ceramic powder containing Si element at least on the surface thereof. The present invention relates to a hardening aid solution containing Si element, an alkali, and a dispersing medium, wherein the dispersing medium contains water; a dissolution concentration of the Si element is 20000 mass ppm or more; the number of moles of the alkali present in 1 kg of the dispersing medium is 2 mol/kg or more; an absolute value of an amount of change in a dissolution concentration of Si element in a solution obtained by diluting the hardening aid solution by 2 times based on the mass using an aqueous KOH solution having a concentration of 3 mol/L is 2000 mass ppm or less, between before and after a heat dissolution test including heating the solution at a solution temperature of 80° C. for 5 hours, and then allowing the solution to stand in an ambient environment at 25° C. for 1 hour; and the hardening aid solution is used for hardening a powder containing a ceramic powder containing Si element at least on the surface thereof.
C04B 35/626 - Préparation ou traitement des poudres individuellement ou par fournées
C04B 35/14 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base de silice
Provided is a polishing composition that contains a cellulose derivative and can improve the polishing removability and enhance the wettability of a polished surface of a silicon wafer. The polishing composition contains an abrasive, a cellulose derivative, a basic compound, and water. Here, the polishing composition has a zeta potential of -24.0 mV or more.
Provided is a method for producing a porous metal oxide. The method includes: preparing a slurry by mixing a metal source, a pore forming agent and an aqueous solvent; drying the slurry to obtain a metal oxide precursor; and sintering the metal oxide precursor to generate a porous metal oxide. The metal source is an organometallic compound or hydrolyzate thereof containing a metal that makes up the porous metal oxide; the pore forming agent is an inorganic compound that generates a gas by decomposing at a temperature equal to or lower than a temperature at which the metal oxide precursor is sintered; and the slurry is prepared using 50 parts by weight or more of the pore forming agent with respect to 100 parts by weight of the metal source.
C01F 7/36 - Préparation de l'hydroxyde d'aluminium par précipitation à partir de solutions contenant des sels d'aluminium à partir de sels organiques d'aluminium
Provided is a polishing composition that can achieve wettability enhancement and haze reduction of a polished surface of a silicon wafer. The polishing composition for a silicon wafer contains an abrasive, a cellulose derivative, a surfactant, a basic compound, and water. Here, the cellulose derivative has a weight average molecular weight of more than 120×104, and the surfactant has a molecular weight of less than 4000.
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