The present invention comprises: a transformer 7 that is provided with a primary winding La and a secondary winding Lb; a pulse-generating circuit 9 that is connected to the primary winding La and has at least one switching element SW1; a consumption circuit 13 that is connected in parallel to the pulse-generating circuit 9, the consumption circuit 13 having a resistor R1 that consumes electric vibration energy Er that is generated in the secondary winding Lb and transmitted to the primary winding La, and a switching element SW5 that is connected in series to the resistor R1; a switch control unit 21 that switches the switching element SW1 and the switching element SW5 on or off; and a consumption time control unit 23 that controls the timing and time period in which the switching element SW5 is switched on.
H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
H02M 9/06 - Transformation d'une puissance d'entrée en courant continu ou courant alternatif en une puissance de sortie de choc avec une puissance d'entrée en courant alternatif
2.
PLASMA GENERATION DEVICE AND PLASMA TREATMENT DEVICE
This plasma generation device comprises: an outer conductor (29) that is a conductive waveguide having an opening (34) on one end side; a first dielectric body (31) that extends along the principal axis of the outer conductor (29) within the outer conductor (29), is connected with a microwave supply cable (5) for supplying a microwave, and propagates the supplied microwave to the one end side; and a second dielectric body (33) that is provided so as to block the opening (34) and generates plasma using the microwave propagated by the first dielectric body (31).
This microwave heating device comprises: a waveguide tube 31 configured so as to have openings 31A along a microwave transmission direction; and a heater 32 provided on the outside of the waveguide tube 31, adjacent to the openings 31A of the waveguide tube 31. An insulating sheet 33 is mounted on the heater 32, passes through the openings 31A of the waveguide tube 31, and is provided from the heater 32 to the inside of the waveguide tube 31. An object to be heated is placed on the insulating sheet 33, and after the insulating sheet 33 heats the object to be heated by heat conduction from the heater 32 to the insulating sheet 33, the object to be heated is heated by microwaves. As a result thereof, the object to be heated can be heated at a high temperature without the object to be heated being damaged by heating.
An inner wall of a chamber 4 (a cylindrical container 41 thereof) in a microwave plasma vapor-phase reaction device of the present invention (for example, a microwave plasma CVD device 1) is configured in a tapered shape such that the diameter of the bottom surface on the side opposite to a waveguide (here, a circular waveguide 3) becomes smaller than the diameter of the top surface on the waveguide (circular waveguide 3) side. Therefore, an electrical field is not formed on the narrowed bottom surface, and the position of the antinode of the electrical field can be controlled by changing the taper angle. Consequently, a strong electrical field can be generated in only one specific region (desired region) inside the chamber 4 and a plasma in which the lighting position is controllable can be formed with a simple structure.
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p. ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
C23C 16/511 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à micro-ondes
In this bonding method, auxiliary heating processing in step S3 is performed for a semiconductor chip and a frame, between which a conductive paste comprising nanoparticles of a metal or a metal oxide is interposed, under atmospheric pressure. As a result of the auxiliary heating processing, voids in interfaces between a bonding layer, comprising the adhesive, and a semiconductor chip and a frame are removed. Subsequent to the auxiliary heating processing in the step S3, plasma processing in step S4 is performed by intermittently performing plasma irradiation for the semiconductor chip and the frame under reduced pressure. As a result of the plasma processing, gaps that exist within the bonding layer, which comprises the adhesive, are removed. As a result of the auxiliary heating processing in step S3 and the plasma processing in step S4, gaps and voids are removed, and therefore, bonding capability is increased. In addition, the plasma irradiation is intermittently performed, and therefore, processing temperature for the plasma processing can be suppressed.
In this bonding method, auxiliary heating processing in step S3 is performed for a semiconductor chip and a frame, between which a conductive paste comprising nanoparticles of a metal or a metal oxide is interposed. As a result of the auxiliary heating processing, voids in interfaces between a bonding layer, comprising the adhesive, and a semiconductor chip and a frame are removed. Subsequent to the auxiliary heating processing in the step S3, plasma processing in step S4 is performed by intermittently performing plasma irradiation for the semiconductor chip and the frame under reduced pressure. As a result of the plasma processing, gaps that exist within the bonding layer, which comprises the adhesive, become uniform. As a result of the auxiliary heating processing in step S3 and the plasma processing in step S4, voids at the interfaces between the bonding layer and the processed matter are removed, and therefore, bonding capability is increased. In addition, the plasma irradiation is intermittently performed, and therefore, processing temperature for the plasma processing can be suppressed.
This joining method uses flakes formed from metal or metal oxide fine particles using mechanical stress, and in the plasma processing process of a step (S6), plasma processing is carried out on a semiconductor chip and a frame between which such flakes are interposed. The contact surface area between flakes is increased, and residual stress is applied within the flakes. Further, due to plasma processing, bonding occurs at the atomic level, and thus joining capability in the horizontal direction and the vertical direction is enhanced. In addition, compared to conventional thermal joining processing (in which plasma processing is not carried out), processing time can be reduced, and the present invention creates an effect of contributing greatly to productivity through improved processing efficiency.
B22F 7/08 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p. ex. pour former des outils à embouts rapportés avec une ou plusieurs parties non faites à partir de poudre
According to this joining method, in the heat treatment procedure of step (S3), a semiconductor chip and a frame, between which is interposed a conductive paste comprising microparticles of gold, silver, copper, or oxides thereof, are accommodated inside a chamber, and a heat treatment is performed on the semiconductor chip and frame. Separate from this heat treatment procedure, in the vacuum treatment procedure of step (S4), the semiconductor chip and frame are treated using a vacuum inside the chamber in which are accommodated the semiconductor chip and frame. In the plasma treatment procedure of step (S6), a plasma treatment is performed on the semiconductor chip and frame after the vacuum treatment procedure. By combining the vacuum treatment procedure and the plasma treatment procedure, joining capability is improved whether using pressureless joining or deadweight pressure joining. Also, by combining the heat treatment procedure, the vacuum treatment procedure, and the plasma treatment procedure, the heating time and sintering time can be shortened, and the treatment efficiency is improved.
A chamber (1) is configured to be narrower than the width (W1) of a transfer sheet (S) in a direction (F) orthogonal to the direction of feeding a base material (transfer sheet) (S). In the chamber (1), the transfer sheet (S) is fed in stages for each prescribed distance while an annular O-ring (4) with a round cross-section is interposed between the coated surface of the transfer sheet (S) and the surface of the chamber (1) facing the transfer sheet (S). The transfer sheet (S) is subjected to plasma processing while the inside of the chamber (1) is being depressurized. As a result, since the transfer sheet (S) is inevitably interposed where the O-ring is interposed,, at all the locations where the O-ring is interposed, not only the O-ring (4) but also the transfer sheet (S) itself shuts off the atmosphere. Thereby, a device for pattern forming (chamber 1) may be miniaturized while preventing thermal deformation and heat-induced damage and a fine metal particle sintered pattern can be efficiently formed onto an object to be processed (work).
H05K 3/20 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché par apposition d'un parcours conducteur préfabriqué
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
A chamber (1) is formed narrower than a width (w1) of an article to be processed (workpiece) (W) in a direction orthogonal to a feed direction (F) for that workpiece (W), and an O-ring (4) is made to intervene between the surface of the workpiece (W) to be processed and the surface of the chamber (1) on the workpiece (W) side. As a result, the workpiece (W) also always intervenes at locations at which the O-ring (4) intervenes; therefore, the chamber is shielded from the atmosphere by not only the O-ring (4) but also the workpiece (W) itself at all locations in which the O-ring (4) intervenes. Therefore, rollers such as a feed means for feeding the workpiece (W) (feed roller) and a means for taking up the workpiece (W) (take-up roller) can be disposed outside of the chamber (1), and the size of the chamber (1) can be reduced. As a result of the reduction in the size of the chamber (1), the time to reach a low-level vacuum can also be shortened, and the workpiece (W) can be processed efficiently.
B01J 3/02 - Dispositifs d'alimentation ou d'évacuation appropriés
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
11.
METHOD FOR GENERATING ATMOSPHERIC PRESSURE PLASMA GAS FLOW
A method for generating a gas flow of low temperature plasma (an atmospheric pressure plasma gas flow) by glow discharge under atmospheric pressure, while suppressing temperature rise of the plasma gas. Energy of a supplied microwave (21) is concentrated on a substrate (10) for microstrip line by a resonance circuit (14), and supply gases (31, 41) for generating plasma are made to flow by arranging dielectric tubes (30, 40) in a high electric field space, thereby generating atmospheric pressure plasma gas flows (33, 44). The plasma gas flow (44) is elongated by feeding a gas in a laminar flow state to the high electric field space through the dielectric tube (40).
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