This light-emitting device is provided with: a light-emitting element; a wavelength conversion member disposed on top of the light-emitting element; and a light-transmissive member that is disposed on top of the wavelength conversion member, and has a first surface facing the wavelength conversion member and a second surface on the opposite side to the first surface. The light-transmissive member includes a first light-transmissive member having a first refractive index and having the first surface, and a second light-transmissive member having a second refractive index that is smaller than the first refractive index and having the second surface. The first light-transmissive member has a first structure part including a plurality of first protrusion parts or a plurality of first recess parts on the opposite side to the first surface, and the second light-transmissive member has a second structure part including a plurality of second protrusion parts or a plurality of second recess parts on the opposite side to the second surface. The interface between the first structure part and the second structure part includes a plurality of prism surfaces, and the arithmetic average roughness Ra of the second surface is smaller than the height of the second structure part.
Provided is a self-injection locked laser device in which environmental changes are less likely to occur and variations in the optical path length and the resonator length are reduced. The self-injection locked laser device comprises: a first base plate; a second base plate; a temperature adjusting element disposed between the first base plate and the second base plate; a semiconductor laser light source disposed on the first base plate; a reference resonator that is disposed on the first base plate, that is positioned along the optical path of laser light emitted from the semiconductor laser light source, that is provided with at least a first mirror and a second mirror, and that provides the semiconductor laser light source with optical feedback; a first cover that covers the semiconductor laser light source and the reference resonator and that contacts the first base plate; and a second cover that covers the first cover and that contacts the second base plate.
Provided is a light radiation device with which it is possible to indicate a light radiation direction. The light radiation device has an elongated shape having a longitudinal direction and comprises a light emission part and a marker member that is directly or indirectly connected to the light emission part and is radiopaque. The marker member as viewed from a first direction in a direction orthogonal to the longitudinal direction differs in at least one among shape and position from the marker member as viewed from a second direction differing from the first direction in a direction orthogonal to the longitudinal direction, and it is possible to radiate light emitted from the light emission part in a predetermined direction crossing the longitudinal direction.
Provided is a small-sized light radiation device having heat-dissipation properties and electrically-insulating properties. The light radiation device comprises: a light-emitting element that emits light having a prescribed wavelength; a support body on which the light-emitting element is mounted; an insulated wire that is electrically connected to the light-emitting element; a case that accommodates the light-emitting element, a connecting portion that connects the insulated wire and the light-emitting element, and a portion of the support body; and an insulating seal material that seals the light-emitting element, said portion of the support body, and said connecting portion, inside the case. Another portion of the support body protrudes from the seal material to the outside of the case.
H01S 5/02208 - SupportsBoîtiers caractérisés par la forme des boîtiers
A61B 18/24 - Instruments, dispositifs ou procédés chirurgicaux pour transférer des formes non mécaniques d'énergie vers le corps ou à partir de celui-ci par application de radiations électromagnétiques, p. ex. de micro-ondes en utilisant des lasers le faisceau étant dirigé le long, ou à l'intérieur d'un conduit flexible, p. ex. d'une fibre optiquePièces à main à cet effet avec un cathéter
H01S 5/0233 - Configuration de montage des puces laser
H01S 5/024 - Dispositions pour la gestion thermique
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
5.
LIGHT IRRADIATION DEVICE AND LIGHT IRRADIATION SYSTEM
This light irradiation device has an oblong shape and is for medical use, the light irradiation device including a device body, a laser light source, and a cooling liquid flow path. The device body has an oblong shape. The laser light source is provided at the distal end of the oblong device body and emits laser light. The cooling liquid flow path runs to the laser light source side of the device body, and allows a cooling liquid for cooling the laser light source to pass to the laser light source side.
A61N 5/067 - Thérapie par radiations utilisant un rayonnement lumineux utilisant un rayonnement laser
A61B 18/20 - Instruments, dispositifs ou procédés chirurgicaux pour transférer des formes non mécaniques d'énergie vers le corps ou à partir de celui-ci par application de radiations électromagnétiques, p. ex. de micro-ondes en utilisant des lasers
6.
LIGHT IRRADIATION DEVICE AND IN-VIVO LIGHT IRRADIATION ASSEMBLY USING SAME
Provided is a light irradiation device which is small and has heat dissipation and electrical insulation. The light irradiation device includes: a light-emitting element that has a first surface for emitting light having a prescribed wavelength; a support body on which the light-emitting element is mounted; a first insulating layer that covers at least a part of the light-emitting element excluding the first surface; an insulated wire electrically connected to the light-emitting element in a region excluding the first surface; and a case that seals the first surface in a first space.
H01S 5/02208 - SupportsBoîtiers caractérisés par la forme des boîtiers
A61B 18/24 - Instruments, dispositifs ou procédés chirurgicaux pour transférer des formes non mécaniques d'énergie vers le corps ou à partir de celui-ci par application de radiations électromagnétiques, p. ex. de micro-ondes en utilisant des lasers le faisceau étant dirigé le long, ou à l'intérieur d'un conduit flexible, p. ex. d'une fibre optiquePièces à main à cet effet avec un cathéter
Provided is a light irradiation device which is small and has heat dissipation and electrical insulation. The light irradiation device is provided with: a light-emitting element that emits light having a prescribed wavelength; a support body on which the light-emitting element is mounted; an insulated wire electrically connected to the light-emitting element; and an insulating layer that integrally covers the outer surface of a structure including the light-emitting element, the support body, and the insulated wire.
H01S 5/02208 - SupportsBoîtiers caractérisés par la forme des boîtiers
A61B 18/24 - Instruments, dispositifs ou procédés chirurgicaux pour transférer des formes non mécaniques d'énergie vers le corps ou à partir de celui-ci par application de radiations électromagnétiques, p. ex. de micro-ondes en utilisant des lasers le faisceau étant dirigé le long, ou à l'intérieur d'un conduit flexible, p. ex. d'une fibre optiquePièces à main à cet effet avec un cathéter
Provided is a method for manufacturing a light-emitting module in which dimensional accuracy of a lens or a light-shielding member for controlling light distribution of a light-emitting element is improved. A method for manufacturing a light-emitting module according to an embodiment comprises: a step for preparing a first intermediate member including a support member having a first surface and a second surface, a wiring layer provided on the first surface, a plurality of light-emitting elements electrically connected to the wiring layer on the first surface, and a photoresist member covering the light-emitting elements; and a step for lighting the plurality of light-emitting elements to expose a plurality of first portions of the photoresist member to form a second intermediate member. The photoresist member is exposed irradiation by light including the wavelength of light of the plurality of light-emitting elements.
The present invention realizes a small-sized light-emitting device which emits light having different polarization directions. The light-emitting device comprises: a plurality of semiconductor laser elements having light emitting peak wavelengths of a first wavelength±20 nm or less; and a plurality of reflection members including a first reflection member having a first light reflection surface and a second reflection member having a second light reflection surface and a wavelength plate which is provided on the second light reflection surface. The plurality of semiconductor laser elements include a first semiconductor laser element and a second semiconductor laser element. Light emitted from the first semiconductor laser element is reflected by the first light reflection surface of the first reflection member. Light emitted from the second semiconductor laser element is reflected by the second light reflection surface of the second reflection member. Light incident on the first light reflection surface and light incident on the second light reflection surface have the same polarization direction. Light emitted from the first reflection member and light emitted from the second reflection member have different polarization directions.
Provided is a light-emitting element configured so that, when individually controlling the light emission of a plurality of light-emitting parts, it is possible to reduce the extraction of light emitted by the light-emitting parts from regions other than a region above the light-emitting parts that emit light. This light-emitting element comprises: a semiconductor structure including an n-side semiconductor layer and a plurality of light-emitting parts, the n-side semiconductor layer having a first surface, a plurality of second surfaces positioned on the side opposite the first surface, and a third surface positioned on the side opposite the first surface, and the plurality of light-emitting parts each having an active layer and a p-side semiconductor layer disposed on the second surface, wherein the third surface is positioned between the plurality of light-emitting parts in plan view and is exposed from the active layer and the p-side semiconductor layer; an n-side electrode disposed on the third surface; and p-side electrodes disposed on each of the p-side semiconductor layers of the plurality of light-emitting parts and electrically connected to the p-side semiconductor layers. In plan view: the first surface has a first region and a second region having an arithmetic average roughness smaller than that of the first region; the first region overlaps the second surface; and the second region overlaps the third surface.
H10H 20/819 - Corps caractérisés par leur forme particulière, p. ex. substrats incurvés ou tronqués
H10H 20/82 - Surfaces rugueuses, p. ex. à l’interface entre les couches épitaxiales
H10H 20/813 - Corps ayant une pluralité de régions électroluminescentes, p. ex. LED à jonctions multiples ou dispositifs émetteurs de lumière ayant des régions photoluminescentes au sein des corps
H10H 20/814 - Corps ayant des moyens réfléchissants, p. ex. des réflecteurs de Bragg en semi-conducteurs
H10H 20/831 - Électrodes caractérisées par leur forme
11.
SUBSTRATE, LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING MODULE
The present invention realizes a substrate that can be used in common for a plurality of light-emitting devices having different configurations of light-emitting elements. Provided is a substrate comprising: an upper surface; a lower surface; a first side surface; a second side surface facing the first side surface or located on the opposite side of the first side surface; a plurality of upper wiring parts including, on the upper surface, a first upper wiring part provided on a first side surface side and a second upper wiring part provided on the first side surface side or on a second side surface side so as to be separated from the first upper wiring part; and a plurality of lower wiring parts including, on the lower surface, a first lower wiring part that is provided on the first side surface side and that is electrically connected to the first upper wiring part, a second lower wiring part that is provided on the first side surface side or on the second side surface side so as to be separated from the first lower wiring part and that is electrically connected to the second upper wiring part, and a third lower wiring part that is provided on the second side surface side so as to be separated from the first lower wiring part and that is electrically connected to the first upper wiring part.
Provided are: a light-emitting device that makes it possible to improve the light extraction efficiency from an upper surface of a light-emitting element while reducing deterioration of a light-reflective member arranged on a side surface of the light-emitting element; and a method for producing the light-emitting device. The light-emitting device comprises a substrate, a light-emitting element arranged on the substrate, and a light-reflective inorganic member that is arranged on a side surface of the light-emitting element and includes first oxide particles and an oxide layer covering the first oxide particles. The thickness of the light-reflective inorganic member is 1-100 μm. The ratio of the area of the first oxide particles to the area of the light-reflective inorganic member in a cross section perpendicular to the upper surface of the light-emitting element is 30%-50%.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
13.
LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE
The present disclosure provides a light-emitting device comprising a light reflection member with high heat dissipation. The light-emitting device according to the present disclosure includes: a light-emitting element including a semiconductor structure that has a light-emitting surface, an electrode formation surface on the opposite side of the light-emitting surface, and a side surface positioned between the light-emitting surface and the electrode formation surface, and an electrode provided on the electrode formation surface; and a light reflection member having a lower surface and covering the side surface of the semiconductor structure and the side surface of the electrode. The electrode has an exposed surface not covered by the light reflection member, and the light reflection member includes: a first light reflection part that covers a side surface of the semiconductor structure and includes an inorganic material serving as a main material, and a light reflection material having a refractive index higher than that of the inorganic material; and a second light reflection part that has a lower surface, covers at least a portion of the side surface of the electrode, includes an inorganic material, and includes or substantially does not include a light reflection material in a content smaller than that of the first light reflection part.
Provided are a vehicular light-emitting device and a vehicular lamp that emit light of high luminous flux, and that emit light in a red color that can be distinguished from amber colors even by people with color vision impairment. This vehicular light emitting device is provided with a light-emitting element, and a phosphor that emits light as excited by light emitted from the light-emitting element. The device emits light of a region where, in the CIE 1931 color-space chromaticity diagram, the following regions overlap: a region located, in the chromaticity coordinates, on the lower side of a confusion color line that passes through a confused-colors center and point No. 1a, which is one of chromaticity points that satisfy the requirements for amber colors in the ECE standards; and a region R1 that is contained in a region R that satisfies the requirements for red colors in the ECE standards and is bounded by first to fourth lines connecting point No. 1r (x=0.6450, y=0.3350), point No. 2r (x=0.6508, y=0.3350), point No. 3r (x=0.7337, y=0.2645), and point No. 4r (x=0.7210, y=0.2590).
The present invention provides a substrate and a light-emitting device excellent in heat dissipation. A substrate according to an embodiment of the present disclosure comprises a first member having a through-hole penetrating from an upper surface to a lower surface, and a second member disposed inside the through-hole. The second member includes: a first region including graphite; a second region disposed outside the first region in a top view, the second region including graphite and a thermally conductive material containing a metal and/or a ceramic, and having a volume fraction of graphite lower than that in the first region; and a third region disposed outside the second region in a top view, the third region including a thermally conductive material containing a metal and/or a ceramic, and having a volume fraction of the thermally conductive material higher than that in the second region. A light-emitting device according to an embodiment of the present disclosure comprises the substrate and a light source unit disposed above the substrate.
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
This laser welding method comprises: a first step for setting, for example, a processing target containing a metal member and a plurality of metal foils having been laminated, in a state in which a surface of the processing target is irradiated with laser light from a laser welding device, on a support device; and a second step for joining the metal member and the plurality of metal foils by irradiating the surface with laser light so as to form a welded part existing in the metal member and penetrate the plurality of metal foils in the laminating direction. In the second step, the welded part is formed at least on the surface so as to be connected in a direction in which the plurality of irradiation reference positions are arranged, by sequentially performing, at each of a plurality of irradiation reference positions arranged at intervals on the surface, point-shape irradiation in a stopped state or in a state of revolving about a corresponding irradiation reference position.
In this laser welding method, during a first step, for example, a first member and a second member having a curved protruding surface protruding toward the first member are caused to approach each other so as to compress a plurality of metal foil sheets in a state of being sandwiched between the first member and the curved projecting surface in the stacking direction, whereby a compressed section bent in a state of protruding in a first direction along the curved projecting surface is formed in the plurality of metal foil sheets such that at least the metal foil positioned at an end portion of the compressed section in the first direction is partially plastically deformed. In a second step following the first step, a metal member and a site including the compressed section of the plurality of metal foil sheets are bonded in a state where the metal member and the end portion of the compressed section in the first direction contact each other.
Provided is a compact light-emitting device. This light-emitting device includes: a base body having a base part having a first upper surface, and a frame part having a second upper surface; a semiconductor laser element arranged on the first upper surface and emitting light of a far field pattern of an elliptical shape; and a lid body having an upper surface, a lower surface joined to the second upper surface, and a cylindrical lens surface formed so as to be recessed to the upper surface side on the lower surface side. The semiconductor laser element is arranged in a sealing space surrounded by the base body and the lid body. The lid body further diffuses the fast axis direction of light that is emitted from the semiconductor laser element and incident on the cylindrical lens surface, and causes the light to be emitted from the upper surface.
Disclosed is a light emitting device (1) which comprises: a light emitting element (20); a first covering member (61) that includes, as a base material, a resin that covers the lower surface and/or the side surface of the light emitting element (20); a second covering member (62) that is positioned above the first covering member (61) and composed of an inorganic material; and granular members (70) that are disposed between the first covering member (61) and the second covering member (62). The granular members (70) include inorganic particles (75) that are in contact with both the first covering member (61) and the second covering member (62).
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
Provided is a wavelength conversion element in which high-quality crystal part can be utilized by a simple configuration. This wavelength conversion element comprises a substrate having a main surface, and an optical waveguide disposed on the main surface of the substrate, a core of the optical waveguide including a polar member having a second-order nonlinear optical constant and a first non-polar member disposed adjacent to the polar member in a direction parallel to the main surface of the substrate, and one or both side surfaces of the polar member and the first non-polar member being in contact with each other in a cross section orthogonal to the optical axis of the optical waveguide.
The present invention provides: a method for manufacturing a light emitting element, with which it is possible to improve luminance; and a light emitting element. This method for manufacturing a light emitting element comprises: a step for preparing a wafer which has a first insulating film that is disposed on a second semiconductor layer of a semiconductor structure, a first electrode that is disposed on the first insulating film, and a second electrode that is disposed on the first insulating film and is connected to the second semiconductor layer in an opening of the first insulating film; a step for removing a part of the semiconductor structure from the upper surface side of the first semiconductor layer, and separating the semiconductor structure into a plurality of light emitting units so that the first electrode has a first portion that is positioned outside the outer edges of the light emitting units in a plan view; a step for removing a part of the first insulating film so as to expose the first portion of the first electrode from the first insulating film, and removing a part of a second insulating film that covers the light emitting units so as expose a part of the first semiconductor layer from the second insulating film; and a step for forming, on the second insulating film, a first wiring line that electrically connects the part of the first semiconductor layer exposed from the second insulating film and the first portion of the first electrode exposed from the first insulating film.
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/22 - Surfaces irrégulières ou rugueuses, p.ex. à l'interface entre les couches épitaxiales
Disclosed is a light-emitting device comprising a graphite-containing substrate. This light-emitting device comprises: a substrate that contains graphite as a main material and has a first upper surface; a sub-mount that is disposed on the first upper surface of the substrate; a first light-emitting element that is disposed on the sub-mount and emits light in a first direction; a reflection member that is disposed on the first upper surface of the substrate at a position separated from the first light-emitting element in the first direction; and a frame that is demarcated by a through-hole surrounding the first light-emitting element and the reflection member in top view and has a second upper surface, a lower surface jointed to the substrate, and a wiring layer provided to the upper surface at a position separated from the first light-emitting element in a direction opposite from the first direction. The first upper surface of the substrate has a first region that covers the through-hole in top view, and a second region that extends from the first region to immediately below one or more wiring layers provided to the second upper surface.
H01S 5/02315 - Éléments de support, p. ex. bases ou montures
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01S 5/02208 - SupportsBoîtiers caractérisés par la forme des boîtiers
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
23.
LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME
A light-emitting semiconductor element (100) includes a nitride-semiconductor stack (10) comprising: a first semiconductor layer (21) that contains an n-type impurity; a composition gradient layer (23) that contains an n-type impurity and is formed on the first semiconductor layer (21) and that has a band gap energy which decreases as the distance from the first semiconductor layer (21) increases; and a second semiconductor layer (22) that contains an n-type impurity and is formed on the composition gradient layer (23) and that has a lower band gap energy than the first semiconductor layer (21). At least some of the composition gradient layer (23) contains the n-type impurity in a first concentration, at least some of the second semiconductor layer (22) contains the n-type impurity in a second concentration, and the composition gradient layer (23) and/or the second semiconductor layer (22) includes a high-concentration region (233) in which the n-type impurity is contained in a third concentration, higher than the first concentration and the second concentration. Such a configuration makes it possible to provide a light-emitting semiconductor element (100) having an operating voltage that can be reduced effectively, and to provide a method for manufacturing the same.
H01S 5/32 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures
H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
Provided is an image display device that can be easily assembled. The image display device has: a housing having an inner surface and an opening part demarcated by the inner surface; a display part disposed inward of the inner surface of the housing in the opening part, and having a display surface and a side surface connected to the display surface; a wiring board disposed on the inner surface of the housing, and having a wiring part on the opposite side of at least a surface facing the inner surface; and one or more light-emitting parts disposed between the inner surface of the housing and the side surface of the display part, and disposed on the wiring part. The light-emitting part includes a mounting surface facing the wiring part of the wiring board, and a light-emitting surface that intersects and is connected to the mounting surface. The one or more light-emitting parts can emit light in a direction in which the display surface faces.
H01F 1/06 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p. ex. de poudre
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/05 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
To provide a vehicle lamp with which it is possible to reduce a change in position of the maximum luminous intensity of irradiation light, and tone irradiation light. The vehicle lamp comprises a plurality of light-emitting units that emit light of different colors and can be individually driven, and a condensing optical system that condenses light from the plurality of light-emitting units, wherein light from the plurality of light-emitting units can be incident on the condensing optical system in a mixed color state in a plane that includes a focal point of the condensing optical system and intersects a normal line of a light-emitting surface that is included in at least any one of the plurality of light-emitting units, and the light that is condensed by the condensing optical system can be toned.
F21S 41/33 - Réflecteurs à multi-surfaces, p. ex. réflecteurs à facettes ou réflecteurs avec des sections de courbure différente
F21S 41/148 - Diodes électroluminescentes [LED] la direction principale d’émission des LED faisant un angle avec l’axe optique du dispositif d’éclairage la direction principale d’émission des LED étant perpendiculaire à l’axe optique
F21S 41/153 - Diodes électroluminescentes [LED] disposées sur une ou plusieurs lignes disposées dans une matrice
F21S 41/663 - Dispositifs d’éclairage spécialement adaptés à l’extérieur des véhicules, p. ex. phares caractérisés par une distribution lumineuse variable par action sur des sources lumineuses par commutation de sources lumineuses
F21W 102/155 - Répartition ou contour de la lumière émise pour la zone du faisceau des feux de route ou du faisceau des feux de croisement la lumière ayant des lignes de coupure, c.-à-d. des limites claires entre les zones d’émission de lumière et les zones d’obscurité avec des lignes de coupure inclinées et horizontales
F21Y 113/17 - Combinaison de sources lumineuses de couleurs différentes comprenant un ensemble de sources lumineuses ponctuelles formant une seule source lumineuse encapsulée
B22F 3/00 - Fabrication de pièces ou d'objets à partir de poudres métalliques, caractérisée par le mode de compactage ou de frittageAppareils spécialement adaptés à cet effet
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/142 - Traitement thermique ou thermomécanique
B22F 3/24 - Traitement ultérieur des pièces ou objets
B22F 9/04 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par des procédés physiques à partir d'un matériau solide, p. ex. par broyage, meulage ou écrasement à la meule
C22C 19/03 - Alliages à base de nickel ou de cobalt, seuls ou ensemble à base de nickel
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
H01F 1/047 - Alliages caractérisés par leur composition
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
28.
METHOD OF MANUFACTURING ELECTRODE ACTIVE SUBSTANCE FOR LITHIUM–SULFUR BATTERY
Provided is a method of manufacturing an electrode active substance for lithium–sulfur batteries that enables constructing batteries of improved cycling characteristics. This method of manufacturing an electrode active substance for lithium–sulfur batteries includes: together with a composite material containing a porous carbon material and sulfur supported on the porous carbon material, mixing a metal source and a liquid medium to obtain a first modified composite material onto which a metal compound derived from the metal source is adhered; and heat-treating the first modified composite material to obtain a second modified composite material onto which a metal sulfide is adhered.
This sintered-body substrate manufacturing method includes: preparing a ceramic substrate (1) that has a first surface (1A) and a second surface (1B) which is the side opposite the first surface, and that includes through-holes (2) which penetrate the ceramic substrate so as to link the first surface and the second surface; placing, in the through-holes, an electroconductive paste (3A) containing at least a metal powder (45A), a first active metal powder (6A1), and an organic solvent (7B); placing a second active metal powder (6A2) on the surface of the electroconductive paste which was placed; and firing the electroconductive paste on which the second active metal powder was placed.
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 3/12 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de l'impression pour appliquer le matériau conducteur
H05K 3/40 - Fabrication d'éléments imprimés destinés à réaliser des connexions électriques avec ou entre des circuits imprimés
This optical device comprises, for example: a base having a first surface directed to a first direction; an optical component that has a second surface facing the first surface and adhered by an adhesive to the first surface; and a suppression part that suppresses a portion of laser light having an optical axis offset from the optical component from reaching the adhesive. The optical device may comprise, as the suppression part, a first suppression part that suppresses laser light from entering the optical component, and may comprise, as the first suppression part, a first reflective part that reflects the laser light in a direction not approaching the adhesive. The first reflective part may be provided to a third surface positioned at an end of the optical element in the opposite direction of the traveling direction of the laser light, and may have a reflective film provided to the third surface.
H01S 5/02325 - Composants intégrés mécaniquement aux éléments de montage ou aux micro-bancs optiques
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/02326 - Dispositions pour le positionnement relatif des diodes laser et des composants optiques, p. ex. rainures dans le support pour fixer des fibres optiques ou des lentilles
The present invention provides a vehicular lamp having excellent versatility in light distribution. This vehicular lamp has: a plurality of light-emitting devices including a first light-emitting device and a second light-emitting device that can be driven individually; and a plurality of optical systems including a first optical system and a second optical system. The first optical system generates a first light distribution on the basis of light incident from the first light-emitting device. The second optical system generates a second light distribution on the basis of light incident from the second light-emitting device. The light-emitting area of the first light-emitting device is different from the light-emitting area of the second light-emitting device, and the light distribution angle of the first light distribution is different from the light distribution angle of the second light distribution.
F21S 41/663 - Dispositifs d’éclairage spécialement adaptés à l’extérieur des véhicules, p. ex. phares caractérisés par une distribution lumineuse variable par action sur des sources lumineuses par commutation de sources lumineuses
F21S 41/143 - Diodes électroluminescentes [LED] la direction principale d’émission des LED étant parallèle à l’axe optique du dispositif d’éclairage
F21S 41/151 - Diodes électroluminescentes [LED] disposées sur une ou plusieurs lignes
F21S 41/20 - Dispositifs d’éclairage spécialement adaptés à l’extérieur des véhicules, p. ex. phares caractérisés par des réfracteurs, des glaces de fermeture transparentes, des guides ou des filtres de lumière
F21S 41/265 - Lentilles compositesLentilles en forme de patch
F21S 41/43 - Dispositifs d’éclairage spécialement adaptés à l’extérieur des véhicules, p. ex. phares caractérisés par des écrans, des éléments non réfléchissants, des éléments faisant écran à la lumière ou des éléments d’occultation fixes caractérisés par leur forme
F21V 23/00 - Agencement des éléments du circuit électrique dans ou sur les dispositifs d’éclairage
F21W 102/13 - Répartition ou contour de la lumière émise pour la zone du faisceau des feux de route ou du faisceau des feux de croisement
F21W 102/155 - Répartition ou contour de la lumière émise pour la zone du faisceau des feux de route ou du faisceau des feux de croisement la lumière ayant des lignes de coupure, c.-à-d. des limites claires entre les zones d’émission de lumière et les zones d’obscurité avec des lignes de coupure inclinées et horizontales
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
34.
WAVELENGTH CONVERSION MEMBER AND METHOD FOR PRODUCING WAVELENGTH CONVERSION MEMBER
Provided is a wavelength conversion member that makes it possible to reduce decreases in gas barrier performance and reduce thickness. The wavelength conversion member comprises a laminate including: a first layer having a first main surface, a second main surface positioned on the opposite side from the first main surface, and side surfaces positioned between the first main surface and the second main surface, said first layer including a wavelength conversion layer containing quantum dots, a first barrier layer arranged on the first main surface and positioned on the wavelength conversion layer side, and a first resin layer arranged on the first barrier layer; and a second layer arranged on the second main surface. In a planar view, the first layer has a first central section and a first outer peripheral section that is continuous with the first central section and positioned around the first central section, the thickness of the first resin layer in the first peripheral section is thinner than the thickness of the first resin layer in the first central section, and the surface of the first outer peripheral section and the side surface of the wavelength conversion layer are coated in a continuous manner by a coating film.
The present invention provides a semiconductor laser element which is capable of unifying or almost unifying the vertical modes of an oscillation wavelength. The present invention specifically provides a semiconductor laser element which is provided with a nitride semiconductor multilayer body that has a first end face, a second end face and an optical waveguide, wherein: the nitride semiconductor multilayer body comprises a first n-side nitride semiconductor layer, a second n-side nitride semiconductor layer, an active layer and a p-side nitride semiconductor layer; the first n-side nitride semiconductor layer comprises a diffraction grating part that is provided with a periodic structure in which the refractive index periodically changes in the resonance direction of the optical waveguide, and a non-diffraction grating part that is positioned between the diffraction grating part and the first end face, and is not provided with a periodic structure; the active layer comprises an n-side well layer and an n-side barrier layer; the second n-side nitride semiconductor layer is a nitride semiconductor layer that comprises In and Ga; and the thickness of the second n-side nitride semiconductor layer is larger than the thickness of the n-side barrier layer.
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
36.
LIGHT EMITTING ELEMENT MANUFACTURING METHOD AND LIGHT EMITTING ELEMENT
Provided are: a light emitting element manufacturing method wherein a light emitting element exhibiting an improved light-extraction efficiency can be efficiently manufactured; and a light emitting element. This light emitting element manufacturing method comprises: a process of preparing a wafer that has a first substrate, a semiconductor structure, a first electrode and a second electrode; a process of joining a second surface side of the semiconductor structure to a second substrate with the intervention of a joining member; after the process of joining the semiconductor structure to the second substrate, a process of separating the semiconductor structure from the first substrate, thereby exposing a first surface of the semiconductor structure; after the process of exposing the first surface of the semiconductor structure, a process of removing portions of the semiconductor structure, thereby forming, in the semiconductor structure, first grooves that separate the semiconductor structure into a plurality of element portions on the second substrate; after the process of forming the first grooves in the semiconductor structure, a process of roughening the surfaces of the plurality of element portions on the second substrate; and a process of separating the plurality of element portions from the second substrate.
The present invention achieves a light-emitting device that emits light with a good polarization ratio. Provided is a light-emitting device comprising: a first sub-mount which has a ceramic substrate that contains AlN and a plurality of upper metal layers that are provided to the upper surface side of the ceramic substrate; and a first semiconductor laser element which is disposed on an upper surface of the first sub-mount and which oscillates with a TM mode, wherein the plurality of upper metal layers include one or more upper first metal layers which have a metal layer including at least Ni.
Provided is a light-emitting device that can reduce glare and has excellent durability, a headlight, and a vehicle equipped with the same. The light-emitting device comprises: a light-emitting element having an emission peak wavelength in the range of 400- 490 nm; and a wavelength conversion member that has a first phosphor having an emission peak wavelength in the range of 480 nm to less than 580 nm, and a second phosphor having an emission peak wavelength in the range of 580-680 nm and having a composition different from that of the first phosphor. The light emitting device emits light having a first luminance ratio Ls/L of 0.9 or less, said first luminance ratio Ls/L being a ratio of the first effective radiation luminance Ls of the light emitted from the light-emitting device in consideration of the spectral sensitivity of the human S-cone and the human photopic standard luminous efficiency curve defined by CIE, with respect to the luminance L of the light emitted from the light-emitting device in consideration of the human photopic standard luminous efficiency curve. The first phosphor includes a rare earth aluminate phosphor having a composition represented by formula (1A).
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
F21S 41/14 - Dispositifs d’éclairage spécialement adaptés à l’extérieur des véhicules, p. ex. phares caractérisés par la source lumineuse caractérisés par le type de source lumineuse
F21W 102/00 - Dispositifs d’éclairage à l’extérieur des véhicules à des fins d'éclairage
F21Y 115/00 - Éléments générateurs de lumière de sources lumineuses à semi-conducteurs
This light source device comprises: one or more first light source parts, one or more second light source parts, and a light-shielding member disposed between the first light source parts and the second light source parts. The first light source parts each have two or more first laminated bodies in each of which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are laminated in a first direction. The second light source parts each have one or more second laminated bodies in each of which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are laminated in a first direction. In the first light source part, the two or more first laminated bodies are continuously laminated in the first direction. The number of first laminated bodies included in the first light source part is smaller than the number of second laminated bodies included in the second light source part.
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
G03B 15/05 - Combinaisons d'appareils photographiques avec flash électroniqueFlash électronique
H01L 33/08 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une pluralité de régions électroluminescentes, p.ex. couche électroluminescente discontinue latéralement ou région photoluminescente intégrée au sein du corps semi-conducteur
H01S 5/42 - Réseaux de lasers à émission de surface
40.
LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
The present disclosure provides a light emitting device comprising a cover member having higher heat resistance, and a method for manufacturing the light emitting device. This light emitting device 1 comprises: a light emitting element 10 provided with a semiconductor structure 11 having a light emitting surface 11a, an electrode forming surface 11b positioned on the side opposite to the light emitting surface 11a, and a side surface 11c positioned between the light emitting surface 11a and the electrode forming surface 11b, and a first electrode 12 that is disposed on the electrode forming surface 11b and that has a first surface 12a facing the electrode forming surface 11b, a second surface 12b positioned on the side opposite to the first surface 12a, and a side surface 12c positioned between the first surface 12a and the second surface 12b; and a light reflective member 20 covering the light emitting element 10 except for the light emitting surface 11a and the second surface 12b, wherein the light reflective member 20 includes a light reflective inorganic member 21 covering at least the side surface 11c of the semiconductor structure 11, and a light reflective resin member 22 covering the side surface 12c of the first electrode 12 and the light reflective inorganic member 21.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
A light emitting device according to the present invention includes: a base having a mounting surface; a plurality of semiconductor laser elements each emitting a laser beam in a first direction and arranged on the mounting surface along a second direction intersecting the first direction; a plurality of first mirror members each having a first reflecting surface that reflects the laser beam emitted from the corresponding semiconductor laser element and changing the traveling direction of the laser beam in a direction away from the mounting surface; a cover body that transmits the laser beams reflected by the first reflecting surfaces; and one or more second mirror members arranged on the cover body, having second reflecting surfaces that reflect the laser beams transmitted through the cover body, and further changing the traveling direction of the laser beams. The plurality of first mirror members are arranged on the mounting surface such that positions of the first reflecting surfaces in the first direction are different from one another. With the mounting surface serving as a reference surface, the heights of the optical axes of the laser beams reflected by the second reflecting surfaces from the reference surface are different from one another.
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
43.
CERAMIC SINTERED BODY SUBSTRATE, LIGHT-EMITTING DEVICE, AND METHODS FOR MANUFACTURING THESE
Provided is a method for manufacturing a ceramic sintered body substrate, the method including: preparing a ceramic substrate 1 in which a through-hole 2 is formed before firing (S11); disposing a first metal paste 3 in the through-hole (S12); and firing the ceramic substrate in which the first metal paste is disposed (S14). In the process for disposing the first metal paste, the first metal paste includes a plurality of first metal powders (4) and a plurality of active metal powders (50). The first metal powders include a metal powder (4a) that serves as a core, and a coating metal member (40b) that covers at least part of the metal powder, the coating metal member (40b) having a melting point lower than that of the metal powder. In the process for firing the ceramic substrate, the firing temperature is equal to or greater than 700°C and is less than the melting point of the metal powder.
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 3/12 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de l'impression pour appliquer le matériau conducteur
Provided is a light-emitting module capable of controlling a region that is partially irradiated with light within a region to be irradiated. This light-emitting module comprises: a light source that is provided with a plurality of light-emitting units each including a light-emitting surface; a first lens that transmits light from the plurality of light-emitting units; a drive unit that varies the relative inclination between the optical axis of the first lens and the light-emitting surfaces; and a control unit capable of controlling light emission of each of the plurality of light-emitting units and the operation of the drive unit. The light-emitting surfaces of the light-emitting units adjacent to each other are disposed with a predetermined space therebetween when viewed from above, a region to be irradiated is irradiated with the light transmitted through the first lens, and the control unit is capable of controlling the operation of the drive unit so as to compensate for the illuminance of a region corresponding to the predetermined space within the region to be irradiated in a predetermined period.
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21V 17/00 - Fixation des parties constitutives des dispositifs d'éclairage, p. ex. des abat-jour, des globes, des réfracteurs, des réflecteurs, des filtres, des écrans, des grilles ou des cages de protection
F21V 17/02 - Fixation des parties constitutives des dispositifs d'éclairage, p. ex. des abat-jour, des globes, des réfracteurs, des réflecteurs, des filtres, des écrans, des grilles ou des cages de protection avec possibilité de réglage
Provided is a light-emitting module capable of radiating light that is adjusted to a prescribed color. The light-emitting module comprises: a light source that includes a plurality of light emitting units which include a first light emitting unit that emits light having a first chromaticity and a second light emitting unit that emits light having a second chromaticity different from the first chromaticity, and each of which has a light emitting surface; a lens that transmits the light from the light source; a drive unit that can change the relative positions of the light source and the lens in a direction crossing the optical axis of the lens and/or the relative inclinations of the light emitting surfaces and the optical axis of the lens; and a control unit that is capable of controlling light emission of each of the plurality of light emitting units and operation of the drive unit, wherein the control unit performs control so as to cause the plurality of light emitting units to emit light during the operation for changing the relative positions and/or the relative inclinations by the drive unit, and so as to overlap, in an irradiated region, the positions of at least a portion of the light from the first light emitting unit that has passed through the lens prior to the operation and at least a portion of the light from the second light emitting unit that has passed through the lens after the operation.
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21V 13/02 - Combinaisons de deux sortes d'éléments uniquement
F21V 14/00 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs
F21V 23/00 - Agencement des éléments du circuit électrique dans ou sur les dispositifs d’éclairage
G03B 7/00 - Réglage de l'exposition par le réglage des obturateurs, des diaphragmes ou des filtres séparément ou conjointement
G03B 15/05 - Combinaisons d'appareils photographiques avec flash électroniqueFlash électronique
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H04N 23/74 - Circuits de compensation de la variation de luminosité dans la scène en influençant la luminosité de la scène à l'aide de moyens d'éclairage
H05B 45/10 - Commande de l'intensité de la lumière
H05B 45/325 - Modulation de la largeur des impulsions [PWM]
H05B 45/34 - Stabilisation de la tensionMaintien d'une tension constante
H05B 45/345 - Stabilisation du courantMaintien d'un courant constant
H05B 47/155 - Commande coordonnée de plusieurs sources lumineuses
H05B 47/16 - Commande de la source lumineuse par des moyens de minutage
F21Y 105/12 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la disposition géométrique des éléments générateurs de lumière, p. ex. par la disposition des éléments générateurs de lumière en différents schémas ou densités
F21Y 113/10 - Combinaison de sources lumineuses de couleurs différentes
α-FE-CONTAINING RARE EARTH ELEMENT-IRON-NITROGEN MAGNETIC POWDER, MANUFACTURING METHOD FOR SAME, MAGNETIC MATERIAL FOR MAGNETIC FIELD AMPLIFICATION, AND MAGNETIC MATERIAL FOR ULTRA-HIGH FREQUENCY ABSORPTION
Provided is a magnetic powder excellent in high frequency characteristics with low iron loss and excellent efficiency even when a high frequency is applied. The present invention relates to an α-Fe-containing rare earth element-iron-nitrogen magnetic powder comprising: a core region including a rare earth element R (where R is at least one type selected from the group consisting of Y, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, and Sm and if Sm is included, Sm is less than 50 atom% with respect to the R component as a whole), Fe, and N; and, on the outside of the core region, an α-Fe-containing region including α-Fe and at least one type selected from the group consisting of an oxide, a nitride, and an oxynitride of the rare earth element R.
C22C 33/02 - Fabrication des alliages ferreux par des techniques de la métallurgie des poudres
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
H01F 1/20 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre
H01F 1/24 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées les particules étant isolées
H01F 1/26 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées les particules étant isolées au moyen de substances organiques macromoléculaires
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
This light emitting device 1000A comprises: a base 100; at least one first light emitting element 51 that is disposed on the base and emits light from an upper surface and a side surface thereof; a reflective member 153 disposed around the at least one first light emitting element 51; and a lens 73 that overlaps the at least one first light emitting element 51 in a top view, wherein the shape of the lens 73 in the top view is an elliptical shape having a major axis LA3 in an x direction and a minor axis SA3 in a y direction orthogonal to the x direction, and when seen from above, in the reflective member 153 overlapping the lens 73, has a surface area of a section of the reflective member present on the -y direction side of the major axis LA3 is greater than a surface area of a section of the reflective member present on the +y direction side of the major axis LA3.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
G09F 9/40 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le caractère désiré est sélectionné parmi plusieurs caractères disposés les uns à coté des autres, p. ex. sur une plaque support commune
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
This light-emitting module comprises: a support substrate having a plurality of placement surfaces arranged side by side in a first direction; a plurality of light-emitting devices, the corresponding light-emitting devices being disposed on the respective placement surfaces, and each including a semiconductor laser element, a first mirror member, a cover, and a second mirror member; a plurality of third mirror members; and a light condensing lens. The first mirror member changes the traveling direction of laser light emitted from the semiconductor laser element, the cover transmits the laser light having the changed traveling direction, the second mirror member further changes the traveling direction of the laser light transmitted through the cover to a second direction, and each third mirror member changes the traveling direction of the laser light from the second direction to the first direction. The light condensing lens couples a plurality of laser light beams to optical fibers.
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/02251 - Découplage de lumière utilisant des fibres optiques
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
49.
WAVELENGTH CONVERSION MEMBER AND WAVELENGTH CONVERSION MEMBER MANUFACTURING METHOD
Provided are a wavelength conversion member with which it is possible to suppress a decrease in wavelength conversion efficiency, and a wavelength conversion member manufacturing method. The wavelength conversion member comprises a layered body which includes: a first barrier layer having a first main surface, a second main surface positioned opposite the first main surface, and an end surface connected to the first main surface; a wavelength conversion layer that has a third main surface and a fourth main surface positioned opposite the third main surface, and which is disposed on the first barrier layer with the third main surface and the second main surface of the first barrier layer facing each other, the wavelength conversion layer including quantum dots; and a second barrier layer that includes a fifth main surface and a sixth main surface positioned opposite the fifth main surface, and which is disposed on the wavelength conversion layer with the fifth main surface and the fourth main surface of the wavelength conversion layer facing each other. The wavelength conversion layer is positioned on the inside of the end surface in one cross section intersecting the third main surface and taken through the end surface, and has a first side surface connecting the third main surface and the fourth main surface. The first side surface is coated with a coating film.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
50.
POSITIVE-ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERIES, METHOD FOR MANUFACTURING SAME, POSITIVE ELECTRODE FOR SECONDARY BATTERIES USING SAME, AND SECONDARY BATTERY
Provided is a method for manufacturing a positive-electrode active material for secondary batteries, said method being capable of configuring a battery with improved battery resistance. This method for manufacturing a positive-electrode active material for secondary batteries comprises: preparing lithium transition metal composite powder that has a layered structure, in which the ratio of the molar number of nickel atoms with respect to the total molar number of metal atoms other than lithium is 0.5 inclusive to 1 exclusive, and in which the ratio of the molar number of cobalt atoms with respect to the total molar number of metal atoms other than lithium is 0 inclusive to 0.5 exclusive; obtaining a cobalt-adhered complex oxide by bringing the lithium transition metal composite powder into contact with a cobalt raw material; obtaining a first heat-treated object by subjecting the cobalt-adhered complex oxide to first heat treatment at a temperature from 600°C to 800°C exclusive; obtaining a niobium-adhered complex oxide by bringing the first heat-treated object into contact with a niobium raw material; and obtaining a second heat-treated object by subjecting the niobium-adhered complex oxide to second heat treatment at a temperature from 300°C to 500°C exclusive.
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
This light source unit comprises a display device capable of displaying an image, a first prism sheet on which light emitted from the display device is incident, and an image formation optical system. The image formation optical system includes an input element on which light emitted from the first prism sheet is incident and an output element on which light that has gone through the input element is incident, and light emitted from the output element forms a first image corresponding to the image. The image formation optical system has an approximately telecentric property on the first image side. The light emitted from the display device has an approximately Lambertian light distribution.
This light source unit comprises: a first display device; a second display device; a first polarizing plate which causes light emitted from the first display device to be first polarized light having a first polarization direction; a second polarizing plate which causes light emitted from the second display device to be second polarized light having a second polarization direction; a reflection-type polarizing plate which allows the first polarized light to transmit therethrough and reflects the second polarized light; a first reflection member; a first wave plate disposed between the reflection-type polarizing plate and the first reflection member; a second reflection member; and a second wave plate disposed between the reflection-type polarizing plate and the second reflection member. A first optical path length from the first display device to the first reflection member for the light emitted from the first display device is longer than a second optical path length from the second display device to the second reflection member for the light emitted from the second display device, and the curvature of a first concave surface is greater than the curvature of a second concave surface.
This video display system comprises a light source unit and a drive unit. The light source unit has a display device and an image forming optical system. The display device is capable of displaying an image. In the image forming optical system, a first picture that corresponds to the aforementioned image is projected on a projection part, and a picture that is visually recognizable to a viewer is thereby displayed on a far side of the projection part as viewed from the viewer. The drive unit changes the position of the first picture by controlling the position and/or orientation of the light source unit on the basis of a state signal inputted from outside.
The present invention provides a light-emitting device that can suppress a reduction in luminous flux, and a manufacturing method therefor. A light-emitting device (100) comprises: a light-emitting element (1) which has a first surface that is a light extraction surface, a second surface that is on the opposite side from the first surface, and a side surface that connects the first surface and the second surface, and which has an element electrode on the second surface; a substrate (20) which has wiring that is electrically connected to the element electrode; a translucent member (5) which is disposed on the first surface of the light-emitting element and through which light from the light-emitting element passes; an inorganic member (11) which, on the substrate, is disposed on the side surface of the light-emitting element or laterally to the light-emitting element, and on the side surface of the translucent member; and a light-reflecting member (12) which makes contact with at least part of the inorganic member. The inorganic member has a plurality of gaps (11a). At least part of the light-reflecting member is impregnated in at least some of the plurality of gaps of the inorganic member.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
55.
LIGHT SOURCE UNIT, VIDEO DISPLAY DEVICE, AND AUTOMOBILE
A light source unit according to the present invention comprises: a display device that has a plurality of pixels and can display an image; a color-changing sheet on which light emitted from the display device is incident; an image-forming optical system; and a driving unit that changes the positional relationship between the display device and the color-changing sheet. The image-forming optical system forms a first image corresponding to the aforementioned image. The color-changing sheet comprises: a first region on which light from the image is incident and which emits light of a first color; and a second region on which light from the image is incident and which emits light of a second color. The driving unit changes the positional relationship between the display device and the color-changing sheet between a first positional relationship, in which light emitted from one of the pixels is incident on the first region, and a second positional relationship, in which light emitted from the one pixel is incident on the second region.
B60K 35/00 - Instruments spécialement adaptés aux véhiculesAgencement d’instruments dans ou sur des véhicules
G02B 26/00 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
The purpose of the present invention is to provide: a light emitting element from which light is able to be more efficiently extracted; and a light emitting device. The present invention provides a light emitting element which comprises: a substrate; a semiconductor structure which is arranged on the substrate and sequentially comprises, from the substrate side, an n-side semiconductor layer, an active layer and a p-side semiconductor layer; a p-electrode which is arranged on the p-side semiconductor layer and is electrically connected to the p-side semiconductor layer; and an n-electrode which is arranged on the n-side semiconductor layer and is electrically connected to the n-side semiconductor layer. With respect to this light emitting element, the n-electrode comprises a base part and a plurality of extension parts that extend from the base part; the substrate comprises an exposure part that is exposed from the semiconductor structure; the exposure part comprises a first exposure part which is positioned between two extension parts that are adjacent to each other in a top view, and a second exposure part which is arranged on the outer peripheral part of the substrate, while being connected with the first exposure part; and the p-electrode is arranged between the extension parts and the first exposure part in a top view.
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/14 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure contrôlant le transport des charges, p.ex. couche semi-conductrice fortement dopée ou structure bloquant le courant
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
57.
CARBON MATERIAL FOR LITHIUM SULFUR BATTERY AND PRODUCTION METHOD THEREFOR
Provided is a method for producing a carbon material which is for a lithium sulfur battery and with which a battery with improved charge and discharge capacity can be configured. This method for producing a carbon material for a lithium sulfur battery comprises: obtaining a slurry by subjecting a mixture containing a first carbon material, a dispersant, and a liquid medium to a wet-type crushing treatment; obtaining a second carbon material by removing at least a part of the liquid medium from the slurry; obtaining a third carbon material by subjecting the second carbon material to a heat treatment; and obtaining a fourth carbon material by subjecting the third carbon material to an activation treatment.
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
C01B 32/342 - Préparation caractérisée par des agents d’activation non gazeux
H01M 4/136 - Électrodes à base de composés inorganiques autres que les oxydes ou les hydroxydes, p. ex. sulfures, séléniures, tellurures, halogénures ou LiCoFy
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
58.
LIGHT-EMITTING DEVICE, SPECTROSCOPE, AND METHOD FOR PRODUCING LIGHT-EMITTING MEMBER
Provided are a light-emitting device, a spectroscope, and a method for producing a light-emitting member. The light-emitting device comprises: a light-emitting member including a light-emitting element for emitting first light, a light-emitting material that is arranged on the light exit side of the light-emitting element, absorbs the first light, and consequently emits second light having a light emission peak wavelength of 800-1100 nm, and a resin; and an optical thin film that is arranged on the light exit side of the light-emitting member, reflects the first light, and transmits the second light. In the light emission spectrum of the light-emitting device, a first integral value ratio Ib/Ia of the integral value Ia of light emission intensities of 200 nm or more and less than 550 nm and the integral value Ib of light emission intensities of 550-600 nm is 0-0.05 and a second integral value ratio Ic/Ia of the integral value Ia and the integral value Ic of light emission intensities of 800-1100 nm is 0.75-30.
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
C09K 11/80 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'aluminium ou du gallium
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
59.
LIGHT-EMITTING APPARATUS AND ILLUMINATION APPARATUS
Provided is a light-emitting apparatus and an illumination apparatus. This light-emitting apparatus comprises: a light-emitting element having an emission peak wavelength of 430 nm to 470 nm; and a fluorescent member containing a first fluorescent body having an emission peak wavelength of at least 510 nm to 590 nm exclusive, and a second fluorescent body having an emission peak wavelength of 590 nm to 670 nm and including a first fluoride fluorescent body having a composition included in the compositional formula represented by formula (1). The light-emitting apparatus satisfies condition (A) or (B). Formula (1): A1cc[M11-aabb] (In formula (1), A1includes K; M1includes Si and Al; a and b satisfy 0 < a < 0.2 and 5 < b < 7, and c is the absolute value of the electric charge of [M11-aabb] ions.) Condition (A): General color rendering index Ra is in the range from 80 to 90 and color rendering index R9 is 50 to 90. Condition (B): General color rendering index Ra is in the range from 80 to 87 and color rendering index R9 is 50 or more.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
F21V 3/08 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements caractérisés par le matériau le matériau comprenant des substances photoluminescentes
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
60.
LIGHT-EMITTING MODULE, IMAGING DEVICE, AND IRRADIATION METHOD FOR LIGHT-EMITTING MODULE
Provided are an imaging device, an irradiation method for a light-emitting module, and a light-emitting module excellent in spatial resolution of irradiation light. This light-emitting module comprises: a light source comprising a plurality of light-emitting elements; a control unit that is capable of individually turning on each among the plurality of light-emitting elements; a lens that transmits light from the plurality of light-emitting elements; and a drive part that is capable of relatively rotate the lens and the light source such that the optical axis of the lens or the the center axis of the light source moves on a first trajectory in a top view. After having penetrated the lens, the light from the light-emitting elements is irradiated such that the main light beam of said light moves on a second trajectory corresponding to a first trajectory, and, when the main light beam of the light moving around the second trajectory one time is defined as one cycle, the control unit is capable of changing the brightness of the light from the light-emitting elements during a plurality of divided periods into which one cycle is divided.
G03B 15/05 - Combinaisons d'appareils photographiques avec flash électroniqueFlash électronique
H05B 45/10 - Commande de l'intensité de la lumière
H05B 47/16 - Commande de la source lumineuse par des moyens de minutage
F21Y 105/16 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la forme d’ensemble du réseau bidimensionnel carrée ou rectangulaire, p. ex. pour les panneaux de lumière
A light-emitting module according to an embodiment comprises: a substrate that includes a support member having a first surface, and a wiring layer provided on the first surface; a plurality of light-emitting elements that are provided on the first surface and electrically connected to the wiring layer; a plurality of light-adjusting members that are respectively provided away from the plurality of light-emitting elements on the upper surface side of the plurality of light-emitting elements; at least one light-blocking member that is provided on the first surface, when viewed in plan view, provided so as to surround a first light-emitting element among the plurality of light-emitting elements and surround a first light-adjusting member among the plurality of light-adjusting members, and when viewed in cross section, provided between the first light-emitting element and a second light-emitting element among the plurality of light-emitting elements; and a light-transmitting member that covers the first surface, the wiring layer, the plurality of light-emitting elements, the plurality of light-adjusting members, and the light-blocking member.
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
Provided is a light emission module that provides a high degree of freedom in changing the color of light. This light emission module comprises: a plurality of light-emitting units; an optical member that includes at least one first region from which light having a first chromaticity can be extracted and at least one second region from which light having a second chromaticity different from the first chromaticity can be extracted, and allows light emitted from the light-emitting units 1 to transmit or pass therethrough; a variable mechanism for changing the distance between the optical member and the light-emitting units; and a first lens into which the light having transmitted or passed through the optical member enters. At least one of the first and second regions is provided so as to be paired with the light-emitting units. The variable mechanism changes the distance between the optical member and the light-emitting units in a direction along the center axis of the first lens.
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
63.
LIGHT EMITTING DEVICE AND METHOD FOR DRIVING LIGHT EMITTING DEVICE
The present invention enables realization of appropriate driving when configuring a light emitting device, such as a display, using multicolor-light-emitting type semiconductor light emitting elements. A light emitting device (100) comprises: a plurality of light emitting elements (11) that are capable of emitting light in various luminescent colors in accordance with a driving current; a display unit (10) on which the plurality of light emitting elements (11) are arranged; a drive unit (30) for supplying a driving current to the plurality of light emitting elements (11); a lighting control unit (50) for controlling the drive unit (30) so as to cause each of the light emitting elements (11) to emit light in a prescribed luminescent color and at a prescribed light emitting luminance; and an information retaining unit (70) for retaining current-chromaticity information for determining a driving current value for driving each of the light emitting elements (11) in accordance with the luminescent color in which the light emitting element (11) emits light. The lighting control unit (50) is configured: to determine, by referring to the current-chromaticity information retained by the information retaining unit (70) in accordance with a prescribed luminescent color and gradation information for each of the light emitting elements (11), a driving current value for driving the light emitting element (11) and an ON period for lighting the light emitting element; and to drive, by a driving current from the drive unit (30), the light emitting element (11) to light up.
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED]
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
This light source module comprises: a first light-emitting part; a light guide member; a light reflection member; a light branch member; and a retroreflection member. The light guide member has a linear part and a bent part. The linear part and the bent part have a first surface for outputting light emitted from the first light-emitting part in a first direction and a second surface positioned on a side opposite to the first surface. The linear part extends in a second direction orthogonal to the first direction, and the bent part bends from the second direction toward the first direction. In the linear part and the bent part, the light reflection member is disposed closer to the second surface than to the first surface. The light branch member has a third surface, and the retroreflection member has a fourth surface. The third surface reflects a portion of the light outputted from the first surface to the fourth surface.
This light-emitting device comprises a substrate that has an upper surface, a light-transmissive member that has a lower surface that faces the upper surface of the substrate, a plurality of surface emission–type laser elements that are disposed between the upper surface of the substrate and the lower surface of the light-transmissive member and that are capable of upper-surface light emission, and a wiring relay member that is disposed between the upper surface of the substrate and the lower surface of the light-transmissive member. The substrate has first wiring and second wiring. The light-transmissive member has third wiring that is electrically connected to the first wiring via the wiring relay member. The plurality of surface emission–type laser elements include first laser elements that are electrically connected to the third wiring, and second laser elements that are electrically connected to the second wiring.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
66.
WAVELENGTH CONVERSION MEMBER AND MANUFACTURING METHOD THEREFOR
The present invention provides a wavelength conversion member that suppresses discoloration from the end portion thereof. The wavelength conversion member includes a laminate comprising a wavelength conversion layer containing quantum dots and two barrier layers laminated on one principal surface and the other principal surface of the wavelength conversion layer, respectively. In the wavelength conversion member, the barrier layers have a first modification part at least on a portion of the end surfaces thereof, the wavelength conversion layer has a second modification part at least on a portion of the end surface thereof, and at least a portion of the second modification part is exposed together with the barrier layers on the end surface of the laminate.
B23K 26/38 - Enlèvement de matière par perçage ou découpage
C09K 11/00 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/66 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du germanium, de l'étain ou du plomb
C09K 11/70 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore
Provided is a light-emitting device that emits amber light and that has good temperature characteristics. This light-emitting device comprises: a light-emitting element having an emission peak wavelength between 380 nm and 470 nm; and a wavelength conversion member including a fluorescent body that emits light by absorbing at least a portion of the light from the light-emitting element. The fluorescent body includes: a first fluorescent body that has an emission peak wavelength between 535 nm and 560 nm and a half-value width of 100 nm to 120 nm and that contains a nitride comprising La, Ce, and Si; and a second fluorescent body that has an emission peak wavelength between 605 nm and 620 nm and a half-value width of 70 nm to 80 nm and that contains a nitride comprising Eu, Si, Al and at least one of Ca and Sr. The light-emitting device emits light that is in the region defined by joining (0.545, 0.425), (0.560, 0.440), (0.609. 0.390), and (0.597, 0.390) in the xy chromaticity coordinate system of a CIE1931 chromaticity diagram.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
This laser welding method comprises: a first step for forming a first welded part in which a metal member and a metal foil contained in a layered body are welded by laser light irradiation; and a second step for irradiating laser light onto a region that includes a portion adjacent to a portion connecting the first welded part and the metal foil, or onto a region that includes a portion adjacent to the space between the first welded part and the metal foil. In the second step, the first welded part may be joined to a metal foil that is separated by a space from the first welded part, and a region that includes the first welded part and adjacent portions on both sides enclosing this first welded part may be irradiated with laser light in a spot that is wider than the width or the diameter of the first welded part.
H01M 10/0585 - Structure ou fabrication d'accumulateurs ayant uniquement des éléments de structure plats, c.-à-d. des électrodes positives plates, des électrodes négatives plates et des séparateurs plats
This laser welding method comprises, e.g., a first step for forming a first welded section in which at least a plurality of metal foils included in a laminate are welded through irradiation with laser light, and a second step for welding the laminate and a metal member by irradiating a site that at least partially includes the first welded section of the laminate with laser light. Additionally, this metal joined body comprises, e.g.: a metal member; a laminate of metal foils that is disposed on the metal member; and a welding unit having a through-hole section passing through the laminate in the lamination direction of the metal foils, and a protruding section protruding from the through-hole section into the metal member, the welding part welding together the laminate and the metal member. Either the smallest width of the region where the through-hole section is formed is greater than the largest width of the protruding section, or the smallest diameter of the region where the through-hole section is formed is greater than the largest diameter of the protruding section.
B23K 26/00 - Travail par rayon laser, p. ex. soudage, découpage ou perçage
B23K 26/073 - Détermination de la configuration du spot laser
B23K 26/32 - Assemblage tenant compte des propriétés du matériau concerné
H01M 50/536 - Connexions d’électrodes dans un boîtier de batterie caractérisées par le procédé de fixation des conducteurs aux électrodes, p. ex. soudage
H01M 50/54 - Connexion de plusieurs conducteurs ou languettes d’électrodes empilées en forme de plaque, p. ex. barrettes ou ponts de pôles d’électrode
H01M 50/566 - Bornes caractérisées par leur procédé de fabrication par soudage, brasage ou brasage tendre
70.
WAVELENGTH CONVERSION MODULE, LIGHT EMISSION DEVICE, AND METHOD FOR MANUFACTURING WAVELENGTH CONVERSION MODULE
Provided is a wavelength conversion module having high reliability. A wavelength conversion module 100 comprises phosphor member 11 and a transmissive substrate 12 which is directly bonded to the phosphor member 11, has a heat conductivity higher than that of the phosphor member 11, and has a thickness of 100-600 μm.
C04B 35/50 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de composés de terres rares
C09K 11/80 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'aluminium ou du gallium
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
This lighting module comprises a board, a light source disposed on the board, a first lens upon which light emitted from the light source is incident, and a first holder to which the board and the first lens are fixed, wherein: when viewed from a first direction intersecting an optical axis of the light source, light emitted from the first lens is substantially parallel light that is substantially parallel to the optical axis; when viewed from a second direction intersecting the optical axis and the first direction, the light emitted from the first lens is substantially parallel light that is inclined with respect to the optical axis; a first end portion of the first lens in the second direction is fixed to the first holder; and when viewed from a third direction along which the optical axis extends, the first holder does not project in the second direction farther than the first lens.
F21V 5/08 - Réfracteurs pour sources lumineuses produisant une distribution de lumière asymétrique
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21V 17/00 - Fixation des parties constitutives des dispositifs d'éclairage, p. ex. des abat-jour, des globes, des réfracteurs, des réflecteurs, des filtres, des écrans, des grilles ou des cages de protection
G02B 3/06 - Lentilles simples ou composées à surfaces non sphériques à surfaces cylindriques ou en forme de tore
A light emission module (100) includes: a substrate (110); a plurality of light sources (120) that are fixed on the substrate (110) and the outputs of which can be individually controlled; light blocking members that are disposed among the plurality of light sources (120); a first lens (131) that is disposed above the plurality of light sources (120) and on which light generated by each of the light sources (120) is incident; and a drive unit (140) that can rotate the substrate (110). The plurality of light sources (120) include a first light source and a second light source. An angle formed by the optical axis of first light generated by the first light source and emitted from the first lens (131) and the rotation axis (D3) of the substrate (110) is different from an angle formed by the optical axis of second light generated by the second light source and emitted from the first lens (131) and the rotation axis (D3). The second light can be radiated in a first circular orbit centered on the rotation axis (D3).
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
F21L 4/00 - Dispositifs d'éclairage électriques avec des accumulateurs ou des piles électriques incorporés
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21V 9/30 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source
G02B 3/08 - Lentilles simples ou composées à surfaces non sphériques à surfaces discontinues, p. ex. lentille de Fresnel
G03B 15/05 - Combinaisons d'appareils photographiques avec flash électroniqueFlash électronique
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
F21Y 105/16 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la forme d’ensemble du réseau bidimensionnel carrée ou rectangulaire, p. ex. pour les panneaux de lumière
Provided is an optical circuit with which it is possible to reduce light source frequency fluctuations resulting from rotation. This optical circuit comprises: a substrate; a laser light source formed on the substrate by means of a first annular optical waveguide and a second annular optical waveguide sharing a portion with the first annular optical waveguide in one place; a first optical waveguide which is positioned spaced apart from the laser light source on the substrate, and which is optically coupled to the laser light source; and a resonator which is optically coupled to the first optical waveguide.
G01C 19/64 - Gyromètres utilisant l'effet Sagnac, c.-à-d. des décalages induits par rotation de faisceaux électromagnétiques dans des directions opposées
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/125 - Courbures, branchements ou intersections
A light-emitting device (100) comprises: an array light source (1) including a plurality of light-emitting units (10); a first lens (2) that irradiates a region to be irradiated with light emitted by the array light source (1); a movement mechanism (3) that relatively moves the first lens (2) and the array light source (1) in a direction crossing the optical axis of the first lens (2); and a control unit (4) including a light emission control unit that controls light emission of each of the plurality of light-emitting units (10), and a movement control unit that controls the operation of the movement mechanism (3). The light emission control unit controls light emission within a predetermined period of each of the plurality of light emission units, the movement control unit controls the operation of the movement mechanism such that the first lens and the array light source perform relative movement within the predetermined period, the relative movement includes first relative movement in which the first lens (2) and the array light source (1) relatively move along a first direction, each of the plurality of light-emitting units (10) has a light-emitting surface (11), the light emitting surfaces of the light-emitting units adjacent to each other are disposed with a first light-emitting surface spacing therebetween, and the distance of the first relative movement is a distance greater than or equal to the shorter of the first light emitting surface spacing or the width of the light-emitting surface 11 along the first direction.
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H04N 23/56 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande munis de moyens d'éclairage
This image display device according to one embodiment is equipped with an image-forming element and a light source. The image-forming element includes: a base material having a first surface; and a reflector array provided on the base material. The reflector array includes a plurality of reflector rows having a plurality of two-surface orthogonal reflectors provided along a first direction. The plurality of two-surface orthogonal reflectors each include: a first reflective surface to reflect light from the first surface side; and a second reflective surface which is orthogonal to the first reflective surface and reflects reflected light from the first reflective surface to the first surface side. With the base material serving as a reference, the tilt of the two-surface orthogonal reflectors is set such that an image is formed on the first surface side.
G02B 30/56 - Systèmes ou appareils optiques pour produire des effets tridimensionnels [3D], p. ex. des effets stéréoscopiques l’image étant construite à partir d'éléments d'image répartis sur un volume 3D, p. ex. des voxels en projetant une image aérienne ou flottante
Provided is a light source device capable of radiating light toned in a predetermined color. This light source device comprises: a plurality of light emission units each including a light emission surface; an optical member including one or a plurality of first regions in which light of a first chromaticity can be extracted and one or a plurality of second regions in which light of a second chromaticity different from the first chromaticity can be extracted, and which transmits or allows passage of light emitted by the light emission units; a first movement mechanism that causes the plurality of light emission units and the optical member to make a relative movement such that the light emission surfaces and the optical member face each other; and a control unit including a light emission control unit that controls the light emission of each of the plurality of light emission units and a first movement control unit that controls the operation of the first movement mechanism. The light emission control unit performs control to cause each of the plurality of light emission units to emit light within a predetermined period. The first movement control unit performs control to cause the plurality of light emission units and the optical member to make a relative movement within a predetermined period.
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
F21L 4/00 - Dispositifs d'éclairage électriques avec des accumulateurs ou des piles électriques incorporés
F21V 9/32 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source caractérisés par la disposition du matériau photoluminescent
F21V 14/00 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs
F21V 14/02 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs par un mouvement de sources lumineuses
F21V 14/06 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs par un mouvement de réfracteurs
G03B 11/00 - Filtres ou autres intercepteurs spécialement adaptés pour les besoins photographiques
Provided is a solid electrolyte material for fluoride ion batteries that has high fluoride ion conduction. According to the present invention, a solid electrolyte material for fluoride ion batteries includes a metal fluoride complex that has, as a principal phase, a crystal structure that contains adduct ions in a fluorite structure that includes fluoride ions, lanthanoid metal ions, and alkali earth metal ions. The ion radius of the adduct ions is greater than the ion radius of the alkali earth metal ions. The composition of the metal fluoride complex is such that the ratio of the number of moles of the fluoride ions to the total number of moles of the lanthanoid metal ions, the alkali earth metal ions, and the adduct ions is greater than 1.87 but less than 3 and such that the ratio of the number of moles of the adduct ions to the number of moles of the alkali earth metal ions is less than 1.
H01M 10/36 - Accumulateurs non prévus dans les groupes
H01B 1/06 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques
The present invention provides: an optical circuit that provides stable optical coupling between a resonator and an optical waveguide; and an optical sensor comprising the same. The optical circuit (10) comprises a resonator (11) and an optical waveguide (23) that includes a ridge (231) formed upon substrate or a semiconductor layer (21). The resonator (11) has a light circulation plane (111) and is disposed such that part of the light circulation plane (111) faces the upper surface of the ridge (231), across a first gap (51). The distance (G) between part of the light circulation plane (111) and the upper surface of the ridge (231) facing said part of the light circulation plane (111) is shorter than the distance that an evanescent wave protrudes.
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G01C 19/64 - Gyromètres utilisant l'effet Sagnac, c.-à-d. des décalages induits par rotation de faisceaux électromagnétiques dans des directions opposées
G01P 15/093 - Mesure de l'accélérationMesure de la décélérationMesure des chocs, c.-à-d. d'une variation brusque de l'accélération en ayant recours aux forces d'inertie avec conversion en valeurs électriques ou magnétiques au moyen de capteurs photo-électriques
Provided are: a magnetic powder having outstanding high-frequency characteristics and having low iron loss and outstanding efficiency even when subjected to high frequency waves; a method for manufacturing a magnetic powder having outstanding high-frequency characteristics, and having low deterioration due to eddy currents and outstanding absorption characteristics even when exposed to ultra high frequency waves; a magnetic field-amplifying magnetic material having high frequency magnetic field-amplifying characteristics; and an ultra high frequency-absorbing magnetic material. The present invention relates to a method for manufacturing a magnetic powder, said method including a phosphorus treatment step for obtaining a phosphorus compound and a rare earth-iron-nitrogen magnetic powder by adding an inorganic acid to a slurry containing: a rare-earth-iron-nitrogen magnetic powder that contains R (where R is at least one selected from Y, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, and Sm; and, if Sm is included, Sm accounts for less than 50 atomic% of the R component as a whole), Fe, and N; water; and a phosphorus-containing substance. The present invention also relates to an ultra high frequency-absorbing magnetic material and a magnetic field-amplifying magnetic material containing a phosphorus compound and a rare earth-iron-nitrogen magnetic powder.
B22F 3/00 - Fabrication de pièces ou d'objets à partir de poudres métalliques, caractérisée par le mode de compactage ou de frittageAppareils spécialement adaptés à cet effet
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
C23C 22/07 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses au moyen de solutions aqueuses acides d'un pH < 6 contenant des phosphates
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
H01F 1/06 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p. ex. de poudre
H01F 1/08 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées
The present invention provides a positive electrode material capable of further improving load characteristics in a lithium ion secondary battery. Provided is a positive electrode material comprising: primary particles which include a lithium transition metal compound having an olivine structure; and carbon, to the surface of which the primary particles adhere, said positive electrode material including secondary particles which are obtained by aggregation of a plurality of the primary particles. In the positive electrode material, the content of carbon is more than 0.5 mass% but not more than 1.8 mass% with respect to the positive electrode material, and the lithium transition metal compound included in the positive electrode material has a crystallite size of 50-70 nm. The specific surface area of the positive electrode material is 14-45 m2/g.
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de composés inorganiques autres que les oxydes ou les hydroxydes, p. ex. sulfures, séléniures, tellurures, halogénures ou LiCoFyEmploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p. ex. phosphates, silicates ou borates
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
Provided is a light-emitting device capable of facilitating identification of characters and the like when used by a subject person who has reduced visibility in blue light. This light-emitting device comprises: a light-emitting element having an emission peak wavelength within a range of 440-470 nm; and a wavelength conversion member including a plurality of fluorescent bodies that are excited by light from the light-emitting element and emit light. In the emission spectrum of the light-emitting device, the ratio of the emission intensity at a wavelength of 480 nm, the ratio of the emission intensity at a wavelength of 530 nm, and the ratio of emission intensity at a wavelength of 550 nm with respect to the emission intensity at an emission peak wavelength derived from the light-emitting element are 0.05-0.20, 0.20-0.35, and 0.23-0.38, respectively.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
F21V 9/38 - Combinaison de plusieurs éléments photoluminescents de matériaux différents
This laser adjustment method comprises: a first preparation step for acquiring, as a first damage image, an image that includes an image of first damage, the image being formed on a first film by irradiating, with first laser light, a first film wafer, which includes a first wafer and a first film provided on the first wafer; a second preparation step for preparing a second film wafer including a second wafer and a second film provided on the second wafer; a machining step for, after the first preparation step and the second preparation step, forming second damage on the second film by irradiating the second film wafer with second laser light; an image-capturing step for, after the machining step, acquiring, as a second damage image, an image that includes an image of second damage by capturing an image of the second film; and an adjustment step for, after the image-capturing step, adjusting an aberration to be given to the second laser light so that the image of second damage included in the second damage image is close to the image of first damage included in the first damage image.
B23K 26/03 - Observation, p. ex. surveillance de la pièce à travailler
B23K 26/062 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples par commande directe du faisceau laser
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p. ex. cloisonnement en zones séparées
83.
WIRING BOARD, PLANAR LIGHT-EMITTING DEVICE, AND PRODUCTION METHODS THEREFOR
[Problem] To provide a wiring board with which it is possible to supress an increase in the types of members in a double-sided board, and to decrease the production time and the number of steps. [Solution] This wiring board production method includes: a step for preparing a substrate 30 having an insulating resin 10 and a metal member 20 which has an anti-rust layer 21 formed on the surface disposed facing a second surface 10B of the insulating resin 10; a step for forming a plurality of first holes 51 that pass through the metal member 20 by etching; a step for forming a second hole 52 that passes through the insulating resin 10 from the first surface 10A side of the insulating resin 10, and communicates with at least one of the first holes 51; and a step for supplying a conductive paste 40 so as to connect the second hole 52 with one of the plurality of first holes 51 and disposing the conductive paste 40 on the first surface 10A of the insulating resin 10 so as to form wiring connected to the supplied conductive paste 40. The anti-rust layer 21 on the surface of the metal member 20 at inner bottom surface 52B of the second hole 52 is removed in the step for forming the second hole 52.
H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
This light source unit (11) comprises: a display device (110) capable of displaying an image; and an image-forming optical system (120) including an input element (121) on which light emitted from the display device (110) is incident and an output element (123) on which light passed through the input element (121) is incident, light emitted from the output element (123) forming a first image (IM1) that corresponds to said image. The image-forming optical system (120) is substantially telecentric on the first image (IM1) side. The light emitted from the display device (110) has a substantially Lambertian light distribution.
B60K 35/00 - Instruments spécialement adaptés aux véhiculesAgencement d’instruments dans ou sur des véhicules
G03B 21/00 - Projecteurs ou visionneuses du type par projectionLeurs accessoires
G03B 21/28 - Réflecteurs dans le faisceau de projection
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
85.
SMFEN-BASED ANISOTROPIC MAGNETIC POWDER AND BONDED MAGNET, AND METHOD FOR PRODUCING SAID POWDER AND MAGNET
Provided are: an SmFeN-based anisotropic magnetic powder which exhibits excellent magnetic characteristics and having a low oxygen content; and a method for producing the same. The method for producing the SmFeN-based anisotropic magnetic powder comprises: a step for preparing a pre-dispersion SmFeN-based anisotropic magnetic powder containing Sm, Fe, La, W, and R (R is at least one selected from the group consisting of Ti, Ba, and Sr); and a step for dispersing the SmFeN-based anisotropic magnetic powder by using metal media that are covered with a resin or ceramic media that are covered with a resin. The SmFeN-based anisotropic magnetic powder contains Sm, Fe, La, W, and R (R is at least one selected from the group consisting of Ti, Ba, and Sr) and has an average particle diameter of 2.0 μm to 4.0 μm, inclusive, a remanent magnetization σr of 152 emu/g or more, and an oxygen content of 0.5% by mass or less.
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 9/20 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques solides
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
H01F 1/06 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p. ex. de poudre
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
86.
METHOD FOR PRODUCING SEMICONDUCTOR NANOPARTICLES, SEMICONDUCTOR NANOPARTICLES, AND LIGHT-EMITTING DEVICE
NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japon)
OSAKA UNIVERSITY (Japon)
NICHIA CORPORATION (Japon)
Inventeur(s)
Torimoto, Tsukasa
Kameyama, Tatsuya
Kuwabata, Susumu
Uematsu, Taro
Kubo, Tomoya
Ikagawa, Yohei
Oyamatsu, Daisuke
Abrégé
Provided is an efficient method for producing semiconductor nanoparticles that exhibit band edge emission. A method for producing semiconductor nanoparticles that includes subjecting a first mixture including a copper salt, a silver salt, a salt including indium and/or gallium, a gallium halide, and an organic solvent to a first heat treatment to obtain first semiconductor nanoparticles, at least one salt of the Cu salt, Ag salt, and salt that includes In and/or Ga in the first mixture including a compound that has a bond between a metal and sulfur (S).
C01G 15/00 - Composés du gallium, de l'indium ou du thallium
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
This lighting device comprises: a light source; a lens on which light output from the light source is incident; and a reflector having multiple first reflection regions and reflecting output light from the lens at the respective first reflection regions in a first direction intersecting with an optical axis of the incident light on the lens. The multiple first reflection regions are arranged in steps such that first reflection regions positioned closer to a light-output side of the reflector in the first direction are distanced farther from the lens in a second direction in which the optical axis extends. Light output from a first part of the lens positioned on the light-output side in the first direction with respect to the optical axis has a light distribution angle smaller than the light distribution angle of light output from a second part of the lens positioned on the opposite side from the light-output side in the first direction with respect to the optical axis.
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21V 5/08 - Réfracteurs pour sources lumineuses produisant une distribution de lumière asymétrique
F21V 7/09 - Structure de l'optique à combinaison des différentes courbures
F21V 9/00 - Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p. ex. filtres
F21V 13/04 - Combinaisons de deux sortes d'éléments uniquement les éléments étant des réflecteurs et des réfracteurs
F21V 13/12 - Combinaisons de trois sortes d'éléments uniquement
G02B 30/33 - Systèmes ou appareils optiques pour produire des effets tridimensionnels [3D], p. ex. des effets stéréoscopiques en fournissant des première et seconde images de parallaxe à chacun des yeux gauche et droit d’un observateur du type autostéréoscopique comprenant des sources de lumière directionnelle ou des sources de rétroéclairage
This optical sheet laminate 100 is incorporated in a backlight unit 40 that uses a white light source 42. The optical sheet laminate 100 comprises: a diffusion sheet 43 provided with, in a first surface 21a, a plurality of recesses 22 each having substantially the shape of an inverted quadrangular pyramid; and a pair of prism sheets 44, 45, the respective prism extension directions thereof being perpendicular to one another. The diffusion sheet 43 is disposed as a single sheet or as a plurality of stacked sheets. The plurality of recesses 22 are arranged in a two-dimensional matrix, and the angle of intersection between the arrangement direction of the recesses 22 and the prism extension directions is 20° to 70°.
Provided is an apparatus for treating a fluid with ultraviolet light, which can have an improved treatment effect. The apparatus for treating a fluid with ultraviolet light is provided with a fluid inflow part, a fluid outflow part, and a flow passage part that connects the inflow part and the outflow part. The flow passage part includes a plurality of branched flow passage sections that branch from the inflow part, and a merging flow passage section that is connected on the downstream side of the plurality of branched flow passage sections. The apparatus is further provided with a first light source that can emit ultraviolet light to the merging flow passage section and a plurality of second light sources that can respectively emit ultraviolet light to the plurality of branched flow passage sections.
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
C02F 1/32 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par irradiation par la lumière ultraviolette
A61L 9/20 - Désinfection, stérilisation ou désodorisation de l'air utilisant des phénomènes physiques des radiations des ultraviolets
90.
LIGHT EMITTING DEVICE, LIGHTING EQUIPMENT, AND STREET LAMP
Provided are a light emitting device, lighting equipment, and a street lamp that emit light which is less likely to adversely affect the behavior of sea turtles while allowing humans to easily see illuminated objects. This light emitting device comprises a light emitting element that has a light-emission peak wavelength in a range from 400 nm to 490 nm, inclusive, and a first fluorescent body that has a light-emission peak wavelength in a range from 570 nm to 680 nm, inclusive. The light emitting device emits light such that: the correlated color temperature is equal to or less than 1950 K; the general color rendering index Ra is 40 or more; in a light emission spectrum of the light emitting device, the full width at half maximum of the light emission spectrum indicating the maximum light emission intensity is 110 nm or less; and an attraction index T for a sea turtle derived from equation (1) is 0.416 or less. Lighting equipment and a street lamp are also provided.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
F21S 8/08 - Dispositifs d'éclairage destinés à des installations fixes avec un support
The present invention addresses the problem of providing a resin component production method that enables efficient bonding of olefin-based polymers or fluorine-based polymers together without using an additive or performing an additional process. As a solution to the problem, a resin component production method comprises: a step for preparing a first resin member containing a polymer and a second resin member containing a polymer; and a step for bonding a first bonding portion of the first resin member and a second bonding portion of the second resin member together. In the step for bonding the first resin member and the second resin member together, the polymer of the first bonding portion is irradiated with laser light having a peak wavelength of 350-420 nm in the presence of oxygen so as to cause multiphoton excitation in the polymer, and the first bonding portion and the second bonding portion are brought into contact with each other.
Provided is a semiconductor laser element having a periodic structure in which a threshold current is reduced. A semiconductor laser element comprising a nitride semiconductor stack having an optical waveguide, the nitride semiconductor stack comprising, in this order: a first n-side nitride semiconductor layer (31) having a periodic structure in which the refraction index is periodically changed along a resonance direction of the optical waveguide; a second n-side nitride semiconductor layer (32); an active layer (40) having one or more well layers and one or more barrier wall layers; and a p-side nitride semiconductor layer (50). The active layer (40) includes, among the one or more well layers, an n-side well layer positioned closest to the second n-side nitride semiconductor layer (32), and, among the one or more barrier wall layers, an n-side barrier wall layer positioned between the n-side well layer and the second n-side nitride semiconductor layer (32). The second n-side nitride semiconductor layer (32) is a nitride semiconductor layer comprising In and Ga. The thickness of the second n-side nitride semiconductor layer (32) is greater than the thickness of the n-side barrier wall layer.
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
Provided are a light-emitting device, lamp, and lighting fixture that emit light that readily promotes melatonin secretion. The light-emitting device, lamp, and lighting fixture are provided with a light-emitting element that has an emission peak wavelength in the range from 400 nm to 490 nm and with a first phosphor that has an emission peak wavelength in the range from 570 nm to 680 nm, and emit light for which: the correlated color temperature is not more than 1950 K, the average color rendering index Ra is at least 40, the full width at half maximum of the emission spectrum that shows the maximum emission intensity in the emission spectrum of the light-emitting device is not more than 110 nm, and the melanopic ratio MR derived from formula (1) is less than or equal to 0.233.
C09K 11/61 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du fluor, du chlore, du brome, de l'iode ou des halogènes non spécifiés
C09K 11/64 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant de l'aluminium
C09K 11/78 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'oxygène
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
F21V 9/20 - Filtres dichroïques, c.-à-d. dispositifs fonctionnant selon le principe de l’interférence entre ondes lumineuses faisant passer des plages de valeurs spécifiques de longueurs d’onde tout en en annulant d’autres
F21V 9/30 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source
F21W 111/02 - Utilisation ou application des dispositifs ou des systèmes d'éclairage pour la signalisation, le balisage ou l'indication, non prévues dans les groupes pour les routes, les chemins ou les voies similaires
An image-forming element according to one embodiment comprises a base material having a first surface, and a reflector array provided on the base material. The reflector array includes a plurality of reflector rows having a plurality of two-surface orthogonal reflectors provided along a first direction. The plurality of reflector rows are arranged in parallel with gaps therebetween in a second direction intersecting the first direction. The plurality of two-surface orthogonal reflectors each include a first reflective surface provided so as to reflect light from the first surface side, and a second reflective surface provided so as to be orthogonal to the first reflective surface and provided so as to reflect reflected light from the first reflective surface to the first surface side. The tilt of the second orthogonal reflectors is set such that an image is formed on the first surface side as referenced to the base material.
G02B 30/56 - Systèmes ou appareils optiques pour produire des effets tridimensionnels [3D], p. ex. des effets stéréoscopiques l’image étant construite à partir d'éléments d'image répartis sur un volume 3D, p. ex. des voxels en projetant une image aérienne ou flottante
G02B 5/00 - Éléments optiques autres que les lentilles
G02B 5/124 - Réflecteurs reflex du type en sommet de cube, en trièdre ou en réflecteur triple plusieurs éléments réfléchissants faisant partie d'une plaque ou d'une feuille formant un tout
G02B 30/60 - Systèmes ou appareils optiques pour produire des effets tridimensionnels [3D], p. ex. des effets stéréoscopiques comprenant uniquement des prismes réflecteurs et des miroirs
This light emission device is provided with a package having three or more light emission elements, a base section having a mounting surface on which the light emission elements are disposed, and side wall sections which are disposed around the light emission elements and include a translucent incidence surface. The three or more light emission elements have: a first light emission element for emitting, along a first optical axis, a first light having an emission peak at a first wavelength; a second light emission element for emitting, along a second optical axis, a second light having an emission peak at a second wavelength; and, a third light emission element for emitting, along a third optical axis, a third light having an emission peak at a third wavelength. The angle between the first optical axis and the second optical axis in a top view is 3° to 45°, inclusive. The distance between the first optical axis and the second optical axis increases as the first light and the second light respectively travel along the first optical axis and the second optical axis. The first light, the second light, and the third light are incident on the incidence surface.
H01S 5/0233 - Configuration de montage des puces laser
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
H01S 5/0239 - Combinaisons d’éléments électriques ou optiques
96.
SMFEN-BASED ANISOTROPIC MAGNETIC POWDER, BONDED MAGET, METHOD FOR PRODUCING SAID SMFEN-BASED ANISOTROPIC MAGNETIC POWDER, AND METHOD FOR PRODUCING SAID BONDED MAGET
The present invention provides: an SmFeN-based anisotropic magnetic powder which exhibits excellent magnetic characteristics, while having a low oxygen content; and a method for producing this SmFeN-based anisotropic magnetic powder. The present invention provides a method for producing an SmFeN-based anisotropic magnetic powder, the method comprising: a step for preparing an SmFeN-based anisotropic magnetic powder before dispersion, the powder containing Sm, Fe and N; and a step for dispersing the SmFeN-based anisotropic magnetic powder before dispersion with use of metal media that are covered with a resin or ceramic media that are covered with a resin. The present invention also provides an SmFeN-based anisotropic magnetic powder which contains Sm, Fe and N, while having an average particle diameter of 2.5 μm to 5 μm, a remanent magnetization σr of 150 emu/g or more, and an oxygen content of 0.4% by mass or less.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/142 - Traitement thermique ou thermomécanique
B22F 3/00 - Fabrication de pièces ou d'objets à partir de poudres métalliques, caractérisée par le mode de compactage ou de frittageAppareils spécialement adaptés à cet effet
B22F 9/20 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques solides
C22C 28/00 - Alliages à base d'un métal non mentionné dans les groupes
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
97.
LIGHT-EMITTING MATERIAL AND METHOD FOR PRODUCING SAME
Provided is a light-emitting material that includes a fluorescent material that emits bright red light. This light-emitting material includes a fluoride fluorescent material having a first composition that contains: an alkali metal comprising K; Si; Al; Mn; and F. If the total number of moles of the alkali metal in the first composition is 2, the total number moles of Si, Al and Mn is 0.9-1.1, the number of moles of Al is more than 0 but not more than 0.1, the number of moles of Mn is more than 0 but not more than 0.2, and the number of moles of F is not less than 5.5 but less than 6.0. The fluoride fluorescent material has a cubic crystal structure, and has a lattice constant of 0.8138 nm or more.
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/61 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du fluor, du chlore, du brome, de l'iode ou des halogènes non spécifiés
C09K 11/64 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant de l'aluminium
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
98.
FLUORIDE FLUORESCENT BODY, METHOD FOR PRODUCING SAME, AND LIGHT EMISSION APPARATUS
Provided is a fluoride fluorescent body capable of improving the reliability thereof in a light emission apparatus. This fluoride fluorescent body includes fluoride particles and an oxide that at least partially covers the surfaces of the fluoride particles. The oxide includes at least one element selected from the group consisting of Si, Al, Ti, Zr, Sn, and Zn at a percentage content of 2-30 mass%. The fluoride particles each have a compositional makeup containing: an element M including at least one selected from the group consisting of group-4 elements, group-13 elements, and group-14 elements; an alkali metal; Mn; and F. When the mol number of the alkali metal is set to 2, the mol number of Mn is more than 0 but less than 0.2, the mol number of the element M is more than 0.8 but less than 1, and the mol number of F is more than 5 but less than 7.
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/61 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du fluor, du chlore, du brome, de l'iode ou des halogènes non spécifiés
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
C09K 11/63 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du bore
C09K 11/64 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant de l'aluminium
C09K 11/65 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du carbone
C09K 11/66 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du germanium, de l'étain ou du plomb
C09K 11/67 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux réfractaires
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
Provided is an oxide phosphor having an emission peak wavelength of 800 nm or more. This oxide phosphor has a composition which contains Mg, Ga, O and Cr and which may, if necessary, contain a first element M1, a second element M2and a third element M3. If the total molar ratio of Ga, Cr, the second element M2and the third element M3is 2 relative to 1 mole of the composition of the oxide phosphor, the molar ratio of Mg or the total molar ratio of Mg and the first element M1 falls within the range 0.7-1.3, the molar ratio of O falls within the range 3.7-4.3, and the molar ratio of Cr falls within the range of more than 0.02 and not more than 0.3. The oxide phosphor has an emission peak wavelength within the range 800-1600 nm in an emission spectrum.
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/59 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du silicium
C09K 11/61 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du fluor, du chlore, du brome, de l'iode ou des halogènes non spécifiés
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
C09K 11/64 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant de l'aluminium
C09K 11/66 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du germanium, de l'étain ou du plomb
C09K 11/67 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux réfractaires
C09K 11/73 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore contenant aussi des halogènes, p. ex. des halophosphates contenant aussi des métaux alcalino-terreux
C09K 11/79 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant du silicium
C09K 11/80 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'aluminium ou du gallium
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
A light source device (100) is provided with: a substrate (10) having a support surface (10A); a first sub-mount (20) having a first upper surface (20A) and a first mounting surface (20B) opposing the support surface (10A); one or more laser diodes (30) positioned between the substrate (10) and the first sub-mount (20) and having a p-side electrode surface (30B) and an n-side electrode surface (30A); a side wall section (15) provided on the substrate (10), having a second upper surface (15A) and an inner wall surface (15C), and defining by the inner wall surface (15C) a space (V) in which the laser diode (30) is housed; a heat dissipation member (60) provided on the first sub-mount (20); and, a metal member (50) joined to the heat dissipation member (60) and the second upper surface (15A) to seal the space (V). The height from the support surface (10A) to the first upper surface (20A) is different from the height from the support surface (10A) to the second upper surface (15A). One of the p-side electrode surface (30B) and the n-side electrode surface (30A) is directly or indirectly joined to the support surface (10A). The other of the p-side electrode surface (30B) and the n-side electrode surface (30A) is joined to the first mounting surface (20B).
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