A fluid sterilizing apparatus includes a first optoelectronic element, a first optoelectronic element for emitted light, and a first optoelectronic element for reflected light; an optoelectronic element for transmitted light disposed to face the first optoelectronic element, the first optoelectronic element for emitted light, and the first optoelectronic element for reflected light; a chamber including an inner space that allows passage of a fluid to be irradiated with ultraviolet light emitted from the first optoelectronic element; a first light-transmitting member; and a control unit including a processor configured to control emission of the ultraviolet light from the first optoelectronic element upon receiving a first reflected light reception signal, a first emitted light reception signal, and a first transmitted light reception signal.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
A61L 2/24 - Appareils utilisant des opérations programmées ou automatiques
A light-emitting device includes: first and second electroconductive members spaced apart; a light-emitting element having a rectangular shape in top view and including a semiconductor layered body, a first electrode, and a second electrode; a first bonding member bonding the first electroconductive member and the first electrode; and a second bonding member bonding the second electroconductive member and the second electrode. The upper surface of the first electroconductive member includes a first flat portion and a first recessed portion in a vicinity of the first electrode and depressed from the first flat portion. The first recessed portion includes a first portion including a portion overlapping an outer periphery of the first electrode, and a second portion not overlapping the outer periphery. A portion of the first bonding member is in a first exposed region between the second portion and the first corner portion and exposed from the light-emitting element.
A fluoride phosphor includes fluoride particles and a phosphate disposed on at least a part of a surface of the fluoride particles. The phosphate contains at least zinc in its composition. The fluoride particles have a composition containing an alkali metal, Mn, F, and an element M that includes at least one element selected from the group consisting of Group 4 elements, Group 13 elements, and Group 14 elements, and wherein in the composition of the fluoride particles, when the number of moles of the alkali metal is 2, the number of moles of Mn is greater than 0 and less than 0.2, the number of moles of the element M is greater than 0.8 and less than 1, and the number of moles of F is greater than 5 and less than 7.
C09K 11/72 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du phosphore contenant aussi des halogènes, p. ex. des halophosphates
H10H 20/851 - Moyens de conversion de la longueur d’onde
A fluoride phosphor containing: manganese; fluorine; an element M including at least one selected from the group consisting of Group 4 elements, Group 13 elements, and Group 14 elements; and at least one selected from the group consisting of an alkali metal and an ammonium ion. When the total number of moles of the alkali metal and the ammonium ion is 2, the number of moles of the manganese is greater than 0 and less than 0.2, the total number of moles of the element M is greater than 0.8 and less than 1, and the number of moles of the fluorine is greater than 5 and less than 7. The fluoride phosphor has a particle diameter ratio (Da/Dm) that is 0.85 or greater, where Da is a mean particle diameter measured by a FSSS method, and Dm is a volume median diameter measured by a laser diffraction particle size distribution measurement method.
C09K 11/61 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du fluor, du chlore, du brome, de l'iode ou des halogènes non spécifiés
C01B 33/10 - Composés contenant du silicium, du fluor et d'autres éléments
H10H 20/851 - Moyens de conversion de la longueur d’onde
A semiconductor light emitting element includes a GaN substrate; a first nitride semiconductor portion containing an n-type impurity and located on the substrate; a second nitride semiconductor portion containing an n-type impurity and located on the first nitride semiconductor portion; and a third nitride semiconductor portion containing an n-type impurity and located on the second nitride semiconductor portion. An n-type impurity concentration of the first nitride semiconductor portion is higher than that of the third nitride semiconductor portion, and an n-type impurity concentration of the second nitride semiconductor portion is higher than that of the third nitride semiconductor portion. An Al composition ratio of the second nitride semiconductor portion is higher than that of the first nitride semiconductor portion, and an Al composition ratio of the third nitride semiconductor portion is higher than that of the first nitride semiconductor portion.
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
A light-emitting device includes a plurality of semiconductor laser elements including a plurality of first color-light-emitting laser elements that emit red light, and a plurality of second color-light-emitting laser elements that emit green light. The first color-light-emitting laser elements include R types of semiconductor laser elements (where R is a natural number and R ≥ 3) from a first type to an R-th type semiconductor laser elements, with a type with a larger ordinal number having a shorter emission peak wavelength. The second color-light-emitting laser elements include V types of semiconductor laser elements (where V is a natural number and 2 ≤ V ≤ (R-1)) from a first type to a V-th type semiconductor laser elements, with a type with a larger ordinal number having a shorter emission peak wavelength.
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/323 - Structure ou forme de la région activeMatériaux pour la région active comprenant des jonctions PN, p. ex. hétérostructures ou doubles hétérostructures dans des composés AIIIBV, p. ex. laser AlGaAs
H01S 5/02253 - Découplage de lumière utilisant des lentilles
A light emitting device includes: light emitting elements each having first and second electrodes, and emitting light in a first direction; a base having first to third element side wiring parts, and first to third power supply side wiring parts, electrically connected to these element side wiring parts, on which the light emitting elements are lined up in a second direction; and first and second wires electrically connected to the light emitting elements on the first electrode side, and a third wire electrically connected to the light emitting elements on the second electrode side. The first and second element side wiring parts are positioned apart from the light emitting elements in the positive second direction, the third element side wiring part is positioned apart from the light emitting elements in the negative second direction. The first to third wires are bonded to the first to third element side wiring parts.
A light-emitting device includes: a light source configured to emit laser light; a lens configured to collimate the laser light; and a light-reflecting part having a plurality of reflecting surfaces disposed at intervals in a traveling direction of collimated light transmitted through the lens, the plurality of reflecting surfaces being configured to reflect the collimated light in an intersecting direction to the traveling direction, such that a beam diameter of reflected light reflected off the plurality of reflecting surfaces is greater than a beam diameter of the collimated light.
A light-emitting element includes: a first semiconductor portion including a first n-side semiconductor layer, a first active layer disposed on the first n-side semiconductor layer and configured to emit ultraviolet light, and a first p-side semiconductor layer disposed on the first active layer; and a second semiconductor portion including a second n-side semiconductor layer disposed on the first semiconductor portion, a second active layer disposed on the second n-side semiconductor layer and configured to emit ultraviolet light, and a second p-side semiconductor layer disposed on the second active layer. The first p-side semiconductor layer includes a first layer containing Al and a second layer disposed on the first layer and containing Al and a p-type impurity. The second p-side semiconductor layer includes a third layer containing Al and a fourth layer disposed on the third layer and containing Al and a p-type impurity.
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
H10H 20/811 - Corps ayant des structures ou des superréseaux à effet quantique, p. ex. jonctions tunnel
A light-emitting device includes: a support body including: a substrate, and a plurality of conductive members supported by the substrate, the plurality of conductive members including a first conductive part, wherein: the support body has a first recess in an upper surface of the support body; a first light-emitting element disposed on the support body; an integrated circuit extending in a first direction and a second direction orthogonal to the first direction in a top view, the integrated circuit disposed on the support body such that the integrated circuit and the first light-emitting element are in a row in the first direction; a joining member disposed between the support body and the integrated circuit and joining the support body and the integrated circuit; and a first wire connected to the first conductive part and to the integrated circuit.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A cap has a recess configured to accommodate a laser diode and includes: a front wall that defines a front side of the recess, at least a portion of the front wall being formed of a material that transmits laser light to be emitted from the laser diode; a rear wall that defines a rear side of the recess, the rear wall being opposed to the front wall; a main body that that defines an upper side and lateral sides of the recess defining a cavity and is connected to the front wall and the rear wall; and an antireflection coating provided on a surface of the front wall. Lower end surfaces, respectively, of the front wall, the rear wall, and the main body define a bonding surface of the cap.
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
A light-emitting device having a base member including a first surface, a second surface located at a side opposite to the first surface, a third surface connecting the first and second surfaces, and a recess opening to the second and third surfaces. A length of the first surface in a first direction is longer than a length thereof in a second direction orthogonal to the first direction. The light-emitting device further includes first, second, third and fourth wiring parts on the first surface, a first light-emitting element on the first wiring part and the third wiring part, and a second light-emitting element on the second wiring part and the fourth wiring part. A light emission peak wavelength of the second light-emitting element is different from a light emission peak wavelength of the first light-emitting element. The first and second light-emitting elements are arranged along the second direction.
A method of manufacturing a light-emitting device includes heating, to a first temperature, semiconductor light-emitting elements including electrodes each including a portion formed of a first metal and a substrate including connection terminals each including a portion formed of the first metal; press-bonding the portion of the electrode to the portion of the connection terminal with a first pressure to form an intermediate body; and applying a second pressure between the substrate and the semiconductor light-emitting elements to bring the intermediate body to a second temperature and cooling the intermediate body. The electrode or the connection terminal further includes a metal multilayer film including portions formed of second and third metals. The first temperature is lower than a solidus temperature of the second metal, and the second temperature is the solidus temperature of the second metal or greater and a liquidus temperature of the second metal or less.
A light-emitting element includes: a semiconductor structure including: an n-side semiconductor layer, an active layer disposed on the n-side semiconductor layer, and a p-side semiconductor layer disposed on the active layer, wherein: a first opening extends through the active layer and the p-side semiconductor, and the n-side semiconductor layer is exposed from the active layer and the p-side semiconductor layer by the first opening; a first insulating film disposed on the semiconductor structure, wherein a second opening extends through the first insulating film at a position overlapping the first opening in a plan view; and n-side wiring including: a first metal layer contacting the n-side semiconductor layer via the second opening, a second metal layer disposed on the first metal layer, and a third metal layer disposed on the second metal layer.
H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
H10H 20/821 - Corps caractérisés par leur forme particulière, p. ex. substrats incurvés ou tronqués des régions électroluminescentes, p. ex. jonctions du type non planaire
H10H 20/84 - Revêtements, p. ex. couches de passivation ou revêtements antireflets
A light-emitting device includes: a first substrate having a first upper surface; light-emitting elements; a second substrate; a wire; a first dam structure surrounding the light-emitting elements; and an insulating member disposed outward of the first dam structure in a top view and having an inner end portion. In a cross section, when a distance between a straight line passing through the inner end portion and perpendicular to the first upper surface and a straight line passing through an outer end portion of an outermost light-emitting element and perpendicular to the first upper surface is defined as a first distance A, and a distance, in a height direction, between a top portion of the insulating member and a plane of the first upper surface is defined as a second distance B, the first distance A and the second distance B satisfy 0.1×B≤A≤B.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
H10H 29/851 - Moyens de conversion de la longueur d’onde
H10H 29/853 - Encapsulations caractérisées par leur forme
16.
BONDED MAGNET, ON-VEHICLE MAIN MOTOR AND OIL PUMP COMPRISING BONDED MAGNET, CURABLE COMPOSITION FOR BONDED MAGNET, AND METHOD FOR PRODUCING BONDED MAGNET
A bonded magnet for use in applications in which the bonded magnet is immersed in or in contact with an oil, the bonded magnet including a cured product of a curable composition comprising: a magnetic powder; at least one epoxy resin that is at least one of a phenol novolac-type epoxy resin, a cresol novolac-type epoxy resin, or a triphenylmethane-type epoxy resin; and at least one phenolic resin-based curing agent that is at least one of a novolac-type phenolic resin, a cresol novolac-type phenolic resin, or a triphenylmethane-type phenolic resin.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
17.
LIGHT-EMITTING MODULE, METHOD OF MANUFACTURING WIRING SUBSTRATE, AND METHOD OF MANUFACTURING LIGHT-EMITTING MODULE
A light-emitting module includes one or more light-emitting devices, and a wiring substrate. Each of the light-emitting devices includes light-emitting elements, and a package including a lower surface having a wiring region. The wiring substrate includes a metal portion, an electrode portion, and an insulating portion, and defines one or more first through holes. The mounting surface of the wiring substrate includes a first region where the metal portion defines an uppermost surface, a second region where the electrode portion defines an uppermost surface, and a third region where the insulating portion defines an uppermost surface. The first region and the second region are separated from each other by the third region. A boundary of each of the first through holes is defined in the first region. The wiring region of each of the light-emitting devices is bonded to the electrode portion of the wiring substrate.
H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
18.
LASER WELDING METHOD, LASER WELDING SYSTEM, AND METAL JOINT
Provided is a laser welding method of welding a metal material and a plurality of metal foils together by irradiation with laser light, the laser welding method including: a first step of compressing, in a layering direction, the plurality of metal foils that have been layered; and a second step of joining the metal material and the plurality of metal foils together by irradiating the plurality of metal foils or the metal material with laser light and forming a welded portion that penetrates the plurality of metal foils in the layering direction and is present within the metal material.
A method of manufacturing a metal structure for an optical semiconductor device, including a treatment step (1) of immersing in and/or applying the solution containing a polyallylamine polymer a base body, the base body including an outermost layer at a portion or entire surfaces of the base body, the outermost layer including a plating of at least one selected from the group consisting of gold, silver, a gold alloy, and a silver alloy, so as to manufacture the metal structure for an optical semiconductor device having an increased adhesion to a resin material.
A wavelength beam combining device includes: a plurality of laser light sources configured to emit a plurality of laser beams in a first direction and having mutually different peak wavelengths and central axes arranged in a second direction intersecting the first direction; a first diffraction grating disposed at a position where the plurality of laser beams are received, the first diffraction grating being configured to diffract the plurality of laser beams in different directions according to wavelengths of the laser beams to cause the diffracted laser beams to enter the second diffraction grating; a second diffraction grating configured to diffract the plurality of laser beams diffracted by the first diffraction grating to form a wavelength-combined beam, and to direct the wavelength-combined beam in the first direction; and an optical coupling unit configured to couple the wavelength-combined beam to an optical transmission fiber and to be movable in the second direction.
A light-emitting device includes first and second conductive members, first and second bonding members, and a light-emitting element thereon and extending over the conductive members. The light-emitting element includes a light-emitting portion, first and second electrodes on a lower surface thereof, and a light-reflective covering member covering the conductive members, the bonding members, and the light-emitting element with lower surfaces of the conductive members exposed. The first electrode includes a first portion contacting the light-emitting portion and the first bonding member, and a second portion closer to the second electrode than the first portion and contacting the light-emitting portion. The second portion has a lower surface above that of the first portion. In cross-section, a thickness of the second portion is greater than the light-emitting portion, and a first distance between the second portion and the second electrode is shorter than a second distance between the conductive members.
A light source device includes: first to third semiconductor laser elements configured to respectively emit first to third laser beams of first to third colors different from one another; a lens configured to collimate the first to third laser beams; a housing having an opening through which the first to third laser beams transmitted through the lens pass and containing the first to third semiconductor laser elements and the lens; and a light-transmissive member covering the opening, having a second light incident surface and a second light exit surface, and allowing the first to third laser beams to pass therethrough. The light-transmissive member has first and second diffraction gratings on the second light incident surface to deflect the third and second laser beams so that their optical axes come closer to an optical axis of the first laser beam than before passing through the second light incident surface.
G02B 1/00 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques
G02B 3/04 - Lentilles simples ou composées à surfaces non sphériques à surfaces continues engendrées par une rotation autour d'un axe, mais s'écartant d'une véritable sphère
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
G02B 27/10 - Systèmes divisant ou combinant des faisceaux
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
23.
LIGHT-EMITTING DEVICE, HEADLIGHT, AND VEHICLE EQUIPPED WITH SAME
A light emitting device comprises: a light emitting element having a light emission peak wavelength in a range of 400 nm or more and 490 nm or less; and a wavelength conversion member including a first fluorescent material having a light emission peak wavelength in a range of 480 nm or more and less than 580 nm and a second fluorescent material having a light emission peak wavelength in a range of 580 nm or more and 680 nm or less and having a composition different from that of the first fluorescent material. The light emitting device emits light having a first luminance ratio Ls/L of 0.9 or less, the first luminance ratio Ls/L being a ratio of a first effective radiance Ls of the light emitted by the light emitting device in consideration of a spectral luminous efficiency curve for photopic vision of humans specified by CIE and the S-cone spectral sensitivity of humans, to a luminance L of the light emitted by the light emitting device in consideration of the spectral luminous efficiency curve for photopic vision of humans. The first fluorescent material comprises a rare earth aluminate fluorescent material having a composition represented by formula (1A).
F21S 41/176 - Sources lumineuses où la lumière est générée par un matériau photoluminescent espacé par rapport à un élément générateur de lumière primaire
F21S 41/143 - Diodes électroluminescentes [LED] la direction principale d’émission des LED étant parallèle à l’axe optique du dispositif d’éclairage
A lens includes: a first light-transmissive portion including a light incident surface and a light exiting surface located at a side opposite to the light incident surface. The first light-transmissive portion has a through hole extending from the light incident surface to the light exiting surface. At least one of the light incident surface or the light exiting surface includes: an annular convex surface or an annular concave surface, and at least one annular protrusion surrounding the through hole in a top view.
G02B 3/08 - Lentilles simples ou composées à surfaces non sphériques à surfaces discontinues, p. ex. lentille de Fresnel
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
H10H 29/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
25.
METHOD FOR PRODUCING NICKEL COBALT COMPOSITE OXIDE, NICKEL COBALT COMPOSITE OXIDE, POSITIVE ELECTRODE ACTIVE MATERIAL, POSITIVE ELECTRODE FOR ALL-SOLID-STATE LITHIUM ION SECONDARY BATTERY
Provided is a positive electrode for an all-solid-state lithium ion secondary battery which can reduce the internal resistance of the all-solid-state lithium ion secondary battery. The positive electrode includes an active material layer containing a positive electrode active material and a solid electrolyte material. The positive electrode active material contains secondary particles comprising an aggregate of a plurality of primary particles containing a lithium transition metal composite oxide. A smoothness of the secondary particles is more than 0.73, and a degree of circularity of the secondary particles is more than 0.83.
C01G 53/50 - Oxydes complexes contenant du nickel et au moins un autre élément métallique contenant des métaux alcalins, p. ex. LiNiO2 contenant du manganèse du type (MnO2)n-, p. ex. Li(NixMn1-x)O2 ou Li(MyNixMn1-x-y)O2
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
26.
POSITIVE ELECTRODE ACTIVE MATERIAL AND POSITIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY
Provided is a positive electrode active material which inhibits a decrease in discharge capacity while improving output in a low SOC region. The positive electrode active material includes: first particles that each consist of a first lithium transition metal composite oxide, the first lithium transition metal composite oxide having a layered structure and having a ratio of a number of moles of nickel to a total number of moles of metals other than lithium in a composition thereof being 0.7 or greater and smaller than 1; second particles that have a volume average particle diameter smaller than a volume average particle diameter of the first particles, the second particles each consisting of a second lithium transition metal composite oxide having a layered structure; and third particles that each consist of a third lithium transition metal composite oxide, the third lithium transition metal composite oxide having a layered structure, having a ratio of number of moles of nickel to total number of moles of metals other than lithium in a composition thereof being 0.4 to 0.6, and having a ratio of a number of moles of cobalt to the total number of moles being 0.35 to 0.55. The first particle content is 60 mass % or higher and lower than 100 mass %, and the third particle content is 10 mass % or lower, to a total content of the first particles, the second particles, and the third particles.
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p. ex. LiTi2O4 ou LiTi2OxFy
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
27.
LIGHT SOURCE MODULE AND ULTRAVIOLET LIGHT FLUID PROCESSING DEVICE
A light source module includes a substrate, light sources positioned on an upper surface of the substrate, and an optical member including light control parts and positioned above the substrate such that the light sources are arranged between the substrate and the optical member.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
A61L 9/20 - Désinfection, stérilisation ou désodorisation de l'air utilisant des phénomènes physiques des radiations des ultraviolets
C02F 1/32 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par irradiation par la lumière ultraviolette
28.
LIGHT SOURCE MODULE AND ULTRAVIOLET LIGHT FLUID PROCESSING DEVICE
A light source module includes a substrate, light sources positioned on an upper surface of the substrate, and an optical member including light control parts and positioned above the substrate such that the light sources are located between the substrate and the optical member.
A61L 2/10 - Procédés ou appareils de désinfection ou de stérilisation de matériaux ou d'objets autres que les denrées alimentaires ou les lentilles de contactAccessoires à cet effet utilisant des phénomènes physiques des radiations des ultraviolets
29.
PLANAR LIGHT SOURCE AND THE METHOD OF MANUFACTURING THE SAME
A planar light source includes light sources, an insulating base, a wiring layer, a light reflective member, and conducting members. The light sources each has electrodes extending on one face and a light adjusting member disposed on another face. The insulating base has a first side at which the light sources are located, and a second side on which the wiring layer is disposed. The light reflective member is located at the first side relative to the insulating base and defines first through holes at positions aligned with the electrodes, an opening of each of the first through holes not running over an outline of the light source. The conducting members are disposed in the first through holes and electrically connecting the electrodes to the wiring layer. The one face of each of the light sources has a region located between the electrodes and facing the light reflective member.
F21K 9/68 - Détails des réflecteurs faisant partie de la source lumineuse
F21Y 105/16 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la forme d’ensemble du réseau bidimensionnel carrée ou rectangulaire, p. ex. pour les panneaux de lumière
30.
IMAGE DISPLAY DEVICE MANUFACTURING METHOD AND IMAGE DISPLAY DEVICE
An image display device includes: a light-transmitting substrate including a first surface; a circuit element on the first surface; a first wiring layer located on the circuit element and electrically connected to the circuit element; a first insulating film covering the circuit element and the first wiring layer on the first surface; a first plug located on the first insulating film and electrically connected to the first wiring layer; a first light-emitting element located on the first plug, electrically connected to the first plug, and including a light-emitting surface on a surface at a side opposite to a surface on a first insulating film side; a second insulating film covering at least a portion of the first light-emitting element, the first insulating film, and the first plug; and a second wiring layer located on the second insulating film and electrically connected to the light-emitting surface of the first light-emitting element.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H10H 20/82 - Surfaces rugueuses, p. ex. à l’interface entre les couches épitaxiales
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
31.
ALPHA-FE-CONTAINING RARE EARTH-IRON-BASED MAGNETIC POWDER, PRODUCTION METHOD THEREOF, MAGNETIC MATERIAL FOR MAGNETIC FIELD AMPLIFICATION, AND MAGNETIC MATERIAL FOR HYPER-HIGH FREQUENCY ABSORPTION
The present disclosure relates to an α-Fe-containing rare earth-iron-based magnetic powder including: a core region containing a rare earth R and Fe, where R represents at least one selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Sm; an α-Fe-containing region located outside the core region and containing α-Fe and at least one selected from the group consisting of oxides, nitrides, and oxynitrides of the rare earth R; and an iron oxide-containing region located outside the α-Fe-containing region and containing magnetite or maghemite.
B22F 1/16 - Particules métalliques revêtues d'un non-métal
B22F 1/142 - Traitement thermique ou thermomécanique
B22F 1/145 - Traitement chimique, p. ex. passivation ou décarburation
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
A light-emitting element includes a substrate, a semiconductor structure body, an n-electrode, a p-electrode, an n-pad electrode, and a p-pad electrode. The semiconductor structure body includes an n-type semiconductor layer including first and second regions. The n-electrode includes first to third n-electrode regions. The p-electrode includes first to third p-electrode regions. The first region includes first to fourth parts. The first part is positioned between the first n-electrode region and the third p-electrode region. The second part is positioned between the second n-electrode region and the third p-electrode region. The third part is positioned between the first p-electrode region and the third n-electrode region. The fourth part is positioned between the second p-electrode region and the third n-electrode region. A first trench that is recessed downward is located in the first and second parts. The first trench is not located in the third part.
A semiconductor laser element includes: a semiconductor layered portion including first and second semiconductor layer portions respectively including first and second conductivity-type semiconductor layers, and an active layer between them; a ridge in the semiconductor layered portion; and a diffraction grating. One end surface of the semiconductor laser element serves as a light-emitting surface. The ridge includes, a first ridge, and a second ridge including a first protective film on the semiconductor layered portion and located at a light-emitting surface side in a top view. The diffraction grating is located between the second semiconductor layer portion and the first protective film and has a periodic structure alternately including parts of the second semiconductor layer portion and the first protective film. In a top view, an outer periphery of the first protective film excluding the light-emitting surface side and a boundary between the first and second ridges is located between outer peripheries of the second ridge and the diffraction grating.
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
34.
VEHICLE LIGHT SOURCE DEVICE AND VEHICLE LIGHTING FIXTURE
A vehicle light source device includes: a plurality of light sources arranged in two rows and n columns, wherein n is a natural number of 4 or greater, the plurality of light sources including: a plurality of first light sources arranged in a row direction in a first row, each of the first light sources comprising a first light emitting element and a first light transmissive member arranged on the first light emitting element, and a plurality of second light sources arranged in the row direction in a second row, each of the second light sources comprising a second light emitting element and a second light transmissive member arranged on the second light emitting element.
F21S 41/176 - Sources lumineuses où la lumière est générée par un matériau photoluminescent espacé par rapport à un élément générateur de lumière primaire
F21S 41/153 - Diodes électroluminescentes [LED] disposées sur une ou plusieurs lignes disposées dans une matrice
An oxide phosphor has a composition represented by the following formula (1).
An oxide phosphor has a composition represented by the following formula (1).
An oxide phosphor has a composition represented by the following formula (1).
wherein M1 represents one or more selected from Na, K, Rb, and Cs, M2 represents one or more selected from Mg, Ca, Sr, and Ba, M3 represents one or more selected from Al, Sc, and In, M4 represents one or more selected from Si, Ti, Zr, Sn, and Hf, M5 represents one or more selected from Ni, Ce, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb, 0≤q≤0.5, 0≤r≤1.0 0≤s≤4.0, 0≤t≤1.0, 5≤u≤10, 0≤v≤1.0, 0.5≤w≤5.0, 10≤x≤30, and y and z satisfy 0.02≤y≤0.5, 0≤z≤0.3, and y>z.
H10H 20/851 - Moyens de conversion de la longueur d’onde
C09K 11/68 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux réfractaires contenant du chrome, du molybdène ou du tungstène
A light-emitting device includes: a base having a mounting surface; a plurality of semiconductor laser elements each configured to emit a laser beam from a light emission surface in a first direction, which are arranged on the mounting surface in a second direction; a plurality of first mirror members each having a first reflective surface configured to reflect the laser beam emitted from a corresponding one of the plurality of semiconductor laser elements to change a travel direction of the laser beam into a direction away from the mounting surface; a cover configured to transmit the laser beams reflected by the first reflective surfaces; and at least one second mirror member arranged on an upper surface of the cover, and having a second reflective surface configured to reflect the laser beams transmitted through the cover to further change the travel directions of the laser beams.
A light emitting device includes a first light emitting element, second light emitting elements, and third light emitting elements, a base including first to fourth wiring parts, and wires. The first, second, and third wiring parts is connected to one of the two electrodes of the first, second and third light emitting elements, respectively. The fourth wiring part is connected to the other of the two electrodes. A first current path is formed between the first wiring part and the fourth wiring part to be taken by the first light emitting element. A second current path is formed between the second wiring part and the fourth wiring part to be taken by the second light emitting elements. A third current path is formed between the third wiring part and the fourth wiring part to be taken by the third light emitting elements.
A method for manufacturing an optical member includes: preparing a first light-transmissive member and a first molded body made of an inorganic material and surrounding at least one or more lateral surfaces of the first light-transmissive member; firing the first molded body at a first temperature to obtain a first light-reflective member; bonding an upper surface of the first light-transmissive member to a lower surface of a second light-transmissive member; forming, on an upper surface of the first light-reflective member, a second molded body made of an inorganic material and surrounding at least one or more lateral surfaces of the second light-transmissive member; and firing the second molded body at a second temperature lower than the first temperature to obtain a second light-reflective member.
C04B 35/10 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxyde d'aluminium
H10H 20/851 - Moyens de conversion de la longueur d’onde
C04B 35/115 - Produits translucides ou transparents
C04B 38/00 - Mortiers, béton, pierre artificielle ou articles de céramiques poreuxLeur préparation
A method for manufacturing a ceramic sintered body substrate includes preparing a ceramic substrate 1 provided with a through hole 2 before firing (S11), disposing a first metal paste 3 in the through hole (S12), and firing the ceramic substrate provided with the first metal paste (S14). In the disposing of the first metal paste, the first metal paste includes a plurality of particles of first metal powder (4) and a plurality of particles of active metal powder (50), and the first metal powder includes a metal powder (4a) serving as a core, and a covering metal member (40b) having a melting point lower than a melting point of the metal powder and covering at least a part of the metal powder, and in the firing of the ceramic substrate, a firing temperature is a temperature in a range from 700° C. to less than the melting point of the metal powder.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
To provide a light emitting device having a good color rendering property and a specific melanopic ratio.
To provide a light emitting device having a good color rendering property and a specific melanopic ratio.
A light emitting device includes a light emitting element, and a fluorescent member including a phosphor. The light emitting device satisfies any of Condition (A): a correlated color temperature of light emission of the light emitting device is within a range of 4500 K or more and 7500 K or less, a content of a first phosphor is within a range of 29 mass % or more and 90 mass % or less, and a melanopic ratio is within a range of 1.0 or more and 1.4 or less; Condition (B): a correlated color temperature of light emission of the light emitting device is within a range of 2500 K or more and less than 4500 K, a content of a first phosphor is within a range of 25 mass % or more and 90 mass % or less, and a melanopic ratio is within a range of 0.7 or more and 1.1 or less; and Condition (C): a correlated color temperature of light emission of the light emitting device is within a range of 2500 K or more and 3000 K or less, a content of a first phosphor is within a range of 20 mass % or more and 90 mass % or less, and a melanopic ratio is within a range of 0.48 or more and 1.10 or less.
A light emitting device includes: a semiconductor light emitting element; and a package that seals the semiconductor light emitting element. The package includes a base and a cover bonded to the base, the base having: a first upper surface region directly or indirectly supporting the semiconductor light emitting element, and a second upper surface region surrounding the first upper surface region in a plan view as viewed in a direction normal to the first upper surface region. The second upper surface region is positioned above the first upper surface region. The base of the package includes one or more base-side metal layers positioned on the second upper surface region of the base.
A light-emitting device includes a substrate, a light-emitting element, a protective element, a light-transmissive member, and an adhesive member. The light-emitting element includes a support substrate and a semiconductor structure. The support substrate has a first lateral surface. The semiconductor structure is disposed on a lower surface of the support substrate. The light-emitting element is disposed such that a surface on a lower surface side of the light-emitting element faces an upper surface of the substrate. The protective element is disposed on the substrate such that the protective element faces the first lateral surface. The adhesive member bonds an upper surface of the support substrate and a lower surface of the light-transmissive member while covering the first lateral surface. An upper end of the first lateral surface is located at a greater distance from the protective element than a lower end of the first lateral surface is.
An end-capped optical fiber includes: an optical fiber including a first portion comprising a first core and a first cladding surrounding the first core, and a second portion comprising a second core and a second cladding surrounding the second core; and an end cap comprising a first face connected to an end face of the second portion and a second face located on a side opposite the first face, wherein: a diameter of the first core is constant along an optical axis of the first core; a diameter of the second core gradually increases toward the end cap; the end cap includes a convex lens; the second surface includes a convex lens surface of the convex lens; and a focal point of the convex lens is located inside the optical fiber and away from the end face of the second portion.
G02B 6/27 - Moyens de couplage optique avec des moyens de sélection et de réglage de la polarisation
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c.-à-d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
A method of manufacturing a light-emitting device includes: preparing a light-emitting element; preparing a light-transmissive member; disposing a first bonding member that is uncured on at least a portion of an outer peripheral region of the upper surface of the light-emitting element; disposing a second bonding member that is uncured on a portion of the upper surface of the light-emitting element that is exposed from the first bonding member, wherein a viscosity of the second bonding member that is uncured is lower than a viscosity of the first bonding member that is uncured; spreading the first bonding member and/or the second bonding member in an outer peripheral region of the lower surface of the light-transmissive member by pressing the first bonding member and the second bonding member by the lower surface of the light-transmissive member; and curing the first bonding member and the second bonding member.
H01S 5/0236 - Fixation des puces laser sur des supports en utilisant un adhésif
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
A light emitting element includes: a semiconductor structure including a first semiconductor layer of a first conductivity type, an active layer disposed below the first semiconductor layer, and a second semiconductor layer of a second conductivity type disposed below the active layer; a cover part made of an insulating material and disposed on the upper surface of the first semiconductor layer; a metal layer disposed within the cover part; a light transmissive electrode disposed on the upper surface of the cover part and the upper surface of the first semiconductor layer; a first electrode including an external connection portion disposed on the upper surface of the light transmissive electrode, and an extended portion extending from the external connection portion, and a second electrode disposed on the second semiconductor layer. At least a portion of the extended portion overlaps the cover part and the metal layer in a plan view.
A light source device includes: a first combined body configured to emit light of a first color, the first combined body including: a first light emitting portion comprising a first light emitting element, and a second light emitting portion comprising a plurality of second light emitting elements arrayed around an outer periphery of the first light emitting element in a plan view; a second combined body configured to emit light of a second color different from the first color, the second combined body including: a third light emitting portion comprising a third light emitting element, and a fourth light emitting portion comprising a plurality of fourth light emitting elements arrayed around an outer periphery of the first light emitting element in a plan view; and a compound lens disposed above the first combined body and the second combined body, the compound lens comprising a first lens and a second lens.
A light-emitting module includes a housing including a first opening, a substrate including a second opening, a light-emitting device, and electronic paper covering the first opening. The light-emitting device is disposed in the housing and configured to emit first light. At least a portion of second light, which is a reflective component of the first light reflected by the electronic paper, is emitted to outside of the housing through the second opening. The electronic paper is switchable between a first state in which a first color appears when the light-emitting device is turned on and a second state in which a second color appears when the light-emitting device is turned off. In the first state and the second state, the electronic paper is visually recognizable from the outside of the housing through the second opening.
G02F 1/167 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur le mouvement de translation des particules dans un fluide sous l’influence de l’application d’un champ caractérisés par l’effet électro-optique ou magnéto-optique par électrophorèse
A light emitting device includes a base member formed of a ceramic material and having a through hole, a first interconnect disposed on an upper surface of the base member, a second interconnect disposed on a lower surface of the base member, a conductive member disposed inside the through hole and electrically connecting the first interconnect and the second interconnect, a light emitting element disposed on the first interconnect and electrically connected to the first interconnect, and an integrated circuit disposed on the first interconnect and electrically connected to the first interconnect.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A semiconductor laser element includes a first semiconductor layer being a III-V compound semiconductor layer containing at least As; a second semiconductor layer located above the first semiconductor layer and being a III-V compound semiconductor layer containing at least P; a third semiconductor layer located above the second semiconductor layer; an active layer on the second semiconductor layer; a window structure formed across the first to third semiconductor layers and the active layer; a defect layer having a defect, located in a region where the window structure is formed and between the first and second semiconductor layers, and containing a group III element of each of the first and second semiconductor layers; and an end surface emitting laser light and including the defect layer. The defect layer does not overlap with a near-field pattern of laser light at the end surface or overlaps only with a tail of the near-field pattern.
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
A light-emitting module includes a light-emitting device and a wiring board. The light-emitting device includes a substrate on which semiconductor laser elements are arranged along a longitudinal direction. The wiring board has a mounting surface including a first area on which the light-emitting device is mounted. The wiring board has a longitudinal direction extending in a first direction. The wiring board includes first and second fixing portions, a first electrode portion to which the substrate is joined, and a second electrode portion. The second electrode portion is configured to be connected to a connecting member for electrical connection to an external device. In the top view, the first area is located between the first and second fixing portions. The second fixing portion is disposed between the first and second electrode portions. The substrate has the longitudinal direction extending in the first direction.
A light-emitting device includes a base, a plurality of submounts, a plurality of semiconductor laser elements, and a plurality of protective elements. The submounts include first and second lateral surfaces, are arranged such that the first lateral surface is aligned in a first direction on an upper surface of the base, and have a length in a second direction perpendicular to the first direction in a top view greater than a length in the first direction. The semiconductor laser elements are arranged on the submounts different from each other such that the light-emitting surface is in a position closer to the first lateral surface than the second lateral surface. The protective elements are each arranged on the submounts different from each other in a position in which a distance to the second lateral surface is shorter than a distance from the semiconductor laser element to the second lateral surface.
A method for manufacturing a laminate includes: disposing a resist material layer on an intermediate body; exposing the resist material layer to light using a mask including a first portion, a second portion having a light transmittance lower than that of the first portion, and a third portion having a light transmittance lower than that of the second portion; developing the exposed resist material layer to form a resist layer including a first region disposed in a region corresponding to the first portion, a second region disposed in a region corresponding to the second portion, spaced apart from the intermediate body, and connected to the first region, and an opening formed in a region corresponding to the third portion; forming a covering layer on the resist layer and the intermediate body; and removing the resist layer to remove a portion of the covering layer in contact with the resist layer.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A semiconductor laser element includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer. The p-side semiconductor layer includes, in order from the active layer, a first p-side composition gradient layer made of undoped InxGa1-xN and having an In composition ratio x decreasing in a range of 0 to less than 1 with distance from the active layer, an intermediate layer made of undoped AlzGa1-zN, and having an Al composition ratio z in a range of more than 0, a second p-side composition gradient layer made of undoped AlyGa1-yN, and having an Al composition ratio y increasing in a range of more than z to less than 1 with distance from the active layer, one or more p-type semiconductor layers containing a p-type impurity, and an electron barrier layer having a band gap energy larger than the second p-side composition gradient layer and containing a p-type impurity.
H01S 5/20 - Structure ou forme du corps semi-conducteur pour guider l'onde optique
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
A light emitting device includes: a support defining first and second recesses partitioned by a wall, an area of a first bottom surface of the first recess is greater than a second bottom surface of the second recess; first and second light emitting elements in the first recess; a third light emitting element in the second recess; a first light transmissive member apart from the third light emitting element in the first recess, including a first wavelength conversion member having an emission peak wavelength longer than the first light emitting element, and overlapping the first and second light emitting elements; and a second light transmissive member located in the second recess and overlapping the third light emitting element.
A light emitting device includes: a support defining first and second recesses partitioned by a wall, an area of a first bottom surface of the first recess is greater than a second bottom surface of the second recess; first and second light emitting elements in the first recess; a third light emitting element in the second recess; a first light transmissive member apart from the third light emitting element in the first recess, including a first wavelength conversion member having an emission peak wavelength longer than the first light emitting element, and overlapping the first and second light emitting elements; and a second light transmissive member located in the second recess and overlapping the third light emitting element.
The first to third light emitting elements are drivable independently.
A light emitting device includes: a support defining first and second recesses partitioned by a wall, an area of a first bottom surface of the first recess is greater than a second bottom surface of the second recess; first and second light emitting elements in the first recess; a third light emitting element in the second recess; a first light transmissive member apart from the third light emitting element in the first recess, including a first wavelength conversion member having an emission peak wavelength longer than the first light emitting element, and overlapping the first and second light emitting elements; and a second light transmissive member located in the second recess and overlapping the third light emitting element.
The first to third light emitting elements are drivable independently.
The emission peak wavelength of the first light emitting element is longer than the second and third light emitting elements.
H10H 29/851 - Moyens de conversion de la longueur d’onde
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A backlight device configured to be disposed under a liquid crystal panel includes a plurality of light-emitting units, a backlight driving circuit, and a lighting stop circuit. Each of the plurality of light-emitting units includes one or more light sources. The backlight driving circuit is configured to generate a scan synchronization signal that is asynchronous to a vertical synchronization signal generated for each frame cycle of the liquid crystal display and generate a plurality of scan signals to sequentially turn on the plurality of light-emitting units in each cycle of the scan synchronization signal, in synchronization with the generated scan synchronization signal. The lighting stop circuit is configured to stop lighting of the plurality of light-emitting units periodically during one cycle or a plurality of cycles of the scan synchronization signal.
G09G 3/34 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante
G02F 1/1335 - Association structurelle de cellules avec des dispositifs optiques, p. ex. des polariseurs ou des réflecteurs
G09G 3/36 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice en commandant la lumière provenant d'une source indépendante utilisant des cristaux liquides
A wavelength conversion member includes a substrate having light reflectivity, and a phosphor layer disposed on the substrate and including phosphor particles, oxide particles adhering to the phosphor particles, and a covering film containing silicon oxide and covering the phosphor particles and the oxide particles. A material of the oxide particles differs from a material of the covering film, and an extinction coefficient of the covering film is less than 1.0×10−5.
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
A light-emitting device includes a base member having an outer lateral surface, an upper surface meeting the outer lateral surface, and a recess on an upper surface side, a light-emitting element disposed in the recess, a lens disposed on the upper surface of the base member and including a lens portion and a flange portion, and a reflective member disposed in surface-to-surface contact with both the upper surface of the base member and a lateral surface of the flange portion.
A method for manufacturing a light-emitting device includes: providing a structure including: a plurality of light-emitting elements each having a light-emitting surface, and a support member disposed at least between the plurality of light-emitting elements and supporting the plurality of light-emitting elements; disposing, on the structure, a mask member covering the support member between the plurality of light-emitting elements, the mask member defining a plurality of openings each positioned above a corresponding one of the light-emitting surfaces of the plurality of light-emitting elements; disposing a plurality of wavelength conversion members in the plurality of openings; and after disposing the plurality of wavelength conversion members, removing the mask member and the support member between the plurality of light-emitting elements.
A light emitting device includes a light emitting element having a light emission peak wavelength of 430 nm or more and 470 nm or less, and a fluorescent member containing a first fluorescent material having a light emission peak wavelength of 510 nm or more and less than 590 nm and a second fluorescent material having a light emission peak wavelength of 590 nm or more and 670 nm or less and containing a first fluoride fluorescent material having a composition included in the compositional formula represented by the following formula (1):
A light emitting device includes a light emitting element having a light emission peak wavelength of 430 nm or more and 470 nm or less, and a fluorescent member containing a first fluorescent material having a light emission peak wavelength of 510 nm or more and less than 590 nm and a second fluorescent material having a light emission peak wavelength of 590 nm or more and 670 nm or less and containing a first fluoride fluorescent material having a composition included in the compositional formula represented by the following formula (1):
where A1 includes K, M1 includes Si and Al, a and b satisfy 0
A nitride phosphor, having a composition that contains Eu, Si, Al, N, and a Group 2 element containing at least one selected from the group consisting of Mg, Ca, Sr, and Ba. With respect to a molar content of Al in the composition, a ratio of a total molar content of the Group 2 element and Eu is in a range of 0.8 to 1.1, a ratio of a molar content of Eu is in a range of 0.002 to 0.08, a ratio of a molar content of Si is in a range of 0.8 to 1.2, and a ratio of a total molar content of Si and Al is in a range of 1.8 to 2.2. The nitride phosphor has an average value of an aspect ratio, which is a minor-axis-to-major-axis ratio, in a range of 0.72 to 0.77, and an average circularity in a range of 0.82 to 0.92.
H10H 20/851 - Moyens de conversion de la longueur d’onde
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
A substrate including a base including a primary surface, a conductive member disposed on the primary surface. and a covering member. The conductive member includes a first portion including a first conductive layer and an aluminum layer layered in order from a bottom of the conductive member, a second portion including a gold layer on an uppermost surface of the second portion of the conductive member, and a third portion including the gold layer, the first conductive layer, and the aluminum layer layered in order from the bottom of the conductive member. The covering member covers a first boundary, which is a boundary between the first portion and the third portion, and a second boundary, which is a boundary between the second portion and the third portion.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A method of manufacturing a light-emitting module includes: providing a first substrate that has an upper surface including an element mounting region and has first terminals disposed on the upper surface and located outward of the element mounting region; providing a second substrate that has an upper surface including a substrate mounting region in which the first substrate is to be mounted and has second terminals disposed on the upper surface and located outward of the substrate mounting region; mounting a plurality of light-emitting elements in the element mounting region of the first substrate; mounting the first substrate in the substrate mounting region of the second substrate; connecting respective ones of the first terminals and respective ones of the second terminals via respective ones of wires; and disposing a covering member that covers the wires, the first terminals, and the second terminals.
A lens includes: a first lens portion having a positive refractive power; and a second lens portion having a positive refractive power and located outward of an outer edge of the first lens portion in a top view. The first lens portion has an optical axis, a first light incident surface, and a first light exit surface located opposite to the first light incident surface. The second lens portion has a second light incident surface and a second light exit surface located opposite to the second light incident surface. In a cross section including the optical axis of the first lens portion: a lens main axis of the second lens portion is inclined with respect to the optical axis of the first lens portion such that the lens main axis has an increasing distance from the optical axis toward the second light exit surface from the second light incident surface.
H10H 29/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A laser light source includes a semiconductor structure, a first electrode, and a first metal portion. The semiconductor structure includes a semiconductor layer configured to emit light. The semiconductor structure has an upper surface. The first electrode is provided on the upper surface of the semiconductor structure. The first metal portion is provided on the first electrode, with the first electrode being partially exposed from the first metal portion. A pattern indicating information on the semiconductor structure is provided in a region where the first electrode is partially exposed.
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
65.
METHOD FOR MANUFACTURING SINTERED COMPACT AND SINTERED COMPACT
A method for manufacturing a sintered compact is provided, the method including: providing α-sialon phosphor particles; providing a formed body including forming a raw material mixture obtained by mixing the α-sialon phosphor particles and yttrium oxide particles; placing the formed body in a container containing pyrolytic boron nitride; disposing a first lid containing pyrolytic boron nitride at an opening of the container; and obtaining a first sintered compact containing an α-sialon phosphor crystal phase by subjecting the formed body in the container having the opening closed with the first lid to primary firing at a temperature in a range of 1800° C. to 2000° C.
C04B 35/597 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de non oxydes à base de borures, nitrures ou siliciures à base d'oxynitrures de silicium
C04B 35/626 - Préparation ou traitement des poudres individuellement ou par fournées
66.
METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE
A method of manufacturing a light-emitting device includes: providing a first structure including a first support substrate, a release portion, and a light-transmissive portion, in this order; providing a second structure including a second support substrate, and light-emitting elements temporarily fixed to the second support substrate, each including electrodes at its lower surface, and being temporarily fixed to the second support substrate via a temporary fixing layer; transferring the light-emitting elements to the light-transmissive portion by irradiating the temporary fixing layer with laser light; forming a light-shielding portion between the light-emitting elements; bonding the electrodes to the substrate; disposing a resin portion in at least a part of an area between each of the light-emitting elements and the substrate, in which a concentration of a filler contained in the resin portion is lower than that in the light-shielding portion; and releasing the first support substrate from the first structure.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
An oxide phosphor has a composition represented by Formula (1) below: (Li1-sM1s)(Mg1-tM2t)u(Ga1-vM3v)wOx:Cry,M4z (1), wherein in Formula (1), M1 is at least one element selected from the group consisting of Na, K, Rb, and Cs; M2 is at least one element selected from the group consisting of Ca, Sr, Ba, and Zn; M3 is at least one element selected from the group consisting of Al and Sc; M4 is at least one element selected from the group consisting of Ni, Ce, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb; s, t, u, v, w, and x satisfy 0≤s≤0.5, 0≤t≤1.0, 0.03≤u≤10, 0≤v≤1.0, 5.1≤w≤25, 0.005≤u/w≤0.4, and 8.2≤x≤48; and when Li is taken as 1 or a total of Li and M1 is taken as 1, y and z satisfy 0.02≤y≤0.5, 0≤z≤0.3, and y>z with respect to Li or to the total of Li and M1, respectively.
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
68.
LIGHT-EMITTING MODULE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a light-emitting module includes: providing a light-emitting element including a semiconductor layered body, a first electrode part, second electrode parts, and an insulating part disposed in areas between the first electrode part and the second electrode parts and at least one of areas between adjacent second electrode parts on the first surface, the insulating part protruding further away from the first surface than the first electrode part and the second electrode parts; providing an intermediate structure including a wiring substrate, a first conductive part, second conductive parts, and a holding part disposed in areas between the first conductive part and the second conductive parts and at least one of areas between adjacent second conductive parts on the second surface; disposing the light-emitting element on the intermediate structure; and forming the first bonding part and the second bonding part.
A light emitting device includes light emitting element(s). A light transmissive member is on an upper surface of the light emitting element(s). An upper surface area of the light transmissive member is smaller than a lower surface area of the light transmissive member. The upper surface area of the light transmissive member is smaller than a sum of upper surface areas of each light emitting element(s). The lower surface area of the light transmissive member is larger than the sum of the upper surface areas of each light emitting element(s). A light reflective member is provided having a first light reflective member and an underfill. The first light reflective member covers surfaces of the light transmissive member and lateral surfaces of the light emitting element(s) to expose the upper surface of the light transmissive member. The underfill covers the lateral and lower surfaces of each light emitting element(s).
H10H 20/853 - Encapsulations caractérisées par leur forme
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H10H 20/813 - Corps ayant une pluralité de régions électroluminescentes, p. ex. LED à jonctions multiples ou dispositifs émetteurs de lumière ayant des régions photoluminescentes au sein des corps
H10H 20/823 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe II-VI, p. ex. ZnO
H10H 20/824 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
H10H 20/841 - Revêtements réfléchissants, p. ex. réflecteurs de Bragg en diélectriques
A light source including: a wiring substrate including a conductor layer and a first insulating layer arranged on an upper surface of the conductor layer; and first and second light-emitting devices arranged on an upper surface of the wiring substrate. The wiring substrate includes first, second, third, and fourth wiring lines arranged on the first insulating layer. The third and fourth wiring lines are electrically connected to the conductor layer. The first light-emitting device includes a first anode and a first cathode. The second light-emitting device includes a second anode and a second cathode. The first anode is electrically connected to the first wiring line. The first cathode and the second anode are electrically connected to the second wiring line. The second cathode is electrically connected to the third wiring line.
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
This light emitting device comprises: a base; at least one first light emitting element that is disposed on the base and emits light from an upper surface and a lateral surface thereof; a reflective member disposed in a vicinity of the at least one first light emitting element; and a lens that overlaps the at least one first light emitting element in a top view, wherein a shape of the lens in the top view is an elliptical shape having a major axis in an x direction and a minor axis in a y direction orthogonal to the x direction, and, regarding a region of the reflective member overlapping the lens, an area size of a portion of the region on the −y direction side of the major axis is larger than an area size of a portion of the region present on the +y direction side of the major axis in the top view.
H10H 20/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
A light-emitting module includes: a support base having a plurality of placement surfaces arranged in a first direction; a plurality of light-emitting devices each disposed on the respective corresponding placement surface, and each including a semiconductor laser element, a first mirror member, a cover, and a second mirror member; a plurality of third mirror members; and a condensing lens. The first mirror member changes a traveling direction of a laser beam emitted from the semiconductor laser element. The cover transmits the laser beam having the changed traveling direction. The second mirror member further changes the traveling direction of the laser beam transmitted through the cover to a second direction. Each third mirror member changes the traveling direction of the laser beam from the second direction to the first direction. The condensing lens combines a plurality of laser beams and allows the combined light to be incident on an optical fiber.
A light emitting module including a module substrate and a plurality of element structure bodies disposed on the module substrate. Each element structure body of the plurality of element structure bodies includes a submount substrate, a light emitting element disposed on the submount substrate, a light transmitting member disposed on the light emitting element, and a first cover member covering a lateral face of the light emitting element on the submount substrate. The light emitting module further includes a second cover member covering lateral faces of adjacent element structure bodies of the plurality of element structure bodies. A distance between submount substrates of the adjacent element structure bodies ranges from 0.05 mm to 0.2 mm.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A light-emitting module includes: a light-emitting device including a first light-emitting element configured to output first light having a peak wavelength in a range from 430 nm to 480 nm; and a second light-emitting element configured to output second light having a peak wavelength in a range from 500 nm to 600 nm; and a wavelength conversion member configured to absorb light having a wavelength included in at least one of the first light and the second light and output third light having a peak wavelength in a range from 600 nm to 780 nm. The first light-emitting element and the second light-emitting element are disposed in the light-emitting device, and the wavelength conversion member is disposed separately from the light-emitting device.
A method of producing a phosphate-coated SmFeN-based anisotropic magnetic powder, the method including performing a phosphate treatment including adding an inorganic acid to a slurry containing a raw material SmFeN-based anisotropic magnetic powder, water, a phosphate compound, and a rare earth compound so that the slurry is adjusted to have a pH of at least 1 and not higher than 4.5 to obtain a phosphate-coated SmFeN-based anisotropic magnetic powder having a surface coated with a phosphate.
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
B22F 1/142 - Traitement thermique ou thermomécanique
B22F 1/145 - Traitement chimique, p. ex. passivation ou décarburation
B22F 1/16 - Particules métalliques revêtues d'un non-métal
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
A light-emitting device includes a base member, a frame member, a light source unit, a light-transmissive member, and a reflecting member. The frame member includes a first stepped portion. The frame member defines a recessed portion that penetrates from an inner lateral surface to an outer lateral surface of a part of the frame member with the recessed portion opening at an upper surface of the frame member. The light source unit is configured to emit laser beam in a normal direction to the upper surface of the base member. The light-transmissive member is disposed on an upper surface of the first stepped portion. The reflecting member is disposed on an upper surface of the light-transmissive member, and configured to reflect the laser beam transmitted through the light-transmissive member with an optical axis of the laser beam reflected by the reflecting member overlapping the recessed portion in top view.
A light-emitting element includes: a stacked body made of a nitride semiconductor and including: a first n-type layer, a first active layer located on the first n-type layer, a first p-type layer located on the first active layer, a second n-type layer located on the first p-type layer, a second active layer located on the second n-type layer, and a second p-type layer located on the second active layer; a first electrode electrically connected with the first n-type layer; a second electrode electrically connected with the second n-type layer; a third electrode electrically connected with the second p-type layer; a first external connection part electrically connected with the first electrode; a second external connection part electrically connected with the second electrode; and a third external connection part electrically connected with the third electrode.
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
H10H 20/831 - Électrodes caractérisées par leur forme
78.
SUBMOUNT AND METHOD OF PRODUCING THE SAME, AND LIGHT-EMITTING DEVICE
A submount includes: a support layer; a first graphite layer disposed on the support layer; a first metal layer disposed on the first graphite layer; and a second metal layer disposed on the first metal layer. The first metal layer is thicker than the second metal layer. A first region in which the first metal layer is not disposed is provided at an outer peripheral portion of an upper surface of the first graphite layer. The second metal layer covers the first metal layer and the first region of the upper surface of the first graphite layer.
A method of manufacturing a light-emitting device includes: preparing a light-emitting element; disposing a bonding member on an upper surface of the light-emitting element, the bonding member being uncured; disposing a light-transmissive member on an upper surface of the light-emitting element via the bonding member, and pressing the bonding member with the light-transmissive member to cause the bonding member to creep up along a lateral surface of the light-transmissive member; curing the bonding member; and removing a portion of the bonding member and a portion of the light-transmissive member, which comprises scraping the bonding member covering the lateral surface of the light-transmissive member, and the lateral surface of the light-transmissive member covered with the bonding member.
A wavelength beam combining device for combining a plurality of laser beams having mutually different peak wavelengths includes: a diffraction grating that diffracts a plurality of first polarized beams linearly polarized in a first polarization direction and a plurality of second polarized beams linearly polarized in the first polarization direction. The plurality of first polarized beams and the plurality of second polarized beams are incident on an irradiation region of the diffraction grating in symmetry with respect to a reference plane including a normal line of the irradiation region and parallel to the first polarization direction, and the diffraction grating has a symmetrical structure with respect to the reference plane in the irradiation region, and combines the plurality of first polarized beams and the plurality of second polarized beams incident on the irradiation region in a direction parallel to the normal line to form a wavelength-combined beam.
A light-emitting device includes a base, a semiconductor laser element, a support member, a light-reflecting member, and a lens. The base includes a main body defining a recessed portion, and a step member provided inside the recessed portion. The lens is disposed on the upper surface of the step member above the light-reflecting member. The lens includes a planar portion and a convex surface portion located above the planar portion. When, in the top view, an elongated direction of the step member is a first direction, a length of the lens in the first direction is shorter than a length of the lens in a second direction orthogonal to the first direction. In the top view, at least a portion of the semiconductor laser element does not overlap the lens.
H01S 5/02253 - Découplage de lumière utilisant des lentilles
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/02315 - Éléments de support, p. ex. bases ou montures
A method of producing a light transmissive member including a first film, a second film, and a third film includes: providing a light transmissive base member having a first surface, and a second surface opposite the first surface; forming a light transmissive aluminum oxide film covering at least part of the first surface and second surfaces, the light transmissive aluminum oxide film containing aluminum oxide having a crystallinity lower than a crystallinity of α-alumina; obtaining an intermediate structure by forming a light transmissive third film covering the aluminum oxide film on the second surface; and hydrating the intermediate structure such that the aluminum oxide film becomes the first film covering at least part of the first surface and containing hydrous alumina, and becomes the second film covering at least part of the second surface and containing the aluminum oxide having a crystallinity lower than the crystallinity of α-alumina.
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21Y 103/10 - Sources lumineuses de forme allongée, p. ex. tubes fluorescents comprenant un réseau linéaire d’éléments générateurs de lumière ponctuelle
83.
WAVELENGTH BEAM COMBINING DEVICE, DIRECT DIODE LASER DEVICE, AND LASER PROCESSING MACHINE
A wavelength beam combining device for combining laser beams having different peak wavelengths includes: a first optical component separating the laser beams into first polarization beams linearly polarized in a first polarization direction and second polarization beams linearly polarized in a second polarization direction orthogonal to the first polarization direction; a first polarization conversion element converting the second polarization beams into third polarization beams linearly polarized in the first polarization direction; first and second mirrors reflecting the first and third polarization beams, respectively; a first diffraction element receiving the first polarization beams and diffracting them to form a first wavelength-combined beam coaxially combined; a second diffraction element receiving the third polarization beams and diffracting them to form a second wavelength-combined beam in which the third polarization beams are coaxially combined; and a second optical component on which the first and second wavelength-combined beams are incident.
A pest control system includes a plurality of first light sources configured to emit light with a first wavelength to a first region of a cultivation region in which crops are cultivated, to suppress damage to the crops caused by harmful insects, and one or more second light sources configured to emit light with a second wavelength to gather the harmful insects in a second region that is a part of the cultivation region and smaller than the first region.
Provided is a cathode active material for a lithium-ion battery that can reduce gas generation in the cathode and exhibits an excellent filling property. Also provided is a method of producing a cathode active material for a lithium-ion battery, the method including preparing a mixture comprising a lithium transition metal composite oxide having a layered structure, containing lithium and nickel in a composition, and containing secondary particles formed by aggregation of a plurality of primary particles, the secondary particles having a volume-average particle diameter greater than 3 μm and less than 5 μm, and a treatment solution containing a sulfate ion and a liquid medium, a concentration of the sulfate ion being in a range of 1 mass % to 9 mass %; and removing the treatment solution from the mixture.
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
86.
LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE
A light-emitting device of the present disclosure includes: a light-emitting element including a semiconductor structure having a light-emitting surface, an electrode-forming surface located on a side opposite to the light-emitting surface, and a lateral surface located between the light-emitting surface and the electrode-forming surface, and a first electrode disposed on the electrode-forming surface and having a first surface facing the electrode-forming surface, a second surface located on a side opposite to the first surface, and a lateral surface located between the first surface and the second surface; and a light-reflective member configured to cover the light-emitting element except for the light-emitting surface and the second surface, wherein the light-reflective member includes: a light-reflective inorganic member covering at least a lateral surface of the semiconductor structure; and a light-reflective resin member covering a lateral surface of the first electrode and the light-reflective inorganic member.
A method of manufacturing a semiconductor element includes: a first process that includes forming a first modified portion in the substrate, and forming a second modified portion at a position next to the first modified portion in a first direction, and a process of forming a plurality of third modified portions arranged in a thickness direction of the substrate at positions that are closer to the first face of the substrate than is the first modified portion and overlapping the first modified portion in a plan view. No modified portions are formed at positions that are next to the third modified portions in the first direction to overlap the second modified portions in a plan view. The number of the first modified portions arranged in the thickness direction is equal to or less than the number of the third modified portions arranged in the thickness direction.
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
B23K 26/082 - Systèmes de balayage, c.-à-d. des dispositifs comportant un mouvement relatif entre le faisceau laser et la tête du laser
B23K 26/38 - Enlèvement de matière par perçage ou découpage
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
88.
LIGHT-EMITTING DEVICE, LIGHT-EMITTING MODULE, AND MOBILE DEVICE
A light-emitting device includes: a light-emitting element; a light-transmissive member disposed on the light-emitting element and having an upper surface, a lower surface, and a first recessed portion that opens at the upper surface; and a first light-shielding member located on the upper surface of the light-transmissive member. A lateral surface of the first recessed portion of the light-transmissive member is exposed from the first light-shielding member.
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
A light-emitting device includes: a light-emitting element; a light-transmissive member disposed on an upper surface and a lateral surface of the light-emitting element; and a light diffusion member disposed on an upper surface of the light-transmissive member. A lateral surface of the light-transmissive member is exposed from the light diffusion member. A distance between an upper surface of the light-emitting element and an upper surface of the light-transmissive member is greater than a distance between a lateral surface of the light-emitting element and a lateral surface of the light-transmissive member. An upper surface of the light-transmissive member includes one or more first protruding portions. The light diffusion member is in contact with a surface of the one or more first protruding portions.
A light-emitting device includes a light-emitting element and a light-transmissive member disposed on the light-emitting element. The light-emitting element has a first upper surface, a first lower surface, and at least one first lateral surface connecting the first upper surface and the first lower surface. The light-transmissive member has a second upper surface, a second lower surface, and at least one second lateral surface connecting the second upper surface and the second lower surface. The at least one second lateral surface includes a first region inclined toward a center of the second lower surface as the first region extends downward. The first region is a flat or curved surface. In a top view, an outer peripheral end of each second lateral surface overlaps an outer peripheral end of each first lateral surface, and an outer peripheral end of the second lower surface overlaps a lower end of the first region.
In a magnetic body including magnetic particles that contain an FeNi ordered alloy having an L10-type ordered structure, the magnetic particles individually have a flat shape in which a major axis and a minor axis shorter than the major axis intersect each other, and a flat surface along the major axis is larger than a side surface along the minor axis. An easy magnetization axis of the L10-type ordered structure lies along the flat surface.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
A method of manufacturing a light emitting device includes: providing a structure including: a first substrate, a plurality of light emitting parts arranged apart from one another on an upper surface of the first substrate, a metal layer disposed on an upper surface side of the first substrate and covering at least the light emitting parts, and a protective member covering the metal layer; bonding a second substrate to the protective member; exposing the lower surfaces of the light emitting parts by removing the first substrate; bonding a light transmissive member to the lower surfaces of the light emitting parts via a bonding member; removing the second substrate; creating exposed portions of the light transmissive member; removing the metal layer; and dividing the light transmissive member into individual pieces at the exposed portions.
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
93.
LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING DEVICE, AND METHOD OF MANUFACTURING LIGHT-RECEIVING ELEMENT
A light-receiving element includes a substrate, a semiconductor layer, and an insulating layer positioned between the substrate and the semiconductor layer in a first direction. The semiconductor layer includes an n-type region, a p-type region, and a mesa portion positioned between the n-type region and the p-type region in a second direction orthogonal to the first direction, the mesa portion having an upper surface, and lateral surface inclined with respect to the upper surface. A length of the mesa portion in the second direction decreases from a side closer to the insulating layer toward the upper surface. The mesa portion includes, in a surface layer region having the upper surface and the lateral surfaces, a light absorption region that can absorb light having a wavelength longer than a wavelength corresponding to a band gap energy of a material constituting the semiconductor layer.
H10F 30/223 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel étant du type PIN
H10F 71/00 - Fabrication ou traitement des dispositifs couverts par la présente sous-classe
H10F 77/00 - Détails de structure des dispositifs couverts par la présente sous-classe
H10F 77/14 - Forme des corps semi-conducteursFormes, dimensions relatives ou dispositions des régions semi-conductrices au sein des corps semi-conducteurs
A method of manufacturing hexagonal boron nitride fibers includes: providing amorphous fibrous boron nitride; performing heat treatment on the amorphous fibrous boron nitride at a first temperature of 500° C. or greater and less than 900° C. in an oxygen-containing atmosphere to obtain a first heat-treated product; and performing heat treatment on the first heat-treated product at a second temperature in a range of 1000° C. to 1800° C. in a nitrogen-containing atmosphere to obtain a second heat-treated product containing hexagonal boron nitride.
A light-emitting device includes first and second semiconductor laser elements, a package, and first and second reflection regions. The first and second reflection regions are configured to respectively reflect first and second lights emitted from the first and second semiconductor laser elements. A distance from a first light-emitting point to a first irradiation spot on the first reflection region irradiated with light propagating along an optical axis of the first light is shorter than a distance from the second light-emitting point to a second irradiation spot on the second reflection region irradiated with light propagating along an optical axis of the second light. The first light has an angle of divergence in a fast-axis direction greater than an angle of divergence in the fast-axis direction which the second light has.
H01S 5/02315 - Éléments de support, p. ex. bases ou montures
H01S 5/02216 - SupportsBoîtiers caractérisés par la forme des boîtiers du type papillon, c.-à-d. avec les broches d’électrode s’étendant latéralement depuis le boîtier
H01S 5/02255 - Découplage de lumière utilisant des éléments de déviation de faisceaux lumineux
H01S 5/02326 - Dispositions pour le positionnement relatif des diodes laser et des composants optiques, p. ex. rainures dans le support pour fixer des fibres optiques ou des lentilles
H01S 5/024 - Dispositions pour la gestion thermique
H01S 5/0683 - Stabilisation des paramètres de sortie du laser en surveillant les paramètres optiques de sortie
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H10F 55/155 - Dispositifs à semi-conducteurs sensibles au rayonnement couverts par les groupes , ou structurellement associés à des sources lumineuses électriques et électriquement ou optiquement couplés avec lesdites sources dans lesquels les dispositifs à semi-conducteurs sensibles au rayonnement commandent la source lumineuse électrique, p. ex. convertisseurs d'images, amplificateurs d'images ou dispositifs de stockage d'image dans lesquels les dispositifs sensibles au rayonnement et la source lumineuse électrique sont tous des dispositifs à semi-conducteurs formés dans ou sur un même substrat
A lens including a cover part and a light-shielding part. The cover part has a lens part, a connection part extending outward from the lens part, and flange part(s) extending downward from the connection part. The lens part and the flange part(s) define a recess having an opening facing downward. The lens part defines a bottom surface of the recess. The flange part(s) extend from the bottom surface and define lateral surfaces, which define the opening of the recess. The lens part has a convex lens and a light incidence surface with projections. The projections are arranged in concentric circles or ellipsoids in plan view. The flange part(s) each extends downward beyond the projections. The lens part, the flange part(s), and the connection part are continuous to one another, and the light-shielding part covers at least a portion of an outer lateral surface of the flange part(s).
H10H 20/814 - Corps ayant des moyens réfléchissants, p. ex. des réflecteurs de Bragg en semi-conducteurs
97.
POSITIVE-ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERIES, METHOD FOR MANUFACTURING SAME, POSITIVE ELECTRODE FOR SECONDARY BATTERIES USING SAME, AND SECONDARY BATTERY
Provided is a method for producing a cathode active material for a secondary battery which enables configuring a battery with improved battery resistance. The method includes providing a lithium transition metal composite powder in which a ratio of the number of moles of nickel atoms to the total number of moles of metal atoms other than lithium is 0.5 or more and less than 1 and a ratio of the number of moles of cobalt atoms to the total number of moles of metal atoms other than lithium is 0 or more and less than 0.5, the lithium transition metal composite powder having a layered structure; contacting the lithium transition metal composite powder with a cobalt raw material to obtain a cobalt-adhered composite oxide; subjecting the cobalt-adhered composite oxide to a first heat treatment performed at a temperature higher than 600° C. and lower than 800° C. to obtain a first heat-treated product; contacting the first heat-treated product with a niobium raw material to obtain a niobium-adhered composite oxide; and subjecting the niobium-adhered composite oxide to a second heat treatment performed at a temperature higher than 300° C. and lower than 500° C. to obtain a second heat-treated product.
C01G 53/504 - Oxydes complexes contenant du nickel et au moins un autre élément métallique contenant des métaux alcalins, p. ex. LiNiO2 contenant du manganèse du type (MnO2)n-, p. ex. Li(NixMn1-x)O2 ou Li(MyNixMn1-x-y)O2 contenant du lithium et du cobalt avec le rapport molaire du nickel par rapport à tous les métaux autres que les métaux alcalins supérieur ou égal à 0,5, p. ex. Li(MzNixCoyMn1-x-y-z)O2 avec x ≥ 0,5
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
98.
LIGHT-EMITTING DEVICE INCLUDING SUPPORT MEMBER WITH HOLE PORTION
A light-emitting device includes: a support member having a first surface and a second surface opposite the first surface, the support member including: a wiring layer comprising a connection portion located at the second surface, and a hole portion separated from the connection portion in a plan view, the hole portion extending from the first surface to the second surface; a light source located on the first surface of the support member, the light source comprising a positive electrode and a negative electrode; a conductive member located in the hole portion, the conductive member connecting the connection portion and one of the positive electrode or the negative electrode; a light guide plate having a through hole extending from a first major surface to a second major surface, the second major surface facing the support member; and an insulating film covering and contacting the conductive member.
A light-emitting device includes: a first light-emitting unit including: a first light-emitting element having a first element lateral surface, and a first light-transmissive member disposed over the first light-emitting element and having a first lateral surface; a second light-emitting unit including: a second light-emitting element having a second element lateral surface facing the first element lateral surface, and a second light-transmissive member disposed over the second light-emitting element and having a second lateral surface facing the first lateral surface; and a reflective member holding the first light-emitting unit and the second light-emitting unit together, wherein the reflective member includes: a first reflective member and a second reflective member.
A light source module includes a laterally long light source unit including a plurality of light-emitting portions and extending in a first direction when viewed from a light-emitting surface of the light-emitting portion; a plurality of heat dissipation units formed of a metal material and attachable individually; and an attachment portion located between the light source unit and the heat dissipation units and provided with the heat dissipation units attached to the attachment portion. Each of the heat dissipation units includes two sidewall portions facing each other at a predetermined interval and a coupling portion coupling end portions of the sidewall portions on the same side to each other, and the coupling portion of each of the heat dissipation units is attached to the attachment portion so as to extend in a second direction perpendicular to the first direction when viewed from the light-emitting surface of the light-emitting portion.
F21V 29/71 - Dispositions de refroidissement caractérisées par des éléments passifs de dissipation de chaleur, p. ex. puits thermiques utilisant une combinaison d’éléments séparés interconnectés par des moyens thermo-conducteurs, p. ex. tubes caloporteurs ou barres thermiquement conductrices pour conduire la chaleur entre des éléments séparés de puits thermique
F21S 45/48 - Refroidissement passif, p. ex. en utilisant des ailettes, des éléments thermiquement conducteurs ou des ouvertures avec des moyens pour conduire la chaleur de l’intérieur vers l’extérieur des dispositifs d’éclairage, p. ex. avec des ailettes situées sur la surface extérieure du dispositif d’éclairage
F21V 17/04 - Fixation des parties constitutives des dispositifs d'éclairage, p. ex. des abat-jour, des globes, des réfracteurs, des réflecteurs, des filtres, des écrans, des grilles ou des cages de protection sur la source lumineuse ou par son intermédiaire
F21V 29/503 - Dispositions de refroidissement caractérisées par l’adaptation au refroidissement de composants spécifiques de sources lumineuses
F21V 29/75 - Dispositions de refroidissement caractérisées par des éléments passifs de dissipation de chaleur, p. ex. puits thermiques avec ailettes ou lames avec ailettes ou lames ayant des formes, des épaisseurs ou des espacements différents
F21V 29/76 - Dispositions de refroidissement caractérisées par des éléments passifs de dissipation de chaleur, p. ex. puits thermiques avec ailettes ou lames avec ailettes ou lames en plans parallèles essentiellement identiques, p. ex. avec une section en forme de peigne
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