A light emitting module includes a plurality of light emitting parts; an optical member including at least one first region where light having a first chromaticity is extracted and at least one second region where light having a second chromaticity different from the first chromaticity is extracted, and configured to transmit or pass light emitted from the plurality of light emitting parts; a change mechanism configured to change a distance between the optical member and the plurality of light emitting parts in a direction along a center axis of the first lens; and a first lens on which light transmitted or passing through the optical member is incident. The first region or the second region is provided so as to correspond to one of the plurality of light emitting parts.
A light-emitting module includes: a light source including a plurality of light-emitting elements; a controller configured to individually turn on the plurality of light-emitting elements; a lens configured to transmit light from the plurality of light-emitting elements; and a driver configured to cause a relative rotation between the lens and the light source such that an optical axis of the lens or a central axis of the light source moves on a first trajectory in a top view. Light from each of the plurality of light-emitting elements after being transmitted through the lens is emitted such that a main light beam of the light moves on a second trajectory corresponding to the first trajectory.
A method for manufacturing a magnet unit is provided. The magnet unit includes a holding member having multiple slots and bonded magnets inside the slots, respectively. The manufacturing method includes a process of injecting a magnet material into the slots from a first end of the holding member via multiple gates, respectively, and a process of cutting the magnet material at the gates. The gates have different outlet areas. In the process of injecting, a flow of the magnet material flowing into the plurality of slots is regulated with the plurality of gates having the different outlet areas. Further, in the process of injecting, an internal pressure of the magnet material inside each of the plurality of slots does not exceed a threshold at which the holding member plastically deforms.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
H02K 1/27 - Noyaux rotoriques à aimants permanents
An imaging device includes imaging element; a light-emitting device spaced apart from the imaging element in a top view and including a plurality of light-emitting parts; a lens disposed above the light-emitting device; and a controller configured to control light emission of the plurality of light-emitting parts so as to control irradiation light from the light-emitting device onto an irradiation surface that is perpendicular to a central axis of the imaging element and includes a central point of an imaging region. The controller is configured to select, as a reference light-emitting part serving as a reference for controlling the irradiation light, a light-emitting part configured to irradiate the central point of the imaging region with light. The light-emitting device is configured to irradiate the irradiation surface with the irradiation light with the reference light-emitting part as a reference.
H04N 23/74 - Circuits de compensation de la variation de luminosité dans la scène en influençant la luminosité de la scène à l'aide de moyens d'éclairage
G01S 17/08 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
A light-emitting device includes a support; a first electrically-conductive part, a second electrically-conductive part, and a third electrically-conductive part disposed apart from one another on the support; a first light-emitting element disposed on the first electrically-conductive part; and an integrated circuit electrically connected to the first light-emitting element. At least a portion of the first electrically-conductive part is located between the second electrically-conductive part and the third electrically-conductive part in a first direction. The integrated circuit and the first light-emitting element are arranged side by side in a second direction orthogonal to the first direction. A maximum length of the integrated circuit in the second direction is smaller than a maximum length of the integrated circuit in the first direction.
A light emitting device includes a wavelength converting member, a light emitting part, and a light adjusting member. The wavelength converting member includes an upper surface, a lower surface, a first lateral surface located between the upper surface and the lower surface, and a second lateral surface located between the upper surface and the lower surface, and located opposite to the first lateral surface. The light emitting part includes a light emitting layer, and is disposed below the lower surface of the wavelength converting member and in a region closer to the first lateral surface than to the second lateral surface. The light adjusting member is disposed on the upper surface of the wavelength converting member and in a region closer to the second lateral surface than to the first lateral surface without overlapping with the light emitting layer of the light emitting part in a top view.
A light-emitting device includes first and second semiconductor laser elements, first and second protective elements, and first and second submounts. The second semiconductor laser element has a length greater than the first semiconductor laser element. In a top view, the first protective element is not placed between first and second virtual straight lines respectively passing through and parallel to the light-emitting surface and the first lateral surface of the first semiconductor laser element, and a part or all of the second protective element is placed between third and fourth virtual straight lines respectively passing through and parallel to the light-emitting surface and the first lateral surface of the second semiconductor laser element. In the top view, a midpoint of the light-emitting surface of each of the first and second semiconductor laser elements does not coincide with a midpoint of the first and second submounts, respectively.
A method for manufacturing a light-emitting device includes: preparing an intermediate body including: a substrate, and a plurality of light-emitting elements disposed on the substrate, each including a first surface serving as a light extraction surface, a second surface opposite to the first surface, and a lateral surface connecting the first surface and the second surface; applying a powder composition including a reflective member and a silicone resin powder from above the first surfaces of the plurality of light-emitting elements through a sieve to locate the powder composition on the substrate and between the lateral surfaces of the plurality of light-emitting elements; and forming a first covering member by applying vibration to the powder composition and subsequently applying pressure in a thickness direction of the substrate to perform compression molding.
A light-emitting device includes first and second portions. The first portion includes a light-emitting element, a wavelength conversion member, and a first reflective member covering lateral surfaces of the light-emitting element and the wavelength conversion member. The second portion includes a light-transmissive member disposed above the wavelength conversion member via an air layer, and a second reflective member disposed around the light-transmissive member. An upper surface of the first reflective member has a first upper surface disposed around the wavelength conversion member and a second upper surface disposed outwardly of the first upper surface. A lower surface of the second reflective member has a first lower surface disposed around the light-transmissive member and a second lower surface disposed outwardly of the first lower surface. The air layer extends between the first upper surface of the first reflective member and the first lower surface of the second reflective member.
A method for manufacturing a light-emitting device includes: preparing a submount including a position specifying portion that specifies a position of a front surface; determining a first distance between a light-emitting end surface and a first alignment mark of a semiconductor laser element; disposing the semiconductor laser element so that the light-emitting end surface protrudes from the front surface of the submount in a top view; disposing a bridge-shaped member at a position overlapping with the light-emitting end surface and not overlapping with the first alignment mark and the position specifying portion; measuring a second distance between a position of the first alignment mark and a position of the front surface specified by the position specifying portion; calculating a third distance by subtracting the second distance from the first distance; and determining whether the light-emitting device is a defective product by comparing the third distance and a predetermined value.
A semiconductor laser element includes: a semiconductor layered portion including an active layer and having a waveguide structure, wherein the semiconductor layered portion includes: a first region including a diffraction grating, and a second region including a core region, and cladding regions located on both sides of the core region, the second region allowing laser light to propagate in a plurality of transverse modes. A width of the first region is greater than a width of the core region in a direction in which the core region and the cladding region are arranged. A current shielding structure is located at a position overlapping the first region in a top view, and includes one or more opening regions for injecting a current into the semiconductor layered portion in the first region. A total area of the one or more opening regions is smaller than an area of the first region in a top view.
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
An optical circuit includes a substrate; a first optical waveguide disposed on the substrate; and a second optical waveguide disposed on the substrate and configured to be optically coupled to the first optical waveguide. The first optical waveguide includes a first cladding, a second cladding, and a first core disposed between the first cladding and the second cladding. The second optical waveguide includes a third cladding, a fourth cladding, and a second core disposed between the third cladding and the fourth cladding. The first cladding is disposed closer to the substrate than the second cladding is. The third cladding is disposed closer to the substrate than the fourth cladding is. A material of the first cladding differs from a material of the third cladding.
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/13 - Circuits optiques intégrés caractérisés par le procédé de fabrication
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c.-à-d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
13.
POSITIVE ELECTRODE ACTIVE MATERIAL AND METHOD OF PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL
A method of producing a positive electrode active material, the method includes: contacting first particles that contain a lithium transition metal composite oxide with a solution containing sodium ions to obtain second particles containing the lithium transition metal composite oxide and sodium element, wherein the lithium transition metal composite oxide has a layered structure and a composition ratio of a number of moles of nickel to a total number of moles of metals other than lithium in a range of from 0.7 to less than 1; mixing the second particles and a boron compound to obtain a mixture; and heat-treating the mixture at a temperature in a range of from 100° C. to 450° C.
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p. ex. LiTi2O4 ou LiTi2OxFy
C01G 53/40 - Oxydes complexes contenant du nickel et au moins un autre élément métallique
C01G 53/42 - Oxydes complexes contenant du nickel et au moins un autre élément métallique contenant des métaux alcalins, p. ex. LiNiO2
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/131 - Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p. ex. LiCoOx
H01M 4/1391 - Procédés de fabrication d'électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p. ex. LiCoOx
14.
WAVELENGTH CONVERSION MEMBER AND MANUFACTURING METHOD THEREFOR
Provided is a wavelength conversion member in which discoloration from an end portion is inhibited. The wavelength conversion member includes a laminate that includes: a wavelength conversion layer containing quantum dots; and two barrier layers each laminated on one of main surfaces of the wavelength conversion layer and on the other main surface. In this wavelength conversion member, the barrier layers each have a first modification part on at least a portion of their end surfaces, the wavelength conversion layer has a second modification part on at least a portion of its end surface, and the second modification part is at least partially exposed on an end surface of the laminate.
A light emitting device including a plurality of light emitting elements for emitting light of different colors depending on a drive current. The device includes a display, a current driver that supplies the drive current, a lighting controller that controls the current driver so that the light emitting elements emit light of a predetermined emission color and luminance, and an information storage that stores current-chromaticity information for determining a drive current value for driving the light emitting elements, in accordance with the emission color to be emitted by the light emitting elements. The lighting controller determines the drive current value for driving the light emitting elements and an ON period for lighting the light emitting elements by referring to the current-chromaticity information, in accordance with the predetermined emission color and gradation information, and performs lighting driving of the light emitting elements using the drive current from the current driver.
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED]
A method for manufacturing a light-emitting device includes preparing and separating. In the preparing, a stacked body is prepared. The stacked body includes a substrate, a semiconductor layer, and a coating member. The substrate includes first and second surfaces. The second surface includes first and second regions. The separating includes first and second processes. In the first process, the substrate is separated from the semiconductor layer by irradiating the first region with a laser light of a first irradiation intensity. In the second process, the substrate is separated from the coating member by irradiating at least the second region with the laser light of a second irradiation intensity. The second irradiation intensity is lower than the first irradiation intensity. The second process is performed after the first process.
A fluid treatment device includes a flow path member having a flow path through which a fluid (e.g., water W) to be treated flows, first and second cover members forming spaces separated from the flow path and including light-transmissive parts disposed between the spaces, respectively, and the flow path, first and second light sources disposed in the spaces formed by the first and second cover members, respectively, to emit light toward the flow path, and a first light detector disposed in the space formed by the first cover member. A first light detector receives a first light flux that is emitted from the first light source and reaches the first light detector without passing through the flow path and a second light flux that is emitted from the first light source and reaches the first light detector after passing through the flow path.
A light-emitting device includes: a display comprising a plurality of pixels in which a plurality of first light-emitting elements each configured to emit light of a first light emission color and a plurality of second light-emitting elements each configured to emit light of a second light emission color different from the first light emission color are arranged in a predetermined pattern; and a lighting controller configured to supply a drive current to each of the plurality of first light-emitting elements and each of the plurality of second light-emitting elements and control a light emission period of each of the plurality of first light-emitting elements and each of the plurality of second light-emitting elements. A light emission color of a second light-emitting element of the plurality of second light-emitting elements is variable in accordance with a drive current supplied thereto.
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED]
19.
LIGHT-EMITTING DEVICE AND METHOD FOR DRIVING THE SAME
A light-emitting device includes: a display comprising a plurality of pixels in which a plurality of first light-emitting elements each configured to emit light of a first light emission color and a plurality of second light-emitting elements each configured to emit light of a second light emission color different from the first light emission color are arranged in a predetermined pattern; and a lighting controller configured to supply a drive current to each of the plurality of first light-emitting elements and the plurality of second light-emitting elements and control a light emission period of each of the plurality of first light-emitting elements and the plurality of second light-emitting elements. The second light emission color of a second light-emitting element, of the plurality of second light-emitting elements, is variable in accordance with a drive current.
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED]
A light-emitting device includes: a base member having an outer lateral surface, an upper surface meeting the outer lateral surface, and a recess on an upper surface side; a light-emitting element disposed in the recess; a lens disposed on the upper surface of the base member and including a lens portion and a flange portion; and a reflective member disposed in contact with the upper surface of the base member and a lateral surface of the flange portion.
A light-emitting module includes light source units arranged in a first direction and in a second direction orthogonal to the first direction. Each of the light source units includes at least one light-emitting element and a light-transmissive member covering the light-emitting element and having a lateral surface from which light from the light-emitting element is emitted. In a top view, on a normal line passing through a center of the lateral surface being Mth in the first direction and Nth in the second direction, the lateral surface being (M+1)th in the first direction and {N+L (where L is a natural number greater than or equal to 2)}th in the second direction is positioned, while no light source unit is present between the light source unit being the Nth in the second direction and the light source unit being the (N+L)th in the second direction on the normal line.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
F21V 8/00 - Utilisation de guides de lumière, p. ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage
A light-emitting device includes: a plurality of light-emitting elements arranged in an array on a base member; and a lens that includes at least one lens part disposed above the base member and including a first surface that faces the plurality of light-emitting elements, the first surface including a plurality of protrusions. The plurality of light-emitting elements include: a first light-emitting element having a center that faces a lens center of the lens in a top view, and a second light-emitting element having a center offset from the lens center of the lens in the top view.
A wavelength conversion module includes: a phosphor member; and a light-transmissive substrate that is directly bonded to the phosphor member, wherein a higher thermal conductivity of the light-transmissive substrate is higher than a thermal conductivity of the phosphor member, and the light-transmissive substrate has a thickness in a range from 100 μm to 600 μm.
To provide a light-emitting device that emits amber-colored light and has good temperature characteristics. The light-emitting device includes a light-emitting element having a light emission peak wavelength in a range from 380 nm to 470 nm, and a wavelength conversion member including phosphors that absorb at least a part of light from the light-emitting element and emit light. The phosphors include a first phosphor having a light emission peak wavelength in a range from 535 nm to 560 nm, having a half-value width in a range from 100 nm to 120 nm, and containing a nitride containing La, Ce, and Si, and a second phosphor having a light emission peak wavelength in a range from 605 nm to less than 620 nm, having a half-value width in a range from 70 nm to 80 nm, and containing a nitride containing at least one of Ca or Sr, and Eu, Si and Al. The light-emitting device emits light within a region defined by connecting (0.545, 0.425), (0.560, 0.440), (0.609, 0.390), and (0.597, 0.390) in an xy chromaticity coordinate system of a CIE1931 chromaticity diagram.
A vehicle lamp includes a first light source configured to emit light in a direction along a vertical direction; a first reflector having a first reflective surface that allows a portion of the light emitted from the first light source to be reflected forward; a second reflector having a pair of second reflective surfaces that allow light traveling without being reflected by the first reflective surface to be reflected leftward and rightward; a third reflector having a pair of third reflective surfaces that allow light reflected by the second reflective surfaces to be reflected forward; and a first lens that allows light reflected by the first reflective surface and light reflected by the pair of third reflective surfaces to exit forward through an exit surface. A maximum length of the first lens in the vertical direction is smaller than a maximum length of the first lens in a left-right direction.
F21S 41/33 - Réflecteurs à multi-surfaces, p. ex. réflecteurs à facettes ou réflecteurs avec des sections de courbure différente
F21S 41/40 - Dispositifs d’éclairage spécialement adaptés à l’extérieur des véhicules, p. ex. phares caractérisés par des écrans, des éléments non réfléchissants, des éléments faisant écran à la lumière ou des éléments d’occultation fixes
F21S 41/663 - Dispositifs d’éclairage spécialement adaptés à l’extérieur des véhicules, p. ex. phares caractérisés par une distribution lumineuse variable par action sur des sources lumineuses par commutation de sources lumineuses
Silicon-containing aluminum nitride particles contain a ratio of a total of a mass of aluminum and a mass of nitrogen of 90% by mass or more, and a ratio of a mass of silicon of 1.5% by mass or more and 10.0% by mass or less relative to a total of the mass of aluminum and the mass of silicon, as obtained by analyzing particles using an inductively coupled plasma-atomic emission spectroscope, and a mass of oxygen and the mass of nitrogen, as obtained by analyzing the particles using an oxygen/nitrogen analyzer, being 100% by mass, wherein a ratio (X/Y) is 0.40 or more and 0.85 or less, a ratio of the mass of oxygen is denoted as X % by mass, a specific surface area of the particles, as measured according to a BET method, is denoted as Y m2/g.
An image display device includes: a circuit element; a first wiring layer electrically connected to the circuit element; an insulating film covering the circuit element and the first wiring layer; a second wiring layer located on the insulating film; a light-emitting element located on the second wiring layer, the light-emitting element having a light-emitting surface opposite to a surface of the light-emitting element at a second wiring layer side; a light-transmissive insulating member covering at least a portion of the light-emitting element; and a third wiring layer located on the insulating member, the third wiring layer being electrically connected to the light-emitting element. The light-emitting element includes: a first semiconductor layer located on the second wiring layer, the first semiconductor layer, a light-emitting layer located on the first semiconductor layer, and a second semiconductor layer located on the light-emitting layer.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
H10H 20/851 - Moyens de conversion de la longueur d’onde
H10H 20/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
28.
WIRING BOARD, PLANAR LIGHT-EMITTING DEVICE, AND PRODUCTION METHODS THEREFOR
A method of manufacturing a wiring board includes: providing a substrate including an insulating resin and a metal member provided with an anti-rust layer on a surface facing a second surface of the insulating resin; forming a plurality of first holes passing through the metal member by etching; forming a second hole passing through the insulating resin and communicating with at least one of the first holes from a first surface side of the insulating resin; and filling an electroconductive paste to connect the second hole with any of the plurality of first holes and disposing the electroconductive paste on the first surface of the insulating resin to form wiring continuous with the filled electroconductive paste, the anti-rust layer on the surface of the metal member being removed from an inner bottom surface of the second hole in the forming of the second hole.
F21V 23/00 - Agencement des éléments du circuit électrique dans ou sur les dispositifs d’éclairage
F21Y 105/16 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la forme d’ensemble du réseau bidimensionnel carrée ou rectangulaire, p. ex. pour les panneaux de lumière
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A light-emitting device includes: a substrate having an upper surface; a light-transmissive member having a lower surface facing the upper surface of the substrate; a plurality of surface emitting laser elements disposed between the upper surface of the substrate and the lower surface of the light-transmissive member, the surface emitting laser elements being configured to perform top emission; and an intermediate conductive component disposed between the upper surface of the substrate and the lower surface of the light-transmissive member. The substrate includes a first conductive member and a second conductive member. The light-transmissive member includes a third conductive member electrically connected to the first conductive member by the intermediate conductive component. The plurality of surface emitting laser elements include a first laser element electrically connected to the third conductive member, and a second laser element electrically connected to the second conductive member.
A light-emitting device includes a light source, including a light-emitting element and an optical axis in a first direction, and an optical element. The optical element has a surface including an incident region, a first region that reflects, toward the light source, a first light entering the optical element through the incident region, a ring-shaped second region surrounding the first region, and a ring-shaped third region surrounding the incident region. The first region reflects, toward the light source a portion of the first light that reaches a central region, overlapping the light-emitting element when viewed in the first direction, of the first region, and a portion of the first light that reaches an outer region of the first region. The second region reflects a second light entering the optical element through the incident region. The third region reflects, toward the second region, the second light reflected by the second region.
A light-emitting device includes a substrate; a frame disposed on an upper surface of the substrate; a first light-emitting element disposed on the upper surface of the substrate and within a first region along an inner periphery of the frame; a second light-emitting element disposed on the upper surface of the substrate and within a second region surrounded by the first region; a wall part disposed on the upper surface of the substrate, contacting the frame, and extending from the inner periphery of the frame toward the second region; a wavelength conversion member disposed on the upper surface of the substrate and within a region surrounded by the frame, and covering the wall part, the first light-emitting element, and the second light-emitting element; and a circuit including a first drive circuit that drives the first light-emitting element and a second drive circuit that drives the second light-emitting element.
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
A light emitting element comprises a semiconductor structure that includes an n-side layer, a p-side layer, and an ultraviolet light emitting active layer interposed between these layers; an n-side electrode electrically connected to the n-side layer; and a p-side electrode electrically connected to the p-side layer. The n-side layer has an undoped first layer and a second layer positioned between the active layer and the first layer and containing an n-type impurity. The n-side electrode includes a first electrode and a second electrode that are in contact with the second layer, but not in contact with the first layer. The reflectance of the first electrode for a peak wavelength of light emitted from the active layer is higher than the reflectance of the second electrode for the peak wavelength of the light emitted from the active layer.
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
A light-emitting device includes a substrate; a first frame disposed on the substrate; a second frame disposed on the substrate and inward of the first frame; a first light-emitting element disposed on the substrate and between the first and second frames; a second light-emitting element disposed on the substrate and inward of the second frame; a first wavelength conversion member disposed on the substrate and within a region surrounded by the first frame, and covering the second frame, the first light-emitting element, and the second light-emitting element; and a circuit including a first drive circuit that drives the first light-emitting element and a second drive circuit that drives the second light-emitting element. The first wavelength conversion member includes a phosphor-containing portion, phosphor particles are present predominantly on a substrate side of the phosphor-containing portion, and a height of the second frame is less than a thickness of the phosphor-containing portion.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
A method of manufacturing a wiring substrate includes preparing a ceramic substrate including a ceramic plate having a first recessed portion disposed in a first surface, a second recessed portion disposed in a second surface opposite to the first surface, and a through hole connecting the first recessed portion and the second recessed portion. A metal member is disposed continuously in the first recessed portion, the second recessed portion, and the through hole. The method includes disposing a protective film on a part of the metal member, blasting an other part of the metal member and at least a part of the first surface of the ceramic plate, disposing a covering member in a recessed portion from which the other part of the metal member and the part of the first surface of the ceramic plate have been removed by the blasting, and removing the protective film.
A light-emitting device includes a light-emitting element, and a light-reflective member that includes an inorganic member and reflects light from the light-emitting element. The inorganic member contains silicon oxide, an alkali metal, and a hydroxide containing an alkaline earth metal.
A light source device includes: a combined body including light emitting portions including: a first light emitting portion including a first light emitting element, and a second light emitting portion provided separately from and along an outer periphery of the first light emitting portion in a plan view, the second light emitting portion including a plurality of second light emitting elements; and a lens disposed above the combined body. The lens includes an incident surface though which light emitted from the combined body enters the lens, and an exit surface from which light exits the lens, the exit surface being flat, and the incident surface including a convex portion and a plurality of concentric annular convex portions surrounding the convex portion. The first light emitting element and the plurality of second light emitting elements are arrayed in first and second directions that are perpendicular to each other.
A light-emitting device including a first electrically-conductive member and a second electrically-conductive member, solder on upper surfaces of the first and second electrically-conductive members, a light-emitting element bonded to the upper surfaces of the first and second electrically-conductive members with the solder, a light-transmitting member on an upper surface of the light-emitting element, and a cover member covering the upper surfaces of the first and second electrically-conductive members and a lateral surface of the light-emitting element. A lateral surface of the first electrically-conductive member includes a first recessed surface contiguous with the upper surface and a second recessed surface located at a lower level than the first recessed surface. The solder continuously covers the upper surface of the first electrically-conductive member and at least part of the first recessed surface, and the cover member further covers the solder covering the first recessed surface and at least part of the second recessed surface.
A light emitting device includes a base member, a submount, a semiconductor laser element, and a lens. The lens includes a lens portion having an incident surface and a lower surface. When a plane parallel to the lower surface of the lens portion and including a generatrix farthest from the emission end surface is defined as a reference plane, portions of the lens portion, each of which is within a range of a predetermined distance, are symmetrical with respect to the reference plane in a direction normal to the reference plane. A portion of the lens portion extends beyond the predetermined distance from the reference plane in a direction opposite to the lower surface. The lower surface of the lens portion is located at the predetermined distance from the plane. A gap is present between the lower surface of the lens portion and the upper surface of the base member.
A light emitting element includes: a semiconductor stack structure including: a first p-type semiconductor layer, a first active layer disposed on the first p-type semiconductor layer, a first n-type semiconductor layer disposed on the first active layer, an intermediate layer disposed on the first n-type semiconductor layer, a second p-type semiconductor layer disposed on the intermediate layer, a second active layer disposed on the second p-type semiconductor layer, and a second n-type semiconductor layer disposed on the second active layer, wherein: a plurality of first openings are continuously located in the first p-type semiconductor layer, the first active layer, and the first n-type semiconductor layer, and a plurality of second openings are continuously located in the first p-type semiconductor layer, the first active layer, the first n-type semiconductor layer, the intermediate layer, the second p-type semiconductor layer, the second active layer, and the second n-type semiconductor layer.
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
A light-emitting module includes: a substrate; a plurality of light source units, each including: a light source located on the substrate, and a lens on which light emitting from the light source is incident; a driver configured to rotate the plurality of light source units in a state in which the substrate and the plurality of light source units are fixed relative to each other; and a controller configured to control outputs of the plurality of light sources conjunctively with the driver. Among the lenses of the plurality of light source units, a number of the lenses configured to irradiate light while being on a trajectory in a first irradiation region centered on a rotation axis of the plurality of light source units is less than a number of the lenses configured to irradiate light while being on a trajectory in a second irradiation region centered on the rotation axis.
H10H 20/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21V 14/06 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs par un mouvement de réfracteurs
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
42.
METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE AND IMAGE DISPLAY DEVICE
An image display device includes: a circuit element; a first wiring layer electrically connected to the circuit element; a first insulating film covering the circuit element and the first wiring layer; a light-emitting element located on the first insulating film; a light-shielding layer located in the first insulating film between the circuit element and the light-emitting element; a second insulating film covering at least a portion of the light-emitting element; and a second wiring layer located on the second insulating film and electrically connected to the light-emitting element. The light-emitting element includes a first semiconductor layer of a first conductivity type, a light-emitting layer located on the first semiconductor layer, and a second semiconductor layer located on the light-emitting layer, the second semiconductor layer being of a second conductivity type that is different from the first conductivity type. In a plan view, the light-shielding layer covers the circuit element.
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
A light-emitting module includes: a substrate; plurality of light sources disposed on the substrate, the plurality of light sources including a red light source, a green light source, a blue light source, and an infrared light source; at least one light-receiving element disposed on the substrate; and a lens disposed facing the plurality of light sources and the at least one light-receiving element. The red light source includes: a first light-emitting element configured to emit blue light, and a first phosphor configured to convert a wavelength of at least part of the blue light emitted from the first light-emitting element to emit red light. The at least one light-receiving element is configured to output biological photodetection information obtained by receiving light that has been emitted from at least one of the plurality of light sources and reflected or scattered by a biological body.
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
F21V 14/02 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs par un mouvement de sources lumineuses
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
H10H 29/851 - Moyens de conversion de la longueur d’onde
H10H 29/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
A method for manufacturing a light-emitting device includes disposing a plurality of light-emitting elements on a support, each of the plurality of light emitting elements having an upper surface; disposing on the upper surfaces of the light-emitting elements and between adjacent light-emitting elements of the plurality of light-emitting elements an inorganic member having a void; forming a groove between the adjacent light-emitting elements in the inorganic member, and disposing a covering member on an upper surface of the inorganic member located above the light-emitting elements and in the groove to impregnate the void with a part of the covering member.
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
45.
RARE EARTH ALUMINATE PHOSPHOR AND PRODUCTION METHOD THEREOF, WAVELENGTH CONVERSION MEMBER, LIGHT EMITTING DEVICE, AND PROJECTOR
A rare earth aluminate phosphor includes: a first element M1 including at least one selected from the group consisting of yttrium (Y), lanthanum (La), lutetium (Lu), gadolinium (Gd), and terbium (Tb); cerium (Ce); aluminum (Al); oxygen atoms (O) and optionally a second element M2 including at least one selected from the group consisting of gallium (Ga) and scandium (Sc). The rare earth aluminate phosphor has a composition in which when a number of moles of oxygen atoms is 12, a total number of moles of the first element M1 and cerium is 2.9 or more and 3.1 or less, and a total number of moles of aluminum and the second element M2 is 4.5 or more and 5.5 or less, and has a reflection spectrum in which a ratio of reflectance at a wavelength of 280 nm to reflectance at a wavelength of 380 nm is 0.33 or more and 0.76 or less.
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
A lighting apparatus includes light emitting elements having an emission peak wavelength of 400 to 510 nm, a first phosphor having an emission peak wavelength of 485 to 700 nm, a second phosphor having an emission peak wavelength of 510 to 590 nm, a third phosphor having an emission peak wavelength of 600 to 700 nm, and a color filter having transmittance for light with a wavelength of 600 to 730 nm that is 80% or more and transmittance for light with a wavelength of 410 to 480 nm that is 3% or more and 50% or less. The color filter transmits a part of light emitted from the first phosphor, at least a part of light emitted from the second phosphor, and at least a part of light emitted from the third phosphor. Light transmitted through the color filter is emitted to the outside.
F21S 43/20 - Dispositifs de signalisation spécialement adaptés à l’extérieur des véhicules, p. ex. feux de freinage, feux clignotants indicateurs de direction ou feux de recul caractérisés par des réfracteurs, des glaces de fermeture transparentes, des guides ou des filtres de lumière
B60Q 1/34 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs ayant principalement pour objet d'indiquer le contour du véhicule ou de certaines de ses parties, ou pour engendrer des signaux au bénéfice d'autres véhicules pour indiquer un changement de direction
B60Q 1/44 - Agencement des dispositifs de signalisation optique ou d'éclairage, leur montage, leur support ou les circuits à cet effet les dispositifs ayant principalement pour objet d'indiquer le contour du véhicule ou de certaines de ses parties, ou pour engendrer des signaux au bénéfice d'autres véhicules pour indiquer le freinage
C09K 11/64 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant de l'aluminium
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
F21S 43/16 - Sources lumineuses où la lumière est générée par un matériau photoluminescent espacé par rapport à un élément générateur de lumière primaire
F21V 9/08 - Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p. ex. filtres pour produire une lumière colorée, p. ex. monochromatiqueÉléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p. ex. filtres pour réduire l’intensité de la lumière
F21V 9/32 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source caractérisés par la disposition du matériau photoluminescent
F21V 9/40 - Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p. ex. filtres avec des dispositions pour commander les propriétés spectrales, p. ex. la couleur, ou l’intensité
F21W 103/20 - Feux clignotants indicateurs de direction
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
The present invention provide an additive for bonded magnets which makes it possible to improve the fluidity of a thermoplastic resin-containing bonded magnet compound, the mechanical properties of a bonded magnet, and other properties, as well as methods of producing a bonded magnet compound or bonded magnet with improved such properties. The present invention relates to an additive for thermoplastic resin-containing bonded magnets containing a cured product of a thermosetting resin and a curing agent having a ratio of the number of reactive groups of the curing agent to the number of reactive groups of the thermosetting resin of at least 2 but not higher than 11.
C08L 63/00 - Compositions contenant des résines époxyCompositions contenant des dérivés des résines époxy
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
A light source includes a plurality of light emitting elements, a plurality of light-transmissive members, and a light-blocking member. The light-transmissive members are respectively arranged above the light emitting elements. The light-transmissive members include a plurality of first light-transmissive members each containing a first phosphor, and a plurality of second-color light-transmissive members each containing a second phosphor configured to emit light having a different color from light emitted from the first phosphor. At least one of the first light-transmissive members is arranged between adjacent ones of the second light-transmissive members in a plan view. The light-blocking member covers lateral surfaces of the light-transmissive members while upper surfaces of the light-transmissive members are exposed from the light-blocking member.
F21K 9/66 - Détails des globes ou des couvercles faisant partie de la source lumineuse
F21K 9/64 - Agencements optiques intégrés dans la source lumineuse, p. ex. pour améliorer l’indice de rendu des couleurs ou l’extraction de lumière en utilisant des moyens de conversion de longueur d’onde distincts ou espacés de l’élément générateur de lumière, p. ex. une couche de phosphore éloignée
A light-emitting module includes: a light source including a plurality of light-emitting parts having respective light-emitting surfaces and including: at least one first light-emitting part configured to emit light having a first chromaticity, and at least one second light-emitting part configured to emit light having a second chromaticity different from the first chromaticity; a lens configured to transmit light from the light source; an actuator configured to change at least one of a relative position between the light source and the lens in a direction intersecting an optical axis of the lens or a relative inclination of the optical axis of the lens with respect to a corresponding one of the light-emitting surfaces; and a controller configured to control light emission of each of the plurality of light-emitting parts and operation of the actuator.
F21V 14/06 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs par un mouvement de réfracteurs
F21Y 105/12 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la disposition géométrique des éléments générateurs de lumière, p. ex. par la disposition des éléments générateurs de lumière en différents schémas ou densités
F21Y 113/10 - Combinaison de sources lumineuses de couleurs différentes
A light-emitting device includes a semiconductor laser element, an optical member, and a mounting member. The semiconductor laser element has a light-emitting surface. The optical member has a light incident surface and includes a conductive portion. The mounting member has a mounting surface on which first and second conductive regions, and an insulating region are provided. The second conductive region is insulated from the first conductive region via the insulating region. The semiconductor laser element is disposed in the first conductive region of the mounting surface. The optical member is disposed on the mounting surface such that the conductive portion and the mounting surface face each other and the conductive portion overlaps at least portions of the first and second conductive regions in a plan view. The semiconductor laser element is electrically connected to the second conductive region via the conductive portion.
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/02315 - Éléments de support, p. ex. bases ou montures
Provided is a laser welding method for welding a metal material and a laminated body of metal foil together by irradiation with laser light. The laser welding method includes: a first step of forming a first weld part in which at least a plurality of the metal foils included in the laminated body are welded by emitting the laser light; and a second step of welding the laminated body and the metal material together by irradiating the laser light onto a region at least partially including the first weld part.
A light-emitting device includes a first substrate, a second substrate disposed above the first substrate, a plurality of light-emitting elements disposed on the second substrate, and a bonding member bonding a lower surface of the second substrate to the upper surface of the first substrate. The second substrate has a shape elongated in a first direction when viewed from above the second substrate, and has a thermal expansion coefficient different from that of the first substrate. The bonding member includes a first portion having a length in the first direction equal to or less than a length in a second direction orthogonal to the first direction, and second portions disposed on opposite sides of the first portion in the first direction, respectively. Each of the second portions has a Young's modulus and a thermal conductivity lower than those of the first portion.
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
F21S 41/143 - Diodes électroluminescentes [LED] la direction principale d’émission des LED étant parallèle à l’axe optique du dispositif d’éclairage
F21S 41/153 - Diodes électroluminescentes [LED] disposées sur une ou plusieurs lignes disposées dans une matrice
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
53.
PARTITIONING MEMBER, PLANAR LIGHT SOURCE, AND LIQUID CRYSTAL DISPLAY DEVICE
A planar light source includes a substrate, a plurality of light sources arranged on the substrate, and at least one partitioning member disposed on the substrate. The at least one partitioning member includes: a plurality of first ridges extending in a first direction; a plurality of first wall parts, each first wall part having a predetermined height, at least two sides of each first wall part facing each other; a plurality of partitioned regions, each partitioned region being partitioned by the plurality of first ridges in a plan view, the plurality of partitioned regions arranged in a second direction intersecting the first direction; at least one first cut provided on a corresponding one of the plurality of first ridges; and at least one of the light sources arranged in a corresponding one of the plurality of partitioned regions.
A light-emitting element includes: a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a fourth semiconductor layer in this order. The first semiconductor layer is Alx1Iny1Ga1-x1-y1N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), the second semiconductor layer is Alx2Iny2Ga1-x2-y2N (0≤x2≤1, 0≤y2≤1, 0≤x2+y2≤1), the third semiconductor layer is Alx3Iny3Ga1-x3-y3N (0≤x3≤1, 0≤y3≤1, 0≤x3+y3≤1), and the fourth semiconductor layer is Alx4Iny4Ga1-x4-y4N (0≤x4≤1, 0≤y4≤1, 0≤x4+y4≤1).
H01L 33/14 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure contrôlant le transport des charges, p.ex. couche semi-conductrice fortement dopée ou structure bloquant le courant
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
A method of manufacturing a light emitting device includes: preparing a light emitting element comprising an external terminal having a first portion located on a semiconductor structure side and a second portion disposed on the first portion, wherein an area of the second portion is less than an area of the first portion; preparing a substrate having a wiring part; bonding the light emitting element and the wiring part by bringing the second portion of the external terminal into contact with the wiring part; and subsequent to bonding the light emitting element and the wiring part, forming plating continuously on lateral faces of the first and second portions, wherein a thickness of the second portion is 5 μm at most, and wherein the plating is formed such that the plating formed on the wiring part is in contact with the plating formed on the first portion.
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
A sintered body contains a fluorescent material being at least one selected from the group consisting of a nitride fluorescent material having a composition of formula (I) and an α-SiAlON fluorescent material having a composition of formula (II), and emits light having a color tone in an area A1 surrounded by lines connecting a point 1a (x=0.549, y=0.425), a point 2a (x=0.562, y=0.438), a point 3a (x=0.589, y=0.411), and a point 4a (x=0.576, y=0.407) in the chromaticity diagram of the CIE 1931 color system upon irradiation with excitation light, wherein, upon irradiation with excitation light, the light emitted from the sintered body has an emission spectrum in which an integral value ratio Z2/Z1 as described in the disclosure is 0.005 or more.
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
57.
COMPOUND FOR BONDED MAGNET, BONDED MAGNET, METHOD OF PRODUCING SAME, AND RESIN COMPOSITION FOR BONDED MAGNETS
A method of producing a compound for bonded magnets, the method including: heat-curing a thermosetting resin and a curing agent having a ratio of the number of reactive groups of the curing agent to the number of reactive groups of the thermosetting resin of at least 2 but not higher than 11 to obtain an additive for bonded magnets; and kneading the additive for bonded magnets, magnetic powder, and a thermoplastic resin to obtain a compound for bonded magnets in which a filling ratio of the magnetic powder is at least 91.5% by mass.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
B29C 45/00 - Moulage par injection, c.-à-d. en forçant un volume déterminé de matière à mouler par une buse d'injection dans un moule ferméAppareils à cet effet
B29K 77/00 - Utilisation de polyamides, p. ex. polyesteramides, comme matière de moulage
B29K 505/00 - Utilisation de métaux, leurs alliages ou leurs composés comme matière de remplissage
H01F 1/057 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments IIIa, p. ex. Nd2Fe14B
A light-emitting module includes: a first light source; and a second light source disposed separated from the first light source in a top view. The first light source includes: a plurality of light-emitting parts including a first light-emitting part and a plurality of second light-emitting parts arranged around the first light-emitting part, and a light-shielding member disposed between the plurality of light-emitting parts such that light-emitting surfaces of the plurality of respective light-emitting parts are exposed from the light-shielding member. The second light source comprises a third light-emitting part electrically connected in parallel with the first light-emitting part. Light emitted from the first light-emitting part and light emitted from the third light-emitting part at least partially overlap each other on an irradiation surface.
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A nitride semiconductor light emitting element includes a semiconductor structure including an n-side semiconductor layer, a p-side semiconductor layer, and an active layer disposed between the n-side semiconductor layer and the p-side semiconductor layer, and a p-side electrode disposed on the p-side semiconductor layer. The p-side semiconductor layer includes a first semiconductor part that includes, successively from the p-side electrode side, a first layer contacting the p-side electrode and containing Al and a p-type impurity, a second layer containing a p-type impurity and having a lower Al composition ratio and a lower p-type impurity concentration than those of the first layer, and a third layer containing a p-type impurity and having a higher Al composition ratio and a lower p-type impurity concentration than that of the first layer, and a larger thickness than the thicknesses of the first and second layers.
H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
A method for manufacturing a magnet unit includes: a process of placing a holding member in a mold, the holding member including a first surface, a second surface, and multiple holes extending from the first surface to the second surface, the mold including one or more gas venting grooves, the process of placing in the mold causing the second surface to face the one or more gas venting grooves and causing two or more of the multiple holes to be connected to each other via the one or more gas venting grooves; a process of injection-molding a magnetic material into the multiple holes of the holding member that is placed in the mold from a side of the first surface; and a process of removing the holding member from the mold.
H02K 15/03 - Procédés ou appareils spécialement adaptés à la fabrication, l'assemblage, l'entretien ou la réparation des machines dynamo-électriques des corps statoriques ou rotoriques comportant des aimants permanents
H02K 1/27 - Noyaux rotoriques à aimants permanents
A light-emitting device includes: a base having an upper surface; a lid body having an upper surface and a lower surface bonded to the base; and a lens member having a lower surface bonded to the lid body. An outer edge of the upper surface of the base has first and second sides parallel to each other. An outer edge of the lower surface of the lid body has first and second sides parallel to each other. In a top view, a distance from the second side of the base to the second side of the lid body is greater than a distance from the first side of the base to the first side of the lid body. A distance from the first side of the lid body to a lens surface is smaller than a distance from the second side of the lid body to the lens surface.
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
A method for manufacturing a light-emitting device including providing a first structure having a support substrate, a first bonding member on a surface thereof, and light-emitting elements having a first surface in contact with the first bonding member, an opposite second surface, and electrodes on a second surface side. The method includes providing a second structure having a substrate including a base member and terminal portions on a surface thereof, and a second bonding member between the terminal portions and thicker than the terminal portions. The method includes disposing the first structure on the second bonding member such that respective electrodes and respective terminal portions are spaced apart from and facing each other, connecting the respective electrodes and the respective terminal portions, and after the connecting, exposing the first and second bonding members to a solution to remove them to separate off the support substrate from the light-emitting elements.
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A light-emitting module includes: a substrate; a light source disposed on the substrate; an electronic component disposed on the substrate and separated from the light source; and a first light-transmissive member including a first lens and a first support, and covering the light source and the electronic component, the first support supporting the first lens and including a light diffusing substance. A light diffusivity of the first support is higher than a light diffusivity of the first lens. The first lens overlaps the light source and the first support overlaps the electronic component in a top view.
F21V 33/00 - Combinaisons structurales de dispositifs d'éclairage avec d'autres objets, non prévues ailleurs
F21V 3/06 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements caractérisés par le matériau
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21V 17/06 - Fixation des parties constitutives des dispositifs d'éclairage, p. ex. des abat-jour, des globes, des réfracteurs, des réflecteurs, des filtres, des écrans, des grilles ou des cages de protection sur le support de la source lumineuse ou par son intermédiaire
64.
LIGHT EMITTING DEVICE, RESIN PACKAGE, RESIN-MOLDED BODY, AND METHODS FOR MANUFACTURING LIGHT EMITTING DEVICE, RESIN PACKAGE AND RESIN-MOLDED BODY
A light emitting device includes: a resin package comprising a first lead, a second lead, and a resin part; and a light emitting element disposed on the first lead. The resin package has a rectangular shape in top view and comprises a first outer lateral surface, a second outer lateral surface on a side opposite the first outer lateral surface, a third outer lateral surface, and a fourth outer lateral surface on a side opposite the third outer lateral surface. At the first outer lateral surface, the first lead is exposed from the resin part, and the first lead and a portion of the resin part located at a lateral edge of the first lead are substantially coplanar with each other.
B29C 45/00 - Moulage par injection, c.-à-d. en forçant un volume déterminé de matière à mouler par une buse d'injection dans un moule ferméAppareils à cet effet
B29C 45/14 - Moulage par injection, c.-à-d. en forçant un volume déterminé de matière à mouler par une buse d'injection dans un moule ferméAppareils à cet effet en incorporant des parties ou des couches préformées, p. ex. moulage par injection autour d'inserts ou sur des objets à recouvrir
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A light emitting module includes: a light source including a plurality of light emitting parts that are configured to be turned on individually or configured to be turned on in groups of multiple light emitting parts; and a cover member disposed over the light source and configured to transmit light from the light source, the cover having an upper surface that includes a flat surface portion. The cover member includes, in a top view: a first region, a second region located around the first region, wherein a light diffusion effect of the second region is higher than a light diffusion effect of the first region, and a third region located inward of the first region and on which the light from the light source transmitted through the light from the light source is incident.
A method for producing a rare earth magnet that can improve magnetic properties by both increasing a density of a sintered body and suppressing strain of a magnetic phase. The method includes preparing a magnetic powder containing Sm, Fe, and N, preparing a modifier powder containing at least one of metallic zinc or a zinc alloy, mixing the magnetic powder and the modifier powder to obtain a mixed powder, performing compression molding on the mixed powder in a magnetic field to obtain a magnetic field molded body, and performing pressure sintering on the magnetic field molded body to obtain a sintered body. In the pressure sintering, the magnetic field molded body is pressed and sintered at a pressure of 500 MPa or more and 900 MPa or less and at a temperature of 360° C. or more and 390° C. or less for 1 hour or more and 24 hours or less.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
C22C 38/12 - Alliages ferreux, p. ex. aciers alliés contenant du tungstène, du tantale, du molybdène, du vanadium ou du niobium
C22C 38/14 - Alliages ferreux, p. ex. aciers alliés contenant du titane ou du zirconium
H01F 1/059 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5 et des éléments Va, p. ex. Sm2Fe17N2
A semiconductor laser element includes a semiconductor multilayer portion including an active layer, the semiconductor multilayer portion including (i) a first region including a diffraction grating and (ii) a second region configured to cause laser light to propagate in multiple transverse modes in the second region, the second region including a core region and cladding regions provided on two opposite sides of the core region; at least one electrode disposed on the semiconductor multilayer portion; and a current shielding structure. The semiconductor laser element has a waveguide structure. In a top view, the first region includes a central region where light entering from the second region is propagated and a peripheral region located outward of the central region. In a top view, the current shielding structure is located at a position at least partially overlapping the peripheral region.
H01S 5/12 - Structure ou forme du résonateur optique le résonateur ayant une structure périodique, p. ex. dans des lasers à rétroaction répartie [lasers DFB]
H01S 5/22 - Structure ou forme du corps semi-conducteur pour guider l'onde optique ayant une structure à nervures ou à bandes
68.
METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE AND IMAGE DISPLAY DEVICE
An image display device includes: a light-transmitting substrate including a first surface; a circuit element located on the first surface; a first wiring layer electrically connected to the circuit element; a first insulating film covering the circuit element and the first wiring layer on the first surface; a conductive layer that comprises a light-reflective part and is located on the first insulating film; a first light-emitting element located on the light-reflective part and electrically connected to the light-reflective part; a second insulating film covering the first insulating film, the conductive layer, and at least a portion of the first light-emitting element; a second wiring layer located on the second insulating film, the second wiring layer being electrically connected to a surface of the first light-emitting element; and a first via extending through the first and second insulating films and electrically connecting the first wiring layer and the second wiring.
H10H 29/14 - Dispositifs intégrés comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs composants émetteurs de lumière à semi-conducteurs
The aim is to provide a light emitting element and a light emitting device that can achieve higher light extraction efficiency. A light emitting element comprises a substrate, a semiconductor structure disposed on the substrate and including successively from the substrate side an n-side semiconductor layer, an active layer, and a p-side semiconductor layer, a p-electrode disposed on and electrically connected to the p-side semiconductor layer, and an n-electrode disposed on and electrically connected to the n-side semiconductor layer. The n-electrode includes a base and a plurality of extended parts extending from the base. The substrate includes an exposed portion exposed from the semiconductor structure, and the exposed portion includes a first exposed portion positioned between two adjacent extended parts and a second exposed portion disposed in the peripheral portion of the substrate and connected to the first exposed portion in a top view. The p-electrode is positioned between the extended parts and the first exposed portion in a top view.
H10H 20/831 - Électrodes caractérisées par leur forme
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
H10H 20/854 - Encapsulations caractérisées par leurs matériaux, p. ex. résines époxy ou silicone
An optical device includes a laser light source; a first optical integrator configured to transmit laser light emitted from the laser light source; a second optical integrator configured to transmit the laser light emitted from the first optical integrator; and a retardation plate disposed between the laser light source and the second optical integrator, and configured to transmit a portion of the laser light so as to rotate a polarization of the transmitted portion of the laser light by 90 degrees.
A light-emitting device includes: a light-emitting element emitting a first light having a first peak wavelength; a first wavelength conversion member contacting a side surface of the light-emitting element and including a wavelength conversion material absorbing at least a portion of the first light and emitting a second light having a second peak wavelength different from the first peak wavelength; a second wavelength conversion member on the first wavelength conversion member, the second wavelength conversion member including a wavelength conversion material absorbing at least a portion of the first light and emitting a third light having a third peak wavelength different from the first and second peak wavelengths; and a first light-reflective member on the second wavelength conversion member and at least on the light-emitting element. A continuous light-emitting surface includes a side surface of the first wavelength conversion member and a side surface of the second wavelength conversion member.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
72.
LIGHT-EMITTING MODULE AND METHOD FOR MANUFACTURING LIGHT-EMITTING MODULE
A light-emitting module includes: a light-emitting device; and a base that is electroconductive, the base including: a mounting surface that faces a first direction and on which the light-emitting device is mounted with a bonding material, and at least one protrusion that is adjacent to the mounting surface in a direction intersecting the first direction and protrudes in the first direction with respect to the mounting surface. The at least one protrusion includes a plurality of first surfaces that are in contact with the light-emitting device. The light-emitting device includes a light-emitting element and has a side surface at which an electroconductive part electrically connected to an electrode of the light-emitting element is exposed. The side surface is partially in contact with the first surfaces, and a part of the side surface at which the electroconductive part is exposed is not in contact with the first surfaces.
H01S 5/02257 - Découplage de lumière utilisant des fenêtres optiques, p. ex. spécialement adaptées pour réfléchir de la lumière sur un détecteur à l’intérieur du boîtier
H01S 5/02315 - Éléments de support, p. ex. bases ou montures
H01S 5/0236 - Fixation des puces laser sur des supports en utilisant un adhésif
73.
LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
A light emitting device includes: an inner light emitting part including an inner light emitting element, and an inner wavelength conversion member disposed on the inner light emitting element, and a plurality of outer light emitting parts disposed around the inner light emitting part and connected in parallel to one another, each outer light emitting part including an outer light emitting element, and an outer wavelength conversion member disposed on the outer light emitting element. The outer light emitting parts include a first light emitting part that includes a first light emitting element and a first wavelength conversion member, and a second light emitting part that includes a second light emitting element and a second wavelength conversion member.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
A light-emitting device includes a light-emitting element and a plate-shaped light-transmissive member. The plate-shaped light-transmissive member is disposed on or above the light-emitting element. The light-transmissive member has a lower surface configured to receive light emitted from the light-emitting element and an upper surface opposite to the lower surface. The upper surface of the light-transmissive member serves as an emission surface. The light-transmissive member includes a first light-transmissive portion including a first sintered body containing a phosphor particle, and a second light-transmissive portion including a second sintered body containing a light-diffusing particle. The second sintered body has a relative density of 70% or more and 95% or less. The emission surface includes a first light-emitting region configured to emit light through the first light-transmissive portion, and a second light-emitting region configured to emit light through the second light-transmissive portion at a lower luminance than in the first light-emitting region.
F21V 3/08 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements caractérisés par le matériau le matériau comprenant des substances photoluminescentes
F21V 9/32 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source caractérisés par la disposition du matériau photoluminescent
F21V 19/00 - Montage des sources lumineuses ou des supports de sources lumineuses sur ou dans les dispositifs d'éclairage
A light source unit includes: a display device configured to emit light that has a substantially Lambertian light distribution and to display a picture; a first prism sheet on which the light emitted from the display device is incident; and an imaging optical system that includes an input element on which light emitted from the first prism sheet is incident and an output element on which light that has passed through the input element is incident, and configured such that light emitted from the output element forms a first image corresponding to the picture. The imaging optical system has a substantially telecentric property on a side of the first image.
A method of manufacturing a light-emitting device includes: providing a substrate including a base, and a pair of wiring parts disposed on an upper surface side of the base; providing a light-emitting element including a semiconductor structure, and a pair of electrodes; disposing the light-emitting element above the substrate such that the electrodes face the wiring parts; disposing an electrically-conductive member containing copper such that the electrically-conductive member electrically connects the wiring parts to the electrodes and includes a body portion and a protruding portion, the body portion overlapping a corresponding wiring part of the wiring parts in a top view, and the protruding portion protruding outward such that a gap is located between the protruding portion and the base; and disposing a protective film at least in the gap in a state in which the gap is widened by heating the electrically-conductive member.
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A method of manufacturing a light-emitting device includes: preparing at least one first structure including a support substrate, an adhesive layer, and light-emitting elements each having a first surface, and a second surface, and comprising a pair of element electrodes disposed on a second surface side; preparing a second structure including a substrate including a base and a plurality of pairs of wirings, and a bonding member disposed between a pair of wirings of the plurality of pairs of wirings; obtaining a third structure by causing the pair of element electrodes to face the pair of wirings and bonding each of light-emitting elements to the substrate with the bonding member interposed therebetween in a state in which the light-emitting elements and the substrate are heated at a first temperature; heating the third structure at a second temperature equal to or higher than the first temperature; and removing the support substrate from the third structure.
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
78.
PLURALITY OF LIGHT-EMITTING DEVICES AND MANUFACTURING METHOD OF A PLURALITY OF LIGHT-EMITTING DEVICES
A plurality of light-emitting devices includes first, second, and third light-emitting devices. The first/second light-emitting device includes a first/second semiconductor laser element configured to emit light of a first/second color having a light emission peak wavelength of a first/second wavelength and a first/second reflective member having a reflectance of 90% or more with respect to the first/second wavelength. The third light-emitting device includes third and fourth semiconductor laser elements configured to emit light of the first and second colors having light emission peak wavelengths of third and fourth wavelengths, respectively, and a plurality of third reflective members having a reflectance of 90% or more with respect to the third wavelength and the fourth wavelength. A reflectance of the third reflective member with respect to light having the first/second wavelength is higher than a reflectance of the second/first reflective member with respect to the light having the first/second wavelength.
A method of producing a substrate includes: providing a ceramic substrate having a first surface and a second surface that is located opposite the first surface; irradiating a first part of the first surface with a first laser light having a first pulse width to perform ablation of the first part of the ceramic substrate; and irradiating a second part of either the first surface or the second surface with a second laser light having a second pulse width, which is longer than the first pulse width, the second part being located apart from the first part in a plan view to perform thermal processing of a third part including the first part and the second part. Upon removal of the third part and a part enclosed by the third part, an aperture that extends from the first surface to the second surface is formed in the ceramic substrate.
B23K 26/384 - Enlèvement de matière par perçage ou découpage par perçage de trous de forme spéciale
B23K 26/0622 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples par commande directe du faisceau laser par impulsions de mise en forme
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
A light source device includes a substrate, a laser element on a main surface of the substrate and configured to emit laser light, an optical element on the main surface of the substrate and in an optical path of the laser light, and a polarization element on the optical element. The optical element has a first surface that reflects in a first direction a first component of the laser light incident onto the optical element from the laser element, and a second surface that reflects in the first direction a second component of the laser light incident onto the optical element from the laser element and transmitted through the first surface. The first component of the laser light reflected by the first surface is not transmitted through the polarization element and the second component of the laser light reflected by the second surface is transmitted through the polarization element.
A method for manufacturing a light-emitting device includes: providing a structure including: a substrate including a plurality of positive and negative wiring parts at an upper surface of the substrate, and a light source part disposed on the substrate, the light source part including: an element substrate, and a plurality of light-emitting parts, each of the light-emitting parts including: a semiconductor structure including a first surface facing the element substrate and a second surface positioned at a side opposite to the first surface, and positive and negative electrode parts disposed on the second surface of the semiconductor structure; providing a mold including an upper mold and a lower mold; disposing a first resin part between the upper surface of the substrate and the second surfaces of the semiconductor structures; and removing the element substrate from the light source part.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
82.
ß-SIALON FLUORESCENT MATERIAL AND LIGHT EMITTING DEVICE
A β-SiAlON fluorescent material includes fluorescent material particles having a composition represented by the following formula (I), and a coating layer formed on the surface of the fluorescent material particles and having a refractive index smaller than that of the fluorescent material particles, wherein when the β-SiAlON fluorescent material is measured by inductively coupled plasma-atomic emission spectroscopy, an amount of the coating layer is 0.4% by mass or more relative to a total amount of the fluorescent material particles and the coating layer being 100% by mass:
A β-SiAlON fluorescent material includes fluorescent material particles having a composition represented by the following formula (I), and a coating layer formed on the surface of the fluorescent material particles and having a refractive index smaller than that of the fluorescent material particles, wherein when the β-SiAlON fluorescent material is measured by inductively coupled plasma-atomic emission spectroscopy, an amount of the coating layer is 0.4% by mass or more relative to a total amount of the fluorescent material particles and the coating layer being 100% by mass:
Si6-zAlzOzN8-z:Euy (I),
A β-SiAlON fluorescent material includes fluorescent material particles having a composition represented by the following formula (I), and a coating layer formed on the surface of the fluorescent material particles and having a refractive index smaller than that of the fluorescent material particles, wherein when the β-SiAlON fluorescent material is measured by inductively coupled plasma-atomic emission spectroscopy, an amount of the coating layer is 0.4% by mass or more relative to a total amount of the fluorescent material particles and the coating layer being 100% by mass:
Si6-zAlzOzN8-z:Euy (I),
wherein y and z satisfy 0
C09K 11/77 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
A nitride semiconductor light emitting element includes: a first n-type semiconductor layer, a first p-type semiconductor layer disposed above and in contact with the first n-type semiconductor layer; a first superlattice layer disposed above the first p-type semiconductor layer and containing a p-type impurity; an active layer disposed above the first superlattice layer, a second n-type semiconductor layer disposed above the active layer; a first electrode electrically connected to the first n-type semiconductor layer; and a second electrode electrically connected to the second n-type semiconductor layer.
H01L 33/04 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel
H01L 33/02 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs
H01L 33/08 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une pluralité de régions électroluminescentes, p.ex. couche électroluminescente discontinue latéralement ou région photoluminescente intégrée au sein du corps semi-conducteur
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
A light emitting element includes: a semiconductor structure including: a first semiconductor layer that has: a first face that has a peripheral region, and a central region surrounded by the peripheral region in a plan view, wherein a surface roughness of the central region is higher than a surface roughness of the peripheral region, and a second face that opposes the first face and has a first region and a second region, an active layer disposed on the first region, and a second semiconductor layer disposed on the active layer; a first electrode disposed on the second region and electrically connected to the first semiconductor layer; a second electrode disposed on the second semiconductor layer and electrically connected to the second semiconductor layer; a first reflecting film disposed only on the peripheral region among the surfaces of the semiconductor structure; and a first protective film disposed on the central region.
H01L 33/46 - Revêtement réfléchissant, p.ex. réflecteur de Bragg en diélectriques
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 33/22 - Surfaces irrégulières ou rugueuses, p.ex. à l'interface entre les couches épitaxiales
A light-emitting device according to an embodiment of the present disclosure includes: a light-emitting element; a base having an upper surface opposite to a lower surface of the light-emitting element, the base directly or indirectly supporting the light-emitting element; a lid body having a flat plate-like shape and having a lower surface opposite to an upper surface of the light-emitting element; and a first frame portion located on the upper surface of the base and surrounding the light-emitting element, in which the base includes a first conductor portion bonded to the lower surface of the light-emitting element, the lid body includes a second conductor portion bonded to the upper surface of the light-emitting element, and the first frame portion is directly or indirectly bonded to the lid body.
A light-emitting device includes a package and a semiconductor laser element. The package includes a frame portion, a lid portion, a base having a thickness in a range from 100 μm to 500 μm, and a first metal member arranged on upper or lower surface of the base, the first metal member having a thickness in a range from 10 μm to 150 μm. The base includes an insulating member having upper and lower surfaces respectively defining the upper and lower surfaces of the base. The insulating member defines a first through hole extending from the upper surface to the lower surface of the insulating member. A first conductive member is arranged in the first through hole. The first metal member covers the first through hole. The semiconductor laser element is electrically connected to the first conductive member and the first metal member.
A light-emitting device includes a base, a first metal member, a second metal member, a semiconductor laser element, and a lid body. The base has an upper surface and a lower surface. The first metal member is disposed on the upper surface of the base and has a thickness in a vertical direction in a range from 50 μm to 150 μm. The second metal member is disposed on the upper surface of the base and has a thickness in the vertical direction identical to the thickness of the first metal member. The second metal member is spaced apart from the first metal member in a top view and surrounds the first metal member. The semiconductor laser element is disposed on the first metal member. The lid body is bonded to the base via the second metal member.
A freshness preservation method for fruits and vegetables includes irradiating fruits or vegetables within 24 hours after harvest with light having a peak wavelength in a range from 256 nm to 297 nm, thereby extending, by equal to or greater than 25% compared to when the fruits or the vegetables are not irradiated by the light, time for preserving equal to or greater than 95% of a weight of the fruits or the vegetables before light irradiation.
A23B 7/015 - Conservation par irradiation ou traitement électrique sans effet de chauffage
A23L 3/00 - Conservation des aliments ou produits alimentaires, en général, p.ex. pasteurisation ou stérilisation, spécialement adaptée aux aliments ou produits alimentaires
A23L 3/28 - Conservation des aliments ou produits alimentaires, en général, p.ex. pasteurisation ou stérilisation, spécialement adaptée aux aliments ou produits alimentaires par irradiation sans chauffage par radiations ultraviolettes
89.
WIRING SUBSTRATE, COMPOSITE SUBSTRATE, AND MANUFACTURING METHOD OF WIRING SUBSTRATE
A wiring substrate includes a ceramic substrate having an upper surface, a lower surface, and a lateral surface. The lower surface includes a first lower surface and a second lower surface inward from the first lower surface. The lateral surface includes a first lateral surface and a second lateral surface inward from the first lateral surface. The wiring substrate includes a first wiring having a thickness of 80% or more of a height from the second lower surface to the first lower surface and disposed in contact with the second lower surface and the second lateral surface. A lateral surface of the first wiring is exposed from the first lateral surface. A main surface of 50% or more of a surface area of a lower surface of the first wiring is substantially parallel to the second lower surface and is disposed inward from the first lower surface.
C04B 41/90 - Revêtement ou imprégnation pour obtenir au moins deux revêtements superposés de compositions différentes au moins une couche comportant un métal
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/498 - Connexions électriques sur des substrats isolants
A substrate includes a first member having a through hole extending from an upper surface to a lower surface thereof, and a second member disposed inside the through hole. The second member includes a first region containing graphite, a second region located outward of the first region in a top view, containing graphite and a thermally conductive material that contains at least one of a metal or a ceramic, and having a volume fraction of the graphite lower than a volume fraction of the graphite in the first region, and a third region located outward of the second region in the top view, containing a thermally conductive material that contains at least one of a metal or a ceramic, and having a volume fraction of the thermally conductive material higher than a volume fraction of the thermally conductive material in the second region.
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A light-emitting module includes: a light source; a lens located over the light source and configured to transmit light from the light source; and a cover member located over the lens and having a lower surface on which the light is to be incident and an upper surface from which the light is to be emitted, where the lower surface of the cover member includes: a first region on which the light from the light source after being transmitted through the lens is to be incident, and a second region located around the first region, a light diffusivity of the second region being higher than a light diffusivity of the first region; and a light-transmissive member covering the upper surface of the cover member and having a higher hardness than a hardness of the cover member.
F21V 3/10 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements caractérisés par des revêtements
F21V 3/04 - GlobesVasquesVerres de protection caractérisés par les matériaux, traitements de surface ou revêtements
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21Y 105/16 - Sources lumineuses planes comprenant un réseau bidimensionnel d’éléments générateurs de lumière ponctuelle caractérisées par la forme d’ensemble du réseau bidimensionnel carrée ou rectangulaire, p. ex. pour les panneaux de lumière
A light transmissive member, a light source device, a method of producing a light transmissive member, and a method of producing a light source device, which can suppress occurrence of damage, are provided. The light transmissive member includes a light transmissive base member having a first surface and a second surface positioned on a side opposite to the first surface, a light transmissive first film covering the first surface, a light transmissive second film covering the second surface, and a light transmissive third film provided over the second film. The first film contains hydrous alumina. The second film contains aluminum oxide having a crystallinity lower than that of α-alumina. Hardness of the third film is higher than hardness of the second film.
F21V 5/04 - Réfracteurs pour sources lumineuses de forme lenticulaire
F21Y 103/10 - Sources lumineuses de forme allongée, p. ex. tubes fluorescents comprenant un réseau linéaire d’éléments générateurs de lumière ponctuelle
A light-emitting device includes: a substrate; a plurality of light-emitting elements on or above the substrate, each of the light-emitting elements having an upper surface serving as a light-emitting surface and having a rectangular shape in a plan view from above the light-emitting device; and a plurality of light-transmissive members each having a rectangular shape in a plan view from above the light-emitting device and having a lower surface that faces the upper surface of each light-emitting element;
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
94.
POSITIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY
A positive electrode active material for a nonaqueous electrolyte secondary battery includes particles of a lithium-transition metal composite oxide that contains nickel in the composition thereof and has a layered structure. The particles have an average particle size DSEM based on electron microscopic observation in a range of 1 μm to 7 μm in which a ratio D50/DSEM of a 50% particle size D50 in volume-based cumulative particle size distribution to the average particle size based on electron microscopic observation is in a range of 1 to 4, and a ratio D90/D10 of a 90% particle size D90 to a 10% particle size D10 in volume-based cumulative particle size distribution is 4 or less.
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
A light-emitting device includes a wiring substrate, a reflecting member positioned at an upper side of the wiring substrate, a light source positioned at an upper side of the reflecting member, and a bonding member; the wiring substrate includes a first wiring part and a second wiring part at an upper surface of the wiring substrate; the reflecting member has a first through-hole including a first inclined surface spreading upward; the light source includes a first electrode and a second electrode; the bonding member includes a first conductive part and a resin part; the first conductive part is positioned in the first through-hole and electrically connects the first wiring part and the first electrode; and the resin part contacts the first inclined surface, the light source, and the first conductive part.
G02F 1/1335 - Association structurelle de cellules avec des dispositifs optiques, p. ex. des polariseurs ou des réflecteurs
H01L 25/075 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H10H 20/853 - Encapsulations caractérisées par leur forme
H10H 20/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
A light source unit includes: a display device configured to emit light that has a substantially Lambertian light distribution and to display an image including a plurality of pixels; a color change sheet on which light emitted from the display device is incident; an imaging optical system including an input element and an output element configured such that light emitted from the color change sheet is incident on the input element, light traveling via the input element is incident on the output element, and light emitted from the output element forms a first image corresponding to the image; and a drive unit configured to change a positional relationship of the display device and the color change sheet.
A manufacturing method of a mounting substrate includes: preparing a substrate including a mounting portion having a mounting surface, a first protruding portion having a first upper surface located above the mounting surface, and a second protruding portion having a second upper surface located above the mounting surface, the mounting surface being located between the first and second upper surfaces in a top view; disposing the substrate on a support member having a support surface such that the first and second upper surfaces face the support surface; and providing first and second through holes from a lower surface side toward an upper surface side of the substrate at first and second positions between which the mounting surface is interposed in the top view, the first and second positions not being located between the first upper surface and the mounting surface nor between the second upper surface and the mounting surface.
A ceramic substrate including a base having a first surface, a second surface opposite to the first surface, and a through hole having a first opening diameter at the first surface and a second opening diameter at the second surface. The first opening diameter is larger than the second opening diameter. The ceramic substrate also includes at least one solid particle disposed in the through hole, and an electrically-conductive member disposed in the through hole. A thermal conductivity of the at least one solid particle is higher than a thermal conductivity of the electrically-conductive member. The electrically-conductive member is continuous between the first surface and the second surface.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
99.
BONDED SUBSTRATE, LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING BONDED SUBSTRATE, AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE
A bonded substrate includes a metal plate; a first ceramic; and a first metal body disposed between a first surface of the metal plate and a first surface of the first ceramic and disposed on 80% or more of a lateral surface continuous with the first surface of the first ceramic.
H01L 33/64 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments d'extraction de la chaleur ou de refroidissement
100.
OPTICAL CIRCUIT, AND OPTICAL CIRCUIT DEVICE, SENSOR, AND MOVING BODY EMPLOYING SAME
An optical circuit capable of reducing a frequency variation of a light source caused by rotation is provided. The optical circuit includes a substrate, a laser light source formed on the substrate and including a first annular optical waveguide and a second annular optical waveguide that shares a part thereof with the first annular optical waveguide at one location, a first optical waveguide located on the substrate at a position separated from the laser light source and optically coupled to the laser light source, and a resonator optically coupled to the first optical waveguide.
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
brevets
