A microlithographic projection exposure mirror has an optical effective surface (11, 21, 31), a mirror substrate (12, 22, 32), a reflection layer system (17, 27, 37) reflecting electromagnetic radiation incident on the optical effective surface, and at least one piezoelectric layer (14, 24, 34) arranged between the substrate and the reflection layer system. An electric field for producing a locally variable deformation is applied by a first electrode arrangement (15, 25, 35) situated on the side of the piezoelectric layer facing the reflection layer system, and by a second electrode arrangement (13, 23, 33) situated on the side of the piezoelectric layer facing the mirror substrate. A layer (16, 26b, 36b) of amorphous material which is compaction-sensitive on exposure to low-energy electron beam radiation and which is arranged on the side of the piezoelectric layer facing the reflection layer system has a thickness of at least 20 μm.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
2.
METHOD AND DEVICE FOR FORMING A FLUORIDE OR OXYLFLUORIDE LAYER FOR AN OPTICAL ELEMENT FOR THE VUV WAVELENGTH RANGE, AND OPTICAL ELEMENT COMPRISING SAID FLUORIDE OR OXYLFLUORIDE LAYER
Methods of forming a fluoride or oxyfluoride layer for an optical element for use in the VUV wavelength range, which methods comprise: depositing an oxide layer; and converting the oxide layer into the fluoride or oxyfluoride layer by irradiating the oxide layer with UV/VUV radiation in the presence of an active fluorination agent. An optical arrangement has at least one such optical element. An associated device for forming a fluoride or oxyfluoride layer for an optical element is designed for use in the VUV wavelength range.
C23C 8/36 - Diffusion à l'état solide uniquement d'éléments non métalliques dans la couche superficielle de matériaux métalliquesTraitement chimique de surface par réaction entre le matériau métallique de la surface et un gaz réactif, laissant dans le revêtement des produits de la réaction, p. ex. revêtement de conversion, passivation des métaux au moyen de gaz au moyen de gaz ionisés, p. ex. nitruration ionique
G02B 1/14 - Revêtements protecteurs, p. ex. revêtements durs
3.
METHOD FOR OPERATING AN OPTICAL COMPONENT, AND OPTICAL COMPONENT
A method of operating an optical component having a mirror element, a substrate for carrying the mirror element, an actuator device for tilting the mirror element about one or two tilt axes, having a plurality of active actuator electrodes and one or more passive actuator electrodes, and a sensor device having a sensor electrode structure for detecting a tilt angle of the mirror element based on changes in capacitance, having a plurality of active sensor electrodes and a plurality of passive sensor electrodes, wherein the method comprises: generating a first voltage between a first portion of the active actuator electrodes and the passive actuator electrodes; and generating a second voltage between a second portion of the active actuator electrodes and the passive actuator electrodes. A respective potential different from a reference potential is applied to the one or more passive actuator electrodes by a voltage source with the reference potential.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
4.
COOLING DEVICE FOR COOLING A POSITION-SENSITIVE COMPONENT OF A LITHOGRAPHY SYSTEM
A cooling device (200) for cooling a position-sensitive component (102) of a lithography system (1), comprising a cooling line (206) with a liquid chamber (218) for conducting a cooling liquid (112) to the position-sensitive component (102) and a gas chamber (220) for receiving a gas (222), and an elastic separating membrane (224) which is arranged inside the cooling line (206) and separates the gas chamber (220) from the liquid chamber (218).
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
In a method for operating a microlithographic projection exposure apparatus, a mask is repeatedly exposed to an exposure radiation provided by an illumination system, and mask structures are imaged in the process on in each case one of a multiplicity of fields of a plurality of semiconductor substrates. During a period in which the repeated exposure of the mask takes place, the illumination system is used successively in at least two different illumination settings of the illumination system, in which different illumination distributions of the exposure radiation are present in a pupil plane of the illumination system, with a pupil surface illuminated in the first illumination setting having no overlap or an overlap of at most 90% of the respective illuminated pupil surface with a pupil surface illuminated in the second illumination setting, with the mask being fully exposed at least once in each of the different illumination settings.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
6.
OPTICAL ELEMENT FOR A PROJECTION EXPOSURE SYSTEM, OPTICAL SYSTEM COMPRISING SAME AND PROJECTION EXPOSURE SYSTEM COMPRISING THE OPTICAL ELEMENT AND/OR THE OPTICAL SYSTEM
An optical element for a projection exposure system. The optical element comprises a mirror body having a mirror section with an optically active surface and a base section provided on the rear side of the mirror section. The base section has a greater stiffness than the mirror section. The optical element also comprises multiple actuator connectors for connecting actuators to the optical element. The actuator connectors are provided on the base section. The optical element further comprises a stiffening rib structure attached on the rear side of the mirror section.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
7.
MIRROR DEVICE, FOR EXAMPLE FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE SYSTEM, AND METHOD FOR MEASURING THE TEMPERATURE OF A MIRROR
A mirror device, such as for a microlithographic projection exposure system, comprises a mirror, a sensor unit and a control unit. The mirror comprises a mirror body and a reflective surface provided on the mirror body. The sensor unit comprises a sensor element and a signal path extending to the control unit to transmit a measurement signal representing the temperature of the sensor element to the control unit. The sensor element is provided in the substrate of the mirror body. The sensor element comprises a plurality of electrical conductor paths integrated in the substrate of the mirror body. The conductor paths form a plurality of crossing points electrically conductively connecting the conductor paths to one another.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
8.
MIRROR DEVICE, PROJECTION OBJECTIVE AND METHOD FOR MEASURING THE TEMPERATURE OF A MIRROR
A mirror device, for example for a microlithographic projection exposure system, comprises a mirror, a sensor unit and a control unit. The mirror comprises a mirror body and a reflective surface provided on the mirror body. The sensor unit is designed to detect infrared radiation given off by the mirror body in order to derive a temperature measurement value therefrom and to send the temperature measurement value to the control unit. The mirror comprises a target with an increased emissivity for infrared radiation. The disclosure also relates to a method for measuring the temperature of a mirror.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01J 5/00 - Pyrométrie des radiations, p. ex. thermométrie infrarouge ou optique
9.
Facet Mirror, Illumination Optical Unit, Arrangement of a Facet Mirror, Projection Exposure Apparatus and Method for Producing a Nanostructured Component
A microlithographic projection exposure apparatus in which the second facet mirror of the illumination optical unit is in the region of the wafer plane, such as below the wafer plane.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 5/09 - Miroirs à facettes multiples ou polygonales
10.
COMPUTER IMPLEMENTED METHOD FOR DEFECT DETECTION IN AN IMAGING DATASET OF A WAFER, CORRESPONDING COMPUTER-READABLE MEDIUM, COMPUTER PROGRAM PRODUCT AND SYSTEMS MAKING USE OF SUCH METHODS
A computer implemented method for defect detection comprises obtaining an imaging dataset of a wafer, and verifying a defect criterion in a subset of the imaging dataset of the wafer. The defect criterion comprises an observation representation of the subset of the imaging dataset with respect to a number of characteristic elements derived from reference images of semiconductor structures. The observation representation and the characteristic elements define a reconstruction of minimal reconstruction error, and a tolerance statistic on defect-free representations of subsets of defect-free observed imaging datasets. Each of the defect-free representations and the characteristic elements define a reconstruction of minimal reconstruction error of a subset of the defect-free imaging datasets. The computer implemented method further comprises generating defect information.
An optical system for a metrology system serves to measure an object. An optical focusing component is arranged in the beam path of illumination light between a light source and an object field and serves to create an illumination focus. A detection device serves to capture the illumination light in the beam path downstream of the object field. The optical focusing component is embodied as a zone plate with at least two zones. Portions of the illumination light that are incident on the zones interact with each other by diffraction. Depending on the embodiment of the zone plate, the zones of the zone plate are arranged in such a way that the zone plate is chromatically corrected for the illumination light, the zone plate is aspherically corrected for the illumination light, the zones of the zone plate have a reflective embodiment for the illumination light, and/or the zones of the zone plate are arranged in such a way that at least one order of diffraction of the illumination light is preferred as predetermined order of diffraction in comparison with at least one further order of diffraction as regards the used illumination light intensity guided by the zone plate. This results in an optical system in which the zone plate design options for the optical focusing component are optimized in order to improve application options for the metrology system.
The techniques disclosed herein relate to an arrangement, a method and a computer program product for system-integrated calibration of the facet mirrors of a microlithographic illumination system. Calibration beam paths leading via the facet mirrors between a calibration radiation source and a calibration radiation sensor are defined, only one pivotable micromirror of the single facet mirror constructed from micromirrors being involved in each of said calibration beam paths. By pivoting the micromirror involved in a defined calibration beam path, a specific optimum pivot position, whose underlying orientation of the micromirror can also be calculated geometrically, can be found on the basis of the calibration radiation sensor. By comparing the calculated orientation with the orientation determined by an orientation sensor at the micromirror, the orientation sensor of the micromirror of the facet mirror can be calibrated.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
13.
HOLDING DEVICE FOR AN OPTICAL COMPONENT HAVING AN OPTICAL SURFACE WITH A POLYGONAL BORDER AND HAVING A CYLINDRICAL SUBSTRATE BODY
A holding device holds an optical component having an optical surface with a polygonal border and having a cylindrical substrate body with a cylinder lateral wall with a polygonal cross section corresponding to the border of the optical surface. The holding device has a holding frame. At least two bearing bodies of the holding device make bearing contact with the lateral wall of the substrate body by way of bearing portions of the lateral wall. At least one pressing body of the holding device exerts a bearing pressure that presses the substrate body against the bearing body. The holding device can securely hold optical components having an optical surface with a polygonal border and having a cylindrical substrate body and moreover enables positionally accurate mounting.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 7/00 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques
14.
COMPUTER IMPLEMENTED METHOD FOR DEFECT RECOGNITION IN AN IMAGING DATASET OF A WAFER, CORRESPONDING COMPUTER READABLE-MEDIUM, COMPUTER PROGRAM PRODUCT AND SYSTEMS MAKING USE OF SUCH METHODS
A computer implemented method for defect recognition in an imaging dataset of a wafer in a charged particle beam system comprising an embedded system, the method comprising: i) obtaining an imaging dataset of a wafer; ii) obtaining model data for a model architecture of a machine learning model for defect recognition in the imaging dataset of the wafer, the model architecture being implemented in the embedded system; iii) transferring the model data to a programmable memory of the embedded system; and iv) applying the machine learning model to an imaging dataset of a wafer to recognize defects, comprising executing the embedded system implemented model architecture with the transferred model data.
A magnifying imaging optical unit is part of a metrology system for examining objects. The magnifying imaging optical unit has at most four mirrors which image an object field in an object plane into an image field in an image plane. According to one aspect, an entrance pupil of the magnifying imaging optical unit has a boundary shape which deviates from an ellipse and the aspect ratio of which is not equal to 1. In accordance with a further aspect, reflection surfaces of small-area mirrors which are used for guiding imaging light along an imaging beam path deviate from a spherical shape by at most 10 μm. This results in a magnifying imaging optical unit in which an imaging result which satisfies the stringent requirements of a metrology system results for a given manufacturing outlay.
A method for checking a lithography mask for a repair of the lithography mask, the lithography mask having a plurality of edges between partial regions of the lithography mask and the object of the repair lying in an adjustment of a profile of a selected edge in a repair portion of the selected edge, comprises:
a) capturing an image representation of a repair region of the lithography mask comprising the repair portion of the selected edge,
b) determining the profile of the selected edge in the repair portion on the basis of the captured image representation of the repair region,
b1) determining a reference profile on the basis of a profile of an edge corresponding to the selected edge, the corresponding edge being an edge which should not be repaired or a portion of the selected edge which should not be repaired, the corresponding edge being determined on the basis of the captured image representation of the repair region, and
c) comparing the determined profile of the selected edge with a reference profile.
G03F 1/72 - Réparation ou correction des défauts dans un masque
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
17.
BIPOD, OPTICAL SYSTEM AND PROJECTION EXPOSURE APPARATUS
A bipod for adjusting an optical element of an optical system for a projection exposure apparatus, having a mechanism which is couplable to the optical element to adjust the optical element, a base portion, a first tower portion extending out of the base portion, and a second tower portion different from the first tower portion and extending out of the base portion. The mechanism is between the first and second tower portions. The first and second tower portions are connected to each other facing away from the base portion to increase the stiffness of the bipod.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
18.
APPARATUS FOR STRESS-REDUCED MOUNTING OF MEMS-BASED MICROMIRRORS
An apparatus for stress-reduced mounting of MEMS-based micromirrors on a metallic support structure comprises a plate extending in a main plane of extent and a plurality of compensation elements which are connected to the plate and have connecting elements which extend across the main plane of extent and a plurality of base elements. A respective group with a plurality of connecting elements is connected to a common base element. The apparatus is produced using MEMS technology.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An assembly of an optical system, comprising at least one mirror with a mirror main body, in which there is a fluid channel arrangement with at least one fluid channel through which a fluid can flow. The fluid channel arrangement is coupled to a fluid line system via a detachable flange connection. The flange connection comprises a flange interface formed on the mirror main body and a flange force-lockingly mounted on the flange interface. A seal is formed between the flange and the flange interface in order to provide a differential vacuum.
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
G02B 17/00 - Systèmes avec surfaces réfléchissantes, avec ou sans éléments de réfraction
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
20.
METHOD FOR OPERATING AN OPTICAL COMPONENT, AND OPTICAL COMPONENT
A method of operating an optical component having a mirror element, a substrate for carrying the mirror element, an actuator device for tilting the mirror element about one or two tilt axes, and a sensor device having a sensor electrode structure for detecting a tilt angle of the mirror element based on changes in capacitance. The sensor electrode structure in this case comprises a plurality of active sensor electrodes and a plurality of passive sensor electrodes. According to the disclosure, the passive sensor electrodes are subjected to different voltages during operation of the optical component.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
21.
METHOD TO ADJUST AN ILLUMINATION BEAM PATH WITHIN AN ILLUMINATION OPTICS AND ILLUMINATION OPTICS HAVING AN ADJUSTMENT SYSTEM
A method adjusts an illumination beam path within an illumination optics having a first facet mirror with a plurality of mirror facets being tiltable via respective actuators and further having a second facet mirror with a plurality of micro mirrors, each being equipped with a thermal load sensor. The micro mirrors are groupable in micro mirror groups, each of these being attributed to one of the plurality of mirror facets.
G02B 26/12 - Systèmes de balayage utilisant des miroirs à facettes multiples
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
22.
INDIVIDUAL MIRROR OF A PUPIL FACET MIRROR AND PUPIL FACET MIRROR FOR AN ILLUMINATION OPTICAL UNIT OF A PROJECTION EXPOSURE APPARATUS
An individual mirror of a pupil facet mirror of an illumination optical unit of a projection exposure apparatus is mounted so as to be pivotable about two pivot axes. A ratio of the pivotability of the individual mirror about the two pivot axes is at least 2:1.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G02B 26/12 - Systèmes de balayage utilisant des miroirs à facettes multiples
23.
ILLUMINATION SYSTEM, RADIATION SOURCE APPARATUS, METHOD FOR ILLUMINATING A RETICLE, AND LITHOGRAPHY SYSTEM
An illumination system for a lithography system, such as a projection exposure apparatus, for illuminating a reticle of the lithography system with a used radiation from a radiation source apparatus, comprises an optics device having at least one optical element and at least one mixing device. An interface device is provided for input coupling a plurality of individual radiations, which form the used radiation, into the mixing device. A source étendue of the radiation source apparatus fills at least 50 percent, such as at least 80 percent, of an optics étendue of the optics device and/or mixing device.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Microelectromechanical device with a carrier substrate having a substrate surface (100a), and plural MEMS modules (120. Each module includes an ASIC layer (140) having a front side (140a) and a rear side (140b). A baseplate (160) has a front side (160a) and a rear side (160b), a plurality of microelectromechanical components (130) have rear sides (130b). The baseplate rear side is cohesively connected to the ASIC layer front side with electrical contacts (144). The components are arranged on the baseplate front side with their component rear sides. The contacts are partly encompassed by a frame (195) arranged between baseplate and ASIC layer. The ASIC layer has an ASIC controlling the components. The ASIC is electrically connected to the components using a portion of the contacts. The modules are arranged on the substrate surface and the ASIC layer rear sides of the modules are connected to the substrate surface.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
B81C 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
25.
INTERMEDIATE PRODUCT FOR PRODUCING AN OPTICAL ELEMENT FOR A PROJECTION EXPOSURE APPARATUS, OPTICAL ELEMENT FOR A PROJECTION EXPOSURE APPARATUS, METHOD FOR PRODUCING AN INTERMEDIATE PRODUCT, AND METHOD FOR PRODUCING AN OPTICAL ELEMENT
An intermediate product for producing an optical element for a projection exposure apparatus (1) has a substrate (20) for specifying a basic topography of an optical surface, wherein a plurality of etchable layers including a layer (22i) to be structured and a contrast layer (23i) are applied to the substrate (20), wherein the layer (22i) to be structured and the contrast layer (23i) have different chemical properties such that a removal of the contrast layer (23i) can be detected in situ.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
26.
COMPUTER IMPLEMENTED METHOD FOR GENERATING AN AERIAL IMAGE OF A PHOTOLITHOGRAPHY MASK USING A MACHINE LEARNING MODEL
The invention relates to a computer implemented method for generating an aerial image of a photolithography mask in an image space, the method comprising: obtaining a representation of a design of the photolithography mask; applying a trained conditional diffusion model that is configured to sequentially revert a stochastic process to an initial sample in order to generate an aerial image of the photolithography mask, wherein the trained conditional diffusion model is conditioned on the representation of the design of the photolithography mask. The invention also relates to computer implemented methods for defect localization, alignment, repair shape generation, training data generation and corresponding systems.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
28.
METHOD OF CHARACTERIZING A FAULT IN A SCANNING ELECTRON MICROSCOPE
A method of characterizing a fault in a scanning electron microscope, wherein the scanning electron microscope is suitable for analysing and/or processing a sample, especially a lithography mask, with the aid of an electron beam, wherein the method has the following steps:
a) putting the scanning electron microscope in an equilibrium state,
b) introducing a trigger event into the scanning electron microscope that disrupts the equilibrium state,
c) detecting a response behaviour of the scanning electron microscope (100) to the trigger event, and
d) comparing the response behaviour detected with an expected response behaviour for characterization of the fault.
A drive device for driving at least one actuator for actuating an optical element of an optical system, wherein the drive device comprises an end stage configured to boost an input voltage using a quiescent current of the end stage to a drive voltage for the actuator. The drive device also comprises a supply device configured to adjust the quiescent current for the end stage depending on a specific dynamics request for the end stage.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
30.
METHODS, SYSTEMS, COMPUTER PROGRAMS AND COMPUTER-READABLE MEDIA FOR AUTOMATICALLY DESIGNING A WORKFLOW TO PERFORM A SEMICONDUCTOR INSPECTION TASK
A computer implemented method for automatically designing a workflow for semiconductor inspection comprises: receiving input data to be processed by the workflow; receiving a natural language text describing at least a desired output of the workflow; using the natural language text as input to a trained workflow proposal machine learning model that generates one or more workflow proposals, each comprising a sequence of action items to generate the desired output when applied to the input data; prompting a user to confirm a workflow proposal; and applying the confirmed workflow proposal to the input data to perform a semiconductor inspection task. Corresponding computer programs, computer-readable media and systems are provided.
A test system for a camera, comprising a camera and a first capture plate. The camera comprises a camera housing and a vacuum flange formed on the camera housing. The vacuum flange is adapted for attaching the camera to a vacuum chamber. The camera housing supports an image sensor. The image sensor comprises an image sensor surface layer. The first capture plate comprises a first capture plate surface layer. The first capture plate surface layer corresponds to the image sensor surface layer. The invention also relates to a mask inspection system and to a method for testing a camera, in particular, an EUV camera.
H04N 17/00 - Diagnostic, test ou mesure, ou leurs détails, pour les systèmes de télévision
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
32.
RESIDUAL GAS ANALYSER, PROJECTION EXPOSURE APPARATUS COMPRISING A RESIDUAL GAS ANALYSER AND METHOD OF RESIDUAL GAS ANALYSIS
The disclosed techniques relate to a residual gas analyzer, in particular for analyzing a residual gas in an EUB projection exposure apparatus, including a mass spectrometer and an admission device for admitting ionized constituents of the residual gas from a vacuum environment into the mass spectrometer. The admission device includes an ion decelerator, with the ion decelerator having an adjustable deceleration voltage in order to subject the ionized constituents to selection with respect to kinetic energy before being transferred into the mass spectrometer. The disclosed techniques also relate to a projection exposure apparatus including such a residual gas analyzer, and a method for residual gas analysis.
H01J 49/44 - Spectromètres à énergie, p. ex. spectromètres alpha, spectromètres bêta
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01J 49/00 - Spectromètres pour particules ou tubes séparateurs de particules
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p. ex. fermetures étanches au videDispositions pour le réglage externe des composants électronoptiques ou ionoptiques
The present application relates to a method and a device for correcting at least one image error when scanning a charged particle beam of a scanning particle microscope over a sample, the method comprising the steps of: (a) dividing a scanned region of the charged particle beam into at least two partial regions, with each of the at least two partial regions containing at least one structure element; (b) determining a correction value for the at least one structure element with regards to a target position of the at least one structure element for each of the at least two partial regions; and (c) correcting a beam deflection of the charged particle beam for at least one of the at least two partial regions using the determined correction value.
This disclosure is directed to a residual gas analyser, in particularly, a residual gas analyser for analysing a residual gas in a microlithography projection exposure apparatus. The residual gas analyser includes a mass spectrometer and an admission device for admitting constituents of the residual gas from a vacuum environment into the mass spectrometer. The admission device includes a switchable ion source. The ion source in a first switching state allows ionized constituents of the residual gas to pass through. The ion source in a second switching state ionizes neutral constituents of the residual gas. The disclosed techniques also relate to a projection exposure apparatus including such a residual gas analyser and to a method of residual gas analysis.
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p. ex. fermetures étanches au videDispositions pour le réglage externe des composants électronoptiques ou ionoptiques
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01J 49/06 - Dispositifs électronoptiques ou ionoptiques
H01J 49/16 - Sources d'ionsCanons à ions utilisant une ionisation de surface, p. ex. émission thermo-ionique ou photo-électrique
LENS ELEMENT FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS DESIGNED FOR OPERATION IN THE DUV, AND METHOD AND ARRANGEMENT FOR FORMING AN ANTIREFLECTION LAYER
The techniques disclosed herein relate to a lens element for a microlithographic projection exposure apparatus designed for operation in the DUV, and a method and an arrangement for forming an antireflection layer. In accordance with one aspect, in the case of a lens element according to the disclosed techniques, an antireflection layer is formed on a lens substrate, the antireflection layer comprising a first material of relatively lower refractive index and a second material of relatively higher refractive index, and a mixture ratio between the first material and the second material carrying in a lateral direction and/or in a vertical direction.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
36.
METHOD FOR DISTORTION MEASUREMENT AND PARAMETER SETTING FOR CHARGED PARTICLE BEAM IMAGING DEVICES AND CORRESPONDING DEVICES
A method for determining a measure of an image distortion of a charged particle beam imaging device comprises providing a plurality of images of a region of a sample using the charged ion beam device, and determining the measure of the image distortion based on displacements of corresponding objects between the plurality of images. A method of setting one or more parameters of a charged particle beam imaging device based on a measure of the image distortion as well as corresponding devices and systems is provided.
An apparatus provides sensor data from at least one sensor of an optical system of a lithography apparatus. The apparatus comprises an analogue-to-digital converter and a digital filter device connected downstream of the analogue-to-digital converter. The analogue-to-digital converter is configured to convert an analogue signal sequence, which is provided via a number N of channels and includes a number N of analogue sensor signals from the number N of sensors of the optical system, into a digital signal sequence including N digital sensor signals. The analogue-to-digital converter and the digital filter device have the same frequency-synchronized system clock. The digital filter device is configured to filter the N digital sensor signals of the digital signal sequence in a channel-specific manner for providing and storing a respective filtered digital sensor signal for each of the N channels.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
COMPUTER IMPLEMENTED METHOD FOR DEFECT DETECTION IN AN IMAGING DATASET OF AN OBJECT COMPRISING INTEGRATED CIRCUIT PATTERNS USING MACHINE LEARNING MODELS WITH ATTENTION MECHANISM
The invention relates to a computer implemented method for defect detection comprising: obtaining an imaging dataset and a reference dataset of an object comprising integrated circuit patterns; and detecting defects in the imaging dataset using the imaging dataset and the reference dataset, wherein a machine learning model for defect highlighting is applied to the imaging dataset as input and generates a highlighted defect dataset as output, and wherein the machine learning model for defect highlighting comprises at least one attention mechanism. The invention also relates to computer programs, computer-readable media and corresponding systems.
Disclosed is an optical inspection device for elements pertaining to semiconductor lithography, comprising an imaging device for generating an image of an element, said imaging device being arranged in a first partial volume, and a second partial volume comprising a holding device for receiving the element. A separating element is arranged between the two partial volumes. Included is a position measuring device comprising reference marks for emission of electromagnetic radiation used in the position measuring device and the reference marks are respectively connected to the imaging device and the holding device. The separating element comprises a partition wall having an opening. The opening serves for image recording by the imaging device and the electromagnetic radiation which emanates from the reference mark mounted on the imaging device and proceeds in the position measuring device passes through the opening.
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A device for setting an optical transmission comprises a first side, a second side and an optical component between the first and second sides. The optical component comprises a first optical element and an adjustment mechanism for moving at least the first optical element. The adjustment mechanism is designed to modify the transmission of the optical component by moving at least the first optical element between the first and second sides such that a light intensity on the second side can be set by the movement of the at least first optical element. The adjustment mechanism is designed to move at least the first optical element such that the optical transmission can be adapted with a switching time of less than 1 s, such as less than 1 ms, for example less than 1 μs. A system comprises such a device and light source that emits light in a beam path.
H01S 3/106 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation par commande de dispositifs placés dans la cavité
H01S 3/00 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
41.
X-RAY INSPECTION SYSTEM FOR INSPECTION OF AN OBJECT
An X-ray inspection system serves for inspection of an object. An X-ray source of the system generates X-rays to propagate through a region of interest of the object. An object mount holds the object to be inspected such that the ROI is accessible for the generated X-rays. A detection system detects the X-rays after propagation through the ROI. The X-ray source generates a plurality of separate X-ray light bundles to propagate through the ROI. Chief rays of at least two of the generated separate X-ray light bundles impinge on the ROI of the object with different chief ray illumination angles. The detection system comprises separate detection areas to detect the separate X-ray light bundles, respectively. Such an inspection system can exhibit relatively fast image data acquisition.
G01N 23/044 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux en utilisant la laminographie ou la tomosynthèse
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
42.
METHOD FOR EXAMINING A BLANK OF A MICROLITHOGRAPHIC PHOTOMASK
A method for examining a blank of a microlithographic photomask, including the steps of:
a) arranging the blank on a first stage of a first examination apparatus such that a first and a second edge of the blank rest against stops of the first stage,
b) ascertaining an examination location on the blank in a first coordinate system with the aid of the first examination apparatus,
c) arranging the blank on a second stage of a second examination apparatus having an image recording unit,
d) recording at least one image of the blank using the image recording unit such that the first and second edge are captured at least in part, and
e) ascertaining a transformation rule on the basis of the first and second edge captured in the at least one image, in order to transform the examination location captured in the first coordinate system into a second coordinate system (142) of the second examination apparatus.
A projection exposure apparatus has a heating device for heating at least one element of the projection exposure apparatus via electromagnetic radiation. The heating device comprises an illumination optical unit having a housing and at least one optical element, arranged within the housing, for influencing the electromagnetic radiation. The at least one optical element is fixed within the housing by way of at least one elastic element.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A facet mirror assembly has a carrier body for a plurality of individual mirrors. Reflection surfaces of the individual mirrors are individually tiltable, via assigned tilt actuators, about at least one tilt axis within an individual mirror tilt angle range around a neutral tilt position between a maximum angle and a minimum angle. The individual mirrors have at least two different neutral tilt positions in a range around a mean value of a total tilt angle range. The result can be a facet mirror assembly having improved properties with respect to a tilt actuator system of the facet mirror assembly.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 5/09 - Miroirs à facettes multiples ou polygonales
45.
METHOD FOR PROCESSING A DEFECT OF A MICROLITHOGRAPHIC PHOTOMASK
A method for processing a defect of a microlithographic photomask is disclosed, wherein a process gas is activated with the aid of a particle beam, wherein a control unit is provided for controlling a deflection unit with a control bandwidth, wherein the deflection unit for deflecting the particle beam is configured to guide the particle beam over the photomask, including the following steps:
a) providing an image of at least a portion of the photomask,
b) ascertaining a repair shape (in the image on the basis of the control bandwidth, wherein the repair shape comprises the defect, and
c) providing the particle beam at m pixels of the repair shape with the aid of the deflection unit, and activating the process gas for the purpose of processing the defect.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé
G03F 1/86 - Inspection au moyen d'un faisceau de particules chargées [CPB charged particle beam]
46.
MEASURING ASSEMBLY FOR DETECTING A DISTANCE BETWEEN TWO ELEMENTS, DISTANCE MEASURING DEVICE, OPTICAL MEASURING SYSTEM AND METHOD
A measuring assembly for determining at least one distance between a first and a second optical element (2, 3). The first element is translucent as a measuring matrix and has a semi-reflective first surface (7). The second optical element is an EUV mirror and has an at least semi-reflective second surface (8). The first surface lies opposite the second surface at the distance to be detected. A light beam (14) generated by a light beam source (13) is coupled into the first optical element by a surface (11) that is different from the first surface. A first partial light beam (19) is reflected by the first surface and a second partial light beam (16) passing through the first surface is reflected by the second surface and each back into the first optical element. A light beam sensor (21) is arranged to detect both partial light beams, to determine the distance.
An optical assembly has an optical element which comprises a main body. At least one actuator serves to deform the main body and is arranged on the back side of the main body. The at least one actuator is connected at a first connecting surface to the back side of the main body. The at least one actuator is connected at a second connecting surface to a back plate. The back plate is mounted exclusively by way of the actuator.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
48.
METHOD FOR PRODUCING A MAIN BODY OF AN OPTICAL ELEMENT FOR SEMICONDUCTOR LITHOGRAPHY, MAIN BODY, OPTICAL ELEMENT AND PROJECTION EXPOSURE APPARATUS
The disclosed techniques relate to a method for producing a base element of an optical element for semiconductor lithography, comprising the following steps: firstly, producing a material mixture comprising at least two material components; secondly, producing an intermediate element from the material mixture, wherein the material mixture comprises at least one first material component made of the material of the later base element, and wherein the material mixture comprises a second material component that functions to mechanically stabilise the intermediate element; thirdly, producing the base element from the intermediate element via temporary heating and at least partial removal of the second material component. The disclosed techniques also relate to an optical element produced using the method according to the disclosed techniques, a base element, an optical element, and a projection exposure system for semiconductor lithography provided with the optical element
B29C 64/153 - Procédés de fabrication additive n’utilisant que des matériaux solides utilisant des couches de poudre avec jonction sélective, p. ex. par frittage ou fusion laser sélectif
B33Y 70/00 - Matériaux spécialement adaptés à la fabrication additive
B33Y 80/00 - Produits obtenus par fabrication additive
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A mirror for a projection exposure apparatus has a spectral filter, embodied as a grating structure, for light reflected by the mirror. The grating structure has at least two grating levels and hence specifies at least two optical path lengths for the reflected light. An overall flank portion of the grating structure is arranged in each case between grating level structure portions of the grating structure, which each specify adjacent grating levels. A lower limit spatial wavelength over a defect-free partial flank portion of the overall flank portion making up at least an extent of 90% of the overall flank portion is in the range from 0.01 μm to 1 μm exclusive.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
50.
IMAGING EUV OPTICAL UNIT FOR IMAGING AN OBJECT FIELD INTO AN IMAGE FIELD
An imaging EUV optical unit serves for imaging an object field into an image field. The EUV optical unit has a plurality of mirrors for guiding EUV imaging light at a wavelength of less than 30 nanometers along an imaging beam path from the object field towards the image field. The EUV optical unit has four normal incidence (NI) mirrors. The overall transmission of the NI mirrors is greater than 10%. The mirrors lead to an overall polarization rotation of no more than 10° along the imaging beam path when linearly polarized EUV imaging light is used. This can yield an imaging EUV optical unit with an increased EUV throughput while observing exacting demands on the imaging quality.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 17/06 - Systèmes catoptriques, p. ex. systèmes redressant et renversant une image utilisant uniquement des miroirs
51.
OPTICAL ELEMENT AND PROJECTION EXPOSURE APPARATUS FOR SEMICONDUCTOR LITHOGRAPHY
An optical element for a projection exposure apparatus for semiconductor lithography comprises a main body and at least two actuators connected to the main body. The actuators are designed for deforming an optical effective surface of the optical element. The at least two actuators are ring actuators. A corresponding apparatus comprises such an optical element.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
52.
METHOD FOR HEATING AN OPTICAL ELEMENT, AND OPTICAL SYSTEM
A method for heating an optical element in an optical system, such as a microlithographic projection exposure system, comprises introducing a heating power into the optical element using a thermal manipulator. The heating power is adjusted to a set of desired values. The set of desired values is adjusted to produce a thermally induced deformation depending on a first optical aberration to be compensated. Adjusting the set of desired values also includes taking into account the effect of introducing the heating power on a second optical aberration which is caused by useful light impinging on the optical element during operation of the optical system. The thermally induced deformation profile can be co-optimized.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An EUV collector for an EUV projection exposure apparatus transfers usable EUV light emerging from a source volume into a collection volume separated from the source volume. The source volume has a first source extension along a connection axis between a center of the source volume and a center of the collection volume. The source volume has a second, cross section source extension along a cross section axis perpendicular to the connection axis. The EUV collector images the source volume into the collection volume. The imaging has a first imaging scale along the connection axis and a second imaging scale along the cross section axis. The first imaging scale differs from the second imaging scale by at least 10%.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
54.
METHOD FOR OPERATING A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS, MICROLITHOGRAPHIC MASK AND PROJECTION EXPOSURE APPARATUS
A method of operating a microlithographic projection exposure apparatus at least partially compensates an image offset. The method includes illuminating different field regions of the object plane with differing illumination settings, and producing a field-dependent image offset during imaging of the object plane onto the image plane. The field-dependent illumination and the field-dependent image offset can reduce the loss of imaging contrast as a whole. The field-dependent illumination can be implemented by a MEMS facet mirror in the illumination device, and the field-dependent image offset can be implemented by a horizontal and/or vertical mask distortion in combination with an adapted feed modification.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
55.
IMAGING EUV OPTICAL UNIT FOR IMAGING AN OBJECT FIELD INTO AN IMAGE FIELD
An imaging EUV optical unit serves for imaging an object field into an image field. The optical unit has a plurality of mirrors for guiding EUV imaging light at a wavelength shorter than 30 nm along an imaging beam path from the object field to the image field. The plurality of the mirrors includes at least two normal incidence mirrors and at least two grazing incidence mirrors. An overall transmission of the plurality of the mirrors is greater than 10%. This yields an imaging EUV optical unit whose usability for an EUV projection exposure apparatus can be improved.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
56.
METHOD FOR COMPENSATING ACTUATOR EFFECTS OF ACTUATORS
A method for driving an actuator for a component of a projection exposure apparatus for semiconductor lithography comprises: characterizing the actuator; parameterizing an actuator model; implementing the actuator model in a control structure; and driving the in actuator using the actuator model.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
57.
METHOD FOR OPERATING A CONTROL DEVICE, CONTROL DEVICE, OPTICAL SYSTEM AND LITHOGRAPHY APPARATUS
A method of operating a control device for controlling and measuring a plurality N of actuators for actuating at least one optical element of an optical system comprises measuring an individual actuator of the N actuators during a specific measurement time interval. The measurement is carried by exciting the individual actuator via an excitation voltage provided by a control unit. A measurement current indicative of a time-dependent current of the actuator excited via the excitation voltage is provided by a current measuring unit. A measurement voltage indicative of a time-dependent voltage of the actuator excited via the excitation voltage is provided by a voltage measuring unit. An impedance measurement result is ascertained based on the provided measurement current and the provided measurement voltage. A deviation indicative of a fault in the control device is determined based on the ascertained impedance measurement result.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 31/52 - Test pour déceler la présence de courts-circuits, de fuites de courant ou de défauts à la terre
A method for heating an optical element in an optical system, such as in a microlithographic projection exposure system comprises using a thermal manipulator to introduce a heating power into the optical element to produce a thermally induced deformation. Before starting operation of the optical system in which useful light impinges on the optical element, the heating power is adjusted with respect to a desired state of the optical element in which a first optical aberration is at least partially compensated. After starting operation of the optical system, the heating power is regulated to the desired state depending on the heat load of the useful light impinging on the optical element. The heating power is regulated in such a way that the average temperature of the optical element remains constant up to a maximum deviation of 0.5 K.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
A method for operating an ion beam device comprises determining an incidence angle at which an ion beam of the ion beam device hits an upper top surface of a semiconductor sample and a rotation angle for the semiconductor sample around a rotation axis extending perpendicular to the upper top surface. The method also includes rotating the semiconductor sample around the rotation axis by the rotation angle. The method further includes determining a scan angle between an adapted scan line along which the ion beam is moved when hitting the upper top surface and a default scan line of the ion beam extending parallel to the upper top surface of the semiconductor sample. Determining the scan angle is based on the rotation angle and the incidence angle. The scan line is adapted to the adapted scan line based on the determined scan angle.
An illumination optical unit is part of a mask inspection system for use with EUV illumination light. A hollow waveguide serves to guide the illumination light. For the illumination light, the hollow waveguide has an entrance opening in an entrance plane and an exit opening in an exit plane. An input coupling mirror optical unit is disposed upstream of the hollow waveguide in the beam path of the illumination light and has at least one mirror for imaging a source region of an EUV light source into the entrance opening of the hollow waveguide. An output coupling mirror optical unit serves to image the exit opening of the hollow waveguide into an illumination field. This yields an illumination optical unit whose use efficiency for the EUV illumination light has been optimized.
A reflective optical element (11), in particular for reflecting EUV radiation (14) includes: a substrate having an optical surface on which a reflective coating (13) is applied. The substrate has a quasi-monocrystalline volume region (8). An associated method for producing the substrate (10) for the optical element (11) includes: introducing a starting material, preferably a metal or a semimetal, into a container and melting the starting material, producing a material body having a quasi-monocrystalline volume region (8) by directionally solidifying the molten starting material proceeding from a plurality of monocrystalline seed plates arranged in the region of a base of the container, and producing the substrate by processing the material body to form an optical surface (12).
C30B 11/14 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger caractérisée par le germe, p. ex. par son orientation cristallographique
A method of operating a projection exposure apparatus for microlithography, comprises: heating an optical element of the projection exposure apparatus by irradiating a surface of the optical element with heating radiation during a break in operation in which the surface of the optical element is not irradiated by exposure radiation. An inhomogeneous temperature distribution which reduces aberrations of the projection exposure apparatus is created on a portion of the surface of the optical element during the heating in the break in operation, with the inhomogeneous temperature distribution being created by irradiating the portion with heating radiation with at least one continuous heating radiation profile formed by a beam shaping element. A related projection exposure apparatus for microlithography is disclosed.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
63.
COMPUTER IMPLEMENTED METHOD FOR SIMULATING AN AERIAL IMAGE OF A MODEL OF A PHOTOLITHOGRAPHY MASK USING A MACHINE LEARNING MODEL
The invention relates to a computer implemented method for simulating an aerial image of a model of a photolithography mask illuminated by incident electromagnetic waves, the method comprising: obtaining the model of the photolithography mask; simulating the propagation of the incident electromagnetic waves through the model of the photolithography mask using a machine learning model, wherein the machine learning model maps the model of the photolithography mask to a representation of an electromagnetic field generated by the incident electromagnetic waves on the photolithography mask; obtaining the aerial image of the model of the photolithography mask by applying a simulation of an imaging process. The invention also relates to corresponding computer programs, computer-readable media and systems.
The invention relates to a computer implemented method for simulating an aerial image of a model of a photolithography mask illuminated by incident electromagnetic waves, the method comprising: obtaining the model of the photolithography mask, the model describing the photolithography mask at least partially in a dimension orthogonal to the mask carrier plane; simulating the propagation of the incident electromagnetic waves through the model of the photolithography mask using a machine learning model, wherein the machine learning model maps the model of the photolithography mask to a representation of an electromagnetic field generated by the incident electromagnetic waves on the photolithography mask; obtaining the aerial image of the model of the photolithography mask by applying a simulation of an imaging process. The invention also relates to corresponding computer programs, computer-readable media and systems.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
65.
HANDLING SYSTEM FOR MICROLITHOGRAPHIC PHOTOMASKS, INSPECTION SYSTEM AND PROCESSING SYSTEM HAVING A HANDLING SYSTEM
The invention relates to a handling system for microlithographic photomasks, having an articulated arm robot and having an alignment device. The alignment device is designed to rotate a photomask held by the alignment device about a vertical axis during a first movement process and flip said photomask about a horizontal axis during a second movement process. The invention also relates to an inspection system having a handling system and to a processing system having a handling system.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An ion beam system capable of providing increased secondary electron yield is provided. The increase of a secondary electron yield can be achieved by utilizing, during ion beam scanning, a combination of at least two individual gases adapted to material compositions present in a semiconductor wafer or lithography mask. The system and method can be used, for example, for inspection, circuit edit or repair of semiconductor wafers or lithography masks.
An optical system for a lithography apparatus has an arrangement comprising a printed circuit board having at least one flexible region in which a flexible component comprising an integrated circuit is arranged.
An illumination system for a microlithography projection illumination facility for illuminating a sample arranged in a region of an object plane of a downstream projection lens with illumination light generated from light from a primary light source is a double-field illumination system for receiving a single light beam coming from the primary light source and generating therefrom two illumination beams. A first illumination beam is guided along a first illumination beam path to a first illumination field outside the optical axis of the projection lens in the exit plane of the illumination system. At the same time, a second illumination beam is guided along a second illumination beam path to a second illumination field opposite the first illumination field relative to the optical axis and outside the optical axis in the exit plane.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
69.
MIRROR, IN PARTICULAR FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE SYSTEM
A mirror, in particular for a microlithographic projection exposure system, having an active optical surface, a reflective layer system for reflecting electromagnetic radiation of a working wavelength which is incident on the active optical surface, a mirror substrate (105, 205, 305) which is made of a mirror substrate material and in which structures (106, 206, 306) are arranged that differ from the surrounding mirror substrate material in terms of the refractive index, and a layer stack which is located between the mirror substrate (105, 205, 305) and the reflective layer system. The layer stack has an absorber layer (110, 210, 310) an AR layer (120, 220, 320) and a smoothing layer (130, 230, 330) one after the other in a stacking direction running from the mirror substrate (105, 205, 305) to the reflective layer system.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
70.
CATADIOPTRIC PROJECTION OBJECTIVE, PROJECTION ILLUMINATION SYSTEM AND PROJECTION ILLUMINATION METHOD
A catadioptric projection objective for reproducing a pattern arranged in an object plane of the projection objective in an image plane of the projection objective parallel to the object plane comprises a plurality of optical elements comprises lenses and concave mirrors arranged between the object plane and the image plane along an optical axis. The projection objective is a double-field projection objective to reproduce a first effective object field outside the optical axis in the object plane along a first projection beam path in a first effective image field outside the optical axis in the image plane and at the same time to reproduce a second effective object field, opposite the first object field in relation 10 to the first optical axis, outside the optical axis in the object plane along a second projection beam path in a second effective image field outside the optical axis in the image plane.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An optical element for incorporation into a holding device for forming an assembly for constructing an optical system comprises a body transparent to light from a used wavelength range, on which a first light passage surface and an opposing second light passage surface are formed. Each light passage surface has an optical used region for arrangement in a used beam path of the optical system and an edge region outside the optical used region and designated as an engagement region for holding elements of the holding device. Each light passage surface is of optical quality in the optical used region and has a surface shape designed in accordance with a used region specification specified by the function of the optical element in the used beam path. Light deflection structures with a geometrically defined surface design are in the edge region of at least one of the light passage surfaces.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A method comprises: providing FIB and CPB columns with FIB and CPB optical axes coinciding at a wafer surface; in the coincidence arrangement, removing a cross section surface layer of a measurement site of a wafer using the FIB column to make a new cross section accessible for imaging; reducing a working distance between the CPB imaging column and the wafer surface in a direction along the axis of the CPB imaging column; imaging the new cross section at the measurement site of the wafer with the CPB imaging column at the reduced working distance and thus not in the coincidence arrangement; and increasing the working distance between the CPB imaging column and the wafer surface in the direction along the axis of the CPB imaging column until the coincidence arrangement is reached.
An optical system comprising an EUV mirror, wherein the EUV mirror is provided with an optical surface designed for the reflection of EUV radiation. An EUV beam path generated by an EUV radiation source is directed at the optical surface of the EUV mirror, such that the EUV beam path is incident on the EUV mirror at an angle of not more than 12°. The optical surface is covered with a carbon layer, wherein the carbon layer has a thickness of at least 8 nm. The invention also relates to a method for operating an optical system.
METHOD FOR MEASURING AN EFFECT OF A WAVELENGTH-DEPENDENT MEASURING LIGHT REFLECTIVITY AND AN EFFECT OF A POLARIZATION OF MEASURING LIGHT ON A MEASURING LIGHT IMPINGEMENT ON A LITHOGRAPHY MASK
To measure an effect of a wavelength-dependent measuring light reflectivity RRet of a lithography mask, a measuring light beam is caused to impinge on said lithography mask within a field of view of a measuring apparatus. The measuring light has a wavelength bandwidth between a wavelength lower limit and a wavelength upper limit differing therefrom. The reflected measuring light emanating from an impinged section of the lithography mask is captured by a detector. A filter with a wavelength-dependent transmission within the wavelength bandwidth is introduced into a beam path of the measuring light beam between the measuring light source and the detector. The measuring light reflected by the lithography mask is captured again by the detector once the filter has been introduced. The wavelength-dependent reflectivity RRet or an effect of the wavelength-dependent reflectivity RRet is determined on the basis of the capture results. In comparison with the prior art, this yields an improved method for measuring an effect of a measuring light reflectivity on a lithography mask. Additionally, a method for measuring an effect of a polarization of measuring light on a measuring light impingement on a lithography mask is specified, wherein as a result of this the effect of the lithography mask on measuring light is made accessible in respect of further optical parameters of a measurement.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01N 21/956 - Inspection de motifs sur la surface d'objets
75.
COMPUTER IMPLEMENTED METHOD FOR DEFECT DETECTION IN IMAGING DATASETS OF A PORTION OF AN OBJECT COMPRISING INTEGRATED CIRCUIT PATTERNS AND CORRESPONDING COMPUTER-READABLE MEDIUM, COMPUTER PROGRAM AND SYSTEM
The invention relates to a computer implemented method for defect detection, the method comprises: obtaining a first imaging dataset of a portion of an object comprising integrated circuit patterns; obtaining at least a second imaging dataset and a third imaging dataset comprising predominantly the same integrated circuit patterns as the portion of the object; and jointly processing at least the first imaging dataset, the second imaging dataset and the third imaging dataset to detect defects. The invention also relates to a corresponding computer program, computer-readable medium and system for defect detection.
Disclosed is a mask inspection device for photomasks of EUV lithography. The mask inspection device comprises here a receiving device for a photomask, a light source for illuminating the photomask with an illumination beam, and a detection unit for recording at least regions of the photomask. Furthermore, the mask inspection device comprises at least one beam-shaping element for adapting the illumination beam and at least one stop in the light path between the photomask and the detection unit. The at least one beam-shaping element and the at least one stop are arranged in a fixed spatial relationship to one another on a common carrier element. Also disclosed is the corresponding carrier element.
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
77.
COMPUTER IMPLEMENTED METHOD FOR DEFECT DETECTION IN AN OBJECT COMPRISING INTEGRATED CIRCUIT PATTERNS AND CORRESPONDING COMPUTER-READABLE MEDIUM, COMPUTER PROGRAM AND SYSTEM
The invention relates to a computer implemented method for defect detection in an object comprising integrated circuit patterns comprising: obtaining an imaging dataset and a reference dataset of the object; generating an input representation of a subset of the imaging dataset and a reference representation of a corresponding subset of the reference dataset in a feature space; and detecting defects in the object by comparing the input representation to the reference representation in the feature space. The invention also relates to a corresponding computer-readable medium, computer program product and system for defect detection.
The invention relates to a computer implemented method for defect detection in an imaging dataset of an object comprising integrated circuit patterns, the method comprising: obtaining defect candidates in the imaging dataset; subsequently carrying out at least two stages, each stage comprising the following steps: applying a stage specific defect detection method to the defect candidates; discarding defect-free defect candidates; obtaining detected defects in the imaging dataset from the remaining defect candidates. The invention also relates to a corresponding computer-readable medium, computer program and system.
An actuator for semiconductor lithography comprises an actuator element, a compensation element and a connection element. The actuator element has a first coefficient of thermal expansion and a connection site at its first end for the active adjustment of an optical element along at least one adjustment axis. The compensation element has a second coefficient of thermal expansion. The sign of the second coefficient of thermal expansion corresponds to the sign of the first coefficient of thermal expansion. The compensation element is oriented coaxially in relation to the adjustment axis. The compensation element has a coupling site held stationary in space or stationary in relation to the optical element. The connection element connects the actuator element and the compensation element at positions located remote from the connection site and from the coupling site. A deformation mirror includes a mirror substrate and an actuator.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
80.
ILLUMINATION OPTICAL UNIT FOR PROJECTION LITHOGRAPHY
An illumination optical unit for projection lithography illuminates an object field of a downstream imaging optical unit with illumination light from an EUV light source. A first facet mirror has a plurality of adjacently arranged first facets for specifying partial fields which are transferred into partial sections of the object field using the illumination optical unit. A further facet mirror disposed downstream of the first facet mirror has a plurality of adjacently arranged, individually tiltable further facets. The two facet mirrors serve for reflective, at least partially overlaid guidance of component beams of an overall beam of the illumination light via at least one of the first facets and via at least one of the further facets. A curved transfer mirror is disposed downstream of the further facet mirror and serves for the beam-shaping transfer of the overall beam of the illumination light into the object field.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
81.
METHOD FOR IMAGE ENHANCEMENT IN AN IMAGING DATASET OF AN OBJECT COMPRISING INTEGRATED CIRCUIT PATTERNS AND CORRESPONDING COMPUTER PROGRAM, COMPUTER-READABLE MEDIUM AND SYSTEM
The invention relates to a method for defect detection comprising: acquiring an imaging dataset of an object comprising integrated circuit patterns using an imaging system; obtaining a reference dataset corresponding to the acquired imaging dataset; generating an enhanced imaging dataset by filtering the acquired imaging dataset with one or more learned filters, wherein the one or more learned filters are obtained by solving an optimization problem comprising the deviation of the enhanced imaging dataset from the reference dataset; and detecting defects in the acquired imaging dataset by comparing the enhanced imaging dataset to the corresponding reference dataset. The invention also relates to a corresponding computer program, a computer-readable medium and a system for defect detection in objects comprising integrated circuit patterns.
A method for characterizing a lithography apparatus, in particular, a method for characterizing a lithography apparatus configured to cause an obscuration of radiation, as well as a lithography apparatus and a computer program product configured to carry out the methods. A method for characterizing a lithography apparatus; detecting first diffracted radiation of the lithography apparatus, wherein the first diffracted radiation was diffracted at a characterization element; determining a diffraction property of the characterization element based on at least in part the first substantially undiffracted radiation and the first diffracted radiation.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
83.
METHOD FOR MEASURING AN ILLUMINATION ANGLE DISTRIBUTION ON AN OBJECT FIELD AND ILLUMINATION OPTICS UNIT HAVING AN ILLUMINATION CHANNEL ALLOCATION INTENDED THEREFOR
To measure an illumination angle distribution, which is established via a multiplicity of illumination channels of an illumination optics unit, on an object field via an obscured projection optics unit, a setpoint pupil lighting of an illumination pupil of the illumination optics unit is initially established. With the aid of the setpoint pupil lighting, whether splitting of a measurement pupil lighting into a reflection measurement pupil and a diffraction measurement pupil is desired is checked. Depending on the result of the check, a reflection measurement pupil lighting and/or a diffraction measurement pupil lighting of the illumination optics unit is established by establishing corresponding illumination channels. The reflection measurement pupil lighting is measured by inserting a reflective object into the object field and/or the diffraction measurement pupil lighting is measured by inserting a diffractive object into the object field. An actual pupil lighting is reconstructed from the measurement data.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An optical component (100, 200) for a lithography apparatus (1) includes an optical element (102, 202), produced from a first material (G102) and having an optically effective surface (106, 206); and a carrying element (104, 204), produced from a second material (G104) and carrying the optical element (102, 202). The second material (G104) differs from the first material (G102) and a ratio of the densities of the first and second materials (G102, G104) deviates from 1 by less than 20%, preferably by less than 10% or even less than 5%. The optical element and the carrying element each have principal extension planes (H102, H202, H104, H204) having maximum extents. The maximum extent (D102, A202) of the optical element (102, 202) is less than 90%, preferably less than 80% or even less than 75% of the maximum extent (A104, D204) of the carrying element.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
Disclosed is a method for determining a location of an object surface (16) in relation to a target location in a measuring device for semiconductor technology, the location being determined on the basis of at least two measured values which represent the location, wherein the determination of the location comprises a probability analysis.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
G02B 7/36 - Systèmes pour la génération automatique de signaux de mise au point utilisant des techniques liées à la netteté de l'image
86.
ARRANGEMENT, METHOD AND COMPUTER PROGRAM PRODUCT FOR CALIBRATING FACET MIRRORS
An arrangement (100), a method and a computer program product for system-integrated calibration of facet mirrors (18, 19) of a microlithographic illumination system (20). Beam paths (103) between a radiation source (101) and a radiation detector (102) are created by the facet mirrors (18, 19), with respectively only one pivotable micromirror (18″, 19″) of each facet mirror (18, 19) affecting said beam path. By methodically pivoting one of the micromirrors (18″, 19″) affecting the beam path (10), it is possible, based on the radiation detector (102), to find a specific optimal pivot position, the underlying orientation of the micromirror (18″, 19″) of which can also be calculated geometrically. By comparing the calculated orientation with the orientation ascertained by a tilt sensor on the micromirror (18″, 19″), it is possible to calibrate the tilt sensor or micromirror (18″, 19″) of the facet mirror (18, 19).
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A measuring apparatus (10; 110; 210; 310; 410; 510; 610; 710) for interferometric determination of a property (50; 52) of a shape (50) of a test surface (12) of an object under test (14) comprises an irradiation device (22) for generating an input wave (24), a splitting module (18; 118; 318; 418; 518) configured to generate, from the input wave, two plane waves (32, 34) with parallel directions of propagation and with an offset from one another across the directions of propagation, a wavefront adaptation module (20; 720) for generating two measurement waves (44, 46) by adapting the respective wavefront of the plane waves with an offset from one another to a target shape of the optical test surface, and a detector (56) for capturing at least one interferogram (64) generated by superposition of the measurement waves (44r, 46r) following their interaction with the test surface.
This disclosure relates to a reflective optical element for a wavelength in the extreme ultraviolet wavelength range, comprising a substrate and a reflective coating designed as a multi-layer system. The multi-layer system has alternating layers of at least two different base materials different real parts of their refractive indexes in the extreme ultraviolet wavelength range. An electrical field standing wave is formed in the multilayer system by the reflection of extreme ultraviolet wavelength radiation. The multi-layer system has another material at least in a layer at a point of extreme field intensity, wherein the reflective optical element has a material as the other material at at least one point of minimal field intensity, which has greater absorption for the reflected wavelength than the at least partially replaced one.
A computer implemented method for the detection of anomalies comprises: selecting an imaging dataset of a wafer and a hyperparameter value defining a machine learning model for anomaly detection; training and evaluating the machine learning model by computing an objective function value; and selecting one of the trained machine learning models and applying it to detect anomalies. A computer implemented method for the detection of anomalies in an imaging dataset of a wafer comprises: providing samples of a distribution of anomaly detection image values for each defect class; calibrating the anomaly detection image by training a machine learning model for anomaly localization; and applying a threshold to the calibrated anomaly detection image to detect anomalies.
A control device for controlling and measuring an actuator for actuating an optical element of an optical system, comprises a voltage measuring unit, a current measuring unit, a first matched filter unit and a second matched filter unit. A method for controlling and measuring an actuator for actuating an optical element of an optical system comprises: providing a measurement voltage; providing a measurement current; estimating, via a first matched filter unit, a voltage amplitude and an associated phase of a measurement signal component; estimating, via a second matched filter unit, a current amplitude and an associated phase of the measurement signal component; and calculating an impedance of an actuator based on the estimated voltage amplitude, the estimated associated phase, the estimated current amplitude and the estimated associated phase.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
Disclosed is a method for aligning two components (31, 33) of a projection exposure apparatus (1, 101) for semiconductor lithography, comprising:
inserting at least one mandrel (30, 50) of a first component (33) into a recess (94) in a second component (31) in the z-direction,
preloading the mandrel (30, 50) perpendicular to the z-direction to a predetermined torque for pre-positioning the two components (31,33) in relation to each other in the x-y plane,
positioning the two components (31, 33) in the z-direction until they are in contact with a contact force FA,
bracing the mandrel (30, 50) with the recess (94) with maximum torque,
positioning the two components in the z-direction until the first component (31) rests on the second component (33) with maximum weight force Fmax.
Disclosed is a method for aligning two components (31, 33) of a projection exposure apparatus (1, 101) for semiconductor lithography, comprising:
inserting at least one mandrel (30, 50) of a first component (33) into a recess (94) in a second component (31) in the z-direction,
preloading the mandrel (30, 50) perpendicular to the z-direction to a predetermined torque for pre-positioning the two components (31,33) in relation to each other in the x-y plane,
positioning the two components (31, 33) in the z-direction until they are in contact with a contact force FA,
bracing the mandrel (30, 50) with the recess (94) with maximum torque,
positioning the two components in the z-direction until the first component (31) rests on the second component (33) with maximum weight force Fmax.
Also disclosed is device for aligning the two components (31, 33) comprises the mandrel.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
92.
PROCESS AND DEVICE FOR CHEMICAL PROCESSING OF A SURFACE
A process for chemical processing of a surface, in particular (32) of a substrate (31) of a component (MX, 117) of a projection exposure apparatus (1, 101) for semiconductor lithography. A chemical processing brought about by a reaction fluid (38) is limited to a predetermined region (36) by application of a further fluid (39) to this region (36). Also disclosed is a device (30) for chemical processing of at least one surface (32), wherein the device (30) includes a spray array with at least two spray units (34,35) for applying a fluid (38,39). A first spray unit (34) is embodied such that a first region (36) of the surface (32) is treated with a reaction fluid (38) and a second spray unit (35) is embodied such that a second region (37) of the surface (32) is treated with the further fluid (39).
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/30 - Dépouillement selon l'image utilisant des moyens liquides
93.
3D VOLUME INSPECTION OF SEMICONDUCTOR WAFERS WITH INCREASED THROUGHPUT AND ACCURACY
A system and a method for volume inspection of semiconductor wafers are configured for milling and fast image acquisition of cross-sections surfaces in an inspection volume. High quality images can be obtained by restriction of the imaging to regions of interest or by averaging over several fast image scans. The method and device can be utilized for quantitative metrology, defect detection, process monitoring, defect review, and inspection of integrated circuits within semiconductor wafers.
A drive device for driving and measuring an actuator for actuating an optical element of an optical system comprises a drive unit, a voltage measuring unit and a current measuring unit having a frequency-dependent first transfer function configured to amplify a time-dependent
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
95.
OPTICAL DEVICE, METHOD FOR MEASURING AN ACTUAL TILT OF AN OPTICAL SURFACE OF AN OPTICAL ELEMENT, AND LITHOGRAPHY SYSTEM
An optical device, such as for a lithography system, comprises: at least one optical element having at least one optical surface; one or more actuators to tilt the optical surface of the optical element; and a measuring device to detect a tilt of the optical surface from an idle position. The measuring device has at least one waveguide which forms a closed measuring section. The waveguide is designed for coupling in and propagating one or more modes of a measuring beam. The waveguide is arranged such that a tilt of the optical surface influences the measuring beam propagating through the waveguide. The measuring device is designed to detect an influencing of the measuring beam caused by the tilt of the optical surface.
G01B 11/26 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
96.
METHOD FOR INCORPORATING TEMPERATURE-REGULATING HOLLOW STRUCTURES INTO A SUBSTRATE, IN PARTICULAR INTO A SUBSTRATE FOR AN OPTICAL ELEMENT, METHOD AND SUBSTRATE FOR PRODUCING AN OPTICAL ELEMENT, OPTICAL ELEMENT, PROCESSING SYSTEM AND ALSO APPARATUS PERTAINING TO SEMICONDUCTOR TECHNOLOGY AND STRUCTURED ELECTRONIC COMPONENT
In a method for incorporating temperature-regulating hollow structures into a substrate, in particular into a substrate for an optical element, such as a mirror for an EUV projection exposure apparatus, there are the following steps: (A) providing a substrate; (B) progressively focusing a processing light beam on ablation locations at which temperature-regulating hollow structures are intended to arise; (C) a scanning process is carried out in which the processing light beam is guided with a focus in such a way that an ablation focus is moved along a scanning trajectory; (D) the scanning trajectory comprises a plurality of scanning patterns; (E) the scanning positions are spaced apart from one another in a longitudinal direction of the temperature-regulating hollow structure to be produced; and (F) the scanning trajectory additionally comprises pattern jump paths.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
97.
METHOD FOR PRODUCING A TEMPERATURE-CONTROLLING HOLLOW STRUCTURE IN A SUBSTRATE USING A PROCESSING LIGHT BEAM
In the case of a method for producing a temperature-controlling hollow structure in a substrate, first of all a substrate consisting of a substrate material is provided. The substrate is surveyed in order to ascertain where inclusions are in the substrate. Then, a temperature-controlling hollow structure is worked into the substrate by focusing a processing light beam with a beam axis aligned along a standard direction successively onto processing locations at which the temperature-controlling hollow structure is to be produced. As a result, the substrate material is modified or removed at the processing locations. If an inclusion is on the beam axis aligned along the standard direction, the direction of the beam axis relative to the mirror substrate is changed such that the beam axis does not intersect the inclusion.
B23K 26/55 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour créer des vides dans la pièce à travailler, p. ex. pour former des passages ou des configurations de flux
B23K 26/06 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples
The present invention relates to methods, to an apparatus and to a computer program for processing of an object for lithography.
The present invention relates to methods, to an apparatus and to a computer program for processing of an object for lithography.
A method of processing an object for lithography comprises: providing a first gas comprising first molecules; providing a particle beam in a working region of the object for removal of a first material in the working region, based at least partly on the first gas. The first material may comprise chromium and nitrogen. In addition, the first material may comprise at least 5 atomic percent of nitrogen, preferably at least 10 atomic percent of nitrogen, especially preferably at least 20 atomic percent of nitrogen.
G03F 1/72 - Réparation ou correction des défauts dans un masque
G03F 1/78 - Création des motifs d'un masque par imagerie par un faisceau de particules chargées [CPB charged particle beam], p. ex. création des motifs d'un masque par un faisceau d'électrons
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
The disclosure relates to a method for processing a lithography object. The method comprises using a particle beam and an etching gas to process a marking in order to reduce the volume of the marking, the marking having been deposited on the object and remaining on the object. The invention also relates to a corresponding computer program and a corresponding device.
G03F 1/42 - Aspects liés à l'alignement ou au cadrage, p. ex. marquages d'alignement sur le substrat du masque
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé
100.
COMPUTER IMPLEMENTED METHOD FOR THE DETECTION AND CLASSIFICATION OF ANOMALIES IN AN IMAGING DATASET OF A WAFER, AND SYSTEMS MAKING USE OF SUCH METHODS
A computer implemented method detects and classifies anomalies in an imaging dataset of a wafer comprising a plurality of semiconductor structures. The method comprises determining a current detection of a plurality of anomalies in the imaging dataset, and obtaining an unsupervised or semi-supervised clustering of the current detection of the plurality of anomalies. Based on at least one decision criterion at least one cluster of the clustering is selected for presentation and annotation to a user via a user interface. An anomaly classification algorithm is re-trained based on the annotated anomalies. A system for controlling the quality of wafers and a system for controlling the production of wafers are also disclosed.
brevets
