Abrégé

An X-ray inspection system serves for inspection of an object. An X-ray source of the system generates X-rays to propagate through a region of interest of the object. An object mount holds the object to be inspected such that the ROI is accessible for the generated X-rays. A detection system detects the X-rays after propagation through the ROI. The X-ray source generates a plurality of separate X-ray light bundles to propagate through the ROI. Chief rays of at least two of the generated separate X-ray light bundles impinge on the ROI of the object with different chief ray illumination angles. The detection system comprises separate detection areas to detect the separate X-ray light bundles, respectively. Such an inspection system can exhibit relatively fast image data acquisition.

Classes IPC  ?

• G01N 23/044 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux en utilisant la laminographie ou la tomosynthèse
• G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X

Abrégé

A method for examining a blank of a microlithographic photomask, including the steps of: a) arranging the blank on a first stage of a first examination apparatus such that a first and a second edge of the blank rest against stops of the first stage, b) ascertaining an examination location on the blank in a first coordinate system with the aid of the first examination apparatus, c) arranging the blank on a second stage of a second examination apparatus having an image recording unit, d) recording at least one image of the blank using the image recording unit such that the first and second edge are captured at least in part, and e) ascertaining a transformation rule on the basis of the first and second edge captured in the at least one image, in order to transform the examination location captured in the first coordinate system into a second coordinate system (142) of the second examination apparatus.

Classes IPC  ?

• G03F 1/84 - Inspection
• G03F 1/44 - Aspects liés au test ou à la mesure, p. ex. motifs de grille, contrôleurs de focus, échelles en dents de scie ou échelles à encoches

Abrégé

The present invention relates to a projection system for a projection exposure apparatus for micro-lithography, in particular for EUV lithography, comprising an optical element. The problem of providing a projection system for a projection exposure apparatus for micro-lithography, in particular for EUV lithography, in which thermally induced, oscillating aberrations are minimised is solved in that the projection system comprises a radiation-absorbing element which is configured to temporarily interrupt the beam path of the projection system behind the optical element.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A projection exposure apparatus has a heating device for heating at least one element of the projection exposure apparatus via electromagnetic radiation. The heating device comprises an illumination optical unit having a housing and at least one optical element, arranged within the housing, for influencing the electromagnetic radiation. The at least one optical element is fixed within the housing by way of at least one elastic element.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A facet mirror assembly has a carrier body for a plurality of individual mirrors. Reflection surfaces of the individual mirrors are individually tiltable, via assigned tilt actuators, about at least one tilt axis within an individual mirror tilt angle range around a neutral tilt position between a maximum angle and a minimum angle. The individual mirrors have at least two different neutral tilt positions in a range around a mean value of a total tilt angle range. The result can be a facet mirror assembly having improved properties with respect to a tilt actuator system of the facet mirror assembly.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G02B 5/09 - Miroirs à facettes multiples ou polygonales

Abrégé

The invention relates to an EUV mirror system comprising a vacuum chamber (23), an EUV mirror (17, 28, M1-M6) arranged in the vacuum chamber (23) and a heating device (35) for the EUV mirror (17, 28, M1-M6). The EUV mirror (17, 28, M1-M6) comprises a mirror body (30) and an optical surface (32) formed on the mirror body (30). A separating wall (28) used to delimit a mini environment (29) adjacent to the optical surface (32) of the EUV mirror (17, 28, M1-M6) from a main space (34) of the vacuum chamber is arranged in the vacuum chamber (23). The heating device (35) comprises a radiation source (26) and a mirror element (31) such that heating radiation (36) emitted by the radiation source (26) is reflected off the mirror element (31) and guided to the optical surface (32) of the EUV mirror (17, 28, M1-M6). The mirror element (31) is arranged outside of the mini environment (29). The mirror element (31) is designed as a MEMS mirror module. The heating radiation (36), coming from the MEMS mirror module, is guided through the separating wall (28) to the optical surface (32). The invention also relates to a method for operating an EUV mirror system.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet
• G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs

Abrégé

The invention relates to methods for producing an optical element (1) for an optical system, the optical element having a target surface shape (1a) and/or a target optical effect during the operation of the optical system, wherein the optical element (1) has a mean operating temperature (F) which during the operation of the optical system is controlled by at least one thermal manipulator (2). The invention also relates to an optical element for an optical system, and to an optical system for a semiconductor technology apparatus.

Classes IPC  ?

• B29D 11/00 - Fabrication d'éléments optiques, p. ex. lentilles ou prismes
• G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
• G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

The invention relates to a method for controlling the temperature of a sensor frame (27) in a microlithographic projection system (20) with optical elements (23, 40, Mi) fastened to a support frame (24), at least one sensor (28) fastened to the sensor frame (27) for determining, in a non-contact manner, a relative position of at least one of the optical elements (23, 40, Mi) and with at least one fluid line (50, 51, 52, 53) guided at least in some portions along the sensor frame (27) for actively controlling the temperature of at least one of the optical elements (23, 40, Mi), wherein the projection system (20) is located in a vacuum chamber (101). According to the invention, the following steps are carried out: – using the fluid line (50, 51, 52, 53) as a thermal actuator for introducing thermal energy into the sensor frame (27) by conducting a thermal fluid through the fluid line (50, 51, 52, 53); – evacuating the vacuum chamber (101) starting from an initial pressure down to a predefined minimal pressure; – controlling the thermal actuator such that the temperature of the sensor frame (27) is actively controlled to a predefined target temperature. As a result of the method according to the invention, a wait time needed after the evacuation, within which the sensor frame reaches a target temperature specified for further operation, can be significantly reduced.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

The invention relates to an adaptive optical module (38A) for a microlithographic projection exposure system (10; 210), comprising: an optical surface (32) for interacting with exposure radiation (14) of the projection exposure system; and a plurality of actuators (36n-1, 36n, 36n+1) for modifying a shape of the optical surface. The adaptive optical module comprises a dielectric medium (48) that can be deformed by applying an electric voltage (68), and each of the actuators comprises a separate control electrode (62n-1, 62n, 62n+1) which in each case is designed to generate an electric field in a layer of the dielectric medium. The control electrodes are connected to one another by means of a weakly conductive structure (60) having an electrical conductivity of at least 0.1 mS/m, and, in order to measure an impedance (86n-1, 86n, 86n+1) of at least one of the actuators, a measurement electrode (58n-1, 58n, 58n+1) is arranged between the control electrode of the actuator being measured and the dielectric medium.

Classes IPC  ?

• G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière

Abrégé

0HHT00 (60) during the operation of the micromirror field (10).

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G01K 7/16 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs
• G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
• H05B 1/02 - Dispositions de commutation automatique spécialement adaptées aux appareils de chauffage

Abrégé

An optical rod (19) is used to mix illumination light in an illumination optical unit of a lithographic projection exposure system. A cylindrical rod main part (19a) is divided into at least two cylindrical main part portions (39, 40). Between the two main part portions is at least one partial reflection layer (41) for the illumination light, said partial reflection layer being positioned between an inlet surface (18) and an outlet surface (20) of the rod main part (19a). End-face cross-sections of the main part portions (39, 40) complement each other in order to form the rod cross-section of the rod main part (19a). The result is an optical rod with an improved light mixing function.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet
• G02B 27/09 - Mise en forme du faisceau, p. ex. changement de la section transversale, non prévue ailleurs

Abrégé

An optical system is used to guide illuminating and imaging light (7) from a light source (5; 42) to an image field (34) in which a substrate (36) can be disposed. An optical assembly (31a, 32) is used to guide the illuminating and imaging light (7) along a beam path between the light source (5) and the image field (34) via at least one field plane (38, 33, 35) and via at least one pupil plane (23, 39). The light source (42) and/or a chromatic filter (37) disposed downstream of the light source (5) in the beam path is designed such that, for the imaging light (7) generated by means of the light source (5; 42), a wavelength bandwidth between a total wavelength bandwidth and a reduction wavelength bandwidth which is at least 10% smaller than the total wavelength bandwidth can be defined. The result is an optical system which improves the imaging performance for imaging in particular objects that have structures having different imaging requirements.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Produits et services

Instruments and applications for the correction of wafer forms; laser system to correct distorsion of wafers; computer software for inspecting wafers

Abrégé

The invention relates to a transport and test system for a camera (23), comprising the camera (23), a camera cover (33) and a vacuum connection (35). The camera (23), which can be in particular an EUV camera, comprises a camera housing (25) and an image sensor (24) arranged on the camera housing (25). A vacuum flange (31) intended for connection to a vacuum housing is formed on the camera housing (25). The camera cover (33) has a mating flange (34) which complements the vacuum flange (31). In a connected state, the camera (23), the camera cover (33) and the vacuum connection (35) form a camera unit (38) which encloses an interior (39) in a vacuum-tight manner such that a negative pressure can be applied in the interior (39) via the vacuum connection (35). The invention also relates to a method for testing a camera, in particular an EUV camera.

Classes IPC  ?

• H04N 17/00 - Diagnostic, test ou mesure, ou leurs détails, pour les systèmes de télévision
• H04N 23/50 - Détails de structure

Abrégé

The invention relates to an optical element (25) for reflecting EUV radiation (16), comprising: a substrate (26), a reflective coating (27) for reflecting the EUV radiation (16), and an etchable material (29) which is covered by the reflective coating (27) and is removed on contact with an etching medium (31). In a first aspect, the reflective coating (27) is under mechanical prestress in order to cause a curvature of the reflective coating (27) in the direction of the substrate (26) when the etchable material (29) is removed by the etching medium (31) in the event of damage to the reflective coating (27). In a second aspect, the etchable material (29) is doped with a dopant which is not removed on contact with the etching medium (31) and which accumulates preferably at an etching front of the etchable material when the etchable material (29) is removed by the etching medium (31) in the event of damage to the reflective coating (27). The invention also relates to an EUV lithography system which has at least one such optical element (25) which is exposed to an etching medium (31) during operation of the EUV lithography system.

Classes IPC  ?

• G02B 5/08 - Miroirs

Abrégé

A method for processing a defect of a microlithographic photomask is disclosed, wherein a process gas is activated with the aid of a particle beam, wherein a control unit is provided for controlling a deflection unit with a control bandwidth, wherein the deflection unit for deflecting the particle beam is configured to guide the particle beam over the photomask, including the following steps: a) providing an image of at least a portion of the photomask, b) ascertaining a repair shape (in the image on the basis of the control bandwidth, wherein the repair shape comprises the defect, and c) providing the particle beam at m pixels of the repair shape with the aid of the deflection unit, and activating the process gas for the purpose of processing the defect.

Classes IPC  ?

• G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé
• G03F 1/86 - Inspection au moyen d'un faisceau de particules chargées [CPB charged particle beam]

Abrégé

A measuring assembly for determining at least one distance between a first and a second optical element (2, 3). The first element is translucent as a measuring matrix and has a semi-reflective first surface (7). The second optical element is an EUV mirror and has an at least semi-reflective second surface (8). The first surface lies opposite the second surface at the distance to be detected. A light beam (14) generated by a light beam source (13) is coupled into the first optical element by a surface (11) that is different from the first surface. A first partial light beam (19) is reflected by the first surface and a second partial light beam (16) passing through the first surface is reflected by the second surface and each back into the first optical element. A light beam sensor (21) is arranged to detect both partial light beams, to determine the distance.

Classes IPC  ?

• G01M 11/08 - Test des propriétés mécaniques

Abrégé

An optical assembly has an optical element which comprises a main body. At least one actuator serves to deform the main body and is arranged on the back side of the main body. The at least one actuator is connected at a first connecting surface to the back side of the main body. The at least one actuator is connected at a second connecting surface to a back plate. The back plate is mounted exclusively by way of the actuator.

Classes IPC  ?

• G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

The disclosed techniques relate to a method for producing a base element of an optical element for semiconductor lithography, comprising the following steps: firstly, producing a material mixture comprising at least two material components; secondly, producing an intermediate element from the material mixture, wherein the material mixture comprises at least one first material component made of the material of the later base element, and wherein the material mixture comprises a second material component that functions to mechanically stabilise the intermediate element; thirdly, producing the base element from the intermediate element via temporary heating and at least partial removal of the second material component. The disclosed techniques also relate to an optical element produced using the method according to the disclosed techniques, a base element, an optical element, and a projection exposure system for semiconductor lithography provided with the optical element

Classes IPC  ?

• B29C 64/153 - Procédés de fabrication additive n’utilisant que des matériaux solides utilisant des couches de poudre avec jonction sélective, p. ex. par frittage ou fusion laser sélectif
• B33Y 10/00 - Procédés de fabrication additive
• B33Y 70/00 - Matériaux spécialement adaptés à la fabrication additive
• B33Y 80/00 - Produits obtenus par fabrication additive
• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A mirror for a projection exposure apparatus has a spectral filter, embodied as a grating structure, for light reflected by the mirror. The grating structure has at least two grating levels and hence specifies at least two optical path lengths for the reflected light. An overall flank portion of the grating structure is arranged in each case between grating level structure portions of the grating structure, which each specify adjacent grating levels. A lower limit spatial wavelength over a defect-free partial flank portion of the overall flank portion making up at least an extent of 90% of the overall flank portion is in the range from 0.01 μm to 1 μm exclusive.

Classes IPC  ?

• G02B 5/18 - Grilles de diffraction
• G02B 5/20 - Filtres
• G02B 5/26 - Filtres réfléchissants
• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

Computer-implemented method for processing a sample (102, 702) arranged on a sample stage (120) with a nanomanipulator (104) comprising a tip (106, 706) for processing the sample (102, 702) and a positioning unit (110) for moving the tip (106, 706), the method comprising the following steps: - focussing (S10) an image (146) provided by an image recording device (124, 724) on the tip (106, 706) and/or the sample (102, 702); - selecting (S11) the sample (102, 702) or the tip (106, 706) as a target feature; and - automatically setting (S12) a focal point (726) of the nanomanipulator (104) based on at least one operating parameter of one of the sample stage (120) and the positioning unit (110) indicative of a vertical movement of the sample stage (120) and/or the positioning unit (110), respectively, so as to keep the target feature focussed within the image provided by the image recording device (124, 724) during processing.

Abrégé

The disclosure provides a method for landing a tip (106) of a probe (1106) of a nanomanipulator (104) on a sample (102, 1102), in particular in vacuum, the probe (1106) comprising a cantilever (108) and the tip (106) attached thereto, the nanomanipulator (104) further comprising an excitation unit (1110), the probe (1106) being mechanically coupled with the excitation unit (1110), the method including the following steps: - oscillating the probe (1106) by providing a resonant driving signal (1010) to the excitation unit (1110) while the tip (106) is not in contact with the sample (102); - reducing a first distance in a z-direction between the tip (106) and the sample (102) during a first approach phase until at least one first stop condition of a first set of stop conditions is met, wherein the first set of stop conditions comprises detecting a shift in the frequency of the resonant driving signal (1010) used during the first approach phase; and - terminating the first approach phase when the at least one first stop condition of the first set of stop conditions is met, and deactivating the resonant driving signal (1010).

Classes IPC  ?

• G03F 1/82 - Procédés auxiliaires, p. ex. nettoyage ou inspection

Produits et services

instruments and applications for the correction of wafer forms; laser system to correct distorsion of wafers; computer software for inspecting wafers.

Abrégé

An imaging EUV optical unit serves for imaging an object field into an image field. The EUV optical unit has a plurality of mirrors for guiding EUV imaging light at a wavelength of less than 30 nanometers along an imaging beam path from the object field towards the image field. The EUV optical unit has four normal incidence (NI) mirrors. The overall transmission of the NI mirrors is greater than 10%. The mirrors lead to an overall polarization rotation of no more than 10° along the imaging beam path when linearly polarized EUV imaging light is used. This can yield an imaging EUV optical unit with an increased EUV throughput while observing exacting demands on the imaging quality.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G02B 17/06 - Systèmes catoptriques, p. ex. systèmes redressant et renversant une image utilisant uniquement des miroirs

Abrégé

An optical element for a projection exposure apparatus for semiconductor lithography comprises a main body and at least two actuators connected to the main body. The actuators are designed for deforming an optical effective surface of the optical element. The at least two actuators are ring actuators. A corresponding apparatus comprises such an optical element.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

The invention relates to a microlithographic projection exposure system comprising a lighting system (10) and a projection objective (22). The lighting system (10) has a first set of optical elements (18, 19) which are designed to guide electromagnetic radiation emitted by a radiation source (14) onto a photomask (13) in order to illuminate the photomask (13) with the electromagnetic radiation. The projection objective (22) can have a second set of optical elements (M1-M6) in order to form an imaging beam path, by means of which the photomask (13) is imaged onto a lithography object. An actuator (33, 39, 67) can be designed to adjust an operating parameter of an optical element (18, 19) of the lighting system (10) or of an optical element (M1-M6) of the projection objective (22). The actuator (33, 39, 67) is electrically actuated via an input interface (42), wherein the electric actuation runs between the input interface (42) and the actuator (33, 39, 67) via a printed circuit board (70). The printed circuit board (70) is arranged in the interior of a housing (34), and the housing (34) is equipped with a cooling channel (46). The printed circuit board (70) is releasably connected to the housing (34) such that the printed circuit board (70) can be separated from the housing (34) without opening the cooling channel (46).

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet

Abrégé

A method for heating an optical element in an optical system, such as a microlithographic projection exposure system, comprises introducing a heating power into the optical element using a thermal manipulator. The heating power is adjusted to a set of desired values. The set of desired values is adjusted to produce a thermally induced deformation depending on a first optical aberration to be compensated. Adjusting the set of desired values also includes taking into account the effect of introducing the heating power on a second optical aberration which is caused by useful light impinging on the optical element during operation of the optical system. The thermally induced deformation profile can be co-optimized.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G01M 11/02 - Test des propriétés optiques

Abrégé

An EUV collector for an EUV projection exposure apparatus transfers usable EUV light emerging from a source volume into a collection volume separated from the source volume. The source volume has a first source extension along a connection axis between a center of the source volume and a center of the collection volume. The source volume has a second, cross section source extension along a cross section axis perpendicular to the connection axis. The EUV collector images the source volume into the collection volume. The imaging has a first imaging scale along the connection axis and a second imaging scale along the cross section axis. The first imaging scale differs from the second imaging scale by at least 10%.

Classes IPC  ?

• H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A method of operating a microlithographic projection exposure apparatus at least partially compensates an image offset. The method includes illuminating different field regions of the object plane with differing illumination settings, and producing a field-dependent image offset during imaging of the object plane onto the image plane. The field-dependent illumination and the field-dependent image offset can reduce the loss of imaging contrast as a whole. The field-dependent illumination can be implemented by a MEMS facet mirror in the illumination device, and the field-dependent image offset can be implemented by a horizontal and/or vertical mask distortion in combination with an adapted feed modification.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A measurement system (24) has two facet mirrors (20, 21), the individual mirrors (21) of which can be tilted by way of respective tilting actuator devices each comprising at least one tilting actuator (23a). The two facet mirrors (20, 22) are usable as an illumination optical unit of a projection exposure apparatus. The individual mirrors (23) of the second facet mirror (22) are part of a transfer optical unit, by way of which the individual mirrors (21) of the first facet mirror (20) are imageable into an object field (5) illuminated by the illumination optical unit (4). The measurement system has a measurement light beam selection device (27), by means of which at least one measurement light individual beam (25i) can be selected which is guided via at least one each of the individual mirrors (21, 23) of the facet mirrors (20, 22). A detection device (28) of the measurement system serves for detecting the at least one measurement light individual beam (25i). A control/regulating device (29) of the measurement system is signal-connected to the tilting actuator devices, the object-field-side measurement light beam selection device (27) and the detection device (28). The result is a measurement system having increased flexibility of use.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

xyxyy), deviates from a circular shape. To specify the illumination pupil (12a), a diffraction behaviour of at least one object structure of the object to be imaged is analysed, a position of the obscuration exit pupil region (38) in the exit pupil (36) is detected, and the illumination pupil (12a) is adapted such that at least one of the variants of the optical system arises. This results in an optical system with an improved resolution.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

sisii) of the intensity sensor device (31). This results in an illumination optical unit which makes it possible to measure a corresponding intensity coordinate dependence precisely and in parallel to a usage mode of the illumination optical unit.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet
• G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière

Abrégé

iiii).

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet
• G06K 1/00 - Méthodes ou dispositions pour marquer les supports d'enregistrement sous la forme numérique
• G06K 19/07 - Supports d'enregistrement avec des marques conductrices, des circuits imprimés ou des éléments de circuit à semi-conducteurs, p. ex. cartes d'identité ou cartes de crédit avec des puces à circuit intégré

Abrégé

An imaging EUV optical unit serves for imaging an object field into an image field. The optical unit has a plurality of mirrors for guiding EUV imaging light at a wavelength shorter than 30 nm along an imaging beam path from the object field to the image field. The plurality of the mirrors includes at least two normal incidence mirrors and at least two grazing incidence mirrors. An overall transmission of the plurality of the mirrors is greater than 10%. This yields an imaging EUV optical unit whose usability for an EUV projection exposure apparatus can be improved.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A facet mirror (6) for an illumination optical unit for projection lithography is suitable for use as first facet mirror such that individual mirror groups of the facet mirror (6), as first facets, are imaged at least into partial fields of an object field of the illumination optical unit with the aid of a transfer optical unit, an object being arrangeable in said object field and being displaced in an object displacement direction (y) through the object field during a projection exposure. The facet mirror (6) has an array arrangement of individual mirror units (26), with each of the individual mirror units (26) being embodied as a sub-array of NxM individual mirrors (21). The facet mirror (6) has at least two pre-tilt types (321, 322) of the individual mirror units (26). A first pre-tilt type (321) has individual mirror units (26) which, in a neutral position, have a first pre-tilt angle relative to a base tilt angle specified by a carrier geometry of the facet mirror (6). A second pre-tilt type (322) has individual mirror units (26) with a second pre-tilt angle. The pre-tilt angles of the different pre-tilt types (321, 322) differ from one another. This yields a facet mirror with relaxed requirements in respect of a tilt actuator system for tilting individual mirrors of the facet mirror.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet
• G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière

Abrégé

An illumination optical unit (11) for projection lithography comprises a transmission facet mirror (6), an illumination specification facet mirror (7), and a monitoring device (28). The latter comprises at least one spatially resolving monitoring sensor (29) and a satellite facet (30) which belongs to the transmission facet mirror (6) and is associated with precisely one monitoring-transmission facet (21). The satellite facet (30) is oriented such that monitoring light (3) from a monitoring light source (2) is guided along a monitoring light channel (31) towards the monitoring sensor (29) via the satellite facet (30) and an illumination specification facet (25) to be monitored which is associated with the monitoring-transmission facet (21). The result is an illumination optical unit for which tilting of illumination specification facets of an illumination specification facet mirror can be effectively monitored.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet
• G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière

Abrégé

A method for driving an actuator for a component of a projection exposure apparatus for semiconductor lithography comprises: characterizing the actuator; parameterizing an actuator model; implementing the actuator model in a control structure; and driving the in actuator using the actuator model.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

The invention relates to a projection exposure apparatus (1, 101) for semiconductor lithography, comprising at least one connecting element (40, 50.1, 50.2, 60.1, 60.2) for connecting two components of the projection exposure apparatus (1, 101), wherein the connecting element (40, 50.1, 50.2, 60.1, 60.2) has at least one first mechanical decoupling element (41, 43, 51, 53.x, 61, 63.x) and at least one second decoupling element (41, 43, 51, 53.x, 61, 63.x). The projection exposure apparatus (1, 101) is distinguished by the fact that the first decoupling element (41, 51, 61) and the second decoupling element (43, 53.x, 63.x) decouple the same portions (86.1, 86.2, 86.3) of the connecting element (40, 50.1, 50.2, 60.1, 60.2) from one another.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet

Abrégé

Techniques are disclosed to obtain microscopic images having high resolution and low distortion. A transformation is applied to a distorted high-resolution image (220). The transformation can be determined based on aggregated low-resolution images.

Classes IPC  ?

• G06V 10/24 - Alignement, centrage, détection de l’orientation ou correction de l’image

Abrégé

The invention relates to a device (1) for releasably connecting at least one mobile clean room (2) to at least one second clean room (3), said device having a first lock part (4) which is designed to at least partially form a closed lock space (5) between the mobile clean room (2) and the second clean room (3), wherein one or more, preferably more than two, particularly preferably exactly three, openable closure units (9) are provided on the first lock part (4) and are designed to sealingly close the lock space (5) off from the respective clean room (2, 3).

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail

Abrégé

A method of operating a control device for controlling and measuring a plurality N of actuators for actuating at least one optical element of an optical system comprises measuring an individual actuator of the N actuators during a specific measurement time interval. The measurement is carried by exciting the individual actuator via an excitation voltage provided by a control unit. A measurement current indicative of a time-dependent current of the actuator excited via the excitation voltage is provided by a current measuring unit. A measurement voltage indicative of a time-dependent voltage of the actuator excited via the excitation voltage is provided by a voltage measuring unit. An impedance measurement result is ascertained based on the provided measurement current and the provided measurement voltage. A deviation indicative of a fault in the control device is determined based on the ascertained impedance measurement result.

Classes IPC  ?

• G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
• G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
• G01R 31/52 - Test pour déceler la présence de courts-circuits, de fuites de courant ou de défauts à la terre
• G02B 26/10 - Systèmes de balayage
• G03F 7/20 - ExpositionAppareillages à cet effet

Abrégé

The present invention relates inter alia to a method of passivating a repair region of a lithography mask, wherein the method comprises a) feeding in a passivation gas and b) directing a particle beam onto a passivation region of the mask, wherein the passivation region has at least one section outside the repair region.

Classes IPC  ?

• G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé
• C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et

Abrégé

The invention relates to a measurement device (1) for measuring a planar inspection object (3), in particular a mirror or an EUV mirror, comprising an inspection-object holding device (5) and a measuring device (7), wherein - the inspection-object holding device (5) has a first inspection-object holder (9.1) on which the inspection object (3) can be disposed, wherein - the measuring device (7) has at least one first measuring apparatus (13.1), in particular a Fizeau interferometer, which is designed and disposed to sense a surface to be measured on the inspection object (3) disposed on the first inspection-object holder (9.1), and wherein - the measuring device (7) can be moved, in particular shifted and/or tilted, relative to the inspection-object holding device (5), characterized in that - the inspection-object holding device (5) has a second inspection-object holder (9.2) which is fixedly connected to the first inspection-object holder (9.1) and on which a reference inspection object (11) can be disposed, and in that - the measuring device (7) has a second measuring apparatus (13.2) which is fixedly connected to the first measuring apparatus (13.1), wherein - the second measuring apparatus (13.2) is designed and disposed to sense an orientation of the measuring device (7) relative to the reference inspection object (11).

Classes IPC  ?

• G01B 5/00 - Dispositions pour la mesure caractérisées par l'utilisation de techniques mécaniques
• G01B 9/02055 - Réduction ou prévention d’erreursTestÉtalonnage
• G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
• G01B 11/26 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes

Abrégé

The invention relates to a micro-electromechanical system (100) comprising at least one element (101) which can be moved in at least one degree of freedom relative to a base structure (102) in a micro-electromechanical manner by means of at least one actuator (103), such as an element which can be used in projection exposure systems for photolithography in particular. The micro-electromechanical system (100) is characterized in that at least one removable fixation (200) is provided which is an integral part of the micro-electromechanical system (100) at least in the starting state and by means of which at least one element (101) is fixed in at least one degree of freedom of the element (101) relative to the base structure (102) and/or another element (101).

Classes IPC  ?

• G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière

Abrégé

RRiiiiaiii) is less than a predetermined threshold value (SW).

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p. ex. quartz

Abrégé

A method for heating an optical element in an optical system, such as in a microlithographic projection exposure system comprises using a thermal manipulator to introduce a heating power into the optical element to produce a thermally induced deformation. Before starting operation of the optical system in which useful light impinges on the optical element, the heating power is adjusted with respect to a desired state of the optical element in which a first optical aberration is at least partially compensated. After starting operation of the optical system, the heating power is regulated to the desired state depending on the heat load of the useful light impinging on the optical element. The heating power is regulated in such a way that the average temperature of the optical element remains constant up to a maximum deviation of 0.5 K.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
• G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,

Abrégé

The invention relates to a projection exposure apparatus (1, 101) for semiconductor lithography comprising an element (40, 50, 70, 90, 120, 140), the element (40, 50, 70, 90, 120, 140) comprising an elastic material The projection exposure apparatus is distinguished by the fact that the element (40, 50, 70, 90, 120, 140) comprises a core region (48, 58, 78, 98, 128, 148) comprising the elastic material, and a cladding region (49, 59, 79, 99, 129, 149) at least partly surrounding said core region, the cladding region (49, 59, 79, 99, 129, 149) comprising at least one barrier layer (81, 141, 143) and the core region (48, 58, 78, 98, 128, 148) comprising an elastomer and/or a thermoplastic.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet

Abrégé

S1S2S1S2out1out2excdetdet) from the interference detection unit and the voltage signals, wherein the interference detection unit is configured to evaluate at least one of the sensor signals when the excitation signal is applied to the sensor by generating a filtered signal by applying a high-pass filter to the one of the sensor signals and/or a combination of the sensor signals, forming a non-negative signal from the filtered signal, applying a window function for weighting areas of the non-negative signal, evaluating the weighted signal in order to detect interference, and generating and providing the interference detection signal on the basis of the detected interference.

Classes IPC  ?

• G01D 3/036 - Dispositions pour la mesure prévues pour les objets particuliers indiqués dans les sous-groupes du présent groupe pour atténuer les influences indésirables, p. ex. température, pression sur les dispositions de mesure elles-mêmes
• G01D 5/24 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la capacité

Abrégé

The present invention relates to a method for repairing a defect of a cap layer of a mask for lithography. The method comprises the step of depositing a deposition material on at least a portion of the cap layer and/ or a multilayer of the mask, such that at least the defect of the cap layer is covered by the deposition material.

Classes IPC  ?

• G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé

Abrégé

A method for operating an ion beam device comprises determining an incidence angle at which an ion beam of the ion beam device hits an upper top surface of a semiconductor sample and a rotation angle for the semiconductor sample around a rotation axis extending perpendicular to the upper top surface. The method also includes rotating the semiconductor sample around the rotation axis by the rotation angle. The method further includes determining a scan angle between an adapted scan line along which the ion beam is moved when hitting the upper top surface and a default scan line of the ion beam extending parallel to the upper top surface of the semiconductor sample. Determining the scan angle is based on the rotation angle and the incidence angle. The scan line is adapted to the adapted scan line based on the determined scan angle.

Classes IPC  ?

• H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
• H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper

Abrégé

The invention relates to a method for determining a position (PL) of a leak (2) on a component (3), comprising: flowing a first gas (8a) into a volume (7) of the component (3) to be tested for a leak (2), which component is arranged in an interior (5) of a vacuum chamber (4), wherein a second gas (8b), which is different from the first gas, is located in the volume (7) to be tested, wherein the first gas (8a) is flowed into the volume (7) to be tested at an overpressure (∆p) in order to compress the second gas (8b) in the volume (7) to be tested; detecting a leakage rate of the first gas (8a) and/or a leakage rate (qL2) of the second gas (8b) which escapes at the leak (2) from the volume (7) to be tested into the interior (5) of the vacuum chamber (4); and determining the position (PL) of the leak (2) on the component (3) on the basis of a curve of the detected leakage rate of the first gas (8a) and/or the detected leakage rate (qL2) of the second gas (8b). The invention also relates to a device (1) for determining a position (PL) of a leak (2) on a component (3).

Classes IPC  ?

• G01M 3/22 - Examen de l'étanchéité des structures ou ouvrages vis-à-vis d'un fluide par utilisation d'un fluide ou en faisant le vide par détection de la présence du fluide à l'emplacement de la fuite en utilisant des révélateurs particuliers, p. ex. teinture, produits fluorescents, produits radioactifs pour tuyaux, câbles ou tubesExamen de l'étanchéité des structures ou ouvrages vis-à-vis d'un fluide par utilisation d'un fluide ou en faisant le vide par détection de la présence du fluide à l'emplacement de la fuite en utilisant des révélateurs particuliers, p. ex. teinture, produits fluorescents, produits radioactifs pour raccords ou étanchéité de tuyauxExamen de l'étanchéité des structures ou ouvrages vis-à-vis d'un fluide par utilisation d'un fluide ou en faisant le vide par détection de la présence du fluide à l'emplacement de la fuite en utilisant des révélateurs particuliers, p. ex. teinture, produits fluorescents, produits radioactifs pour soupapes

Produits et services

3D X-ray inspection and metrology tool in the field of semiconductor measurement and control solutions.

Abrégé

An illumination optical unit is part of a mask inspection system for use with EUV illumination light. A hollow waveguide serves to guide the illumination light. For the illumination light, the hollow waveguide has an entrance opening in an entrance plane and an exit opening in an exit plane. An input coupling mirror optical unit is disposed upstream of the hollow waveguide in the beam path of the illumination light and has at least one mirror for imaging a source region of an EUV light source into the entrance opening of the hollow waveguide. An output coupling mirror optical unit serves to image the exit opening of the hollow waveguide into an illumination field. This yields an illumination optical unit whose use efficiency for the EUV illumination light has been optimized.

Classes IPC  ?

• G03F 1/84 - Inspection
• G01N 21/956 - Inspection de motifs sur la surface d'objets

Abrégé

The invention relates to a method for securing a MEMS micromirror unit (100) in an overarching assembly (200) having at least one receptacle (210) for a MEMS micromirror unit (110), as is used for example in projection exposure apparatuses (1) for photolithography. The invention also relates to a MEMS micromirror unit (100) with an advantageous configuration to this end. The invention is characterized by the steps of: a) introducing the MEMS micromirror unit (100) in the receptacle (210); b) aligning the MEMS micromirror unit (100) vis-à-vis the receptacle (210); c) applying an axial tensile force, which is greater than the subsequent preloading force, to an interface element (120) of the MEMS micromirror unit, whereby this gives rise to a longitudinal extension of the interface element (120); d) securing the preloading element (300) to a predetermined longitudinal position on the interface element (120); and e) reducing and removing the axial tensile force. The preloading element (300) comes into contact with the receptacle (210) no later than during the reduction in the axial tensile force and prevents complete undoing of the longitudinal extension of the interface element (120), as a result of which a preloading force remains on the interface element (120), said preloading force being able to be used to secure the MEMS micromirror unit (100) in the receptacle (210).

Classes IPC  ?

• G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
• B81C 3/00 - Assemblage de dispositifs ou de systèmes à partir de composants qui ont reçu un traitement individuel
• G02B 5/08 - Miroirs
• G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
• G02B 5/09 - Miroirs à facettes multiples ou polygonales
• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A reflective optical element (11), in particular for reflecting EUV radiation (14) includes: a substrate having an optical surface on which a reflective coating (13) is applied. The substrate has a quasi-monocrystalline volume region (8). An associated method for producing the substrate (10) for the optical element (11) includes: introducing a starting material, preferably a metal or a semimetal, into a container and melting the starting material, producing a material body having a quasi-monocrystalline volume region (8) by directionally solidifying the molten starting material proceeding from a plurality of monocrystalline seed plates arranged in the region of a base of the container, and producing the substrate by processing the material body to form an optical surface (12).

Classes IPC  ?

• G02B 5/08 - Miroirs
• C30B 11/14 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger caractérisée par le germe, p. ex. par son orientation cristallographique
• C30B 29/06 - Silicium
• C30B 29/08 - Germanium

Abrégé

A method of operating a projection exposure apparatus for microlithography, comprises: heating an optical element of the projection exposure apparatus by irradiating a surface of the optical element with heating radiation during a break in operation in which the surface of the optical element is not irradiated by exposure radiation. An inhomogeneous temperature distribution which reduces aberrations of the projection exposure apparatus is created on a portion of the surface of the optical element during the heating in the break in operation, with the inhomogeneous temperature distribution being created by irradiating the portion with heating radiation with at least one continuous heating radiation profile formed by a beam shaping element. A related projection exposure apparatus for microlithography is disclosed.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A support structure (46) open on one side for an illumination optical unit (15) of a microlithographic projection exposure apparatus (1) has a frame (46) extending in a longitudinal direction (37), with one or more means for increasing the stiffness of the frame (46), wherein ribs (48) and/or planar stiffening elements (47, 42, 43) serve as stiffening means.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet
• G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs

Abrégé

The present application relates to a method (800, 900) and a device (100) for correcting at least one imaging error of a particle beam (127) during processing of a sample (105). The method (800, 900) comprises the following steps: (a) determining (920) the at least one imaging error of the particle beam (127) after at least one interruption of the processing of the sample (105); and (b) correcting (930) the determined at least one imaging error of the particle beam (127) if it exceeds a specified threshold value.

Classes IPC  ?

• H01J 37/153 - Dispositions électronoptiques ou ionoptiques pour la correction de défauts d'images, p. ex. stigmateurs
• H01J 37/21 - Moyens pour la mise au point
• H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
• H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
• H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions

Abrégé

The invention relates to a computer implemented method for simulating an aerial image of a model of a photolithography mask illuminated by incident electromagnetic waves, the method comprising: obtaining the model of the photolithography mask; simulating the propagation of the incident electromagnetic waves through the model of the photolithography mask using a machine learning model, wherein the machine learning model maps the model of the photolithography mask to a representation of an electromagnetic field generated by the incident electromagnetic waves on the photolithography mask; obtaining the aerial image of the model of the photolithography mask by applying a simulation of an imaging process. The invention also relates to corresponding computer programs, computer-readable media and systems.

Classes IPC  ?

• G06F 30/32 - Conception de circuits au niveau numérique

Abrégé

122. The invention also relates to an optical element (1) processed using one of the methods according to the invention; to an optical system (10), in particular a projection system, for microlithography having such an optical element; to a semiconductor technology plant, in particular a projection printing plant, having such an optical system, in particular a projection system; and to a device for electron irradiation (100), in particular for carrying out the methods according to the invention.

Classes IPC  ?

• G02B 5/08 - Miroirs
• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

The invention relates to a method for producing a MEMS micromirror unit (100) for use in projection lighting systems (1) for photolithography, and to a MEMS micromirror unit (100) produced according to this method. The invention also relates to a system for semiconductor technology with a corresponding MEMS micromirror unit (100) and to an electronic component produced with such a system. The MEMS micromirror unit (100) comprises a MEMS mirror array assembly (110) having a MEMS mirror array structure (111) and a joining structure (115) and an interface element (120) for fixing the MEMS micromirror unit (100) on a higher-level assembly, a joining structure (125) interacting therewith in a form-fitting manner, and at least one stop surface (121, 121'). The production comprises the steps: a) measuring the position and location of the MEMS mirror array structure (111) relative to the joining structure (115); b) adjusting the relative position and/or location of the joining structure (125) of the interface element (120) and the at least one stop surface (121, 121') in such a way that the relative position and location of the MEMS mirror array structure (111) and the at least one stop surface (121, 121'), after joining the MEMS mirror array assembly (110) and the interface element (120) via the joining structures (115, 125), corresponds to a predetermined position and location.

Classes IPC  ?

• G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
• G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs

Abrégé

The invention relates to a computer implemented method for simulating an aerial image of a model of a photolithography mask illuminated by incident electromagnetic waves, the method comprising: obtaining the model of the photolithography mask, the model describing the photolithography mask at least partially in a dimension orthogonal to the mask carrier plane; simulating the propagation of the incident electromagnetic waves through the model of the photolithography mask using a machine learning model, wherein the machine learning model maps the model of the photolithography mask to a representation of an electromagnetic field generated by the incident electromagnetic waves on the photolithography mask; obtaining the aerial image of the model of the photolithography mask by applying a simulation of an imaging process. The invention also relates to corresponding computer programs, computer-readable media and systems.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A measurement arrangement (10; 110, 210; 310) for determining the position of a movable component (526) in a microlithographic optical system (500) comprises: an optical resonator (26) having two resonator mirrors (28, 30) which enclose a resonator cavity (32), and a movable measurement mirror (14) which is assigned to the component and arranged within the resonator cavity for the purpose of directing measurement radiation back and forth between the resonator mirrors. The measurement mirror is arranged at a working distance (34) from one of the resonator mirrors which has a curvature matched to the measurement mirror in such a way that the centre (31) of said curvature is arranged on, or at a distance of no more than 10% of the working distance from, the measurement mirror.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G01B 9/02003 - Interféromètres caractérisés par la commande ou la génération des propriétés intrinsèques du rayonnement utilisant plusieurs fréquences utilisant des fréquences de battement
• G01B 9/02001 - Interféromètres caractérisés par la commande ou la génération des propriétés intrinsèques du rayonnement
• G01B 9/02018 - Interféromètres à passages multiples, p. ex. à double passage
• G01B 9/02017 - Interféromètres caractérisés par la configuration du parcours du faisceau avec plusieurs interactions entre l’objet ciblé et les faisceaux lumineux, p. ex. les réflexions des faisceaux provenant de positions différentes

Abrégé

The invention relates to a vibration-correction unit (100) for an object (101) in a lithography apparatus (600, 700), having a sensor (102), which is connected to the object (101) and comprises an electromagnetic actuator (103) and an auxiliary mass (104), which is connected to at least one coil (106), protruding into a cavity (105) of the electromagnetic actuator (103), and is designed for linear movement along at least one measuring axis (116), wherein the electromagnetic actuator (103) is configured to generate a magnetic flux density in the region of the at least one coil (106), and having a control unit (107), which is configured to sense a measured variable of the coil (106) and to convert it into an acceleration acting on the auxiliary mass (104) along the measuring axis (116), and also having a compensation unit (108), which is configured to exert on the object (101) a counteracting force directed counter to the acceleration determined. The invention also additionally relates to a method for operating a vibration-correction unit (100), to a sensor and to a lithography apparatus having a sensor.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• F16F 15/02 - Suppression des vibrations dans les systèmes non rotatifs, p. ex. dans des systèmes alternatifsSuppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif

Abrégé

A method of operating a microlithographic projection exposure apparatus (10) is described. The exposure apparatus comprises a mask holder (20) for holding a mask (18), a substrate holder (26) for holding a substrate (24), a projection lens (30) having several optical elements (R1 - R4) for imaging mask structures of the mask onto the substrate and a manipulator system (34), wherein the optical elements, the mask holder and the substrate holder each are an optical path element in an exposure optical path of the projection exposure apparatus and the manipulator system is configured for adjusting several travels, defined by travel variables (68), at the optical path elements of the projection lens. The method comprises the following steps: providing a wave front deviation (50) of the projection lens, and determining a control command (42) comprising travels for the manipulator system for correcting the wave front deviation using a model (60). The model describes the wave front deviation as a function of the travel variables and for this comprises a group of offset coefficients (62), which are independent of the travel variables, a group of linear coefficients (64), which are each attributed to one of the travel variables to the power of one, and a group of quadratic coefficients (66), which are each attributed to a product of two of the travel variables or to a square of one of the travel variables. The offset coefficients (62) are calibrated more frequently than the linear coefficients (64).

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet

Abrégé

The invention relates to a handling system for microlithographic photomasks, having an articulated arm robot and having an alignment device. The alignment device is designed to rotate a photomask held by the alignment device about a vertical axis during a first movement process and flip said photomask about a horizontal axis during a second movement process. The invention also relates to an inspection system having a handling system and to a processing system having a handling system.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G03F 1/84 - Inspection

Abrégé

The invention relates to a lithography system, in particular an EUV lithography system, said lithography system comprising: a radiation source for generating useful radiation (16); a preferably reflective optical element (M1) having a surface (25a) designed to be exposed to the useful radiation (16); and a measurement device (26) for measuring a heat input, in particular a temperature (TM), at the surface (25a) of the optical element (M1), which measurement device has a detection device (27) for detecting radiation (28) emitted from the surface (25a) of the optical element (M1), and a lock-in amplifier (30). The lithography system comprises a heating device (39) having at least one heating unit (38a, b) for directing heating radiation (37a, b) onto the surface (25a) of the optical element (M1). The heating device (39) is designed to modulate the heating radiation (37a, b), that is directed by the heating unit (38a, b) onto the surface (25a) of the optical element (M1), in a preferably timed, in particular pulsed, manner.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet
• G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs

Abrégé

An ion beam system capable of providing increased secondary electron yield is provided. The increase of a secondary electron yield can be achieved by utilizing, during ion beam scanning, a combination of at least two individual gases adapted to material compositions present in a semiconductor wafer or lithography mask. The system and method can be used, for example, for inspection, circuit edit or repair of semiconductor wafers or lithography masks.

Classes IPC  ?

• H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
• H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
• H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
• H01L 21/263 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée

Abrégé

An optical system for a lithography apparatus has an arrangement comprising a printed circuit board having at least one flexible region in which a flexible component comprising an integrated circuit is arranged.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet
• H05K 1/02 - Circuits imprimés Détails
• H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés

Abrégé

An illumination system for a microlithography projection illumination facility for illuminating a sample arranged in a region of an object plane of a downstream projection lens with illumination light generated from light from a primary light source is a double-field illumination system for receiving a single light beam coming from the primary light source and generating therefrom two illumination beams. A first illumination beam is guided along a first illumination beam path to a first illumination field outside the optical axis of the projection lens in the exit plane of the illumination system. At the same time, a second illumination beam is guided along a second illumination beam path to a second illumination field opposite the first illumination field relative to the optical axis and outside the optical axis in the exit plane.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A mirror, in particular for a microlithographic projection exposure system, having an active optical surface, a reflective layer system for reflecting electromagnetic radiation of a working wavelength which is incident on the active optical surface, a mirror substrate (105, 205, 305) which is made of a mirror substrate material and in which structures (106, 206, 306) are arranged that differ from the surrounding mirror substrate material in terms of the refractive index, and a layer stack which is located between the mirror substrate (105, 205, 305) and the reflective layer system. The layer stack has an absorber layer (110, 210, 310) an AR layer (120, 220, 320) and a smoothing layer (130, 230, 330) one after the other in a stacking direction running from the mirror substrate (105, 205, 305) to the reflective layer system.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

A catadioptric projection objective for reproducing a pattern arranged in an object plane of the projection objective in an image plane of the projection objective parallel to the object plane comprises a plurality of optical elements comprises lenses and concave mirrors arranged between the object plane and the image plane along an optical axis. The projection objective is a double-field projection objective to reproduce a first effective object field outside the optical axis in the object plane along a first projection beam path in a first effective image field outside the optical axis in the image plane and at the same time to reproduce a second effective object field, opposite the first object field in relation 10 to the first optical axis, outside the optical axis in the object plane along a second projection beam path in a second effective image field outside the optical axis in the image plane.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G02B 17/08 - Systèmes catadioptriques

Abrégé

The invention relates to a method for reworking an optical element, in particular for microlithography, wherein the optical element has a first functional layer (203) which is optionally located on a figure individualised by way of figure processing for use in a first optical system or on an existing carrier layer (202), the method having the following steps: over-coating the first functional layer (203) with an adjustment layer system (204), applying a carrier layer (205) onto the adjustment layer system (204), determining a wavefront effect desired for a new use of the optical element, carrying out a layer manipulation depending on the desired wavefront effect and applying a second functional layer (206) onto the carrier layer (205), wherein the optical element (200) is a lens or a wavefront correction element.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G02B 13/14 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous à utiliser avec des radiations infrarouges ou ultraviolettes
• G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,

Abrégé

An optical element for incorporation into a holding device for forming an assembly for constructing an optical system comprises a body transparent to light from a used wavelength range, on which a first light passage surface and an opposing second light passage surface are formed. Each light passage surface has an optical used region for arrangement in a used beam path of the optical system and an edge region outside the optical used region and designated as an engagement region for holding elements of the holding device. Each light passage surface is of optical quality in the optical used region and has a surface shape designed in accordance with a used region specification specified by the function of the optical element in the used beam path. Light deflection structures with a geometrically defined surface design are in the edge region of at least one of the light passage surfaces.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G02B 5/18 - Grilles de diffraction
• G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,

Abrégé

A method comprises: providing FIB and CPB columns with FIB and CPB optical axes coinciding at a wafer surface; in the coincidence arrangement, removing a cross section surface layer of a measurement site of a wafer using the FIB column to make a new cross section accessible for imaging; reducing a working distance between the CPB imaging column and the wafer surface in a direction along the axis of the CPB imaging column; imaging the new cross section at the measurement site of the wafer with the CPB imaging column at the reduced working distance and thus not in the coincidence arrangement; and increasing the working distance between the CPB imaging column and the wafer surface in the direction along the axis of the CPB imaging column until the coincidence arrangement is reached.

Classes IPC  ?

• H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
• H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
• H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
• H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
• H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
• H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper

Abrégé

The invention relates to an optical system for microlithography, in particular a projection objective, comprising: an optical element (128), a manipulator (24) for moving the optical element (128), and at least one sensor (18) for detecting a movement, in particular for detecting a position, of the optical element (128). The sensor (18) is attached to a sensor adapter (12) which has a sensor housing (16) which is installed in the optical system by means of a releasable connection. The invention also relates to a sensor adapter (12) for an optical system for microlithography, in particular for an optical system designed as described above. The sensor adapter (12) comprises a sensor (18) for detecting a movement, in particular for detecting a position, of an optical element (128) and has a sensor housing (16) which is designed for installation in the optical system by means of a releasable connection.

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet
• G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles

Abrégé

The invention relates to a securing device (24) for securing a functional component (25) to a substrate body (26), comprising a functional component (25) which can be inserted into a receiving area (27) of the substrate body (26) and a securing component (28) with at least two clamping elements (29) for producing a form-fitting connection between the functional component (25) and the substrate body (26).

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

resresresresuwVTxzATxzuwVTxzATxzATxz).

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

To measure an effect of a wavelength-dependent measuring light reflectivity RRet of a lithography mask, a measuring light beam is caused to impinge on said lithography mask within a field of view of a measuring apparatus. The measuring light has a wavelength bandwidth between a wavelength lower limit and a wavelength upper limit differing therefrom. The reflected measuring light emanating from an impinged section of the lithography mask is captured by a detector. A filter with a wavelength-dependent transmission within the wavelength bandwidth is introduced into a beam path of the measuring light beam between the measuring light source and the detector. The measuring light reflected by the lithography mask is captured again by the detector once the filter has been introduced. The wavelength-dependent reflectivity RRet or an effect of the wavelength-dependent reflectivity RRet is determined on the basis of the capture results. In comparison with the prior art, this yields an improved method for measuring an effect of a measuring light reflectivity on a lithography mask. Additionally, a method for measuring an effect of a polarization of measuring light on a measuring light impingement on a lithography mask is specified, wherein as a result of this the effect of the lithography mask on measuring light is made accessible in respect of further optical parameters of a measurement.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G01N 21/21 - Propriétés affectant la polarisation
• G01N 21/55 - Réflexion spéculaire
• G01N 21/956 - Inspection de motifs sur la surface d'objets

Abrégé

An optical system comprising an EUV mirror, wherein the EUV mirror is provided with an optical surface designed for the reflection of EUV radiation. An EUV beam path generated by an EUV radiation source is directed at the optical surface of the EUV mirror, such that the EUV beam path is incident on the EUV mirror at an angle of not more than 12°. The optical surface is covered with a carbon layer, wherein the carbon layer has a thickness of at least 8 nm. The invention also relates to a method for operating an optical system.

Classes IPC  ?

• G02B 5/08 - Miroirs

Abrégé

The invention relates to a computer implemented method for defect detection, the method comprises: obtaining a first imaging dataset of a portion of an object comprising integrated circuit patterns; obtaining at least a second imaging dataset and a third imaging dataset comprising predominantly the same integrated circuit patterns as the portion of the object; and jointly processing at least the first imaging dataset, the second imaging dataset and the third imaging dataset to detect defects. The invention also relates to a corresponding computer program, computer-readable medium and system for defect detection.

Classes IPC  ?

• G06T 7/00 - Analyse d'image

Abrégé

The invention relates to an optical system (200) for a projection exposure system (1A, 1B), having an optical assembly (100) with an optical element (108), a manipulator frame (202) which supports the optical assembly (100), and a clamping assembly (212, 212A, 212B, 212C, 212D, 212E, 212F, 212G, 214, 216) which is attached to the manipulator frame (202) and which can be brought from a closed state (Z20), in which the clamping assembly (212, 212A, 212B, 212C, 212D, 212E, 212F, 212G, 214, 216) produces a mechanical connection between the optical assembly (100) and the manipulator frame (202), into an open state (Z10), in which the mechanical connection between the optical assembly (100) and the manipulator frame (202) is released, and vice versa, wherein the clamping assembly (212A) has a contact element (250) which is connected to the optical element (108), a groove element (238) which is connected to the manipulator frame (202) and on which the contact element (250) rests, and a locking unit (262) for mechanically connecting the contact element (250) to the groove element (238) in the closed state (Z20) of the clamping assembly (212A); or the contact element (250) is connected to the manipulator frame (202), and the groove element (238) is connected to the optical element (108). The contact element (250) has a spherical cap-shaped contact section (252), and the groove element (238) has a V-shaped groove (242) with two contact surfaces (244, 246) which are oriented diagonally relative to each other. The contact section (252) rests on the contact surfaces (244, 246), or the contact element (250) and the groove element (238) rest against each other at a surface contact or at a tetrahedron-shaped contact. The locking unit (262) has a locking element (266) and a drive element (264) for driving the locking element (266), and the drive element (264) is designed to bring the locking element (266) from a locking state (Z1), in which the locking element (266) engages behind the contact element (250) in order to produce a form-fitting connection between the locking element (266) and the contact element (250), into an unlocking state (Z2), in which the form-fitting connection between the locking element (266) and the contact element (250) is released, and vice versa.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs

Abrégé

Various examples of the disclosure relate to the measurement of the tilt and/or height of a sample to be examined in the case of particle microscope systems, especially electron beam microscopes having an additional column for creating a focused ion beam. Optical detection systems are used, for example according to the autocollimation principle.

Classes IPC  ?

• H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
• H01J 37/26 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions
• H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
• H01J 37/244 - DétecteursComposants ou circuits associés

Abrégé

A method of calibrating an illumination system for a lithographic system, the method comprising: applying a known misalignment to the illumination system; obtaining measured data representative of a measured illumination pupil generated by the illumination system; and determining an actual misalignment based on the measured data. The determining an actual misalignment may comprise: obtaining estimated data representative of an estimated illumination pupil generated by the illumination system including the known misalignment and calculating a difference between the estimated data and the measured data, wherein the calculated difference is representative of the actual misalignment.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Produits et services

Applications and instruments in the field of semiconductor measurement and inspection solutions (term considered too vague by the International Bureau pursuant to Rule 13 (2) (b) of the Regulations).

Abrégé

The invention relates to an assembly (30) for semiconductor technology, comprising a module (32) and a module frame (33). The module (32) is connected to the module frame (33) via a bearing element (34) and is positioned by the bearing element (34) relative to the module frame (33). The connection (35) comprises a clamping device (56, 58) which prevents the module (32) from being removed from the module frame (33). According to the invention, the bearing element (34) has a clamping force element (50) for transmitting a clamping force produced by the clamping device (56, 58) and a positioning element (60) for positioning the module (32) relative to the module frame (33). The invention additionally relates to a projection exposure system (1, 101) and a mask inspection device comprising an assembly according to the invention.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour prismesMontures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs

Abrégé

A method of determining field-dependent aberrations in an image field of an optical imaging system based on a measuring operation determining aberration data for a plurality of field points in the image field comprises the following steps: - defining a target grid comprising a plurality of target field points in the image field, wherein a target field point is a field point for which a level of aberration is to be determined; - defining a measuring grid comprising a first subset of the target field points comprising all field points for which a level of aberration is to be determined in a measuring operation; - measuring aberrations at all field points of the measuring grid to generate measured aberration data; - defining an auxiliary grid comprising a second subset of the target field points comprising selected target field points not included in the measuring grid for which a level of aberration is to be determined in an aberration data generating operation, wherein the aberration data generating operation is configured to generate aberration data for target field points of the auxiliary grit based on (iii) knowledge of the optical imaging system and (iv) potential system-specific sources of aberrations.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G01M 11/02 - Test des propriétés optiques

Abrégé

Disclosed is a mask inspection device for photomasks of EUV lithography. The mask inspection device comprises here a receiving device for a photomask, a light source for illuminating the photomask with an illumination beam, and a detection unit for recording at least regions of the photomask. Furthermore, the mask inspection device comprises at least one beam-shaping element for adapting the illumination beam and at least one stop in the light path between the photomask and the detection unit. The at least one beam-shaping element and the at least one stop are arranged in a fixed spatial relationship to one another on a common carrier element. Also disclosed is the corresponding carrier element.

Classes IPC  ?

• G03F 1/84 - Inspection
• G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

The invention relates to a computer implemented method for defect detection in an object comprising integrated circuit patterns comprising: obtaining an imaging dataset and a reference dataset of the object; generating an input representation of a subset of the imaging dataset and a reference representation of a corresponding subset of the reference dataset in a feature space; and detecting defects in the object by comparing the input representation to the reference representation in the feature space. The invention also relates to a corresponding computer-readable medium, computer program product and system for defect detection.

Classes IPC  ?

• G06T 7/00 - Analyse d'image

Abrégé

The invention relates to a computer implemented method for defect detection in an imaging dataset of an object comprising integrated circuit patterns, the method comprising: obtaining defect candidates in the imaging dataset; subsequently carrying out at least two stages, each stage comprising the following steps: applying a stage specific defect detection method to the defect candidates; discarding defect-free defect candidates; obtaining detected defects in the imaging dataset from the remaining defect candidates. The invention also relates to a corresponding computer-readable medium, computer program and system.

Classes IPC  ?

• G06T 7/00 - Analyse d'image
• G06V 10/25 - Détermination d’une région d’intérêt [ROI] ou d’un volume d’intérêt [VOI]

Abrégé

An actuator for semiconductor lithography comprises an actuator element, a compensation element and a connection element. The actuator element has a first coefficient of thermal expansion and a connection site at its first end for the active adjustment of an optical element along at least one adjustment axis. The compensation element has a second coefficient of thermal expansion. The sign of the second coefficient of thermal expansion corresponds to the sign of the first coefficient of thermal expansion. The compensation element is oriented coaxially in relation to the adjustment axis. The compensation element has a coupling site held stationary in space or stationary in relation to the optical element. The connection element connects the actuator element and the compensation element at positions located remote from the connection site and from the coupling site. A deformation mirror includes a mirror substrate and an actuator.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

An illumination optical unit for projection lithography illuminates an object field of a downstream imaging optical unit with illumination light from an EUV light source. A first facet mirror has a plurality of adjacently arranged first facets for specifying partial fields which are transferred into partial sections of the object field using the illumination optical unit. A further facet mirror disposed downstream of the first facet mirror has a plurality of adjacently arranged, individually tiltable further facets. The two facet mirrors serve for reflective, at least partially overlaid guidance of component beams of an overall beam of the illumination light via at least one of the first facets and via at least one of the further facets. A curved transfer mirror is disposed downstream of the further facet mirror and serves for the beam-shaping transfer of the overall beam of the illumination light into the object field.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

The invention relates to a method for defect detection comprising: acquiring an imaging dataset of an object comprising integrated circuit patterns using an imaging system; obtaining a reference dataset corresponding to the acquired imaging dataset; generating an enhanced imaging dataset by filtering the acquired imaging dataset with one or more learned filters, wherein the one or more learned filters are obtained by solving an optimization problem comprising the deviation of the enhanced imaging dataset from the reference dataset; and detecting defects in the acquired imaging dataset by comparing the enhanced imaging dataset to the corresponding reference dataset. The invention also relates to a corresponding computer program, a computer-readable medium and a system for defect detection in objects comprising integrated circuit patterns.

Classes IPC  ?

• G06T 5/70 - DébruitageLissage
• G06T 5/20 - Amélioration ou restauration d'image utilisant des opérateurs locaux
• G06T 5/60 - Amélioration ou restauration d'image utilisant l’apprentissage automatique, p. ex. les réseaux neuronaux
• G06T 7/00 - Analyse d'image

Abrégé

A method for characterizing a lithography apparatus, in particular, a method for characterizing a lithography apparatus configured to cause an obscuration of radiation, as well as a lithography apparatus and a computer program product configured to carry out the methods. A method for characterizing a lithography apparatus; detecting first diffracted radiation of the lithography apparatus, wherein the first diffracted radiation was diffracted at a characterization element; determining a diffraction property of the characterization element based on at least in part the first substantially undiffracted radiation and the first diffracted radiation.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

To measure an illumination angle distribution, which is established via a multiplicity of illumination channels of an illumination optics unit, on an object field via an obscured projection optics unit, a setpoint pupil lighting of an illumination pupil of the illumination optics unit is initially established. With the aid of the setpoint pupil lighting, whether splitting of a measurement pupil lighting into a reflection measurement pupil and a diffraction measurement pupil is desired is checked. Depending on the result of the check, a reflection measurement pupil lighting and/or a diffraction measurement pupil lighting of the illumination optics unit is established by establishing corresponding illumination channels. The reflection measurement pupil lighting is measured by inserting a reflective object into the object field and/or the diffraction measurement pupil lighting is measured by inserting a diffractive object into the object field. An actual pupil lighting is reconstructed from the measurement data.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet

Abrégé

An optical component (100, 200) for a lithography apparatus (1) includes an optical element (102, 202), produced from a first material (G102) and having an optically effective surface (106, 206); and a carrying element (104, 204), produced from a second material (G104) and carrying the optical element (102, 202). The second material (G104) differs from the first material (G102) and a ratio of the densities of the first and second materials (G102, G104) deviates from 1 by less than 20%, preferably by less than 10% or even less than 5%. The optical element and the carrying element each have principal extension planes (H102, H202, H104, H204) having maximum extents. The maximum extent (D102, A202) of the optical element (102, 202) is less than 90%, preferably less than 80% or even less than 75% of the maximum extent (A104, D204) of the carrying element.

Classes IPC  ?

• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
• G03F 7/20 - ExpositionAppareillages à cet effet

Abrégé

The invention relates to a method (68) for obtaining measurements of semiconductor structures (18) from a single wedge cut (34) of an inspection volume (10), the method (68) comprising: obtaining the wedge cut (34) by exposing a cross-section surface in the inspection volume (10) by milling into the inspection volume (10) with a FIB column (46) arranged under a slant angle GF, and imaging the cross-section surface with a charged particle beam imaging system (50); determining positions of cross-section features (72) of semiconductor structures (18) in the wedge cut (34); determining reference positions of the cross-section features (72) from at least one reference image (76) of the semiconductor structures (18); obtaining the one or more measurements of the semiconductor structures (18) using lateral displacements (74) between the positions of the cross-section features (72) and the reference positions (78).

Classes IPC  ?

• G06T 7/00 - Analyse d'image

Abrégé

A drive device (100) for driving a plurality N of actuator elements (210) for actuating optical elements (310) of an optical system (4, 10), comprising: N driver stages (110-130) controlled by way of a time multiplex signal (ZMD, ZMA) determined by a time multiplexing scheme (Z), wherein the respective driver stage (110-130) of the N driver stages (110-130) is assigned to one of the N actuator elements (210) and a specific time slot (Z1-Z3) of the time multiplex signal (ZMD, ZMA), and has an amplifier (V) that is configured to amplify a signal component of the assigned time slot (Z1-Z3) of the time multiplex signal (ZMD, ZMA) so as to form a drive voltage (U1-U3) for driving the assigned actuator element (210), with N≥2, and a control loop (400), the feedback branch (410) of which has a voltage divider (420) that is able to be connected selectively to one of the N driver stages (110-130) based on the time multiplexing scheme (Z).

Classes IPC  ?

• G03F 7/20 - ExpositionAppareillages à cet effet

Abrégé

A drive device (100) for driving at least one actuator (200) for actuating an optical element (310) of an optical system (300), comprising an end stage (110) which is configured to boost an input voltage (V1) using a quiescent current (I1) of the end stage (110) to a drive voltage (V2) for the actuator (200), and a supply device (120) which is configured to adjust the quiescent current (I1) for the end stage (110) depending on at least one parameter (E1, E2, E3, E4) that is indicative of the power loss in the optical system (300).

Classes IPC  ?

• G02B 5/08 - Miroirs
• H02N 2/06 - Circuits d'entraînementDispositions pour la commande
• G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
• H02M 1/00 - Détails d'appareils pour transformation
• H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
• H03F 3/217 - Amplificateurs de puissance de classe DAmplificateurs à commutation
• G03F 7/20 - ExpositionAppareillages à cet effet

Abrégé

Disclosed is a method for determining a location of an object surface (16) in relation to a target location in a measuring device for semiconductor technology, the location being determined on the basis of at least two measured values which represent the location, wherein the determination of the location comprises a probability analysis.

Classes IPC  ?

• G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p. ex. automatique
• G02B 7/36 - Systèmes pour la génération automatique de signaux de mise au point utilisant des techniques liées à la netteté de l'image