According to one embodiment, a semiconductor device has a substrate with an upper face and a lower face. The substrate includes a first end portion near a first edge and a second end portion near a second edge. An element region is between the first end portion and the second end portion. A first ridge portion protrudes from a first portion of the substrate that is between the first end portion and the element portion. The first ridge portion is on the lower face. A second ridge portion protrudes from a second portion of the substrate that is between the second end portion and the element portion in the second direction. The second ridge portion is on the lower face.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 21/784 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs qui consistent chacun en un seul élément de circuit le substrat étant un corps semi-conducteur
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A disk device according to an embodiment includes a first suspension and a second suspension. The first suspension has a first base plate mounted to the arm. The second suspension has a second base plate mounted to the arm. The arm with a through-hole includes a first surface, a second surface, and an inner surface. The through-hole is open to the first surface and the second surface. The inner surface defines the through-hole. The first base plate includes a first boss accommodated in the through-hole in contact with the inner surface. The second base plate includes a second boss accommodated in the through-hole in contact with the inner surface. The second boss is at least partly held between the inner surface and the first boss.
According to one embodiment, a connector includes a housing and a plurality of leads. The housing has a first surface and a second surface opposite the first surface. The housing is provided with a through hole opening to the first surface and the second surface. Each of the plurality of leads includes a first terminal accommodated in the through hole.
An insulating member includes a fixed charge. The insulating member includes a first insulating part. The first insulating part includes a first region, a second region, and a third region. The first region is positioned between a gate electrode and the second region in a first direction. The second region is positioned between the first region and the third region in the first direction. The third region is positioned between the second region and a second surface in the first direction. A density of the fixed charge is greater in the first region than in the second region.
According to one embodiment, a method of adjusting a heat assisted magnetic recording and reproducing device maintains a heat assisted magnetic recording head of the heat assisted magnetic recording and reproducing device in an on-track state, maintains a recording current for data recording below a threshold value, and applies a light source drive current emitting light to a light source.
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p. ex. pour compenser les irrégularités de surface ou pour suivre les pistes du support pour suivre les pistes d'un disque
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
According to one embodiment, a semiconductor device includes: a first substrate; a first transistor provided on the first substrate; a light receiving element; and a light emitting element provided on the light receiving element, wherein the first substrate, the first transistor, the light emitting element, and the light receiving element are disposed sequentially in a first direction.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
According to one embodiment, a connector includes a housing, a plurality of first leads, and a metal component. The first leads are attached to the housing in alignment with each other in a first direction. Each of the first leads includes a first external terminal outside the housing. The metal component is provided with a first opening and is attached to the housing. The metal component includes two first junction terminals being aligned with the first external terminals of the first leads in the first direction outside the housing. The first opening is located in-between the two first junction terminals.
According to one embodiment, a controller of a magnetic disk device calculates a first power amount that is an amount of power required for an unload operation of a magnetic head based on a state of a VCM while the VCM is operating. The controller calculates a first set value based on the first power amount. When an amount of second data that is first data stored in a volatile memory and not yet written to a magnetic disk exceeds the first set value, the controller executes a first write operation of writing a part or all of the second data to the magnetic disk. When supply of power from outside is interrupted, the controller executes the unload operation and saving of the second data to a nonvolatile memory by using power generated by a back electromotive force of the second motor.
H02P 6/182 - Dispositions de circuits pour détecter la position sans éléments séparés pour détecter la position utilisant la force contre-électromotrice dans les enroulements
H02P 21/18 - Estimation de la position ou de la vitesse
According to one embodiment, in a disk device, a controller, when the rotation waiting time is present, increases an absolute value of a motor current in a fourth section in a second period in which a head is accelerated or decelerated, changes the absolute value of the motor current at a third average change rate in a fifth section after the fourth section in the second period, decreases the absolute value of the motor current at a fourth average change rate steeper than the third average change rate in a sixth section after the fifth section in the second period, and decreases the absolute value of the motor current at a fifth average change rate steeper than the fourth average change rate in a seventh section after the sixth section in the second period.
According to one embodiment, a magnetic recording device includes a magnetic head and a magnetic recording medium. The magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first magnetic pole and the second magnetic pole. The magnetic element includes a first magnetic layer, and a second magnetic layer provided between the first magnetic layer and the second magnetic pole. The magnetic element includes a midpoint between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic pole to the second magnetic pole.
G11B 5/127 - Structure ou fabrication des têtes, p. ex. têtes à variation d'induction
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
A disk device according to one embodiment includes a magnetic disk, a magnetic head, a piezoelectric element, a flexure, a first bond, and a second bond. The piezoelectric element includes a first piezoelectric body, a first electrode and a second electrode on a first surface of the first piezoelectric body, and a third electrode on a second surface of the piezoelectric body. The third electrode is connected to the second electrode. A first pad and a second pad are disposed on an outer surface of the flexure. A first through hole is open to a part of the first pad. The first electrode and the third electrode overlap with the part. The first bond joins the first pad and the first electrode together and is partly accommodated in the first through hole. The second bond joins the second pad and the second electrode together.
According to one embodiment, a semiconductor device includes a first substrate, a second substrate, a chip, and a spacer. The second substrate is provided to face the first substrate. The chip is provided on the first substrate and between the first substrate and the second substrate. The spacer is provided on the chip and couples the chip and the second substrate. The spacer has a first portion in contact with the chip and a second portion in contact with the second substrate. The second portion is larger in area than the first portion.
H01L 23/24 - Matériaux de remplissage caractérisés par le matériau ou par ses propriétes physiques ou chimiques, ou par sa disposition à l'intérieur du dispositif complet solide ou à l'état de gel, à la température normale de fonctionnement du dispositif
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
According to one embodiment, a semiconductor device includes a first insulated circuit board, a second insulated circuit board, a first semiconductor chip and a first spacer. The first insulated circuit board includes a first conductive plate. The first conductive plate has a first conductive pattern. The first spacer is placed on the first conductive pattern. The first conductive pattern has a first side, a second side, a third side and a fourth side which surround the first spacer. The first side extends in a first direction. The second side continues to the first side and extends in a second direction that is orthogonal to the first direction. The third side continues to the second side and extends in the first direction. The fourth side continues to the third side and extends obliquely to the first direction and the second direction.
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H05K 1/14 - Association structurale de plusieurs circuits imprimés
According to one embodiment, a disk device includes a magnetic disk, a magnetic head, a flexure, a piezoelectric element, a first bonding material, a second bonding material, and a protrusion. The flexure includes a first outer surface, a first pad, and a second pad. The first pad and the second pad are on the first outer surface. The piezoelectric element includes a second outer surface, a first electrode, and a second outer surface. The first electrode and the second electrode are on the second outer surface. The first bonding material, which is conductive, bonds the first pad and the first electrode. The second bonding material, which is conductive, bonds the second pad and the second electrode. The protrusion is provided on the flexure, is located at least partially between the first bonding material and the second bonding material, and protrudes from the first outer surface.
A computer-implemented method for preparing a disk for a disk drive for operation includes: writing first and second servo information in a first portion of a servo sector for a track of the disk; writing third and fourth servo information in a second portion of the servo sector; in a single revolution of the disk, reading a first signal associated with the first servo information, a second signal associated with the second servo information, a third signal associated with the third servo information, and a fourth signal associated with the fourth servo information; based on the first signal, the second signal, the third signal, and the fourth signal, determining a repeatable runout value for the servo sector; and storing the repeatable runout value for the servo sector in a location that is accessed during operation and used during the operation as a repeatable runout correction factor for the track.
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p. ex. pour compenser les irrégularités de surface ou pour suivre les pistes du support pour suivre les pistes d'un disque
According to an embodiment, a controller of a magnetic disk apparatus moves a magnetic head to a first track being one of tracks on a magnetic disk. The controller acquires, in a servo sampling cycle, a positioning error amount of the magnetic head with respect to the first track. The controller executes an access to the first track by the magnetic head after a positioning error amount equal to or less than a first threshold is continuously acquired a first set number of times. The controller obtains a frequency estimation value by estimating a frequency of residual vibration of the magnetic head due to movement of the magnetic head to the first track and obtains an amplitude estimation value by estimating an amplitude of the residual vibration. The controller updates the first set number of times on the basis of the frequency estimation value and the amplitude estimation value.
G11B 33/08 - Isolation ou absorption des sons ou des vibrations indésirables
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p. ex. pour compenser les irrégularités de surface ou pour suivre les pistes du support pour suivre les pistes d'un disque
An isolator includes a substrate; a first planar coil provided above the substrate and along a surface of the substrate; a first insulating portion on the first planar coil; a second planar coil on the first insulating portion; and a metal layer above the first insulating portion. The first planar coil, the second planar coil, and the metal layer are arranged in a first direction perpendicular to the surface of the substrate. The first planar coil and the second planar coil each having a center and an outer perimeter in a second direction along the surface of the substrate. A distance in the second direction from the center of the first planar coil to the outer perimeter of the first planar coil is less than a distance in the second direction from the center of the second planar coil to the outer perimeter of the second planar coil.
An embodiment provides a motor drive device including: a power conversion circuit having a configuration in which a plurality of arms including a series circuit of positive and negative semiconductor switching elements are connected in parallel to each other and configured to drive a motor; a controller configured to generate and output on/off signals for each of the semiconductor switching elements constituting the power conversion circuit by PWM control; a current detection unit configured to detect a current flowing through the power conversion circuit; a current limit unit configured to stop an operation of the controller when the current reaches a threshold; and a position estimation unit configured to estimate a rotational position of the motor using a motor current and a motor voltage, the position estimation unit being configured to correct the motor voltage used for estimation of the rotational position in a carrier cycle of the PWM control in which the operation of the controller is stopped.
H02P 21/24 - Commande par vecteur sans utilisation de détecteurs de position ou de vitesse du rotor
H02P 21/22 - Commande du courant, p. ex. en utilisant une boucle de commande
H02P 25/03 - Moteurs synchrones avec excitation sans balai
H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p. ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions
According to one embodiment, a wireless communication device includes a receiver, a controller and a transmitter. The receiver receives a terminal identifier of a first terminal being a target for downlink frequency multiplexing transmission from another wireless communication device, and receives information identifying, of a plurality of frequency components, a first frequency component allocated to the first terminal. The controller selects, of a plurality second terminals belonging to the wireless communication device, a second terminal having a terminal identifier same as that of the first terminal and allocates the first frequency component to the selected second terminal. The transmitter transmits a header at a band including the plurality of frequency components, the header including the terminal identifier of the selected second terminal in a first field corresponding to the first frequency component, and transmits a first frame addressed to the selected second terminal via the first frequency component.
H04L 5/00 - Dispositions destinées à permettre l'usage multiple de la voie de transmission
H04B 7/0452 - Systèmes MIMO à plusieurs utilisateurs
H04B 7/06 - Systèmes de diversitéSystèmes à plusieurs antennes, c.-à-d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
H04W 72/044 - Affectation de ressources sans fil sur la base du type de ressources affectées
H04W 72/27 - Canaux de commande ou signalisation pour la gestion des ressources entre points d’accès
H04W 84/12 - Réseaux locaux sans fil [WLAN Wireless Local Area Network]
The trench structure part includes a field plate electrode, a first insulating film, a second insulating film, the second insulating film extending to be more proximate to the first surface than the first insulating film, a gate electrode including a first portion located on the second insulating film, and a second portion located on the first insulating film, the second portion being thicker than the first portion, and a third insulating film. The gate contact part extends from the gate wiring layer toward the second portion and contacts the second portion. The gate contact part is not positioned between the first portion and the gate wiring layer. The first portion is positioned adjacent, in a second direction orthogonal to the first direction, to a lower end portion of the gate contact part contacting the second portion.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
21.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
The gate electrode includes a first side surface portion facing a region of a side surface of a mesa part, a second side surface portion positioned at a side opposite to the first side surface portion, a bottom portion oblique to the first and second side surface portions, the bottom portion connecting the first side surface portion and the second side surface portion, a first corner portion positioned between the first side surface portion and the bottom portion, and a second corner portion positioned between the second side surface portion and the bottom portion. An angle between a first straight line and a second straight line is not more than 60°. The first straight line is a straight line extending in a first direction and passing through the first corner portion. The second straight line is a straight line passing through the first and second corner portions.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
According to one embodiment, a magnetic disk device includes a base having a pedestal, a magnetic disk, an actuator that supports and drives a head, and a ramp that is provided on the pedestal and holds the head in an unloading position. The pedestal has a first face, a first hole provided in the first face, a support sleeve disposed on the first face and coaxial with the screw hole, and a recess provided in the support sleeve. The ramp has a guide face that supports the head, a second face opposing the first face, a second hole opened in the second face and configured to receive the support sleeve, and a protrusion that engages with the recess and regulates a pivoting of the ramp around the support sleeve, and is fixed to the pedestal using a fastener that is passed through the second hold and into the first hole.
G11B 5/48 - Disposition ou montage des têtes par rapport aux supports d'enregistrement
G11B 5/54 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour amener la tête dans sa position de travail, pour l'en écarter ou pour la déplacer en travers des pistes
23.
Magnetic disk device and method of detecting flying height of magnetic head
According to one embodiment, a magnetic disk device comprising a magnetic head expanding to the magnetic disk side with the generated heat of a heater, a flying height measurement unit measuring a flying height of the magnetic head, based on a read signal of the magnetic head for data for measuring flying height written to the magnetic disk, and a controller. The controller detects variation of a measurement value of the flying height measurement unit, based on change of “correspondence between a change amount of the supply power and a measurement value of the flying height measurement unit”.
G11B 5/58 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p. ex. pour compenser les irrégularités de surface ou pour suivre les pistes du support
G11B 5/60 - Maintien dynamique de l'écartement entre têtes et supports d'enregistrement à l'aide d'un fluide
24.
DISK DEVICE WITH WIRING BOARD ON OUTER SURFACE OF HOUSING AND CONNECTED TO MOTOR AND SEALING CONFIGURATION
According to one embodiment, a disk device includes a housing with a bottom wall, magnetic disks supported on a hub of a motor, a printed circuit board provided on an outer surface of the bottom wall, and a wiring board attached on the outer surface of the bottom wall. The bottom wall includes a recess formed in the outer surface, a step located on border between the outer surface and the recess, and through holes opened to the recess. The wiring board includes one end portion disposed in the recess and connection pads on the one end portion, connected to lead wires of a coil. An adhesive is filled into the recess and the through holes, and covers the one end and a solder joint and seals the through holes.
G11B 25/04 - Appareils caractérisés par la forme du support d'enregistrement employé mais non spécifiques du procédé d'enregistrement ou de reproduction utilisant des supports d'enregistrement plats, p. ex. disques, cartes
G11B 33/04 - ÉbénisterieBoîtiersBâtisDisposition des appareils dans ou sur ceux-ci modifiés pour le rangement des supports d'enregistrement
G11B 33/14 - Diminution de l'influence des paramètres physiques, p. ex. changements de température, humidité, poussière
A disk device according to one embodiment includes magnetic disks, arms each with a first depression, suspensions, and first dampers. The magnetic disks are aligned along a first rotation axis. The arms are aligned along a second rotation axis. Each arm includes a first side surface, a second side surface with a slit, a first surface, a second surface, a first seating surface, and a second seating surface. The first depression is open to the first side surface and the first surface, and located closer to the first rotation axis than the slit. Each of the suspensions is supported by the first seating surface or the second seating surface and partially accommodated in the slit. Each of the first dampers is attached to each of the arms along the first depression.
According to one embodiment, a magnetic disk device includes a magnetic disk, a magnetic head, and a controller including an offtrack write table, positioning the magnetic head, and registering an address at which data in a track is written and a positioning error of the magnetic head at the address for the track, in the offtrack write table. When writing data to a first sector, the controller corrects a positioning target position of the first sector, based on a positioning error of a second sector located on two tracks away in a radial direction from the first sector.
G11B 5/54 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour amener la tête dans sa position de travail, pour l'en écarter ou pour la déplacer en travers des pistes
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p. ex. pour compenser les irrégularités de surface ou pour suivre les pistes du support pour suivre les pistes d'un disque
According to an embodiment, tracks on a magnetic disk each include a long-distance sector having a length in the circumferential direction covering two or more servo sectors. A controller executes an acquisition operation to acquire one or more evaluation amounts on the basis of a track pitch in each of the two or more servo sectors included in a portion adjacent to the long-distance sector. The controller executes a protection operation to protect data of an adjacent track in a case where a total value of the one or more evaluation amounts exceeds a first threshold value.
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
G11B 5/02 - Procédés d'enregistrement, de reproduction ou d'effacementCircuits correspondants pour la lecture, l'écriture ou l'effacement
G11B 5/55 - Changement, sélection ou acquisition de la piste par déplacement de la tête
G11B 20/12 - Mise en forme, p. ex. disposition du bloc de données ou de mots sur les supports d'enregistrement
According to one embodiment, a semiconductor device includes a pellet; a first conductor and a second conductor between which the pellet is interposed in a first direction; a first bonding material that bonds the pellet and the first conductor; and a second bonding material that bonds the pellet and the second conductor. A first surface of the first conductor facing the pellet has a depression.
A semiconductor device according to an embodiment includes a gate electrode extending in a first direction, a gate insulation film that covers the gate electrode, a first semiconductor region of a first conductivity type extending in a second direction orthogonal to the first direction below the gate insulation film, and a second semiconductor region of the first conductivity type that faces the gate insulation film across the first semiconductor region. An impurity concentration of the first conductivity type of the second semiconductor region is lower than that of the first semiconductor region.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
30.
MAGNETIC DISK DEVICE, METHOD OF CONTROLLING MAGNETIC DISK DEVICE, AND COMPUTER PROGRAM PRODUCT
According to one embodiment, a magnetic disk device includes a first MA amplifier that drives a first micro actuator that positions a corresponding magnetic head, a second micro actuator that positions a corresponding magnetic head, a second MA amplifier that drives the second micro actuator, and a controller that, when performing switching from an MA amplifier of a switching source in an on state to an MA amplifier of a switching destination in an off state, starts up the MA amplifier of the switching destination while maintaining the MA amplifier of the switching source in the on state, and performs the switching from the MA amplifier of the switching source to the MA amplifier of the switching destination after a predetermined time elapses.
According to one embodiment, a controller of a magnetic disk apparatus operates in a first operation of writing to data regions on a magnetic disk of the magnetic disk apparatus while positioning a magnetic head. In the first operation, the controller demodulates burst patterns to obtain a first burst demodulated value set and corrects the first burst demodulated value set to obtain a second burst demodulated value set. The first burst demodulated value set is corrected on the basis of a correction algorithm using a first set value as an argument. The controller calculates, on the basis of the second burst demodulated value set, an offset amount of the magnetic head from one of servo tracks on the magnetic disk.
G11B 5/55 - Changement, sélection ou acquisition de la piste par déplacement de la tête
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p. ex. pour compenser les irrégularités de surface ou pour suivre les pistes du support pour suivre les pistes d'un disque
32.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device includes a semiconductor part, first to third electrodes, and a control electrode. The first electrode is provided on a back surface of the semiconductor part. The second electrode is provided at a front surface side of the semiconductor part. The third electrode and the control electrode are provided inside a trench of the semiconductor part. The control electrode includes first and second control portions. The semiconductor device further includes first to third insulating films. The first insulating film is between the control electrode and the semiconductor part. The second insulating film covers the first and second control portions. The third insulating film is between the second electrode and the second insulating film. The third insulating film includes a portion extending between the first and second control portions. The third electrode is between the first electrode and the extension portion of the third insulating film.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
33.
MAGNETIC DISK DEVICE, METHOD FOR CONTROLLING MAGNETIC DISK DEVICE, AND COMPUTER PROGRAM PRODUCT
A magnetic disk device according to an embodiment operates by receiving power supply from a first power source and a second power source. The first power source supplies power with a first voltage. The second power source supplies power with a second voltage higher than the first voltage. The magnetic disk device includes a first control device and a second control device. The first control device detects whether or not power cutoff has occurred in either one of the first power source and the second power source. When the first control device detects the power cutoff having occurred in either one of the first/second power sources, the second control device causes the other one of the first/second power sources to supply power to an unnecessary circuit until power down processing is completed in the unnecessary circuit. The unnecessary circuit is a circuit whose power supply is to be stopped.
According to one embodiment, a planning system includes an allocating unit configured to perform an allocation process of allocating, for each of production operations of producing products planned to be conducted on multiple planned production dates, at least one of multiple allocation materials which comprise one or more parts and one or more work-in-progress items, wherein, in the allocation process, the allocating unit calculates, for each of the production operations of producing the products for which the one or more parts are allocated, an expected consumption date representing a schedule to consume the allocated one or more parts.
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, and a second semiconductor region. The first to third electrodes extend in the first direction. A second direction from the first electrode to the second electrode is perpendicular to the first direction. The first semiconductor region includes Alx1Ga1−x1N (0≤x1<1). The first semiconductor region includes first to fifth partial regions. A third direction from the first partial region to the first electrode crosses a plane including the first and second directions. A direction from the second partial region to the second electrode, and a direction from the third partial region to the third electrode are along the third direction. The second semiconductor region includes Alx2Ga1−x2N (0
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
According to one embodiment, a wafer includes a silicon substrate, a first layer, and a plurality of structures. The first layer includes aluminum and nitrogen. The plurality of structures are provided between a part of the silicon substrate and a part of the first layer in a first direction from the silicon substrate to the first layer. The plurality of structures includes a first element and silicon. The first element includes at least one selected from the group consisting of Ni, Cu, Cr, Mn, Fe and Co. Another part of the first layer is in contact with another part of the silicon substrate.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
37.
SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING SAME
A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
H03K 17/60 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors bipolaires
A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.
H01L 27/07 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive les composants ayant une région active en commun
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
39.
ERRONEOUS-WRITING-TO-REGISTER PREVENTION CIRCUIT, MICROCONTROLLER, AND ERRONEOUS-WRITING-TO-REGISTER PREVENTION METHOD
An erroneous-writing-to-register prevention circuit includes: a selection circuit configured to select any first register in relation to which erroneous write is prevented among a plurality of registers; a memory configured to store a first address of the first register; an address comparator configured to compare the first address and a second address when a write signal for a register with the second address among the plurality of registers is inputted, and to output a match signal when the first address and the second address match; and a write control circuit configured not to output the write signal to the first register in a case where the match signal is inputted once from the address comparator.
According to one embodiment, a magnetic head includes first and second magnetic poles, and a stacked body provided between the first and second magnetic poles. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the second magnetic pole, a first nonmagnetic layer provided between the first and second magnetic layers, a second nonmagnetic layer provided between the second magnetic layer and the second magnetic pole, and a third nonmagnetic layer provided between the first magnetic pole and the first magnetic layer. The first magnetic layer includes a first element including at least one of Fe, Co, or Ni. The second magnetic layer includes (Fe100-xCox)100-yEy. A second element E includes at least one selected from the group consisting of Cr, V, Mn, Yi, and Sc. The first magnetic layer does not include the second element.
G11B 5/21 - Structure ou fabrication de la surface de la tête en contact physique avec le milieu d'enregistrement ou immédiatement adjacente à celui-ciPièces polairesEntrefers les pièces polaires étant en feuilles de métaux ferreux
G11B 5/127 - Structure ou fabrication des têtes, p. ex. têtes à variation d'induction
G11B 5/31 - Structure ou fabrication des têtes, p. ex. têtes à variation d'induction utilisant des films minces
A disk device includes magnetic disks, a magnetic head, a suspension, and a carriage. The suspension includes a flexible substrate on which the magnetic head is mounted. The carriage includes an arm to which the suspension is attached. The arm includes opposing first and second end surfaces, a side surface extending between the first end surface and the second end surface, and a protruding body that protrudes from the side surface and has a first surface parallel to and spaced apart from the first end surface and a second surface parallel to and spaced apart from the second end surface. The flexible substrate includes a strip extending along the side surface. The strip includes a portion positioned between the first end surface and the protruding body in the axial direction and is positioned between the first end surface and the second end surface in the axial direction.
A control device according to an embodiment includes a first region including a CPU and a sequence signal generation circuit; and a second region including an abnormality detection circuit, a sequence signal detection circuit, a first register storing multiple methods of recovery from occurrence of abnormality, and a second register for use to select one method of recovery from the multiple methods of recovery, the second region being higher in reliability than the first region. The sequence signal generation circuit converts a first signal that specifies the one method of recovery into a sequence signal containing a second signal, which is a digital signal of a predetermined pattern, and the sequence signal detection circuit changes a set value of the second register upon receiving the second signal.
G06F 11/20 - Détection ou correction d'erreur dans une donnée par redondance dans le matériel en utilisant un masquage actif du défaut, p. ex. en déconnectant les éléments défaillants ou en insérant des éléments de rechange
G06F 11/16 - Détection ou correction d'erreur dans une donnée par redondance dans le matériel
43.
MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING DEVICE
According to one embodiment, a magnetic recording medium includes a first magnetic region, a second magnetic region, a third magnetic region, a fourth magnetic region, and a fifth magnetic region. The second magnetic region is provided between the fifth magnetic region and the first magnetic region in a first direction from the fifth magnetic region to the first magnetic region. The third magnetic region is provided between the fifth magnetic region and the second magnetic region in the first direction. The fourth magnetic region is provided between the fifth magnetic region and the third magnetic region in the first direction. A first composition ratio of a first Pt atomic concentration to a first Co atomic concentration in the first magnetic region is higher than a second composition ratio of a second Pt atomic concentration to a second Co atomic concentration in the second magnetic region.
G11B 5/66 - Supports d'enregistrement caractérisés par l'emploi d'un matériau spécifié comportant uniquement le matériau magnétique, sans produit de liaison les supports d'enregistrement étant constitués par plusieurs couches magnétiques
G11B 5/65 - Supports d'enregistrement caractérisés par l'emploi d'un matériau spécifié comportant uniquement le matériau magnétique, sans produit de liaison caractérisé par sa composition
According to one embodiment, an electrostatic protection circuit includes first, second and third diodes, a resistance element, and a MOS field-effect transistor. The first diode is coupled to a first wiring. The second diode is coupled between the first diode and a second wiring. The third diode is coupled between the first wiring and a first node at which the first diode and the second diode are coupled to each other. The resistance element is coupled between the third diode and the first wiring. The MOS field-effect transistor is coupled between the first node and the first wiring. A gate of the MOS field-effect transistor is electrically coupled to a second node at which the resistance element and the third diode are coupled to each other.
According to one embodiment, a circuit includes: a core circuit including first and second scan layers; and a test control circuit that controls a scan test on the first and second scan layers. The test control circuit supplies a first test data and a first shift clock to the first scan layer and then sets the first scan layer to a waiting state, supplies a second test data and a second shift clock to the second scan layer during a period in which the first scan layer is in the waiting state, sets the second scan layer to a waiting state after supplying the second test data and the second shift clock to the second scan layer, and supplies a first launch clock and a first capture clock to the first scan layer after setting the second scan layer to the waiting state.
A semiconductor device according to an embodiment includes: a first electrode; a second electrode; a silicon carbide layer including a first silicon carbide region of a first conductive type including a first region, a second region having a higher first-conductive-type impurity concentration than the first region, and a third region between the second region and the first electrode, a second silicon carbide region of a second conductive type, a third silicon carbide region of the first conductive type, and a fourth silicon carbide region of the second conductive type between the first region and the second region; a gate electrode in the silicon carbide layer; and a gate insulating layer. The second region includes a first portion and a second portion. The second portion is between the first portion and the gate insulating layer, and has a lower first-conductive-type impurity concentration than a first-conductive-type impurity concentration of the first portion.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/36 - Corps semi-conducteurs caractérisés par la concentration ou la distribution des impuretés
H01L 29/66 - Types de dispositifs semi-conducteurs
47.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
According to an embodiment, a semiconductor device includes a conductive layer, a semiconductor portion, a first source electrode, a second source electrode, a first control electrode, and a first control electrode. The semiconductor portion is provided on the conductive layer. The semiconductor portion has a first element region and a second element region. A first end portion of the conductive layer is located inside a second end portion of the semiconductor portion in a plan view. An outer periphery formed by the first end portion surrounds both at least a part of a third end portion of the first element region and at least a part of a fourth end portion of the second element region.
H01L 27/088 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ les composants étant des transistors à effet de champ à porte isolée
A semiconductor device according to an embodiment includes: a copper layer having a lower surface, an upper surface, a first side surface, and a second side surface, in which a first distance between the first side surface and the second side surface is larger than a second distance between the lower surface and the upper surface; a first metal layer that is in contact with the lower surface, the first side surface, and the second side surface and contains a first metal material different from copper; and a second metal layer that is in contact with the upper surface and contains a second metal material different from copper.
A magnetic recording and reproducing device includes a magnetic recording medium including a protective layer that is exposed to an enclosed interior volume of the magnetic recording and reproducing device, which contains oxygen and helium, a magnetic head including a heat assist element that is also exposed to the enclosed interior volume, the magnetic head configured to record data onto the magnetic recording medium, and an oxygen amount measurement unit configured to measure an oxygen amount in the enclosed interior volume.
G11B 5/54 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour amener la tête dans sa position de travail, pour l'en écarter ou pour la déplacer en travers des pistes
G11B 5/40 - Moyens de protection des têtes, p. ex. contre une température excessive
G11B 5/60 - Maintien dynamique de l'écartement entre têtes et supports d'enregistrement à l'aide d'un fluide
G11B 33/14 - Diminution de l'influence des paramètres physiques, p. ex. changements de température, humidité, poussière
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
50.
MAGNETIC RECORDING AND REPRODUCING DEVICE AND CONTROL METHOD THEREOF
A magnetic recording and reproducing device includes a magnetic recording medium having a lubricant on a surface of the magnetic recording medium, a heat-assisted magnetic recording head configured to perform magnetic recording on the magnetic recording medium, a humidity sensor, and a write procedure control circuit configured to control a write procedure of the heat-assisted magnetic recording head in accordance with a measurement result of the humidity sensor.
According to one embodiment, a disk device includes a magnetic disk, a magnetic head, a suspension, a ramp mechanism, a housing, and a screw. The suspension holds the magnetic head and moves between a load position and an unload position. The ramp mechanism includes a ramp member that holds the suspension at the unload position, and a cylindrical member with a through hole, being fixed to the ramp member. The housing includes a first support surface with a screw hole supporting the cylindrical member. The screw includes a screw head and a screw shaft fitted into the screw hole through the through hole. The screw holds the cylindrical member between the screw head and the first support surface. A contact area between the cylindrical member and the housing is set to larger than a contact area between the cylindrical member and the screw head.
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first region, and a second region. The second electrode is separated from the first electrode. The first region includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a sixth semiconductor region of the first conductivity type. The fifth semiconductor region, located between the fourth semiconductor region and a portion of the third semiconductor region, has a higher first-conductivity-type impurity concentration than the third semiconductor region. The sixth semiconductor region, located between the third semiconductor region and the portion of the second electrode, has a higher first-conductivity-type impurity concentration than the third semiconductor region.
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
According to one embodiment, a control circuit includes a first bias terminal, a second bias terminal, an input-side terminal, a diode, a capacitor, a first transistor, a second transistor, and an output-side terminal. The first transistor includes a first control terminal configured to turn on and off electrical conduction between a third terminal and a fourth terminal. The second transistor includes a second control terminal configured to turn on and off electrical conduction between a fifth terminal and a sixth terminal. A control signal based on a signal input to the input-side terminal is input to the first control terminal and the second control terminal, and the first transistor and the second transistor are alternately turned on and alternately turned off.
H03K 17/0412 - Modifications pour accélérer la commutation sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
According to one embodiment, a capacitor includes a semiconductor substrate, an electrode layer extending from a surface of the semiconductor substrate into the semiconductor substrate and containing a metal silicide in the semiconductor substrate, a dielectric film provided between the electrode layer and the semiconductor substrate and electrically insulating the electrode layer from the semiconductor substrate, a first terminal connected to the electrode layer, and a second terminal connected to the semiconductor substrate.
The embodiment is a semiconductor device containing silicon carbide. The semiconductor device includes a semiconductor substrate, a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion. Each of the first semiconductor portion to the third semiconductor portion contains impurities having a first conductivity type, and the fourth semiconductor portion contains impurities having a second conductivity type. A carrier concentration of the second semiconductor portion is the same as or lower than a carrier concentration of the first semiconductor portion. The carrier concentration of the second semiconductor portion is the same as or higher than a carrier concentration of the third semiconductor portion. A point defect density of the second semiconductor portion is the same as or higher than a point defect density of the first semiconductor portion, and is higher than a point defect density of the third semiconductor portion.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/36 - Corps semi-conducteurs caractérisés par la concentration ou la distribution des impuretés
According to one embodiment, an amplifier circuit is an auto-zero amplifier including a main amplifier, a null amplifier, and a capacitor connected to an output terminal of the null amplifier without interposing a switch for switching an operation mode provided at the output terminal.
According to one embodiment, a semiconductor device includes first and second electrodes, and first and second regions. The first region includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a plurality of third semiconductor regions of the first conductivity type, a gate electrode, a conductive part, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a sixth semiconductor region of the second conductivity type. The gate electrode faces one of the plurality of third semiconductor regions via a gate insulating layer. The conductive part faces another one of the plurality of third semiconductor regions via an insulating layer, and is electrically connected with the second electrode. The fourth and six semiconductor regions are located on the one and the other one of the plurality of third semiconductor regions, respectively.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
58.
HEAT STAMP AND METHOD FOR RELEASING PROTECTIVE TAPE USING HEAT STAMP
A heat stamp according an embodiment is the heat stamp used for releasing a protective tape from a substrate, the substrate including a first substrate surface, a second substrate surface provided opposite to the first substrate surface, the protective tape pasted on the second substrate surface, and a release tape having a strip-like configuration, the release tape being pasted on the protective tape from above a fifth end of the second substrate surface to above a sixth end of the second substrate surface, the fifth end and the sixth end facing each other across the center of the second substrate surface, the heat stamp including: a bottom surface having a first side, the first side being provided on a side of a releasing direction of the release tape, the releasing direction being parallel to a longitudinal direction of the strip-like configuration.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p. ex. réparationAppareils pour ces opérations
According to one embodiment, a storage includes a flexible printed circuit board and an electronic component. The flexible printed circuit board includes a first insulating layer, a first conductive layer on a first surface of the first insulating layer, and a second conductive layer on a second surface of the first insulating layer. The second surface is opposite the first surface. The first conductive layer is provided with a land. The second conductive layer covers the land via the first insulating layer in a first direction in which the first surface faces. The electronic component includes a pin joined to the land.
A semiconductor device includes a first electrode, a first semiconductor layer connected to the first electrode, a second semiconductor layer located on a portion of the first semiconductor layer, a third semiconductor layer located on a first portion of the second semiconductor layer, a fourth semiconductor layer located on a second portion of the second semiconductor layer, a fifth semiconductor layer located on a third portion of the second semiconductor layer, a second electrode, a third electrode connected to the third, fourth, and fifth semiconductor layers, and a metal film connected to the third electrode. A length in a second direction of the fifth semiconductor layer is greater than a length in the second direction of the fourth semiconductor layer. The second direction crosses a first direction. The first direction is from the first electrode toward the first semiconductor layer.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
A semiconductor device includes a charging circuit, a discharging circuit, a detection circuit, and a storage circuit. The charging circuit performs charging based on a first signal and a second signal. The discharging circuit performs discharging based on a third signal. The detection circuit outputs a fourth signal that has a level that varies based on a change in a rate of change of potential. The storage circuit receives a fifth signal and the fourth signal, stores a level of the fifth signal based on a first edge of the fourth signal, and outputs the second signal that is based on the stored level. The outputting is performed based on a second edge of the fourth signal.
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
According to one embodiment, a magnetic disk device includes a magnetic disk, a magnetic head that includes a write head configured to write data to the magnetic disk, a read head configured to read data from the magnetic disk, and a heater configured to adjust a flying height of the write head, and a controller that includes a first detection unit configured to detect the flying height of the write head, a second detection unit configured to detect a positioning error of the magnetic head with respect to a track of the magnetic disk, and a memory configured to store a first threshold and a second threshold.
A signal transmission circuitry is a circuitry that transmits a signal from a first system on a transmission side to a second system on a reception side. The first system includes an inductor, a first current source controlled by a first switch, a second current source connected in series with the first current source via the inductor and controlled by a second switch, a third switch connected in parallel with the first current source and controlling connection with a ground point, and a fourth switch connected in parallel with the second current source and controlling connection with the ground point.
H03K 17/691 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ avec une isolation galvanique entre le circuit de commande et le circuit de sortie utilisant un couplage par transformateur
A serial data receiving apparatus according to an embodiment includes a detection unit and an alignment unit. The detection unit is configured to detect a specific bit arrangement in which an idle code or an end code worth of one word, and a head code worth of one word are sequentially consecutive from a bit arrangement of parallel data worth of three words converted from serial data, an alignment of which is not adjusted. The alignment unit is configured to adjust an alignment of word data based on a bit boundary of the specific bit arrangement detected.
A semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a second electrode, a third electrode, a first insulating film, and a third semiconductor layer of the first conductivity type. The first semiconductor layer is connected to the first electrode. The second semiconductor layer contacts the first semiconductor layer. The second electrode is connected to the second semiconductor layer. The first insulating film is located between the third electrode and the first semiconductor layer and between the third electrode and the second semiconductor layer. The third semiconductor layer is located between the first insulating film and the first semiconductor layer. The third semiconductor layer contacts the first insulating film and the first semiconductor layer. The third semiconductor layer has a higher carrier concentration than the first semiconductor layer.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
According to one embodiment, a head suspension assembly includes a support plate, a wiring member on the support plate, and a magnetic head mounted on the wiring member. The magnetic head includes a slider, a head element, connection pads, and a laser oscillation element on the slider. The wiring member includes a plurality of first connection terminals each having a bonding surface bonded to a connection pad of the slider and a second connection terminal including a bonding surface bonded to a connection pad of the laser oscillation element and a non-bonding surface opposite to the bonding surface. The wiring member includes a cover layer covering at least a part of the non-bonding surface of the second connection terminal.
According to one embodiment, a magnetic disk device includes a read control system that extracts scrambled data from media data read from a medium and inspection data associated with a seed value at the time of write, generates inspection data for data extracted from the media data, obtains from the inspection data and inspection data extracted from the media data, a seed value associated with both, compares this seed value with the seed value expected by the controller, and evaluates, when the comparison result is a mismatch, the data as an error, whereas when match, descrambles the data extracted from the media data using the seed value.
According to one embodiment, a semiconductor device includes a semiconductor chip, drain, source and gate electrodes, mold layers and first and second coating films. The semiconductor chip has a drain region on a first surface, and source and gate regions on a second surface facing the first surface. The drain electrode is provided on the drain region. The source electrode is provided on the source region. The gate electrode is provided on the gate region. The mold layers are provided on side surfaces of the semiconductor chip, the source and gate electrodes. The first coating films are provided on a lower surface and side surfaces of the drain electrode, an upper surface of the source electrode, and an upper surface of the gate electrode. The second coating films are provided on an upper surface and side surfaces of the mold layers.
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/29 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par le matériau
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
According to one embodiment, a semiconductor device includes: a switch circuit including a first switch configured to control an output of a first power supply voltage, and a second switch configured to control an output of a second power supply voltage, the switch circuit being configured to switch the first power supply voltage and the second power supply voltage; and a control circuit configured to receive a first control signal related to an input of the first power supply voltage, and a second control signal related to an input of the second power supply voltage, configured to detect the inputs of the first and second power supply voltages, and configured to control an operation mode of the switch circuit, based on a detection result of the first and second control signals and the first and second power supply voltages.
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
According to the present embodiment, a semiconductor device includes a semiconductor substrate, a circuit element, a first wiring layer, and an element protection member. The circuit element is formed on an upper surface side of the semiconductor substrate and includes at least one switching element. The first wiring layer includes a plurality of first wires electrically connected to the circuit element and is provided above the semiconductor substrate via a first interlayer dielectric film. The element protection member extends along an upper surface of the semiconductor substrate to discontinuously surround the circuit element with a conductive member. A first wire insulation film between the first wires in the first wiring layer is formed by an oxide insulation film with a dielectric constant of 3.5 or more.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/58 - Dispositions électriques structurelles non prévues ailleurs pour dispositifs semi-conducteurs
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
According to one embodiment, a disk device includes a disk-shaped recording medium, a magnetic head including a write head, a read head, and a heater, and a controller including a reference signal generator outputting a reference signal having a constant voltage amplitude at the same frequency as a high-frequency component of a gap measurement signal recorded in the recording medium, a measurer measuring a component amplitude of a reproduced signal of the gap measurement signal and an amplitude of the reference signal, and a heater controller controlling a power value of heater power supplied to the heater based on the measured values of the component amplitude and the amplitude of the reference signal.
G11B 5/54 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour amener la tête dans sa position de travail, pour l'en écarter ou pour la déplacer en travers des pistes
G11B 5/60 - Maintien dynamique de l'écartement entre têtes et supports d'enregistrement à l'aide d'un fluide
G11B 11/10 - Enregistrement sur, ou reproduction depuis le même support d'enregistrement, dans lesquels, pour ces deux opérations, les procédés ou les moyens sont couverts par différents groupes principaux des groupes ou par différents sous-groupes du groupe Supports d'enregistrement correspondants utilisant l'enregistrement par magnétisation ou démagnétisation
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrementReproduction par des moyens magnétiquesSupports d'enregistrement correspondants
72.
ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, an electronic device includes a substrate, an electrode, and a facing portion. The substrate has a through hole. The electrode is provided in the through hole in the substrate and extends along an axial direction of the through hole. The facing portion is provided on the substrate, is disposed at a position closer to a center of the through hole in a width direction than is the electrode, and faces, in the width direction, a portion of the electrode on one end side in the axial direction.
A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a conductive part, an insulating part, and a third electrode. The second semiconductor layer is located on the first semiconductor layer. The first electrode is located on the second semiconductor layer. The first electrode includes an electrode part and an electrode extension part. The electrode part contacts the second semiconductor layer. The electrode extension part extends from an upper end portion of the electrode part. The conductive part is positioned between the first electrode and the second electrode. The conductive part contacts an upper surface of the second semiconductor layer and contacting the first electrode. The insulating part is located on the conductive part and is positioned between the conductive part and the electrode extension part.
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
A semiconductor device includes: a first chip having a first substrate surface, a second substrate surface provided on a side opposite to the first substrate surface, and a plurality of first through holes, a plurality of charged particle beams passing through the first through holes; a second chip provided on the first chip and having a third substrate surface facing the second substrate surface, a fourth substrate surface, and a plurality of second through holes provided on the first through holes, the charged particle beams passing through the second through holes; a plurality of first electrodes provided on the first substrate surface so as to be adjacent to the first through holes; a plurality of second electrodes provided on the first substrate surface; a plurality of third electrodes provided on the fourth substrate surface so as to be adjacent to the second through holes; and a plurality of fourth electrodes provided on the fourth substrate surface, wherein the first electrodes are a first pair of electrodes for deflecting the charged particle beams, the third electrodes are a second pair of electrodes for deflecting the charged particle beams, the second electrode and the fourth electrode are an additional electrode pattern other than the first pair of electrodes and the second pair of electrodes for deflecting the charged particle beams, and an electrode pattern formed by the first electrode and the second electrode on the first substrate surface and an electrode pattern formed by the third electrode and the fourth electrode on the fourth substrate surface are not symmetrical with respect to opposite substrate surfaces of the two chips.
A bonding-type interconnection member includes a first substrate; a first interconnection portion stacked on the first substrate and including a first insulating layer, a first interconnection layer, and a first connection hole reaching the first interconnection layer; a second substrate facing the first interconnection portion in a first direction; a bonding metal portion provided between the first connection hole and the second substrate; a first conductive film provided in the first connection hole and in contact with the first interconnection layer on a bottom surface of the first connection hole; and a second conductive film provided between the first conductive film and the bonding metal portion, and in contact with the first conductive film and the bonding metal portion. The first conductive film is made of a material different from a material of the second conductive film and a material of the bonding metal portion.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A disk device according to one embodiment includes magnetic disks, a spindle motor, a housing, a first board, and a first connector. The magnetic disks are arranged in an axial direction. The spindle motor rotates the magnetic disks about a first rotation axis. The magnetic disks and the spindle motor are accommodated in an inner space in the housing. The housing includes a first wall having the spindle motor attached thereto, and a second wall protruding from the first wall to surround the inner space. The first board is attached to an outer surface of the second wall. The first connector is attached to the first board and is connected to an external device. Each of the magnetic disks has a diameter of 80 mm or more and 100 mm or less. The housing has a maximum dimension of 26.2 mm or more in the axial direction.
An embodiment includes a semiconductor portion, a first electrode, a second electrode, a first control electrode, a second control electrode, a conductive plate, and a bonding material. The first electrode, the second electrode, the first control electrode, and the second control electrode are provided above the semiconductor portion. The conductive plate is provided below the semiconductor portion. The bonding material is provided between the semiconductor portion and the conductive plate. A thin portion is thinner than a mounting portion. In a plan view, the semiconductor portion and the conductive plate are rectangular, and the conductive plate includes the mounting portion on which the semiconductor portion is mounted and the thin portion surrounding the mounting portion. Vertices of the semiconductor portion are located in the thin portion.
According to one embodiment, a magnetic disk device includes a loop shaping filter by a digital filter, which is disposed in parallel to a controller, having a peak at certain frequency, and coefficients of which are determined by a sensitivity function and a controlled object, wherein the coefficients of the loop shaping filter of the digital filter based on a change in a sampling period of servo information.
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p. ex. pour compenser les irrégularités de surface ou pour suivre les pistes du support pour suivre les pistes d'un disque
A power source circuit according to an embodiment includes: first and second transistors connected to a current path between an input terminal and an output terminal; a first node that supplies a first control voltage to a gate of the first transistor; a comparator with a first input terminal to which a voltage supplied to the input terminal is applied and a second input terminal to which a voltage appearing at a second node being a connecting point of respective drains of the first and second transistors is applied, the comparator being configured to compare voltages of the first input terminal and the second input terminal to each other and to control the first control voltage to be supplied to the first node based on a comparison result; and a diode connected between the first input terminal and the second input terminal of the comparator.
H03K 17/06 - Modifications pour assurer un état complètement conducteur
H03K 5/24 - Circuits présentant plusieurs entrées et une sortie pour comparer des impulsions ou des trains d'impulsions entre eux en ce qui concerne certaines caractéristiques du signal d'entrée, p. ex. la pente, l'intégrale la caractéristique étant l'amplitude
H03K 17/08 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension
According to the present embodiment, a semiconductor device includes a substrate, a semiconductor chip, and a capacitor. The substrate includes at least a grounding terminal and is at the same potential as the grounding terminal. The semiconductor chip is arranged on the substrate and connected to the grounding terminal via a first bonding wire, and includes a circuit driven with a predetermined clock frequency and an analog circuit. The capacitor is arranged on the substrate and connected to at least either the circuit or the analog circuit at one end via a connection wire.
A method of manufacturing a semiconductor device according to an embodiment includes: the method of manufacturing a semiconductor device from a substrate and a sheet, the substrate including a semiconductor substrate including a first part including a first surface and a second surface provided on the opposite side of the first surface, and an annular second part surrounding the second surface and protruding from the second surface in a direction perpendicular to the second surface, and a first conductive film provided in contact with a top surface and an inner side surface of the second part, and the second surface, the sheet being attached to the first conductive film provided in contact with the top surface and the inner side surface of the second part, and the second surface; the method comprising: separating the second part from the first part by pressing a polishing tape against the first surface provided on the opposite side of the second part and polishing the semiconductor substrate; and cutting the first conductive film between the first part and the separated second part by pressing the polishing tape against the first conductive film between the first part and the separated second part.
H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
According to one embodiment, a protection circuit comprises a first power line, a second power line, a first transistor, a first resistor, a second resistor, a second transistor, and a trigger circuit. A drain of the first transistor is connected to the first power line. A source of the first transistor is connected to the second power line. A drain of the second transistor is connected to the first power line. A source of the second transistor is connected to a first node. The trigger circuit is connected to each of the first node and the second power line. The trigger circuit is configured to control the first transistor based on a voltage change of the first node.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
According to one embodiment, a high frequency semiconductor integrated circuit includes a first input terminal, a second input terminal, a first output terminal, a second output terminal, first to fourth switch circuits. In a case where a coupling destination of the first input terminal is switched from the first output terminal to the second output terminal, a third switching operation changing the third switch circuit from an ON state to an OFF state and a fourth switching operation changing the fourth switch circuit from the OFF state to the ON state are finished, after a first switching operation changing the first switch circuit from the ON state to the OFF state and a second switching operation changing the second switch circuit from the OFF state to the ON state are finished.
H03K 17/0412 - Modifications pour accélérer la commutation sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
H03K 17/693 - Dispositifs de commutation comportant plusieurs bornes d'entrée et de sortie, p. ex. multiplexeurs, distributeurs
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, and a second electrode. The third semiconductor region is located on the second semiconductor region, and has a higher second-conductivity-type impurity concentration than the second semiconductor region. The second electrode is located on the third semiconductor region. The second electrode includes a first part and a second part. The first part is located in the second semiconductor region. The second part is positioned on the first part, and contacts the third semiconductor region in a second direction perpendicular to a first direction from the first electrode toward the first semiconductor region. A length of the first part is greater than a length of the second part in the second direction.
H01L 27/07 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive les composants ayant une région active en commun
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
A semiconductor device according to an embodiment includes: a silicon carbide layer having a first face and a second face; first and second gate electrodes; a first silicon carbide region; a second silicon carbide region between the first silicon carbide region and the first face; a third silicon carbide region between the second silicon carbide region and the first face; a fourth silicon carbide region between the third silicon carbide region and the first face; a first electrode; and a second electrode. The first electrode includes a first portion, and the first portion includes a first contact face in contact with the fourth silicon carbide region, a second contact face in contact with the fourth silicon carbide region, a third contact face in contact with the fourth silicon carbide region and the third silicon carbide region, and a fourth contact face in contact with the third silicon carbide region.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
86.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device according to embodiments includes a device region and a dicing region surrounding the device region. The device region includes a first electrode, a second electrode, and a silicon carbide layer having a first face on the side of the first electrode and a second face on the side of the second electrode. At least a portion of the silicon carbide layer is provided between the first electrode and the second electrode. The dicing region includes the silicon carbide layer having the first face and the second face. A first maximum distance from the second face to the first face of the device region in a normal direction of the second face is greater than a second maximum distance from the second face to the first face of the dicing region in the normal direction.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 21/784 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs qui consistent chacun en un seul élément de circuit le substrat étant un corps semi-conducteur
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p. ex. marques de repérage, schémas de test
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
87.
ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME
An electronic component includes: a first substrate having a first surface with a first region and a second region, a plurality of first bumps provided in the first region, and zero or one or more second bumps provided in the second region, the number of second bumps being smaller than the number of first bumps; and a second substrate having a second surface with a third region facing the first surface and the first region and a fourth region facing the second region, a plurality of third bumps provided in the third region and in contact with the first bumps, zero or one or more fourth bumps provided in the fourth region and in contact with the second bumps, a third surface provided on a side opposite to the third region and having a first distance from the second surface, and a fourth surface provided on a side opposite to the fourth region and having a second distance from the second surface shorter than the first distance, the number of fourth bumps being smaller than the number of third bumps.
A conductor layer is positioned between a gate electrode and a drain electrode. The conductor layer contacts a nitride semiconductor layer. The conductor layer is electrically connected with the drain electrode. The drain electrode includes a first part contacting the nitride semiconductor layer, and a second part positioned further toward the conductor layer side than the first part in a first direction. An insulating film includes a portion positioned between the conductor layer and the drain electrode. The second part is located on the portion of the insulating film.
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
89.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, a semiconductor device includes a semiconductor substrate and an array portion. The array portion includes a plurality of metal portions arranged on the semiconductor substrate. When a virtual quadrilateral circumscribing minimally a contour shape of the array portion on the semiconductor substrate is set, the contour shape of the array portion does not overlap each of four vertices of the virtual quadrilateral.
A semiconductor device includes first and second semiconductor layers, first to third electrodes, an insulating region and a conductive layer. The second semiconductor layer is located on the first semiconductor layer. The first electrode is located on the second semiconductor layer. The second electrode is located on the second semiconductor layer and arranged with the first electrode in a second direction. The third electrode is positioned between the first electrode and the second electrode. The insulating region is located on the second semiconductor layer. The insulating region is between the first electrode and the second electrode and next to the first electrode. The insulating region includes first and second insulating portions. The second insulating portion is positioned above the first insulating portion. The conductive layer is located between the first insulating portion and the second insulating portion. The conductive layer is electrically connected with the first electrode.
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
A bonding-type interconnection member includes a first substrate having a first through hole extending in a first direction; a second substrate having a second through hole extending in the first direction; an interconnection portion stacked on at least one of the first substrate and the second substrate, and having a through hole continuous with the first through hole and the second through hole; a conductive film provided on a side surface of the through hole of the interconnection portion; at least two bonding metal portions positioned between the first substrate and the second substrate, and bonding the first substrate and the second substrate; and a foundation metal film provided between the bonding metal portions and the interconnection portion. The conductive film is made of a material different from a material of the bonding metal portions and a material of the foundation metal film.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
92.
INTERCONNECTION MEMBER AND METHOD OF MANUFACTURING THE SAME
A width of a first through hole is greater than a width of a second through hole in a direction orthogonal to a first direction. The first through hole also extends to a part of an interconnection portion in the first direction. A side surface of the first through hole includes a first side surface portion positioned on a substrate and a second side surface portion positioned on the part of the interconnection portion. The interconnection portion includes a third face facing a first face of the substrate, a fourth face positioned on an opposite side with respect to the third face in the first direction, and a fifth face. The fifth face is continuous with the second side surface portion of the first through hole and a side surface of a conductive film, and includes an end surface of the conductive film in the first direction.
H01L 23/58 - Dispositions électriques structurelles non prévues ailleurs pour dispositifs semi-conducteurs
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
A semiconductor device according to the present embodiment includes a lead frame and a semiconductor chip. The lead frame includes a frame main surface and a frame convex portion provided on the frame main surface. The semiconductor chip includes a semiconductor layer and an electrode provided on a bottom surface of the semiconductor layer and bonded to the frame convex portion. The electrode of the semiconductor chip has a protrusion surrounding the frame convex portion, and an outer side surface of the protrusion is flush with a side surface of the semiconductor layer.
A semiconductor device includes a silicon carbide layer having a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type, a third silicon carbide region of the second conductivity type, and a fourth silicon carbide region of the first conductivity type, first and second gate electrodes extending in a first direction and provided on a first surface of the silicon carbide layer, a first electrode on the first surface and including a first portion in contact with the third and fourth silicon carbide regions and a second portion in contact with the first silicon carbide region, and a second electrode on a second surface of the silicon carbide layer. The depth of the second silicon carbide region facing the fourth silicon carbide region is shallower than the depth of the second silicon carbide region facing the first gate electrode.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
95.
Magnetic disk device and method of adjusting ATI rewrite count
According to one embodiment, a magnetic disk device includes a disk, a head, a storage unit, and a controller. The storage unit stores a reference table and an adjustment table. The reference table has a plurality of reference counts, which are m reference counts. The adjustment table has a plurality of adjustment values, which are n adjustment values. The controller includes a detector, an adjustment unit that adjusts a reference count corresponding to a case where abnormality information is detected to an ATI rewrite count having a numerical value different from the reference count, a counter, a determination unit, and a refresh processing unit.
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p. ex. pour compenser les irrégularités de surface ou pour suivre les pistes du support pour suivre les pistes d'un disque
G11B 5/54 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour amener la tête dans sa position de travail, pour l'en écarter ou pour la déplacer en travers des pistes
G11B 20/10 - Enregistrement ou reproduction numériques
A magnetic disk device includes a disk, a head, and a control circuit. When writing data to a target range of a target track, the control circuit calculates an off-track amount based on the use information indicating use states of each of the first adjacent track and the second adjacent track, positions the head according to the calculated off-track amount, and writes data in the target range with the head positioned according to the calculated off-track amount.
A magnetic recording/reproducing device includes a magnetic recording medium, a plurality of assisted magnetic recording heads, and a processor configured to write data onto the magnetic recording medium according to a first type of magnetic recording or a second type of magnetic recording and select one of the assisted magnetic recording heads for recording based on at least one of assist power and application time of the assist power when assisted magnetic recording is performed.
According to one embodiment, a semiconductor device includes first and second switch elements, first and second light emitting elements, first and second light receiving elements, first and second voltage control circuits, and first and second switch control circuits. The first switch control circuit is configured to cause the first light emitting element to emit light after a first time elapses after an input signal has transitioned from a first logic level to a second logic level. The second switch control circuit is configured to suspend light emission of the second light emitting element after a second time elapses after the input signal has transitioned from the second logic level to the first logic level.
H03K 17/785 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs opto-électroniques, c.-à-d. des dispositifs émetteurs de lumière et des dispositifs photo-électriques couplés électriquement ou optiquement commandant des commutateurs à transistors à effet de champ
According to one embodiment, an isolator includes an isolator module, the isolator module including: a first coil and a second coil, each being helically shaped and having a central axis that extends in a first direction; and a first insulator configured to seal the first coil and the second coil, wherein the first coil and the second coil are separated from each other, and the first coil is positioned inside the second coil when viewed in the first direction.
According to one embodiment, a magnetic head inspection method includes variably setting, according to a relationship between a characteristic value indicating a characteristic of an inspected magnetic head and a target moving average value of the characteristic value, a threshold of the characteristic value used for inspection in a range of upper and lower limits.