A bi-directional heat transfer apparatus comprises a heat spreader configured to attach to a device or apparatus. A plurality of thermoelectric coolers is mounted in thermal contact with a plurality of different surfaces of the heat spreader. A respective one of the plurality of fan-cooled heat sinks is mounted in thermal contact with a respective one of the plurality of thermoelectric coolers so that each of the respective ones of the plurality of fancooled heat sinks removes heat by convection cooling in a respective one of a plurality of directions.
A laser beam source (1) outputs a laser beam (L). Optical amplifiers (AMP1-AMPn) are connected in series in multiple stages and amplify the laser beam L output from the laser beam source (1) in stages. Photodetectors (PD1-PDn) detect laser beams (L1-Ln) amplified by the optical amplifiers (AMP1-AMPn), and output detection signals (DET1-DETn) indicating the detection results. A control unit (2) sequentially acquires some or all of the waveforms of the laser beams (L1-Ln) amplified by the optical amplifiers (AMP1-AMPn) on the basis of the detection signals (DET1-DETn), and controls the waveform of the laser beam L output from the laser beam source (1) so that each of the acquired waveforms is a desired waveform, thereby shaping the waveform of the laser beam (Ln) amplified by the optical amplifiers (AMPn) so as to be a desired waveform.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
B23K 26/00 - Travail par rayon laser, p. ex. soudage, découpage ou perçage
B23K 26/0622 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples par commande directe du faisceau laser par impulsions de mise en forme
H01S 3/00 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p. ex. agencement en série de deux milieux actifs séparés
A light-emitting body according to the present invention converts an incident electron beam into fluorescence. The light-emitting body comprises a substrate that transmits fluorescence and a quantum well structure part that is formed on one surface of the substrate and emits fluorescence when struck by an electron beam. The quantum well structure part has a first wavelength layer that emits fluorescence of a first wavelength in response to being struck by an electron beam and a second wavelength layer that is layered on the first wavelength layer and emits fluorescence of a second wavelength that is shorter than the first wavelength in response to being struck by an electron beam.
G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
C09K 11/00 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
H01J 37/244 - DétecteursComposants ou circuits associés
This hemoglobin concentration measurement device comprises: a light output unit that outputs, to a living body, measurement light including at least light having a first wavelength and light having a second wavelength different from the first wavelength; a light detection unit that detects the measurement light transmitted through the living body; a signal acquisition unit that acquires, on the basis of a detection result of the light detection unit, a first signal relating to blood of the living body and a second signal relating to surrounding tissue other than the blood of the living body; and a hemoglobin concentration estimation unit that estimates a hemoglobin concentration on the basis of the first signal and the second signal acquired by the signal acquisition unit when a blood flow state of the living body is a first state, and the first signal and the second signal acquired by the signal acquisition unit when the blood flow state is a second state different from the first state.
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang en utilisant des capteurs optiques, p. ex. des oxymètres à photométrie spectrale
Provided is an electron tube comprising: an electron emission unit that emits electrons in response to incidence of light; an electron detection unit that outputs a current signal in response to incidence of electrons; a first integrated circuit unit and a second integrated circuit unit that output a voltage signal in response to the input of the current signal; and a housing that houses the electron emission unit, the electron detection unit, the first integrated circuit unit, and the second integrated circuit unit.
Provided is an electron tube comprising: an electron emission unit that emits electrons in response to incidence of light; an electron detection unit that outputs a current signal in response to incidence of electrons; a first integrated circuit unit and a second integrated circuit unit that output a voltage signal in response to input of the current signal; and a housing that houses the electron emission unit and the electron detection unit. The first integrated circuit unit and the second integrated circuit unit are supported by the housing.
An optical scanner module 7 comprises: a lens optical system 22 that controls the condensed state of a light beam which is input light; and a reflection type optical scanner 23 that has a rotating stage 31 in which a rotation axis K1 is inclined at an angle β with respect to the optical axis of the light beam from the lens optical system 22, and a mirror unit 32 in which a mirror 34 is held with respect to the rotating stage 31 so as to be inclined at an angle α with respect to a rotating surface 31a of the rotating stage 31, the optical scanner causing the optical axis, of a light beam reflected by the mirror 34, to rotate at a beam deflection angle θ as a result of rotation of the rotating stage 31.
This optical scanner module 7A comprises: a circulator 21 including a polarizing beam splitter 24 that separates an optical path of a light beam having a first polarization from an optical path of a light beam having a second polarization which is orthogonal to the first polarization; a beam expander 22 that controls the diameter of the light beam of the first polarization passing through the polarizing beam splitter 24; an optical scanner 23A that emits the light beam from the beam expander 22 toward the outside while rotating the light beam at a prescribed beam deflection angle θ; and a 1/4 wavelength plate 32 that converts the polarization state of the light beam from the beam expander 22 from the first polarization to circular polarization, and converts the polarization state of return light from the outside based on emission of the light beam converted to the circular polarization to the second polarization.
This light detection device 1A comprises an optical waveguide unit 10 and a light detection unit 20. The optical waveguide unit 10 has a core layer 12 for guiding target light, and a first cladding layer 11 having a lower refractive index than the core layer 12. The light detection unit 20 is provided at a predetermined position with respect to the optical waveguide unit 10, and has a first electrode layer 21, a photoelectric conversion layer 22, and a second electrode layer 23. The photoelectric conversion layer 22 in the light detection unit 20 is configured to have a bulk heterojunction comprising a plurality of organic semiconductor materials. The light detection unit 20 is configured to include at least one metal layer in contact with the photoelectric conversion layer 22, an interface between the metal layer and the photoelectric conversion layer 22 being configured to be capable of inducing surface plasmon, and the target light being detected by coupling a guided mode in the optical waveguide unit 10 with a surface plasmon mode at the interface. Thus, a light detection device capable of satisfactorily detecting, by means of the light detection unit, target light propagating through the optical waveguide unit is realized.
H10K 30/60 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photorésistances
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
H10K 30/30 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant des hétérojonctions de masse, p. ex. des réseaux interpénétrés de domaines de matériaux donneurs et accepteurs
H10K 71/12 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation
H10K 71/13 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation en utilisant des techniques d'impression, p. ex. l’impression par jet d'encre ou la sérigraphie
H10K 71/16 - Dépôt d'une matière active organique en utilisant un dépôt physique en phase vapeur [PVD], p. ex. un dépôt sous vide ou une pulvérisation cathodique
H10K 71/40 - Traitement thermique, p. ex. recuit en présence d'une vapeur de solvant
H10K 71/60 - Formation de régions ou de couches conductrices, p. ex. d’électrodes
An inspection device comprises: an image acquisition unit 11 for acquiring an entire image of a wafer including a plurality of blocks disposed at predetermined intervals, each of the plurality of blocks including a plurality of light-emitting elements; a block region setting unit 14 for setting a plurality of block regions, corresponding to the plurality of blocks, for the entire image; and an inspection unit 17 for inspecting at least one block region among the plurality of block regions and generating data indicating an inspection result.
A correction member according to the present disclosure is for performing shading correction on a fluorescent image of a sample obtained by irradiation with excitation light. The correction member comprises a semiconductor substrate which includes: a front surface irradiated with excitation light; and a rear surface facing the reverse side from the front surface. The material of the semiconductor substrate includes an inorganic compound semiconductor that generates fluorescence by irradiation with excitation light.
A signal processing circuit 3 comprises an A/D converter 31 and a noise removal circuit 32. The A/D converter 31 converts an electric signal Va outputted from a photodetector 2 in response to the input of photons to time-series data Da including a plurality of digital signal values. The noise removal circuit 32 evaluates, for each of the plurality of digital signal values, whether a difference value between a digital signal value and the digital signal value preceding the digital signal value satisfies a threshold value condition indicating the presence of a component based on the input of photons. The noise removal circuit 32 replaces each of the plurality of digital signal values with a prescribed value in a first period that does not include a component based on the input of photons. The noise removal circuit 32 determines the first period on the basis of the evaluation result.
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
G01J 11/00 - Mesure des caractéristiques d'impulsions lumineuses individuelles ou de trains d'impulsions lumineuses
H10F 30/22 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes
13.
SIGNAL PROCESSING CIRCUIT AND SIGNAL PROCESSING METHOD
A signal processing circuit 3 is provided with an A/D converter 31 and a noise reduction circuit 32. The A/D converter 31 converts an electric signal Va output from a photodetector 2 in response to the input of photons into time-series data Da including a plurality of digital signal values. The noise reduction circuit 32 determines whether or not each of the plurality of digital signal values satisfies a threshold condition indicating the presence of a component based on the input of the photons. The noise reduction circuit 32 replaces each of the plurality of digital signal values with a predetermined value in a first period. The noise reduction circuit 32 sets a period excluding a second period as the first period. The second period is a period including a digital signal value determined to satisfy the threshold condition among the plurality of digital signal values and at least one digital signal value before and after said digital signal value.
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
G01J 11/00 - Mesure des caractéristiques d'impulsions lumineuses individuelles ou de trains d'impulsions lumineuses
H10F 30/22 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes
14.
RADIATION IMAGING APPARATUS AND RADIATION INSPECTION APPARATUS
A radiation imaging apparatus comprising: a sensor unit including a plurality of pixels that are arranged two-dimensionally and generate signals corresponding to radiation; and a sensor control unit for driving the sensor unit for time delay integration, wherein the sensor unit includes a first region that is composed of some of the pixels and is driven by the sensor control unit at a first scan rate, and a second region that is composed of some of the other pixels and is driven by the sensor control unit at a second scan rate different from the first scan rate.
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
15.
RADIOGRAPHIC INSPECTION DEVICE AND RADIOGRAPHIC INSPECTION METHOD
A radiographic inspection device 1 comprises: a sensor unit 10 that includes a plurality of pixels 11 that generate signals that correspond to radiation R from a radiation generator 2; a sensor control unit 21 that drives the sensor unit 10 using time delay integration; and a control device 5 that outputs position information Pii for an object OJ in the direction from the radiation generator 2 toward the sensor unit 10 on the basis of the signals. The sensor unit 10 has a first region 101 that is formed from a portion of the pixels 11a and is driven by the sensor control unit 21 at a first scan rate and a second region 102 that is formed from another portion of the pixels 11b and is driven by the sensor control unit 21 at a second scan rate that is different from the first scan rate. The control device 5 outputs the position information Pii on the basis of the signals generated at both the pixels 11a in the first region 101 and the pixels 11b in the second region 102.
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
16.
LIGHT DETECTION APPARATUS AND LIGHT DETECTION METHOD
A light detection apparatus 1 comprises a light sensor 21 and a circuit. The light sensor 21 is an electron tube and has a housing, a photoelectric surface, and a detection unit. The housing maintains an internal vacuum. The photoelectric surface is disposed in the housing and converts photons into photoelectrons. The detection unit is disposed in the housing, and multiplies the photoelectrons and outputs a current signal. The circuit generates time-series data Da of a digital signal on the basis of a current signal Ja from the light sensor 21. The circuit includes an I/V conversion circuit 22, an A/D converter 31, and a noise reduction circuit 32. The I/V conversion circuit 22 converts the current signal Ja into an analog voltage signal Va. The A/D converter 31 converts the analog voltage signal Va into the time-series data Da. The noise reduction circuit 32 reduces a noise component included in the time-series data Da.
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
H01J 40/12 - Éléments de circuits structuralement associés au tube
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
This optical waveguide element is provided with: a substrate with a photonic crystal structure; and a core that is disposed above part of a surface of the substrate in a first direction following the surface, and that extends along a second direction following the surface and intersecting the first direction. The core receives incident light at an end on one side in the second direction and emits the light from an end on the other side in the second direction. The substrate includes: a base layer; and a plurality of columnar regions that are distributed in two dimensions along the surface within the base layer and that comprise photonic crystal slabs. When the columnar regions are viewed from a third direction that intersects the surface, the size of the columnar regions changes in the second direction.
This laser processing method comprises: a preparation step for preparing an object; a first formation step for forming a first modified region inside a substrate along a line by causing laser light to be incident on the substrate from a second surface of the object; and a second formation step for forming a second modified region inside the substrate along the line by causing laser light to be incident on the substrate from the second surface. In the second formation step, a second modified region is formed between the first modified region and the second surface such that a crack reaches the second surface from the first modified region at a first portion of the line.
B23K 26/02 - Mise en place ou surveillance de la pièce à travailler, p. ex. par rapport au point d'impactAlignement, pointage ou focalisation du faisceau laser
B23K 26/03 - Observation, p. ex. surveillance de la pièce à travailler
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
A light source device according to the present invention comprises: a light-emitting sealed body which has a sealed container that has a discharge gas sealed therein and a pair of electrodes that face each other in the sealed container; an emission unit which emits laser light; and an optical system which condenses the laser light emitted from the emission unit such that a light-condensing region of the laser light is positioned between the pair of electrodes. The optical system condenses the laser light such that the light-condensing region in a cross-section perpendicular to the optical axis of the laser light has an elongated shape.
H01J 65/04 - Lampes à atmosphère gazeuse portée à la luminescence par un champ électromagnétique extérieur ou par une radiation corpusculaire extérieure, p. ex. lampe indicatrice
This photodetection element (1) comprises a semiconductor substrate (11) provided with a plurality of avalanche photodiodes (APD) each electrically connected to a corresponding quenching element (R1) and operating in Geiger mode. The semiconductor substrate (11) includes a substrate layer (12), and a first semiconductor layer (13) and a second semiconductor layer (14) which have a first conductivity type. Each of the plurality of avalanche photodiodes (APD) includes a first semiconductor region (21) and a second semiconductor region (23). The first semiconductor region (21) is disposed in the first semiconductor layer (13) and has a second conductivity type different from the first conductivity type. The second semiconductor region (23) is disposed in the first semiconductor layer (13) so as to be positioned between the first semiconductor region (21) and the second semiconductor layer (14), is bonded to the first semiconductor region (21) so that the first semiconductor region (21) and the first semiconductor layer (13) are not in contact with each other, and has the second conductivity type. The impurity concentration of the first semiconductor layer (13) is higher than the impurity concentration of the second semiconductor layer (14).
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
H10F 30/221 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel étant une homojunction PN
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10F 77/14 - Forme des corps semi-conducteursFormes, dimensions relatives ou dispositions des régions semi-conductrices au sein des corps semi-conducteurs
H10F 77/122 - Matériaux actifs comportant uniquement des matériaux du groupe IV
A photodetection element (1) comprises a semiconductor substrate (11) provided with a plurality of avalanche photodiodes (APD) each electrically connected to a corresponding quenching element (R1) and operating in Geiger mode. The semiconductor substrate (11) includes a substrate layer (12) and a first epitaxial semiconductor layer (13) and second epitaxial semiconductor layer (14) that have a first conductivity type. Each of the plurality of avalanche photodiodes (APD) includes a first semiconductor region (21) and a second semiconductor region (22). The first semiconductor region (21) is disposed in the first epitaxial semiconductor layer (13) and has a second conductivity type different from the first conductivity type. The second semiconductor region (22) is disposed in the first epitaxial semiconductor layer (13) so as to be positioned between the first semiconductor region (21) and the second epitaxial semiconductor layer (14), and has the first conductivity type. The impurity concentration of the first epitaxial semiconductor layer (13) is higher than the impurity concentration of the second epitaxial semiconductor layer (14).
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
H10F 30/221 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel étant une homojunction PN
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10F 77/14 - Forme des corps semi-conducteursFormes, dimensions relatives ou dispositions des régions semi-conductrices au sein des corps semi-conducteurs
H10F 77/122 - Matériaux actifs comportant uniquement des matériaux du groupe IV
23.
LASER PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND LASER PROCESSING DEVICE
This laser processing method is provided with: a first processing step which performs laser processing along a first planned formation surface; and a second processing step which performs laser processing along a second planned formation surface. In the first and second processing steps, the laser light is shaped so that the focused region of the laser light has a longitudinal direction when viewed from the Z direction, and the longitudinal direction intersects a processing progress direction. In the first processing step, laser processing is performed under a first processing condition for extending a crack from a modified region along the first planned formation surface, and in the second processing step, laser processing is performed under a second processing condition for extending a crack from the modified region along the second planned formation surface. An inclination angle of the second planned formation surface is larger than an inclination angle of the first planned formation surface.
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
B23K 26/064 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p. ex. lentilles, miroirs ou prismes
B23K 26/073 - Détermination de la configuration du spot laser
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p. ex. par des outils animés d'un mouvement alternatif
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p. ex. cloisonnement en zones séparées
24.
FILM THICKNESS MEASUREMENT DEVICE AND FILM THICKNESS MEASUREMENT METHOD
A film thickness measurement device 1 includes: a light source unit 10 that outputs, toward a sample 100, inspection light having a wavelength distribution within a predetermined wavelength region; a dichroic mirror 22 that has a stepwise filter characteristic whereby light transmittance changes in a stepwise manner at an edge wavelength within the predetermined wavelength region; area sensors 23, 24 that respectively receive, from incident light which is the inspection light reflected by the sample 100, transmitted light transmitted through the dichroic mirror 22 and reflected light reflected by the dichroic mirror 22, and that output luminance data of the transmitted light and luminance data of the reflected light; and a calculation unit 32 that acquires a film thickness of the sample 100 using the luminance data of the transmitted light and the luminance data of the reflected light.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
An inspection device comprising: a light source unit that outputs inspection light; a filter unit that includes an optical element having stepwise filter characteristics in which the transmittance of light changes stepwise at an edge wavelength within a prescribed wavelength region; a photodetection unit that receives, from among incident light from an object, first light that is one of transmitted light transmitted through the optical element and reflected light reflected by the optical element, and second light that includes at least the other of the transmitted light and the reflected light, and outputs luminance data of the first light and luminance data of the second light; a data generation unit that generates characteristic data for the incident light using the luminance data of the transmitted light and the luminance data of the reflected light based on the luminance data of the first light and the luminance data of the second light; and an identification unit that identifies the material of foreign matter on the basis of the characteristic data.
G01N 21/89 - Recherche de la présence de criques, de défauts ou de souillures dans un matériau mobile, p. ex. du papier, des textiles
G01N 21/3563 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solidesPréparation des échantillons à cet effet
A laser processing device 1 comprises a storage unit for storing a balance parameter that is set for each item of information relating to the position of a focal point and that is a correction parameter for correcting a calculation formula in order to generate a second branch pattern for bringing an actual measured output value of each branch light detected by a detecting unit 17 closer to a target output value, and a control unit 9, wherein the control unit 9 is configured to execute: selection processing for selecting a balance parameter to be applied, on the basis of information relating to the positions of a first focal point, a second focal point, and a third focal point; correction processing for correcting the calculation formula on the basis of the selected balance parameter; and display processing for generating a second branch pattern on the basis of the corrected calculation formula, and setting and displaying the generated second branch pattern in a reflection type spatial light modulator 34 for a processing process.
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
B23K 26/067 - Division du faisceau en faisceaux multiples, p. ex. foyers multiples
A semiconductor laser element (1) comprises: a semiconductor substrate (2) formed of GaAs; a plurality of laser structures (4); a tunnel junction layer (5); a first reflective film (8) disposed on first end surfaces (4a) of the plurality of laser structures (4); and a second reflective film (9) disposed on second end surfaces (4b) of the plurality of laser structures (4). The semiconductor laser element (1) includes: an n-type carrier block layer (46) disposed between an active region (41) and an n-type clad layer (44) and having a thickness smaller than the thickness of the n-type clad layer (44); and a p-type carrier block layer (47) disposed between the active region (41) and the p-type clad layer (45) and having a thickness smaller than the thickness of the p-type clad layer (45).
H01S 5/125 - Lasers à réflecteurs de Bragg répartis [lasers DBR]
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
28.
IMAGE ACQUISITION DEVICE AND IMAGE ACQUISITION METHOD
This image acquisition device acquires an image of a sample held in a sample holding member. The image acquisition device comprises: a placement table having a plurality of placement spaces in which a storage member for storing a plurality of sample holding members can be placed; an adapter that can be attached to an upper portion or a lower portion of at least one placement space among the plurality of placement spaces; an adapter detection unit that detects the presence or absence of the adapter attached to the placement space; and a display unit that displays, on the basis of the detection result of the adapter detection unit, information about the placement space to which the adapter is attached among the plurality of placement spaces.
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
This spectroscopic module comprises: a spectroscopic unit having a Fabry-Perot interference filter and a housing that accommodates the Fabry-Perot interference filter; a package having a body part and a cover part; and a fastening shaft member inserted into a hole formed in the package. The cover part includes an aperture member in which an aperture and a positioning part for positioning the aperture member with respect to the housing are formed, and an intermediate member. The hole is a first hole configured to include a hole part formed in the aperture member and a hole part formed in the intermediate member. The hole part formed in the aperture member is an enlarged hole part having an inner edge larger than the outer edge of the fastening shaft member in a cross-section perpendicular to the axial direction of the fastening shaft member.
G01J 3/26 - Production du spectreMonochromateurs en utilisant une réflexion multiple, p. ex. interféromètre de Fabry-Perot, filtre à interférences variables
This optical semiconductor device (1) comprises a lead (2), an optical semiconductor element (3), and a sealing member (7). The sealing member (7) includes a thick portion (40), a first thin portion (41) disposed on one side in a second direction with respect to the thick portion (40), and a second thin portion (42) disposed on the other side in the second direction with respect to the thick portion (40). The lead (2) includes a first portion (31) protruding from the thick portion (40) when viewed from one side in a first direction. The first portion (31) is in contact with the first thin portion (41) and extends to one side in the second direction along the first thin portion (41). The first portion (31) has a front surface (31a) exposed on one side in the first direction and a rear surface (31b) exposed on the other side in the first direction. The width (L1) of the first thin portion (41) in the second direction is greater than the width (W10) of the first portion (31) in a third direction.
H10F 30/22 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes
This radiation detector comprises: a shielding member having formed therein an opening through which radiation passes; a light conversion unit that has a scintillator including a side surface facing the opening in a Z-axis direction and a surface extending along the Z-axis direction and an X-axis direction intersecting the Z-axis direction; a light detection unit having a plurality of pixels arranged two-dimensionally along a plane facing the aforementioned surface; and a processing unit that is electrically connected to the plurality of pixels and processes output signals from the plurality of pixels. The plurality of pixels are arranged in a plurality of columns, each of the columns extending along the Z-axis direction.
G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01N 23/10 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le matériau étant confiné dans un récipient, p. ex. scanners de bagage à rayons X
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
32.
ELECTRON DETECTOR, CHARGED PARTICLE DETECTOR, AND MASS SPECTROMETER
This electron detector comprises an electron detection unit that detects incident electrons and that outputs an electric signal, and a housing part that houses the electron detection unit. The electron detection unit includes an AD that detects electrons, a wiring board on which the AD is mounted, the wiring board disposed on one side of the AD in the Z direction, and an amplifier that amplifies a detection signal outputted from the AD. The housing part includes a first metal part that has an opening facing the AD on the other side of the AD in the Z direction and that faces the electron detection unit on the other side of the AD, and a second metal part surrounding the side surface of the wiring board.
This diffraction device (100) comprises: a supply unit (10) for supplying a gas (V) to a prescribed region (R); a first irradiation unit (20) for irradiating the prescribed region (R) with first laser light (L1) and second laser light (L2); and a second irradiation unit (40) for irradiating the prescribed region (R) with third laser light (L3). The gas (V) contains molecules that resonantly absorb the first laser light (L1), the second laser light (L2), and the third laser light (L3). The first irradiation unit (20) forms interference fringes in the prescribed region (R) by irradiating the prescribed region (R) with the first laser light (L1) and the second laser light (L2) so as to intersect each other in the prescribed region (R), thereby forming compression waves in the gas (V) in the prescribed region (R) due to the interference fringes.
G02F 1/29 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de la position ou de la direction des rayons lumineux, c.-à-d. déflexion
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
An illumination unit 31 illuminates an object to be observed with first illumination light along a first illumination direction under a dark-field illumination condition and illuminates the object to be observed with second illumination light along a second illumination direction under a bright-field illumination condition in a first illumination mode, and illuminates the object to be observed with the second illumination light along the second illumination direction under the bright-field illumination condition in a second illumination mode. A processing unit 60 generates a first complex amplitude image on the basis of an intensity image at each of a plurality of focal planes acquired in the first illumination mode, generates a second complex amplitude image on the basis of an intensity image at each of a plurality of focal planes acquired in the second illumination mode, and generates a complex amplitude image when the object to be observed is illuminated with light along the first illumination direction under the dark-field illumination condition on the basis of the difference between the first complex amplitude image and the second complex amplitude image. Thus, an observation device capable of easily acquiring a complex amplitude image of an object to be observed in dark-field illumination with a simple configuration is achieved.
This observation device 1 comprises a light source 11A, a polarization-dependent spatial modulation element 26, a polarization camera 29, and a processing unit 40. The light source 11A outputs polarized spatially coherent light. The polarization-dependent spatial modulation element 26 is provided on a Fourier plane for an imaging surface 29a of the polarization camera 29, receives light that passes through an observation target S, spatially modulates the polarization state of the light, and outputs the spatially modulated light. The polarization camera 29 acquires an intensity image of each of a plurality of polarization components on the imaging surface 29a. The processing unit 40 obtains the complex amplitude distribution of the light at the time of input to the polarization-dependent spatial modulation element 26 on the basis of: the intensity image of each of the plurality of polarization components; and the relationship between the complex amplitude distribution of the light at the time of input to the polarization-dependent spatial modulation element 26 and the complex amplitude distribution of the light on the imaging surface 29a. Thus, an observation device and an observation method are achieved whereby a complex amplitude image of an observation target can be easily acquired with a simple configuration even when light scattering in the observation target is intense.
A magnetic sensor module 1 is provided with a cell 4 in which alkali metal is sealed, a pump laser light source 6 that emits pump light L toward the inside of the cell 4, a photodiode 7 that detects the pump light L having passed through the cell 4 and generates a magnetic field detection signal, a temperature sensor 13 that incorporates a resistance temperature detector and outputs a detection signal obtained by detecting the temperature of the cell 4, and an amplifier 54 that amplifies the detection signal output from the temperature sensor 13.
G01R 33/26 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique pour la mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques utilisant le pompage optique
37.
SEMICONDUCTOR LASER BAR UNIT, LAYERED STRUCTURE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER BAR UNIT
A semiconductor laser bar unit 4 includes: a semiconductor laser bar 11 that has an emission end surface 15 extending in a long direction D1 and a short direction D2, and has a plurality of laser emission points 16 arranged along the long direction D1 of the emission end surface 15; a long lens 31 that is present extending along the long direction D1 so as to face the plurality of laser emission points 16; and a positioning member 41 that positions the lens 31 relative to the emission end surface 15, wherein the positioning member 41 is positioned in a non-arrangement region R2 excluding an arrangement region R1 for the plurality of laser emission points 16 on the emission end surface 15, and is joined to the emission end surface 15 and the lens 31 in the non-arrangement region R2.
A first light-receiving element of this array sensor outputs, from an output unit 32, a first output signal corresponding to the intensity of incident light. A second light-receiving element of the array sensor has a phototransistor structure including a gate electrode, a source electrode, a drain electrode, and a photoelectric conversion unit. In the second light-receiving element, electric current flows between the source electrode and the drain electrode in accordance with the intensity of light incident on the photoelectric conversion unit, at a gain corresponding to a voltage applied to the gate electrode. The output unit of the first light-receiving element is electrically connected to the gate electrode of the second light-receiving element, and the gain of the second light-receiving element changes in accordance with the first output signal outputted from the output unit of the first light-receiving element. A signal based on at least a second output signal from the second light-receiving element is outputted.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10F 30/282 - Transistors à effet de champ à grille isolée [IGFET], p. ex. phototransistors MISFET [transistor à effet de champ métal-isolant-semi-conducteur]
This electron emission element emits electrons in response to incidence of electromagnetic waves, and comprises: a support body having a support surface formed of an electrically insulating material; a plurality of three-dimensional structures disposed on the support surface and formed of a conductive material; and a functional layer disposed on the plurality of three-dimensional structures and including a carbon layer formed of a material containing carbon.
H01J 9/12 - Fabrication des électrodes ou des systèmes d'électrodes des cathodes photo-émissivesFabrication des électrodes ou des systèmes d'électrodes des électrodes à émission secondaire
An optical waveform measurement device 1 comprises a light source 10, a waveform generation unit 20, a measurement unit 30, and a computation unit 40. On the basis of a light pulse outputted from the light source 10, the waveform generation unit 20 generates and outputs target light for which a time waveform is to be measured and a reference single light pulse. The target light and the reference single light pulse are inputted into the measurement unit 30 at a time interval that is longer than the time widths of the light. The measurement unit 30 is an autocorrelator and measures the shape of the autocorrelation of a time waveform for light that includes the target light and the reference single light pulse. The computation unit 40 finds a time waveform for the target light on the basis of the portion of the autocorrelation shape that represents the autocorrelation between a time waveform for the target light and a time waveform for the reference single light pulse. The present invention thereby provides a device and a method that make it possible to easily and accurately measure a time waveform for target light.
This wavelength filter comprises: an input waveguide into which input light is input; a first ring resonator having a first coupler and a second coupler; an intermediate waveguide connected to the second coupler; a second ring resonator having a third coupler and a fourth coupler; and an output waveguide connected to the fourth coupler. The first ring resonator and the second ring resonator are configured to have a specific wavelength region, which is a wavelength region in which, as the wavelength increases, the transmittance and the half-value width of a transmission peak of the first ring resonator exhibit wavelength dependence in which the transmittance and the half-value width monotonically increase or decrease, while the transmittance and the half-value width of a transmission peak of the second ring resonator exhibit wavelength dependence in which the transmittance and the half-value width monotonically change in a direction opposite to that of the first ring resonator.
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
42.
PULSED LIGHT GENERATION DEVICE AND PULSED LIGHT GENERATION METHOD
According to the present disclosure, it is possible to provide a pulsed light generation device and a pulsed light generation method, which are able to suppress the occurrence of ASE while also suppressing formation of a plurality of pulsed light beams due to modulation using a soliton self-frequency shift, and to reliably amplify the modulated pulsed light. A pulsed light generation device (100) comprises: an oscillation unit (1) for oscillating pulsed light; a bandwidth-widening unit (2) that is arranged on the downstream side of the oscillation unit (1) in the optical path of the pulsed light and broadens the spectrum of the pulsed light; a modulation unit (5) that is arranged on the downstream side of the bandwidth-widening unit (2) in the optical path of the pulsed light and uses a soliton self-frequency shift to modulate the wavelength of the pulsed light; a branching unit (8) that is arranged on the downstream side of the bandwidth-widening unit (2) in the optical path of the pulsed light and splits the pulsed light; and amplification units (11, 21) that are arranged on the downstream side of the modulation unit (5) and the branching unit (8) in the optical path of the pulsed light and amplify the pulsed light.
This pulsed light generation device comprises: an oscillation unit (1); a broadband-forming unit (2); a modulation unit (6) that is configured to include a polarization-maintaining fiber and that modulates pulsed light; and a polarization-changing unit (5) that changes the polarization direction of the pulsed light to a direction that intersects both the slow axis direction and the fast axis direction of the polarization-maintaining fiber. The modulation unit (6) uses a soliton self-frequency shift to modulate the wavelength of pulsed light (L), the polarization direction of which has been changed by the polarization-changing unit (5), and forms first pulsed light (L1) that is pulsed light in the polarization direction along the slow axis direction and second pulsed light (L2) that is pulsed light in the polarization direction along the fast axis direction.
A pulse light generation device (1A) includes: an oscillator (oscillator) (2) that causes oscillation of pulsed light as seed light (L0); a fiber amplifier (broadbanding unit) (3) that broadens the spectrum of the seed light (L0) caused to oscillate by the oscillator (2); a soliton shift fiber (wavelength modulation unit) (7) that uses a soliton self-frequency shift to modulate the wavelength of the seed light (L0) whose spectrum has been broadened by the fiber amplifier (3), thereby generating dispersed waves (LD) and soliton waves (LS) originating from the seed light (L0); and a parametric amplification unit (12) that performs parametric amplification of relatively long-wavelength pulsed light by using relatively short-wavelength pulsed light from among the soliton waves (LS), dispersed waves (LD), seed light (L0), and their harmonics.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
H01S 3/30 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet utilisant des effets de diffusion, p. ex. l'effet Brillouin ou Raman stimulé
45.
PULSED LIGHT GENERATION DEVICE AND PULSED LIGHT GENERATION METHOD
This pulsed light generation device (1A) comprises: an oscillator (oscillation unit) (2) that oscillates pulsed light as seed light (L0); a fiber amplifier (band widening unit) (3) that widens the spectrum of the seed light (L0) oscillated by the oscillator (2); a soliton shift fiber (wavelength modulation unit) (6) that modulates, using a soliton self-frequency shift, the wavelength of the seed light (L0), the spectrum of which has been widened by the fiber amplifier (3), the soliton shift fiber (wavelength modulation unit) (6) generating a soliton wave (LS) and a dispersion wave (LD) caused by the seed light (L0); and a fiber amplifier (dispersion wave amplification unit) (9) that amplifies the dispersion wave (LD) generated by the soliton shift fiber (6).
This pulsed light generation device comprises: an oscillation unit that oscillates pulsed light; a control unit that is disposed on the downstream side of the oscillation unit in an optical path of the pulsed light and controls a time width of the pulsed light; and a modulation unit that is disposed on the downstream side of the control unit in the optical path of the pulsed light, modulates the wavelength of the pulsed light by using soliton self-frequency shift, and forms one or a plurality of beams of pulsed light having different wavelengths. The control unit controls the time width of the pulsed light so that the number of the beams of pulsed light formed by the modulation unit becomes a prescribed number.
G02F 1/37 - Optique non linéaire pour la génération de l'harmonique deux
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
This charged particle detector comprises: a channel-type first multiplication unit having a channel unit that emits electrons in response to incidence of charged particles, multiplies the emitted electrons, and emits the multiplied electrons; a discrete-type second multiplication unit that is disposed to face the first multiplication unit in a prescribed direction, and multiplies the electrons emitted from the channel unit of the first multiplication unit; and an anode that collects the multiplied electrons. The second multiplication unit includes a reduction unit formed such that, on at least one cross section along the prescribed direction, the width decreases toward the first multiplication unit in a direction orthogonal to the prescribed direction. The reduction unit has a pair of surfaces formed to approach each other closer toward the first multiplication unit on the cross section. The second multiplication unit multiplies the electrons that are emitted from the channel unit of the first multiplication unit and are incident on the pair of surfaces.
This optically pumped magnetic sensor comprises: a laser unit that includes a laser element and a support member; a cell unit that includes a cell in which an alkali metal is enclosed; a photodetector; and a support that defines a space in an optical path of a laser light in which at least a portion of the laser element side is located. The support member has a first surface perpendicular to an optical axis of the laser element. The support has a second surface perpendicular to the optical axis of the laser element. The support member and the support are shaped such that the support member is movable relative to the support in a direction perpendicular to the optical axis of the laser element and in a state in which the first surface and the second surface face each other. The support member and the support are fixed to each other in a state in which the first surface and the second surface face each other.
G01R 33/26 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique pour la mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques utilisant le pompage optique
G01R 33/032 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs magnéto-optiques, p. ex. par effet Faraday
This optically pumped magnetometer comprises: a laser unit including a laser element; a cell unit including a cell in which an alkali metal is sealed; a photodetector; a polarization unit which is disposed on an optical path of laser light from the laser element to the cell and which includes a polarization element that emits incident laser light as circularly polarized light; and a support member supporting the polarization unit. The polarization unit and the support member are shaped so that the polarization unit can rotate about the optical axis of the polarization element as a central axis with respect to the support member while the polarization unit is supported by the support member, and are fixed to each other while the polarization unit is supported by the support member.
G01R 33/26 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique pour la mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques utilisant le pompage optique
G01R 33/032 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs magnéto-optiques, p. ex. par effet Faraday
This charged particle detector comprises: a microchannel plate having an input surface through which charged particles enter, a multiplication unit that performs electron multiplication on the basis of input of the charged particles while maintaining positional information of the charged particles with respect to the input surface, and an output surface through which electrons multiplied by the multiplication unit are outputted; a resistive anode that, when electrons outputted through the output surface enters therein, outputs a charge signal corresponding to the entering position of the electrons; and an anode that is disposed in a spatial region between the output surface and the resistive anode, has an electron passage unit through which the electrons outputted through the output surface are allowed to pass, and is for collecting the electrons outputted from the resistive anode.
G01N 23/2273 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en mesurant l'effet photo-électrique, p. ex. microscopie d'émission photo-électronique [PEEM] en mesurant le spectre photo-électronique, p. ex. spectroscopie électronique pour l’analyse chimique [ESCA] ou spectroscopie photo-électronique par rayon X [XPS]
H01J 43/24 - Dynodes à gradient de potentiel le long de leurs surfaces
51.
RADIOGRAPH ACQUISITION DEVICE AND RADIOGRAPH ACQUISITION METHOD
An X-ray image acquisition device 1 comprises: an X-ray source 2 having an electron gun 21 and a target 22; a control unit 3 that controls an incident position of an electron beam EB between a first incident position and a second incident position; an X-ray detection unit 4 that acquires an X-ray image of an object OJ; and a processing unit 5 that processes a first image acquired as an X-ray image in a first state where the incident position is the first incident position, and that processes a second image acquired as an X-ray image in a second state where the incident position is the second incident position. By controlling the incident position between the first incident position and the second incident position on the basis of the magnification ratio of the X-rays from the object OJ to the X-ray detection unit 4, the control unit 3 moves at least a part of the image of the object OJ so as to extend across the boundary between adjacent pixels 41 between the first state and the second state.
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
An inspection device 1 comprises an X-ray source 2 that includes an electron gun 21 and a target 22, a control unit 3 that controls the incidence position of an electron beam EB between a first incidence position Y1 and a second incidence position Y2, an X-ray detection unit 4 that acquires an X-ray image of an object OJ, and an inspection unit 51 that inspects the object OJ on the basis of the X-ray image. The X-ray detection unit 4 acquires a first image as the X-ray image when the incidence position of the electron beam EB is the first incidence position Y1 and acquires a second image as the X-ray image when the incidence position of the electron beam EB is the second incidence position Y2, and the inspection unit 51 inspects the object OJ on the basis of at least one of the first image and the second image.
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
53.
RADIOGRAPHIC IMAGE ACQUISITION DEVICE AND RADIOGRAPHIC IMAGE ACQUISITION METHOD
122, the control unit 3 controls the incident position of the electron beam EB between the first incident position and the second incident position, thereby moving at least a part of the image of the object OJ between the first state and the second state so as to straddle the boundary between adjacent pixels 41.
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
In the present invention, a light detection part of a light detection element has a first light detection region, a second light detection region, and a third light detection region. A spectroscopic unit causes light in a first wavelength range to be incident on the first light detection region, causes light in a second wavelength range at wavelengths longer than the first wavelength range to be incident on the second light detection region, and causes light in a third wavelength range at wavelengths longer than the second wavelength range to be incident on the third light detection region. A coverage ratio of a silicon nitride film in the third light detection region is higher than a coverage ratio of the silicon nitride film in the first light detection region. A coverage ratio of the silicon nitride film in the second light detection region is higher than or equal to the coverage ratio of the silicon nitride film in the first light detection region and lower than or equal to the coverage ratio of the silicon nitride film in the third light detection region.
This X-ray inspection method includes: a first control step for controlling an incident position of an electron beam EB from a first incident position Y1 to a second incident position Y2 on a target 22 for generating X-rays when the electron beam EB is incident; a second irradiation step for emitting the electron beam EB toward the second incidence position Y2 in the target 22 and irradiating a structure provided on a mounting substrate SB with X-rays; and a second image acquisition step for acquiring a second image which is an X-ray image of the structure provided on the mounting substrate SB.
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
This method for manufacturing a semiconductor device includes: a pad formation step for forming a connection electrode pad, an inspection electrode pad, and an electrode pad connection portion on a first substrate; an inspection step for performing an electrical inspection by bringing an inspection probe into contact with the inspection electrode pad after the pad formation step; a removal step for removing at least the region of the inspection electrode pad that came into contact with the inspection probe in the inspection step after the inspection step; a connection step for electrically connecting the connection electrode pad to a second element via a bump after the removal step; and a coating step for coating at least the bump with a coating having an insulating property after the removal step.
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
An assembly device for a slide scanner. The assembly device is adapted to a pathological slide scanner having a slide cassette storage basket (3) for storing a plurality of slides (5), and comprises: a frame (4), a placement compartment (2) and a loading cassette (1), wherein the loading cassette (1) comprises two first side plates, a connecting plate (12) and a first bottom plate (13); the placement compartment (2) comprises two second side plates, a top plate (22) and a second bottom plate (23); the two first side plates and the top plate (22) are each provided with a first magnetic attraction structure; the first bottom plate (13) and the second bottom plate (23) are each provided with a second magnetic attraction structure; and the loading cassette (1) and the placement compartment (2) are magnetically fixed by means of first magnetic attraction structures and second magnetic attraction structures.
B23P 19/04 - Machines effectuant simplement l'assemblage ou la séparation de pièces ou d'objets métalliques entre eux ou des pièces métalliques avec des pièces non métalliques, que cela entraîne ou non une certaine déformationOutils ou dispositifs à cet effet dans la mesure où ils ne sont pas prévus dans d'autres classes pour assembler ou séparer des pièces
B65D 25/10 - Dispositifs pour placer les objets dans les réceptacles
This array sensor comprises a plurality of detection regions which are one-dimensionally or two-dimensionally arranged. The detection regions each have a plurality of sub-regions. The plurality of sub-regions each have a light-receiving element part which is provided with a gate electrode, a source electrode, a drain electrode, and a photoelectric conversion part. The photoelectric conversion part is provided with a two-dimensional layered substance which is electrically connected to the source electrode and the drain electrode. In the light-receiving element part, current flows between the source electrode and the drain electrode in accordance with the magnitude of the voltage that is applied to the gate electrode and the intensity of light that is incident on the photoelectric conversion part. The plurality of sub-regions each have different time response characteristics. In each of the detection regions, signals from the plurality of sub-regions are combined and output as an output signal.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
H10F 30/282 - Transistors à effet de champ à grille isolée [IGFET], p. ex. phototransistors MISFET [transistor à effet de champ métal-isolant-semi-conducteur]
NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY (Japon)
Inventeur(s)
Sunada Satoshi
Mase Mitsuhito
Hiramitsu Jun
Abrégé
This physical quantity change detection device comprises: a structure that outputs a speckle pattern of light when light enters the structure, wherein the speckle pattern that is output from the structure changes when the physical quantity relating to the structure changes due to an external environment; and a processing unit that has an optical neural network unit, which performs neural network calculation on input light and outputs output light representing the calculation result, and that acquires the value corresponding to the change in the physical quantity by acquisition processing including inputting at least a part of the speckle pattern to the optical neural network unit.
G01L 1/24 - Mesure des forces ou des contraintes, en général en mesurant les variations des propriétés optiques du matériau quand il est soumis à une contrainte, p. ex. par l'analyse des contraintes par photo-élasticité
G01D 5/353 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens optiques, c.-à-d. utilisant de la lumière infrarouge, visible ou ultraviolette avec atténuation ou obturation complète ou partielle des rayons lumineux les rayons lumineux étant détectés par des cellules photo-électriques en modifiant les caractéristiques de transmission d'une fibre optique
G01K 11/32 - Mesure de la température basée sur les variations physiques ou chimiques, n'entrant pas dans les groupes , , ou utilisant des changements dans la transmittance, la diffusion ou la luminescence dans les fibres optiques
G06N 3/067 - Réalisation physique, c.-à-d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens optiques
B25J 15/08 - Têtes de préhension avec des éléments en forme de doigts
The present invention provides a loading box, which carries a slide box storage basket for accommodating a plurality of slides, and an inwardly recessed recess is formed on a side surface of the slide box storage basket. The loading box comprises: two first side plates, which are respectively configured to extend along a first direction and a second direction intersecting the first direction, the two first side plates facing one another in a third direction intersecting the first direction and the second direction; a connecting plate, which is arranged on a side of the two first side plates in the first direction, connects the two first side plates along the third direction, and, together with the two first side plates, forms an opening for inserting the slide box storage basket; and a first bottom plate, which is connected to the two first side plates on the other side in the first direction, bosses being respectively formed, in a mode corresponding to the recess of the slide box storage basket, on the sides of the two first side plates facing one another, and the bosses extending along the first direction.
This film thickness measurement device comprises: a light measurement unit that irradiates a sample with first light having a first wavelength, detects the first light reflected by the sample, and outputs a first signal pertaining to calculation of the wavelength center of gravity of the first light; a storage unit that stores first relationship information indicating the relationship between the wavelength center of gravity and the film thickness of the sample at the first wavelength; and an analysis unit. The analysis unit derives at least one among: a wavelength direction distance which is the difference between the calculated wavelength center of gravity of the first light and a wavelength center of gravity corresponding to a film thickness candidate specified from the film thickness candidate and the first relationship information; and a film thickness direction distance which is the difference between the film thickness derived from the calculated wavelength center of gravity of the first light and the first relationship information and the film thickness candidate, and derives the film thickness of the sample on the basis of the derivation result.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
This light source device emits light along a prescribed optical axis, and comprises a housing and a light-emitting unit disposed inside the housing. The housing includes a wall part in which a first opening including the optical axis is formed. The wall part is further formed with a first hole and a second hole that open to at least the outer surface of the wall part. When viewed from a first direction along the optical axis, the first hole and the second hole have an asymmetrical positional relationship about the optical axis.
This laser processing device comprises: a disposition part on which an object is disposed; a laser emission part for emitting a first laser beam and a second laser beam; and a transmissive member, which is disposed on optical axes of the first laser beam and the second laser beam between the object disposed on the disposition part and the laser emission part, and which transmits the first laser beam and the second laser beam. The laser processing device condenses the first laser beam and the second laser beam so that, when viewed from the optical axis direction of the first laser beam, at least part of a region where intensity in a second emission region reaches a peak is located outside a region where intensity in a first emission region reaches a peak.
B23K 26/16 - Enlèvement de résidus, p. ex. des particules ou des vapeurs produites pendant le traitement de la pièce à travailler
B23K 26/064 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p. ex. lentilles, miroirs ou prismes
B23K 26/067 - Division du faisceau en faisceaux multiples, p. ex. foyers multiples
B23K 26/082 - Systèmes de balayage, c.-à-d. des dispositifs comportant un mouvement relatif entre le faisceau laser et la tête du laser
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
In this observation method for observing a processing cross-section, the surface of an object is irradiated with a laser beam to form, whereby a processing area having a processing cross-section that intersects the surface is formed on the object. The observation method comprises: a processing step in which, when the surface is perpendicular to a first direction and the processing area includes a plurality of lines arranged in a second direction with each line extending in a third direction, the region of irradiation by the laser beam is moved along each of the plurality of lines while the laser beam is condensed toward the object in a state in which the incidence direction of the laser beam onto the surface is inclined to one side in the second direction with respect to the first direction; and an observation step in which an end surface of the other side of the processing area in the second direction is observed as the processing cross-section.
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
This observation method is for irradiating a surface of an object with a laser beam to form a processing area having a processing cross section intersecting the surface on the object and observing the processing cross section, the observation method comprising: a processing step for, when the surface is perpendicular to a first direction and the processing area includes a plurality of lines arranged in a second direction and each extending in a third direction, moving an irradiation region of the laser beam along each of the plurality of lines while condensing the laser beam toward the object in a state where an incident direction of the laser beam on the surface is inclined to one side in the second direction with respect to the first direction; and an observing step for observing an end face of the processing area on the one side in the second direction as the processing cross section.
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
66.
LASER PROCESSING DEVICE, MICROSCOPE DEVICE, AND LASER PROCESSING METHOD
This laser processing device comprises: a laser output unit for outputting laser light having a pulse width of 1 ps or less; a polarization adjustment unit that receives incidence of the laser light output from the laser output unit, adjusts the polarization direction of the laser light such that the laser light includes a first component in a first polarization direction and a second component in a second polarization direction orthogonal to the first polarization direction, and emits the laser light after the adjustment; a spatial light modulator that receives incidence of the laser light emitted from the polarization adjustment unit, modulates the first component of the laser light and emits the modulated first component as modulated light, and emits the second component of the laser light as unmodulated light; a light focusing unit that focuses the modulated light and the unmodulated light, which were emitted from the spatial light modulator, onto an object such that one continuous irradiated region including the modulated light and the unmodulated light is formed on the object; and a scanning unit for scanning the irradiated region on the object.
B23K 26/03 - Observation, p. ex. surveillance de la pièce à travailler
B23K 26/062 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples par commande directe du faisceau laser
B23K 26/064 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p. ex. lentilles, miroirs ou prismes
B23K 26/082 - Systèmes de balayage, c.-à-d. des dispositifs comportant un mouvement relatif entre le faisceau laser et la tête du laser
B23K 26/352 - Travail par rayon laser, p. ex. soudage, découpage ou perçage pour le traitement de surface
67.
LASER PROCESSING DEVICE, MICROSCOPE DEVICE, AND LASER PROCESSING METHOD
This laser processing device comprises: a placement part in which a target object is placed; a laser irradiation part for irradiating the object with a first laser beam and a second laser beam; and a transmission member which is disposed on the optical axes of the first laser beam and the second laser beam between the target object placed in the placement part and the laser irradiation part, and transmits the first laser beam and the second laser beam. The laser irradiation part has a scanning part for performing ablation processing on the target object by using the first laser beam and ablation processing on particles, generated by the ablation processing on the target object, by using the second laser beam.
This inspection device is for inspecting a PIC and comprises: an XY stage on which the PIC is placed; a condensing optical system that is disposed so as to face the XY stage and condenses light output from the PIC; an intensity/wavelength information acquisition unit that acquires spatial distribution data of intensity information and wavelength information of the light condensed by the condensing optical system; a storage unit that stores CAD data, which is design information of the PIC; and a computer that generates an inspection image on the basis of the spatial distribution data and the CAD data.
A photodetection element (1) comprises a substrate (2), an insulating layer (3), and a semiconductor layer (4) having a first main surface (4a) and a second main surface (4b). The semiconductor layer (4) has: a first semiconductor region (41); a second semiconductor region (42) that surrounds the first semiconductor region (41); a third semiconductor region (43) that is positioned closer to the second main surface (4b), as compared with the first semiconductor region (41) and the second semiconductor region (42), and that overlaps the first semiconductor region (41); and a fourth semiconductor region (44) that electrically connects the second semiconductor region (42) and the third semiconductor region (43). A hole (46) extending from the first main surface (4a) to reach the third semiconductor region (43) is formed in the semiconductor layer (4). The hole (46) has a truncated quadrangular pyramid shape or a quadrangular pyramid shape. The fourth semiconductor region (44) is formed along the lateral surface of the hole (46).
H10F 30/221 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel étant une homojunction PN
H10F 77/14 - Forme des corps semi-conducteursFormes, dimensions relatives ou dispositions des régions semi-conductrices au sein des corps semi-conducteurs
70.
LASER PROCESSING SYSTEM AND LASER PROCESSING METHOD
This laser processing system is for performing laser processing for forming a modified region on an object by irradiating the object with a laser beam, and the system includes: an input reception unit that receives input of the thickness of the object in a Z direction intersecting the surface of the object upon which the laser beam falls incident, and receives input of processing information including at least one of the processing time of the laser processing and the processing quality of the laser processing; a type determination unit that, on the basis of the processing information received by the input reception unit, determines the processing type of the laser processing according to the processing information; and a first condition determination unit that, on the basis of the thickness received by the input reception unit and the processing type determined by the type determination unit, determines a first processing condition, which is a processing condition constituting a criterion for the laser processing.
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
B23K 26/00 - Travail par rayon laser, p. ex. soudage, découpage ou perçage
B23Q 15/00 - Commande automatique ou régulation du mouvement d'avance, de la vitesse de coupe ou de la position tant de l'outil que de la pièce
71.
SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE
A semiconductor laser device 1 comprises: a heat sink 2 that has a mounting surface M on one surface side; and a stacked structure 3 that is formed by stacking a plurality of semiconductor laser bar units 4 in which semiconductor laser bars 11 are mounted on sub-mounts 12, wherein the stacked structure 3 is fixed to the heat sink 2 by joining each of the sub-mounts 12 to the mounting surface M with an insulation member 23 and a first solder layer 21 interposed therebetween in a state in which each of the semiconductor laser bars 11 is separated from the mounting surface M, an insulation member 23 is individually provided on each of the sub-mounts 12, and the first solder layer 21 extends over the mounting surface M so as to extend over each of the sub-mounts 12.
This conveyance device conveys, in an image acquisition device provided with an imaging unit and a placement table, a sample holding member between the imaging unit and a storage member placed on the placement table. This conveyance device comprises: a base part; a body part disposed on the base part; a holding part provided to the body part; and a rotation mechanism that moves the holding part between a first position and a second position by rotating the body part with respect to the base part about a rotation axis along the vertical direction. When moving the holding part from the first position to the second position, the rotation mechanism tilts the body part so that the sample holding member held by the holding part is in a posture inclined with respect to the horizontal plane as the body part rotates.
Provided is a laser processing method for irradiating a target with laser light to perform processing along a virtual surface inside the target which is along a laser light incidence surface of the target, said laser processing method comprising: a first processing step for forming a plurality of modification regions along the virtual surface in a first portion, which is part of the target when viewed from a Z direction that intersects the incidence surface, by irradiating the first portion of the target with laser light along the virtual surface; and a second processing step for, after the first processing step, forming a plurality of modification regions along the virtual surface in a second portion, which is another part of the target when viewed from Z direction, by irradiating the second portion of the target with laser light along the virtual surface.
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
This semiconductor laser element manufacturing method is for forming a semiconductor mesa (M) on a substrate (2) by etching an object (10) that includes a substrate (2), which has a main surface (2s), and a semiconductor lamination part (30), which includes an active layer for a semiconductor laser and which is laminated on the main surface (2s) along a first direction (Z-axis direction) intersecting the main surface (2s), the semiconductor laser element manufacturing method comprising: a first step (S104) for forming a first resist (R2) on a surface (30s) of the semiconductor lamination part (30); a second step (S105) for forming a second resist (R3) from the first resist (R2) by heat-treating the first resist (R2) after the first step (S104); and a third step (S106) for forming the semiconductor mesa (M) by using the second resist (R3) to etch the object (10).
This laser processing method comprises: a first step for forming a protective film on the surface of a device layer of an object; a second step for forming a plurality of grooves in the protective film and the device layer along a street region through irradiation with a first laser beam; a third step for forming a modified region in a substrate of the object along the street region through irradiation with a second laser beam; and a fourth step for removing the protective film from the surface of the device layer 22. The first laser light includes a plurality of processing light beams and a plurality of higher-order light beams, the light beams being branched by diffraction. The energy of each of the plurality of processing light beams is greater than the energy of each of the plurality of higher-order light beams.
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p. ex. cloisonnement en zones séparées
B23K 26/067 - Division du faisceau en faisceaux multiples, p. ex. foyers multiples
B23K 26/18 - Travail par rayon laser, p. ex. soudage, découpage ou perçage utilisant des couches absorbantes sur la pièce à travailler, p. ex. afin de marquer ou de protéger
B23K 26/364 - Gravure au laser pour faire une rainure ou une saignée, p. ex. pour tracer une rainure d'amorce de rupture
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
An analysis device 1A includes: an X-ray irradiation device 11 for irradiating a semiconductor device D with an X-ray R intensity-modulated by a modulation signal Sm having a first frequency F1; a detector 15 for detecting a state change of the semiconductor device D due to irradiation with the X-ray R and outputting a detection signal Sd based on a detection result; and a signal processing device 16 for performing signal processing on the detection signal Sd based on the first frequency F1.
This analysis device 1 comprises: a tester 10 that inputs a test signal St having a prescribed frequency to a semiconductor device D; an X-ray irradiation device 11 that irradiates the semiconductor device D with X-rays R; a detector 15 that detects X-rays (transmitted X-rays Rt) from the semiconductor device D due to the irradiation with the X-rays R and outputs a detection signal Sd on the basis of the detected result; and a signal processing device 16 that performs, on the detection signal Sd, signal processing based on the prescribed frequency.
This spectroscopic unit comprises: a Fabry-Pérot interference filter having a pair of mirror parts the distance between which is variable; an optical system having a first lens that condenses light from an object onto the Fabry-Pérot interference filter; and a light detection element that detects light transmitted through the Fabry-Pérot interference filter. In a case where the distance from the first lens to the object is 5 cm and a circular region having a diameter of 1 cm on the surface of the object is defined as a visual field region, the optical system is configured to cause, among light incident on the first lens from the visual field region, light having a spread angle less than or equal to a prescribed angle, which is less than or equal to 1 degree, to be incident on a light transmission region of the Fabry-Pérot interference filter without causing light having a spread angle greater than 1 degree to be incident on the light transmission region.
G01J 3/26 - Production du spectreMonochromateurs en utilisant une réflexion multiple, p. ex. interféromètre de Fabry-Perot, filtre à interférences variables
An analysis device 1 comprises: an LSI tester 3 that inputs a test pattern signal TP to a semiconductor device D and outputs a trigger signal indicating start timing of the test pattern signal TP and a test result signal TR indicating a test result, either Pass or Fail, of the semiconductor device D; an SSPD 13 that detects light emitted from a field of view set on the semiconductor device D and outputs a detection signal; and a processing unit 19 that processes the trigger signal and the detection signal to measure elapsed time from the start timing to the timing of the detection signal, generates light emission timing data indicating the elapsed time, classifies the light emission timing data into either Pass or Fail on the basis of the test result signal TR that is output from the LSI tester 3, and calculates, for each Pass and Fail, a total of frequency of the elapsed time indicating multiple light emission timing data when the test pattern signal TP is repeatedly input.
A dosimeter (1) comprises a radiation detection unit (2) a first amplification unit (3) a capacitor (11), an A/D converter, and a first comparator. The radiation detection unit (2) outputs a current signal of a magnitude corresponding to the intensity of an incident radiation pulse RP each time the radiation pulse RP is incident. The first amplification unit (3) converts the current signal into a voltage signal. The first amplification unit (3) includes a first amplifier (31) and a first reset switch (34). The first comparator is connected to the first amplification unit (3) via the capacitor (11), and outputs a first comparison result signal indicating the result of a comparison between the voltage signal and a first threshold. The A/D converter is connected to the first amplification unit (3) via the capacitor (11), and generates a digital signal indicating the magnitude of the voltage signal. The A/D converter starts a conversion operation on the basis of the first comparison result signal indicating that the voltage signal exceeds the first threshold.
A signal processing circuit according to the present invention comprises a processing unit that: has a photoelectric surface that emits electrons in response to incident light; converts, into a digital signal at a prescribed sampling frequency, a target signal corresponding to an output signal from a vacuum tube sensor that outputs an output signal corresponding to the amount of incident light; and derives an output value for each prescribed measurement period. The processing unit is configured such that when deriving the output value of a measurement period, the processing unit can execute an abnormal value handling process in which the number of pieces of data corresponding to the pulse width of an abnormal value signal appearing in the target signal are excluded in descending order of the signal value from a plurality of pieces of data included in the target signal in the measurement period, and the output value is derived from the remaining plurality of pieces of data.
This placement mount for an image acquisition device has disposed thereon a plurality of accommodation members capable of accommodating a plurality of sample retention members. The placement mount comprises: a base part that is provided so as to be capable of rotating about a rotation axis extending in the vertical direction and has, on the upper surface thereof, a plurality of placement regions on which the plurality of accommodation members are respectively placed; and a positioning part that is provided to the base part and restricts the movement of the plurality of accommodation members to the rotation axis side. The placement regions include a first flat surface along a horizontal plane, and a first edge section forming a step positioned above the first flat surface. At least a portion of the first flat surface is positioned on the rotation axis side from the first edge section.
In the present invention, a noise removal system comprises a processing unit that: processes a target signal corresponding to an output signal which corresponds to the amount of entry light and is outputted from a vacuum tube sensor which has a photoelectric surface for emitting electrons in response to entry light and outputs the output signal; and derives an output value for each prescribed measurement time. The processing unit is configured to be able to execute an abnormal value handling process for: dividing a measurement period into n (n is an integer of 2 or more) sections; deriving signal values in the n sections from the target signal; and when deriving an output value in the measurement period from the signal values in the n sections, deriving the output value from the signal values in the n sections so that the magnitude of the maximum signal value that is largest among the signal values does not affect the magnitude of the output value.
H01J 40/16 - Tubes à décharge photo-électrique n'impliquant pas l'ionisation d'un gaz à cathode photo-émissive, p. ex. cellule photo-électrique alcaline
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
A light source device (1) comprises: an optical integrated circuit (10) which has a substrate (11); an optical element (5a) which is formed on the substrate (11) and outputs measurement light having a predetermined wavelength; an output unit (6) which is formed on the substrate (11) and outputs the measurement light to the outside of the substrate (11); a light separation unit (21) to which a portion of the measurement light outputted from the output unit (6) is inputted, and which separates the portion of the measurement light into first light and second light at a predetermined separation rate, the separation rate changing monotonously in a predetermined wavelength region; a light detection unit (25, 26) which detects the first light and/or the second light; and a computation unit (9b) which computes the total light amount and centroid wavelength of the measurement light on the basis of at least the detection result of the light detection unit (25, 26).
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
A light source unit (1) is provided with a semiconductor optical amplifier (10), a filter unit (30), a Michelson interferometer (40) and a detector (44). The Michelson interferometer (40) has: a coupler (41) which, with a predetermined branching ratio, branches light (L2) from a filter unit (30) inputted to a first port (41a) into a first waveguide (51) connected to a second port (41b) and a second waveguide (52) connected to a third port (41c) and having an optical path length different from that of the first waveguide (51); a first mirror (42) which returns, to the coupler, at least some of first branched light (Lb1) outputted from the second port (41b); and a second mirror (43) which returns, to the coupler, at least some of second branched light (Lb2) outputted from the third port. The detector (44) detects interference light among the light returned to the coupler (41) from the first mirror (42) and the second mirror (43). The branching ratio of the coupler (41) is set to an unequal ratio.
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
G02B 6/125 - Courbures, branchements ou intersections
H01S 5/50 - Structures amplificatrices non prévues dans les groupes
This flash lamp comprises: a housing including a bottom wall; and a plurality of electrically conductive pins. The plurality of electrically conductive pins include a first electrically conductive pin and a second electrically conductive pin arranged in a second direction perpendicular to a first direction. The first electrically conductive pin includes a first electrode portion disposed inside the housing, a first embedded portion embedded in the bottom wall, and a first terminal portion disposed outside the housing. The second electrically conductive pin includes a second electrode portion disposed inside the housing, a second embedded portion embedded in the bottom wall, and a second terminal portion disposed outside the housing. At least one of the first electrically conductive pin and the second electrically conductive pin is bent within the bottom wall such that the distance between the end of the first terminal portion on the bottom wall side and the end of the second terminal portion on the bottom wall side is greater than the distance between the first electrode portion and the second electrode portion.
This substance sensing device comprises: an optical integrated circuit having a substrate; a ring resonator formed on the substrate, the ring resonator having a first waveguide, a ring waveguide provided with a plurality of receptors to which a substance is bonded, and a second waveguide; a light splitting unit to which measurement light traveling through the first waveguide is input and that splits the measurement light into first light and second light at a predetermined splitting ratio, which monotonically changes over a predetermined wavelength range; a light detection unit that detects at least one of the first light and the second light; and a calculation unit that acquires information relating to the centroid wavelength of the measurement light on the basis of at least the result of the detection by the light detection unit, and then acquires information relating to the amount of the substance bonded to the plurality of receptors on the basis of the information relating to the centroid wavelength.
G01N 21/41 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
88.
FILM THICKNESS MEASUREMENT METHOD AND FILM THICKNESS MEASUREMENT DEVICE
This film thickness measurement method comprises a first image acquisition step for acquiring a BG image of an object for background correction in the presence of an intervening part, a second image acquisition step for acquiring a sample image of an object S3 to be measured in the presence of the intervening part, a conversion step for converting the BG image in the presence of the intervening part into a BG image of the object for background correction in the absence of the intervening part on the basis of the ratio of the integrated intensity of light in the presence of the intervening part and the integrated intensity of light in the absence of the intervening part, and a third image acquisition step for acquiring a film thickness distribution image by subtracting the luminance value of the BG image of the object for background correction in the absence of the intervening part from the luminance value of the sample image of the object to be measured in the presence of the intervening part.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
This image acquisition device operates in a state of being connected to an external device. The image acquisition device comprises: an imaging unit that acquires an imaging signal by detecting light; and a control unit that generates image data on the basis of the imaging signal. The imaging unit is configured to automatically transition to a detection-capable state in which light can be detected, in response to power supply from an external device. The imaging unit has an image sensor and a fiber optic plate disposed on the image sensor. The control unit has: a processor that executes a program for generating image data, which is data in a file format processable by the external device, on the basis of the imaging signal; a memory in which the program is expanded; and an external connection unit that outputs the image data to the external device.
A61B 6/51 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations spécialement adaptés à des parties du corps spécifiquesAppareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations spécialement adaptés à des applications cliniques spécifiques à la technique dentaire
A61B 6/42 - Agencements pour détecter des radiations spécialement adaptés au diagnostic par radiations
This intraoral imaging system comprises an imaging unit and a control unit. The imaging unit executes monitor detection, and executes imaging detection a plurality of times. The control unit executes first processing, for acquiring a plurality of imaging signals, by controlling the imaging unit so as to execute imaging detection a plurality of times. The control unit determines the timing of the start and end of the imaging detection on the basis of a first monitor signal, in a case of controlling the imaging unit so as to execute the imaging detection for the first time in the first processing, and determines the timing of at least one of the start and end of the imaging detection on the basis of at least one of the imaging time information and a second monitor signal when controlling the imaging unit so as to execute the imaging detection for each of the second and subsequent times in the first processing.
A61B 6/00 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations
A61B 6/02 - Agencements pour établir un diagnostic dans des plans différents successifsDiagnostic stéréoscopique utilisant des radiations
A61B 6/51 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations spécialement adaptés à des parties du corps spécifiquesAppareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations spécialement adaptés à des applications cliniques spécifiques à la technique dentaire
This intraoral imaging device is a device that operates by being connected to an external device. The intraoral imaging device comprises an imaging unit that acquires an imaging signal relating to an object by detecting radiation transmitted through the object, and a control unit that generates image data relating to the object on the basis of the imaging signal. The imaging unit is configured to automatically transition to a detectable state in which radiation transmitted through the object can be detected, in response to power supply from an external device. The control unit has a processor that executes a program for generating image data, which is data in a file format that can be processed by an external device, on the basis of the imaging signal, memory to which the program is loaded, and an external connection unit that outputs the image data to the external device.
A61B 6/51 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations spécialement adaptés à des parties du corps spécifiquesAppareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations spécialement adaptés à des applications cliniques spécifiques à la technique dentaire
A61B 6/42 - Agencements pour détecter des radiations spécialement adaptés au diagnostic par radiations
This observation device comprises a light source unit including an annular illumination unit that outputs observation light having an annular illumination pattern, an irradiation unit that includes an objective lens having an observation surface of an observation object as the focal plane thereof and irradiates the observation object with the observation light, and an imaging unit that images the observation surface. The imaging unit is capable of detecting reflected light of the observation light that has passed through the irradiation unit and entered the inside of the observation object, the reflected light having passed through the observation surface and been emitted from the observation object, and passed through the irradiation unit again. The light source unit includes a focus adjustment unit capable of adjusting the focus of the light source unit so that the conjugate plane of the annular illumination unit coincides with the pupil plane of the objective lens in the optical path of the reflected light of the observation light.
This interference observation device comprises: a light source; an interference optical system that splits light outputted from the light source into first light and second light and outputs interference light of the first light, which is reflected by an object of observation or transmitted through the object of observation and then reflected, with the second light, which is reflected by a reference mirror; an imaging element; a processing unit; and a mode switching unit that switches an observation mode of an observation surface of the object of observation between an interface observation mode, which is an observation mode in which the first light is reflected by the observation surface, and an internal observation mode, which is an observation mode in which the first light is transmitted through the observation surface and reflected by a reflective surface separate from the observation surface. The mode switching unit switches the observation mode between the interface observation mode and the internal observation mode by controlling the optical path length of the second light such that the optical path length of the second light in the internal observation mode is longer than the optical path length of the second light in the interface observation mode.
This cis-isomerization method is a method for cis-isomerizing a carotenoid compound, and comprises a suspension preparation step S1, a light irradiation step S2, and a residual particle removal step S3. In the suspension preparation step S1, a suspension containing particles of the carotenoid compound dispersed in a solvent is prepared. In the light irradiation step S2, the suspension prepared in the suspension preparation step S1 is irradiated with pulse laser light to cis-isomerize particles of the carotenoid compound dispersed in the solvent and dissolve the particles in the solvent. In the residual particle removal step S3, particles remaining and dispersed in the solvent are removed. According to the method, it is possible to realize a cis-isomerization method that allows cis-isomerization of a carotenoid compound in a short time and with high efficiency.
C07C 5/23 - Réarrangement des liaisons carbone-carbone non saturées
A23L 5/44 - Adjonction de colorants ou de pigments, p. ex. en combinaison avec des azurants optiques en utilisant des colorants ou des pigments organiques d'origine naturelle, leurs doublons artificiels ou leurs dérivés en utilisant des caroténoïdes ou des xanthophylles
A23L 33/10 - Modification de la qualité nutritive des alimentsProduits diététiquesLeur préparation ou leur traitement en utilisant des additifs
C07C 403/24 - Dérivés du cyclohexane ou d'un cyclohexène, comportant une chaîne latérale avec une partie non saturée d'au moins quatre atomes de carbone en ligne, ladite partie étant directement attachée aux cycles cyclohexane ou cyclohexène, p. ex. vitamine A, bêta-carotène, bêta-ionone ayant des chaînes latérales substituées par des cycles non aromatiques à six chaînons, p. ex. bêta-carotène
A boost rectification circuit 1 comprises: a transformer 21 that inputs an AC voltage to a primary winding 21a; a full-wave rectification circuit unit 3 that generates a first DC voltage VDC1 by rectifying an AC voltage generated in a secondary winding 21b; a first half-wave rectification-type CW circuit unit 7; and a second half-wave rectification-type CW circuit unit 8. The first half-wave rectification-type CW circuit unit 7 rectifies and boosts the AC voltage generated in the secondary winding 21b. The second half-wave rectification-type CW circuit unit 8 rectifies and boosts the AC voltage generated in the secondary winding 21b with a phase opposite to that of the first half-wave rectification-type CW circuit unit 7. An output voltage from the first half-wave rectification-type CW circuit unit 7 and an output voltage from the second half-wave rectification-type CW circuit unit 8 are added to the first DC voltage VDC1 in a first series circuit unit 4 to generate a second DC voltage VDC2.
H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire
Provided is a high-voltage power supply (100) wherein: a double-wave rectification circuit unit (3) includes a capacitor (36) that is connected to one end of a first series circuit unit (4), and a charging circuit (37) that charges the capacitor (36) with an electric charge; a first half-wave rectification CW circuit unit (10) rectifies and boosts an AC voltage that is generated in a secondary winding (21b); a second half-wave rectification CW circuit unit (20) rectifies and boosts the AC voltage that is generated in the secondary winding (21b) in the opposite phase from that of the first half-wave rectification CW circuit unit (10); an output voltage from the first half-wave rectification CW circuit unit (10) and an output voltage from the second half-wave rectification CW circuit unit (20) are added to a first DC voltage VDC1 in the first series circuit unit (4) to generate a second DC voltage VDC2; and a control unit (8) instructs a timing at which the charging circuit (37) charges the capacitor (36) with the electric charge.
H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire
This X-ray source comprises: a photoelectric surface that emits photoelectrons in response to incidence of pulsed light; a target that generates X-rays in response to incidence of the photoelectrons emitted from the photoelectric surface; and a control electrode unit disposed between the photoelectric surface and the target. The control electrode unit has: a focusing electrode that is disposed so as to face the photoelectric surface and focuses the photoelectrons emitted from the photoelectric surface; and an acceleration electrode that is disposed between the focusing electrode and the target and accelerates the photoelectrons.
H01J 35/14 - Dispositifs de concentration, de focalisation ou d'orientation du rayon cathodique
H01J 35/30 - Tubes, dans lesquels le point d'impact du rayon cathodique sur l'anode ou l'anticathode est déplaçable par rapport à la surface de celles-ci par déviation du rayon cathodique
H05G 1/00 - Appareils à rayons X utilisant des tubes à rayons XCircuits pour ces appareils
A solid-state imaging device 1A comprises a potential gradient formation unit 20A. The potential gradient formation unit 20A forms, on a photoelectric conversion unit 10A, a potential gradient in which a potential gradually changes from one end 201 to the other end 202 in a second direction D2. The potential gradient formation unit 20A has a plurality of resistive gate parts 21 and a plurality of ventilation parts 22. The plurality of resistive gate parts 21 respectively cover a plurality of pixel regions 11. The plurality of ventilation parts 22 are respectively provided on a plurality of pixel separation regions 12. The plurality of ventilation parts 22 each have an elongated shape in which the length thereof along the second direction D2 is greater than the width thereof along a first direction D1. The average value, in the second direction D2, of the width W4 of each ventilation part 22 is smaller than the average value, in the second direction D2, of the width W3 along the first direction D1 of a portion of each resistive gate part 21 which is sandwiched between the plurality of ventilation parts 22.
This power supply circuit for a flash discharge tube comprises: a voltage supply source having one output terminal; a branching part which branches wiring connected to the output terminal into a first wiring and a second wiring; a main discharge capacitor connected to the first wiring; a trigger capacitor connected to the second wiring; a first rectifier element which is provided between the branching part in the first wiring and the main discharge capacitor and which passes a current from the branching part side to the main discharge capacitor side; and a second rectifier element which is provided between the branching part in the second wiring and the trigger capacitor and which passes a current from the branching part side to the trigger capacitor side.
H05B 41/30 - Circuits dans lesquels la lampe est alimentée par impulsions, p. ex. lampe éclair
G03B 15/05 - Combinaisons d'appareils photographiques avec flash électroniqueFlash électronique
H02M 3/28 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire
H02M 9/04 - Transformation d'une puissance d'entrée en courant continu ou courant alternatif en une puissance de sortie de choc avec une puissance d'entrée en courant continu en utilisant des condensateurs à accumulation
This optically pumped magnetic sensor module comprises: a cell in which an alkali metal is sealed; and a coil unit that generates a magnetic field to act on the cell. The coil unit has a support frame body formed in a shape conforming to a rectangular parallelepiped and disposed so as to surround the cell, and a plurality of coils provided on the support frame body. The support frame body includes a pair of first surfaces facing each other in a first direction, and a pair of second surfaces facing each other in a second direction perpendicular to the first direction. The plurality of coils include a pair of first coils. One of the pair of first coils extends from one of the pair of first surfaces over both of the pair of second surfaces. The other of the pair of first coils extends from the other of the pair of first surfaces over both of the pair of second surfaces.
G01R 33/26 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique pour la mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques utilisant le pompage optique
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