Provided is an interference observation device comprising: a light source configured to output light; an interference optical system having a reference mirror and configured to split the light emitted from the light source into first light and second light and output interference light between the first light reflected by an observation object and the second light reflected by the reference mirror; an imaging element configured to detect the interference light; a processing unit configured to acquire an interference image on the basis of a detection result of the imaging element and acquire a degree of disorder of an image of a foreign substance region attached to the observation object in the interference image; and an output unit configured to output information about the degree of disorder acquired by the processing unit.
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G01N 21/45 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant des méthodes interférométriquesRéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant les méthodes de Schlieren
An optical module includes: a support having a bottom wall part and a side wall part; a light receiving element and a light emitting element; a light transmitting member disposed on the side wall part; and a resin member disposed on a surface of the light transmitting member. The surface of the light transmitting member has an inner region and an outer region. The resin member is integrally formed over the inner region and the outer region. A refractive index of the resin member with respect to light having a center wavelength of light emitted from the light emitting element is smaller than a refractive index of the light transmitting member with respect to the light having the center wavelength. The light transmitting member is bonded to the side wall part by a portion of the resin member formed on the outer region.
G01D 5/347 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens optiques, c.-à-d. utilisant de la lumière infrarouge, visible ou ultraviolette avec atténuation ou obturation complète ou partielle des rayons lumineux les rayons lumineux étant détectés par des cellules photo-électriques en utilisant le déplacement d'échelles de codage
The present invention comprises: a plurality of laser elements; and an optical integrated circuit element including a plurality of unit circuits provided on a substrate so as to correspond to the plurality of laser elements. Each of the plurality of unit circuits has a light input/output end face facing a first end face, which is one end face in a resonance direction of the corresponding laser element, an input/output waveguide, and an optical feedback unit configured to change the wavelength of output light within a predetermined wavelength range by guiding light of a predetermined wavelength incident from the corresponding laser element and returning the light of the predetermined wavelength to the laser element. The corresponding laser element and the light input/output end face are spaced apart by a predetermined distance in the resonance direction. The predetermined distance is from 100 nm to 5 μm.
According to this laser processing method, an inspection beam Lb is radiated to a planned irradiation spot K of processing laser light Lw on a surface Sa of an object S, pre-processing spot data D1 about a pre-processing surface state of the object is acquired, an optimum parameter D2 of the processing laser light Lw is estimated using an estimation program that outputs a result of estimating the optimum parameter of the processing laser light Lw in accordance with an input of the pre-processing spot data D1, and the planned irradiation spot K is irradiated with the processing laser light Lw on the basis of an optimum parameter estimation result D2.
A discharge tube includes a container; an anode portion; a cathode portion having a plate shape that emits photoelectrons in response to an an anode electrode portion extending along a facing direction in which the anode portion and the cathode portion face each other; and a cathode electrode portion extending along the facing direction. When a side on which the anode portion is located with respect to the cathode portion in the facing direction is defined as one side, and a side opposite the one side is defined as the other side, the anode electrode portion extends from the anode portion to the other side, and the cathode electrode portion extends from the cathode portion to the other side. A joint region of the cathode portion with the cathode electrode portion is exposed from the anode portion when viewed from the one side in the facing direction.
A quantum bit detection module according to one aspect of the present invention comprises an image sensor and a sensor control unit. The image sensor is configured to be capable of presetting a first region and a second region, which are mutually different, as exposure regions in an imaging region. The sensor control unit has a first trigger input terminal, to which a first trigger signal is input, and a second trigger input terminal, to which a second trigger signal different from the first trigger signal is input. The image sensor performs imaging while switching between the first region and the second region in response to the first trigger signal and the second trigger signal.
G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p. ex. couplage ou commande de qubit
The present invention comprises: a laser element that has a semiconductor laminate which includes a first substrate and an active layer formed on the first substrate; and an optical integrated circuit element that has a second substrate and a unit circuit which is provided on the second substrate. The unit circuit has: a light input/output end surface that is opposite from a first end surface of the laser element with a space therebetween; an input/output waveguide that extends from the light input/output end surface; and a light feedback part that is configured to transmit light of a prescribed wavelength which has entered from the laser element and alter, within a prescribed wavelength range, the wavelength of output light by returning light of a prescribed wavelength to the laser element. The size of the space in the resonance direction is smaller than the thickness of the active layer and the thickness of the input/output waveguide at the light input/output end surface in the thickness of the second substrate.
H01S 5/06 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/34 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
H01S 5/02325 - Composants intégrés mécaniquement aux éléments de montage ou aux micro-bancs optiques
This light source unit comprises: a plurality of laser elements; and a photonic integrated circuit element including a substrate and a plurality of circuit cells provided on the substrate in a manner corresponding to the plurality of laser elements. Each of the plurality of circuit cells has: a light input/output end face facing a first end face which is one end face of the corresponding laser element in the resonance direction; an input/output waveguide; and a light feedback part configured to change the wavelength of output light within a prescribed wavelength range by guiding light of a prescribed wavelength having entered from the corresponding laser element and returning the light of the prescribed wavelength to the laser element. The corresponding laser element and the light input/output end face are separated with a space therebetween. The size of the space in the resonance direction is 1/4 or less of the shortest wavelength in the prescribed wavelength range.
This light source unit comprises: a plurality of laser elements; and an optical integrated circuit element including a substrate and a plurality of unit circuits provided on the substrate so as to correspond to the plurality of laser elements. Each of the plurality of unit circuits includes: an optical input/output end face facing a first end face, which is one end face of a corresponding laser element among the plurality of laser elements in the resonance direction; an input/output waveguide; and an optical feedback section configured to transmit light of a predetermined wavelength that is incident from the laser element, and to return light of the predetermined wavelength to the laser element, thereby varying the wavelength of the output light within a predetermined wavelength range. At least one of the plurality of laser elements outputs the return light returned to the laser element, as output light, from a second end face opposite to the first end face in the resonance direction.
inallinallall (t). Accordingly, it is possible to achieve an interference measurement device that is capable of analyzing the layer structure of a sample by using terahertz wave pulses and enables easy adjustment of an optical system.
G01N 21/3586 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant la lumière de l'infrarouge lointainCouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant un rayonnement térahertz par spectroscopie térahertz dans le domaine temporel [THz-TDS]
G01N 21/45 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant des méthodes interférométriquesRéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant les méthodes de Schlieren
11.
INTERFERENCE OBSERVATION DEVICE AND INTERFERENCE OBSERVATION METHOD
An interference observation device includes a light source; an interference optical system that includes a reference mirror, splits light output from the light source into a first light and a second light, and outputs interference light between the first light reflected by an observation object and the second light reflected by the reference mirror; an image sensor that detects the interference light; and a processing unit that acquires an interference image. The interference optical system includes a mechanism configured to change a focal condition of an optical path of the second light. The processing unit separates observation surface information and non-observation surface information based on a plurality of the interference images obtained when the focal condition of the optical path of the second light is changed in a state in which a focal point of the first light is aligned with an observation surface of the observation object.
A radiation imaging device according to an embodiment includes a sensor panel, a control board, a flexible printed circuit that connects the sensor panel and a back surface of the control board through a side of the control board, a circuit board on which a power supply circuit and an interface circuit are mounted, a first housing that houses the sensor panel, the control board, and the flexible printed circuit, a second housing that houses the circuit board, and a connection member that electrically connects the control board and the circuit board. A communication hole provided in the wall portion of the first housing is provided so as not to overlap with a portion of the flexible printed circuit from the end farthest from the control board in the second direction to the end connected to the control board when viewed from the first direction.
G01T 1/208 - Circuits spécialement adaptés aux détecteurs à scintillation, p. ex. à l'élément photomultiplicateur
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/95 - Ensembles de plusieurs dispositifs comportant au moins un dispositif intégré couvert par le groupe , p. ex. comportant des capteurs d’images intégrés
A light-emitting sealed body includes a housing including a first window configured to cause first light for maintaining the plasma to be incident on the plasma region and a second window configured to cause second light emitted from the plasma to be emitted from the plasma region, a first electrode having a first distal end facing the plasma region, a second electrode having a second distal end facing the plasma region, the second distal end facing the first distal end with the plasma region interposed therebetween, an insulating first holder holding the first electrode and fixed to the housing, and an insulating enclosure enclosing the plasma region, the first distal end, and the second distal end and having a first opening corresponding to the first window and a second opening corresponding to the second window. At least a part of the enclosure is provided to the first holder.
H01J 65/04 - Lampes à atmosphère gazeuse portée à la luminescence par un champ électromagnétique extérieur ou par une radiation corpusculaire extérieure, p. ex. lampe indicatrice
A sample support is a sample support for ionizing a sample. The sample support includes a substrate having a first surface, a second surface opposite to the first surface, and an irregular porous structure opening to at least the first surface. The porous structure is formed of a plurality of large particles connected to each other and a plurality of small particles having a diameter smaller than that of the large particles. At least a part of the plurality of small particles is held between two or more of the large particles constituting the first surface.
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p. ex. fermetures étanches au videDispositions pour le réglage externe des composants électronoptiques ou ionoptiques
15.
HEAT TRANSFER APPARATUS WITH MULTI-DIRECTIONAL HEAT FLOW
A bi-directional heat transfer apparatus comprises a heat spreader configured to attach to a device or apparatus. A plurality of thermoelectric coolers is mounted in thermal contact with a plurality of different surfaces of the heat spreader. A respective one of the plurality of fan-cooled heat sinks is mounted in thermal contact with a respective one of the plurality of thermoelectric coolers so that each of the respective ones of the plurality of fancooled heat sinks removes heat by convection cooling in a respective one of a plurality of directions.
This imaging device comprises: a plurality of drive power supply units that convert power supply voltage into driving direct-current voltage; and a gate driver that receives the driving direct-current voltage from the drive power supply units. One of the drive power supply units includes: a first voltage conversion portion that converts the power supply voltage into first direct-current voltage; a second voltage conversion portion that converts the first direct-current voltage into driving direct-current voltage; and a discharge circuit. The discharge circuit includes: a capacitive element that is charged using second direct-current voltage; and a second switch element that is driven by voltage across the capacitive element after the stop operation of the first voltage conversion portion is started, and that has one end connected to a first node between the second voltage conversion portion and the gate driver and has the other end connected to a reference potential line.
An image processing apparatus creates a measurement image in a measurement space different from a real space based on measurement data of a subject acquired by a measurement by using a tomography apparatus, inputs the measurement image to a CNN, and creates a tomographic image in the real space by the CNN. The CNN is based on a U-net structure including an encoder unit, a decoder unit, and a bottleneck unit, and further includes a projection connection unit. The projection connection unit performs projection processing from a sinogram space (the measurement space) to the real space on any one feature map in the encoder unit, and connects the feature map after performing the projection processing to the feature map of an equal size in the decoder unit.
An imaging apparatus comprising: a row selector selecting each row included in a first read-out region of a first imager and each row included in a second read-out region of a second imager; a first data generator generating first data in which electrical signals read out from the first read-out region and electrical signals read out from the second read-out region are alternately accumulated; a second data generator generating second data by rearranging the electrical signals read out from the first read-out region and rearranging the electrical signals read out from the second read-out region; and an extractor extracting third data corresponding to the region of interest from the second data.
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
H04N 25/40 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p. ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner
H04N 25/443 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p. ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner en lisant partiellement une matrice de capteurs SSIS en lisant les pixels de zones 2D sélectionnées de la matrice, p. ex. pour le fenêtrage ou le zoom numérique
A light-emitting sealed body includes a housing structure housing a gas for generating plasma. The housing structure includes a first window configured to cause first light for maintaining the plasma in a plasma region where the plasma is generated to be incident on the plasma region, a second window configured to emit second light emitted from the plasma from the plasma region, a third window facing the first window with the plasma region interposed therebetween and configured to emit the first light transmitted through the plasma from the plasma region, and a wall having a light shielding property and defining at least a light passage region of the third window.
A radiation detector has a scintillator array including a plurality of first scintillator blocks arranged in parallel with each other in a first layer; one second scintillator block arranged in a second layer so as to extend across each of the plurality of first scintillator blocks; a reflective member disposed between adjacent ones of the first scintillator blocks; a first optical discontinuity portion provided between each of the plurality of first scintillator blocks and the second scintillator block; and a light detection unit optically coupled to an end surface of one of the first scintillator blocks and an end surface of another of the first scintillator blocks.
A spectrally-shaped source includes a source that generates a round beam. An optical element transforms the round beam to a rectangular beam. An image forming dispersive device angularly disperses wavelengths and images the rectangular beam at a modulation plane. A pixelated SLM is illuminated by the dispersed wavelengths of the rectangular beam such that each column of illuminated pixels is illuminated by a different wavelength. Toroidal optics projects light directed from the SLM to an output plane and focuses the angularly dispersed wavelengths of the beam so that a selected portion of the optical beam is reflected toward the toroidal optic by the SLM. A controller instructs the pixelated SLM to selectively reflect the portion of the optical beam toward the toroidal optic and to selectively reflect another portion of the beam away from the toroidal optic so as to provide a desired spectral shape.
In a spectrometry device, an analysis unit corrects a first electric signal using a first correction coefficient to make a linearity characteristic of a first amplifier match with a reference linearity characteristic. The analysis unit corrects a second electric signal using a second correction coefficient to make a linearity characteristic of a second amplifier match with the reference linearity characteristic. The analysis unit generates first spectrum data based on the corrected first electric signal, and generates second spectrum data based on the corrected second electric signal. The analysis unit generates spectrum data of measurement target light based on the first spectrum data and the second spectrum data.
A laser beam source (1) outputs a laser beam (L). Optical amplifiers (AMP1-AMPn) are connected in series in multiple stages and amplify the laser beam L output from the laser beam source (1) in stages. Photodetectors (PD1-PDn) detect laser beams (L1-Ln) amplified by the optical amplifiers (AMP1-AMPn), and output detection signals (DET1-DETn) indicating the detection results. A control unit (2) sequentially acquires some or all of the waveforms of the laser beams (L1-Ln) amplified by the optical amplifiers (AMP1-AMPn) on the basis of the detection signals (DET1-DETn), and controls the waveform of the laser beam L output from the laser beam source (1) so that each of the acquired waveforms is a desired waveform, thereby shaping the waveform of the laser beam (Ln) amplified by the optical amplifiers (AMPn) so as to be a desired waveform.
H01S 3/10 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation
B23K 26/00 - Travail par rayon laser, p. ex. soudage, découpage ou perçage
B23K 26/0622 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples par commande directe du faisceau laser par impulsions de mise en forme
H01S 3/00 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p. ex. agencement en série de deux milieux actifs séparés
24.
IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD
An image processing apparatus includes an input image creation unit, a first operation unit, and a second operation unit, and creates a noise reduced image by reducing noise of a target image. The first operation unit includes a first CNN processing unit and a first CNN training unit, and performs processing of supervised pre-learning. A first input image is an image in which pixel values in a partial region are changed based on a training image. The second operation unit includes a second CNN processing unit and a second CNN training unit, and performs processing of unsupervised learning.
A light irradiation apparatus includes a light source configured to emit light, a light pipe configured to receive, as an input, the light emitted from the light source, and uniformize and output an illuminance distribution of the light, a diffusion plate configured to diffuse the light output from the light pipe, and a light pipe configured to receive, as an input, the light diffused by the diffusion plate, and uniformize and output an illuminance distribution of the light. That is, the light irradiation apparatus includes the two light pipes and the diffusion plate provided to be sandwiched between the two light pipes.
G02B 21/36 - Microscopes aménagés pour la photographie ou la projection
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
This laser peening method includes a placing step of placing an extension jig relative a workpiece W to form an extended surface formed by the extension jig in a region outside a surface Wa of the workpiece in a front view of a machining region K, a forming step of forming a water film P formed by a laminar flow over an irradiation position M2 of a laser beam L and at least a part of the extended surface by discharged water Pw directed to a target position M1, and a machining step of scanning the irradiation position M2 of the laser beam L and the target position M1 of the discharged water Pw with respect to the surface Wa of the workpiece W and irradiating the machining region K with the laser beam L through the water film P.
B23K 26/356 - Travail par rayon laser, p. ex. soudage, découpage ou perçage pour le traitement de surface par traitement par choc
B23K 26/082 - Systèmes de balayage, c.-à-d. des dispositifs comportant un mouvement relatif entre le faisceau laser et la tête du laser
B23K 26/146 - Travail par rayon laser, p. ex. soudage, découpage ou perçage en utilisant un écoulement de fluide, p. ex. un jet de gaz, associé au faisceau laserBuses à cet effet l'écoulement de fluide contenant un liquide
A light-emitting body according to the present invention converts an incident electron beam into fluorescence. The light-emitting body comprises a substrate that transmits fluorescence and a quantum well structure part that is formed on one surface of the substrate and emits fluorescence when struck by an electron beam. The quantum well structure part has a first wavelength layer that emits fluorescence of a first wavelength in response to being struck by an electron beam and a second wavelength layer that is layered on the first wavelength layer and emits fluorescence of a second wavelength that is shorter than the first wavelength in response to being struck by an electron beam.
G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
C09K 11/00 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
H01J 37/244 - DétecteursComposants ou circuits associés
This hemoglobin concentration measurement device comprises: a light output unit that outputs, to a living body, measurement light including at least light having a first wavelength and light having a second wavelength different from the first wavelength; a light detection unit that detects the measurement light transmitted through the living body; a signal acquisition unit that acquires, on the basis of a detection result of the light detection unit, a first signal relating to blood of the living body and a second signal relating to surrounding tissue other than the blood of the living body; and a hemoglobin concentration estimation unit that estimates a hemoglobin concentration on the basis of the first signal and the second signal acquired by the signal acquisition unit when a blood flow state of the living body is a first state, and the first signal and the second signal acquired by the signal acquisition unit when the blood flow state is a second state different from the first state.
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang en utilisant des capteurs optiques, p. ex. des oxymètres à photométrie spectrale
A light detecting device includes a package having an opening, a light transmission section closing the opening; a Fabry-Perot interference filter disposed inside the package and including a pair of mirror sections having a variable distance from each other in a first direction; a light detector disposed inside the package; a first aperture section having a first aperture located outside the package; and a second aperture section having a second aperture located outside the package. A first surface of the first aperture section facing the second aperture side and surrounding the first aperture has light absorbency. A second surface of the second aperture section facing the first aperture side and surrounding the second aperture is separated from the first surface and has light absorbency.
G01J 3/26 - Production du spectreMonochromateurs en utilisant une réflexion multiple, p. ex. interféromètre de Fabry-Perot, filtre à interférences variables
G01J 3/02 - SpectrométrieSpectrophotométrieMonochromateursMesure de la couleur Parties constitutives
30.
IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD
An image processing apparatus includes a sinogram creation unit, a CNN processing unit, a convolution integration unit, a forward projection calculation unit, a CNN training unit, a storage unit, and an image reconstruction unit. The forward projection calculation unit performs forward projection calculation on an output image to create a calculated sinogram. In a first processing step, the CNN training unit trains a CNN based on an error between a reconstructed image created by the image reconstruction unit and the output image. In a subsequent second processing step, the CNN training unit trains the CNN based on an error between a measured sinogram and the calculated sinogram.
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p. ex. sur la position ou la section du faisceauMesure de la distribution spatiale de radiations
A radiation imaging device includes a sensor panel, a support member that supports the sensor panel, a control board disposed at a position facing a back surface of the support member, a flexible printed circuit disposed to connect the sensor panel and the control board, an IC chip mounted on the flexible printed circuit, and a heat absorbing member provided between the support member and the IC chip and configured to absorb heat from the IC chip. The heat absorbing member includes a heat absorbing portion disposed in a region overlapping the flexible printed circuit and having a contact surface that contacts the IC chip, and a heat radiating portion connected to the heat absorbing portion and extending outward beyond an outer edge of the flexible printed circuit. A thickness of the heat radiating portion is greater than a thickness of the heat absorbing portion.
A sample support of an embodiment is a sample support for ionization of a sample. The sample support includes a substrate having a first surface, a second surface opposite to the first surface, and an irregular porous structure opening to at least the first surface. The porous structure is formed by a plurality of particles connected to each other. Particles of the plurality of particles that constitute the first surface have a rough surface on which an uneven structure is formed on a first surface side, and a non-rough surface on which the uneven structure is not formed on a second surface side.
H01J 49/04 - Dispositions pour introduire ou extraire les échantillons devant être analysés, p. ex. fermetures étanches au videDispositions pour le réglage externe des composants électronoptiques ou ionoptiques
An inspection device includes: a laser irradiation unit; an imaging unit; and a control unit. The control unit is configured to execute a processing process of controlling the laser irradiation unit according to a recipe set such that a plurality of modified regions are formed inside a wafer by irradiating the wafer with a laser beam and a full-cut state where cracks extending from the modified regions have reached a back surface and a surface is attained; an identification process of identifying a state of the crack on the back surface extending from the modified region, and a state of at least one of the modified regions and the cracks inside the wafer, based on a signal and a determination process of determining whether or not a dicing force applied to the wafer according to the recipe is proper, based on information identified in the identification process.
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
A radiation detector includes: a scintillator including a pair of end surfaces opposing each other in a first direction and one side surface coupling the end surfaces; a semiconductor photodetector including a semiconductor substrate; and a wiring member electrically connected to the semiconductor photodetector. A length of the scintillator in the first direction is longer than that of the scintillator in a second direction orthogonal to the one side surface. A length of the one side surface in the first direction is longer than a width of the one side surface in a third direction. The semiconductor substrate includes a plurality of photodetection regions disposed in a first portion and first electrodes and a second electrode disposed in a second portion. Each of the photodetection regions includes a plurality of avalanche photodiodes arranged to operate in Geiger mode and a plurality of quenching resistors.
A bi-directional heat transfer apparatus comprises a heat spreader configured to attach to a device or apparatus. A plurality of thermoelectric coolers is mounted in thermal contact with a plurality of different surfaces of the heat spreader. A respective one of the plurality of fan-cooled heat sinks is mounted in thermal contact with a respective one of the plurality of thermoelectric coolers so that each of the respective ones of the plurality of fan-cooled heat sinks removes heat by convection cooling in a respective one of a plurality of directions.
A light source apparatus includes: a light source configured to output light; an optical fiber to which the light output from the light source is input and which outputs the light; a spatial light modulator including an input unit for a control signal and configured to be able to control distribution of angles at which incident light is reflected based on the control signal; and a diffraction grating configured to disperse the light output from the optical fiber to cause the light to be incident on the spatial light modulator, and return at least a part of the light reflected by the spatial light modulator to the light source. An optical resonator is formed by the light source and the spatial light modulator, and the light returned to the light source is output.
Provided is an electron tube comprising: an electron emission unit that emits electrons in response to incidence of light; an electron detection unit that outputs a current signal in response to incidence of electrons; a first integrated circuit unit and a second integrated circuit unit that output a voltage signal in response to the input of the current signal; and a housing that houses the electron emission unit, the electron detection unit, the first integrated circuit unit, and the second integrated circuit unit.
Provided is an electron tube comprising: an electron emission unit that emits electrons in response to incidence of light; an electron detection unit that outputs a current signal in response to incidence of electrons; a first integrated circuit unit and a second integrated circuit unit that output a voltage signal in response to input of the current signal; and a housing that houses the electron emission unit and the electron detection unit. The first integrated circuit unit and the second integrated circuit unit are supported by the housing.
A photomultiplier tube includes a photoelectric surface; N (where N is an integer of 2 or more) dynodes that multiply electrons emitted from the photoelectric surface; and an anode that collects the electrons multiplied by the dynodes. An (m)th -stage dynode (where m is an integer of 2 or more and N or less) of the dynodes is disposed to face an (m−1)th-stage dynode of the dynodes. In a longitudinal direction of the dynodes, a width of an edge of the (m)th -stage dynode of the dynodes on a side closer to the (m−1)th-stage dynode of the dynodes is less than a width of the (m−1)th-stage dynode of the dynodes. In the longitudinal direction, the edge of the (m)th -stage dynode of the dynodes is included in the (m−1)th-stage dynode of the dynodes.
A method for manufacturing a light detection device includes a first process of preparing a semiconductor wafer having a first main surface and a second main surface, a second process of providing a first support substrate on the first main surface, a third process of cutting the semiconductor wafer and the first support substrate in a state where the first support substrate is provided on the first main surface, and obtaining a light receiving element in a state where a support member is provided on a first surface, a fourth process of, by using a plurality of connection members arranged between a second surface and a mounting surface of a circuit structure, electrically and physically connecting the light receiving element and the circuit structure in a state where the support member is provided on the first surface, and a fifth process of removing the support member from the first surface.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 71/00 - Fabrication ou traitement des dispositifs couverts par la présente sous-classe
42.
IMAGE PROCESSING METHOD, IMAGE PROCESSING DEVICE, AND IMAGE PROCESSING PROGRAM
An image acquisition device includes a relationship calculation unit that calculates relationship data between pixel values in an image and a statistical value of the pixel values, and a parameter setting unit and a filter processing unit that process an image to be processed. The parameter setting unit and the filter processing unit specify the statistical value for each pixel of the image on the basis of a pixel value for each pixel of the image and the relationship data, set parameters of an edge-preserving smoothing filter for each pixel of the image on the basis of the specified statistical value, and process the image using the edge-preserving smoothing filter in which the parameters are set for each pixel of the image.
A light source apparatus includes: a light source configured to output light; a spatial light modulator including an input unit for a control signal and configured to be able to control distribution of angles at which incident light is reflected based on the control signal; a diffraction grating configured to disperse the light output from the light source to cause the light to be incident on the spatial light modulator, and return at least a part of the light reflected by the spatial light modulator to the light source; and a pinhole configured to cause only a part of the light returned from the diffraction grating in a spatially dispersed state to pass therethrough. In the light source apparatus, an optical resonator is formed by the light source and the spatial light modulator, and the light passing through the pinhole and returned to the light source is output.
H01S 3/107 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p. ex. commutation, ouverture de porte, modulation ou démodulation par commande de dispositifs placés dans la cavité utilisant des dispositifs électro-optiques, p. ex. produisant un effet Pockels ou Kerr
44.
OPTICAL SCANNER MODULE AND WIND SPEED DETECTION DEVICE
An optical scanner module 7 comprises: a lens optical system 22 that controls the condensed state of a light beam which is input light; and a reflection type optical scanner 23 that has a rotating stage 31 in which a rotation axis K1 is inclined at an angle β with respect to the optical axis of the light beam from the lens optical system 22, and a mirror unit 32 in which a mirror 34 is held with respect to the rotating stage 31 so as to be inclined at an angle α with respect to a rotating surface 31a of the rotating stage 31, the optical scanner causing the optical axis, of a light beam reflected by the mirror 34, to rotate at a beam deflection angle θ as a result of rotation of the rotating stage 31.
This optical scanner module 7A comprises: a circulator 21 including a polarizing beam splitter 24 that separates an optical path of a light beam having a first polarization from an optical path of a light beam having a second polarization which is orthogonal to the first polarization; a beam expander 22 that controls the diameter of the light beam of the first polarization passing through the polarizing beam splitter 24; an optical scanner 23A that emits the light beam from the beam expander 22 toward the outside while rotating the light beam at a prescribed beam deflection angle θ; and a 1/4 wavelength plate 32 that converts the polarization state of the light beam from the beam expander 22 from the first polarization to circular polarization, and converts the polarization state of return light from the outside based on emission of the light beam converted to the circular polarization to the second polarization.
There is provided a beam splitter for branching incident light into a plurality of different components and emitting the components. The beam splitter includes a first light transmissive member that has a first surface and has transmissivity with respect to the incident light, a second light transmissive member that has a second surface and has transmissivity with respect to the incident light, an optical branching film that has a function of branching the incident light into the plurality of components, and an adhesive member configured to bond the first light transmissive member and the second light transmissive member. The first light transmissive member and the second light transmissive member are arranged such that the first surface and the second surface face each other with the optical branching film interposed therebetween.
A phase modulation module includes a base portion, a phase modulation element, a holding portion including first and second wall portions and a top wall portion, and a filling material. The top wall portion includes a first extending portion and a second extending portion. End surfaces of the first extending portion and the second extending portion face the phase modulation element. The filling material is disposed in each of a first space formed by a first side surface, the first side wall portion, and the top wall portion of the phase modulation element, and a second space formed by a second side surface, the second side wall portion, and the top wall portion of the phase modulation element, and connects the phase modulation element and the holding portion in the first space and connects the phase modulation element and the holding portion in the second space.
A first holding portion includes a first side wall portion facing a first side surface of a phase modulation element, and a first protruding portion extending from the first side wall portion toward the phase modulation element. A second holding portion includes a second side wall portion facing a second side surface of the phase modulation element. An end surface of the first protruding portion faces the phase modulation element. A potting material connects an end surface of the first protruding portion and the first side surface to each other in a first space formed by the first side surface of the phase modulation element and the first side wall portion and the first protruding portion of the first holding portion. Air is disposed in at least a part of an overlapping portion of the first space overlapping the first protruding portion when view ed from a predetermined direction.
An optical fiber coupler 5 is an optical element for separating light whose wavelength is to be measured, and includes a first optical fiber 20 allowing light having a predetermined center wavelength to propagate, and a second optical fiber 30 having a coupling region 50 coupled to the first optical fiber 20, in which the center wavelength of the light allowed to propagate through the first optical fiber 20 is a wavelength at which a transmittance in the coupling region 50 is within a range of 10% to 90%, and the light is transmitted and reflected according to a wavelength in the coupling region 50.
G01J 9/02 - Mesure du déphasage des rayons lumineuxRecherche du degré de cohérenceMesure de la longueur d'onde des rayons lumineux par des méthodes interférométriques
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
H01S 3/00 - Lasers, c.-à-d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
H01S 3/13 - Stabilisation de paramètres de sortie de laser, p. ex. fréquence ou amplitude
50.
LIGHT DETECTION DEVICE AND METHOD FOR MANUFACTURING SAME
This light detection device 1A comprises an optical waveguide unit 10 and a light detection unit 20. The optical waveguide unit 10 has a core layer 12 for guiding target light, and a first cladding layer 11 having a lower refractive index than the core layer 12. The light detection unit 20 is provided at a predetermined position with respect to the optical waveguide unit 10, and has a first electrode layer 21, a photoelectric conversion layer 22, and a second electrode layer 23. The photoelectric conversion layer 22 in the light detection unit 20 is configured to have a bulk heterojunction comprising a plurality of organic semiconductor materials. The light detection unit 20 is configured to include at least one metal layer in contact with the photoelectric conversion layer 22, an interface between the metal layer and the photoelectric conversion layer 22 being configured to be capable of inducing surface plasmon, and the target light being detected by coupling a guided mode in the optical waveguide unit 10 with a surface plasmon mode at the interface. Thus, a light detection device capable of satisfactorily detecting, by means of the light detection unit, target light propagating through the optical waveguide unit is realized.
H10K 30/60 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photorésistances
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
H10K 30/30 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant des hétérojonctions de masse, p. ex. des réseaux interpénétrés de domaines de matériaux donneurs et accepteurs
H10K 71/12 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation
H10K 71/13 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation en utilisant des techniques d'impression, p. ex. l’impression par jet d'encre ou la sérigraphie
H10K 71/16 - Dépôt d'une matière active organique en utilisant un dépôt physique en phase vapeur [PVD], p. ex. un dépôt sous vide ou une pulvérisation cathodique
H10K 71/40 - Traitement thermique, p. ex. recuit en présence d'une vapeur de solvant
H10K 71/60 - Formation de régions ou de couches conductrices, p. ex. d’électrodes
51.
INTERFERENCE MEASUREMENT DEVICE AND INTERFERENCE MEASUREMENT METHOD
An interference measurement apparatus includes a light source, an interference optical system, a photomultiplier tube, an interference intensity measurement unit, an electric field amplitude calculation unit, and an analysis unit. The light source outputs light in a band in which the photomultiplier tube has sensitivity. The photomultiplier tube has sensitivity in a band of light including a terahertz wave, and outputs an electrical signal. The electric field amplitude calculation unit, based on a relationship between a value of an electric field amplitude of light incident on the photomultiplier tube and a value of the electrical signal output from the photomultiplier tube, converts a value of an intensity of interference light into a value of an electric field amplitude, and obtains the value of the electric field amplitude of the interference light for each value of a time difference corresponding to an optical path length difference.
G01J 3/453 - Spectrométrie par interférence par corrélation des amplitudes
G01J 3/42 - Spectrométrie d'absorptionSpectrométrie à double faisceauSpectrométrie par scintillementSpectrométrie par réflexion
G01N 21/3586 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant la lumière de l'infrarouge lointainCouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant un rayonnement térahertz par spectroscopie térahertz dans le domaine temporel [THz-TDS]
52.
SAMPLE MEASUREMENT DEVICE AND SAMPLE MEASUREMENT METHOD
An irradiation unit scans an excitation light irradiation position along a line which does not pass through a same position a plurality of times in a measurement range on a sample over a period in which a measurement unit acquires one Raman spectrum. In the case in which a plurality of scanning lines are used, it is set such that each scanning line does not pass through the same position on the sample a plurality of times. It is set such that the plurality of scanning lines do not pass through the same position a plurality of times. Further, it is set such that a plurality of excitation light irradiation regions do not overlap each other.
An inspection device comprises: an image acquisition unit 11 for acquiring an entire image of a wafer including a plurality of blocks disposed at predetermined intervals, each of the plurality of blocks including a plurality of light-emitting elements; a block region setting unit 14 for setting a plurality of block regions, corresponding to the plurality of blocks, for the entire image; and an inspection unit 17 for inspecting at least one block region among the plurality of block regions and generating data indicating an inspection result.
A correction member according to the present disclosure is for performing shading correction on a fluorescent image of a sample obtained by irradiation with excitation light. The correction member comprises a semiconductor substrate which includes: a front surface irradiated with excitation light; and a rear surface facing the reverse side from the front surface. The material of the semiconductor substrate includes an inorganic compound semiconductor that generates fluorescence by irradiation with excitation light.
In a light detection device, a processing unit sets a threshold for each of a plurality of channels, and identifies a channel in which noise is included in a first signal or a second signal based on the threshold and a difference between the first signal and the second signal in each of the plurality of channels. The threshold is set based on a difference value. The difference value includes a difference between a value of the first signal in a channel and a value of the first signal in a first proximity channel proximate to the channel, and a difference between a value of the second signal in the channel and a value of the second signal in a second proximity channel proximate to the channel.
H04N 25/62 - Détection ou réduction du bruit dû aux charges excessives produites par l'exposition, p. ex. les bavures, les éblouissements, les images fantômes, la diaphonie ou les fuites entre les pixels
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
In a light detection device, a processing unit sets a threshold for each of a plurality of channels, and identifies a channel in which noise is included in a first signal or a second signal based on the threshold and a difference between the first signal and the second signal in each of the plurality of channels. The threshold is set for each of the plurality of channels based on the first signal and the second signal.
H04N 25/62 - Détection ou réduction du bruit dû aux charges excessives produites par l'exposition, p. ex. les bavures, les éblouissements, les images fantômes, la diaphonie ou les fuites entre les pixels
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
A quantum cascade detector includes a semiconductor substrate and a plurality of unit structures formed on the semiconductor substrate so as to have ridge portions each including an active layer. The unit structures are arranged on a main surface of the semiconductor substrate. Each unit structure includes a contact layer electrically connected to the active layer, an upper metal layer electrically connected to the active layer, and a lower metal layer electrically insulated from the upper metal layer and electrically connected to the contact layer. Each contact layer included in the plurality of unit structures is separated from each other. The upper metal layer of a first unit structure among the plurality of unit structures is electrically connected to the lower metal layer of a second unit structure adjacent to the first unit structure such that the ridge portions of the plurality of unit structures are serially and electrically connected.
H10F 77/124 - Matériaux actifs comportant uniquement des matériaux du groupe III-V, p. ex. GaAs
H10F 77/14 - Forme des corps semi-conducteursFormes, dimensions relatives ou dispositions des régions semi-conductrices au sein des corps semi-conducteurs
An image acquisition device includes an illumination device that irradiates a target object with light from a range of a light irradiation unit, and an imaging device that detects light that is specularly reflected by the target object in the light, via an imaging lens, in which a straight line connecting a center of the light irradiation unit and an intersection between an optical axis of the imaging lens and the target object is set to be inclined by 2 degrees or more and 120 degrees or less with respect to the optical axis, and a solid angle of the light irradiation unit as viewed from the intersection is set to 0 steradians or more and 0.15 steradians or less.
A signal processing circuit 3 comprises an A/D converter 31 and a noise removal circuit 32. The A/D converter 31 converts an electric signal Va outputted from a photodetector 2 in response to the input of photons to time-series data Da including a plurality of digital signal values. The noise removal circuit 32 evaluates, for each of the plurality of digital signal values, whether a difference value between a digital signal value and the digital signal value preceding the digital signal value satisfies a threshold value condition indicating the presence of a component based on the input of photons. The noise removal circuit 32 replaces each of the plurality of digital signal values with a prescribed value in a first period that does not include a component based on the input of photons. The noise removal circuit 32 determines the first period on the basis of the evaluation result.
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
G01J 11/00 - Mesure des caractéristiques d'impulsions lumineuses individuelles ou de trains d'impulsions lumineuses
H10F 30/22 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes
62.
SIGNAL PROCESSING CIRCUIT AND SIGNAL PROCESSING METHOD
A signal processing circuit 3 is provided with an A/D converter 31 and a noise reduction circuit 32. The A/D converter 31 converts an electric signal Va output from a photodetector 2 in response to the input of photons into time-series data Da including a plurality of digital signal values. The noise reduction circuit 32 determines whether or not each of the plurality of digital signal values satisfies a threshold condition indicating the presence of a component based on the input of the photons. The noise reduction circuit 32 replaces each of the plurality of digital signal values with a predetermined value in a first period. The noise reduction circuit 32 sets a period excluding a second period as the first period. The second period is a period including a digital signal value determined to satisfy the threshold condition among the plurality of digital signal values and at least one digital signal value before and after said digital signal value.
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
G01J 11/00 - Mesure des caractéristiques d'impulsions lumineuses individuelles ou de trains d'impulsions lumineuses
H10F 30/22 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes
63.
RADIATION IMAGING APPARATUS AND RADIATION INSPECTION APPARATUS
A radiation imaging apparatus comprising: a sensor unit including a plurality of pixels that are arranged two-dimensionally and generate signals corresponding to radiation; and a sensor control unit for driving the sensor unit for time delay integration, wherein the sensor unit includes a first region that is composed of some of the pixels and is driven by the sensor control unit at a first scan rate, and a second region that is composed of some of the other pixels and is driven by the sensor control unit at a second scan rate different from the first scan rate.
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
64.
RADIOGRAPHIC INSPECTION DEVICE AND RADIOGRAPHIC INSPECTION METHOD
A radiographic inspection device 1 comprises: a sensor unit 10 that includes a plurality of pixels 11 that generate signals that correspond to radiation R from a radiation generator 2; a sensor control unit 21 that drives the sensor unit 10 using time delay integration; and a control device 5 that outputs position information Pii for an object OJ in the direction from the radiation generator 2 toward the sensor unit 10 on the basis of the signals. The sensor unit 10 has a first region 101 that is formed from a portion of the pixels 11a and is driven by the sensor control unit 21 at a first scan rate and a second region 102 that is formed from another portion of the pixels 11b and is driven by the sensor control unit 21 at a second scan rate that is different from the first scan rate. The control device 5 outputs the position information Pii on the basis of the signals generated at both the pixels 11a in the first region 101 and the pixels 11b in the second region 102.
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
65.
METHOD, DEVICE, AND PROGRAM FOR IDENTIFYING OR EVALUATING BILE CANALICULUS REGIONS
Disclosed are: a method for identifying, by using refractive index distribution data of an observation object containing liver cells, bile canaliculus regions included in the observation object; and a method for evaluating the bile canaliculus regions on the basis of bile canaliculus parameters obtained from the refractive index distribution data of the observation object containing the liver cells.
G01N 21/45 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant des méthodes interférométriquesRéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant les méthodes de Schlieren
G01N 21/41 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique
G01N 33/483 - Analyse physique de matériau biologique
This photodetection circuit comprises: a photodetection photodetector that outputs a signal current; a current-to-voltage converter that converts the signal current into a first signal voltage; a first current removal circuit that extracts a first current from the signal current; and a second current removal that extracts a second current from the signal current. The first current removal circuit determines the level of the first current based on the level of a low-frequency component at a prescribed timing, and maintains the level of the first current. The second current removal circuit has a feedback circuit, a smoothing capacitor, and a second transistor. The feedback circuit part outputs a second signal voltage of a level in accordance with the first signal voltage. The smoothing capacitor smooths the second signal voltage. The second transistor extracts, from the signal current, a second current of a level corresponding to the smoothed second signal voltage.
A light detection apparatus 1 comprises a light sensor 21 and a circuit. The light sensor 21 is an electron tube and has a housing, a photoelectric surface, and a detection unit. The housing maintains an internal vacuum. The photoelectric surface is disposed in the housing and converts photons into photoelectrons. The detection unit is disposed in the housing, and multiplies the photoelectrons and outputs a current signal. The circuit generates time-series data Da of a digital signal on the basis of a current signal Ja from the light sensor 21. The circuit includes an I/V conversion circuit 22, an A/D converter 31, and a noise reduction circuit 32. The I/V conversion circuit 22 converts the current signal Ja into an analog voltage signal Va. The A/D converter 31 converts the analog voltage signal Va into the time-series data Da. The noise reduction circuit 32 reduces a noise component included in the time-series data Da.
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
H01J 40/12 - Éléments de circuits structuralement associés au tube
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
This optical waveguide element is provided with: a substrate with a photonic crystal structure; and a core that is disposed above part of a surface of the substrate in a first direction following the surface, and that extends along a second direction following the surface and intersecting the first direction. The core receives incident light at an end on one side in the second direction and emits the light from an end on the other side in the second direction. The substrate includes: a base layer; and a plurality of columnar regions that are distributed in two dimensions along the surface within the base layer and that comprise photonic crystal slabs. When the columnar regions are viewed from a third direction that intersects the surface, the size of the columnar regions changes in the second direction.
An observation apparatus includes a light source, a mirror, a condenser lens, an objective lens, a beam splitter, an imaging unit, and an analysis unit. The analysis unit irradiates an observation object with light along each of a plurality of light irradiation directions by changing an orientation of a reflection surface of the mirror, acquires an interference intensity image at a reference position for each of the plurality of light irradiation directions from the imaging unit, and obtains a phase differential image of the observation object by performing predetermined processing based on the acquired interference intensity images.
G01N 21/45 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant des méthodes interférométriquesRéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant les méthodes de Schlieren
An observation apparatus includes a light source, a mirror, a condenser lens, an objective lens, a beam splitter, an imaging unit, and an analysis unit. The analysis unit irradiates an observation object with light along each of a plurality of light irradiation directions by changing an orientation of a reflection surface of the mirror, acquires an interference intensity image at a reference position for each of the plurality of light irradiation directions from the imaging unit, and obtains a phase differential image of the observation object by performing predetermined processing based on the acquired interference intensity images.
G01N 21/45 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant des méthodes interférométriquesRéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique en utilisant les méthodes de Schlieren
G01N 21/41 - RéfringencePropriétés liées à la phase, p. ex. longueur du chemin optique
An observation apparatus 1A includes a light source 10, an irradiation unit 31, an imaging unit 50, and a processing unit 60. The irradiation unit 31 inputs spatially coherent light output from the light source 10, generates first light and second light from the input light, and irradiates an observation object S with the first light and the second light in an overlapping manner. The irradiation unit 31 irradiates the observation object S with the first light along a fixed light irradiation direction, and irradiates the observation object S with the second light along each of a plurality of light irradiation directions. The imaging unit 50 receives both the first light and the second light, and captures an interference intensity image generated by interference between the first light and the second light. The processing unit 60 performs required processing based on the interference intensity image to generate a complex amplitude image and the like. Thus, an observation apparatus capable of reducing influence of multiple scattered light and easily observing an observation object even in the case in which the observation object is a multiple scattering object is realized.
A fluorescent image acquisition system includes an irradiation device which irradiates a sample with each of excitation lights of a plurality of wavelength distributions; an image acquisition device which acquires, a first fluorescent image in a first optical state and a second fluorescent image in a second optical state; and an image processing device which processes a plurality of the first fluorescent images and a plurality of the second fluorescent images, in which the image processing device calculates an intensity ratio that is a ratio between an intensity value of a pixel of the first fluorescent image and an intensity value of a pixel of the second fluorescent image corresponding to the pixel, and calculates the intensity ratio for each of the plurality of excitation lights, and discriminates whether the pixel is a single-color pixel based on the intensity ratio for each of the plurality of excitation lights.
A terahertz wave spectroscopic measurement apparatus includes a pump light source, a terahertz wave generation element, a terahertz wave detection element, a probe light source, a quarter wave plate, a polarizing beam splitter, a streak camera, a timing generation unit, and an analysis unit, and is configured to perform spectroscopic measurement of a sample. The streak camera detects temporal waveforms of respective intensities of a first polarized light component and a second polarized light component of probe light output from the polarizing beam splitter and of pump light. The analysis unit performs the spectroscopic measurement of the sample based on the temporal waveforms detected by the streak camera.
G01N 21/3586 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant la lumière de l'infrarouge lointainCouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant un rayonnement térahertz par spectroscopie térahertz dans le domaine temporel [THz-TDS]
A semiconductor light-emitting device includes a plurality of unit light-emitting elements on a substrate, each unit light-emitting element has a laminated structure including an active layer, a photonic crystal layer, and a first contact layer and a second contact layers sandwiching the active layer and the photonic crystal layer, and the first contact layer of one unit light-emitting element and a second contact layer of another unit light-emitting element adjacent to the one unit light-emitting element are electrically connected by an electrode layer, whereby a plurality of light-emitting element arrays, each having a plurality of unit light-emitting elements arrayed in a row, are configured.
A model usage evaluation method for evaluating use of an inference model that is generated by machine learning training and inputs information based on an image includes: a target image feature amount acquisition step of acquiring a feature amount of a target image used as an input to the inference model; a training image feature amount acquisition step of acquiring a feature amount of a training image used for training for generating the inference model; and an evaluation step of comparing the feature amount of the target image acquired in the target image feature amount acquisition step with the feature amount of the training image acquired in the training image feature amount acquisition step to evaluate the use of the inference model for the target image.
G06V 10/77 - Traitement des caractéristiques d’images ou de vidéos dans les espaces de caractéristiquesDispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant l’intégration et la réduction de données, p. ex. analyse en composantes principales [PCA] ou analyse en composantes indépendantes [ ICA] ou cartes auto-organisatrices [SOM]Séparation aveugle de source
This laser processing method comprises: a preparation step for preparing an object; a first formation step for forming a first modified region inside a substrate along a line by causing laser light to be incident on the substrate from a second surface of the object; and a second formation step for forming a second modified region inside the substrate along the line by causing laser light to be incident on the substrate from the second surface. In the second formation step, a second modified region is formed between the first modified region and the second surface such that a crack reaches the second surface from the first modified region at a first portion of the line.
B23K 26/02 - Mise en place ou surveillance de la pièce à travailler, p. ex. par rapport au point d'impactAlignement, pointage ou focalisation du faisceau laser
B23K 26/03 - Observation, p. ex. surveillance de la pièce à travailler
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
A light source device according to the present invention comprises: a light-emitting sealed body which has a sealed container that has a discharge gas sealed therein and a pair of electrodes that face each other in the sealed container; an emission unit which emits laser light; and an optical system which condenses the laser light emitted from the emission unit such that a light-condensing region of the laser light is positioned between the pair of electrodes. The optical system condenses the laser light such that the light-condensing region in a cross-section perpendicular to the optical axis of the laser light has an elongated shape.
H01J 65/04 - Lampes à atmosphère gazeuse portée à la luminescence par un champ électromagnétique extérieur ou par une radiation corpusculaire extérieure, p. ex. lampe indicatrice
This photodetection element (1) comprises a semiconductor substrate (11) provided with a plurality of avalanche photodiodes (APD) each electrically connected to a corresponding quenching element (R1) and operating in Geiger mode. The semiconductor substrate (11) includes a substrate layer (12), and a first semiconductor layer (13) and a second semiconductor layer (14) which have a first conductivity type. Each of the plurality of avalanche photodiodes (APD) includes a first semiconductor region (21) and a second semiconductor region (23). The first semiconductor region (21) is disposed in the first semiconductor layer (13) and has a second conductivity type different from the first conductivity type. The second semiconductor region (23) is disposed in the first semiconductor layer (13) so as to be positioned between the first semiconductor region (21) and the second semiconductor layer (14), is bonded to the first semiconductor region (21) so that the first semiconductor region (21) and the first semiconductor layer (13) are not in contact with each other, and has the second conductivity type. The impurity concentration of the first semiconductor layer (13) is higher than the impurity concentration of the second semiconductor layer (14).
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
H10F 30/221 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel étant une homojunction PN
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10F 77/14 - Forme des corps semi-conducteursFormes, dimensions relatives ou dispositions des régions semi-conductrices au sein des corps semi-conducteurs
H10F 77/122 - Matériaux actifs comportant uniquement des matériaux du groupe IV
A photodetection element (1) comprises a semiconductor substrate (11) provided with a plurality of avalanche photodiodes (APD) each electrically connected to a corresponding quenching element (R1) and operating in Geiger mode. The semiconductor substrate (11) includes a substrate layer (12) and a first epitaxial semiconductor layer (13) and second epitaxial semiconductor layer (14) that have a first conductivity type. Each of the plurality of avalanche photodiodes (APD) includes a first semiconductor region (21) and a second semiconductor region (22). The first semiconductor region (21) is disposed in the first epitaxial semiconductor layer (13) and has a second conductivity type different from the first conductivity type. The second semiconductor region (22) is disposed in the first epitaxial semiconductor layer (13) so as to be positioned between the first semiconductor region (21) and the second epitaxial semiconductor layer (14), and has the first conductivity type. The impurity concentration of the first epitaxial semiconductor layer (13) is higher than the impurity concentration of the second epitaxial semiconductor layer (14).
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
H10F 30/221 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel étant une homojunction PN
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10F 77/14 - Forme des corps semi-conducteursFormes, dimensions relatives ou dispositions des régions semi-conductrices au sein des corps semi-conducteurs
H10F 77/122 - Matériaux actifs comportant uniquement des matériaux du groupe IV
A method of generating an all-in-focus image includes: acquiring an original image for each focal position of an object by capturing an image of the object while shifting the focal position in a predetermined direction; performing frequency decomposition on the original image for each focal position to generate an edge image for each frequency band; generating an all-in-focus edge image for each frequency band by integrating the edge images for each frequency band in the predetermined direction; and generating the all-in-focus image by integrating the all-in-focus edge images for each frequency band.
An image acquisition method includes: a step of generating an excitation optical pulse group including a plurality of excitation optical pulses repeatedly; a step of emitting the excitation optical pulse group to an object containing a fluorescent dye; a step of detecting intensities of fluorescence generated at a plurality of locations of the object due to emission of the excitation optical pulse group; and a step of generating a fluorescent image based on the intensities of the fluorescence at the plurality of locations of the object. In the step of generating the excitation optical pulse group, a time interval between the plurality of excitation optical pulses is set to be equal to or shorter than a relaxation time between excited triplet states of the fluorescent dye or to be shorter than 10 picoseconds.
An X-ray beam scanning optical system includes an X-ray source that outputs an X-ray beam R1 toward a semiconductor device, a first capillary lens that renders the X-ray beam R1 output from the X-ray source into an X-ray beam R2 that is parallel X-rays, a second capillary lens that condenses the X-ray beam R2 having passed through the first capillary lens on the semiconductor device, and a shielding member disposed between the X-ray source and the semiconductor device.
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
87.
DYE DATA ACQUISITION METHOD, DYE DATA ACQUISITION DEVICE, AND DYE DATA ACQUISITION PROGRAM
A data processing device clusters N (N is an integer of 2 or more) analytes into L (L is an integer of 2 or more and N-1 or less) target object groups based on the intensity values of each analyte for each of C (C is an integer of 2 or more) wavelength bands and generates L cluster matrices in which the intensity values for each of the C wavelength bands are arranged; calculates a statistical value of the intensity values of the target object groups in the C wavelength bands; and uses the statistical values in the C wavelength bands to perform unmixing with respect to the C wavelength bands, and generates K (K is an integer of 2 or more and C or less) pieces of dye data indicating a distribution for each of K fluorescent dyes.
This laser processing method is provided with: a first processing step which performs laser processing along a first planned formation surface; and a second processing step which performs laser processing along a second planned formation surface. In the first and second processing steps, the laser light is shaped so that the focused region of the laser light has a longitudinal direction when viewed from the Z direction, and the longitudinal direction intersects a processing progress direction. In the first processing step, laser processing is performed under a first processing condition for extending a crack from a modified region along the first planned formation surface, and in the second processing step, laser processing is performed under a second processing condition for extending a crack from the modified region along the second planned formation surface. An inclination angle of the second planned formation surface is larger than an inclination angle of the first planned formation surface.
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
B23K 26/064 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p. ex. lentilles, miroirs ou prismes
B23K 26/073 - Détermination de la configuration du spot laser
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p. ex. des matériaux pour semi-conducteursAppareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p. ex. par des outils animés d'un mouvement alternatif
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p. ex. cloisonnement en zones séparées
89.
FILM THICKNESS MEASUREMENT DEVICE AND FILM THICKNESS MEASUREMENT METHOD
A film thickness measurement device 1 includes: a light source unit 10 that outputs, toward a sample 100, inspection light having a wavelength distribution within a predetermined wavelength region; a dichroic mirror 22 that has a stepwise filter characteristic whereby light transmittance changes in a stepwise manner at an edge wavelength within the predetermined wavelength region; area sensors 23, 24 that respectively receive, from incident light which is the inspection light reflected by the sample 100, transmitted light transmitted through the dichroic mirror 22 and reflected light reflected by the dichroic mirror 22, and that output luminance data of the transmitted light and luminance data of the reflected light; and a calculation unit 32 that acquires a film thickness of the sample 100 using the luminance data of the transmitted light and the luminance data of the reflected light.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
An inspection device comprising: a light source unit that outputs inspection light; a filter unit that includes an optical element having stepwise filter characteristics in which the transmittance of light changes stepwise at an edge wavelength within a prescribed wavelength region; a photodetection unit that receives, from among incident light from an object, first light that is one of transmitted light transmitted through the optical element and reflected light reflected by the optical element, and second light that includes at least the other of the transmitted light and the reflected light, and outputs luminance data of the first light and luminance data of the second light; a data generation unit that generates characteristic data for the incident light using the luminance data of the transmitted light and the luminance data of the reflected light based on the luminance data of the first light and the luminance data of the second light; and an identification unit that identifies the material of foreign matter on the basis of the characteristic data.
G01N 21/89 - Recherche de la présence de criques, de défauts ou de souillures dans un matériau mobile, p. ex. du papier, des textiles
G01N 21/3563 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse de solidesPréparation des échantillons à cet effet
A laser processing device 1 comprises a storage unit for storing a balance parameter that is set for each item of information relating to the position of a focal point and that is a correction parameter for correcting a calculation formula in order to generate a second branch pattern for bringing an actual measured output value of each branch light detected by a detecting unit 17 closer to a target output value, and a control unit 9, wherein the control unit 9 is configured to execute: selection processing for selecting a balance parameter to be applied, on the basis of information relating to the positions of a first focal point, a second focal point, and a third focal point; correction processing for correcting the calculation formula on the basis of the selected balance parameter; and display processing for generating a second branch pattern on the basis of the corrected calculation formula, and setting and displaying the generated second branch pattern in a reflection type spatial light modulator 34 for a processing process.
B23K 26/53 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour modifier ou reformer le matériau dans la pièce à travailler, p. ex. pour faire des fissures d'amorce de rupture
B23K 26/067 - Division du faisceau en faisceaux multiples, p. ex. foyers multiples
A semiconductor laser element (1) comprises: a semiconductor substrate (2) formed of GaAs; a plurality of laser structures (4); a tunnel junction layer (5); a first reflective film (8) disposed on first end surfaces (4a) of the plurality of laser structures (4); and a second reflective film (9) disposed on second end surfaces (4b) of the plurality of laser structures (4). The semiconductor laser element (1) includes: an n-type carrier block layer (46) disposed between an active region (41) and an n-type clad layer (44) and having a thickness smaller than the thickness of the n-type clad layer (44); and a p-type carrier block layer (47) disposed between the active region (41) and the p-type clad layer (45) and having a thickness smaller than the thickness of the p-type clad layer (45).
H01S 5/125 - Lasers à réflecteurs de Bragg répartis [lasers DBR]
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
93.
IMAGE ACQUISITION DEVICE AND IMAGE ACQUISITION METHOD
This image acquisition device acquires an image of a sample held in a sample holding member. The image acquisition device comprises: a placement table having a plurality of placement spaces in which a storage member for storing a plurality of sample holding members can be placed; an adapter that can be attached to an upper portion or a lower portion of at least one placement space among the plurality of placement spaces; an adapter detection unit that detects the presence or absence of the adapter attached to the placement space; and a display unit that displays, on the basis of the detection result of the adapter detection unit, information about the placement space to which the adapter is attached among the plurality of placement spaces.
G01N 35/00 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet
An image processing method includes acquiring an image obtained by irradiating a subject with an energy beam and capturing an image of the energy beam transmitted through the subject, generating a spatial blur map indicating a distribution of spatial blur of noise based on the image, and inputting the image and the spatial blur map into a trained model constructed in advance through machine learning and executing image processing for removing noise from the image.
A61B 6/00 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations
This spectroscopic module comprises: a spectroscopic unit having a Fabry-Perot interference filter and a housing that accommodates the Fabry-Perot interference filter; a package having a body part and a cover part; and a fastening shaft member inserted into a hole formed in the package. The cover part includes an aperture member in which an aperture and a positioning part for positioning the aperture member with respect to the housing are formed, and an intermediate member. The hole is a first hole configured to include a hole part formed in the aperture member and a hole part formed in the intermediate member. The hole part formed in the aperture member is an enlarged hole part having an inner edge larger than the outer edge of the fastening shaft member in a cross-section perpendicular to the axial direction of the fastening shaft member.
G01J 3/26 - Production du spectreMonochromateurs en utilisant une réflexion multiple, p. ex. interféromètre de Fabry-Perot, filtre à interférences variables
An image acquisition device includes a support unit configured to support a sample, a light emitting unit configured to emit excitation light, a first light detection unit configured to detect fluorescent light, a first optical path switching unit configured to switch an optical path of the excitation light and an optical path of the fluorescent light, and an optical filter unit including an optical filter through which the fluorescent light is transmitted. The first optical path switching unit switches the optical path of the excitation light from a first optical path to a second optical path and switch the optical path of the fluorescent light from the second optical path to a third optical path. The optical filter has a transmission characteristic in which transmittance changes in a fluorescent light wavelength region. The optical filter unit arranges the optical filter on the third optical path.
This optical semiconductor device (1) comprises a lead (2), an optical semiconductor element (3), and a sealing member (7). The sealing member (7) includes a thick portion (40), a first thin portion (41) disposed on one side in a second direction with respect to the thick portion (40), and a second thin portion (42) disposed on the other side in the second direction with respect to the thick portion (40). The lead (2) includes a first portion (31) protruding from the thick portion (40) when viewed from one side in a first direction. The first portion (31) is in contact with the first thin portion (41) and extends to one side in the second direction along the first thin portion (41). The first portion (31) has a front surface (31a) exposed on one side in the first direction and a rear surface (31b) exposed on the other side in the first direction. The width (L1) of the first thin portion (41) in the second direction is greater than the width (W10) of the first portion (31) in a third direction.
H10F 30/22 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes
A magnetic sensor module includes a photodiode configured to detect pump light passing through a cell, a magnetic-field correction unit configured to correct a magnetic field within the cell, and a control circuit configured to execute a correction process for applying a correction magnetic field to the magnetic field within the cell. In the correction process, the control circuit acquires at least two intensities among first, second, and third detection intensities of magnetic fields in X-, Y-, and Z-axis directions. When one of two intensities among correction intensities of the magnetic fields in the X-, Y-, and Z-axis directions is changed, the control circuit adjusts one of the correction intensities to reduce the change in the detection intensity in a direction corresponding to the other of the two intensities.
G01R 33/26 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique pour la mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques utilisant le pompage optique
