This control system is for controlling a plurality of SiC elements (semiconductor elements). In this control system, a host CPU generates stop command information relating to the stopping of a plurality of SiC elements. In accordance with the stop command information, an FPGA (stop determination circuit 43, switching unit) switches an SiC element to be stopped at regular time intervals and operates the SiC element. The stop determination circuit 43 is a circuit that determines an SiC to be stopped, stops the output of PWM associated with the SiC element determined to be subject to stopping, and stops the SiC element.
H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
An FPGA 30 of a control system, according to the present invention, comprises: a delay time measurement circuit 46 (time-measuring unit) that outputs a PWM (output signal) to a GDM (gate driver module, drive circuit device) that drives a SiC (semiconductor element), receives input of a Sync (input signal) based on the PWM from the GDM, and measures the time from the output of the PWM to the input of the Sync; and a redundancy error determination circuit 47 (determination unit) that determines that the SiC is in an error state if the measurement result from the delay time measurement circuit 46 is outside of a predetermined fixed time range. (Selected drawing: Fig. 7)
H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
H02M 1/00 - Détails d'appareils pour transformation
The present invention provides a technology that can contribute to a production step. A core device applied to a DC-DC converter 100 comprises: two core members 130, 140 that form a core corresponding to a coil in a state where the two core members 130, 140 are combined in the direction along the axis of the coil without a gap between the joining surfaces of the two core members 130, 140; a core clip 160 that is assembled so as to surround the outer side of the core which includes at least two portions where the joining surfaces intersect on the outer surfaces of the two core members 130, 140 and that can hold the two core members 130, 140 in a state where the two core members 130, 140 are pressed against each other in the direction along the axis of the coil; and a core cover 150 that is provided between the core clip 160 and the core and that covers the outer surfaces of the two core members 130, 140 which include at least one portion where the joining surfaces intersect.
H01F 37/00 - Inductances fixes non couvertes par le groupe
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
An insulated wire comprising a wire and an insulating film that is provided on the wire, wherein at least one layer of the insulating film is a first insulating layer comprising a polyimide that is obtained by imidizing a first polyamic acid, the first polyamic acid is a polyaddition reaction product of an (A) acid dianhydride and a (B) diamine, a (B1) dimer diamine is included in a molar ratio of 0.2 or greater relative to the entire diamine component, and a source material of the polyamic acid includes a fluorine atom per molecule.
A resin composition comprising (X) a resin, (Y) a phosphorus-based flame retardant, and (Z) aluminum hydroxide, wherein the blended amount of the (Y) component is 5-30 parts by mass with respect to 100 parts by mass of the (X) component, and the blended amount of the (Z) component is 10-50 parts by mass with respect to 100 parts by mass of the (X) component.
C08L 101/00 - Compositions contenant des composés macromoléculaires non spécifiés
B32B 9/00 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes
B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
B32B 27/18 - Produits stratifiés composés essentiellement de résine synthétique caractérisée par l'emploi d'additifs particuliers
B32B 27/34 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyamides
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
The purpose of the present invention is to provide: an adhesive resin composition which is capable of forming a resin film that exhibits low dielectric properties while having excellent embedding properties and lamination properties; and a resin film, a multilayer wiring board, a copper foil with a resin, a coil structure, and a magnetic device, each of which is produced using the adhesive resin composition. The adhesive resin composition contains (A) a polyamic acid and (B) a compound having a maleimide group, wherein the (B) compound having a maleimide group is contained in an amount of 10 mass% to 120 mass% inclusive with respect to 100 mass% of the (A) polyamic acid.
C09J 179/08 - PolyimidesPolyesterimidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
B32B 15/088 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique comprenant des polyamides
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C08L 79/04 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principalePolyhydrazidesPolyamide-acides ou précurseurs similaires de polyimides
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C09J 179/04 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principalePolyhydrazidesPolyamide-acides ou précurseurs similaires de polyimides
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
7.
POLYAMIC ACID, POLYAMIC ACID COMPOSITION, POLYIMIDE, POLYIMIDE COMPOSITION, POLYIMIDE FILM, COPPER FOIL WITH RESIN, MULTILAYER WIRING BOARD, COIL STRUCTURE, MAGNETIC DEVICE, AND INSULATED WIRE
This polyamic acid is a polyaddition reaction product of (A) an acid dianhydride and (B) a diamine, wherein (B1) a dimer diamine is contained in a molar ratio of 0.2 or more with respect to the total diamine components, and a fluorine atom is contained in one molecule of a raw material of the polyamic acid.
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
B32B 15/088 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique comprenant des polyamides
H01B 3/30 - Isolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques matières plastiquesIsolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques résinesIsolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques cires
A resin film (100) comprises a core layer (2) and adhesive resin layers (1) provided respectively to both surfaces of the core layer (2), wherein the adhesive resin layers (1) are made of a first adhesive resin composition, which includes a poly(amic acid) that is a product of polyaddition reaction between an acid dianhydride (A) and a diamine (B), or a second adhesive resin composition, which includes an epoxy resin. In the first adhesive resin composition, the poly(amic acid) includes a dimer diamine (B1) at a molar ratio of 0.2 or higher with respect to the whole diamine component. A cured object formed from the second adhesive resin composition has a dielectric breakdown strength of 300 kV/mm or greater. The core layer (2) is a polyimide film comprising a polyimide obtained by imidizing the poly(amic acid) contained in the first adhesive resin composition.
B32B 27/34 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyamides
B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
C09J 7/25 - Matières plastiquesMatières plastiques métallisées à base de composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone
C09J 163/00 - Adhésifs à base de résines époxyAdhésifs à base de dérivés des résines époxy
C09J 179/08 - PolyimidesPolyesterimidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
9.
POLYIMIDE, POLYIMIDE FILM, MULTILAYER WIRING BOARD, COPPER FOIL WITH RESIN, COIL STRUCTURE, MAGNETIC DEVICE, AND INSULATED ELECTRICAL WIRE
The purpose of the present invention is to provide: a polyimide which is capable of forming a polyimide film that exhibits low dielectric properties and low fluidity while exhibiting good film-forming properties and further having excellent embedding properties and adhesion; and a polyimide film, a multilayer wiring board, a copper foil with a resin, a coil structure, and a magnetic device, each of which is produced using the polyimide. The polyimide has (A) a structure derived from an ester-type acid dianhydride and (B) a structure derived from at least two diamines. The (B) diamines include (B1) a dimeric diamine at a molar ratio of 0.3 or more wherein the number of moles of all diamines is 1.0, and at least one terminal is modified with a maleimide group.
H01B 3/30 - Isolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques matières plastiquesIsolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques résinesIsolateurs ou corps isolants caractérisés par le matériau isolantEmploi de matériaux spécifiés pour leurs propriétés isolantes ou diélectriques composés principalement de substances organiques cires
Disclosed is an MMC converter including a three-phase iron core reactor in which three-terminal leg circuits, in which two two-terminal arm power circuits are connected in series, are provided in u, v, and w phases, positive-side and negative-side terminals of the three-terminal leg circuits are each connected in a star shape and thereby connected to a DC power supply, an intermediate terminal is connected to an AC power supply, and a circulating current due to voltage imbalance between the three legs is suppressed, wherein, in order to suppress AC inductance imbalance between the two poles and between the three phases while maintaining the linearity of inductance by avoiding magnetic saturation of each part of the iron core when an AC system accident occurs, the cross-sectional area of a yoke and side legs serving as a return path of DC magnetic flux of each phase of the three-phase iron core reactor is made larger than that of a main leg (a winding iron core with a non-magnetic gap) of each phase, two sets of windings composed of two concentrically arranged coils wound on the main leg of each phase are coaxially arranged on the main leg, and the winding direction of each of the coils and the connection between the coils are optimally selected. Furthermore, auxiliary yokes crossing the central parts of the main legs of the respective phases or side legs longitudinally crossing between the main legs of the respective phases are provided and used as paths for magnetic flux formed by an AC current.
A power semiconductor module (200) comprises: a power semiconductor chip (1) provided with two wiring boards (5, 6) and a power semiconductor element (100A) that is provided between the two wiring boards (5, 6) so as to connect wires (52, 62) to each other, the power semiconductor element (100A) being provided with a first electrode (11) and a second electrode (12) on a first surface (1a), and being provided with a third electrode (14) on a second surface (1b); and a first connection member (2) provided with a first conductive portion (21) that is provided to the first surface (1a) of the power semiconductor chip (1) so as to be electrically connected to the first electrode (11), a second conductive portion (22) that is provided so as to be electrically connected to the second electrode (12) and has a portion protruding outward from the outer peripheral edge of the power semiconductor chip 1 in plan view, and a first insulating layer (23) that wraps around the first conductive portion (21) and the second conductive portion (22). An insulating film (8) is provided to at least one of the wires (52, 62) of the two wiring boards (5, 6).
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/12 - Supports, p. ex. substrats isolants non amovibles
An insulating material (100) comprising a first insulating layer (1) that comprises a first resin composition and a second insulating layer (2) that is provided on at least one surface of the first insulating layer (1) and that comprises a second resin composition, wherein the first resin composition contains an inorganic filler, and the second resin composition does not contain an inorganic filler.
B22F 1/107 - Poudres métalliques contenant des agents lubrifiants ou liantsPoudres métalliques contenant des matières organiques contenant des matériaux organiques comportant des solvants, p. ex. pour la coulée en moule poreux ou absorbant
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
B22F 1/052 - Poudres métalliques caractérisées par la dimension ou la surface spécifique des particules caractérisées par un mélange de particules de dimensions différentes ou par la distribution granulométrique des particules
B22F 7/08 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p. ex. pour former des outils à embouts rapportés avec une ou plusieurs parties non faites à partir de poudre
C09J 11/04 - Additifs non macromoléculaires inorganiques
C09J 11/06 - Additifs non macromoléculaires organiques
H01B 1/00 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
14.
CARBON COATING COMPOSITION FOR SPRAYING AND METHOD FOR FORMING CARBON COATING FILM
A carbon coating composition for spraying contains (A) a resin, (B) a carbon-based filler, and (C) a solvent. The component (B) contains (B1) graphite and (B2) carbon black. The component (C) contains (C1) at least one selected from the group consisting of propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate. The blending amount of the component (C) is from 30 mass% to 70 mass% relative to 100 mass% of the carbon coating composition.
The present invention correctly synchronizes and drives a plurality of external devices connected in parallel. A FPGA 30 is provided with a delay control circuit for delaying PWMs 1, 2, 3 on the basis of Syncs 1, 2, 3. The delay control circuit comprises: a phase difference detection circuit 40 (phase difference detection unit) for detecting a phase difference between the Syncs 1, 2, 3 (input signals), which are inputted from a gate driver/SiC 100; a phase difference time measurement circuit 50 (phase difference time measurement unit) for measuring a phase difference time of the phase difference detected by the phase difference detection circuit 40; a correction rate integration circuit 60 (integration unit) for calculating an integrated value by adding or subtracting the previous phase difference time to or from the current phase difference time measured by the phase difference time measurement circuit 50; a delay time determination circuit 70 (delay time determination unit) for determining a delay time of the PWMs 1, 2, 3 (output signals) on the basis of the integrated value calculated by the correction rate integration circuit 60; and a delay circuit 80 (delay unit) for delaying the PWMs 1, 2, 3 on the basis of the determined delay time.
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H03K 5/00 - Transformation d'impulsions non couvertes par l'un des autres groupes principaux de la présente sous-classe
16.
RESIN FILM, MULTILAYER WIRING BOARD, COPPER FOIL WITH RESIN, COIL STRUCTURE, AND MAGNETIC DEVICE
Provided is a resin film (100) comprising a core layer (2) and adhesive resin layers (1) provided on both surfaces of the core layer (2), wherein each adhesive resin layer (1) is constituted from an adhesive resin composition, and the minimum viscosity of the adhesive resin composition from 40°C to 160°C as measured by a rheometer is 500 Pa·s or more.
B32B 27/00 - Produits stratifiés composés essentiellement de résine synthétique
C09J 7/30 - Adhésifs sous forme de films ou de pellicules caractérisés par la composition de l’adhésif
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p. ex. une résistance, un condensateur, une inductance imprimés
This solder alloy, even when Bi is added, has heat cycle resistance and drop impact resistance, and can form a joining part that suppresses lift-off. The solder alloy comprises 35 mass% to 65 mass% of Bi, 0.1 mass% to 0.65 mass% of Sb, 0.05 mass% to 2 mass% of Ag, and 0.001 mass% to 0.1 mass% of at least one of Ni and Co, with the remainder consisting of Sn and inevitable impurities.
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
B23K 35/22 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par la composition ou la nature du matériau
C22C 12/00 - Alliages à base d'antimoine ou de bismuth
C22C 13/02 - Alliages à base d'étain avec l'antimoine ou le bismuth comme second constituant majeur
The present invention provides a technique for ensuring a long creepage distance. Provided is a current sensor 100, wherein a magnetic core 110, an inner coating part 120, and an outer coating part 130 are integrally provided by two-stage insert molding. As a result of the insert being fixed in the mold during molding, an inner opening 123 is formed in the inner coating 120, and an outer opening 134 is formed in the outer coating 130. However, since the outer opening 134 is separated from the inner opening 123 and does not overlap the inner opening 123, the magnetic core 110 is not exposed from the outer opening 134. Therefore, in the current sensor 100, it is possible to ensure a longer creepage distance than a current sensor in which the magnetic core is exposed from an opening formed in a wall part of a case body. In addition, since a circuit board on which a magnetosensitive element is mounted is positioned in relation to the inner covering part 120 formed integrally with the magnetic core 110, the positional accuracy of the magnetosensitive element with respect to the magnetic core 110 can be further improved.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
Provided are: a molded coil which is inhibited from suffering resin leakage to an opening surface and has excellent heat dissipation properties; and a reactor. A molded coil 1 includes a coil-covering resin 3 which covers a part or the entirety of a coil 2. The coil-covering resin 3 comprises: an edge surface plate 71 which covers a part or the entirety of a cylinder edge surface 25; a side surface plate 72 which is connected to the edge surface plate 71 and covers a part or the entirety of a side surface 27; and a molding resin 9. The side surface 27 adjoins both an opening surface 23, which is uncovered with the coil-covering resin 3, and the cylinder edge surface 25. The edge surface plate 71 has a slit 8 extending from a portion of a side edge 711 of the side surface plate 71 which is located at a corner 722 of the side surface plate 72, along a vertical side 724, which is the boundary between the edge surface plate 71 and the side surface plate 72. The side surface plate 72 is separated from the edge surface plate 71 by the slit 8, but is connected to the edge surface plate 71 at the end 84 of the slit 8.
Provided is a coil device that has good heat dissipation properties and is reduced in size and weight. A magnetic core 2 according to one embodiment of the present invention comprises a first core 20. The first core 20 has a first central leg 21, an annular part surrounding the first central leg 21, and a first yoke 23 connecting the first central leg 21 and the annular part at one end of the first core 20. The end face of the first central leg 21 and the end face of the annular part are formed on the same plane. An annular recessed part capable of housing a coil is formed between the first central leg 21 and the annular part.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre euxFixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
Provided are: a molded coil manufacturing method with which the length of a coil in a winding axis direction can be adjusted while suppressing deformation of the coil; and a molded coil. The molded coil manufacturing method for mold fabricating a coil comprises: a winding step in which a coil 2 is wound so as to make the length of the coil in a winding axis direction longer than a desired length; an accommodation step in which the coil 2 is accommodated in a mold; a pressing step in which, after the accommodation step, the coil 2 is pressed in the winding axis direction by a pressing member 9; and an injection step in which, after the pressing step, a resin is injected into the mold. The coil 2 has a pressing surface 26 which is one end surface that is orthogonal to the winding axis. In the pressing step, the pressing member 9 presses the pressing surface 26, and in the injection step, the resin is injected toward the pressing surface 26. The pressing surface 26 is pressed by the pressing member 9 and by the injection pressure of the resin.
Provided is a drive circuit apparatus capable of ensuring satisfactory insulation between an input-side component and an output-side component. In the present invention, a gate driver is provided with: a driver substrate 101 that can be mounted on an IGBT module which is an external device to be driven; input-side wiring patterns 301, 302 arranged on the driver substrate 101; output-side wiring patterns 303, 304 arranged on the driver substrate 101; and a plurality of slits S1-S7 that have different shapes and that are formed through the driver substrate 101 at positions intersecting lines L1, L2, L3 (virtual lines) which connect the input-side wiring patterns 301, 302 and the output-side wiring patterns 303, 304 with straight lines (arbitrarily defined straight lines, for example, straight lines having the shortest distance or a distance longer than the shortest distance).
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
In the present invention, the temperature drop in a buffer part between zones is prevented. This conveying heating apparatus is provided with: a heating device in which a plurality of heating furnaces are arranged and which is configured so as to blow hot air to an object to be heated by the heating furnaces; a buffer part which is present between the heating furnaces; a carrying conveyor that conveys the object to be heated; and a tubular infrared lamp heater provided in the buffer part so that the longitudinal direction thereof crosses the conveyance direction of the object to be heated.
F27B 9/36 - Aménagement des dispositifs de chauffage
F27B 9/02 - Fours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité à trajets multiplesFours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité à plusieurs chambresCombinaisons de fours
F27B 9/06 - Fours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité chauffés sans contact entre gaz de combustion et la chargeFours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité chauffés électriquement
COIL STRUCTURE AND METHOD FOR MANUFACTURING SAME, MULTILAYER SUBSTRATE CIRCUIT USING COIL STRUCTURE, MAGNETIC DEVICE, AND COPPER FOIL WITH RESIN FOR COIL STRUCTURE
Provide are a coil structure, a multilayer circuit board, and a magnetic device with which it is possible to achieve excellent withstand voltage characteristics and low capacitance between coils without using a glass cloth. A coil structure C comprises: coil patterns 21, 22, 23 which are planar conductors each wound on a plane; and an insulating material 1 for providing insulation between the coil patterns 21, 22, 23. The coil patterns 21, 22, 23 and the insulating material 1 are alternately laminated. The insulating material 1 is a cured product of an insulating resin composition that does not contain glass cloth. A multilayer circuit board P includes the coil structure C. A magnetic device D is constituted by laminating a plurality of the coil structures C and the multilayer circuit boards P, and mounting a core 4 thereon.
H01F 27/32 - Isolation des bobines, des enroulements, ou de leurs éléments
H01F 17/00 - Inductances fixes du type pour signaux
H01F 17/04 - Inductances fixes du type pour signaux avec noyau magnétique
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p. ex. une résistance, un condensateur, une inductance imprimés
25.
SOLDER ALLOY, JOINT PART, JOINING MATERIAL, SOLDER PASTE, JOINT STRUCTURE, AND ELECTRONIC CONTROL DEVICE
This solder alloy can form, while containing Bi, a joint part which has heat-cycle resistance and falling impact resistance and in which occurrence of lift-off is suppressed. The solder alloy contains 35-65 mass% of Bi, 0.1-0.65 mass% of Sb, and 0.05-2 mass% of Ag, the remaining portion being Sn and unavoidable impurities.
Provided is a junction barrier Schottky diode 1 equipped with an n-type semiconductor layer 11 having a plurality of trenches 111, a plurality of p-type semiconductor parts 12 disposed so as to be in contact with the inner surfaces of the trenches 111, and an anode electrode 13 disposed so as to be in contact with mesa-shaped portions 112 of the n-type semiconductor layer 11, wherein the p-type semiconductor parts 12 each comprise a first portion 121, which covers the inner surface of the trench 111, and a second portion 122, which covers the brims of the trench 111 in the first surface 113 of the n-type semiconductor layer 11.
H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
This solder alloy can provide a joint part having heat cycle resistance and drop impact resistance, the solder alloy containing 45%-63% by mass of Bi, 0.1% by mass or more and less than 0.7% by mass of Sb, 0.05%-1% by mass of In, and the remainder made up of Sn and inevitable impurities, wherein the liquidus temperature is 170°C or less.
This solder alloy has a liquidus temperature of at most 170ºC and can form a joint part having heat cycle resistance and drop impact resistance. The solder alloy contains 45-63 mass% of Bi, 0.1-1 mass% of Sb, 0.05-1 mass% of Cu, and a total of 0.001-0.1 mass% of one or more selected from among Ni and Co, with the remainder consisting of Sn and inevitable impurities, and has a liquidus temperature of at most 170ºC.
This solder alloy makes it possible to form a joint part having heat cycle resistance and drop impact resistance, the solder alloy containing 45-63 mass% inclusive of Bi, 0.1-1 mass% inclusive of Sb, 0.05-1 mass% inclusive of In, and a total of 0.001-0.1 mass% inclusive of one or more elements selected from Ni and Co, with the remainder made up by Sn and unavoidable impurities.
Provided is a technology capable of realizing a new structure. A shield layer 50 is disposed on a first surface 11a or a third surface 13a of a case 10 of an electronic component unit (current sensor) while the shield layer 50 is not disposed on a second surface 12a. Thus, compared with a method for disposing the shield layer on the entire inner surface of the case 10, manufacturing cost can be reduced by limiting the disposition of the shield layer 50. In addition, the shield layer 50 is disposed on the first surface 11a or the third surface 13a in which the effect of the shield layer 50 is easily exerted, while the shield layer 50 is not disposed on the second surface 12a in which the effect of the shield layer 50 is reduced. Thus, it is possible to efficiently improve dV/dt characteristics (output characteristics) of the electronic component unit (current sensor).
H05K 9/00 - Blindage d'appareils ou de composants contre les champs électriques ou magnétiques
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G12B 17/02 - Écrans contre les champs électriques ou magnétiques, p. ex. ondes radio
Technologies for improving the quality of an electronic component unit are provided. A shield layer 50 is disposed on a first surface 11a, a second surface 12a, and a third surface 13a of a case 10 of an electronic component unit (electric current sensor). For the shield layer 50, various pastes (carbon paste and magnetic paste) are adopted. As the pastes can be freely applied to a desired location, an optimum shield structure can be constructed, making it possible to readily achieve improvements in both dV/dt characteristics and EMC characteristics. Further, the addition of the magnetic pastes makes it possible to provide a shield against radio noise bands (frequency bands on the order of 0.1 to 5.0 MHz). In addition, because the shield layer 50 is formed by means of a paste, construction is less expensive than with the use of metal shields (vacuum film formation by vapor deposition or sputtering).
Provided is a conveying heating apparatus with reduced temperature interference between zones and also allowing for variety-switching work associated with a temperature drop to be performed rapidly. The conveying heating apparatus includes a heating apparatus in which a plurality of heating furnaces are arranged and which is configured to blow hot air against a workpiece by means of the heating furnaces, and a conveyor that brings the workpiece to the heating apparatus, wherein each of the heating furnaces comprises an upper furnace body and a lower furnace body, a box-shaped upper temperature regulation unit is disposed ahead or behind, in the conveying direction, the upper furnace body of at least a subset of the heating furnaces, a box-shaped lower temperature regulation unit is disposed ahead or behind, in the conveying direction, the lower furnace body of at least a subset of the heating furnaces, and each of the upper and lower temperature regulation units has a medium inlet and a medium outlet.
F27B 9/02 - Fours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité à trajets multiplesFours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité à plusieurs chambresCombinaisons de fours
F27B 9/12 - Fours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité avec dispositions particulières pour le préchauffage ou le refroidissement de la charge
F27D 9/00 - Refroidissement des fours ou des charges s'y trouvant
The present invention prevents temperature unevenness in an object to be heated. This conveying heating apparatus is provided with a heating device in which multiple heating furnaces are arranged and which is configured to blow hot air by the heating furnaces to an object to be heated, and a conveyor for carrying the object into the heating device, wherein: each of the heating furnaces is formed from an upper furnace body and a lower furnace body; each heating furnace is provided with fans respectively provided in the upper furnace body and lower furnace body, pressurizing chambers respectively provided in the upper furnace body and lower furnace body, and flow straightening plates which are provided in the pressurizing chambers and to which hot air is blown from the fans; and the flow straightening plates are provided only on the outer side of the outer circumference of the fans.
Provided is a thermosetting resin composition capable of reducing the dielectric loss tangent while having high permittivity. A thermosetting resin composition containing (A) an epoxy compound, (B) a compound having a maleimide group, (C) an inorganic filler, and (D) a thermosetting catalyst, the (C) inorganic filler containing (C1) metal oxide particles, and the (C1) metal oxide particles constituting 50-90 mass% inclusive of the solids fraction of the thermosetting resin composition.
C08G 59/40 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les agents de durcissement utilisés
Provided is a core positioning technology. A current sensor 100 comprises: a pair of core members 104 that are positioned assembled together in a ring shape around a primary conductor, in a condition in which respective end surfaces 104a of both end sections of each have been made to face each other; a case body 102 that has an insertion section 103 through which the primary conductor can be inserted, and accommodates the pair of core members 104 in the interior thereof via an opening that is formed in a ring shape around the insertion section 103; spring spacers 108 that produce a force pressing the pair of core members 104 together in the facing direction from outside surfaces thereof, which are on the opposite sides from the respective end surfaces 104a; gap spacers 106 that are respectively positioned in locations where the respective end surfaces 104a of the pair of core members 104 are facing, receive the respective end sections of the core members into pairs of recessed sections 106a, and in this condition form gaps between the end surfaces 104a and suppress displacement of the core members 104; and a circuit board 110.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
36.
JUNCTION BARRIER SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SAME
Provided are a junction barrier Schottky diode having a trench structure that has high surge resistance and reduced energy loss during switching operation, and a method for manufacturing the same. An embodiment provides a junction barrier Schottky diode 1 comprising: an n-type semiconductor layer 11 having a plurality of trenches 111; a p-type semiconductor film 12 provided in contact with an inner surface of the a plurality of trenches 111; an anode electrode 13 which is provided on a first surface 113 of the n-type semiconductor layer 11 and in contact with a mesa-shaped portion 112 of the n-type semiconductor layer 11, a part of the anode electrode 13 being covered by the p-type semiconductor film 12 in the plurality of trenches 111; and a cathode electrode 14 provided on a second surface 114 of the n-type semiconductor layer 11 directly or with another layer therebetween.
H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
Provided are a solder alloy, a solder joining member, a solder paste, and a semiconductor package with which it is possible to suppress any separation of a solder joining part and a semiconductor element at the interface between these two components. This solder alloy contains 1.1-8 mass% inclusive of Cu, 6-20 mass% inclusive of Sb, 0.01-0.5 mass% inclusive of Ni, and 0.001-1 mass% of Co, the balance being Sn.
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
B23K 35/22 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par la composition ou la nature du matériau
C22C 13/02 - Alliages à base d'étain avec l'antimoine ou le bismuth comme second constituant majeur
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
Provided is a bonding material that is capable of suppressing the occurrence of cracking in a bonding part and capable of suppressing the occurrence of cracking in a semiconductor element even when under the load of a particularly high temperature, said bonding material having a base material part and a solder layer that covers the upper surface and the lower surface of the base material part, wherein the base material part has: a core base material; and a first metal layer and a second metal layer that are on at least one surface of the core base material in this order from the core base material side, and the solder layer comprises a solder alloy containing 1-8 mass% of Cu, 10-30 mass% of Sb, 0.01-0.5 mass% of Ni, and 0.001-0.5 mass% of Co, with the remainder being Sn.
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
B23K 35/14 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par des propriétés mécaniques, p. ex. par la forme non spécialement conçus pour servir d'électrodes pour le brasage
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
C22C 13/02 - Alliages à base d'étain avec l'antimoine ou le bismuth comme second constituant majeur
H01L 29/201 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV comprenant plusieurs composés
Provided is a gallium oxide-based semiconductor substrate configured to allow the formation, by HVPE, of a gallium oxide-based epitaxial film having a small film thickness distribution, a small donor concentration distribution, and a low crystal defect density. Also provided are a semiconductor wafer including the semiconductor substrate and the epitaxial film, and a method for manufacturing the semiconductor wafer. As one embodiment, provided is a semiconductor substrate 10 in which at least one main surface thereof is a crystal growth base surface 11. The semiconductor substrate 10 comprises a single crystal of a gallium oxide-based semiconductor. The growth base surface 11 is the (001) plane. In a continuous region of 70 area% or more of the growth base surface 11, the off angle in the [010] direction is in the range from greater than -0.3° to -0.01°, or in the range from 0.01° to smaller than 0.3°. In said region of the growth base surface 11, the off angle in the [001] direction is in the range from -1° to 1°. The diameter of the semiconductor substrate 10 is 2 inches or more.
H01L 21/365 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
Provided is a conveying heating apparatus with which it is possible to prevent generation of waste metal and suppress variations in in-plane temperature distribution of a substrate. This conveying heating apparatus comprises: a heating device which has arrayed therein one or more heating furnaces and which is configured to cause the heating furnaces to blow hot air onto an object to be heated; and a conveyance conveyor which conveys a substrate into the heating device. The conveyance conveyor is provided with: a conveyance chain that comprises opposing link plates, a shaft or roller disposed between the link plates, and an attachment for mounting a substrate thereon; a metal rail which has a U-shaped cross-section formed by contiguously connecting a top surface, an under surface, and a lateral surface, and in which the conveyance chain is disposed in a space between the top surface and the under surface; and a plurality of rod-like underside resin guides which comprise a heat-resistant, non-conductive resin and are inserted in a groove formed in the under surface of the metal rail so as to extend in the conveyance direction and which are brought into contact with the under surface of the shaft or roller.
B65G 21/22 - Rails ou éléments analogues d'engagement à glissières ou à rouleaux fixés aux porte-charges ou aux éléments de traction
F27B 9/24 - Fours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité caractérisés par le trajet de la charge pendant le traitementFours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité caractérisés par le procédé de déplacement de la charge pendant le traitement la charge se déplaçant sur un trajet sensiblement rectiligne sur un transporteur
F27B 9/30 - Parties constitutives, accessoires ou équipement spécialement adaptés à ces types de fours
By containing 0.1-3 mass% Ag, 8-15 mass% Cu and 30-40 mass% Sb, and the remainder being Sn, a solder alloy is provided which, even in high temperature environments, suppresses re-melting of a solder joint that is formed.
C22C 13/02 - Alliages à base d'étain avec l'antimoine ou le bismuth comme second constituant majeur
C22C 30/04 - Alliages contenant moins de 50% en poids de chaque constituant contenant de l'étain ou du plomb
B23K 35/22 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par la composition ou la nature du matériau
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
Provided are: a photosensitive resin composition from which a photocured product having excellent film sticking prevention properties and bending properties without impairing basic characteristics of insulation reliability and heat resistance can be obtained; and a wiring board having a photocured film of said photosensitive resin composition. This photosensitive resin composition contains (A) a carboxyl group-containing photosensitive resin, (B) a photopolymerization initiator, (C) a reactive diluent, (D) an epoxy compound, (E) urethane beads, and (F) a fine powdery inorganic filler.
C08G 59/68 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les catalyseurs utilisés
The present invention provides a photosensitive resin composition which has excellent dispersibility during storage and preservation, is capable of reducing the water absorption coefficient, and is capable of forming a cured film having excellent bendability and insulation reliability. The photosensitive resin composition comprises (A) a photosensitive resin containing carboxyl groups, (B) an epoxy compound, (C) urethane beads, (D) a photopolymerization initiator, and (E) a reactive diluent,. The urethane beads (C) are coated by silica, and at least 20 mass% of 100 mass% of the silica is hydrophobic silica.
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
In the present invention, a MMC converter comprises three two-terminal arms on a P terminal side, and another three on an N-terminal side. An induction element between the P-terminal-side and the N-terminal-side arms includes a reactor provided with UP, UN coils wound concentrically on an iron core leg, a reactor provided with VP, VN coils wound concentrically on the iron core leg, and a reactor provided with WP, WN coils wound concentrically on the iron core leg. A first terminal of the UP coil and a second terminal of the UN coil, a first terminal of the VP coil and a second terminal of the VN coil, and a first terminal of the WP coil and a second terminal of the WN coil are connected. A second terminal of the UP coil is connected to a first terminal of a UP arm, a first terminal of the UN coil is connected to a second terminal of a UN arm, a second terminal of the VP coil is connected to a first terminal of a VP arm, a first terminal of the VN coil is connected to a second terminal of a VN arm, a second terminal of the WP coil is connected to a first terminal of a WP arm, and a first terminal of the WN coil is connected to a second terminal of a WN arm. Each coil is wound in the direction in which the iron core leg is excited by current passing through from the N terminal to the P terminal.
22222 concentration threshold value; and a notification unit 30 that notifies a first message indicating that the room is a poorly ventilated closed space for infectious disease control on the basis of the first notification signal.
In order to provide a flux, a solder paste, an electronic circuit mounting board, and an electronic control device that can suppress whiskering in a solder-joined section and demonstrate good solderability and storage stability, this flux includes a base resin, an organic acid, a heterocyclic compound, and a solvent, wherein in relation to the total mass of the flux, greater than or equal to 0.05 mass% and less than 15 mass% of a compound represented by general formula (1) is included as the organic acid, and in relation to the total mass of the flux, greater than or equal to 0.05 mass% and less than 15 mass% of the heterocyclic compound is included. (In general formula (1), X is at least one option selected from among one or more carboxyl groups, an alkyl group, and a hydrogen atom. These substituents and hydrogen atom are not limited in location or number, and X may be one or a combination of several of these.)
Provided is a vending machine control device having higher safety against electrical impact from the outside than when electrical energy stored in a power storage part is not used for unlocking an electric lock. A vending machine 2 comprises: a mechanical lock 13 for mechanically locking and unlocking a door of the vending machine 2 by a mechanical key 140; an electromagnetic lock 11 for electrically locking and unlocking the door; a capacitor 121 for storing electrical energy; and a controller 200 for performing control to unlock the electric lock 11 by the electrical energy stored in the capacitor 121.
2323233-based single crystal, on the growth substrate surface 11 of the semiconductor substrate 10, wherein the flow inlet of the dopant-containing gas to the space 24 is positioned higher than the flow inlet of the oxygen-containing gas to the space 24, and the flow inlet of the Ga chloride gas to the space 24 is positioned higher than the flow inlet of the dopant-containing gas to the space 24.
C30B 25/14 - Moyens d'introduction et d'évacuation des gazModification du courant des gaz réactifs
C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
H01L 21/365 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
52.
SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
23233-based semiconductor; a step for fixing an epitaxial layer 12 side of the semiconductor wafer 10 to a support substrate 21; a step for making a substrate 11 of the semiconductor wafer 10 thinner; a step for forming a cathode electrode 16 on the bottom surface of the substrate 11; a step for adhering a metal plate 23 on the bottom surface of the cathode electrode 16; and a step for obtaining a plurality of SBD1 each comprising the metal plate 23 by dicing the semiconductor wafer 10 to make individual pieces.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p. ex. cloisonnement en zones séparées
Provided is a gate drive circuit that is provided with an active clamp for protecting portions between a collector and an emitter of an IGBT, that suppresses heat generation of a constant voltage diode, and that generates a limited amount of noise. This gate drive circuit is provided with a clamp circuit that clamps a voltage between a collector (hereinafter referred to as C) and an emitter (hereinafter referred to as E) of a power semiconductor element. The clamp circuit has: a constant voltage diode (hereinafter referred to as D) connected to C; an impedance circuit connected between the other end of the constant voltage D and a minus power supply; a first drawing circuit that has one end connected to a connection point between the constant voltage D and the impedance circuit and that comprises a first switch (hereinafter referred to as SW) and a first resistor; a second drawing circuit that comprises the second SW and a second resistor that are connected in a similar manner to the connection regarding the first drawing circuit; and a detection circuit that, when a change rate of a C voltage has exceeded a threshold value, outputs a SW open signal. When the SW open signal has been received, the second SW is changed from a conduction state to a non-conduction state.
H03K 17/08 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p. ex. BIMOS, dispositifs composites tels que IGBT
H02M 1/00 - Détails d'appareils pour transformation
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
2323233-based semiconductor, a cathode electrode 13 which is connected to the substrate 11, and an anode electrode 14 which is connected to the epitaxial layer 12 and has a field plate part 140 on an outer peripheral part. The SBD 10 is fixed on the projection 200, and an outer peripheral part 120 of the epitaxial layer 12 is located right above a flat part 201 of the lead frame 20.
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
Provided is a gate drive circuit that achieves improvement of the accuracy of mask time and improvement of tolerance to malfunctions. A gate drive circuit for driving a power semiconductor switch according to the present invention comprises: a comparison circuit that compares a collector-emitter voltage of the power semiconductor switch with a predetermined threshold voltage; and a time measurement circuit that starts a time measurement when the comparison circuit detects that the collector-emitter voltage exceeds the threshold voltage, wherein the gate drive circuit is characterized in that the time measurement circuit includes an output circuit that, after measuring a wait hold time (mask time), outputs an abnormality signal meaning that the power semiconductor switch is in an abnormal state.
H03K 17/08 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p. ex. BIMOS, dispositifs composites tels que IGBT
H02M 1/00 - Détails d'appareils pour transformation
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
The purpose of the present invention is to provide a gate drive circuit using a simpler circuit and equipped with a faster switch circuit, while suppressing cost increases. The gate drive circuit drives a semiconductor switch on the basis of a control signal. The gate drive circuit is provided with: an input terminal; a high-side switch connected to a positive-side power supply; a low-side switch connected to a negative-side power supply; a first differentiating circuit which is connected to the positive-side power supply and which differentiates and supplies the control signal to the high-side switch; a second differentiating circuit which is connected to the negative-side power supply and which differentiates and supply the control signal to the low-side switch; an output terminal for outputting a driving signal; a first impedance circuit connected between the high-side switch and the output terminal; and a second impedance circuit connected between the high-side switch and the output terminal.
H03K 17/04 - Modifications pour accélérer la commutation
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p. ex. BIMOS, dispositifs composites tels que IGBT
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
57.
SINGLE CRYSTAL INGOT, CRYSTAL GROWTH DIE, AND SINGLE CRYSTAL PRODUCTION METHOD
An as-grown single crystal ingot 1 of a dopant-containing metal oxide or quasi-binary compound is provided in which a lateral surface 221 has a length L greater than or equal to 50 mm, there is a linear recess 222 on the lateral surface 221, and, in the area surrounded by the lateral surface 221, the outer shape of the cross-section perpendicular to the length direction and positioned spaced 50 mm away in the length direction from the other end in the length direction without with the recess 222 is such that, outside of the area formed by the line of intersection between the cross-section and a faceted surface, the maximum value of the distance X of the recess 222 from an ideal outer shape 30 is less than or equal to 5 mm.
Provided is a wavelength conversion member 1 which comprises a substrate 10 and a wavelength conversion layer 11 that includes a phosphor particle group 12 and a sealing member 13 for sealing the phosphor particle group 12 and that is provided on the substrate 10 directly or with another layer therebetween, wherein: a predetermined region, in which the area ratio of the cross-section of the phosphor particle group 12 is 50% or more, is included in an arbitrary cross-section parallel to the thickness direction of the wavelength conversion layer 11; when the thickness of the wavelength conversion layer 11 is at least 50 μm, the predetermined region is a rectangular region that has a thickness of 50 μm from the bottom surface of the wavelength conversion layer 11 and a width of 700 μm; and when the thickness of the wavelength conversion layer 11 is less than 50 μm, the predetermined region is a rectangular region that has the same thickness as that of the wavelength conversion layer 11 and a width of 700 μm.
The present invention uses a simpler circuit structure to provide a high-side driver for a gate drive circuit that uses an N-channel MOSFET. A high-side driver circuit that is a circuit that drives a power semiconductor switch. The high-side driver circuit comprises a main switch N-channel MOSFET that has a drain terminal that is connected to a plus-side Vdc of a power supply and has a source terminal that is connected to an OUT terminal for a signal that drives the power semiconductor switch, a charge storage circuit that stores charge from the Vdc, and a voltage detection–capable switch that detects the voltage difference between an output terminal of the charge storage circuit and the Vdc and, upon detecting that the output terminal voltage of the charge storage circuit is at least a specific voltage higher than the voltage of a plus-side Vcc of the power supply, applies part or all of the output voltage of the charge storage circuit to a gate terminal of the main switch N-channel MOSFET.
H03K 17/06 - Modifications pour assurer un état complètement conducteur
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p. ex. BIMOS, dispositifs composites tels que IGBT
Provided is a wavelength conversion member 1 comprising a sintered product of a phosphor, wherein the average diameter of pores in an arbitrary cross section falls within the range from 0.28 to 0.98 μm inclusive, the ratio of the areas of pores to the whole area in an arbitrary cross section falls within the range from 0.04 to 2.7% inclusive, and the average diameter of grains of the phosphor in an arbitrary cross section falls within the range from 1 to 3 μm inclusive.
C09K 11/00 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes
C09K 11/64 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant de l'aluminium
C04B 35/44 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'aluminates
C04B 35/50 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de composés de terres rares
23233-based single crystal and comprising: an n-type semiconductor layer 11 having a plurality of trenches 12 opening on one side; an anode electrode 13 connected to mesa-shaped regions between adjacent trenches 12 of the n-type semiconductor layer 11; an anode electrode 16 embedded in each of the plurality of trenches 12 in a state of being coated with a trench insulating film 15; a cathode electrode 14 connected directly or indirectly to the side of the n-type semiconductor layer 11 opposite to the anode electrode 13; and a p-type semiconductor member 17 connected to a part of the mesa-shaped regions and to the anode electrode 13.
A molding solder according to the present invention is a molding solder that contains: a solder alloy; and a high-melting point metal having a higher melting point than the solder alloy. The molding solder is characterized in that in a cross section of the molding solder, when an element analysis is performed by using a energy dispersive X-ray spectrometer to classify the cross-section of the molding solder into a first phase composed of a solder alloy, a second phase composed of a high-melting point metal, and a third phase composed of the solder alloy and the high-melting point metal, the area ratio of the first phase is at least 15% with respect to 100% of the total sum area of the first phase, second phase, and third phase, and the area ratio of the second phase is at least 25% with respect to 100% of the total area of the first phase, second phase, and third phase.
B23K 35/14 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par des propriétés mécaniques, p. ex. par la forme non spécialement conçus pour servir d'électrodes pour le brasage
B23K 35/40 - Fabrication de fils ou de barres pour le brasage ou le soudage
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
In order to make it possible to achieve thermal fatigue resistance even in environments having extremely severe differences in temperature such as between -40ºC and 175ºC and minimize the development of cracks occurring in a solder joint section even in harsh environments in which such extremely severe differences in temperature and vibration are applied, the present invention provides a lead-free solder alloy characterized by comprising 2.0-4.0 mass% of Ag, 0.3-0.7 mass% of Cu, 1.2-2.0 mass% of Bi, 0.5-2.1 mass% of In, 3.0-4.0 mass% of Sb, 0.001-0.05 mass% of Ni, 0.001-0.01 mass% of Co, and a remainder of Sn.
[Problem] To provide a Schottky barrier diode which is less vulnerable to insulation damage caused by electric field concentration. [Solution] The Schottky barrier diode according to this disclosure comprises: a semiconductor substrate 20 which is made from gallium oxide; a drift layer 30 which is made from gallium oxide and is provided on top of the semiconductor substrate 20; an anode electrode 40 which is in Schottky contact with the drift layer 30; a cathode electrode 50 which is in ohmic contact with the semiconductor substrate 20; an insulating layer 80 which is provided on the drift layer 30 and which surrounds the anode electrode 40 in plan view; and a semiconductor layer 70 which has the reverse conductivity of the drift layer 30 and which is provided to the surface of the drift layer 30 positioned between the anode electrode 40 and the insulating layer 80, while also being provided on the insulating layer 80.
[Problem] To provide a Schottky barrier diode that is less vulnerable to insulation damage caused by electric field concentration. [Solution] This Schottky barrier diode comprises: a semiconductor substrate 20 that is made from gallium oxide; a drift layer 30 that is made from gallium oxide and provided on the semiconductor substrate 20; an anode electrode 40 that is in Schottky contact with the drift layer 30; and a cathode electrode 50 that is in Ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in plan view. The surface of the drift layer 30 positioned between the anode electrode 40 and the outer peripheral trench 10 is covered by a semiconductor layer 70 having the opposite conductivity type from the drift layer 30.
A solder composition according to the present invention is characterized by comprising: a flux composition containing (A) a rosin resin, (B) an activator, and (C) a solvent; and (D) a solder powder having a melting point of 200-250°C, wherein the (B) component contains at least one substance selected from the group consisting of (B1) aromatic carboxylic acids having a hydroxy group only at the ortho position or the pros position, (B2) dicarboxylic acids having an alkylene group and having 2-8 carbon atoms, and (B3) monocarboxylic acids having an alkyl group and having 2-8 carbon atoms, and the component (C) contains (C1) a diol or a diol diacetate having a boiling point of 220–250°C.
, , 0.1 to 0.5% by mass inclusive of Cu, 1 to 3% by mass inclusive of Sb, 2 to 3% by mass inclusive of In, 0.01 to 0.05% by mass inclusive of Ni and 0.001 to 0.015% by mass inclusive of Co, with the remainder made up by Sn.
Provided are: a lead-free solder alloy, which is a means that can achieve both of a cracking propagation prevention effect and resistance to impact associated with high-speed deformation at a solder joint part under an environment where the temperature difference is extreme, and which can be used suitably particularly in an in-vehicle electronic mounted substrate and an in-vehicle electronic control device, the lead-free solder alloy being characterized by containing 2 to 4% by mass inclusive of Ag, 0.3 to 1% by mass inclusive of Cu, 1.5% by mass or more and less than 3% by mass of Bi, and 1% by mass or more and less than 3% by mass of In, with the remainder made up by Sn; a solder paste; an electronic circuit-mounted substrate; and an electronic control device.
The purpose of the present invention is to provide a voice communication system with which it is possible, in a wireless apparatus having a base unit and an extension connected by one line, to adjust the type or level of a voice transmitted from the base unit to the extension by operation from the extension. A base unit 1 and an extension 2 are connected by one line of wireless communication. A main device 3 outputs telephone call data to the base unit 1, the telephone call data being transmitted to the extension 2 by the base unit 1. A telephone call data processing unit 32 processes the telephone call data inputted to the main device 3, the processing being performed on the basis of a command from the extension 2. A command generation unit 26 generates a command that indicates the content of processing of voice data and/or music data by the telephone call data processing unit 32.
Provided is a wireless intercom system capable of facilitating sharing information among a calling slave set, a responded slave set and other slave sets in a simultaneous calling mode. A wireless intercom system 1 comprises a master device 2 and a plurality of slave sets 4 capable of communicating with the master device 2. The slave set 4 includes a mode setting unit 42 for setting a communication mode for other slave sets 4. A voice processing unit 23 includes a voice mixing unit 232 and a voice distribution unit 233. In a simultaneous talking mode, the voice mixing unit 232 mixes taking voices between a calling slave set 4C and a responding slave set 4A, and the voice distribution unit 233 distributes the mixed talking voices to the calling slave set 4C, the responding slave set 4A, and the other slave sets 4.
H04M 3/56 - Dispositions pour connecter plusieurs abonnés à un circuit commun, c.-à-d. pour permettre la transmission de conférences
H04M 9/00 - Dispositions d'interconnexion ne comportant pas de commutation centralisée
H04W 4/06 - Répartition sélective de services de diffusion, p. ex. service de diffusion/multidiffusion multimédiaServices à des groupes d’utilisateursServices d’appel sélectif unidirectionnel
[Problem] To provide a Schottky barrier diode in which a dielectric breakdown due to electric field concentration is unlikely to occur. [Solution] A Schottky barrier diode comprises: a semiconductor substrate 20 made of gallium oxide; a drift layer 30 made of gallium oxide provided on the semiconductor substrate 20; an anode electrode 40 which comes in Schottky contact with the drift layer 30; and a cathode electrode 50 which comes in ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 surrounding, in planar view, the anode electrode 40, and the outer peripheral trench 10 is embedded in a semiconductor material 11 of a conductivity type reverse to that of the drift layer 30. Where the outer peripheral trench 10 embedded in a semiconductor material 11 of a conductivity type reverse to that of the drift layer 30 is thus provided, the electric field is dispersed due to the presence of the outer peripheral trench 10. As a result, the electric field concentration at the corners of the anode electrode 40 is alleviated, so that dielectric breakdown hardly occurs.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 29/41 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative
Provided are: a wavelength conversion member that has excellent coupling efficiency with respect to an optical system; and a wavelength conversion element that includes a layer comprising said wavelength conversion member. One embodiment according to the present invention provides a wavelength conversion member 1 which comprises a sintered body of groups of fluorescence substance particles, wherein, in a given cross section, the area ratio of voids to the entire cross-sectional area falls within a range of 0.6-25%.
C09K 11/80 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'aluminium ou du gallium
C30B 29/28 - Oxydes complexes de formule A3Me5O12, dans laquelle A est un métal des terres rares et Me est Fe, Ga, Sc, Cr, Co ou Al, p. ex. grenats
73.
LEAD-FREE SOLDER ALLOY, ELECTRONIC CIRCUIT MOUNTING BOARD, AND ELECTRONIC CONTROL DEVICE
Provided are a lead-free solder alloy, an electronic circuit mounting board, and an electronic control device. The lead-free alloy serves as a means for allowing the heating conditions during soldering to be the same as or less than that of Sn-3Ag-0.5Cu solder copper, for preventing cracks from spreading in solder joints even in harsh environments in which there are dramatic differences between hot and cold as well as vibration loads, and for preventing cracks from spreading in areas near the interface between a solder joint and the electrode of an electronic component even when creating solder joints using an electronic component that has not been plated with Ni/Pd/Au or with Ni/Au. The lead-free solder alloy is characterized by comprising 2.5-4 mass% Ag, 0.6-0.75 mass% Cu, 2-6 mass% Bi, 0.01-0.04 mass% Ni, and 0.01-0.04 mass% Co, the remainder being Sn, where the total content of Ni and Co is no more than 0.05 mass%.
23233 single crystal and has a trench 12; an anode electrode 13; a cathode electrode 14; an insulating film 15; and a trench electrode 16. This trench MOS Schottky diode 1 is configured such that the second semiconductor layer 11 has an insulating dry etching damaged layer 11a, which has a thickness of 0.8 μm or less, in a region that includes the inner surface of the trench 12.
H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
H01L 29/41 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative
Provided is a wavelength conversion member in which a phosphor is used, the wavelength conversion member having exceptional temperature characteristics and heat dissipation properties, and having light distribution characteristics approximating Lambertian light distribution. As an embodiment of the present invention, there is provided a wavelength conversion member 1 comprising a sintered compact of a single-crystal-phosphor particle group and having a predetermined shape.
C09K 11/80 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'aluminium ou du gallium
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
Provided is a reactor in which deformation of a resin material in a gap between partial cores is suppressed. The present invention has: a core 10 including T-shaped cores 12a, 12b that are a pair of partial cores disposed with a gap G therebetween; a coil 20 attached to portions of the T-shaped cores 12a, 12b; and a core case 62 which is a core mold part 6 formed integrally with a resin material and covering the T-shaped cores 12a, 12b, wherein the core case 62 has a connecting part 621 which, at a position corresponding to the gap G, is interposed between the T-shaped cores 12a, 12b, and the connection part 621 has a through-hole 622 and a pair of linkage parts 624 that face each other with the through-hole interposed therebetween and link the T-shaped cores 12a, 12b.
Provided is a reactor equipped with a current sensor in which linearity can be maintained in the relationship between magnetic flux density and input electromotive force. An annular core 11 has: two leg parts 1a disposed in parallel; and two yoke parts 1b disposed to connect end sections of the two leg parts 1a. A coil 2 is mounted on at least one of the leg parts 1a. In a corner section between the leg parts 1a and yoke parts 1b, a sensor core 3 protrudes further toward the outside of the annular core 11 than the outer circumferential surface of the annular core 11. A notch 3a is provided in the sensor core 3. A magnetic field detection element 5 of the current sensor is mounted inside the notch 3a.
[Problem] To provide a Schottky barrier diode that is not susceptible to dielectric breakdown caused by concentration of an electric field. [Solution] The present invention is provided with: a semiconductor substrate 20 made of gallium oxide; a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20; an anode electrode 40 in Schottky contact with the drift layer 30; and a cathode electrode 50 in ohmic contact with the semiconductor substrate 20. The drift layer 30 has a plurality of trenches 60 provided in positions overlapping the anode electrode 40 in plan view. A width W2 of trenches 60a positioned on the ends of the plurality of trenches 60 is selectively enlarged. Due to this configuration, the radius of curvature of the bottom of the trenches 60a is enlarged, or an edge section constituted by the bottom when viewing the trenches 60a in a cross section is separated into two. This results in a reduction in the electric field applied to the bottom of the trenches 60a positioned on the ends, and thus dielectric breakdown becomes less likely to occur.
In order to increase the magnetic flux density that passes through a magnetic core and to optimize arrangement of a probe coil in a manner corresponding to the structure of the magnetic core, this current sensor 10 is provided with: multiple magnetic core members 22, 23 which are stacked in a state in which plate-shape long leg parts 22b, 23b overlap with each other in the thickness direction in a position along one long edge of the current sensor, and, in a position along the other long edge thereof, plate-shape upper short legs 22c, 23c and lower short legs 22d, 23d are placed abutting each other with a gap therebetween; a probe coil unit 50 which is arranged on the magnetic circuit, in a position along the other long edge; secondary windings 60a, 70a which generate a magnetic field in the magnetic circuit in the direction opposite of the magnetic field generated by the current being detected; a detection circuit which, on the basis of a secondary current necessary for eliminating the output current of the probe coil, outputs a detection signal corresponding to the detected current; and a primary conductor 30 which, passing through the inside of the magnetic circuit, forms a conducting path extending around the outside of the probe coil.
G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p. ex. des transformateurs
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
H01F 3/02 - Noyaux, culasses ou induits en feuilles
2323233-based single crystal and having a plurality of trenches opened on one surface thereof; gate electrodes 12 respectively embedded in the plurality of trenches 16; a source electrode 14 connected to mesa-shaped regions between adjacent trenches of the n-type semiconductor layer 11; and a drain electrode 15 connected to the reverse side of the n-type semiconductor layer 11 from the source electrode 14 with an n-type semiconductor substrate 10 therebetween.
H01L 21/337 - Transistors à effet de champ à jonction PN
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/338 - Transistors à effet de champ à grille Schottky
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
H01L 27/04 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 29/12 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 29/41 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/808 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à jonction PN
H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky
The purpose of the present invention is to provide: a lead-free solder alloy with which progression of cracking in solder joints can be suppressed even in a rugged environment with severe differences between hot and cold and with a vibration load and, even when soldering is performed using electronic components that do not have Ni/Pd/Au plating, progression of cracking in the vicinity of solder joints with electronic components can be suppressed; an electronic circuit board having solder joints formed using the lead-free solder alloy; and an electronic control device. To achieve this purpose, this led-free solder alloy is characterized by including 1 – 4% by weight Ag, 1% by weight or less Cu, 3 – 5% by weight Sb, and 0.01 – 0.25% by weight Ni, with the remaining portion being Sn.
23233 single crystal; and a p-type semiconductor layer 22 that is composed of a p-type semiconductor wherein the volume of amorphous portions is higher than the volume of crystalline portions. With respect to this diode 2, the n-type semiconductor layer 21 and the p-type semiconductor layer 22 form a pn junction.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
23233 single crystal; an anode electrode 11 that forms a Schottky junction with the semiconductor layer 10 and has a portion which is in contact with the semiconductor layer 10, while being formed from Mo or W; and a cathode electrode 12. This Schottky barrier diode 1 has a turn-on voltage of from 0.3 V to 0.5 V (inclusive).
H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
Provided are: a wavelength conversion member which is provided with a wavelength conversion layer wherein a phosphor is sealed in a glass material, and which has excellent optical characteristics and excellent light extraction efficiency regardless of the concentration of the phosphor in the wavelength conversion layer; and a method for producing this wavelength conversion member. Provided as one embodiment of the present invention is a wavelength conversion member 1 which is provided with: a first wavelength conversion layer 10 which comprises a plate-like glass 10a and a phosphor 10b that is contained in the glass 10a; a glass layer 11 which is formed on one surface of the first wavelength conversion layer 10; and a reflective layer 12 which is formed on a surface of the glass layer 11, said surface being on the reverse side of the first wavelength conversion layer 10-side surface.
C03C 3/14 - Compositions pour la fabrication du verre contenant un oxyde mais pas de silice contenant du bore
C03C 4/12 - Compositions pour verres ayant des propriétés particulières pour verre luminescentCompositions pour verres ayant des propriétés particulières pour verre fluorescent
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japon)
TAMURA CORPORATION (Japon)
NOVEL CRYSTAL TECHNOLOGY, INC. (Japon)
Inventeur(s)
Higashiwaki, Masataka
Nakata, Yoshiaki
Kamimura, Takafumi
Wong, Man Hoi
Sasaki, Kohei
Wakimoto, Daiki
Abrégé
As an embodiment, provided is a Ga2O3-based semiconductor device 1a that has: a second Ga2O3-based crystal layer 11 containing a donor; and an N-doped region formed in the entire second Ga2O3-based crystal layer 11.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
C30B 23/08 - Croissance d'une couche épitaxiale par condensation de vapeurs ionisées
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 21/338 - Transistors à effet de champ à grille Schottky
H01L 29/12 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
The purpose of the present invention is to provide a lead-free solder alloy, solder paste, and electronic circuit board that ensure reliable connections between solder joints and electronic components by suppressing thermomigration, which readily occurs within solder joints as the results of added Sb, in environments of extreme temperature differences (especially from –40°C to 150°C or higher), that manifest long-term solder joint durability by also being capable of exerting crack-suppressing effects, and are also capable of manifesting good insulation properties. In order to achieve the abovementioned purpose, the lead-free solder alloy according to the present invention is characterized by containing 1% by mass to 4% by mass Ag, 0.1% by mass to 1% by mass Cu, 1.5% by mass to 5% by mass Sb, and 1% by mass to 6% by mass In, the remainder comprising Sn.
Provided is a Schottky barrier diode which is configured from a Ga2O3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga2O3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.
H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japon)
NOVEL CRYSTAL TECHNOLOGY, INC. (Japon)
Inventeur(s)
Sasaki, Kohei
Higashiwaki, Masataka
Abrégé
One embodiment of the present invention provides a trench MOS Schottky diode 1 which is provided with: a first semiconductor layer 10 which is formed from a Ga2O3 single crystal; a second semiconductor layer 11 which is laminated on the first semiconductor layer 10 and has a trench 12 that opens to a surface 17, while being formed from a Ga2O3 single crystal; an anode electrode 13 which is formed on the surface 17; a cathode electrode 14 which is formed on a surface of the first semiconductor layer 10, said surface being on the reverse side of the second semiconductor layer 11-side surface; an insulating film 15 which covers the inner surface of the trench 12 of the second semiconductor layer 11; and a trench MOS gate 16 which is buried within the trench 12 of the second semiconductor layer 11 so as to be covered by the insulating film 15, while being in contact with the anode electrode 13. The second semiconductor layer 11 is configured from: a lower layer 11b which is on the first semiconductor layer side; and an upper layer 11a which is on the anode electrode 13 side, while having a higher donor concentration than the lower layer 11b.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
METHOD FOR PRODUCING REACTOR, METHOD FOR PRODUCING CORE, CORE, REACTOR, SOFT MAGNETIC COMPOSITE MATERIAL, MAGNETIC CORE USING SOFT MAGNETIC COMPOSITE MATERIAL, AND REACTOR USING SOFT MAGNETIC COMPOSITE MATERIAL
Provided are: a method for producing a reactor, which is capable of improving the productivity and the density, while achieving an advantage in terms of moldability; a method for producing a core; a core; and a reactor. This method for producing a reactor, which is provided with a core that contains a magnetic powder and a resin and a coil that is fitted to the core, comprises: a mixing step wherein 3-5 wt% of a resin is mixed into a magnetic powder; a molding step wherein a mixture obtained in the mixing step and a coil are put into a specific container and are subsequently molded therein; a pressurizing step wherein the mixture is pressurized during the molding step; and a curing step wherein a molded body obtained in the molding step is cured.
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
H01F 1/26 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux métaux ou alliages sous forme de particules, p. ex. de poudre comprimées, frittées ou agglomérées les particules étant isolées au moyen de substances organiques macromoléculaires
H01F 27/255 - Noyaux magnétiques fabriqués à partir de particules
H01F 37/00 - Inductances fixes non couvertes par le groupe
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
Provided are a flux applying device and a flux applying method with which flux is applied to one surface of a workpiece and is prevented from moving around to another surface and becoming attached thereto. This flux applying device is provided with: a flux spraying unit which sprays flux onto one surface of a workpiece which is being conveyed; a first blowing out unit which blows out air toward the other surface of the workpiece from the rear with respect to the workpiece conveying direction; and a second blowing out unit which blows out air toward said other surface of the workpiece from the front with respect to the workpiece conveying direction.
The purpose of the invention is to provide a flux composition and a solder paste composition with which it is possible to suppress the stickiness of flux residue after soldering while suppressing the creation of voids during reflow soldering. To achieve this purpose, this flux composition is a flux composition that constitutes a solder paste composition by being mixed with a solder alloy powder, the flux composition comprising (A) a base resin, (B) an activator, (C) a thixotropic agent, and (D) a solvent, and being characterized in that: the solvent (D) includes (D-1) an organic acid ester that neither includes a carboxyl group nor a hydroxyl group; the temperature at which the weight reduction rate (measured by employing the TG method) of the organic acid ester (D-1) becomes 100 mass% is at least 180°C and at most 50°C above the melting peak temperature of the solder alloy constituting the solder alloy powder; and the amount of the organic acid ester (D-1) blended is from 10 mass% to 100 mass% with respect to the total amount of the solvent (D).
The purpose of the invention is to provide a flux composition and a solder paste composition capable of ensuring excellent printability regardless of the thickness and opening diameter of a metal mask without impairing solderability (the suppression of creation of voids and solder balls), and also capable of achieving the reliability of flux residue (the adhesiveness and insulation resistance of the residue). To achieve this purpose, this flux composition comprises (A) a base resin, (B) an activator, and (C) a paraffin wax, the flux composition being characterized in that: the paraffin wax (C) includes from 9 mass% to 20 mass% of isoparaffin and/or cycloparaffin; and the amount of the paraffin wax (C) blended is from 0.5 mass% to 20 mass% with respect to the total amount of the flux composition.
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japon)
Inventeur(s)
Sasaki, Kohei
Higashiwaki, Masataka
Abrégé
[Problem] To provide a trench MOS-type Schottky diode having a high withstand voltage and low loss. [Solution] According to one embodiment of the present invention, a trench MOS-type Schottky diode 1 is provided, said trench MOS-type Schottky diode having: a first semiconductor layer 10 formed of a Ga2O3 single crystal; a second semiconductor layer 11, which is a layer laminated on the first semiconductor layer 10, and which has a trench 12 opened in a surface 17, said second semiconductor layer being formed of a Ga2O3 single crystal; an anode electrode 13 formed on the surface 17; a cathode electrode 14 formed on the first semiconductor layer 10 surface on the reverse side of the second semiconductor layer 11; and an insulating film 15 covering the inner surface of the trench 12 of the second semiconductor layer 11; and a trench MOS gate 16, which is embedded in the trench 12 of the second semiconductor layer 11 such that the trench MOS gate is covered with the insulating film 15, and which is in contact with the anode electrode 13.
The objective of the present invention is to facilitate maintenance work by translating an upper furnace body and a hood in an upward direction to form openings on both sides in a conveying direction. This conveying and heating device is provided with: a conveying device which conveys an object to be heated; an upper furnace body which is provided above the conveying device and which heats the object to be heated; a hood forming part of a housing which accommodates the upper furnace body and the conveying device; a plurality of raising and lowering mechanisms which translate the upper furnace body and the hood in a vertical direction; and a rotational transmission mechanism unit provided between a single driving means and the plurality of raising and lowering mechanisms.
The present invention makes it possible to accurately inspect an object using an imaging signal. Provided is an imaging device having an imaging element, an imaging lens, and a blowing port for forming an air flow that traverses the front surface of the imaging lens. Also provided is an inspection device that has an imaging device having an imaging element, an imaging lens, and a blowing port for forming an air flow that traverses the front surface of the imaging lens and that uses an imaging signal from the imaging device to inspect an object.
The purpose of the present invention is to provide the following: a lead-free solder alloy which can suppress development of cracks in soldered junctions even in harsh environments in which large temperature differences occur and the vibration is placed on load, for example, and which can suppress development of cracks close to interfaces even when using electronic components in which Ni/Pd/Au plating or the like is not carried out; a solder paste composition which can suppress the occurrence of voids in soldered junctions even if a solder alloy powder containing highly oxidizing alloy elements is used, which can further suppress development of cracks in soldered junctions, which can restrain the occurrence of solder balls and which can exhibit good printability; and a soldered junction and an electronic circuit board and electronic control device having same. In order to achieve this purpose, this lead-free solder alloy is characterized by containing 2-3.1 mass% of Ag, 1 mass% or less of Cu, 1-5 mass% of Sb, 3.1-4.5 mass% of Bi and 0.01-0.25 mass% of Ni, with the remainder comprising Sn.
[Problem] To provide a nitride semiconductor template having a nitride semiconductor layer that exhibits superior crystal quality and effectively suppresses the occurrence of surface cracking, as well as provide a method for manufacturing the same, and an ultraviolet LED including said nitride semiconductor template. [Solution] Provided, as one embodiment, is a nitride semiconductor template 1 having: a substrate 10 having Ga2O3 as a main constituent; a buffer layer 11 formed on the substrate 10 and having AlN as a main constituent; an interface resistance reduction layer 12 formed on the buffer layer 11 and having AlxGa1-xN (where, 0.1≤x≤0.4) as a main constituent; a stress mitigating layer 13 formed on the interface resistance reduction layer 11 and having AlyGa1-yN (where, 0.5
H01L 33/12 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure de relaxation des contraintes, p.ex. couche tampon
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
99.
FLUORESCENT BODY AND PRODUCTION METHOD THEREFOR, FLUORESCENT BODY-CONTAINING MEMBER, AND LIGHT EMITTING DEVICE OR PROJECTOR
[Problem] To provide: a particulate fluorescent body formed of a YAG-based or LuAG-based monocrystal which has excellent external quantum efficiency and excellent light emitting properties under high temperature conditions and a production method therefor; a fluorescent body-containing member that contains the fluorescent body; and a light emitting device or projector having the fluorescent body-containing member. [Solution] Provided as one embodiment of the present invention is a particulate fluorescent body that has a particle diameter (D50) not less than 20 µm and that is formed of a monocrystal having a compositional makeup represented by a compositional formula (Y1-x-y-zLuxGdyCez)3+aAl5-aO12 (0≤x≤0.9994, 0≤y≤0.0669, 0.001≤z≤0.004, -0.016≤a≤0.315).
C09K 11/80 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'aluminium ou du gallium
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
G03B 21/00 - Projecteurs ou visionneuses du type par projectionLeurs accessoires
G03B 21/14 - Projecteurs ou visionneuses du type par projectionLeurs accessoires Détails
Provided is a light emitting device with high luminance, which emits white light by means of a combination of a laser diode and a phosphor. Provided is a light emitting device 1 which comprises: a laser diode that emits blue light and is contained in a laser light emitting device 10; and a wavelength conversion part 11 that absorbs some of the light emitted by the laser diode and converts the wavelength thereof. The wavelength conversion part 11 contains a YAG single crystal phosphor; and the irradiance of the light emitted from the laser diode and irradiated on the wavelength conversion part 11 is 80 W/mm2 or more.
H01S 5/02 - Détails ou composants structurels non essentiels au fonctionnement laser
C09K 11/80 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant de l'aluminium ou du gallium
C30B 29/28 - Oxydes complexes de formule A3Me5O12, dans laquelle A est un métal des terres rares et Me est Fe, Ga, Sc, Cr, Co ou Al, p. ex. grenats
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
F21S 8/10 - spécialement adaptés pour des véhicules
F21V 8/00 - Utilisation de guides de lumière, p. ex. dispositifs à fibres optiques, dans les dispositifs ou systèmes d'éclairage
F21V 9/16 - Emploi de matériaux luminescents spécifiés comme écrans de lumière
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
F21W 101/10 - Phares, phares à longue portée ou phares anti-brouillard
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