The present invention detects, with high sensitivity, a defect in an edge region of a wafer. A defect detection device (50) comprises: a data input interface (51) that acquires parameters used for detecting a defect; an image input interface (52) that acquires a captured image of a wafer; and a control unit (53) that analyzes the captured image on the basis of the parameters and detects a defect in the wafer. The parameters include a protrusion-shaped defect detection threshold and a defect determination level. The control unit (53) extracts, as an ROI image from the captured image, a rectangular region including an edge ring image that shows the edge of the wafer, generates a binarized image on the basis of the protrusion-shaped defect detection threshold by subjecting the ROI image to binarization in which high luminance values are treated as a first value and low luminance values are treated as a second value, acquires, as inner circumference coordinates, the image coordinates of the inner circumference of a region that is displayed using the first value in the binarized image, calculates, as a coordinate differential value, the change level of unevenness in the circumferential direction of the inner circumference coordinates, and detects a defect by comparing the coordinate differential value to the defect determination level.
In the method for cleaning a silicon wafer according to the present invention, the position to which an oxidizing agent solution is supplied in a surface layer modification step and the position to which an etching liquid is supplied in an etching step in a plan view are each separated from the rotation center in the radial direction, and the position to which the oxidizing agent solution is supplied and the position to which the etching liquid is supplied in a plan view are opposed to each other across the rotation center. The method for producing a silicon wafer according to the present invention includes performing the above-described cleaning method. The silicon wafer of the present invention has a diameter of 300 mm, and the difference between the maximum haze value and the minimum haze value in the wafer plane is 0.02 ppm or less.
Provided is an appearance inspection device for inspecting the appearance of a hollow cylindrical or solid cylindrical object, the appearance inspection device comprising: a rotation mechanism for rotating the object under inspection in the circumferential direction of the object under inspection; a sensor for irradiating the surface of the object under inspection rotating in the circumferential direction with laser light and receiving reflected light resulting from the laser light reflected on the surface of the object under inspection; an image processing unit for generating a height image of the surface on the basis of the light reception state of the reflected light; and a determination unit for determining the texture of the surface on the basis of the height image.
G01N 21/952 - Inspection de la surface extérieure de corps cylindriques ou de fils
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
Proposed is a semiconductor wafer cleaning method by which adhesive particles on the surface of a semiconductor wafer can be reduced. A semiconductor wafer cleaning method according to the present invention comprises: a first cleaning step for cleaning a semiconductor wafer while rotating the semiconductor wafer; a first drying step for drying the semiconductor wafer after the first cleaning step; a second cleaning step for cleaning the semiconductor wafer after the first drying step; and a second drying step for drying the semiconductor wafer after the second cleaning step. The second cleaning step includes, in the following order, a pure water supply step for supplying pure water to the surface of the semiconductor wafer that has been subjected to the first drying step, a second initial ozone cleaning step for supplying an ozone liquid to the surface of the semiconductor wafer and cleaning the surface, and a step for alternately cleaning the surface of the semiconductor wafer through second hydrofluoric acid cleaning of cleaning with a hydrofluoric acid aqueous solution and second ozone cleaning of cleaning with an ozone liquid following the second hydrofluoric acid cleaning.
This silicon single crystal manufacturing method comprises, using a silicon single crystal manufacturing apparatus comprising a cylindrical heater surrounding a crucible, and first to fourth support electrodes supporting the heater, the heater comprising first to fourth heat generation parts, the first support electrode connecting the first and second heat generation parts to the positive electrode of a power supply, the second support electrode connecting the second and third heat generation parts to the negative electrode of the power supply, the third support electrode connecting the third and fourth heat generation parts to the positive electrode, the fourth support electrode connecting the fourth and first heat generation parts to the negative electrode, and at least one support electrode out of the first to fourth support electrodes being composed of a thin support electrode at least a part of which having a thickness smaller than that of the remaining support electrodes: heating the crucible, while being rotated, in a state in which the heat generation distribution of the heater is non-uniform to generate a silicon melt; and starting application of a horizontal magnetic field to the silicon melt to grow a silicon single crystal.
This silicon single crystal production method involving pulling up a silicon single crystal while applying a horizontal magnetic field to a silicon melt uses a silicon single crystal production apparatus that includes a crucible and a cylindrical heater surrounding the crucible, wherein the heater includes semicylindrical first and second heat generation units which have the same heat generation characteristics, the apparatus being disposed such that when the amounts of heat generated by the first and second heat generation units differ from each other, the amounts of heat applied to first and second portions of the crucible differ from each other, the first and second portions of the crucible being positioned on either side of a vertical imaginary plane including the central axis of the crucible and the central magnetic field line of the horizontal magnetic field. The silicon single crystal production method involves: a first heating production step which is carried out with the first and second heat generation units generating identical amounts of heat; and a second heating production step carried out with the first and second heat generation units generating different amounts of heat to each other.
[Problem] To provide: an epitaxial silicon wafer having a small in-plane variation in resistivity and a small amount of warpage; and a manufacturing method therefor. [Solution] This epitaxial silicon wafer 1 having a diameter of 300 mm and a thickness of 761-795 μm comprises: a boron-doped bulk silicon substrate 2 having a resistivity of 8-20 mΩ∙cm; an epitaxial silicon film 3 formed on a front surface 2a of the bulk silicon substrate 2; and a rear-surface oxide film 4 formed on a rear surface 2b of the bulk silicon substrate 2. The epitaxial silicon film 3 has a thickness of 1.7-2.7 μm, is boron-doped, has a resistivity of 8-12 Ω∙cm, and has an in-plane distribution of resistivity of at most 3%. The rear-surface oxide film 4 has a thickness of 50-150 nm.
Provided is a method for determining a semiconductor wafer-cleaning condition that allows the thickness of a thermal oxide film to be well controlled. This method for determining a semiconductor wafer-cleaning condition comprises: a step for determining a cleaning correlation between the thicknesses and surface morphologies of chemical oxide films formed on the respective surfaces of a plurality of semiconductor wafers after cleaning processes and cleaning conditions; a step for determining a heat treatment correlation between increases in thickness of thermal oxide films formed on the respective surfaces of the plurality of semiconductor wafers after heat treatment processes under one or more different heat treatment conditions and the thicknesses and surface morphologies of the chemical oxide films; a step for determining a heat treatment condition for a heat treatment process and determining a target thickness of a thermal oxide film to be formed on the surface of a semiconductor wafer in a heat treatment process under the determined heat treatment condition; and a step for determining a cleaning condition under which the thickness of a thermal oxide film to be formed on the surface of a semiconductor wafer in a heat treatment process under the determined heat treatment condition becomes the target thickness.
Provided is a method for cleaning a semiconductor wafer with which the generation of tadpole-shaped defects can be inhibited. The method for cleaning a semiconductor wafer includes a spin cleaning step in which a cleaning fluid is supplied to at least the front surface of the semiconductor wafer while the semiconductor wafer is being rotated. The method is characterized in that the spin cleaning step includes one or more sets of a combination of an ozonated-water cleaning step, in which the cleaning fluid is ozonated water, and an immediately subsequent hydrofluoric-acid cleaning step, in which the cleaning fluid is hydrofluoric acid, and is characterized by including, prior to the spin cleaning step, a pretreatment step in which an electroconductive liquid selected from the group consisting of hydrofluoric acid, carbonated water, and carbonated ozonated water is supplied only to the back surface of the semiconductor wafer while the semiconductor wafer is being rotated.
x2yy (where y is an integer from 2 to 5); and a second step of forming a silicon epitaxial layer 16 on the modification layer 14. A total dose amount is from 6.00×1013ions/cm2to 1.00×1015ions/cm22yy ions 12B is greater than 1.00×1014ions/cm2and less than or equal to 3.00×1014ions/cm2; and a ratio [Si/C] of a number of Si atoms to a number of C atoms injected is from 0.3 to 1.6.
H01L 21/322 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour modifier leurs propriétés internes, p.ex. pour produire des défectuosités internes
12.
QUARTZ GLASS CRUCIBLE AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL USING SAME
[Problem] To provide a quartz glass crucible that makes it possible to form a thick crystal layer on the outer surface of the crucible at a moderate crystallization rate to increase the strength during crystal pulling. [Solution] The quartz glass crucible 1 comprises: a crucible base 10 comprising a silica glass; and a coating film 13 formed on the outer surface 10o of the crucible base 10, the coating film containing a crystallization-promoting agent. The thickness of the outer surface crystal layer formed on the outer surface 10o of the crucible base 10 ten hours after the start of heat treatment in an Ar atmosphere at a furnace temperature of 1580°C and a furnace pressure of 20 Torr is 0.21 to 0.5 mm, and the crystallization rate is 21 to 50 μm/hr. The crystallization rate of the outer surface 10o 20 hours and more after the start of the heat treatment is 10 μm/hr or less.
Provided is a semiconductor wafer processing device capable of reducing the adhesion of particles to a semiconductor wafer when performing a process on the semiconductor wafer. This device is characterized by comprising: a drive device 21 having a drive unit 22 which generates a driving force for driving a semiconductor wafer W to be processed and a transmission unit 23 which transmits the driving force generated by the drive unit 22 to the semiconductor wafer W; a processing chamber 10 which accommodates the semiconductor wafer W and performs a process on the semiconductor wafer W; a drive device chamber 20 which communicates with the processing chamber 10 through an opening 31 and accommodates at least the drive unit 22 of the drive device 21; and a ventilation device 41 which ventilates the atmosphere of the drive device chamber 20.
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
F24F 7/06 - Ventilation avec réseau de gaines à circulation d'air forcée, p.ex. par un ventilateur
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
14.
SEMICONDUCTOR PRODUCTION APPARATUS, SEMICONDUCTOR PRODUCTION PLANT, AND SEMICONDUCTOR PRODUCTION METHOD
A semiconductor production apparatus equipped with a plurality of processing sections and a larger number of loading/unloading sections comprises a plurality of processing sections (11A , 11B) and a larger number of loading/unloading sections (15X, 15Y, 15Z) in order to shorten production time even when the processing sections to be involved into processing are determined for each production lot, wherein objects (WF) to be processed for which the processing sections to be involved into processing are determined for each production lot are loaded in the production lot units into the loading/unloading sections, and the objects to be processed are transported one by one into the processing sections, processed and then transported to the loading/unloading sections. In this semiconductor production apparatus (1), the production lot of the objects to be processed in each processing section is loaded into each of the loading/unloading sections, the remaining loading/unloading sections are left vacant, processing is started in each processing section, and while the object to be processed is processed in each of the processing sections, a processing section in which the processing will be finished relatively quickly is predicted on the basis of production information of the object to be processed in each of the processing sections, and before the processing in each of the processing sections is finished, the production lot that should be processed in the processing section for which the processing has been predicted to be finished relatively quickly is loaded into the loading/unloading section that is presently vacant.
The one-side polishing apparatus for a workpiece according to the present invention is further provided with a surface displacement measuring unit capable of measuring displacement of an exposed upper surface, which is a part of the upper surface of a polishing pad that is not covered with a polishing head. In the method for one-side polishing of a workpiece according to the present invention, in a polishing step, one side of the workpiece is polished while measuring displacement of an exposed upper surface by means of a surface displacement measuring unit capable of measuring the displacement of the exposed upper surface. The method for manufacturing silicon wafers according to the present invention uses the method for one-side polishing of a workpiece.
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
B24B 37/00 - Machines ou dispositifs de rodage; Accessoires
B24B 37/005 - Moyens de commande pour machines ou dispositifs de rodage
B24B 37/12 - Plateaux de rodage pour travailler les surfaces planes
B24B 53/017 - Dispositifs ou moyens pour dresser, nettoyer ou remettre en état les outils de rodage
B24B 55/06 - Equipement d'enlèvement des poussières sur les machines à meuler ou à polir
16.
PULLING-UP APPARATUS CONTROL METHOD, CONTROL PROGRAM, CONTROL APPARATUS, SINGLY CRYSTAL SILICON INGOT PRODUCTION METHOD, AND SINGLY CRYSTAL SILICON INGOT
A method for controlling a pulling-up apparatus 100 for a singly crystal silicon ingot I comprises: a step for acquiring results data that associates a measurement value of an oxygen concentration in a singly crystal silicon ingot I produced in a pulling-up apparatus 100 with an operation amount of the pulling-up apparatus 100 at the time of the production; a step for generating an estimation model that estimates an oxygen concentration in the singly crystal silicon ingot I produced in the pulling-up apparatus 100 on the basis of the results data; a step for adjusting an operation amount to be input into the estimation model in such a manner that an estimation value for the oxygen concentration in the singly crystal silicon ingot I from the estimation model can become a target concentration; and a step for determining the adjusted operation amount as an operation amount to be employed for the production of the singly crystal silicon ingot I in a next batch of the pulling-up apparatus 100.
In order to have uniform dot holes even in cases where a deep laser mark having a depth of about 100 µm is formed, a silicon wafer with a laser mark according to the present invention has an identification mark (5), which is composed of a plurality of dot holes (4), in the surface of a silicon wafer (1) that has a crystal plane orientation of (100), the surface having a surface roughness of 0.15 to 0.60 nm. With respect to an opening (42) of a dot hole (4) in a wafer surface (11), the ratio of the length (L1) in the <100> direction to the length (L2) in the <110> direction is 1 to 1.10; the length (L1) in the <100> direction of the opening (42) is 80 to 110 µm; the depth (D) of a cross-section of the dot hole (4) is 80 to 110 µm; and a bottom surface (43) of the dot hole (4) is a flat surface of the (100) plane.
A method for cleaning a silicon wafer according to the present invention includes supplying an oxidizing agent from a position offset from the center of a silicon wafer in the radial direction in a surface layer modification step. A method for producing a silicon wafer according to the present invention includes performing the aforementioned method for cleaning a silicon wafer. In a silicon wafer according to the present invention, when a prescribed measurement is performed, the difference between the maximum value and the minimum value of the thickness of a natural oxide film in the radial direction of the silicon wafer is 0.1 or less, where the thickness of the measured natural oxide film is normalized using the maximum value.
[Problem] To provide a quartz glass crucible for silicon single-crystal pulling, with which the crystal-layer thickness when the outer surface of the crucible has crystallized is thick, and which can withstand a long-term crystal-pulling process. [Solution] A quartz glass crucible 1 is provided with: a crucible body 10 constituted from silica glass; and a semi-molten layer 13 composed of a fused-on layer of unmolten or semi-molten quartz powder and formed on the outer side of the exterior surface of the crucible body 10. On the surface of the semi-molten layer 13, numerous indentations 14 having a diameter of 0.2-5.0 mm and a depth of 50 μm or more are formed. Some of the indentations 14 are through-holes that penetrate through the semi-molten layer 13 to the exterior surface 10o of the crucible body 10, with the density of the through-holes being between 1 hole/cm2and 50 holes/cm2.
Provided is a method for modeling a wafer shape by means of a function. The function calculates a displacement z of a wafer in the thickness direction thereof, and is the sum of a plurality of functions including: a first function g(r) that is a polynomial of one or more orders and has a distance r from the center of the wafer as a variable; a second function Ar×h(Nθ) in which a sine function or a cosine function h(Nθ) having a first angle θ with reference to a predetermined position in the circumferential direction of the wafer as a variable and an integer N as a constant is multiplied by a coefficient A and the distance r; and a third function Br×i(M(θ-φ)) in which a sine function or a cosine function i(M(θ-φ)) having the first angle θ as a variable and a second angle φ with reference to the predetermined position and an integer M as constants is multiplied by a coefficient B and the distance r.
[Problem] To provide a method for producing a quartz glass crucible, whereby it becomes possible to reduce the content of air bubbles in a transparent layer located on the inside of a crucible without performing a special pretreatment or strong heating of a raw material quartz powder. [Solution] The method for producing a quartz glass crucible according to the present invention comprises a step for depositing a quartz powder on an inner surface 14i of a rotating mold 14 and a step for heating a deposited layer 16 of the quartz powder from the inside of the mold 14 to melt the quartz powder, in which the heat conductivity of the quartz powder that has been tap-filled in a container is 0.4 W/(m•K) to 1.0 W/(m•K) inclusive at 1300°C.
A device for measuring the thickness of a workpiece according to the present invention comprises: a housing; a measurement unit that is disposed in the housing and that measures the thickness of the workpiece; and a flow straightener that is disposed in the housing and that straightens an air flow in the housing. The measurement unit is provided with a spectral interference sensor. A workpiece polishing system according to the present invention is configured such that the device for measuring the thickness of the workpiece is installed in each of a workpiece carry-in part and a workpiece carry-out part. A method for measuring the thickness of a workpiece according to the present invention involves measuring the thickness of the workpiece by using a measurement unit provided with a spectral interference sensor. The measurement unit is disposed in a housing. The thickness of the workpiece is measured by the measurement unit while straightening an air flow in the housing by using a flow straightener disposed in the housing.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
23.
QUARTZ GLASS CRUCIBLE FOR SINGLE-CRYSTAL SILICON PULLING AND METHOD FOR PRODUCING SINGLE-CRYSTAL SILICON USING SAME
[Problem] To provide a quartz glass crucible for single-crystal silicon pulling that is capable of forming a thin, uniform crystal layer on the inner surface by heating during the crystal pulling step. [Solution] The quartz glass crucible 1 comprises: a crucible base 10 comprising a silica glass; and a coating film 13 formed on an inner surface 10i of the crucible base 10, the coating film containing a crystallization-promoting agent. The concentration of Fe contained in a first depth region of at least 0.5 mm or less from the inner surface 10i of the crucible base 10 is higher than the concentration of Al contained in the first depth region.
Provided is a cylindrical grinding device that produces a slicing single crystal by performing cylindrical grinding in which the outer peripheral surface of a grinding single crystal is ground while the grinding single crystal is caused to spin around a spinning axis. The cylindrical grinding device comprises: a posture correction unit that, on the basis of a plane orientation difference between the plane orientation of the grinding single crystal and a target plane orientation of a wafer obtained by slicing the slicing single crystal, performs a spinning process in which the grinding single crystal is caused to spin around the central axis thereof, and a rotation process in which the grinding single crystal is rotated around a rotation axis orthogonal to the central axis, to thereby correct the posture of the grinding single crystal so that the central axis is inclined with respect to the spinning axis; and a grinding unit that performs cylindrical grinding on the outer peripheral surface of the grinding single crystal with the corrected posture while the grinding single crystal is caused to spin around the spinning axis.
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
B24B 5/50 - Machines ou dispositifs pour meuler des surfaces de révolution des pièces, y compris ceux qui meulent également des surfaces planes adjacentes; Accessoires à cet effet caractérisés par le fait qu'ils sont spécialement étudiés en fonction des propriétés de la matière des objets non métalliques à meuler, p.ex. des cordes d'instruments de musique
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p.ex. des matériaux pour semi-conducteurs; Appareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p.ex. par des outils animés d'un mouvement alternatif
25.
SEMICONDUCTOR WAFER EVALUATION METHOD AND SEMICONDUCTOR WAFER PRODUCTION METHOD
Provided is a semiconductor wafer evaluation method that includes implementing multiple rounds of surface treatment in which hydrofluoric acid and ozone water are supplied to the surface of a semiconductor wafer, and carrying out a surface inspection in which the surface of the semiconductor wafer is inspected by a surface defect inspection device before surface treatment is performed, after each round of surface treatment, and after the multiple rounds of surface treatment are all completed. An LPD that is initially detected in surface inspection after an nth round of surface treatment (where n is an integer ranging from 1 to N−1, and N is the total number of rounds of surface treatment) at coordinates where no LPD was detected in the surface inspection carried out before the surface treatment is performed is classified as a processing-caused defect. The expected size of the processing-caused defect present on the surface of the wafer before the surface treatment is implemented at the coordinates where the processing-caused defect is detected is calculated according to regression analysis in which the detected size of the LPD detected in the surface inspection after the multiple rounds of surface treatment are all completed is used as a target variable, and in which the total number of rounds (N−n) of surface treatment implemented after the initial detection is used as an explanatory variable.
This management device 20 comprises a control unit 22 that manages a plurality of wafer processing devices 1. The control unit 22 selects a wafer processing device 1 to be assigned to processing of a prescribed type of wafer from among the plurality of wafer processing devices 1, on the basis of the distance between post-processing characteristics of wafers processed by each wafer processing device 1 and the center value of a standard of the prescribed type of wafer .
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
B24B 1/00 - Procédés de meulage ou de polissage; Utilisation d'équipements auxiliaires en relation avec ces procédés
B24B 37/013 - Dispositifs ou moyens pour détecter la fin de l'opération de rodage
B24B 37/08 - Machines ou dispositifs de rodage; Accessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage double face
G05B 19/418 - Commande totale d'usine, c.à d. commande centralisée de plusieurs machines, p.ex. commande numérique directe ou distribuée (DNC), systèmes d'ateliers flexibles (FMS), systèmes de fabrication intégrés (IMS), productique (CIM)
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
27.
METHOD FOR DRESSING POLISHING PAD, METHOD FOR POLISHING SILICON WAFER, METHOD FOR PRODUCING SILICON WAFER, AND DEVICE FOR POLISHING SILICON WAFER
A method for dressing a polishing pad is proposed by which the polishing pad can be more evenly dressed even on a rotating platen having a curved surface. The method for dressing a polishing pad 100 comprises pressing the grindstone 12 of a pad dresser 1 having a grindstone 12 attached thereto against the polishing pad 100 adhered to a polishing platen and sliding the grindstone 12 thereon, thereby dressing the polishing pad 100. The dressing method is characterized in that the pad dresser 1 has been configured so that the dressing surface 12b of the grindstone 12 which slides on the polishing pad 100 is changeable in the radius of curvature R1 along the radial-direction of the polishing platen.
B24B 53/017 - Dispositifs ou moyens pour dresser, nettoyer ou remettre en état les outils de rodage
B24B 37/07 - Machines ou dispositifs de rodage; Accessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage
B24B 37/12 - Plateaux de rodage pour travailler les surfaces planes
Provided is a method for determining conditions for polishing one surface of a wafer with a polisher. The polisher comprises at least a platen, a polishing pad disposed on the platen, and a polishing chuck disposed over the polishing pad. The method for determining polishing conditions comprises: setting a target range of in-plane differences in wafer-polishing amount; determining a prediction range of in-plane differences in wafer-polishing pressure which is expected to attain an in-plane difference in wafer-polishing amount within the target range, on the basis of a correlation between the in-plane difference in wafer-polishing amount and the in-plane difference in wafer-polishing pressure; and determining a range of pressing-surface shape values of the polishing chuck which is expected to attain an in-plane difference in wafer-polishing pressure within the prediction range, on the basis of a correlation between the in-plane difference in wafer-polishing pressure and the pressing-surface shape value of the polishing chuck.
B24B 37/005 - Moyens de commande pour machines ou dispositifs de rodage
B24B 37/10 - Machines ou dispositifs de rodage; Accessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage simple face
B24B 37/24 - Tampons de rodage pour travailler les surfaces planes caractérisés par la composition ou les propriétés des matériaux du tampon
B24B 37/30 - Supports de pièce pour rodage simple face de surfaces planes
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
[Problem] To provide a silicon wafer that can generate, at high density in a bulk section thereof, thermally stable oxygen precipitate nuclei that are not influenced by a customer's thermal treatment, while minimizing oxygen precipitate on a surface layer section of the silicon wafer. [Solution] A silicon wafer 50: has an oxygen precipitate (BMD) density of 1x107to 1x108cm-3, in a surface layer section 53, from a surface 50a to a depth of 30 μm, the density occurring as a result of a first evaluation heat treatment in which, after a heat treatment at 780°C for 3 hours, a visualization heat treatment is carried out at 950 to 1000°C for 16 hours; and a BMD density of 1x109to 7x109cm-312211 is 0.74 to 1.02.
H01L 21/322 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour modifier leurs propriétés internes, p.ex. pour produire des défectuosités internes
A method for assessing a wafer 30 includes: a step for acquiring, as assessment images for assessing pass/fail of the wafer 30, captured images 40 obtained by imaging at least a portion of the wafer 30; a step for excluding a captured image 40 from the assessment images if said captured image 40 corresponds to an erroneous assessment candidate image; and a step for assessing pass/fail of the wafer 30 on the basis of the assessment image.
Provided is a method for growing single-crystal silicon in which a single-crystal pulling device comprising a chamber, a crucible for containing a silicon melt, a heating part for heating the silicon melt, a heat barrier disposed above the crucible so as to surround single-crystal silicon to be pulled out of the silicon melt, and an inert-gas feed part which feeds an inert gas passing between the single-crystal silicon and the heat barrier is used to pull up the single-crystal silicon while applying a horizontal magnetic field to the silicon melt. The heat barrier is disposed so that the vertical axis passing through the center of the opening of the heat barrier is offset from the vertical rotation axis of the crucible in a direction different from a direction along the application direction at the center of the horizontal magnetic field.
The present invention provides a single crystal pulling apparatus which comprises: a chamber; a crucible that is arranged within the chamber and retains a silicon melt; a pulling unit that comprises a pulling shaft, to one end of which a seed crystal is mounted, and a pulling drive unit, which rotates and vertically moves the pulling shaft, so as to pull a silicon single crystal; a heat shielding body which is arranged above the crucible so as to surround the silicon single crystal; and a magnetic field application unit which applies a horizontal magnetic field to the silicon melt in the crucible. The lower end of the heat shielding body is provided with a plurality of cuts that are arranged so as to be twofold symmetric about the pulling shaft.
Provided is a packaging unit (10) for packaging accommodation target articles (80A) in a box-shaped container (200), in two rows with a space therebetween in the width direction and in two tiers in the vertical direction. The packaging unit comprises a lower cushioning material (1) which supports the accommodation target articles (80A) in the two rows in the lower tier; intermediate cushioning materials (3) one of which is placed between each accommodation target article of the lower tier and the upper tier; an upper cushioning material (5) which holds upper parts of the accommodation target articles; and a vibration absorbing unit (20) which is provided at the bottom of the container. The vibration absorbing unit (20) has a first plate (21), a second plate (22), and elastic bodies (23) disposed between the first plate (21) and the second plate (22). The center of each elastic body (23) is further outward from the midway point between the accommodation target articles in the two rows than the center of gravity of an accommodation target article. The distance (D) in the width direction between the center of each elastic body (23) and the center of gravity of an accommodation target article is 2-8% of the maximum outer diameter of that elastic body (23).
B65D 81/113 - Réceptacles, éléments d'emballage ou paquets pour contenus présentant des problèmes particuliers de stockage ou de transport ou adaptés pour servir à d'autres fins que l'emballage après avoir été vidés de leur contenu spécialement adaptés pour protéger leur contenu des dommages mécaniques maintenant le contenu en position éloignée des parois de l'emballage ou des autres pièces du contenu utilisant des blocs de matériau amortisseur de chocs de forme spécialement adaptée au contenu
B65D 85/30 - Réceptacles, éléments d'emballage ou paquets spécialement adaptés à des objets ou à des matériaux particuliers pour objets particulièrement sensibles aux dommages par chocs ou compression
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
34.
CARRIER FOR DOUBLE-SIDED POLISHING, AND SILICON WAFER DOUBLE-SIDED POLISHING METHOD AND DEVICE EMPLOYING SAME
[Problem] To provide a carrier for double-sided polishing, with which an increase in service life can be achieved by improving wear resistance, and a silicon wafer double-sided polishing method and device employing the same. [Solution] A carrier 10 for double-sided polishing according to the present invention is a member for holding a silicon wafer when performing double-sided polishing of the silicon wafer, and comprises a substantially disk-shaped carrier body comprising a resin laminated plate containing a fiber substrate, and a wafer holding hole 12 formed in the carrier body 11. A fiber exposure rate of a main surface of the carrier body 11 is less than 50%.
B24B 37/28 - Supports de pièce pour rodage double face de surfaces planes
B24B 37/08 - Machines ou dispositifs de rodage; Accessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage double face
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
35.
METHOD AND APPARATUS FOR PRODUCING SILICON SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON WAFER
[Problem] To provide a method and apparatus for producing a silicon single crystal, the method and apparatus being capable of quantitatively evaluating the presence or absence of deformation or eccentricity of a quartz crucible, or the size of the deformation or eccentricity. [Solution] The present invention provides a method for producing a silicon single crystal by pulling a silicon single crystal from a silicon melt 2 in a quartz crucible 11, wherein images including a mirror image 11M of the quartz crucible 11 reflected on a melt surface 2a of the silicon melt 2 are acquired at predetermined time intervals, and deformation or eccentricity of the quartz crucible 11 is evaluated from temporal changes of the position of the mirror image 11M of the quartz crucible 11 reflected in a plurality of images that are acquired during the time period where the quartz crucible 11 rotates at least once.
C30B 15/10 - Creusets ou récipients pour soutenir le bain fondu
C30B 15/26 - Stabilisation, ou commande de la forme, de la zone fondue au voisinage du cristal tiré; Commande de la section du cristal en utilisant des détecteurs photographiques ou à rayons X
22 of the Ar gas passing through the gap between the lower end of a heat-shielding object disposed over the silicon melt and the surface of the silicon melt is regulated to 0.75-1.1 m/s.
C30B 15/04 - Croissance des monocristaux par tirage hors d'un bain fondu, p.ex. méthode de Czochralski en introduisant dans le matériau fondu le matériau à cristalliser ou les réactifs le formant in situ avec addition d'un matériau de dopage, p.ex. pour une jonction n–p
This conveyor conveys a carrier that is formed in a flat plate shape and is provided with a through-hole, and a substrate that is accommodated inside the through-hole, the conveyor comprising: first holding parts that hold the outer peripheral section of the carrier in the thickness direction of the carrier, and second holding parts that hold the substrate inside the through-hole in the thickness direction, wherein at least one of the first holding parts and the second holding parts can lengthen or shorten in the thickness direction such that the carrier held by the first holding parts and the substrate held by the second holding parts separate from each other.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
38.
TRANSFER DEVICE, POLISHING EQUIPMENT, AND TRANSFER METHOD
This transfer device moves, to a planetary device-type polishing part that has an internal gear and a sun gear that rotate on a support surface of a platen and that polishes the surface of a substrate facing in the thickness direction, a carrier in which are formed a plurality of teeth that are flat, provided on the outer peripheral edge, and are able to mesh with the internal gear and the sun gear, and a through-hole accommodating the substrate, wherein the transfer device comprises a transfer part for transferring the carrier, an image-capturing part for acquiring an image of at least some of the plurality of teeth of the internal gear and at least some of the plurality of teeth of the sun gear, and a control unit for controlling the transfer unit.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
B24B 37/08 - Machines ou dispositifs de rodage; Accessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage double face
B24B 37/28 - Supports de pièce pour rodage double face de surfaces planes
B24B 49/12 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meuler; Agencements de l'appareillage d'indication ou de mesure, p.ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs optiques
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
H01L 21/463 - Traitement mécanique, p.ex. meulage, traitement par ultrasons
39.
CUSHIONING MATERIAL, PACKING BODY, AND PACKING METHOD
Provided is a cushioning material (100) that, when a plurality of storage containers (80) are being packed in a packing case (200) that has a bottom panel (202), lateral panels (203), and a lid (204), is disposed between the plurality of storage containers (80) and the packing case (200). The storage containers (80) are arranged in two rows, each of which contains a plurality of the storage containers (80), and in two tiers vertically. The cushioning material (100) comprises: lower cushioning materials (1) which support the respective bottom parts of the two rows of storage containers (80) on the lower tier; intermediate cushioning materials (3) which are interposed between the storage containers (80) on the upper tier and the storage containers (80) on the lower tier; and upper cushioning materials (5) which are disposed on the respective tops of the rows of storage containers (80) on the upper tier so as to hold the respective tops of the storage containers (80). The lower cushioning materials (1) are each formed so as to leave no gap with respect to the lateral panels of the packing case (200), while the intermediate cushioning materials (3) and the upper cushioning materials (5) are formed so as to leave respective prescribed gaps with respect to the lateral panels (203) of the packing case (200).
B65D 81/113 - Réceptacles, éléments d'emballage ou paquets pour contenus présentant des problèmes particuliers de stockage ou de transport ou adaptés pour servir à d'autres fins que l'emballage après avoir été vidés de leur contenu spécialement adaptés pour protéger leur contenu des dommages mécaniques maintenant le contenu en position éloignée des parois de l'emballage ou des autres pièces du contenu utilisant des blocs de matériau amortisseur de chocs de forme spécialement adaptée au contenu
B65D 85/30 - Réceptacles, éléments d'emballage ou paquets spécialement adaptés à des objets ou à des matériaux particuliers pour objets particulièrement sensibles aux dommages par chocs ou compression
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
40.
EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER MANUFACTURING APPARATUS
Provided is an epitaxial wafer manufacturing method in which, after an epitaxial wafer manufacturing step comprising loading a wafer (W) into a chamber (11) of an epitaxial wafer manufacturing apparatus (1), growing an epitaxial film on the wafer (W) to obtain an epitaxial wafer, and unloading the epitaxial wafer out of the chamber (11) is performed a plurality of times, the interior of the chamber (11) is cleaned, wherein, during the growth of the epitaxial film, the wafer (W) supported on a susceptor (12) is heated by a first heating apparatus (24, 25), with the outer edge of the susceptor (12) being heated by a second heating apparatus (27).
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
This method for cutting a silicon ingot is characterized in that a silicon ingot is cut by running a fixed-abrasive wire at a speed which has a maximum speed of at least 1,200 m/minute while supplying a coolant thereto which has a water content greater than 99%.
B24B 55/02 - Dispositifs de sécurité pour machines de meulage ou de polissage; Accessoires adaptés aux machines à meuler ou à polir pour maintenir les outils ou les parties de machines en bon état de marche Équipement pour refroidir les surfaces abrasives, p.ex. dispositifs d'alimentation en agent de refroidissement
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p.ex. des matériaux pour semi-conducteurs; Appareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p.ex. par des outils animés d'un mouvement alternatif
42.
METHOD FOR CLEANING SEMICONDUCTOR WAFER AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER
The present invention proposes a method for cleaning a semiconductor wafer, the method being capable of cleaning the surface of a semiconductor wafer more uniformly than ever before. The present invention provides a method for cleaning a semiconductor wafer W, wherein the surface of a semiconductor wafer W is cleaned by supplying a chemical agent thereto, while rotating the semiconductor wafer W; and this method for cleaning a semiconductor wafer W is characterized in that before the supply of the chemical agent ((b) and (c) in Fig. 1), pure water is supplied to the central part of the surface of the semiconductor wafer W, while rotating the semiconductor wafer W ((a) in Fig. 1), and a switch is made from the supply of pure water to the supply of the chemical agent in a state where a film of pure water is formed on the surface.
Provided is a magnet for a single crystal production device that can increase the degree of freedom in design of magnetic field distribution even if the positioning of coils that constitute the magnet of a single crystal production device is limited. A magnet 1 for a single crystal production device, the magnet 1 applying a horizontal magnetic field in a single crystal production device that pulls a single crystal while applying the horizontal magnetic field to a melt of single crystal raw materials accommodated in a crucible, characterized by being equipped with: four or more coils 2, the ratio of the height Hi to the width Wi of at least one coil 2 among the four or more coils 2 exceeding 1; and a control unit capable of causing each of the four or more coils 2 to generate a magnetic field in a mutually independent manner.
Provided is a method that is for assessing a semiconductor sample and that comprises: obtaining a decay curve by subjecting a semiconductor sample to be assessed, to measurement with a photoconductive decay method; applying, to the decay curve, a signal data process using a model formula including an exponential decay term and a constant term; and calculating a recombination lifetime of the semiconductor sample from an exponential decay formula obtained by the signal data process.
[Problem] To provide a crucible protective sheet that is unlikely to wear even if used for crystal pulling over a long time, e.g., multiple pulling. [Solution] A crucible protective sheet 21 that: is used in silicon single crystal pulling by the Czochralski (CZ) method whereby a heater that heats a silicon raw material in a single pulling batch is powered for at least 500 hours; is made of carbon; and is laid between a quartz crucible and a support crucible made of carbon. When a measurement tank 30 is prepared that has a 2,000 cc capacity and a vent 31 opening area of 490 mm2, the pressure change inside the measurement tank 30 is no more than 104.9 Pa after 30 minutes has lapsed since opening to the atmosphere, when the vent 31 is connected to one main surface side of the crucible protective sheet 21 and the other main surface side of the crucible protective sheet 21 is opened to the atmosphere in a state in which the measurement tank 30 is depressurized to no more than 200 Pa.
A production method for silicon monocrystal comprising: a resistance value-setting step (S2) for setting a first resistance value that is the resistance value of a first power supply unit and a second resistance value that is the resistance value of a second power supply unit; a silicon melt-heating step (S3) for heating silicon melt in a quartz crucible in the absence of a magnetic field; a horizontal magnetic field-applying step (S4) for applying a horizontal magnetic field to the silicon melt in the quartz crucible; and a pulling-up step (S6) for pulling up silicon monocrystal from the silicon melt. In the resistance value-setting step, the first and second resistance values are measured, and if the resistance ratio of the first and second resistance values is less than a determination value, at least one of the first and second resistance values is adjusted, and the resistance values are measured again and compared with the determination value, and if the resistance ratio is not less than the determination value, the resistance value-setting step is ended.
C30B 15/26 - Stabilisation, ou commande de la forme, de la zone fondue au voisinage du cristal tiré; Commande de la section du cristal en utilisant des détecteurs photographiques ou à rayons X
The present invention provides a method for measuring a contact angle of a silicon wafer, the method being capable of detecting a severe hydrophilicity level difference in a silicon wafer surface, the difference being not able to be detected by a contact angle measurement by means of pure water. A method for measuring a contact angle of a silicon wafer according to the present invention comprises: a step in which a droplet is dropped on the surface of a silicon wafer; and a step in which the contact angle of the surface of the silicon wafer is determined from an image of the droplet. With respect to this method for measuring a contact angle of a silicon wafer, the droplet is formed of an aqueous solution which has a surface tension that is higher than the surface tension of pure water.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
G01N 13/00 - Recherche des effets de surface ou de couche limite, p.ex. pouvoir mouillant; Recherche des effets de diffusion; Analyse des matériaux en déterminant les effets superficiels, limites ou de diffusion
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
50.
SEMICONDUCTOR WAFER CLEANING METHOD, AND SEMICONDUCTOR WAFER MANUFACTURING METHOD
Provided is a semiconductor wafer cleaning method capable of reliably reducing light point defects (LPD) on a wafer surface. A semiconductor wafer cleaning method according to the present invention includes: a first step for measuring a contact angle of a surface of the semiconductor wafer under a plurality of conditions in which quantities of droplets dripped onto the surface are mutually different; a second step for calculating a ratio of a change in the measured value of the contact angle to a change in the quantity of droplets, from a relationship between the quantity of droplets and the measured value of the contact angle under the plurality of conditions; a third step for determining, on the basis of the ratio, whether pre-processing of the surface of the wafer is necessary; a fourth step for performing the pre-processing of the surface of the semiconductor wafer in accordance with the determination in the third step; and, subsequently, a fifth step for performing single-wafer spin cleaning of the surface of the semiconductor wafer.
Provided is a polishing head that has: a first annular member; a blocking member that blocks an upper surface-side opening of an opening in the first annular member; a membrane that blocks a lower surface-side opening of the opening in the first annular member; and a second annular member that has an opening that is positioned below the membrane and holds a workpiece to be polished. A space formed by the opening of the first annular member being blocked by the blocking member and the membrane is partitioned into an inside space and an outside space, where the direction toward the center of the opening in the first annular member is defined as the inside and the opposite direction is defined as the outside, said spaces being partitioned by an annular partitioning wall having an upper annular connection section joined to the blocking member and a lower annular connection section joined to the membrane. The inner diameter of the lower annular connection section of the annular partitioning wall is greater than the inner diameter of the second annular member, and an outer circumferential area for the installation position of the workpiece to be polished is positioned vertically below the upper annular connection section of the annular partitioning wall.
In the present invention, the optimal value for an inter-plate distance is calculated on the basis of relationship data indicating the relationship between the flatness of a workpiece and an inter-plate distance which is the distance between an upper plate and a lower plate at at least two locations each having a different distance from the center of a rotating plate. By controlling the shape of the rotating plate, the inter-plate distance can be controlled so as to achieve the optimal value.
B24B 37/005 - Moyens de commande pour machines ou dispositifs de rodage
B24B 37/08 - Machines ou dispositifs de rodage; Accessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage double face
B24B 49/10 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meuler; Agencements de l'appareillage d'indication ou de mesure, p.ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs électriques
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
53.
DOUBLE-SIDE POLISHING DEVICE FOR WORKPIECE, AND DOUBLE-SIDE POLISHING METHOD
The present invention provides a double-side polishing device for a workpiece that, during double-side polishing, can end the double-side polishing at a timing at which the shape of the entire workpiece and the outer circumferential portion of the workpiece reaches a target shape. A computing unit 13 finds, from data regarding thickness of a workpiece that is measured by a workpiece thickness measuring instrument, a shape component of the workpiece, a position of the shape component of the workpiece in a radial direction on the workpiece, a shape distribution of the workpiece, and a shape index of the entire workpiece, determines a timing, at which the shape index of the entire workpiece of each workpiece obtained reaches a set value for the shape index of the entire workpiece, decided on the basis of a deviation between a target value for the shape index of the entire workpiece in a current batch and a history value of the shape index of the outer circumferential portion of a workpiece in the previous batch, and deviation of the history value of the shape index of the outer circumferential portion of the workpiece in the previous batch from a target range for the shape index of the entire workpiece in the current batch, as the timing to end the double-side polishing, and ends the double-side polishing at this timing.
B24B 37/013 - Dispositifs ou moyens pour détecter la fin de l'opération de rodage
B24B 37/08 - Machines ou dispositifs de rodage; Accessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage double face
B24B 49/04 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meuler; Agencements de l'appareillage d'indication ou de mesure, p.ex. pour indiquer le début de l'opération de meulage comparant la cote instantanée de la pièce travaillée à la cote cherchée, la mesure ou le calibrage étant continus ou intermittents impliquant la mesure de la cote de la pièce sur le lieu du meulage pendant l'opération de meulage
B24B 49/12 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meuler; Agencements de l'appareillage d'indication ou de mesure, p.ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs optiques
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
54.
WAFER APPEARANCE INSPECTION DEVICE AND WAFER APPEARANCE INSPECTION METHOD
A wafer appearance inspection device 10 comprises a control unit 12 that generates a plurality of overall images 40 of a wafer surface, which includes parts images 41-45 captured by dividing the wafer surface into a plurality of regions along a peripheral direction, generates an average image 50 on the basis of the plurality of overall images 40, and detects an abnormality on the wafer surface on the basis of the average image 50.
[Problem] To provide: a quartz glass crucible in which peeling is prevented by a crystallization promoting agent coating film and the in-plane distribution of the crystallization promoting agent concentration can be maintained so as to be substantially uniform; a method for manufacturing the quartz glass crucible; and a method for manufacturing a silicon single crystal. [Solution] A quartz glass crucible 1 according to the present invention comprises: a crucible base 10 composed of a silica glass; and a coating film 13 formed on an inner surface 10i of the crucible base 10, the coating film containing a crystallization promoting agent. The peel strength of the coating film13 is 0.3 kN/m or more.
[Problem] To provide: a quartz glass crucible that is capable of reducing carbon contamination and the pinhole occurrence rate in silicon single crystals; a manufacturing method therefor; and a manufacturing method for silicon single crystals. [Solution] A quartz glass crucible 1 according to the present invention includes: a crucible body 10 consisting of silica glass; and a crystallization-promoter-containing coating film 13 formed on an inner surface 10i of the crucible body 10. The average carbon concentration in an area at a depth of 0 to 300 µm from the coating film 13 and the inner surface 10i of the crucible body 10 is 1.0×1012to 3.0×1019 atoms/cc.
Provided is a silicon single crystal ingot evaluation method comprising: cutting out a plurality of (three or more) silicon wafers from a silicon single crystal ingot to be evaluated; processing the plurality of silicon wafers into silicon mirror surface wafers by subjecting the silicon wafers to mirror surface processing; processing the plurality of silicon mirror surface wafers into silicon epitaxial wafers by forming an epitaxial layer on the surface that was subjected to mirror surface processing; acquiring a bright spot map for the epitaxial layer surface of each of the plurality of silicon epitaxial wafers by means of a laser surface inspection device; and producing a layered map by layering the bright spot maps obtained for the epitaxial layer surfaces of the plurality of silicon epitaxial wafers. If a bright spot group in which a plurality of (three or more) bright spots are distributed in a line is not confirmed in the layered map, it is presumed that the region from which the plurality of silicon wafers were cut out from the silicon single crystal ingot to be evaluated is not a twin crystal generation region. If the bright spot group distributed in a line is confirmed in the layered map, it is presumed that the region is a twin crystal generation region, said region being the region from which the plurality of silicon wafers were cut out and in which the bright spots included in the bright spot group were confirmed in the silicon single crystal ingot to be evaluated.
Provided is a semiconductor wafer cleaning device that can suppress the generation of particles on the back surface of a semiconductor wafer. A semiconductor wafer cleaning device 1 comprises: a rotating table 11 having an opening 11a in the center; a wafer holding part provided on an upper surface of the rotating table 11 and holding a semiconductor wafer W to be cleaned; a return part 21 provided on a lower surface of the rotating table; a nozzle head 14 having a recess 14a disposed in the center and a horizontal section 14b disposed at a radially outer side of the recess 14a; a lower chemical solution supply nozzle 15 supplying a chemical solution towards the back surface of the semiconductor wafer W; and a wafer back surface rinsing nozzle 16 supplying pure water towards the back surface of the semiconductor wafer W. The return part 21 is disposed near the opening 11a, and a return part rinsing nozzle 22 that supplies pure water towards the return part 21 so as to rinse the return part 21 is provided in the recess of the nozzle head 14.
A method for creating correlational expression for polishing condition determination, the method comprising: polishing a semiconductor wafer on the basis of a plurality of polishing conditions including a plurality of polishing parameters, and acquiring, through actual measurement, in-plane polishing amount distribution information of the semiconductor wafer polished on the basis of the plurality of polishing conditions; polishing a semiconductor wafer on the basis of the polishing conditions including the plurality of polishing parameters, and acquiring, through actual measurement, polishing-time in-plane temperature distribution information of the semiconductor wafer polished on the basis of the plurality of polishing conditions, or creating, through heat transfer analysis, the polishing-time in-plane temperature distribution information of the semiconductor wafer polished on the basis of the polishing conditions including the plurality of polishing parameters; creating a correlational expression 1 between the plurality of polishing parameters and an in-plane temperature distribution parameter for the semiconductor wafer on the basis of the polishing-time in-plane temperature distribution information; creating a correlational expression 2 between the plurality of polishing parameters and an in-plane polishing amount distribution parameter for the semiconductor wafer on the basis of the in-plane polishing amount distribution information; and creating a correlational expression 3 between the plurality of polishing parameters and the in-plane polishing amount distribution parameter for the semiconductor wafer on the basis of the the correlational expression 1 and the correlational expression 2, wherein the correlational expression 3 is to be used for determining polishing conditions for actually polishing the semiconductor wafer.
B24B 37/005 - Moyens de commande pour machines ou dispositifs de rodage
B24B 49/14 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meuler; Agencements de l'appareillage d'indication ou de mesure, p.ex. pour indiquer le début de l'opération de meulage tenant compte de la température pendant le meulage
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
A wafer storage container cleaning apparatus (1) is provided with: a cleaning vessel (31) which can accommodate a housing fixture (3) in which a wafer storage container (2) having a container main body (11) and a lid body (12) is housed; a liquid supply nozzle (32A to 32H) for supplying a cleaning solution or the like into the cleaning vessel (31); and a liquid discharge nozzle (34) for discharging a waste solution to the outside of the cleaning vessel (31). The container main body (11) has a rear wall (11A) opposed to a container opening (11B). The liquid supply nozzle (32A to 32H) is arranged in such a manner that each liquid supply opening (32AA to 32HA) for ejecting the cleaning solution or the like therethrough can face the inside of the rear wall (11A) in such a housed state that the container main body (11) is installed in the housing fixture (3) and is housed in the cleaning vessel (31) while the container opening (11B) faces downward, and the liquid discharge nozzle (34) is arranged in such a manner that a discharge opening (34A) through which the waste solution is sucked can face the center of the inside of the rear wall (11A) in the above-mentioned housed state.
A processing condition setting device 20 is provided with a control unit 22 for selecting a parameter set to be applied to a wafer processing device 1 from among a plurality of parameter sets. On the basis of a pre-processing characteristic of a wafer to be processed and processing data, the control unit 22 estimates, for each parameter set, a post-processing characteristic assuming that the parameter set has been applied and the wafer to be processed has been processed. The control unit 22 calculates at least two types of index for each post-processing characteristic, and acquires a constraining condition relating to the indexes. The control unit 22 selects the parameter set to be applied to the wafer processing device 1 when the wafer to be processed is processed from among matching parameter sets for which the indexes satisfy the constraining condition, among the parameter sets.
B24B 37/005 - Moyens de commande pour machines ou dispositifs de rodage
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
B23Q 15/00 - Commande automatique ou régulation du mouvement d'avance, de la vitesse de coupe ou de la position tant de l'outil que de la pièce
62.
HEATING PART OF SILICON SINGLE CRYSTAL MANUFACTURING DEVICE, CONVECTION PATTERN CONTROL METHOD FOR SILICON MELT, SILICON SINGLE CRYSTAL MANUFACTURING METHOD, SILICON WAFER MANUFACTURING METHOD, SILICON SINGLE CRYSTAL MANUFACTURING DEVICE, AND CONVECTION PATTERN CONTROL SYSTEM FOR SILICON MELT
A heating part (1) heats a silicon melt (M) within a quartz crucible (4B). This heating part (1) has a heat-procuding part (11) that is integrally molded in a cylindrical shape, and four power supply parts (12A-12D) that supply power to the heat-producing part (11). When the heating part (1) is divided in half by a virtual surface (VS) that is along the center axis (CA) of the heat-producing part (11), is perpendicular to the heat-producing part (11), and is parallel to a magnetic force line at the center of a horizontal magnetic field applied to the silicon melt (M), the heat production quantity of a first heating region (1A) that is located on one side of the virtual surface (VS) and the heat production quantity of a second heating region (1B) that is located on the other side of the virtual surface (VS) are configured as different values.
C30B 15/14 - Chauffage du bain fondu ou du matériau cristallisé
C30B 30/04 - Production de monocristaux ou de matériaux polycristallins homogènes de structure déterminée, caractérisée par l'action de champs électriques ou magnétiques, de l'énergie ondulatoire ou d'autres conditions physiques spécifiques en utilisant des champs magnétiques
63.
HEAT TREATMENT BOAT FOR VERTICAL HEAT TREATMENT FURNACE AND HEAT TREATMENT METHOD FOR SEMICONDUCTOR WAFER
Provided are a heat treatment boat for a vertical heat treatment furnace and a heat treatment method for a semiconductor wafer that, during heat treatment of a semiconductor wafer, can suppress occurrence of slip displacement in a semiconductor wafer more than was conventionally possible. This heat treatment boat for a vertical heat treatment furnace comprises a plurality of columns and one or more support sections that are connected to the plurality of columns and support a rear surface of a semiconductor wafer, wherein the heat treatment boat is characterized in that when a region that includes a central axis O of the heat treatment boat and is sandwiched between two planes P1, P2 abutting the column 11 is referred to as a first region A1 and a region outside the first region A1 is referred to as a second region A2, with regard to one or more columns 11 among the plurality of columns, the support section 11a connected to the column 11 supports the rear surface of the semiconductor wafer in the second region A2.
H01L 21/22 - Diffusion des impuretés, p.ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductrices; Redistribution des impuretés, p.ex. sans introduction ou sans élimination de matériau dopant supplémentaire
H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p.ex. recuit, frittage
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
64.
METHOD FOR POLISHING CARRIER PLATE, CARRIER PLATE, AND METHOD FOR POLISHING SEMICONDUCTOR WAFER
Provided is a method that enables efficient polishing of upper and lower surfaces of a carrier plate which is used for double-side polishing step for a semiconductor wafer and that has not been used since manufacture. This method for polishing a carrier plate is characterized by: using, as a polishing pad in a double-side polishing apparatus, a polishing pad having on a surface thereof an abrasive-containing layer in which abrasive grains with a particle size of greater than or equal to 2 μm are embedded; holding a carrier plate to be polished that has not been used since manufacture between an upper surface plate and a lower surface plate of the double-side polishing apparatus; and polishing both sides of the carrier plate to be polished by supplying a polishing fluid while relatively rotating the carrier plate to be polished and the upper surface plate and the lower surface plate.
The silicon wafer polishing method according to the present invention comprises performing, as a final polishing step, a prior stage polishing step and a subsequent finishing polishing step. In the final polishing step, the finishing polishing step includes a finishing slurry polishing step using as the second polishing liquid a polishing liquid having an abrasive grain density of 1 × 1013/cm3or higher, and a pre-polishing step performed prior to the finishing slurry polishing step and using as the second polishing liquid a polishing liquid having an abrasive grain density of 1 × 1010/cm3 or lower. The silicon wafer production method comprises forming a notch portion in the outer peripheral portion of a single crystal silicon ingot grown by the Czochralski method, thereafter, performing slicing to obtain a silicon wafer, and then subjecting the obtained silicon wafer to the polishing processing by the aforementioned silicon wafer polishing method.
A wafer polishing method according to the present invention comprises: a step for obtaining a first correlation, which is a correlation between alkali concentration and chemical polishing rate, using a plurality of polishing solutions having different alkali concentrations, and obtaining a second correlation, which is a correlation between abrasive particle concentration and mechanical polishing rate, using a plurality of polishing solutions having different abrasive particle concentrations; a step for calculating the mechanical polishing rate/the chemical polishing rate, which is the ratio of the mechanical polishing rate to the chemical polishing rate, for the plurality of polishing solutions, on the basis of the first correlation and the second correlation; a step for acquiring the relationship between the ratio of the mechanical polishing rate to the chemical polishing rate and a wafer flatness index, and determining a specific range of ratios of the mechanical polishing rate to the chemical polishing rate; a step for selecting a first target polishing solution for which the ratio of the mechanical polishing rate to the chemical polishing rate is within the specific range, on the basis of the first correlation and the second correlation; and a step for polishing a wafer using the first target polishing solution. A wafer manufacturing method according to the present invention includes a step for carrying out a polishing process using the aforementioned wafer polishing method.
[Problem] To provide: a quartz glass crucible which is for pulling a silicon single crystal, is hardly deformed at a high temperature during a crystal pulling step, and can endure long-term pulling; and a manufacturing method therefor. [Solution] This quartz glass crucible 1 has an inner transparent layer 11, an air bubble layer 13, an outer transparent layer 15, and a crystallization promoter-containing layer 16, from the inner surface side of the crucible toward the outer surface side. An outer transition layer 14, in which the content of air bubbles decreases from the air bubble layer 13 toward the outer transparent layer 15, is provided in a boundary portion between the air bubble layer 13 and the outer transparent layer 15, and the thickness of the outer transition layer 14 is 0.1-8 mm.
C03B 20/00 - Procédés spécialement adaptés à la fabrication d'articles en quartz ou en silice fondue
C30B 15/10 - Creusets ou récipients pour soutenir le bain fondu
68.
METHOD FOR ESTIMATING OXYGEN CONCENTRATION IN SILICON SINGLE CRYSTAL, METHOD FOR PRODUCING SILICON SINGLE CRYSTAL, AND APPARATAUS FOR PRODUCING SILICON SINGLE CRYSTAL
[Problem] To provide: a method for estimating the oxygen concentration in a silicon single crystal, said method being capable of producing silicon single crystals having the same quality by preventing bipolarization of the oxygen concentration in the silicon single crystals; a method for producing a silicon single crystal; and an apparatus for producing a silicon single crystal. [Solution] In a method for estimating the oxygen concentration in a silicon single crystal according to the present invention, when a silicon single crystal is pulled up, while applying a horizontal magnetic field to a silicon melt in a quartz crucible, the height (gap) of the melt surface is measured (S21) and the oxygen concentration in the silicon single crystal is estimated from microscopic fluctuations of the height (gap) of the melt surface (S22 to S26).
C30B 15/22 - Stabilisation, ou commande de la forme, de la zone fondue au voisinage du cristal tiré; Commande de la section du cristal
C30B 30/04 - Production de monocristaux ou de matériaux polycristallins homogènes de structure déterminée, caractérisée par l'action de champs électriques ou magnétiques, de l'énergie ondulatoire ou d'autres conditions physiques spécifiques en utilisant des champs magnétiques
Provided is a silicon single crystal growing method in which a silicon single crystal is pulled and made to grow by the Czochralski method from a dopant-added molted liquid in which a dopant has been added to a silicon molten liquid. A critical CV value, which is the product of the dopant concentration C and the pulling velocity V at a time when abnormal growth has occurred in the silicon single crystal, is calculated, and the silicon single crystal is grown with at least one of the dopant concentration C and the pulling velocity V being controlled such that the CV value, which is the product of the dopant concentration C and the pulling velocity V, is less than the critical CV value.
[Problem] To provide a single crystal production method, a magnetic field generator, and a single crystal production device, which allow the in-plane distribution of oxygen concentration in a single crystal to be uniform. [Solution] This single crystal production method comprises pulling-up a single crystal 3 while applying a horizontal magnetic field onto a melt 2 in a crucible 11. During the crystal pull-up step, the crucible 11 is raised to meet the decrease in the melt 2, and the magnetic field distribution is controlled to meet the decrease in the melt 2 in such a manner that the orientation of the magnetic field on the melt surface 2s and the orientation of the magnetic field on the inner surface at the curved bottom portion of the crucible 11 are constant from the beginning to the end of a body portion growth step.
C30B 30/04 - Production de monocristaux ou de matériaux polycristallins homogènes de structure déterminée, caractérisée par l'action de champs électriques ou magnétiques, de l'énergie ondulatoire ou d'autres conditions physiques spécifiques en utilisant des champs magnétiques
71.
DIFFERENTIAL PRESSURE MEASUREMENT DEVICE AND DIFFERENTIAL PRESSURE MEASUREMENT METHOD
Provided are a differential pressure measurement device and a differential pressure measurement method whereby a differential pressure between the pressure in an above-floor region and the pressure in an under-floor region can be measured with good precision even when the differential pressure is small. A differential pressure measurement device 1 is characterized by comprising: a differential pressure measurement unit 11 having a first port 11a for acquiring the pressure in an above-floor region 100c and a second port 11b for acquiring the pressure in an under-floor region 100d, one end 12a of a first piping 12 being connected to the first port 11a, and one end 13a of a second piping 13 being connected to the second port 11b; and a cup 14 to which the other end 13b of the second piping 13 is connected, the cup 14 forming a space for measuring the pressure in the under-floor region 100d between the cup 14 and a grating floor panel 102 when the cup 14 is positioned on the grating floor panel 102, the distance in a device height direction between the other end 12b of the first piping 12 and the other end 13b of the second piping 13 being fixed.
[Problem] To provide a single crystal production device equipped with a dopant supply device capable of supporting vertical movement of a heat shielding member without parts falling off or breaking. [Solution] The single crystal production device 1 is equipped with a chamber 10, a crucible 12 installed inside the chamber 10, a heat shielding member 16 disposed above the crucible 12, and a dopant supply device 20 that supplies a dopant from the outside of the chamber 10 to the inside of the crucible 12. The dopant supply device 20 includes a dopant supply tube 21 that passes through the chamber 10 and reaches to above the crucible 12. The dopant supply tube 21 has a first dope tube 24 that passes through the chamber 10 and a second dope tube 25 that is separate and independent from the first dope tube 24 and is disposed immediately below the first dope tube 24. The first dope tube 24 is separate and independent from the heat shielding member 16. The second dope tube 25 is separate and independent from the chamber 10 and is installed on the heat shielding member 16.
C30B 15/04 - Croissance des monocristaux par tirage hors d'un bain fondu, p.ex. méthode de Czochralski en introduisant dans le matériau fondu le matériau à cristalliser ou les réactifs le formant in situ avec addition d'un matériau de dopage, p.ex. pour une jonction n–p
73.
METHOD FOR PRODUCING SUPPORT SUBSTRATE FOR BONDED WAFER, AND SUPPORT SUBSTRATE FOR BONDED WAFER
The present invention provides a method for producing a support substrate for a bonded wafer that is obtained by bonding a substrate for an active layer and the support substrate to each other, with an insulating layer being interposed therebetween. This method for producing a support substrate for a bonded wafer comprises: a support substrate main body preparation step (S21) for preparing a support substrate main body that is composed of a silicon single-crystal wafer; an oxide film formation step (S22) for forming an oxide film on the support substrate main body; a polycrystalline silicon layer deposition step (S23) for depositing a polycrystalline silicon layer on the oxide film; a protective oxide film formation step (S24) for forming a protective oxide film on the surface of the polycrystalline silicon layer; and a polishing step (S25) for polishing the polycrystalline silicon layer, while removing the protective oxide film by polishing.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
74.
METHOD FOR CLEANING PIPE OF SINGLE WAFER CLEANING DEVICE
The purpose of the present invention is to propose a method for suppressing an abrupt increase in the number of particles detected on a wafer surface when cleaning of a wafer W is performed repeatedly using a single wafer cleaning device. The method is characterized by comprising a pipe cleaning step for cleaning a pipe of a pure water supply line 15 of a single wafer cleaning device 100 by introducing pure water that contains micro-nano bubbles into the pure water supply line 15, the single wafer cleaning device 100 comprising: a rotatable stage 11; a chemical liquid supply nozzle 12 for supplying a chemical liquid onto a wafer W mounted on the stage 11; a pure water supply nozzle 13 for supplying the pure water onto the wafer W mounted on the stage 11; a chemical liquid supply line 14 for supplying the chemical liquid to the chemical liquid supply nozzle 12; the pure water supply line 15 for supplying the pure water to the pure water supply nozzle 13; and a waste liquid line 17 for collecting and draining the chemical liquid and pure water that have been supplied.
A carrier measurement device (1) comprises a rotating table (23), a table drive motor (24), an upper thickness sensor (41), a lower thickness sensor (42), and a sliding part (13). The rotating table (23) includes a carrier storage part (23A) for horizontally storing a carrier (21) which is formed with an eccentric hole (21A) for holding a semiconductor wafer. The table drive motor (24) rotates the rotating table (23) about a central axis thereof as the axis of rotation. The upper thickness sensor (41) and the lower thickness sensor (42) are disposed above and under the carrier (21), and measure the thickness of the carrier (21) in a non-contact manner. The sliding part (13) slides the rotating table (23) in a horizontal direction. The carrier storage part (23A) is formed to be capable of storing the carrier (21) such that the center of the hole (21A) and the center of the rotating table (23) align with each other.
B24B 37/28 - Supports de pièce pour rodage double face de surfaces planes
B24B 41/06 - Supports de pièces, p.ex. lunettes réglables
B24B 49/12 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meuler; Agencements de l'appareillage d'indication ou de mesure, p.ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs optiques
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
Provided is a method for growing a silicon single crystal by the Czochralski method, using a silicon single crystal growing device comprising a chamber, a crucible, a heating unit that heats a silicon melt contained in a crucible, and a lifting unit that causes a seed crystal to come into contact with the silicon melt and then lifts up the seed crystal. The heating unit includes an upper heating unit that heats the upper part of the crucible and a lower heating unit that heats the lower part of the crucible. The growing of the silicon single crystal has a dopant addition step (S4) for adding a volatile dopant to the silicon melt and a lifting step (S5) for lifting the silicon single crystal after the dopant addition step (S4). In the dopant addition step (S4), the crucible is heated such that the heat generation quantity (Qd) of the lower heating unit is greater than the heat generation quantity (Qu) of the upper heating unit, without forming a solidified layer at the liquid level of the silicon melt.
SSSS between the melt surface 2a and the lower end of the seed crystal 5 from the distance from the center coordinates of the real-image edge approximate circle to the center coordinates of the mirror-image edge approximate circle.
[Problem] To prevent dislocation of a monocrystal by adding a granular subsidiary dopant during pulling up of a crystal. [Solution] The production method for a silicon monocrystal according to the present invention comprises: a melting step for producing a silicon melt 3 containing a primary dopant; and a crystal pull-up step for pulling up a silicon monocrystal 2 from the silicon melt 3. The crystal pull-up step includes at least one additional doping step for adding a dopant raw material 5 containing a subsidiary dopant to the silicon melt 3. The flow rate of Ar gas during a first period in which the subsidiary dopant 5 is not added is set to a first flow rate, and the flow rate of Ar gas during a second period including a period in which the subsidiary dopant 5 is being added is set to a second flow rate higher than the first flow rate.
C30B 15/04 - Croissance des monocristaux par tirage hors d'un bain fondu, p.ex. méthode de Czochralski en introduisant dans le matériau fondu le matériau à cristalliser ou les réactifs le formant in situ avec addition d'un matériau de dopage, p.ex. pour une jonction n–p
Provided is a wafer polishing method for polishing a wafer using a polishing device. The wafer polishing method includes: acquiring in-plane thickness distribution information for the polishing target wafer or a wafer to which the same processing as the polishing target wafer has been performed; on the basis of the in-plane thickness distribution information, determining a pressure difference between a pressure Pc applied to a central part of the polishing target wafer via introducing a gas into a central region of a space part of a polishing head, and a pressure Pe applied to a peripheral part of the polishing target wafer via introducing the gas into a peripheral region of the space part; determining one of the pressures among Pc and Pe, and on the basis of the determined pressure and the pressure difference, determining the other pressure; on the basis of a setting value Pr for contact pressure applied to a bottom surface of a second ring-shaped member of the polishing head via contact with the polishing head during polishing, determining a pressure Pg that is applied downward from a head main body part of the polishing head by pressing the head main body part; and polishing via putting a bottom surface of the polishing target wafer into contact with a polishing pad in a state in which the determined Pg, Pc, and Pe are imparted.
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/322 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour modifier leurs propriétés internes, p.ex. pour produire des défectuosités internes
81.
WORKPIECE CLEANING PROCESS METHOD AND WORKPIECE CLEANING PROCESS SYSTEM
In this workpiece cleaning process method and system, the diameter of holes in an upper rectifying plate is less than the diameter of holes in a lower rectifying plate. In this workpiece cleaning process method, a supply flow rate Q (L/min) of a cleaning solution is determined on the basis of the total area A (mm2) of a plurality of holes in the lower rectifying plate and the total area B (mm2) of a plurality of holes in the upper rectifying plate, or the total area A (mm2) and/or the total area B (mm2) is determined on the basis of the supply flow rate Q (L/min). This workpiece cleaning process system furthermore comprises a calculation unit that determines the supply flow rate Q (L/min) of the cleaning solution on the basis of the total area A (mm2) and the total area B (mm2), and a control unit that performs a control to supply the cleaning solution at the determined supply flow rate Q (L/min). The total area A (mm2), the total area B (mm2), and the determined supply flow rate Q (L/min), or the supply flow rate Q (L/min) and the determined total area A (mm2) and/or total area B (mm2), satisfy a prescribed relational expression.
According to the present invention, the sum and the ratio of the torque of a sun gear and the torque of a internal gear are controlled to be within predetermined ranges.
B24B 37/005 - Moyens de commande pour machines ou dispositifs de rodage
B24B 37/08 - Machines ou dispositifs de rodage; Accessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage double face
B24B 49/16 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meuler; Agencements de l'appareillage d'indication ou de mesure, p.ex. pour indiquer le début de l'opération de meulage tenant compte de la pression de travail
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
This device (1) for polishing the outer periphery of a wafer comprises: a stage (11) for retaining a disc-shaped wafer (31) horizontally; a rotational drive part (12) for rotating the stage (11) about the center axis thereof as a rotational axis; polishing heads (13, 14, 15, and 16) in which polishing pads (21, 22, 23, 24, 25, 26, 27 , and 28) are mounted on the inner peripheral surfaces thereof; and a polishing head driving mechanism (30) for bringing the polishing heads (21-28) into contact with the outer periphery (41) of a wafer (31), and sliding the polishing heads (13-16) in the vertical direction or a direction inclined with respect to the center axis of the wafer (31) while applying a prescribed polishing pressure to the outer periphery (41) of the wafer (31). Two or more types of polishing heads (21-28) having different physical properties are mounted in the vertical direction on the inner peripheral surfaces of the polishing heads (13-16).
Provided is a semiconductor wafer evaluation method for evaluating a semiconductor wafer using a laser surface inspection device. The semiconductor wafer has a coating layer provided on a semiconductor substrate. The laser surface inspection device comprises a first incidence system, a second incidence system that causes light to fall, on a surface to be illuminated, at a higher angle of incidence than that at which light is made to fall on the surface by the first incidence system, a first light reception system, a second light reception system, and a third light reception system. The three light reception systems differ in terms of at least one selected from the group consisting of polarization selectivity and the light reception angle of the reception of light radiated from the surface to be illuminated. The method includes evaluating the semiconductor wafer by detecting, as bright spots, a type of defect selected from the group consisting of deposits on the surface of the coating layer and non-deposit protruding defects on the surface of the coating layer on the basis of a plurality of measurement results including three types of low-incidence angle measurement results obtained as a result of the reception by the respective three light reception systems of radiated light that has been radiated as a result of the reflection or scattering, at the surface of the coating layer, of light incident on the surface from the first incidence system and at least one type of high-incidence angle measurement result obtained as a result of the reception by at least one of the three light reception systems of radiated light that has been radiated as a result of the reflection or scattering, at the surface, of light incident on the surface from the second incidence system.
Provided is a silicon wafer heat treatment method using a horizontal heat treatment furnace, the method: enabling the suppression of the reduction in the lifetime value of a silicon wafer disposed near a dummy block installed for temperature equalization of a wafer installation area; and improving product yield. The silicon wafer heat treatment method using a horizontal heat treatment surface 100 according to the present invention includes: disposing a boat 16 inside a cylindrical furnace core tube 12, and in doing so, disposing a first additional block 20S between a first dummy block 18S and a wafer group WF on the boat 16, and/or a second additional block 20H between a second dummy block 18H and the wafer group WF.
H01L 21/22 - Diffusion des impuretés, p.ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductrices; Redistribution des impuretés, p.ex. sans introduction ou sans élimination de matériau dopant supplémentaire
H01L 21/225 - Diffusion des impuretés, p.ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductrices; Redistribution des impuretés, p.ex. sans introduction ou sans élimination de matériau dopant supplémentaire en utilisant la diffusion dans ou hors d'un solide, à partir d'une ou en phase solide, p.ex. une couche d'oxyde dopée
H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p.ex. recuit, frittage
[Problem] To provide an evaluation method, an evaluation system, and a manufacturing method for a silicon wafer capable of correctly evaluating, in a short time, whether a crystal defect density belongs to a standard even when a crystal defect density distribution is eccentric. [Solution] In a method for evaluating a silicon wafer according to the present invention, whether or not a crystal defect density of a silicon wafer W belongs to a standard is evaluated by measuring a crystal defect density distribution in a plurality of radial directions with a wafer center as a reference location, a crystal defect density distribution in at least one radial direction, and a crystal defect density distribution in a circumferential direction of the wafer.
C30B 15/00 - Croissance des monocristaux par tirage hors d'un bain fondu, p.ex. méthode de Czochralski
H01L 21/322 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour modifier leurs propriétés internes, p.ex. pour produire des défectuosités internes
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c. à d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
G01N 21/956 - Inspection de motifs sur la surface d'objets
Provided is a support substrate for a bonded wafer, the support substrate (23) being used for a bonded wafer (30) in which an active-layer substrate (13) and the support substrate (23) are bonded with an insulating film (11) interposed therebetween, wherein: the support substrate for a bonded wafer comprises a support substrate body (20), and a polycrystalline silicon layer (22) deposited on the bonding-surface side of the support substrate body (20); and the grain size of the polycrystalline silicon layer (22) is 0.419 µm or less.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
88.
SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION METHOD
C30B 15/26 - Stabilisation, ou commande de la forme, de la zone fondue au voisinage du cristal tiré; Commande de la section du cristal en utilisant des détecteurs photographiques ou à rayons X
In a double-side polishing device according to the present invention, an upper plate or a lower plate: has at least one through-hole penetrating from the top surface to the bottom surface of the upper plate or the lower plate; additionally comprises at least one workpiece thickness measuring instrument with which it is possible to measure, in real-time, the thickness of a workpiece from the at least one through-hole while the workpiece is being polished; has a metal tube-shaped member provided to an inner peripheral surface of the upper plate or the lower plate, said surface being demarcated by the through hole; and additionally comprises either a bottom-side window material provided to the bottom part of the tube-shaped member provided to the upper plate and a top-side window material provided so as to cover the top side of the through-hole provided to the upper plate, or a top-side window material provided to the top part of the tube-shaped member provided to the lower plate and a bottom-side window material provided so as to cover the bottom side of the through-hole provided to the lower plate.
B24B 37/013 - Dispositifs ou moyens pour détecter la fin de l'opération de rodage
B24B 37/08 - Machines ou dispositifs de rodage; Accessoires conçus pour travailler les surfaces planes caractérisés par le déplacement de la pièce ou de l'outil de rodage pour un rodage double face
B24B 37/28 - Supports de pièce pour rodage double face de surfaces planes
B24B 49/12 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meuler; Agencements de l'appareillage d'indication ou de mesure, p.ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs optiques
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
90.
APPARATUS FOR CLEANING SEMICONDUCTOR WAFER AND METHOD FOR CLEANING SEMICONDUCTOR WAFER
[Problem] To provide a quarts glass crucible which can withstand a single crystal pulling process for an extremely long period such as a multiple pulling process and makes it possible to control the oxygen concentration or the crystal diameter of a silicon single crystal stably while reducing a gap between the quarts glass crucible and a carbon susceptor as possible. [Solution] The quarts glass crucible 1 according to the present invention is provided with: a crucible main body 10 comprising a silica glass; and a crystallization-promoter-containing layer 13 arranged on the outer surface of the crucible main body 10. The concentration of a crystallization promoter contained in the crystallization-promoter-containing layer 13 is 1.0 × 1013atoms/cm2to 4.8 × 1015atoms/cm2 inclusive.
Proposed is a method with which it is possible to deliver a semiconductor wafer to a single-surface polishing device without forming any scratches on the surface of the semiconductor wafer. A temporary receiving platform 22 has a holding part 11, a receiving platform 22, and a guide part 13. The receiving platform 22 has a plurality of annular protrusions 23 on the surface thereof. A spraying hole 23b is provided to an inner wall 23a of each of the protrusions 23, the spraying holes 23b spraying a liquid L along the inner walls 23a. Due to spraying of the liquid from the spraying holes 23b, a semiconductor wafer W is contactlessly held by suction. Spraying of the liquid L from the spraying holes 23b at a first flow rate is started; the semiconductor wafer W is placed on the holding part 11 to contactlessly hold the polishing surface of the semiconductor wafer W by suction; the receiving platform 22 is subsequently raised such that the semiconductor wafer W is affixed to a polishing head; and when the receiving platform 22 is to be lowered thereafter, the time from when the semiconductor wafer W is held by the holding part 11 to when the lowering of the receiving platform 22 is started is set to five seconds or longer.
Provided is a vapor phase growth device (1) that is capable of correcting a positional misalignment of a carrier (C) in the rotation direction relative to a wafer (WF) when the vapor phase growth device (1) is viewed in a plan view. The vapor phase growth device (1) comprises a load lock chamber (13) provided with a holder (17) for supporting the carrier (C), wherein the carrier (C) and the holder (17) are provided with a correction mechanism that corrects the position of the carrier (C) in the rotation direction when the vapor phase growth device (1) is viewed in a plan view.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
94.
SILICON SINGLE CRYSTAL MANUFACTURING METHOD, SILICON SINGLE CRYSTAL, AND SILICON WAFER
A silicon single crystal (1) comprises a shoulder section (1A), a trunk section (1B), and a tail section (1C). The trunk section (1B) is provided with: a first trunk section (1BA) which has a first diameter d1; and a second trunk section (1BC) which is located closer to the shoulder section (1A) than the first trunk section (1BA) and has a second diameter d2 that is 3.5–15% greater than the first diameter d1. First, the resistivity at an initial location of the trunk section (1B) connected to the shoulder section (1A) is set to a first resistivity. Then, the silicon single crystal (1) is pulled up and grown to form the first trunk section (1BA), and the resistivity at an initial location of the first trunk section (1BA) is set to a second resistivity that is lower than the first resistivity.
C30B 15/04 - Croissance des monocristaux par tirage hors d'un bain fondu, p.ex. méthode de Czochralski en introduisant dans le matériau fondu le matériau à cristalliser ou les réactifs le formant in situ avec addition d'un matériau de dopage, p.ex. pour une jonction n–p
95.
DEFECT INSPECTION METHOD FOR SILICON WAFER AND DEFECT INSPECTION SYSTEM FOR SILICON WAFER
According to the present invention, when viewed in a side view, an angle θ1 formed by the optical axis of incident light with respect to a surface (or virtual plane) of a silicon wafer is 67º to 78º, and when θ2 is the angle formed by the detection optical axis of a photodetector with respect to the surface (or virtual plane) of the silicon wafer, θ1-θ2 is -6º to -1º, or 1º to 6º.
[Problem] To provide: a quartz glass crucible capable of suppressing the peeling of a brown ring, and improving the yield of a silicon single crystal; and a method for producing the same [Solution] In a quartz glass crucible 1 according to the present invention, the peak in the distribution of the total concentration of Na, K, and Ca in the depth direction from the inner surface 10i thereof is present at a position deeper than the inner surface 10i.
Provided is a polishing pad press-attaching tool capable of quickly and safely attaching polishing pads by pressing same respectively to upper and lower platens of a double-side polishing device, while adequately limiting the amount of residual air pockets. A polishing pad press-attaching tool (30) comprises a disc plate (32) and a pressing member (36). The disc plate (32) is provided with teeth formed on an outer periphery (32A) and a through hole (34) formed in an outer peripheral portion, the teeth meshing with a sun gear and an internal gear of the double-side polishing device, the through hole (34) passing through the disc plate in the thickness direction. The pressing member (36) is held in the through hole (34), has a thickness (t2) that is greater than the thickness (t1) of the disc plate, and comprises a top surface (36A) for pressing an upper polishing pad and a bottom surface (36B) for pressing a lower polishing pad.
This method for producing an epitaxial silicon wafer includes carrying a wafer into a chamber, conducting epitaxy, carrying the wafer out of the chamber, and subsequently cleaning the inside of the chamber using hydrogen chloride, the method being characterized in that after the cleaning, on the basis of the cumulative supplied amount of hydrogen chloride, a determination is made whether to replace a member that is provided in the chamber and that comprises a base material containing graphite and a silicon carbide film covering the base material.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
[Problem] Provided are a system and method for producing a single crystal, the system and method being capable of preventing a calculation error and a setting error of a correction amount, and reflecting an appropriate amount of correction in the next batch. [Solution] This system 1 for producing a single crystal is provided with: a single crystal pulling device 10 that obtains a diameter measurement value of a single crystal during a pulling process of the single crystal by the CZ method, obtains a first diameter of the single crystal by using a diameter correction coefficient to correct the diameter measurement value, and controls the diameter of the single crystal on the basis of the first diameter; a diameter measuring device 50 that measures a diameter of the single crystal pulled by the single crystal pulling device 10 at room temperature to obtain a second diameter of the single crystal; and a database server 60 that acquires the first diameter and the second diameter from the single crystal pulling device 10 and the diameter measuring device 50, respectively, and manages the first diameter and the second diameter. The database server 60 calculates a correction amount of the diameter correction coefficient from the first diameter and the second diameter at the matched diameter measurement position, at room temperature, and corrects the diameter correction coefficient by using the correction amount.
Provided is a vapor phase growth apparatus (1) that can suppress an influence of a position of a lift pin on an epitaxial layer without adjusting an upper/lower heating ratio of a wafer (W). A reaction chamber (111) is provided with: a suscepter (112) mounting a carrier (C); and a carrier lift pin (115) moving the carrier (C) up and down relative to the suscepter (112), and the carrier lift pin (115) is installed in an outer side than an outer edge of the wafer (WF) in a plan view of a state where the carrier (C) supporting the wafer (WF) is mounted on the suscepter (112).
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
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