This information processing device comprises: an acquisition unit that acquires echoes, which are reflected light due to reflection of laser light emitted from an irradiation device by an object; a determination unit that determines, on the basis of the signal intensity of the acquired echoes, whether or not to use, among the echoes, a multi-echo due to two or more round-trip reflections between the irradiation device and the object to generate an image for detecting the object; and a generation unit that generates the image on the basis of the acquired echoes and the result of the determination.
An optical element according to an embodiment of the present disclosure comprises: a substrate; and an optical layer that has a plurality of first structures and is provided in a manner of being layered on the substrate. The optical layer has a first region and a second region. The center position of the first region is different from the center position of the second region. The optical layer can condense first polarized light incident on the first region, and can condense second polarized light which is different from the first polarized light and is incident on the second region.
The present technology pertains to a measurement device, a measurement method, a program, and an information processing system that make it possible to improve the measurement accuracy of a sensor. A measurement device according to the present technology comprises: a contact unit that irradiates an object to be measured with electromagnetic waves for measuring primary information used for calculating biological information of the object to be measured; and a signal processing unit that measures the primary information by using the contact unit. The signal processing unit determines reliability of a measurement result of the primary information using the contact unit, and determines the measurement result of the primary information to be output on the basis of a determination result of the reliability. The present technology can be applied, for example, to a smartwatch that measures biological information of a wearer.
A61B 5/0507 - Détection, mesure ou enregistrement pour établir un diagnostic au moyen de courants électriques ou de champs magnétiquesMesure utilisant des micro-ondes ou des ondes radio utilisant des micro-ondes ou des ondes térahertz
A61B 5/00 - Mesure servant à établir un diagnostic Identification des individus
A61B 5/145 - Mesure des caractéristiques du sang in vivo, p. ex. de la concentration des gaz dans le sang ou de la valeur du pH du sang
A61B 5/02 - Détection, mesure ou enregistrement en vue de l'évaluation du système cardio-vasculaire, p. ex. mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin
A photodetector according to one embodiment of the present disclosure comprises a first substrate and a second substrate. The first substrate has a first photoelectric conversion element including a first photoelectric conversion portion that generates a first charge by photoelectrically converting light, a first pad including a first bonding surface along a first plane, and a first via extending in a first direction intersecting the first plane. The second substrate has a second pad including a second bonding surface bonded to the first bonding surface, and a second via electrically connected to the second pad and extending in the first direction from the second pad. The first photoelectric conversion element and the first pad are electrically connected through the first via. The entirety of a first pad occupation region occupied by the first pad on the first plane overlaps in the first direction with a first via occupation region occupied by the first via on the first plane.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
5.
OSCILLATION CIRCUIT AND CONTROL METHOD OF OSCILLATION FREQUENCY
The present invention constitutes a frequency synchronization loop of an oscillation circuit without using an amplifier for comparing voltages. This oscillation circuit comprises: an oscillator; and a phase comparison unit that constitutes a feedback loop for the oscillator on the basis of the result of comparing phases obtained by converting the oscillation frequency of the oscillator. The phase comparison unit may include a first sub-oscillator that converts a reference voltage into a phase, and a second sub-oscillator that converts a control voltage obtained by converting the oscillation frequency of the oscillator into a phase. The phase comparison unit may include: a phase frequency detector (PFD) connected to subsequent stages of the first sub-oscillator and the second sub-oscillator; a charge pump circuit connected to a subsequent stage of the PFD; and a loop filter connected to a subsequent stage of the charge pump circuit.
H03L 7/085 - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence, y compris le filtrage ou l'amplification de son signal de sortie
H03L 7/089 - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence, y compris le filtrage ou l'amplification de son signal de sortie le détecteur de phase ou de fréquence engendrant des impulsions d'augmentation ou de diminution
[Problem] To appropriately radiate light at an optimal radiance. [Solution] A light radiation device comprising: a first measurement unit that measures the pupil diameter of a subject; a control unit that, on the basis of the pupil diameter measured by the first measurement unit, controls the radiance of light irradiating the eye of the subject; and a light source that radiates light at the radiance resulting from the control by the control unit.
A61F 9/008 - Procédés ou dispositifs pour la chirurgie de l'œil utilisant un laser
A61B 3/11 - Appareils pour l'examen optique des yeuxAppareils pour l'examen clinique des yeux du type à mesure objective, c.-à-d. instruments pour l'examen des yeux indépendamment des perceptions ou des réactions du patient pour mesurer la distance interpupillaire ou le diamètre de la pupille
A61B 3/113 - Appareils pour l'examen optique des yeuxAppareils pour l'examen clinique des yeux du type à mesure objective, c.-à-d. instruments pour l'examen des yeux indépendamment des perceptions ou des réactions du patient pour déterminer ou enregistrer le mouvement de l'œil
A61B 3/14 - Dispositions spécialement adaptées à la photographie de l'œil
A61N 5/06 - Thérapie par radiations utilisant un rayonnement lumineux
The present invention makes it possible for a plurality of loads to be driven while suppressing the interference of potential fluctuations via a power supply line. This drive circuit comprises: a plurality of drivers; and a switching unit capable of switching between isolation and connection of power supply potentials between the drivers. The drivers may be selectively connected to a first power supply potential or a second power supply potential. The switching unit may switch between the first power supply potential and the second power supply potential for each driver. A first power supply line for supplying the first power supply potential and a second power supply line for supplying the second power supply potential may be provided. The first power supply potential and the second power supply potential may be ground potentials of mutually isolated power supplies.
H04N 25/779 - Circuits de balayage ou d'adressage de la matrice de pixels
H04N 25/617 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit pour réduire les interférences électromagnétiques, p. ex. le bruit d'horloge
The present technology pertains to a light detection device and an electronic apparatus making it possible to reduce the occurrence of flaring and ghosting. The present invention comprises: a photoelectric conversion unit; light condensing units that condense light onto the photoelectric conversion unit; pixels having the light condensing units; and a pixel array unit in which the pixels are arranged in a matrix. The light condensing units have a shape in which axes of different lengths can be set, and the axes of adjacent light condensing units are set in different directions. The present invention can be applied to light detection devices that detect light.
The present invention suppresses an increase in power consumption and size while improving performance in a ranging module that performs ranging via a time of flight (ToF) method. This ranging module comprises a plurality of light emitting units, a support, and a light receiving unit. In the ranging module, the plurality of light emitting units each emit irradiation light. Furthermore, in the ranging module, the support supports the plurality of light emitting units in a manner enabling rotation thereof about a prescribed rotation axis. The light receiving unit receives reflected light of the irradiation light and determines the distance to an object.
A film formation simulation method according to the present disclosure comprises: calculating an adsorption probability of particles depending on a peripheral occupancy ratio indicating a peripheral occupancy state of the particles incident on a film-formation surface; using the adsorption probability to calculate a film reaction for each divided voxel obtained by dividing one voxel into a plurality of voxels; and stochastically determining a bound state of the particles on the surface of the film on the basis of a set binding database and calculating the coatability and quality of the film on the film-formation surface.
C23C 16/52 - Commande ou régulation du processus de dépôt
G06F 30/20 - Optimisation, vérification ou simulation de l’objet conçu
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
11.
LIGHT DETECTION DEVICE, IMAGING DEVICE, AND ELECTRONIC APPARATUS
The present disclosure pertains to a light detection device, an imaging device, and an electronic apparatus that enable miniaturization of pixel transistor layout. In a transistor having a gate in a Fin structure comprising a Fin section formed by a trench section excavated into a Si active structure forming a channel section, an end portion of an excavated section formed in the gate is configured to protrude outside the gate from either the source side or the drain side of the transistor adjacent to the gate. The present disclosure is applicable to an imaging device.
This camera device includes an imaging unit that images a predetermined space, a position identifying unit that, if there is a specific subject having a fixed position in the predetermined space, identifies, as a detected position, the position of the specific subject in an image obtained by the imaging, and an output processing unit that outputs information indicating the detected position of the specific subject as position information, wherein the output processing unit does not output an image for each imaging frame of the imaging unit.
This photodetection element comprises a light-receiving layer and an OCL layer. The light-receiving layer has a plurality of photoelectric conversion parts. The OCL layer: is positioned closer to the light-entering side as compared to the light-receiving layer; and has a plurality of on-chip lenses having a plurality of shapes. The OCL layer has, between the on-chip lenses having mutually different shapes, low refractive index parts having refractive indices lower than those of the on-chip lenses.
[Problem] To enable prevention of an increase in the size and scale of a distance measurement device, and enable storage of a measurement value for each pixel. [Solution] The present invention is provided with: a first pixel unit that outputs a first output value related to a time difference between a measurement light emission time and a return light detection time; a second pixel unit that is different from the first pixel unit and outputs a second output value related to the time difference between the measurement light emission time and the return light detection time; a storage unit that is capable of storing the first output value and the second output value; a control unit that causes, in a first mode, the first output value to be stored in a predetermined first storage region, and divides, in a second mode, the first storage region into a plurality of regions, causes the first output value to be stored in a first region which is among the plurality of regions, and causes the second output value to be stored in a second region which is among the plurality of regions and different from the first region; and a numerical value processing unit that limits, in the second mode, the first output value to a first range based on the output value of the first pixel unit in the first mode, causes the first output value to be stored in the first region, limits the second output value to a second range based on the output value, and causes the second output value to be stored in the second region.
This communication device comprises: a plurality of signal processing units that each output, to a corresponding lane among a plurality of lanes, an output clock signal and output data synchronized with the output clock signal and based on input data; and a first selection circuit that, in accordance with a reference lane selection signal for selecting a reference lane from the plurality of lanes, selects the output clock signal corresponding to the reference lane from among the output clock signals output from each of the plurality of signal processing units, and outputs the selected output clock signal to each of the plurality of signal processing units. Each of the plurality of signal processing units outputs the output clock signal and the output data after performing alignment on the basis of one of a reference clock signal and the output clock signal output from another signal processing unit among the plurality of signal processing units.
H04N 23/60 - Commande des caméras ou des modules de caméras
H04L 7/00 - Dispositions pour synchroniser le récepteur avec l'émetteur
H04N 5/073 - Dispositions ou circuits du côté émetteur pour verrouiller mutuellement plusieurs sources de signaux de synchronisation, p. ex. studios ou relais de télévision
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
16.
ELECTRONIC APPARATUS, SOLID-STATE IMAGING DEVICE, AND CONTROL METHOD
[Problem] To determine a weak sunspot. [Solution] An electronic apparatus comprises a first capacitor, a second capacitor, a comparator, a first switch, and a second switch. The first capacitor includes a first end connected to a reference signal output circuit that outputs a reference signal. The second capacitor includes a first end connected to a pixel that outputs an electric signal and includes a light-receiving element. The comparator includes a first input end connected to a second end of the first capacitor, and a second input end connected to a second end of the second capacitor, and compares the reference signal with the electric signal. The first switch is connected to the first end of the first capacitor and the second end of the first capacitor. The second switch is connected to the first end of the second capacitor and the second end of the second capacitor.
H04N 25/62 - Détection ou réduction du bruit dû aux charges excessives produites par l'exposition, p. ex. les bavures, les éblouissements, les images fantômes, la diaphonie ou les fuites entre les pixels
H04N 25/77 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
The present disclosure pertains to a light detection device that enables conversion efficiency to be improved. Provided is a light detection device comprising at least a semiconductor substrate having a photoelectric conversion unit and an amplification transistor, the amplification transistor including at least a portion of a floating diffusion layer, an insulating film on the floating diffusion layer, and a semiconductor layer on the insulating film. The present disclosure is applicable to, for example, a solid-state imaging device such as a CMOS image sensor.
[Problem] To enable accurate identification of multiple types of particles. [Solution] This particle detecting device comprises: a light emitting unit that emits light having a first polarization toward a particle to be detected; a light receiving unit that receives light having a second polarization reflected by the particle; a polarization determining unit that determines the degree of depolarization and polarization anisotropy between the first polarization and the second polarization; and a polarization detecting unit that, on the basis of the determination result obtained by the polarization determining unit, detects first information indicating that the particle is spherical or non-spherical, second information relating to the alignment orientation of the particle, and third information relating to the size of the particle.
G01N 15/00 - Recherche de caractéristiques de particulesRecherche de la perméabilité, du volume des pores ou de l'aire superficielle effective de matériaux poreux
G01N 21/49 - Dispersion, c.-à-d. réflexion diffuse dans un corps ou dans un fluide
G01N 21/53 - Dispersion, c.-à-d. réflexion diffuse dans un corps ou dans un fluide dans un courant de fluide, p. ex. dans la fumée
G01S 17/88 - Systèmes lidar, spécialement adaptés pour des applications spécifiques
A light detection device according to an embodiment of the present disclosure comprises: a photoelectric conversion layer; a first electrode provided on one surface side of the photoelectric conversion layer, the first electrode including a charge storage electrode capable of storing charge carriers generated by photoelectric conversion and a charge reading electrode that is set apart from the charge storage electrode and that reads the charge carriers; an oxide semiconductor layer provided between the photoelectric conversion layer and the first electrode; a protective layer provided between the photoelectric conversion layer and the oxide semiconductor layer, the protective layer, at least above the charge storage electrode, having a lesser film thickness than the other regions and having an opening; and a second electrode provided on the other surface side of the photoelectric conversion layer, which is on opposite side to the one surface.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10K 30/60 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photorésistances
The present technology relates to a light detection device and a ranging system that enable ranging accuracy to be improved. This light detection device is provided with: a readout circuit that outputs detection signals indicating the timing at which a light-receiving element detected reflected light resulting from the reflection of emitted light by an object; a time to digital converter (TDC) that counts time on the basis of the detection signals output from the readout circuit; a histogram generation unit that generates a histogram on the basis of the output of the TDC based on the detection signals; a first multiplexer that inputs, into a signal path between the readout circuit and the TDC, measurement signals for measuring propagation delay of signals in at least a portion of the signal path in time units smaller than the temporal resolution of the TDC; a propagation delay measurement unit that measures propagation delay on the basis of the output of the TDC based on the measurement signals in time units smaller than the temporal resolution of the TDC; and a correction unit that, on the basis of measurement results from the propagation delay measurement unit, corrects the output of the TDC based on the detection signals or the output of the histogram generation unit. The present technology can be applied, for instance, to a direct ToF type ranging device.
G01C 3/06 - Utilisation de moyens électriques pour obtenir une indication finale
H04N 25/773 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F comprenant des circuits de comptage de photons, p. ex. des diodes de détection de photons uniques [SPD] ou des diodes à avalanche de photons uniques [SPAD]
The purpose of the present invention is to improve the flexibility of a voltage applied to a comparator in a reset phase for balancing differential inputs. This comparator comprises: a first transistor having a gate to which a first input is applied; a second transistor having a gate to which a second input is applied; a third transistor connected in series to the first transistor; a fourth transistor connected in series to the second transistor and having a gate connected to the gate of the third transistor; a fifth transistor connected to the first transistor and the second transistor; a bias capacitor connected to the gate of the fifth transistor; and a first switching unit that switches the connection of the gates of the third transistor and the fourth transistor between a first bias voltage and the drain of the third transistor.
H03K 5/08 - Mise en forme d'impulsions par limitation, par application d'un seuil, par découpage, c.-à-d. par application combinée d'une limitation et d'un seuil
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
The present invention improves flexibility in frame rate when acquiring difference information. This imaging device comprises: a photoelectric conversion unit that outputs a photoelectric conversion signal corresponding to charges accumulated by photoelectric conversion; and a difference information generation unit that generates difference information based on a difference value of the photoelectric conversion signal when the charges of the photoelectric conversion unit are accumulated. The photoelectric conversion unit may not be reset between the outputs of the photoelectric conversion signals used for generating the difference value. The difference information generation unit may include a subtractor that calculates the difference between the photoelectric conversion signals according to the accumulation of the charges of the photoelectric conversion unit.
H04N 25/707 - Pixels pour la détection d’événements
H04N 25/77 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
H04N 25/79 - Agencements de circuits répartis entre des substrats, des puces ou des cartes de circuits différents ou multiples, p. ex. des capteurs d'images empilés
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
23.
VEHICLE CONTROL SYSTEM, VEHICLE CONTROL METHOD, AND VEHICLE CONTROL PROGRAM
A vehicle control system according to the present disclosure comprises: an acquisition unit that acquires environment information indicating the surrounding environment of a vehicle; a drive control unit that controls autonomous driving of the vehicle on the basis of the environment information acquired by the acquisition unit; a detection unit that detects a manual driving vehicle traveling around the vehicle; and a restriction unit that, when the result of the detection by the detection unit indicates that a manual driving vehicle is traveling around the vehicle, restricts a traveling condition of the autonomous driving.
B60T 7/12 - Organes d'attaque de la mise en action des freins par déclenchement automatiqueOrganes d'attaque de la mise en action des freins par déclenchement non soumis à la volonté du conducteur ou du passager
B60T 8/00 - Dispositions pour adapter la force de freinage sur la roue aux conditions propres au véhicule ou à l'état du sol, p. ex. par limitation ou variation de la force de freinage
B60W 30/165 - Contrôle de la distance entre les véhicules, p. ex. pour maintenir la distance avec le véhicule qui précède suivant automatiquement le trajet d'un véhicule meneur, p. ex. "barre de remorquage automatique"
B60W 40/02 - Calcul ou estimation des paramètres de fonctionnement pour les systèmes d'aide à la conduite de véhicules routiers qui ne sont pas liés à la commande d'un sous-ensemble particulier liés aux conditions ambiantes
One purpose of the present invention is to provide a display device and an electronic equipment that are capable of improving image quality, for example. The display device has: a plurality of pixels arranged in a prescribed direction; a plurality of signal lines connected to the plurality of pixels; a drive unit that generates pixel signals to be outputted to the plurality of signal lines; and a switch unit that switches states of connection between the drive unit and each of the plurality of signal lines. The drive unit has a first drive unit and a second drive unit, and controls the switch unit such that the first drive unit and the second drive unit are separately assigned to each group of prescribed adjacent pixels.
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED]
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
G09G 3/3275 - Détails des circuits de commande pour les électrodes de données
25.
MULTILAYER FILM FILTER, IMAGING ELEMENT, AND CAMERA MODULE
The present disclosure pertains to: a multilayer film filter with which it is possible to provide a highly-reliable filter; an imaging element; and a camera module. The multilayer film filter comprises: a first electrode provided to a light-entering surface side; a second electrode forming a pair with the first electrode; and, between the first electrode and the second electrode, an electrooptical layer formed from an electrooptical material of which the refractive index changes due to voltage, and a first insulating layer provided between the first electrode and the electrooptical layer and/or a second insulating layer provided between the second electrode and the electrooptical layer. The present technology can be applied to, for example, a Fabry-Perot type spectroscope.
A semiconductor device according to one embodiment of the present disclosure comprises a semiconductor substrate that has opposite first and second surfaces, a first transistor that is provided to the first surface of the semiconductor substrate, and a second transistor that is provided to the first surface of the semiconductor substrate and has a gate electrode that includes a vertical part that extends in a first direction that is the thickness direction of the semiconductor substrate such that one end in the extension direction is embedded in the semiconductor substrate and the other end is at a different position from an upper surface of a gate electrode of the first transistor with respect to the first direction.
A light detection device comprises a pixel disposed on a substrate, the pixel having a photoelectric conversion layer that generates an electric charge by incident light, an upper electrode provided on the light incident surface side of the photoelectric conversion layer, and a lower electrode provided on the surface opposite to the light incident surface of the photoelectric conversion layer, the lower electrode having a protruding electrode extending toward the photoelectric conversion layer in the thickness direction of the photoelectric conversion layer, and the protruding electrode being provided along the inner periphery of the lower electrode in a plan view of the substrate and including a reflective material that reflects incident light.
[Problem] To realize low power consumption and noise reduction. [Solution] This solid-state imaging device is provided with a pixel circuit, a first amplification circuit, an integration circuit, and a second amplification circuit. The pixel circuit performs photoelectric conversion on incident light and outputs a first voltage signal corresponding to an intensity. The first amplification circuit receives an input of the first voltage signal and a feedback signal, and outputs a current signal based on the magnitude of the first voltage signal. The integration circuit integrates the current signal and outputs a second voltage signal. The second amplification circuit amplifies and outputs the difference between the second voltage signal and a reference voltage signal.
A system (7) is a mobile electronic device, for example a smartphone, and includes a ToF device (1), an image sensor (5), and circuitry (6). The ToF device (1) includes an illuminator (2) to emit light spots (11) to a scene (9) which includes an object (10), a ToF camera module (3) to obtain ToF data of the scene (9), and a controller (4) to control the ToF device (1) to perform a ToF measurement to obtain the ToF data. The ToF device (1) preferably uses one or more macropixels which are configured according to light spots (11) or light patterns emitted by the illuminator associated with the macropixel. The image sensor (5) captures a color image of the scene (9) to obtain RGB or grey scale image data. The position and orientation of the image sensor (5) and the ToF camera module (3) against each other is fixed and calibrated. The circuitry (6) segments the image to obtain image segments. The ToF device (1) preferably detects peaks in the macropixel histograms and calculates, for each macropixel histogram, the distances for the peaks. The ToF device (1) outputs the ToF data including one or more macropixel histograms corresponding to the configured one or more macropixels to the circuitry (6) which then processes the one or more micropixel histograms. The circuitry (6) matches the calculated distances with the image segments. A machine learning algorithm, preferably a trained neural network, may be used to match the distance information with the image segments.
[Problem] To join chips more appropriately. [Solution] This semiconductor apparatus comprises: a first semiconductor device including a plurality of first metal bump pads including a first metal bump pad, and a plurality of first dummy bump pads including a first dummy bump pad; a second semiconductor device including a plurality of second metal bump pads including a second metal bump pad, and a plurality of second dummy bump pads including a second dummy bump pad: a plurality of metal bumps including a first metal bump; and a plurality of dummy bumps including a first dummy bump. The first semiconductor device and the second semiconductor device are electrically connected via the first metal bump, the first metal bump pad, and the second metal bump pad, and physically connected via the first dummy bump, the first dummy bump pad, and the second dummy bump pad.
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
31.
ANTENNA UNIT, ANTENNA DEVICE, AND MEASUREMENT SYSTEM
An antenna unit according to one embodiment of the present technology is used for at least one of distance measurement or positioning by a wireless signal and includes a housing, an antenna part, and a fixing part. The housing has a first end and a second end facing each other. The antenna part has a ground plane disposed to face the first end in the housing and an antenna element disposed between the ground plane and the first end. The fixing part is provided on at least one of the first end or the second end and fixes the housing to a fixing target.
The present disclosure relates to a communication device and a communication method that make it possible to suppress a decrease in transmission efficiency. Provided is a communication device comprising a communication unit that receives data transmitted from another communication device connected via an A-PHY interface defined by an A-PHY standard, wherein the communication unit transmits, to another communication device, a packet including a data length of read data for each address of a register included in the other communication device. For example, the present disclosure can be applied to a communication device conforming to the A-PHY standard.
G06F 13/42 - Protocole de transfert pour bus, p. ex. liaisonSynchronisation
G06F 13/12 - Commande par programme pour dispositifs périphériques utilisant des matériels indépendants du processeur central, p. ex. canal ou processeur périphérique
G06F 13/36 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus ou au système à bus communs
G06F 13/38 - Transfert d'informations, p. ex. sur un bus
33.
VOLTAGE RAMP GENERATOR FOR ANALOG-TO-DIGITAL CONVERSION AND SOLID-STATE IMAGING DEVICE
A voltage ramp generator includes unit cells (331) electrically connected in parallel. Each unit cell switches between an on-state and an off-state in response to a cell-specific select signal (S1-Sn). A current mirror circuit (350) copies a reference current controlled by the unit cells at a predefined current ratio into a first detector current flowing in a first detection branch. An error detection circuit (390) generates an active first error signal (ERR) if the first detector current falls below a lower threshold current or exceeds an upper threshold current.
H03K 4/02 - Génération d'impulsions ayant comme caractéristique essentielle une pente définie ou des parties en gradins avec parties en gradins, p. ex. en forme d'escalier
H03K 4/08 - Génération d'impulsions ayant comme caractéristique essentielle une pente définie ou des parties en gradins à forme triangulaire en dents de scie
34.
SOLID-STATE IMAGING ELEMENT, LIGHT DETECTION DEVICE, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT
The present invention reduces variation in current in a solid-state imaging element in which a transistor serving as a current source is provided in each pixel. A current source transistor, a switch circuit, a capacitive element, and a sample-and-hold switch are provided in each of a plurality of pixels. The current source transistor has a source connected to a ground node, and supplies a predetermined drain-source current. One end of the capacitive element is connected to a gate of the current source transistor. The switch circuit opens and closes a path between an amplifying transistor and the current source transistor in accordance with a predetermined control signal. The sample-and-hold switch has a different polarity from the transistor in the switch circuit, and samples and holds a predetermined bias voltage in the capacitive element in accordance with a control signal.
H04N 25/70 - Architectures de capteurs SSISCircuits associés à ces dernières
H04N 25/707 - Pixels pour la détection d’événements
H04N 25/771 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des moyens de stockage autres que la diffusion flottante
35.
SEMICONDUCTOR PACKAGE, IMAGING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE
The present invention achieves high-speed transmission in a wafer level package. This semiconductor package is provided with a semiconductor chip, a first mold resin, a through via, and a rewiring layer. In the semiconductor package, the first mold resin covers the side surface of the semiconductor chip. In addition, in the semiconductor package, the through via penetrates the first mold resin. Further, the rewiring layer wires, as rewiring, a coplanar waveguide that connects a chip pad provided on the surface of the semiconductor chip and one end of the through via.
This imaging device comprises a plurality of pixel blocks arranged in a two-dimensional array. The plurality of pixel blocks is provided with a first pixel block and a second pixel block located in mutually different rows. Each of the first pixel block and the second pixel block is provided with a first pixel group and a second pixel group. The pixel arrangement direction of the first pixel group of the first pixel block and the pixel arrangement direction of the first pixel group of the second pixel block are different from each other.
Provided is a photonic crystal surface-emitting element that can increase freedom in the selection of an irradiation area. A photonic crystal surface-emitting element according to the present technology comprises at least one element that includes a light emitting element part and an optical element part provided on the emission side of the light emitting element part, said light emitting element part including an active layer and a photonic layer that are layered on each other.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/11 - Structure ou forme du résonateur optique comprenant une structure de bande photonique interdite
H01S 5/343 - Structure ou forme de la région activeMatériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p. ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH] dans des composés AIIIBV, p. ex. laser AlGaAs
38.
IMAGE SENSOR, IMAGING SYSTEM, AND IMAGE SENSOR CONTROL METHOD
The present invention prevents loss of information in an image sensor that compares signals. The image sensor is equipped with a level control circuit, a comparison unit, and a logic circuit. The level control circuit increases or decreases one of a pair of pixel signals by one of a plurality of gains. In addition, the comparison unit outputs a comparison result obtained by comparing the pair of pixel signals, one of which has been increased or decreased. In addition, the logic circuit generates compressed data by reversibly compressing a bit string in which comparison results corresponding to the plurality of gains are arrayed.
A light detection device disclosed herein comprises: a light-receiving layer which has a plurality of light-receiving elements and in which a plurality of pixels are arranged; a color splitter layer which has a metasurface structure and condenses incident light toward the light-receiving layer according to the wavelength of the incident light; a spacer layer that is disposed between the light-receiving layer and the color splitter layer; and a separation wall that is disposed between the light-receiving layer and the color splitter layer and blocks the incident light. When the distance between the color splitter layer and the light-receiving surface of the light-receiving layer is H, the wavelength of the incident light is λ, the refractive index of the spacer layer is n, the effective diameter of a light-condensing region corresponding to one pixel by the color splitter layer is A, the pixel pitch in the light-receiving layer is P, the height of the separation wall is h, and the width of the separation wall is w, the condition H ≤ h + (1/2.44) (n/λ)A x (A-P + w) (1) is satisfied.
Provided is a light-emitting device capable of stably performing desired pulsating light emission. A light-emitting device according to the present technology comprises: a photonic crystal surface light-emitting element including at least one light-emitting element part having an active layer and a photonic crystal layer; and a mounting substrate on which the photonic crystal surface light-emitting element is mounted. The at least one light-emitting element part includes a first light-emitting element part that is the light-emitting element part provided with a saturable absorption region
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H10H 20/813 - Corps ayant une pluralité de régions électroluminescentes, p. ex. LED à jonctions multiples ou dispositifs émetteurs de lumière ayant des régions photoluminescentes au sein des corps
[Problem] To provide a semiconductor device which is capable of maintaining a normal transistor operation even when the thickness of stacked semiconductor substrates is reduced. [Solution] A semiconductor device according to an embodiment comprises: a first semiconductor substrate; a second semiconductor substrate which is stacked on the first semiconductor substrate and has a first surface and a second surface opposite to the first surface, the second semiconductor substrate facing the first semiconductor substrate on one of the first and second surfaces; a third semiconductor substrate which is stacked on the second semiconductor substrate and faces the second semiconductor substrate on the other of the first and second surfaces; a first diffusion layer of a first conductivity-type impurity, the first diffusion layer being provided in the second semiconductor substrate from the first surface to the second surface; a transistor which is provided in the first diffusion layer on the first surface side; a first electrode which is provided in the first diffusion layer on the second surface side and is electrically connected to the first diffusion layer; and a supply wiring line which is provided on the first or third semiconductor substrate and is electrically connected to the first electrode so as to supply a reference voltage or a power supply voltage to the first electrode.
The objective of the present technology is to provide an information processing device that prevents a user from becoming inattentive when the user is moving in a direction based on the arrival angle of a signal. An information processing device according to one embodiment of the present technology is provided with: a first receiver (100) that is worn on the head of a user (U) and that receives an anchor signal transmitted from an anchor (20); and a second receiver (200) that is worn on the head of the user (U) in a position different from that of the first receiver, receives the anchor signal, and can communicate with the first receiver. The second receiver (200) includes: a first calculating unit (203A) that calculates a propagation time (T) of a communication signal when communicating with the first receiver; a second calculating unit (203B) that calculates a time difference (Δt) between the times at which the anchor sign was received by the first receiver and the second receiver; and a third calculating unit (203C) that calculates an arrival angle (Δφ) of the anchor signal on the basis of the propagation time and the time difference.
G01S 3/50 - Systèmes pour déterminer une direction ou une déviation par rapport à une direction prédéterminée en utilisant des antennes espacées et en mesurant la différence de phase ou de temps entre les signaux venant de ces antennes, c.-à-d. systèmes à différence de parcours les ondes arrivant aux antennes étant modulées en impulsion et le temps de leur arrivée étant mesuré
G01S 13/74 - Systèmes utilisant la reradiation d'ondes radio, p. ex. du type radar secondaireSystèmes analogues
The present technology relates to an imaging device and an electronic apparatus that make it possible to evaluate chips at a desired timing. The present technology comprises a first semiconductor element and a second semiconductor element that is laminated on the first semiconductor element, wherein, in a plan view, the second semiconductor element includes two regions which are a first region and a second region, an oxide film is provided between the first region and the second region, a side surface of the first region is flush with a first side surface of the first semiconductor element, and a side surface of the second region is flush with a second side surface of the first semiconductor element which is opposite from the first side surface. The present technology is applicable to, for example, an imaging device in which a plurality of semiconductor chips are laminated.
The present disclosure relates to a data processing device and a data processing method whereby it is possible to output event data at a higher compression rate. The present disclosure also relates to an event data output sensor. The occurrence of an event is detected on the basis of change in the brightness of light received by a plurality of event detection pixels, the occurrence density of event data indicating the content of the event is used as a basis to change the expression method of an encoding method for encoding the event data, and the event data is compressed. For example, the absolute and relative values of X-direction addresses of the event data within one line are changed on the basis of the occurrence density of the event data within one line. The present technology can be applied to, for example, an EVS that outputs event data on the basis of the occurrence of an event.
H04N 25/70 - Architectures de capteurs SSISCircuits associés à ces dernières
H04N 19/20 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage d'objets vidéo
H04N 19/90 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant des techniques de codage non prévues dans les groupes , p. ex. les fractales
H04N 25/707 - Pixels pour la détection d’événements
45.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
The present invention realizes a device and a method for performing analysis by synchronizing a plurality of sensor detection data items having different frame rates and inputting the same to an analysis part. A data processing part: inputs a camera frame that is an image generated by a camera at a frame rate P (fps) and a point cloud frame that has point cloud data indicating an object position generated by a LiDAR at a frame rate Q (fps) different from the frame rate P (fps); compares a time stamp of a frame unit in the camera frame with a time stamp of a component unit in the point cloud frame; synthesizes a plurality of point cloud frames that are continuously inputted; and generates a composite point cloud frame that is synchronized with the frame rate of the camera frame.
G06V 10/80 - Fusion, c.-à-d. combinaison des données de diverses sources au niveau du capteur, du prétraitement, de l’extraction des caractéristiques ou de la classification
G06V 20/58 - Reconnaissance d’objets en mouvement ou d’obstacles, p. ex. véhicules ou piétonsReconnaissance des objets de la circulation, p. ex. signalisation routière, feux de signalisation ou routes
Provided is a photonic crystal-surface emitting element in which the characteristics and productivity are improved by a laminated structure. A photonic crystal-surface emitting element (10) according to the present technology comprises: a first structure (ST1) including a substrate (101); and a second structure (ST2) disposed on the first structure (ST1), the second structure (ST2) including a layered structure (LS) in which at least a photonic crystal layer (105) and an active layer (104) are layered. A bonding interface (BI) is present between the first structure (ST1) and the second structure (ST2). According to the present technology, it is possible to provide a photonic crystal-surface emitting element in which the characteristics and productivity are improved by a laminated structure.
H01S 5/11 - Structure ou forme du résonateur optique comprenant une structure de bande photonique interdite
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
Provided is a light-emitting device which is capable of projecting multiple types of light projection beams, and in which each surface light-emitting element thereof is capable of switching at high speed. A light-emitting device according to the present technology comprises: a plurality of surface light-emitting elements; and a mounting substrate on which the plurality of surface light-emitting elements are flip-chip mounted. The plurality of surface light-emitting elements include multiple types of surface light-emitting elements. The present technology can provide a light-emitting device which is capable of projecting multiple types of light projection beams, and in which each surface light-emitting element thereof is capable of switching at high speed.
H01S 5/42 - Réseaux de lasers à émission de surface
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H10H 20/814 - Corps ayant des moyens réfléchissants, p. ex. des réflecteurs de Bragg en semi-conducteurs
H10H 20/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
H10H 29/24 - Ensembles de plusieurs dispositifs comprenant au moins un composant émetteur de lumière à semi-conducteurs couvert par le groupe comprenant plusieurs dispositifs émetteurs de lumière à semi-conducteurs
H10H 29/855 - Moyens de mise en forme du champ optique, p. ex. lentilles
48.
PHOTONIC CRYSTAL SURFACE EMITTING ELEMENT AND LIGHT EMITTING DEVICE
The present invention provides a photonic crystal surface emitting element which is capable of easily forming a photonic crystal layer while suppressing a decrease in the luminous efficiency. A photonic crystal surface emitting element according to the present technology comprises a light emitting element unit that has a layered structure in which a plurality of layers including at least one active layer and a photonic crystal layer are stacked, wherein the active layer has a single quantum well structure. With the photonic crystal surface emitting element according to the present technology, it is possible to provide a photonic crystal surface emitting element that makes it easy to form a photonic crystal layer while suppressing a decrease in the luminous efficiency.
H01S 5/185 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités horizontales, p. ex. lasers à émission de surface à cavité horizontale [HCSEL]
Provided is a semiconductor device including a first transistor and a second transistor connected in series by sharing a source/drain, the first transistor having a first gate electrode provided on a first surface of a first semiconductor substrate, the second transistor having a second gate electrode provided on a second surface of the first semiconductor substrate facing the first surface, and the first gate electrode and the second gate electrode at least partially overlapping when viewed from above the first semiconductor substrate.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10D 64/27 - Électrodes ne transportant pas le courant à redresser, à amplifier, à faire osciller ou à commuter, p. ex. grilles
H10D 84/83 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors IGFET de composants à effet de champ uniquement de transistors FET à grille isolée [IGFET] uniquement
Provided is, inter alia, a display device including a projection optical system and an eyepiece optical system that are separated, the display device being capable of calibrating video to be displayed. The present technology provides a display device comprising: a projection optical system that projects light toward an observer; an eyepiece optical system that is separated from the projection optical system and projects the light from the projection optical system to a pupil of the observer; and a graphic for calibration that is disposed at a predetermined position from the projection optical system and that is for calibrating video projected to the observer. The projection optical system has a light source and a light guide unit that guides light from the light source in the direction of the observer.
A receiving circuit according to the present disclosure comprises: a signal receiving unit that receives satellite signals in different frequency bands from the same satellite; a distance information acquiring unit that acquires distance information between a satellite position and a reception position on the basis of the satellite signals in different frequency bands received by the signal receiving unit; and a determining unit that compares the distance information of the different frequency bands acquired by the distance information acquiring unit to determine an irregularity of the satellite signal.
A storage device according to an embodiment of the present invention includes: a magnetoresistive element the resistance state of which can be varied between a first state and a second state by the application of voltage; a selection element that is connected to the magnetoresistive element; a load resistance circuit the resistance value of which is variable; and a write circuit that imparts voltage to the magnetoresistive element via the load resistance circuit. The write circuit switches voltage between a first voltage for setting the resistance state to the first state and a second voltage for setting the resistance state to the second state and outputs such voltage.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
The present invention corrects the luminance in real time without a frame memory. This display device comprises light-emitting elements, pixel circuits, a pixel array, a detection circuit, and an address generation circuit. The pixel circuit drives the light-emitting elements. In the pixel array, the light-emitting elements and the pixel circuits are arranged in a two-dimensional array. The detection circuit detects a current flowing through the light-emitting elements. The address generation circuit acquires, on the basis of the current detected by the detection circuit, a timing at which the light-emitting elements quench.
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED]
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
H10K 59/123 - Connexion des électrodes de pixel aux transistors à couches minces [TFT]
54.
COUNTER CIRCUIT, A/D CONVERTER, AND IMAGING DEVICE
The present invention enables acceleration of count operation while suppressing an increase in circuit scale. This counter circuit comprises: a main counting unit that performs counting on the basis of a first input; a sub-counting unit that is provided corresponding to the main counting unit and that performs counting on the basis of the time difference between the first input and a second input; and a control unit that controls the count timing of the sub-counting unit on the basis of the first input and the second input. The main counting unit may count clock pulses until an inversion timing of the first input is detected. The sub-counting unit may count clock pulses until an inversion timing of the second input is detected after the inversion timing of the first input is detected.
[Problem] To provide a solid-state imaging device in which an adverse effect on an image by a capacitor can be suppressed. A solid-state imaging device according to the present disclosure comprises a substrate including a photoelectric conversion unit and a charge storage unit, a charge transfer unit provided on the substrate, an insulating film provided on the substrate and the charge transfer unit, and a multilayer wiring structure provided in the insulating film, the multilayer wiring structure including a first capacitor provided in a first pixel of a plurality of pixels, and a shield layer provided between the first pixel and a second pixel of the plurality of pixels.
The present technology relates to an imaging element and a driving method that make it possible to expand a saturation margin. The present invention comprises: an ADC that performs AD conversion, the ADC including a comparator that compares an electrical signal from a pixel with a reference signal, and a counter that counts the time required for the electrical signal and the reference signal to match; and a control unit that includes a first even number of resistors, a first switch, and a first even number of second switches, with a first even number of ADCs regarded as one unit, and a second even number of comparators included in one ADC. In an auto-zero period, the control unit controls the first switch to be turned on in accordance with the number of comparators to be driven, and performs control such that a current is supplied to the comparators to be driven via the resistors connected to the first switch that is turned on. In a period other than the auto-zero period, the control unit controls the second switches to be turned on in accordance with the number of comparators to be driven, and performs control such that a current is supplied to the comparators to be driven via the second switches that are turned on. The present technology can be applied to, e.g., an imaging element.
The present disclosure relates to a light detection device for more suitably improving light condensing properties. A light detection device of the present disclosure includes a substrate on which a photoelectric conversion unit is formed for each pixel, a color filter formed for each pixel on a light-receiving surface side of the substrate, and a separation wall that partitions between the color filters for each pixel and in which an air gap is formed. A portion facing the air gap at the upper end of the separation wall on the light-receiving surface side is formed to have an uneven structure in a cross-sectional view. The present disclosure can be applied to, for example, a CMOS image sensor.
The present disclosure relates to a semiconductor device with which it is possible to more suitably improve PID protection capability of a protection element. A semiconductor device according to the present disclosure comprises a protected element formed on the front surface side of a semiconductor substrate, a protection element formed on the semiconductor substrate and electrically connected to the protected element, and a through hole penetrating from the rear surface of the semiconductor substrate to the front surface. Each of the protection element and the protected element has a PN junction, and in a cross-sectional view of the semiconductor substrate, the distance between the PN junction interface of the PN junction of the protection element and the back surface of the semiconductor substrate is smaller than the distance between the PN junction interface of the PN junction of the protected element and the rear surface of the semiconductor substrate. The present disclosure can be applied to, for example, a CMOS image sensor.
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H10D 84/80 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors IGFET
In the present invention, an information processing device is capable of generating sub-images to be sequentially displayed, and comprises: a first processing unit that, on the basis of a frame image, is capable of generating two or more sub-images among a plurality of sub-images having a plurality of pixel values and arranged in a predetermined arrangement pattern in the frame image; a detection unit that detects detection pixels to be processed, on the basis of the display order of corresponding pixels of the two or more sub-images and the pixel value difference between the pixels in the display order and on the basis of the coordinates of the frame image; and a second processing unit that executes processing for reducing the pixel value difference between corresponding pixels in the detection pixels.
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
H04N 25/773 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F comprenant des circuits de comptage de photons, p. ex. des diodes de détection de photons uniques [SPD] ou des diodes à avalanche de photons uniques [SPAD]
The present invention provides a light-emitting device in which the effects of heavy metal contamination are suppressed. A light-emitting device according to an embodiment of the present disclosure comprises: a first substrate having a first surface and one or more semiconductor elements; a second substrate having a second surface joined to the first surface and one or more light-emitting elements each containing a heavy metal; and one or more shielding bodies that impede the permeation of heavy metals. The one or more shielding bodies are provided in a region between the first surface of the first substrate and the one or more semiconductor elements, and/or in a region between the second surface of the second substrate and the one or more light-emitting elements.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
H01L 21/318 - Couches inorganiques composées de nitrures
H10H 20/00 - Dispositifs individuels émetteurs de lumière à semi-conducteurs inorganiques ayant des barrières de potentiel, p. ex. diodes électroluminescentes [LED]
Provided is a magnetic storage element comprising a first stack composed of: a storage layer formed from a ferromagnetic body; a first fixed layer formed from a ferromagnetic body; a first spacer layer that is sandwiched by the storage layer and the first fixed layer, and that causes antiferromagnetic exchange coupling between the storage layer and the first fixed layer; and a tunnel barrier layer that is provided to the opposite-side surface of the storage layer from the first spacer layer and that is formed of a non-magnetic body. The first stack is sandwiched by a first electrode and a second electrode.
[Problem] To provide a light detection device and an image processing system that leverage the characteristics of a SPAD. [Solution] This light detection device comprises: a plurality of pairs of photoelectric conversion elements that respectively detect incident photons; and a pixel circuit that, for each of the plurality of pairs of photoelectric conversion elements, outputs the number of photons detected by two photoelectric conversion elements that constitute a pair and are assessed to be in an in-focus state through comparison of the number of photons detected by the two photoelectric conversion elements constituting the pair, and does not output the number of photons detected by a pair of photoelectric conversion elements that are not assessed to be in the in-focus state.
H04N 25/773 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F comprenant des circuits de comptage de photons, p. ex. des diodes de détection de photons uniques [SPD] ou des diodes à avalanche de photons uniques [SPAD]
H04N 25/704 - Pixels spécialement adaptés à la mise au point, p. ex. des ensembles de pixels à différence de phase
[Problem] To provide a light detection device that can be reduced in size. [Solution] A light detection device according to an embodiment of the present disclosure comprises a first substrate, at least one second substrate laminated on the lower side of the first substrate, and a third substrate laminated on the lower side of the second substrate. The first substrate has a first circuit arrangement region in which a photoelectric conversion circuit for photoelectrically converting incident light is arranged, an opening region provided outside the first circuit arrangement region, and an electrode pad exposed from the opening region. The second substrate has a second circuit arrangement region facing the first circuit arrangement region, and a connection region provided outside the second circuit arrangement region and facing the electrode pad. The third substrate has a third circuit arrangement region facing the second circuit arrangement region, and a fourth circuit arrangement region provided outside the third circuit arrangement region and facing the electrode pad across the connection region.
H04N 25/70 - Architectures de capteurs SSISCircuits associés à ces dernières
H04N 25/79 - Agencements de circuits répartis entre des substrats, des puces ou des cartes de circuits différents ou multiples, p. ex. des capteurs d'images empilés
This display device comprises: a pixel region provided with a plurality of pixels; a contact region adjacent to the pixel region and provided with a contact part; and wiring extending from the pixel region to the contact region. Each of the plurality of pixels includes a light emission layer containing an organic material, and an anode electrode and a cathode electrode that are located on opposite sides across the light emission layer. The wiring connects the anode electrode and the contact part. In the contact region, the wiring includes a recess the bottom of which is in contact with the contact part.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H10K 50/814 - Anodes combinées à des électrodes auxiliaires, p. ex. une couche d'ITO combinée à des lignes métalliques
H10K 50/822 - Cathodes caractérisées par leur forme
H10K 50/824 - Cathodes combinées avec des électrodes auxiliaires
H10K 59/122 - Structures ou couches définissant le pixel, p. ex. bords
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
H10K 59/173 - Affichages à OLED à matrice passive comprenant des bords ou des masques d'ombre
H10K 59/179 - Interconnexions, p. ex. lignes de câblage ou bornes
H10K 59/95 - Ensembles de plusieurs dispositifs comprenant au moins un élément organique émetteur de lumière dans lesquels tous les éléments émetteurs de lumière sont organiques, p. ex. ensembles d'affichages à OLED
H10K 102/20 - Électrodes métalliques, p. ex. en utilisant un empilement de couches
65.
A SENSOR MODULE FOR MATERIAL IDENTIFICATION, A METHOD AND COMPUTER PROGRAM
A sensor module for material identification is provided in accordance with embodiments of the disclosure, the sensor module comprising: at least one triboelectric sensor made of a triboelectric material; and a sensor reset unit, the sensor reset unit being configured to perform a sensor reset process to reset a state of the at least one triboelectric sensor to an initial state; a measurement unit, the measurement unit being configured to acquire data from the triboelectric sensor corresponding to a first measurement once the sensor reset process has been performed. A corresponding method and computer program are also provided in accordance with embodiments of the disclosure.
G01N 27/60 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant les variables électrostatiques
B03C 7/00 - Séparation par effet électrostatique des solides mélangés
B29B 17/00 - Récupération de matières plastiques ou d'autres constituants des déchets contenant des matières plastiques
An integrated circuit includes a first power supply wiring and a first utilization circuit connected to the first power supply wiring. A voltage measurement unit measures a voltage drop in the first power supply wiring along a current flow direction. A processing unit monitors the voltage drop and outputs status information about a change in the voltage drop over time.
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
67.
LIGHT DETECTION DEVICE AND DISTANCE MEASUREMENT DEVICE
[Problem] To provide a light detection device and a distance measurement device in which it is possible to realize a multiplication region and a photoelectric conversion unit having suitable characteristics. [Solution] A light detection device according to the present disclosure comprises: a substrate (1) which includes, in a region of a single pixel, a first semiconductor layer (11), a second semiconductor layer (12), and a first multiplication region (R2), and in which the first semiconductor layer (11) has sensitivity with respect to infrared light in a first wavelength range, the second semiconductor layer (12) has sensitivity with respect to infrared light in a second wavelength range different from the first wavelength range, and has an absorption coefficient, with respect to the infrared light in the second wavelength range, greater than that of the first semiconductor, and the first multiplication region (R2) multiplies a carrier from the first semiconductor layer (11); and a first electrode (CA2) which is electrically connected to the first multiplication region (R2).
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
[Problem] To make it possible to suppress an increase in the scale of a pixel circuit and add signal charges for each of a plurality of pixels. [Solution] This imaging element comprises: a photoelectric conversion film provided across a plurality of pixels; first pixels, each having a pixel circuit electrically connected to the photoelectric conversion film, among the plurality of pixels; and second pixels, each having a pixel circuit electrically disconnected from the photoelectric conversion film, among the plurality of pixels. The first pixels are disposed so as to be capable of storing the signal charges generated by the second pixels.
The present invention makes it possible to sample and hold a comparator input while suppressing an increase in the exclusive area of a capacitor. This comparator comprises: an input capacitor connected to a comparator input; and a sample-and-hold circuit which passes a first voltage level and applies the first voltage level to the input capacitor, and which, when the first voltage level is cut off, samples and holds a second voltage level and applies the sample-and-hold voltage level to the input capacitor. A reference voltage generation circuit for applying a reference voltage to the comparator input may be provided. The comparator input may comprise a first comparator input and a second comparator input.
H03K 5/08 - Mise en forme d'impulsions par limitation, par application d'un seuil, par découpage, c.-à-d. par application combinée d'une limitation et d'un seuil
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
The present technology relates to: a capacitive element which enables capacity increase and miniaturization; and an imaging element. An upper wiring, a lower wiring, and a capacity unit in which three-dimensionally-provided capacitive elements are laminated in an even number of stages between the upper wiring and the lower wiring are provided. The capacitive elements: are formed of upper electrodes, lower electrodes, and capacitive films interposed between the upper electrodes and the lower electrodes; and are laminated such that the upper electrode of the capacitive element in the n-th stage is the lower electrode of the capacitive element in the (n+1)th stage. The present technology can be applied to, for example, a capacitive element included in an imaging element.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H04N 25/70 - Architectures de capteurs SSISCircuits associés à ces dernières
H04N 25/771 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des moyens de stockage autres que la diffusion flottante
H10D 1/68 - Condensateurs n’ayant pas de barrières de potentiel
A light detection device according to the present invention comprises a plurality of pixels which are two-dimensionally disposed, wherein each of the pixels has a photoelectric conversion unit and a plurality of multiplication units that are connected in parallel to each other and that are connected in series to the photoelectric conversion unit. The light detection device further comprises a semiconductor substrate in which the photoelectric conversion unit and the plurality of multiplication units are formed, wherein: each of the multiplication units is formed in a region of the semiconductor substrate where a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type are joined; the first semiconductor region is disposed at a center part of the pixel as viewed from the direction substantially perpendicular to the semiconductor substrate; and a plurality of the second semiconductor regions are disposed so as to overlap the first semiconductor region at parts other than the center part of the first semiconductor region as viewed from the direction substantially perpendicular to the semiconductor substrate.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
72.
SEMICONDUCTOR PACKAGE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE
The present invention provides a semiconductor package having a cavity, wherein reduction in size of the semiconductor package is achieved. The semiconductor package includes a substrate, glass, a semiconductor chip, a plurality of connectors, and a connection part. The glass seals the cavity between the glass and the surface of the substrate. The semiconductor chip is disposed in the cavity. The plurality of connectors are arranged so as to at least partially overlap a region of the cavity on the back surface opposite to the surface of the substrate. The connection part connects the plurality of connectors.
H01L 23/04 - ConteneursScellements caractérisés par la forme
H01L 23/08 - ConteneursScellements caractérisés par le matériau du conteneur ou par ses propriétés électriques le matériau étant un isolant électrique, p. ex. du verre
H01L 23/32 - Supports pour maintenir le dispositif complet pendant son fonctionnement, c.-à-d. éléments porteurs amovibles
73.
IMAGE SENSOR, PHOTODETECTION DEVICE, AND IMAGE SENSOR CONTROL METHOD
The present invention shortens the time before appropriate exposure is obtained in an image sensor having an Auto Exposure (AE) function. A predetermined number of photometric pixels and a predetermined number of normal pixels are arranged in a pixel array unit. A comparator compares a first pixel signal from the photometric pixel with a predetermined reference signal and outputs a comparison result. An exposure determination unit performs photometry on the basis of the comparison result, and determines whether or not a photometric amount exceeds a predetermined threshold. A vertical drive unit starts exposure of the normal pixel and the photometric pixel, and also drives the photometric pixel to output the first pixel signal. When the photometric amount exceeds the threshold, the vertical drive unit ends the exposure and drives the normal pixel to output a second pixel signal.
[Problem] To provide a display device and display system having a small circuit scale and low power consumption. [Solution] A display device according to the present disclosure comprises: a pixel array unit in which a plurality of pixels are arranged in a two-dimensional array; a plurality of drive circuits for applying a write voltage corresponding to a gradation value to a plurality of the pixels arranged in the same row; a plurality of load circuits for generating a current corresponding to the gradation value and providing feedback to corresponding drive circuits; a plurality of first switches for connecting corresponding pixels among the plurality of pixels arranged in the same row to corresponding drive circuits; and a plurality of second switches for connecting corresponding pixels among the plurality of pixels arranged in the same row to corresponding load circuits.
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
The present disclosure relates to an image processing device and method that make it possible to suppress a reduction in the quality of an image after defect correction while suppressing an increase in the amount of data outputted by an image sensor. The present invention converts the format of defect information about defective pixels in a pixel array that detects brightness and generates defect information for transmission, encodes image data that represents a brightness distribution detected at the pixel array and generates encoded image data at a bitrate set on the basis of a bitrate for the defect information for transmission, and multiplexes the defect information for transmission and the encoded image data and generates a bitstream. The present disclosure can be applied, for example, to an image processing device, an electronic apparatus, an image processing method, or a program.
The present technology relates to an information processing device, an information processing method, and an information processing system with which it is possible to achieve robust subject detection at a camera attachment position. An information processing device according to one embodiment of the present technology has a storage unit that stores an inference model generated by multi-task learning based on a captured image for learning to which a distance label from the imaging position to the position of a subject is added, with presence/absence detection that is a task for detecting a subject appearing within a range of distance serving as a threshold being taken as a first task, and detection of other information relating to the subject being taken as a second task. During inference using the inference model, the captured image is inputted to the inference model, and the result of the presence/absence detection is outputted. The present technology can be applied to an on-vehicle camera or an image sensor mounted to the on-vehicle camera.
An information processing device according to the present invention includes a segmentation unit, a refinement unit, and an image generation unit. The segmentation unit performs segmentation on an input image. The refinement unit performs refinement so that the contour of each segment obtained by the segmentation matches the contour of the corresponding object in the input image. The image generation unit generates a segmentation map by integrating the segments after the refinement.
This semiconductor device is provided with: a semiconductor component that has a semiconductor substrate, a protective substrate, and adhesive resin that is provided between the semiconductor substrate and the protective substrate and bonds the semiconductor substrate and the protective substrate; a mounting substrate on which the semiconductor component is mounted; and protective resin that contacts a side surface of the semiconductor component. A gap is formed at least between a portion of the adhesive resin and the protective resin.
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
The present technology relates to a measurement system, a measurement method, and an information processing method that make it possible to identify a region of interest with higher accuracy in a shorter period of time. The measurement system comprises a control unit that, for each of a plurality of electrodes included in an MEA disposed in a well in which cells are cultured, identifies a region of interest by performing processing based on measurement information different from measurement information obtained via measurements performed by the electrodes, and either performs new measurements using only electrodes included in the region of interest or deletes measurement information obtained by electrodes other than those included in the region of interest from the measurement information of the plurality of electrodes. The present technology can be applied to a measurement system.
[Problem] To suppress the impact of parasitic light sensitivity (PLS). [Solution] This solid-state imaging device comprises a pixel array and a control circuit. The pixel array has a plurality of light receiving pixels arranged therein. The control circuit: drives light receiving pixels for areas in the pixel array to acquire luminance values for the areas; determines a reading order on the basis of the acquired luminance values; and performs imaging by driving the plurality of light receiving pixels in the pixel array according to the reading order.
H04N 25/40 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p. ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner
H04N 23/54 - Montage de tubes analyseurs, de capteurs d'images électroniques, de bobines de déviation ou de focalisation
H04N 25/62 - Détection ou réduction du bruit dû aux charges excessives produites par l'exposition, p. ex. les bavures, les éblouissements, les images fantômes, la diaphonie ou les fuites entre les pixels
H04N 25/70 - Architectures de capteurs SSISCircuits associés à ces dernières
81.
ENCODING METHOD AND DECODING METHOD, AND INFORMATION PROCESSING SYSTEM
An encoding method according to the present disclosure comprises an encoding step of encoding first data, which includes coordinate information of a three-dimensional point cloud including coordinates of three axes represented by integers for each point and attribute information including correction information of each of the three axes for correcting each of the coordinates of the three axes, into second data including the coordinate information of the three-dimensional point cloud and the correction information which is common among the three axes. The encoding step adds the correction information of each of the three axes to the second data.
A color filter, wherein the color filter includes: a distributed Bragg reflector having a reflectance above a reflectance threshold in a first predetermined wavelength range; an intermediate layer arranged on the distributed Bragg reflector; a metasurface layer arranged on the intermediate layer; and wherein a configuration of the color filter, determined by design optimization, is such that the color filter has a transmittance spectrum with a peak in a second predetermined wavelength range that has a maximum at a predetermined wavelength, wherein the transmittance at the maximum exceeds a transmittance threshold.
Provided is a light detection sensor capable of performing more appropriate light detection by each of a first sensor and a second sensor. Specifically, this light detection sensor is configured to comprise: a first sensor that detects light in a first wavelength range; and a plurality of second sensors that detect light in a second wavelength range different from the first wavelength range. Light receiving parts of the plurality of second sensors are configured to be two-dimensionally arranged in a matrix at positions overlapping a light receiving part of the first sensor when viewed from the direction of the normal to a light incidence surface of the light receiving part of the first sensor. In other words, the first sensor and the second sensors are configured to be laminated on each other. Therefore, positional deviation between an imaging range by the first sensor and an imaging range by the second sensor can be suppressed, positional deviation between an image obtained by the first sensor and an image obtained by the second sensor can be suppressed, and these two images can be acquired coaxially.
G01J 1/02 - Photométrie, p. ex. posemètres photographiques Parties constitutives
H10F 30/20 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors
A light detection device according to an embodiment of the present disclosure comprises: a plurality of pixels, each of which includes a light-receiving element capable of receiving light and outputting a current, and is capable of outputting first signals based on the currents from the light-receiving elements; a selection circuit capable of selecting and outputting, for each period, a part of the first signals from the plurality of pixels; and a plurality of conversion circuits capable of converting the first signal input via the selection circuit to a second signal that is a digital signal.
H04N 25/705 - Pixels pour la mesure de la profondeur, p. ex. RGBZ
H04N 25/77 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
H04N 25/773 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F comprenant des circuits de comptage de photons, p. ex. des diodes de détection de photons uniques [SPD] ou des diodes à avalanche de photons uniques [SPAD]
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
The present disclosure relates to a light detection device capable of miniaturizing a pixel while increasing a saturation signal amount of the pixel. The light detection device comprises: a photoelectric conversion unit provided for each pixel; and an intra-pixel trench unit provided in the photoelectric conversion unit. A transparent electrode material is provided in the intra-pixel trench unit. The feature according to the present disclosure can be applied to, for example, a distance measuring system and the like for detecting the depth-direction distance to a subject.
The present invention shortens wiring lengths of a pixel group in an upper layer. This light detection device has a first pixel unit and a second pixel unit. The first pixel unit is provided with at least one first pixel having a photoelectric conversion unit formed on a semiconductor substrate. The second pixel unit is configured by arranging, in a matrix shape, a plurality of second pixels respectively having photoelectric conversion units from each of which an electric charge is transferred to a common pixel circuit, and is stacked on the first pixel unit, while being disposed so as to be shifted by an amount corresponding to the at least one first pixel thereof.
A gain-controlled solid-state imaging device, comprising a gain amplifier configured to amplify the output of photodiode, and circuitry configured to dynamically change the output of the amplifier during exposure in response to a feedback signal.
H04N 25/571 - Commande de la gamme dynamique impliquant une réponse non linéaire
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
88.
OPTICAL WIRELESS COMMUNICATION SYSTEM, METHOD FOR OPTICAL WIRELESS COMMUNICATION, TRANSMITTER DEVICE AND RECEIVER DEVICE
An optical wireless communication system including: a transmitter device having an array of Vertical-Cavity Surface-Emitting Lasers (VCSELs), wherein each VCSEL in the array is configured to emit a light beam in a different direction; and a receiver device having an array of Single Photon Avalanche Diodes (SPADs), wherein each SPAD in the array is configured to detect light from a different direction; a selective activation mechanism configured to activate a specific VCSEL and a specific SPAD based on their alignment to establish a communication link, without requiring physical alignment of the devices.
Distortion in the output of an amplifier circuit is reduced while improving driving efficiency. An amplifier circuit according to the present invention includes: a ΔΣ modulator for outputting a digital input by reducing the bit rate thereof; a PWM unit for generating a pulse width modulation (PWM) signal on the basis of the digital output of the ΔΣ modulator; a driver for generating an analog drive signal on the basis of the PWM signal; and a digital feedback unit for applying digital feedback on the basis of the result of a ΔΣAD conversion of the drive signal. The digital feedback unit may include a ΔΣ analog to digital converter (ADC) that performs AD conversion by oversampling the drive signal.
H03F 3/217 - Amplificateurs de puissance de classe DAmplificateurs à commutation
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/26 - Modifications des amplificateurs pour réduire l'influence du bruit provoqué par les éléments amplificateurs
H03F 1/34 - Circuits à contre-réaction avec ou sans réaction
Provided is a display device capable of suppressing reflection of near-infrared light at an electrode in the vicinity of a display area. The display device comprises the electrode provided in the vicinity of the display area, and a black sealing portion that covers the electrode such that, in a plan view, a part of the electrode protrudes beyond the sealing portion. The electrode has a transmission portion capable of transmitting near-infrared light at the part protruding beyond the sealing portion in a plan view.
H10K 50/86 - Dispositions pour améliorer le contraste, p. ex. en empêchant la réflexion de la lumière ambiante
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H10K 50/824 - Cathodes combinées avec des électrodes auxiliaires
A light detecting device according to an embodiment of the present disclosure comprises: a plurality of pixels each having a light receiving element, and including a first pixel and a second pixel each capable of outputting a first signal based on an electric current flowing through the light receiving element; a first switching circuit capable of switching a path of the first signal; and a plurality of converting circuits including a first converting circuit and a second converting circuit capable of converting the first signal, input via the first switching circuit, into a second signal, which is a digital signal. The first switching circuit is capable of outputting, to the first converting circuit or a converting circuit different from the first converting circuit, the first signal from the first pixel, and outputting, to the second converting circuit or a converting circuit different from the second converting circuit, the first signal from the second pixel.
H04N 25/779 - Circuits de balayage ou d'adressage de la matrice de pixels
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
G01S 17/18 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues dans lesquels des fenêtres en distance sont utilisées
H04N 25/705 - Pixels pour la mesure de la profondeur, p. ex. RGBZ
H04N 25/773 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F comprenant des circuits de comptage de photons, p. ex. des diodes de détection de photons uniques [SPD] ou des diodes à avalanche de photons uniques [SPAD]
92.
DISPLAY DEVICE, PRODUCTION METHOD FOR DISPLAY DEVICE, AND ELECTRONIC APPARATUS
Provided is a display device that comprises a first transistor that has a channel formation region within a semiconductor substrate, an oxygen supply layer that is layered above the semiconductor substrate, a second transistor that has a channel formation region within a first oxide semiconductor layer that is provided to an upper surface of the oxygen supply layer, a second oxide semiconductor layer that is provided to a lower surface of the oxygen supply layer, and a light-emitting element that is layered above the oxygen supply layer and connected to the first transistor and the second transistor. The first oxide semiconductor layer and the second oxide semiconductor layer do not overlap as seen from above the semiconductor substrate.
H10D 84/83 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors IGFET de composants à effet de champ uniquement de transistors FET à grille isolée [IGFET] uniquement
[Problem] To improve ranging accuracy. [Solution] This ranging device comprises: a light receiving unit that repeatedly receives a reflected light pulse signal obtained as a result of a light pulse signal being reflected by an object; a histogram generating unit that generates a histogram obtained by classifying the light reception frequency of the reflected light pulse signal for each unit light reception period; and a light emitting unit that repeatedly emits the light pulse signal with a pulse width that is shorter than twice the unit light reception period.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
The purpose of the present invention is to integrate a light-emitting element and a light-receiving element while suppressing thermal interference between the light-emitting element and the light-receiving element. A package (100) is provided with: a substrate (120) on which a light-receiving element (111) is mounted; a base (130) on which a light-emitting element (142) is mounted and which is separated from the substrate (120); and a connection member (125) that connects the base (130) and the substrate (120). The connection member (125) may be extended in the horizontal direction from above the substrate (120) and connected to the base (130). The connection member (125) may be formed around the light-receiving element (111) on the substrate (120). The thermal conductivity of the connection member (125) may be 0.04 W/mK or less. The connection member (125) may be connected to the side surface of the base (130).
H10F 77/00 - Détails de structure des dispositifs couverts par la présente sous-classe
H01S 5/02208 - SupportsBoîtiers caractérisés par la forme des boîtiers
H01S 5/02212 - SupportsBoîtiers caractérisés par la forme des boîtiers du type CAN, p. ex. boîtiers TO-CAN avec émission le long ou parallèlement à l’axe de symétrie
H01S 5/02218 - Matériaux du boîtierMatériaux de remplissage du boîtier
The present invention improves the image quality of an image sensor that reads out voltage that corresponds to charge. According to the present invention, a photoelectric conversion film generates charge by photoelectric conversion. A charge accumulator accumulates the charge. An amplification transistor successively outputs a reset level that corresponds to the voltage of the charge accumulator at initialization and a signal level that corresponds to the voltage of the charge accumulator after a prescribed accumulation period has passed. A connection transistor controls a conversion gain for conversion of charge to voltage to any of a plurality of values. A vertical drive unit causes the reset level to be outputted while causing the conversion gain to to be controlled to each of the plurality of values when the charge accumulator has been initialized and causes the signal level to be outputted while causing the conversion gain to be controlled to each of the plurality of values when the accumulation period has passed.
H04N 25/59 - Commande de la gamme dynamique en commandant la quantité de charge stockable dans le pixel, p. ex. en modifiant le rapport de conversion de charge de la capacité du nœud flottant
[PROBLEM] To accurately detect the speed of an object by extending a speed detection range. [SOLUTION] A speed detection device disclosed herein comprises: a plurality of first transmission antennas which are arranged in a vertical direction substantially orthogonal to a reference plane and transmit a plurality of first chirp signals; a plurality of second transmission antennas which are arranged spaced apart from the plurality of first transmission antennas along the reference plane and arranged in the vertical direction, and which transmit a plurality of second chirp signals; a plurality of reception antennas for receiving a plurality of third chirp signals from an object that reflects the plurality of first chirp signals and the plurality of second chirp signals; a signal processing unit for detecting the speed of the object on the basis of the plurality of third chirp signals received by the plurality of reception antennas; and a chirp generation unit for making the transmission order of the plurality of first chirp signals generated by the plurality of first transmission antennas different from the transmission order of the plurality of second chirp signals generated by the plurality of second transmission antennas.
G01S 13/58 - Systèmes de détermination de la vitesse ou de la trajectoireSystèmes de détermination du sens d'un mouvement
G01S 7/02 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 13/34 - Systèmes pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément
[Problem] To reliably join a first substrate, such as a wafer, and a second substrate, such as a logic chip. [Solution] This photodetection device comprises: a first substrate having a pixel region in which a plurality of photoelectric conversion elements for performing photoelectric conversion is arranged, and an out-of-pixel region disposed around the pixel region; and a second substrate to be joined to the first substrate by a first pad. The out-of-pixel region has a wiring pattern, a dummy pattern, the first pad, a second pad for connecting a bonding wire, and a shield pattern. An interval between the wiring patterns in the out-of-pixel region is smaller than at least one of an interval between the dummy patterns, an interval between the second pad and the wiring pattern, and an interval between the shield pattern and the wiring pattern.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H04N 25/70 - Architectures de capteurs SSISCircuits associés à ces dernières
H10F 30/20 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors
This information processing device comprises: a feature inference unit that infers feature information about a target user, using an AI model, on the basis of a captured image obtained by imaging the target user; an attribute inference unit that infers an attribute of the target user, using an AI model, on the basis of the feature information inferred by the feature inference unit; and a presentation processing unit that receives recommended product-related information and performs processing for presenting, to the target user, the recommended product-related information and inference basis information indicating the basis for attribute inference, the recommended product-related information being information indicating a product to be recommended to the target user or a sales location of the product and being derived on the basis of purchase history information and information indicating the attribute of the target user inferred by the attribute inference unit, the purchase history information being information indicating a product purchase history of a user and being associated with an attribute of the purchasing user.
The present disclosure relates to an electronic device and method for an Internet of Things (IoT) system, and a storage medium. The method comprises: an electronic device determining that a scenario has changed; and executing an operation to enable one or more IoT devices associated with the changed scenario to obtain application information generated on the basis of the changed scenario, wherein the application information is used for enabling the one or more IoT devices to implement functions adapted to the changed scenario. On the basis of the solution, by means of automatically enabling, on the basis of a change in scenario, an IoT device to implement functions adapted to the new scenario, the flexibility and adaptability of function deployment of the IoT device are improved.
H04L 67/12 - Protocoles spécialement adaptés aux environnements propriétaires ou de mise en réseau pour un usage spécial, p. ex. les réseaux médicaux, les réseaux de capteurs, les réseaux dans les véhicules ou les réseaux de mesure à distance
A circuitry for diagnosing external interference influencing a monitoring image captured with a monitoring camera is configured to obtain reference intensities of reference pixels of a reference marker region in a reference image captured with the monitoring camera, wherein the reference marker region is smaller than the reference image, obtain the monitoring image, determine current intensities of sample pixels of a marker region in the monitoring image, wherein the marker region corresponds to the reference marker region, and wherein the sample pixels of the marker region corresponds to the reference pixels of the reference marker region, determine a correlation between the determined current intensities and the reference intensities, and diagnose, based on the determined correlation and a predefined threshold, the monitoring image for degradation due to an external interference for evaluating the reliability of the monitoring camera as a monitoring tool.
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