A wireless electronic device can be configured to: establish a first connection with a first arbiter device on a first network and configured to communicate over a first communication interval; receive a first switch arbiter request message from a second arbiter device on a second network configured to communicate over a second communication interval desynchronized with the first communication interval; send a first switch arbiter accept message to the second arbiter device; disconnect the first connection with the first arbiter device on the first network; and establish a second connection with the second arbiter device on the second network over the second communication interval.
H04L 67/1095 - Réplication ou mise en miroir des données, p. ex. l’ordonnancement ou le transport pour la synchronisation des données entre les nœuds du réseau
2.
DEVICES AND METHODS FOR RADIO FREQUENCY FRONT END SYSTEMS
A wireless device comprising a first antenna and second antenna, a transceiver and a radio frequency front end system electrically coupled between the transceiver and the antennas. The RF front end system includes a first module operable to provide a high band transmit signal to the first antenna, receive a first high band receive signal and a first mid band receive signal from the first antenna. The first high band receive signal has a frequency range greater than that of the first mid band receive signal. The RF front end system further includes a second module operable to provide a mid band transmit signal to the second antenna, receive a second mid band receive signal and a second high band receive signal from the second antenna. The second high band receive signal has a frequency range greater than that of the second mid band receive signal.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 7/0404 - Systèmes de diversitéSystèmes à plusieurs antennes, c.-à-d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées la station mobile comprenant plusieurs antennes, p. ex. pour mettre en œuvre une diversité en voie ascendante
H04B 7/08 - Systèmes de diversitéSystèmes à plusieurs antennes, c.-à-d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station de réception
3.
CONTAMINANT REMOVAL APPARATUS AND METHODS FOR TAPE AND REEL CARRIER TAPE
A method of cleaning a tape and reel carrier tape by unspooling a tape and reel carrier tape from a first reel and onto a second reel. As the tape and reel carrier tape travels from the first reel to the second reel, the method includes passing the tape and reel carrier tape through an inner chamber of a contaminant removal apparatus, and removing contaminants from the tape and reel carrier tape by circulating air within an inner chamber of the contaminant removal apparatus.
The present disclosure relates to devices and methods for detecting and preventing occurrence of a saturation state in a power amplifier. A power amplifier module can include a power amplifier including a cascode transistor pair. The cascode transistor pair can include a first transistor and a second transistor. The power amplifier module can include a current comparator configured to compare a first base current of the first transistor and a second base current of the second transistor to obtain a comparison value. The power amplifier module can include a saturation controller configured to supply a reference signal to an impedance matching network based on the comparison value. The impedance matching network can be configured to modify a load impedance of a load line in electrical communication with the power amplifier based at least in part on the reference signal.
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c.-à-d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 3/19 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
H03F 3/21 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03G 3/30 - Commande automatique dans des amplificateurs comportant des dispositifs semi-conducteurs
A radio frequency (RF) switch arrangement that improves the voltage handling capacity of a stack of switching elements (e.g., field-effect transistors (FETs)). The RF switch arrangement can include a ground plane and a stack arranged in relation to the ground plane, the stack including a plurality of switching elements coupled in series with one another. The RF switch arrangement can also include a plurality of capacitive elements, each of the plurality of capacitive elements providing a capacitive path across respective terminals of a corresponding one of the plurality of switching elements.
H10D 84/80 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors IGFET
6.
DEVICES AND METHODS RELATED TO WIDEBAND MULTIPLEXER FOR RADIO-FREQUENCY APPLICATIONS
Devices and methods related to wideband multiplexer for radio-frequency (RF) applications. In some embodiments, a multiplexer may include a common path configured to receive a plurality of RF signals. The multiplexer may further include a first path having an output coupled to the common path and configured to provide a band-pass response for a frequency band BX. The multiplexer may further include a second path having an output coupled to the common path such that RF signals in the first and second paths are combined and routed through the common path. The second path may be configured to provide a band-stop response for the frequency band BX such that the common path includes a wideband response that includes the frequency band BX and one or more other frequency bands.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
7.
PROTECTION CIRCUITS AND RELATED METHODS AND DEVICES FOR RADIO-FREQUENCY APPLICATIONS
A radio-frequency integrated circuit can be protected by a clamp circuit configured to provide electrostatic discharge protection and surge protection for either or both of an amplifier and a related controller. The clamp circuit can include a feedback combination clamp implemented to direct a current associated with either or both of an electrostatic discharge and a surge at a first node to a second node.
H03F 1/52 - Circuits pour la protection de ces amplificateurs
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
A power management integrated circuit (PMIC) can improve the ramp up speed of a boost converter with the inclusion of a controllable switch that may modify the connection of an output capacitor to reduce the ramp time as the output voltage is ramping to a desired boost setpoint. The switch may be controlled using jump start logic to switch a first plate or terminal of the output capacitor from a ground connection to a voltage supply connection. Once a threshold voltage is reached, the first plate of the capacitor may be switched from the supply voltage to ground. In certain cases, by switching the connection of the output capacitor between ground and a supply voltage based on one or more threshold voltages or a boost setpoint, the time to ramp from an initial voltage to a desired boost setpoint may be reduced.
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
H02M 1/14 - Dispositions de réduction des ondulations d'une entrée ou d'une sortie en courant continu
H02M 3/157 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation avec commande numérique
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H03F 3/20 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
Devices and methods related to unpowered switching module. A method of providing or operating a front-end module can include providing a packaging substrate configured to receive a plurality of components, providing a transmission module implemented on the packaging substrate, the transmission module configured to amplify a radio-frequency signal, and providing a switching module implemented on the packaging substrate, the switching module including a first input terminal, a second input terminal, and an output terminal configured to output a radio-frequency component of an input signal received on the first input terminal or the second input terminal in response to the input signal including a positive direct-current voltage.
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03K 17/693 - Dispositifs de commutation comportant plusieurs bornes d'entrée et de sortie, p. ex. multiplexeurs, distributeurs
10.
SWITCH LINEARIZATION WITH ASYMMETRICAL ANTI-SERIES VARACTOR PAIR
Described herein are switches with asymmetrical anti-series varactor pairs to improve switching performance. The disclosed switches can include asymmetrical varactor pairs to reduce distortions. The asymmetry in the varactor pairs can be associated with geometry of each varactor in the pair. The disclosed switches can stack both symmetrical and asymmetrical varactor pairs. The disclosed switches with asymmetrical anti-series varactor pairs can be configured to improve both H2 and H3 simultaneously.
Power amplifier modules with controllable envelope tracking noise filters are provided herein. In certain embodiments, an envelope tracking system includes a power amplifier module and an envelope tracker that provides the power amplifier module with a power amplifier supply voltage that changes based on an envelope of a radio frequency (RF) signal amplified by the power amplifier module. The power amplifier module includes a controllable filter that filters the power amplifier supply voltage to provide flexibility in filtering envelope tracking noise.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
Distributed radio frequency (RF) communication systems for automotive are disclosed herein. In certain embodiments, an RF communication system for an automobile includes an RF module located close to an antenna to satisfy a specified output power with small insertion loss. Additionally, the baseband processor is placed remotely from the RF module in a different area of the automobile to provide a lower temperature environment. Additionally, the RF module communicates with the baseband processor in a digital format eliminating the need for higher cost cabling (for instance, due to higher noise immunity arising from using digital signaling) and using digital transfer cabling, which can already be present in the automobile for other purposes. The RF module can include an RF front-end (RFFE) and a transceiver used for providing frequency conversion, for instance, between RF and baseband.
H04B 1/3822 - Émetteurs-récepteurs, c.-à-d. dispositifs dans lesquels l'émetteur et le récepteur forment un ensemble structural et dans lesquels au moins une partie est utilisée pour des fonctions d'émission et de réception spécialement adaptés à l'utilisation dans des véhicules
Apparatus and method for tool mark free stich bonding. In some embodiments, a method for wire bonding can include feeding a wire through a capillary tip and attaching a first end of the wire to a first location, thereby forming a ball bond. The method can further include moving the capillary tip towards a second location while the wire feeds out of the capillary tip. The method can further include attaching a second end of the wire to the second location while preventing contact between the capillary tip and the second location, thereby forming a stitch bond without a tool mark at the second location.
Ultrahigh band (UHB) architectures for radio frequency (RF) front-ends are disclosed. In certain embodiments, an RF front-end for a mobile device includes a first ultrahigh band transmit/receive module connected to a first antenna, a second ultrahigh band transmit/receive module connected to the first antenna, and a first ultrahigh band receive module connected to a second antenna. The first ultrahigh band transmit/receive module is further connected to the second antenna by way of an auxiliary input of the first ultrahigh band receive module.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
A radio frequency multiplexer including a signal node to receive and/or transmit radio frequency signals, a first signal processing component to pass frequencies in a first band and reject frequencies in a second band, a second signal processing component to pass frequencies in the second band and reject frequencies in the first band, and a coupling circuit. The coupling circuit is coupled to the signal node and the first and second signal processing components and configured to couple the first signal processing component and the second signal processing component to the common signal node and in parallel with one another in a first mode, and to couple only the second signal processing component to the signal node in a second mode with the second signal processing component being coupled in series with the first signal processing component between the first signal processing component and the signal node.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04L 5/14 - Fonctionnement à double voie utilisant le même type de signal, c.-à-d. duplex
16.
INTEGRATED COMPENSATION OF AMPLITUDE AND PHASE DISTORTIONS
In some embodiments, a power amplifier circuit can include a power amplifier having an input node and an output node, a load modulation circuit coupled to the output node of the power amplifier, and a phase compensation circuit implemented in the input node side of the power amplifier. The power amplifier circuit can further include a control circuit configured to provide a control signal to the load modulation circuit based on a first current representative of a tunable reference current and a second current representative of a saturation detection current. In some embodiments, the control circuit can be further configured to provide a control signal to the phase compensation circuit based on a third current representative of a tunable reference current and the second current.
H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
H03F 3/343 - Amplificateurs de courant continu dans lesquels tous les étages sont couplés en courant continu comportant uniquement des dispositifs à semi-conducteurs
H03F 3/26 - Amplificateurs push-pullDéphaseurs pour ceux-ci
An amplifier circuit can be configured to amplify a radio-frequency signal and include an input stage and an output stage coupled to the input stage and having an output node. The amplifier circuit can further include a load modulation circuit coupled to the output node of the output stage and configured to provide variable capacitance that depends on a control voltage. The amplifier circuit can be implemented as a power amplifier circuit.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c.-à-d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
H03F 3/343 - Amplificateurs de courant continu dans lesquels tous les étages sont couplés en courant continu comportant uniquement des dispositifs à semi-conducteurs
A power amplifier circuit can include a power amplifier having an input node and an output node, and a load modulation circuit coupled to the output node of the power amplifier. The power amplifier circuit can further include a control profile configured to provide information for generating a control signal for the load modulation circuit, and a control circuit configured to generate and provide the control signal to the load modulation circuit based on the control profile. In some embodiments, the control profile can be further configured to provide information for generating a control signal for a phase compensation circuit.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c.-à-d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/343 - Amplificateurs de courant continu dans lesquels tous les étages sont couplés en courant continu comportant uniquement des dispositifs à semi-conducteurs
Baluns with integrated matching networks are provided herein. In certain embodiments, a balun structure includes a first pair of coupled lines, a second pair of coupled lines and a transmission line. Additionally, a first port of the balun is connected to a reference voltage by way of a first line of the first pair of coupled lines, the transmission line, and a first line of the second pair of coupled lines. Furthermore, a second port of the balun is connected to the reference voltage by way of a second line of the first pair of coupled lines, while a third port of the balun is connected to the reference voltage by way of a second line of the second pair of coupled lines. The first port serves as an unbalanced signal terminal, while the second port and the third port serve as positive and negative signal terminals.
Aspects of this disclosure relate to an acoustic wave filter that includes a shunt a bulk acoustic wave resonator having a plurality of resonant frequencies that impact a passband of the acoustic wave filter. Related bulk acoustic wave resonators, radio frequency modules, wireless communication devices, and methods of filtering radio frequency signals are disclosed.
A method for calibrating an isolator product includes receiving a calibration signal on a differential pair of nodes of a receiver signal path of a first integrated circuit die of the isolator product. The method includes generating a diagnostic signal having a level corresponding to an average amplitude of the calibration signal on the differential pair of nodes. The method includes configuring a programmable receiver signal path based on the diagnostic signal. Generating the diagnostic signal may include providing an analog signal based on a full-wave rectified version of the calibration signal on the differential pair of nodes. Generating the diagnostic signal may include converting the analog signal to a digital signal.
Aspects of this disclosure relate to a tunable filter with tunable rejection. The tunable filter includes mutually coupled inductors and a tunable impedance circuit electrically connected to at least one of the mutually coupled inductors. The tunable impedance circuit is configured to adjust at least two notches in a frequency response of the tunable filter by changing a state of a switch. The tunable filter can filter a radio frequency signal. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed.
A switching circuit can include a first cellular filter, a second cellular filter, a first Wi-Fi filter, a second Wi-Fi filter and a plurality of switches. The first cellular filter can filter a first cellular frequency band. The second cellular filter can filter a second cellular frequency band. The first Wi-Fi filter can filter a first Wi-Fi frequency band. The first Wi-Fi frequency band is positioned between the first and the second cellular frequency bands. The second Wi-Fi filter can filter a second Wi-Fi frequency band. The second Wi-Fi frequency band is positioned between the second cellular frequency band and the first Wi-Fi frequency band. A plurality of switches can route signal from an antenna through the first cellular filter and the second Wi-Fi filter or route the signal from the antenna through the second cellular filter and the first Wi-Fi filter.
A system for processing audio data is disclosed. An example system includes a plurality of input sample rate converters and a plurality of output sample rate converters; an isochronous data interface configured to receive and/or output audio data; a plurality of programmable rate generators configured to trigger a sequence of audio data transfers between the plurality of input sample rate converters and/or the plurality of output sample rate converters and the isochronous data interface; a plurality of transaction control registers configured to control routing for each audio data transfer, the plurality of transaction control registers controlling which input sample rate converter of the plurality of input sample rate converters an audio data transfer is to be transferred from for received audio data; and a plurality of output control registers configured to control write enables of the plurality of output sample rate converters.
G10L 19/008 - Codage ou décodage du signal audio multi-canal utilisant la corrélation inter-canaux pour réduire la redondance, p. ex. stéréo combinée, codage d’intensité ou matriçage
25.
SYSTEM AND METHOD FOR ROUTING AUDIO SIGNALS WITH HEADER DATA
A system for processing audio data includes an isochronous data interface to output a first stream of audio data, a plurality of output sample rate converters to output a second stream of audio data, a plurality of transaction control registers to control routing of the first stream of audio data between the isochronous data interface and an output sample rate converter of the plurality of output sample rate converters, a processor to remove first header data from the first stream of audio data output from the isochronous data interface and to write the first header data to a circular buffer, a first audio header register to control forwarding of the first header data for prepending to the second stream of audio data output by the plurality of output sample rate converters, and a plurality of output control registers to control write enables of the plurality of output sample rate converters.
A method for protecting a system including a driver integrated circuit includes receiving a driver input signal. The method includes driving an output signal externally to the driver integrated circuit. The output signal is driven based on the driver input signal and an indication of a delay between receipt of an edge of the driver input signal and arrival of a corresponding edge of the output signal at an output node coupled to a terminal of the driver integrated circuit.
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
H03K 17/08 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension
H03K 17/14 - Modifications pour compenser les variations de valeurs physiques, p. ex. de la température
H03K 17/284 - Modifications pour introduire un retard avant commutation dans les commutateurs à transistors à effet de champ
27.
DEVICES AND METHODS RELATED TO METALLIZATION OF CERAMIC SUBSTRATES FOR SHIELDING APPLICATIONS
Devices and methods related to metallization of ceramic substrates for shielding applications. In some embodiments, a ceramic assembly includes a plurality of layers, the assembly including a boundary between a first region and a second region, the assembly further including a selected layer having a plurality of conductive features along the boundary, each conductive feature extending into the first region and the second region such that when the first region and the second region are separated to form their respective side walls, each side wall includes exposed portions of the conductive features capable of forming electrical connection with a conductive shielding layer.
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/552 - Protection contre les radiations, p. ex. la lumière
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
H05K 3/12 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de l'impression pour appliquer le matériau conducteur
H05K 3/22 - Traitement secondaire des circuits imprimés
H05K 3/40 - Fabrication d'éléments imprimés destinés à réaliser des connexions électriques avec ou entre des circuits imprimés
In some embodiments, a compensated power detector can include a power detector that includes a first detection cell having a bias input and an output, and a second detection cell having a signal input, a bias input and an output. The power detector can further include an error amplifier having a first input coupled to the output of the first detection cell, and a second input for receiving a reference voltage. The error amplifier can be configured to provide an output voltage to each of the bias inputs of the first and second detection cells, such that an output of the second detection cell is representative of power of a radio-frequency signal received at the signal input with an adjustment for one or more non-signal effects as measured by the first detection cell and the error amplifier.
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
Systems, methods, and devices are disclosed for performing a semiconductor processing operation. In some embodiments, a system for performing a semiconductor processing operation can include a wire-bonding machine with a capillary tool, the wire-bonding machine configured to etch bulk contamination at one or more locations on a semiconductor device with the capillary tool, followed by application of plasma to the semiconductor device to remove residual contamination.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
Asymmetric Doherty power amplifiers are disclosed. In certain embodiments, a Doherty power amplifier includes a carrier amplifier that generates a radio frequency carrier signal based on amplifying a radio frequency input signal, a peaking amplifier that generates a radio frequency peaking signal based on amplifying the radio frequency input signal, and a phase shifting and combining circuit configured to combine the radio frequency carrier signal and the radio frequency peaking signal to generate a radio frequency output signal. The peaking amplifier has an amplifier size that is smaller than an amplifier size of the carrier amplifier.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
A bipolar junction transistor has a collector over a substrate and a multi-layer base structure over the collector, and an emitter over the base structure. The multi-layer base structure includes a first layer having a first III-V semiconductor alloy and a second layer having a second III-V semiconductor alloy having a different composition of elements than the first III-V semiconductor alloy. The second layer has a narrower bandgap than the first layer. The first layer is positioned between the collector and the second layer.
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
A bipolar junction transistor has a collector over a substrate and a base structure over the collector, the base including a III-V ternary semiconductor alloy, the base having a base contact formed thereon. An emitter is over the base structure, and a ledge between the emitter structure and the base contact is 0.3 μm or less.
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
An acoustic wave filter module has a piezoelectric substrate mounted on a metal plate, with a surface acoustic wave filter mounted on the piezoelectric substrate and coupled between a first input and an output of the acoustic wave filter module. A capacitor is mounted on the piezoelectric substrate and two inductors are formed on the metal plate. The two inductors and the capacitor electrically implement a π-type high pass filter coupled between the surface acoustic wave filter and an output of the acoustic wave filter module.
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/145 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
Systems of the present disclosure reduce end-to-end latency within a signal path of a wireless audio system by using a host synchronized link that bases synchronization on a start of frame signal from the host. The host synchronized link may be included in a transmitter. The use of the host-issued start of frame signal (e.g., from a USB controller) enables bypassing or omission of a sample rate converter. By bypassing the sample rate converter, the latency associated with the sample rate converter can be eliminated from the audio signal path.
Systems of the present disclosure reduce end-to-end latency within a signal path of a wireless audio system by using a host synchronized link that bases synchronization on a start of frame signal from the host. The host synchronized link may be included in a receiver. The use of the host-issued start of frame signal (e.g., from a USB controller) enables bypassing or omission of a sample rate converter. By bypassing the sample rate converter, the latency associated with the sample rate converter can be eliminated from the audio signal path.
A bipolar junction transistor has a collector over a substrate, a base over the collector, and an emitter over the base. The base includes a III-V ternary semiconductor alloy including first, second, and third elements, and having a narrower bandgap than a binary semiconductor alloy including only the first and second elements. At least a portion of the base has a differential concentration of the third element such that a concentration of the third element at a first location in the base is greater than at a second location in the base, the second location between the first location and the collector.
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/205 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV comprenant plusieurs composés dans différentes régions semi-conductrices
37.
BIPOLAR JUNCTION TRANSISTOR WITH NARROW BANDGAP BASE
A bipolar junction transistor a base over a collector, the base including a III-V ternary semiconductor alloy including first, second, and third elements. The LI-V ternary semiconductor alloy has a narrower bandgap than a binary semiconductor alloy including only the first and second elements. A ledge between an emitter and a base contact being 0.5 μm or less.
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/205 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV comprenant plusieurs composés dans différentes régions semi-conductrices
38.
ACOUSTIC WAVE FILTER WITH BULK ACOUSTIC WAVE DEVICES HAVING MULTIPLE RAISED FRAME STRUCTURES
An acoustic wave filter with different bulk acoustic wave devices is disclosed. The filter includes a first bulk acoustic wave resonator and a second bulk acoustic wave resonator. The first bulk acoustic wave resonator includes a first raised frame structure. The first raised frame structure is a multi-layer raised frame structure. The second bulk acoustic wave resonator includes a second raised frame structure. The first raised frame structure has at least one more raised frame layer than the second raised frame structure.
A time error vector is determined using pairs of two closest points of input-referred noise data that straddle respective crossing times indicating when a clock signal representation crosses a threshold value, a slew rate of the clock signal representation, and the crossing times. A system filter is applied to the time error vector in the frequency domain. A first RMS value is determined indicating a jitter value present in the filtered time error vector. A raw clock signal time error vector of the clock signal under test is generated, the system filter is applied to the raw clock signal time error vector in the frequency domain, and a second RMS value indicating a jitter content of the filtered raw clock signal time error vector is determined. The second RMS value is corrected using the first RMS value to thereby generate a jitter measurement compensated for input-referred noise.
A method for fabricating a surface-mountable device can include forming or providing an electrical element, and forming a body to support the electrical element, such that the body has a rectangular cuboid shape with a length, a width, and a height that is greater than the width. The body can include a base plane configured to allow surface mounting of the device. The method can further include forming first and second terminals on the base plane, such that the first and second terminals are electrically connected to the electrical element.
H01C 1/148 - Bornes ou points de prise spécialement adaptés aux résistancesDispositions de bornes ou points de prise sur les résistances les bornes enveloppant ou entourant l'élément résistif
H01F 17/00 - Inductances fixes du type pour signaux
H01G 2/06 - Dispositifs de montage spécialement adaptés pour le montage sur un support de circuit imprimé
H01G 4/012 - Forme des électrodes non autoporteuses
H01G 4/232 - Bornes pour la connexion électrique d'au moins deux couches d'un condensateur à empilement ou à enroulement
An acoustic wave device can include a quartz substrate having a first surface, and a piezoelectric plate formed from LiTaO3 or LiNbO3 and having a first surface configured to support a surface acoustic wave and a second surface in engagement with the first surface of the quartz substrate. The second surface of the piezoelectric plate can be a minus surface resulting from crystal structure orientation of the piezoelectric plate. The acoustic wave device can further include an interdigital transducer electrode formed on the first surface of the piezoelectric plate and configured to provide transducer functionality associated with the surface acoustic wave.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
H03H 9/145 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/25 - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
42.
ACOUSTIC WAVE FILTER WITH LOW NOISE AMPLIFIER AND BALUN
A front-end module may include an acoustic wave filter with a first and second interdigital transducer electrode, and a low noise amplifier (LNA) that converts a differential input to a single-ended output with respect to ground. The first interdigital transducer electrode may be single-ended with a first input bus bar configured to receive an input signal and a second input bus bar connected to ground. The second interdigital transducer electrode may be differential with a first output bus bar connected to a first output terminal and a second output bus bar connected to a second output terminal. The LNA may have a differential input connected to the acoustic wave filter, a first input transistor that receives a first signal from the first output terminal of the acoustic wave filter, and a second input transistor that receives a second signal from the second output terminal of the acoustic wave filter.
An RF front-end module including a first transceiver unit, a second transceiver unit, a first antenna, a second antenna, a first diplexer, and a second diplexer. The first transceiver unit has a first transmitter and a first receiver and is configured to transmit at a first LTE 4G band, and the second transceiver unit has a second transmitter and a second receiver and is configured to transmit at a first new radio 5G (NR) band. The first antenna is connected via the first diplexer to the first transmitter and the first receiver, the first receiver being configured to receive at the first new radio 5G band, and the second antenna is connected via the second diplexer to the second transmitter and the second receiver, the second receiver being configured to receive at the first LTE 4G band.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 1/401 - Circuits pour le choix ou l’indication du mode de fonctionnement
H04B 1/52 - Dispositions hybrides, c.-à-d. dispositions pour la transition d’une transmission bilatérale sur une voie à une transmission unidirectionnelle sur chacune des deux voies ou vice versa
H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
H03H 9/72 - Réseaux utilisant des ondes acoustiques de surface
Acoustic wave devices and related methods. In some embodiments, a method for fabricating an acoustic wave device can include attaching a first surface of a piezoelectric layer, such as a LiTaO3 or LiNbO3 layer, to a handling substrate, and performing a thinning operation on the piezoelectric layer to expose a second surface of a reduced-thickness piezoelectric layer attached to the handling substrate. The method can further include bonding the second surface of the reduced-thickness piezoelectric layer to a first surface of a permanent substrate, and removing the handling substrate from the reduced-thickness piezoelectric layer. The handling substrate can be, for example, a silicon substrate, and the permanent substrate can be, for example, a quartz substrate.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
H03H 9/145 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/25 - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
45.
RADIO-FREQUENCY AMPLIFIER HAVING REDUCED GAIN VARIATION
A radio-frequency amplifier can have an input stage that includes an amplifying transistor having an input node and an output node, such that a signal at the input node has a first power level and an amplified signal at the output node has a second power level. The radio-frequency amplifier can further include a bias circuit configured to provide a bias signal to the amplifying transistor, and a feedback circuit that couples the output node of the amplifying transistor to the input node of the amplifying transistor. The feedback circuit can include a resistance and a capacitance arranged in series. The radio-frequency amplifier can further include a gain compensation circuit implemented relative to the input stage such that the second power level is compensated for a variation in temperature associated with the radio-frequency amplifier.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
Systems, methods, and devices relate to tunable circuits for multimode power amplification. For example, a variable-gain amplification system can include an amplifier configured to provide an amplified signal and to selectively operate in at least a first gain mode and a second gain mode. The variable-gain amplification system can also include a tunable circuit configured to receive the amplified signal from the amplifier and to provide an output signal. The tunable circuit can be configured to implement a first turn ratio for the first gain mode and a second turn ratio for the second gain mode.
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/72 - Amplificateurs commandés, c.-à-d. amplificateurs mis en service ou hors service au moyen d'un signal de commande
Aspects of the disclosure include a method of biasing a power amplifier including applying a drain voltage to a drain of the power amplifier, determining, based on the drain voltage, a range of acceptable gate voltages to apply to the power amplifier, determining a first optimal gate voltage within the range of acceptable gate voltages, determining a second optimal gate voltage within the range of acceptable gate voltages, selecting one of the first optimal gate voltage or the second optimal gate voltage to apply to the power amplifier, and applying either the first optimal gate voltage or the second optimal gate voltage to the gate of the power amplifier.
Examples of the disclosure include a power amplifier comprising an input to receive an input signal, an output to provide an amplified output signal, a gate voltage bias node to receive a gate voltage bias signal, a first amplifier device having a first gate connection coupled to the gate voltage bias node and configured to receive the gate voltage bias signal, and a second amplifier device having a second gate connection coupled to the gate voltage bias node and configured to receive the gate voltage bias signal.
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
Signal isolation for module with ball grid array. In some embodiments, a packaged module can include a packaging substrate having an underside, and an arrangement of conductive features implemented on the underside of the packaging substrate to allow the packaged module to be capable of being mounted on a circuit board. The arrangement of conductive features can include a signal feature implemented at a first region and configured for passing of a signal, and one or more shielding features placed at a selected location relative to the signal feature to provide an enhanced isolation between the signal feature and a second region of the underside of the packaging substrate.
H01L 23/552 - Protection contre les radiations, p. ex. la lumière
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
Devices and methods related to voltage supply system with boost converter and charge pump. According to certain aspects, a method for operating a voltage supply system can include: generating a first output voltage with a boost converter based on an input voltage when in a first mode; delivering the input voltage as a second output voltage when in a second mode; and generating a third output voltage with a charge pump based on the input voltage when in a third mode.
G05F 5/00 - Systèmes de régulation de variables électriques par détection des écarts du signal électrique à l'entrée du système et par commande par ces écarts d'un dispositif intérieur au système pour obtenir un signal de sortie régulé
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p. ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
Methods related to radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a method for fabricating an RF switching device can include: providing a semiconductor substrate; forming a plurality of field-effect transistors (FETs) on the semiconductor substrate such that the FETs have a non-uniform distribution of a parameter; and connecting the FETs to form a stack, such that the non-uniform distribution results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.
H01L 21/84 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant autre chose qu'un corps semi-conducteur, p.ex. étant un corps isolant
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H03K 17/081 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande
According to at least one aspect of the present disclosure a multipath system is provided, the system comprising: an input configured to receive an input signal; an output configured to provide an output signal; at least one summing node coupled to the output; and one or more multipath units coupled to the input and to the at least one summing node, the one or more multipath units configured to apply a delay to the input signal and to apply a gain to the input signal using one or more coefficients shaped according to a spectrum.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 1/12 - Montages de neutralisation, d'équilibrage ou de compensation
Systems and methods for differential antenna driving are provided. In one aspect, a front end system includes at least one power amplifier configured to receive a first transmit radio frequency signal from a baseband processor, amplify the first transmit radio frequency signal, and output the amplified first transmit radio frequency signal. The front end system further includes at least one balun configured to receive the amplified first transmit radio frequency signal. The at least one balun includes a positive output coupled to a first monopole of at least one antenna and a negative output coupled to a second monopole of the at least one antenna.
H01Q 21/26 - Antennes tourniquet ou similaires comportant des dispositions de trois éléments ou plus allongés disposés radialement et symétriquement dans un plan horizontal par rapport à un centre commun
H01Q 1/24 - SupportsMoyens de montage par association structurale avec d'autres équipements ou objets avec appareil récepteur
H01Q 21/24 - Combinaisons d'unités d'antennes polarisées dans des directions différentes pour émettre ou recevoir des ondes polarisées circulairement ou elliptiquement ou des ondes polarisées linéairement dans n'importe quelle direction
H01Q 23/00 - Antennes comportant des circuits ou des éléments de circuit actifs qui leur sont intégrés ou liés
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
Systems and methods for high power uplink transmission are disclosed. In one aspect, a mobile device includes an antenna configured to transmit radio frequency signals to a base station via an uplink and receive radio frequency signals from the base station via a downlink and a front end system coupled to the antenna. The front end system is configured to transmit and receive the radio frequency signals from the antenna, and duplex the radio frequency signals via frequency division duplexing. The front end system is further configured to transmit data on the uplink at a first power level that is higher than a predetermined level and at a finite duty cycle.
A system for fault detection in a circuit. The system includes an input configured to receive an input signal, an output, a reference node, a first detector, and a second detector. The first detector is configured to be in an on state when the second detector is in an off state, and to be in an off state when the second detector is in an on state. A first switching device is coupled between the input and the output and configured allow current to pass from input to output in a first state, and to prevent current from passing from input to output in a second state.
An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO2), a piezoelectric thin film 12 including LiTaO3 crystal or LiNbO3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.
In some embodiments, an amplifier system can include an amplifier circuit having first and second amplifiers configured to amplify respective first and second portions of an input signal. Each of the first and second amplifiers can include a cascode stage with input and output transistors arranged in a cascode configuration. The amplifier system can further include an envelope tracking bias circuit coupled to the amplifier circuit and configured to provide a bias signal to the output transistor of the cascode stage of at least one of the first and second amplifiers. The amplifier system can further include a supply circuit configured to provide a non-envelope tracking supply voltage to the output transistor of the cascode stage of the at least one of the first and second amplifiers.
H03F 3/60 - Amplificateurs dans lesquels les réseaux de couplage ont des constantes réparties, p. ex. comportant des résonateurs de guides d'ondes
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
58.
ACOUSTIC WAVE RESONATOR WITH PATTERNED CONDUCTIVE LAYER FOR TRANSVERSE MODE SUPPRESSION
Aspects of this disclosure relate to an acoustic wave resonator with a patterned conductive layer. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode can include a bus bar and fingers extending from the bus bar. The fingers can each include an edge portion and a body portion. The patterned conductive layer can overlap the edge portions of the fingers. The patterned conductive layer can conductive portions that are spaced apart from each other. A portion of the temperature compensation layer can be positioned between the patterned conductive layer and the interdigital transducer electrode.
H03H 9/25 - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 3/10 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface pour obtenir une fréquence ou un coefficient de température désiré
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 9/145 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
H04B 1/38 - Émetteurs-récepteurs, c.-à-d. dispositifs dans lesquels l'émetteur et le récepteur forment un ensemble structural et dans lesquels au moins une partie est utilisée pour des fonctions d'émission et de réception
A tape and reel machine vision inspection system may include: a camera; a lens; one or more lights; a printed circuit board interface configured to interface the tape and reel machine vision inspection system with a tape and reel machine configured to process a plurality of components in a packaging process; a frame grabber; and a computing device including a processor configured to: determine one or more templates for inspecting the plurality of components processed by the tape and reel machine; obtain at least one image of a component processed by the tape and reel machine using the camera and the lens; compare the image of the component processed by the tape and reel machine with the one or more templates to determine whether the image of the component and the one or more templates match within a specified threshold; and determine whether the component passes or fails inspection.
A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHZ. Other embodiments of the module are provided along with related methods and components thereof.
H03F 3/213 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 21/56 - Encapsulations, p. ex. couches d’encapsulation, revêtements
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
H01L 21/8252 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie III-V
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/552 - Protection contre les radiations, p. ex. la lumière
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/205 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV comprenant plusieurs composés dans différentes régions semi-conductrices
H01L 29/36 - Corps semi-conducteurs caractérisés par la concentration ou la distribution des impuretés
H01L 29/66 - Types de dispositifs semi-conducteurs
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 3/187 - Amplificateurs à basse fréquence, p. ex. préamplificateurs à fréquence musicale comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/19 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/21 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/347 - Amplificateurs de courant continu dans lesquels tous les étages sont couplés en courant continu comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
Antenna arrays with separate resonances and termination networks for multiple millimeter wave frequency bands are provided herein. In certain embodiments, an antenna array includes a first antenna element that receives the first radio frequency transmit signal at an input. The first antenna element has a first resonant mode and a second resonant mode. The antenna array further includes a first termination network connected to the input of the first antenna element and a second termination network connected to the input of the first antenna element.
A system delays input clock signals using time-to-digital converters (TDCs) to convert edges or the clock signals to digital values and storing the digital values in a memory. The digital values are retrieved from the memory based on a desired delay. A time counter used by the TDCs to determine the edges is also used determine the delay. The accuracy and range of the delay depends on the time counter and size of the memory.
G04F 10/00 - Appareils pour mesurer des intervalles de temps inconnus par des moyens électriques
G06F 1/08 - Générateurs d'horloge ayant une fréquence de base modifiable ou programmable
H03K 5/00 - Transformation d'impulsions non couvertes par l'un des autres groupes principaux de la présente sous-classe
H03L 7/081 - Détails de la boucle verrouillée en phase avec un déphaseur commandé additionnel
H03L 7/093 - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence, y compris le filtrage ou l'amplification de son signal de sortie utilisant des caractéristiques de filtrage ou d'amplification particulières dans la boucle
Fuse programming circuits, devices and methods. In some embodiments, a fuse circuit can include a fuse pad configured to receive a voltage, a fuse having a first end coupled to the fuse pad and a second end coupled to a switching element configured to enable a current to pass from the fuse pad to a ground potential.
H01H 85/46 - Circuits non adaptés à une application particulière du dispositif de protection
H01H 85/00 - Dispositifs de protection dans lesquels le courant circule à travers un organe en matière fusible et est interrompu par déplacement de la matière fusible lorsqu'il devient excessif
H01H 85/02 - Dispositifs de protection dans lesquels le courant circule à travers un organe en matière fusible et est interrompu par déplacement de la matière fusible lorsqu'il devient excessif Détails
H01H 85/143 - Contacts électriquesFixation d'éléments fusibles sur de tels contacts
H01L 23/62 - Protection contre l'excès de courant ou la surcharge, p. ex. fusibles, shunts
A headset for generating a non-delayed sidetone for a user, the headset including an input for receiving a playback signal, the playback signal including respective delayed audio signals from one or more users mixed together as the playback signal, one or more users including a first user and the mixed audio signal from the first user being a delayed input audio signal; a signal remover configured to generate a first processed signal by removing the delayed audio signal for the first user from the playback signal; and a signal mixer coupled to the signal remover, the signal mixer configured to: generate a second processed signal by mixing the first processed signal with a non-delayed input audio signal from the first user, and output the second processed signal, the non-delayed input audio signal acting as a sidetone for the first user.
G10K 11/178 - Procédés ou dispositifs de protection contre le bruit ou les autres ondes acoustiques ou pour amortir ceux-ci, en général utilisant des effets d'interférenceMasquage du son par régénération électro-acoustique en opposition de phase des ondes acoustiques originales
An audio processor for generating a non-delayed sidetone for a user, the audio processor including an input for receiving a playback signal, the playback signal including respective delayed audio signals from one or more users mixed together as the playback signal, the one or more users including a first user and the mixed audio signal from the first user being a delayed input audio signal; a signal remover configured to generate a first processed signal by removing the delayed audio signal for the first user from the playback signal; and a signal mixer coupled to the signal remover, the signal mixer configured to: generate a second processed signal by mixing the first processed signal with a non-delayed input audio signal from the first user, and output the second processed signal, the non-delayed input audio signal acting as a sidetone for the first user.
G10L 21/0364 - Amélioration de l'intelligibilité de la parole, p. ex. réduction de bruit ou annulation d'écho en changeant l’amplitude pour améliorer l'intelligibilité
Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H03K 17/10 - Modifications pour augmenter la tension commutée maximale admissible
H03K 17/12 - Modifications pour augmenter le courant commuté maximal admissible
H03K 17/693 - Dispositifs de commutation comportant plusieurs bornes d'entrée et de sortie, p. ex. multiplexeurs, distributeurs
H04B 1/38 - Émetteurs-récepteurs, c.-à-d. dispositifs dans lesquels l'émetteur et le récepteur forment un ensemble structural et dans lesquels au moins une partie est utilisée pour des fonctions d'émission et de réception
Time of day (ToD) registers provide respective virtual ToDs corresponding to the occurrence of edges of input clock signals being supplied to an integrated circuit. The integrated circuit generates a heartbeat clock signal having a frequency higher than a SYNC signal and time stamps the heartbeat clock signal to generate heartbeat time stamps. The heartbeat time stamps are used along with the time stamps of the input clock signals to determine the time of day corresponding to occurrences of edges of the input clock signals.
In some embodiments, an antenna device can include a substrate, a ground plane, and first and second antenna elements each having a shape selected from an F-shape and a P-shape. Each antenna element can include a feed point connectable to an antenna circuit and a grounding point electrically connected to the ground plane.
Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In particular, a two-phase material can form based on the rutile phase of titanium oxide along with a spinel structure of ZnAl2O4. This material can have a dielectric constant below 15 which is simultaneously temperature stable.
C04B 35/478 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de titane ou de titanates à base de titanates à base de titanates d'aluminium
C04B 35/44 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'aluminates
C04B 35/626 - Préparation ou traitement des poudres individuellement ou par fournées
09 - Appareils et instruments scientifiques et électriques
Produits et services
(1) Semiconductor components with electromagnetic shielding in the form of a metallic coating covering at least some portion of a packaging material encapsulating at least one semiconductor element where the packaging material may include wire-bonding fencing that electrically connects to the metallic coating to form a Faraday cage to prevent electromagnetic energy from escaping outside or entering into a respective semiconductor component thereby formed
71.
MULTI-INPUT AMPLIFIER WITH DEGENERATION SWITCHING WITHOUT THE USE OF SWITCHES
Disclosed herein are signal amplifiers that include a plurality of switchable amplifier architectures so that particular gain modes can use dedicated amplifier architectures to provide desired characteristics for those gain modes, such as low noise figure or high linearity. The disclosed signal amplifier architectures provide tailored impedances using a degeneration block or matrix without using switches in the degeneration switching block. The disclosed signal amplifier architectures provide a plurality of gain modes where different gain modes use different paths through the amplifier architecture. Switches that are used to select the path through the amplifier architecture also provide targeted impedances in a degeneration block or matrix. The switches that select the gain path are provided in the amplifier architecture and are thus not needed or used in the degeneration block, thereby reducing the size of the package for the amplifier architecture.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Semiconductor components with electromagnetic shielding in the form of a metallic coating covering at least some portion of a packaging material encapsulating at least one semiconductor element where the packaging material may include wire-bonding fencing that electrically connects to the metallic coating to form a Faraday cage to prevent electromagnetic energy from escaping outside or entering into a respective semiconductor component thereby formed.
09 - Appareils et instruments scientifiques et électriques
38 - Services de télécommunications
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
(1) Semiconductor devices; semiconductor devices for use in telecommunications equipment; electrical and electronic components; integrated circuits; chipsets; circuit boards; semiconductor and electronic devices for use in telecommunications equipment; apparatus and devices for conducting, switching, transforming, accumulating, regulating or controlling electricity; radio frequency and baseband wireless communication equipment; multichip modules which include radio transmitters, radio receivers, or transceivers; front end modules for conditioning radio frequency signals; electrical, electronic, optoelectronic, and microelectronic components for telecommunications, and radar equipment; electrical, electronic, optoelectronic, and microelectronic components for sensor sub-systems comprising sensors, signal conditioning devices and signal conditioning circuits, microcontrollers, communication modules and power supplies; antenna tuners; communication chipsets; communication modules; antenna elements; sensors and sensor sub-systems; sensor sub-systems comprising sensors, signal conditioning devices and signal conditioning circuits, microcontrollers, communication modules and power supplies; firmware and software embedded with or used in the control of semiconductor devices; circuits for use in evaluating or demonstrating semiconductors and semiconductor devices; acoustic filters and acoustic filter assemblies; radio frequency filters; electroacoustic filters; piezoelectric filters; piezoelectric transducers and sensors; surface acoustic wave (SAW) filters; bulk acoustic wave (BAW) filters; film bulk acoustic resonator (FBAR) filters; electrical, electronic, optoelectronic, and microelectronic components, and semiconductor and electronic devices, for communications, navigation, surveillance, and for electronic interfaces, power supply and application interfaces; optocouplers; semiconductor and electronic devices for use in audio signal processing equipment; semiconductor devices, electrical and electronic components, integrated circuits, circuit boards, chipsets, system on a chip (SoC), software and firmware for wireless communications and for audio signal processing; firmware for audio, acoustic, and other signal processing and calibration routines; microelectronic components for audio and data devices; analysis and calibration systems; apparatus and devices for calibrating and analyzing the performance of semiconductor devices, integrated circuits, chipsets, circuit boards, modules, electrical components, electronic components, optoelectronic components, microelectronic components, and radio frequency and baseband wireless communications equipment; digital signal processing firmware, software, and hardware; downloadable computer software incorporating digital signal processing algorithms in the field of audio signal manipulation; software and processors in the form of embedded integrated circuit packages with signal processing algorithms used for AI noise suppression, active noise cancellation, acoustic on-ear detection, beamforming for headphones, and acoustic echo cancellation; timing and signal integrity computer hardware, namely, oscillators, clock generators, clock buffers, network synchronizers, jitter attenuators, transceivers, clock multipliers, radio frequency synthesizers; clock generation and timing-related electronic components for use in electronic systems; electrical and electronic components, integrated circuits, semiconductor devices, circuit boards, software and firmware for clock generation and timing-related components and systems; power management, regulation, isolation, and protection components for use in electronic systems; electrical and electronic components, integrated circuits, and semiconductor devices for power management, regulation, isolation, and protection; electrical and electronic communications components and devices for use in telecommunications systems; integrated circuits, semiconductor devices, chipsets, and multi-chip modules for use in telecommunications systems; parts and fittings for the aforementioned goods; instruction manuals, datasheets, and applications notes provided in connection with the foregoing (1) Information, advisory and consultancy services for providing semi-conductor component parts for use in the fields of telecommunications, communications, navigation, surveillance, microelectronics, optoelectronics, acoustic filters, semiconductors, clock generation and timing, power management, power regulation, power isolation, power protection, and audio signal processing technology; transmitting and disseminating information and data providing semi-conductor component parts for use in the fields of telecommunications, communications, navigation, surveillance, microelectronics, optoelectronics, acoustic filters, semiconductors, clock generation and timing, power management, power regulation, power isolation, power protection, and audio signal processing technology via computer networks and the internet
(2) Custom manufacture and assembly of apparatus and devices for conducting, switching, transforming, accumulating, regulating or controlling electricity; custom manufacture and assembly of radio frequency and baseband wireless communications equipment; custom manufacture and assembly of semiconductor devices, integrated circuits, chipsets, circuit boards, optocouplers, acoustic filters and acoustic filter assemblies, digital signal processing algorithms, digital signal processing firmware, software, and hardware, clock generation and timing-related electronic components, communication components, power management, regulation, isolation, and protection components and electrical, electronic, optoelectronic and microelectronic components; custom manufacture and assembly of electrical, electronic, optoelectronic and microelectronic components for telecommunications, communications, navigation, surveillance, audio signal processing, and radar equipment; custom manufacture and assembly of radio frequency modules; custom manufacture and assembly of apparatus and devices for calibrating and analyzing the performance of semiconductor devices, integrated circuits, chipsets, circuit boards, modules, electrical components, electronic components, optoelectronic components, microelectronic components, and radio frequency and baseband wireless communications equipment; information, advisory and consultancy services relating to the aforesaid
(3) Product research and development; design and testing for new product development; engineering services; custom design, engineering and development of apparatus and devices for conducting, switching, transforming, accumulating, regulating or controlling electricity; custom design, engineering and development of radio frequency and baseband wireless communications equipment; custom design, engineering, development, research, technology consultation, analysis, and testing in the fields of telecommunications, communications, navigation, surveillance, and audio signal processing technology; custom design, engineering and development of semiconductor devices, integrated circuits, chipsets, circuit boards, optocouplers, acoustic filters and acoustic filter assemblies, digital signal processing algorithms, clock generation and timing-related electronic components, communication components, power management, regulation, isolation, and protection components, and electrical, electronic, optoelectronic and microelectronic components; custom design, engineering and development of radio frequency modules; custom design, engineering and development of apparatus and devices for calibrating and analyzing the performance of semiconductor devices, integrated circuits, chipsets, circuit boards, modules, electrical components, electronic components, optoelectronic components, microelectronic components, and radio frequency and baseband wireless communications equipment; design and development of firmware and software embedded with or used in the control of semiconductor devices; design and development of software and firmware for wireless communications, audio signal processing, calibration routines; design and development of software and firmware for clock generation and timing-related components and systems; information, advisory and consultancy services relating to the aforesaid
09 - Appareils et instruments scientifiques et électriques
Produits et services
(1) Semiconductor devices; semiconductor devices for use in telecommunications equipment; electrical and electronic components; integrated circuits; chipsets; circuit boards; semiconductor and electronic devices for use in telecommunications equipment; apparatus and devices for conducting, switching, transforming, accumulating, regulating or controlling electricity; radio frequency and baseband wireless communication equipment; multichip modules which include radio transmitters, radio receivers, or transceivers; front end modules for conditioning radio frequency signals; electrical, electronic, optoelectronic, and microelectronic components for telecommunications, and radar equipment; electrical, electronic, optoelectronic, and microelectronic components for sensor sub-systems comprising sensors, signal conditioning devices and signal conditioning circuits, microcontrollers, communication modules and power supplies; antenna tuners; communication chipsets; communication modules; antenna elements; sensors and sensor sub-systems; sensor sub-systems comprising sensors, signal conditioning devices and signal conditioning circuits, microcontrollers, communication modules and power supplies; firmware and software embedded with or used in the control of semiconductor devices; circuits for use in evaluating or demonstrating semiconductors and semiconductor devices; acoustic filters and acoustic filter assemblies; radio frequency filters; electroacoustic filters; piezoelectric filters; piezoelectric transducers and sensors; surface acoustic wave (SAW) filters; bulk acoustic wave (BAW) filters; film bulk acoustic resonator (FBAR) filters; electrical, electronic, optoelectronic, and microelectronic components, and semiconductor and electronic devices, for communications, navigation, surveillance, and for electronic interfaces, power supply and application interfaces; optocouplers; semiconductor and electronic devices for use in audio signal processing equipment; semiconductor devices, electrical and electronic components, integrated circuits, circuit boards, chipsets, system on a chip (SoC), software and firmware for wireless communications and for audio signal processing; firmware for audio, acoustic, and other signal processing and calibration routines; microelectronic components for audio and data devices; analysis and calibration systems; apparatus and devices for calibrating and analyzing the performance of semiconductor devices, integrated circuits, chipsets, circuit boards, modules, electrical components, electronic components, optoelectronic components, microelectronic components, and radio frequency and baseband wireless communications equipment; digital signal processing firmware, software, and hardware; downloadable computer software incorporating digital signal processing algorithms in the field of audio signal manipulation; software and processors in the form of embedded integrated circuit packages with signal processing algorithms used for AI noise suppression, active noise cancellation, acoustic on-ear detection, beamforming for headphones, and acoustic echo cancellation; timing and signal integrity computer hardware, namely, oscillators, clock generators, clock buffers, network synchronizers, jitter attenuators, transceivers, clock multipliers, radio frequency synthesizers; clock generation and timing-related electronic components for use in electronic systems; electrical and electronic components, integrated circuits, semiconductor devices, circuit boards, software and firmware for clock generation and timing-related components and systems; power management, regulation, isolation, and protection components for use in electronic systems; electrical and electronic components, integrated circuits, and semiconductor devices for power management, regulation, isolation, and protection; electrical and electronic communications components and devices for use in telecommunications systems; integrated circuits, semiconductor devices, chipsets, and multi-chip modules for use in telecommunications systems; parts and fittings for the aforementioned goods; instruction manuals, datasheets, and applications notes provided in connection with the foregoing
Apparatus and methods for power detection in radio frequency (RF) systems are disclosed. In certain embodiments, a power detection system includes a power amplifier, a directional coupler connected to an output of the power amplifier, and a power detector that generates a differential power detection signal based on a single-ended radio frequency input signal received from the directional coupler. The differential power detection signal indicates an output power of the power amplifier, for example, a root mean square (RMS) output power.
09 - Appareils et instruments scientifiques et électriques
38 - Services de télécommunications
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
(1) Semiconductor devices; semiconductor devices for use in telecommunications equipment; electrical and electronic components; integrated circuits; chipsets; circuit boards; semiconductor and electronic devices for use in telecommunications equipment; apparatus and devices for conducting, switching, transforming, accumulating, regulating or controlling electricity; radio frequency and baseband wireless communication equipment; multichip modules which include radio transmitters, radio receivers, or transceivers; front end modules for conditioning radio frequency signals; electrical, electronic, optoelectronic, and microelectronic components for telecommunications, and radar equipment; electrical, electronic, optoelectronic, and microelectronic components for sensor sub-systems comprising sensors, signal conditioning devices and signal conditioning circuits, microcontrollers, communication modules and power supplies; antenna tuners; communication chipsets; communication modules; antenna elements; sensors and sensor sub-systems; sensor sub-systems comprising sensors, signal conditioning devices and signal conditioning circuits, microcontrollers, communication modules and power supplies; firmware and software embedded with or used in the control of semiconductor devices; circuits for use in evaluating or demonstrating semiconductors and semiconductor devices; acoustic filters and acoustic filter assemblies; radio frequency filters; electroacoustic filters; piezoelectric filters; piezoelectric transducers and sensors; surface acoustic wave (SAW) filters; bulk acoustic wave (BAW) filters; film bulk acoustic resonator (FBAR) filters; electrical, electronic, optoelectronic, and microelectronic components, and semiconductor and electronic devices, for communications, navigation, surveillance, and for electronic interfaces, power supply and application interfaces; optocouplers; semiconductor and electronic devices for use in audio signal processing equipment; semiconductor devices, electrical and electronic components, integrated circuits, circuit boards, chipsets, system on a chip (SoC), software and firmware for wireless communications and for audio signal processing; firmware for audio, acoustic, and other signal processing and calibration routines; microelectronic components for audio and data devices; analysis and calibration systems; apparatus and devices for calibrating and analyzing the performance of semiconductor devices, integrated circuits, chipsets, circuit boards, modules, electrical components, electronic components, optoelectronic components, microelectronic components, and radio frequency and baseband wireless communications equipment; digital signal processing firmware, software, and hardware; downloadable computer software incorporating digital signal processing algorithms in the field of audio signal manipulation; software and processors in the form of embedded integrated circuit packages with signal processing algorithms used for AI noise suppression, active noise cancellation, acoustic on-ear detection, beamforming for headphones, and acoustic echo cancellation; timing and signal integrity computer hardware, namely, oscillators, clock generators, clock buffers, network synchronizers, jitter attenuators, transceivers, clock multipliers, radio frequency synthesizers; clock generation and timing-related electronic components for use in electronic systems; electrical and electronic components, integrated circuits, semiconductor devices, circuit boards, software and firmware for clock generation and timing-related components and systems; power management, regulation, isolation, and protection components for use in electronic systems; electrical and electronic components, integrated circuits, and semiconductor devices for power management, regulation, isolation, and protection; electrical and electronic communications components and devices for use in telecommunications systems; integrated circuits, semiconductor devices, chipsets, and multi-chip modules for use in telecommunications systems; parts and fittings for the aforementioned goods; instruction manuals, datasheets, and applications notes provided in connection with the foregoing (1) Information, advisory and consultancy services for providing semi-conductor component parts for use in the fields of telecommunications, communications, navigation, surveillance, microelectronics, optoelectronics, acoustic filters, semiconductors, clock generation and timing, power management, power regulation, power isolation, power protection, and audio signal processing technology; transmitting and disseminating information and data providing semi-conductor component parts for use in the fields of telecommunications, communications, navigation, surveillance, microelectronics, optoelectronics, acoustic filters, semiconductors, clock generation and timing, power management, power regulation, power isolation, power protection, and audio signal processing technology via computer networks and the internet
(2) Custom manufacture and assembly of apparatus and devices for conducting, switching, transforming, accumulating, regulating or controlling electricity; custom manufacture and assembly of radio frequency and baseband wireless communications equipment; custom manufacture and assembly of semiconductor devices, integrated circuits, chipsets, circuit boards, optocouplers, acoustic filters and acoustic filter assemblies, digital signal processing algorithms, digital signal processing firmware, software, and hardware, clock generation and timing-related electronic components, communication components, power management, regulation, isolation, and protection components and electrical, electronic, optoelectronic and microelectronic components; custom manufacture and assembly of electrical, electronic, optoelectronic and microelectronic components for telecommunications, communications, navigation, surveillance, audio signal processing, and radar equipment; custom manufacture and assembly of radio frequency modules; custom manufacture and assembly of apparatus and devices for calibrating and analyzing the performance of semiconductor devices, integrated circuits, chipsets, circuit boards, modules, electrical components, electronic components, optoelectronic components, microelectronic components, and radio frequency and baseband wireless communications equipment; information, advisory and consultancy services relating to the aforesaid
(3) Product research and development; design and testing for new product development; engineering services; custom design, engineering and development of apparatus and devices for conducting, switching, transforming, accumulating, regulating or controlling electricity; custom design, engineering and development of radio frequency and baseband wireless communications equipment; custom design, engineering, development, research, technology consultation, analysis, and testing in the fields of telecommunications, communications, navigation, surveillance, and audio signal processing technology; custom design, engineering and development of semiconductor devices, integrated circuits, chipsets, circuit boards, optocouplers, acoustic filters and acoustic filter assemblies, digital signal processing algorithms, clock generation and timing-related electronic components, communication components, power management, regulation, isolation, and protection components, and electrical, electronic, optoelectronic and microelectronic components; custom design, engineering and development of radio frequency modules; custom design, engineering and development of apparatus and devices for calibrating and analyzing the performance of semiconductor devices, integrated circuits, chipsets, circuit boards, modules, electrical components, electronic components, optoelectronic components, microelectronic components, and radio frequency and baseband wireless communications equipment; design and development of firmware and software embedded with or used in the control of semiconductor devices; design and development of software and firmware for wireless communications, audio signal processing, calibration routines; design and development of software and firmware for clock generation and timing-related components and systems; information, advisory and consultancy services relating to the aforesaid
09 - Appareils et instruments scientifiques et électriques
38 - Services de télécommunications
Produits et services
Semiconductor devices; semiconductor devices for use in telecommunications equipment; electrical and electronic components; integrated circuits; chipsets; circuit boards; semiconductor and electronic devices for use in telecommunications equipment; apparatus and devices for conducting, switching, transforming, accumulating, regulating or controlling electricity; radio frequency and baseband wireless communication equipment; multichip modules which include radio transmitters, radio receivers, or transceivers; front end modules for conditioning radio frequency signals; electrical, electronic, optoelectronic, and microelectronic components for telecommunications, and radar equipment; electrical, electronic, optoelectronic, and microelectronic components for sensor sub-systems comprising sensors, signal conditioning devices and signal conditioning circuits, microcontrollers, communication modules and power supplies; antenna tuners; communication chipsets; communication modules; antenna elements; sensors and sensor sub-systems; sensor sub-systems comprising sensors, signal conditioning devices and signal conditioning circuits, microcontrollers, communication modules and power supplies; firmware and software embedded with or used in the control of semiconductor devices; circuits for use in evaluating or demonstrating semiconductors and semiconductor devices; acoustic filters and acoustic filter assemblies; radio frequency filters; electroacoustic filters; piezoelectric filters; piezoelectric transducers and sensors; surface acoustic wave (SAW) filters; bulk acoustic wave (BAW) filters; film bulk acoustic resonator (FBAR) filters; electrical, electronic, optoelectronic, and microelectronic components, and semiconductor and electronic devices, for communications, navigation, surveillance, and for electronic interfaces, power supply and application interfaces; optocouplers; semiconductor and electronic devices for use in audio signal processing equipment; semiconductor devices, electrical and electronic components, integrated circuits, circuit boards, chipsets, system on a chip (SoC), software and firmware for wireless communications and for audio signal processing; firmware for audio, acoustic, and other signal processing and calibration routines; microelectronic components for audio and data devices; analysis and calibration systems; apparatus and devices for calibrating and analyzing the performance of semiconductor devices, integrated circuits, chipsets, circuit boards, modules, electrical components, electronic components, optoelectronic components, microelectronic components, and radio frequency and baseband wireless communications equipment; digital signal processing firmware, software, and hardware; downloadable computer software incorporating digital signal processing algorithms in the field of audio signal manipulation; software and processors in the form of embedded integrated circuit packages with signal processing algorithms used for AI noise suppression, active noise cancellation, acoustic on-ear detection, beamforming for headphones, and acoustic echo cancellation; timing and signal integrity computer hardware, namely, oscillators, clock generators, clock buffers, network synchronizers, jitter attenuators, transceivers, clock multipliers, radio frequency synthesizers; clock generation and timing-related electronic components for use in electronic systems; electrical and electronic components, integrated circuits, semiconductor devices, circuit boards, software and firmware for clock generation and timing-related components and systems; power management, regulation, isolation, and protection components for use in electronic systems; electrical and electronic components, integrated circuits, and semiconductor devices for power management, regulation, isolation, and protection; electrical and electronic communications components and devices for use in telecommunications systems; integrated circuits, semiconductor devices, chipsets, and multi-chip modules for use in telecommunications systems; parts and fittings for the aforementioned goods; instruction manuals, datasheets, and applications notes provided in connection with the foregoing, all in electronic format. Telecommunications and communication information, advisory and consultancy services relating to semi-conductor component parts for use in the fields of telecommunications, communications, navigation, surveillance, microelectronics, optoelectronics, acoustic filters, semiconductors, clock generation and timing, power management, power regulation, power isolation, power protection, and audio signal processing technology; transmitting and disseminating information and data providing semi-conductor component parts for use in the fields of telecommunications, communications, navigation, surveillance, microelectronics, optoelectronics, acoustic filters, semiconductors, clock generation and timing, power management, power regulation, power isolation, power protection, and audio signal processing technology via computer networks and the internet.
78.
EXTRACTOR DESIGN WITH RESONATOR AND PHASE SHIFTER SERIES HYBRID STRUCTURE
A frequency extraction filter is disclosed. The frequency extraction filter can include a resonator that is coupled to a first node, and a phase shifter that is connected to the resonator in series. The phase shifter is coupled to a second node such that the resonator and the phase shifter are positioned between the first and second nodes. Impedance between the first and second nodes has an order of four or more.
A frequency extraction filter is disclosed. The frequency extraction filter can include a resonator that is coupled to a first node, and a phase shifter that is connected to the resonator in series. The phase shifter is coupled to a second node such that the resonator and the phase shifter are positioned between the first and second nodes. Impedance between the first and second nodes has an order of four or more.
Aspects of this disclosure relate to a multi-mode power amplifier system. A first power amplifier is configured to provide a radio frequency signal associated with a different radio access technology in a first mode than in a second mode. A second power amplifier is configured to be active in the first mode such that the first power amplifier and the second power amplifier are concurrently active in the first mode. A switch can electrically connect the output of the first power amplifier to different radio frequency signal path in the first mode than in the second mode. Related methods, power amplifier modules, and wireless communication devices are disclosed.
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/68 - Combinaisons d'amplificateurs, p. ex. amplificateurs à plusieurs voies pour stéréophonie
H03F 3/72 - Amplificateurs commandés, c.-à-d. amplificateurs mis en service ou hors service au moyen d'un signal de commande
Power amplifiers with supply capacitor switching are provided herein. In certain configurations, a mobile device includes a power management circuit that controls a voltage level of a supply voltage, and a front end system including a power amplifier that amplifies a radio frequency signal and that receives power from the supply voltage. The front end system further includes a supply capacitor having a first end electrically connected to the supply voltage, and a silicon-on-insulator (SOI) switch including a plurality of SOI field-effect transistors (FETs) electrically connected in series between a second end of the supply capacitor and a ground voltage. The SOI switch has an off state in which a first portion of the plurality of SOI FETs are controlled with the ground voltage and a second portion of the plurality of SOI FETs are controlled with a negative voltage less than the ground voltage.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H04B 1/401 - Circuits pour le choix ou l’indication du mode de fonctionnement
A flip-chip semiconductor-on-insulator die includes a substrate layer, an active layer, an insulator layer between the substrate layer and the active layer, a first metal layer, and a first via layer between the active layer and the first metal layer. The die at least first and second contact pads and a transistor including a first terminal formed within the active layer. A first portion of the first terminal falls within a footprint of the first contact pad and a second portion of the first terminal falls within a footprint of the second contact pad.
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/482 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H03F 3/213 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
83.
PACKAGED ACOUSTIC WAVE DEVICES WITH MULTILAYER PIEZOELECTRIC SUBSTRATE
Aspects and embodiments disclosed herein include a packaged acoustic wave component comprising a base layer, an acoustic wave filter disposed on an upper side of the base layer, a cap layer mounted to the upper side of the base layer such that a bottom side of the cap layer faces the upper side of the base layer, and an electrical shield layer disposed on the bottom side of the cap layer such that the electrical shield layer and the acoustic wave filter are positioned between the base layer and the cap layer.
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
84.
DEVICES, SYSTEMS AND METHODS RELATED TO DUAL-SIDED MODULES
A dual-sided module can include a redistribution layer having first and second sides, and a first-side portion implemented on the first side of the redistribution layer and including a first component mounted on the first side of the redistribution layer, and a first mold structure implemented to at least partially encapsulate the first component. The dual-sided module can further include a second-side portion implemented on the second side of the redistribution layer and including a second component mounted on the second side of the redistribution layer, a plurality of conductive mounting structures, and a second mold structure implemented to at least partially encapsulate the second component. The second mold structure can further encapsulate the conductive mounting features while providing respective exposed mounting surfaces of the conductive mounting features.
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 23/552 - Protection contre les radiations, p. ex. la lumière
85.
POWER AMPLIFIER POWER MANAGEMENT IN USER EQUIPMENT
Apparatus and methods for power amplifier power management are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency signal, a front-end system including a first power amplifier module that amplifies the radio frequency signal, and a power management system including an envelope tracking power management unit that provides an envelope tracking supply voltage to the first power amplifier module, and a first average power tracking power management unit that provides an average power tracking supply voltage to the first power amplifier module. The first power amplifier module is configured to selectively switch between the envelope tracking supply voltage and the average power tracking supply voltage.
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H04B 1/38 - Émetteurs-récepteurs, c.-à-d. dispositifs dans lesquels l'émetteur et le récepteur forment un ensemble structural et dans lesquels au moins une partie est utilisée pour des fonctions d'émission et de réception
A method includes receiving a first signal at a front-end module (FEM) comprising a power amplifier, the first signal indicating an increase in expected power or modulation, in response to receiving the first signal, increasing power at the power amplifier for one or more packets; and, after processing the one or more packets, reducing power at the power amplifier.
A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a wafer level packaging structure having a shield structure base, a multi-layer piezoelectric substrate including a piezoelectric layer and a support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. A difference between a coefficient of thermal expansion of the shield structure base and a coefficient of thermal expansion of the support substrate is 13 ppm/deg or less.
A packaged multi-layer piezoelectric substrate surface acoustic wave device is disclosed. The packaged surface acoustic wave device can include a multi-layer piezoelectric substrate including a piezoelectric layer and a quartz substrate, an interdigital transducer electrode in electrical communication with the piezoelectric layer, and a packaging structure having a coefficient of thermal expansion greater than 0 ppm/° C. and equal to or less than 35 ppm/° C. The packaging structure is coupled to the multi-layer piezoelectric substrate. The interdigital transducer electrode is positioned between the quartz substrate and the packaging structure.
A carrier aggregation circuit can include a mid-band path having a filter assembly and a phase shifting circuit, to support one or more frequency bands. The circuit can further include first and second high-band paths each being configured to support a frequency band and having a filter and a phase shifting circuit. Selected high-band filter and the mid-band filter assembly can be configured to provide impedances having the same sign for imaginary parts, and the phase shifting circuit of the mid-band path can be configured to provide a desired reflection coefficient phase at one of the first and second high-band frequency bands. The circuit can further include a common node coupled to outputs of the mid-band, first high-band and second high-band paths, and a tuning circuit implemented to remove the imaginary part of the impedance of the mid-band filter assembly at the frequency band of the selected high-band filter.
H04B 7/08 - Systèmes de diversitéSystèmes à plusieurs antennes, c.-à-d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station de réception
H03F 3/19 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
Apparatus and methods for power amplifier output matching is disclosed. In one aspect, there is provided an output matching circuit including an input configured to receive an amplified radio frequency signal from a power amplifier, a first output, and a second output. The output matching circuit further includes a first matching circuit electrically connected between the input of the output matching circuit and the first output, the first matching circuit configured to suppress harmonics of a fundamental frequency of the amplified radio frequency signal when the amplified radio frequency signal is within a first band. The output matching circuit further includes a second matching circuit electrically connected between the input of the output matching circuit and the second output, the second matching circuit configured to suppress harmonics of the fundamental frequency of the amplified radio frequency signal when the amplified radio frequency signal is within a second band different from the first band.
H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
Radio frequency front end modules are provided. In one aspect, a front end system includes at least one power amplifier configured to amplify a transmit radio frequency signal, at least one low noise amplifier configured to receive a receive radio frequency signal, an output node coupled to an antenna. The front end system further includes at least one switch configured to selectively couple the output node to the at least one power amplifier during a transmit period and to the at least one low noise amplifier during a receive period, at least one transmit filter coupled between the power amplifier and the at least one switch, and at least one receive filter coupled between the low noise amplifier and the at least one switch.
An acoustic wave resonator is disclosed. The acoustic wave resonator includes a multi-layer piezoelectric substrate including a base layer, an intermediate layer, and a piezoelectric layer with lithium niobate (LiNbO3) having a cut angle ranging from 20 to 40 degrees. The acoustic wave resonator includes interdigital transducer electrodes that are in electrical communication with the piezoelectric layer.
Aspects of this disclosure relate to determining a spectrum mode of a Convergent Digital Radio signal. The Convergent Digital Radio signal can be filtered by a plurality of filters. Correlation coefficients can be generated from filtered signals, in which each correlation coefficient corresponds to a particular spectrum mode. The spectrum mode can be selected based on the correlation coefficients.
Disclosed is an acoustic wave resonator comprising a substrate material formed of aluminum nitride (AIN) doped with one or more of zinc (Zn), lithium (Li), silicon (Si), or germanium (Ge) to enhance performance of the acoustic wave resonator.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
H03H 9/00 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques
H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
Transition smoothing apparatus for reducing spurious input to a system under feedback control connected to a control loop. The apparatus includes a loop filter to integrate an error between an input signal applied to the loop filter and an output signal of the system under feedback control, an analog-to-digital converter to provide digitized integrated error values, a controller to generate output values supplied to the system under feedback control in response to the digitized integrated error values and in a start-up sequence to control a feedback digital-to-analog converter according to the digitized integrated error values to supply a first control signal to the loop filter and control the system under feedback control to generate a second control signal, and an alignment detector to detect phase alignment between the first control signal and the second control signal to control a smooth transition into closed loop operation of the control loop.
Cellular radios employing multiple power amplifiers for legacy communications are disclosed herein. In certain embodiments, a mobile phone includes a first antenna, a second antenna, and an RFFE including a first transmit path operable to transmit a first RF signal on the first antenna using a first communication standard in a first mode, and a second transmit path operable to transmit a second RF signal on the second antenna using the first communication standard in the first mode. Furthermore, in a second mode the RFFE is implemented to reuse the first transmit path and the second transmit path to synchronously transmit a third RF signal on the first antenna and the second antenna using a second communication standard.
Apparatus and methods for antenna arrays with staggered rows of antennas for dual frequency operation are provided. In certain embodiments, a radio frequency module includes an antenna array attached to a module substrate and that includes a plurality of antenna elements having a first row of antenna elements and a second row of antenna elements that are staggered. The radio frequency module further includes a semiconductor die attached to the module substrate and including a plurality of radio frequency signal conditioning circuits, a plurality of switches coupled between the plurality of radio frequency signal conditioning circuits and the antenna array, and a control circuit configured to control a selection of the plurality of antenna elements by the plurality of switches.
H01Q 21/06 - Réseaux d'unités d'antennes, de même polarisation, excitées individuellement et espacées entre elles
H01Q 3/22 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier l'orientation suivant la variation de fréquence de l'onde rayonnée
H01Q 3/24 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier l'orientation, par commutation de l'énergie fournie, d'un élément actif rayonnant à un autre, p. ex. pour commutation du lobe
H01Q 5/42 - Structures imbriquées ou entrelacéesDispositions combinées ou présentant un couplage électromagnétique, p. ex. comprenant plusieurs éléments rayonnants alimentés sans connexion commune utilisant plusieurs réseaux imbriqués
H04B 7/06 - Systèmes de diversitéSystèmes à plusieurs antennes, c.-à-d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
98.
SYSTEM, APPARATUS AND METHOD FOR PROVIDING REMOTE TUNER OPTIONS IN A VEHICLE ENTERTAINMENT SYSTEM
In one example, a remote tuner module includes: a first tuner to receive, process and demodulate a first radio frequency (RF) signal to output an analog audio signal, and to receive and process a second RF signal to output a first downconverted modulated signal; a second tuner to receive and process the second RF signal to output a second downconverted modulated signal; a demodulator circuit coupled to the first and second tuners to demodulate and link the first and second modulated signals, to output a linked demodulated signal. The remote tuner module may further include a gateway circuit coupled to at least the demodulator circuit to output the analog audio signal and the linked demodulated signal.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 1/403 - Circuits utilisant le même oscillateur pour générer à la fois la fréquence de l’émetteur et la fréquence de l’oscillateur local du récepteur
H04B 7/26 - Systèmes de transmission radio, c.-à-d. utilisant un champ de rayonnement pour communication entre plusieurs postes dont au moins un est mobile
H04N 5/46 - Circuits de réception pour la réception à volonté de plus d'un type de norme d'émission
H04N 5/50 - Indicateurs d'accordRéglage automatique de l'accord
A radio frequency front end includes a first receiver system including a first receive path connected to a first antenna and configured to output a first receive signal in a first band, a second receive path connected to a second antenna and configured to split a first filtered receive signal to output a second receive signal in the first band and to output a third receive signal in a second band, the second band adjacent to the first band, and a third receive path connected to a third antenna and configured to output a fourth receive signal in the second band. The system can includes a second similar receiver system connected to three additional antennas, and be configured for 4×4 downlink MIMO operation.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 7/024 - Utilisation coopérative d’antennes sur plusieurs sites, p. ex. dans les systèmes à plusieurs points coordonnés ou dans les systèmes coopératifs à "plusieurs entrées plusieurs sorties" [MIMO]
A method for processing audio signals can include receiving an audio signal and separating the audio signal into a first audio component and a second audio component. The method can further include providing a gain for each of the first and second audio components to result in a respective gain adjusted audio component. The method can further include combining the first and second gain adjusted audio components to provide a processed audio signal, with the gains of the first and second audio components being configured so that a selected one of the first and second audio components has improved intelligibility by a listener when the processed audio signal is converted into sound by a speaker.
G10L 21/0364 - Amélioration de l'intelligibilité de la parole, p. ex. réduction de bruit ou annulation d'écho en changeant l’amplitude pour améliorer l'intelligibilité
