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2025
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Invention
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Heterojunction semiconductor power devices using different bandgap semiconductors.
Trench-gate M... |
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2024
|
Invention
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Self-aligned source contact for sic switch utilizing oxidation rate difference between poly-si an... |
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|
Invention
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Mosfet with distributed doped p-shield zones under trenches having different depths.
A vertical ... |
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Invention
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Vertical mosfet using a silicon carbide layer and a silicon layer for improved performance.
A ve... |
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Invention
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Vertical mosfet with high short circuit withstand time capability.
A vertical MOSFET has an N-ty... |
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2023
|
G/S
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Semiconductors; Semiconductor chips; Semiconductor devices |
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2021
|
Invention
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Mosfet with distributed doped p-shield zones under trenches. A vertical trench MOSFET is formed w... |
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2020
|
Invention
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High density power device with selectively shielded recessed field plate. A vertical transistor s... |
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|
Invention
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Lateral transistors and methods with low-voltage-drop shunt to body diode. Methods and systems fo... |
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|
Invention
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Split gate power device and its method of fabrication. A split gate power device is disclosed hav... |
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2019
|
Invention
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Lateral semiconductor power devices.
Methods and systems for lateral power devices, and methods ... |
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|
Invention
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Power semiconductor devices, methods, and structures with embedded dielectric layers containing p... |
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2018
|
Invention
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Trench transistors and methods with low-voltage-drop shunt to body diode. Methods and systems for... |
|
|
Invention
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Self-aligned shielded trench mosfets and related fabrication methods.
Structures and fabrication... |
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|
Invention
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Self-aligned shielded trench mosfets and related fabrication methods. Structures and fabrication ... |
|
|
Invention
|
Semiconductor on insulator devices containing permanent charge.
A lateral SOI device may include... |
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Invention
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Vertical rectifier with added intermediate region. A new semiconductor rectifier structure. In ge... |
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|
Invention
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Vertical rectifier with added intermediate region. A new semiconductor rectifier structure. A MOS... |
|
|
Invention
|
Mos-gated power devices, methods, and integrated circuits.
MOS-gated devices, related methods, a... |
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|
Invention
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Trench-gated heterostructure and double-heterostructure active devices. Heterostructure and doubl... |
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|
Invention
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Trench-gated heterostructure and double-heterojunction active devices. Heterostructure and double... |
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|
Invention
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Vertical power mos-gated device with high dopant concentration n-well below p-well and with float... |
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2017
|
Invention
|
Power device having a polysilicon-filled trench with a tapered oxide thickness. In one embodiment... |
|
|
Invention
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Power mosfet having lateral channel, vertical current path, and p-region under gate for increasin... |
|
|
Invention
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Power mosfet having planar channel, vertical current path, and top drain electrode. In one embodi... |
|
|
Invention
|
Fabrication of trench-gated wide-bandgap devices.
A silicon carbide (or comparable) trench trans... |
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|
Invention
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Fabrication of trench-gated wide-bandgap devices. A silicon carbide (or comparable) trench transi... |
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|
Invention
|
Vertical power transistor with termination area having doped trenches with variable pitches. Vari... |
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|
Invention
|
Vertical power transistor die with etched beveled edges for increasing breakdown voltage. Various... |
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|
Invention
|
Vertical power transistor with deep trenches and deep regions surrounding cell array. Various imp... |
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|
Invention
|
Vertical power transistor with dual buffer regions. Various improvements in vertical transistors,... |
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|
Invention
|
Vertical power transistor with deep floating termination regions. Various improvements in vertica... |
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|
Invention
|
Semiconductor device.
A semiconductor device includes a semiconductor layer of a first conductiv... |
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2016
|
Invention
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Lateral semiconductor power devices. Methods and systems for lateral power devices, and methods f... |
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|
Invention
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Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shi... |
|
|
Invention
|
Lateral power mosfet with non-horizontal resurf structure. In one embodiment, a RESURF structure ... |
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|
Invention
|
Semiconductor device with electric field relaxation portion in insulating layer between lower and... |
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G/S
|
Semiconductors Research, design, engineering, and development of technology solutions for power m... |
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G/S
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Semiconductors |
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2015
|
G/S
|
Semiconductors Research, design, engineering and/or development of technology solutions for power... |
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2009
|
G/S
|
Electronic semi-conductors; Semi-conductors |
