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2013
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Invention
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Fabrication of mos device with integrated schottky diode in active region contact trench. Fabrica... |
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2012
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Invention
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Fabrication of mos device with schottky barrier controlling layer. Fabricating a semiconductor de... |
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Invention
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Power mos device fabrication. Fabricating a semiconductor device includes forming a mask on a sub... |
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Invention
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Source and body contact structure for trench-dmos devices using polysilicon. A semiconductor devi... |
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Invention
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Method of making a low profile flip chip power module.
A power module is proposed to package an ... |
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Invention
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Configuration and method to form mosfet devices with low resistance silicide gate and mesa contac... |
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2011
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Invention
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Mos device with varying contact trench lengths. A semiconductor device is formed on a semiconduct... |
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Invention
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Etch depth determination structure. A semiconductor device wafer includes a test structure. The t... |
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Invention
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High-mobility trench mosfets. High-mobility vertical trench DMOSFETs and methods for manufacturin... |
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Invention
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Voltage/current control apparatus and method. A voltage/current control apparatus and method are ... |
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Invention
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Power mos device fabrication. Fabricating a semiconductor device includes forming a hard mask on ... |
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Invention
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Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconduc... |
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Invention
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Wafer level chip scale package and process of manufacture. Power wafer level chip scale package (... |
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Invention
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Planar grooved power inductor structure and method. An inductor may include a planar ferrite core... |
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2010
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Invention
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Vertically packaged mosfet and ic power devices as integrated module using 3d interconnected lami... |
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Invention
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Integration of a sense fet into a discrete power mosfet. A semiconductor device includes a main f... |
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2009
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Invention
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Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insula... |
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Invention
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Configuration and method of manufacturing the one-time programmable (otp) memory cells. This inve... |
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Invention
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Trench mosfet with an ono insulating layer sandwiched between an esd protection module atop and a... |
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Invention
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Symmetric blocking transient voltage suppressor (tvs) using bipolar transistor base snatch. A sym... |
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Invention
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Bottom source ldmosfet method. This invention discloses a method to form a bottom-source lateral ... |
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Invention
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Power mos device with conductive contact layer. A semiconductor device includes a drain, a body d... |
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Invention
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Resistance-based etch depth determination for sgt technology. L. The wafer may comprise one or mo... |
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Invention
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Processes for manufacturing mosfet devices with excessive round-hole shielded gate trench (sgt). ... |
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2008
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Invention
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True csp power mosfet based on bottom-source ldmos. A semiconductor package may comprise a semico... |
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Invention
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Reduced mask configuration for power mosfets with electrostatic discharge (esd) circuit protectio... |
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Invention
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Semiconductor power device package having a lead frame-based integrated inductor. A semiconductor... |
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Invention
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Mos device with integrated schottky diode in active region contact trench. A semiconductor device... |
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Invention
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Stacked-die package for battery power management. A stacked-die package for battery protection is... |
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Invention
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Configurations and methods for manufacturing charge balanced devices. This invention discloses a ... |
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Invention
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Electrostatic discharge (esd) protection applying high voltage lightly doped drain (ldd) cmos tec... |
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Invention
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Applying trenched transient voltage suppressor (tvs) technology for distributed low pass filters.... |
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Invention
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Source and body contact structure for trench-dmos devices using polysilicon.
A semiconductor dev... |
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Invention
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High power and high temperature semiconductor power devices protected by non-uniform ballasted so... |
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2007
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Invention
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Mos device with low injection diode. A semiconductor device is formed on a semiconductor substrat... |
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Invention
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Mos device with schottky barrier controlling layer. A semiconductor device formed on a semiconduc... |
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Invention
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Co-packaged high-side and low-side nmosfets for efficient dc-dc power conversion.
A circuit pack... |
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Invention
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Bottom anode schottky diode structure and method. This invention discloses a bottom-anode Schottk... |
