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2024
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Invention
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Semiconductor chip manufacturing method.
A substrate made of doped single-crystal silicon has an... |
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Invention
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Waveguide of an soi structure.
A method includes forming a layer made of a first insulating mate... |
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Invention
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Pixel with global shutter.
A pixel includes a photosensitive circuit, a sense node, a first tran... |
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Invention
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Hybrid source for generating entangled pairs of photons. The invention relates to a hybrid source... |
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Invention
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Method for producing mosfet transistors incorporating air cavities to reduce capacitive coupling ... |
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Invention
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Spad photodiode.
A photodiode is formed in a semiconductor substrate of a first conductivity typ... |
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Invention
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Image sensor.
An image sensor includes a pixel array where each pixel is formed in a portion of ... |
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Invention
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Device and method for continuous-time energy calculation of an analog signal.
Device (1), for co... |
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Invention
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Pixel with an improved quantum efficiency.
The present disclosure relates to a pixel comprising:... |
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Invention
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Image and depth pixel.
A sensor includes pixels supported by a substrate doped with a first cond... |
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Invention
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Phase-change memory.
The present description concerns a device including phase-change memory cel... |
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Invention
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Integrated circuit comprising a substrate equipped with a trap-rich region, and fabricating proce... |
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Invention
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Image acquisition device. An image acquisition device includes an array of color filters and an a... |
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Invention
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Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing met... |
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Invention
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Photodiode comprising a memory area.
The present disclosure concerns a photodiode including at l... |
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2023
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Invention
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Digital to analog converter.
The present disclosure relates to a DAC that includes: a first pixe... |
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Invention
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Image sensor.
The present disclosure concerns an image sensor including a plurality of pixels, e... |
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Invention
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Image acquisition device.
An image sensor includes photodetection pixels formed inside and on to... |
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Invention
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Variable-capacitance diode.
A variable-capacitance diode is formed in a doped semiconductor subs... |
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Invention
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Self-referenced and regulated sensing solution for phase change memory with ovonic threshold swit... |
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Invention
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Set of integrated standard cells.
An integrated circuit includes at least a first standard cell ... |
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Invention
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Light sensor.
An embodiment light sensor includes an array of pixels arranged in rows and in col... |
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Invention
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Testing device.
A device for testing an optical device, comprising a first structure comprising ... |
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Invention
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Radio frequency receiver.
A reception element receives an analog signal. The received analog sig... |
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Invention
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Integrated circuit including a passive component in an interconnection part, and corresponding ma... |
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Invention
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Insulating trench manufacturing.
The present description concerns a method of manufacturing an i... |
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Invention
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Method of fabricating an electronic device.
A first wafer includes a first semiconductor layer a... |
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Invention
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Phase-change memory cell having a compact structure.
A memory cell includes a selection transist... |
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Invention
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Assembly of integrated circuit wafers.
According to one aspect, there is proposed a method for a... |
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Invention
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Transistor manufacturing method.
A bipolar transistor is manufactured by: forming a collector re... |
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Invention
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Manufacturing method.
An electronic device includes an insulating first layer covering a second ... |
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Invention
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Spad pixel.
An electronic device includes a stack of a first level having a SPAD, a second level... |
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Invention
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Mosfet transistor.
A transistor includes a source region, a drain region and a body region arran... |
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Invention
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Bipolar transistor. A bipolar transistor includes a collector. The collector is formed by: a firs... |
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Invention
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Optoelectronic device.
A device includes a first pixel, based on quantum dots, configured to del... |
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Invention
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Method of fabricating an electronic chip including a memory circuit.
A method of manufacturing a... |
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Invention
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Read only memory. The present description concerns a ROM including at least one first rewritable ... |
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Invention
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Method of filling a trench formed in a semiconductor substrate.
An embodiment provides a method ... |
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Invention
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Mosfet transistor.
A MOSFET transistor includes, on a semiconductor layer, a stack of a gate ins... |
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Invention
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Image sensor with pixel matrix and microlens matrix having differing pitches from each other.
Th... |
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Invention
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Single photon avalanche diode.
A device includes a single photon avalanche diode in a portion of... |
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Invention
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Single photon avalanche diode.
A device includes a single photon avalanche diode in a substrate ... |
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Invention
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Switch based on phase-change material.
The present description concerns a switch based on a phas... |
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Invention
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Optical filter for a multispectral sensor and method for manufacturing such a filter.
The presen... |
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Invention
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Optical filter for multispectral sensor.
The present description concerns an optical filter inte... |
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Invention
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Mos transistor on soi structure.
The present description concerns an electronic device comprisin... |
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Invention
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Image sensor.
The present description concerns an image sensor formed inside and on top of a sem... |
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Invention
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Polarimetric image sensor.
The present description concerns a polarimetric image sensor formed i... |
