Semiconductor bonding with better placement accuracy at higher throughputs is described. In some embodiments, a substrate holder operatively associated with a track or turret is used. The substrate holder receives and holds a first substrate, and moves the first substrate through process stations to enable the first substrate to be bonded to a second substrate. The process stations comprise an alignment station and a bonding station. Alignment sensors at the alignment station are configured to determine a position of the first substrate relative to the substrate holder. A controller causes the substrate holder to move along the track or turret to the bonding station, and align the first substrate with the second substrate for bonding based on the position of the first substrate relative to the substrate holder. In some more general embodiments, an array of (electrical) contacts such as bond pads is used for alignment.
G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
An apparatus for training a machine learning model to determine a loss function for use in image analysis includes a memory storing a set of instructions and at least one processor configured to execute the set of instructions to cause the apparatus to perform: encoding an image of a batch of images to determine a first latent space representation; transforming the image; encoding the transformed image to determine a second latent space representation; selecting corresponding parameters from the first latent space representation and the second latent space representation; and determining the loss function over all images in the batch of images based on the selected corresponding parameters from the first latent space representation and the second latent space representation.
A target supply system for a radiation source, wherein the target supply system comprises: a pressure module, configured to pressurise a liquid target material; a conduit, configured to carry liquid target material, fluidly connected to the pressure module; and a bleed module. The bleed module comprises: a vessel; a configurable connector, provided inline with the conduit and connected with the vessel; wherein the configurable connector is switchable between a number of connector configurations, comprising: an operational configuration, wherein fluid passage through the conduit is permitted and fluid passage into the vessel is not permitted; and a bleed configuration, wherein a portion of the conduit is in fluid communication with the vessel.
Semiconductor bonding with better placement accuracy and/or higher throughputs is described. A track comprising a path through a plurality of process stations is used. A plurality of substrate holders are operatively associated with the track. Each substrate holder is configured to receive and hold a first substrate, and move the first substrate through the plurality of process stations to enable the first substrates to be bonded to a second substrate. Each substrate holder comprises a releasable clamp configured to clamp the first substrate to the substrate holder until the first substrate is released to be bonded to the second substrate. Each releasable clamp comprises a certain infrastructure (e.g., vacuum, electricity, etc.) that moves with longer stroke movements in non-planar dimensions along the track (in contrast to a semiconductor process scanner and/or other devices where a substrate holder may be moved in a plane with only relatively short movements).
G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
Disclosed is a method of determining at least one vertical parameter of interest relating to a structure of interest on a substrate comprising: obtaining first metrology data and/or data derived therefrom, the first metrology data relating to a measurement of the structure of interest when not comprising a layer of interest to which the vertical parameter of interest relates, or a representative structure being representative of the structure of interest when not comprising the layer of interest; obtaining second metrology data relating to a measurement of the structure of interest when comprising the layer of interest; removing the first metrology data and/or data derived therefrom from the second metrology data to obtain residual metrology data; obtaining at least one model to relate the residual metrology data to the vertical parameter of interest; and using the model to derive the vertical parameter of interest from the residual metrology data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/956 - Inspecting patterns on the surface of objects
H01L 21/66 - Testing or measuring during manufacture or treatment
6.
FIXED PARALLEL ALIGNMENT SENSORS IN COMBINATION WITH FAST SCANNING
An alignment system includes a substrate stage, a plurality of sensors, and a control system. The substrate stage supports and moves a substrate having a plurality of substrate alignment marks disposed thereon. The plurality of sensors are arranged on a frame. The control system scans the substrate stage with respect to the frame. The control system controls movement of the substrate stage to correct for any misalignment or pitch mismatch between the plurality of sensors and the plurality of substrate alignment marks based on a known position of individual ones of the plurality of sensors with respect to each other.
A uniformity correction system includes a first set of fingers, a second set of fingers, a first actuator coupled to the first set of fingers to independently move each finger of the first set of fingers, and a second actuator coupled to the second set of fingers to independently move each finger of the second set of fingers. The first and second actuators are arranged in a stacked assembly. Advantageously the stacked assembly can independently control each finger of the first and second sets of fingers into and out of a path of a radiation beam to correct an intensity of the radiation beam, decrease an overall volume (footprint) of the system, increase a transverse stiffness and an actuation speed of the first and second sets of fingers, arrange the first and second sets of fingers in the same plane, and increase cooling of the first and second actuators.
A radiation source for generating EUV light from plasma, comprises a plasma generation region to hold a plasma, a first reflecting body facing the plasma generation region and having a primary focus and a secondary focus, configured to reflect EUV light generated in the plasma generation region to the secondary focus, a second reflecting body facing the plasma generation region, wherein the second reflecting body is configured to reflect the EUV light from the plasma generation region to or near the primary focus and via the first reflecting body to the secondary focus. The radiation source is configured in that in use a self image of the plasma generation region reflected by the second reflecting body is offset relative to the plasma generation region.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
9.
SEMICONDUCTOR BONDING DISTORTION ADJUSTMENT SYSTEMS AND METHODS
Semiconductor bonding with better placement accuracy at higher throughputs compared to prior systems is described. Typical substrates (e.g., dies, wafers, and/or other substrates) have some amount of distortion (e.g., translational distortion, rotational distortion, magnification distortion and/or other residual distortion) that needs to be corrected prior to bonding. Advantageously, an actuator is configured to cause adjustment of a first substrate to move a feature from a determined position to an expected position. This aligns the first substrate to a second substrate for bonding. In some embodiments, the actuator is a mechanical and/or thermal actuator configured to cause in plane and/or out of plane deformation of the first substrate and/or the second substrate based on the feature position determination. The feature may be a metrology mark, an electrical contacts, or a patterned semiconductor device structure, for example.
G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
10.
METHOD OF DESIGNING AN OPTICAL COMPONENT FOR COUPLING BROADBAND RADIATION INTO AN OPTICAL FIBER
A method of designing an optical component for coupling a broadband radiation into a first optical fiber, comprising obtaining a radius-wavelength relationship between a collimated beam radius and a wavelength of the broadband radiation in a wavelength range of the broadband radiation; determining a plurality of light-transmitting zones in a transversal plane of the optical component based on the radius-wavelength relationship, wherein the transversal plane is perpendicular to an optical axis of the optical component, and wherein each of the plurality of light-transmitting zones is configured to transmit a different respective wavelength range either overlapping with or falling within the wavelength range of the broadband radiation; and optimizing an efficiency of coupling of the broadband radiation into the optical fiber for each of the different wavelength ranges by varying one or more parameters associated with the optical component.
A bonding detector system comprising a radiation sensor, one or more processors, instructions, or other components is described. The system comprises a radiation sensor configured to generate a signal based on a pattern of diffracted radiation received from a diffraction based alignment mark of a semiconductor die. The instructions cause the one or more processors to determine a position of the diffraction based alignment mark based on the signal; and generate, based on the position, a signal configured to cause alignment of the semiconductor die to a bonding location.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
12.
METHOD AND MEASUREMENT SYSTEM FOR DETERMINING DATA RELATING TO ABERRATIONS CAUSED BY A PROJECTION SYSTEM
A method is provided of determining data relating to aberrations, the method comprising: providing a patterning device and a sensor apparatus with a plurality of detector regions; illuminating the patterning device with radiation, wherein each patterned region patterns a measurement beam; sequentially projecting individual patterned measurement beams onto the sensor apparatus to make a measurement of radiation at each detector region which aligns with a patterned region when the patterning device and the sensor apparatus are in a first configuration; moving the patterning device or the sensor apparatus to provide a second configuration; sequentially projecting individual patterned measurement beams onto the sensor apparatus to make a measurement of radiation at each detector region which aligns with a patterned region in the second configuration; and determining, from the radiation measurements, data relating to aberrations caused by the projection system.
A broadband radiation source assembly comprising: a pump laser source configured to output a burst of radiation pulses; and an optical fiber comprising an optical medium configured to generate broadband radiation from the radiation pulses via a nonlinear process. Each burst comprises a plurality of radiation pulses. A method of generating broadband radiation is also described.
A method includes measuring a wavefront of a first beam of light on an apparatus to determine a measured aberration of the first beam of light, comparing the measured aberration to a desired aberration, generating a desired mirror profile of a deformable mirror that changes the measured aberration into the desired aberration, and deforming the deformable mirror based on the desired mirror profile. Lithographic apparatuses having various configurations for incorporating a deformable mirror into a lithographic apparatus are also disclosed.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
15.
DIGITAL HOLOGRAPHY SYSTEM AND METHOD FOR DIFFRACTION BASED ALIGNMENT
A metrology system comprising: an illumination source, the illumination source configured to produce a beam of illumination; wherein at least a first portion of the beam is diffracted by a target and wherein at least a second portion of the beam is not diffracted by the target; a detector, the detector configured to detect a recombination of the first portion of the beam diffracted by the target and the second portion of the beam not diffracted by the target; and a processor operatively connected with the detector, the processor configured to determine a phase and/or amplitude of a waveform of the first portion of the beam after it has interacted with the target based on the recombination detected by the illumination detector.
Described herein is a method and system for designing a mask pattern. A system may obtain a set of derived mask patterns and their associated cost data that is indicative of performance cost of the derived mask patterns. The set of derived mask patterns may be derived from (e.g., by perturbing) a reference mask pattern, which is an optimal mask pattern solution generated using a mask optimization process (e.g., inverse lithography solution). The cost data may include wafer-level key performance indicator (KPI) indicative of wafer imaging performance or mask-level KPI indicative of mask pattern evaluation. The set of target patterns to which the set of derived mask patterns correspond, the set of derived mask patterns, and a set of cost data thereof are used as training data to train a mask prediction model to generate a predicted mask pattern for an input target pattern and input cost data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
17.
MULTIWAVELENGTH MICRO-OPTICAL PATTERNING PROCESS METROLOGY SYSTEMS AND METHODS
Compact semiconductor patterning metrology is described. To reduce patterning errors, more metrology targets are measured in parallel across a wafer. Parallel measurements using multiple parallel metrology sensors requires smaller and smaller sensors. Photonic integrated circuits are small enough to be used to make these parallel measurements. The photonic integrated circuits described herein comprise an emitter that directs radiation toward a metrology target; receiving micromirrors that receive diffracted orders of radiation from the metrology target; and output waveguides configured to receive the diffracted orders of radiation from the receiving micromirrors, and cause interference of the diffracted orders of radiation in the photonic integrated circuit. A radiation detector is configured to generate a metrology signal based on the interfered diffracted orders of radiation. The photonic integrated circuit facilitates parallel sensing of diffracted radiation from multiple metrology targets, a dense arrangement to form a significantly more compact sensor, and has other advantages.
Van De Ven, Bastiaan, Lambertus, Wilhelmus, Marinus
Brokken, Dirk
Ramos, André, Filipe, Lemos, Antunes, Palma
Looman, Joris, Maria, Gerardus
Van Vliet, Wilhelmus, Petrus
Verhulp, Bas
Abstract
Disclosed herein is a module for a lithographic apparatus comprising: a component table configured to hold a component; a sensor member; and a sensor clamping mechanism configured to exert an active clamping force for clamping the sensor member relative to the component table. The sensor clamping mechanism may e.g. be configured to exert a vacuum clamping force or an electrostatic clamping force for clamping the sensor member.
A metrology system includes an illumination system, at least one optical element, a detector, and a controller. The illumination system directs a beam of radiation at a target disposed on a substrate. The at least one optical element has a plurality of surface structures comprising at least one of nanopillars, nano-hemispheres, or submicron-scale cones. The plurality of surface structures are arranged with a random or periodic distribution to produce a modified refractive index profile to receive and condition at least a portion of the beam of radiation. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation. The controller is coupled to the illumination system and the detector. The controller controls a characteristic of the beam of radiation and determines a characteristic of the target based on the measurement signal.
In one aspect of the present disclosure, there is provided a method comprising: placing a reflective mirror into a chamber, the reflective mirror comprising a substrate and a reflective coating on the substrate; generating a vacuum within the chamber; providing a bias to the reflective mirror placed in the chamber; introducing plasma gasses into the chamber; and generating a reactive plasma with the gasses in the chamber while the bias is provided to the reflective mirror in order to form an oxide layer on the reflective coating to passivate the reflective coating. In another aspect of the present disclosure, there is provided a mirror comprising: a substrate; a reflective coating on the substrate; an oxide layer formed on the reflective coating, the oxide layer having an average thickness of greater than 3 nm and a thickness non-uniformity of 0.12 nm or less.
C23C 14/18 - Metallic material, boron or silicon on other inorganic substrates
C03C 17/36 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
C03C 23/00 - Other surface treatment of glass not in the form of fibres or filaments
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A radiation filter configured to filter a radiation beam comprising a plurality of wavelengths. The filter comprises a first material and a second material. The second material has a higher transmission for a first wavelength radiation than the first material. The second material is configured to change a phase of the first wavelength radiation. The first material and second material are arranged in a lateral distribution along a surface of the filter, and such that the first wavelength radiation transmitted through the first material and first wavelength radiation transmitted through the second material interfere destructively.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
22.
CARRIER, ASSESSMENT APPARATUS, AND METHOD OF USING THE CARRIER
The present invention provides a carrier comprising a carrier surface. The carrier surface is configured to face a first major surface of a sample. A second major surface of the sample, opposite the first major surface of the sample, is configured to contact a sample support. The carrier surface comprises a gripping device configured to contact the sample, and to lift the sample away from the sample support.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A fluid handling structure configured to confine immersion liquid to an immersion space between the fluid handling structure and a facing surface, comprising: at least one liquid supply opening configured to supply immersion liquid to the immersion space; at least one fluid extraction opening radially outwards of the liquid supply opening and configured to extract fluid from the immersion space, wherein at least one fluid extraction opening is arranged as a fluid extraction shape defined by a plurality of sides and corners; and at least one gas supply opening radially outwards of the fluid extraction opening and configured to supply a gas to the immersion space; the at least one fluid extraction opening is separated from the substrate and/or substrate support by a first separation distance at the sides and by a second separation distance smaller than the first separation distance at least one of the corners.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The invention provides a method to correct a positioning measurement signal, the method comprising the steps of: a) obtaining a first positioning measurement signal; b) determining a first vibrational mode of the second element with respect to the first element; c) determining first modal displacement; d) determining a first sensitivity coefficient; e) multiplying the first modal displacement with the first sensitivity coefficient; f) correcting the first positioning measurement signal The invention furthermore provides a position control system for positioning an operative point at a position in space, wherein the position control system is configured to: A. determine a first vibrational mode B. determine first modal displacement C. determine a first sensitivity coefficient D. multiply the first modal displacement with the first sensitivity coefficient to obtain a first correction value; E. control an actuator to position the operative point at a desired position.
A radiation source has a source of target material configured to direct a target material to a plasma formation location, and a radiation source housing with an opening through which EUV radiation can exit the radiation source. A laser system is configured to direct an infrared radiation beam at the plasma formation location to generate EUV radiation when the infrared radiation beam is incident on the target material. The radiation source is configured such that a first portion of the radiation source housing receives a majority of the infrared radiation beam when the infrared radiation beam is not incident upon the target material, and wherein the first portion of the radiation source housing is configured to reflect the infrared radiation from the infrared radiation beam to other portions of the housing which are further away from the opening of the radiation source housing than the first portion.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
26.
METHOD OF FORMING A SEMICONDUCTOR CHANNEL AND ASSOCIATED APPARATUS
The disclosure provides a method of forming at least one semiconductor channel for a semiconductor device on a semiconductor substrate. The method comprises: defining at least one recess area within a dielectric layer on said semiconductor substrate; etching said at least one recess area in at least on etching step to obtain at least one recess in said layer; and growing 2D material within said recess to form said semiconductor channel; wherein said steps are performed in situ on said semiconductor substrate where the semiconductor device is to be formed.
Cloin, Christian, Gerardus, Norbertus, Hendricus, Marie
Marvi, Zahra
Van Der Wilk, Ronald
Heijmans, Lucas, Christiaan, Johan
Jansen, Paul
Abstract
An electrostatic clamp system for a component in a lithographic apparatus, the electrostatic clamp system comprising: an electrostatic clamp; at least one electrode associated with the electrostatic clamp; and a measurement circuit configured to measure an AC signal from the at least one electrode indicative of a varying potential of the component.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
28.
METHOD TO DETERMINE GHOST REFLECTIONS IN AN INTERFEROMETER SYSTEM, INTERFEROMETER SYSTEM, PROJECTION SYSTEM AND EXPOSURE APPARATUS
A method to determine ghost reflections in an interferometer system, comprising: providing a first light beam with a fixed light frequency from a first light source; providing a second light beam with a changeable light frequency from a second light source; guiding the first and second light beams at least partially along a first measurement axis to a reflective measurement surface arranged on a first movable object to obtain first and second interferometer signals, while changing the frequency of the second light frequency, detecting at a light detector the first and second interferometer signals, using the first interferometer signal to maintain the movable object in a fixed position, measuring the second light frequency and/or a frequency change of the second light frequency, determining one or more ghost reflections using the second interferometer signal and the second light frequency and/or the frequency change of the second light frequency.
G01B 9/02003 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using beat frequencies
G01B 9/02004 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using frequency scans
G01B 9/02001 - Interferometers characterised by controlling or generating intrinsic radiation properties
G01B 9/02015 - Interferometers characterised by the beam path configuration
TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE (Germany)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Schweikert, Sven
Wiesweg, Florian
Dilissen, Ruben Hendrik C
Abstract
The present invention concerns an optical amplifier (2) for amplifying laser radiation (11) comprising a cavity (201) filled with a laser active gas, comprising a screen (205) having a surface arranged in the cavity (201), a camera (207) configured for monitoring the surface of the screen (205) and for providing image data, and an analysis unit (208) configured for detecting particles (300) deposited on the surface of the screen (205) based on the image data provided by the camera (207. The invention further concerns a for monitoring particle contamination in an optical amplifier (2) for amplifying laser radiation (11) comprising a cavity (201) filled with a laser active gas and a screen (205) having a surface arranged in the cavity (201), wherein a camera (207) monitors the surface of the screen (205) and provides image data and an analysis unit (208) detects particles (300) deposited on the surface of the screen (205) based on the image data provided by the camera (205).
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
H01S 3/034 - Optical devices within, or forming part of, the tube, e.g. windows, mirrors
H01S 3/03 - Constructional details of gas laser discharge tubes
G01N 21/94 - Investigating contamination, e.g. dust
H01S 3/036 - Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering or replenishingMeans for circulating the gas, e.g. for equalising the pressure within the tube
H01S 3/07 - Construction or shape of active medium consisting of a plurality of parts, e.g. segments
H01S 3/223 - Gases the active gas being polyatomic, i.e. containing two or more atoms
30.
A METHOD OF LITHOGRAPHY AND ASSOCIATED APPARATUSES
Disclosed is method of determining an actuatable correction for a lithographic process. The method comprises obtaining a modeled error and/or a requested correction, said modeled error relating to an error of said lithographic process and said requested correction comprising a requested correction for said modeled error; and determining said actuatable correction in dependence on from which layer the modeled error originates.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
31.
BEAM GUIDING DEVICE FOR GUIDING LASER RADIATION AND LITHOGRAPHY SYSTEM
TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE (Germany)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Fröhlich, Sascha
Schilling, Tom
Fröhlich, Benjamin
Gauder, Patrick
Done, Vamshidar
Abstract
The present invention concerns a beam guiding device (200) for guiding laser radiation, comprising a body (201) with an inner beam channel (202), an optical beam guiding element (205), in particular a mirror, that is arranged inside the beam channel and a bracket (203) for holding the body (201), wherein the body (201) is connected to the bracket (203) via a first flexure bearing (207), a second flexure bearing (208) and a revolute joint (209). The invention further concerns a lithography system (101), in particular extreme ultraviolet lithography system, comprising a drive laser (100) with a beam guiding device (200) as mentioned before.
G02B 7/00 - Mountings, adjusting means, or light-tight connections, for optical elements
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
G02B 7/198 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors with means for adjusting the mirror relative to its support
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G02B 27/64 - Imaging systems using optical elements for stabilisation of the lateral and angular position of the image
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
There is provided a debris trap structure for an EUV source or EUV utilization apparatus, the debris trap structure including at least one of: i) a heater configured to provide a surface of the debris trap structure at a temperature 100˚C or above; ii) a surface comprising a getter material for tin or lithium; and/or iii) a surface configured to suppress forward scattering of debris. Further provided is a lithographic system comprising an EUV source and an EUV lithographic apparatus comprising such a debris trap structure, sub-system, EUV source, or lithographic apparatus. Also described is a method of mitigating target material contamination in an EUV source or EUV utilization apparatus, the method including providing a debris trap structure and heating a surface of the debris trap structure to at least 100˚C.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
33.
BEAM GUIDING DEVICE FOR GUIDING LASER RADIATION AND LITHOGRAPHY SYSTEM
TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE (Germany)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Janssen, Toni Wil
Struycken, Alexander Matthijs
Gorecki, Dominik Eryk
Morhai, Patrick
Abstract
The present invention concerns a beam guiding device (200) for guiding laser radiation, comprising a body (201) with an inner beam channel (202) and an optical beam guiding element (205), in particular a mirror, that is arranged inside the beam channel (202), wherein at least one sleeve (210, 211) is arranged inside the beam channel (202) such that a gap (207) exists between an outer surface of the sleeve (210, 211) and an inner surface of the body (201) for thermally decoupling the sleeve (210, 211) from the body (201). The present invention further concerns a lithography system (101), in particular extreme ultraviolet lithography system, comprising a drive laser (100) with a beam guiding device (200) as mentioned before.
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A charged particle beam inspection method includes acquiring an image of an alignment mark during a constant velocity stage movement and performing alignment corrections prior to imaging a care area associated with the alignment mark. The alignment mark may be selected to be located on a straight path from a prior care area. The alignment mark may be selected such that it is separated from the care area by a predetermined minimum computation distance so that any alignment corrections may be performed during the constant velocity stage movement.
Measuring overlay using a microscope based sensor with dark-field fringe-based imaging is described. The signal from the sensor is an intensity modulated fringe pattern (e.g., an interference pattern) as generated through the cross-interference of two diffraction orders from the metrology target. A metrology target comprises a first metrology mark in a first layer of a patterned substrate (e.g., a semiconductor wafer) and a second metrology mark in a second layer. Parameters associated with the fringes of the intensity modulated fringe pattern are determined, and used to make robust overlay determinations that are compensated for in plane vibrations of the patterned substrate. Advantageously, overlay values for metrology targets are determined based on the parameters, using a multi-parameter optimization based inference of the overlay values for multiple metrology targets together with the parameters related to the diffraction model and the sensor disturbances.
In a semiconductor structure, metrology marks may be covered by non-planar layers, such as resist layers. A resist layer may have tilted or dished areas that distort radiation diffracted by the metrology marks. This reduces measurement accuracy for interferometer based systems. Advantageously, the present systems and methods use an imaging sensor such as a camera (instead of an interferometer) and local signal strength in the distorted diffracted radiation to generate accurate alignment, overlay, and/or other measurements. For example, a camera may generate a metrology signal in the form of an image, based on diffracted radiation received from a metrology mark in a layer of a patterned substrate. Local signal strength may be determined based on the image; and a position of the metrology mark may be determined based on the local signal strength. The local signal strength can be determined in various manners.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A masking module for a scanning lithographic apparatus. The masking module comprises at least two masking blades each configured to inhibit the transmission of at least a portion of electromagnetic radiation from a patterning device to a substrate during a scanning operation, wherein the at least two masking blades are in mechanical connection with one another. The masking module further comprises a driver configured to move the masking blades in a scanning direction during the scanning operation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A charged particle-optical module (200) for a plurality of charged particle-optical devices configured to direct charged particle beams along respective beam paths towards a sample location, the charged particle-optical module comprising: at least one emitter (21) arranged at an emission surface (80) of an emitter layer, each emitter configured to emit charged particles for a source beam; at least one extractor electrode (27) for the at least one emitter, wherein the at least one extractor electrode is planar and a beam aperture is defined in each extractor electrode for the charged particles emitted by the respective emitter; and a spacer (88) configured to space each extractor electrode from the emission surface, wherein the spacer is an electrical insulator and comprises an insulator surface (94) between the extractor electrode and the emission surface, wherein at least part of the insulator surface is angled relative to a direction perpendicular to the emission surface.
STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Netherlands)
UNIVERSITEIT VAN AMSTERDAM (Netherlands)
RIJKSUNIVERSITEIT GRONINGEN (Netherlands)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
De Lange, Stan Johannes Jacobus
Sheil, John
Versolato, Oscar, Oreste
Purvis, Michael, Anthony
Brown, Daniel, John, William
Abstract
A method of generating extreme ultraviolet (EUV) radiation comprising directing laser pulses of a laser beam onto tin targets to generate EUV emitting plasma, wherein the laser pulses have a duration of at least 150 ns and have a wavelength between 1.6 microns and 2.5 microns.
A charged particle-optical module 200 for a charged particle-optical device configured to direct a charged particle beam along a beam path towards a sample location, the charged particle-optical module comprising: an emitter 21 configured to emit a source beam of charged particles along a source path; a plurality of charged particle-optical plate elements 24-26 configured to operate on the source beam, wherein in each charged particle-optical plate element are defined: a beam aperture 266 configured for passage of the source beam; and a vent 46 configured to provide gas conductance through the charged particle-optical plate element, so as to maintain a vacuum within the charged particle-optical module; and a vacuum chamber in which are located the emitter and the plurality of charged particle-optical plate elements, the vacuum chamber configured to maintain, in use, a source underpressure.
An electrostatic clamp for clamping a substrate (e.g. a silicon wafer) comprises: a body; at least one central electrode; and at least one peripheral electrode. The body defines a surface and a plurality of protrusions (also known as burls) extend from the surface. The plurality of protrusions comprises a first, central set of protrusions and a second, peripheral set of protrusions. The at least one central electrode is adjacent the first, central set of protrusions and the at least one peripheral electrode is adjacent the second, peripheral set of protrusions. The second, peripheral set of protrusions extend farther from the surface than the first, central set of protrusions. That is the outermost burls have a greater height that the central burls. The second, peripheral set of protrusions may have a smaller stiffness than the first, central set of protrusions in a direction that is generally parallel to the protrusions.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
42.
PELLICLE MEMBRANE FOR AN EUV UTILIZATION APPARATUS AND METHOD OF MANUFACTURING THEREOF
There is provided a membrane for use as pellicle in EUV utilization apparatus, the membrane comprising randomly oriented non-coated carbon nanotubes having one or both of: i) an average diameter less than 5 nm and a bundle (average) diameter of less than 30 nm, wherein the Young's modulus of the membrane is larger than 10MPa; and ii) surface features that provide roughness to the nanotubes, such that relative movement of the CNT tubes in the film is substantially blocked or inhibited. Also provided is a pellicle for an EUV utilization apparatus, the pellicle including such a membrane and a support frame for supporting the membrane, as well as an EUV utilization apparatus comprising such a membrane or pellicle. There is also provided a method of manufacturing a membrane for an EUV utilization apparatus.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
43.
METROLOGY IMPROVEMENT FOR PATTERN-EDGE BASED MEASUREMENTS
A method for metrology may include receiving an inspection image of a structure on a sample, extracting a gray level value profile associated with the structure from the received inspection image, and determining a critical dimension of the structure from the extracted gray level value profile based on a threshold value. The threshold value may be determined from multiple gray level value profiles associated with the structure and may be indicative of gray level value at a location where a variation between different gray level value profiles of the multiple gray level value profiles is a minimum. And each gray level value profile of the multiple gray level value profiles may be associated with a different apparatus setting.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is an optical measurement system for measuring a topology of a surface of a substrate. The optical measurement system includes a light projector configured to project a light beam to the surface of the substrate and a light detector configured to receive the light beam from the light projector that has been reflected from the surface. It also includes a mirror relay comprising a convex mirror and a concave mirror arranged to reflect the light beam in a substantially radial direction and at least partially in a lateral direction to cause multiple lateral reflections between the concave mirror and the convex mirror that extend a path length of the light beam between the light projector and the light detector and increase a field of view of the optical measurement system at the surface.
The invention provides an acoustic damping device, comprising: an outer shell enclosing a flow channel having a first end to be connected to a liquid inlet and a second end to be connected to a liquid outlet, and an inner tube arranged within the outer shell, wherein a damping space is defined within the inner tube, 5 wherein the flow channel runs between the inner tube and the outer shell, and wherein the inner tube is at least partially made of elastic or viscoelastic material to damp pressure waves in fluid flowing through the flow channel.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed are systems and methods for producing extreme ultraviolet (EUV) radiation from a target material in a vessel in which gas flows carry target material vapor and debris and deposit some of the target material on surfaces within the vessel including interior surfaces of an exhaust port and in which measures are adopted to reduce the amount of deposited target material that is able to reenter the gas flows.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An electrostatic clamp is disclosed. The electrostatic clamp is for holding an object by electrostatic force. The clamp comprises a first conductive element and a second conductive element disposed between the first conductive element and a plane in which the object is held. The second conductive element is separated from the first conductive element by less than 100 micrometres. Also disclosed is a method of manufacturing an electrostatic clamp for holding an object by electrostatic force in a lithographic apparatus.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A method and system architecture for generating extreme ultraviolet (EUV) radiation. The method comprises directing laser pulses onto tin targets to generate plasma that emits EUV radiation. In some examples, the laser pulses are controlled to have a duration of at least 80 ns and a wavelength between 1.6 microns and 2.5 microns.
The present disclosure provides a laser system comprising: a transport system arranged to transport a laser beam along a beam path from an inlet to a target region, wherein the beam path is provided with a plurality of reflective optical elements comprising a substrate with a reflective coating thereupon, wherein the substrate is composed of porous or sintered ceramic, preferably alumina.
Disclosed is a method of bonding a first semiconductor substrate to a second semiconductor substrate, the method comprising: providing a stress-relieving coating to at least one of the first semiconductor substrate and the second semiconductor substrate; and bonding the first semiconductor substrate to the second semiconductor substrate to form a bonded substrate; wherein the stress-relieving coating is configured to enhance a bonding strength between the first semiconductor substrate and the second semiconductor substrate and reduce an amount of bonding-induced stress in the bonded substrate.
Semiconductor bonding with better placement accuracy and/or higher throughputs compared to prior systems is described. A track comprising a path through a plurality of process stations is used. A plurality of substrate holders are coupled to the track. Each substrate holder is configured to receive and hold a first substrate, and move the first substrate along the path through the plurality of process stations to enable the first substrate to be bonded to a second substrate. A controller is coupled to the track and the plurality of substrate holders. The controller is configured to control relative motion between the plurality of substrate holders to cause each substrate holder to move along the path through the plurality of process stations independently of other substrate holders, with ranges and speeds for each substrate holder that vary according to track position relative to the plurality of process stations.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
A charged particle-optical module (200) for a plurality of charged particle-optical devices configured to direct charged particle beams along respective beam paths towards a sample location, the charged particle-optical module comprises: a plurality of emitters (21) configured to emit respective source beams of charged particles along respective source paths; and a plurality of charged particle-optical plate elements (24-26) configured to operate on the source beams and in which are defined a plurality of beam apertures (266) configured for passage of the source beams, wherein at least one of the charged particle-optical plate elements are common to a plurality of the emitters, wherein the charged particle-optical plate elements comprise an extractor arrangement (25) configured to operate on the source beams individually.
Deformation measurement of a clamped object (e.g., a reticle, water, etc.) with an integrated optics near-field sensor is described. The sensor is configured to sense interaction between an electromagnetic field of the sensor and the object. Sensor output is used to determine a gap distance to the object based on the interaction. Changes in the electromagnetic field caused by gap distance changes result in changes in the output from the sensor. With a plurality of sensors, several gap distances at a plurality of locations can be determined, which collectively indicate deformation of the object. The measured deformation can be used to adjust (e.g., in real-time or otherwise) semiconductor patterning and/or other manufacturing processes, for example.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN (Netherlands)
STICHTING VU (Netherlands)
UNIVERSITEIT VAN AMSTERDAM (Netherlands)
RIJKSUNIVERSITEIT GRONINGEN (Netherlands)
ASML NETHERLANDS B.V. (Netherlands)
Inventor
Versolato, Oscar, Oreste
Mulder, Heine, Melle
Engels, Dion, Junior
Abstract
A laser system arranged to irradiate a fuel target at a target destination with a laser pulse. The laser system is arranged to produce a plurality of sub-pulses of predetermined pulse length that are temporally combined to form the laser pulse having a specific duration. The laser system further comprises at least one optical element arranged to spatially separate each of the sub-pulses to be incident on the fuel target at corresponding target destinations.
Disclosed are systems and methods for producing extreme ultraviolet (EUV) radiation from a target material in a source vessel in which gas flows carry target material vapor and deposit some of the target material on surfaces within the vessel where the target material accumulates and in which measures are adopted to reduce the amount of deposited target material that is able to reenter the gas flows.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
A charged particle-optical module (200) for a charged particle-optical device configured to direct charged particle beams along respective beam paths towards a sample location, the charged particle-optical module comprising: an emitter (21) configured to emit a source beam of charged particles; a plurality of charged particle-optical plate elements (24-26) configured to operate on the source beams and defining a plurality of beam apertures (266) for passage of the source beam; and a spacer (33) configured to space two of the charged particle-optical plate elements from each other, wherein the spacer comprises at least one interface surface that interfaces with one of the charged particle-optical plate elements, the interface surface being planar.
A charged particle-optical module for at least one charged particle-optical device configured to direct charged particle beams along respective beam paths towards a sample location, the charged particle-optical module comprising: an emitter (21) configured to emit a source beam of charged particles; a plurality of charged particle-optical plate elements (24,27,26) configured to operate on the source beam and in which are defined a plurality of beam apertures (266) configured for passage of the source beam; and one or more spacers (36,33) configured to space charged particle-optical plate elements from each other, wherein at least one of the charged particle-optical plate elements comprises at least one damper (41,42,97) located between a beam aperture and the spacer, the damper configured to reduce charged particles 96 from the beam aperture reaching as far from the beam aperture as the spacer is away from the beam aperture.
A charged particle-optical module (200) for a plurality of charged particle-optical devices configured to direct charged particle beams along respective beam paths towards a sample location, the charged particle-optical module comprising: a plurality of emitters (21) configured to emit respective source beams of charged particles along respective source paths; and a plurality of charged particle-optical plate elements (24-26) configured to operate on the source beams and in which are defined a plurality of beam apertures (266) configured for passage of the source beams, wherein at least one of the charged particle-optical plate elements (24-26) is common to a plurality of the emitters, wherein one (25) of the planar charged particle-optical elements comprises separate electrodes (27) for different emitters (21) and is configured to control a current density of the respective source beams.
2532532533; crystals in the film; and ii) a multi-layered microstructure. Also described is a pellicle assembly for an exposure apparatus, such as a lithographic apparatus, the pellicle assembly including such a pellicle film and a support frame for supporting the pellicle film. There is also provided an exposure apparatus comprising such a pellicle or pellicle film. A method of manufacturing a pellicle film, wherein the method comprises deposition of material layers to form a pellicle film according to the invention.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
60.
INSPECTION APPARATUS WITH TIME DOMAIN MULTIPLEXING FOR MULTIPLE WAVELENGTHS AND INSPECTION SYSTEM WITH MULTIPLEXED PARALLEL SENSORS
A lithographic apparatus (100) includes a projection system and an inspection apparatus (400). The projection system projects an image of structures of a patterning device onto a substrate (420). The inspection apparatus (400) includes a photodetector (426), a demultiplexer (428), and an illuminator section with a multiplexer (506). The illuminator section directs a beam of illumination toward a target on the substrate. The multiplexer (506) transmits first and second portions of the beam via first and second pulses (510', 512', 514'), respectively. The first portion has a first illumination parameter and the second portion has a second illumination parameter. The multiplexer (506) interleaves, in time, the first and second pulses (5101, 512', 514'). The photodetector (426) receives pulses of scattered illumination from the target to generate a measurement signal based on the pulses of the scattered illumination. The demultiplexer (428) analyses the measurement signal to discriminate portions of the measurement signal according to illumination parameter based on timing of the pulses of the scattered illumination.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed herein is a film for a lithographic apparatus, the film comprising a plurality of nanotubes, wherein the plurality of nanotubes comprises silicon-based nanotubes for filtering undesired radiation. Further disclosed is a film assembly comprising such a film and a structure configured to support the film. Also disclosed is a method of manufacturing the film comprising fabricating a plurality of nanotubes and arranging the nanotubes to form the film.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An apparatus of a Mangin mirror including a planar front surface and a back surface with a plurality of facets. A second mirror to direct a path of illumination and a detector, wherein the Mangin mirror to receive an a plurality of radiation beams at the planar front surface, wherein a first set of the plurality of radiation beams are partially reflected by the planar front side and directed toward the second mirror, and a second set of the plurality of radiation beams are reflected by the plurality of facets to exit the Mangin mirror through the planar front surface and directed toward the second mirror positioned to redirect the first and second set of radiation beams towards the detector, and wherein the planar front surface and the plurality of facets are coated for the first set of beams to be four times of the second set of beams.
A patterning device support system for use in a lithographic apparatus comprising: a patterning device support configured to support a patterning device having a patterning surface and a clamping surface facing the patterning device support; one or more conductive members configured to be electrically connected to the clamping surface while the patterning device is clamped to the patterning device support; a conductive member voltage source configured to apply a voltage to the one or more conductive members; and a controller configured to control voltage applied to the one or more conductive members, wherein, during loading of the patterning device onto the patterning device support, the controller is configured to control the voltage applied to be a load-conductive member voltage, wherein the load-conductive member voltage reduces a potential difference between the clamping surface and one or more conductive members relative to a case where one or more conductive members are grounded.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
64.
ACTUATOR AND LITHOGRAPHIC, SUBSTRATE INSPECTION OR WAFER METROLOGY APPARATUS
An actuator comprises a coil and a magnet arrangement. The coil is arranged in a plane defined by first and second directions, wherein main coil portions of the coil extends in the first direction, The magnet arrangement comprises first and second magnet portions arranged at opposite sides of the coil, each magnet portion comprises a central magnet unit and an edge magnet unit having different polarization directions. The central magnet units of the two magnet portions are substantially aligned in a third direction perpendicular to the plane of the coil, and each with a polarization direction in the third direction wherein the polarization directions of the central magnet units of the two magnet portions are opposite to each other. The magnet arrangement is configured to generate a primary magnetic flux substantially transverse the main coil portions in the second direction.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present disclosure relates to an electrostatic clamp for a lithographic apparatus comprising a clamp body; a generally planar electrode arrangement comprising: a plurality of electrodes, arranged in a plurality of segments; and one or more connecting layers, configured to allow individual address of the plurality of electrodes; a plurality of burls projecting from the clamp body; and one or more demultiplexers in electrical communication with the one or more connecting layers, wherein the one or more demultiplexers are configured to sequentially address selections of the plurality of electrodes with a voltage source, thereby providing voltages to the selected electrodes.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
66.
LITHOGRAPHIC APPARATUS, CALIBRATION RETICLE, CALIBRATION METHOD AND DEVICE MANUFACTURING METHOD
A lithographic apparatus is described, the apparatus comprising: a patterning device holder for a patterning device configured to impart a pattern to a beam of radiation; a substrate holder configured to hold a substrate; and a projection system configured to project the beam of radiation onto the substrate holder; a plurality of reference markers associated with the patterning device holder; and a sensor apparatus associated with the substrate holder, the sensor apparatus having a periodic pattern having a nominal pitch; wherein the plurality of reference markers includes a first reference marker having a first pitch corresponding to the nominal pitch and a second reference marker having a second pitch corresponding to the sum of the nominal pitch and an error offset value.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is a metrology apparatus and method. The method comprises obtaining metrology data relating to a measurement obtained by illuminating a periodic structure comprising at least one pitch with illumination comprising a wavelength and capturing at least a plurality of components of interest of said scattered radiation from said periodic structure at a detection image plane, said illumination comprising at least one incoherent dipole, each said incoherent dipole comprising two mutually incoherent monopoles, said scattered radiation passing through at least one angularly resolved plane between said periodic structure and detection image plane; selecting said wavelength and each said at least one pitch such that that mutually coherent interfering components of said components of interest are equidistant to an optical axis of said at least one angularly resolved plane; and determining a parameter of interest of the periodic structure from said scattered radiation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
68.
A METHOD FOR DETERMINING A LINEAR MOTOR COMMUTATION ANGLE
Van Den Boogaert, Erwin, Antonius, Henricus, Franciscus
Van Den Bulk, John, David, Johannes, Maria
Kunst, Ronald, Casper
Abstract
A method for determining a commutation angle of a permanent magnetic linear motor comprising a coil array and a mover physically connected to a moving body, the method comprising: applying to the coil array a first set of currents, adapting a phase offset of the first set of currents until the moving body reaches a first stationary condition with a first settled phase offset and a first actuation force, determining an estimated second actuation force, applying to the coil array and varying a second set of currents thereby transitioning the actuation force from the first actuation force to the estimated second actuation force via one or more intermediate force setpoints, further adapting the phase offset of the second set of currents until the moving body reaches a second stationary condition with a second settled phase offset, determining the commutation angle based on the first and the second settled phase offset.
H02P 25/064 - Linear motors of the synchronous type
H02P 6/00 - Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor positionElectronic commutators therefor
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H02K 41/03 - Synchronous motorsMotors moving step by stepReluctance motors
H02P 23/14 - Estimation or adaptation of motor parameters, e.g. rotor time constant, flux, speed, current or voltage
69.
SYSTEMS AND METHODS FOR ESTIMATING LINE EDGE VARIABILITY AND OPTIMIZING WAFER PRINTING USING POWER SPECTRAL DENSITY
PSDLER,measuredLER,measured crossPSDpitch,measuredPSDpitch,measured PSDLER,waLER,wa ƒerer PSDLER,measuredLER,measured crossPSDpitch-measuredpitch-measured PSDLER,waLER,wa ƒerer er of the plurality of lines.
Reference image data of a sample, for comparison with detected image data from a multi-beam charged particle system using a plurality of charged particle beams, comprises a combination of: main image data extracted from image data of the sample covering a same area as a local charged particle beam, the local charged particle beam being one of the charged particle beams; and cross talk image data extracted from the image data of the sample covering a same area as at least one neighboring charged particle beam, a neighboring charged particle beam being another of the charged particle beams neighboring the local charged particle beam.
A carrier for one or more semiconductor dies, the carrier comprising: a carrier substrate comprising one or more openings; and a flexible membrane, the flexible membrane configured to temporarily support the one or more semiconductor dies and to expand to create one or more blisters, wherein the one or more openings are arranged to release pressure from the one or more blisters.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
72.
METHODS AND SYSTEMS FOR RETICLE CONDITIONING AND THERMAL MODELING TO IMPROVE RETICLE HEATING STABILITY
A method of reducing non-uniform thermomechanical effects of a reticle in a lithographic process includes conditioning the reticle on a reticle handler to adjust or maintain a temperature of the reticle, determining a temperature distribution of the reticle based on the conditioning, calibrating a reticle heating model based at least in part on the temperature distribution, and reducing a non-uniformity of the reticle based on the calibrated reticle heating model. Advantageously the method can reduce and/or compensate for non-uniform thermomechanical effects of the reticle, account for different reticle usage sequences, reduce conditioning times of the reticle, increase thermal stability of the reticle, increase calibration accuracy and speed of a reticle heating model, avoid rework of substrates, decrease overlay errors, increase throughput, and increase yield and accuracy of the lithographic process.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present disclosure provides an object table intermediate body, comprising: a body having a top surface area for supporting an object and a bottom surface area configured to be supported by an object table; the top surface area being provided with a reduced pressure zone, the reduced pressure zone being connectable to a vacuum connector for providing a reduced pressure, wherein the bottom surface area is substantially flat and the top surface area is curved.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
The invention provides a Lorentz type permanent magnet motor comprising a permanent magnet motor, comprising at least one coil assembly and at least one magnet assembly. The at least one magnet assembly comprises a first magnet group comprising two or more primary magnets extending along a first direction and a second magnet group comprising two secondary magnets extending along a second direction which is perpendicular to the first direction. The two or more primary magnets are placed adjacent to each other along the second direction and have alternating polarization directions. A secondary magnet is arranged on each end with respect to the first direction of the first magnet group. The secondary magnets of the second magnet group overlap with at least part of a turning section of the at least one coil assembly seen from a third direction which is perpendicular to the first direction and the second direction.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
75.
METHOD OF DETERMINING A SAMPLING SCHEME. ASSOCIATED APPARATUS AND COMPUTER PROGRAM
Disclosed is a method of configuring a sampling scheme for a metrology operation comprising: obtaining metrology data relating to measurements on a substrate; fitting a first model to the metrology data to obtain a first fitted model; evaluating the first fitted model on an evaluation grid; calculating a noise propagation coefficient for each candidate measurement location of a plurality of candidate measurement locations based on said evaluation, and configuring the sampling scheme based on the calculation step.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
76.
COUNTERACTING INTERFERING MAGNETIC FIELDS IN A CHARGED-PARTICLE BEAM SYSTEM
An apparatus for generating a counteracting magnetic field for a charged-particle beam apparatus comprises a coil, individual coils or pairs of coils spaced apart and arranged about each one of an X axis, a Y axis, or a Z axis. A controller may be configured to control the pairs of coils to generate a substantially uniform magnetic field at a central location between the pairs of coils.
A metrology tool for determining one or more parameters of interest (e.g. overlay) of a structure on an object (e.g. a wafer). The metrology tool comprises: a module for at least partially defining an aperture; projection optics; detection optics; and a detector. The module for at least partially defining an aperture is positionable so as to receive a radiation beam and to transmit a modified radiation beam. The projection optics is arranged to project modified radiation output by the module onto a beam spot region in which the structure is positionable. The detection optics is arranged to receive at least a portion of radiation scattered by the structure. The detector is operable to determine one or more parameters from the received scattered radiation. The module is configured such that a size and/or shape of the aperture defined by the module is dependent on a wavelength of the received radiation.
DD) smaller than 095, preferably smaller than 0.8, particularly preferred smaller than 0,4 at a roll-off frequency in the range of 0–3000 Hz, preferably in a range of 0-1000 Hz, particularly preferred in a range of 0–500 Hz. Additionally, the invention relates to a semiconductor apparatus (1,101), preferably a projections exposure apparatus (1,101), particularly preferred a EUV projection exposure apparatus (1) comprising at least one assembly (70) according to one the described embodiments. Furthermore, the invention also refers to a method for designing a pipe (76) for an assembly (70) for a fluid line (39,42,43) for a semiconductor apparatus (1,101) comprising at least one damping section (72) to damp acoustic vibrations within a fluid (79), the damping section (72) comprising the pipe (76) comprising a viscoelastic material the method comprising the following steps: - Determining a desired transfer factor VD and a desired roll-off frequency frolloff for a given fluid, - Determining a material frequency fmaterial based on the roll-off frequency frolloff and the transfer factor VD, - Determining the material and geometric parameters of the pipe (76) in such a way that the equation (A) applies, whereby (B).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
F16L 11/115 - Hoses, i.e. flexible pipes made of rubber or flexible plastics with corrugated wall having reinforcements not embedded in the wall
79.
METHOD AND SYSTEM FOR EUV ENERGY ADJUSTMENT VIA RAREFACTION PULSE ADJUSTMENT
A method can adjust an extreme ultraviolet (EUV) energy output of an EUV light generation system. The method can include irradiating a droplet with a pre-pulse laser beam suitable to reshape the droplet into a target. The method can further include irradiating the target with a rarefaction pulse laser beam suitable to modify one or more of a density of the target or an absorption characteristic of the target. The method can further include irradiating the modified target with a main pulse laser beam suitable to generate EUV light. The method can further include measuring an EUV energy output of the EUV light with a sensor. The method can further include adjusting at least one of the rarefaction pulse laser beam or the main pulse laser beam in response to the measured EUV energy output.
Disclosed is a method of monitoring an exposure process, comprising: obtaining a set of first monitoring data relating to a performance of a monitoring action of the exposure process using at least one first reference structure, the at least one first reference structure being in use for the monitoring action during exposures; obtaining at least one set of second monitoring data relating to a performance of the monitoring action of the exposure process using at least one second reference structure, the at least one second reference structure not being in use for the monitoring action during exposures; comparing the set of first monitoring data to the at least one set of second monitoring data; and determining, based on the comparing, whether to change from the at least first reference structure to the at least one second reference structure for the monitoring action during further exposures
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Disclosed is a metrology apparatus and method. The method comprises: obtaining metrology data relating to a measurement obtained by illuminating a periodic structure with illumination and capturing the resultant scattered radiation from said periodic structure at a detection plane, said scattered radiation passing through at least one detection angularly resolved plane between said periodic structure and detection plane, wherein said illumination comprises an even plurality of monopoles arranged within an illumination angularly resolved plane in one or more coherence groups, wherein each coherence group comprises a respective at least one mutually coherent dipole of said even plurality of monopoles which are all mutually coherent and wherein zeroth order reflection corresponding to all but one monopole for each said one or more coherence groups is blocked or attenuated within said detection angularly resolved plane; non-iteratively reconstructing a field of said scattered radiation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
82.
FORMING A REFERENCE IRRADIANCE PATTERN ON A DETECTOR
Described herein is a method comprising: illuminating an optical element with a reference illumination, wherein the optical element is configured to produce, from the reference illumination, a plurality of reference irradiance beams incident on a detector to form a reference irradiance pattern on the detector, the reference irradiance pattern comprising a plurality of reference irradiance spots; and determining a position related parameter of the detector relative to the optical element based on the plurality of reference irradiance spots. A computer program product is also described. Additionally described herein is an apparatus comprising a processor configured to determine a position related parameter of a detector relative to an optical element based on a plurality of reference irradiance spots.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H04N 23/54 - Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
83.
IMPROVEMENTS TO LITHOGRAPHIC METHODS AND APPARATUS
A new (lithographic) method of forming a feature on a substrate (e.g. a wafer) comprises performing a plurality of sequential exposures, each of the plurality of exposures comprising forming an image of the feature in the vicinity of the substrate. A focal position of the image relative to the substrate is different for at least two of the plurality of exposures. There is a range of focal positions of the image relative to the substrate that is not used during any of the plurality of exposures and which lies between the focal positions of the image relative to the substrate for two of the plurality of exposures. The method according to the first aspect of the present disclosure is particularly advantageous for forming isolated features on a substrate such as isolated contacts and isolated spaces.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is a method of determining at least one bonding parameter of interest relating to a feature on a substrate comprising: obtaining angularly resolved metrology data relating to a measurement of said feature following illumination of said feature with a radiation beam and detecting radiation scattered by said feature at an angularly resolved plane; obtaining at least one trained model being operable to relate said angularly resolved metrology data to said bonding parameter of interest; and using the trained model to derive the bonding parameter of interest based on the angularly resolved metrology data.
H01L 21/66 - Testing or measuring during manufacture or treatment
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
85.
MAINTAINING AN OPTICAL FOCUS OF AN OPTICAL ELEMENT FOR IMPROVING PERFORMANCE OF A METROLOGY SYSTEM
A system includes an optical element, a distance sensor, a controller, and an actuator. The optical element faces a wafer. The optical element is spaced apart from the wafer by a focus distance. The distance sensor can measure a distance to the wafer. The distance sensor can be positioned off axis with respect to an optical axis of the optical element. The controller can be coupled to the actuator and can be configured to generate a control signal to maintain the focus distance. The control signal can be generated based on the measured distance by the distance sensor. The actuator coupled to the optical element and configured to control a position of the optical element based on the control signal.
An interferometer system comprises: - first and second splitters to split first and second beams received from first and second input terminals in first measurement and reference beams and second measurement and reference beams - a second combiner to combine the second measurement and reference beams and to direct the combined beams to a second detector, - a coupling out device to direct the first measurement beam to a retro reflector, a coupling in device to receive the first measurement beam reflected by the retroreflector, - a first combiner to combine the first measurement beam received via a first measurement beam propagation path from the coupling in device and the first reference beam received from the second splitter via a first reference beam propagation path, and to direct the combined measurement beams to a first detector.
G01B 9/02015 - Interferometers characterised by the beam path configuration
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Disclosed is a metrology method comprising: obtaining metrology data relating to a measurement obtained by illuminating a periodic structure comprising at least one pitch with partial coherent illumination comprising a wavelength and capturing the resultant scattered radiation from said periodic structure at a detection plane, said scattered radiation passing through at least one angularly resolved plane between said periodic structure and detection plane, said angularly resolved plane comprising at least one mask edge; non-iteratively reconstructing a field of said scattered radiation; using said reconstructed field to determine a parameter of interest of the structure; and in an initial step: selecting said wavelength and a maximum of said at least one pitch such that the wavelength- over-pitch ratio is greater than a first distance in said angularly resolved plane.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
88.
APPARATUS AND METHOD FOR SECURING A DIE FOR DIE BONDING
An apparatus and method for securing an at least partially transparent carrier to a chuck are provided, wherein the chuck and/or chucking mechanism is at least locally substantially transparent to radiation used to release one or more donor die from the carrier.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
89.
LITHOGRAPHIC APPARATUS AND METHOD WITH FAST ALIGNMENT MEASUREMENTS USING DEFORMATION PREDICTION MODELS
A lithographic apparatus includes an illumination system, a substrate support structure including a sensor, and a computing system. The illumination system generates a beam of radiation to illuminate a pattern of a patterning device. The patterning device includes reference marks. The substrate support structure performs alignment operations of substrates during fabrication cycles. Each of the fabrication cycles comprises an exposure operation on a substrate and a substrate alignment operation. The sensor performs measurements of the reference marks for the substrate alignment operation of each of the fabrication cycles. The computing system forecasts a distortion of the patterning device using a distortion prediction model and one or more parameters of the beam. The computing system also prompts the sensor to waive one or more of the measurements. The computing system also adjusts the alignment operations using the forecasted distortion to offset the waived one or more of the measurements.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
90.
SYSTEMS AND METHODS OF ENERGY-BASED FILTERING AND DETECTION OF CHARGED PARTICLES
Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may comprise an energy discrimination device configured to filter incoming signal charged-particles having a plurality of ranges of energy levels. The energy discrimination device may include an electromagnetic charged-particle deflector configured to deflect a path of the incoming signal charged-particles based on an energy level of the incoming signal charged-particles; an aperture formed on an aperture plane, the aperture configured to allow a portion of the incoming signal charged-particles exiting the electromagnetic charged-particle deflector to pass through based on the deflection; and a control lens located upstream from the electromagnetic charged-particle deflector and configured to focus the incoming signal charged-particles on the aperture plane.
A metrology apparatus includes an optical component, a wafer, a sensor, and a processor. The optical component, which can actuate between multiple aberration modes, provides a wavefront correction to light incident on the optical component. Light reflected and/or transmitted by the optical component is scattered by a target on the wafer. The scattered light forms a measurement signal that is collected by a sensor. The processor uses the measurement signal to determine an aberration correction for the optical component.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
92.
AN ILLUMINATION AND DETECTION ARRANGEMENT AND A METHOD FOR A METROLOGY ARRANGEMENT
Disclosed is an illumination and detection arrangement for a lithographic or inspection apparatus, comprising: a plurality of individually configurable illumination sources located in an illumination plane, each being operable to emit illumination radiation; an objective lens defining an objective NA area and configured to receive the illumination radiation, focus it onto a structure in an object plane, and subsequently collect radiation scattered from the structure upon illumination; and at least one image sensor located in a detection plane and configured to detect at least one portion of the scattered radiation collected by the objective lens and record an image associated with the structure; wherein the at least one portion of the scattered radiation either is detected at or passes through the illumination plane.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An apparatus for use in a metrology apparatus comprises: selection optics; and a plurality of beam-modifying modules. The selection optics is arranged to receive an input radiation beam and is configurable so as direct the radiation beam to any one of the plurality of beam-modifying modules. Each of the plurality of beam-modifying modules is arranged to control the same at least one attribute of the radiation beam (for example wavelength, polarization, size, shape etc.). The selection optics may be arranged to receive secondary radiation output by any one of the plurality of beam-modifying modules and may be configurable so as direct the secondary radiation received from any one of the plurality of beam-modifying modules to a common output. A timescale for switching between two configurations of any one of the beam-modifying module may be larger than a timescale for switching between two configurations of the selection optics.
The present disclosure provides an interferometer system, comprising: an input terminal configured to receive an input beam from a source of radiation, a polarizing beam splitter which is configured to reflect a first portion of the input beam to follow a measurement path and to reflect a second portion of the input beam to follow a reference path, wherein the measurement path is directed towards a first optical reflector mounted on a movable measurement target and back to the beam splitter, then towards a translating reflector and back to the beam splitter, and wherein the reference path is directed towards the translating reflector and back to the beam splitter.
G01B 9/02018 - Multipass interferometers, e.g. double-pass
G01B 9/02061 - Reduction or prevention of effects of tilts or misalignment
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
95.
DOSAGE-CONTROLLED VOLTAGE CONTRAST INSPECTION IN CHARGED-PARTICLE BEAM SYSTEMS AND METHODS THEREOF
Systems and methods (400; 700) of detecting a defect (638) in a sample (250) using a charged-particle beam apparatus are disclosed. A method (400; 700) for inspecting a sample (250) using a charged-particle beam apparatus includes causing a region of the sample (250) comprising a plurality of features (632) to be charged to a first polarity, causing the region to switch from the first polarity to a second polarity at a switching condition, the switching condition comprising a switching dosage of primary charged particles, forming an inspection image of the region from signal charged particles generated upon interaction of the switching dosage of primary charged particles with the plurality of features (632), and determining whether a feature (632) of the plurality of features (632) is defective based on a gray level value of the feature (632) in the inspection image.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G01R 31/307 - Contactless testing using electron beams of integrated circuits
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
H01L 21/66 - Testing or measuring during manufacture or treatment
96.
SYSTEMS AND METHODS FOR GUIDED TEMPLATE MATCHING IN METROLOGY SYSTEMS
Systems and methods for guided template matching may include generating an image of a sample; per unit cell of the image, determining a size of a corresponding feature of the sample of the image; generating a template of each feature of the sample based on the determined size of the corresponding feature; matching the template to the corresponding feature of the image using a dynamic updating of the template with a range of adjustment factors; generating a final template based on the matching; and calculating a position of each feature based on the final template.
G06V 10/75 - Organisation of the matching processes, e.g. simultaneous or sequential comparisons of image or video featuresCoarse-fine approaches, e.g. multi-scale approachesImage or video pattern matchingProximity measures in feature spaces using context analysisSelection of dictionaries
G06V 10/25 - Determination of region of interest [ROI] or a volume of interest [VOI]
G06V 10/26 - Segmentation of patterns in the image fieldCutting or merging of image elements to establish the pattern region, e.g. clustering-based techniquesDetection of occlusion
A collector mirror (21) for lithography has a mirror substrate body (22) comprising a mirror basic body (23) and at least one mirror holding section (25). The mirror basic body (23) has a mirror reflection surface (24) for illumination light (4). The mirror holding section (25) is integrally formed with the mirror basic body (23). The mirror substrate body (22) has at the mirror holding section (25) a holding section wall thickness (H) which differs from a further wall thickness (W) of the mirror substrate body (22). A collector mirror assembly includes a collector mirror basic body with a basic body reflection surface for illumination light and a supporting body to mount the basic mirror body. The mirror basic body is mounted floating relative to the supporting body. A collector mirror and a collector mirror assembly including a mirror supporting body result with an improved reproducibility of a position relationship between such collector mirror on the one hand and a light source and/or a mirror supporting body on the other.
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
A method of managing overlay impact caused by deformation of one or more encoder scales due to thermal impact of loading a reticle onto a reticle stage, the method comprising: obtaining data on a thermal profile of a reticle; simulating deformation of the one or more reticle stage encoder scales upon loading the reticle onto the reticle stage based on the thermal profile of the reticle to determine an impact the deformation will have on a patterning process; calculating, based on said simulation, a correction factor to correct the patterning process to manage the overlay impact, and applying correction factor to manage the overlay impact. Also provided is a method of imaging a substrate, a system, a device, and a non-transitory computer-readable medium configured to perform or execute such a method. Also disclosed is an apparatus for managing overlay impact as the use in a lithographic system, apparatus or method.
A method of measuring a tilt characteristic and a height characteristic in a charged particle system is disclosed. Time-division multiplexing may be employed to temporally separate measurements of a tilt characteristic and a height characteristic of a sample using one module. A first light beam may be reflected off a sample to measure a tilt characteristic and a second light beam may be reflected off a sample to measure a height characteristic. The first light beam may be triggered by an electrical signal associated with a falling edge of a clock signal and the second light beam may be triggered by an electrical signal associated with a rising edge of a clock signal.
A method of performing image position measurements. The method comprises performing an image position measurement in at least partial dependence upon an estimated image position and a measurement location uncertainty to determine a measured image position. The method comprises determining an image position error in at least partial dependence upon the measured image position 5 and the estimated image position. The method comprises determining an adapted measurement location uncertainty in at least partial dependence upon the image position error. The method comprises performing another image position measurement in at least partial dependence upon the adapted measurement location uncertainty.
patents
