Methods and systems for training a prediction model to predict a mask image in which mask rule check (MRC) violations or process violations (e.g., edge placement error, sub-resolution assist feature (SRAF) printing) are minimized or eliminated. The prediction model is trained based on a loss function that is indicative of (a) a difference between the predicted mask image and a reference image, and (b) at least one selected from: an MRC evaluation of the predicted mask image or an evaluation of a simulated image of the predicted mask image.
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
2.
PICTURE MODE RESOLUTION ENHANCEMENT FOR E-BEAM DETECTOR
A charged particle detector includes a plurality of sensing elements, with each sensing element being further divided into sub-sensing elements. The sub-sensing elements may be individually addressed during high-resolution image acquisition in a picture mode, and may be grouped together during high speed detection in a beam mode. The arrangement allows a selectable tradeoff between speed and resolution without introducing significant parasitic parameters.
A structure including a first grating at a first pitch in a first layer of a multi-layer stack structure; and a second grating at a second pitch in a second layer of the multi-layer stack structure, wherein, when illuminated by incident radiation, scattered radiation from the measurement structure forms an interference pattern at a detector, wherein the interference pattern includes at least a first Moire interference component and a second Moire interference component. A method for measuring a parameter of interest in a manufacturing process based on the measurement structure, which includes obtaining an interference pattern for the measurement structure, identifying a first Moire interference component and identifying a second Moire interference component in the interference pattern; and determining the measurement of a parameter of interest based on the first Moire interference component and the second Moire interference component.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
A charged particle-optical assembly manipulates one or more charged particle beams. The assembly includes: an upbeam element, a downbeam element and an isolating spacer. The upbeam and down beam elements each include a plate having one or more apertures around a beam path of one or more charged particle beams. The spacer is for electrically isolating the upbeam element and the element from each other. The spacer defines a spacer aperture around the beam path of the one or more charged particle beams. The spacer includes an upbeam portion adjacent to the upbeam element, a downbeam portion adjacent to the downbeam element and an intermediate portion between the upbeam and downbeam portions. The upbeam portion and the downbeam portion protrude relative to the intermediate portion so the spacer aperture has an increased dimension at the intermediate portion compared to the upbeam and downbeam portions.
An electrolyzer that includes an anode configured for being connected to a first pole of a voltage source; a cathode configured for being connected to a second pole of the voltage source; a fluid inlet configured to allow a flow of fluid to enter the electrolyzer; and a fluid outlet configured to allow the flow to exit the electrolyzer, wherein the electrolyzer is configured to cause the flow to have a flow speed profile along a flow axis with a relatively higher flow speed at the flow axis between the anode and the cathode, wherein the flow speed becomes relatively lower at locations away from the flow axis and more proximate the anode and the cathode, and wherein the electrolyzer has an entrance length that causes the flow speed profile to be at least a partially developed laminar flow when the flow reaches the anode or the cathode.
A fluid dispensing system including a fluid-permeable surface having a pre-defined permeability to allow permeation of a fluid, and a controller configured to control the rate of permeation of the fluid into a volume by controlling one or both of a pressure of the fluid and an exposed surface area of the fluid-permeable surface. Also provided is a method of controlling the dispensing of a fluid, a plasma-generating apparatus including such a fluid dispensing system as well as the use of such a system, method, or apparatus in a lithographic apparatus or process.
Disclosed is a metrology method. The method comprises obtaining measurement data relating to measurement of at least one target using two or more different illumination profiles; and a respective parameter of interest value for a parameter of interest for each of said two or more different illumination profiles. The method described determining, from said measurement data, a respective measurement parameter deviation value for each of said two or more different illumination profiles, said measurement parameter deviation value describing a deviation in a measurement parameter with respect to a measurement parameter value attributed to a region of interest of said target or a sub-target thereof; determining a relationship for the target between the parameter of interest values and the measurement parameter deviation values; and determining one or both of a corrected parameter of interest value and a preferred illumination profile from said relationship.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A detector for use in a charged particle device for an assessment tool to detect signal particles from a sample, the detector including a substrate, the substrate including: a semiconductor element configured to detect signal particles above a first energy threshold; and a charge-based element configured to detect signal particles below a second energy threshold.
Passive integrated optical systems and methods are described. The present systems and methods facilitate reduction of spatial optical coherence in source radiation used for metrology, for example. Current coherence scramblers used for metrology typically include one or more (moving) mechanical components configured to reduce the coherence of source radiation. However, these mechanical coherence scramblers occupy volume within a system and introduce the threat of mechanical wear and/or failure. In contrast, the present systems and methods utilize a combination of passive integrated optical elements to form a coherence scrambler. This reduces or eliminates the use of mechanical components and increases durability, among other advantages.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
10.
MECHATRONIC SYSTEM CONTROL METHOD, LITHOGRAPHIC APPARATUS CONTROL METHOD AND LITHOGRAPHIC APPARATUS
An embodiment provides a control method for controlling a mechatronic system. The method comprises providing a model of the mechatronic system, the model comprising a disturbance compensation parameter and modifying the disturbance compensation parameter by: obtaining a servo-error of the mechatronic system, obtaining a setpoint of the mechatronic system and determining, based on the setpoint and the model of the mechatronic system comprising the disturbance compensation parameter, a predicted servo-error of the mechatronic system, such that the disturbance compensation parameter is based on a correlation between the servo-error and the predicted servo-error. The method further comprises updating a feedforward transfer function of the mechatronic system based on the modified disturbance compensation parameter and continuously determining a control signal to control the mechatronic system using the updated feedforward transfer function.
G05B 13/04 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G05B 19/19 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path
A nozzle is provided for a droplet generator for a laser-produced plasma radiation source. The nozzle comprises a glass capillary for emitting droplets and a nozzle fitting comprising a throughbore, wherein the glass capillary is at least partially disposed in the throughbore. The nozzle further comprises a glass ferrule coupling the glass capillary to the nozzle fitting, the glass ferrule being conformed to a shape of the throughbore of the nozzle fitting. A method of manufacturing a nozzle for a droplet generator is also provided.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
C03B 29/00 - Reheating glass products for softening or fusing their surfacesFire-polishingFusing of margins
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
12.
METHOD AND APPARATUS FOR CONTACTLESS INSPECTION OF A SUBSTRATE
A device for inspecting a conductive pattern on a substrate includes a plurality of sensor plates, a table configured and arranged to support the substrate, a voltage source configured to generate an electric field between the sensor plates and the conductive pattern on the substrate, an actuator configured to move the sensor plates relative to the substrate, and a controller configured and arranged to identify regions having defect on the basis of changes in capacitance between the sensor plates and the substrate as the sensor plates are moved relative to the substrate.
Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G06F 18/28 - Determining representative reference patterns, e.g. by averaging or distortingGenerating dictionaries
G06F 30/20 - Design optimisation, verification or simulation
G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
Disclosed herein are embodiments that relate to a metrology apparatus and associated methods for imaging a plurality of targets (e.g., alignment marks) disposed on of a substrate (550, 650) in parallel using a fixed sensor (510, 530, 610) component that provides electrical, optical, and mechanical connections in combination with a swappable optical routing component (520, 620, 720). The swappable optical routing component (520, 620, 720) allows for target alignment marks to be placed in a field in any desirable configuration.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
15.
SYSTEM AND METHOD FOR COUNTING PARTICLES ON A DETECTOR DURING INSPECTION
Systems, apparatuses, and methods include a detector including a plurality of detection elements configured to generate an electrical signal in response to a particle being incident on a detection element of the plurality of detection elements; a plurality of current sources configured to drive a current in response to the electrical signal, outputs of the plurality of current sources being connected to enable combining current output by the plurality of current sources to create a combined current, the plurality of current sources being connected to respective ones of the plurality of detection elements; and an analog-to-digital converter (ADC) configured to convert the combined current to a digital value that is indicative of the electrical signals output by the plurality of detection elements.
Disclosed is a pellicle membrane comprising three or more layers, the three or more layers comprising at least one inner layer and at least one outer layer on either side of said at least one inner layer, wherein the at least one inner layer comprises and/or consists of one or more of boron, zirconium, beryllium, niobium, yttrium, molybdenum and/or carbon and/or one or more compounds of each of these materials. Also disclosed is a metrology apparatus which uses such a pellicle membrane as a beamsplitter and/or filter.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An inspection system includes a radiation source, first and second optical structures, and a detection system. The radiation source generates beams of radiation. An image formed by the beams includes radiation spots corresponding to the beams. Diameters of the radiation spots is less than a dimension of a target and the radiation spots are non-overlapping. The first optical structure routes the beams toward the target so as to project the radiation spots on the target and generate scattered radiation from the target. The second optical structure collects the scattered radiation from the target. The detection system receives the scattered radiation collected by the second optical structure and generates measurement signals. Each of the measurement signals corresponds to each of the radiation spots.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
18.
SUBSTRATE HOLDER, LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, AND METHOD OF MANUFACTURING A SUBSTRATE HOLDER
A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
B05D 5/00 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools
B22F 10/00 - Additive manufacturing of workpieces or articles from metallic powder
A system and method for enhanced edge detection in charged particle beam systems such as scanning electron microscopes. The method uses spatial information of the incidence locations of charged particle arrival events on a detector surface to determine when an edge feature is being detected on a sample. An asymmetry parameter, such as shift in the center of mass of a distribution of charged particle arrival events, may be used to determine the presence of an edge feature on a sample surface.
Systems and methods of measuring of optimizing collection efficiency of secondary charged particles include a multi-beam inspection apparatus configured to scan a sample and including a lens, a detector configured to receive a plurality of secondary charged-particle beams in response to scanning the sample, and a controller including circuitry communicatively coupled to the multi-beam inspection apparatus and the detector, configured to: focus the lens to adjust sizes of secondary beam spots, wherein the secondary beam spots are formed by the plurality of secondary charged-particle beams on the detector; cause, for each secondary charged-particle beam of the plurality of secondary charged-particle beams, outlier charged particles of the each secondary charged-particle beam to not be detected by the detector; and refocus the lens to adjust currents of a portion of the plurality of secondary charged-particle beams detected by the detector, wherein the outlier charged particles do not contribute to the currents.
Systems, apparatuses, and methods for adjusting distortion in images. Embodiments include obtaining a plurality of images; determining alignment differences between a plurality of features on the plurality of images and corresponding features in layout data corresponding to the plurality of images; modeling the alignment differences; and adjusting at least one of: a machine setting corresponding to obtaining the plurality of images; or at least one feature of the plurality of features on at least one image of the plurality of images using the modeling.
Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The apparatus may include a charged-particle source configured to emit charged particles, the emitted charged particles forming a primary charged-particle beam along a primary optical axis; an objective lens comprising a magnetic lens; a charged-particle detector located downstream from the objective lens with respect to a path of the primary charged-particle beam and along a horizontal plane substantially perpendicular to the primary optical axis; and a voltage control plate located between the charged-particle detector and a pole-piece of the magnetic lens. The voltage control plate may comprise a horizontal portion comprising an opening; and an elongated portion extending downward from the opening with respect to the path of the primary charged-particle beam, into a hole of the charged-particle detector.
An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved load lock unit is disclosed. An improved load lock system may comprise a plurality of supporting structures configured to support a wafer and a conditioning plate including a heat transfer element configured to adjust a temperature of the wafer. The load lock system may further comprise a gas vent configured to provide a gas between the conditioning plate and the wafer and a controller configured to assist with the control of the heat transfer element.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A substrate support for supporting a substrate in a lithographic apparatus, the substrate support including: a support body configured to support the substrate; a main body separate from the support body and configured to support the support body, the main body including a thermal conditioner configured to thermally condition the main body and/or support body and/or substrate; and an extractor body surrounding the main body and the support body, the extractor body having an extraction channel configured to extract fluid from near a peripheral part of the substrate.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
25.
SUBSTRATE HOLDING SYSTEM AND LITHOGRAPHIC APPARATUS
A substrate holding system includes a substrate support configured to support a substrate, a gas source, and a plurality of conduits. The substrate support includes a first port and a plurality of second ports radially outwards of the first port. The first port and the plurality of second ports are configured to be in fluid communication with the gas source. The gas source is configured to supply an inert gas to a region between the substrate and the substrate support via the first port and the plurality of second ports. The substrate holding system is configured such that the inert gas can be supplied to the region between the substrate and the substrate support through the first port or the plurality of second ports. The substrate holding system is configured to extract gas from the region between the substrate and the substrate support through the plurality of second ports.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A reflective member for use in an EUV lithographic apparatus, the reflective member including a multilayer stack which comprises a plurality of layers arranged in pairs, wherein: each pair comprises a first layer and a second layer; the first layer is formed of a material that comprises Si; and the second layer is formed of a material that comprises at least two selected from: Ru, Nb, and/or Mo, and wherein the second layer is configured to have, for radiation with a wavelength of approximately 13.5 nm, a refractive index that is less than or equal to 0.92 and an absorption coefficient that is less than or equal to 0.015.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
27.
METHOD AND APPARATUS FOR DETERMINING A PHYSICAL QUANTITY
A method of determining a physical quantity is disclosed. The method uses a sensor system configured to sample a plurality of positions in parallel, wherein sampling each position uses radiation incident on an object plane patterning device (mark) and an image plane sensor. Each mark comprises a first portion and a second portion, the first portion being different to the second portion, and wherein the first and second portions of at least one of the marks is transposed relative to the first and second portions of the other marks. Each mark corresponds to a different sampling position. The method comprises, for each portion of each mark: performing a first measurement in a first direction; and performing a second measurement in a second direction different to the first direction. Four data sets are determined and subsequently combined to determine the physical parameter.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method to determine an absolute position of a first movable object using an interferometer system is described, said method comprising: providing first and second beams with a first light frequency from a first light source: providing further first and further second beams with a second (tunable) light frequency from a second light source: guiding the first and further first beams along a first axis to a reflective surface of the first object to obtain a first interferometer signal and guiding the second and further second beams along a second axis to a reflective surface of a second object to obtain a second interferometer signal, while changing the tunable frequency, detecting the first and further first interferometer signals detecting the second and further second interferometer signals, determining a first count offset and/or a further first count offset using a non-linear equation, and determining the absolute position of the first object.
G01B 9/02001 - Interferometers characterised by controlling or generating intrinsic radiation properties
G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
29.
ELECTRON-OPTICAL APPARATUS AND METHOD OF OBTAINING TOPOGRAPHICAL INFORMATION ABOUT A SAMPLE SURFACE
Apparatus and methods for obtaining topographical information about a sample surface. In one arrangement, a sensing system includes a group of proximal sensors for measuring positions of respective portions of a sample surface, and a distal sensor positioned more remotely from paths of sub-beams of a multibeam than the proximal sensors. The distal sensor measures a position of a portion of the sample surface relative to the distal sensor. A control system controls a charged particle device to process the sample surface in a multibeam processable area using the multibeam. A stage causes the multibeam processable area to move along a processing path in a reference frame of the sample. The sensing system uses at least the distal sensor to obtain topographical information about the sample surface in a selected portion of the processing path before the multibeam processable area reaches the selected portion of the processing path.
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
30.
SYSTEM, APPARATUS AND METHOD FOR SELECTIVE SURFACE TREATMENT
Disclosed herein is a shielding system for use in a surface treatment process, comprising a first disk and a second disk. The first disk and second disk being arranged substantially parallel to each other. The first disk comprises a slit-shaped opening, the second disk comprises a plurality of openings: and the first and second disk are arranged to move with respect to each other around a common axis. Herewith, the slit can be positioned at one or more openings of the plurality of openings to form a passage through the shielding system.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present disclosure relates to modular assembly for engaging modules of an apparatus together. The assembly comprising two modules configured to be mutually engageable to adjoin each other. The modules each having a body and multiple engagers that are each configured to engage with a corresponding engager of another of the modules and to complete a corresponding verification circuit. Each verification circuit is configured to be closed on engagement of an engager of one of the modules with a corresponding engager of the other of the modules. The engager is configured to be electrically isolated from the body of the one of the two modules, and the corresponding engager is configured to be electrically connected to the body of the other of the two modules.
A freeze valve includes: a valve sleeve defining an axial bore that is in fluid communication with a first fluid port; and a valve body defining an axial opening between an axially-closed end that is received within the axial bore and an axially-open end that is in fluid communication with a second fluid port. The valve body includes one or more through holes formed in a longitudinal section of the valve body at the axially-closed end, each through hole fluidly coupling the axial opening and the axial bore of the valve sleeve.
A micro-electromechanical system, MEMS, device configured to actuate a first part relative to a second part, the MEMS device comprising: a first electrode and a second electrode configured such that, in use, application of a voltage to the first electrode and the second electrode would cause a force to be applied to the first part relative to the second part; and a first baffle configured to prevent ingress of a fluid or transmission of radiation from an environment outside of the MEMS device into a space occupied by the first electrode and the second electrode.
G01B 11/26 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A beam metrology device for determining at least one characteristic of first radiation and/or at least one characteristic of second radiation, said second radiation being generated via a first nonlinear process upon receiving a first portion of the first radiation; the beam metrology device comprising: a metrology device nonlinear medium configured to receive a second portion of the first radiation and thereby to generate third radiation via a second nonlinear process; at least one detector configured to measure at least one characteristic of the third radiation; and a processing unit operable to determine the at least one characteristic of the first radiation and/or the at least one characteristic of the second radiation based on said at least one characteristic of the third radiation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
35.
FOCUS MEASURMENT AND CONTROL IN METROLOGY AND ASSOCIATED WEDGE ARRANGEMENT
Disclosed is a wedge arrangement comprising a plurality of wedge elements, arranged around an optical axis, the plurality of wedge elements comprising at least a first wedge element, a second wedge element and a third wedge element; wherein: said first wedge element comprises a first optical surface and second optical surface, wherein the first optical surface is planar and non-perpendicular to the optical axis and the second optical surface is non-planar such that said first wedge element has a non-linear thickness change; said second wedge element comprises a third optical surface and fourth optical surface which are each planar and are non-parallel; and said third wedge element comprises a fifth optical surface and sixth optical surface wherein the fifth optical surface is planar and non-perpendicular to the optical axis. Also disclosed is a metrology device which uses such a wedge arrangement in determining focus of measurement radiation during a measurement.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
36.
RADIATION TOLERANT DETECTOR ARCHITECTURE FOR CHARGED PARTICLE DETECTION
A detector for a scanning electron microscope (SEM) system comprises a semiconductor substrate, and a switching network formed on the semiconductor substrate and comprising a radiation hardened NMOS transistor, the NMOS transistor comprising a first source/drain diffusion region, a second source/drain diffusion region, and a gate patterned on the semiconductor substrate and encircling one of the first and second source/drain diffusion regions.
Detectors and methods of detecting radiation are disclosed. In one arrangement, a plurality of pixel elements is provided. The pixel elements include respective pixel substrates, collection electrodes and readout circuits. The pixel substrates are configured such that impingement of target radiation on the pixel substrates generates charge carriers in the pixel substrates. The readout circuits are configured to provide an output responsive to collection of the charge carriers by the respective collection electrodes. A control system implements a plurality of selectable resolution modes by controlling potentials applied to control electrodes and the collection electrodes to define a corresponding plurality of mappings between the pixel substrates in which charge carriers are generated and the collection electrodes that collect those charge carriers.
Method of spatially aligning a patterning device and a substrate, wherein the patterning device and the substrate are separated by an optical path including one or more moveable optical components, the method including: projecting a radiation beam from the patterning device along the optical path; performing a displacement of the one or more moveable optical components along a predetermined trajectory; determining an optical characteristic of the radiation beam as received by a sensor on a substrate table supporting the substrate at a plurality of instants during the displacement of the one or more moveable optical components; and spatially aligning the patterning device and the substrate based on the optical characteristic as determined at the plurality of instants.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of producing a photonic crystal fiber (PCF) preform, the method including measuring a wall thickness of each of a plurality of preform capillaries along at least a portion of its periphery at one or more axial positions; selecting a number of preform capillaries from the plurality of preform capillaries at least based on a thickness criterion; and placing the selected preform capillaries in a tube to form a PCF preform having at least one ring arrangement including the selected preform capillaries, wherein the selected preform capillaries are oriented such that the portion of each of the selected preform capillaries, within which the measured wall thickness varies from a nominal wall thickness by no more than a maximum thickness variation, faces a longitudinal axis of the tube, the tube being substantially symmetrical about the longitudinal axis.
Disclosed is an apparatus and a method in which multiple, e.g., two or more pulses from a single laser source are applied to source material prior to application of a main ionizing pulse in which the multiple pulses are generated by a common laser source. The first pulse is directed towards the source material when the source material is at a first position and the second pulse is directed towards the source material when the source material is at a second position.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An end-effector is disclosed for handling a substrate, comprising: a base; a clamping body comprising an actuator configured to switch between a first position, wherein the substrate is fixed in position with respect to the clamping body, and a second position, wherein the substrate is released; a guidance mechanism connecting the clamping body to the base while allowing freedom of movement of the clamping body relative to the base within a predetermined range of motion; and a fixation mechanism for switching a connection between the clamping body and the base between a fixed position, wherein the clamping body is fixated relative to the base, and a free position, wherein the clamping body can move relative to the base.
B25J 19/00 - Accessories fitted to manipulators, e.g. for monitoring, for viewingSafety devices combined with or specially adapted for use in connection with manipulators
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
42.
METHOD FOR DETERMINING A FAILURE EVENT ON A LITHOGRAPHY SYSTEM AND ASSOCIATED FAILURE DETECTION MODULE
A method for determining a failure event on a lithography system. The method includes decomposing at least one signal generated within the lithography system into a plurality of component signals, each component signal relating to a different respective frequency range; evaluating at least one of the component signals with respect to nominal lithographic system behavior; and identifying any deviation of at least one of the component signals from the nominal lithographic system behavior as a failure event.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
43.
METHOD AND APPARATUSES FOR FOURIER TRANSFORM SPECTROMETRY
Disclosed is a Fourier-transform spectrometer comprising a beamsplitting arrangement operable to define a first radiation source and a second radiation source from a common radiation source, and at least one detector operable to detect interferogram data as a function of detection position in at least a first detection plane direction of a detection plane, the interferogram data resulting from interference of a first diverging beam emitted from said first radiation source and a second diverging beam emitted from said second radiation source. A processor is operable to: perform a linearization correction to said interferogram data to obtain linearized interferogram data; and Fourier transform the linearized interferogram data to obtain spectral characteristic data relating to the common radiation source.
Disclosed is a method comprising: obtaining measured data relating to at least one measurement by a measurement apparatus configured to irradiate radiation onto each of one or more structures on a substrate: decomposing the measured data using a decomposition method to obtain multiple measured data components: obtaining simulated data relating to at least one simulation based on the one or more structures: decomposing the simulated data using the decomposition method to obtain multiple simulated data components: matching between at least a portion of the simulated data components and at least a portion of the measured data components; and extracting a feature of the substrate based on the matching of at least a portion of the simulated data components and at least a portion of the measured data components.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method for testing an array of devices, each having an electrical connection between two electrodes controllable by a signal applied to a control element, comprises: applying a reference electric potential to a first electrode of the two electrodes of each device; directing a charged particle beam onto a second electrode of the two electrodes of each device; varying a signal applied to the control element of each device; and monitoring, for each signal applied, signal charged particles from the second electrode of each device.
A method for source mask optimization or mask only optimization used to image a pattern onto a substrate is described. The method comprises determining a non-uniform illumination intensity profile for illumination from an illumination source; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto the substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination source and the projection optics of a lithographic apparatus. In some embodiments, the projection optics comprise a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may comprise performing optical proximity correction, for example.
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
A metrology and control system (100, 400, 500) for a laser beam in an EUV radiation source is disclosed. The system comprises an optical pickup (405, 540, 550) configured to measure a forward beam (410, 510, 520, 530) directed towards a target location (420, 535) and a return beam (415) reflected from the target location. The system also comprises actuatable optical devices (425, 430, 435, 465, 475, 555, 560, 565) configurable to direct and focus the forward beam onto the target location and align a measurement plane of the optical pickup with the target location. The actuatable optical devices are disposed before and after the optical pickup in a path of the forward beam, and the actuatable optical devices are controlled in response to a measurement of the forward beam and the return beam by the optical pickup.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of determining contamination of an optical sensor of a sensing system in a lithographic apparatus, the method comprising directing EUV radiation through an opening in a reticle masking blade (26) and onto a patterning device, projecting reflected EUV radiation onto the sensing system and thereby causing build-up of an area of contamination, measuring a height of the area of contamination and a height of an area of the sensing system which did not receive the reflected EUV radiation, and using the measured heights to determine an amount of contamination on the optical sensor of the sensing system.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of operating a laser includes, after a laser produces a first pulse, setting an attenuation of an attenuator in the laser such that gain of the laser exceeds losses of the laser to allow the laser to produce a first continuous beam; after the first continuous beam is produced, increasing the attenuation such that losses of the laser exceed a gain of the laser; and after increasing the attenuation, lowering the attenuation such that the laser produces a second pulse. A system for generating a pulse of laser radiation includes an optical modulator controlled by a signal applied to the optical modulator, the modulator connected to a laser, and a control system configured to provide the signal to the modulator according to the method.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 3/106 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
H01S 3/107 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
H01S 3/223 - Gases the active gas being polyatomic, i.e. containing two or more atoms
50.
SUBSTRATE HOLDER AND METHOD OF MANUFACTURING A SUBSTRATE HOLDER
An object holder for a lithographic apparatus has a main body having a surface. A plurality of burls to support an object are formed on the surface or in apertures of a thin-film stack. At least one of the burls is formed by laser-sintering. At least one of the burls formed by laser-sintering may be a repair of a damaged burl previously formed by laser-sintering or another method.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
B05D 5/00 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools
B22F 10/00 - Additive manufacturing of workpieces or articles from metallic powder
Systems and methods of measuring overlay for a sample under a scan performed by a charged-particle beam inspection apparatus include obtaining a first detector signal in response to a first scan of a first target of the sample and a second detector signal in response to a second scan of a second target of the sample; determining a first transformed signal and a second transformed signal by performing a Fourier transform on the first detector signal and the second detector signal; and determining, based on the first transformed signal and the second transformed signal, an overlay value of the sample.
A system for removing particles from a surface includes a plurality of ultrasonic transducers, arranged in an array, a control system, in communication with the plurality of ultrasonic transducers, the control system configured to control phase and amplitude of transducers in the array to generate an acoustic particle trap at a selected location on the surface, and to move a particle trapped in the particle trap away from the surface, and an actuator, configured and arranged to relatively move the array of ultrasonic transducers in a scanning pattern over the surface such that different portions of the surface pass through the generated acoustic particle trap.
B08B 7/02 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
A method is proposed of using low-resolution images of at least one product produced by one or more imaging processes, and imaging models characterizing the imaging processes, to determine values for plurality of numerical parameters which collectively define a product model of the at least one product. The determination of the values is performed by forming a loss function based on the acquired images, the imaging models, and the numerical parameters of the model, and performing a minimization algorithm to minimize the loss function with respect to the numerical parameters. Due to prior knowledge of the product encoded in the loss function, the product model may comprise reconstructed images which have a higher resolution than the low-resolution images.
Disclosed is a method of determining an illumination-detection system alignment of an illumination-detection system describing alignment of at least one detector and/or measurement illumination of a metrology apparatus in terms of two or more illumination-detection system alignment parameters, each illumination-detection system alignment parameter relating to a respective degree of freedom for aligning the detector and/or the measurement illumination. The method comprises obtaining a diffraction pattern relating to diffraction of broadband radiation from a structure; transforming each of one or more diffraction orders of the diffraction pattern to a respective region coordinate system, each region coordinate system comprising a first axis and a second axis, each region coordinate system being such that said first axis is aligned in relation to a direction of an intensity metric of each transformed diffraction order; and determining illumination-detection system alignment parameter values for the illumination-detection system alignment parameters.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
55.
ELECTRON-OPTICAL STACK, MODULE, ASSESSMENT APPARATUS, METHOD OF MANUFACTURING AN ELECTRON-OPTICAL STACK
The present disclosure relates to an electron-optical stack for manipulating one or more charged particle beams and associated apparatus and methods. In one arrangement, a plurality of electron-optical plates have major surfaces on opposite sides of the plates. The plates define a set of channels configured to be aligned along a beam path of a charged particle beam to allow the charged particle beam to pass through the plates via the channels. Each channel defines apertures in the two major surfaces of the plate that defines the channel. The apertures have different shapes from each other. The plates are oriented such that the apertures comprise one or more matching aperture pairs along the beam path. The or each matching aperture pair consists of apertures having the same shape defined in adjacent major surfaces of adjacent plates.
A lithographic apparatus includes an illumination system, a projection system, and a stage. The illumination system illuminates a pattern of a patterning device. The projection system projects an image of the pattern onto a substrate. The stage moves the patterning device or the substrate. The stage includes a support structure, an actuator device, first, second, and third actuator targets, and a tensional member. The third actuator target is attached to a first side of the support structure. The actuator device is disposed proximal to the first and third targets and magnetically interacts with the first and third targets to move the support structure along a direction. The first and second actuator targets disposed at opposite sides of the support structure and are attached at opposite ends of the tensional member. The tensional member transmits a mechanical load to the second side of the support structure via the second actuator target.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
57.
CABLE SLAB, POSITIONING MODULE AND LITHOGRAPHIC APPARATUS
There is provided a cable slab for connecting a first movable object with a second object, the cable slab comprises a first permanent magnet having a first magnetic field orientation, the cable slab is arranged to be at least partially supported by a support comprising a second magnet having a second magnetic field orientation such that the first permanent magnet and the second magnet are repulsing when the first permanent magnet and the second magnet are facing each other to exert a force on cable slab, and the cable slab comprises one or more clamp brackets, each clamping one or more supply hoses and/or supply cables, the first permanent magnet is arranged in or on one of the one or more clamp brackets.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H02G 11/00 - Arrangements of electric cables or lines between relatively-movable parts
58.
METHOD OF DETERMINING A PARASITIC FORCE OF AN ACTUATOR OF AN OPTICAL COMPONENT, CONTROL METHOD FOR AN ACTUATOR, OPTICAL SYSTEM, PROJECTION SYSTEM AND LITHOGRAPHIC APPARATUS.
A method of determining a parasitic force of an actuator (320) of an optical component (300) is described, whereby the actuator is mounted to a first frame (310) and is configured to control a position of the optical component relative to a second frame (340). The method comprises: —obtaining a first position signal representing a position of the optical component relative to the first frame; —performing a low-pass filtering to the first position signal; —obtaining a second position signal representing a position of the optical component relative to the second frame; —performing a high-pass filtering to the second position signal, the high-pass filtering being complementary to the low-pass filtering; —determining the parasitic force of the actuator, based on the combined low-pass filtered first position signal and the high-pass filtered second position signal.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
An optical arrangement eliminates the use of a quad non polarized beam splitter (QNPBS) and the need for image stitching. The optical arrangement provides an enhanced transmission gain as with a QNPBS to optimize system throughput. A metrology system (600) includes an illumination mode selector (IMS) (650) comprising a multi-aperture pattern having transmissive portions and reflective portions. The IMS (650) is positioned in a pupil plane (655) of the system (600), and configured to: transmit portions (671) of radiation (604) toward a diffraction grating target (610); and reflect diffracted radiation from the target (610) along a second optical path (631) toward a detector (662). Area decoupling of transmissive and reflective portions on the IMS (650) optimizes the illumination and detection light intensity simultaneously. Plus and minus first diffraction order diffracted radiation from the target (610) may be reflected by two reflective quadrants of the multi-aperture pattern, the two reflective quadrants located on a back or non-radiation source facing side (651) of the IMS (650).
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
G02B 27/14 - Beam splitting or combining systems operating by reflection only
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
60.
DETERMINING MASK RULE CHECK VIOLATIONS AND MASK DESIGN BASED ON LOCAL FEATURE DIMENSION
Methods and systems for determining mask rule check (MRC) violations associated with mask features based on a local feature dimension (LFD) of mask features. A detector is placed at a first location of a mask feature and its size is varied until it is in contact with a second location of the mask feature. The size of the detector when it is in contact with the second location is determined as an LFD of a portion of the mask feature. For example, the LFD may be determined as a function of a radius of a circular detector. An MRC violation may be detected by comparing the LFD with an LFD specification in the MRC. For example, an MRC violation may be detected when the LFD of the portion is lesser than a minimum LFD or greater than a maximum LFD specified in the MRC.
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
G01B 21/20 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
61.
SYSTEM AND METHOD FOR IMPROVING IMAGE QUALITY DURING INSPECTION
Systems, apparatuses, and methods for improving image quality. In some embodiments, a method may include obtaining a plurality of images of an area of a sample; determining via a phase diversity analysis: ma plurality of focus-related values, wherein each focus-related value of the plurality of focus-related values is associated with each image of the plurality of images; a maximum likelihood estimate of the plurality of images; and generating a focus-corrected image of the area based on the determined plurality of focus-related values and the determined maximum likelihood estimate.
A method of determining a mask design, the method includes generating a continuous multimodal representation of a probability distribution of a target design in at least a portion of a latent space. The latent space includes a distribution of feature variants that can be used to generate mask designs based on the target design. The method includes selecting a variant from the continuous multimodal representation in the latent space. The variant includes a latent space representation of one or more features to be used to determine the mask design. The method includes determining the mask design based on the target design and the variant.
The present disclosure relates to charged particle devices for projecting charged particles towards a sample and methods of assessing a sample using charged particles. A charged particle optical element directs beams of charged particles towards a sample. The charged particle optical element comprising a plate in which is defined beam apertures and a plurality of vent apertures. A beam tube defines an inner tube volume comprising paths up-beam of the plate of charged particles of the beams, and an outer tube region that is outside of the beam tube. The beam apertures are for passage towards the sample of charged particles of the beams, from the inner tube volume to a down-beam volume on an opposite side of the plate to the inner tube volume. Vent apertures fluidically connect the down-beam volume to the outer tube region.
A method for determination of a parameter of interest in a manufacturing process. For a measurement structure including a first grating with a first pitch and a second grating with a second pitch, a sensitivity of a Moiré interference pattern component is determined. The sensitivity is determined with respect to the parameter of interest in the manufacturing process. The measurement structure is evaluated, based on the sensitivity, for use in measuring the parameter of interest in the manufacturing process. A method of measuring the parameter of interest based on the measurement structure is described. A method of generating parameters of the measurement structure based on evaluation of the measurement structure for measurement of the parameter of interest is also described.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
65.
METHOD AND SYSTEM OF OVERLAY MEASUREMENT USING CHARGED-PARTICLE INSPECTION APPARATUS
A system, including: a charged-particle beam inspection apparatus configured to scan a sample that includes a target with a plurality of pattern layers; and a controller including circuitry, configured to: obtain detection data in response to a scan of the target; and determine one or more characteristics of the sample in dependence on the obtained detection data and a model, wherein, for each of the plurality of pattern layers of the target, the model has a term that is dependent on the properties of the pattern layer.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
66.
SYSTEMS AND METHODS FOR OPTIMIZING METROLOGY MARKS
Systems, methods, and computer software are disclosed for optimizing a metrology mark. One method includes simulating an etch process based on one or more selected from: a pattern density, a microloading effect induced intra-mark variation, or a sensitivity of intra-mark variation to etch chemistry. The method can predict etch-induced process effects on the metrology mark based on the simulation of the etch process and optimize the metrology mark based on the predicted etch-induced process effects.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
67.
SUBSTRATE HOLDER FOR USE IN A LITHOGRAPHIC APPARATUS
A substrate holder, for a lithographic apparatus, having a main body, a plurality of support elements to support a substrate and a seal unit. The seal unit may include a first seal positioned outward of and surrounding the plurality of support elements. A position of a substrate contact region of an upper surface of the first seal may be arranged at a distance from the plurality of support elements sufficient enough such that during the loading/unloading of the substrate, a force applied to the first seal by the substrate is greater than a force applied to the plurality of support elements by the substrate. A profile of the contact region, in a cross section through the seal, may have a shape which is configured such that during the loading/unloading of the substrate, the substrate contacts the seal via at least two different points of the profile.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
68.
STOCHASTIC-AWARE SOURCE MASK OPTIMIZATION BASED ON EDGE PLACEMENT PROBABILITY DISTRIBUTION
A method for stochastic-aware source mask optimization is described. A probability distribution for edge placement which accounts for stochasticity is determined. Based on the probability distribution, the source configuration, mask configuration, or the combination thereof can be optimized for a lithography process. The probability distribution for edge placement can account for a distribution of stochastic effect on edge placement, including a stochastic edge placement error contribution. The probability distribution of edge placement can be compared to a profile to determine a simulated distribution of edge placement error. A cost function, which accounts for the probability distribution of edge placement, can be used to optimize the source configuration, the mask configuration, of the combination thereof.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
69.
APPARATUS FOR AND METHOD OF CONTROLLING DROPLET GENERATOR PERFORMANCE
Apparatus for and method of controlling formation of droplets used to generate EUV radiation. The droplet source includes a fluid exiting an nozzle and a sub-system having an electro-actuatable element producing a disturbance in the fluid. The droplet source produces a stream that breaks down into droplets that in turn coalesce into larger droplets as they progress towards the irradiation region. The electro-actuatable element is driven by a control signal having a sine wave component and a square wave component. Various parameters such as a phase difference between the sine wave component and the square wave component are measured and controlled to minimize the formation of noncoalesced satellite droplets in the stream.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of determining contamination of an optical sensor in a lithographic apparatus, the method including projecting patterned reflected EUV radiation towards the optical sensor and thereby forming an aerial image of a pattern, moving the optical sensor relative to the patterned reflected EUV radiation such that an intensity of EUV radiation measured by the optical sensor varies as a function of the position of the optical sensor, wherein the intensity measured by the optical sensor passes through a minimum, and using the measured intensity to measure contamination of the optical sensor.
G01N 21/94 - Investigating contamination, e.g. dust
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
71.
Lithographic apparatus, device manufacturing method, and method of correcting a mask
A lithographic apparatus includes a mask correction system configured to controllably and locally alter a property of a mask, for example transmissivity, transmissivity to a particular polarization state, birefringence and/or geometry. The mask correction system, in an embodiment, directs a beam of radiation onto a spot of the mask, the mask being scanned relative to the mask correction system. The mask correction system may include an arrangement to irradiate multiple spots on the mask substantially simultaneously.
G03B 27/52 - Projection printing apparatus, e.g. enlarger, copying camera Details
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A fuel droplet nozzle assembly comprises a first hollow body and a piezoelectric element. The first hollow body comprises an inlet and an outlet and a bore extending between the inlet and the outlet. In use, fuel (for example liquid tin) may be provided into the first hollow body via the inlet under pressure. The piezoelectric element surrounds and is in direct or indirect contact with the first hollow body. In use, the piezoelectric element may be configured to squeeze the first hollow body at an excitation frequency and can be used to generate sound waves in the first hollow body. The fuel droplet nozzle assembly may further comprise a second hollow body surrounding and in direct or indirect contact with the piezoelectric element. Additionally or alternatively, the first hollow body may be a composite body formed from at least: an outer support portion formed from metal; and an inner portion formed from a glass material.
The disclosure provides a device and method for measuring contamination. The device comprises: a layer of a non-conducting material; a layer of a semi-metal arranged on the layer of the non-conducting material; at least one set of electrodes, each electrode being in electrical contact to the layer of the semi-metal; and an electrical source of a voltage or current connected to the at least two electrodes. The semi-metal may be graphene. The non-conducting material may be hexagonal boron nitride. The method includes measuring a change in resistivity of the layer of the semi-metal using a voltage and/or a current source connected to the at least two electrodes.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 7/31 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes for testing the alignment of axes
G01N 27/04 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
74.
HOLLOW-CORE PHOTONIC CRYSTAL FIBER BASED OPTICAL COMPONENT FOR BROADBAND RADIATION GENERATION
Optical components and methods of manufacture thereof. A first optical component has a hollow-core photonic crystal fiber includes internal capillaries for guiding radiation and an outer capillary sheathing the internal capillaries; and at least an output end section having a larger inner cross-sectional dimension over at least a portion of the output end section than an inner cross-sectional dimension of the outer capillary along a central portion of the hollow-core photonic crystal fiber prior to the output end section. A second optical component includes a hollow-core photonic crystal fiber and a sleeve arrangement.
C03B 37/15 - Re-forming fibres or filaments with heat application, e.g. for making optical fibres
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
75.
TRANSIENT DEFECT INSPECTION USING AN INSPECTION IMAGE
An improved method and system for transient defect inspection using an inspection image are disclosed. The method comprises acquiring a plurality of inspection images, generating an average image of the plurality of inspection images, detecting a first type defect in the average image, determining a mask area corresponding to the first type defect, and determining whether the plurality of inspection images have a second type defect in a non-masked area.
Systems, apparatuses, and methods are provided for manufacturing a thermally actuated cooling apparatus. An example method can include providing a cooling member. The cooling member can include a contact plate, fins extending from the contact plate in a first direction, and a protuberance extending from the contact plate in a second direction. Subsequently, the example method can include mounting the protuberance to a part of an extreme ultraviolet (EUV) radiation source. The contact plate can include a first coefficient of thermal expansion (CTE) that is greater than a second CTE of the part.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of configuring a detector of a charged particle assessment system, the detector having an array of sensing elements configured to generate electrical signals in response to incident secondary particles or backscattered particles from a sample, the method comprising:
A method of configuring a detector of a charged particle assessment system, the detector having an array of sensing elements configured to generate electrical signals in response to incident secondary particles or backscattered particles from a sample, the method comprising:
selecting a first subset of the set of sensing elements for activation based on data derived from a predicted distribution of secondary particles or backscattered particles; and selecting a second subset of the set of sensing elements for deactivation based on the predicted distribution;
A method of configuring a detector of a charged particle assessment system, the detector having an array of sensing elements configured to generate electrical signals in response to incident secondary particles or backscattered particles from a sample, the method comprising:
selecting a first subset of the set of sensing elements for activation based on data derived from a predicted distribution of secondary particles or backscattered particles; and selecting a second subset of the set of sensing elements for deactivation based on the predicted distribution;
wherein the first subset has a different predicted ratio of incident secondary particles to incident backscattered particles than the second subset.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G06F 16/26 - Visual data miningBrowsing structured data
A pellicle membrane including emissive crystals in a matrix containing at least one element which forms a chemical bond with silicon having a bond dissociation energy of at least 447 kJ mol−1. A method of manufacturing such a pellicle membrane, a pellicle assembly including such a pellicle membrane and a lithographic apparatus including such a pellicle assembly or pellicle membrane. Also the use of molybdenum silicon sulphide, oxide, selenide, or fluoride in a pellicle membrane. The use of such a pellicle membrane, pellicle assembly or lithographic apparatus in a lithographic apparatus or method.
Methods, apparatuses, and software are disclosed for optimization of a source and/or mask as used in lithographic manufacturing and patterning processes. One method includes determining a first pupil having a central obscuration (CO), determining a diffraction order (DO) based on a target design and a mask model, determining a first diffraction pattern (DP) based on the DO and the first pupil, the first DP including overlapping regions of diffracted light, determining a second DP based on the DO and the first pupil, and determining an initial pupil based on the first DP and the second DP, the initial pupil including at least some of the overlapping regions.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/68 - Preparation processes not covered by groups
81.
A LITHOGRAPHIC APPARATUS, AN INSPECTION SYSTEM, AND A DETECTOR HAVING A SQUARE-CORE FIBER
An apparatus includes an illumination system, a projection system, and an inspection system. The illumination system illuminates a pattern of a patterning device. The projection system projects an image of the pattern onto a substrate. The inspection system includes a radiation source, an optical element, and a detector. The radiation source generates radiation. The optical element directs the radiation toward a target on the substrate. The detector includes a photosensitive device and a squarecore optical fiber. The photosensitive device receives at least a portion of radiation scattered by the target and generates a measurement signal based on the received portion of the radiation. The squarecore optical fiber is coupled to the photosensitive device, guides the portion of the radiation to the photosensitive device, and homogenizes the guided portion of the radiation such that an intensity cross-section of the received portion of the radiation at the photosensitive device is approximately uniform.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A substrate including a target. The target including a plurality of sub-targets, the plurality of sub-targets including at least a first sub-target and second sub-target, each of the plurality of sub-targets including at least one subsegmented periodic structure having repetitions of a first region and a second region, wherein at least one of the first regions or second regions comprise subsegmented regions formed of periodic sub-features. The first sub-target includes subsegmentation characteristics for its subsegmented regions and the second sub-target comprises second subsegmentation characteristics for its subsegmented regions, the first subsegmentation characteristics and second subsegmentation characteristics being different in terms of at least one subsegmentation parameter.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
83.
SYSTEMS, METHODS, AND SOFTWARE FOR MULTILAYER METROLOGY
Methods, apparatuses, and software are disclosed for multilayer metrology. One method includes obtaining image data of an object with an SEM system, with the image data acquired at multiple landing energy levels. A composed image is generated by performing pixel-by-pixel image processing of the image data. A metrology characteristic is determined from the composed image and metrology is performed on a feature based on the metrology characteristic.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
An assembly for movably supporting a mirror comprises: a mirror; and one or more deformable members. A first end of the or each deformable member defines a support portion and a second end of the or each deformable member is attached (either directly or indirectly to the mirror (for example on a rear surface of the mirror). The or each deformable member comprises a first actuator and a second actuator, the first and second actuators being independently addressable. Actuation of the first actuator moves the mirror relative to the support portion in a first direction and actuation of the second actuator moves the mirror relative to the support portion in a second direction that is opposite to the first direction. In use, the support portion may be attached or fixed to a support and the first and second actuators can be used to move the mirror relative to said support.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
85.
ILLUMINATION MODE SELECTOR AND ASSOCIATED OPTICAL METROLOGY TOOL
An illumination mode selector for use in an illumination branch of an optical metrology tool, and an associated optical metrology tool. The illumination mode selector includes a plurality of illumination apertures; and at least one polarization-changing optical element. Each of the illumination apertures and each of the at least one polarization-changing optical element are individually switchable into an illumination path of the optical metrology tool.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
A method of spatially aligning a patterning device and a substrate, wherein the patterning device and the substrate are separated by an optical path comprising one or more moveable optical components is described, the method comprising: —performing a plurality of alignment measurements, wherein for each alignment measurement the moveable optical components are arranged in respective predetermined positions, —combining the alignment measurements, and—spatially aligning the patterning device and the substrate based on the combination of the alignment measurements.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A broadband radiation device, comprising: a pulse shaper configured to impose a temporal profile onto an input pump pulse so as to generate a temporally-modulated pump pulse, the temporally-modulated pump pulse having a different temporal profile than the input pump pulse; and a hollow-core photonic crystal fiber (HC-PCF) having a hollow core for confining in use a working medium under a pressure, the HC-PCF being operable to receive the temporally-modulated pump pulse; wherein the temporally-modulated pump pulse is configured to be spectrally broadened by a soliton self-compression process to form broadband output radiation while propagating through the hollow core of the HC-PCF; and said temporal profile is configured so as to configure a spectrum of the broadband output radiation to have target spectrum characteristics.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
88.
METHOD OF OPTIMIZING MAINTENANCE OF A LITHOGRAPHIC APPARATUS
A method of optimizing maintenance of a lithographic apparatus. The method including obtaining productivity data relating to a productivity of a lithographic apparatus and error metric data relating to the effect of a maintenance action on exposure performance. The productivity data and error metric data is used to determine such that a loss of productivity metric is reduced or minimized, one or both of: a number of layers to ramp down in production of integrated circuits prior to the maintenance action on the lithographic apparatus, the layers being lithographically exposed on each of a plurality of substrates using the lithographic apparatus; and/or a maintenance schedule metric relating to the frequency of performance of the maintenance action.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An electron-optical projection device for projecting a plurality of charged particle beams towards a sample, the device comprising a stack of plates comprising beam directing elements configured to project the plurality of charged particle beams towards a sample location on the sample, wherein at least one plate of the stack comprises a planar optical member configured to direct stimulation light towards the sample location so that the stimulation light is coincident with the plurality of charged particle beams, desirably coincident with the paths of the plurality of charged particle beams towards the sample location, desirably in the at least one plate comprising an optical member is defined a plurality of apertures for respective paths of a plurality charged particle beams.
Some embodiments are related to a method of or apparatus for forming an image of a buried structure that includes: emitting primary charged particles from a source; receiving a plurality of secondary charged particles from a sample; and forming an image based on received secondary charged particles that have an energy within a first range.
Disclosed is a method of updating of a first model by training a second model, the first model relating to a first process range and trained using a first set of measurement signals relating to a first set of structures. The method comprises: obtaining a second set of measurement signals, the second set of measurement signals relating to a second set of structures comprising said first set of structures or a subset thereof; and training the second model using said second set of measurement signals and corresponding reference values for the parameter of interest as training data. The training comprises optimizing a cost function in terms of the second model while constraining the second model to infer values for the parameter of interest from the first set of measurement signals.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
92.
CHARGED-PARTICLE BEAM APPARATUS WITH LARGE FIELD-OF-VIEW AND METHODS THEREOF
Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The apparatus may include a charged-particle source configured to emit charged particles, an aperture plate configured to form a primary charged-particle beam along a primary optical axis from the emitted charged particles, a plurality of primary charged-particle beam deflectors configured to deflect the primary charged-particle beam to be incident on a surface of a sample to define a center of a field-of-view (FOV), and a controller including circuitry configured to apply a first excitation signal to a primary charged-particle beam deflector of the plurality of primary charged-particle beam deflectors to cause the primary charged-particle beam to scan a portion of the FOV of the sample, and apply a second excitation signal to cause the primary-charged particle beam deflector to compensate for an off-axis aberration of the primary charged-particle beam in the portion of the FOV.
A method for filtering false positives in a charged particle beam detector includes utilizing spatial information of detected charged particle landing events on the detector. A spatial distribution of detected charged particle landing events on the detector is compared to an expected distribution of landing events to determine the probability that the charged particle landing events are real.
A method for performing a lithographic apparatus setup calibration and/or drift correction for a specific lithographic apparatus of a population of lithographic apparatuses to be used in a manufacturing process for manufacturing an integrated circuit extending across a plurality of layers on a substrate. The method includes determining a spatial error distribution of an apparatus parameter across spatial coordinates on the substrate for each lithographic apparatus of the population of lithographic apparatuses and/or each layer of the plurality of layers; determining a reference distribution by aggregating each of the spatial error distributions to optimize the reference distribution such that a spatial distribution of a parameter of interest of the manufacturing process is co-optimized across the population of lithographic apparatuses and/or plurality of layers; and using the reference distribution as a target distribution for the apparatus parameter for each lithographic apparatus and/or layer.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
95.
APPARATUS AND METHOD FOR DETERMINING AN ANGULAR REFLECTIVITY PROFILE
An apparatus comprising a multilayer structure configured to reflect electromagnetic radiation. The apparatus comprises a sensor configured to detect an angular distribution of the electromagnetic radiation after reflection from the multilayer structure. The apparatus comprises a processor configured to generate a first function at least partially based on the angular distribution of the electromagnetic radiation detected by the sensor. The processor is configured to compare the first function to a plurality of known functions associated with a plurality of known angular reflectivity profiles to identify a second function from the plurality of known functions that is most similar to the first function. The processor is configured to determine an angular reflectivity profile of the multilayer structure at least partially based on a known angular reflectivity profile that is associated with the second function.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The disclosure provides an electrical connector for high power in a low pressure environment, the connector comprising: a male connection part configured to be connected to a first power interface, a female connection part for receiving the male connection part and configured to be connected to a second power interface, a first conductive shield enclosing the male connection part and the female connection part, the first conductive shield being electrically connected to at least one of the male connection part and the female connection part, and an isolating part enclosing the first conductive shield.
H01R 13/53 - Bases or cases for heavy dutyBases or cases with means for preventing corona or arcing
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01R 43/26 - Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for engaging or disengaging the two parts of a coupling device
Systems and methods provide the ability to mitigate linear and/or offset coma present in an objective of a metrology tool. A method of reducing an effect of offset coma in a metrology apparatus includes rotating an objective lens element of the metrology apparatus until a best contrast for physically separated first and second portions of a metrology target is determined. A method of reducing an effect of linear coma in a metrology apparatus includes determining an amount of an axially symmetric coma aberration present in a lens system of the metrology device, and moving an optical element of the lens system in an axial z-direction to reduce the determined axially symmetric coma. A lens stop or other lens element may be moved in the z-direction to reduce coma. The two approaches may be combined.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Disclosed is an imaging method comprising obtaining a set of primary deconvolution kernels or a set of impulse responses relating to an optical system used to capture said image; obtaining said image signal, said image signal being subject to one or more imaging effects including at least one or more non-isoplanatic imaging effects; performing a low-rank approximation on said set of primary deconvolution kernels or impulse responses to determine respectively a set of deconvolution modes or a set of impulse response modes, each deconvolution mode comprising a modal secondary deconvolution kernel and a modal weight function and each impulse response mode comprising a modal impulse response and a modal inverse weight function; obtaining at least approximated imaging effect-free object information related to said object by applying said modal secondary deconvolution kernels and modal weight functions or said modal impulse responses and modal inverse weight functions to said image signal.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G06T 5/10 - Image enhancement or restoration using non-spatial domain filtering
Systems, non-transitory computer readable medium, and methods for determining one or more parameters used by an e-beam for an overlay measurement are disclosed. In some embodiments, the method comprises determining an acquisition time for the overlay measurement of a wafer stack based on a plurality of characteristics of the wafer stack and a plurality of backscattered electron (BSE) yields detected at a plurality of features on the wafer stack. The method also comprises determining the one or more parameters including a landing energy of the e-beam based on optimization of the acquisition time for the overlay measurement.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
patents
