Enhancing target features of a pattern imaged onto a substrate is described. This may include adding one or more assist features to a patterning device pattern in one or more locations adjacent to one or more target features in the patterning device pattern. The one or more assist features are added based on two or more different focus positions in the substrate. This also includes shifting the patterning device pattern and/or a design layout based on the two or more different focus positions and the one or more added assist features. This may be useful for improving across slit asymmetry. Adding the one or more assist features to the pattern and shifting the pattern and/or the design layout enhances the target features by reducing a shift caused by across slit asymmetry for a slit of a multifocal lithographic imaging apparatus. This may reduce the shift across an entire imaging field.
A method of controlling output of a radiation source, the method including: periodically monitoring an output energy of the radiation source; determining a difference between a reference energy signal and the monitored output energy; determining a feedback value; determining a desired output energy of the radiation source for a subsequent time period; and controlling an input parameter of the radiation source in dependence on the determined desired output energy during the subsequent time period. If the magnitude of the determined difference between the monitored output energy of the radiation source and the reference energy signal exceeds a threshold value: the determined difference does not contribute to the feedback value; and the determined difference is spread over the subsequent time period according to a reference energy signal adjustment profile and the reference energy signal adjustment profile is added to the reference energy signal for the subsequent time period.
An apparatus includes a first plurality of concave reflecting surfaces; a second plurality of reflecting surfaces facing the first plurality of concave reflecting surfaces such that a region is defined between the first and second pluralities; and an input for an optical beam to enter the region and an output for the optical beam to exit the region. The first and second pluralities of reflecting surfaces are arranged relative to each other so that the optical beam is re-imaged at a reflecting surface of one of the pluralities after only one reflection from a reflecting surface of the other of the pluralities and so that overlap of two or more optical beams on each of the reflecting surfaces is avoided.
As disclosed herein, in a first aspect, a device may comprise; an oscillator producing a light output on a beam path; a target material for interaction with Light on the beam path at an irradiation site; a beam delay on the beam path the beam delay haying a beam folding optical arrangement; and a switch positioned along the beam, path and Interposed between the oscillator and the beam delay; the switch closable to divert at. least a portion of light on the beam path from the beam path, the switch having close time, t1 and the beam path having a Length, L1. along the path from the switch to the irradiation site; with t1 < cL1, where e is the speed of light on the path, to protect the oscillator.
A device is disclosed, herein which may comprise a droplet generator producing droplets of target material; a sensor providing an. intercept time signal when a droplet reaches a preselected location; a delay circuit coupled with said sensor, the delay circuit generating a trigger signal delayed from the. intercept time signal; a. laser source responsive to a trigger signal to produce a laser pulse-; and a system controlling said delay circuit to provide a. trigger signal delayed from the intercept time by a first delay time to generate a light pulse that is focused on a droplet and a trigger signal delayed from the intercept time by a second delay time to generate a light -pulse which is not focused on a droplet.
An extreme ultraviolet light system includes a steering system that steers and focuses an amplified light beam traveling along a propagation direction to a focal plane near a target location within an extreme ultraviolet light chamber, a detection system including at least one detector positioned to detect an image of a laser beam reflected from at least a portion of a target material within the chamber,, a wavefront modification system in the path of the reflected laser beam and between, the target location- and the detection system, and a controller. The -wavefront modification system is configured to modify the wavefront of the reflected laser beam as a function of a target focal plane position along the propagation direction. The controller includes logic for adjusting a location o f the focal plane of the amplified light' beam relative to the target material based on the detected image of the reflected laser beam,
A device is described herein which may comprise an optical amplifier having a gain band including wavelengths λ1 and λ2, with λ1≠ λ2; a pre-pulse seed laser having a tuning module for tuning a pre-pulse output to wavelength λ1; a main pulse seed laser generating a laser output having wavelength, λ2; and a beam combiner for directing the pre-pulse output and the main pulse output on a common path through the optical amplifier.
Devices are described herein which may comprise an optic having a non- planar surface, the non-planar surface having, an optically active portion; and a flow guide directing gas upon the non-planar surface to produce turbulent flow on at least a portion of the optically active portion of the non-planar surface to cool the optic.
An apparatus includes a light source having a gain medium for producing an amplified light beam of a source wavelength along a beam path to irradiate a target material in a chamber and to generate extreme ultraviolet light; and a subsystem overlying at least a portion of an internal surface of the chamber and configured to reduce a flow of light at the source wavelength from the internal surface back along the beam path.
An apparatus includes a light source that produces a light beam, a bandwidth measurement system, a plurality of bandwidth actuation systems, and a control system. Each bandwidth actuation system includes one or more bandwidth actuators and each bandwidth actuation system is connected to an optical feature that is optically coupled to the produced light beam and operable to modify the connected optical feature to select a bandwidth within a bandwidth range of the produced light beam. The control system is connected to the bandwidth measurement system and to the plurality of bandwidth actuation systems. The control system is configured to switch between activating and operating a first bandwidth actuation system and activating and operating a second bandwidth actuation system independently and separately of activating and operating the first bandwidth actuation system based on a provided bandwidth measurement and a selected target bandwidth.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11.
SYSTEMS AND METHOD FOR TARGET MATERIAL DELIVERY PROTECTION IN A LASER PRODUCED PLASMA EUV LIGHT SOURCE
A device is disclosed herein which may comprise a chamber, a source providing a stream of target material droplets delivering target material to an irradiation region in the chamber along a path between a target material release point and the irradiation region, a gas flow in the chamber, at least a portion of the gas flowing in a direction toward the droplet stream, a system producing a laser beam irradiating droplets at the irradiation region to generate a plasma producing EUV radiation, and a shroud positioned along a portion of said stream, said shroud having a first shroud portion shielding droplets from said flow and an opposed open portion.
A device is disclosed herein which may include a plasma generating system comprising a source of target material droplets and a laser producing a beam irradiating the droplets at an irradiation region, the plasma producing EUV radiation, wherein the droplet source comprises a fluid exiting an orifice and a sub-system producing a disturbance in the fluid which generates droplets having differing initial velocities causing the spacing between at least some adjacent droplets to decrease as the droplets travel to the irradiation region.
An extreme ultraviolet light system includes a drive laser system that produces an amplified light beam; a target material delivery system configured to produce a target material at a target location; a beam delivery system configured to receive the amplified light beam emitted from the drive laser system and to direct the amplified light beam toward the target location; and a metrology system. The beam delivery system includes converging lens configured and arranged to focus the amplified light beam at the target location, The metrology system includes a light collection system configured to collect a portion of the amplified light beam reflected from the converging lens and a portion of a guide laser beam reflected from the converging lens. The light collection system includes a dichroic optical device configured to optically separate the portions.
An extreme ultraviolet light system includes a drive laser system that produces an amplified light beam; a target material delivery system configured to produce a target material at a target location; an extreme ultraviolet light vacuum chamber defining an interior vacuum space that houses an extreme ultraviolet light collector and the target location; and a beam delivery system that is configured to receive the amplified light beam emitted from the drive laser system and to direct the amplified light beam toward the target location. The beam delivery system includes a beam expansion system that expands a size of the amplified light beam and a focusing element that is configured and arranged to focus the amplified light beam at the target location.
G06K 7/10 - Methods or arrangements for sensing record carriers by electromagnetic radiation, e.g. optical sensingMethods or arrangements for sensing record carriers by corpuscular radiation
Laser light wavelength control is provided by periodically predicting a next position of a light controlling prism using a model of the prism's motion characteristics. The prediction is then updated if a measurement of laser output, wavelength is obtained. However, because the predictions are made without waiting for a measurement, they can be made more frequently than the laser firing repetition rate and the prism can be repositioned at discrete points in time which can occur more frequently than the laser firing events. This also reduces performance degradation which may he caused by being one pulse behind a laser measurement and the resultant laser control signal being applied.
An EUV lithographic apparatus (100) comprises a source collector apparatus (SO) in which the extreme ultraviolet radiation is generated by exciting a fuel to provide a plasma (210) emitting the radiation. The source collector apparatus (SO) includes a chamber (310) in fluid communication with a guide way (320) external to the chamber (310). A pump (BPS) for circulating buffer gas is part of the guide way (320), and provides a closed loop buffer gas flow (222). The gas flowing through the guide way (302) traverses a gas decomposer (TD1) wherein a compound of fuel material and buffer gas material is decomposed, so that decomposed buffer gas material can be fed back into the closed loop flow path (222).
C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
A method of controlling a spectral property of a light beam includes directing a light beam to a lithography exposure apparatus configured to create a pattern on a wafer; receiving information representative of a spectral property of the light beam; receiving information representative of an optical imaging condition of the lithography exposure apparatus; estimating a characteristic value of the light beam based on the received spectral property information and the received optical imaging condition information; determining whether the estimated light beam characteristic value matches a target light beam characteristic value; and if it is determined that the estimated light beam characteristic value does not match the target light beam characteristic value, adjusting the spectral property of the light beam.
According to aspects of an embodiment of the disclosed subject matter, a line narrowed high average power high pulse repetition laser micro-photolithography light source bandwidth control method and apparatus are disclosed which may comprise a bandwidth metrology module measuring the bandwidth of a laser output light pulse beam pulse produced by the light source and providing a bandwidth measurement; a bandwidth error signal generator receiving the bandwidth measurement and a bandwidth setpoint and providing a bandwidth error signal; an active bandwidth controller providing a fine bandwidth correction actuator signal and a coarse bandwidth correction actuator signal responsive to the bandwidth error. The fine bandwidth correction actuator and the coarse bandwidth correction actuator each may induce a respective modification of the light source behavior that reduces bandwidth error. The coarse and fine bandwidth correction actuators each may comprise a plurality of bandwidth correction actuators.
H01S 3/225 - Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
H01S 3/036 - Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering or replenishingMeans for circulating the gas, e.g. for equalising the pressure within the tube
H01S 3/097 - Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
19.
SYSTEM, METHOD AND APPARATUS FOR DROPLET CATCHER FOR PREVENTION OF BACKSPLASH IN A EUV GENERATION CHAMBER
A system and method generating an extreme ultraviolet light in an extreme ultraviolet light chamber including a collector mirror, a droplet generation system having a droplet outlet aligned to output a plurality of droplets along a target material path and a first catch including a first open end substantially aligned to the target material path and at least one internal surface oriented toward a second end of the first catch, the second end being opposite from the first open end.
A method for producing extreme ultraviolet light includes producing a target material at a target location; supplying pump energy to a gain medium of at least one optical amplifier that has an amplification band to produce an amplified light beam; propagating the amplified light beam through the gain medium using one or more optical components of a set of optical components; delivering the amplified light beam to the target location using one or more optical components of the optical component set; producing with a guide laser a guide laser beam that has a wavelength outside of the amplification band of the gain medium and inside the wavelength range of the optical components; and directing the guide laser beam through the optical component set to thereby align one or more optical components of the optical component set.
A device is described herein which may comprise a chamber, a fluid line, a pressurized source material in the fluid line, a component restricting flow of the source material into the chamber, a sensor measuring flow of a fluid in the fluid line and providing a signal indicative thereof, and a pressure relief valve responsive to a signal to reduce a leak of source material into the chamber in the event of a failure of the component.
A system and method for an extreme ultraviolet light chamber comprising a collector mirror, a cooling system coupled to a backside of the collector mirror operative to cool a reflective surface of the collector mirror and a buffer gas source coupled to the extreme ultraviolet light chamber.
An extreme ultraviolet light system includes a drive laser system, an extreme ultraviolet light chamber including an extreme ultraviolet light collector and a target material dispenser including a target material outlet capable of outputting a plurality of portions of target material along a target material path, wherein the target material outlet is adjustable. The extreme ultraviolet light system further includes a drive laser steering device, a detection system including at least one detector directed to detect a reflection of the drive laser reflected from the first one of the plurality of portions of target material and a controller coupled to the target material dispenser, the detector system and the drive laser steering device. The controller includes logic for detecting a location of a first one of the plurality of portions of target material from a first light reflected from the first target material.
A laser includes a regenerative ring resonator that includes a discharge chamber having electrodes and a gain medium between the electrodes for producing a laser beam; a partially-reflective optical coupler, and a beam modification optical system in the path of the laser beam, The beam modification optical system transversely expands a profile of the laser beam such that the near field laser beam profile uniformly fills each aperture within the laser and such that the regenerative ring resonator remains either conditionally stable or marginally unstable when operating the laser at powers that induce thermal lenses In optical elements Inside the regenerative ring resonator.
Devices and corresponding methods of use are described herein which may comprise an enclosing structure defining a closed loop flow path and a system generating a plasma at a plasma site, e.g. laser produced plasma system, where the plasma site may be in fluid communication with the flow path. For the device, a gas may be disposed in the enclosing structure which may include an ion-stopping buffer gas and/or an etchant. A pump may be provided to force the gas through the closed loop flow path. One or more heat exchangers removing heat from gas flowing in the flow path may be provided. In some arrangements, a filter may be used to remove at least a portion of a target species from gas flowing in the flow path.
An EUV light source device is described herein which may comprise a laser beam travelling along a beam path, at least a portion of the beam path aligned along a linear axis; a material for interaction with the laser beam at an irradiation site to create an EUV light emitting plasma; a first reflector having a focal point, the first reflector positioned with the focal point on the linear axis, the first reflector receiving laser light along the beam path; and a second reflector receiving laser light reflected by the first reflector and directing the laser light toward the irradiation site.
An aspect of the disclosed subject matter includes a method of reducing the laser absorption of a beam reverser prism consisting of at least one of the following: increasing a first distance between a first incident point and a chamfered corner, wherein the first incident point is on a first reflective surface of the prism and the chamfered corner is formed between the first reflective surface and a second reflective surface of the prism, wherein the chamfered corner has a chamfered surface; increasing a second distance between a second incident point and the chamfered corner, wherein the second incident point is on the second reflective surface of the prism; and increasing a reflectivity of the chamfered surface of the chamfered corner of the prism. A method of determining a prime cut for an optical component is also disclosed. A laser including at least one prime cut optical component is also disclosed.
A laser control system contains an oscillator gas chamber and an amplifier gas chamber. A first voltage input is operatively connected to deliver electrical pulses to a first pair of electrodes within the oscillator gas chamber and a second pair of electrodes within the amplifier gas chamber. An output of the gas chambers is an energy dose calculated by a trapezoidal window. A control circuit connects to the first voltage input for modifying the first voltage input. A feedback control loop communicates an output of the gas chambers to the control circuit for modifying the first voltage input.
A mechanism for bandwidth selection includes a dispersive optical element having a body including a reflective face of dispersion including an area of incidence extending in a longitudinal axis direction along the reflective face of the dispersive optical element The body also includes a first end block, disposed at a first longitudinal end of the body and a second end block, disposed at a second longitudinal end of the body, the second longitudinal end being opposite the first longitudinal end The bandwidth selection mechanism also includes a first actuator mounted on a second face of the dispersive optical element, the second face opposite the reflective face, the first actuator having a first end coupled to the first end block and a second end coupled to the second end block, the first actuator being operative to apply equal and opposite forces to the first end block and the second end block
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
30.
HIGH POWER SEED/AMPLIFIER LASER SYSTEM WITH BEAM SHAPING INTERMEDIATE THE SEED AND AMPLIFIER
An apparatus and method of operation for a high power broad band elongated thin beam laser annealing light source, which may comprise a gas discharge seed laser oscillator having a resonance cavity, providing a seed laser output pulse; a gas discharge amplifier laser amplifying the seed laser output pulse to provide an amplified seed laser pulse output; a divergence correcting multi-optical element optical assembly intermediate the seed laser and the amplifier laser. The divergence correcting optical assembly may adjust the size and/or shape of the seed laser output pulse within a discharge region of the amplifier laser in order to adjust an output parameter of the amplified seed laser pulse output. The divergence correcting optical assembly may comprise a telescope with an adjustable focus. The adjustable telescope may comprise an active feedback-controlled actuator based upon a sensed parameter of the amplified seed laser output from the amplifier laser.
In a first aspect, an apparatus for exposing a substrate with EUV radiation is described herein which may comprise a target material; a laser source generating a laser beam having a wavelength, λ, for irradiating the target material to generate EUV radiation, the laser beam defining a primary polarization direction; at least one mirror reflecting the EUV radiation along a path to the substrate; and a polarization filter disposed along the path filtering at least a portion of light having the wavelength, λ.
Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.
The invention refers to an illuminating apparatus for illuminating a sample (66) on a work stage (68) with a narrow illuminating line (70) of controlled energy, said illuminating line (70) being generated from a laser beam (12) propagating along a beam path (13) and being emitted from a laser source (10) and having an dimension in a first direction (x) exceeding an dimension in a second direction (y) being perpendicular to said first direction (x) by a multiple, comprising a beam shaping optical system (80) for shaping said laser beam (12) into a line shape (70a), an energy measuring device (58) for measuring energy of said laser beam (12), an energy control system (76) for generating a control signal (78) upon said measured laser beam energy and for controlling energy output of said laser source (10) upon said control signal (78). The invention is characterized by said energy measuring device (58) being arranged in said beam path (13) after said beam shaping optical system (80) and before said work stage (68) or by said control signal (78) being indicative of an averaged beam energy along the dimension of said line shaped beam (70a) in said first direction (x). The invention further refers to a method for controlling energy of a laser source (10) when illuminating a sample (66) on a work stage (68) with a narrow illuminating line (70), whereby said illuminating line (70) is generated from a laser beam (12) propagating along a beam path (13) and being emitted from said laser source (10) and having an dimension in a first direction (x) exceeding an dimension in a second direction (y) being perpendicular to said first direction (x) by a multiple, comprising the steps of shaping said laser beam (12) into a line (70a), measuring energy of said line shaped laser beam (12), generating a control signal (78) upon said measured laser beam energy, controlling energy output of said laser source (10) upon said control signal (78). According to the invention said control signal (78) is indicative of an averaged beam energy along the dimension of said line shaped beam (70a) in said first direction. According to another aspect of the invention said energy of said laser beam (12) in said beam path (13) is measured after said beam shaping and before said work stage (68).
A device is described herein which may comprise an oscillator having an oscillator cavity length, L0, and defining an oscillator path; and a multi-pass optical amplifier coupled with the oscillator to establish a combined optical cavity including the oscillator path, the combined cavity having a length, Lcombined, where Lcombined = (N + x) * L0, where "N" is an integer and "x" is a number between 0.4 and 0.6.
A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps / acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps / acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
C23C 16/22 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
G01N 21/00 - Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
G01N 21/33 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
G01J 1/00 - Photometry, e.g. photographic exposure meter
37.
ULTRAVIOLET LASER LIGHT SOURCE PULSE ENERGY CONTROL SYSTEM
A method and apparatus is disclosed which may comprise: a gas discharge laser system energy controller which may comprise: a laser system energy controller providing a first laser operating parameter control signal based on an error signal related to a value of the output energy of the laser system compared to a target value for output energy and an energy controller model of the value of the first laser operating parameter necessary to change the value of the laser system output energy to the target value; a first laser system operating parameter control signal modifier providing a modification to the first laser system operating parameter control signal based upon a controller signal modification model of the impact of a second laser system operating parameter on the value of the first laser system operating parameter necessary to change the value of the output energy to the target value.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
38.
SYSTEM MANAGING GAS FLOW BETWEEN CHAMBERS OF AN EXTREME ULTRAVIOLET (EUV) PHOTOLITHOGRAPHY APPARATUS
A gas flow management system may comprise a first and second enclosing walls at least partially surrounding first and second respective spaces; a system generating plasma in the first space, the plasma emitting extreme ultraviolet light; an elongated body restricting flow from the first space to the second space, the body at least partially surrounding a passageway and having a first open end allowing EUV light to enter the passageway from the first space and a second open end allowing EUV light to exit the passageway into the second space, the body shaped to establish a location having a reduced cross-sectional area relative to the first and second ends; and a flow of gas exiting an aperture, the aperture positioned to introduce gas into the passageway at a position between the first end of the body and the location having a reduced cross-sectional area.
Devices and corresponding methods of use are described herein which may comprise an enclosing structure defining a closed loop flow path and a system generating a plasma at a plasma site, e.g. laser produced plasma system, where the plasma site may be in fluid communication with the flow path. For the device, a gas may be disposed in the enclosing structure which may include an ion-stopping buffer gas and / or an etchant. A pump may be provided to force the gas through the closed loop flow path. One or more heat exchangers removing heat from gas flowing in the flow path may be provided. In some arrangements, a filter may be used to remove at least a portion of a target species from gas flowing in the flow path.
A plasma generating system is disclosed having a source of target material droplets, e.g. tin droplets, and a laser, e.g. a pulsed CO2 laser, producing a beam irradiating the droplets at an irradiation region, the plasma producing EUV radiation. For the device, the droplet source may comprise a fluid exiting an orifice and a sub-system producing a disturbance in the fluid which generates droplets having differing initial velocities causing at least some adjacent droplet pairs to coalesce together prior to reaching the irradiation region, hi one implementation, the disturbance may comprise a frequency modulated disturbance waveform and in another implementation, the disturbance may comprise an amplitude modulated disturbance waveform.
Disclosed herein are systems and methods for extending one or both of the discharge electrodes in a transverse discharge gas laser chamber in which one or both the electrodes are subject to a dimensional change due to erosion. Electrode extension can be performed to increase the chamber life, increase laser performance over the life of the chamber, or both. Operationally, the inter-electrode spacing may be adjusted to maintain a specific target gap distance between the electrodes or to optimize a specific parameter of the laser output beam such as bandwidth, pulse-to-pulse energy stability, beam size, etc.
According to aspects of an embodiment of the disclosed subject matter, method and apparatus are disclose that ma y comprise adjusting a differential timing between gas discharges in the seed laser and amplifier laser for bandwidth control, based on the error signal, or for control of another laser operating parameter other than bandwidth, without utilizing any beam magnification control, or adjusting a differential timing between gas discharges in the seed laser and amplifier laser for bandwidth control, based on the error signal, or for control of another laser operating parameter other than bandwidth, while utilizing beam magnification control for other than bandwidth control, and adjusting a differential timing between gas discharges in the seed laser and amplifier laser for bandwidth control, based on the error signal, or for control of another laser operating parameter other than bandwidth, while utilizing beam magnification control for bandwidth control based on the error signal.
A method and apparatus are disclosed which may comprise predicting the gas lifetime for a gas discharge laser light source for a photolithography process, the light source comprising a halogen containing lasing gas may comprise: utilizing at least one of a plurality of laser operating Input and/or output parameters; utilizing a set of at least one parameter of utilization in the photolithography process to determine a gas use model in relation to the respective input or output parameter; predicting the end of gas life based upon the mod and a measurement of the respective input or output parameter. The parameter may comprise a pulse utilization pattern.
A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic, hi one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.
An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre- pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
46.
System for accumulating exposure energy information of wafer and management method of mask for exposure utilizing exposure energy information of wafer accumulated with the system
Disclosed is a management method of a mask for exposure utilizing exposure energy information of a wafer. According to the present invention, in case of exposing wafers in exposure apparatuses, information on masks loaded on exposure apparatuses are calculated from the exposure apparatuses, the light energy values applied during the exposure of wafers by the corresponding masks are calculated, the calculated light energy values are stored in the data server, the same data are collected from all wafer exposure processes performed at plural exposure apparatuses within the semiconductor FAB and the exposure information about the exposure energy relating to plural masks used by plural exposure apparatuses are accumulated and managed. Accordingly, the exposure degree of a mask about the exposure energy, as a direct cause of the contamination of masks such as the crystal growth and haze, is directly calculated and then defects of masks are predicted together with measures according that, so that deterioration of the yield of the semiconductor is prevented and the yield of the semiconductor is increased.
G03B 27/52 - Projection printing apparatus, e.g. enlarger, copying camera Details
G01N 21/00 - Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
47.
System for calculating transmission utility factor value of photo energy for exposure and method for calculating transmission utility factor value of photo energy utilizing the calculation system
Disclosed is a system for calculating transmission utility factor value of photo energy for exposure and a method for calculating transmission utility factor value of photo energy utilizing the calculation system in which the photo energy generated from an excimer laser generator passes various optical systems (which include a lens and a reflection mirror and so on), the photo energy used for exposing a wafer is divided by the photo energy generated from the excimer laser generator and the percentage of the result is finally calculated at real time. According to the present invention, an increase of the exposing time due to the lowering of the photo transmission utility factor value and a lowering of productivity in semiconductor are prevented. According to the present invention, the badness or contamination of the optical systems between the excimer laser generator and the exposure device can be also predicted at real time.
A bandwidth meter apparatus and method for measuring the bandwidth of a spectrum of light emitted from a laser input to the bandwidth meter is disclosed which may comprise an optical bandwidth monitor providing a first output representative of a first parameter which is indicative of the bandwidth of the light emitted from the laser and a second output representative of a second parameter which is indicative of the bandwidth of the light emitted from the laser; and, an actual bandwidth calculation apparatus utilizing the first output and the second output as part of a multivariable equation employing predetermined calibration variables specific to the optical bandwidth monitor, to calculate an actual bandwidth parameter; the multivariable equation comprising a symmetry sensitive term.
An LPP EUV light source is disclosed having an optic positioned in the plasma chamber for reflecting EUV light generated therein and a laser input window. For this aspect, the EUV light source may be configured to expose the optic to a gaseous etchant pressure for optic cleaning while the window is exposed to a lower gaseous etchant pressure to avoid window coating deterioration. In another aspect, an EUV light source may comprise a target material positionable along a beam path to participate in a first interaction with light on the beam path; an optical amplifier; and at least one optic directing photons scattered from the first interaction into the optical amplifier to produce a laser beam on the beam path for a subsequent interaction with the target material to produce an EUV light emitting plasma.
An EUV light source (20) includes a laser source (22) for generating a laser beam (1 12) to irradiate a source material (302) for forming a plasma and emitting EUV light; a beam dump (100') having a receiving structure (306) formed with a shaped surface (310) for receiving the laser beam (112) and source material (300) ejected from a irradiation zone (28); a system (104a, 104b, 106a, 106b) for controlling the temperature of the beam dump (100') within a pre-selected range; and a cooling system (222) for cooling material accumulated in a collection chamber (221) having an orifice (226) for passing source material.
In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions ^nd a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
B32B 9/00 - Layered products essentially comprising a particular substance not covered by groups
B32B 7/02 - Physical, chemical or physicochemical properties
G01J 1/00 - Photometry, e.g. photographic exposure meter
A window assembly for a pressurized laser discharge chamber is disclosed and may include a housing that is formed with a recess. The assembly may also include an optic having a first side that is exposed to chamber pressure and an opposed second side, and a compliant member that may be positioned in the recess to space the second side of the optic from the housing under normal chamber operating pressures. For the assembly, the compliant member may be compressible to allow the optic to mechanically abut the assembly housing during a chamber overpressure.
A method and apparatus is disclosed for operating a laser output light beam pulse line narrowing mechanism that may comprise a nominal center wavelength and bandwidth selection optic; a static wavefront compensation mechanism shaping the curvature of the selection optic; an active wavefront compensation mechanism shaping the curvature of the selection optic and operating independently of the static wavefront compensation mechanism. The method and apparatus may comprise the nominal center wavelength and bandwidth selection optic comprises a grating; the static wavefront compensation mechanism applies a pre-selected bending moment to the grating; the active wavefront compensation mechanism applies a separate selected bending moment to the grating responsive to the control of a bending moment controller based on bandwidth feedback from a bandwidth monitor monitoring the bandwidth of the laser output light beam pulses. The active wavefront compensation mechanism may comprise a pneumatic drive mechanism.
A chamber for a gas discharge laser is disclosed and may include a chamber housing having a wall, the wall having an inside surface surrounding a chamber volume and an outside surface, the wall also being formed with an orifice. For the chamber, at least one electrical conductor may extend through the orifice to pass an electric current into the chamber volume. A member may be disposed between the conductor and the wall for preventing gas flow through the orifice to allow a chamber pressure to be maintained in the volume. The chamber may further comprise a pressurized compartment disposed adjacent to the orifice for maintaining a pressure on at least a portion of the outside surface of the wall to reduce bowing of the wall near the orifice due to chamber pressure.
A beam mixer for increasing intensity symmetry along a selected axis of a beam (wherein the beam extends from a first edge to a second edge along the axis) is disclosed and may include a plurality of mirrors establishing a spatially inverting path. For the beam mixer, the inverting path may have a beginning and an end and may be characterized in that a part of the beam near the first beam edge at the beginning of the path translates to the second beam edge at the end of the path. For this aspect, the beam mixer may further include an optic dividing the beam into first and second beam portions, the optic placing the first portion onto the inverting path and recombining the first and second portions onto a common path after the first portion has traveled along the inverting path thereby mixing the beam.
A laser light source is disclosed having a laser oscillator producing an output beam; a first amplifier amplifying the output beam to produce a first amplified beam, and a second amplifier amplifying the first amplified beam to produce a second amplified beam. For the source, the first amplifier may have a gain medium characterized by a saturation energy (Es, 1) and a small signal gain (go, 1); and the second amplifier may have a gain medium characterized by a saturation energy (Es, 2) and a small signal gain (go, 2), with (go, 1) ᡶ (go, 2) and (ES, 2) ᡶ (Es, 1). In another aspect, a laser oscillator of a laser light source may be a cavity dumped laser oscillator, e.g. a mode-locked laser oscillator, q-switched laser oscillator and may further comprising a temporal pulse stretcher.
H01S 4/00 - Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups , or , e.g. phonon masers, X-ray lasers or gamma-ray lasers
A method and apparatus are disclosed for measuring a characteristic, e.g. spectral bandwidth, of a light beam. The apparatus may comprise an etalon for generating an interference pattern having at least one light cone, an arrangement of detector elements, the arrangement receiving a portion of the light cone and producing a signal indicative of the characteristic; and an auxiliary detector positioned to receive a portion of the light cone and produce a signal indicative of an alignment between the etalon and the linear arrangement.
A thin beam laser crystallization apparatus for selectively melting a film deposited on a substrate is disclosed having a laser source producing a pulsed laser output beam, the source having an oscillator comprising a convex reflector and a piano output coupler; and an optical arrangement focusing the beam in a first axis and spatially expanding the beam in a second axis to produce a line beam for interaction with the film.
According to aspects of an embodiment of the disclosed subject matter an overview of the architecture may start with the fact that the functionality of MSC software may be provided by at least two top-level. components a Server Daemon Process and a GUI Client. The Server Daemon Process, e.g., server (20 ) can be responsible for executing the device commands and monitoring the status of the devices, while the GUI Client, e.g.. GUI (40) can be responsible for taking user specific information recipe definitions from the user and sending user commands to the Server Daemon Process (40). The GUI Client (10) can also display the status of the devices and the progress of the crystallization process to the user: According to aspects of an embodiment of the disclosed subject matter, an OEM schema database (22) may be separated from an MSC schema database (24). This may be because the OEM schema database (22) may contain read-only information, e.g., data task definitions data. The tool users can be not expected to modify it. By keeping the OEM schema data separate from the MSC schema data, it may be easy to upgrade the system with new task definitions from the work system supplier, e.g., the MSC system manufacturer (the OEM) and also easier, e.g., for the overall system to be customized to a particular user's needs, e.g., the best way to optimize for throughput for the user's particular manufacturing system being controlled and other needs.
An apparatus and method is disclosed which include a high power excimer or molecular fluorine gas discharge laser DUV light source system which includes a pulse stretcher which includes an optical delay path mirror, an optical delay path mirror gas purging assembly which includes a purging gas supply system directing purging gas across a face of the optical delay line mirror. The optical delay path mirror includes a plurality of optical delay path mirrors; the purging gas supply system may direct purging gas across a face of each of the plurality of optical delay line mirrors. The purging gas supply system includes a purging gas supply line; a purging gas distributing and directing mechanism which direct purging gas across the face of the respective optical delay path mirror.
A gas discharge laser system producing a laser output pulse and a method of operating such a system is disclosed which may comprise a pulse stretcher which may comprise a laser output pulse optical delay initiating optic directing a portion of the laser output pulse along a laser system output pulse optical axis and diverting a portion of the output pulse into an optical delay having an optical delay path and which may comprise a plurality of confocal resonators in series aligned to deliver an output of the optical delay to the laser output pulse optical delay initiating optic; an optical axis alignment mechanism comprising an radial mirror positioning mechanism operable to position the output of the optical delay to the align with the portion of the laser output pulse transmitted along the optical axis of the portion of the laser system output pulse transmitted by the laser output pulse optical delay initiating optic.
A method and apparatus is disclosed which may comprise detecting the bandwidth of laser output light pulses of a pulsed laser utilizing an array of light detecting elements by the steps which may comprise passing a portion of the laser output light produced by the pulsed laser to the array of light detecting elements in a manner that shifts the portion of the laser beam across the array of light detecting elements to avoid aliasing artifacts in output of the light detecting array. The portion of the image formed by the laser output light may be under-sampled, e.g., in the spatial or time domains. The relevant feature size of an image of an output of a fringe pattern generating element being sampled may comprise a size that is small with respect to the size of individual light detecting elements in the array of light detecting elements.
According to aspects of an embodiment of the disclosed subject matter, a line narrowed high average power high pulse repetition laser micro-photolithography light source bandwidth control method and apparatus are disclosed which may comprise a bandwidth metrology module measuring the bandwidth of a laser output light pulse beam pulse produced by the light source and providing a bandwidth measurement; a bandwidth error signal generator receiving the bandwidth measurement and a bandwidth setpoint and providing a bandwidth error signal; an active bandwidth controller providing a fine bandwidth correction actuator signal and a coarse bandwidth correction actuator signal responsive to the bandwidth error. The fine bandwidth correction actuator and the coarse bandwidth correction actuator each may induce a respective modification of the light source behavior that reduces bandwidth error. The coarse and fine bandwidth correction actuators each may comprise a plurality of bandwidth correction actuators.
A method and apparatus may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser output light beam of pulses, which may comprise a ring power amplification stage wherein the output of the seed laser oscillator passes through the amplifying gain medium of the ring power amplification stage at least two times per loop.
Systems and methods are disclosed for shaping a laser beam for interaction with a film in which the laser beam travels along a beam path and defines a short- axis and a long-axis. In one aspect, the system may include a first short-axis element having an edge positioned at a distance, dls along the beam path from the film and a second short-axis element having an edge positioned at a distance, d2, along the beam path from the film, with d2 ឬ d1. An optic may be positioned along the beam path between the second element and the film for focusing the beam in the short-axis for interaction with the film. In another aspect, a system may be provided having a mechanism operative to selectively adjust the curvature of one or both of the edges of the short-axis element.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
Systems and methods are disclosed for shaping laser light as a line beam for interaction with a film that may have an imperfect, non-planar surface. The system may include a beam stop that defines an edge; a sensor that measures a distance between a selected point on a surface of the film and a reference plane and generates a signal representative of the measured distance; and an actuator coupled to the beam stop and responsive to the signal to move a portion of beam stop edge. Movement of the beam stop edge portion shifts a corresponding portion of the focused line beam in a direction normal to the reference plane to produce a line beam that more closely conforms to the surface profile of the film.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
An EUV light source and method of operating same is disclosed which may comprise: an EUV plasma production chamber comprising a chamber wall comprising an exit opening for the passage of produced EUV light focused to a focus point; a first EUV exit sleeve comprising a terminal end comprising an opening facing the exit opening; a first exit sleeve chamber housing the first exit sleeve and having an EUV light exit opening; a gas supply mechanism supplying gas under a pressure higher than the pressure within the plasma production chamber to the first exit sleeve chamber. The first exit sleeve may be tapered toward the terminal end opening, and may, e.g., be conical in shape comprising a narrowed end at the terminal end.
Systems and methods are disclosed for shaping and homogenizing a laser beam for interaction with a film. The shaping and homogenizing system may include a lens array and a lens that is positioned to receive laser light from the lens array and produce a respective elongated image in a plane for each lens in the lens array. In addition, the system may include a beam stop having an edge that is positioned in the plane, and a moveable mount rotating a lens of the lens array to vary an alignment between one of the elongated images and the beam stop edge.
An optical coating and method for coating an optical element are disclosed. The optical element substrate may be made of fused silica and the coating may include a non-fluoride adherence layer such as SiO2 that is deposited on the substrate to overlay and contact a surface of the substrate. The coating may further include a multilayer system having at least one layer of a dielectric fluoride material, the multilayer system overlaying the non-fluoride adherence layer.
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
B32B 19/00 - Layered products essentially comprising natural mineral fibres or particles, e.g. asbestos, mica
B32B 9/00 - Layered products essentially comprising a particular substance not covered by groups
70.
6K PULSE REPETITION RATE AND ABOVE GAS DISCHARGE LASER SYSTEM SOLID STATE PULSE POWER SYSTEM IMPROVEMENTS
A method and apparatus for operating a very high repetition gas discharge laser system magnetic switch pulsed power system is disclosed, which may comprise a solid state switch, a charging power supply electrically connected to one side of the solid state switch; a charging inductor electrically connected to the other side of the solid state switch; a deque circuit electrically in parallel with the solid state switch comprising a deque switch; a peaking capacitor electrically connected to the charging inductor, a peaking capacitor charging control system operative to charge the peaking capacitor by opening the deque switch and leaving the solid state switch open and then shutting the solid state switch. The solid state switch may comprise a plurality of solid state switches electrically in parallel.
A method of providing the service of obtaining information for a client is disclosed, which may comprise, providing a search service brokering internet location; providing an information search identification internet location accessible on or through the search service brokering internet location; providing an information search reference internet location associated with the information search identification internet location; and providing access to a searcher to the information search reference internet location to log in a reference. The search service brokering internet location may comprise a search service broker web-site; and the search identification internet location may comprise a search service broker web-site search web-page; and, the search reference internet location may comprise a search service broker web-site reference web-page. The method may also comprise date stamping the log in of a reference.
A corona-discharge type, preionizer assembly for a gas discharge laser is disclosed. The assembly may include an electrode and a hollow, dielectric tube that defines a tube bore. In one aspect, the electrode may include a first elongated conductive member having a first end disposed in the bore of the tube. In addition, the electrode may include a second elongated conductive member having a first end disposed in the bore and spaced from the first end of the first conductive member. For the assembly, the first and second conductive members may be held at a same voltage potential.
A method and apparatus are disclosed for controlling bandwidth in a multi- portion laser system comprising a first line narrowed oscillator laser system portion providing a line narrowed seed pulse to an amplifier laser system portion, may comprise utilizing a timing difference curve defining a relationship between a first' laser system operating parameter other than bandwidth and the timing difference and also a desired point on the curve defining a desired timing difference, wherein each unique operating point on the curve corresponds to a respective bandwidth value; determining an actual offset from the timing difference at the desired point on the curve to an actual operating point on the curve; determining an error between the actual offset and a desired offset corresponding to a desired bandwidth; modifying the firing differential timing to remove the error between the actual offset and the desired offset.
Systems and methods for EUV Light Source metrology are disclosed. In a first aspect, a system for measuring an EUV light source power output may include a photoelectron source material disposed along an EUV light pathway to expose the material and generate a quantity of photoelectrons. The system may further include a detector for detecting the photoelectrons and producing an output indicative of EUV power. In another aspect, a system for measuring an EUV light intensity may include a multi-layer mirror, e.g., Mo/Si, disposable along an EUV light pathway to expose the mirror and generate a photocurrent in the mirror. A current monitor may be connected to the mirror to measure the photocurrent and produce an output indicative of EUV power. In yet another aspect, an off-line EUV metrology system may include an instrument for measuring a light characteristic and MoSi2/Si multi layer mirror.
An apparatus and method is disclosed which may comprise a laser produced plasma EUV system which may comprise a drive laser producing a drive laser beam (fig. 4, 172); a drive laser beam first path having a first axis; a drive laser redirecting mechanism (fig. 4, 170) transferring the drive laser beam from the first path to a second path, the second path having a second axis; an EUV collector optical element (fig. 4, 30) having a centrally located aperture; and a focusing mirror (fig. 4, 180) in the second path and positioned within the aperture and focusing the drive laser beam onto a plasma initiation site located along the second axis (fig. 4, 28). The apparatus and method may comprise the drive laser beam is produced by a drive laser having a wavelength such that focusing on an EUV target droplet of less than about 100 &mgr;m at an effective plasma producing energy if not practical in the constraints of the geometries involved utilizing a focusing lens. The drive laser may comprise a CO2 laser. The drive laser redirecting mechanism may comprise a mirror.
In a first aspect, a lithography apparatus may comprise a mask designed using optical proximity correction (OPC), a pulsed laser source, and an active bandwidth control system configured to increase the bandwidth of a subsequent pulse in response to a measured pulse bandwidth that is below a predetermined bandwidth range and increase a bandwidth of a subsequent pulse in response to a measured pulse bandwidth that is above the predetermined bandwidth range. In another aspect an active bandwidth control system may include an optic for altering a wavefront of a laser beam in a laser cavity of the laser source to selectively adjust an output laser bandwidth in response to the control signal. In yet another aspect, the bandwidth of a laser having a wavelength variation across an aperture may be actively controlled by an aperture blocking element that is moveable to adjust a size of the aperture.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
A line narrowed gas discharge laser system and method of operating same is disclosed which may comprise a dispersive center wavelength selective element; a beam expander comprising a plurality of refractive elements; a refractive element positioning mechanism positioning at least one of the refractive elements to modify an angle of incidence of a laser light beam on the dispersive center wavelength selection element; each of the dispersive center wavelength selection element and the beam expander being aligned with each other and with a housing containing at least the dispersive center wavelength selection element; a housing positioning mechanism positioning the housing with respect to an optical axis of the gas discharge laser system. The dispersive element may comprise a grating and the beam expander may comprise a plurality of prisms. The housing may contain the dispersive center wavelength selective element and the beam expander. The housing positioning element may comprise a position locking mechanism.
An EUV light generation system and method is disclosed that may comprise a droplet generator producing plasma source material target droplets traveling toward the vicinity of a plasma source material target irradiation site; a drive laser; a drive laser focusing optical element having a first range of operating center wavelengths; a droplet detection radiation source having a second range of operating center wavelengths; a drive laser steering element comprising a material that is highly reflective within at least some part of the first range of wavelengths and highly transmissive within at least some part of the second range of center wavelengths; a droplet detection radiation aiming mechanism directing the droplet detection radiation through the drive laser steering element and the lens to focus at a selected droplet detection position intermediate the droplet generator and the irradiation site. The apparatus and method may further comprise a droplet detection mechanism that may comprise a droplet detection radiation detector positioned to detect droplet detection radiation reflected from a plasma source material droplet.
An EUV light source is disclosed which may comprise at least one optical element having a surface, such as a multi-layer collector mirror; a laser source generating a laser beam; and a source material irradiated by the laser beam to form a plasma and emit EUV light. In one aspect, the source material may consist essentially of a tin compound and may generate tin debris by plasma formation which deposits on the optical element and, in addition, the tin compound may include an element that is effective in etching deposited tin from the optical element surface. Tin compounds may include SnBr4, SnBr2 and SnH4. In another aspect, an EUV light source may comprise a molten source material irradiated by a laser beam to form a plasma and emit EUV light, the source material comprising tin and at least one other metal, for example tin with Gallium and / or Indium.
An extreme ultraviolet light source collector erosion mitigation system and method may include a multilayered mirror having an outer surface. The outer surface of the mirror can have a capping material subject to erosion due to interaction with materials created in an extreme ultraviolet light-creating plasma. The system may include a replacement material generator, positioned to deliver a replacement material including the capping material to the collector outer surface at a rate sufficient to compensate for the erosion. Replacement material generators may include generators positioned to deliver replacement material to a selected portion of the collector outer surface. The generators may use a mechanism to sputter the replacement material to the collector outer surface.
An EUV light source collector erosion mitigation method and apparatus for a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma, is disclosed which may comprise including within an EUV plasma source material a replacement material. The replacement material may comprise the same material as the capping material of the multilayered mirror. The replacement material may comprise a material that is essentially transparent to light in a selected band of EUV light, e.g., a spectrum of EUV light generated in a plasma of a plasma source material. The replacement material may comprise a material not susceptible to being etched by an etching material used to remove deposited plasma source material from the collector, e.g., a halogen etchant.
A laser produced plasma ('LPP') extreme ultraviolet ('EUV') light source and method of operating same is disclosed which may comprise an EUV plasma production chamber (12) having a chamber wall (14); a drive laser entrance window (16) in the chamber wall; a drive laser entrance enclosure (20) intermediate the entrance window (16) and a plasma initiation site (not shown) within the chamber and comprising an entrance enclosure distal end opening; at least one aperture plate intermediate the distal opening (120) and the entrance window comprising at least one drive laser passage aperture (92). The at least one aperture plate may comprise at least two aperture plates comprising a first aperture plate and a second aperture plate defining an aperture plate interim space (not shown). The at least one drive laser aperture passage (80) may comprise at least two drive laser aperture passages (82, 84).
An apparatus and method for cleaning a plasma source material compound from a plasma produced EUV light source collector optic which may comprise reacting the plasma source material compound with hydrogen to form a hydride of the plasma source material from the plasma source material contained in the plasma source material compound on the collector optic. The method may further comprise initiating the reacting by introducing hydrogen into a plasma formation chamber containing the collector optic, and may further comprise removing the hydride from the collector optic, e.g., by cleaning plasma action and/or plasma source material sputtering, or other means as may be determined to be effective. An apparatus and method of extending the useful life of a plasma produced EUV light source collector coating layer may comprise in situ replacement of the material of the coating layer by deposition of the coating layer material onto the coating layer.
A system for protecting an internal component (30) of an EUV light source (20) from ions (206a, 206b) generated at a plasma formation site (28) and initially directed toward the internal component (30), which includes at least one foil plate (180) interposed between die internal component (30) and die plasma formation site (28) and having a surface (208a, 208b) substantially aligned along a line extending from the plasma formation site (28) to die internal component (30); and a magnetic source (200a, 200b) for generating a magnetic field (B2) to deflect the ions (206a, 206b) into die foil plate surface (208a, 208b).
CARL ZEISS INDUSTRIELLE MESSTECHNIK GMBH (Germany)
Inventor
Das, Palash, P.
Hoffmann, Thomas
Sandstrom, Richard, L.
Boucky, Otto
Stumpp, Ernst
Matzkovits, Berthold
Hoell, Michael
Walther, Joerg
Brenner, Kurt
Grupp, Guenter
Abstract
Systems and methods are disclosed for focusing a beam for an interaction with a film deposited on a substrate wherein the focused beam defines a short axis and a long axis. In one aspect, the system may include a detecting system to analyze light reflected from the film on an image plane to determine whether the beam is focused in the short axis at the film. In still another aspect, a system may be provided for positioning a film (having an imperfect, non-planar surface) for interaction with a shaped line beam.
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
86.
SYSTEMS AND METHODS INTERACTING BETWEEN A LASER AND FILM DEPOSITED
A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01S 3/08 - Construction or shape of optical resonators or components thereof
patents
