Abstract

A silicon carbide ingot having micropipes in a seed crystal closed and being reduced in the gathering of screw dislocations, a method for manufacturing the silicon carbide ingot, and a method for manufacturing a silicon carbide wafer are provided. The silicon carbide ingot includes a seed crystal composed of a silicon carbide single crystal and having micropipes being hollow defects; a buffer layer provided on the seed crystal and composed of silicon carbide; and a bulk crystal growth layer provided on the buffer layer and composed of silicon carbide. The buffer layer and the bulk crystal growth layer have a plurality of screw dislocations continuous with the micropipes closed with the buffer layer, and the plurality of screw dislocations having the micropipe in common in the bulk crystal growth layer are 150 um or more apart from each other.

IPC Classes  ?

• C30B 29/36 - Carbides
• C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
• C01B 32/956 - Silicon carbide
• H10D 62/822 - Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
• H10D 62/832 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe