There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment is a phase shift mask having a circuit pattern by application of exposure light having a wavelength of 200 nm or less, the phase shift mask including a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to the exposure light to be transmitted to a predetermined extent, the protective film (13) has a refractive index n in a range of 1.2 or more and 2.6 or less with respect to the exposure light and an attenuation coefficient k in a range of 0.0 or more and 0.4 or less, and in a case where a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.
Provided are a photomask blank capable of forming a nanofabrication resist pattern on a resist film with a high accuracy, a method for manufacturing a photomask, and a photomask manufactured by the method. A mask blank (100) according to the present embodiment is a mask blank used to manufacture a phase shift mask (200), to which exposure light having a wavelength of 200 nm or less is applied, and includes, in the following order, a translucent substrate (1), a phase shift film (2), and a light shielding film (3), and a hard mask film (4), in which the light shielding film (3) is formed of a material containing Cr, the hard mask film (4) includes a lower layer (41) positioned on a side of the light shielding film (3), and an upper layer (42) configuring an outermost layer of the hard mask film (4), the lower layer (41) contains at least one selected from Ta, Te, Ru, and a compound thereof, the upper layer (42) contains Ta or a Ta compound, and the compound contains at least one selected from O, N, and C.
The purpose of the present invention is to provide an EUV photomask blank and an EUV photomask having high resistance to hydrogen radicals, low EUV reflectance, and a high OD value. A reflective mask blank (10) according to the present embodiment comprises at least a substrate (1), a multilayer reflective film (2), a capping layer (3), and a low-reflection part (5). The low-reflection part (5) is formed by alternately laminating a first absorption film (51) and a second absorption film (52). The first absorption film (51) has high hydrogen radical resistance, and the extinction coefficient or refractive index of the first absorption film (51) is different from the extinction coefficient or refractive index of the second absorption film (52). The extinction coefficient of the second absorption film (52) with respect to EUV light is 0.04 or more.
The purpose of the present invention is to provide: a photomask that can be easily and accurately inspected even if a device pattern of the photomask has a curved shape; and a method for inspecting the photomask. This photomask has a device region in which a device pattern is formed, and an inspection region (122) which is provided in a region other than the device region and in which an inspection pattern is formed. A Lissajous figure of a closed curve obtained by synthesizing displacement amounts (x, y) of a single vibration period in two directions orthogonal to each other, which are represented by the following equations (1) and (2), is formed in the inspection region (122) as an inspection pattern (122C). (1): x = A cos (at) (2): y = B sin (bt + δ) where A and B are amplitudes, a and b are frequencies, t is time, and δ is an initial phase difference.
There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment includes a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to exposure light to be transmitted to a predetermined extent, the protective film (13) contains at least one selected from a tantalum metal, a tantalum compound, a tungsten metal, a tungsten compound, a tellurium metal, or a tellurium compound, and when a film thickness of the phase shift film (12) is denoted by d1 and a film thickness of the protective film (13) is denoted by d2, d2 is thinner than d1, and d2 is 15 nm or less.
Provided are a phase shift mask blank that suppresses the formation of haze on a phase shift film surface and reduces film peeling during cleaning or a level difference in a cross-section of a modified portion during modification etching to improve transfer performance, a phase shift mask, and a method for manufacturing a phase shift mask. A phase shift mask blank (10) according to an embodiment of the present invention is a phase shift mask blank used for producing a phase shift mask to which exposure light having a wavelength of 200 nm or less is applied, the phase shift mask blank (10) including a transparent substrate (11) and a phase shift film (12), in which the phase shift film (12) includes a phase difference and transmittance adjustment layer (13), a protective layer against gas permeation (15), and a compositionally graded layer (14), and in the compositionally graded layer (14), a content of a component configuring the phase difference and transmittance adjustment layer (13) decreases from the substrate side (11) toward the protective layer against gas permeation (15) side, and a content of a component configuring the protective layer against gas permeation (15) increases from the substrate (11) side toward the protective layer against gas permeation (15) side.
There are provided a reflective photomask capable of reducing the shadowing effect and a method for manufacturing the reflective photomask. A reflective photomask (100) according to one aspect of the present disclosure includes: a substrate (11)); a reflective layer (12) having a multi-layer film structure formed on the substrate (11) and configured to reflect an EUV light; a protective layer (13) formed on the reflective layer (12) and configured to protect the reflective layer (12); and an absorption pattern layer (14a) formed on the protective layer (13) and formed with a pattern and configured to absorb the EUV light; in which the absorption pattern layer (14a) contains a material having an extinction coefficient k to the EUV light larger than 0.041, and a side wall angle θ formed by the side wall of the absorption pattern layer (14a) and the substrate (11) is less than 90°.
There are provided a reflective photomask blank and a reflective photomask suppressing or reducing the shadowing effect of a reflective photomask for patterning transfer using a light having a wavelength in the extreme ultraviolet region as a light source and having hydrogen radical resistance. A reflective photomask blank (10) according to this embodiment includes: a substrate (1); a reflective part (5); and a low reflective part (4) in this order, in which the low reflective part (4) includes a multi-layer reflective film (2) and a capping layer (3), the low reflective part (4) contains a high extinction coefficient material, Ta, and at least one of a material group consisting of Ti, Nb, W, and Mo and contains the high extinction coefficient material in a proportion larger than 50 at %, the content ratio of the at least one of the material group consisting of Ti, Nb, W, and Mo in the low reflective part (4) is equal to or less than the content ratio of Ta, the total film thickness of the low reflective part (4) is 45 nm or less, and the OD value of the low reflective part (4) is 1.0 or more.
Provided are a phase shift mask blank that can sufficiently suppress the formation of haze on a phase shift film surface (on a phase mask), a phase shift mask having reduced haze defects, a method for manufacturing the phase shift mask, and a method for modifying the phase shift mask by electron beam modification etching. A phase shift mask blank (10) according to an embodiment of the present invention is a phase shift mask blank used for producing a phase shift mask to which exposure light having a wavelength of 200 nm or less is applied, the phase shift mask blank including: a transparent substrate (11); a phase shift film (14) formed on the transparent substrate (11); and a light shielding film (15) formed on the phase shift film (14), in which the phase shift film (14) is a multi-layer phase shift film in which a plurality of the phase layers (12) and a plurality of the protective layers (13) are alternately deposited, and a modification etching rate during electron beam modification of the protective layer (13) is higher than a modification etching rate of the phase layer (12).
There are provided a reflective photomask and a reflective photomask blank having a high contrast of a minute pattern to an inspection light and capable of minimizing the shadowing effect in EUV exposure. A reflective photomask blank (100) of this embodiment includes: a substrate (11); a reflective part (17); and a low reflective part (18), in which the low reflective part (18) is a multi-layer structural body having at least two or more layers including an absorption layer (14) and an outermost layer (15), an extinction coefficient k to a wavelength of 13.5 nm of the absorption layer (14) is k>0.041, and the film thickness of the low reflective part (18) is a film thickness satisfying 0.5×da+dc≤21.5 nm or a film thickness satisfying 0.5×da+dc≥27.5 nm, wherein the film thickness of the absorption layer (14) is da and the film thickness of the outermost layer (15) is dc.
There are provided a reflective photomask and a reflective photomask blank having high transfer performance while suppressing the influence of the shadowing effect. A reflective photomask blank (100) according to this embodiment includes: a substrate (11); a reflective part (17) formed on the substrate (11) and configured to reflect an incident light; and a low reflective part (18) formed on the reflective part (17) and configured to absorb an incident light, in which the low reflective part (18) is a multi-layer structural body having at least two or more layers including an absorption layer (14) and a phase shift layer (15), the absorption layer (14) and the phase shift layer (15) are deposited in this order on the reflective part (17), the optical constant to a wavelength of 13.5 nm of a material constituting the absorption layer (14) satisfies an extinction coefficient k>0.04, and the optical constant to the wavelength of 13.5 nm of a material constituting the phase shift layer (15) satisfies a refractive index n<0.94 and the extinction coefficient k<0.02.
There is provided a reflective photomask blank capable of suppressing or reducing the shadowing effect of a reflective photomask for patterning transfer using a light having a wavelength in the extreme ultraviolet region as a light source and sufficiently having heat resistance in exposure. The reflective photomask blank is configured to have a substrate 1, a reflective layer 2 including a multi-layer film formed on the substrate 1, and an absorption layer 4 formed on the reflective layer 2. The absorption layer 4 contains a total of 50 at % or more of indium (In) and nitrogen (N). The atomic number ratio (N/In) of nitrogen (N) to indium (In) in the absorption layer 4 is set to 0.5 or more and 1.5 or less. The layer thickness of the absorption layer 4 is set to 17 nm or more and 45 nm or less.
This invention provides a reflective photomask blank and a reflective photomask suppressing or reducing the shadowing effect of a reflective photomask for patterning transfer using a light having a wavelength in the extreme ultraviolet region as a light source and having high interlayer adhesion between a capping layer and a low reflective part. A reflective photomask blank (10) according to this embodiment includes a substrate (1), a reflective part (5), and a low reflective part (4), in which the reflective part (5) includes a multi-layer reflective film (2) and a capping layer (3), the capping layer (3) contains Ru, the low reflective part (4) contains 40 at % or more of a material selected from Ag, Co, In, Pt, Sn, Ni, and Te, and compounds thereof, and a region at least 2 nm thick from the capping layer (3) side of the low reflective part (4) contains 25 at % or more of a material belonging to a first material group or 30 at % or more of a material belonging to a second material group, and the total film thickness of the low reflective part (4) is 45 nm or less.
The present invention provides a reflective mask capable of reducing the shadowing effect and having sufficient hydrogen radical resistance and a method for producing the reflective mask. A reflective mask (100) according to this embodiment includes: a substrate (11); a reflective film (12) reflecting an EUV light having a multi-layer film structure formed on the substrate (11); a protective film (13) formed on the reflective film (12) and protecting the reflective film (12); an absorption film pattern (14a) absorbing the EUV light formed on the protective film (13); and an oxide coating (15) formed on the absorption film pattern (14a), in which the absorption film pattern (14a) contains Sn and a metal element other than Sn and has a ratio of the atomic weight of Sn to the total atomic weight of the metal element other than Sn (Sn/Metal element other than Sn) within the range of 1 or more and less than 20 and the oxide coating (15) is resistant to hydrogen radicals and is formed on the surface and the side surfaces of the absorption film pattern (14a).
There are provided a reflective photomask blank and a reflective photomask which improve the dimensional accuracy and the shape accuracy of a pattern to be transferred onto a wafer and enable the long use. A reflective photomask blank (10) according to this embodiment includes: a substrate (1); a reflective layer (2); and an absorption layer (4) in this order, in which the absorption layer (4) is a layer containing a material of a first material group and containing a material of a second material group, the content of the material of the first material group decreases from the side of the substrate (1) toward the side of an outermost surface (4a) of the absorption layer (4), and the content of the material of the second material group increases from the side of the substrate (1) toward the side of the outermost surface (4a) of the absorption layer (4). The first material group contains Te, Co, Ni, Pt, Ag, Sn, In, Cu, Zn, and Bi, and oxides, nitrides, and oxynitrides thereof. The second material group contains Ta, Cr, Al, Si, Ru, Mo, Zr, Ti, Zn, In, V, Hf, and Nb, and oxides, nitrides, and oxynitrides thereof.
There are provided a phase shift mask blank capable of sufficiently suppressing the generation of a haze on a mask, a phase shift mask with few haze defects, and a method for manufacturing the phase shift mask. A phase shift mask blank (10) according to this embodiment is a phase shift mask blank used for producing a phase shift mask to which an exposure light with a wavelength of 200 nm or less is applied, and the phase shift mask blank (10) includes: a substrate (11); and a phase shift film (14) formed on the substrate (11), in which the phase shift film (14) includes a phase layer (12) capable of adjusting each of the phase and the transmittance by a predetermined amount with respect to a transmitting exposure light and a protective layer (13) formed on the phase layer (12) and preventing gas permeation into the phase layer (12), when the film thickness of the phase layer (12) is defined as d1 and the film thickness of the protective layer (13) is defined as d2, the film thickness (d1) of the phase layer (12) is larger than the film thickness (d2) of the protective layer (13) and the film thickness (d2) of the protective layer (13) is 15 nm or less.
There are provided a reflective mask blank in which a fine absorption film pattern is formed even when a high-absorbent material is used as an absorption film of an EUV mask, whereby the shadowing effect can be reduced and electron beam repair etching can be performed and a reflective mask blank for producing the same. A reflective mask blank (10) according to this embodiment includes: a substrate (1); a multi-layer reflective film (2) reflecting an EUV light having a multi-layer structure formed on the substrate (1); a capping layer (3) protecting the multi-layer reflective film (2) formed on the multi-layer reflective film (2); and an absorption film (4) absorbing the EUV light formed on the capping layer (3), in which the absorption film (4) contains 50% by atom or more of elements constituting at least one of tin oxide (SnO) and indium oxide (InO) and contains a material easy to be etched by a fluorine-based gas or a chlorine-based gas.
The present invention is intended to provide a reflective photomask blank and a reflective photomask that have high hydrogen radical resistance and minimize a shadowing effect to improve transferability. A reflective photomask blank (10) according to the present embodiment includes a substrate (1), a reflective portion (7), and a low reflective portion (8). The low reflective portion (8) includes an absorption layer (4) and an outermost layer (5). The absorption layer (4) includes a total of 50 atomic% or more of one or more selected from a first material group. The outermost layer (5) includes a total of 80 atomic% or more of at least one or more selected from a second material group. The first material group includes indium, tin, tellurium, cobalt, nickel, platinum, silver, copper, zinc, bismuth, and oxides, nitrides, and oxynitrides thereof. The second material group includes tantalum, aluminum, ruthenium, molybdenum, zirconium, titanium, zinc, vanadium, and oxides, nitrides, oxynitrides, and indium oxides thereof.
The present invention is intended to provide a reflective photomask blank and a reflective photomask that suppress or reduce a shadowing effect of a reflective photomask for pattern transfer using light with a wavelength in an extreme ultraviolet region as a light source and that have hydrogen radical resistance. A reflective photomask blank (10) according to an embodiment of the present invention is a reflective photomask blank for producing a reflective photomask for pattern transfer using extreme ultraviolet light as a light source, and includes a substrate (1), a reflective layer (2) including a multi-layer film formed on the substrate (1), and an absorption layer (4) formed on the reflective layer (2). The absorption layer (4) is formed of a material containing a total of 50 atomic % or more of indium (In) and oxygen (O). An atomic number ratio (O/In) of oxygen (O) to indium (In) in the absorption layer (4) exceeds 1.5, and a film thickness of the absorption layer (4) is in a range of from 17 nm to 45 nm.
There are provided a reflective mask blank, a reflective mask, a reflective mask manufacturing method, and a reflective mask correction technique capable of reducing time required for electron beam correction etching, even when a material used for a thin absorption film has a large extinction coefficient k to an EUV light. A reflective photomask blank (10) according to this embodiment has a substrate (1), a multi-layer reflective film (2), a capping layer (3), and a low reflective portion (5), in which the low reflective portion (5) is obtained by alternately depositing an absorption film (A) and an absorption film (B), the correction etching rate in the electron beam correction of the absorption film (A) is larger than the correction etching rate in the electron beam correction of the absorption film (B), and the absorption film (B) contains one or more elements selected from tin, indium, platinum, nickel, tellurium, silver, and cobalt.
A mask blank has a structure where a thin film for pattern formation and a hard mask film are stacked in this order on a transparent substrate, featured in that the thin film is formed of a material containing chromium, the hard mask film includes a stacked structure of a lower layer and an upper layer, the lower layer is formed of a material containing silicon and oxygen, the upper layer is formed of a material containing tantalum and oxygen with an oxygen content of 30 atom % or more, and the ratio of a thickness of the upper layer relative to a total thickness of the hard mask film is 0.7 or less.
There are provided a reflective mask having a coating film uniformly formed along the outermost surface and the side surfaces of a transfer pattern, having high EUV transmittance, and having high cleaning resistance and a production method therefor. To achieve the object, for example, a reflective mask (100) includes: a substrate (1); a multilayer reflective film (2) formed on the substrate (1) and reflecting an incident EUV light; an absorption layer (4) formed on at least a part of the multilayer reflective film (2) and absorbing the incident EUV light; and a coating film (5) formed on the multilayer reflective film (2) and on the absorption layer (4) and transmitting the incident EUV light, in which the coating film (5) has an extinction coefficient k of 0.04 or less to the EUV light, is resistant to cleaning with a cleaning chemical solution, and is formed with a uniform film thickness on the surface and the side surfaces of the absorption layer (4).
To provide a reflective photomask blank and a reflective photomask that suppress or reduce a shadowing effect of a reflective photomask for patterning transfer using a light having a wavelength in the extreme ultraviolet region as a light source and have resistance to hydrogen radicals. A reflective photomask blank (10) according to this embodiment is a reflective photomask blank used for manufacturing a reflective photomask for pattern transfer using an extreme ultraviolet light as a light source, and the reflective photomask blank has: a substrate (1); a reflective layer (2) containing a multi-layer film formed on the substrate (1); and an absorption layer (4) formed on the reflective layer (2), in which the absorption layer (4) is formed of a material containing tin (Sn) and oxygen (O) in the proportion of 50 at % or more in total, the atomic number ratio (O/Sn) of oxygen (O) to tin (Sn) in the absorption layer (4) exceeds 2.0, and the film thickness of the absorption layer (4) is within the range of 17 nm or more and 45 nm or less.
