H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/83 - Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
The purpose of the present disclosure is to provide a solar battery module, a solar battery cell, and a method for manufacturing a solar battery module, all of which are for suppressing an increase in electric resistance. The present disclosure relates to a solar battery module comprising: a first solar battery cell that has at least a conductive corrosion prevention layer, a first conductive substrate, a first power generation element layer, and a first electrode in the stated order; and a second solar battery cell that has at least a second conductive substrate, a second power generation element layer, and a second electrode in the stated order. The conductive corrosion prevention layer of the first solar battery cell and the second electrode of the second solar battery cell are joined via at least a conductive adhesive member.
In order to provide a solar cell module that can be applied to a wide range of three-dimensional curved surfaces, that makes it possible reduce costs, and that makes it possible to improve yield, a solar cell module (100, 101, 102) according to the present disclosure comprises: a sheet member (2); a cell group (1) which is provided in a flat manner on or in the sheet member (2), and in which a plurality of solar cells (10) are connected; and a collector electrode (E) which is connected to the cell group (1). A plurality of cutout parts (K0, K1, K2, K3) that are open at an outer peripheral part of the sheet member (2) are formed in the sheet member (2), in the periphery of the cell group (1).
To attain sufficient reductions in manufacturing and material costs while eliminating reductions in power-generating area and the concentration of current in a bypass diode, and to also respond sufficiently to the diversification and generalization of device structures and applications, a solar cell module (1) according to the present disclosure comprises: a plurality of solar cells (10) having a power-generating element layer (12) on a first conductive substrate; and one or more bypass diodes (50) having a diode element layer (52) on a second conductive substrate. Each power-generating element layer (12) in the solar cells (10) is disposed on one side of the first conductive substrate, while each diode element layer (52) in the bypass diodes (50) is disposed on the other side of the first conductive substrate. A set of parallel circuits is formed by connecting the bypass diodes (50) in parallel with a set of strings formed by the plurality of solar cells (10) being connected in series.
H10F 19/75 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
H10F 10/17 - Photovoltaic cells having only PIN junction potential barriers
H10F 19/30 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising thin-film photovoltaic cells
5.
METHOD FOR MANUFACTURING SOLAR CELL, AND SOLAR CELL
The present invention addresses the problem of providing a method for manufacturing a high-productivity solar cell with which high performance is achieved in a solar cell. The aforementioned problem can be solved by a method for manufacturing a solar cell, the method comprising: a precursor formation step for forming a precursor having an InGaSe layer, a CuSe layer, and an InSe layer; and a crystallization step for heating the precursor to obtain a crystallized light absorption layer.
H10F 10/167 - Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
H10F 10/16 - Photovoltaic cells having only PN heterojunction potential barriers
H10F 10/161 - Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 39/15 - Organic photovoltaic [PV] modulesArrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
Provided is a power device that has high energy utilization efficiency without requiring a control circuit for controlling power. Provided is a power device 100 comprising a solar cell layer PV that includes at least one solar cell, and a storage battery layer BT that is provided to the surface of the solar cell layer on the side opposite from a light-receiving surface of the solar cell layer and includes at least one storage battery, wherein an electroconductive substrate 201 serving as a common electrode between the solar cell layer PV and the storage battery layer BT is provided between the solar cell layer PV and the storage battery layer BT, and a voltage ratio, which is the ratio of the nominal voltage of the storage battery layer BT to the open voltage of the solar cell layer PV, is 0.58-0.84.
H10F 10/00 - Individual photovoltaic cells, e.g. solar cells
H10F 10/172 - Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/57 - Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
H10K 39/15 - Organic photovoltaic [PV] modulesArrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
7.
METHOD FOR MANUFACTURING SOLAR CELL AND SOLAR CELL
Provided are a method for manufacturing a solar cell (100) and a solar cell (100) that combine high performance with high productivity. The present disclosure relates to a method for manufacturing a solar cell (100), the method including a step for forming an electron transport layer (104) on a substrate including a light absorption layer (103) by depositing an n-type oxide semiconductor (104) by sputtering while supplying a gas containing an oxygen source and a hydrogen source.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
The purpose of the present invention is to provide a solar cell having high heat resistance and low production costs, and to provide a manufacturing method for the solar cell. The present invention pertains to a solar cell (100) comprising at least, in order: a first electrode layer (101); a light absorption layer (103); a first electron transport layer (104) which is an n-type semiconductor containing indium sulfide or indium sulfide to which another element has been added; a second electron transport layer (105) which is an n-type oxide semiconductor to which hydrogen has been added; and a second electrode layer (106).
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
9.
THIN FILM SOLAR CELL AND METHOD FOR MANUFACTURING THIN FILM SOLAR CELL
The present invention provides: a thin film solar cell which is capable of repairing damage caused by radiation; and a method for manufacturing a thin film solar cell. A p-type light absorption layer (103) of this thin film solar cell (100) has a first region (R1) and a second region (R2), which are obtained by dividing the p-type light absorption layer (103) into two equal parts. The p-type light absorption layer (103) contains Cu as a group I element, and contains Ga and In as group III elements. The average value of the ratio C1 between the number of atoms of Cu and the number of atoms of the group III elements in the first region (R1) is lower than the average value of the ratio C1 in the second region (R2). The average value of the ratio G1 between the number of atoms of Ga and the number of atoms of the group III element in the first region (R1) is lower than the average value of the ratio G1 in the second region (R2), and the average value of the ratio G1 in the p-type light absorption layer (103) is 0.2 to 0.4 inclusive. The absolute value of the rate of change of the ratio G1 from the first electrode layer (102) side to the second electrode layer (105) side becomes the largest in the first region (R1), and the ratio G1 in the p-type light absorption layer (103) is on a downward trend from the first electrode layer (102) side to the second electrode layer (105) side in the first region (R1).
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
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