Power switch device includes a wide-bandgap semiconductor switch, and a gate driver. The gate driver includes a driver circuit and a diagnostic circuit. The driver circuit is configured to provide a driver signal to control the wide-bandgap semiconductor switch. The diagnostic circuit is configured to sense an electrical characteristic of the wide-bandgap semiconductor switch, and perform a diagnostic test for the wide-bandgap semiconductor switch in response to the electrical characteristic of the wide-bandgap semiconductor switch.
H02H 3/04 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection Details with warning or supervision in addition to disconnection, e.g. for indicating that protective apparatus has functioned
G01R 31/26 - Testing of individual semiconductor devices
H02H 7/20 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
2.
SEMICONDUCTOR DEVICE WITH GROUP III-V COMPOUND MATERIAL
A semiconductor device has a substrate, and a heterojunction structure formed by two group III-V compound layers above the substrate. A first gate electrode is deposited above a first group III-V compound layer and a second group III-V compound layer, the first gate electrode is electrically connected to a first gate terminal. A second gate electrode is deposited above the first group III-V compound layer and the second group III-V compound layer, the second gate electrode is electrically connected to a second gate terminal. A source electrode is deposited above the heterojunction structure, the source electrode is electrically connected to a source terminal. A first drain electrode deposited above the heterojunction structure, the first drain electrode is electrically connected to a drain terminal. A second drain electrode deposited above the heterojunction structure, the second drain electrode is electrically connected to the first gate terminal.
H01L 27/095 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
3.
SWITCHING CIRCUIT WITH A TRANSISTOR HAVING MULTIPLE PULL DOWN PATHS
A switching circuit has a first die and a second die. The first die has a first transistor, a second transistor, and a third transistor. The second die has a fourth transistor and a driving circuit. The second transistor and the third transistor are coupled to the first transistor to provide multiple pull down paths for the first transistor. The driving circuit provides a first driving signal to control the first transistor, a second driving signal to control the fourth transistor, a first pull down control signal to control the second transistor, and a second pull down control signal to control the third transistor based on the pulse width modulation signal. A pull down strength of the first transistor is modified via the second transistor and the third transistor based on an expected turn-off mode of the first transistor.
An integrated circuit includes a switching control pin, a first power unit, a second power unit, and a driving control circuit. The switching control pin is configured to receive a control signal. The first power unit has at least one power switch. The second power unit has at least one power switch. The driving control circuit is configured to provide a first driving signal to the first power unit in response to the control signal, and to provide a second driving signal to the second power unit in response to the control signal. The first power unit is turned on to perform a switching operation and the second power unit is turned off under a first load condition, and both the first power unit and the second power unit are turned on to perform a switching operation under a second load condition.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
A power module, having a bottom substrate, a device substrate arranged on the bottom substrate and an inductor assembly arranged on the device substrate. The device substrate having a first power device chip and a second power device chip embedded within the device substrate. Each power device chip has a first surface and a second surface. The first surface of each power device chip is covered by a top heat layer, and the second surface of each power device chip has a plurality of pins or pads exposed on the second surface of the device substrate, and connected to the bottom substrate.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01F 27/06 - Mounting, supporting, or suspending transformers, reactors, or choke coils
A power module having a bottom substrate, a device substrate arranged on the bottom substrate and an inductor assembly arranged on the device substrate. The inductor assembly has a first winding, a second winding, a first magnetic core part and a second magnetic core part. The first magnetic core part has a first portion disposed on a first horizontal level and a second portion disposed on a second horizontal level. The second magnetic core part has a first portion disposed on the second horizontal level and a second portion disposed on the first horizontal level. The first and second magnetic core parts are assembled to accommodate the first winding between the first portions of the first and second magnetic core part, and to accommodate the second winding between the second portions of the first and second magnetic core part.
A power module has an inductor assembly and a device substrate. The inductor assembly comprises a magnetic core, a first winding and a second winding. Each of the first winding and the second winding has a first end and a second end exposed at the second surface of the inductor assembly. The device substrate has a first power device chip and a second power device chip at least partially embedded within the device substrate. The device substrate further has a first top heat layer at least partially covering the first power device chip and a second top heat layer at least partially covering the second power device chip. The first end of the first winding is electrically connected to the first top heat layer, and the first end of the second winding is electrically connected to the second top heat layer.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A driving circuit is provided. The driving circuit includes a first switch, a second switch, a temperature sensing circuit, and a control circuit. The first terminal of the first switch is configured to receive an input voltage. The first terminal of the second switch is coupled to the second terminal of the first switch, and the second terminal of the second switch is coupled to a ground. The temperature sensing circuit is configured to sense a temperature indicating signal. The control circuit is configured to receive a PWM control signal and the temperature indicating signal and provide an adjusted PWM control signal according to the PWM control signal and the temperature indicating signal. An on-time of the adjusted PWM control signal is different from an on-time of the PWM control signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H03K 17/08 - Modifications for protecting switching circuit against overcurrent or overvoltage
H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
A power module, having: a transformer pack; a top substrate mounted on the transformer pack; and two power device chips mounted on the top substrate, wherein each one of the power device chips has at least one pin connected to the transformer pack via the top substrate; wherein the transformer pack has a magnetic core, a first primary winding and a second primary winding, a first secondary winding and a second secondary winding, a first magnetic core part and a second magnetic core part, and wherein each one of the primary windings passes through the magnetic core, the first secondary winding is close to the first primary winding with the first magnetic core part in between, and the second secondary winding is close to the second primary winding with the second magnetic core part in between.
H01F 27/245 - Magnetic cores made from sheets, e.g. grain-oriented
H02M 5/12 - Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using transformers for conversion of voltage or current amplitude only
10.
POWER MODULE WITH INDUCTORS AND CAPACITORS THAT ARE EMBEDDED WITHIN A SUBSTRATE LAYER
A power module includes a substrate and an integrated circuit (IC) die. The IC die is disposed on the substrate. A driver and a pair of switches are integrated in the IC die. A power converter of the power module includes the driver, the pair of switches, an inductor, and a capacitor. The inductor and the capacitor are embedded within the substrate.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
A linear regulator includes a pass element, an error amplifier, and a miller compensation circuit. The error amplifier is configured to provide an error signal to the control terminal of the pass element in response to a reference voltage and a feedback voltage. The error amplifier includes a current mirror stage and a first stage. The current mirror stage is configured to receive the input voltage. The first stage is configured to provide a first current signal to a first terminal of the current mirror stage in response to the reference voltage, and provide a second current signal to a second terminal of the current mirror stage in response to the feedback voltage. The miller compensation circuit is coupled between the second terminal of the pass element and the error amplifier. The miller compensation circuit is configured to control the first current signal.
G05F 1/575 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
G05F 1/565 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
A power management integrated circuit (PMIC) chip for providing power loss protection to an application device. The PMIC chip may be adapted to co-work with a plurality sets of storage capacitors that are charged using power from a power source during normal operation. An application device receives power from the power source during normal operation and receives power from an operational set of storage capacitors during power loss. A failing set of storage capacitors is disconnected from an operational set of storage capacitors and from the PMIC chip. The operational set of storage capacitors remains connected to the PMIC chip to provide power loss protection.
H02J 9/06 - Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over
13.
INTERCONNECTION STRUCTURE FOR INTEGRATED CIRCUIT PACKAGE
An interconnection structure for IC package onto the external device is discussed. The IC package has a voltage regulator contained therein; and the external device has a load assembled thereupon. A plurality of connection devices with elasticity are attached to the IC package, so that when a perpendicular force is applied to the connection devices, the IC package is electrically coupled to the external device to provide power supply to the load with ease replacement.
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
H01L 23/00 - Details of semiconductor or other solid state devices
09 - Scientific and electric apparatus and instruments
Goods & Services
Integrated circuits; electronic integrated circuits; integrated semiconductor circuits; Semiconductors; Chips; Electronic Chips; Printed Circuits; sensor-embedded integrated circuits; Multiplexers; routers; transceivers; radio transceivers; audio/visual receivers; optical transmitters; radio frequency transmitters; Transmitters of electronic signals; Transmitters; telecommunication transmitters; Transponders; Network Communication Equipment; Light emitting diode drivers; White light emitting diode drivers; Organic light emitting diode drivers; Audio amplifiers; preamplifiers; Light dimmer; Luminescent screen; Self-starter switches; igniting apparatus, electric, for igniting at a distance; electric apparatus for remote ignition; Telecommunication switches; change-over switches; computer switches; electric switches; electrical switches; computer network switches; electronic transistors; triodes; electric current switches; power switches; semi-conductor devices; frequency stabilizers; magnetic materials and devices, namely, integrated circuit modules and magnetic inductors for electricity; magnetic cores; electromagnets; servo amplifiers; diodes; power amplifiers; electrical amplifiers; photodiodes; electric diodes; transistors; signal processors; digital signal processors; Data processing apparatus; (CPU) Central processing units; Converters; AC/DC converters; battery chargers; DC-DC converters; DC/AC inverters; Solar inverters; automotive traction inverters; Signal Converters; Electric converters; digital to analogue converters; level converters; current converters; electric power converters; analogue to digital converters; electricity converters; regulating apparatus, electric; current rectifiers; voltage stabilizers; voltage regulator; stabilized voltage power supply; low voltage power supply; voltage regulators for electric power; inverters for power supply; induction voltage regulators; induction voltage regulators; voltage regulators; fly-back transformers; voltage monitor modules; electric current control devices; rectifier modules; wireless battery chargers; mobile phone chargers; smartphone battery chargers; charging appliances for rechargeable equipment; electronic cigarette chargers; battery chargers for mobile phones; wireless chargers; battery charge devices; automotive on-board charger; Integrated circuits for the conversion and management of power used in electrical circuits; integrated circuit for the conversion and supply of power to server, datacenter, cloud computing devices, computing equipment, and communication equipment; integrated circuit cards; integrated circuit cards, namely, smart cards; integrated circuit modules; electronic circuit boards; logic circuits; large scale integrated circuits; microchips; circuit boards; electronic circuits; electronic chips for the manufacture of integrated circuits; circuit boards provided with integrated circuits; electric control panels; power controllers; phase modifiers; frequency converters; Electric sensors; optical sensors; Sensor; Mutual Transducer; Position Sensor used for motor positioning and motor control; Electrical controllers; integrated circuit control boards for motors; electronic controls for motors; electronic controllers for servo motors; electronic power supplies for driving electric motors; uninterruptible electrical power supplies; servo-motors and drivers; brushless DC motors; brushless DC motor drivers; amplifiers for servo motors; controllers for servo motors; electronic speed controllers; communication interface units; interfaces for computers; audio interfaces; connectors; junction boxes; connectors for electronic circuits; micro control units with embedded software interface; microcontrollers; microprocessors; automobile electronic control units; downloadable computer software for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; computer software, recorded; computer software applications, downloadable; computer software platforms, recorded or downloadable; test kits and design tool kits comprised of software communication interface, controllers, boards being integrated circuit cards, namely, evaluation boards and demonstration boards, and computer software for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; test kits, design kits and tool kits comprised of software communication interface, controllers, and computer software for configuration and design of integrated circuits; test instrument; semiconductor testing apparatus; test adapters for testing printed circuit boards; testing apparatus for testing printed circuit boards.
15.
COMPOSITE SWITCH CIRCUIT WITH REDUCED POWER LOSS AND THE FORMING METHOD THEREOF
A composite switch circuit having a normally-on power switch device and a normally-off power switch device in cascode configuration is discussed. The composite switch circuit is with reduced power loss by biasing a common connection of the source terminal of the normally-on power switch device and the drain terminal of the normally-off power switch device with a low voltage supply during a reverse recovery process of the composite switch circuit.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
16.
CONTROL CIRCUIT AND VOLTAGE REGULATING UNIT FOR SWITCHING POWER CONVERTER
A control circuit for a switching power converter is disclosed herein. The control circuit includes a power input terminal, a switching step-down regulator module, and a low dropout linear regulator module. The power input terminal is configured to receive an input signal. The switching step-down regulator module has a step-down regulating input terminal and a step-down output terminal. The step-down regulating input terminal is coupled to the power input terminal, and the switching step-down regulator module is configured to provide a step-down output voltage at the step-down output terminal. The low dropout linear regulator module is coupled to the power input terminal and the step-down output terminal, and is configured to be powered by the power input terminal in a first operation period and be powered by the step-down output voltage in a second operation period.
H02M 1/36 - Means for starting or stopping converters
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A power module includes a first power module and a second power module arranged below the first power module. The first power module includes at least one input pad configured to receive an input voltage and at least one power pad configured to provide an intermediate voltage. The at least one input pad is mounted on a top surface of the first power module, and the at least one power pad is mounted on a bottom surface of the first power module. The second power module includes at least one signal pad configured to receive the intermediate voltage and at least one output pad configured to provide an output voltage. The at least one signal pad is mounted on a top surface of the second power module, and the at least one output pad is mounted on a bottom surface of the second power module.
A novel converter circuit topology is disclosed. The converter circuit has a bridge circuit, a transformer, and a half-bridge current-doubler rectifier. An input end of the bridge circuit is connected to an input voltage node of the converter circuit. A reference end of the bridge circuit is connected to an output voltage node of the converter circuit. Opposing ends of a primary winding of the transformer are connected to bridge nodes of the bridge circuit. A secondary winding of the transformer serves as current-doubler inductors of the half-bridge current-doubler rectifier. A tap of the secondary winding is connected to the reference end of the bridge circuit.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
19.
SEMICONDUCTOR DEVICE HAVING A TERMINATION REGION WITH DEEP TRENCH ISOLATION
A semiconductor device having a termination region comprising deep trench isolation (“DTI”). The termination region may be formed in a semiconductor layer of a first conductivity type and may include a vertical path cell of a second conductivity type vertically extended into the semiconductor layer with a vertical path cell depth, a first type deep trench termination cell (“DTTC”) disposed laterally immediately next to the vertical path cell and including a first DTI and a first well region of the second conductivity type disposed laterally immediately next to the first DTI, and a second type DTTC having a second DTI disposed laterally immediately next to the first type DTTC, and a second well region of the first conductivity type disposed laterally immediately next to the second DTI.
A controller for a multiphase switching converter has a feedback pin, a reference pin, and a plurality of switching control pins. When the controller is a master controller, the reference pin provides a reference output signal based on a plurality of currents flowing through a plurality of switching circuits. When the controller is a slave controller, the feedback pin receives the reference output signal from the master controller, and the slave controller provides the plurality of switching control signals based on the plurality of currents flowing through the plurality of switching circuits, the reference output signal, and a feedback signal representative of an output voltage of the multiphase switching converter.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/084 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters using a control circuit common to several phases of a multi-phase system
21.
FAST AND DYNAMIC VOUT-TRACKING CONTROL FOR AUDIO INPUT SIGNAL
A switch circuit includes a first audio input pin configured to receive a first audio signal having a first amplitude, a second audio input pin configured to receive a second audio signal having a second amplitude, an input pin, an output pin, and at least one switch configured to convert the input voltage to the output voltage. When a maximum of the first amplitude and the second amplitude is lower than a first threshold voltage, the output voltage is a default voltage. When the maximum of the first amplitude and the second amplitude is greater than the first threshold voltage but lower a second threshold voltage that is greater than the first threshold voltage, the output voltage is a first voltage greater. When the maximum of the first amplitude and the second amplitude is larger than the second threshold voltage, the output voltage is a second voltage.
H03K 17/56 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices
22.
DRIVING CIRCUIT HAVING A NEGATIVE VOLTAGE ISOLATION CIRCUIT
A driving circuit for a power transistor. The driving circuit has a control pin to receive a control signal, a driving pin to provide a driving signal to control the power transistor, the driving signal is generated based on the control signal. The driving circuit also has a negative voltage isolation circuit connected between an isolation pin and an output pin, when the voltage at the output pin is greater than an isolation voltage, the voltage at the isolation pin is equal to the voltage at the output pin, and when the voltage at the output pin is less than the isolation voltage, the voltage at the isolation pin is clamped at a preset voltage value, the preset voltage value is in a range from −2V to −0.2V.
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
23.
MULTIPHASE SWITCHING CONVERTER WITH STACKABLE CONTROLLERS
A controller for a multiphase switching converter has a logic circuit, to provide a plurality of switching control signals to control the plurality of switching circuits. When as a master controller, the controller provides a first total current signal based on a sum of a plurality of currents flowing through the plurality of switching circuits. When as a slave controller, the controller receives the first total current signal, provides a second total current signal based on the sum of the plurality of currents flowing through the plurality of switching circuits, and turns on the plurality of switching circuits in sequence based on the first total current signal and the second total current signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/084 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters using a control circuit common to several phases of a multi-phase system
24.
SWITCHING MODE POWER SUPPLY, CONTROL CIRCUIT AND CONTROL METHOD THEREOF
A control circuit for a switching mode power supply is disclosed herein. The switching mode power supply has a primary-side circuit, the primary-side circuit has a first switch, a second switch, and a clamping capacitor. The control circuit includes a voltage detection circuit, an on-time adjustment circuit, and a driving circuit. The voltage detection circuit is coupled to the first terminal of the first switch and configured to detect a voltage signal at the first terminal of the first switch. The on-time adjustment circuit is configured to provide a first on-time signal to adjust an on-time of the first switch according to the voltage signal at the first terminal of the first switch. The driving circuit is configured to provide a driving signal to a control terminal of the first switch according to the first on-time signal.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
A power system with adaptive minimum frequency is disclosed. The power system includes a resonant converter and a control circuit. Under the control of the control circuit, the resonant converter works with an adaptive minimum frequency. The value of the adaptive minimum frequency is preset and is selected by an equivalent resistance or an output voltage of the resonant converter.
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
26.
CONTROLLER AND CONTROLLING METHOD FOR QUASI-RESONANT CONTROLLED SWITCHING CONVERTER
A controller for a quasi-resonant controlled switching converter includes a sample-and-hold circuit for providing a plateau voltage based on a voltage detection signal that represents a voltage across a power switch, a first voltage-dividing circuit for providing a first divided voltage based on the plateau voltage, a timing circuit, a first converting unit, an enable circuit for providing an enable signal corresponding to a target valley number for a valley switching of the power switch, and a logic circuit. The timing circuit starts timing when the voltage detection signal is lowered to the first divided voltage and ends timing when the voltage detection signal is lowered to a zero-crossing threshold voltage. The first converting unit provides a control voltage corresponding to the time duration of the timing circuit. The logic circuit turns on the power switch based on the control voltage and the enable signal.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
An integrated circuit with a fault reporting structure. The fault reporting structure includes a first fault reporting structure formed in at least one metal layer of the integrated circuit and electrically coupled to a first fault reporting pin of the integrated circuit. The first fault reporting structure may be adapted to report whether burnt point forms in the integrated circuit.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
28.
POWER SWITCH DEVICE WITH CASCODE STRUCTURE AND THE FORMING METHOD THEREOF
A power switch device with cascode structure provides better performance with simple design. It has a normally-on device and a normally-off device coupled in series. A resistor is coupled to a control terminal of the normally-on device; and a capacitor is coupled between a control terminal of the normally-off device and the control terminal of the normally-on device.
A power module has a substrate, a magnetic component disposed on the substrate, a plurality of power integrated circuits (ICs), and a heat spreader. The heat spreader and at least a part of the plurality of power ICs are disposed on a top surface of the substrate. The heat spreader is fixed on the substrate through a structural adhesive, covering top surfaces of the part of the plurality of power ICs on the top surface of the substrate, and is in contact with the top surfaces of the part of the plurality of power ICs on the top surface of the substrate through a thermal conductive adhesive. A difference between a height measured from a topmost surface of the magnetic component to the top surface of the substrate and a height measured from a topmost surface of the heat spreader to the top surface of the substrate is within 300 um.
09 - Scientific and electric apparatus and instruments
Goods & Services
Integrated circuits; electronic integrated circuits; integrated semiconductor circuits; Semiconductors; Integrated circuits, namely chips; Electronic Chips; Printed Circuits; sensor-embedded integrated circuits; Electric switches; electrical switches; electronic transistors; transistors; Electrical controllers; power controllers; micro control units; battery chargers; regulating apparatus, electric; current rectifiers; voltage stabilizers; voltage regulator; stabilized voltage power supply; low voltage power supply; voltage regulators for electric power; induction voltage regulators; induction voltage regulators; voltage regulators; flyback transformers; voltage monitor modules; electric current control devices; rectifier modules; wireless battery chargers; mobile phone chargers; smartphone battery chargers; charging appliances for rechargeable equipment; electronic cigarette chargers; battery chargers for mobile phones; wireless chargers; battery charge devices; Integrated circuits for the conversion and management of power used in electrical circuits; integrated circuit cards; integrated circuit cards, namely, smart cards; integrated circuit modules; electronic circuit boards; logic circuits; large scale integrated circuits; microchips; circuit boards; electronic circuits; electronic chips for the manufacture of integrated circuits; circuit boards provided with integrated circuits; electric control panels; Apparatus and instruments for electricity; Signal processing apparatus; Electronic signal processing equipment; Semiconductor devices.
A semiconductor device is disclosed herein. The semiconductor device includes a routing structure. The routing structure has an intermediate conductive routing layer. The intermediate conductive routing layer includes a first mesh conductive layer formed in a predetermined second region of the semiconductor device and a second mesh conductive layer formed in a predetermined first region of the semiconductor device. The first mesh conductive layer and the second mesh conductive layer are electrically isolated from each other. The intermediate conductive routing layer further includes multiple first conductive islands formed in the predetermined first region and multiple second conductive islands formed in the predetermined second region.
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
32.
SEMICONDUCTOR DEVICE WITH TRENCH STRUCTURES AND METHOD FOR MANUFACTURING SAME
A semiconductor device is disclosed herein. The semiconductor device includes a silicon carbide substrate, trench structures, mesa structures, a first oxide layer, a conductive layer, a second oxide layer, a dielectric layer, and an insulation layer. The trench structures are formed on a surface of the silicon carbide substrate. Each trench structure has sidewalls and a bottom, and each respective mesa structure is formed between the respective adjacent trench structures. The first oxide layer is formed on the sidewalls of the trench structures. The conductive layer is formed on the bottom of the trench structures and on a top surface of each mesa structure. The second oxide layer is formed on the first oxide layer and the conductive layer. The dielectric layer is formed on the second oxide layer. The insulation layer is formed on the dielectric layer.
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
33.
Resonant converter with multiple resonant tank circuits
A resonant converter has a primary resonant tank circuit and a secondary resonant tank circuit. An inverter circuit converts an input DC voltage received by the resonant converter at an input voltage node to a pulsating signal that is fed to the primary resonant tank circuit to generate a resonant tank current that flows through a primary winding of a transformer. The resonant tank current induces current in a secondary winding of the transformer. The induced current is rectified by a rectifier and the rectified signal is filtered to generate an output DC voltage at an output voltage node. The secondary resonant tank circuit is disposed between the secondary winding of the transformer and the output voltage node, and a tank node of the secondary resonant tank is connected to the primary resonant tank circuit through the inverter circuit.
H02M 3/00 - Conversion of DC power input into DC power output
H02M 1/12 - Arrangements for reducing harmonics from AC input or output
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
34.
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSISTOR AND ASSOCIATED MANUFACTURING METHOD
A method for manufacturing a semiconductor device includes preparing a substrate of a first conductivity type having a drain region, forming a first source region and a second source region of the first conductivity type in the substrate separated from each other, and forming a gate trench of a gate region disposed closely next to or in adjoining neighbor to the first source region. The method may further include forming a first sidewall body region of a second conductivity type to separate the first source region from the second source region, forming a link region of the second conductivity type such that the link region and the gate trench are disposed spatially opposite to each other, forming a gate insulation layer to coat and line sidewalls and a bottom of the gate trench, and using a gate conductive material to fill the gate trench.
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
35.
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSISTOR AND ASSOCIATED MANUFACTURING METHOD
A method for manufacturing a semiconductor device includes preparing a substrate of a first conductivity type having a drain region, forming a first source region and a second source region of the first conductivity type in the substrate separated from each other, and forming a gate trench of a gate region disposed closely next to or in adjoining neighbor to the first source region. The method may further include forming a first sidewall body region of a second conductivity type to separate the first source region from the second source region, forming a link region of the second conductivity type such that the link region and the gate trench are disposed spatially opposite to each other, forming a gate insulation layer to coat and line sidewalls and a bottom of the gate trench, and using a gate conductive material to fill the gate trench.
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
36.
Multi-phase switching converter under a phase-added operation and control method thereof
This disclosure provides a control method for multi-phase switching converter having a master phase and at least one slave phase. The control method comprises: providing a pulse signal with 0.5 duty cycle by frequency-dividing a master control signal supplied to the master phase; and for each slave phase to be enabled, setting a ratio of a charge current and a discharge current based on a slave phase number under a phase-added operation, charging a first capacitor with the charge current and discharging a second capacitor with the discharge current in high logic of the pulse signal, discharging the first capacitor with the discharge current and charging the second capacitor with the charge current in logic low of the pulse signal, and generating a respective enable signal for controlling a switch in a corresponding slave phase by comparing a first capacitor voltage with a second capacitor voltage.
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
37.
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSISTOR AND ASSOCIATED MANUFACTURING METHOD
A semiconductor device includes a first source region, a first sidewall body region, a gate region, a second source region and a link region formed in a substrate of a first conductivity type. The first source region and the second source region may be of the first conductivity type while the first sidewall body region and the link region may be of a second conductivity type opposite to the first conductivity type. The link region and the gate region are respectively disposed at a first side and a second side of the first source region. The first sidewall body region may be disposed below or underneath the first source region.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
38.
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSISTOR AND ASSOCIATED MANUFACTURING METHOD
A semiconductor device includes a first source region, a first sidewall body region, a gate region, a second source region and a link region formed in a substrate of a first conductivity type. The first source region and the second source region may be of the first conductivity type while the first sidewall body region and the link region may be of a second conductivity type opposite to the first conductivity type. The link region and the gate region are respectively disposed at a first side and a second side of the first source region. The first sidewall body region may be disposed below or underneath the first source region.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
39.
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSISTOR AND ASSOCIATED MANUFACTURING METHOD
A semiconductor device includes a first source region, a first sidewall body region, a gate region, a second source region and a link region formed in a substrate of a first conductivity type. The first source region and the second source region may be of the first conductivity type while the first sidewall body region and the link region may be of a second conductivity type opposite to the first conductivity type. The link region and the gate region are respectively disposed at a first side and a second side of the first source region. The first sidewall body region may be disposed below or underneath the first source region.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
09 - Scientific and electric apparatus and instruments
Goods & Services
Integrated circuits; electronic integrated circuits; integrated semiconductor circuits; Semiconductors; computer chips; Electronic Chips for power switching; Printed Circuits; sensor-embedded integrated circuits; Multiplexers; transceivers; radio transceivers; audio receivers, namely, audio-video receivers; optical transmitters, namely optical communications instruments; radio frequency transmitters; Transmitters of electronic signals; telecommunications transmitters; Transponders; Network Communication Equipment, namely, change-over switches for telecommunications apparatus; Light emitting diode drivers, namely, LED drivers; White light emitting diode drivers; Organic light emitting diode drivers; Audio amplifiers; pre-amplifiers; Light dimmer; Self-starter electrical switches; electric apparatus for remote ignition, namely, electronic controls for the remote ignition of vehicle motors; Telecommunication switches; change-over switches; computer switches; electric switches; electrical switches; computer network switches; electronic transistors; triodes; electric current switches; power switches; semi-conductor devices; frequency stabilizers; magnetic materials and devices, namely, IC modules using magnetic materials; magnetic inductors for electricity; magnetic cores; electromagnets; servo amplifiers, namely, amplifiers for use with servo motors; diodes; power amplifiers; electrical amplifiers, namely, electrical amplifiers for audio signals; photodiodes; electric diodes; transistors; signal processors; digital signal processors; Data processing apparatus; (CPU) Central processing units; electronic converters; AC/DC converters; battery chargers; DC-DC converters; DC/AC inverters; Solar inverters; automotive traction inverters; Signal Converters, namely, digital to analogue converters, level converters, current converters, electric power converters, analogue to digital converters, electricity converters, frequency converters; Electric converters; digital to analogue converters; level converters; current converters; electric power converters; analogue to digital converters; electricity converters; regulating apparatus, electric, for regulating voltage or current; current rectifiers; voltage stabilizers; voltage regulator; stabilized voltage power supply, namely, voltage stabilizing power supplies; low voltage power supplies; voltage regulators for electric power; inverters for power supply; induction voltage regulators; voltage regulators; fly-back transformers; voltage monitor modules; electric current control devices; rectifier modules; wireless battery chargers; mobile phone chargers; smartphone battery chargers; charging appliances for rechargeable equipment; electronic cigarette chargers; battery chargers for mobile phones; wireless chargers; battery charge devices; automotive on-board chargers for portable electronic devices; on-board charger for electric vehicles; Integrated circuits for the conversion and management of power used in electrical circuits; integrated circuit for the conversion and supply of power to server, datacenter, cloud computing devices, computing equipment, and communication equipment; integrated circuit cards; integrated circuit cards, namely, smart cards; integrated circuit modules; electronic circuit boards; logic circuits; large scale integrated circuits; microchips; circuit boards; electronic circuits; electronic chips for the manufacture of integrated circuits; circuit boards provided with integrated circuits; electric control panels; power controllers; phase modifiers; frequency converters; Electric sensors; optical sensors; Sensor, namely, position sensors, angular position sensors, current sensors; Mutual Transducer, namely, mutual electrical transducers; Position Sensor used for motor positioning and motor control; Electrical controllers; integrated circuit control boards for motors; electronic controls for motors; electronic controllers for servo motors; electronic power supplies for driving electric motors; uninterruptible electrical power supplies; servo-motors and drivers; electric motors for machines, namely, brushless DC motors; electric motor drivers for machines, namely, brushless DC motor drivers; amplifiers for servo motors; electronic speed controllers; communication interface units in the nature of computer network interface devices, electronic display interfaces, data communication interface, and audio interfaces; interfaces for computers; audio interfaces; electrical connectors; junction boxes; connectors for electronic circuits; microcontrollers; microprocessors; downloadable computer software for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; recorded computer application software for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; downloadable computer software applications for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; recorded and downloadable computer software platforms for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; test kits and design tool kits for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers, comprised of software communication interface, controllers, boards being integrated circuit cards, namely, evaluation boards and demonstration boards, and computer software for the configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; test kits, design kits and tool kits for configuration and design of integrated circuits comprised of software communication interface, controllers, and computer software for the configuration and design of integrated circuits; test instrument, namely, test apparatus for integrated circuits, integrated circuit modules, and printed circuit boards or demonstration boards; semiconductor testing apparatus; test adapters for testing printed circuit boards; testing apparatus for testing printed circuit boards
41.
POWER CIRCUIT, DRIVING CIRCUIT AND METHOD FOR PROVIDING DRIVING VOLTAGE
A power circuit includes a first switch, a second switch, and a driving circuit. A first terminal of the first switch is configured to receive an input voltage. A first terminal of the second switch is coupled to a second terminal of the first switch, and a second terminal of the second switch is configured to be coupled to a ground. The driving circuit receives a PWM control signal, and provides a first driving signal to a control terminal of the first switch and a second driving signal to a control terminal of the second switch based on the PWM control signal. The driving circuit determines whether the PWM signal is at a high impedance logic level. When the PWM signal is at the high impedance logic level, the driving circuit regulates a voltage of the second driving signal such that the second driving switch operate in linear region.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
42.
Resonant converter with multiple resonant tank circuits
A resonant converter has a primary resonant tank circuit and a secondary resonant tank circuit. An inverter circuit converts an input DC voltage received by the resonant converter at an input voltage node to a pulsating signal that is fed to the primary resonant tank circuit to generate a resonant tank current that flows through a primary winding of a transformer. The resonant tank current induces current in a secondary winding of the transformer. The induced current is rectified by a rectifier and the rectified signal is filtered by an output capacitor to generate an output DC voltage at an output voltage node. The secondary resonant tank circuit is disposed between the input voltage node and the output voltage node to inject odd order harmonics of the operating frequency to the primary tank circuit to shape the resonant tank current.
H02M 3/00 - Conversion of DC power input into DC power output
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/12 - Arrangements for reducing harmonics from AC input or output
43.
MULTI-PHASE VOLTAGE CONVERTER WITH INDIVIDUAL PHASE TEMPERATURE REPORTING
A multi-phase voltage converter has a plurality of integrated circuits (ICs), and a controller. Each IC has a temperature report pin and a temperature sensing circuit, the controller has a temperature input pin connected to the temperature report pin of each of the plurality of ICs. The controller provides an acquiring command via the temperature input pin to all of the ICs. The acquiring command is capable of selecting one of the plurality of ICs to report an individual temperature.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/32 - Means for protecting converters other than by automatic disconnection
A power supply module comprises an inductor pack, a top PCB (Printed Circuit Board) on top of the inductor pack, a bottom PCB disposed below the inductor pack, a connector connected between the bottom PCB and the top PCB, two power device chips on top of the top PCB, an output capacitor substrate layer disposed below the bottom PCB, and an interposer substrate layer disposed below the output capacitor substrate layer. The inductor pack comprises two inductors, each inductor having a first end and a second end. The two power device chips are respectively connected to the first ends of the two inductors via the top PCB. A first output capacitor and a second output capacitor are embedded within the output capacitor substrate layer, and are respectively connected to the second ends of the two inductors to provide a first output voltage and a second output voltage.
H02M 3/00 - Conversion of DC power input into DC power output
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
45.
LED DRIVING CIRCUIT AND METHOD FOR CONTROLLING A CURRENT DISTRIBUTION TO AN LED STRING
LED driving circuit includes a first current source, a second current source, a current sensing circuit, and a control circuit. The first current source, coupled in series with a heat dissipation resistor, provides a first current path to the LED string. The second current source, coupled in parallel with the serially coupled first current source and the heat dissipation resistor, provides a second current path to the LED string. The current sensing circuit is configured to sense a current sense signal representing a current flowing through the LED string. The control circuit is configured to control a current distribution of the first current path and a second current path in response to the current sense signal. When the current sense signal is greater than a threshold, a current flowing through the first current path is larger than a current flowing through the second current path.
A multiphase converter provides an output voltage to a load. The multiphase converter receives a load event signal from the load and turns ON at a same time the phases of the multiphase converter to increase the output voltage in response to the load event signal indicating that a load current drawn by the load from the multiphase converter is about to increase. The multiphase converter increases an impedance of low-side switches of the multiphase converter in response to the load event signal indicating that the load current is about to decrease.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A multi-phase voltage converter has a plurality of integrated circuits (ICs), and a controller. Each IC has a power switch, a monitoring pin and a current sense pin. The power switch is controlled to convert an input voltage to an output voltage. The current sense pin is capable of providing a current sense signal representative of a current flowing through the power switch. The controller is capable of providing a clock signal via the monitoring pin, and provides a plurality of data signals via the current sense pin of the plurality of ICs. Each of the plurality of ICs is assigned an identification code based on the clock signal and one of the plurality of data signals.
H02M 1/084 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters using a control circuit common to several phases of a multi-phase system
09 - Scientific and electric apparatus and instruments
Goods & Services
Integrated circuits; electronic integrated circuits; integrated semiconductor circuits; Semiconductors; Integrated circuits, namely, chips; Electronic Chips; Printed Circuits; sensor-embedded integrated circuits; Electric switches; electrical switches; electronic transistors; transistors; Electrical controllers; power controllers; micro control units; battery chargers; regulating apparatus, electric; current rectifiers; voltage stabilizers; voltage regulator; stabilized voltage power supply; low voltage power supply; voltage regulators for electric power; induction voltage regulators; voltage regulators; flyback transformers; voltage monitor modules; electric current control devices; rectifier modules; wireless battery chargers; mobile phone chargers; smartphone battery chargers; charging appliances for rechargeable equipment; electronic cigarette chargers; battery chargers for mobile phones; wireless chargers; battery charge devices; Integrated circuits for the conversion and management of power used in electrical circuits; integrated circuit cards; integrated circuit cards, namely, smart cards; integrated circuit modules; electronic circuit boards; logic circuits; large scale integrated circuits; microchips; circuit boards; electronic circuits; electronic chips for the manufacture of integrated circuits; circuit boards provided with integrated circuits; electric control panels
49.
Power loss prevention circuit with mitigation for failed energy storage banks
A power management integrated circuit (PMIC) chip provides power loss protection to an application device. The PMIC chip has several storage pins that each receives a set of storage capacitors that are charged using power from a power source during normal operation. An application device receives power from the power source during normal operation and receives power from an operational set of storage capacitors during power loss. A failing set of storage capacitors is disconnected from an operational set of storage capacitors and from the PMIC chip. The operational set of storage capacitors remains connected to the PMIC chip to provide power loss protection.
A power circuit includes a first power switch and a control unit. The control circuit is configured to provide a first driving signal to a control terminal of the first power switch, and the first power switch is turned on and off in response to the first driving signal. The power circuit further includes an input pin configured to receive an input voltage signal, an output pin configured to provide an output voltage signal, at least one control pin configured to receive at least one control signal, and a first safety pin coupled to the control terminal of the first power switch. The first safety pin is configured to receive a first safety signal, and the first power switch is controlled in response to the first safety signal.
H02P 29/02 - Providing protection against overload without automatic interruption of supply
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
B60R 16/023 - Electric or fluid circuits specially adapted for vehicles and not otherwise provided forArrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric for transmission of signals between vehicle parts or subsystems
51.
Trans-inductor voltage regulators with fault detection and the fault detection method thereof
A trans-inductor voltage regulator with fault detection has a plurality of transformers. Each transformer of the plurality of the transformers has a primary winding coupled to a switching circuit, and a secondary winding. Each secondary winding of each transformer of the plurality of transformers are coupled in series with a compensation inductor. The trans-inductor further has a controller operable to detect a) a short condition in a secondary side of each transformer of the plurality of transformers, b) a short condition between a primary side and the secondary side of each transformer of the plurality of transformers; c) an open condition in the primary side of each transformer of the plurality of transformers; and d) an open condition in the secondary side of each transformer of the plurality of transformers.
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
52.
Controller for driving a power switch in slave phase of a multiphase power converter and power converter comprising the same
A power converter includes a controller for driving a corresponding power switch in the power converter. The controller may have a current sense terminal adapted to sense/receive a current sense signal indicative of a current flowing through the corresponding power switch and a current limit terminal adapted to receive a reference current sense signal indicative of a current flowing through another power switch in the power converter. The controller may turn off the corresponding power switch once the current sense signal reaches a peak value of the reference current sense signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H02M 7/06 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
A power module has a substrate with a bottom side and a component side. Power converters of the power module are implemented using monolithic integrated circuit (IC) switch blocks that are mounted on the component side of the substrate. The power converters include output inductors that are disposed within the substrate. An end of an output inductor is connected to a switch node of a monolithic IC switch block and another end of the output inductor is connected to an output voltage node of the power module.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
54.
Power module with output inductors and output capacitors that are embedded within substrate layers
A power module has a printed circuit board (PCB) having an output inductor substrate layer and an output capacitor substrate layer. Power converters of the power module are implemented using monolithic integrated circuit (IC) switch blocks that are mounted on a surface of the power module. Output voltages of the power converters are provided at output voltage nodes. The power converters include output inductors that are embedded within the output inductor substrate layer and output capacitors that are embedded within the output capacitor substrate layer. Embedded output inductors and capacitors are connected to corresponding output voltage nodes.
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
55.
Gate driver with improved switching performance and the driving method thereof
A gate driver is configured to drive a normally-on device and a normally-off device coupled in series. The gate driver controls the normally-on device in response to a PWM signal, and to control a normally-off device to maintain ON in normal operations. If an under voltage condition of a negative power supply of a first driver used to drive the normally-on device, or a positive power supply of a second driver used to drive the normally-off device, or an input supply voltage is detected, the normally-off device is controlled to be OFF.
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
56.
Switch control circuit and power converter comprising the same
A power converter includes a switch control circuit for driving a high side switch of the power converter comprising the high side switch and a low side switch connected in series. The switch control circuit may have a first terminal for receiving a low side switch driving signal of the low side switch, a second terminal used as a reference ground terminal of the switch control circuit, and a third terminal used as an output terminal to provide a high side switch driving signal, the switch control circuit can draw power from the low side switch driving signal and may not require internal regulators that should sustain high voltage.
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
57.
MULTI-LEVEL BUCK CONVERTER AND ASSOCIATE CONTROL CIRCUIT THEREOF
A control circuit for controlling a multi-level buck converter having N pairs of switches serially connected between an input terminal and a logic ground, wherein N is an integer equal to or greater than 2. The control circuit has a comparing circuit, a selecting circuit and a delay circuit. The comparing circuit compares a voltage feedback signal indicative of an output voltage signal of the multi-level buck converter with a reference signal to generate a comparing signal. The selecting circuit generates N set signals based on the comparing signal. The delay circuit delays the N set signals to provide N delay set signals to control the N pairs of switches when the output voltage signal falls in
A control circuit for controlling a multi-level buck converter having N pairs of switches serially connected between an input terminal and a logic ground, wherein N is an integer equal to or greater than 2. The control circuit has a comparing circuit, a selecting circuit and a delay circuit. The comparing circuit compares a voltage feedback signal indicative of an output voltage signal of the multi-level buck converter with a reference signal to generate a comparing signal. The selecting circuit generates N set signals based on the comparing signal. The delay circuit delays the N set signals to provide N delay set signals to control the N pairs of switches when the output voltage signal falls in
(
1
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N
A control circuit for controlling a multi-level buck converter having N pairs of switches serially connected between an input terminal and a logic ground, wherein N is an integer equal to or greater than 2. The control circuit has a comparing circuit, a selecting circuit and a delay circuit. The comparing circuit compares a voltage feedback signal indicative of an output voltage signal of the multi-level buck converter with a reference signal to generate a comparing signal. The selecting circuit generates N set signals based on the comparing signal. The delay circuit delays the N set signals to provide N delay set signals to control the N pairs of switches when the output voltage signal falls in
(
1
±
k
%
)
⨯
1
N
of an input voltage signal of the multi-level buck converter,
A control circuit for controlling a multi-level buck converter having N pairs of switches serially connected between an input terminal and a logic ground, wherein N is an integer equal to or greater than 2. The control circuit has a comparing circuit, a selecting circuit and a delay circuit. The comparing circuit compares a voltage feedback signal indicative of an output voltage signal of the multi-level buck converter with a reference signal to generate a comparing signal. The selecting circuit generates N set signals based on the comparing signal. The delay circuit delays the N set signals to provide N delay set signals to control the N pairs of switches when the output voltage signal falls in
(
1
±
k
%
)
⨯
1
N
of an input voltage signal of the multi-level buck converter,
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⨯
2
N
A control circuit for controlling a multi-level buck converter having N pairs of switches serially connected between an input terminal and a logic ground, wherein N is an integer equal to or greater than 2. The control circuit has a comparing circuit, a selecting circuit and a delay circuit. The comparing circuit compares a voltage feedback signal indicative of an output voltage signal of the multi-level buck converter with a reference signal to generate a comparing signal. The selecting circuit generates N set signals based on the comparing signal. The delay circuit delays the N set signals to provide N delay set signals to control the N pairs of switches when the output voltage signal falls in
(
1
±
k
%
)
⨯
1
N
of an input voltage signal of the multi-level buck converter,
(
1
±
k
%
)
⨯
2
N
of the input voltage signal, . . . , or
A control circuit for controlling a multi-level buck converter having N pairs of switches serially connected between an input terminal and a logic ground, wherein N is an integer equal to or greater than 2. The control circuit has a comparing circuit, a selecting circuit and a delay circuit. The comparing circuit compares a voltage feedback signal indicative of an output voltage signal of the multi-level buck converter with a reference signal to generate a comparing signal. The selecting circuit generates N set signals based on the comparing signal. The delay circuit delays the N set signals to provide N delay set signals to control the N pairs of switches when the output voltage signal falls in
(
1
±
k
%
)
⨯
1
N
of an input voltage signal of the multi-level buck converter,
(
1
±
k
%
)
⨯
2
N
of the input voltage signal, . . . , or
(
1
±
k
%
)
⨯
N
-
1
N
A control circuit for controlling a multi-level buck converter having N pairs of switches serially connected between an input terminal and a logic ground, wherein N is an integer equal to or greater than 2. The control circuit has a comparing circuit, a selecting circuit and a delay circuit. The comparing circuit compares a voltage feedback signal indicative of an output voltage signal of the multi-level buck converter with a reference signal to generate a comparing signal. The selecting circuit generates N set signals based on the comparing signal. The delay circuit delays the N set signals to provide N delay set signals to control the N pairs of switches when the output voltage signal falls in
(
1
±
k
%
)
⨯
1
N
of an input voltage signal of the multi-level buck converter,
(
1
±
k
%
)
⨯
2
N
of the input voltage signal, . . . , or
(
1
±
k
%
)
⨯
N
-
1
N
of the input voltage signal, wherein k is a proportional coefficient.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
58.
LLC resonant converter with rectifiers processing partial load current
An LLC resonant converter including a transformer, a switching full-bridge circuit, a resonant circuit, and a bridge rectifier. The switching full-bridge circuit has a first pair of switches and a second pair of switches, with the first pair of switches being connected between a DC input voltage and a second end of a secondary winding of the transformer, the second pair of switches being connected between a DC input voltage and a first end of the secondary winding of the transformer.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
59.
Single sided channel mesa power junction field effect transistor
Junction field effect transistors (JFETs) and related manufacturing methods are disclosed herein. A disclosed JFET includes a vertical channel region located in a mesa and a first channel control region located on a first side of the mesa. The first channel control region is at least one of a gate region and a first base region. The JEFT also includes a second base region located on a second side of the mesa and extending through the mesa to contact the vertical channel region. The vertical channel can be an implanted vertical channel. The vertical channel can be asymmetrically located in the mesa towards the first side of the mesa.
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
An integrated circuit with a fault reporting structure. The integrated circuit has at least one power MOSFET having a plurality of MOSFET cells with each MOSFET cell having a drain metal and a source metal, and the integrated circuit has a power MOSFET area for routing the drain metals and the source metals of the plurality of MOSFET cells. The fault reporting structure has a metal net routed in the power MOSFET area or in an area above or below the power MOSFET area.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
61.
Multi-phase voltage converter with individual phase temperature reporting
A multi-phase voltage converter has a plurality of integrated circuits (ICs), and a controller. Each IC has a control pin to receive a control signal, a monitoring pin and a temperature sensing circuit, the controller has a monitoring pin connected to the monitoring pin of each of the plurality of ICs to receive a monitoring signal. The temperature sensing circuit is connected to or disconnected from the monitoring pin of the corresponding one of the plurality of ICs in response to the control signal and the monitoring signal.
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H03K 5/24 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
62.
Single sided channel mesa power junction field effect transistor
Junction field effect transistors (JFETs) and related manufacturing methods are disclosed herein. A disclosed JFET includes a vertical channel region located in a mesa and a first channel control region located on a first side of the mesa. The first channel control region is at least one of a gate region and a first base region. The JFET also includes a second base region located on a second side of the mesa and extending through the mesa to contact the vertical channel region. The vertical channel can be an implanted vertical channel. The vertical channel can be asymmetrically located in the mesa towards the first side of the mesa.
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
63.
Trans-inductor voltage regulator with averaging inductor DCR current sensing
A trans-inductor voltage regulator (TLVR) has regulator blocks and transformers. Secondary windings of the transformers are connected in series with a compensation inductor to form a trans-inductor loop, which is connected to the output voltage of the TLVR instead of to ground. Primary windings of the transformers serve as output inductors of the regulator blocks. The inductance of each output inductor and the output inductance of the TLVR are input to an averaging network of an averaging inductor direct current resistance (DCR) current sense circuit to generate an average sensed voltage. The average sensed voltage is converted to an average sensed current, which is used by a controller to generate control signals that drive the regulator blocks to generate the output voltage of the TLVR.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/084 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters using a control circuit common to several phases of a multi-phase system
64.
Controller for driving a power switch in slave phase of a multiphase power converter and power converter comprising the same
A power converter includes a controller for driving a power switch in one phase of a plurality of phases of the power converter. The controller may have a first terminal for receiving an input switch driving signal which is used to drive a power switch in another phase of the power converter, and a second terminal for providing an output switch driving signal to drive the power switch in the one phase. The controller draws power from the input switch driving signal received at the first terminal, and is configured to provide the output switch driving signal based on the input switch driving signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
65.
3-D package structure for isolated power module and the method thereof
A 3-D package structure for isolated power module is discussed. The package structure has metal trace in a support layer (e.g. a substrate board), which is covered by two magnetic films from both sides, thus an effective transformer is formed. An IC die which contains a voltage regulator is stacked above the support layer, which significantly reduces the package size.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A semiconductor wafer processing method, having: ablating a back side of a semiconductor wafer with a laser ablation process; and etching the back side of the semiconductor wafer with an etching process; wherein the laser ablation process forms a pattern in the back side of the semiconductor wafer; wherein the etching process preserves the pattern in the back side of the semiconductor wafer.
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Integrated circuits; Electronic integrated circuits; Integrated semiconductor circuits; Semiconductors; Semiconductor chips; Printed circuits; Sensor-embedded integrated circuits; Multiplexers; Routers; Transceivers; Audio/Visual receivers; Optical transmitters; Radio frequency transmitters; Transmitters of electronic signals; Telecommunications transmitters; Transponders; Network communication equipment; Light emitting diode drivers; White light emitting diode drivers; Organic light emitting diode drivers; Signal converters; Signal processors; Digital signal processors; Data processing apparatus; Computer hardware, namely, central processing units (CPU); Communication interface units; Micro control units with embedded software interface; Audio amplifiers; Preamplifiers; Light dimmers; Luminescent screens; Self-starter ignition switches; Telecommunication switches; Computer network switches; Computer switches; Electric switches; Electrical switches; Electric converters; AC/DC converters; Battery chargers; DC-DC converters; DC/AC inverters; Integrated circuits for the conversion and management of power used in electrical circuits; Electric sensors; Optical sensors; Electronic sensors; Mutual transducer; Position sensor used for motor positioning and motor control; Electrical controllers; Power controllers; Integrated circuit control boards for motors; Electronic controls for motors; Electronic power supplies for driving electric motors; Servo-motors and drivers; Brushless DC motors; Brushless DC motor drivers; Downloadable computer software for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; Test kits and design tool kits comprised of software communication interface, controllers, boards being integrated circuit cards, namely, evaluation boards and demonstration boards, and computer software for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; Test kits, design kits and tool kits comprised of software communication interface, controllers, and computer software for configuration and design of integrated circuits. Software as a Service (SaaS) for configuration and design of integrated circuits, semiconductor chips, converters, sensors, motor drivers, integrated motor and driver modules, and controllers.
A MOSFET fabricated in a semiconductor substrate, includes: a gate oxide region formed atop the semiconductor substrate; a gate polysilicon region formed on the gate oxide region; a source region of a first doping type formed in the semiconductor substrate and located at a first side of the gate polysilicon region; and a drain region of the first doping type formed in the semiconductor substrate and located at a second side of the gate polysilicon region. The gate polysilicon region has a first sub-region of the first doping type, a second sub-region of the first doping type, and a third sub-region of a second doping type, wherein the first sub-region is laterally adjacent to the source region, the second sub-region is laterally adjacent to the drain region, and the third sub-region is formed laterally between the first and second sub-regions.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A power supply module having at least one inductor modules, a top PCB mounted on top of the at least one inductor modules, and at least one pair of power device chips mounted on top of the top PCB, wherein power pins and signal pins for connecting the top PCB and a board that the at least one inductor modules are attached to, are implemented by metal layers wrapping each of the at least one inductor modules.
Junction field effect transistors (JFETs) and related manufacturing methods are disclosed herein. A disclosed four terminal JFET includes an integrated high voltage capacitor (HVC). The JFET includes a first terminal coupled to a drain region, a second terminal coupled to the source region, a third terminal coupled to the base region, and an integrated HVC terminal coupled to an integrated HVC electrode which forms an HVC with the drain region. The JFET also includes a channel formed by a channel region. A bias on the base region fully depletes the channel of majority carriers. The channel has an unbiased concentration of majority carriers. The integrated HVC electrode is positioned relative to the channel region such that applying the bias to the integrated HVC terminal depletes the channel by at most ten percent of the unbiased concentration of majority carriers.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
A multi-port battery charge and discharge system used for battery pack charge and discharge. The multi-port battery charge and discharge system has a plurality of voltage converting circuits, each of which can operate in a charge mode to supply load and charge a battery pack or in a discharge mode to supply power sinks. The multi-port battery charge and discharge system further has at least one switch module providing an additional current signal to charge the battery pack.
G06F 1/26 - Power supply means, e.g. regulation thereof
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
72.
Thin wafer process for improved crystal utilization of wide bandgap devices
A method of fabricating a wide bandgap device includes providing a thin native substrate. An epitaxial layer is grown on a surface of the native substrate. After growing the epitaxial layer, a handle substrate is attached to the opposite surface of the native substrate by way of an interface layer. With the handle substrate providing mechanical support, wide bandgap devices are fabricated in the epitaxial layer using a low-temperature fabrication process. The handle substrate is detached from the native substrate after fabrication of the wide bandgap devices.
H10D 62/832 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
73.
Power switch device driver with energy recovering and the method thereof
A power switch device driver with energy recovery is discussed. The power switch device adopts four switches and one inductor with appropriate control to insure the switching speed and save the power loss.
H03K 17/0812 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
H03K 17/0412 - Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
74.
Led driving system with communication between multiple integrated circuits
An LED driving system for synchronizing two LED driving integrated circuits to drive LED strings. The LED driving system sequentially activates the LED strings driven by the first LED driving integrated circuit and then outputs a downstream enabling signal from the first LED driving integrated circuit to the second LED driving integrated circuit to activate the LED strings driven by the second LED driving integrated circuit.
A LED driving system for driving a LED matrix. The LED driving system includes an interconnection structure having a first surface and a second surface opposite to the first surface and a plurality of driver dies/chips attached to the first surface of the interconnection structure. The LED matrix is divided into a plurality of sub LED matrix sections that are attached to the second surface of the interconnection structure. The interconnection structure is configured to electrically couple each one of the plurality of sub LED matrix sections to a corresponding one driver die/chip in the plurality of driver dies/chips.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A sandwich structure power supply module, having: an inductor pack having a first inductor and a second inductor; a top PCB (Printed Circuit Board) on top of the inductor pack; and a first power device chip and a second power device chip on top of the top PCB, wherein the first power device chip has at least one pin electrically connected to the first inductor via the top PCB, and the second power device chip has at least one pin electrically connected to the second inductor via the top PCB; wherein each inductor comprises one winding having a first end and a second end, and wherein at least one of the first end and the second end of each winding is bent to and extended at a plane perpendicular to an axis along a length of the winding.
A sandwich structure power supply module, having: an inductor pack having at least one inductor; a top PCB (Printed Circuit Board) on top of the inductor pack; and at least one power device chip on top of the top PCB, wherein each one of the power device chips has at least one pin connected to an associated inductor via the top PCB; wherein the inductor pack is wrapped with metal layers, wherein each two metal layers are lied against to a same surface of the inductor pack, with an isolation layer in between, and wherein the two metal layers are connected to different potentials.
A sandwich structure power supply module, having: an inductor pack having a first inductor and a second inductor; a bottom PCB (Printed Circuit Board) at the bottom of the sandwich structure power supply module; a top PCB on top of the inductor pack; a connector coupled between the bottom PCB and the top PCB, coupling solder pads on the bottom PCB to solder pads on the top PCB; and a first and a second power device chips on top of the top PCB, wherein the first power device chip and the second power device chip respectively has at least one pin coupled to the first inductor and the second inductor via the top PCB; wherein each inductor comprises one winding having a first end and a second end bent to and extended at a plane perpendicular to an axis along a length of the winding.
A hybrid DC-DC converter includes a converter circuit, a bridge circuit with a bridge path that includes a winding of a transformer, and another bridge circuit with a bridge path that includes another winding of the transformer. Current through the bridge path of the other bridge circuit flows through the converter circuit in one direction and bypasses the converter circuit in the other direction. The converter circuit can operate in buck, boost, or buck-boost mode.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
An energy recycle circuit for a flyback circuit, the flyback circuit has a primary winding of a transformer a primary switch. The energy recycle circuit has an energy recycle branch coupled in parallel with the primary winding, and an integrated circuit having a plurality of pins. The energy recycle branch has an auxiliary switch and a clamp capacitor connected in series. Among the plurality of pins, a first pin receives an external supply voltage. A second pin is used as a power ground that is different from a primary power ground. A third pin is used to sense a branch current flowing through the energy recycle branch. A fourth pin is used to control an operation of the auxiliary switch. A fifth pin that is connected to an external resistor for setting a maximum ON-time threshold of the auxiliary switch.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
A trans-inductor voltage regulator (TLVR) circuit has multiple phases and a regulator block for each phase. Each regulator block is connected to an output capacitor of the TLVR circuit by way of a first winding of a corresponding nonlinear transformer. A second winding of the nonlinear transformers are connected in series with a compensation inductor. The first winding of the corresponding nonlinear transformer has a first inductance when a load current is at a first level, and the first winding of the corresponding nonlinear transformer has a second inductance that is less than the first inductance when the load current is at a second level that is higher than the first level.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
82.
Trans-inductor voltage regulator with nonlinear compensation inductor
A trans-inductor voltage regulator (TLVR) circuit has multiple phases and a regulator block for each phase. Each regulator block has a winding of a transformer as an output inductor. The other windings of the transformers are connected in series with a nonlinear compensation inductor. The compensation inductor has a large inductance when the compensation inductor current is responsive to a steady state load current and has a small inductance when the compensation inductor current is responsive to a transient load current.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Integrated circuits; Electronic integrated circuits; Integrated semiconductor circuits; Semiconductors; Semiconductor chips; Printed circuits; Sensor-embedded integrated circuits; Multiplexers; Routers, namely, USB wireless routers, wireless routers, and network routers; Transceivers; audiovisual receivers; Optical transmitters; Radio frequency transmitters; Transmitters of electronic signals; Telecommunications transmitters; Transponders; Network communication equipment, namely, change-over switches for telecommunications apparatus; Light emitting diode drivers; White light emitting diode drivers; Organic light emitting diode drivers; Signal converters, namely, digital to analogue converters, level converters, current converters, electric power converters, analogue to digital converters, electricity converters, frequency converters; Signal processors; Digital signal processors; Data processing apparatus; Computer hardware, namely, central processing units (CPU); Communication interface units in the nature of computer network interface devices, electronic display interfaces, and audio interfaces; Micro control units with embedded software interface; Audio amplifiers; Preamplifiers; Light dimmers; Luminescent screens; Telecommunication switches; Computer network switches; Computer switches; Electric switches; Electrical switches; Electric converters; AC/DC power converters; Battery chargers; DC-DC power converters; DC/AC power inverters; Integrated circuits for the conversion and management of power used in electrical circuits; Electric sensors; Optical sensors; Mutual electrical transducer; Mutual electroacoustic transducer; Position sensor used for motor positioning and motor control; Electrical controllers; Power controllers; Integrated circuit control boards for motors; Electronic controls for motors; Electronic power supplies for driving electric motors; Brushless DC motors; Brushless DC motor drivers; Downloadable computer software for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; Test kits and design tool kits comprised of software communication interface, controllers, boards being integrated circuit cards, namely, evaluation boards and demonstration boards, and recorded and downloadable computer software for configuration and design of integrated circuits, semiconductor chips, sensors, motor drivers, integrated motor and driver modules, and controllers; Test kits, design kits and tool kits comprised of software communication interface, controllers, and recorded and downloadable computer software for configuration and design of integrated circuits Software as a Service (SaaS) featuring software for configuration and design of integrated circuits, semiconductor chips, converters, sensors, motor drivers, integrated motor and driver modules, and controllers
84.
Multi-input single output power system and operating method thereof
A multi-input single output power system for outputting an output voltage on an output node. It includes a first integrated circuit (IC) converter device and a second IC converter device. The first IC converter device has a first pin to receive a first input voltage, a second pin to output the output voltage, and a first power unit coupled between the first pin and the second pin. The second IC converter device has a first pin to receive a second input voltage, a second pin to output the output voltage, a second power unit coupled between the first pin of the second IC converter device and the second pin of the second IC converter device, and a third pin. The third pin receives an external phase shedding control signal to determine whether to stop the second power unit from providing power to the output node.
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
A feedback control circuit in an LED driving circuit for driving a plurality of LED strings. Each LED string provides a headroom detecting voltage. The feedback control circuit has a status detecting circuit, a counting circuit and a modulating circuit. The status detecting circuit compares each headroom detecting voltage with a low headroom threshold voltage and a high headroom threshold voltage and generates an up self-status signal and a down self-status signal. The counting circuit counts or keeps unchanged and then generates a counting signal based on the up self-status signal and the down self-status signal. The modulating circuit generates a modulating signal based on the counting signal. And based on the modulating signal, the feedback control circuit generates a feedback control signal to regulate a bias voltage supplying the plurality of LED strings.
H05B 45/46 - Details of LED load circuits with an active control inside an LED matrix having LEDs disposed in parallel lines
H03K 5/24 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
86.
Control circuit for multi-phase voltage regulator and associated control method
A trans-inductor voltage regulator (TLVR) circuit has multiple phases and a switching circuit for each phase. Each switching circuit has a winding of a transformer as an output inductor. The other windings of the transformers are connected in series with a nonlinear compensation inductor. An on-time period of each switching circuit is reduced when a load transient condition occurs or when a load current starts to be stable after the load transient condition.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/04 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
A battery charge current management system used for charging battery packs. The battery charge current management system has a voltage converting circuit and at least one switch module. The voltage converting circuit can operate at a charge mode or a discharge mode. The voltage converting circuit can serve to provide a master charge current signal to supply a system load and charge battery packs when it operates at the charge mode. The voltage converting circuit further controls the at least one switch module to provide at least one additional charge current signal to supply the system load and charge battery packs.
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
88.
BATTERY DISCHARGE CURRENT MANAGEMENT SYSTEM AND RELATED INTEGRATED CIRCUIT
A battery discharge current management system used for discharging battery packs. The battery discharge current management system has a voltage converting circuit and at least one switch module. The voltage converting circuit can operate at a charge mode or a discharge mode. The voltage converting circuit can serve to discharge battery packs so as to provide a master discharge current signal to other devices when it operates at the discharge mode. The voltage converting circuit further controls the at least one switch module to discharge the battery packs so as to provide at least one additional discharge current signal.
A power supply having at least one PMIC provides flexible control to the power manage systems. The PMIC has an enable pin configured to receive a control signal, and a clock pin configured to generate and/or receive a series of clock pulses, so as to facilitate the operation of the PMIC.
The present disclosure describes vertical transistor device and methods of making the same. The vertical transistor device includes substrate layer of first conductivity type, drift layer of first conductivity type formed over substrate layer, body region of second conductivity type extending vertically into drift layer from top surface of drift layer, source region of first conductivity type extending vertically from top surface of drift layer into body region, dielectric region including first and second sections formed over top surface, buried channel region of first conductivity type at least partially sandwiched between body region on first side and first and second sections of dielectric region on second side opposite to first side, gate electrode formed over dielectric region, and drain electrode formed below substrate layer. Dielectric region laterally overlaps with portion of body region. Thickness of first section is uniform and thickness of second section is greater than first section.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
91.
Integrated circuit of a buck-boost converter with output current sensing function
An integrated circuit of a buck-boost converter working in a buck mode with a buck power switching cycle, a boost mode with a boost power switching cycle or a buck-boost mode with a buck-boost power switching cycle. The integrated circuit integrates a first power switch, a second power switch, a third power switch and a fourth power switch, and an output current sensing circuit. The buck-boost power switching cycle consists of a first buck-boost phase, a second buck-boost phase and a third buck-boost phase. The output current sensing circuit samples the current flowing through the first power switch during the second buck-boost phase and the current flowing through the fourth power switch during the third buck-boost phase so as to generate the output current information.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
A current sensing circuit for sensing a current flowing through a current sense resistor, wherein the current sense resistor is configured to receive a variable power input voltage. The current sensing circuit includes: a current sense amplifier having a first input terminal configured to be coupled to a first terminal of the current sense resistor to receive the power input voltage, a second input terminal configured to be coupled to a second terminal of the current sense resistor, and an output terminal for providing a current sensing signal indicative of the current flowing through the current sense resistor; and a calibration circuit configured to be coupled to the first input terminal of the current sense amplifier. The calibration circuit is configured to convert the power input voltage into a calibration current, and provide the calibration current to the current sense amplifier, so as to reduce a change in the current sensing signal caused by a change in the power input voltage.
Junction field effect transistors (JFETs) and related manufacturing methods are disclosed herein. A disclosed JFET includes a vertical channel region located in a mesa and a first channel control region located on a first side of the mesa. The first channel control region is at least one of a gate region and a first base region. The JEFT also includes a second base region located on a second side of the mesa and extending through the mesa to contact the vertical channel region. The vertical channel can be an implanted vertical channel. The vertical channel can be asymmetrically located in the mesa towards the first side of the mesa.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
94.
SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR
Junction field effect transistors (JFETs) and related manufacturing methods are disclosed herein. A disclosed JFET includes a vertical channel region located in a mesa and a first channel control region located on a first side of the mesa. The first channel control region is at least one of a gate region and a first base region. The JEFT also includes a second base region located on a second side of the mesa and extending through the mesa to contact the vertical channel region. The vertical channel can be an implanted vertical channel. The vertical channel can be asymmetrically located in the mesa towards the first side of the mesa.
H01L 29/68 - Types of semiconductor device controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
A FET device has a substrate, a plurality of repetitive source stripes, a first layout of drain stripe having a first drift region and a first drain region, a second layout of drain stripe having a second drift region and a second drain region, a first drain contactor contacted with the first drain region and connected to a drain terminal, a second drain contactor contacted with the second drain region and connected to a first gate terminal, a source contactor contacted with a source region in each of the plurality of repetitive source stripes and connected to a source terminal, a first gate region positioned between the source region and the first drain region and connected to the first gate terminal, and a second gate region positioned between the source region and the second drain region and connected to a second gate terminal.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
96.
Adaptive constant on time converter and the method thereof
A voltage converter with a high side power switch, having: an off control circuit, having a first input terminal configured to receive an input voltage, a second input terminal configured to receive an output voltage, a third input terminal configured to receive a current representing signal indicative of a current flowing through the high side power switch, a fourth input terminal configured to receive an on-set signal in response to an on operation of the high side power switch, and an output terminal configured to provide an off control signal to indicate an end of an on time period of the high side power switch; wherein the on time period of the high side power switch is regulated by the input voltage, the output voltage and the current representing signal.
Voltage regulators generate voltage rails that power a central processing unit (CPU). The CPU communicates power management instructions to a power supply controller that drives the voltage regulators. The power supply controller sets a voltage level of a voltage rail generated by a voltage regulator in accordance with a power management instruction received from the CPU. The power supply controller enables the voltage regulator to operate in discontinuous conduction mode (DCM) independent of power state commands from the CPU.
G06F 1/3296 - Power saving characterised by the action undertaken by lowering the supply or operating voltage
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
G06F 1/28 - Supervision thereof, e.g. detecting power-supply failure by out of limits supervision
G06F 1/3287 - Power saving characterised by the action undertaken by switching off individual functional units in the computer system
98.
Resonant converter circuit with switching frequency control based on input voltage
A control method for regulating the switching frequency of a resonant converter having an input terminal to receive an input voltage and an output terminal to output an output voltage. The control method is sensing the input voltage and adjusting the switching frequency based on the comparison of the input voltage with a reference threshold voltage. When the input voltage is less than the reference threshold voltage, the switching frequency is adjusted to decrease, and when the input voltage is higher than the reference threshold voltage, the switching frequency is adjusted to increase.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/00 - Conversion of DC power input into DC power output
An LED driving system with a master-slave architecture. The LED driving system has at least two LED driving circuits which both have a first status detecting circuit, a second status detecting circuit and a first feedback control circuit. The first status detecting circuit receives a plurality of headroom detecting voltages provided by a plurality of LED strings and generates at least one self-status signal. The second status detecting circuit receives a downstream feedback signal and generates at least one downstream status signal. The first feedback control circuit generates a first feedback control signal based on the at least one self-status signal and the at least one downstream status signal. The second status detecting circuit of one LED driving circuit is coupled to the first feedback control circuit of the other LED driving circuit.
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
H03K 5/24 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
100.
Bi-directional battery charging circuit with voltage regulation control
An electric system has an input terminal to receive an input voltage, a system output terminal to provide a system voltage, and N charging units for charging N loads respectively. The electric system has an input switch coupled between the input terminal and a first terminal, a switching circuit coupled between the first terminal and the system output terminal. The switching circuit converts the a boost output voltage at the first terminal to the system voltage, or converts the system voltage to the boost output voltage. The electric system further has a voltage control module having N input terminals coupled to the N charging units respectively, the voltage control module senses N charging currents passing through the N charging units respectively, and adjusts the boost output voltage based on the N charging currents.
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
G06F 1/30 - Means for acting in the event of power-supply failure or interruption, e.g. power-supply fluctuations
H02J 9/06 - Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
