A dopant feeding device for releasing dopant into a feeder system during doping of a crystal growing system includes a dopant container for holding the dopant, a lower valve, and an upper valve. The dopant container includes a wall defining a lower opening for releasing the dopant therethrough. The lower valve is positioned adjacent to the lower opening and is movable between a closed position that is in contact with the wall to prevent passage of dopant through the lower opening and an open position that is spaced from the lower opening to allow passage of dopant therethrough. The upper valve is positioned above and connected to the lower valve. The upper valve is disposed within the dopant container and is movable between a first position that is spaced from the dopant container and a second position that is in contact with the dopant container.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
A dopant feeding device for releasing dopant into a feeder system during doping of a crystal growing system includes a dopant container for holding the dopant, a lower valve, and an upper valve. The dopant container includes a wall defining a lower opening for releasing the dopant therethrough. The lower valve is positioned adjacent to the lower opening and is movable between a closed position that is in contact with the wall to prevent passage of dopant through the lower opening and an open position that is spaced from the lower opening to allow passage of dopant therethrough. The upper valve is positioned above and connected to the lower valve. The upper valve is disposed within the dopant container and is movable between a first position that is spaced from the dopant container and a second position that is in contact with the dopant container.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
3.
GAS DOPING SYSTEMS FOR CONTROLLED DOPING OF A MELT OF SEMICONDUCTOR OR SOLAR-GRADE MATERIAL
A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
4.
FABRICATION OF INDIUM-DOPED SILICON BY THE CZOCHRALSKI METHOD
A method of growing a monocrystalline silicon ingot is described. The method includes the steps of providing a monocrystalline ingot growing apparatus including a chamber having an internal pressure, and a crucible disposed within the chamber, preparing a silicon melt in the crucible, introducing an inert gas into the chamber from a gas inlet above the silicon melt, wherein the inert gas flows over the surface of the silicon melt and has a flow rate, introducing a volatile dopant including indium into the silicon melt, growing an indium-doped monocrystalline silicon ingot, and controlling the indium dopant concentration in the ingot by adjusting the ratio of the inert gas flow rate and the internal pressure of the chamber.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
A solar cell is provided, the solar cell fabricated from an indium-doped monocrystalline silicon wafer sliced from an ingot grown by the Czochralski method. The solar cell is characterized by high efficiency and low light induced degradation.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
A doping system for introducing liquid dopant into a melt of semiconductor or solar-grade material includes a dopant reservoir for holding dopant and a feeding tube. The dopant reservoir includes a body and a tapered end defining an opening having a smaller cross-sectional area than a cross- sectional area of the body. The feeding tube includes a first end extending from the opening of the reservoir, a second end distal from the first end, an angled tip disposed at the second end of the feeding tube, a first restriction for inhibiting the passage of solid dopant through the feeding tube, and a second restriction for controlling the flow of liquid dopant, the second restriction disposed near the second end of the feeding tube.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
A method for melting granular polysilicon in a crucible to reduce silicon splatter includes melting a quantity of polysilicon in the crucible at a first pressure and a first argon flow rate to the crucible to form molten silicon, increasing pressure from the first pressure to a second pressure, and increasing the first argon flow rate to a second argon flow rate. The method also includes supplying granular polysilicon into the crucible at the second pressure and the second argon flow rate and decreasing the pressure to a pressure less than the second pressure and decreasing the argon flow rate to an argon flow rate less than the second argon flow rate after supplying the granular polysilicon into the crucible.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
A method of loading a crucible includes loading a first layer of polysilicon chunks into the crucible and loading a second layer of granular polysilicon into the crucible to form a polysilicon charge such that the packing density of the polysilicon charge within the crucible is greater than 0.70.
C30B 11/04 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
A method for machining a profile into a silicon seed rod using a machine. The silicon seed rod is capable of being used in a chemical vapor deposition polysilicon reactor. The machine includes a plurality of grinding wheels. The method includes grinding a v-shaped profile into a first end of the silicon seed rod with one of the plurality of grinding wheels and grinding a conical profile in a second end of the silicon seed rod with another of the plurality of grinding wheels.
B24B 49/12 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
B24B 19/00 - Single purpose machines or devices for particular grinding operations not covered by any other main group
B24B 7/16 - Single-purpose machines or devices for grinding end faces, e.g. of gauges, rollers, nuts or piston rings
10.
SYSTEMS AND METHODS FOR CONTROLLING SURFACE PROFILES OF WAFERS SLICED IN A WIRE SAW
Systems and methods are disclosed for controlling the surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot (30) by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid that comes in contact with the ingot (30). Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
11.
SYSTEMS AND METHODS FOR CONTROLLING SURFACE PROFILES OF WAFERS SLICED IN A WIRE SAW
Systems (100) and methods are disclosed for controlling the surface profiles of wafers cut in a wire saw machine (103). The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot (102) by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings (114) supporting wire guides (106) of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.
A system (100) for ultrasonically cleaning one or more wires (102) of a wire saw (104) for slicing semiconductor or solar material (105) into wafers. The system (100) includes an ultrasonic transducer (302) connected to a sonotrode (304). The system (100) also includes a sonotrode plate adjacent to one or more of the wires (102). The sonotrode plate has an opening that exposes the sonotrode (304) to one or more of the wires (102). The system (100) further includes a tank (202) for delivering a flow of liquid to contact the sonotrode (304) and one or more of the wires (102). The tank (202) is positioned on the same side of the wires (102) as the sonotrode plate. The ultrasonic transducer (302) is configured to vibrate and form cavitations in the liquid for the removal of contaminants from a surface of one or more of the wires (102).
B08B 7/02 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
B08B 3/12 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
13.
SAW FOR CUTTING SILICON INTO SEED RODS FOR USE IN A CHEMICAL VAPOR DEPOSITION POLYSILICON REACTOR
Saw for cutting silicon into seed rods for use in a chemical vapor deposition polysilicon reactor Systems and methods are provided for cutting silicon into seed rods for use in a chemical vapor deposition polysilicon reactor. A method includes cutting the silicon ingot with saw blades into silicon slabs, rotating the silicon slabs, and cutting the silicon slabs into smaller-sized silicon seed rods for use in the chemical vapor deposition polysilicon reactor.
Systems and methods are disclosed for monitoring and controlling silicon rod temperature. One example is a method of monitoring a surface temperature of at least one silicon rod in a chemical vapor deposition (CVD) reactor during a CVD process. The method includes capturing an image of an interior of the CVD reactor. The image includes a silicon rod. The image is scanned to identify a left edge of the silicon rod and a right edge of the silicon rod. A target area is identified midway between the left edge and the right edge. A temperature of the silicon rod in the target area is determined.
C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C23C 16/52 - Controlling or regulating the coating process
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Systems and methods are provided for cleaning an interior surface of a chemical vapor deposition reactor bell used in the production of polysilicon. In one method, the reactor bell is positioned atop a frame; a first actuator is operated such that the brush engages the interior surface of the reactor bell. A flow of liquid is directed from a nozzle against the interior surface of the reactor bell, and a second actuator is operated to rotate the brush.
Systems and methods are provided for controlling silicon rod temperature. In one example, a method of controlling a surface temperature of at least one silicon rod in a chemical vapor deposition (CVD) reactor during a CVD process is presented. The method includes determining an electrical resistance of the at least one silicon rod, comparing the resistance to a set point to determine a difference, and controlling a power supply to control a power output coupled to the at least one silicon rod to minimize an absolute value of the difference.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
17.
TOOL FOR HARVESTING POLYCRYSTALLINE SILICON-COATED RODS FROM A CHEMICAL VAPOR DEPOSITION REACTOR
A tool for harvesting polycrystalline silicon-coated rods from a chemical vapor deposition reactor includes a body including outer walls sized for enclosing the rods within the outer walls. Each outer wall includes a door for allowing access to at least one of the rods.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
18.
SHELL AND TUBE HEAT EXCHANGERS AND METHODS OF USING SUCH HEAT EXCHANGERS
Shell and tube heat exchangers that include a baffle arrangement that improves the temperature profile and flow pattern throughout the exchanger and/or that are integral with a reaction vessel are disclosed. Methods for using the exchangers including methods that involve use of the exchanger and a reaction vessel to produce a reaction product gas containing trichlorosilane are also disclosed.
F28D 7/16 - Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged in parallel spaced relation
F28F 9/22 - Arrangements for directing heat-exchange media into successive compartments, e.g. arrangements of guide plates
19.
BELL JAR FOR SIEMENS REACTOR INCLUDING THERMAL RADIATION SHIELD
A bell jar for a Siemens reactor of the type used to deposit polycrystalline silicon on a plurality of heated silicon rods via chemical vapor deposition process. The bell jar includes a thermally conductive inner wall having an interior surface at least partially defining an interior space adapted to receive the plurality of heated silicon rods therein. A thermal radiation shield is in the interior space generally adjacent to and in opposing relationship with the interior surface of the inner wall. The thermal radiation shield is substantially opaque to thermal radiation emitted from the plurality of heated silicon rods in the interior space of the bell jar.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
patents
