In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit includes a series electronically variable capacitor (EVC) having first fixed capacitors. Each of the first fixed capacitors has a corresponding switch for switching in and out the fixed capacitor to alter the series variable capacitance. Each switch includes one or more diodes. A first inductor has a first terminal electrically coupled to the common ground and a second terminal electrically coupled between the RF input and the RF output. A control circuit determines a first parameter related to the plasma chamber while the RF source is providing the RF signal to the RF input. While the RF signal continues to be provided to the RF input, the control circuit alter the series variable capacitance based on the determined first parameter. The alteration causes RF power reflected back to the RF source to decrease.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/52 - Controlling or regulating the coating process
In one embodiment, an impedance matching network includes variable capacitors. A first variable capacitor has a terminal electrically connected to the RF input. A second variable capacitor has a terminal electrically connected to the RF output. At least one of the variable capacitors is an electrically variable capacitor (EVC). The EVC includes a plurality of parallel-coupled capacitors comprising fine capacitors increasing in capacitance and coarse capacitors having a greater capacitance. A capacitor position for the EVC for enabling an impedance match is determined by a processor using software. An impedance match is enabled by directly switching the electronically variable capacitor to the determined capacitor position.
H03H 7/40 - Automatic matching of load impedance to source impedance
H01L 21/66 - Testing or measuring during manufacture or treatment
H03H 11/30 - Automatic matching of source impedance to load impedance
C23C 16/52 - Controlling or regulating the coating process
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
3.
Combined RF generator and RF solid-state matching network
In one embodiment, a method of matching an impedance is disclosed. An impedance matching network is coupled between a radio frequency (RF) source and a plasma chamber. The matching network includes a variable reactance element (VRE) having different positions for providing different reactances. The RF source has an RF source control circuit carrying out a power control scheme to control a power delivered to the matching network. Based on a determined parameter, a new position for the VRE is determined to reduce a reflected power at the RF input of the matching network. The matching network provides a notice signal to the RF source indicating the VRE will be altered. In response to the notice signal, the RF source control circuit alters the power control scheme. While the power control scheme is altered, the VRE is altered to the new position.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In one embodiment, an RF impedance matching network is disclosed. The matching network is coupled between an RF source having a variable frequency and a plasma chamber having a variable chamber impedance. The matching network includes a variable reactance element (VRE), and a control circuit coupled to the VRE and a sensor, the sensor configured to detect an RF parameter. To cause an impedance match between the RF source and the plasma chamber, the control circuit determines, based on the detected RF parameter and a VRE configuration, a new source frequency for the RF source. The impedance match then causes the variable frequency of the RF source to alter to the new source frequency.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
In one embodiment, an impedance matching network includes a variable reactance circuit providing a variable capacitance or inductance. The variable reactance circuit includes reactance components and corresponding switching circuits. Each of the switching circuits includes a diode and a driver circuit to switch the diode. The driver circuit includes first and second switches coupled in series. A first driver is coupled to the first switch, a second driver is coupled to the second switch, and a third driver is coupled to the first and second drivers. The third driver provides a first signal to the first driver, and a second signal to the second driver. In providing the signals, the third driver increases and decreases a duration of a dead time between (a) driving the first driver on and the second driver off, or (b) driving the second driver on and the first driver off.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H03H 7/40 - Automatic matching of load impedance to source impedance
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H03K 17/691 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
H03K 17/795 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H02M 3/00 - Conversion of DC power input into DC power output
In one embodiment, a switching circuit includes an electronic switch comprising one or more diodes for switching a reactance element within an electronically variable reactance element. A first power switch receives an input signal and a first voltage, and switchably connects the first voltage to a common output in response to the received input signal. A second power switch receives an input signal and a second voltage, and switchably connects the second voltage to the common output in response to the received input signal. The second voltage is opposite in polarity to the first voltage. The first power switch and the second power switch asynchronously connect the first voltage and the second voltage, respectively, to the common output, the one or more diodes of the electronic switch being switched according to the first voltage or the second voltage being connected to the common output.
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
7.
Impedance matching network for diagnosing plasma chamber
In one embodiment, a method of using an impedance matching network to determine a plasma chamber characteristic is disclosed. An impedance matching network is coupled between a radio frequency (RF) source and a plasma chamber. The matching network includes a variable reactance element (VRE) having different positions for providing different reactances. A characteristic of the plasma chamber is determined based on reference values for a parameter of the matching network and a current value. Based thereon, either a visual or audible indication of the determined characteristic of the plasma chamber is provided, or an action is taken to address the determined characteristic.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
8.
Semiconductor manufacturing using artificial intelligence
In one embodiment, a method, a method of manufacturing a semiconductor is disclosed. A monitored semiconductor manufacturing system (monitored system) is operated over a period of time, the monitored system comprising an impedance matching network coupled between a radio frequency (RF) source and a plasma chamber. First values for a parameter of the monitored system are received, the first values comprising different values for the parameter over the time period of operation of the monitored system, and a learning model is trained using the first values for the parameter. A substrate is then placed in a plasma chamber of a controlled semiconductor manufacturing system (controlled system). A characteristic of the controlled system is determined using a current value of the parameter and the trained learning model. An action is then taken upon the controlled system to address the determined characteristic.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
In one embodiment, an impedance matching network includes an electronically variable reactance element (EVRE) comprising discrete reactance elements and corresponding switches. The switches are configured to switch in and out the discrete reactance elements to alter a total reactance provided by the EVRE. A monitoring circuit is operably coupled to the EVRE. For each discrete reactance element, the monitoring circuit monitors a value related to the discrete reactance element or its corresponding switch. Upon determining the monitored value exceeds a predetermined amount, the monitoring circuit the discrete reactance element of the EVRE from switching in or out.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H03H 7/40 - Automatic matching of load impedance to source impedance
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H03K 17/691 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
H03K 17/795 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
In one embodiment, a method of impedance matching and controlling the power delivered to a plasma chamber is disclosed. A matching network includes a variable reactance element (VRE), the VRE having different positions for providing different reactances. Based on a determined parameter, the method determines potential new positions for the VRE that would have a threshold effectiveness in providing an impedance match between the RF source and the plasma chamber. A preferred position for the VRE is determined by determining the one of the potential new positions meeting the threshold effectiveness whose efficiency in delivering RF power from the RF input to the RF output would cause an RF power at the RF output to be closest to a desired RF power.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
11.
Impedance matching network and method with reduced memory requirements
In one embodiment, the present disclosure is directed to a method for impedance matching. A matching network includes a first reactance element and a second reactance element. A sensor detects a value related to the plasma chamber or the matching network, and a system parameter is determined based on the detected value. For the determined system parameter, an error-related value is calculated for each of a plurality of potential first reactance element positions or for each of a plurality of potential second reactance element positions. A new first reactance element position and a new second reactance element position are calculated based on the error-related values calculated in the prior step. The first reactance element and the second reactance element are then altered to their new positions to reduce a reflected power.
H03H 7/40 - Automatic matching of load impedance to source impedance
H01L 21/66 - Testing or measuring during manufacture or treatment
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
In one embodiment, the present disclosure is directed to a method for impedance matching. A matching network includes first and second reactance elements configured to provide variable positions. A first parameter of the matching network is determined based on a detected value. The method determines first two-port parameters from a first one-dimensional array that corresponds to a first portion of the matching network using the first reactance element position, and second two-port parameters from a second one-dimensional array that corresponds to a second portion of the matching network using the second reactance element position. An output parameter is calculated based on the first parameter, the first two-port parameters, and the second two-port parameters. New first and second reactance element positions are determined from a match position table using the calculated output parameter. The method then alters the reactance elements accordingly to reduce a reflected power.
H01L 21/66 - Testing or measuring during manufacture or treatment
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
In one embodiment, a method of matching an impedance is disclosed. A matching network includes an electronically variable reactance element (EVRE) comprising discrete reactance elements and corresponding switches. For a determined parameter, potential new positions for the EVRE are determined, the potential new positions having differing effectiveness in causing an impedance match between an RF source and a plasma chamber. The discrete reactance elements of the EVRE that are currently restricted from switching are determined. A preferred position for the EVRE is determined as being the one of the potential new positions that provides greatest effectiveness in providing an impedance match while also not requiring switching in or out of any of the discrete reactance elements that are currently restricted from switching.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
In one embodiment, the present disclosure may be directed to an impedance matching network that includes an electronically variable capacitor (EVC). The EVC includes discrete capacitors and corresponding switches, each switch configured to switch in and out one of the discrete capacitors to alter a capacitance of the EVC. The switches are operably coupled to a power supply providing a blocking voltage to the switches. A control circuit determines a blocking voltage value of the power supply. Upon determining the blocking voltage value is at or below a predetermined first level, the control circuit causes a limited altering of the capacitance of the EVC, the limited altering limiting the number or type of discrete capacitors to switch in or out based on the extent to which the blocking voltage value is at or below the first level.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
In one embodiment, the present disclosure may be directed to a method for impedance matching. A matching network is positioned between a radio frequency (RF) source and a plasma chamber. The RF source is configured to provide at least two non-zero pulse levels, and the matching network includes at least one electronically variable capacitor (EVC) configured to alter its capacitance to provide a match configuration. For each of the pulse levels, at a regular time interval, the method determines a first parameter value for a first parameter related to the plasma chamber or matching network. For each of the pulse levels, the method carries out a separate matching process based on the determined parameter values for the pulse level.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
16.
RF impedance matching circuit and systems and methods incorporating same
In one embodiment, an RF impedance matching network utilizing at least one electronically variable capacitors (EVC) is disclosed. Each EVC includes discrete capacitors operably coupled in parallel, the discrete capacitors including fine capacitors and coarse capacitors. A control circuit determines a parameter related to the plasma chamber and, based on the parameter, determines which of the coarse capacitors and which of the fine capacitors to have switched in to cause an impedance match. The increase of the variable total capacitance of each EVC is achieved by switching in more of the coarse capacitors or more of the fine capacitors than are already switched in without switching out a coarse capacitor that is already switched in.
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
In one embodiment, the present disclosure may be directed to a matching network coupled to an RF source and a plasma chamber and including an electronically variable capacitor (EVC) and a control circuit. The control circuit receives parameter signals and determines corresponding parameter values. For each parameter value, the control circuit determines whether the parameter value is relevant to the matching activity and whether the parameter value is relevant to a second activity of the matching network. The matching network carries out the matching activity based on the parameter values determined to be relevant to the matching activity, and carries out the second activity based on the parameter values determined to be relevant to the second activity.
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
In one embodiment, the present disclosure is directed to a method for impedance matching. The RF source provides at least two repeating, non-zero pulse levels, including a high-priority pulse level and a low-priority pulse level. The matching network comprises at least one EVC, which comprises discrete capacitors configured to switch in and out to provide a plurality of match configurations. Each EVC has a switching limit comprising a predetermined number of switches in or out of the EVC's discrete capacitors in a prior time interval. Upon determining that switching to a new match configuration would cause an EVC to reach the switching limit, the method determines whether the new match configuration is for the low- or high-priority pulse level. If for the low-priority pulse level, the method prevents the switching of the EVC. If for the high-priority pulse level, the method switches the EVC to the new match configuration.
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H03H 7/40 - Automatic matching of load impedance to source impedance
In one embodiment, the present disclosure is directed to a method for impedance matching including a) positioning a matching network between a radio frequency (RF) source and a plasma chamber; b) determining, from among the plurality of match configurations, a new match configuration to be used when there is an expected pulse level change from a first of the pulse levels to a second of the pulse levels; and c) sending a control signal to alter the at least one EVC to provide the new match configuration. The control signal is sent a predetermined time period before a time for the expected pulse level change, the predetermined time period being substantially similar to a time period for the EVC to switch between two match configurations of the plurality of match configurations.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H03H 7/40 - Automatic matching of load impedance to source impedance
In one embodiment, an impedance matching network includes a mechanically variable capacitor (MVC), a second variable capacitor, and a control circuit. The control circuit carries out a first process of determining a second variable capacitor configuration for reducing a reflected power at the RF source output, and altering the second variable capacitor to the second variable capacitor configuration. The control circuit also carries out a second process of determining an RF source frequency, and, upon determining that the RF source frequency is outside, at a minimum, or at a maximum of a predetermined frequency range, determining a new MVC configuration to cause the RF source frequency, according to an RF source frequency tuning process, to be altered to be within or closer to the predetermined frequency range. The determination of the new MVC configuration is based on the RF source frequency and the predetermined frequency range.
H03H 7/40 - Automatic matching of load impedance to source impedance
H01L 21/66 - Testing or measuring during manufacture or treatment
H03H 11/30 - Automatic matching of source impedance to load impedance
C23C 16/52 - Controlling or regulating the coating process
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
In one embodiment, a phase detection circuit includes a current signal input to receive a current signal indicative of a current amplitude of an RF signal and a voltage signal input to receive a voltage signal indicative of a voltage amplitude of the RF signal. A high-pass filter and a low-pass filter are each configured to filter one of (i) the current signal from the current signal input or (ii) the voltage signal from the voltage signal input, wherein the high-pass filter and the low-pass filter collectively cause a substantially 90 degree offset between a phase angle of the current signal and a phase angle of the voltage signal. A phase difference circuit receives the filtered current signal and the filtered voltage signal to determine a phase angle difference between the current signal and the voltage signal.
G01R 25/04 - Arrangements for measuring phase angle between a voltage and a current or between voltages or currents involving adjustment of a phase shifter to produce a predetermined phase difference, e.g. zero difference
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes an electronically variable capacitor (EVC) comprising discrete capacitors, each discrete capacitor having a corresponding switching circuit for switching in and out the discrete capacitor to alter a total capacitance of the EVC. Each switching circuit comprises at least one switching field-effect transistor (FET) operably coupled to the corresponding discrete capacitor to cause the switching in and out of the discrete capacitor. For each switching circuit, when the switching circuit is switched OFF to switch out the corresponding discrete capacitor, the at least one switching FET receives a bias voltage from a bias voltage source to reduce a capacitance variability of the at least one switching FET.
H03H 7/40 - Automatic matching of load impedance to source impedance
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes an electronically variable capacitor (EVC) comprising discrete capacitors, each discrete capacitor having a corresponding switching circuit for switching in and out the discrete capacitor to alter a total capacitance of the EVC. Each switching circuit includes a diode operably coupled to the discrete capacitor to cause the switching in and out of the discrete capacitor, and a filter circuit parallel to the diode, the filter comprising a filtering capacitor in series with an inductor.
In one embodiment, the present disclosure is directed to a method for performing diagnostics on a matching network that utilizes an electronically variable capacitor (EVC). According to the method, all the discrete capacitors of the EVC are switched out. At a first node, a parameter associated with a current flowing between a power supply and one or more of the switches of the discrete capacitors is measured. The method then switches in, one at a time, each discrete capacitor of the EVC. Upon the switching in of each discrete capacitor, the method remeasures the parameter at the first node and determines whether a change to the parameter at the first node is within a predetermined range to determine whether the corresponding switch, driver circuit, or filter of the discrete capacitor most recently switch in has failed.
In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes a mechanically variable capacitor (MVC) and a second variable capacitor. A control circuit is configured to carry out a first process for altering the second variable capacitor and the RF source frequency to reduce reflected power. The control circuit is further configured to carry out a second process of, upon determining that the alteration of the RF source frequency has caused the RF source frequency to be outside, at a minimum, or at a maximum of a predetermined frequency range, determining a new MVC configuration to cause the RF source frequency, according to the first process, to be altered to be within or closer to the predetermined frequency range. The new MVC configuration is based on the RF source frequency and the predetermined frequency range.
In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit is coupled between a plasma chamber and an RF source providing an RF signal having a frequency. The matching circuit includes a first electronically variable capacitor having a first variable capacitance and a second electronically variable capacitor having a second variable capacitance. A control circuit determines a first parameter related to the plasma chamber, and then determines, based on the first parameter, a first capacitance value for the first electronically variable capacitor and a second capacitance value for the second electronically variable capacitor. The control circuit then generates a control signal to alter the first variable capacitance and the second variable capacitance accordingly, causing the RF power reflected back to the RF source to decrease while the frequency of the RF source is not altered.
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes at least one electronically variable capacitor (EVC), each EVC comprising discrete capacitors each having a corresponding switching circuit. Each switching circuit is configured to switch in and out its corresponding discrete capacitor to alter a total capacitance of the EVC. Each switching circuit include a first diode operably coupled to the discrete capacitor, a capacitor coupled in series with the first diode, and a second diode operably coupled to the discrete capacitor. The second diode parallel to the first diode and the capacitor coupled in series.
In one embodiment, the present disclosure is directed to a method of impedance matching where an RF source is providing at least two non-zero pulse levels. For each of the at least two pulse levels, at a regular time interval, a control unit determines a parameter-related value that is based on a parameter related to the load, and repeatedly detects which of the at least two non-zero pulse levels is being provided by the RF source. Upon detecting one of the at least two non-zero pulse levels, for the detected pulse level, the control unit measures the parameter related to the load to determine a measured parameter value, determines the parameter-related value based on the measured parameter value, and alters the at least one EVC to provide the match configuration, the match configuration based on the parameter-related value.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
29.
Impedance matching using independent capacitance and frequency control
In one embodiment, the present disclosure is directed to an RF impedance matching network that includes an RF input coupled to an RF source, an RF output coupled to a plasma chamber, and an electronically variable capacitor (EVC). A first control circuit controls the EVC and is separate and distinct from a second control circuit controlling the RF source. To assist in causing an impedance match between the RF source and the plasma chamber, the first control circuit determines, using a match lookup table with a value based on a detected RF parameter, a new EVC configuration for providing a new EVC capacitance. To further cause the impedance match, the second control circuit alters the variable frequency of the RF source, but operates independently from the first control circuit.
In one embodiment, the present disclosure is directed to an RF impedance matching network that includes an electronically variable capacitor (EVC) and a control circuit. The control circuit is coupled to a sensor configured to detecting an RF parameter. To cause an impedance match between an RF source and a plasma chamber, the control circuit determines, using a match lookup table with a value based on the detected RF parameter, a match combination of a new EVC configuration for providing a new EVC capacitance, and a new source frequency for the RF source. The control circuit then alters the EVC to the new EVC configuration, and alters the variable frequency of the RF source to the new source frequency.
In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. It includes a variable capacitor comprising a plurality of capacitors comprising first coarse capacitors each having a substantially similar first coarse capacitance, second coarse capacitors each having a substantially similar second coarse capacitance, and fine capacitors having different capacitances that increase in value. At least one of the fine capacitors has a capacitance greater than the first coarse capacitance. A control circuit is configured cause a gradual increase in the total capacitance of the variable capacitor by switching in, in a predetermined order, each of the first coarse capacitors, followed by each of the second coarse capacitors, only switching in the fine capacitors whose capacitance is less than a capacitance of a next coarse capacitor of the coarse capacitors predetermined to be switched in next.
In one embodiment, an RF power amplifier includes a first transistor and a second transistor in parallel, wherein a gate of the first transistor and a gate of the second transistor are configured to be driven by an RF source. A third transistor comprising a drain is operably coupled to both a source of the first transistor and a source of the second transistor. A control circuit is operably coupled to a gate of the third transistor and configured to alter a gate-to-source voltage of the third transistor, thereby altering a drain current of each of the first transistor and the second transistor, thereby altering an output power of the RF power amplifier.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H03H 7/40 - Automatic matching of load impedance to source impedance
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H03K 17/691 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
H03K 17/795 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
In one embodiment, an impedance matching network includes at least one electronically variable capacitor (EVC), each EVC comprising discrete capacitors having corresponding switches, the switches configured to switch in and out the discrete capacitors to alter a total capacitance of the EVC. Each switch includes a first terminal operably coupled to the corresponding discrete capacitor, a second terminal, and a switching circuit coupled between the first terminal and the second terminal, the switching circuit comprising a switching transistor. A tuning inductor is coupled parallel to the switching circuit. A value for the tuning inductor enables the tuning inductor to cancel a cumulative parasitic capacitance of the switching circuit.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H03K 17/691 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
H04B 1/18 - Input circuits, e.g. for coupling to an antenna or a transmission line
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H03K 17/12 - Modifications for increasing the maximum permissible switched current
H03K 17/795 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
In one embodiment, a parasitic capacitance compensation circuit for a switch is disclosed that includes a first inductor operably coupled between a first terminal and a second terminal, and a second inductor operably coupled between the first and second terminals and parallel to the first inductor. The second inductor is switched in when a peak voltage on the first and second terminals falls below a first voltage. The first inductance tunes out substantially all of a parasitic capacitance of the switch when the switch is OFF and the peak voltage is above the first voltage. The first and second inductances collectively tune out substantially all of the parasitic capacitance of the switch when the switch is OFF and the peak voltage is below the first voltage.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H03H 7/40 - Automatic matching of load impedance to source impedance
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H03K 17/691 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
H03K 17/795 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
In one embodiment, the present disclosure is directed to a method for matching an impedance. The method can include determining or receiving a reflection parameter value at an RF input or output; stopping the altering of a first capacitance and a second capacitance when the reflection parameter value is at or below a first reflection value; causing a limited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a second reflection value and at or below the third reflection value; and causing an unlimited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a third reflection value.
H03H 7/40 - Automatic matching of load impedance to source impedance
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
36.
RF impedance matching circuit and systems and methods incorporating same
In one embodiment, a semiconductor processing tool includes a plasma chamber and an impedance matching circuit. The matching circuit includes a first electronically variable capacitor having a first variable capacitance, a second electronically variable capacitor having a second variable capacitance, and a control circuit. The control circuit is configured to determine a variable impedance of the plasma chamber, determine a first capacitance value for the first electronically variable capacitor and a second capacitance value for the second electronically variable capacitor, and generate a control signal to alter at least one of the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively. An elapsed time between determining the variable impedance of the plasma chamber to when RF power reflected back to the RF source decreases is less than about 150 μsec.
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
In one embodiment, an impedance matching network is disclosed that includes a first circuit comprising a first variable component providing a first variable capacitance or inductance, and a second circuit comprising a second variable component providing a second variable capacitance or inductance. Each of the first circuit and the second circuit includes plurality of switching circuits configured to provide the first variable capacitance or inductance and the second variable capacitance or inductance. Each of the plurality of switching circuits includes a diode and a driver circuit configured to switch the diode. The driver circuit includes a first switch, a second switch coupled in series with the first switch, and a filter circuit that is coupled at a first end between the first switch and the second switch, and is operably coupled at a second end to the diode.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 17/691 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
H03K 17/795 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
An RF impedance matching network includes an RF input configured to operably couple to an RF source, the RF source having a fixed RF source impedance; an RF output configured to operably couple to a plasma chamber, the plasma chamber having a variable plasma impedance; a series EVC; a shunt EVC; an RF input sensor; and a control circuit configured to: determine an input impedance; determine the plasma impedance; determine a first capacitance value for the series variable capacitance and a second capacitance value for the shunt variable capacitance, the determination of the first capacitance value and the second capacitance value based on the plasma impedance and the RF source impedance; generate a control signal to alter at least one of the series variable capacitance and the shunt variable capacitance to the first capacitance value and the second capacitance value, respectively.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
In one embodiment, a switching circuit includes a first switch coupled to a first switch terminal, the first switch comprising at least one gallium nitride high-electron mobility transistor (GaN HEMT); a second switch coupled in series with the first switch and a second switch terminal, the second switching comprising a GaN HEMT; and at least one power source configured to provide power to the first switch and the second switch; wherein the second switch is configured to drive the first switch ON and OFF.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 17/691 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
H03K 17/795 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
In one embodiment, a radio frequency (RF) impedance matching network includes electronically variable capacitors (EVCs), each EVC including discrete capacitors operably coupled in parallel. The discrete capacitors include fine capacitors each having a capacitance value substantially similar to a fine capacitance value, and coarse capacitors each having a capacitance value substantially similar to a coarse capacitance value. The increase of the variable total capacitance of each EVC is achieved by switching in more of the coarse capacitors or more of the fine capacitors than are already switched in without switching out a coarse capacitor that is already switched in.
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
A control circuit for an electronic switch includes a first power switch receiving a common input signal and a first voltage input and a second power switch receiving the common input signal and a second voltage input. The first and second power switches switchably connect the first voltage input and the second voltage input, respectively, to a common output in response to the common input signal. The second voltage input is opposite in polarity to the first voltage input, and the first power switch and the second power switch are configured to asynchronously connect the first voltage input and the second voltage input, respectively, to the common output in response to the common input signal, the electronic switch being switched according to the first voltage input or the second voltage input being connected to the common output.
H03K 17/08 - Modifications for protecting switching circuit against overcurrent or overvoltage
H03K 17/12 - Modifications for increasing the maximum permissible switched current
H03K 17/081 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
In one embodiment, the invention can be a system for cooling an enclosure enclosing electrical components and configured to prevent air and exhaust from escaping the enclosure. The system can include a heat sink comprising a heat exchanger, and a tube extending into and out of the heat exchanger, the tube configured to transport liquid through the heat exchanger. The system can further include a fan configured to push air heated by electrical components onto the heat exchanger. The heat exchanger can be configured to receive heat from air pushed by the fan, and transfer the received heat to the liquid being transported by the tube through the heat exchanger.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H03H 11/30 - Automatic matching of source impedance to load impedance
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In one embodiment, the invention can be a variable capacitor that includes a plurality of capacitors operably coupled in parallel, and a plurality of switches coupled in series with corresponding capacitors. The plurality of capacitors can include first capacitors increasing in capacitance, and second capacitors having a substantially similar capacitance. Further, for each first capacitor increasing in capacitance, the change to the total capacitance that is provided by the first capacitor when its corresponding switch is closed can increase by a factor of about two.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In one embodiment, a switching circuit includes a first switch comprising one or more transistors operably coupled in series with a first terminal, wherein each of the one or more transistors has a corresponding diode, a drain of each of the one or more transistors being operably coupled to a cathode of the corresponding diode; and a second switch comprising one or more transistors operably coupled in series with a second terminal, wherein each of the one or more transistors has a corresponding diode, a drain of each of the one or more transistors being operably coupled to a cathode of the corresponding diode; wherein a source of the one or more transistors of the first switch is operably coupled to a source of the one or more transistors of the second switch.
H03H 7/40 - Automatic matching of load impedance to source impedance
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
In one embodiment, an RF impedance matching network includes an RF input configured to operably couple to an RF source; an RF output configured to operably couple to a plasma chamber; a first electronically variable capacitor having a first variable capacitance; a second electronically variable capacitor having a second variable capacitance; and a control circuit operably coupled to the first and second electronically variable capacitors. The control circuit is configured to determine the variable impedance of the plasma chamber, determine a first capacitance value for the first variable capacitance and a second capacitance value for the second variable capacitance, and generate a control signal to alter the first and/or second variable capacitance. An elapsed time between determining the variable impedance of the plasma chamber to when RF power reflected back to the RF source decreases is less than about 150 μsec.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In one embodiment, the invention can be an impedance matching network including an input configured to operably couple to a radio frequency (RF) source; an output configured to operably couple to a load; a first variable capacitor; a second variable capacitor; and a third capacitor in series with the second variable capacitor and reducing a voltage on the second variable capacitor.
In one embodiment, an RF generator includes an RF amplifier comprising an RF input, a DC input, and an RF output, the RF amplifier configured to receive at the RF input an RF signal from an RF source; receive at the DC input a DC voltage from a DC source; and provide an output power at the RF output; and a control unit operably coupled to the DC source and the RF source, the control unit configured to receive a power setpoint indicative of a desired output power at the RF output; determine a power dissipation at the RF generator; alter the DC voltage to decrease the power dissipation at the RF generator; and alter the RF signal to enable the output power at the RF output to be substantially equal to the power setpoint.
An RF impedance matching network includes an RF input coupled to an RF source having a fixed impedance and an RF output coupled to a plasma chamber having a variable impedance. A series electronically variable capacitor (EVC) is coupled in series between the RF input and the RF output. A shunt EVC is coupled in parallel between a ground and one of the RF input and the RF output. A control circuit is operatively coupled to the series and shunt EVCs to control first and second variable capacitances, wherein the control circuit is configured to: determine the variable impedance; determine first and second capacitance values for the first and second variable capacitances; and alter at least one of the first and second variable capacitances, wherein an elapsed time between determining the variable impedance and when RF power reflected back to the RF source decreases is less than about 150 μsec.
In one embodiment, an RF generator includes an RF amplifier that includes an RF input, a DC input, and an RF output, the RF amplifier configured to receive at the RF input an RF signal from an RF source; receive at the DC input a DC voltage from a DC source; and provide an output power at the RF output; and a control unit operably coupled to the DC source and the RF source, the control unit configured to receive a power setpoint for the RF output; determine a power dissipation at the RF generator; and alter the DC voltage to a final DC voltage that decreases the power dissipation at the RF generator while enabling the output power at the RF output to be substantially equal to the power setpoint.
An RF impedance matching network includes a transformation circuit coupled to an RF input and configured to provide a transformed impedance that is less than a fixed source impedance; a first shunt circuit in parallel to the RF input, the first shunt circuit including a first shunt variable component providing a first variable capacitance or inductance; and a first virtual ground coupled to the first shunt variable component and a ground; and a second shunt circuit in parallel to the RF input and, the second shunt circuit including a second shunt variable component providing a second variable capacitance or inductance; and a second virtual ground coupled to the second shunt variable component and the ground.
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
G01R 27/28 - Measuring attenuation, gain, phase shift, or derived characteristics of electric four-pole networks, i.e. two-port networksMeasuring transient response
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In one embodiment, the invention can be a switching circuit, the switching circuit including a passive switch coupled to a first switch terminal; a driving switch coupled in series with the passive switch and a second switch terminal, the driving switch configured to turn the passive switch on and off; a power source configured to provide power to the passive switch and the driving switch; and a monitoring circuit configured to receive an indication that a switching circuit voltage exceeds a predetermined amount and, in response, reduce the power provided to the driving switch; or receive an indication that a switching circuit current exceeds a predetermined amount and, in response, reduce the power provided to the driving switch.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
H03H 7/40 - Automatic matching of load impedance to source impedance
A control circuit for a impedance matching circuit having first and second capacitor arrays receives as input one or more RF parameters of the impedance matching circuit, and in response thereto: determines a first match configuration for the first capacitor array and a second match configuration for the second capacitor array to create an impedance match between a fixed RF source impedance and a variable RF load impedance, the first match configuration and the second match configuration being determined from one or more look-up tables and based upon the detected one or more RF parameters; and alters at least one of the first array configuration and the second array configuration to the first match configuration and the second match configuration, respectively, by controlling the on and off states of (a) each discrete capacitor of the first capacitor array and (b) each discrete capacitor of the second capacitor array.
An RF impedance matching network includes a transformation circuit configured to provide a transformed impedance; a first shunt circuit in parallel to the RF input, the first shunt circuit including a first shunt variable capacitance component comprising (a) a plurality of first shunt capacitors coupled in parallel, and (b) a plurality of first shunt switches coupled to the plurality of first shunt capacitors and configured to connect and disconnect each of the plurality of first shunt capacitors to a first virtual ground; and a second shunt variable capacitance component including (a) a plurality of second shunt capacitors coupled in parallel, and (b) a plurality of second shunt switches coupled to the plurality of second shunt capacitors and configured to connect and disconnect each of the plurality of second shunt capacitors to a second virtual ground.
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
G01R 27/28 - Measuring attenuation, gain, phase shift, or derived characteristics of electric four-pole networks, i.e. two-port networksMeasuring transient response
H01L 21/66 - Testing or measuring during manufacture or treatment
A switching circuit includes: an electronic switch comprising one or more diodes for switching a capacitor within an electronic variable capacitor array; a first power switch receiving a common input signal and a first voltage input; and a second power switch receiving the common input signal and a second voltage input, wherein the second voltage input is opposite in polarity to the first voltage input, and the first power switch and the second power switch asynchronously connect the first voltage input and the second voltage input, respectively, to a common output in response to the common input signal, the one or more diodes being switched according to the first voltage input or the second voltage input connected to the common output.
An RF generator and a method of controlling same includes an RF source; a DC source; and an RF amplifier comprising an RF input, a DC input, and an RF output, the RF amplifier configured to receive an RF signal at the RF input, receive a DC voltage at the DC input, and provide an output power at the RF output; a control unit operably coupled to the DC source and RF source, the control unit configured to receive a power setpoint for the RF output, determine a power dissipation at the RF generator, alter the DC voltage, and repeat the alteration of the DC voltage until determining a final DC voltage that decreases the power dissipation at the RF generator while enabling the output power at the RF output to be equal to or greater than the power setpoint.
An system and method for controlling a plasma chamber includes operably coupling an RF generator to the plasma chamber, the RF generator providing an RF signal to a chamber input of the plasma chamber; measuring a parameter at the chamber input; determining a rate of change based on the measured parameter; detecting an excessive rate of change condition comprising the rate of change exceeding a reference rate of change; detecting a repetitive change condition comprising a predetermined number of the excessive rate of change conditions in a predetermined time; upon detection of the repetitive change condition, decreasing a power of the RF signal provided to the chamber input.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/66 - Testing or measuring during manufacture or treatment
A circuit for controlling an RF generator, the circuit including first and second heterodyne stages. The first heterodyne stage receives an input signal, which is based on a characteristic of an RF signal generated by the RF generator, and is configured to: mix the input signal with a first mix signal to generate a first heterodyne signal and to filter the first heterodyne signal through a low pass filter. The second heterodyne stage receives the filtered first heterodyne signal and is configured to: mix the filtered first heterodyne signal with a second mix signal to generate a second heterodyne signal and to filter the second heterodyne signal through a band pass filter. A detection stage converts the filtered second heterodyne signal to a DC signal, and a power control stage receives the DC signal and controls the RF signal in response to the DC signal.
H01J 7/24 - Cooling arrangementsHeating arrangementsMeans for circulating gas or vapour within the discharge space
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
H04B 10/00 - Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
An RF matching network includes a control circuit configured to instruct at least one EVC to alter its variable capacitance, the alteration of the variable capacitance causing the matching network to achieve a preliminary match state, the preliminary match state having an associated first reflection parameter value at an RF source output; and upon the achievement of the preliminary match state, instruct an RF source to alter a variable RF source frequency, the alteration of the variable RF source frequency causing achievement of a final match state, the final match state having an associated second reflection parameter value at the RF source output; wherein the second reflection parameter value is less than the first reflection parameter value.
An RF impedance matching network includes an RF input; an RF output configured to operably couple to a plasma chamber; a series electronically variable capacitor (“series EVC”), the series EVC electrically coupled in series between the RF input and the RF output; and a shunt electronically variable capacitor (“shunt EVC”), the shunt EVC electrically coupled in parallel between a ground and one of the RF input and the RF output; a control circuit to control the series variable capacitance and the shunt variable capacitance, wherein the control circuit is configured to determine the variable plasma impedance of the plasma chamber, determine a series capacitance value and a shunt capacitance value, and generate a control signal to alter at least one of the series variable capacitance and the shunt variable capacitance; wherein the alteration is caused by at least one of a plurality of switching circuits.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
H01J 37/248 - Components associated with high voltage supply
H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A capacitor array may include a bottom electrode, a plurality of top electrodes, at least one dielectric medium and a plurality of switching mechanisms. Each switching mechanism may separably electronically connect two or more top electrodes. The at least one dielectric medium may include a plurality of discrete capacitors each in contact with a top electrode and the bottom electrode.
Methods and systems of detecting one or more characteristics of a load are disclosed. One or more characteristics of a first signal may be detected at the output of a Radio Frequency (RF) power generator. The first signal may have a fundamental frequency. The one or more characteristics of the first signal may be sampled at a sampling frequency to produce a digital sampled signal. The sampling frequency may be determined based on a function of the fundamental frequency of the first signal. One or more characteristics of a load in communication with the RF power generator may then be determined from the digital sampled signal.
G06F 19/00 - Digital computing or data processing equipment or methods, specially adapted for specific applications (specially adapted for specific functions G06F 17/00;data processing systems or methods specially adapted for administrative, commercial, financial, managerial, supervisory or forecasting purposes G06Q;healthcare informatics G16H)
patents