An apparatus is disclosed for a surface-acoustic-wave device having an Aluminum Nitride substrate layer. In one aspect, a surface acoustic wave (SAW) includes a substrate layer comprising an Aluminum Nitride (AlN) substrate layer, an electrode structure comprising an interdigital transducer, and a piezoelectric layer disposed between the electrode structure and the substrate layer. In some aspects, the piezoelectric layer is Lithium Niobate or Lithium Tantalate.
An apparatus is disclosed for a surface-acoustic-wave device having an Aluminum Nitride substrate layer. In one aspect, a surface acoustic wave (SAW) includes a substrate layer comprising an Aluminum Nitride (AlN) substrate layer, an electrode structure comprising an interdigital transducer, and a piezoelectric layer disposed between the electrode structure and the substrate layer. In some aspects, the piezoelectric layer is Lithium Niobate or Lithium Tantalate.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H03H 9/145 - Driving means, e.g. electrodes, coils for networks using surface acoustic waves
H03H 9/25 - Constructional features of resonators using surface acoustic waves
A fullcover package solution in combination with copper pillars or solder bumps and acoustic cavities is proposed to provide maximum usable design area compared to current thin film acoustic wafer level packages. Manufacturing can be done in a self-aligned interconnection process.
An apparatus is provided for coupling prevention with electroacoustic resonators using scattering elements. In one example, an apparatus comprises a piezoelectric layer comprising a shared surface, a first resonator comprising a first interdigital transducer disposed over the shared surface of the piezoelectric layer, a second resonator comprising a second interdigital transducer disposed over the shared surface of the piezoelectric layer, and a plurality of scattering elements positioned between the first resonator and the second resonator.
An apparatus is provided for coupling prevention with electroacoustic resonators using scattering elements. In one example, an apparatus comprises a piezoelectric layer comprising a shared surface, a first resonator comprising a first interdigital transducer disposed over the shared surface of the piezoelectric layer, a second resonator comprising a second interdigital transducer disposed over the shared surface of the piezoelectric layer, and a plurality of scattering elements (610G) positioned between the first resonator and the second resonator.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
An apparatus is disclosed for implementing a microacoustic filter with an acoustically-decoupled electrode structure. In an example aspect, the apparatus includes the microacoustic filter with a piezoelectric layer (126), a substrate (316), and an electrode structure (308-1, 308-2, 308-3, 308-4). The piezoelectric layer has a crystalline structure operative to laterally excite a plate mode. The electrode structure is positioned between the piezoelectric layer and the substrate and has a has a first surface (504-1) that faces the piezoelectric layer. The microacoustic filter also includes at least one spacer (136-1, 136-2) extending from the substrate past a plane (508) defined by the first surface of the electrode structure and towards the piezoelectric layer to form a cavity (318) between the electrode structure and the piezoelectric layer.
BAW devices include a piezoelectric layer with a first electrode layer on one face and a second electrode layer on the opposite face. The piezoelectric layer and electrode layers determine a coupling efficiency of the BAW devices, which is a measure of the acoustic response of the piezoelectric layer to an input signal. In a BAW device, a first side of the first electrode layer comprises a first material adjacent to a first face of the piezoelectric layer, and a second side of the first electrode layer, opposite to the first face of the piezoelectric layer, comprises a second material, where the first material and the second material have different acoustic impedances. An electrode layer with an acoustic impedance gradient increases the coupling efficiency of the BAW devices.
BAW devices include a piezoelectric layer with a first electrode layer on one face and a second electrode layer on the opposite face. The piezoelectric layer and electrode layers determine a coupling efficiency of the BAW devices, which is a measure of the acoustic response of the piezoelectric layer to an input signal. In a BAW device, a first side of the first electrode layer comprises a first material adjacent to a first face of the piezoelectric layer, and a second side of the first electrode layer, opposite to the first face of the piezoelectric layer, comprises a second material, where the first material and the second material have different acoustic impedances. An electrode layer with an acoustic impedance gradient increases the coupling efficiency of the BAW devices.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
9.
Microacoustic Filter with an Acoustically-Decoupled Electrode Structure
An apparatus is disclosed for implementing a microacoustic filter with an acoustically-decoupled electrode structure. In an example aspect, the apparatus includes the microacoustic filter with a piezoelectric layer, a substrate, and an electrode structure. The piezoelectric layer has a crystalline structure operative to laterally excite a plate mode. The electrode structure is positioned between the piezoelectric layer and the substrate and has a has a first surface that faces the piezoelectric layer. The microacoustic filter also includes at least one spacer extending from the substrate past a plane defined by the first surface of the electrode structure and towards the piezoelectric layer to form a cavity between the electrode structure and the piezoelectric layer.
H03H 9/205 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
10.
DIE PACKAGE WITH GUARD STRUCTURE TO REDUCE OR PREVENT MATERIAL SEEPAGE INTO AIR CAVITY, AND RELATED FABRICATION METHODS
Bare die package with guard to reduce or prevent material seepage into an air cavity, and related fabrication methods. In exemplary aspects, to avoid or reduce material (e.g., an encapsulation material such as a mold material and/or a coating material) from entering or seeping into the air cavity in the active filter region of a filter, the die package includes a guard structure. The guard structure is a structure on or adjacent to the die operable to be used in a filter that redirects or reduces material from entering the gap between the die and the substrate. The guard structure reduces or prevents the material entering the air cavity of the die so as to avoid such material affecting the acoustic performance of the air cavity of the filter.
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
11.
NEAR SYNCHRONOUS DUAL MODE SURFACE ACOUSTIC WAVE RESONATORS
An apparatus is disclosed for a surface acoustic wave (SAW) device a dual mode (DMS) resonator configuration with near synchronous operation. One aspect comprises a piezoelectric material, a first reflector disposed over the piezoelectric material, a second reflector disposed over the piezoelectric material, and a plurality of interdigitated transducers (IDTs) disposed over the piezoelectric material and positioned between the first reflector and the second reflector, wherein a magnitude of a pitch of electrode fingers in the first reflector and the second reflector is higher than a pitch of electrode fingers in the plurality of interdigitated transducers, wherein a variation of the pitch of the electrode fingers in the plurality of interdigitated transducers is less than 3% across the plurality of interdigitated transducers.
Bare die package with guard to reduce or prevent material seepage into an air cavity, and related fabrication methods. In exemplary aspects, to avoid or reduce material (e.g., an encapsulation material such as a mold material and/or a coating material) from entering or seeping into the air cavity in the active filter region of a filter, the die package includes a guard structure. The guard structure is a structure on or adjacent to the die operable to be used in a filter that redirects or reduces material from entering the gap between the die and the substrate. The guard structure reduces or prevents the material entering the air cavity of the die so as to avoid such material affecting the acoustic performance of the air cavity of the filter.
An apparatus is disclosed for a surface acoustic wave (SAW) device a dual mode (DMS) resonator configuration with near synchronous operation. One aspect comprises a piezoelectric material, a first reflector disposed over the piezoelectric material, a second reflector disposed over the piezoelectric material, and a plurality of interdigitated transducers (IDTs) disposed over the piezoelectric material and positioned between the first reflector and the second reflector, wherein a magnitude of a pitch of electrode fingers in the first reflector and the second reflector is higher than a pitch of electrode fingers in the plurality of interdigitated transducers, wherein a variation of the pitch of the electrode fingers in the plurality of interdigitated transducers is less than 3% across the plurality of interdigitated transducers.
At least three acoustic filters circuits FC are arranged on a single chip CH. At least two of them are electrically connected already on the chip for multiplexing. This reduces space consumption and leads to smaller device size.
An electroacoustic resonator comprises a substrate with a piezoelectric material and an interdigital electrode structure on a top side of the substrate. The electrode structure comprises a first electrode and a second electrode each with a busbar and a plurality of fingers. The region of the top side between the two busbars is subdivided into two barrier regions, two trap regions and one track region, the trap regions being located between the two barrier regions and the track region being located between the two trap regions. At least some fingers each comprise one barrier portion, two trap portions and one track portion. The barrier portion is associated with the barrier region closest to the busbar assigned to the finger, the trap portions are each associated with one of the trap regions and the track portion is associated with the track region.
An apparatus is disclosed for a multiplexing filter circuit (MFC). In example aspects, the MFC includes multiple filters, with each respective filter of the multiple filters having a respective distinct passband that corresponds to a frequency band. The multiple filters include a first group of filters and a second group of filters that is different from the first. The MFC includes a first plurality of nodes coupled between the multiple filters and an antenna port, with the first plurality of nodes including a first node coupled between the first group of filters and the antenna port. The MFC includes a second plurality of nodes coupled between the multiple filters and processing circuitry, with the second plurality of nodes including a first node coupled between the second group of filters and the processing circuitry. The first and second groups of filters each include a filter of the multiple filters in common.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device with one or more intermediate layers for reduced self-heating and methods for fabricating such a SAW device. One example SAW device generally includes a piezoelectric layer and an interdigital transducer (IDT) disposed above the piezoelectric layer. The IDT generally includes a first electrode having a first busbar and a first plurality of fingers. The first electrode generally includes a first copper layer disposed above the piezoelectric layer, a first intermediate layer disposed above the first copper layer, the first intermediate layer comprising a different material than the first copper layer, and a second copper layer disposed above the first intermediate layer.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
An apparatus is disclosed for a multiplexing filter circuit (MFC). In example aspects, the MFC includes multiple filters, with each respective filter of the multiple filters having a respective distinct passband that corresponds to a frequency band. The multiple filters include a first group of filters and a second group of filters that is different from the first. The MFC includes a first plurality of nodes coupled between the multiple filters and an antenna port, with the first plurality of nodes including a first node coupled between the first group of filters and the antenna port. The MFC includes a second plurality of nodes coupled between the multiple filters and processing circuitry, with the second plurality of nodes including a first node coupled between the second group of filters and the processing circuitry. The first and second groups of filters each include a filter of the multiple filters in common.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
An RF filter device that provides small spatial dimensions and good electric performance is provided. The filter device comprises a resonator structure and a further electric circuit. An acoustic mirror is arranged between the active structure and the further electric circuit.
A method for forming an aluminum nitride layer (310, 320) comprises the provision of a substrate (100) and the forming of a patterned metal nitride layer (110). A bottom electrode metal layer (210) is formed on the exposed portions (101) of the substrate. An aluminum nitride layer portion (320) grown above the exposed portion (101) of the substrate (100) exhibits piezoelectric properties. An aluminum nitride layer portion (310) grown above the patterned metal nitride layer (110) exhibits no piezoelectric properties (310). Both aluminum nitride layer portions (320, 310) are grown simultaneously.
H03H 3/04 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/08 - Holders with means for regulating temperature
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
An integrated device comprising a die substrate; a die interconnection portion coupled to the die substrate; and a metallization interconnect coupled to the die interconnection portion. The metallization interconnect comprises an adhesion metal layer, a first metal layer coupled to the adhesion metal layer; a second metal layer coupled to the first metal layer, and a third metal layer coupled to the second metal layer.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
An integrated device comprising a die substrate; a die interconnection portion coupled to the die substrate; and a metallization interconnect coupled to the die interconnection portion. The metallization interconnect comprises an adhesion metal layer; a first metal layer coupled to the adhesion metal layer; a second metal layer coupled to the first metal layer; and a third metal layer coupled to the second metal layer.
An apparatus for filtering is disclosed that implements an electrode structure with corrosion resistance and power durability. In an example aspect, the apparatus includes an acoustic filter with a piezoelectric layer and the electrode structure. The electrode structure is formed by a metal layer comprising copper and silicon and by an adhesion layer. The adhesion layer is deposited between the metal layer and the piezoelectric layer.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
An apparatus for filtering is disclosed that implements an electrode structure with corrosion resistance and power durability. In an example aspect, the apparatus includes an acoustic filter with a piezoelectric layer and the electrode structure. The electrode structure is formed by a metal layer comprising a copper layer (604) and a silicon layer (510) and by an adhesion layer (504). The adhesion layer is deposited between the metal layer and the piezoelectric layer.
Aspects herein include minimizing hot spots on a filter chip by creating thermal radiators using mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation provides better heat dissipation and heat sinking. Shunt lines of a ladder type arrangement of SAW resonators comprise a broadened section. Resonators that are subsequent to each other in the series signal line are connected via a common busbar extending over a length of subsequent series resonators. A lateral extension of the common busbars represents a first section of a respective shunt line. A first shunt line section between a node and the parallel resonator of a shunt line comprises a section that is broader than the common busbar, the broadened section extending over the width of the parallel resonator. The first reflector of the parallel resonator that faces the laterally adjacent series resonator is formed from the broadened section.
11122221212 11, and a metallization structure disposed on a top surface of the second piezoelectric layer, the metallization structure comprising at least one interdigital transducer.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/04 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
Disclosed are polarization-inverted higher-order plate-mode resonators and methods for making the same. In an aspect, a plate-mode resonator includes a first piezoelectric layer having a first crystal orientation specified by a first set of Euler angles α1, β1, and γ1, a dielectric layer disposed on a top surface of the first piezoelectric layer, a second piezoelectric layer, disposed on a top surface of the dielectric layer, having a second crystal orientation specified by a second set of Euler angles α2, β2, and γ2, wherein az is approximately equal to α1, wherein a difference between β2 and β1 is approximately 180 degrees, and wherein γ2 is approximately equal to γ1, and a metallization structure disposed on a top surface of the second piezoelectric layer, the metallization structure comprising at least one interdigital transducer.
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
An apparatus is disclosed for an acoustic resonator cascade. In example aspects, the apparatus includes at least one filter circuit. The at least one filter circuit includes a substrate, a first resonator cascade, and a second resonator cascade. The substrate has a surface including a first axis and a second axis. The first resonator cascade has multiple acoustic resonators and is disposed on the surface of the substrate in a first column along the first axis. The second resonator cascade has multiple acoustic resonators and is disposed on the surface of the substrate in a second column along the first axis. A first gap extends along the second axis between the first resonator cascade and the second resonator cascade. A second gap extends along the second axis between the first resonator cascade and the second resonator cascade. The first gap is different from the second gap.
An apparatus is disclosed for an acoustic resonator cascade. In example aspects, the apparatus includes at least one filter circuit. The at least one filter circuit includes a substrate, a first resonator cascade, and a second resonator cascade. The substrate has a surface including a first axis and a second axis. The first resonator cascade has multiple acoustic resonators and is disposed on the surface of the substrate in a first column along the first axis. The second resonator cascade has multiple acoustic resonators and is disposed on the surface of the substrate in a second column along the first axis. A first gap extends along the second axis between the first resonator cascade and the second resonator cascade. A second gap extends along the second axis between the first resonator cascade and the second resonator cascade. The first gap is different from the second gap.
An acoustic device includes a piezoelectric layer between a first, bottom electrode and a second, top electrode, and an acoustic mirror optimized for reflecting longitudinal waves and shear waves at a target operating frequency. The acoustic mirror includes lower acoustic impedance layers and at least one higher acoustic impedance layer. In an example, layers of the acoustic mirror alternate between lower impedance and higher impedance, with a first lower acoustic impedance layer adjacent to the bottom electrode, and a first higher acoustic impedance layer having a greater thickness than a second higher acoustic impedance layer. In another example, the acoustic mirror has a higher acoustic impedance layer with a thickness corresponding to at least half of a wavelength of the target operating frequency in the higher acoustic impedance layer. An acoustic device with an acoustic mirror optimized for both longitudinal waves and shear waves reduces energy losses for increased efficiency.
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
31.
ACOUSTIC DEVICES INCLUDING ACOUSTIC MIRRORS CO-OPTIMIZED FOR LONGITUDINAL AND SHEAR WAVE REFLECTION, AND RELATED METHOD OF FABRICATION
An acoustic device includes a piezoelectric layer between a first, bottom electrode and a second, top electrode, and an acoustic mirror optimized for reflecting longitudinal waves and shear waves at a target operating frequency. The acoustic mirror includes lower acoustic impedance layers and at least one higher acoustic impedance layer. In an example, layers of the acoustic mirror alternate between lower impedance and higher impedance, with a first lower acoustic impedance layer adjacent to the bottom electrode, and a first higher acoustic impedance layer having a greater thickness than a second higher acoustic impedance layer. In another example, the acoustic mirror has a higher acoustic impedance layer with a thickness corresponding to at least half of a wavelength of the target operating frequency in the higher acoustic impedance layer. An acoustic device with an acoustic mirror optimized for both longitudinal waves and shear waves reduces energy losses for increased efficiency.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
32.
FILTER WITH MULTIPLE OUTPUTS OR INPUTS TO IMPLEMENT MULTIPLE FILTER FREQUENCY RESPONSES
A filter is provided that includes a set of cascaded resonator stages coupled between a filter input and a first filter output, wherein the filter includes a second filter output coupled to an output of a first or an intermediate one of the set of cascaded resonator stages. Another filter includes a set of cascaded resonator stages coupled between a first filter input and a filter output, wherein the filter includes a second filter input coupled to an input of an intermediate or a last one of the set of cascaded resonator stages. Both filters are configured to apply a first filter frequency response to a first signal propagating via the set of cascaded resonator stages, and apply a second filter frequency response to a second signal propagating via a subset of one or more of the set of cascaded resonator stages.
Aspects are provided for radio frequency (RF) front end modules. The radio frequency front end modules comprises a common antenna node, an antenna switch matrix (ASM) comprising an ASM first signal terminal and at least two ASM second signal terminals, the ASM first signal terminal being coupled with the common antenna node; at least two RF micro acoustic filters coupleable to the common antenna node via the ASM. At least a first RF micro acoustic filter of the at least two RF micro acoustic filters comprises a micro acoustic pre-filter comprising a pre-filter first signal terminal and a pre-filter second signal terminal, the pre-filter first signal terminal coupled with the ASM; and a micro acoustic main-filter comprising a main-filter first signal terminal and a main-filter second signal terminal. The micro acoustic pre-filter and the micro acoustic main-filter being separated by a signal line coupling the pre-filter second signal terminal to the main-filter first signal terminal, the micro acoustic pre-filter being on a different die than the micro acoustic main-filter and being coupled by the signal line
H04B 1/38 - Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
Aspects are provided for radio frequency (RF) front end modules. The radio frequency front end modules comprises a common antenna node, an antenna switch matrix (ASM) comprising an ASM first signal terminal and at least two ASM second signal terminals, the ASM first signal terminal being coupled with the common antenna node; at least two RF micro acoustic filters coupleable to the common antenna node via the ASM. At least a first RF micro acoustic filter of the at least two RF micro acoustic filters comprises a micro acoustic pre-filter comprising a pre-filter first signal terminal and a pre-filter second signal terminal, the pre-filter first signal terminal coupled with the ASM; and a micro acoustic main-filter comprising a main-filter first signal terminal and a main-filter second signal terminal. The micro acoustic pre-filter and the micro acoustic main-filter being separated by a signal line coupling the pre-filter second signal terminal to the main-filter first signal terminal, the micro acoustic pre-filter being on a different die than the micro acoustic main-filter and being coupled by the signal line.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
A radio frequency multiplexer (210, 220, 230) comprises send and receive circuits each including a RF filter circuit (211, 212, 221, 227, 231, . . . , 234). The send and receive circuits are coupled to an antenna port (225, 245) and corresponding send and receive ports (221, 222). A portion of the send circuit and a portion of the receive circuit are disposed on a single die (213, 226, 250). The layer stacks of the resonators of the send and receive circuits disposed on the single die can be optimized for the required functionality.
A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. A method of manufacturing the device comprises a bonding of a piezoelectric wafer to a carrier wafer and splitting a portion of the piezoelectric wafer by an ion-cut technique. Different thicknesses of the piezoelectric layer in the active area and the surrounding area are achieved by implanting ions at different depths.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H10N 30/072 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing filters with electroacoustic vertical coupling. One aspect is a filter comprising a piezoelectric substrate having a first piezoelectric surface and a second piezoelectric surface opposite the first piezoelectric surface. The filter further comprises a first electroacoustic resonator comprising a first interdigital transducer (IDT) disposed on or over the first piezoelectric surface of the piezoelectric substrate and a second electroacoustic resonator comprising a second IDT disposed on or over the second piezoelectric surface of the piezoelectric substrate. The second electroacoustic resonator is electrically coupled to the first electroacoustic resonator in series or in parallel.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing filters with electroacoustic vertical coupling. One aspect is a filter comprising a piezoelectric substrate having a first piezoelectric surface and a second piezoelectric surface opposite the first piezoelectric surface. The filter further comprises a first electroacoustic resonator comprising a first interdigital transducer (IDT) disposed on or over the first piezoelectric surface of the piezoelectric substrate and a second electroacoustic resonator comprising a second IDT disposed on or over the second piezoelectric surface of the piezoelectric substrate. The second electroacoustic resonator is electrically coupled to the first electroacoustic resonator in series or in parallel.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
An apparatus for filtering is disclosed that implements a double-mode surface- acoustic-wave filter having a transition region with a partly uniform geometric property. In an example aspect, the double-mode surface-acoustic-wave filter includes at least one interdigital transducer with multiple fingers. The multiple fingers include a first set of fingers having a geometric property and a second set of fingers. The second set of fingers is positioned adjacent to the first set of fingers and is associated with an outer edge of the at least one interdigital transducer. The geometric property across a subset of the second set of fingers is substantially uniform. A value of the geometric property across the subset of the second set of fingers is different than a value of the geometric property across the first set of fingers.
An apparatus for filtering is disclosed that implements a double-mode surface-acoustic-wave filter having a transition region with a partly uniform geometric property. In an example aspect, the double-mode surface-acoustic-wave filter includes at least one interdigital transducer with multiple fingers. The multiple fingers include a first set of fingers having a geometric property and a second set of fingers. The second set of fingers is positioned adjacent to the first set of fingers and is associated with an outer edge of the at least one interdigital transducer. The geometric property across a subset of the second set of fingers is substantially uniform. A value of the geometric property across the subset of the second set of fingers is different than a value of the geometric property across the first set of fingers.
H03H 9/145 - Driving means, e.g. electrodes, coils for networks using surface acoustic waves
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
An improved electro acoustic RF filter (FC) is provided . The RF filter comprises an electro acoustic resonator (EAR) connected between an input port and an output port, an impedance element and a damping and/or dissipation element (DE) in mechanical contact to the impedance element. The damping and/or dissipation element is provided and configured to remove acoustic energy from the impedance element which has a similar construction as the resonator on the same substrate. With such a construction an acoustically inactive impedance element (AIIE) is obtained.
A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
An electro acoustic resonator is provided. The resonator has a gap short structure (GSS) to electrically short at least an area of the transversal gap to suppress transversal gap mode excitations. The gap short structure may be provided by a conductive stripe in the gap and parallel to or inclined with respect to the bus bar (BB) shorting adjacent IDT fingers. Additional connectors between the stripe and the bus bar may be provided. The connectors may have different pitch or metallization ratio with respect to the ID fingers. The connectors may be offset from the position of the fingers and my be inclined with respect to the bus bars. Multiple parallel stripes in the gap may provide a transversal reflector. By using a gap short structure a further improved transversal mode suppression of piston mode designs can be achieved.
H03H 9/25 - Constructional features of resonators using surface acoustic waves
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
A bulk acoustic wave (BAW) device comprises a layer stack including first and second electrodes, a first piezoelectric layer between the electrodes, and a second piezoelectric layer between the first piezoelectric layer and the second electrode. A polarization of a crystal structure of the second piezoelectric layer is opposite to a polarization of a crystal structure of the first piezoelectric layer to achieve higher order resonant frequencies in the BAW device by means other than merely thinning layers in the layer stack. In some examples, the BAW device is a two-terminal device and does not include a metal layer configured to be a third electrode. In some examples, the BAW device includes at least one intermediate layer between the first and second piezoelectric layers, and a total combined thickness of the at least one intermediate layer is less than 4% of a total thickness of the layer stack.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators. One aspect is a device including first and second busbars, and electrode fingers coupled between the busbars, with electrode fingers extending different distances toward an opposite busbar such that a second end of each of the electrode fingers collectively form wave shapes. The device further includes pluralities of gap reflectors positioned between the wave shapes and a nearest busbar.
A bulk acoustic wave, BAW, device comprises a piezoelectric layer (330) disposed between a first electrode layer (104A) and a sandwich electrode (106A). The sandwich electrode includes a first layer (114) of a first material having a first acoustic impedance and a second layer (116) of a second material having a second acoustic impedance that is less than the first acoustic impedance of the first layer. The second layer (116) of the sandwich electrode having the lower acoustic impedance is disposed between the first layer (114) and the piezoelectric layer (330). The sandwich electrode (106A) combined with the piezoelectric layer (330) and first electrode (104A) can cause the BAW device to resonate at a frequency whose wavelength corresponds to an acoustic cavity length of the BAW device, depending on an acoustic mirror (124A,126A) included on one side of the BAW device. The sandwich electrode has an acoustic thickness of 1/2 the resonant frequency wavelength. If both electrodes are sandwich electrodes, the acoustic cavity length is about 1.5 times of the resonant frequency wavelength.
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/04 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
A bulk acoustic wave, BAW, device comprises a layer stack (102) including first electrode (104A) and a second electrode (104B), a first piezoelectric layer (106A) between the electrodes, and a second piezoelectric layer (106B) between the first piezoelectric layer and the second electrode. A polarization (P2) of a crystal structure of the second piezoelectric layer is opposite to a polarization (Pl) of a crystal structure of the first piezoelectric layer to achieve higher order resonant frequencies in the BAW device by means other than merely thinning layers in the layer stack. In some examples, the BAW device is a two-terminal device and does not include a metal layer configured to be a third electrode. In some examples, the BAW device includes at least one intermediate layer (120, 122, 124) between the first and second piezoelectric layers, and a total combined thickness of the at least one intermediate layer is less than 4% of a total thickness of the layer stack.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
A bulk acoustic wave (BAW) device comprises a piezoelectric layer disposed between a first electrode layer and a sandwich electrode. The sandwich electrode includes a first layer of a first material having a first acoustic impedance and a second layer of a second material having a second acoustic impedance that is less than the first acoustic impedance of the first layer. The second layer of the sandwich electrode having the lower acoustic impedance is disposed between the first layer and the piezoelectric layer. The sandwich electrode combined with the piezoelectric layer and first electrode can cause the BAW device to resonate at a frequency whose wavelength corresponds to an acoustic cavity length of the BAW device, depending on an acoustic mirror included on one side of the BAW device. In one example, the acoustic cavity length is about 1.5 times of the resonant frequency wavelength.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators. One aspect is a device including first and second busbars, and electrode fingers coupled between the busbars, with electrode fingers extending different distances toward an opposite busbar such that a second end of each of the electrode fingers collectively form wave shapes. The device further includes pluralities of gap reflectors positioned between the wave shapes and a nearest busbar.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H03H 9/25 - Constructional features of resonators using surface acoustic waves
An apparatus is disclosed for implementing a microacoustic filter with a cavity stack. In an example aspect, the apparatus includes a microacoustic filter with an electrode structure (310), a cavity stack (126), a buffer layer, (128) and a piezoelectric layer (130). The cavity stack comprises a conductive layer (312), a substrate layer (316), and at least two pillars (314) extending past a plane defined by a surface of the substrate layer and towards the conductive layer to form a cavity (318) between the substrate layer and the conductive layer. The buffer layer (128) is disposed between the conductive layer (312) of the cavity stack and the electrode (310) structure. The piezoelectric layer (130) is disposed between the buffer layer (128) and the electrode structure (310).
An apparatus is disclosed for implementing a microacoustic filter with a cavity stack. In an example aspect, the apparatus includes a microacoustic filter with an electrode structure, a cavity stack, a buffer layer, and a piezoelectric layer. The cavity stack comprises a conductive layer, a substrate layer, and at least two pillars extending past a plane defined by a surface of the substrate layer and towards the conductive layer to form a cavity between the substrate layer and the conductive layer. The buffer layer is disposed between the conductive layer of the cavity stack and the electrode structure. The piezoelectric layer is disposed between the buffer layer and the electrode structure.
Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing bulk wave suppression in a stacked electroacoustic device. One aspect includes a first substrate (420) comprising a first surface and a second surface, where the second surface is opposite the first surface, a first AW resonator circuit (450) positioned on the first surface of the first substrate, a plurality of elements (440,446,448) including a first element (446), where the plurality of elements are positioned on the second surface of the first substrate, and where the first element (446) is aligned with the first AW resonator circuit (450), and a second substrate (430) comprising a first surface and a second surface, where the plurality of elements (440,446,448) are positioned on the first surface of the second substrate, and where the plurality of elements create a cavity (421) between the first substrate and the second substrate. A cap substrate (410) having a first surface and a second surface; and a second plurality of elements (440,442,444) positioned on the first surface of the first substrate (420) and the second surface of the cap substrate (410) to create a second cavity, wherein the second cavity is positioned between the first substrate (420) and the cap substrate (410). The pluralities of elements (440,442,446,444,448) may be formed of metal or polymer material. A uniform polymer layer (458) at the bottom surface of the first substrate (420) can provide increased dampening to weaken the reflected bulk wave (462).
Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing bulk wave suppression in a stacked electroacoustic device. One aspect includes a first substrate comprising a first surface and a second surface, where the second surface is opposite the first surface, a first AW resonator circuit positioned on the first surface of the first substrate, a plurality of elements including a first element, where the plurality of elements are positioned on the second surface of the first substrate, and where the first element is aligned with the first AW resonator circuit, and a second substrate comprising a first surface and a second surface, where the plurality of elements are positioned on the first surface of the second substrate, and where the plurality of elements create a cavity between the first substrate and the second substrate.
A bulk acoustic wave (BAW) device with resonance-tuned layer stack is disclosed. The BAW device includes two acoustic resonators with top electrodes in different regions on a top side of a piezoelectric layer. The BAW device includes an acoustic mirror on a bottom side of the piezoelectric layer and a bottom electrode between the acoustic mirror and the piezoelectric layer. The piezoelectric layer includes a recess in a second region on the bottom side of the piezoelectric layer. The bottom electrode is disposed in the recess on the bottom side of the piezoelectric layer. A distance between a first top electrode in a first region and the bottom electrode may be greater than a distance between a second top electrode in the second region and the bottom electrode.
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
An apparatus for filtering is disclosed that implements twin double-mode surface-acoustic-wave filters with opposite polarities and a geometric offset. The apparatus includes a first double-mode surface-acoustic-wave structure comprising an electrode structure having a first quantity of fingers and a first pitch. The first double-mode surface-acoustic-wave structure has a first polarity. The apparatus also includes a second double-mode surface-acoustic-wave structure coupled to the first double-mode surface-acoustic-wave structure with a second polarity that is opposite the first polarity. The second double-mode surface-acoustic-wave structure comprises an electrode structure having a second quantity of fingers and a second pitch. The second quantity of fingers is equal to the first quantity of fingers. The second pitch differs from the first pitch by a pitch offset.
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
56.
ACOUSTIC WAVE DEVICES WITH RESONANCE-TUNED LAYER STACK AND METHOD OF MANUFACTURE
TOPBOTBOTBOTBOT) of the piezoelectric layer (110). A distance (D1) between a first top electrode (104(A)) in a first region (108(A)) and the bottom electrode (112) may be greater than a distance (D2) between a second top electrode (104(B)) in the second region (108(B)) and the bottom electrode (112).
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 3/04 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
57.
TWIN DOUBLE-MODE SURFACE-ACOUSTIC-WAVE (DMS) FILTERS WITH OPPOSITE POLARITIES AND A GEOMETRIC OFFSET
An apparatus for filtering is disclosed that implements twin double-mode surface-acoustic-wave filters with opposite polarities and a geometric offset. The apparatus includes a first double-mode surface-acoustic-wave structure (126-1) comprising an electrode structure (308-1, 308-2, 308-3) having a first quantity of fingers and a first pitch (320-1). The first double-mode surface-acoustic-wave structure has a first polarity (128-1). The apparatus also includes a second double-mode surface-acoustic-wave structure (126-2) coupled to the first double-mode surface-acoustic-wave structure with a second polarity (128-2) that is opposite the first polarity. The second double-mode surface-acoustic-wave structure comprises an electrode structure (308-1, 308-2, 308-3) having a second quantity of fingers and a second pitch (320-2). The second quantity of fingers is equal to the first quantity of fingers. The second pitch differs from the first pitch by a pitch offset. In addition to pitch the two structures may also differ in chirp (322-1, 322-2).
An apparatus is disclosed for implementing a surface-acoustic-wave, SAW, filter with dielectric material (134) disposed in a piezoelectric layer (132). In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer (132), an electrode structure (306-1, 306-2), and dielectric material (134). The piezoelectric layer has at least one channel (134). The dielectric material is disposed in the at least one channel of the piezoelectric layer and is at least partially covered by the electrode structure.
An apparatus is disclosed for a surface-acoustic-wave filter that suppresses intermodulation distortion. In an example aspect, the apparatus includes a surface-acoustic-wave filter including an electrode structure and at least one layer of quartz material with a thickness having a range approximately from 100 to 300 micrometers. The apparatus also includes at least one layer of lithium niobate (LiNbO3) material disposed between the electrode structure and the quartz material. A thickness of the lithium niobate material has a range approximately from 0.2 to 0.4 micrometers.
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
60.
Surface-Acoustic-Wave (SAW) Filter with Dielectric Material Disposed in a Piezoelectric Layer
An apparatus is disclosed for implementing a surface-acoustic-wave (SAW) filter with dielectric material disposed in a piezoelectric layer. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer, an electrode structure, and dielectric material. The piezoelectric layer has at least one channel. The dielectric material is disposed in the at least one channel of the piezoelectric layer and is at least partially covered by the electrode structure.
An apparatus is disclosed for a surface-acoustic-wave filter that suppresses intermodulation distortion. In an example aspect, the apparatus includes a surface-acoustic-wave filter including an electrode structure (302) and at least one layer of quartz material (314) with a thickness having a range approximately from 100 to 300 micrometers. The apparatus also includes at least one layer of lithium niobate, LiNbO3, material (310) disposed between the electrode structure and the quartz material. A thickness of the lithium niobate material has a range approximately from 0.2 to 0.4 micrometers.
An apparatus is disclosed for partially suspending a piezoelectric layer using a dielectric. In an example aspect, the apparatus includes a microacoustic filter with a substrate layer (126), a piezoelectric layer (128), an electrode structure (310) that is in contact with the piezoelectric layer, and a dielectric (130). The electrode structure includes multiple fingers arranged across a plane having a first axis (406) that is perpendicular to the multiple fingers and a second axis (408) that is parallel to the multiple fingers. The dielectric is configured to separate the piezoelectric layer from the substrate layer and define a cavity (316) between the piezoelectric layer and the substrate layer. The dielectric is also configured to support the piezoelectric layer across at least three points (314) along the first axis.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
63.
Partially Suspending a Piezoelectric Layer Using a Dielectric
An apparatus is disclosed for partially suspending a piezoelectric layer using a dielectric. In an example aspect, the apparatus includes a microacoustic filter with a substrate layer, a piezoelectric layer, an electrode structure that is in contact with the piezoelectric layer, and a dielectric. The electrode structure includes multiple fingers arranged across a plane having a first axis that is perpendicular to the multiple fingers and a second axis that is parallel to the multiple fingers. The dielectric is configured to separate the piezoelectric layer from the substrate layer and define a cavity between the piezoelectric layer and the substrate layer. The dielectric is also configured to support the piezoelectric layer across at least three points along the first axis.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
An apparatus is disclosed for bridge filters. In example aspects, the apparatus includes a filter circuit with a current balun (134) and a filter core (136). The current balun includes a first terminal (404-1) coupled to a first port (132) of the filter circuit, a second terminal (404-2), a third terminal (404-3), and a fourth terminal (404-4). The current balun also includes a first inductor (402-1) galvanically coupled between the first terminal and the second terminal. The current balun further includes a second inductor (404-2) galvanically coupled between the third terminal and the fourth terminal. The filter core is coupled between the current balun and a second port of the filter circuit. The filter core is galvanically coupled to the second terminal of the current balun and to the fourth terminal of the current balun.
An apparatus is disclosed for bridge filters. In example aspects, the apparatus includes a filter circuit with a current balun and a filter core. The current balun includes a first terminal coupled to a first port of the filter circuit, a second terminal, a third terminal, and a fourth terminal. The current balun also includes a first inductor galvanically coupled between the first terminal and the second terminal. The current balun further includes a second inductor galvanically coupled between the third terminal and the fourth terminal. The filter core is coupled between the current balun and a second port of the filter circuit. The filter core is galvanically coupled to the second terminal of the current balun and to the fourth terminal of the current balun.
An apparatus is disclosed for a reconfigurable filter. In example aspects, the apparatus includes a filter circuit that has a first filter port (302-1) and a second filter port (302-2). The filter circuit includes a filter network (304), an acoustic resonator (402, 132), and a switch circuit (404). The filter network includes one or more acoustic resonators (402, 132) coupled between the first filter port and the second filter port. The acoustic resonator is coupled to the filter network and coupled between the first filter port and the second filter port. The switch circuit is coupled between the acoustic resonator and the second filter port, and the switch circuit is configured to connect the acoustic resonator into a parallel acoustic resonator arrangement in a first state and connect the acoustic resonator into a serial acoustic resonator arrangement in a second state.
An apparatus is disclosed for a reconfigurable filter. In example aspects, the apparatus includes a filter circuit that has a first filter port and a second filter port. The filter circuit includes a filter network, an acoustic resonator, and a switch circuit. The filter network includes one or more acoustic resonators coupled between the first filter port and the second filter port. The acoustic resonator is coupled to the filter network and coupled between the first filter port and the second filter port. The switch circuit is coupled between the acoustic resonator and the second filter port, and the switch circuit is configured to connect the acoustic resonator into a parallel acoustic resonator arrangement in a first state and connect the acoustic resonator into a serial acoustic resonator arrangement in a second state.
An apparatus is disclosed for a bridge-type filter. In example aspects, the apparatus includes a filter circuit having a first port, a second port, and a filter core. The filter core is coupled between the first port and the second port. The filter core includes at least one transformer, a first resonator arrangement, and a second resonator arrangement. The first resonator arrangement is coupled to the at least one transformer and includes multiple acoustic resonators. The second resonator arrangement is coupled to the at least one transformer and includes multiple acoustic resonators.
An apparatus is disclosed for a lattice-type filter. In example aspects, the apparatus includes a filter circuit having a first port that is single-ended and a second port that is single-ended. The filter circuit also includes a transformer, a first resonator, a second resonator, a third resonator, and a fourth resonator. The transformer includes a first terminal, a second terminal, and a third terminal, with the third terminal coupled to the second port. The first resonator is coupled between the first port and the first terminal of the transformer. The second resonator is coupled between the first port and the second terminal of the transformer. The third resonator is coupled between the first terminal of the transformer and a ground. The fourth resonator is coupled between the second terminal of the transformer and the ground.
An apparatus is disclosed for a bridge-type filter. In example aspects, the apparatus includes a filter circuit having a first port, a second port, and a filter core. The filter core is coupled between the first port and the second port. The filter core includes at least one transformer, a first resonator arrangement, and a second resonator arrangement. The first resonator arrangement is coupled to the at least one transformer and includes multiple acoustic resonators. The second resonator arrangement is coupled to the at least one transformer and includes multiple acoustic resonators.
An apparatus is disclosed for a lattice-type filter. In example aspects, the apparatus includes a filter circuit having a first port that is single-ended and a second port that is single-ended. The filter circuit also includes a transformer, a first resonator, a second resonator, a third resonator, and a fourth resonator. The transformer includes a first terminal, a second terminal, and a third terminal, with the third terminal coupled to the second port. The first resonator is coupled between the first port and the first terminal of the transformer. The second resonator is coupled between the first port and the second terminal of the transformer. The third resonator is coupled between the first terminal of the transformer and a ground. The fourth resonator is coupled between the second terminal of the transformer and the ground.
H03H 9/70 - Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common or source
H04B 1/52 - Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
H04B 1/71 - Interference-related aspects the interference being narrowband interference
72.
SUSPENDING AN ELECTRODE STRUCTURE USING A DIELECTRIC
An apparatus is disclosed for suspending an electrode structure using a dielectric. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrode structure. The electrode structure has a first surface facing the piezoelectric layer and separated from the piezoelectric layer by a distance. The surface- acoustic-wave filter also includes a dielectric disposed on at least one other surface of the electrode structure and configured to extend past a plane defined by the first surface of the electrode structure and toward the piezoelectric layer to define a cavity between at least a portion of the first surface of the electrode structure and the piezoelectric layer.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
73.
SURFACE-ACOUSTIC-WAVE (SAW) FILTER WITH AN ELECTRICAL CONDUCTOR HAVING A FLOATING POTENTIAL
An apparatus is disclosed for a surface-acoustic-wave filter with an electrical conductor having a floating potential. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrode structure disposed on a surface of the piezoelectric layer. The electrode structure includes a first comb- shaped structure and a second comb-shaped structure. The electrode structure also includes at least one electrical conductor positioned between the first comb-shaped structure and the second comb-shaped structure such that a gap separates the at least one electrical conductor from the first comb-shaped structure and the second comb-shaped structure.
An apparatus is disclosed for suspending an electrode structure using a dielectric. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrode structure. The electrode structure has a first surface facing the piezoelectric layer and separated from the piezoelectric layer by a distance. The surface-acoustic-wave filter also includes a dielectric disposed on at least one other surface of the electrode structure and configured to extend past a plane defined by the first surface of the electrode structure and toward the piezoelectric layer to define a cavity between at least a portion of the first surface of the electrode structure and the piezoelectric layer.
H03H 9/145 - Driving means, e.g. electrodes, coils for networks using surface acoustic waves
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
75.
Surface-Acoustic-Wave (SAW) Filter with an Electrical Conductor Having a Floating Potential
An apparatus is disclosed for a surface-acoustic-wave filter with an electrical conductor having a floating potential. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer and an electrode structure disposed on a surface of the piezoelectric layer. The electrode structure includes a first comb-shaped structure and a second comb-shaped structure. The electrode structure also includes at least one electrical conductor positioned between the first comb-shaped structure and the second comb-shaped structure such that a gap separates the at least one electrical conductor from the first comb-shaped structure and the second comb-shaped structure.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing a SAW resonator with a resonance frequency located at the upper stopband edge. One aspect is an apparatus including an electrode structure with an interdigital transducer (IDT) having a center IDT region, a first IDT region, and a second IDT region. The center IDT region has a first pitch level, and the center IDT region has a first pitch level, and, reflectors comprising a first reflector region and a second reflector region, the first reflector region and the second reflector region each comprise a third pitch level lower than the first pitch level and the second pitch level.
Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing a SAW resonator (800) with a resonance frequency located at the upper stopband edge. One aspect is an apparatus including an electrode structure (870) with an interdigital transducer, IDT, (880) having a center IDT region (801) between a first IDT region (802a), and a second IDT region (802b). The center IDT region has a first pitch level, and the first and second IDT region have a second pitch level higher than the first. The electrode structure further includes reflectors comprising a first reflector region (803a) and a second reflector region (803b), each having a third pitch level lower than the first and the second pitch level.
A stacked AW filter package includes a first substrate stacked on a second substrate. The first substrate has a first AW filter circuit on first surface and a metal layer on a second surface. The second substrate has a second AW filter circuit disposed in a cavity between the metal layer of the first substrate and a third surface of the second substrate. The metal layer is coupled to the second AW filter circuit by a metal interconnect formed in a metallization layer on a side surface of the first substrate. The metal layer provides isolation to reduce cross-talk (e.g., electromagnetic interference) within the stacked AW filter package between the first AW filter circuit and the second AW filter circuit. Including the metal layer in the stacked AW filter package improves signal quality of transmitted and received signals filtered in the first and second AW filter circuits.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
A stacked AW filter package (200) includes a first substrate (204) stacked on a second substrate. The first substrate has a first AW filter circuit (202) on first surface (212) and a metal layer (210) on a second surface. The second substrate has a second AW filter circuit (206) disposed in a cavity between the metal layer (210) of the first substrate (204) and a third surface of the second substrate. The metal layer (210) is coupled to the second AW filter circuit (206) by a metal interconnect (230a) formed in a metallization layer on a side surface of the first substrate. The metal layer (210) provides isolation to reduce cross-talk (e.g., electromagnetic interference) within the stacked AW filter package (200) between the first AW filter circuit (202) and the second AW filter circuit (206). Including the metal layer (210) in the stacked AW filter package (200) improves signal quality of transmitted and received signals filtered in the first and second AW filter circuits (202,206).
Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device with one or more intermediate layers for reduced self-heating and methods for fabricating such a SAW device. One example SAW device generally includes a piezoelectric layer and an interdigital transducer (IDT) disposed above the piezoelectric layer. The IDT generally includes a first electrode having a first busbar and a first plurality of fingers. The first electrode generally includes a first copper layer disposed above the piezoelectric layer, a first intermediate layer disposed above the first copper layer, the first intermediate layer comprising a different material than the first copper layer, and a second copper layer disposed above the first intermediate layer.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device with one or more intermediate layers for reduced self-heating and methods for fabricating such a SAW device. One example SAW device generally includes a piezoelectric layer and an interdigital transducer (IDT) disposed above the piezoelectric layer. The IDT generally includes a first electrode having a first busbar and a first plurality of fingers. The first electrode generally includes a first copper layer disposed above the piezoelectric layer, a first intermediate layer disposed above the first copper layer, the first intermediate layer comprising a different material than the first copper layer, and a second copper layer disposed above the first intermediate layer.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Certain aspects of the present disclosure provide a filter circuit and techniques for filtering using the filter circuit. The filter circuit generally includes a first filter stage (401) having a first acoustic wave resonator (410) coupled in a series path between a first port (480) of the filter circuit and a second port (482) of the filter circuit, a first inductor-capacitor, LC, tank circuit (414,416), a first capacitor (408) coupled between a first terminal of the first acoustic wave resonator and the first LC tank circuit, the first LC tank circuit being coupled between the first capacitor and a reference potential node, and a second capacitor (412) coupled between a second terminal of the first acoustic wave resonator and the first LC tank circuit. In some aspects, the filter circuit includes one or more other filter stages (404,406,490) coupled to the first filter stage.
Certain aspects of the present disclosure provide a filter circuit and techniques for filtering using the filter circuit. The filter circuit generally includes a first filter stage having a first acoustic wave resonator coupled in a series path between a first port of the filter circuit and a second port of the filter circuit, a first inductor-capacitor (LC) tank circuit, a first capacitor coupled between a first terminal of the first acoustic wave resonator and the first LC tank circuit, the first LC tank circuit being coupled between the first capacitor and a reference potential node, and a second capacitor coupled between a second terminal of the first acoustic wave resonator and the first LC tank circuit. In some aspects, the filter circuit includes one or more other filter stages coupled to the first filter stage.
An apparatus is disclosed for harmonic reduction with filtering. In example aspects, the apparatus includes a filter circuit with first and second filter ports, first and second lattice filters, and first and second signal manipulator circuits. The first signal manipulator circuit includes a first port, a second port, and a third port coupled to the first filter port. The first signal manipulator circuit splits an input signal into multiple split signals, shifts a phase thereof to produce at least one phase-shifted split signal, and provides the phase-shifted split signal to the first and second ports. The first lattice filter is coupled to the first port, and the second lattice filter is coupled to the second port. The second signal manipulator circuit includes a first port coupled to the first lattice filter, a second port coupled to the second lattice filter, and a third port coupled to the second filter port.
A package that includes an acoustic device, a frame coupled to the acoustic device and a cap substrate coupled to the acoustic device through the frame. The acoustic device includes a substrate and an acoustic element coupled to the substrate. The cap substrate includes an inductor. The cap substrate is configured as a cap for the acoustic device. The package includes a cavity located between the acoustic device and the cap substrate. The frame may include a polymer frame.
A multi-level stacked AW filter package including a first acoustic wave (AW) filter stacked on a second AW filter employs semiconductor fabrication methods and structures, including a metallization layer comprising interconnects to couple a contact surface to the second AW filter. Each AW filter includes an AW filter circuit on a semiconductor substrate. A second substrate disposed on a frame on the substrate protects the AW filter circuit. In a multi-level AW filter package, the second substrate of the first AW filter comprises a glass substrate with a similar expansion rate as the semiconductor substrate. The interconnects coupling the second AW filter to the contact surface are disposed on insulators on the side wall surfaces of the semiconductor substrates of the first AW filter for isolation. In a stacked AW filter package comprising a single AW filter, the interconnects couple the contact surface to the AW filter.
H03H 9/145 - Driving means, e.g. electrodes, coils for networks using surface acoustic waves
H03H 9/25 - Constructional features of resonators using surface acoustic waves
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
87.
Surface-Acoustic-Wave (SAW) Filter with a Compensation Layer Having Multiple Densities
An apparatus is disclosed for a surface-acoustic-wave filter with a compensation layer having multiple densities. In an example aspect, the apparatus includes at least one surface-acoustic-wave filter with a piezoelectric layer, a substrate layer, and a compensation layer positioned between the piezoelectric layer and the substrate layer. The compensation layer includes a first portion having a first density and a second portion having a second density. The second density is greater than the first density. The first portion is positioned closer to the piezoelectric layer as compared to the second portion. The second portion is positioned closer to the substrate layer as compared to the first portion.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Disclosed are a device and techniques for fabricating the device. The device may include a top substrate including a plurality of top vias coupled to a first top metal layer that forms a top winding portion of a first inductor. The device also includes a middle substrate including one or more middle metal layers. The top substrate is disposed on the middle substrate. The one or more middle metal layers form a middle winding portion of the first inductor. The device also includes a bottom substrate electrically coupled to the middle substrate opposite the top substrate, where a first bottom metal layer of the bottom substrate forms a bottom winding portion of the first inductor.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
89.
ELECTROACOUSTIC FILTER WITH LOW PHASE DELAY FOR MULTIPLEXED SIGNALS
Aspects of the disclosure relate to wireless communication filtering. One aspect is an apparatus including a first acoustic resonator that is part of a first bandpass filter having a first passband and coupled to a circuitry connection port and a communication connection port, and a second acoustic resonator that is part of one of a second bandpass filter or a notch filter. The apparatus further includes a third acoustic resonator that is part of the first bandpass filter, and a fourth acoustic resonator that is part of the second bandpass filter or the notch filter.
Aspects are provided for multiband multiplexers. One example is a multiband multiplexer with a first filter element configured to have a first passband that spans a first predefined frequency range of a first communication band and a second predefined frequency range of a second communication band, wherein the first predefined frequency range overlaps a portion of the second predefined frequency range, a second filter element configured to have a second passband distinct from the first passband, a third filter element configured to have a third passband distinct from the first and second passbands, and a fourth filter element configured to have a fourth passband distinct from the first, second, and third passbands.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
Certain aspects of the present disclosure can be implemented in an electroacoustic device. The electroacoustic device generally includes a substrate and one or more resonator structures disposed above the substrate. In some cases, each resonator structure of the one or more resonator structures includes a bulk acoustic resonator, an acoustic mirror disposed below the bulk acoustic resonator, and one or more porous material layers disposed below the acoustic mirror and above the substrate.
A surface acoustic wave device (5) is provided using a layered substrate system with a special material and a special cut of a piezoelectric thin film (4) selected for utilizing Rayleigh mode. The proper choice of the material and the cut of the piezoelectric thin film leads to a low velocity of the excited wave mode, which allows the usage of smaller devices without deteriorating other performance parameters according to specifications.
In at least one embodiment, the electric component comprises a first BAW-resonator (1), a second BAW-resonator (2) electrically connected to the first BAW-resonator and a carrier substrate (3) with a top side (30) on which the BAW-resonators are arranged. The first and the second BAW-resonator each comprise a bottom electrode (11,21) and a top electrode (12,22). The bottom electrodes are in each case located between the carrier substrate and the respective top electrode. A first piezoelectric layer (13) is arranged between the top electrode and the bottom electrode of the first BAW-resonator and laterally protrudes from the first BAW-resonator. The second BAW-resonator is mounted on the first piezoelectric layer in a region laterally next to the first BAW-resonator and comprises a second piezoelectric layer (23) between its top electrode and its bottom electrode. The two piezoelectric layers may have different thickness to realize resonators with different resonance frequencies on the same die.
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic device. The forming of the capacitive element may include forming a protective layer above the substrate where a first portion of the protective layer is above the second region of the substrate and a second portion of the protective layer is above the first region of the substrate, forming a dielectric region above the protective layer, and forming an electrode above the dielectric region. The dielectric region may include a different material than the protective layer.
The SAW filter chip comprises a plurality of SAW filters (1, 2), wherein at least one of the several electric filters is a first-type electric filter (1) comprising at least one first-type SAW-resonator (10). The first-type SAW-resonator comprises a piezoelectric layer (11), an intermediate layer (12) on the piezoelectric layer (11) and an interdigital electrode structure (13) on the intermediate layer (12). The interdigital electrode structure is separated from the piezoelectric layer by the intermediate layer. The intermediate layer is made of a dielectric, non-piezoelectric material and adjusts the electromechanical coupling factor and the bandwidth of the respective filter. The plurality of SAW filters form an LTE multiplexer, wherein the thickness of the intermediate layer is chosen to adjust the required bandwidth to the desired bands. The intermediate layer may be absent for larger required bandwidths.
An apparatus and method for making an acoustic filter package where the apparatus includes a base layer; a support layer disposed on the base layer; a piezoelectric structure disposed on the support layer; wherein the piezoelectric structure comprises: a piezoelectric layer; a top electrode on a top surface of the piezoelectric layer; a bottom electrode on a bottom surface of the piezoelectric layer; a contact pad coupled to the bottom electrode that extends through an opening in the piezoelectric layer and is coupled to the bottom electrode or the top electrode; and a corrosion resistant pad disposed on the contact pad; and a capping structure disposed on the piezoelectric structure.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
An apparatus is disclosed for site-selective piezoelectric-layer trimming. The apparatus includes at least one surface-acoustic-wave filter with an electrode structure and a piezoelectric layer. The electrode structure has multiple gaps. The piezoelectric layer has a planar surface defined by a first (X) axis and a second (Y) axis that is perpendicular to the first (X) axis. The piezoelectric layer is configured to propagate an acoustic wave along the first (X) axis. The piezoelectric layer includes a first portion that supports the electrode structure and a second portion that is exposed by the multiple gaps of the electrode structure. The second portion has different heights across the second (Y) axis. The different heights are defined with respect to a third (Z) axis that is substantially normal to the planar surface.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H03H 9/145 - Driving means, e.g. electrodes, coils for networks using surface acoustic waves
H03H 9/25 - Constructional features of resonators using surface acoustic waves
An electroacoustic resonator comprises a substrate (3) with a piezoelectric material and an interdigital electrode structure on a top side (33) of the substrate. The electrode structure comprises a first electrode (1) and a second electrode (2) each with a busbar (20) and a plurality of fingers (10). The fingers of both electrodes interdigitate. The region of the top side between the two busbars is subdivided into two barrier regions (113), two trap regions (112) and one track region (111), the trap regions being located between the two barrier regions and the track region being located between the two trap regions. At least some fingers each comprise one barrier portion (13), two trap portions (12) and one track portion (11), wherein the barrier portion is associated with the barrier region closest to the busbar assigned to the finger, the trap portions are each associated with one of the trap regions and the track portion is associated with the track region. The fingers are configured such that the velocity of a main mode of surface acoustic waves is smaller in the trap regions than in the track region. Each electrode comprises a plurality of stub fingers (30) being shorter than the fingers. Each stub finger is associated only with the barrier region closest to the busbar assigned to the stub finger. The electrodes are configured such that a velocity of the main mode in the barrier regions is greater than in the track region.
A BAW device comprises a first BAW resonator (1) and a second BAW resonator (2). The first BAW resonator and the second BAW resonator each comprise a first electrode (11, 21), a second electrode (12, 22) and a piezoelectric layer (13, 23) being arranged in each case between the first electrode and the second electrode of the associated BAW resonator. The first electrodes, the second electrodes and the piezoelectric layers of both BAW resonators are designed essentially identically. A first conductor track (24) extends from the first electrode of the second BAW resonator to a third electric element (3) of the BAW device and electrically connects said first electrode with said third electric element. A first dummy conductor track (14) extends from the first electrode of the first BAW resonator, is electrically connected to said first electrode and, apart from said first electrode, is not electrically connected to any further electric element. The first dummy conductor track is designed such that it influences the acoustic and capacitive properties of the first BAW resonator essentially in the same way as the first conductor track influences the acoustic and capacitive properties of the second BAW resonator.
A BAW resonator (RN) with reduced lateral modes is provided. The resonator has an active stack of bottom electrode (BE), piezoelectric material (PM) and top electrode (TE) and at least one element of this active stack has a curved side wall (CSW). Two or more curved side walls may be arranged on spheres, on cylinders or prisms with an elliptical footprint with different radii.
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