A microlight emitting diode (LED) system and method of transmitting data are disclosed. The system includes either a first array that contains multiple subarrays or a second array. Each subarray includes multiple independently-addressable single color microLEDs that emit light of different colors and are independently modulated for data communication to another microLED array. The second array contains at least one independently-addressable polychromic microLED. Each polychromic microLED has multiple independently-addressable active regions that emit different colors and that are independently modulated for data transmission to the other microLED array. A photodetector array receives data as multi-color light from the other microLED array and has multiple photodetectors each tuned for a specific color.
H04B 10/43 - Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A light-emitting diode (LED) die, a wafer of LED dies, and methods of manufacturing at least one LED die are described. The LED die (1000) includes a semiconductor stack configured to emit a pump (blue) light when energized and a wavelength converter over the semiconductor stack. The wavelength converter converts some of the pump light to a converted light having a differing color. The LED die further includes a spatially inhomogeneous dichroic filter (blue DCF 1008) on the wavelength converter. Said filter is configured to at least one of: - increase reflection of the pump light in special regions of peak luminance, - increase reflection of the converted light in spatial regions of low luminance, - increase transmission in at least a portion of the converted light in spatial regions of peak luminance, or - increase transmission of the pump light in spatial regions of low luminance.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
A wavelength converter for a shaped surface luminance LED die is described. The wavelength converter produces a peak luminance in a region of the LED die when powered on. The wavelength converter includes a body of a wavelength converting material having a width, a length, and a height. A cross-section of the body in the length direction has a shape such that, when the wavelength converter is installed over the LED die, the height of the body is larger adjacent the region of the LED die that produces the peak luminance.
A lighting system and method of driving an array of micro light emitter (microLED) pixels are disclosed. Each pixel contains a blue sub-pixel configured to emit blue light, a red sub-pixel configured to emit red light, a green sub-pixel configured to emit green light, and a yellow sub-pixel configured to emit yellow light. A processor selects, for each pixel to produce white light, between driving the blue sub-pixel and yellow sub-pixel to produce the white light and driving the blue sub-pixel, the red sub-pixel, the green sub-pixel, and the yellow sub-pixel to produce the white light.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H10H 29/34 - Active-matrix LED displays characterised by the geometry or arrangement of subpixels within a pixel, e.g. relative disposition of the RGB subpixels
6.
WAVELENGTH CONVERTER AND LED DIE FOR CORRECTING EDGE COLOR SHIFT AND METHODS OF MANUFACTURE
An LED die, a wafer of LED dies, and methods of manufacture are described. The LED die includes a semiconductor stack configured to emit a pump light when energized and a wavelength converter over the semiconductor stack. The wavelength converter converts some of the pump light to a converted light having a differing color. A spatially inhomogeneous dichroic filter on the wavelength converter, which at least one of: increases reflection of the pump light in special regions of peak luminance, increases reflection of the converted light in spatial regions of low luminance, increases transmission in at least a portion of the converted light in spatial regions of peak luminance, or increases transmission of the pump light in spatial regions of low luminance.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
7.
WAVELENGTH CONVERTER AND LED DIE FOR CORRECTING EDGE COLOR SHIFT AND METHODS OF MANUFACTURE
A wavelength converter for a shaped surface luminance LED die is described. The wavelength converter produces a peak luminance in a region of the LED die when powered on. The wavelength converter includes a body of a wavelength converting material having a width, a length, and a height. A cross-section of the body in the length direction has a shape such that, when the wavelength converter is installed over the LED die, the height of the body is larger adjacent the region of the LED die that produces the peak luminance.
A light emitting diode (LED) display and method of forming the display are disclosed. The display includes microLED pixels disposed on the backplane interspersed with photodetector pixels. Each photodetector pixel contains a metasurface that uses a grating to accept a narrow angular range of light, insulating spacers, and a conductive waveguide layer disposed between the insulating spacers. The insulating spacers have a refractive index to permit coupling to the waveguide layer, which supports surface plasmons and acts as a waveguide for in-plane light. The insulating spacers or another layer is formed from a material whose refractive index changes with at least one of an applied electrical or thermal stimulus to control a direction of a center angle of the narrow angular range.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A light emitting diode (LED) display and method of forming the display are disclosed. The display includes microLED pixels disposed on the backplane interspersed with photodetector pixels. Each photodetector pixel contains a metasurface that uses a grating to accept a narrow angular range of light, insulating spacers, and a conductive waveguide layer disposed between the insulating spacers. The insulating spacers have a refractive index to permit coupling to the waveguide layer, which supports surface plasmons and acts as a waveguide for in-plane light. The insulating spacers or another layer is formed from a material whose refractive index changes with at least one of an applied electrical or thermal stimulus to control a direction of a center angle of the narrow angular range.
H10H 29/32 - Active-matrix LED displays characterised by the geometry or arrangement of elements within a subpixel, e.g. arrangement of the transistor within its RGB subpixel
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
10.
Phosphor-Converted Light Emitting Diodes (LEDs) Color Tuning
Light sources including pluralities of light emitting diodes (LEDs) comprise primary and laser-modified device materials in order to achieve tuned color point distributions. The device materials may be down converter materials and/or functional materials. Tuned color point distributions include improved color yields by modifying sections of the device material of the LEDs that skew a baseline color point distribution. Other tuned color point distributions provide a centroid of a tuned color distribution relative to a centroid of a baseline color distribution by modifications to sections of the device material. Modifications to the device material may be conducted by femtosecond laser irradiation. Modifications to down converter materials may include ablation for thickness reduction and/or roughening for a surface topography change and/or three-dimensional shaping for light emission tunability. Modifications to functional materials may include ablation for thickness reduction.
A lens comprises a first surface and a second surface opposite the first surface. The first surface includes a first convex central refractive portion and a total internal reflection (TIR) portion peripheral to the first convex central portion. The second surface includes a second convex central refractive portion and a peripheral refractive portion having a curvature different from a curvature of the second convex central refractive portion. The first convex central refractive portion and the second convex central refractive portion are shaped to collimate or partially collimate light via refraction at the first convex central portion followed by refraction at the second convex central portion. The TIR portion and the peripheral refractive portion are shaped to collimate or partially collimate light by total internal reflection at the TIR portion followed by refraction at the peripheral refractive portion.
This specification discloses a converter element and light emitting devices including the converter element. The converter element is monolithic with at least two layers, where one layer is more porous than the other layer. The converter element may be integrated with a reflector layer, such as by metallization. The layer of the converter structure that is denser and having a smoother surface may be the one that is metallized, while the more porous layer is closer to the laser. The porosity enhances light extraction while the smoother surface decreases a loss of reflectivity at the reflector-phosphor interface. The converter element may be used in a laser based light emitting device.
A vertical thin-film (VTF) light emitting diode (LED) having embedded contacts is described. The vertical thin-film (VTF) light emitting diode (LED) having embedded contacts has structure where the metal layer constitutes both bondpad(s) and associated electric contact to the semiconductor. The metal layer is embedded and, hence, no longer blocking light from the light emitting surface. The vertical thin-film (VTF) light emitting diode (LED) having embedded contacts comprises a plurality of group III-V semiconductor material layers, including binary, ternary, and quaternary alloys of gallium (Ga), aluminum (Al), indium (In), and phosphorus (P) and a multiple quantum well layer on a substrate. At least one ne of the plurality of group III-V semiconductor material layers comprise an aluminum indium phosphide (AlInP) layer or a low confinement layer (LCL) comprising aluminum indium gallium phosphide (AlInGaP)
Provided is an LED comprised of a single mesa epitaxial stack structure with a set of three p-n junctions and having four electrical contact terminals. A polychromatic, multi/full-color emitting, LED chip is assembled with a backplane and has four electrical contact terminals. The polychromatic LED is transferrable and able to be integrated each individually or as a mass array.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The p-doped layer has a refractive index of nP and a nonzero thickness less than 10λ0/nP. The LED is less than 30λ0/nP wide, and the anode electrical contact is in direct contact with only a central region of the p-doped layer that is separated from the LED side surfaces by more than λ0/2nP. The LED width, the separation of the anode contact from the LED side surface, and the p-doped layer thickness can result in one or more of (i) increased Purcell factor, (ii) increased extraction efficiency, (iii) increased overall light output efficiency, or (iv) narrowed light output angular distribution.
A light emitting diode package (500) is provided. The package (500) includes a molded lead frame package. The molded lead frame package includes a lead frame (220) that defines a cavity (505). The light emitting diode package includes a reflector (490) on the molded lead frame package in a center of the cavity. The light emitting diode package includes light emitting diode chips (240) mounted on the molded lead frame package. The chips (240) are in a symmetric shape around the reflector (490) and the center of the cavity. The resulting light emitting diode package (500) has improved light quality, in particular when it further comprises a phosphor silicone matrix (260) in that blueish light ray (515) from a side of the chip (240) can be redirected upwards by the reflector (490) in order to mix with a yellowish light ray (525) in a color remix space (535).
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A vertical thin-film (VTF) light emitting diode (LED) having embedded contacts is described. The vertical thin-film (VTF) light emitting diode (LED) having embedded contacts has structure where the metal layer constitutes both bondpad(s) and associated electric contact to the semiconductor. The metal layer is embedded and, hence, no longer blocking light from the light emitting surface. The vertical thin-film (VTF) light emitting diode (LED) having embedded contacts comprises a plurality of group III-V semiconductor material layers, including binary, ternary, and quaternary alloys of gallium (Ga), aluminum (Al), indium (In), and phosphorus (P) and a multiple quantum well layer on a substrate. At least one ne of the plurality of group III-V semiconductor material layers comprise an aluminum indium phosphide (AlInP) layer or a low confinement layer (LCL) comprising aluminum indium gallium phosphide (AlInGaP).
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
Provided is an LED comprised of a single mesa epitaxial stack structure with a set of three p-n junctions and having four electrical contact terminals. A polychromatic, multi/full-color emitting, LED chip is assembled with a backplane and has four electrical contact terminals. The polychromatic LED is transferrable and able to be integrated each individually or as a mass array.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
22.
LIGHT EMITTING DIODE PACKAGE WITH IMPROVED LIGHT QUALITY
A light emitting diode package is provided. The light emitting diode package includes molded lead frame package. The molded lead frame package includes a lead frame that defines a cavity. The light emitting diode package includes a reflector on the molded lead frame package in a center of a cavity. The light emitting diode package includes chips mounted on the molded lead frame package. The chips are in a symmetric shape around the reflector and the center of the cavity.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - Details of semiconductor or other solid state devices
AlInGaP LEDs and microLEDs (e.g. 600) comprise a transparent conductive oxide (TCO) layer (620) disposed on and making ohmic contact to an n-type AlInGaP layer (605). The TCO layer may be used to make electrical contact to the n-type side of the diode junction in the LED without obstructing transmission of light out of the LED through the n-type surface on which the TCO layer is disposed. The TCO layer may improve n-side current spreading. The TCO layer may be used to interconnect the n-side contacts of adjacent AlInGaP microLEDs in an array (700) to form a shared n-side electrical contact with little or no optical cross-talk. The TCO layer may improve the reflectivity of an n-side metal contact arranged to direct light out of the LED.
H10H 29/49 - Interconnections, e.g. wiring lines or terminals
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/832 - Electrodes characterised by their material
H10H 20/831 - Electrodes characterised by their shape
H10H 20/84 - Coatings, e.g. passivation layers or antireflective coatings
H10H 20/841 - Reflective coatings, e.g. dielectric Bragg reflectors
24.
Transparent Conductive Oxide Layer With Ohmic Contact On n-type AlInGaP for LEDs and MicroLEDs
AlInGaP LEDs and microLEDs comprise a transparent conductive oxide (TCO) layer disposed on and making Ohmic contact to an n-type AlInGaP layer. The TCO layer may be used to make electrical contact to the n-type side of the diode junction in the LED without obstructing transmission of light out of the LED through the n-type surface on which the TCO layer is disposed. The TCO layer may improve n-side current spreading. The TCO layer may be used to interconnect the n-side contacts of adjacent AlInGaP microLEDs in an array to form a shared n-side electrical contact with little or no optical cross-talk. The TCO layer may improve the reflectivity of an n-side metal contact arranged to direct light out of the LED.
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
25.
Carrier Confinement Structure of AlInGaP MicroLEDs
AlInGaP microLEDs comprise AlInGaP quantum dots disposed in one or more quantum wells in the microLED light emitting active region. The quantum dots trap and confine carriers (electrons and holes) that are injected into the light emitting active region during operation of the microLED, preventing the confined carriers from moving laterally along the quantum wells to reach nonradiative recombination centers at the perimeter surfaces of the device and thereby increasing the light emitting efficiency of the microLED.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
26.
CARRIER CONFINEMENT STRUCTURE OF ALINGAP MICROLEDS
AlInGaP microLEDs comprise AlInGaP quantum dots disposed in one or more quantum wells in the microLED light emitting active region. The quantum dots trap and confine carriers (electrons and holes) that are injected into the light emitting active region during operation of the microLED, preventing the confined carriers from moving laterally along the quantum wells to reach nonradiative recombination centers at the perimeter surfaces of the device and thereby increasing the light emitting efficiency of the microLED.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/822 - Materials of the light-emitting regions
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
27.
CHIP SCALE PACKAGE LIGHT-EMITTING DEVICE WITH THIN, CONFORMAL WAVELENGTH CONVERTER
A light-emitting device includes a transparent substrate less than 60 µm thick, a semiconductor diode structure on one surface of the substrate, and a wavelength-converting layer less than 50 µm thick on the other surface and the sidewalls of the substrate. The wavelength-converting layer includes luminescent particles having D50 less than 20 µm that are bound together or to the substrate by an inorganic coating medium less than 700 nm thick that is index-matched with the substrate. The luminescent particles absorb light emitted by the semiconductor diode structure at a first wavelength and emit light at a second, longer wavelength.
An inventive luminescent material suitable for use as a phosphor for an LED includes a nitridophosphate material having a general formula AEy-xLi10-2yP4N10:Eux, wherein (i) AE includes one or more of Ca, Sr, or Ba, and (ii) y≥x>0. In some instances, y can equal 2 and x can be between 0 and 0.1. In some instances, AE can include only Ca; in some other instances, AE can include a majority amount of Ca and lesser amounts of Sr or Ba. In some instances, the luminescent material can exhibit a peak emission wavelength greater than 600 nm.
A light-emitting device includes a transparent substrate less than 60 μm thick, a semiconductor diode structure on one surface of the substrate, and a wavelength-converting layer less than 50 μm thick on the other surface and the sidewalls of the substrate. The wavelength-converting layer includes luminescent particles having D50 less than 20 μm that are bound together or to the substrate by an inorganic coating medium less than 700 nm thick that is index-matched with the substrate. inorganic binder, optical sidewall coating, and an optical sidewall structure. The luminescent particles absorb light emitted by the semiconductor diode structure at a first wavelength and emit light at a second, longer wavelength.
y-x10-2y41010:Eux, wherein (i) AE includes one or more of Ca, Sr, or Ba, and (ii) y. x > 0. In some instances, y can equal 2 and x can be between 0 and 0.1. In 5 some instances, AE can include only Ca; in some other instances, AE can include a majority amount of Ca and lesser amounts of Sr or Ba. In some instances, the luminescent material can exhibit a peak emission wavelength greater than 600 nm.
Dual Color LED assembly comprising: a printed circuit board, substrate, having an upper side and an opposite lower side; two LEDs arranged on the upper side of the substrate, wherein the LEDs are configured to emit light with different colors; wherein the two LEDs are electrically connectable antiparallel on the substrate.
imageimageimage) overlap at the target area (T). The invention further describes a method of manufacturing such an illumination assembly (1), and a portable device (2) comprising such an illumination assembly (1).
A device (100) includes a complementary metal-oxide semiconductor (CMOS) backplane comprising multiple light emitting diode (LED) pixels areas (110). The device includes pixel drivers (130) inside the CMOS backplane. Each pixel driver of the pixel drivers is coupled to a ground (140). The pixel drivers are configured into groups (150) corresponding to the multiple LED pixels areas.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
An n‑doped semiconductor layer spans multiple LEDs of an array, in some cases the entire array. Corresponding p‑contacts are localized on the p‑doped semiconductor layer of each LED to only a central region of that LED and are electrically isolated from the p‑contacts of adjacent LEDs. Corresponding n‑contacts (i) are localized to only peripheral regions of the corresponding LEDs, (ii) extend through the p‑doped layers and the active regions of adjacent LEDs to make contact with the continuous n‑doped layer, and (iii) are electrically isolated from those p‑doped layers and active regions. In some cases the nonzero combined thickness of the n‑doped layer, p‑doped layer, and the active region can be less than 5 µm.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
A light emitting diode (LED) array and method of fabricating the LED array are described. The LED array has a plurality of pixels that each contains a semiconductor stack having a trapezoidal cross-section with respect to a growth direction, a transparent conducting oxide (TCO) layer on the semiconductor stack, and a dielectric (SiO2) micro lens structure disposed on the TCO layer. The micro lens structure has a lens with a trapezoidal cross-section with respect to the growth direction. The micro lens structure may have a residual layer with a non-trapezoidal cross-section disposed between the lens and the TCO layer. The TCO layer provides a common cathode to a set of the pixels. The angle of sidewalls of the semiconductor stack is different than an angle of the trapezoidal cross-section of the micro lens structure.
A headlighting system is provided. The headlighting system includes a plate, a reference plane, a reference position for installation; and light emitting diode filaments on the plate at the reference position. An edge of a first light emitting diode filament of the light emitting diode filaments is on the plate at a distance from the reference plane.
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21S 41/151 - Light emitting diodes [LED] arranged in one or more lines
F21S 41/663 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources by switching light sources
37.
SINGLE COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR BACKPLANE TO SUPPORT MULTIPLE LIGHT EMITTING DIODE PIXEL SIZES
According to one or more embodiments, a device is provided. The device includes a complementary metal oxide semiconductor (CMOS) backplane comprising multiple light emitting diode (LED) pixels areas. The device includes a pixel drivers inside the CMOS backplane. Each pixel driver of the pixel drivers is coupled to a ground. The pixel drivers are configured into groups corresponding to the multiple LED pixels areas.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
An n-doped semiconductor layer spans multiple LEDs of an array, in some cases the entire array. Corresponding p-contacts are localized on the p-doped semiconductor layer of each LED to only a central region of that LED and are electrically isolated from the p-contacts of adjacent LEDs. Corresponding n-contacts (i) are localized to only peripheral regions of the corresponding LEDs, (ii) extend through the p-doped layers and the active regions of adjacent LEDs to make contact with the continuous n-doped layer, and (iii) are electrically isolated from those p-doped layers and active regions. In some cases the nonzero combined thickness of the n-doped layer, p-doped layer, and the active region can be less than 5 μm.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
A headlighting system is provided. The headlighting system includes a plate. The headlighting system includes a reference plane. The headlighting system includes light emitting diode filaments. The light emitting diode filaments are on the plate. The light emitting diode filaments are on the plate at reference positions. The reference positions are set at distances from the reference plane.
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21S 41/151 - Light emitting diodes [LED] arranged in one or more lines
F21S 41/663 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources by switching light sources
A compact LED package has a segmented semiconductor structure that may emit light and at least two wavelength converting structures absorbing the emitted light to emit their own light. One of the wavelength converting structures may emit infrared (IR) or near-infrared (NIR) light, e.g., for IR sensing functions, while the other may emit visible light. The wavelength converting structures may be ceramic platelets coupled to each other. The segments of the semiconductor structure may be individually addressable, and the segmented semiconductor structure may allow for a reduction of package size compared to conventional LED packages.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
A light-emitting device includes red InGaN-based LED(s), green III‑nitride-based LED(s), and blue III‑nitride-based LED(s), which respectively emit red emitted light, green emitted light, and blue emitted light. Spectrally selective optical element(s), on which at least the red emitted light is incident, result in red output light having a red output color point, green output light having a green output color point, and blue output light having a blue output color point. The red, green, and blue output color points define a color gamut that encompasses at least an sRGB color gamut, in some examples even when corresponding color points of the red, green, and blue emitted light do not.
A light-emitting diode (LED) array comprises: a plurality of pixels, each of the pixels comprising respective groups of light emitting diodes (LEDs), the plurality of pixels comprising: a first set of pixels configured to emit a first red dominant wavelength; a second set of pixels configured to emit a first green dominant wavelength; a third set of pixels configured to emit a first blue dominant wavelength; the first red dominant wavelength, the first green dominant wavelength, and the first blue dominant wavelength defining a RGB (red-green-blue) gamut; and a fourth set of pixels configured to emit a non-white emission comprising a luminous efficacy that is higher than either of the first set of pixels or the third set of pixels to increase power efficiency of the device.
G09G 3/00 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
Methods and devices including a die with a plurality of metal reflectors and/or a distributed bragg reflector (DBR) may improve optical efficiency and/or reflectivity of the system. The metal reflectors may be highly reflective and cover most of the die area including at least most of the n-contact areas. The DBR may also cover most of the die areas. Reflectivity may be improved as a result of one or both of these elements. Additionally, a transparent conductive oxide layer may cover the n-contact areas to improve current spreading.
Methods and devices including a die with a segmented transparent conductive oxide structure and/or a distributed bragg reflector (DBR) may improve optical efficiency and/or reflectivity of the system. The process of fabricating such a die has an improved workflow that may decrease the number of steps and/or masks used, such as by simultaneously depositing and/or patterning one or more structures in the die which may conventionally require more than one step. In this way, the luminous flux of the completed die is improved while the cost of production is decreased.
A headlighting system is provided. The headlighting system includes a plate. The headlighting system includes a reference plane. The headlighting system includes light emitting diode filaments. The light emitting diode filaments are on the plate. The light emitting diode filaments are on the plate at reference positions. The reference positions are set at distances from the reference plane.
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21W 102/14 - Arrangement or contour of the emitted light for high-beam region or low-beam region the light having cut-off lines, i.e. clear borderlines between emitted regions and dark regions having vertical cut-off linesArrangement or contour of the emitted light for high-beam region or low-beam region the light having cut-off lines, i.e. clear borderlines between emitted regions and dark regions specially adapted for adaptive high beams, i.e. the beam is broader but avoids glaring other road users
A headlighting system is provided. The headlighting system includes a plate, a reference plane, a reference position for installation. The headlighting system includes light emitting diode filaments on the plate at the reference position. An edge of a first light emitting diode filament of the light emitting diode filaments is on the plate at a distance from the reference plane.
F21S 41/143 - Light emitting diodes [LED] the main emission direction of the LED being parallel to the optical axis of the illuminating device
F21S 41/153 - Light emitting diodes [LED] arranged in one or more lines arranged in a matrix
F21W 102/13 - Arrangement or contour of the emitted light for high-beam region or low-beam region
F21Y 105/16 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array square or rectangular, e.g. for light panels
H05B 45/3577 - Emulating the dimming characteristics, brightness or colour temperature of incandescent lamps
47.
DEVICES AND METHODS PREVENTING DEGRADATION OF LIGHT EMITTING STRUCTURES
This specification discloses light emitting structures with light emitting devices, where the structures include a protective layer that blocks certain wavelengths of light from degrading particularly vulnerable elements of the light emitting structures. The protective layer may be a transparent UV blocking layer that prevents a substantial amount of UV light from reaching an adhesive layer that would otherwise yellow or degrade under UV exposure. The transparent UV blocking layer may be completely or largely transparent to visible light, so that a user of the light emitting structure can clearly view the visible light emitted or incident on the light emitting structures.
Lighting element in particular for an automobile, comprising a mixing box comprising a backwall and sidewalls extending from the backwall, at least one light emitting element, extending through an opening of the backwall, and a diffusor connected to the mixing box opposite to the backwall and having a front face facing away from the backwall and an opposite back face facing in the direction of the backwall, wherein the diffusor receives light from the at least one light emitting element via its back face and emits light via its front face, wherein the back face of the diffusor extends towards the backwall of the mixing box, wherein the extension of the back face is asymmetrical along at least one lateral direction and the back face is distant of the backwall.
Methods and devices including a die with a plurality of metal reflectors and/or a distributed bragg reflector (DBR) may improve optical efficiency and/or reflectivity of the system. The metal reflectors may be highly reflective and cover most of the die area including at least most of the n-contact areas. The DBR may also cover most of the die areas. Reflectivity may be improved as a result of one or both of these elements. Additionally, a transparent conductive oxide layer may cover the n-contact areas to improve current spreading.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
A light-emitting diode (LED) array comprises: a plurality of pixels, each of the pixels comprising respective groups of light emitting diodes (LEDs), the plurality of pixels comprising: a first set of pixels configured to emit a first red dominant wavelength; a second set of pixels configured to emit a first green dominant wavelength; a third set of pixels configured to emit a first blue dominant wavelength; the first red dominant wavelength, the first green dominant wavelength, and the first blue dominant wavelength defining a RGB (red-green-blue) gamut; and a fourth set of pixels configured to emit a non-white emission comprising a luminous efficacy that is higher than either of the first set of pixels or the third set of pixels to increase power efficiency of the device.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Methods and devices including a die with a segmented transparent conductive oxide structure and/or a distributed bragg reflector (DBR) may improve optical efficiency and/or reflectivity of the system. The process of fabricating such a die has an improved workflow that may decrease the number of steps and/or masks used, such as by simultaneously depositing and/or patterning one or more structures in the die which may conventionally require more than one step. In this way, the luminous flux of the completed die is improved while the cost of production is decreased.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A compact LED package has a segmented semiconductor structure that may emit light and at least two wavelength converting structures absorbing the emitted light to emit their own light. One of the wavelength converting structures may emit infrared (IR) or near-infrared (NIR) light, e.g., for IR sensing functions, while the other may emit visible light. The wavelength converting structures may be ceramic platelets coupled to each other. The segments of the semiconductor structure may be individually addressable, and the segmented semiconductor structure may allow for a reduction of package size compared to conventional LED packages.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
53.
LIGHT-EMITTING DIODE WITH SPECTRALLY SELECTIVE OPTICAL ELEMENT
A light-emitting device includes red InGaN-based LED(s), green III-nitride-based LED(s), and blue III-nitride-based LED(s), which respectively emit red emitted light, green emitted light, and blue emitted light. Spectrally selective optical element(s), on which at least the red emitted light is incident, result in red output light having a red output color point, green output light having a green output color point, and blue output light having a blue output color point. The red, green, and blue output color points define a color gamut that encompasses at least an sRGB color gamut, in some examples even when corresponding color points of the red, green, and blue emitted light do not.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
54.
LIGHT-EMITTING DEVICE WITH CENTRAL ELECTRODE AND OPTICAL CAVITY
A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The active layer extend to the side surfaces of the LED; the anode contact is on a central area of the p-doped layer and leaves peripheral regions without direct electrical coupling to the anode contact, reducing non-radiative recombination at the side surfaces. The LED can include a front reflector with a central opening aligned with the anode contact. The LED can include front, side, and back reflectors to form an optical cavity enclosing the n- and p-doped semiconductor layers and the active layer. At least a portion of the central opening is positioned opposite at least a portion of the central area of the anode contact surface.
H10H 20/855 - Optical field-shaping means, e.g. lenses
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
55.
PCLED LIGHT SOURCE AND SWIR SPECTROMETER FOR NONINVASIVE TISSUE GLUCOSE SELF-MONITORING
A glucose measurement device comprising a light emitting device comprising an SWIR phosphor having emission wavelengths in the range of 1600-2200 nm, the SWIR phosphor comprising a structurally disordered garnet material, a sensitizer ion, and at least one rare earth emitter ion, and a infrared light detector arranged to detect the intensity of short wavelength infrared light emitted by the light emitting device and reflected by a sample. The emission spectra provided by the light emitting device having a high temperature stability at infrared absorption minima and maxima wavelengths of glucose in tissue.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
56.
SEMI-SIMULTANEOUS DRIVING FOR MULTIJUNCTION POLYCHROMIC DEVICES
A lighting system and method of driving the array are disclosed. The array includes vertically-stacked polychromic devices having junctions that emit light of different colors. The junctions of each polychromic device along a particular row or column of the array are driven by simultaneously driving multiple separated junctions during one stage of a driving cycle and driving one or more junctions between the separated junctions during another stage of the driving cycle. The polychromic devices are driven by interleaving driving of the rows and columns of the array or by driving all of one of the rows or columns first and then driving all of the other of the rows or columns.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
shortlonglong) to obtain a second image (12); processing the first image (11) to extract foreground image data (5); processing the second image (12) to obtain background image data (4); and overlaying the foreground image data (4) onto the background image data (5) to obtain a final image (6). The invention further describes a camera control arrangement (1) configured to perform the steps of the inventive method, and a camera arrangement (1) comprising such a camera control arrangement (1).
H04N 23/56 - Cameras or camera modules comprising electronic image sensorsControl thereof provided with illuminating means
H04N 23/45 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
58.
SEMI-SIMULTANEOUS DRIVING FOR MULTIJUNCTION POLYCHROMIC DEVICES
A lighting system and method of driving the array are disclosed. The array includes vertically-stacked polychromic devices having junctions that emit light of different colors. The junctions of each polychromic device along a particular row or column of the array are driven by simultaneously driving multiple separated junctions during one stage of a driving cycle and driving one or more junctions between the separated junctions during another stage of the driving cycle. The polychromic devices are driven by interleaving driving of the rows and columns of the array or by driving all of one of the rows or columns first and then driving all of the other of the rows or columns.
Provided is a phosphor converted LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions are separated by a tunnel junction. One multiple quantum well is embedded between the n- and p-layers of the first junction and another multiple quantum well is embedded between the n- and p-layers of the second junction. The peak emission wavelengths of the two junctions are both between 400 nm and 500 nm and are at least 5 nm apart.
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
A lighting system and method of driving an array within the lighting system are disclosed. The array includes vertically-stacked multi-color micro light-emitting diode (microLED) devices that emit light of different colors. Driving circuits and a ground switching circuit are controlled by processing circuitry to sequentially emit the colors of each microLED by independently driving pn junctions of the microLED. Each driving circuit includes multiplexers to receive a sink/source current and selectably provide the sink/source current to a channel based on control signals from the processing circuitry. Dimming of a particular color is effected using a pulse width modulated (PWM) signal to adjust a duty cycle over which the sink/source current is applied to the channel. The ground switching circuit selects another channel using multiplexers, and grounds the channel such that current is limited to flowing through one of the pn junctions at a time.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
61.
DIAGONAL FOOTPRINT DESIGN ENABLING CLOSE PACKED LED ARRAYS
A light emitting diode assembly is provided herein. The light emitting diode assembly includes a first electrical contact and a second electrical contact. The first electrical contact includes an anode and is disposed at a first corner of the light emitting diode assembly. The second electrical contact includes a cathode and is disposed at a second corner of the light emitting diode assembly. The second corner is opposite the first corner. The light emitting diode assembly includes a thermal pad enabling a dissipation of heat from the light emitting diode assembly.
A glare free LED retrofit lamp, automotive lighting system and method of assembly are described herein. The glare free LED retrofit lamp includes a referencing ring and a lamp body at least partially in an opening in the referencing ring. A first LED is disposed on a first surface of the lamp body, and a second LED is disposed on a second surface of the lamp body opposite the first surface. The first LED is configured to emit light having a higher color temperature when powered on than light emitted by the second LED when powered on.
F21S 41/19 - Attachment of light sources or lamp holders
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21S 45/48 - Passive cooling, e.g. using fins, thermal conductive elements or openings with means for conducting heat from the inside to the outside of the lighting devices, e.g. with fins on the outer surface of the lighting device
63.
GLARE FREE LED RETROFIT LAMP, AUTOMOTIVE LIGHTING SYSTEM, AND METHOD OF ASSEMBLY
A glare free LED retrofit lamp (300), automotive lighting system (700) and method of assembly are described herein. The glare free LED retrofit lamp (300) includes a referencing ring (330) and a lamp body (340) at least partially in an opening in the referencing ring (330). A first LED (560) is disposed on a first surface of the lamp body, and a second LED (660) is disposed on a second surface of the lamp body opposite the first surface. The first LED (560) is configured to emit light having a higher color temperature when powered on than light emitted by the second LED (660) when powered on.
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
64.
LIGHT EMITTING DIODE RETROFIT WITH DYNAMIC SEQUENTIAL ILLUMINATION OF INDIVIDUAL LIGHT EMITTING DIODE CHIPS
According to one or more embodiments, a method for individually and sequentially illuminating light emitting diode groups of a light emitting diodes retrofit device is provided. The method includes energizing a first light emitting diode group including light emitting diode upon an input signal voltage level exceeding a first threshold and monitoring the input signal voltage level with respect to subsequent thresholds. The method includes sequentially energizing subsequent light emitting diode groups based upon the input signal voltage level exceeding a corresponding threshold of the subsequent thresholds. Each of the subsequent light emitting diode groups including at least one light emitting diode. The energizing of the first light emitting diode group and the subsequent light emitting diode groups is the individually and sequentially illuminating that provides a dynamic effect.
H05B 45/48 - Details of LED load circuits with an active control inside an LED matrix having LEDs organised in strings and incorporating parallel shunting devices
H05B 47/155 - Coordinated control of two or more light sources
Described are light emitting diode (LED) arrays comprising a plurality of mesas defining pixels having sidewalls, each of the mesas comprising an epitaxial stack on a substrate. The epitaxial stack includes a first n-type layer on the substrate, a second n-type layer on the first n-type layer, an n-type confinement layer on the second n-type layer, an active region having an active region width on the n-type confinement layer, a p-type confinement layer on the active region, a second p-type layer on the p-type confinement layer. The n-type confinement layer and the p-type confinement layer independently have a width less than the active region.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
C25D 13/02 - Electrophoretic coating characterised by the process with inorganic material
A method of preparing a converter layer comprises: conducting electrophoresis to deposit particles of a converter material in a suspension composition onto a thin non-conductive substrate to prepare a first intermediate structure; and fixing the particles of the converter material with a binder material and/or an inorganic coating to prepare the converter layer. A converter component for a light emitting diode (LED) comprises: a converter layer comprising: electrophoretically-deposited converter particles in combination with one or more or the following: a binder material; an inorganic coating of the converter particles, and the binder material when present; and a filler material.
C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
C25D 13/02 - Electrophoretic coating characterised by the process with inorganic material
A fine pitch LED array, automotive lighting system and method of manufacture are described herein. An LED lighting system includes an array of rows and columns of LEDs with a spacing of less than 50 microns between adjacent LEDs in the array. The array includes at least 5 rows of LEDs. Multiple first conductive connectors electrically couple the LEDs in a first 4 rows of the 5 rows in series. Multiple second conductive connectors electrically couple LEDs in the fifth row of the 5 rows to LEDs in the fourth row of the 5 rows in parallel.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
B60L 1/00 - Supplying electric power to auxiliary equipment of electrically-propelled vehicles
A flexible foil printed circuit board substrate is provided. The flexible foil printed circuit board substrate includes at least first and second lands and a flex foil area between pairs of the at least first and second lands. Each of the first and second lands can receive a placement of one or more surface mounting technology components. The flex foil area can include at least two layers including conductive portions connecting the at least first and second lands. The flex foil area can include one or more curved shapes. Outermost ends of the flex foil area can be integrated into the at least first and second lands.
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
F21Y 103/10 - Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
F21Y 107/70 - Light sources with three-dimensionally disposed light-generating elements on flexible or deformable supports or substrates, e.g. for changing the light source into a desired form
A flexible foil printed circuit board substrate is provided. The flexible foil printed circuit board substrate includes at least first and second lands and a flex foil area between pairs of the at least first and second lands. Each of the first and second lands can receive a placement of one or more surface mounting technology components. The flex foil area can include at least two layers including conductive portions connecting the at least first and second lands. The flex foil area can include one or more curved shapes. Outermost ends of the flex foil area can be integrated into the at least first and second lands.
Lighting devices and systems with dual color flexible foil PCBA and methods of manufacture are described. A lighting device includes at least two vertically stacked metal layers and multiple contact lines. A respective one of the electrical contact lines is disposed in one of the metal layers. At least two interposers are spaced apart along a horizontal direction of the metal layers. A first LED is on each of the interposers. The first LEDs emit a first color light when powered on. A second LED is on each of the interposers, spaced apart from the first LED in a direction perpendicular to the horizontal direction of the metal layers. The second LEDs emit a second color light different than the first color when powered on. The first and second LEDs are electrically coupled to at least two of the electrical contact lines.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
72.
DUAL COLOR FLEXIBLE LIGHT SOURCE, SYSTEMS AND METHODS OF MANUFACTURE
Lighting devices, systems and method of manufacture are described here. A lighting device includes at least one substrate and at least one pair of diodes on the at least one substrate. A first and second diode in each of the pairs are electrically coupled together in an antiparallel configuration. At least the first diode in each of the pairs is an LED. The lighting device also includes at least two electrical contact lines, which may power at least the first diode in each of the pairs via a drive current. The first diode in each of the pairs is powered on by the drive current forward biasing the first diode and reverse biasing the second diode and is powered off by the drive current reverse biasing the first diode and forward biasing the second diode.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A flexible foil printed circuit board substrate is provided. The flexible foil printed circuit board substrate includes lands and flexible foil areas between pairs of the lands. Each land can receive a placement of one or more surface mounting technology components. Each of the flexible foil areas can include bent sections. The bent sections can be joined at ends of inner and outer boarders. The bent sections can include curved shapes that in combination enable each of the flexible foil areas to mimic a winding river shape.
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
F21Y 103/10 - Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
F21Y 107/70 - Light sources with three-dimensionally disposed light-generating elements on flexible or deformable supports or substrates, e.g. for changing the light source into a desired form
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
74.
COMPACT LED RETROFIT AND ADJUSTABLE CENTERING RING
A referencing ring (430), LRF light source (490) and method of assembling an LRF light source (490) are described. A referencing ring (430) includes a disk-shaped member with an opening formed in a middle of the disk-shaped member. The opening has a circumference. At least one chamfered slot (480) is formed in the disk-shaped member. The at least one slot (480) extends along the circumference of the opening a discrete number of degrees less than or equal to 360°.
F21S 41/19 - Attachment of light sources or lamp holders
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
F21K 9/235 - Details of bases or caps, i.e. the parts that connect the light source to a fittingArrangement of components within bases or caps
A light guide holder and referencing system (100) is provided. The light guide holder and referencing system (100) includes a fastener (140, 240), a headlamp mounting feature (130, 230), and a light emitting diode module (120, 220). The light guide holder and referencing system (100) includes a mounting plate (111, 210) fixed by the fastener (140, 240) between the headlamp mounting feature (130) and the light emitting diode module (120, 220). The light guide holder and referencing system (100) includes a light guide (210) extending from the mounting plate (111, 210) and aligned with at least one light emitting diode of the light emitting diode module (120, 220).
A light emitting diode (LED) array, illumination device, and method of operating the LED array are described. The illumination device includes the LED array with LEDs. Drivers drive different sets of the LEDs. Each driver drives the LEDs of an associated set in parallel to produce light. The light from at least one of the LEDs has a different radiance from the light from at least one other of the LEDs. A processor controls the drivers to drive the sets of LEDs via driver channels to achieve a targeted illumination from the LED array. The radiance is varied using different reflectors, tile resistances, and/or eVias having different diameters and/or spatial densities.
An illumination device, system, and method of fabricating the device are described. The device includes a light emitting diode (LED) structure having an LED that emits blue light. A phosphor layer of the LED structure partially absorbs a portion of the blue light and emits near infrared light. A plate that is separated from the LED structure absorbs the blue light and transmits the near infrared light. The plate heats up due to absorption of the blue light and emits blackbody radiation with a peak emission larger than the near infrared light. The plate is separated by an air gap or using a non-conductive layer. For a portable spectroscopic device, one or more sensors detect the emitted light impinging on a target.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A light module for an automotive headlamp and a method of assembling the light module are disclosed. The light module includes a heatsink, a printed circuit board assembly, and a light-emitting diode (LED) assembly. The printed circuit board assembly is coupled to the heatsink, and the printed circuit board assembly includes a connector electrically coupled to the printed circuit board assembly. The light-emitting diode (LED) assembly is coupled to the heatsink, and the light-emitting diode (LED) assembly is electrically coupled to the printed circuit board assembly. The light-emitting diode (LED) assembly includes an interposer, at least one light-emitting diode (LED) coupled to the interposer, and at least one electrical contact coupled to the interposer. The interposer is coupled to the heatsink through an adhesive connection.
A light emitting diode (LED) array and method of fabricating the LED array are described. The LED array has trapezoidal pixels of microLEDs. Each pixel contains an epitaxial LED structure with n-type and p-type semiconductor layers, and an active region configured to emit light through the p-type layer. Sidewalls of the pixels extend at an angle of about 20° from a growth direction of the layers. A transparent conducting oxide (TCO) layer is on the p-type layer and a patterned periodic nanostructure is on the TCO layer.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
An LED driver architecture for vehicular and other applications and method of fabricating the LED and driver architecture are described. LED arrays are coupled in parallel to backlight unit (BLU) drivers and to a boost converter to provide a constant voltage to the LED arrays. Data from a Controller Area Network (CAN) bus suppled to the BLU drivers drives the LED arrays. Hybrid driving of low-dropout (LDO) voltage current sources permits individual control of a current and on/off time of an LED coupled to the LDO voltage current source. A vertical synchronization (VSYNC) pulse resets row/column logic of the LED arrays between frames. Each LED array comprises a segmented LED die having epitaxial semiconductor layers separated by trenches filled with a dielectric.
H05B 45/345 - Current stabilisationMaintaining constant current
H05B 45/46 - Details of LED load circuits with an active control inside an LED matrix having LEDs disposed in parallel lines
B60Q 1/14 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights having dimming means
F21S 41/151 - Light emitting diodes [LED] arranged in one or more lines
H05B 47/18 - Controlling the light source by remote control via data-bus transmission
H05B 45/38 - Switched mode power supply [SMPS] using boost topology
An illumination system and method of enhancing contrast are described. A light emitting diode (LED) array is controlled to provide a substantially constant background illumination over an area other than a target area prior to adjusting driving of LEDs in the LED array. The constant background illumination is obtained by driving the associated LEDs using a non-zero driving current substantially less than that used to drive LEDs associated with the target area. Once an area of enhanced contrast is determined, the LEDs providing illumination to the enhanced contrast area are no longer driven, while driving of the other LEDs remains constant.
H05B 45/10 - Controlling the intensity of the light
H05B 45/12 - Controlling the intensity of the light using optical feedback
H05B 47/125 - Controlling the light source in response to determined parameters by determining the presence or movement of objects or living beings by using cameras
A monolithic segmented light emitting diode (LED) array of a mobile device and method of operating the LED array are described. A torch mode is activated to illuminate a scene. A determination is made as to whether light from the torch mode used to illuminate a detected, for example, human face exceeds a standard safety limit. A processor uses a trained artificial intelligence (AI)/machine learning (ML) model to determine whether light from the LED array illuminates the face in the scene when the mobile device is in the torch mode. If so, the processor may control a driver to reduce light from at least some of LEDs of the LED array.
H05B 45/12 - Controlling the intensity of the light using optical feedback
G03B 15/00 - Special procedures for taking photographsApparatus therefor
G03B 15/05 - Combinations of cameras with electronic flash apparatusElectronic flash units
H04N 23/00 - Cameras or camera modules comprising electronic image sensorsControl thereof
H04N 23/56 - Cameras or camera modules comprising electronic image sensorsControl thereof provided with illuminating means
H05B 47/125 - Controlling the light source in response to determined parameters by determining the presence or movement of objects or living beings by using cameras
A high-power LED array driven at greater than about 6V for vehicular applications and methods of fabricating the LED array are described. A mirror is disposed on n- and p-semiconductor layers. A dielectric spacer is disposed between the p-semiconductor and the mirror. A hard mask is deposited on the dielectric spacer and has openings with a conductor to the mirror. Dielectric layers are deposited on the hard mask. Bonding layers formed on the dielectric layers connect to the semiconductors. Trenches extend through the semiconductors to form series- connected pixels. A dielectric spacer layer stack is disposed on the sidewalls of the trenches to form a Bragg reflector. A redistribution dielectric (RDL) layer is disposed on the bonding layers. Under Bump Metallurgy (UBM) pads deposited on the RDL layer are coupled to a bonding layer of the first pixel and the last pixel via the openings in the RDL layer.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
84.
METHOD FOR ASSEMBLING A HEADLAMP LIGHT MODULE UNDER LIMITED ASSEMBLING SPACE CONDITIONS, HEADLAMP LIGHT MODULE, AND ASSEMBLY
A light module assembly (10) for an automotive headlamp and a method of assembling the light module assembly (10) are disclosed. The light module assembly includes a reflector (12), a light module (14), a resilient element (16, 16'), and a fastener (18). The reflector (12) includes an upper surface (28), a rear surface (26), and a first protrusion (30) extending away from the rear surface (26). The light module (14) is positioned adjacent the reflector (12), such that a lower surface of the light module (14) abuts the upper surface (28) of the reflector (12). The light module includes a body (40) and an aperture (46) extending through the body (40). The resilient element (16, 16') abuts the first protrusion (30) of the reflector (12) and extends through the aperture (46) of the light module (14). The resilient element (16, 16') includes a fastener aperture (54, 54') extending through the resilient element (16, 16'). The fastener (18) extends through the fastener aperture (54, 54') of the resilient element and is coupled to the first protrusion (30) of the reflector (12).
A method for producing a photoemitting or photoreceiving diode includes producing, on a first substrate, first and second semiconductor layers with opposite dopings, and a third intrinsic semiconductor layer; etching trenches surrounding remaining portions of the second and third layers and of a first part of the first layer; and producing, in the trenches, a dielectric spacer covering side walls of said remaining portions. The method also includes etching to extend the trenches as far as the first substrate; laterally etching a part of the dielectric spacer, exposing contact surfaces of the second part of the first layer; and producing, in the trenches, a first electrode in contact with the contact surfaces of the second part of the first layer and with lateral flanks of the second part of the first layer.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A method of forming one or more transparent microLED light sources comprises preparing or obtaining a flexible transparent sheet on which are disposed a plurality of inorganic microLEDs and conductive paths configured to power the plurality of inorganic microLEDs, positioning a solid transparent sheet of adhesive between the flexible transparent sheet and a transparent substrate, and bonding the transparent sheet of adhesive to the flexible transparent sheet and to the transparent substrate to form a laminated structure. The conductive paths and the microLEDs are arranged to form at least one sparse microLED array.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A lighting device and method of manufacturing a lighting device that improves the efficiency of converting light output by a light emitting diode (LED) to near-infrared light (NIR). To improve the efficiency, light emitted by the LED passes through a first phosphor layer that emits NIR light, and then the light passes through a second phosphor layer that absorbs light not absorbed by the first layer to generate additional light. In some instances, the additional light is in the visible spectrum.
LED devices and methods of operating them are described. An LED lighting device includes a substrate (702), a white LED (402) on the substrate at a location configured for alignment with an optical axis of an automotive lamp when installed, and a near ultraviolet LED (404) on the substrate at a location spaced apart from the white LED by an amount such that the near ultraviolet LED is defocused from the optical axis of the automotive lamp when installed such that the near ultraviolet LED emits energy in the near ultraviolet band in a larger area than the white LED when powered on.
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
F21S 41/00 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
F21S 41/19 - Attachment of light sources or lamp holders
F21Y 113/13 - Combination of light sources of different colours comprising an assembly of point-like light sources
An LED lighting system, an LED module and a method of manufacture are described. An LED lighting system includes a ceramic interposer (314). Phosphor-converted SMD LEDs (312) are spaced apart on the ceramic interposer by less than 200 microns. Each of the LEDs includes a light-emitting top surface, a bottom surface opposite the light-emitting top surface, side surfaces, and a reflective side coating on at least one of the side surfaces that is adjacent another one of the LEDs on the ceramic interposer. A controller (308) is provided on a top surface of a PCB (306), which is configured to control the LEDs to be powered ON and OFF individually or in groups when the LED lighting system is powered on. Conductive connectors (310) are electrically coupled between the top surface of the PCB (306) and the top surface of the ceramic interposer (314).
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
F21Y 105/10 - Planar light sources comprising a two-dimensional array of point-like light-generating elements
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
90.
WAVELENGTH CONVERTER WITH STEPPED-INDEX ANTI-REFLECTION LAYERS
A light-emitting apparatus includes a luminescent structure and a stepped-index structure, and can further include an LED. The luminescent structure absorbs light at an excitation wavelength and emits light at one or more emission wavelengths longer than the excitation wavelength. The stepped-index structure is a stack of multiple transparent layers positioned between and in contact with an ambient medium and the luminescent structure, with corresponding refractive indices lower than the refractive index of the luminescent structure, higher than the refractive index of the ambient medium, and monotonically decreasing from the luminescent structure toward the ambient medium. The LED can be positioned with its light-emitting surface facing the surface of the luminescent structure opposite the stepped-index structure. The stepped-index structure can increase transmission of light from the luminescent structure into the ambient medium.
Adaptive illumination of a scene is controlled by the gaze of a user viewing the scene directly or viewing an image of the scene captured by a camera and displayed to the user.
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
A61B 1/06 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopesIlluminating arrangements therefor with illuminating arrangements
G02B 27/00 - Optical systems or apparatus not provided for by any of the groups ,
A metalens and a light source including the metalens are disclosed, the metalens having an area of over 1 mm and a metasurface configured to increase transmission by avoiding Mie resonances at wavelengths of light received by the metalens.
A light source comprises microLEDs of two or more colors in combination with a shared microlens, arranged to compensate for chromatic aberration of the microlens by placing the microLEDs at different distances from the microlens. The microLEDs that emit shorter wavelength light are placed closer to the microlens than the microLEDs that emit longer wavelengths of light. A display comprises a microlens array and a plurality of pixels, with each pixel paired with one of the microlenses and the microLEDs within a pixel arranged to compensate for chromatic aberration of the pixels lens. The inventor has recognized that the focal length of a microlens for blue light may differ from that for red light by approximately the same magnitude as the thickness of a microLED epitaxial structure. Hence the variation in distances required to achieve compensation for chromatic aberration of the microlens may be readily achieved in the fabrication of a microLED array.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A method for enabling self-aligning light-emitting diodes is provided. The method includes printing a die architecture including solders having a bond line thickness according to a printed circuit board design and placing light-emitting diodes in corresponding placement positions onto the solders. The method includes implementing a reflow process that includes a self-alignment effect for the light-emitting diodes. The self-alignment effect comprises creating surface tension forces while the solders are molten that pull or hold the light-emitting diodes to or at final positions.
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having a sidewall, the mesa including an n-type layer, an active region, and a p-type layer; a first dielectric material surrounding the sidewall of the pixel; a current spreading layer in contact with one or more n-contact materials and the n-type layer; an optical coating disposed on the current spreading layer, the optical coating comprising a second dielectric material; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
96.
PATTERNED PIXELS OF MICRO-LIGHT EMITTING DIODES (uLEDS) AND DIES
A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having sidewall, the mesa including an n-type layer, an active region, and a p-type layer; a patterned feature in the mesa defined by an absence of an epitaxial material from the mesa; a first dielectric material surrounding the sidewall of the pixel; one or more n-contact materials and a common cathode in electrical contact with the n-type layer; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
This specification discloses a light emitting devices with electrical pads improving performance. The electrical pads are disposed under the dies to prevent hot spots from occurring, particularly under the peak luminance areas of shaped luminance dies. The electrical pads may have asymmetric n and p areas, with the larger of the areas being disposed under the peak luminance area while the gap between the n and p areas do not overlap the peak luminance area. The electrical pads of different dies are bridged by horizontal or diagonal connections between the dies.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
98.
ADAPTIVE ILLUMINATOR FOR HEAD-MOUNTED DISPLAYS (HMDS)
Various embodiments include apparatuses and methods for providing adaptive illumination to portions of an eye-box in which an eye-pupil is located. In one example, an apparatus is disclosed that includes a light-emitting diode (LED) array having a plurality of LEDs with each of the plurality of LEDs being individually addressable in subsets of the LED array, a collimating element located between the LED array and the eye-box, a display device to generate images, and an eyepiece to receive light from at least one of the plurality of LEDs within the subset of the LED array and to project the images generated by the display device toward a location of the eye-pupil within a volume of the eye-box. Other apparatuses and methods are described.
Lighting modules combining top-contact LEDs and surface mount LEDs are described. The top-contact LEDs are mounted directly to a heat sink and are electrically connected by ultrasonically bonded conductors to a PCB containing the surface mount LEDs. The modules may also comprise a lens assembly configured to combine light emitted by the top contact LEDs and the surface mount LEDs into a composite beam.
An illumination device is provided in which polarized light is waveguided to sidewalls of a light emitting diode (LED) chip. The LED chip has a polygonal shape to increase internal reflection to enhance light emission efficiency from the exit surface and to enlarge an area of the exit surface and reduce internal light absorption. Reflective material is disposed on surfaces other than the sidewalls. At least one reflector specularly reflects the polarized light from at least one of the sidewalls towards a common direction. Fins etched in a semiconductor stack allow the light to exit a top of the fins. A reflective material may be provided on the semiconductor stack adjacent to the fins.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
