A glucose measurement device comprising a light emitting device comprising an SWIR phosphor having emission wavelengths in the range of 1600-2200 nm, the SWIR phosphor comprising a structurally disordered garnet material, a sensitizer ion, and at least one rare earth emitter ion, and a infrared light detector arranged to detect the intensity of short wavelength infrared light emitted by the light emitting device and reflected by a sample. The emission spectra provided by the light emitting device having a high temperature stability at infrared absorption minima and maxima wavelengths of glucose in tissue.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
2.
LIGHT-EMITTING DEVICE WITH CENTRAL ELECTRODE AND OPTICAL CAVITY
A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The active layer extend to the side surfaces of the LED; the anode contact is on a central area of the p-doped layer and leaves peripheral regions without direct electrical coupling to the anode contact, reducing non-radiative recombination at the side surfaces. The LED can include a front reflector with a central opening aligned with the anode contact. The LED can include front, side, and back reflectors to form an optical cavity enclosing the n- and p-doped semiconductor layers and the active layer. At least a portion of the central opening is positioned opposite at least a portion of the central area of the anode contact surface.
H10H 20/855 - Optical field-shaping means, e.g. lenses
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
3.
SEMI-SIMULTANEOUS DRIVING FOR MULTIJUNCTION POLYCHROMIC DEVICES
A lighting system and method of driving the array are disclosed. The array includes vertically-stacked polychromic devices having junctions that emit light of different colors. The junctions of each polychromic device along a particular row or column of the array are driven by simultaneously driving multiple separated junctions during one stage of a driving cycle and driving one or more junctions between the separated junctions during another stage of the driving cycle. The polychromic devices are driven by interleaving driving of the rows and columns of the array or by driving all of one of the rows or columns first and then driving all of the other of the rows or columns.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
shortlonglong) to obtain a second image (12); processing the first image (11) to extract foreground image data (5); processing the second image (12) to obtain background image data (4); and overlaying the foreground image data (4) onto the background image data (5) to obtain a final image (6). The invention further describes a camera control arrangement (1) configured to perform the steps of the inventive method, and a camera arrangement (1) comprising such a camera control arrangement (1).
H04N 23/56 - Cameras or camera modules comprising electronic image sensorsControl thereof provided with illuminating means
H04N 23/45 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
5.
SEMI-SIMULTANEOUS DRIVING FOR MULTIJUNCTION POLYCHROMIC DEVICES
A lighting system and method of driving the array are disclosed. The array includes vertically-stacked polychromic devices having junctions that emit light of different colors. The junctions of each polychromic device along a particular row or column of the array are driven by simultaneously driving multiple separated junctions during one stage of a driving cycle and driving one or more junctions between the separated junctions during another stage of the driving cycle. The polychromic devices are driven by interleaving driving of the rows and columns of the array or by driving all of one of the rows or columns first and then driving all of the other of the rows or columns.
In an authentication system, a housing can receive an optical data signal, such as a camera flash, from a user device, such as a smart phone. The optical data signal can include a plurality of beams propagating at different propagation angles from one another. At least one of the beams can include temporal modulation that corresponds to data. A lens disposed on or in the housing can at least partially focus the optical data signal onto a multi-pixel sensor such that the beams are at least partially focused onto different locations on the sensor. The sensor can produce an electrical data signal in response to the optical data signal. A controller can obtain the data from the electrical data signal, compare the data to reference data, determine that the data matches the reference data, and produce an authentication signal that indicates that the data matches the reference data.
G06K 7/14 - Methods or arrangements for sensing record carriers by electromagnetic radiation, e.g. optical sensingMethods or arrangements for sensing record carriers by corpuscular radiation using light without selection of wavelength, e.g. sensing reflected white light
7.
TUNNEL JUNCTION CASCADE LED WITH DIFFERENT PUMP WAVELENGTHS
Provided is a phosphor converted LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions are separated by a tunnel junction. One multiple quantum well is embedded between the n- and p-layers of the first junction and another multiple quantum well is embedded between the n- and p-layers of the second junction. The peak emission wavelengths of the two junctions are both between 400 nm and 500 nm and are at least 5 nm apart.
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
A lighting system and method of driving an array within the lighting system are disclosed. The array includes vertically-stacked multi-color micro light-emitting diode (microLED) devices that emit light of different colors. Driving circuits and a ground switching circuit are controlled by processing circuitry to sequentially emit the colors of each microLED by independently driving pn junctions of the microLED. Each driving circuit includes multiplexers to receive a sink/source current and selectably provide the sink/source current to a channel based on control signals from the processing circuitry. Dimming of a particular color is effected using a pulse width modulated (PWM) signal to adjust a duty cycle over which the sink/source current is applied to the channel. The ground switching circuit selects another channel using multiplexers, and grounds the channel such that current is limited to flowing through one of the pn junctions at a time.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
9.
TUNNEL-JUNCTION CASCADE LED WITH DIFFERENT PUMP WAVELENGTHS
Provided is a phosphor converted LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions are separated by a tunnel junction. One multiple quantum well is embedded between the n- and p-layers of the first junction and another multiple quantum well is embedded between the n- and p-layers of the second junction. The peak emission wavelengths of the two junctions are both between 400 nm and 500 nm and are at least 5 nm apart.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Light sources including one or more light emitting diodes (LEDs) comprise: a primary down converter material on the one or more LEDs; and a roughened down converter material on the one or more LEDs. The down converter material may comprise a polycrystalline ceramic plate of a phosphor material. A method of manufacturing a light source comprises: measuring a baseline color point distribution of a baseline light source, and a primary down converter material in the absence of any laser-modified down converter material; preparing a baseline color point distribution graph; identifying one or more sections of the primary down converter material whose corresponding LEDs contribute to deviating from a tuned color point distribution; and applying a roughening laser treatment to prepare one or more sections of roughened down converter material, and thereby prepare a light source having the tuned color point distribution.
Light sources including one or more light emitting diodes (LEDs) comprise a down converter material on the one or more LEDs; and a functional material that is laser-patterned on the down converter material. The functional material may be a distributed Bragg reflector (DBR). a dichroic filter (DCF), a ceramic material, or a powdered phosphor layer. The down converter material may comprise a polycrystalline ceramic plate of a phosphor material. A method of manufacturing a light source comprises: patterning a functional material of a light source comprising one or more light emitting diodes and a phosphor material.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A lighting system and method of driving an array within the lighting system are disclosed. The array includes vertically-stacked multi-color micro light-emitting diode (microLED) devices that emit light of different colors. Driving circuits and a ground switching circuit are controlled by processing circuitry to sequentially emit the colors of each microLED by independently driving pn junctions of the microLED. Each driving circuit includes multiplexers to receive a sink/source current and selectably provide the sink/source current to a channel based on control signals from the processing circuitry. Dimming of a particular color is effected using a pulse width modulated (PWM) signal to adjust a duty cycle over which the sink/source current is applied to the channel. The ground switching circuit selects another channel using multiplexers, and grounds the channel such that current is limited to flowing through one of the pn junctions at a time.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
A microlens array comprises an array of microlenses on a flat base. A spacer located along the periphery of the microlens array protrudes away from the plane of the base. The microlens array may be arranged in combination with one or more LEDs or pcLEDs with the spacer positioned between the microlens array and the LEDs or pcLEDs and thus spacing the microlenses away from the LED or pcLEDs. Arranged in this manner, the surface of the microlens array facing the LEDs or pcLEDs and light emitting surfaces of the LEDs or pcLEDs together define an air filled or evacuated gap between the microlens array and the LEDs or pcLEDs, which improves the performance of the microlens array in collimating or partially collimating light emitted by the LEDs or pcLEDs.
A light emitting diode assembly is provided herein. The light emitting diode assembly includes a first electrical contact and a second electrical contact. The first electrical contact includes an anode and is disposed at a first corner of the light emitting diode assembly. The second electrical contact includes a cathode and is disposed at a second corner of the light emitting diode assembly. The second corner is opposite the first corner. The light emitting diode assembly includes a thermal pad enabling a dissipation of heat from the light emitting diode assembly.
A glare free LED retrofit lamp, automotive lighting system and method of assembly are described herein. The glare free LED retrofit lamp includes a referencing ring and a lamp body at least partially in an opening in the referencing ring. A first LED is disposed on a first surface of the lamp body, and a second LED is disposed on a second surface of the lamp body opposite the first surface. The first LED is configured to emit light having a higher color temperature when powered on than light emitted by the second LED when powered on.
F21S 41/19 - Attachment of light sources or lamp holders
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21S 45/48 - Passive cooling, e.g. using fins, thermal conductive elements or openings with means for conducting heat from the inside to the outside of the lighting devices, e.g. with fins on the outer surface of the lighting device
16.
GLARE FREE LED RETROFIT LAMP, AUTOMOTIVE LIGHTING SYSTEM, AND METHOD OF ASSEMBLY
A glare free LED retrofit lamp (300), automotive lighting system (700) and method of assembly are described herein. The glare free LED retrofit lamp (300) includes a referencing ring (330) and a lamp body (340) at least partially in an opening in the referencing ring (330). A first LED (560) is disposed on a first surface of the lamp body, and a second LED (660) is disposed on a second surface of the lamp body opposite the first surface. The first LED (560) is configured to emit light having a higher color temperature when powered on than light emitted by the second LED (660) when powered on.
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
17.
ENGINEERED SCATTERING IN LED ENCAPSULANTS FOR TUNABLE OPTICAL FAR-FIELD RESPONSE
A light engine with distinct light sources sharing at least one optic may employ scattering particles to change the illuminance line profiles of one or more of the light sources so that they are more uniformly mixed in the far-field. The scattering particles may be integrated into phosphor layers of specific light sources or may be disposed in a separate layer. The scattering particles may be tunable based on the particular characteristics of the light source, such as their spectral characteristics or their chemical mixing characteristics.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
According to one or more embodiments, a method for individually and sequentially illuminating light emitting diode groups of a light emitting diodes retrofit device is provided. The method includes energizing a first light emitting diode group including light emitting diode upon an input signal voltage level exceeding a first threshold and monitoring the input signal voltage level with respect to subsequent thresholds. The method includes sequentially energizing subsequent light emitting diode groups based upon the input signal voltage level exceeding a corresponding threshold of the subsequent thresholds. Each of the subsequent light emitting diode groups including at least one light emitting diode. The energizing of the first light emitting diode group and the subsequent light emitting diode groups is the individually and sequentially illuminating that provides a dynamic effect.
H05B 45/48 - Details of LED load circuits with an active control inside an LED matrix having LEDs organised in strings and incorporating parallel shunting devices
H05B 47/155 - Coordinated control of two or more light sources
A phosphor layer is attached to an LED with increased precision. In particular, a phosphor ceramic is attached to an LED with glue. During the attachment process, the glue must be hardened and/or cured. The phosphor ceramic includes a hood that contains the glue in the hood as it hardens and/or is cured in order that the phosphor ceramic is properly aligned on the LED. The hood also improves the light extraction by capturing the light emitted from the sides of the LED.
Described are light emitting diode (LED) arrays comprising a plurality of mesas defining pixels having sidewalls, each of the mesas comprising an epitaxial stack on a substrate. The epitaxial stack includes a first n-type layer on the substrate, a second n-type layer on the first n-type layer, an n-type confinement layer on the second n-type layer, an active region having an active region width on the n-type confinement layer, a p-type confinement layer on the active region, a second p-type layer on the p-type confinement layer. The n-type confinement layer and the p-type confinement layer independently have a width less than the active region.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
C25D 13/02 - Electrophoretic coating characterised by the process with inorganic material
A method of preparing a converter layer comprises: conducting electrophoresis to deposit particles of a converter material in a suspension composition onto a thin non-conductive substrate to prepare a first intermediate structure; and fixing the particles of the converter material with a binder material and/or an inorganic coating to prepare the converter layer. A converter component for a light emitting diode (LED) comprises: a converter layer comprising: electrophoretically-deposited converter particles in combination with one or more or the following: a binder material; an inorganic coating of the converter particles, and the binder material when present; and a filler material.
C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
C25D 13/02 - Electrophoretic coating characterised by the process with inorganic material
This specification discloses spinel-type phosphors that may be advantageously employed in light sources for medical optical coherence tomography (OCT), light sources for medical OCT comprising such phosphors, and OCT systems comprising such light sources.
Light emitting devices comprise: one or more light emitting diode (LED) dies in a reflector cup; a first light-scattering layer contacting side surfaces of the LED dies, and a bottom wall and a sidewall of the reflector cup, the first light-scattering layer comprising light-scattering particles and a first binder material; and a second light-scattering layer contacting at least a top surface of the LED dies, and the first light-scattering layer at an interface, the second light-scattering layer comprising phosphor particles and a second binder material.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Micro-light emitting diode (uLED) devices comprise: a source wafer comprising a uLED die bonded to a target wafer. Wafer n-contacts are directly bonded to a plurality of die n-contacts; wafer p-contacts are directly bonded to die p-contacts; and wafer dielectric material is directly bonded to die dielectric material; the wafer dielectric material isolates the wafer n-contacts and the wafer p-contacts.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
Micro-light emitting diode (uLED) devices comprise: a plurality of micro-light emitting diodes (uLEDs), each of the uLEDs comprising: a pixel; an N-contact in contact with the pixel and having an N-contact top surface; a P-contact in contact with the pixel and having a P-contact top surface; an N-contact test pad on the N-contact top surface and having an N-contact test pad surface; and a P-contact test pad on the P-contact top surface and having a P-contact test pad surface; and a primary release layer positioned between all of the N-contacts and P-contacts of the uLEDs. Test apparatus and methods of making and testing the same are also provided.
Provided are optical transformer devices having a high power efficiency. The device architecture provides uniform current spreading to minimize efficiency droop. The quantum well designs are optimized for both light-emitting diode (LED) and photo diode (PD) operation. A low-loss optical cavity allows efficient transfer of light from the LED junction to the PD junction. The architecture provides a low-loss voltage up- and down-conversion and provides compatibility with production-grade epitaxial growth and wafer fabrication processes.
H01L 31/173 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
28.
Test Apparatus For Flip-Chip Micro-Light Emitting Diode (LED) Devices
Micro-light emitting diode (uLED) devices comprise: a plurality of micro-light emitting diodes (uLEDs), each of the uLEDs comprising: a pixel; an N-contact in contact with the pixel and having an N-contact top surface; a P-contact in contact with the pixel and having a P-contact top surface; an N-contact test pad on the N-contact top surface and having an N-contact test pad surface; and a P-contact test pad on the P-contact top surface and having a P-contact test pad surface; and a primary release layer positioned between all of the N-contacts and P-contacts of the uLEDs. Test apparatus and methods of making and testing the same are also provided.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
29.
FINE PITCH LED ARRAY WITH LARGER VERTICAL FIELD OF VIEW, AUTOMOTIVE LIGHTING SYSTEM AND METHOD OF MANUFACTURE
A fine pitch LED array, automotive lighting system and method of manufacture are described herein. An LED lighting system includes an array of rows and columns of LEDs with a spacing of less than 50 microns between adjacent LEDs in the array. The array includes at least 5 rows of LEDs. Multiple first conductive connectors electrically couple the LEDs in a first 4 rows of the 5 rows in series. Multiple second conductive connectors electrically couple LEDs in the fifth row of the 5 rows to LEDs in the fourth row of the 5 rows in parallel.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
B60L 1/00 - Supplying electric power to auxiliary equipment of electrically-propelled vehicles
A flexible foil printed circuit board substrate is provided. The flexible foil printed circuit board substrate includes at least first and second lands and a flex foil area between pairs of the at least first and second lands. Each of the first and second lands can receive a placement of one or more surface mounting technology components. The flex foil area can include at least two layers including conductive portions connecting the at least first and second lands. The flex foil area can include one or more curved shapes. Outermost ends of the flex foil area can be integrated into the at least first and second lands.
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
F21Y 103/10 - Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
F21Y 107/70 - Light sources with three-dimensionally disposed light-generating elements on flexible or deformable supports or substrates, e.g. for changing the light source into a desired form
A flexible foil printed circuit board substrate is provided. The flexible foil printed circuit board substrate includes at least first and second lands and a flex foil area between pairs of the at least first and second lands. Each of the first and second lands can receive a placement of one or more surface mounting technology components. The flex foil area can include at least two layers including conductive portions connecting the at least first and second lands. The flex foil area can include one or more curved shapes. Outermost ends of the flex foil area can be integrated into the at least first and second lands.
Lighting devices and systems with dual color flexible foil PCBA and methods of manufacture are described. A lighting device includes at least two vertically stacked metal layers and multiple contact lines. A respective one of the electrical contact lines is disposed in one of the metal layers. At least two interposers are spaced apart along a horizontal direction of the metal layers. A first LED is on each of the interposers. The first LEDs emit a first color light when powered on. A second LED is on each of the interposers, spaced apart from the first LED in a direction perpendicular to the horizontal direction of the metal layers. The second LEDs emit a second color light different than the first color when powered on. The first and second LEDs are electrically coupled to at least two of the electrical contact lines.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
33.
DUAL COLOR FLEXIBLE LIGHT SOURCE, SYSTEMS AND METHODS OF MANUFACTURE
Lighting devices, systems and method of manufacture are described here. A lighting device includes at least one substrate and at least one pair of diodes on the at least one substrate. A first and second diode in each of the pairs are electrically coupled together in an antiparallel configuration. At least the first diode in each of the pairs is an LED. The lighting device also includes at least two electrical contact lines, which may power at least the first diode in each of the pairs via a drive current. The first diode in each of the pairs is powered on by the drive current forward biasing the first diode and reverse biasing the second diode and is powered off by the drive current reverse biasing the first diode and forward biasing the second diode.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A flexible foil printed circuit board substrate is provided. The flexible foil printed circuit board substrate includes lands and flexible foil areas between pairs of the lands. Each land can receive a placement of one or more surface mounting technology components. Each of the flexible foil areas can include bent sections. The bent sections can be joined at ends of inner and outer boarders. The bent sections can include curved shapes that in combination enable each of the flexible foil areas to mimic a winding river shape.
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
F21Y 103/10 - Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
F21Y 107/70 - Light sources with three-dimensionally disposed light-generating elements on flexible or deformable supports or substrates, e.g. for changing the light source into a desired form
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
35.
Phosphor Layer With Improved High-Temperature Reliability For Phosphor Converted LEDS
Light emitting diode (LED) devices comprise: a stack of semiconductor layers including an active region and a phosphor layer on the semiconductor layers, the phosphor layer comprising: phosphor particles, a binder material, and polydisperse inorganic filler particles. a combined solid volume percentage of the phosphor particles and the polydisperse inorganic filler particles of greater than or equal to 70% and in some embodiments, less than or equal to 90%.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
36.
COMPACT LED RETROFIT AND ADJUSTABLE CENTERING RING
A referencing ring (430), LRF light source (490) and method of assembling an LRF light source (490) are described. A referencing ring (430) includes a disk-shaped member with an opening formed in a middle of the disk-shaped member. The opening has a circumference. At least one chamfered slot (480) is formed in the disk-shaped member. The at least one slot (480) extends along the circumference of the opening a discrete number of degrees less than or equal to 360°.
F21S 41/19 - Attachment of light sources or lamp holders
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
F21K 9/235 - Details of bases or caps, i.e. the parts that connect the light source to a fittingArrangement of components within bases or caps
A light guide holder and referencing system (100) is provided. The light guide holder and referencing system (100) includes a fastener (140, 240), a headlamp mounting feature (130, 230), and a light emitting diode module (120, 220). The light guide holder and referencing system (100) includes a mounting plate (111, 210) fixed by the fastener (140, 240) between the headlamp mounting feature (130) and the light emitting diode module (120, 220). The light guide holder and referencing system (100) includes a light guide (210) extending from the mounting plate (111, 210) and aligned with at least one light emitting diode of the light emitting diode module (120, 220).
A light emitting diode (LED) array, illumination device, and method of operating the LED array are described. The illumination device includes the LED array with LEDs. Drivers drive different sets of the LEDs. Each driver drives the LEDs of an associated set in parallel to produce light. The light from at least one of the LEDs has a different radiance from the light from at least one other of the LEDs. A processor controls the drivers to drive the sets of LEDs via driver channels to achieve a targeted illumination from the LED array. The radiance is varied using different reflectors, tile resistances, and/or eVias having different diameters and/or spatial densities.
An illumination device, system, and method of fabricating the device are described. The device includes a light emitting diode (LED) structure having an LED that emits blue light. A phosphor layer of the LED structure partially absorbs a portion of the blue light and emits near infrared light. A plate that is separated from the LED structure absorbs the blue light and transmits the near infrared light. The plate heats up due to absorption of the blue light and emits blackbody radiation with a peak emission larger than the near infrared light. The plate is separated by an air gap or using a non-conductive layer. For a portable spectroscopic device, one or more sensors detect the emitted light impinging on a target.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A light module for an automotive headlamp and a method of assembling the light module are disclosed. The light module includes a heatsink, a printed circuit board assembly, and a light-emitting diode (LED) assembly. The printed circuit board assembly is coupled to the heatsink, and the printed circuit board assembly includes a connector electrically coupled to the printed circuit board assembly. The light-emitting diode (LED) assembly is coupled to the heatsink, and the light-emitting diode (LED) assembly is electrically coupled to the printed circuit board assembly. The light-emitting diode (LED) assembly includes an interposer, at least one light-emitting diode (LED) coupled to the interposer, and at least one electrical contact coupled to the interposer. The interposer is coupled to the heatsink through an adhesive connection.
A light emitting diode (LED) array and method of fabricating the LED array are described. The LED array has trapezoidal pixels of microLEDs. Each pixel contains an epitaxial LED structure with n-type and p-type semiconductor layers, and an active region configured to emit light through the p-type layer. Sidewalls of the pixels extend at an angle of about 20° from a growth direction of the layers. A transparent conducting oxide (TCO) layer is on the p-type layer and a patterned periodic nanostructure is on the TCO layer.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
A method for depositing patterned phosphor films comprises using a patterned polymer film as a mask to block phosphor deposition, or allow subsequent removal of deposited phosphor, from selected areas of a device surface covered by the polymer film. The method generally comprises disposing the patterned polymer film mask on the device, subsequently depositing the phosphor, and then removing the mask and any phosphor deposited on the mask from the device. The polymer film may be deposited in the desired mask pattern or patterned after deposition.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
43.
ELECTRONIC DRIVE ARCHITECTURE USING BLU CONTROLLER AND SEGMENTED DIE
An LED driver architecture for vehicular and other applications and method of fabricating the LED and driver architecture are described. LED arrays are coupled in parallel to backlight unit (BLU) drivers and to a boost converter to provide a constant voltage to the LED arrays. Data from a Controller Area Network (CAN) bus suppled to the BLU drivers drives the LED arrays. Hybrid driving of low-dropout (LDO) voltage current sources permits individual control of a current and on/off time of an LED coupled to the LDO voltage current source. A vertical synchronization (VSYNC) pulse resets row/column logic of the LED arrays between frames. Each LED array comprises a segmented LED die having epitaxial semiconductor layers separated by trenches filled with a dielectric.
H05B 45/345 - Current stabilisationMaintaining constant current
H05B 45/46 - Details of LED load circuits with an active control inside an LED matrix having LEDs disposed in parallel lines
B60Q 1/14 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights having dimming means
F21S 41/151 - Light emitting diodes [LED] arranged in one or more lines
H05B 47/18 - Controlling the light source by remote control via data-bus transmission
H05B 45/38 - Switched mode power supply [SMPS] using boost topology
An illumination system and method of enhancing contrast are described. A light emitting diode (LED) array is controlled to provide a substantially constant background illumination over an area other than a target area prior to adjusting driving of LEDs in the LED array. The constant background illumination is obtained by driving the associated LEDs using a non-zero driving current substantially less than that used to drive LEDs associated with the target area. Once an area of enhanced contrast is determined, the LEDs providing illumination to the enhanced contrast area are no longer driven, while driving of the other LEDs remains constant.
H05B 45/10 - Controlling the intensity of the light
H05B 45/12 - Controlling the intensity of the light using optical feedback
H05B 47/125 - Controlling the light source in response to determined parameters by determining the presence or movement of objects or living beings by using cameras
A monolithic segmented light emitting diode (LED) array of a mobile device and method of operating the LED array are described. A torch mode is activated to illuminate a scene. A determination is made as to whether light from the torch mode used to illuminate a detected, for example, human face exceeds a standard safety limit. A processor uses a trained artificial intelligence (AI)/machine learning (ML) model to determine whether light from the LED array illuminates the face in the scene when the mobile device is in the torch mode. If so, the processor may control a driver to reduce light from at least some of LEDs of the LED array.
H05B 45/12 - Controlling the intensity of the light using optical feedback
G03B 15/00 - Special procedures for taking photographsApparatus therefor
G03B 15/05 - Combinations of cameras with electronic flash apparatusElectronic flash units
H04N 23/00 - Cameras or camera modules comprising electronic image sensorsControl thereof
H04N 23/56 - Cameras or camera modules comprising electronic image sensorsControl thereof provided with illuminating means
H05B 47/125 - Controlling the light source in response to determined parameters by determining the presence or movement of objects or living beings by using cameras
A high-power LED array driven at greater than about 6V for vehicular applications and methods of fabricating the LED array are described. A mirror is disposed on n- and p-semiconductor layers. A dielectric spacer is disposed between the p-semiconductor and the mirror. A hard mask is deposited on the dielectric spacer and has openings with a conductor to the mirror. Dielectric layers are deposited on the hard mask. Bonding layers formed on the dielectric layers connect to the semiconductors. Trenches extend through the semiconductors to form series- connected pixels. A dielectric spacer layer stack is disposed on the sidewalls of the trenches to form a Bragg reflector. A redistribution dielectric (RDL) layer is disposed on the bonding layers. Under Bump Metallurgy (UBM) pads deposited on the RDL layer are coupled to a bonding layer of the first pixel and the last pixel via the openings in the RDL layer.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
An LED lighting strip, method of manufacturing an LED lighting strip and an automotive lighting system are described. The LED lighting strip (100) includes at least two outer wires (12, 14), at least one central wire (15) between the two outer wires, LEDs (22) arranged along the LED lighting strip and electrically coupled at least to the at least two outer wires (12, 14), and an enclosing member (52) enclosing the at least two outer wires, the at one central wire and the LEDs. The at least two outer wires (12, 14) and the least one central wire (15) have a bend (51) in sections between at least some adjacent LEDs (22).
F21S 4/24 - Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports flexible or deformable, e.g. into a curved shape of ribbon or tape form, e.g. LED tapes
A structure and method of operating an optical step-up transformer are described. The optical step-up transformer has at least one photodiode and at least one photoreceiver. The photoreceiver receives light emitted from the photodiode and generates a voltage proportional to the number of series-connected photoreceivers. The photodiode and photoreceiver may be electrically isolated or may share a common anode or cathode. The voltage applied to the photodiode may be a DC or PWM signal.
G01R 15/22 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-emitting devices, e.g. LED, optocouplers
H02P 13/00 - Arrangements for controlling transformers, reactors or choke coils, for the purpose of obtaining a desired output
49.
LED MODULE FOR VEHICLE HEADLIGHT AND VEHICLE HEADLIGHT WITH SUCH LED MODULE
An LED module for a vehicle headlight and a vehicle headlight are described. The LED module includes an array of LEDs (22) and an optic (23) opposite the array of LEDs (22). The optic (23) is configured to receive light from the array of LEDs (22) and direct at least part of the received light. The optic (23) has a light passing area (24) configured to pass light directly from the array of LEDs.
F21S 41/153 - Light emitting diodes [LED] arranged in one or more lines arranged in a matrix
B60Q 1/04 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights
F21S 41/143 - Light emitting diodes [LED] the main emission direction of the LED being parallel to the optical axis of the illuminating device
F21S 41/20 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by refractors, transparent cover plates, light guides or filters
50.
METHOD FOR ASSEMBLING A HEADLAMP LIGHT MODULE UNDER LIMITED ASSEMBLING SPACE CONDITIONS, HEADLAMP LIGHT MODULE, AND ASSEMBLY
A light module assembly (10) for an automotive headlamp and a method of assembling the light module assembly (10) are disclosed. The light module assembly includes a reflector (12), a light module (14), a resilient element (16, 16'), and a fastener (18). The reflector (12) includes an upper surface (28), a rear surface (26), and a first protrusion (30) extending away from the rear surface (26). The light module (14) is positioned adjacent the reflector (12), such that a lower surface of the light module (14) abuts the upper surface (28) of the reflector (12). The light module includes a body (40) and an aperture (46) extending through the body (40). The resilient element (16, 16') abuts the first protrusion (30) of the reflector (12) and extends through the aperture (46) of the light module (14). The resilient element (16, 16') includes a fastener aperture (54, 54') extending through the resilient element (16, 16'). The fastener (18) extends through the fastener aperture (54, 54') of the resilient element and is coupled to the first protrusion (30) of the reflector (12).
A method for producing a photoemitting or photoreceiving diode includes producing, on a first substrate, first and second semiconductor layers with opposite dopings, and a third intrinsic semiconductor layer; etching trenches surrounding remaining portions of the second and third layers and of a first part of the first layer; and producing, in the trenches, a dielectric spacer covering side walls of said remaining portions. The method also includes etching to extend the trenches as far as the first substrate; laterally etching a part of the dielectric spacer, exposing contact surfaces of the second part of the first layer; and producing, in the trenches, a first electrode in contact with the contact surfaces of the second part of the first layer and with lateral flanks of the second part of the first layer.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A structure and method of operating micro-LEDs are described. The micro-LEDs are arranged in a micro-LED array and have random orientations, distributions, and positions within the array. A lens array includes micro-lenses configured to capture light from the micro-LEDs. The micro-LED array structure is calibrated by capturing light from each of the micro-LEDs at different times and determining characteristics of the light from each of the micro-LEDs. Once image data of an image to be generated by the micro-LED array is received, a combination of the micro-LEDs to activate to produce the image, as well as the characteristics for driving the individual micro-LEDs is determined. The micro-LEDs are then activated to produce the image.
A family of optionally substituted oxonitridoberyllosilicate photoluminescent compositions (i.e., phosphors) is characterized by the formula AE1−x−y−uAy+uBe1−y−z−vBy+z+vSi1−z AlzO1−vN2+v: Eux,Ceu, where AE=Ba, Sr, Ca, Mg; A=Li, Na, K, Rb; 0≤x≤0.1; 0≤ u≤0.1; 0<(x+u); 0≤y≤1; 0≤z≤1; (y+z+v)≤1; and (x+y+u)≤1. These phosphors may be used in phosphor converted LEDs which may be advantageously employed in illumination and display applications, for example.
A light emitting device comprises at least two semiconductor LEDs arranged in an array with each semiconductor LED comprising a light emitting surface with boundaries defined by a perimeter, a continuous layer comprising a first surface through which light is emitted from the light emitting device during operation and an oppositely positioned second surface disposed on or adjacent to the array and extending over the light emitting surfaces of the semiconductor LEDs, and a plurality of optical isolation structures arranged in the continuous layer in a discontinuous manner along the perimeters of the light emitting surfaces between adjacent LEDs in the array.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Optical filters are used to compensate for changes in LED and pcLED performance resulting from technological advances in device design or manufacturing, with for example the filtered optical output from later generation devices matching or substantially matching the optical performance of earlier generation legacy devices. This can allow the advanced generation devices to be substituted in applications previously supported by the legacy devices, even if the optical performance of the unfiltered advanced generation devices does not satisfy the optical performance specifications required by the application. Somewhat paradoxically, the advantages of using the filters in combination with the advanced generation devices may arise from the filters making the optical performance of the devices worse according to one or more figures of merit.
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
A phosphor layer includes phosphor particles and small typically non-luminescent particles, such as nanoparticles. The small particles improve adherence, coherence, and homogeneity of the phosphor layer by accumulating at contact points of the phosphor particles. Their diameter is smaller than those of the phosphor particles. The small particles may be co-deposited with the phosphor particles during electrophoretic deposition, increasing the formulation conductivity during deposition to increase transport speed. The small particles may be catalysts that aid in removal of organic material included in the electrophoretic deposition process.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
57.
Phosphor-converted light-emitting diode with dielectric spacer
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
Described are light emitting diode (LED) devices including a quantum well on a superlattice structure. The LED device has a dominant wavelength greater than 520 nm. The dominant wavelength changes less than 7 nm when the current density increases from 10 A/cm2 to 100 A/cm2 and a junction temperature of the device changes less than 20° C.
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
59.
Red LED With Low Forward Voltage, High Wall Plug Efficiency, And High Operating Current Density
Described are light emitting diode (LED) devices including a quantum well comprising an indium gallium nitride (InGaN) well and a barrier layer. The indium gallium nitride (InGaN) well has an indium concentration greater than 18% mole fraction. The LED device has a dominant wavelength greater than 605 nm at a current density of greater than or equal to 2 A/cm2.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
60.
PROCESSES FOR FABRICATING MICROLEDS ON TRANSPARENT BACKPLANE
A method of forming one or more transparent microLED light sources comprises providing a flexible transparent sheet on which are disposed a plurality of inorganic microLEDs and conductive paths configured to power the plurality of inorganic microLEDs, positioning a solid transparent sheet of adhesive between the flexible transparent sheet and a transparent substrate, and bonding the transparent sheet of adhesive to the flexible transparent sheet and to the transparent substrate to form a laminated structure. The conductive paths and the microLEDs are arranged to form at least one sparse microLED array.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A method of forming one or more transparent microLED light sources comprises preparing or obtaining a flexible transparent sheet on which are disposed a plurality of inorganic microLEDs and conductive paths configured to power the plurality of inorganic microLEDs, positioning a solid transparent sheet of adhesive between the flexible transparent sheet and a transparent substrate, and bonding the transparent sheet of adhesive to the flexible transparent sheet and to the transparent substrate to form a laminated structure. The conductive paths and the microLEDs are arranged to form at least one sparse microLED array.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A method of forming one or more transparent microLED light sources comprises preparing or obtaining a flexible transparent sheet on which are disposed a plurality of inorganic microLEDs and conductive paths configured to power the plurality of inorganic microLEDs, positioning a solid transparent sheet of adhesive between the flexible transparent sheet and a transparent substrate, and bonding the transparent sheet of adhesive to the flexible transparent sheet and to the transparent substrate to form a laminated structure. The conductive paths and the microLEDs are arranged to form at least one sparse microLED array.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
63.
LED DEVICE FORMATION USING RELEASABLE INORGANIC WAFER BOND
Methods of manufacturing a light emitting diode (LED) comprising bonding a transparent support wafer to a growth wafer are described. The transparent support wafer has a laser lift-off (LLO) release layer and inorganic bonding layer. The growth wafer has a matching inorganic bonding layer which is bonded to the inorganic bonding layer of the transparent support wafer. After processing, the LLO release layer is removed, separating the transparent support wafer and device wafer, and making the transparent support wafer available for reuse.
A lighting device and method of manufacturing a lighting device that improves the efficiency of converting light output by a light emitting diode (LED) to near-infrared light (NIR). To improve the efficiency, light emitted by the LED passes through a first phosphor layer that emits NIR light, and then the light passes through a second phosphor layer that absorbs light not absorbed by the first layer to generate additional light. In some instances, the additional light is in the visible spectrum.
This specification discloses LEDs, pcLEDs, and arrays of LEDs or pcLEDs in which the LEDs or pcLEDs comprise a structured high refractive index coating on a light output surface that improves light extraction from the device through the light output surface. The coating is formed additively instead of by a subtractive process that removes material from the surface, and consequently can avoid the disadvantages associated with subtractive processes.
A reflective layer for use in lighting devices and methods of forming the reflective layer are provided. The reflective layer may include a dielectric layer including one or more insulating materials. An intermediate layer may be formed on the dielectric layer. The intermediate layer may include one or more materials having a higher enthalpy of reaction than the one or more insulating materials. Because of the higher enthalpy of reaction, atoms of the one or more materials in the intermediate layer may form bonds with atoms of the one or more insulating materials. A metal layer may be formed on the intermediate layer to reflect light emitted from an active region of a light emitting diode (LED).
LED devices and methods of operating them are described. An LED lighting device includes a substrate (702), a white LED (402) on the substrate at a location configured for alignment with an optical axis of an automotive lamp when installed, and a near ultraviolet LED (404) on the substrate at a location spaced apart from the white LED by an amount such that the near ultraviolet LED is defocused from the optical axis of the automotive lamp when installed such that the near ultraviolet LED emits energy in the near ultraviolet band in a larger area than the white LED when powered on.
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
F21S 41/00 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
F21S 41/19 - Attachment of light sources or lamp holders
F21Y 113/13 - Combination of light sources of different colours comprising an assembly of point-like light sources
An LED lighting system, an LED module and a method of manufacture are described. An LED lighting system includes a ceramic interposer (314). Phosphor-converted SMD LEDs (312) are spaced apart on the ceramic interposer by less than 200 microns. Each of the LEDs includes a light-emitting top surface, a bottom surface opposite the light-emitting top surface, side surfaces, and a reflective side coating on at least one of the side surfaces that is adjacent another one of the LEDs on the ceramic interposer. A controller (308) is provided on a top surface of a PCB (306), which is configured to control the LEDs to be powered ON and OFF individually or in groups when the LED lighting system is powered on. Conductive connectors (310) are electrically coupled between the top surface of the PCB (306) and the top surface of the ceramic interposer (314).
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
F21Y 105/10 - Planar light sources comprising a two-dimensional array of point-like light-generating elements
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
69.
WAVELENGTH CONVERTER WITH STEPPED-INDEX ANTI-REFLECTION LAYERS
A light-emitting apparatus includes a luminescent structure and a stepped-index structure, and can further include an LED. The luminescent structure absorbs light at an excitation wavelength and emits light at one or more emission wavelengths longer than the excitation wavelength. The stepped-index structure is a stack of multiple transparent layers positioned between and in contact with an ambient medium and the luminescent structure, with corresponding refractive indices lower than the refractive index of the luminescent structure, higher than the refractive index of the ambient medium, and monotonically decreasing from the luminescent structure toward the ambient medium. The LED can be positioned with its light-emitting surface facing the surface of the luminescent structure opposite the stepped-index structure. The stepped-index structure can increase transmission of light from the luminescent structure into the ambient medium.
Adaptive illumination of a scene is controlled by the gaze of a user viewing the scene directly or viewing an image of the scene captured by a camera and displayed to the user.
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
A61B 1/06 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopesIlluminating arrangements therefor with illuminating arrangements
G02B 27/00 - Optical systems or apparatus not provided for by any of the groups ,
A method for enabling self-aligning light-emitting diodes is provided. The method includes printing a die architecture including solders having a bond line thickness according to a printed circuit board design and placing light-emitting diodes in corresponding placement positions onto the solders. The method includes implementing a reflow process that includes a self-alignment effect for the light-emitting diodes. The self-alignment effect comprises creating surface tension forces while the solders are molten that pull or hold the light-emitting diodes to or at final positions.
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 3/30 - Assembling printed circuits with electric components, e.g. with resistor
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
An optical system is provided. The optical system includes a light emitting diode that generates light emissions. The optical system includes a collimator that receives the light emissions and that generates a collimated beam. The optical system includes an etendue re-shaper that splits the collimated beam into beam parts and that arranges the beam parts adjacent to each other to generate an adjacent beam part arrangement. The optical system includes micro-lens arrays that receive the adjacent beam part arrangement and that generate beams. Each of the beams includes an optimum optical efficiency or a far field intensity distribution.
A metalens and a light source including the metalens are disclosed, the metalens having an area of over 1 mm and a metasurface configured to increase transmission by avoiding Mie resonances at wavelengths of light received by the metalens.
A light source comprises microLEDs of two or more colors in combination with a shared microlens, arranged to compensate for chromatic aberration of the microlens by placing the microLEDs at different distances from the microlens. The microLEDs that emit shorter wavelength light are placed closer to the microlens than the microLEDs that emit longer wavelengths of light. A display comprises a microlens array and a plurality of pixels, with each pixel paired with one of the microlenses and the microLEDs within a pixel arranged to compensate for chromatic aberration of the pixels lens. The inventor has recognized that the focal length of a microlens for blue light may differ from that for red light by approximately the same magnitude as the thickness of a microLED epitaxial structure. Hence the variation in distances required to achieve compensation for chromatic aberration of the microlens may be readily achieved in the fabrication of a microLED array.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A method for enabling self-aligning light-emitting diodes is provided. The method includes printing a die architecture including solders having a bond line thickness according to a printed circuit board design and placing light-emitting diodes in corresponding placement positions onto the solders. The method includes implementing a reflow process that includes a self-alignment effect for the light-emitting diodes. The self-alignment effect comprises creating surface tension forces while the solders are molten that pull or hold the light-emitting diodes to or at final positions.
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having a sidewall, the mesa including an n-type layer, an active region, and a p-type layer; a first dielectric material surrounding the sidewall of the pixel; a current spreading layer in contact with one or more n-contact materials and the n-type layer; an optical coating disposed on the current spreading layer, the optical coating comprising a second dielectric material; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
77.
PATTERNED PIXELS OF MICRO-LIGHT EMITTING DIODES (uLEDS) AND DIES
A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having sidewall, the mesa including an n-type layer, an active region, and a p-type layer; a patterned feature in the mesa defined by an absence of an epitaxial material from the mesa; a first dielectric material surrounding the sidewall of the pixel; one or more n-contact materials and a common cathode in electrical contact with the n-type layer; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
This specification discloses a light emitting devices with electrical pads improving performance. The electrical pads are disposed under the dies to prevent hot spots from occurring, particularly under the peak luminance areas of shaped luminance dies. The electrical pads may have asymmetric n and p areas, with the larger of the areas being disposed under the peak luminance area while the gap between the n and p areas do not overlap the peak luminance area. The electrical pads of different dies are bridged by horizontal or diagonal connections between the dies.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
79.
ADAPTIVE ILLUMINATOR FOR HEAD-MOUNTED DISPLAYS (HMDS)
Various embodiments include apparatuses and methods for providing adaptive illumination to portions of an eye-box in which an eye-pupil is located. In one example, an apparatus is disclosed that includes a light-emitting diode (LED) array having a plurality of LEDs with each of the plurality of LEDs being individually addressable in subsets of the LED array, a collimating element located between the LED array and the eye-box, a display device to generate images, and an eyepiece to receive light from at least one of the plurality of LEDs within the subset of the LED array and to project the images generated by the display device toward a location of the eye-pupil within a volume of the eye-box. Other apparatuses and methods are described.
Lighting modules combining top-contact LEDs and surface mount LEDs are described. The top-contact LEDs are mounted directly to a heat sink and are electrically connected by ultrasonically bonded conductors to a PCB containing the surface mount LEDs. The modules may also comprise a lens assembly configured to combine light emitted by the top contact LEDs and the surface mount LEDs into a composite beam.
An illumination device is provided in which polarized light is waveguided to sidewalls of a light emitting diode (LED) chip. The LED chip has a polygonal shape to increase internal reflection to enhance light emission efficiency from the exit surface and to enlarge an area of the exit surface and reduce internal light absorption. Reflective material is disposed on surfaces other than the sidewalls. At least one reflector specularly reflects the polarized light from at least one of the sidewalls towards a common direction. Fins etched in a semiconductor stack allow the light to exit a top of the fins. A reflective material may be provided on the semiconductor stack adjacent to the fins.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
An illumination device is provided to incorporate light extraction features in a micro-light emitting diode (microLED). The microLED contains a semiconductor stack that includes n-type and p-type semiconductors, and an active region therebetween. The microLED has an emitting surface from which light generated by the active region exits the microLED. The emitting surface has nanoscale patterned sapphire substrate (nanoPSS) features therein. The nanoPSS features have periodic frustoconical shapes each having a pitch of about 200 nm to about 500 nm, a height of about 200 nm to about 500 nm, and a spacing of about 20%. Metal sidewalls extend from the emitting surface to form a trench in which the microLED is disposed. The metal sidewalls extend at a trench angle less than about 9% with respect to a normal to the emitting surface and electrically contact the n-type semiconductor.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Embodiments are described in which an identification marking that is a patterned phosphor barcode, QR code or other emblem associated with an object is applied to the product or documents to thwart counterfeiting of visible light readable codes or emblems that identify genuine products or documents. In embodiments, thin layers of phosphor with a known particle size distribution and emission spectrum, are applied to the product in a unique pattern that may be a bar code, a QR code or another emblem uniquely identifying the product or manufacturer of the product. More than one phosphor type may be used in an emblem, further increasing the difficulty of counterfeiting the code or emblem and the object which bears the code or emblem.
G07D 7/0043 - Testing specially adapted to determine the identity or genuineness of valuable papers or for segregating those which are unacceptable, e.g. banknotes that are alien to a currency using digital security elements, e.g. information coded on a magnetic thread or strip using barcodes
A light-emitting array includes a semiconductor LED structure, multiple outcoupling structures, multiple independent first electrical contacts, and second electrical contact(s). The LED structure extends contiguously over the array. The second electrical contacts are in electrical contact with the second semiconductor layer. Each outcoupling structure is a protruding portion of the second semiconductor layer. Each first electrical contact includes a circumscribed electrode layer opposite a corresponding outcoupling structure. Each outcoupling structure and corresponding first electrical contact define a corresponding discrete, circumscribed pixel region within the contiguous area of the array, each pixel region separate from the others. Some light emitted in the pixel region is collected or redirected by the outcoupling structure to exit the outcoupling structure and propagate away from the array.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
An illumination apparatus is provided to correct for chromatic aberration. A light-emitting diode (LED) structure has multiple LED clusters and an optic associated with each cluster. Each cluster is disposed in a cavity in a different total internal reflectance (TIR) structure. Each cluster contains individual LEDs that are configured to emit light of a different color toward the optic. In each cluster: a center of at least one LED within the cluster is disposed at a different distance from a center of the cluster than a center of at least one other LED within the cluster dependent on a wavelength dependence of the optic. For each color, an average position of the LEDs configured to emit the color within the clusters and an average position of the LEDs configured to emit each other color within the clusters are identical.
F21K 9/00 - Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
F21Y 105/12 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the geometrical disposition of the light-generating elements, e.g. arranging light-generating elements in differing patterns or densities
F21Y 113/13 - Combination of light sources of different colours comprising an assembly of point-like light sources
F21Y 113/17 - Combination of light sources of different colours comprising an assembly of point-like light sources forming a single encapsulated light source
Devices, systems, and methods for light confinement in a sapphire substrate based light emitting diode (LED) are provided. A lighting apparatus include a segmented light emitting diode (LED), a sapphire substrate situated to receive light from respective segments of the segmented LED, and confinement structures in the sapphire substrate, the confinement structures configured to confine light emitted by a respective segment of the segments to within a footprint of the respective segment.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
87.
MODULAR DEVICE FOR ADDRESSABLE LIGHT EMITTING DIODE ARRAYS
According to one or more embodiments, a modular device is provided. The modular device includes light emitting diode elements. The modular device also includes transistors. Each of the light emitting diode elements are electrically coupled to a corresponding transistor of the transistors to provide a vertical integration between that light emitting diode and that corresponding transistor. The light emitting diode elements generate, based on the vertical integration, a light emitting area that covers a device area of the modular device.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A method for controlling light sources of a lighting system includes initializing a measurement device for measuring information in the lighting system. Photometric data is recorded at a first location, and the measurement records photometric data at a second location. Target illuminance in the system is set at the first and second locations, and flux values for lighting elements of the lighting system are calculated. Control parameters are transmitted based upon the flux for adjustment of the elements in the lighting system.
Light-emitting diode (LED) devices are described herein. An LED device includes a substrate. The substrate has a top surface and a bottom surface opposite the top surface. The bottom surface has at least one indentation that runs lengthwise across at least a portion of the substrate. The LED device also includes a semiconductor surface mounted device (SMD) over the top surface of the substrate.
F21S 41/148 - Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An optical system is provided. The optical system includes a light emitting diode that generates light emissions. The optical system includes a collimator that receives the light emissions and that generates a collimated beam. The optical system includes an etendue re-shaper that splits the collimated beam into beam parts and that arranges the beam parts adjacent to each other to generate an adjacent beam part arrangement. The optical system includes micro-lens arrays that receive the adjacent beam part arrangement and that generate beams. Each of the beams includes an optimum optical efficiency or a far field intensity distribution.
A transparent structure attached to a phosphor-converted LED (pcLED) is disclosed. The transparent structure increases total light output of the pcLED without further increasing the light emitting area of the phosphor layer which becomes challenging and unreliable for thin phosphor layers.
A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having a sidewall, the mesa including an n-type layer, an active region, and a p-type layer; a first dielectric material surrounding the sidewall of the pixel; a current spreading layer in contact with one or more n-contact materials and the n-type layer; an optical layer disposed on the current spreading layer, the optical layer comprising: an optical segment opposite the n-type layer and the first dielectric material, the optical segment comprising a second dielectric material, and a reflective sidewall adjacent to the optical segment and opposite portions of the one or more n-contact materials; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An inventive light-emitting array includes multiple semiconductor lightemitting diodes (LEDs). Each LED of the array includes first and second doped semiconductor layers and an active layer them, and emits light at a nominal emission vacuum wavelength 0 resulting from charge carrier recombination at the active layer. The active layer differs in chemical composition from the first and second semiconductor layers and is between 0.1 nm thick and 1 nm thick. Each LED exhibits a small-signal bandwidth greater than 0.10 GHz, in some instances at a nonzero current density less than 2000 A/cm2. In some instances the doped semiconductor layers can be p-doped and n-doped GaN layers, and the active layer can be a monolayer of a III-nitride compound, e.g., InGaN.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Light emitting diode (LED) arrays and dies and devices herein comprise: a plurality of pixels in electrical communication including a cathode per pixel and a common composite anode. Each pixel communicates to the common anode by a p-metal plug in a p-via, a p-metal layer, and p-contact materials.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
96.
SHAPED SURFACE LUMINANCE LED WITH ADJUSTABLE LUMINANCE GRADIENT
This specification discloses light emitting devices electrical contacts that improve performance and clarity to operators of the light emitting devices. A small number of electrical contacts includes two or three contacts that may be independent driven from one another to obtain a desired luminance profile. The forward voltage Vf and internal quantum efficiency (IQE) may be easily known with the devices and methods described in this specification, allowing for ease-ofuse combined with adaptability.
Discussed herein are devices, systems, and methods for sapphire substrate lighting devices with improved luminance. A segmented lighting apparatus includes a sapphire substrate, a patterned low refractive index material on the sapphire substrate, a photonic layer on the patterned low refractive index material, and a light-generating material on the photonic layer.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
98.
TUNNEL JUNCTION BASED RGB DIE WITH ISOLATED ACTIVE REGIONS
Provided is tunnel junction based RGB die with isolated active regions. The µLED array of one or more embodiments advantageously requires three plated metals and one common cathode per red-green-blue (RGB) pixel group. Additionally, the µLED array of one or more embodiments allows for better control of emission color than in known RGB technologies. A red pixel, a green pixel, and a blue pixel are grown sequentially on the same epitaxial wafer. Each pixel contains at least one active region and at least one tunnel junction. Each active region emits light of different wavelength than the other active region(s). The epitaxy includes at least one tunnel junction to avoid the need for contacts to etched p-GaN layers. The wafer is etched into multi-level mesas creating connected to multi-level plated metals. All of the junctions share a common cathode.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
Provided is a tunnel junction based RGB die and driving scheme. The µLED die of one or more embodiments advantageously requires three plated metals and one common cathode per red-green-blue (RGB) pixel group. Additionally, the µLED die of one or more embodiments allows for better control of emission color than in known RGB technologies. A red pixel, a green pixel, and a blue pixel are grown sequentially on the same epitaxial wafer. A driving scheme is provided that includes a single current source per RGB pixel. This is enabled by way of using PWM switches and a proper selection of the active region area per active region color.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
Provided is a visualization system including an LED comprised of a tunnel junction based RGB die with isolated active regions. The µLED die of one or more embodiments advantageously requires three plated metals and one common cathode per red-green-blue (RGB) pixel group. Additionally, the µLED die of one or more embodiments allows for better control of emission color than in known RGB technologies. A red pixel, a green pixel, and a blue pixel are grown sequentially on the same epitaxial wafer. Each pixel contains at least one active region and at least one tunnel junction. Each active region emits light of different wavelength than the other active region(s). The epitaxy includes at least one tunnel junction to avoid the need for contacts to etched p-GaN layers. The wafer is etched into multi-level mesas creating connected to multi-level plated metals. All of the junctions may share a common cathode.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
