Provided is a system for recovering argon during monocrystalline silicon production. The system comprises: an oxygen supply unit, a dust removal and oil removal filtration unit, a catalytic decarburization unit, a catalytic hydrogenation oxygen removal unit, and a rectification unit. A gas outlet of the dust removal and oil removal filtration unit and an oxygen outlet of the oxygen supply unit are each independently communicated with a gas inlet of the catalytic decarburization unit; a gas outlet of the catalytic decarburization unit is communicated with an inlet for a gas to be treated of the catalytic hydrogenation oxygen removal unit; an outlet of the gas to be treated of the catalytic hydrogenation oxygen removal unit is communicated with an inlet of the rectification unit; a waste argon discharge outlet of the rectification unit is communicated with the gas inlet of the catalytic decarburization unit. The system has a high argon recovery rate, and the purity of argon is high.
B01D 46/24 - Particle separators, e.g. dust precipitators, using rigid hollow filter bodies
B01D 46/62 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with multiple filtering elements, characterised by their mutual disposition connected in series
B01D 46/72 - Regeneration of the filtering material or filter elements inside the filter by acting counter-currently on the filtering surface, e.g. by flushing on the non-cake side of the filter with backwash arms, shoes or nozzles
B01D 46/71 - Regeneration of the filtering material or filter elements inside the filter by acting counter-currently on the filtering surface, e.g. by flushing on the non-cake side of the filter with pressurised gas, e.g. pulsed air
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
F23G 7/07 - Methods or apparatus, e.g. incinerators, specially adapted for combustion of specific waste or low grade fuels, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases in which combustion takes place in the presence of catalytic material
2.
CONNECTING ASSEMBLY, IMAGE COLLECTION APPARATUS AND HIGH-TEMPERATURE FURNACE
Provided in the embodiments of the present invention are a connecting assembly, an image collection apparatus and a high-temperature furnace. The connecting assembly is used for connecting an image collection module to a high-temperature furnace cover. The connecting assembly comprises a flange cylinder, wherein an accommodation cavity used for at least accommodating part of the image collection module is formed between a first end and a second end of the flange cylinder; one end of the flange cylinder is provided with a flange structure, which is configured to be connected to the high-temperature furnace cover; the first end and the second end are two ends opposite each other along the axis of the flange cylinder; a first cooling cavity is formed between an inner wall and an outer wall of the flange cylinder; and the first cooling cavity is configured to be filled with a cooling medium. The connecting assembly of the present invention can cool an image collection module in the accommodation cavity, thereby preventing the image collection module from failing and being damaged due to high temperature; thus, the normal operation of the image collection module can be ensured.
The present disclosure provides a method and a device for cutting a solar silicon wafer, and a storage medium, which relate to the technical field of crystalline silicon cutting and can solve a problem of high labor intensity of operators caused by repeated operation in solar silicon wafer cutting, improve production efficiency and reduce misoperation. A technical solution is specifically as follows: loading materials to be cut to a section cutter (101); adjusting a cutting wire mesh according to preset requirements, starting a cutting procedure when cutting conditions are met, and cutting the materials to be cut (102); generating prompt information for completed cutting after the cutting is completed (103); and unloading cut materials from the section cutter according to the prompt information for the completed cutting (104). The present disclosure is used for silicon wafer cutting.
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
B28D 7/04 - Accessories specially adapted for use with machines or devices of the other groups of this subclass for supporting or holding work
B28D 7/00 - Accessories specially adapted for use with machines or devices of the other groups of this subclass
4.
METHOD AND APPARATUS FOR ADJUSTING DIAMETER OF MONOCRYSTALLINE SILICON ROD, AND ELECTRONIC DEVICE AND STORAGE MEDIUM
A method and apparatus for adjusting the diameter of a monocrystalline silicon rod, and an electronic device and a storage medium. The method for adjusting the diameter of a monocrystalline silicon rod comprises: acquiring a measured diameter of a first monocrystalline silicon rod, the drawing of which has been completed, and on the basis of the measured diameter, calculating the actual diameter of the first monocrystalline silicon rod, wherein the measured diameter is measured by a polishing machine; and on the basis of the actual diameter and a preset target production diameter, adjusting a target calibration diameter, during equal-diameter calibration, of a second monocrystalline silicon rod to be drawn. Therefore, the accuracy of performing equal-diameter calibration on a second monocrystalline silicon rod on the basis of an adjusted target calibration diameter is higher, such that an error between the actual diameter of the second monocrystalline silicon rod and a target production diameter can be reduced. In addition, the accuracy of a measured diameter that is measured by using a polishing machine is higher, such that the accuracy of the actual diameter that is calculated on the basis of the measured diameter is higher, and thus the accuracy of the adjusted target calibration diameter is higher.
C30B 15/26 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using television detectorsStabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using photo or X-ray detectors
G01B 21/10 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring diameters
5.
MATERIAL CONTROL METHOD AND SYSTEM, AND STORAGE MEDIUM AND ELECTRONIC DEVICE
The present application relates to the field of silicon wafer production, and in particular to a material control method and system, and a storage medium and an electronic device, wherein the material control method is applied to a material control system. The method comprises: acquiring a raw material list by means of a manufacturing execution module, and sending the raw material list to a processing module; acquiring, by means of the processing module, a re-pulled material that is generated during a production process and a plurality of types of raw materials that are indicated by the raw material list, and processing the re-pulled material and the plurality of types of raw materials, so as to obtain a material to be used; collecting, by means of the manufacturing execution module, material information of the material to be used, and sending the material information to a material management module; conveying, by means of the material management module and according to the material information, the material to be used to a warehouse; sending a material calling request to a material barrel management module by means of the manufacturing execution module; and acquiring, by means of the material barrel management module and from the warehouse, a target material to be used that has a target weight, loading said target material into a material barrel, and conveying the material barrel to a feeding position corresponding to a target single crystal furnace, so as to add said target material that has the target weight into the target single crystal furnace.
G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
G06Q 10/08 - Logistics, e.g. warehousing, loading or distributionInventory or stock management
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
6.
CRYSTAL PULLING CONTROL METHOD AND DEVICE, SINGLE-CRYSTAL FURNACE AND COMPUTER STORAGE MEDIUM
A crystal pulling control method and device, a single-crystal furnace and a computer storage medium, which relate to the technical field of crystal pulling. A technical solution for determining a power reduction occasion of a heater according to an automatic molten material state is provided. The crystal pulling control method comprises: in response to a feeding completion signal, receiving solid-liquid parameters of a molten material image in a single-crystal furnace that is sent by an image collection and processing device; when the solid-liquid parameters meet power reduction conditions, controlling the heating power of a heater to reduce to a target power; and when the solid-liquid parameters meet a molten material full melting condition, adjusting a crystal pulling parameter of a crystal pulling apparatus to a target crystal pulling parameter.
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