Abstract

The present invention provides a high-crystallinity barium titanate film structure, a method of preparation and an application thereof, and relates to the field of materials and devices. The method includes the steps of depositing, on a substrate, a barium titanate layer with a (001) or (111) crystal orientation by atomic layer deposition in a high vacuum environment and at a low temperature of 450° C. or below, wherein a Ba/Ti ratio in the barium titanate layer is 0.9-1.5; and performing plasma annealing treatment on the barium titanate layer at a low temperature of 450° C. or below without breaking vacuum to form a high-crystallinity barium titanate layer having the (001) or (111) crystal orientation. The film structure may further comprise top and bottom electrodes formed above and below the barium titanate layer. The present invention solves the problem that an existing method for obtaining a crystalline BTO film is not applicable to back-end of line (BEOL) integration processes.

IPC Classes  ?

• C23C 16/56 - After-treatment
• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• H01G 7/06 - Capacitors in which the capacitance is varied by non-mechanical meansProcesses of their manufacture having a dielectric selected for the variation of its permitivity with applied voltage, i.e. ferroelectric capacitors
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A magnetic sensor includes a piezomagnetic component which includes a first piezomagnetic element and a second piezomagnetic element that are arranged opposite to each other, a magnetostrictive component which includes a first magnetostrictive element and a second magnetostrictive element arranged opposite to each other on the same side of the first piezomagnetic element and the second piezomagnetic element, respectively, and a piezoelectric component which includes a first piezoelectric element deposited underneath the first piezomagnetic element, a second piezoelectric element deposited underneath the second piezomagnetic element, a third piezoelectric element deposited underneath the first magnetostrictive element, and a fourth piezoelectric element deposited underneath the second magnetostrictive element. The first piezoelectric element and the second piezoelectric element are electrically connected to a power supply circuit, and produce first deformation, which is applied to the first piezomagnetic element and the second piezomagnetic element to produce an alternating magnetic field.

IPC Classes  ?

• G01R 33/02 - Measuring direction or magnitude of magnetic fields or magnetic flux
• H10N 35/85 - Magnetostrictive active materials
• H10N 35/00 - Magnetostrictive devices