A fuse wire including an electrically conductive core, a tin coating surrounding the electrically conductive core, and an enamel coating surrounding the tin coating. The enamel coating may be formed of one of polyesterimide, polyurethane, and polyester and may have a cut-through temperature in a range of 265 degrees Celsius to 350 degrees Celsius.
H01H 85/17 - Casings characterised by the casing material
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 3/30 - Insulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances plasticsInsulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances resinsInsulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances waxes
H01B 3/42 - Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances waxes polyesters, polyethers, polyacetal
H01H 85/06 - Fusible members characterised by the fusible material
2.
PRE-CHARGE SHORT CIRCUIT DETECTION FOR USE IN SOLID STATE PROTECTION SYSTEMS
Disclosed is an adaptive pre-charge control circuit, for use in a solid state disconnect and protection system, wherein the adaptive pre-charge control circuit includes a high-voltage switch coupled between a volotage source and a DC link capacitor wherein an electric load is powered by the voltage source. The control circuit may be operable to issue a pulse width modulated (PWM) signal to generate a current profile wherein every other pulse exceeds a predefined limit, monitor, during pre-charging, the current profile, and to determine an overcurrent fault exists in the case that two consecutive pulses exceed the predefined limit.
H02H 3/087 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess current for DC applications
G01R 31/52 - Testing for short-circuits, leakage current or ground faults
3.
ELECTRICALLY ISOLATED DISCRETE PACKAGE WITH HIGH PERFORMANCE CERAMIC SUBSTRATE
A substrate package arrangement may include a substrate that contains a ceramic body, a top metal layer, disposed on a top side of the ceramic body, and a bottom metal layer, disposed on a bottom side of the ceramic body, opposite the top surface. The substrate package arrangement may further include a lead structure, electrically connected to the top metal layer, and being electrically isolated from the bottom metal layer, wherein the substrate and lead structure are arranged in a discrete package, and wherein the ceramic body is formed of a high thermal conductivity material.
A connector for contacting a semiconductor chip. The connector may include a tab, where the tab includes an outer portion, having a planar shape, the outer portion having a lower surface, adapted to contact a surface of the semiconductor chip, and an upper surface that defines a main plane of the tab. The tab may also include a ring portion, the ring portion connected to the outer portion and extending proud of the main plane, wherein the ring portion defines an inner hole within the tab structure, the inner hole being adapted to expose a contact portion of the surface of the semiconductor chip, wherein the ring portion includes at least two slots. The connector may further include a clip, comprising a connection portion, the connection portion having an aperture that is adapted to couple around the ring portion.
A mechanically strong, robust, and flexibly designed fuse module is provided that can include (1) a fusible element surrounded by two housings and (2) mechanically reinforced terminals. In particular, the fusible element can be disposed between a first terminal and a second terminal, an inner housing can surround the fusible element, and an outer housing can be overmolded over the inner housing such that the first terminal and the second terminal can extend outside of both the inner housing and the outer housing. The first terminal can be mechanically reinforced by bending so as to fold around and onto the outer housing, and the second terminal can be double layered for mechanical reinforcement.
A method for forming a semiconductor package. The method may include performing a lead attachment operation, comprising attaching at least one lead directly to a substrate that is configured to support one or more semiconductor die, wherein the at least one lead is attached to the substrate in singulated fashion.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
A metal oxide varistor (MOV) device including a MOV chip, electrically conductive first and second electrodes disposed on opposite sides of the MOV chip, electrically conductive first and second leads connected to the first and second electrodes, respectively, and an arc mitigating, flame retarding coating covering the MOV chip, the first and second electrodes, and portions of the first and second leads, the arc mitigating, flame retarding coating comprising a silicone composition formed of a filler material suspended in a silicone resin, wherein the filler material includes one or more of melamine, guanidine, guanine, hydantoin, allantoin, urea, melamine-formaldehyde, melamine-cyanurate polymer, and boric acid.
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
Systems and methods for identifying a location of a thermal event detected by a temperature sensing tape are provided. In some embodiments, the temperature sensing tape can include a resistive ladder with parallel resistors between a plurality of temperature sensing elements to create voltage dividers, and unique analog output voltages can correspond to different ones of the plurality of temperature sensing elements being activated. In some embodiments, pulses injected into and reflected by the temperature sensing tape can be used detect a distance to a location where a triggering event is detected.
A resistance stable polymer positive temperature coefficient (PPTC) material is provided that can include a polymer matrix, a plurality of filler components disposed in the polymer matrix, and a plurality of carbon black particles bonded around each of the plurality of filler components to increase dispersion of the plurality of carbon black particles in the polymer matrix, thereby increasing a conductive volume of the polymer matrix and reducing a resistance variance in the polymer matrix.
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
12.
PPTC MATERIAL WITH ONE-STEP HOT APPLICATION PROCESS
A method for preparing a preparing a polymeric positive temperature coefficient (PPTC) compound and conformally applying such compound to a substrate in accordance with an embodiment of the present disclosure may include preparing and mixing raw materials to form a PPTC mixture, processing the PPTC mixture through polymer compounding equipment, wherein the PPTC mixture is heated and is extruded as a PPTC compound, performing a beaming process on the polymer compound to establish crosslinking between polymer chains in the PPTC compound, and applying the PPTC compound to a substrate using a hot application process wherein the PPTC compound is heated and is conformally applied to a surface of the substrate.
C08J 3/28 - Treatment by wave energy or particle radiation
B29C 65/00 - Joining of preformed partsApparatus therefor
B29C 65/02 - Joining of preformed partsApparatus therefor by heating, with or without pressure
B29L 31/34 - Electrical apparatus, e.g. sparking plugs or parts thereof
C08J 3/20 - Compounding polymers with additives, e.g. colouring
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
13.
RESISTANCE STABLE POLYMER POSITIVE TEMPERATURE COEFFICIENT (PPTC) MATERIAL
A resistance stable polymer positive temperature coefficient (PPTC) material is provided that can include a polymer matrix, a plurality of filler components disposed in the polymer matrix, and a plurality of carbon black particles bonded around each of the plurality of filler components to increase dispersion of the plurality of carbon black particles in the polymer matrix, thereby increasing a conductive volume of the polymer matrix and reducing a resistance variance in the polymer matrix.
A method may include providing a semiconductor substrate, comprising a first layer of a first thickness dopant, a first dopant polarity, and a first dopant concentration; and a second layer having a second thickness greater than the first thickness, a second polarity, and second dopant concentration, wherein the second layer defines a second dopant concentration, greater than the first dopant concentration. The method may further include forming a separation diffusion region having a dopant of the second dopant polarity around a periphery of the first layer, where the separation diffusion region extends from a first surface to a separation depth, greater than the first thickness of the first layer. The method may also include performing a thinning of the semiconductor substrate by removing a portion of the second layer from the second surface, wherein after the thinning, the second layer comprises a third thickness, less than the first thickness.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
A fuse holder includes a movable tab, a base, and a cover. A stud is affixed to the movable tab and secures a terminal of a bolt-down fuse. A second stud is affixed to the base and secures a second terminal of the bolt-down fuse. The base has a channel into which the movable tab is slidably inserted. The cover connects to the base and is located over the stud and the second stud.
H01H 85/20 - Bases for supporting the fuseSeparate parts thereof
H01H 85/22 - Intermediate or auxiliary parts for carrying, holding, or retaining fuse, co-operating with base or fixed holder, and removable therefrom for renewing the fuse
A pressure contact assembly includes a power substrate, a chip, and a lead. The power substrate has a surface connected to a ceramic tile and a cavity. The chip is soldered to the surface. The lead is to be inserted into the cavity and has a top portion to connect to an external device and a bottom portion to fit into the cavity.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
17.
VARISTOR INCLUDING REFLOWABLE THERMAL PROTECTION DEVICE ON VARISTOR SURFACE
A circuit protection device may include a varistor body including a first side, wherein a thermal electrode is disposed along the first side, and wherein a first lead is electrically connected to the thermal electrode and a second lead is electrically connected to a second side. The circuit protection device may further include a reflowable circuit protection device atop the thermal electrode, and a third lead connected to the reflowable circuit protection device, wherein an end of the third lead is a spring connected to the thermal electrode by a conductive element.
A circuit protection device may include a current sensor and a pyrotechnic fuse connected to the current sensor, wherein the pyrotechnic fuse includes a housing and a busbar extending through the housing, and wherein the busbar is positioned between a first chamber and a second chamber. The circuit protection device may further include a piston within the first chamber, wherein the piston is operable to receive a force from a squib, and wherein in response to a signal from the current sensor, the force from the squib causes the piston to create an opening in the busbar.
H01H 85/02 - Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive Details
H01H 39/00 - Switching devices actuated by an explosion produced within the device and initiated by an electric current
An apparatus and an associated method for a reverse-conducting insulated gate bipolar transistors and associated structures. The apparatus includes a substrate disposed between a frontside and a backside, a diode pilot region disposed in the substrate, an insulated gate bipolar transistor (IGBT) region disposed in the substrate, and a diode region with a barrier layer disposed adjacent to each of and between the diode pilot region and the IGBT region. The barrier layer is configured to prevent flow of electrons at a first predetermined current and allow flow of electrons at a second predetermined current.
H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
The disclosure is directed to protection devices including a positive temperature coefficient (PTC) element having a first main side opposite a second main side, and a thermal device coupled to the PTC element by a conductive material. The thermal device may include a main body, a first heating element coupled to a first side of the main body, and a second heating element coupled to a second side of the main body, wherein the first heating element is directly coupled to the second main side of the PTC element.
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
H01C 7/18 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
H05B 3/12 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
H05B 3/20 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
A fuse including a tubular fuse body, a fusible element extending through the fuse body, a first endcap disposed on a first longitudinal end of the fuse body in electrical communication with the fusible element, the first endcap having a first indentation defining a first indented surface extending into the fuse body, and a second endcap disposed on a second longitudinal end of the fuse body in electrical communication with the fusible element, the second endcap having a second indentation defining a second indented surface extending into the fuse body.
09 - Scientific and electric apparatus and instruments
Goods & Services
(1) Electrical devices in the nature of a multi-functional protection relay device with neutral ground resistor, ground check and ground fault monitoring
A molded filler pad for encapsulating a fuse element can include one or more collection channels and one or more molded walls. The collection channels can guide conductive particulates from the fuse element along interior walls of a fuse body housing the fuse element to control any venting of the conductive particulates. The molded walls can press against the interior walls of the fuse body to control where the conductive particulars redeposit and prevent the same from redepositing in a connected path. The collection channels and the molded walls can be molded into a single device for filling the fuse body and be formed from a material that can remain undamaged and physically intact even when exposed to pressure and heat from an electrical arc of the fuse device that is produced as the fuse element opens to interrupt a circuit.
A system and associated method for direct liquid cooling of semiconductor devices. The system includes at least one semiconductor device is positioned on a die substrate and at least one cold plate disposed within the die substrate and containing a cooling liquid. The cold plate is positioned proximate to the semiconductor device and configured to at least partially dissipate heat using the cooling liquid from the semiconductor device during operation of the semiconductor device.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
A system and associated method for direct liquid cooling of semiconductor devices. The system includes at least one semiconductor device is positioned on a die substrate and at least one cold plate disposed within the die substrate and containing a cooling liquid. The cold plate is positioned proximate to the semiconductor device and configured to at least partially dissipate heat using the cooling liquid from the semiconductor device during operation of the semiconductor device.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
27.
THREE-DIMENSIONAL ELECTRODES FOR REFLOWABLE PTC DEVICE
A three-dimensional electrode for a reflowable PTC device is provided. The three-dimensional electrode can include a planar portion for connecting with a PTC material on a top surface thereof or a bottom surface thereof, at least one expander portion electrically and physically connected with and perpendicular with the planar portion, and one or more terminals electrically and physically connected with the at least one expander portion, wherein the at least one expander portion can vertically or horizontally offset the one or more terminals from the planar portion.
H01C 1/14 - Terminals or tapping points specially adapted for resistorsArrangements of terminals or tapping points on resistors
H01C 1/034 - HousingEnclosingEmbeddingFilling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
H01C 1/144 - Terminals or tapping points specially adapted for resistorsArrangements of terminals or tapping points on resistors the terminals or tapping points being welded or soldered
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
H01C 7/18 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
H01H 9/00 - Details of switching devices, not covered by groups
H01H 71/00 - Details of the protective switches or relays covered by groups
H01H 85/00 - Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
H02B 1/24 - Circuit arrangements for boards or switchyards
29.
SHOWER NOZZLE CONFIGURATION FOR SEMICONDUCTOR WAFER DICING SAW SYSTEM
A semiconductor dicing saw system including a semiconductor dicing saw having a cutting blade, a chuck table located below the semiconductor dicing saw for supporting a semiconductor substrate to be cut by the semiconductor dicing saw, and a shower head located adjacent the semiconductor dicing saw, the shower head including a first nozzle positioned and oriented to direct a first stream of fluid at the cutting blade, and a second nozzle positioned and oriented to direct a second stream of fluid at a juncture of the cutting blade and a semiconductor substrate being cut by the cutting blade.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A circuit protection apparatus. The apparatus includes a solid-state disconnect electronic component, and a sensor coupled to the solid-state disconnect electronic component. The solid-state disconnect electronic component is configured to disconnect an operational electronic component and a power source upon the sensor detecting a fault condition.
H02H 3/00 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection
31.
ISOLATION DEVICE HAVING INDUCTIVE AND CAPACITIVE ISOLATION CIRCUIT
An isolation circuit arrangement may include an isolation barrier and may be configured to receive one or more input signals on a low voltage side and deliver one or more output signals on a high voltage side. The isolation barrier may include a first capacitor, arranged along a first input line, a second capacitor arranged along a second input line, electrically parallel to the first capacitor, and a first inductor having a first end that is coupled to a first electrode of the first capacitor and having a second end that is coupled to a first electrode of the second capacitor. The isolation barrier may further include a center tap, connected to the first inductor, and a second inductor that is inductively coupled to the first inductor and is arranged with a first output end and a second output end on a high voltage side of the isolation circuit arrangement.
H03K 17/691 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
H03K 17/567 - Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
A connector for a semiconductor device package. The connector may include a middle portion, having a curved concave shape in a front view, with respect to a given surface. The connector may include a first contacting portion, integrally connected to the middle portion on a first side, as wells as a second contacting portion, integrally connected to the middle portion on a second side, wherein the first contacting portion and the second contacting portion define a curved convex surface in the front view. with respect to the given surface. In some implementations, the connector may include a slot assembly as well as one or more indents that define a meander path, which structure imparts a greater elastic flexibility, such as under mechanical load.
Disclosed are dies carriers for receiving a plurality of circuit protection devices. In some embodiments, a die carrier may include a die body, and a recess in the die body, wherein the recess is operable to receive a die for a circuit protection device. The recess may include a central area defined by a set of sidewalls, and a plurality of corner areas extending from the central area, each of the corner areas defined by a first curved wall, a second curved wall connected to the first curved wall, and a third curved wall connected with the second curved wall, wherein a first center of curvature of the first curved wall is in a different location than a second center of curvature of the second curved wall.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
34.
MULTI-CHANNEL TRIGGER SENSOR FOR PYROTECHNIC FUSES
Disclosed are multi-channel input trigger sensors for pyrotechnic fuses. In some embodiments, the current sensor may include a multi-channel-input triggering pyrotechnic fuse for electric vehicle (EV) applications, which is fast, reliable, and operates with different trigger sources and with different vehicle modes.
H02H 3/08 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess current
G07C 5/08 - Registering or indicating performance data other than driving, working, idle, or waiting time, with or without registering driving, working, idle, or waiting time
H02H 1/00 - Details of emergency protective circuit arrangements
A fused disconnect switch may include a fuse carrier to house a fuse, an actuator configured to reversibly engage and disengage with the fuse carrier; a common trip link, mechanically coupled to move in concert with the actuator, and a contact arm, indirectly mechanically coupled to the common trip link. As such, when the fuse carrier is disposed in an engaged position, the contact arm is free to move into a closed position to make electrical contact with a fixed contact, and when the fuse carrier is in a disengage position, the contact arm is prevented from moving into the closed position.
H01H 85/25 - Safety arrangements preventing or inhibiting contact with live parts, including operation of isolation on removal of cover
H01H 85/02 - Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive Details
H01H 85/32 - Indicating lamp structurally associated with the protective device
09 - Scientific and electric apparatus and instruments
Goods & Services
Downloadable software application for configuring electronic devices; downloadable software application for configuring electronic devices which communicate on a Controller Area Network (CAN) protocol.
09 - Scientific and electric apparatus and instruments
Goods & Services
Downloadable software application for configuring electronic devices; downloadable software application for configuring electronic devices which communicate on a Controller Area Network (CAN) protocol.
A press pack power semiconductor device can include a housing, a semiconductor, and a locator strip deformed into a ring-like shape to concentrically fit within the housing and concentrically locate at least part of the semiconductor therein. The locator strip can include a first plurality of regions regularly interspersed with a second plurality of regions along a length of the locator strip, and each of the first plurality of regions can have a first cross-sectional area that can be smaller than a second cross-sectional area of each of the second plurality of regions.
A semiconductor device package. The semiconductor device package may include a baseplate, the baseplate comprising at least one through hole, and a substrate assembly, comprising a plurality of ceramic plates that are affixed to the base plate, wherein at least one ceramic plate of the plurality of ceramic plates comprises a trapezoidal shape. As such, at least one ceramic plate of the plurality of ceramic plates has a trapezoidal shape as defined within a main plane of base plate.
A press pack power semiconductor device can include a housing, a semiconductor, and a locator strip deformed into a ring-like shape to concentrically fit within the housing and concentrically locate at least part of the semiconductor therein. The locator strip can include a first plurality of regions regularly interspersed with a second plurality of regions along a length of the locator strip, and each of the first plurality of regions can have a first cross-sectional area that can be smaller than a second cross-sectional area of each of the second plurality of regions.
H01L 23/051 - ContainersSeals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
H01L 23/16 - Fillings or auxiliary members in containers, e.g. centering rings
45.
PACKAGE DEVICE BASEPLATE INCLUDING PLATFORM SECTION
Disclosed are approaches for reducing curvature and stress of baseplate of a package device. In some embodiments, a device may include a substrate including a base section connected with a platform section, wherein the platform section extends from a first main side of the base section. The device may further include a direct-copper-bonded (DCB) substrate coupled to the substrate, wherein the DCB substrate comprises a first conductive layer coupled to an insulative substrate layer, and wherein the first conductive layer is coupled to the platform section of the substrate.
A jump stud assembly including a housing, electrically conductive first and second studs extending through a floor of the housing into a compartment defined by the housing, and a fuse module including a mounting block having a through-hole extending therethrough, a fuse plate having an upper portion on a top of the mounting block and having a through-hole aligned with the through-hole of the mounting block, a lower portion on a bottom of the mounting block and having a through-hole aligned with the through-hole of the mounting block, and a fusible element adjacent a sidewall of the mounting block connecting the upper portion of the fuse plate to the lower portion of the fuse plate, wherein the fuse module is mounted on a portion of the first stud outside the compartment with the upper portion of the fuse plate in electrical communication with the first stud.
A fuse including a fuse body, a fusible element disposed within the fuse body, first and second terminals extending from opposite ends of the fusible element and out of the fuse body, and a quantity of arc suppressing material formed on the fusible element, wherein the arc suppressing material is formed of a mixture of sand, an arc suppressant, and a flame retarding binder.
A positive temperature coefficient (PTC) circuit protection device including a dielectric substrate layer, first and second high resistance layers disposed on a top surface of the substrate layer in a spaced apart relationship to define a gap therebetween, a PTC layer disposed on the top surface of the substrate layer in the gap and in contact with the first and second high resistance layers, a mask layer covering a top surface of the PTC layer and portions of top surfaces of the first and second high resistance layers, an electrically conductive first terminal covering a first longitudinal end of the substrate layer and an outermost end of the first high resistance layer distal from the PTC layer, and an electrically conductive second terminal covering a second longitudinal end of the substrate layer and an outermost end of the second high resistance layer distal from the PTC layer.
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
H01C 1/14 - Terminals or tapping points specially adapted for resistorsArrangements of terminals or tapping points on resistors
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
Approaches provided herein include a protection device assembly including multilayer electrodes. In some embodiments, a protection device assembly may include a protection component, a first electrode layer extending along a first main side of the protection component, and a second electrode layer extending along a second main side of the protection component. The protection device assembly may further include a first substrate layer disposed over at least one of: the first electrode layer, and the second electrode layer, a foil layer disposed over the first substrate layer, wherein the foil layer is partially separated from the first electrode layer by the first substrate layer, and a solder pad extending around an end of the protection component and the first substrate layer, wherein the solder pad is in contact with the foil layer.
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
H01C 1/14 - Terminals or tapping points specially adapted for resistorsArrangements of terminals or tapping points on resistors
A chip fuse including a fuse body with an electrically insulating floating lead support layer, a metallic first floating lead and a metallic second floating lead disposed on the floating lead support layer and spaced apart to define a gap therebetween, an electrically insulating fuse support layer disposed adjacent, and parallel to, the floating lead support layer, and an electrically conductive fuse layer disposed on the fuse support layer, the fuse layer including a first terminal portion and a second terminal portion connected by a fusible portion. The chip fuse further includes an electrically conductive first end termination and an electrically conductive second end termination disposed on opposing ends of the fuse body, wherein the first end termination is electrically connected to the first terminal portion and the first floating lead and wherein the second end termination is electrically connected to the second terminal portion and the second floating lead.
H01H 85/02 - Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive Details
H01H 85/143 - Electrical contactsFastening fusible members to such contacts
51.
Methods of preparing metal sheets for a DCB / DAB substrate bonding process
Novel methods of preparing a metal bonded substrate. A method may include providing a ceramic substrate, the ceramic substrate comprising a ceramic body. The method may include bonding a thick metal sheet to the ceramic substrate, wherein the bonding comprises forming a metal oxide layer by powder deposition on a metal surface, and bringing the ceramic substrate and thick metal sheet together, wherein the metal oxide layer and the thick metal sheet interact to form an interface layer between the thick metal sheet and the ceramic substrate, after the bonding.
A fuse holder can include a first holding part and a second holding part. The first holding part can include a first mounting apparatus, a first joint interface, and a first conductive terminal therebetween, and the second holding part can include a second mounting apparatus, a second joint interface, and a second conductive terminal therebetween. The first joint interface can lock with the second joint interface in a primary latching position or a secondary latching position. When the first joint interface locks with the second joint interface in the primary latching position, the first conductive terminal can be a first distance from the second conductive terminal, but when the first joint interface locks with the second joint interface in the secondary latching position, the first conductive terminal can be a second distance from the second conductive terminal that is greater than the first distance.
Novel methods of preparing a metal bonded substrate. A method may include providing a ceramic substrate, the ceramic substrate comprising a ceramic body. The method may include bonding a thick metal sheet to the ceramic substrate, wherein the bonding comprises forming a metal oxide layer by powder deposition on a metal surface, and bringing the ceramic substrate and thick metal sheet together, wherein the metal oxide layer and the thick metal sheet interact to form an interface layer between the thick metal sheet and the ceramic substrate, after the bonding.
A dike as an epoxy squeeze out barrier in a fuse device is provided. The fuse device can include first and second layers of laminate material, a cavity formed by central openings of the first and second layers of the laminate material, a fuse element that is supported by at least one of the first and second layers of the laminate material and traverses the cavity, an adhesive located on at least one of the first and second layers of the laminate material for bonding thereof, and a dike located on at least one of the first and second layers of the laminate material and surrounding a circumference of the cavity. When the first and second layers of the laminate material, the fuse element, the adhesive, and the dike are pressed together during manufacture, the dike can prevent the adhesive from flowing into the cavity.
H01H 85/00 - Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
A fuse device is provided that can include a rectangular fuse and a round fuse socket cap that can include a rectangular receptacle for receiving the fuse. The fuse socket cap and the fuse can be free of red phosphorous, and the rectangular receptacle can consume a percentage of a surface area or a volume of the fuse socket cap below a predetermined threshold that prevents reduction of a breaking capacity of the round fuse socket cap.
A terminal assembly, arranged for an automobile harness, comprising: a substrate; a modified terminal, arranged as a plate structure that is arranged on the substrate and extends perpendicularly with respect to a plane of the substrate; and a resettable fuse component, the resettable fuse component comprising a polymer positive temperature coefficient (PPTC) material, and coupled in series with the modified terminal.
H02H 5/04 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
B60R 16/02 - Electric or fluid circuits specially adapted for vehicles and not otherwise provided forArrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric
A connector for contacting a semiconductor chip. The connector may include a tab, where the tab includes an outer portion, having a planar shape, the outer portion having a lower surface, adapted to contact a surface of the semiconductor chip, and an upper surface that defines a main plane of the tab. The tab may also include a ring potion, the ring portion connected to the outer portion and extending proud of the main plane, wherein the ring portion defines an inner hole within the tab structure, the inner hole being adapted to expose a contact portion of the surface of the semiconductor chip, wherein the ring portion includes at least two slots. The connector may further include a clip, comprising a connection portion, the connection portion having an aperture that is adapted to couple around the ring portion.
A method of manufacturing a metal oxide varistor (MOV), the method including placing a quantity of a MOV composition in a pressing die, the MOV composition including metal oxide granules mixed with a polyaniline-polymer, performing a pressing operation including operating the pressing die to compress the MOV composition into a solid MOV chip, and applying first and second electrodes to opposing first and second sides of the MOV chip, wherein the pressing operation is performed at a temperature in a range of 15 degrees Celsius to 200 degrees Celsius.
H01C 1/034 - HousingEnclosingEmbeddingFilling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
H01C 1/142 - Terminals or tapping points specially adapted for resistorsArrangements of terminals or tapping points on resistors the terminals or tapping points being coated on the resistive element
H01C 7/10 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
H01C 17/00 - Apparatus or processes specially adapted for manufacturing resistors
H01C 17/065 - Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick-film techniques, e.g. serigraphy
H01C 17/28 - Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
Approaches disclosed herein are related to vertically oriented fusible devices and vertically oriented fuse blocks. In one approach, a vertical fuse assembly may include a body comprising an upper section and a lower section, and a fuse extending between an upper terminal and a lower terminal, wherein the upper terminal is positioned within the upper section, wherein the lower terminal is positioned within the lower section, and wherein the lower terminal extends through the lower section. The vertical fuse assembly may further include a side terminal adjacent the fuse body, wherein the side terminal extends through the lower section.
H01H 85/02 - Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive Details
H01H 85/20 - Bases for supporting the fuseSeparate parts thereof
H01H 85/38 - Means for extinguishing or suppressing arc
A semiconductor device protection arrangement. The semiconductor device protection arrangement may include a semiconductor chip; a controller, coupled to the power semiconductor chip; and a temperature sensor, disposed in thermal contact with the semiconductor chip, where the temperature sensor includes a positive temperature indicator (PTI) component.
H02H 5/04 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
A self-limiting heater and method for building the self-limiting heater are disclosed. The self-limiting heater consists of a resistor and a PTC resistor coupled together in series with a power supply. Both resistive devices have good thermal coupling. The resistor has a low temperature coefficient while the resistance of the PTC resistor increases with an increase in temperature. The ohmic resistance ratio between the resistor and the PTC may be used to adjust the heater characteristics and limit the characteristic sharpness.
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
Disclosed are various protection devices and associated methods. In some embodiments, a protection device may include a substrate, and a fusible element extending between a first terminal and a second terminal, wherein the fusible element, the first terminal, and the second terminal are coupled to the substrate. The protection device may further include a cover formed over the fusible element, wherein the fusible element is positioned between the cover and the substrate.
A device assembly for surface mount devices includes a matrix of SMD skeletons and a polymeric positive temperature coefficient (PPTC) material disposed over the matrix. The matrix consists of multiple rows, with each SMD skeleton having a pair of terminals and multiple whiskers perpendicular to and between the terminals. The PPTC material connects the terminals to the whiskers.
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
G01K 7/22 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being a non-linear resistance, e.g. thermistor
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 3/40 - Forming printed elements for providing electric connections to or between printed circuits
69.
Leadframeless electrically isolated power semiconductor package
A lead-free power semiconductor package (PSP) includes a substrate, multiple copper leads, a die, and an encapsulant. The substrate has alternating layers of copper and silicon nitride. The copper leads, which are not part of a leadframe, are connected to the substrate using active metal brazing. The die, which contains circuitry to allow the PSP to operate, is connected to the substrate using silver sintered paste. The encapsulant encases the substrate and the die with a portion of the multiple leads being outside the encapsulant.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/433 - Auxiliary members characterised by their shape, e.g. pistons
A positive temperature coefficient (PTC) heater including a PTC layer formed of a material exhibiting a non-linear change in resistance in response to changes in temperature, an electrode layer including first and second electrodes disposed atop the PTC layer, each of the first and second electrodes including a spine and a plurality of tines extending inwardly therefrom, with the spine of the first electrode oriented parallel to the spine of the second electrode and with the tines of the first electrode disposed in an interdigitated relationship with the tines of the second electrode, an adhesive layer including first and second adhesive strips disposed atop the spines of the first and second electrodes, respectively, and a busbar layer including first and second busbars disposed atop the first and second adhesive strips, respectively, and adhered to the spines of the first and second electrodes by the first and second adhesive strips, respectively.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
A pre-charge circuit. The precharge circuit may include a switching device for controlling a voltage to be supplied to a battery; and a heterogeneous thermistor circuit, coupled to the switching device. The heterogeneous thermistor circuit may include a negative temperature coefficient (NTC) component; and a polymer positive temperature coefficient (PPTC) component, arranged in electrical series with the NTC component and the switching device.
H01C 7/02 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
H01C 7/04 - Non-adjustable resistors formed as one or more layers or coatingsNon-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
H01M 10/42 - Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
Disclosed is a control circuit, for use in a solid state battery disconnect and protection system, wherein control circuit includes a high-voltage switch coupled between an electric battery and a DC link capacitor of an electric vehicle, wherein the electric vehicle is powered by the electric battery, and a control block. The control block may by operable to monitor a rate of change and a value of a current on a connection to the high-voltage switch, determine whether the rate of change of the current exceeds a first predetermined threshold and determine whether the value of the current exceeds a second predetermined threshold, and determine an overcurrent fault exists in the case that the first or second predetermined threshold is exceeded.
H02H 7/18 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteriesEmergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for accumulators
H02H 1/00 - Details of emergency protective circuit arrangements
Disclosed is an adaptive pre-charge control circuit, for use in a solid state battery disconnect and protection system, wherein the adaptive pre-charge control circuit includes a high-voltage switch coupled between an electric battery and a DC link capacitor of an electric vehicle, and wherein the electric vehicle is powered by the electric battery. The control circuit may be operable to issue a pulse width modulated (PWM) signal to generate a current profile wherein every other pulse exceeds a predefined limit, monitor, during pre-charging, the current profile, and to determine an overcurrent fault exists in the case that two consecutive pulses exceed the predefined limit.
H02H 7/18 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteriesEmergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for accumulators
H02H 1/00 - Details of emergency protective circuit arrangements
74.
Electrically isolated discrete package with high performance ceramic substrate
A substrate package arrangement may include a substrate that contains a ceramic body, a top metal layer, disposed on a top side of the ceramic body, and a bottom metal layer, disposed on a bottom side of the ceramic body, opposite the top surface. The substrate package arrangement may further include a lead structure, electrically connected to the top metal layer, and being electrically isolated from the bottom metal layer, wherein the substrate and lead structure are arranged in a discrete package, and wherein the ceramic body is formed of a high thermal conductivity material.
A method of manufacturing a power semiconductor device in accordance with an embodiment of the present disclosure may include providing a substrate disposed atop a heatsink, electrically connecting a semiconductor die to a top surface of the substrate, disposing a thin metallic layer atop the substrate, disposing a terminal atop the thin metallic layer, and performing a welding operation wherein a laser beam is directed at a top surface of the terminal to produce a plurality of weld connections connecting the terminal to the substrate, wherein the weld connections are separated by gaps, and wherein heat generated during the welding operation melts the thin metallic layer and molten material of the thin metallic flows into the gaps.
Methods for making reverse-blocking insulated gate bipolar transistors and associated structures. A first and a second silicon wafer substrates are provided and bonded. One or more separation diffusion regions are formed in the first silicon wafer substrate. One or more front side metal-oxide semiconductor (MOS) structures are formed on a top surface of the first silicon wafer substrate. The second silicon wafer substrate layer is removed. A contact diffusion layer is formed on a bottom surface of the first silicon wafer substrate. A backside metallization layer is formed on a bottom surface of the contact diffusion layer.
H10D 84/03 - Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
77.
HYBRID CONDUCTIVE PASTE FOR FAST-OPENING, LOW-RATING FUSES
Provided herein a circuit protection devices including a fusible element attached to a ceramic substrate, the fusible element comprising a paste including a plurality of nickel particles.
H01H 85/0445 - General constructions or structure of low voltage fuses, i.e. below 1,000 V, or of fuses where the applicable voltage is not specified fast or slow type
A fuse holder includes a housing and a knob. The housing has a telescoping chamber designed to receive a knob terminal, where the knob terminal is adapted to receive a fuse. The knob has a neck which is inserted into the telescoping chamber to enclose the cylindrical fuse. The housing and neck are made of a polymer having a thermal conductivity in a range of 4.0 to 10 W/mK.
A fuse element includes a bridge assembly located adjacent one side of a center portion. The bridge assembly includes multiple bridges connected to a fuse terminal. Each bridge has a cross-sectional area different from each other bridge. A first bridge is adjacent the center portion and has a first cross-sectional area. A last bridge is adjacent the fuse terminal and has a second cross-sectional area greater than the first cross-sectional area.
Provided herein are approaches for improving performance of current sensors. In some embodiments, an apparatus may include a current sensor coupled to a busbar, the current sensor comprising a coil, wherein a current flowing through the busbar generates a first magnetic field detectable by the current sensor, wherein the coil is operable to generate a second magnetic field, and wherein by orienting the coil, the current sensor will receive part of the second magnetic field, superposed to the first magnetic field.
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
83.
Adaptive pre-charge control for electric vehicle DC link capacitor
An adaptive pre-charge control circuit includes include a high-voltage switch and a control circuit. The high-voltage switch controls the flow of current between an electric battery and a DC link capacitor, the electric battery to supply power to an electric vehicle. The DC link capacitor is made up of a sum of individual input capacitors of multiple subunits within an electric vehicle. The control circuit sends a PWM signal to the high-voltage switch based on a difference between an electric battery voltage and a DC link capacitor voltage.
A fuse includes a fuse body, two terminals, and a termination reinforcement. The fuse body surrounds a fusible element. The first terminal is located at one end of the fuse body and the second terminal is located at the other end of the fuse body. The fusible element is mechanically connected to the first and second terminals. The termination reinforcement is located at one end of the fuse body.
H01H 85/041 - Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
H01H 85/00 - Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
H01H 85/06 - Fusible members characterised by the fusible material
H01H 85/08 - Fusible members characterised by the shape or form of the fusible member
H01H 85/17 - Casings characterised by the casing material
H01H 85/175 - Casings characterised by the casing shape or form
A fuse comprising including a housing, a fusible element disposed within the housing, first and second terminals extending from opposite ends of the fusible element and out of the housing, and a quantity of arc suppressing material disposed on the fusible element, wherein the arc suppressing material is formed of a polyamide hotmelt adhesive mixed with a flame retardant.
A battery protection device includes a Charge/Discharge Over Temperature (CDOT) device and a wireless charging coil. The CDOT device consists of a first electrode, a second electrode, and a variable resistance material. The first electrode is located on a substrate and has a first collection of fingers. The second electrode is located on the substrate and has a second collection of fingers. The first fingers and the second fingers are disposed in an interdigitated, spaced-apart relationship with one another, resulting in a gap between them that is serpentine and tortuous. The variable resistance material changes its resistance in response to a change in temperature.
A temperature sensing tape is provided and can include an insulating support structure and at least one temperature sensing element disposed on the insulating support structure wherein the at least one temperature sensing element can be formed from a single polymer mixture that includes two or more polymers, and wherein each of the two or more polymers can have a respective, different crystallinity point.
A temperature sensing tape is provided and can include an insulating support structure and at least one temperature sensing element disposed on the insulating support structure wherein the at least one temperature sensing element can be formed from a single polymer mixture that includes two or more polymers, and wherein each of the two or more polymers can have a respective, different crystallinity point.
H02H 1/00 - Details of emergency protective circuit arrangements
G01K 1/024 - Means for indicating or recording specially adapted for thermometers for remote indication
G01K 3/00 - Thermometers giving results other than momentary value of temperature
G01K 7/16 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements
H02H 6/00 - Emergency protective circuit arrangements responsive to undesired changes from normal non-electric working conditions using simulators of the apparatus being protected, e.g. using thermal images
89.
ISOLATED POWER PACKAGING WITH FLEXIBLE CONNECTIVITY
An isolated packaging structure and methods thereof. The structure includes a housing having a top side and a bottom side. The housing encapsulates one or more electronic components. The structure also include one or more openings disposed in the bottom side of the housing. One or more openings are configured for exposing one or more metallized surfaces of one or more electronic components. One or more metallized surfaces are configured for coupling to one or more lead terminals.
A Power Distribution Unit (PDU) includes a cover and a base. The cover has multiple fastener receptacles and a pair of indentations located along its outer edge. The base has an opening on a short side of the PDU for receiving a cable connector and a window on a long side of the PDU, the window being secured to a second cover. The long side is perpendicular to the short side.
A fuse shield features a cylindrical body, a first cap cover, a second cap cover, and a stop region. The cylindrical body is adapted to be placed over and partially surround a cylindrical fuse. The cylindrical body is sandwiched between the first and second cap covers. The stop region is located on an edge of the first cap cover to limit rotation of the cylindrical fuse to a first degree in one direction on a flat surface.
An electrical contactor including a contactor assembly including a housing, an electromagnet coil and an electrically conductive core disposed within the housing, the core being movable relative to the coil under influence of an electromagnetic force produced by the coil, and an electrically conductive bridge connected to a lower end of the core and movable with the core, an interrupter assembly including a base located below the bridge and having a trench formed in a top surface thereof, an input bus bar and an output bus bar disposed on the base on opposing sides of the trench, and a pyrotechnic interrupter disposed within the trench. The pyrotechnic interrupter may include a plunger and pyrotechnic ignitor disposed below the plunger, wherein, when the pyrotechnic ignitor is actuated, the plunger forcibly drives the bridge away from the input bus bar and an output bus bar to break an electrical connection therebetween.
A method for producing an arc quenching fuse filler including providing a conventional fuse filler material, mixing a binder agent with the conventional fuse filler material, mixing an arc quenching promotor with the conventional fuse filler material and binder agent, and curing the binder agent, whereby granules of the arc quenching promotor are bound to granules of the conventional fuse filler material.
Provided are circuit protection devices. In some embodiments, a protection device may include a set of leads extending though a socket body, wherein the socket body includes a first side opposite a second side, and a third side opposite a fourth side, wherein the third and fourth sides extend between the first and second sides, and wherein the third side includes a thermal vent. The protection device may further include a fusible element surrounding a central shaft, wherein the fusible element is connected with the set of leads.
A fuse holder includes a movable tab, a base, and a cover. A stud is affixed to the movable tab and secures a terminal of a bolt-down fuse. A second stud is affixed to the base and secures a second terminal of the bolt-down fuse. The base has a channel into which the movable tab is slidably inserted. The cover connects to the base and is located over the stud and the second stud.
H01H 85/20 - Bases for supporting the fuseSeparate parts thereof
H01H 85/22 - Intermediate or auxiliary parts for carrying, holding, or retaining fuse, co-operating with base or fixed holder, and removable therefrom for renewing the fuse
96.
Inner chambers with blast attenuation geometry on fuses
A fuse includes multiple stacked layers, a first terminal, and a second terminal. The first terminal is connected to one end of a fusible element and the second terminal is connected to the other end. The stacked layers include first and second intermediate layers and a special layer. The first intermediate layer, which has a centrally disposed opening, is stacked on the first terminal and the second terminal. The second intermediate layer, also having a centrally disposed opening is stacked above the first intermediate layer, and the centrally disposed openings define a chamber above the fusible element. The special layer is located between the first intermediate layer and the second intermediate layer and includes one or more geometric elements. The geometric elements divide the chamber into two sub-chambers, the first sub-chamber being above the second sub-chamber.
A fuse includes multiple stacked layers, a first terminal, and a second terminal. The first terminal is connected to one end of a fusible element and the second terminal is connected to the other end. The stacked layers include first and second intermediate layers and a special layer. The first intermediate layer, which has a centrally disposed opening, is stacked on the first terminal and the second terminal. The second intermediate layer, also having a centrally disposed opening is stacked above the first intermediate layer, and the centrally disposed openings define a chamber above the fusible element. The special layer is located between the first intermediate layer and the second intermediate layer and includes one or more geometric elements. The geometric elements divide the chamber into two sub-chambers, the first sub-chamber being above the second sub-chamb er.
A substrate assembly may include a power substrate, a chip, a clip, and a trimetal. The power substrate has a first direct copper bonded (DCB) surface connected to a ceramic tile. The chip is soldered onto the first DCB surface. The clip is attached to the power substrate and has a foot at one end and a recessed area at the other, opposite end. The foot is connected to the power substrate. The trimetal has a base, a trapezoid structure, and a clip portion. The base is soldered to the chip. The trapezoid structure is located above the base. The clip portion is located above the trapezoid structure and includes a projecting area. The recessed area of the clip fits into the projecting area of the trimetal.
An active/passive fuse module including a fuse having an electrically insulating fuse body, first and second endcaps disposed on opposing ends of the fuse body, a fusible element extending through the fuse body between the first endcap and the second endcap, and an arc quenching material disposed within the fuse body and surrounding the fusible element. The fuse module further includes a pyrotechnic interrupter (PI) coupled to the fuse body, the PI having a housing defining a shaft, a piston disposed within the shaft, a drive pin extending from the piston into the fuse body, the drive pin terminating in a cutter disposed adjacent the fusible element, and a pyrotechnic ignitor disposed within the shaft above the piston configured to detonate upon receiving an initiation signal from a controller, whereby the piston and the drive pin are forcibly driven through the shaft causing the cutter to separate the fusible element.
A pressure contact assembly includes a power substrate, a chip, and a lead. The power substrate has a surface connected to a ceramic tile and a cavity. The chip is soldered to the surface. The lead is to be inserted into the cavity and has a top portion to connect to an external device and a bottom portion to fit into the cavity.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
