This application belongs to the technical field of semiconductor devices, and relates to a pixel circuit, a control method, and an image sensor, including: at least two pixel units arranged in an array, wherein transmission transistors of two pixels of at least one pixel unit are connected to a corresponding first group of transmission control lines, and transmission transistors of other pixel unit are connected to a corresponding second group of transmission control lines. Therefore, the pixel circuit, the control method and the image sensor provided in the present application can control the density of phase focus of the image sensor by controlling the first group of transmission control lines and the second group of transmission control lines without changing the structure of the pixel, the structure is simple, and the optical performance is good.
H04N 25/704 - Pixels specially adapted for focusing, e.g. phase difference pixel sets
H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array
H04N 25/766 - Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
This application belongs to the technical field of semiconductor devices, and relates to a pixel circuit, a control method, and an image sensor, including: at least two pixel units arranged in an array, wherein transmission transistors of at least two pixels of at least one pixel unit are connected to a corresponding first group of transmission control lines, and a transmission transistor of one other pixel is connected to a corresponding second group of transmission control lines. Therefore, the pixel circuit, the control method and the image sensor provided in the present application can control the density of phase focus of the image sensor by controlling the first group of transmission control lines and the second group of transmission control lines without changing the structure of the pixel, the structure is simple, and the optical performance is good.
A pixel array, an image sensor, and a self-checking method of the image sensor are provided. The pixel array includes a photosensitive pixel region, a first reference pixel region and/or a second reference pixel region; the photosensitive pixel region includes M rows and N columns of pixels arranged in an array; the first reference pixel region includes n columns of first reference pixels disposed corresponding to N columns of pixels of the photosensitive pixel region; the second reference pixel region includes m rows of the second reference pixels disposed corresponding to the M rows of pixels of the photosensitive pixel region. The first reference pixel region and/or the second reference pixel region can be used to implement a real-time self-checking function of the readout circuit and/or the control circuit in the image sensor, check in real time whether the image signal output by the image sensor is correct.
H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array
H04N 25/46 - Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 25/683 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects by defect estimation performed on the scene signal, e.g. real time or on the fly detection
H04N 25/633 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
4.
Image sensor, image readout method for readout conversion circuit and electronic device
The present invention discloses an image sensor, an image readout method, and an electronic device. The image sensor comprises: a pixel array and a plurality of readout conversion circuits, the readout conversion circuit comprises: a comparison circuit for comparing an output signal of the column pixel with a ramp signal to obtain a first output signal and a second output signal; a selection module for selecting the first output signal during a first sampling count, and selecting the second output signal during a second sampling count; a counter for counting according to the first output signal and the second output signal to obtain total quantization value of the first sampling count and the second sampling count, so as to obtain actual signal quantization result according to the total quantization value. The image readout speed of the image sensor is improved.
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/616 - Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
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