An MEMS light valve, comprising a fixed grating (103) provided with a first light-pervious portion (104), and a movable grating (109) relative to the fixed grating (103) provided with a second light-pervious portion (117), as well as a central shaft (113). The movable grating (109) rotates about the central shaft (113), and the second light-pervious portion (117) overlap or stagger with the first light-pervious portion (104) with the rotating of the movable grating (109). Also disclosed are a display device comprising the MEMS light valve and forming method thereof. The advantages of the MEMS light valve and the display device are low friction, high sensitivity, and smaller size.
G02B 26/02 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
2.
DISPLAY DEVICE PROVIDED WITH MEMS LIGHT VALVE AND FORMING METHOD THEREOF
A display device provided with an MEMS light valve, comprising: a substrate (10), a fixed grating (20) located on the substrate (10), an MEMS light valve (30) for controlling the opening and closing of the fixed grating (20); a guide (21) is disposed on the substrate (10). The MEMS light valve (30) comprises: a movable grating (31), a movable electrode (32) and fixed electrodes (33, 34); the moveable grating is located in the guide (21) and is electrically connected to the guide (21) when contacting the guide (21); one end of the movable electrode (32) is fixedly connected with the movable grating (31), and the other end is suspended; and the fixed electrodes (33, 34) and the movable electrode (32) form a capacitor. When a potential difference forms between the fixed electrodes (33, 34) and the movable electrode (32), the movable electrode (32) drives the movable grating (31) to move in the guide (21), thereby opening and closing the fixed grating (20). Also disclosed is a method for forming the display device provided with an MEMS light valve. Therefore, the MEMS light valve sensitivity can be enhanced and reliability is improved.
G02B 26/02 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
3.
DISPLAY DEVICE PROVIDED WITH MEMS LIGHT VALVE AND FORMING METHOD THEREOF
A display device provided with an MEMS light valve, comprising: a substrate (40), a fixed grating (30) located on the substrate (40), an MEMS light valve (100) for controlling the opening and closing of the fixed grating (30); the MEMS light valve (100) comprises a first light valve (10) and a second light valve (20); the opening and closing of the fixed grating (30) is controlled via controlling the movement of the first light valve (10) and the second light valve (20), and the moving directions of the first light valve (10) and the second light valve (20) are opposite. Also disclosed is a method for forming a display device provided with an MEMS light valve. Thus the sensitivity of the MEMS light valve is improved.
G02B 26/02 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
An adder and an integrated circuit. The adder comprises: a plurality of MEMS switch components, the plurality of MEMS switch components being connected to implement an addition function. The structure of the adder of the present invention is simple, so the cost may be saved.
An inertial micro-electromechanical sensor and a manufacturing method thereof are disclosed. The manufacturing method includes: providing a semiconductor substrate (100), forming an interlayer dielectric layer on the semiconductor substrate (100), forming a cavity (135) in the interlayer dielectric layer, forming a fixing member and a driving electrode electrically insulated with the fixing member in the interlayer dielectric layer outside the cavity (135), and forming a mass block in the cavity (135). The mass block is electrically connected with the fixing member, and can perform movement relative to the driving electrode. The sensor and the manufacturing method thereof combine the micro-electromechanical sensor and the CMOS process, improve the quality and the inertia of the mass block of the micro-electromechanical sensor, and improve noise interference preventing capability of the micro-electromechanical sensor.
A micro-electro-mechanical system (MEMS) switch and a manufacturing method thereof are provided. The MEMS switch includes a semiconductor substrate (10); a switch chamber (100) which is formed on the semiconductor substrate (10) and includes a bottom dielectric layer (100a) and a top dielectric layer (100b); a first group switch contacts (101) which are formed on the bottom dielectric layer (100a); a second group switch contacts (102) which are formed on the top dielectric layer (100b); a mechanical arm (400) which includes an attaching end (400a) attached to the bottom dielectric layer (100a) and a cantilevered end (400b) on which a throwing knife (401) is formed. The throwing knife (401) is corresponded with the position of the first group switch contacts (101) and the second group switch contacts (102); when an electric field is applied in the switch chamber (100), the mechanical arm (400) is subjected to the driving electric field and then bended, such that the throwing knife (401) is connected to the first group switch contacts (101) or the second group switch contacts (102).
A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure (100) formed therein (S101); forming a first sacrificial layer (201) on the surface of the semiconductor substrate, the material of the first sacrificial layer is amorphous carbon (S102); etching the first sacrificial layer to form a first recess (301) (S103); covering and forming a first dielectric layer (401) on the surface of the first sacrificial layer (S104); thinning the first dielectric layer by a chemical mechnical polishing (CMP) process, until exposing the first sacrificial layer (S105); forming a micromechanical structure layer (500) on the surface of the first sacrificial layer and exposing the first sacrificial layer (S106), wherein a part of the micromechanical structure layer is connected to the first dielectric layer. The method avoids polishing the amorphous carbon, shortens the period of production, and improves the production efficiency.
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
A MEMS static memory and a MEMS programmable device are provided. The memory cell of the MEMS static memory comprises three MEMS switch devices, each of which includes a first terminal, a second terminal, a third terminal and a control terminal, wherein the control terminal is used for controlling the electrical conduction between the third terminal and one of the first and the second terminals. In the MEMS static memory cell, a low logic level and a high logic level are respectively input into the first terminal and the second terminal of the first MEMS switch device; the first terminal of the second MEMS switch device presents high impedance, the second terminal thereof is connected to the control terminal of the first MEMS switch device, the control terminal thereof is connected to a writing word line and the third terminal thereof is connected to a writing bit line; the first terminal of the third MEMS switch device presents high impedance, the third terminal thereof is connected to a reading bit line, the control terminal thereof is connected to a reading word line and the second terminal thereof is connected to the third terminal of the first MEMS switch device. The output signal of the MEMS static memory cell is completely provided by the high and low logic levels, thus improving the signal integrity.
G11C 23/00 - Digital stores characterised by movement of mechanical parts to effect storage, e.g. using ballsStorage elements therefor
G11C 11/50 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using actuation of electric contacts to store the information
A forming method for a Microelectromechanical System (MEMS) sensor is provided. The method includes: providing a substrate, on which some MEMS sensor regions and pads adjacent to each MEMS sensor region are formed, wherein the surface of the MEMS sensor regions is formed with MEMS sensor electrodes and the surface of the pads is formed with pad electrodes (S1); depositing a dielectric layer on the substrate, wherein a first cavity and a second cavity are formed in the dielectric layer, the first cavity exposes the surface of the MEMS sensor electrodes and a movable part is formed in the first cavity and the second cavity exposes the surface of the pad electrodes (S2); cutting adjacent MEMS sensor regions to separate them, wherein the notch at least penetrates through the second cavity to expose the pad electrodes and separate the adjacent MEMS sensor (S3). That only the notch is need to break through the second cavity can separate the MEMS sensor regions, so that the cutting difficulty of the MEMS sensor is reduced.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
An optical switch comprising: a substrate (10), a flexible cantilever (20) having a fixed end (21) being fixed into the substrate and a free end (22) being suspended, and a movable mirror (30) arranged on the free end of the flexible cantilever. The flexible cantilever is distended by the effect of a driving electric field, and the position of the movable mirror is thus shifted, causing the beam of incident light to be reflected to an emergence direction. The optical switch is structurally simple, convenient to control, and easy to manufacture. Also provided is a MEMS display. The optical switch is employed by the MEMS display as a pixel unit to constitute an optical switch array (300). Light generated by a backlight (200) is transmitted via the transparent substrate (100) and the light switch array to form an image. The MEMS display is characterized by sensitive response and rapid imaging.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
A MEMS display comprising a pixel array area (I) and a light source (II) being mutually independent from each other. The pixel array area comprises pixel units arranged in an array. When light generated by the light source is introduced onto the pixel array and routed via a multistage optical path switch, an image is projected from the pixel units. The MEMS display employs a dual-option optical path switch as an optical path routing node, and is characterized by sensitive response and rapid imaging.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
12.
LIQUID CRYSTAL ON SILICON DISPLAY UNIT, MANUFACTURING METHOD THEREOF AND COLOR FILTER STRUCTURE
A liquid crystal on silicon display unit, a manufacturing method thereof and a color filter structure are provided. The liquid crystal on silicon display unit comprises: a first filtering electrode (210) provided above a first reflecting electrode (207), a second filtering electrode (211) provided above a second reflecting electrode (208), and a third filtering electrode (212) provided above a third reflecting electrode (209). The first light of white light from outside is filtered by the first reflecting electrode (207) and the first filtering electrode (210), the second light of white light from outside is filtered by the second reflecting electrode (208) and the second filtering electrode (211), and the third light of white light from outside is filtered by the third reflecting electrode (209) and the third filtering electrode (212). The lights filtered by the first filtering electrode (210), the second filtering electrode (211) and the third filtering electrode (212) are combined into a color pixel. The materials of the first filtering electrode (210), the second filtering electrode (211), the third filtering electrode (212), the first reflecting electrode (207), the second reflecting electrode (208) and the third reflecting electrode (209) are metal, as a result, the filtering electrodes are more stable, and the reliability and the yield of the liquid crystal on silicon display unit can be improved.
A light modulator pixel unit and the manufacturing method thereof are provided. The pixel unit includes a top electrode formed on a substrate, a movable electrode and a bottom electrode. Under the control of a control circuit, the position of the movable electrode would deflect. When the movable electrode is positioned in a first position, a first light is diffracted on the top electrode; when the movable electrode is positioned in a second position, a second light is diffracted on the top electrode; when the movable electrode is positioned in a third position, a third light is diffracted on the top electrode. The said first light, second light and third light are lights of three primary colors. The light modulator pixel unit of the present invention can modulate lights of three colors and is applicable in the field of micro-display system.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G02B 26/00 - Optical devices or arrangements for the control of light using movable or deformable optical elements
14.
MICRO-ELECTRO-MECHANICAL MICROPHONE AND MANUFACTURING METHOD THEREOF
A micro-electro-mechanical microphone and manufacturing method thereof are provided in the invention. The micro-electro-mechanical microphone comprises: a diaphragm, which is formed on a surface of one side of a semiconductor substrate, exposed to the outside surroundings, and can vibrate freely by sensing the pressure generated by sound waves; an electrode plate with air holes, which is under the diaphragm; an isolation structure for fixing the diaphragm and the electrode plate; an air gap cavity between the diaphragm and the electrode plate, and a back cavity under the electrode plate and in the semiconductor substrate; a second cavity formed on the surface of the same side of the semiconductor substrate and in an open manner; the air gap cavity is connected with the back cavity through the air holes of the electrode plate; the back cavity is connected with the second cavity through an air groove formed in the semiconductor substrate. The micro-electro-mechanical microphone in the invention is formed on the surface of one side of the semiconductor substrate, and the manufacturing method thereof is compatible with CMOS technics, therefore the device is easy to be miniaturized and integrated into a semiconductor chip.
A fuse structure and a method for forming the same are provided. The method comprises the following steps: providing a semiconductor substrate (20) with a circuit structure formed on the semiconductor substrate (20) and a metal interconnection layer (22) formed on the circuit structure; and forming a fuse (33') on the metal interconnection layer (22) with an interconnection structure formed between the fuse (33') and the metal interconnection layer (22), wherein the fuse material is selected from polycrystalline germanium-silicon, polycrystalline germanium, amorphous silicon, amorphous germanium or amorphous germanium-silicon. Because the material of polycrystalline germanium-silicon, polycrystalline germanium, amorphous silicon, amorphous germanium or amorphous germanium-silicon has a high resistance, the required fusing current is low and the circuit structure can not be easily damaged. The chip area is reduced because the fuse structure is stacked on the metal interconnection layer.
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
16.
LIGHT MODULATOR PIXEL UNIT AND MANUFACTURING METHOD THEREOF
A light modulator pixel unit and a manufacturing method thereof are provided. The pixel unit includes a bottom electrode, a movable electrode and a top electrode. Under the control of a control circuit, the movable electrode would deflect to a first position, a second position and a third position respectively. When the movable electrode is positioned at the first position and a first light is incident to the light modulator pixel unit, the light reflected by the top electrode interferes destructively with the light which firstly transmits through the top electrode, then is reflected by the movable electrode and finally transmits through the top electrode. The principle of modulating a second light when the movable electrode is positioned at the second position and the principle of modulating a third light when the movable electrode is positioned at the third position are the same as the principle of modulating the first light when the movable electrode is positioned at the first position. The said first light, second light and third light are monochromatic lights at three specific wavelength ranges respectively. The light modulator pixel unit of the present invention can control monochromatic lights of three special wavelengths by time division, and enable color control and gray control. The unit is applicable in the field of projection display and panel system.
G02B 26/00 - Optical devices or arrangements for the control of light using movable or deformable optical elements
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
An optical path switch and an optical router are provided. The optical path switch comprises an input optical path (100), two output optical paths (201, 202), and an optical path switching element (300). The optical path switching element selectively routes the beam from the input optical path to one of the output optical paths. The optical path switching element comprises a semiconductor substrate (301), an inter-level dielectric layer (307) on the surface of the semiconductor substrate, a cavity (302) disposed in the inter-level dielectric layer, and an elastic light guiding plate (306) disposed in the cavity. One end of the cavity is connected with the input optical path, and the other end is separated into an upper cavity (304) and a lower cavity (305) by an isolating layer (303), wherein the upper cavity and the lower cavity are connected with the two output optical paths, respectively. The elastic light guiding plate made of reflecting material comprises a fixed end connected with the isolating layer, and a free end suspended in the cavity and towards the input optical path. The free end can move between the top and the bottom of the cavity.
G02B 6/35 - Optical coupling means having switching means
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the position or the direction of light beams, i.e. deflection
A Micro-Electro-Mechanical System (MEMS) device and its manufacturing method are provided. Said device comprises a MEMS component and said component comprises a main body (10) and a movable electrode (20). Said main body (10) contains a fixed electrode (110) and a cavity (30) and is covered by a first dielectric layer (400) which seals said cavity (30) into an enclosure. Said movable electrode (20) is connected with said main body (10) flexibly by a fixing piece and overhangs in said enclosure. Vias (405) are formed in said first dielectric layer (400) and filled with a second dielectric layer (500). The patent enables effective packaging for a MEMS device.
B81B 5/00 - Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
A projection display device includes a first display panel (23a), a second display panel (23b), a PBS (Polarization Beam Splitter) (22) with a first surface (22a) and a second surface (22b) opposite each other, a light recycling device (25a, 25b and 23b), and a projection lens (24). The PBS (22) transmits a first type parallel polarized light and reflects a second type parallel polarized light. The light recycling device (25a, 25b and 23b) transforms the first type parallel polarized light transmitted by the PBS (22) into the second type parallel polarized light which carries a second image information, then reversely transmits the second type parallel polarized light to the second surface (22b) of the PBS (22).The projection display device improves the light utilization efficiency and can be used for 3D display.
G02B 27/18 - Optical systems or apparatus not provided for by any of the groups , for optical projection, e.g. combination of mirror and condenser and objective
A gyroscope and a method for manufacturing the same are provided. The gyroscope comprises: a substrate (100), which is equipped with a bottom driving electrode (110) and a bottom measuring electrode (120) arranged surrounding the bottom driving electrode (110), and a dielectric layer (105) arranged on the substrate (100), in which a sealed cavity (130) is arranged. The sealed cavity (130) comprises: a central axis (140) arranged on the substrate (100); a support ring (150) which is arranged on the substrate (100) and can rotate around the central axis (140); a mass ring (170) which is arranged surrounding the support ring (150) and has the common central axis (140) with the support ring (150); cantilevers (160) which are connected with the support ring (150) and the mass ring (170) and support the mass ring (170) to be suspended in the closed cavity (130); elastic components (180) arranged in the area among the support ring (150), the mass ring (170) and two adjacent cantilevers (160); a top driving electrode (190) overlaying the support ring (150), the mass ring (170), the cantilevers (160) and the elastic components (180); a conductive plug (200) connected with the top driving electrode (190) on the elastic components (180) and the bottom driving electrode (110). The mass ring (170) comprises an insulation layer (1701) and a weight layer (1702) arranged under the insulation layer (1701). The stability and performance of the gyroscope have been improved greatly.
An inertial micro electromechanical sensor and a manufacturing method thereof are provided. The inertial micro electromechanical sensor includes a main body (10) and a mass block (200) which can move relatively to each other. The main body (10) includes a first main body (100) with a first surface (100a) and a second main body (300) which is perpendicular to and connected with the first surface. A first electrode (110) in the first main body (100) is parallel to the first surface (100a), and a second electrode (310) in the second main body (300) is perpendicular to the first surface (100a). The mass block (200) is suspended in the space formed by the second and first main body. The mass block (200) includes a third electrode (211) parallel to and relative to the first surface (100a), a fourth electrode (231) perpendicular to the first surface (100a), and a mass layer (233). The third electrode (211) and the fourth electrode (231) are connected and form a U-shaped groove. The mass layer (233) is filled in the U-shaped groove. The mass of the inertial mass block can be effectively increased, the precision of the micro electromechanical sensor can be improved, and the manufacturing cost can be reduced.
G01P 15/125 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by capacitive pick-up
G01C 19/56 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
H01L 29/84 - Types of semiconductor device controllable by variation of applied mechanical force, e.g. of pressure
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
22.
CRYSTAL OSCILLATOR AND MANUFACTURING METHOD THEREOF
A crystal oscillator and manufacturing method thereof are provided. The crystal oscillator includes: a semiconductor substrate; an interlayer dielectric layer located on the surface of the semiconductor substrate, an excitation plate and a positive electrode plug and a negative electrode plug being formed inside the interlayer dielectric layer, and the positive electrode plug and the negative electrode plug being located at the both sides of the excitation plate; a bottom cavity on top of the excitation plate, located between the positive electrode plug and the negative electrode plug; a vibrating crystal located on the surface of the interlayer dielectric layer, across the bottom cavity and connected with the positive electrode plug and the negative plug, wherein the vibrating crystal connects the positive electrode plug and the negative electrode plug at its both sides and besides the other both sides are the free ends and do not contact with the surrounding objects; an isolating layer located on top of the interlayer dielectric layer, a gap between the isolating layer and the vibrating crystal thus forming a top cavity; a covering layer formed on the surface of the isolating layer. The crystal oscillator is manufactured based on Complementary Metal-Oxide-Semiconductor Transistor (CMOS) technology, and can be integrated into the semiconductor chip easily and can meet the requirement for the miniature components.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/15 - Constructional features of resonators consisting of piezoelectric or electrostrictive material
A charge pump includes a first voltage input end (Vin), a second voltage input end, a voltage output end (Vout), at least a fast capacitor (CF), an energy storing capacitor(CR) and a first group of MEMS switches(S11), a second group of MEMS switches(S12), a third group of MEMS switches(S21). The three groups of MEMS switches are controlled by control signals. The fast capacitor is connected to the first voltage input end and the second voltage input end through the first group of MEMS switches, and connected to the first voltage input end or the second voltage input end through the second group of MEMS switches. The energy storing capacitor is connected to the fast capacitor through the third group of MEMS switches and to the voltage output end. The energy storing capacitor is also connected to the second voltage input end. The fast capacitor is charged through the first and the second voltage input ends when the control signals control the first group of the MEMS switches to be closed and the second and the third groups of the MEMS switches to be opened. The energy storing capacitor is charged through the fast capacitor and the second voltage input ends when the control signals control the first group of the MEMS switches to be opened and the second and the third groups of the MEMS switches to be closed. The charge pump improves energy converting efficiency and reduces power consumption.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
A stacked-gate non-volatile flash memory cell, a memory device including the memory cell, and a manufacturing method thereof are provided. The memory cell includes a semiconductor structure and a movable switch (200), wherein the semiconductor structure includes an extended floating gate structure, and an interlayer dielectric layer (114) with an opening (1204) through which the extended floating gate structure is exposed; meanwhile, the movable switch (200) includes a support component (210) and a conductive interconnection component (220), the support component (210) is located on the periphery of the conductive interconnection component and connected with the interlayer dielectric layer, and the conductive interconnection component is floating over the opening. When a voltage is applied to the conductive interconnection component, the conductive interconnection component is electrically connected with the extended floating gate structure, so that the advantages of simple control circuit, low manufacturing cost, high reliability, low power consumption and high efficiency are obtained.
A single-gate non-volatile flash memory cell, a memory device including the memory cell, and a manufacturing method thereof are provided. The memory cell includes a semiconductor structure and a movable switch(200), wherein the semiconductor structure includes a floating-gate structure, and an interlayer dielectric layer(130) with an opening(1204) through which the floating-gate structure is exposed; the movable switch(200) includes a support component(210) and a conductive interconnection component(220),the support component(210) is located on the periphery of the conductive interconnection component(220) and connected with the interlayer dielectric layer(130), and the conductive interconnection component(220) is floating over the opening(1024). When a voltage is applied to the conductive interconnection component(220), the conductive interconnection component(220) is electrically connected with the floating-gate structure, so that the advantages of simple control circuit, low manufacturing cost, high reliability, low power consumption and high efficiency are obtained.
A micro electro mechanical system (MEMS) device and a method of forming the same are provided. The MEMS device comprises a semiconductor substrate (100); a well region (110) formed in the semiconductor substrate (100); a source region(111), a drain region (112) and a channel region (113) formed in the well region (110); an isolating layer (120,130,140) formed on the surface of the source region (111) and the drain region (112); a gate dielectric layer (150) formed on the surface of the channel region (113); and a gate electrode layer (170) formed above the gate dielectric layer (150), a gap is provided between the gate dielectric layer (150) and the gate electrode layer (170), and the gap width corresponds to the channel region width. The method of forming MEMS device can be compatible with a conventional semiconductor forming process, without redeveloping a new type material and a new fabrication process. The MEMS device has a high withstand voltage performance, and a low leakage current of the gate electrode.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
A power amplifier and a bridge circuit thereof. The power amplifier includes a comparator (1), a bridge circuit (2) and a low pass filter (3). The comparator (1) receives a first analog signal, compares the first analog signal with a reference signal, and outputs a square wave signal. The bridge circuit (2) amplifies the square wave signal, and outputs the amplified square wave signal. The low pass filter (3) converts the amplified square wave signal to a second analog signal. The bridge circuit (2) includes a first micro electro mechanical systems (MEMS) switch (24) and a second MEMS switch (25). The first MEMS switch (24) and the second MEMS switch (25) are turned on respectively when the square wave signal has different polarities, and output a first voltage signal and a second voltage signal respectively. The amplified square wave signal includes the first voltage signal and the second voltage signal which are alternately outputted. The power amplifier uses MEMS switches instead of MOS transistors in existing power amplifiers, therefore has low power consumption, small volume and low cost.
patents