The invention concerns a growth substrate, in particular in the form of a wafer, comprising a growth surface configured to epitaxially deposit a plurality of semiconductor material layers thereupon and an edge surface along at least portions of the periphery of the growth surface. The growth substrate also comprises a support surface opposite the growth side, said resting side configured to be arranged upon an in particular heatable plate. A circumferential side surface connects the support surface with the edge surface. In accordance with the proposed principle, the edge surface comprises a step adjacent to the growth surface such that the growth surface is elevated with regard to the edge surface.
A structure (1) comprising a nanocrystal (2) converting electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, and a barrier layer (3) at least partially surrounding the nanocrystal (2) is specified, wherein the barrier layer (3) is bonded to the nanocrystal (2), and the barrier layer (3) is configured to prevent oxygen and/or water reaching the nanocrystal (2). Furthermore, a method for producing a structure (1) and a light emitting component (7), in particular comprising a micro-LED, are specified.
The invention concerns a light emitting device comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region arranged between the first and the second layer. The semiconductor layer stack is of an InGaAlP material system. The active region comprises a quantum well arranged between a first and a second barrier layer and the active region comprises a central region and an edge region laterally surrounding the central region. Each of the central region and the edge region, and in particular a quantum well portion of the central region and the edge region, comprises a dotation with a first dopant such that the light emitting device is configured to emit light with a wavelength between 540 nm and 560 nm.
The invention concerns a light emitting device, in particular µLED, comprising a semiconductor layer stack with a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and the second layer. The semiconductor layer stack has a bottom surface, a top surface as well as side surfaces connecting the bottom surface and the top surface. The light emitting device further comprises a bottom contact layer arranged on the bottom surface of the semiconductor layer stack electrically contacting the second layer and a top contact layer arranged on the top surface of the semiconductor layer stack electrically contacting the first layer. A passivation structure encapsulates the semiconductor layer stack in a circumferential direction and covers the side surfaces of the semiconductor layer stack, the passivation structure comprising at least one anti-aging layer as well as at least one passivation layer, the passivation layer being arranged between the anti-aging layer and the side surfaces. A first end face of the passivation layer adjacent to the top surface is covered by one of the top contact layer, the anti-aging layer, or a further anti-aging layer.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
An optoelectronic device for detecting a gas is specified. According to one embodiment, the optoelectronic device (1) for detecting a gas comprises a radiation-emitting element (4) configured for emitting an electromagnetic radiation, a measurement unit (5) comprising a measurement region (51) and a reference region (52), and a detector unit (6) comprising at least a first photodetector region (61) and a second photodetector region (62), wherein the measurement region (51) is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element (4) and the first photodetector region (61), wherein the reference region (52) is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element (4) and the second photodetector region (62), and wherein the optoelectronic device (1) is surface mountable. In particular, the radiation-emitting element (4) comprises a micro-LED.
G01N 21/78 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01N 21/77 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
6.
PHOTONIC DEVICE COMPRISING AN ORDERED PHOTONIC STRUCTURE INCLUDING A FLUORESCENT MATERIAL
A photonic device (10) comprises a light source (15) configured to emit pump radiation (17), a coupling region (106) comprising an ordered photonic structure (105) comprising a pattern of a first material (112) embedded in a matrix material (110), and a photonic integrated circuit (120). The first material (112) or the matrix material (110) is a fluorescent material. The fluorescent material is configured to receive the pump radiation (17) and to emit converted radiation (18) towards the photonic integrated circuit (120).
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
7.
SEMICONDUCTOR BODY, SEMICONDUCTOR LASER AND METHOD FOR PRODUCING A SEMICONDUCTOR LASER
The invention relates to a semiconductor body having an n-doped semiconductor layer (3), a p-doped semiconductor layer (4) and an active region (5). The active region (5) is arranged at least in some locations between the n-doped semiconductor layer (3) and the p-doped semiconductor layer (4). In a region (6) arranged on a side of the active region (5) facing away from the n-doped semiconductor layer (3), an electrode density is higher than a hole density. The invention also relates to a semiconductor laser and a method for producing a semiconductor laser.
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01S 5/02 - Structural details or components not essential to laser action
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
8.
HOUSING WITH A LASER ARRANGEMENT, AND METHOD FOR PRODUCING A HOUSING WITH A LASER ARRANGEMENT
The invention relates to a housing with a laser arrangement, having a lid, which comprises a portion transparent to laser radiation, and three substrates. Each substrate has at least one edge-emitting laser burr that is in the form of a resonator and has an output facet for the output of laser radiation at one wavelength, with the wavelengths of the laser burrs being different. At least one of the first, second and third substrates comprises at least one mirror element for deflecting, in the direction of the transparent portion, the laser radiation output by the corresponding edge-emitting laser burr. Moreover, each of the three substrates has a side face that is adjacent to the respective output facet or corresponds to the latter, and the side faces of two of the three substrates are at least partially adjacently opposite one another.
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/185 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
The present disclosure relates to a circuit (200) including: an output terminal (208) configured to be coupled with a load; a power source (202) configured to generate current according to a current ramp, such that during a predefined time period the generated current assumes a plurality of different current values in a range of current values from a minimum current value to a maximum current value; a switch element (210) configured to selectively enable or disable a delivery of the generated current to the output terminal (208); and a control circuit (212) configured to control the switch element (210) to deliver a predefined average current value at the output terminal (208) over the predefined time period.
H05B 45/48 - Details of LED load circuits with an active control inside an LED matrix having LEDs organised in strings and incorporating parallel shunting devices
A device (1) is specified. The device (1) comprises an electronic component (2) with an outer surface (21), and a barrier structure (3) adjacent to the outer surface (21), wherein the barrier structure (3) at least partially surrounds at least parts of the outer surface (21), and the barrier structure (3) is configured to influence a lateral spreading of a medium (4) which is arranged on the outer surface (21). In particular, the electronic component is a micro-LED. Furthermore, a method for producing a device (1) is specified.
A display device includes a substrate; a first portion of a control matrix comprising first electrodes; a plurality of light-emitting diode (LED ) devices electrically connected to the first electrodes of the control matrix; a second portion of the control matrix disposed over the plurality of LED devices, the second portion of the control matrix comprising second electrodes; one or more controller chips comprising first and second terminals and arranged along a periphery of the control matrix electrically connected to the first electrodes of the control matrix and the second terminal electrically connected to the second electrodes of the control matrix; wherein the control matrix, and plurality of LED devices, and the one or more controller chips are disposed on the substrate.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/49 - Interconnections, e.g. wiring lines or terminals
12.
ILLUMINATION AND SENSING UNIT, DISPLAY AND CONTROL DEVICE AND METHOD FOR OPERATING A DISPLAY AND CONTROL DEVICE
An illumination and sensing unit (1) comprising the following features is provided. - a first plurality of light emitting diode chips (2) configured for emitting visible light during operation, - a second plurality of light emitting diode chips (3, 3', 3'') operable to emit electromagnetic radiation of a first wavelength range or to detect electromagnetic radiation of the first wavelength range. Further, a display and control device and a method for operating a display and control device are provided.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
13.
AUTOMOTIVE MODULES AND METHODS FOR CONTROLLING THEREOF
An automotive apparatus (100) includes a heatsink (110); a lighting module (120) coupled to the heat sink (110), the lighting module (120) comprising one or more light sources (125), a light source driver (124) for driving the one or more light sources (125); at least one microlens array (140) comprising a plurality of microlenses comprising a plurality of sections, wherein each microlens array section is configured to project an image (451, 452) using light from the one or more light sources (125); a collimating assembly (130) arranged between the lighting module (120) and the at least one microlens array (140) comprising: one or more collimators (335) corresponding respectively to the one or more light sources (125), wherein each of the one or more collimators (335) is aligned in a light path from a corresponding one of the one or more light source (125) and the at least one microlens array (140).
F21S 43/20 - Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by refractors, transparent cover plates, light guides or filters
B60Q 3/60 - Arrangement of lighting devices for vehicle interiorsLighting devices specially adapted for vehicle interiors characterised by optical aspects
F21S 43/50 - Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by aesthetic components not otherwise provided for, e.g. decorative trim, partition walls or covers
F21S 45/47 - Passive cooling, e.g. using fins, thermal conductive elements or openings
The invention concerns a light emitting device comprising a semiconductor layer stack with a first layer of a first doping type, a second layer of a second doping type, and an active region arranged between the first and the second layer. The light emitting device further comprises a bottom contact layer arranged on a bottom surface of the semiconductor layer stack electrically contacting the second layer, a first electric contact electrically contacting the bottom contact layer, and a second electric contact electrically contacting the first layer. On or above a top surface of the semiconductor layer stack opposite the bottom surface a converter layer is arranged being configured to convert light of a first wavelength generated in the active region into light of a second wavelength. The light emitting device further comprises measures to physically reduce the area where light escapes from the semiconductor layer stack into the converter layer, such that the converter layer can be designed smaller, in particular smaller than the lateral dimensions of the top surface.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
The invention concerns a µLED arrangement comprising a layer stack having a first layer of a first doping type and second layer of a second doping type and an active layer structure in between. A first contact covers a surface of the first layer, said surface facing away from the active layer structure. A semiconductor layer forms a µlens deposited on a surface of the second layer, said surface facing away from the active layer structure. The layer stack comprises first mesa etched sidewalls, extending from the first layer along the active layer structure towards the second layer and second mesa etched sidewalls, said sidewalls forming the µlens.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
16.
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
The invention relates to a semiconductor component (1) comprising: a housing (5) having a mounting face (6); a lead frame (2) which is embedded in the housing (5) and has at least two electrical contact pads (7, 8); and at least one semiconductor chip (13) which is located in the housing (5) and is electrically connected to the contact pads (7, 8). The lead frame (2) has a solder control structure (2) having a recess (11) which is accessible from the mounting face (6) and at least one side wall (10) of the housing (5) and is provided for receiving a solder material. The contact pads (7, 8) and the solder control structure (9) are formed by separate and non-connected portions of the lead frame (2).
The invention concerns an optoelectronic device comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region between the first and second layer, the semiconductor layer stack comprising first side surfaces connecting a bottom surface and a top surface. The optoelectronic device further comprises a bottom contact element arranged on the bottom surface, a dielectric layer arranged on the first side surfaces and in particular extending partially onto the bottom surface, and a reflective contact layer arranged on the dielectric layer electrically contacting the bottom contact element. The dielectric layer thereby comprises second side surfaces opposite the first side surfaces with the second side surfaces having at least in portions a different angle relative to the bottom surface than the first side surfaces.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
18.
SURFACE EMITTER AND METHODS FOR PRODUCING SURFACE EMITTERS
The invention relates to a surface emitter (100) and methods (200, 400, 600) for producing surface emitters (100), wherein one method for producing surface emitters comprises: providing a substrate structure, comprising: a substrate having a plurality of depressions and a plurality of ridges, each ridge of which is arranged between two depressions directly adjacent to one another from the plurality of depressions, and a plurality of epitaxial layers, each epitaxial layer being arranged over a ridge from the plurality of ridges and extending beyond the ridge in a lateral direction in such a way that each of the two depressions directly adjacent to one another forms an associated gap between the epitaxial layer and the substrate; forming a plurality of surface emitter structural elements by forming at least one surface emitter structural element over a top side of each epitaxial layer, said top side facing away from the substrate; and forming a mirror structure at least over the plurality of surface emitter structural elements and over exposed sections of an underside of each epitaxial layer, said underside facing the substrate. Figure 3A
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
19.
TEST ARRANGEMENT AND TEST METHOD FOR MEASURING A SEMICONDUCTOR WAFER
A test arrangement (100) for measuring a semiconductor wafer (40) is specified, wherein the test arrangement (100) comprises : a carrier (1) for placing the semiconductor wafer (40), wherein the carrier (1) includes : an electrically insulating base body (2), a plurality of first conductive lines ( 3 ) and a plurality of second conductive lines ( 4 ), which are arranged on the base body (2) so as to face the semiconductor wafer (40) and which cross each other at crossing points (C), a test device (10), which comprises at least one pair of a first contact element (11) assigned to the first conductive lines (3) and a second contact element (12) assigned to the second conductive lines ( 4 ), wherein the at least one pair of the first contact element (11) and the second contact element (12) defines a test area (A) on the semiconductor wafer (40) comprising at least one crossing point (C), wherein the first conductive lines (3) are provided for supplying a driving current to the semiconductor wafer (40) at the crossing points (C), and the second conductive lines (4) are provided for determining an electrical characteristic value of the semiconductor wafer (40) at the crossing points (C). Moreover, a test method for measuring a semiconductor wafer is specified.
A method for operating a driver monitoring system with the following steps is provided: - defining a plurality of predetermined points (8) within a vehicle cabin (4), - illuminating the plurality of predetermined points (8) with the plurality of light dots (7) projected by the dot projector (2) according to a predetermined pattern (12), - detecting light of the light dots (7) reflected by the predetermined points (8) with the camera (3) such that a calibration pattern (9) is generated, - illuminating the vehicle cabin (4) with the plurality of light dots (7) projected by the dot projector (2) according to the predetermined pattern (12), - detecting the light of the light dots (7) reflected within the vehicle cabin (4) with the camera (3) such that an operation pattern (10) is generated, - comparing the operation pattern (10) with the calibration pattern (9), and - calibrating extrinsic parameters and/or intrinsic parameters of the dot projector (2) and/or extrinsic parameters and/or intrinsic parameters of the camera (3) when the operation pattern (10) differs from the calibration pattern (9). Further, a driver monitoring system is provided.
A lighting module including one or more light sources, a controller configured to cause the lighting module enter a first operating mode. When the lighting module is in the first operating mode, the controller is configured to allow the lighting module to receive messages. In response to receiving a skip message while the lighting module is in the first operating mode, the controller is configured to cause the lighting module to enter a second operating mode. In response to receiving a data message while the lighting module is in the first operating mode, the controller is configured to cause the lighting module to enter a third operating mode. When the lighting module is in the second operating mode, the controller is configured to cause the lighting module to retransmit or forward one or more messages received while in the second operating mode.
A light-emitting diode (LED) module includes one or more LEDs; communication circuitry configured to communicate with a plurality of LED modules using differential signaling; an input port and an output port for communicating using the differential signaling; testing circuitry configured to test a differential signaling connection through the input port or output port to determine a connection failure between the LED module and a neighboring LED module of the plurality of LED modules. The communication circuitry is configured to selectively switch, in response to the testing circuitry determining a connection failure of the differential signaling connection with the neighboring LED module, from communicating using differential signaling to communicating using single- ended signaling with the neighboring LED module.
H05B 47/18 - Controlling the light source by remote control via data-bus transmission
H05B 47/23 - Responsive to malfunctions or to light source lifeCircuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant for protection of two or more light sources connected in series
The invention relates to an optoelectronic module (1), comprising a luminescence diode (10) which is designed to emit unpolarised emission radiation (101) in an emission angle range (β), and a functional element (20). The functional element (20) separates the emission radiation (101) into a first radiation (102A) with a first polarisation and a second radiation (102B) with a second polarisation. The first radiation (102A) and the second radiation (102B) emerge on a common output coupling side (20A) of the functional element (20). The functional element (20) deflects the first radiation (102A) into a first angular range (ω1) and the second radiation (102B) into a second angular range (ω2) different from the first angular range (ω1).
A display device (1) is provided that comprises a substrate (10) comprising a main surface (12) and a plurality of emitters (20) arranged in pixels (2) on the main surface (12) of the substrate (10), wherein each emitter (20) comprises a light emitting diode, LED, that is configured to emit light during operation. It further comprises a sensor (30) in at least one pixel (2), the sensor (30) being configured to sense light during operation. It further comprises a filter (70) arranged on or above the sensor (30), the filter (70) being configured to transmit light of a predetermined wavelength range to the sensor (30). Methods of operating and manufacturing such a display device (1) are also provided. The emitters and sensors can be implemented as micro-LEDs.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
25.
DISPLAY DEVICE, METHOD OF OPERATING A DISPLAY DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE
A display device (1) comprises a substrate (10) comprising a main surface (12), and a plurality of emitters (20) arranged in pixels (2) on the main surface (12) of the substrate (10), wherein each emitter (20) comprises a light emitting diode LED, that is configured to emit light during operation. It further comprises a sensor (30) in at least one pixel (2), the sensor (30) being configured to sense light during operation. It further comprises at least one evaluation circuit (40) being configured to evaluate proximity of an object (100) above the display device (1) based on light sensed by the sensor (30). Further, a method of operating a display device (1) and a method of manufacturing a display device (1) is provided. The emitters and sensors can be implemented as micro-LEDs.
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
26.
SURFACE EMITTER AND METHOD FOR PRODUCING A SURFACE EMITTER
The invention relates to a surface emitter (100) and to a method (300, 400) for producing a surface emitter (100), wherein the surface emitter (100) comprises in one embodiment: a substrate (108); a first mirror structure (104) and a second mirror structure (106), which are located above the substrate (108); a light-emitting structure (102), which is located between the first mirror structure (104) and the second mirror structure (106), wherein the light-emitting structure (102) is designed to emit light, and wherein the first mirror structure (104) and the second mirror structure (106) are designed to reflect the light emitted by the light-emitting structure (102); and a grid structure (110), which comprises a plurality of grid elements (112) which are arranged periodically and are embedded in the substrate (108), wherein the grid structure (110) is designed to stabilise the polarisation of the emitted light.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/02 - Structural details or components not essential to laser action
27.
METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, PANEL AND OPTOELECTRONIC COMPONENT
A method for producing an optoelectronic component comprises providing a panel having a substrate and an encapsulation layer arranged on a top side of the substrate. The panel comprises a plurality of component sections. Each component section comprises a section of the substrate, an optoelectronic semiconductor chip arranged on a top side of the section of the substrate, a wavelength conversion layer arranged on a top side of the optoelectronic semiconductor chip and a section of the encapsulation layer embedding the optoelectronic semiconductor chip and the wavelength conversion layer. Top sides of the wavelength conversion layers are at least partly not covered by the encapsulation layer. The method further comprises forming a DBR layer on a top side of the encapsulation layer and on the top sides of the wavelength conversion layers and separating the component sections to obtain a plurality of optoelectronic components.
The invention concerns a µLED comprising a mesa etched layer stack with a first layer of a first doping type, a second layer of a second doping type having a main emission surface, an active layer arranged in between. A dielectric layer is disposed on inclined sidewalls of the first, second and active layer and partially a surface opposite the main emission surface. A first contact contacts through a first opening in the first layer and a second contact contacts through a second opening in the second layer. A mirror layer is embedded within the material of the dielectric layer disposed on the inclined sidewalls of the first, second and active layer and partially the surface opposite the main emission surface, the mirror layer laterally separated from the first and the second contact by a portion of the material of the dielectric layer.
The invention concerns a display arrangement comprising a pixel array having a plurality of pixels, at least some of the plurality of pixels each comprising two µLEDs configured for emitting light in the red spectrum with a first color filter comprising a large transmittance in the red spectrum arranged over a first of the two µLEDs and a second color filter comprising a large transmittance in the green spectrum arranged over a second of the two µLEDs. A third µLED is configured to emit light in the blue spectrum and a fourth µLED configured to emit light in the green spectrum. The display arrangement is configured to operate the at least some of the plurality of pixels such that during an emission mode, the first µLED, the third µLED and the fourth µLED are biased in forward direction; and during a sensing mode, the first µLED, the second µLED and the third µLED are biased in reverse direction.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
30.
DISPLAY ARRANGEMENT AND METHOD FOR OPERATING A DISPLAY ARRANGEMENT
The invention concerns a display arrangement comprising a pixel array with a plurality of pixels (10), at least some of the plurality of pixels each comprising a first and a second pLED for emitting light in the red spectrum (100r, 101r), a third pLED for light in the blue spectrum (100b) and a fourth pLED for light in the green spectrum (100g). The first and the second pLED are separated by one of the third and fourth LED. The display arrangement is configured to operate the at least some of the plurality of pixels in an emission mode, in which at least one of the first and second pLED, the third pLED and fourth pLED are biased in forward direction; and configured to operate a first subset of at least some of the plurality of pixels in a sensing mode, in which one of the third and fourth pLEDs of the first subset are biased in forward direction; and at least one of the first and second pLEDs of the first subset are biased in reverse direction or zero biased.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
An optoelectronic device is provided, which comprises a carrier (2), a housing (3), an optoelectronic component (4), and a reflective layer (5). The carrier (2) comprises a first part (21), a second part (22) and a third part (23), the first part (21) being located between the second part (22) and the third part (23) and being laterally spaced apart from the second part (22) and the third part (23). The housing (3) comprises a side wall (31) defining a cavity (32) and a bottom portion (33) in the cavity (32), the bottom portion (33) mechanically connecting the first part (21) to the second part (22) and the third part (23). The optoelectronic component (4) is arranged on a mounting surface (21a) of the first part (21). A boundary structure (6) is located between the side wall (31) of the housing (3) and the optoelectronic component (4), the boundary structure (6) being provided by the first part (21) of the carrier (2) and/or by the bottom portion (33) of the housing (3). The reflective layer (5) covers the side wall (31) of the housing (3) and the boundary structure (6), the boundary structure (6) being configured to prevent material of the reflective layer (5) from creeping onto the optoelectronic component (4). Further, a method for manufacturing an optoelectronic device is provided.
The invention concerns a display arrangement (1) comprising a pixel array with a plurality of pixels (10), at least some of the plurality of pixels each comprising first and a second μLED for light in the red spectrum, a third μLED for light in the blue spectrum and a fourth μLED for light in the green spectrum. The first and the second μLED are separated by one of the third and fourth LED. A control unit (13) is configured to operate the at least some of the plurality of pixels in a display mode, in which at least one of the first and second µLED, the third μLED and fourth μLED are biased in forward direction; and further configured to operate a first subset of at least some of the plurality of pixels in a sensing mode, in which the fourth μLED of the first subset are biased in forward direction; and pixels of a second subset partially adjacent to the pixels of the first subset in an adjusted sensing mode, in which at least one of the first and second μLEDs of the second subset are in reverse direction.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
G06V 10/143 - Sensing or illuminating at different wavelengths
33.
SEMICONDUCTOR ELEMENT, SEMICONDUCTOR COMPONENT, AND METHOD FOR PRODUCING A SEMICONDUCTOR ELEMENT OR SEMICONDUCTOR COMPONENT
The invention relates to a semiconductor element (1) comprising the following: - a semiconductor chip (2), which has a first contact surface (21) and a second contact surface (22) on a bottom side (2B), wherein the first contact surface (21) and the second contact surface (22) are separated from one another by an intermediate space (27), - a carrier element (4) on which the semiconductor chip (2) is arranged, wherein the bottom side (2B) faces the carrier element (4), and - a connection layer (3), which - is arranged between the carrier element (4) and the semiconductor chip (2) and connects the semiconductor chip (2) to the carrier element (4), - is anisotropically electrically conductive and - horizontally overlaps with the first contact surface (21) and the second contact surface (22) and extends across the intermediate space (27). The invention also relates to a semiconductor component (10) having a plurality of semiconductor chips (2), and to a method for producing a semiconductor element (1) or semiconductor component (10).
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
34.
OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE
An optoelectronic semiconductor device (1) is specified with: - a semiconductor chip (2) which, in operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface (3), and - a color setting structure (4) comprising a matrix material (5), a conversion element (6) and a filter element (7), wherein the conversion element (6) converts at least the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and the filter element (7) comprises a higher transmission for radiation of the first wavelength range compared to a radiation having a higher wavelength. Further, a method of manufacturing an optoelectronic semiconductor device is provided.
A method for producing a structure is specified. According to one embodiment, the method comprises providing a nanocrystal configured to convert a primary radiation into a secondary radiation, and forming an encapsulation around the nanocrystal using a coordination-complex, wherein the encapsulation comprises an oxide. Furthermore, a structure and an optoelectronic device are specified.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
Vertical cavity surface emitting laser component are provided, including a light emitting structure configured to emit a light of a frequency, and at least one mirror structure on or above the light emitting structure, wherein the mirror structure comprises a plurality of optical nano-elements, wherein the optical nano-elements are configured to comprise a first reflectivity for light of the frequency having a first chirality and a second reflectivity for light of the frequency having a second chirality, wherein the second chirality is opposing to the first chirality, and wherein the first reflectivity is larger than the second reflectivity.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Embodiments of the invention relate to a semiconductor chip (10), the sidewall (109) of which has a region which protrudes laterally by more than 2 µm in relation to a vertically adjoining sidewall region and forms an anchor structure (113). Further embodiments relate to a semiconductor component (20) comprising the semiconductor chip (10), a support (125) and an adhesive (128) for fastening the semiconductor chip (10) to the support (125). The adhesive (128) laterally adjoins the anchor structure (113) and extends vertically as far as a region of the anchor structure (113) that is remote from the support (125).
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
A vertical cavity surface emitting laser component is provided, including a light emitting structure configured to emit a light of a frequency, a dielectric layer on or above the light emitting structure; at least one mirror structure on or above the dielectric layer, and an encapsulation layer. The mirror structure includes a plurality of optical nano- elements. An interspace is formed between adjacent optical nano-elements. Any one of a structure of the optical nano- elements and an arrangement of the arrangement positions of the optical nano-elements are configured such that the plurality of nano-elements includes an optical resonance frequency corresponding to the frequency of the light emitted by the light emitting structure. The encapsulation layer is formed at least in the interspace between the plurality of optical nano-elements.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
40.
µLED COMPRISING A MULTILAYER THIN-FILM LIGHT OUTCOUPLING STRUCTURE
The invention concerns an optoelectronic device, in particular μLED, comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region between the first and second layer, wherein the semiconductor layer stack comprises a bottom surface as well as a light emitting surface opposite the bottom surface. The optoelectronic device further comprises a light outcoupling structure arranged above or on the light emitting surface, the light outcoupling structure comprising at least a first, a second and a third layer wherein : at least two of the first, second and third layer comprise a material with a different refractive index; the first, second and third layer comprise a thickness of less than the wavelength of light generated within the semiconductor layer stack when applied with a respective current; and at least two of the first, second and third layer comprise a different thickness.
The invention concerns an optoelectronic device, in particular a µLED, comprising a layer stack based on a phosphide material system comprising a p-doped side and an n-doped side, respectively with an active layer in between. The layer stack comprises a mesa structure exposing sidewalls of at least p-doped side and the active layer. A layer of the n-doped side extends in a lateral direction beyond sidewalls of the mesa structure of the layer stack. A dielectric layer covers a sidewall area of the p-doped layers and optionally a portion of a top surface of p-doped side. An n-doped regrowth layer covers at least a portion of the sidewall of the active layer and contacting the n-doped side. The device also comprises a p-contact on the top surface of p-doped side and an n-contact facing away from a main emission side contacting the n-doped layer particularly laterally displaced in regard to the mesa structure.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
42.
TWO-SIDED ETCHED LIGHT GENERATING STRUCTURE AND OPTOELECTRONIC DEVICE
The invention concerns a light generating structure comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type as well as an active region between the first and second layer. The semiconductor layer stack comprises a light emitting surface, a bottom surface opposite the light emitting surface and first side wall portions extending from the bottom surface into the direction of the light emitting surface. The first side wall portions comprise portions of the first layer, the second layer and the active region. The light generating structure further comprises a regrowth layer covering at least the bottom surface and the first side wall portions and a bottom contact element arranged on the regrowth layer opposite the first layer. The light generating structure comprises second side wall portions different from the first side wall portions extending from the light emitting surface into the direction of the bottom surface, wherein the second side wall portions comprise at least portions of the regrowth layer.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
A method for operating a radiation emitting device with the following steps is provided: - determining a temperature corrected forward voltage (VfTcor(0,y)) of an edge pixel (7) arranged in an edge region (8) of the radiation exit area (1), - determining a position and temperature corrected forward voltage (Vincrease(0,y)) of the edge pixel (7) from the temperature corrected forward voltage (VfTcor(0,y)), - determining a position and temperature corrected forward voltage (Vincrease(40,160)) of a hot spot pixel (16) being arranged in a hot spot region (17) of the radiation exit area (1) from the position and temperature corrected forward voltage of the edge pixel, - determining a temperature of the hot spot pixel (16) from the position and temperature corrected forward voltage (Vincrease(40,160)) of the hot spot pixel (16).
H05B 45/56 - Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDsCircuit arrangements for operating light-emitting diodes [LED] responsive to LED lifeProtective circuits involving measures to prevent abnormal temperature of the LEDs
G09G 1/00 - Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
44.
PHOTO-POLYMERIZATION SYSTEM AND METHOD FOR PRODUCING A THREE-DIMENSIONAL OBJECT
A photo-polymerization system (10) comprises a vat (120) for housing a photocurable liquid (123) and an array of pixels (102). The array comprises a plurality of pixels (102), wherein each of the pixels (102) comprises a first and a second LED (105, 106) emitting different wavelengths, respectively. The array is arranged so as to be facing the vat (120).
B29C 64/135 - Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask the energy source being concentrated, e.g. scanning lasers or focused light sources
B29C 64/194 - Processes of additive manufacturing involving additional operations performed on the added layers, e.g. smoothing, grinding or thickness control during lay-up
B29C 64/282 - Arrangements for irradiation using multiple radiation means, e.g. micromirrors or multiple light-emitting diodes [LED] of the same type, e.g. using different energy levels
A vertical cavity surface emitting laser, VCSEL, component is provided having a light emitting structure, at least one mirror structure, and a metallic layer arranged between the light emitting structure and the mirror structure, or acting as part of the mirror structure. The VCSEL component is configured to transmit light emitted from the light emitting structure towards the mirror structure through the metal layer. The metallic layer includes a grating and a continuous portion. The grating structure comprises a plurality of lines arranged adjacent to each other such that light emitted from light emitting structure passes through a spacing between adjacent lines of the grating structure towards the mirror structure. The plurality of lines also act as one electrical contact to the light emitting structure.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
46.
OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE
The invention concerns an optoelectronic device comprising a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type and an active region between the first and second layer. The first layer comprises a buried contact layer arranged between the active region and a light emitting surface of the semiconductor layer stack. The semiconductor layer stack comprises: a bottom surface opposite the light emitting surface; first side wall portions extending from the bottom surface into the direction of the light emitting surface until a level between the active region and the buried contact layer; second side wall portions extending from a level between the active region and the buried contact layer until the buried contact layer; and third side wall portions different from the first and second side wall portions extending from the buried contact layer into the direction of the light emitting surface. The optoelectronic device further comprises a material layer covering at least portions of the first side wall portions, a first contact element covering at least portions of the material layer and the second side wall portions electrically contacting the buried contact layer, and a second contact element electrically contacting the bottom surface.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
A photo-polymerization system (10) comprises a vat (120) for housing a photo-curable polymer (122), an array (103) of pixels (102), comprising a plurality of pixels (102), wherein each of the pixels (102) comprises an LED (106). The array (103) is arranged so as to be facing the vat (120). The photo- polymerization system (10) further comprises an array (105) of optical elements (104) comprising a plurality of optical elements (104). Each of the pixels (102) is assigned to a corresponding one of the optical elements (104), respectively. The array (105) of optical elements is arranged between the array (103) of pixels and the vat (120).
B29C 64/129 - Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask
B29C 64/277 - Arrangements for irradiation using multiple radiation means, e.g. micromirrors or multiple light-emitting diodes [LED]
The present disclosure relates to a beam steering system (200) including: a first mirror arrangement (202) comprising a plurality of first mirrors (206) on a first rotatable support structure (212); a second mirror arrangement (204) comprising a plurality of second mirrors (208) on a second rotatable support structure (214), wherein a first mirror (206) directs an input light beam (218) towards the second mirror arrangement (204), and a second mirror (208) directs the input light beam (218) towards a field of view (210) as output light beam (220); and a control circuit (230) configured to: control a first rotational movement of the first rotatable support structure (212) at a first rotational speed, and a second rotational movement of the second rotatable support structure (214) at a second rotational speed, such that the output light beam (220) remains at fixed spatial coordinates in the field of view (210) until the first rotational movement causes another first mirror (206) to direct the input light beam (218) towards the second mirror arrangement (204).
The invention relates to a laser component comprising: an edge-emitting semiconductor laser chip having an active zone and having a laser facet adjoining the active zone; and an optical element which is arranged downstream of the laser facet in the emission direction of the edge-emitting semiconductor laser chip. A front face of the edge-emitting semiconductor laser chip and the optical element are interconnected by means of a welded joint which is free of filler materials, and the laser facet is set back in relation to the front face.
The invention concerns a method for processing an optoelectronic device, wherein a sacrificial layer is deposited covering the sidewalls of a mesa etched semiconductor layer stack. The sacrificial layer may comprise an organic material and is subsequently planarized and recessed are formed therein. A bond layer is deposited into the recess, the bond layer in particular comprising one of an organic material, a nitride-based material, a solder material and a gold alloy. A temporary carrier is attached to the bond layer and the growth substrate removed, thereby exposing portions of the sacrificial layer and the semiconductor layer stack.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
52.
METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT
Proposed is a method for producing an optoelectronic semiconductor component (10), comprising: applying (S100) a passivation layer (100) over a surface (101) of a semiconductor layer stack (112) that comprises a first semiconductor layer (110) of a first conductivity type, an active zone (115) and a second semiconductor layer (120) of a second conductivity type, such that the passivation layer (100) is arranged adjacent to the first semiconductor layer (110). The method furthermore comprises: structuring (S110) the passivation layer (100), whereby openings (102) are formed in the passivation layer (100), which extend to the first semiconductor layer (110); applying (S120) a metallisation layer (105) over the passivation layer (100), the metallisation layer (105) being in contact with the first semiconductor layer (110) in the region of the openings (102); and structuring (S130) the metallisation layer (105) by ion beam etching, whereby first contact elements (107) are formed in contact with the first semiconductor layer (110).
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A collimating metalens (15) comprises a transparent substrate (100) having a first main surface (101) and a second main surface (102). The first and the second main surfaces (101, 102) are parallel to a first direction and a second direction, the first direction being perpendicular to the second direction. The collimating metalens (15) further comprises a first metasurface (108) formed on the first main surface (101), the first metasurface (108) comprising a first region (111). The collimating metalens (15) further comprises a second metasurface (109) formed on the second main surface (102), the second metasurface (109) comprising a second region (112). The first region (111) acts as a cylindrical concave lens, and the second region (112) acts as a convex lens.
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A tunable optical element (10) is configured to modify electromagnetic radiation (15). The tunable optical element (10) comprises a carrier (100), a first electrode (101), and pillars (116) or ridges (117) of a first material (105). A pitch d of the pillars (116) or ridges (117) is smaller than a wave-length of the electromagnetic radiation (15). The pillars (116) or ridges (117) are arranged over the first electrode. The tunable optical element (10) further comprises a planarization layer (107) filling spaces between adjacent pillars (116) or ridges (117). The planarization layer comprises a second material. One of the first and the second materials comprises an electrooptical material and the other of the first and second materials comprises an inert material. The tunable optical element further comprises a transparent second electrode (102) over the planarization layer (105) and a power source (109), connected to the first and second electrode (101, 102), for tuning properties of the optical element (10).
G02F 1/03 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect
G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the position or the direction of light beams, i.e. deflection
G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics
The invention relates to a method for operating a radiation-emitting semiconductor chip, comprising the following steps: - switching on a first number of pixels (6) in a first illumination mode according to a first illumination pattern (11), - switching on at least one pixel (6) according to a measurement pattern (13) during a measurement interval, - determining a temperature (T) of an active zone (14) of at least one of the switched-on pixels (6) during the measurement interval, - switching on a second number of pixels (6) in a second illumination mode according to a second illumination pattern (12). The invention also relates to an illumination device.
H05B 45/14 - Controlling the intensity of the light using electrical feedback from LEDs or from LED modules
H05B 45/18 - Controlling the intensity of the light using temperature feedback
H05B 45/56 - Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDsCircuit arrangements for operating light-emitting diodes [LED] responsive to LED lifeProtective circuits involving measures to prevent abnormal temperature of the LEDs
The present disclosure relates to an imaging device (200) including: an image sensor (210) including an array (212) of sensor pixels (214), wherein the array (212) of sensor pixels (214) has a first lateral dimension in a first direction (252) and a second lateral dimension in a second direction (254) orthogonal to the first direction (252), wherein the first lateral dimension is greater than the second lateral dimension; and imaging optics (220) configured to collect light and project the collected light onto the array (212) of sensor pixels (214), wherein the imaging optics (220) is configured to project the collected light onto the array (212) of sensor pixels (214) with a first magnification in the first direction (252) and with a second magnification in the second direction (254), wherein the first magnification is greater than the second magnification.
H04N 23/45 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
H04N 23/54 - Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
H04N 23/55 - Optical parts specially adapted for electronic image sensorsMounting thereof
H04N 23/69 - Control of means for changing angle of the field of view, e.g. optical zoom objectives or electronic zooming
H04N 23/90 - Arrangement of cameras or camera modules, e.g. multiple cameras in TV studios or sports stadiums
H04N 23/80 - Camera processing pipelinesComponents thereof
A method for producing an optoelectronic component comprises providing a wafer (100) with a plurality of epi structures (210) arranged on a top side of the wafer (100), wherein the epi structures (210) are separated by clearances (220), providing a sheet (300) of wavelength converting material, arranging the sheet (300) above the epi structures (210), forming a mask (400) on top of the sheet (300), wherein the mask (400) comprises openings (420) arranged above the clearances (220), removing parts of the sheet (300) arranged above the clearances (220), and removing the mask (400).
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A method for producing an electronic device comprises steps for providing a ceramic substrate having a top side, arranging an adhesion promotion layer on the top side, providing a cover, and bonding the cover to the adhesion promotion layer with a glass solder.
The invention relates to a surface emitter, having: a first dielectric mirror structure, a second dielectric mirror structure, and a light-emitting structure which is arranged vertically between the first dielectric mirror structure and the second dielectric mirror structure, wherein the light-emitting structure is designed to emit light. The first dielectric mirror structure and the second dielectric mirror structure are designed to reflect the light emitted by the light-emitting structure. The light-emitting structure has at least one epitaxially grown layer or is formed thereof. At least one of the first dielectric mirror structure and the second dielectric mirror structure is free of epitaxially grown layers.
An arrangement is provided, comprising a light-emitting component, a light-receiving component comprising a light- receiving part, and an actuator, wherein the actuator is configured for an alignment of the light-emitting component and the light-receiving part of the light-receiving component. Further, an aligning method for aligning an arrangement is provided.
In at least one embodiment, the semiconductor light source (1) comprises a plurality of light sections (2) and a control unit (3), wherein - each of the light sections (2) comprises a plurality of optoelectronic semiconductor chips (21) for generating light, such as µLEDs, - the light sections (2) are operated in the same way, and - the control unit (3) comprises a comparison module (31) which is configured to detect at least one electric parameter (P) of each of the light sections (2) and to use numerical values for the individual light sections (2) of the detected at least one electric parameter (P) for a fault analysis.
H05B 45/52 - Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDsCircuit arrangements for operating light-emitting diodes [LED] responsive to LED lifeProtective circuits in a parallel array of LEDs
H05B 45/54 - Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDsCircuit arrangements for operating light-emitting diodes [LED] responsive to LED lifeProtective circuits in a series array of LEDs
H05B 45/58 - Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDsCircuit arrangements for operating light-emitting diodes [LED] responsive to LED lifeProtective circuits involving end of life detection of LEDs
63.
PRINTING DEVICE, PRINTING METHOD AND METHOD FOR PRODUCING A PRINTING DEVICE
The invention relates to a printing device comprising a carrier having a printing side. A plurality of cavities are formed on the printing side. In addition, an electrically conductive heating layer is arranged on the printing side. The heating layer comprises a wall section in the region of each cavity, which is arranged on a wall of the respective cavity. An electrical voltage can be applied to the heating layer, which causes a current to flow through the wall sections.
There is provided a film, comprising: a layer of packed semiconductor nanocrystals, and a matrix material comprising at least one metal oxide, wherein the matrix material encapsulates the semiconductor nanocrystals. Further provided are a method for producing a film, and an optoelectronic device.
A housing (1) for an electric device (100) comprises a mold body (2) comprising a first mold material (21) in a second mold material (22). The housing (1) further comprises a base layer (3) formed with at least one metal lead frame part (4) and the first mold material (21), and comprises an assembly surface (10) for the electric device (100). The housing (1) further comprises at least one recess (5), in which the assembly surface (10) is accessible. The base layer (3) comprises through holes (30), wherein the second mold material (21) is arranged in the through holes (30). Sidewalls (50) of the recess (21) are formed with the second mold material (22) and outer side surfaces (11) of the housing (1) transverse to the assembly surface (10) are free of the metal lead frame part (4). For example, the electric device (100) is an optoelectronic semiconductor device comprising at least one micro-LED.
Disclosed herein are systems, devices, and methods for optical voltage transformers that may have improved heat dissipation and efficiency. The optical voltage transformer may include a photovoltaic device that includes a photovoltaic layer on a semi-insulating substrate (535), wherein the photovoltaic layer comprises an array of photovoltaic cells. The semi-insulating substrate (535)may include non-conducting regions (551-554), disposed between each individual photovoltaic cell of the array of photovoltaic cells. The non-conducting regions may be voids/and or ion-implantation regions that reduce/ inhibit free charge carrier mobility through the non-conduction region and between photovoltaic cells.
H01L 31/0475 - PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
67.
METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP
A method for producing an optoelectronic semiconductor chip (100) is specified herein, comprising the steps of: - epitaxially growing a semiconductor layer sequence (1) with an active layer (2) for emitting electromagnetic radiation, wherein the active layer (2) comprises a phosphide compound semiconductor material or an arsenide compound semiconductor material, - forming a via (3) in the semiconductor layer sequence (1) for electrically contacting the semiconductor layer sequence (1), - forming an electron and hole barrier (4) within the semiconductor layer sequence (1) at an edge (31) of the via (3). Further, an optoelectronic semiconductor chip is specified herein.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
Proposed is a method for producing a multiplicity of radiation-emitting semiconductor chips, comprising the following steps: - providing a semiconductor chip assembly (1) having an epitaxial semiconductor layer sequence (2) that has been grown epitaxially on a growth substrate (4), wherein the semiconductor chip assembly (1) has a multiplicity of chip regions (5) and wherein at least one structure trench (6) is arranged between two chip regions (5), - forming at least one further trench (7) between two chip regions (5), - forming a score (10) into the semiconductor chip assembly (1), which score at least partially overlaps the further trench (7) as seen in plan view, - separating the semiconductor chip assembly (1) along the score (10) to form a multiplicity of radiation-emitting semiconductor chips, wherein each radiation-emitting semiconductor chip comprises one chip region (5). A semiconductor chip assembly (1) is also specified.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
69.
LASER PACKAGE, LASER DEVICE AND METHOD FOR THE PRODUCTION THEREOF
The invention relates to a laser package comprising: a base element, which has an arrangement surface on which at least one semiconductor laser element is arranged; a cover element, which is transparent to the laser light emitted from the at least one semiconductor laser element, is connected to the base element, forms a frame that surrounds the at least one semiconductor laser element in a lateral direction, and encapsulates the at least one semiconductor laser element with the base element; an optical element, which is located on the cover element; and at least one deflection element, which is located in the beam path of the at least one semiconductor laser element and is designed to deflect a laser light emitted from the at least one semiconductor laser element in the direction of the at least one optical element. The optical element is fastened to the cover element by means of a connecting material, wherein the connecting material comprises a proportion of at least 30% of silicon and a light-hardening component. In addition, the connecting material is light-activatable and can be hardened at least in part by means of light hardening.
An optical voltage transformer (OVT) includes a light-emitting device (100b) including an array of light-emitters (140) arranged as a plurality of groups of light-emitters (145), each light-emitter group (145) being individually addressable. The OVT further includes a photovoltaic device (200b) configured to convert received light into electrical power and including an array of photovoltaic cells (240) configured to face the array of light-emitters (100b). The array of photovoltaic cells (200b) is arranged as a plurality groups (245) of photovoltaic cells (240), each group comprising a plurality of photovoltaic cells (240) electrically connected in series. The array of photovoltaic cells (200b) has a one-to-one correspondence with the array of light-emitters (100b) so that each photovoltaic cell (240) is configured to receive light emitted from a corresponding light-emitter (140).
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H02M 3/00 - Conversion of DC power input into DC power output
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
71.
OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE
The invention relates to an optoelectronic device (1) which is designed to emit radiation (S), comprising: - a first connection support (2) with an installation surface (2A) on which a first semiconductor chip (5) and a second semiconductor chip (6) are arranged next to each other, - a second connection support (3) with an installation surface (3A) on which a third semiconductor chip (7) is arranged, wherein the installation surfaces (2A, 3A) of the first connection support (2) and the second connection support (3) face each other, and each of the semiconductor chips (5, 6, 7) has an emitter region (50, 60, 70) which is arranged on a main surface (5A, 6A, 7A) and which is designed to emit a radiation component (S1, S2, S3) at a radiation outlet surface (5B, 6B, 7B) arranged transversely to the main surface (5A, 6A, 7A), and - a housing frame (4) with a cavity (40) in which the first, second, and third semiconductor chip (5, 6, 7) are arranged. The main surface (7A) of the third semiconductor chip (7) vertically adjoins the main surface (5A, 6A) of the first and/or second semiconductor chip (5, 6) and overlaps laterally with the main surface (5A, 6A) of the first and/or second semiconductor chip (5A, 6A). The invention additionally relates to a method for producing the optoelectronic device (1).
A lighting device has a light source assembly of semiconductor light sources arranged laterally next to one another and a reflector assembly of retroreflectors arranged laterally next to one another. The light source assembly and the reflector assembly form a common lighting region of the lighting device in which an emission of light by means of the light source assembly and a light reflection by means of the reflector assembly can be produced. The semiconductor light sources are not covered by the retroreflectors.
B60Q 1/30 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating rear of vehicle, e.g. by means of reflecting surfaces
8-2x-ax+ca1-c4-z-bzb4-z+b-c8+z-b+c8+z-b+c]:E, wherein 0≤x≤4, 0≤c≤1, 0≤z≤4, 0≤a≤8, 0≤b≤4, 0≤2x+a≤8, 0≤z+b≤4, - 4≤-z+b-c≤4. The invention also relates to a process for producing a luminophore, to the use of a luminophore, and to an optoelectronic component.
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
75.
OPTICAL MICROPHONE AND METHOD OF FABRICATING AN OPTICAL MICROPHONE
An optical microphone (1) comprises a carrier (10) and a cap (20) attached to the carrier (10), such that a cavity (25) is formed. An ASIC die (30) is arranged on the carrier (10) inside the cavity (25), the ASIC die (30) comprises a photodetector (32). An emitter die (40) is arranged on the ASIC die (30) and comprising a VCSEL (45) configured to emit beams of electromagnetic radiation at a bottom side (42) of the emitter die (40) facing the photodetector (32) and at an opposite top side (44) of the emitter die (40). A MEMS die (50) inside the cavity (25) is spaced from the emitter die (40) in a lateral direction (x), the MEMS die (50) comprises a membrane (52) with a reflective portion (54), wherein the MEMS die (50) is arranged on the carrier (10) and the membrane (52) is in contact with an environment through an opening (12) in the carrier (10), or wherein the MEMS die (50) is attached to the cap (20) and the membrane (52) is in contact with the environment through an opening (12) in the cap (20). An optical system (60) inside the cavity (25) is configured to direct an emitted beam from the top side (44) of the emitter die (40) onto the reflective portion (54) of the membrane (52) and to direct a reflected beam from the membrane (52) into the VCSEL (45), and an evaluation circuit (34) is electrically coupled to the photodetector (32) and configured to evaluate a beam modulation.
The invention relates to a connection substrate (10) comprising • - a main body (1) which is formed with a plastic material, • - a conductor track (2) which has a bottom surface (2a) facing the main body (1), a top surface (2b) facing away from the main body (1), and a side surface (2c) connecting the bottom surface (2a) and the top surface (2b), wherein • - the conductor track (2) is in direct contact with the main body (1) at the base surface (2a) and the side surface (2c). The connection substrate can be used, for example, in an optoelectronic component which has a micro-LED (3).
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
77.
HYBRID CONTROL OF A VARIABLE BRIGHTNESS OF AN OPTICAL COMPONENT
Disclosed herein are systems, devices, and methods for adjusting the emitted brightness levels of an optical component, such as a light-emitting diode. The system allows for adjusting the drive current of the optical component so as to provide a dynamic range of effective brightness levels emitted from an optical component. A modulation circuit is connected to a supply circuit, where the modulation circuit controls the supply circuit to switch the drive current between two different current levels, wherein one of the two different current levels is at an intermediate current level that is between zero and a maximum drive current that corresponds to a maximum brightness level in the dynamic range of effective brightness levels.
A device control system has a primary node, which has a controller, configured to send a signal to a primary circuitry, the signal including a command and a unique identifier of a first device or a second device; a first node, comprising: one or more first devices, connected to one another in series, each of which having a unique identifier; and first circuitry, configured to receive a signal from the primary node via the omnibus and to send data corresponding to the signal to a first device; the second node, comprising: one or more second devices, connected to one another in series, each of which having a unique identifier; and second circuitry, configured to receive a signal from the primary node via the omnibus, and to send data corresponding to the signal to a second device.
A method of repairing an electronic component (1) comprising electronic semiconductor chips (11) arranged on contact pads (12) connected to conductive paths (2) comprises the following method steps: A conductive paste (14) is arranged next to an area of at least one defective electronic semiconductor chip (12) of the electronic component (1). The conductive paste (14) is structured such that at least one further contact pad (15) connected to at least one conductive path (2) is created. A further electronic semiconductor chip (19) is arranged above the at least one further contact pad (15) and electrically connected to the further contact pad (15).
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
80.
OPTOELECTRONIC COMPONENT AND METHOD OF MANUFACTURING AN OPTOELECTRONIC COMPONENT
A Optoelectronic component is provided. The optoelectronic component comprises an optical waveguide structure with at least one optical waveguide and at least one µ-LED unit with an active area, wherein the active area of the µ-LED unit is integrated monolithically into the at least one optical waveguide, and wherein the active area of the µ-LED unit is at least partially covered by a waveguide material of the at least one optical waveguide. Further a method for manufacturing an optoelectronic component is provided.
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
81.
NANOPARTICLE, METHOD FOR PRODUCING A NANOPARTICLE, RESIN, METHOD FOR PRODUCING A RESIN AND LIGHT-EMITTING DEVICE
A nanoparticle (1) is specified. The nanoparticle (1) comprises a nanocrystal (2) converting electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, and a coating (3) at least partially surrounding the nanocrystal (2), wherein a hetero bifunctional linker is covalently bonded to the coating (3). Furthermore, a method for producing the nanoparticle (1), a resin (5), a method for producing are resin (5), and a light- emitting device (7), in particular comprising a micro-LED, are specified.
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
82.
CONNECTION CARRIER, METHOD FOR PRODUCING A SOLDERED JOINT, AND COMPONENT
The invention describes a connection carrier (1) having a main body (2) with a metallization (3), wherein a solder resist layer (4) is applied to the metallization (3) at least at points, and the solder resist layer (4) has a thickness of at most 5 micrometres. The invention also describes a method for producing a soldered joint (12), and a component, in particular having a micro-LED.
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
83.
METHOD FOR PRODUCING A PLURALITY OF SEMICONDUCTOR LASER CHIPS, SEMICONDUCTOR LASER CHIP, METHOD FOR PRODUCING A LASER COMPONENT AND LASER COMPONENT
The invention relates to a method for producing a plurality of semiconductor laser chips, comprising the following steps: - providing an epitaxial semiconductor layer sequence (2) having an active layer (5), which is configured to generate electromagnetic radiation, on a growth substrate (1), wherein the active layer (5) is arranged between a first semiconductor layer (3) and a second semiconductor layer (4), - generating a photonic layer (9) with a photonic crystal (10) in the first/second semiconductor layer (3, 4), - generating recesses (7) starting from a main face of the epitaxial semiconductor layer sequence (2), wherein the recesses (7) penetrate the active layer (5), - applying a plurality of first contact points (13) in the recesses (7), said contact points electrically contacting the first semiconductor layer (3), and applying a plurality of second contact points (14) over or on the first main face of the epitaxial semiconductor layer sequence (2), said contact points electrically contacting the second semiconductor layer (4). The invention also relates to a semiconductor laser chip, to a method for producing a laser component and to a laser component.
H01S 5/0234 - Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/187 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
H01S 5/02 - Structural details or components not essential to laser action
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
A semiconductor laser chip (1) is specified herein, comprising: - a substrate (2) comprising a waveguide (3), wherein the waveguide (3) forms a part of an optical resonator or of an optical amplifier of the semiconductor laser chip (1), - a laser active material (4) embedded into the substrate (2), and - a light source (5) arranged on or over the substrate (2), wherein - the light source (5) optically pumps the laser active material (4) during operation, such that electromagnetic laser radiation (6) is generated and propagating inside the waveguide (3). Further, a laser arrangement is specified herein.
H01S 3/23 - Arrangement of two or more lasers not provided for in groups , e.g. tandem arrangement of separate active media
H01S 3/094 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
H01S 3/0933 - Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
H01S 3/063 - Waveguide lasers, e.g. laser amplifiers
85.
LASER PACKAGE AND LASER DEVICE COMPRISING LASER PACKAGES
The invention relates to a laser package comprising: a base element having an arrangement surface with at least one semiconductor laser element arranged thereon; a frame element, which comprises a ceramic as main material, which is connected to the base element, and which forms a frame surrounding the at least one semiconductor laser element in a lateral direction, the frame element having a circumferential first step extending from a base surface in a lateral direction and having a connection surface at least partly connected to a part of the arrangement surface, and the frame element having a circumferential second step extending from a cover surface opposite the base surface in a lateral direction; a cover element, which is at least substantially transparent to the laser light emitted by the at least one semiconductor laser element and is arranged on the cover surface; at least one optical element arranged on the cover element or integrated therein; and at least one deflection element arranged in the beam path of the at least one semiconductor laser element and designed to deflect laser light emitted by the at least one semiconductor laser element in the direction of the at least one optical element.
A structure is specified. According to one embodiment, the structure comprises a nanocrystal configured to convert a primary radiation into a secondary radiation and an encapsulation at least partially surrounding the nanocrystal, wherein the encapsulation comprises a humectant. Furthermore, a method for producing a structure, a method for adjusting a water content of a structure, and an optoelectronic device, in particular comprising a micro-LED, are specified.
A method for producing an optoelectronic component comprises steps for providing a carrier having an optoelectronic semiconductor chip arranged on a top side of the carrier, the optoelectronic semiconductor chip having a front side, a rear side and sidewalls, the rear side of the optoelectronic semiconductor chip being oriented toward the top side of the carrier, for arranging a photopatternable first material on the top side of the carrier, the first material being a silicon organic glass, wherein the optoelectronic semiconductor chip is embedded into the first material, and for photopatterning the first material in such a way that a frame that covers the sidewalls of the optoelectronic semiconductor chip remains.
A camera system (1) comprising a plurality of photodetectors (2) and a plurality of optical channels (3) is specified, wherein - the photodetectors (2) are arranged spaced apart from one another in a detection plane (20), - to each one of the plurality of photodetectors (2) one of the optical channels (3) is assigned, - each of the optical channels (3) has a main viewing direction (30), and - the optical channels (3) comprise a plurality of different main viewing directions (30). For example, the camera system (1) is integrated in a display using micro-LEDs as light-emitting pixels.
The present disclosure relates to a light emitting device (100) that comprises an array (105) of light emitting pixels (110), wherein each light emitting pixel (110) is separately controllable to emit light, a determination unit (120) that is configured to determine which of virtual pixels (125) shall emit light in a next time interval and to output for each of the virtual pixels (125) a first control signal that indicates an intended light emission by the respective virtual pixel (125) during the next time interval, and a control unit (130) that is configured to receive the first control signals and to generate based thereon for each light emitting pixel (110) a second control signal for controlling light emission by the respective light emission pixel (110) during the next time interval. Here, a mapping (135) between virtual pixels (125) and light emitting pixels (110) maps each virtual pixel (125) to one or a group of adjacent light emitting pixels (110). The control unit (130) generates the second control signals from the first control signals by applying the mapping to the first control signals.
The invention concerns a test arrangement comprising a carrier substrate with a top surface; a first common contact element and a second common contact element arranged on the top surface distant from each other, wherein the first and the second common contact element each comprise a metal layer on the top surface covered by a conductive transparent layer; at least one vertical optoelectronic component, in particular μLED, arranged on the first common contact element in such a way, that a first contact area of the at least one vertical optoelectronic component connects the first common contact element, wherein the at least one vertical optoelectronic component comprises a second contact area opposite the first contact area; a dielectric material embedding the at least one vertical optoelectronic component, wherein the dielectric material extends adjacent to and/or partially onto the first and/or the second common contact element; a conductive transparent top contact layer that is arranged on the dielectric material covering the at least one vertical optoelectronic component, extending along at last one sidewall of the dielectric material thereby contacting the second common contact element; and a test circuit connected to the first and the second common contact element and configured to provide a test signal to the at least one vertical optoelectronic component.
The invention concerns a system for controlling pest infestation of crops, comprising one or more light sources that are particularly arranged in a grid like pattern, wherein the one or more light source is configured to emit UV radiation in a direction substantially different to a radiation direction for crop growth. A fog generator is configured to produce fog in a first volume covered by the UV radiation emitted by the one or more light sources, where the produced fog comprises a specified density and a specified range of droplet size; said fog scattering UV radiation emitted by the one or more light sources towards the crops. The first volume is distanced from the one or more light sources.
The invention relates to a method for producing an electronic component, having the steps of providing a carrier with an upper face and a semiconductor chip arranged on the upper face, forming a coating body from a photoresist on the upper face of the carrier by means of a molding method in a mold of a molding tool, wherein the semiconductor chip is integrated into the coating body, exposing at least one part of the coating body, and removing a part of the coating body by means of a development process.
The invention relates to a display module comprising a first contact element, which is arranged in a first plane and which has a metal layer and a conductive transparent layer; a plurality of second contact elements which are arranged at a distance from one another and at a distance from the first contact element in the first plane; a plurality of vertical optoelectronic components, in particular µLEDs, which are arranged in such a way that a first contact surface of the vertical optoelectronic components is electrically connected to the first contact element, and a second contact surface, opposite the first contact surface, of the vertical optoelectronic components is electrically connected to one of the plurality of second contact elements; a dielectric first material layer in which the vertical optoelectronic components are embedded and which surrounds the vertical optoelectronic components in a lateral direction, in such a way that at least the first and second contact surfaces are exposed; and an electrically conductive transparent contact layer which is adjacent to the dielectric first material layer and which covers an upper surface of the dielectric first material layer and the first contact surfaces, wherein the contact layer electrically connects the first contact element to the first contact surfaces.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A display with a plurality of pixels (1) is provided, wherein - each pixel (1) has a first set of at least two sub-pixels (2) and a second set of at least two sub-pixels (3), - each sub-pixel (R, G, B) comprises a micro-LED (5) emitting electromagnetic radiation during operation, and - micro optic elements (4) are arranged above the micro-LEDs (5) of the second set of sub-pixels (3), the micro optic elements (4) collimating beam cones (6) of the electromagnetic radiation of the micro-LEDs (5) of the second set of sub-pixels (3). Further a method for operating a display and a method for manufacturing a plurality of micro optic elements, particularly for a display, are provided.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
G02B 13/00 - Optical objectives specially designed for the purposes specified below
95.
OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH HIGH AL-CONTENT ALINP LAYER
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
The invention relates to a LIDAR system (10) comprising a tunable laser source (100) suitable for emitting electromagnetic radiation, namely source radiation (15), which is reflected by an object (105). The LIDAR system (10) also comprises a multi-mode waveguide (112) suitable for receiving radiation (16) reflected by the object (105), and a plurality of single-mode waveguides (1151, 1152, …115n) and a coupling device (118, 132) suitable for supplying each of the modes (161, 162) of the reflected radiation (16) that have been guided through the multi-mode waveguide (112) to one of the single-mode waveguides (1151, 1152, …115n). The LIDAR system also comprises a plurality of detection devices (125) each suitable for detecting a heterodyne signal resulting from the reflected radiation (16) that has been guided through an associated single-mode waveguide (1151, 1152, …115n) heterodyning a partial beam of the source radiation (15).
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G01S 17/34 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
The invention relates to a laser package having a base plate and three laser elements implemented in semiconductor bodies. A transparent housing surrounds the laser elements on the base plate. The laser elements have an emission region arranged off-center in respect of their respective semiconductor bodies and are aligned relative to one another such that the distance between the emission regions is as small as possible. According to the invention, this is achieved, inter alia, by stacking at least two of the laser elements on one another, wherein a thin interposer is arranged therebetween.
The invention relates to a photoactive construction element. According to one embodiment, the photoactive construction element comprises a spatial volume which is delimited by side faces, wherein at least one side face comprises a semipermeable membrane, and photocatalytic particles in the spatial volume, wherein the photocatalytic particles can move freely in the spatial volume. In particular, the photoactive construction element has an internal radiation source which comprises a micro-LED or a micro-LED arrangement. Also disclosed is a photoactive system comprising an external radiation source which in particular comprises a micro-LED or a micro-LED arrangement. Also disclosed are a method for cleaning a medium and a method for separating a component of a medium.
C02F 1/32 - Treatment of water, waste water, or sewage by irradiation with ultraviolet light
B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes
B01J 19/12 - Processes employing the direct application of electric or wave energy, or particle radiationApparatus therefor employing electromagnetic waves
C02F 1/72 - Treatment of water, waste water, or sewage by oxidation
B01J 8/20 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles with liquid as a fluidising medium
99.
FAST-SWITCHING INGAALP OR INGAALAS-BASED µLEDS FOR HIGH-SPEED DATA COMMUNICATION
The invention concerns a µ-LED comprising a semiconductor layer stack having a first layer of a first doping type, a second layer of a second doping type, and an active region arranged between the first and the second layer. The semiconductor layer stack comprises a bottom surface and a top surface as well as mesa structured side surfaces connecting the top and bottom surface and a central region with a lateral dimension which is less than one half of a lateral dimension of the semiconductor layer stack. Further the semiconductor layer stack comprises a material including at least one of phosphide and arsenide and a current path from the first layer to the second layer through the active region is limited to the central region.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
100.
OPTOELECTRONIC COMPONENT AND LIGHTING DEVICE WITH OPTOELECTRONIC COMPONENT
The invention relates to an optoelectronic component having a first pixel element, a second pixel element and an imaging optical system shared by the first and second pixel element, wherein the first pixel element has a first image distance in relation to the imaging optical system, and wherein the second pixel element has a second image distance, which differs from the first image distance, in relation to the imaging optical system. The invention also relates to a lighting device having an optoelectronic component.
F21S 41/663 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources by switching light sources
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
F21S 41/153 - Light emitting diodes [LED] arranged in one or more lines arranged in a matrix
patents
