The invention relates to a semiconductor laser, wherein a radiation guiding element (3) is arranged on a laser diode (2), comprising including a material or consisting of a material that can be applied by means of the laser radiation (5) on the laser diode (2). In addition, a radiation transmission element (8), in particular a radiation outlet window (8a), for a semiconductor laser (1) is provided, wherein one or more optical elements (31) are arranged on a base element (80), comprising including a corresponding material. A laser housing (9) with a radiation outlet window (8a) of this type and a corresponding production method are also provided.
A radiation-emitting device includes a carrier formed to include sapphire and/or AlN. A semiconductor layer sequence is applied onto the carrier. A radiation outcoupling layer is arranged on the side of the carrier facing away from the semiconductor layer sequence, wherein the semiconductor layer sequence includes an active region for generating electromagnetic radiation, and wherein the radiation outcoupling layer has a refractive index for the electromagnetic radiation generated by the active region which is between the refractive index of the carrier and the refractive index of the medium surrounding the component. The radiation outcoupling layer is based on quartz glass. Furthermore, a method for manufacturing an optoelectronic device is disclosed.
An optoelectronic component includes a carrier, at least one optoelectronic semiconductor chip, which is arranged on the carrier, and a housing which comprises a molded body. The housing at least partially surrounds the optoelectronic semiconductor chip. A reflective layer is arranged on at least one side surface of the optoelectronic semiconductor chip, and the carrier includes vias.
In an embodiment a method includes providing a circuit board having a first main side and a second main side as well as metallic electrical contact structures located on the first main side, applying electrical compensation structures to the first main side directly on at least some of the contact structures, the compensation structures projecting beyond the respective one of the contact structures in the direction parallel to the first main side, wherein a distance between adjacent compensation structures assigned to one another is at most 50 μm and is smaller than a distance between adjacent contact structures assigned to one another, and applying at least one optoelectronic semiconductor chip directly to the compensation structures assigned to one another, wherein the contact structures and the assigned at least one semiconductor chip do not overlap when viewed from above on the first main side.
The invention relates to a laser package comprising a laser device configured to emit laser radiation through at least one laser facet on a front side surface of the laser device; an electrically conductive heat sink; and a contact layer between the laser device and the electrically conductive heat sink comprising a nanowire structure formed of an electrically conductive material. The contact layer comprises at least one first region and at least one second region, and the at least one first region has a higher material density of the electrically conductive material than the at least one second region. In addition, the at least one first region is arranged adjacent to the at least one laser facet.
In an embodiment a display unit includes a first contact layer, a second contact layer, a plurality of connection region and a plurality of optoelectronic semiconductor components, wherein the first contact layer has a plurality of row lines at a row spacing from one another, wherein the second contact layer has a plurality of column lines at a column spacing from one another, wherein the first contact layer and the second contact layer are arranged stacked, wherein each of the connection regions electrically conductively connects at least one row line to at least one column line, and wherein the row spacing deviates by less than 50% from the column spacing.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Embodiments provide a method for processing an optoelectronic device, wherein the method includes providing a functional semiconductor layer stack with a conductive layer and hard mask layer located on the conductive layer. Both hard mask and conductive layer are structured, and a protective layer is arranged on sidewalls of the conductive layer. Then two dry etching and a wet etching process are performed to obtain an optoelectronic device. Portions of the hard mask layer on the conductive layer remain on the functional layer stack and form an integral part of the device.
In one embodiment, the optoelectronic semiconductor component comprises:—an optoelectronic semiconductor chip, and—a conversion element configured to convert at least part of a primary radiation emitted by the optoelectronic semiconductor chip during operation into a secondary radiation, wherein—the conversion element comprises a frame and a phosphor body within the frame,—the phosphor body comprises at least one phosphor and the frame contains at least one ceramic, and the frame is in direct contact with the phosphor body in a lateral direction which is oriented parallel to a main radiation side of the optoelectronic semiconductor chip.
The invention relates to an optoelectronic semiconductor laser component. The optoelectronic semiconductor laser component includes an epitaxial semiconductor layer sequence having an active region which is designed to generate first electromagnetic radiation in a first wavelength range. The optoelectronic semiconductor laser component further includes a photonic semiconductor layer which forms a two-dimensional photonic crystal and is designed to form a resonator for the first electromagnetic radiation, and a conversion element which is designed to convert the first electromagnetic radiation into second electromagnetic radiation in a second wavelength range. The emission direction is oriented transversely to the main plane of extent of the epitaxial semiconductor layer sequence. The first electromagnetic radiation exits from the photonic semiconductor layer in the emission direction. The first wavelength range is in the blue or ultraviolet spectral range. The invention also relates to an optoelectronic arrangement.
In an embodiment a micro semiconductor LED structure includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, which is arranged on the first semiconductor layer, an active layer sequence including a first edge layer of the first conductivity type facing the first semiconductor layer and a second edge layer of the second conductivity type facing away from the first semiconductor layer and a third semiconductor layer of the second conductivity type, which is arranged at least on the active layer sequence, wherein the second semiconductor layer has at least one window, which penetrates through the second semiconductor layer from a side of the second semiconductor layer facing away from the first semiconductor layer toward the first semiconductor layer, wherein the first semiconductor layer has a recess in a region of the window, and wherein the active layer sequence is arranged at least in the recess.
The invention relates to an optoelectronic semiconductor component including a semiconductor body having a first region with a first conductivity, a second region with a second conductivity and an active region which is designed to emit coherent electromagnetic radiation. An optical resonator is formed along a resonator axis in the semiconductor body. The semiconductor body has a mounting side and side surfaces running transversely to the mounting side. Side surfaces running parallel to the resonator axis are covered by an electrically insulating passivation. A cooling layer which is designed to dissipate at least part of the power loss created in the semiconductor body during operation is arranged on a side of the passivation facing away from the semiconductor body. The invention also relates to an optoelectronic module.
The invention relates to an optoelectronic semiconductor device comprising a carrier, an optoelectronic semiconductor chip arranged on the carrier and a plurality of columns, wherein the plurality of columns are arranged on a base surface of the carrier opposite to the optoelectronic semiconductor chip, and wherein the plurality of columns cause a thermal heat conduction away from the optoelectronic semiconductor chip and the carrier. The invention further relates to a method for producing an optoelectronic semiconductor device.
In an embodiment a device for transferring at least one semiconductor component from a carrier substrate to a target substrate includes at least one lighting device configured to emit a first light pulse onto the semiconductor component to release it from the carrier substrate and to move it towards the target substrate, the semiconductor component comprising at least one contact surface, which corresponds to at least one contact surface on the target substrate and at least one of the contact surfaces comprising a solder material and to emit a second light pulse after the first light pulse, the second light pulse configured to melt the solder material on the at least one of the contact surfaces before the semiconductor component reaches the target substrate.
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
The invention relates to a laser component including a semiconductor laser chip having a laser facet with an active zone, and an optical element which is mounted after the semiconductor laser chip on the laser facet, wherein the semiconductor laser chip and the optical element are connected to each other by a welding connection that is free from welding additives.
In an embodiment an optoelectronic package includes a carrier substrate having at least two through vias filled with an electrically conductive material, at least one optoelectronic component arranged on the carrier substrate, wherein the at least one optoelectronic component is configured to generate light in an ultraviolet range, and wherein the at least one optoelectronic component has at least two connection regions, each of which is electrically coupled to one of the two electrically conductive vias and a package material surrounding the at least one optoelectronic component, wherein the package material is based on a fluoropolymer and covers side surfaces of the at least one optoelectronic component at least in regions, and wherein a top surface of the at least one optoelectronic component opposite the connection regions remains free of the package material.
H10H 20/855 - Optical field-shaping means, e.g. lenses
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
A mirror for a laser is specified, the mirror including a layer stack having at least a first layer containing a first material and at least a second layer containing a second material, the first material having a first refractive index and the second material having a second refractive index, the first refractive index and the second refractive index differing by at least 0.2, and the reflectivity of the mirror in the event of a first exit medium adjoining the mirror, the first exit medium being translucent at least at points to electromagnetic radiation at a specifiable wavelength, differing by less than 10% from the reflectivity of the mirror in the event of a second exit medium adjoining the mirror. the second exit medium differing from the first exit medium and being translucent at least at points to electromagnetic radiation at the specifiable wavelength, for a wavelength range of at least ±20 nm about the specifiable wavelength. Moreover, a laser and a laser component are specified.
The invention relates to an optoelectronic device including a transmitter designed to emit electromagnetic radiation and to be operated with an input voltage, and a receiver designed to receive the electromagnetic radiation and to provide an output voltage, the transmitter including at least one surface emitter, and the receiver comprising at least one photodiode.
H02J 50/30 - Circuit arrangements or systems for wireless supply or distribution of electric power using light, e.g. lasers
H02J 50/40 - Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices
H10F 55/255 - Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
The invention relates to an optoelectronic lighting device comprising a carrier, at least one light emitting semiconductor element which is arranged on a top surface of the carrier and is configured to emit light with a wavelength smaller than 550 nm, a mold compound which is substantially transparent to the light emitted by the semiconductor element and encapsulates the light emitting semiconductor element on the carrier, a frame which is arranged on the top surface of the carrier and projects beyond the light emitting semiconductor element in a direction perpendicular to the top surface of the carrier, and which delimits the mold compound in at least one spatial direction, and a cover element which is substantially transparent to the light emitted by the semiconductor element and which is arranged floating on the mold compound as seen in an emission direction of the optoelectronic lighting device.
A component including a carrier and exactly two semiconductor chips arranged next to one another on the carrier is specified, the exactly two semiconductor chips are each embodied as a double-emitter having exactly two emitter regions or each being embodied as a triple-emitter having exactly three emitter regions and are thus different from a single-emitter. The emitter regions of the component are assigned to the exactly two semiconductor chips, the exactly two semiconductor chips being laser diodes which each have ridges defining the emitter region. The exactly two semiconductor chips are electrically contacted via the carrier.
A LIDAR sensor device includes a first laser emitter configured to emit pulsed light of a first wavelength and at least one second laser emitter configured to emit pulsed light of at least a second wave-length different from the first wavelength, in the direction of an object located in front of the laser emitters respectively. Furthermore, the sensor device includes a receiving unit including at least one photodetector, as well as a first and at least one second optical bandpass filter, in particular a narrowband optical bandpass filter, wherein the first and the at least one second optical bandpass filter are arranged between the object and the at least one photodetector, and wherein the first bandpass filter is configured to allow substantially light of the first wavelength to pass and the at least one second band-pass filter is configured to allow substantially light of the at least one second wavelength to pass.
The invention relates to a laser package comprising a first laser diode for emitting light of a first wavelength and at least one second laser diode for emitting light of a second wavelength. The laser package also comprises a reflector module which is arranged in the beam path of the first and of the at least one second laser diode and which is configured to shape the light emitted by the laser diodes and to deflect it by at least 90° in the direction of an optical fiber with respect to an emission direction of the first and of the at least one second laser diode. The light guide runs essentially parallel to the emission direction and comprises an incoupling structure which is configured to couple the light deflected by the reflector module in the direction of the light guide into the light guide.
In an embodiment a target carrier for transferring semiconductor components includes a target substrate with at least two contact areas and a shrinkable collecting layer arranged around each of the at least two contact areas and projecting beyond the at least two contact areas, wherein a lateral distance between two opposite edges of the shrinkable collecting layer around each of the at least two contact areas is smaller than a lateral dimension of the at least one contact pad of the semiconductor components, wherein the shrinkable collecting layer around the at least two contact areas is designed such that its structuring is configured to penetrate into the shrinkable collecting layer with a substantially central alignment of the at least one contact pad relative to one of the at least two contact areas.
H10H 29/03 - Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
23.
OPTOELECTRONIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
In an embodiment an optoelectronic semiconductor device includes a semiconductor layer sequence having an active region oriented perpendicular to a growth direction of the semiconductor layer sequence and a passivation regrowth layer oriented at least in part oblique to the active region, wherein the passivation regrowth layer is located directly on the semiconductor layer sequence and runs across a lateral boundary of the active region, wherein the semiconductor layer sequence and the passivation regrowth layer are based on the same semiconductor material system, and wherein the semiconductor material system is InGaAlP or AlInGaAsP.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
An automotive apparatus includes a heatsink; a lighting module coupled to the heat sink, the lighting module comprising one or more light sources, a light source driver for driving the one or more light sources; at least one microlens array comprising a plurality of microlenses comprising a plurality of sections, wherein each microlens array section is configured to project an image using light from the one or more light sources; a collimating assembly arranged between the lighting module and the at least one microlens array comprising: one or more collimators corresponding respectively to the one or more light sources, wherein each of the one or more collimators is aligned in a light path from a corresponding one of the one or more light source and the at least one microlens array.
F21S 45/48 - Passive cooling, e.g. using fins, thermal conductive elements or openings with means for conducting heat from the inside to the outside of the lighting devices, e.g. with fins on the outer surface of the lighting device
F21S 41/153 - Light emitting diodes [LED] arranged in one or more lines arranged in a matrix
An optoelectronic semiconductor element includes a semiconductor chip for generating electromagnetic radiation. The chip includes: a radiation decoupling surface through which first electromagnetic radiation is emitted in a first wavelength range during operation and a conversion layer which is disposed directly on the radiation decoupling surface of the semiconductor chip. The conversion layer completely covers the radiation decoupling surface and has a main surface which is opposite the radiation decoupling surface. The conversion layer includes at least one luminescent substance which is designed to convert at least a portion the of first electromagnetic radiation into second electromagnetic radiation of a second wavelength range, wherein the second wavelength range is different from the first wavelength range. An optical feedback element is disposed directly on the main surface of the conversion layer and is designed to reflect at least a portion of the first and/or the second electromagnetic radiation.
In an embodiment a semiconductor arrangement includes at least one semiconductor component with a functional layer stack. The functional layer stack includes a first layer of a first conductivity type, a second layer of a second conductivity type arranged on the first layer, an active zone located between the first and the second layer and an electrically conductive nanowire layer, wherein the electrically conductive nanowire layer is arranged at least in regions on a side of the second layer facing away from the first layer. The semiconductor arrangement further includes a holding layer with at least one elevation, wherein the at least one semiconductor component is arranged on the at least one elevation such that a cavity is formed between the at least one semiconductor component and the holding layer, and wherein the nanowire layer is at least partially exposed.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
27.
OPTOELECTRONIC COMPONENT, AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT
The invention relates to an optoelectronic component comprising an optoelectronic semiconductor chip having an emission surface which is located on an upper side and is designed to emit light into an emission space. The emission surface is laterally delimited by a cover which has: a first portion that annularly delimits the emission surface; and a second portion. The cover is designed in such a way that light incident on the second portion of the cover from outside the optoelectronic component is predominantly reflected. Light emitted from the emission surface towards the cover is predominantly deflected by the cover in such a way that it is not specularly reflected into the emission space.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
28.
OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT
An optoelectronic component includes a semiconductor chip which during operation emits electromagnetic primary radiation of a first wavelength range, and at least one conversion element. The conversion element is designed to emit electromagnetic secondary radiation of a second wavelength range. The electromagnetic secondary radiation is in the infrared spectral range. The conversion element includes at least one wavelength-converting material and a matrix material. The wavelength-converting material is a rylene dye.
A detector is provided which includes at least the following features:
a substrate; and
at least a first detector element and a second detector element, which are arranged laterally next to one another on a main surface of the substrate, wherein
each of the detector elements includes an active semiconductor layer configured for converting electromagnetic radiation having a wavelength λ into an electrical signal,
each of the detector elements includes a first main surface and a second main surface opposite the first main surface, and
the first main surface and the second main surface are each configured for coupling in and for coupling out electromagnetic radiation of wavelength λ.
A detector is provided which includes at least the following features:
a substrate; and
at least a first detector element and a second detector element, which are arranged laterally next to one another on a main surface of the substrate, wherein
each of the detector elements includes an active semiconductor layer configured for converting electromagnetic radiation having a wavelength λ into an electrical signal,
each of the detector elements includes a first main surface and a second main surface opposite the first main surface, and
the first main surface and the second main surface are each configured for coupling in and for coupling out electromagnetic radiation of wavelength λ.
Furthermore, a lidar module and a method for operating a lidar module are specified.
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G01S 17/32 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
30.
METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT
In an embodiment a method includes introducing a semiconductor chip and a cover body, arranged on an upper side of the semiconductor chip, into a mold, enclosing the semiconductor chip and the cover body in the mold with a molding compound, wherein side faces of the semiconductor chip, side faces of the cover body, and a top face of the cover body, which faces away from the semiconductor chip, are covered by the molding compound, at least partially curing the molding compound in order to form a molded body, removing the mold and thinning the molded body by a jet/beam process, wherein the molded body is removed from the top face of the cover body, and wherein the molded body has a cavity in a region of the projection after removing the mold.
In at least one embodiment, the semiconductor laser includes a semiconductor layer sequence for generating laser radiation and a transparent substrate. The semiconductor layer sequence has a first facet which is designed for emitting the laser radiation, and a second facet opposite the first facet. The substrate has a first lateral surface on the first facet and a second lateral surface on the second facet. The first lateral surface is orientated at least in part obliquely to the first facet and/or the second lateral surface is orientated at least in part obliquely to the second facet.
H01S 5/10 - Construction or shape of the optical resonator
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
32.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
In an embodiment a semiconductor device includes a planar carrier having a main surface on which a semiconductor chip element is mounted, the semiconductor chip element having at least one semiconductor chip, at least one wire connection between the main surface of the carrier and a top surface of the at least one semiconductor chip, a first material completely enclosing the wire connection and comprising a first plastic material and a second material forming a frame and surrounding a cavity, wherein the top surface of the at least one semiconductor chip has a region that is free of the first and second materials and is arranged in the cavity, and wherein the top surface of the at least one semiconductor chip has a region that is free of any material.
A semiconductor chip includes an epitaxial semiconductor layer sequence, a solder layer arranged over a back side face of the epitaxial semiconductor layer sequence, a buffer layer arranged between the back side face of the epitaxial semiconductor layer sequence and the solder layer. The buffer layer includes a porous and/or rough metal.
In an embodiment an optoelectronic array includes a first structured layer with a plurality of first regions, the first structured layer including a semiconductor material of a first doping type, a second structured layer with a plurality of second regions arranged on the first structured layer, the second structured layer including a semiconductor material of a second doping type and a plurality of active regions arranged between respective first and second regions forming optoelectronic elements, wherein first regions along a row of the plurality of rows are connected by first contact bridges, wherein second regions along a column of the plurality of columns are connected by second contact bridges, wherein the first contact bridges comprise a semiconductor material of the first doping type, and wherein the second contact bridges comprise a semiconductor material of the second doping type.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
35.
SEMICONDUCTOR LASER AND METHOD FOR PRODUCING A SEMICONDUCTOR LASER
Disclosed is a semiconductor laser with a vertical emission direction including a first active region and a first photonic crystal, wherein during operation of the semiconductor laser, first radiation emitted in the first active region is partially deflected into the vertical emission direction by means of the first photonic crystal, a second active region and a second photonic crystal, wherein during operation of the semiconductor laser, second radiation emitted in the second active region is partially deflected into the vertical emission direction by means of the second photonic crystal, and a connection region which is arranged in the vertical emission direction between the first active region and the second active region and connects the first active region and the second active region together in an electrically conductive manner. Also disclosed is a method for producing a semiconductor laser.
In an embodiment an optoelectronic semiconductor component includes at least one lamella with a longitudinal axis extending along an imaginary straight line and an electrically conductive main body with a recess, wherein the lamella includes a first semiconductor region of a first conductivity, a second semiconductor region of a second conductivity and an active region arranged between the first and the second semiconductor region, the active region being configured to emit a first electromagnetic radiation, wherein the lamella is arranged at least partially in the recess, and wherein the lamella has a length along the longitudinal axis which, within a manufacturing tolerance, corresponds to half a wavelength or an integer multiple of half the wavelength of the first electromagnetic radiation.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
37.
ENCAPSULATION OF SIDE-EMITTING LASER PACKAGES BY MEANS OF VACUUM INJECTION MOLDING
In an embodiment a light emitting component includes at least one edge-emitting semiconductor element having a laser facet, wherein the edge-emitting semiconductor element is arranged on a carrier and is at least partially surrounded by a cap, which comprises a light emitting surface in a beam direction, wherein the cap is made by a vacuum injection molding process, and wherein the light emitting surface directly adjoins the laser facet of the edge-emitting semiconductor element.
A touch-sensitive arrangement includes a carrier, an electrode layer, at least one light-emitting semiconductor body, and an encapsulation layer. The electrode layer is arranged between the carrier and the encapsulation layer and includes a first number N of detection areas and a second number M of illuminating areas. A detection area of the first number N of detection areas includes a first electrode. An illuminating area of the second number M of illuminating areas includes a first and a second contact connection line. The first contact connection line is coupled to a first terminal of the at least one light-emitting semiconductor body and the second contact connection line is coupled to a second terminal of the at least one light-emitting semiconductor body.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/042 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
39.
OPTOELECTRONIC ELEMENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC ELEMENT
An optoelectronic element includes a carrier, a semiconductor chip with an active layer for generating electromagnetic radiation, and an encapsulation element. The semiconductor chip is arranged on a main surface of the carrier. The encapsulation element is arranged on the main surface of the carrier, such that the optoelectronic element includes an intermediate space between the main surface of the carrier and the encapsulation element. The semiconductor chip is arranged in the intermediate space. The intermediate space is at least partially filled with hollow beads.
A surface emitting semiconductor laser is disclosed that includes a semiconductor layer sequence having an active layer for generating laser radiation, a carrier substrate on one side of the semiconductor layer sequence, and an optical structure for influencing at least one degree of freedom of the laser radiation. The carrier substrate is different from a growth substrate of the semiconductor layer sequence and the growth substrate is at least partly removed. The optical structure has a varying refractive index in a lateral direction for the laser radiation.
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
41.
DISINFECTION DEVICE, ARRANGEMENT AND OPERATION METHOD
In at least one embodiment, the disinfection device comprises: —a housing body, —a semiconductor chip located in the housing body and configured to emit ultraviolet C radiation (UVC), and—a security sensor located in the housing body, wherein—the housing body forms a radiation shield preventing the ultraviolet C radiation (UVC) from leaving the disinfection device, —the housing body comprises an opening configured for actuating a button by a user, to actuate the button the user has to grasp into the opening, —the semiconductor chip is configured to irradiate at least part of the opening and/or the button, and—the disinfection device is configured as an attachment device to be disposed over the button.
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
42.
LUMINOPHORE, LUMINOPHORE MIXTURE, METHOD FOR PRODUCING A LUMINOPHORE AND RADIATION-EMITTING COMPONENT
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
43.
SOLDER BONDING ON AuSn BASIS WITH LOW BONDING TEMPERATURE
The present invention relates to an electronic component comprising: a substrate, an optoelectronic component, a first intermetallic layer consisting of tin and nickel, a second intermetallic layer comprising tin and titanium, a third intermetallic layer comprising tin and gold, whereby the amount of tin and gold in the third intermetallic layer is approximately the same. The invention also relates to a method of manufacturing an electronic component and the use of an electronic component.
In embodiments a method includes providing a functional semiconductor layer stack and depositing a first material on the surface, in particular a transition element oxide. A structured hard mask stack is deposited on the first material, wherein the structured hard mask stack includes a first layer and at least a second layer on the first layer with sidewalls of at least the first layer covered by a second material, wherein the second layer and the second material are resilient against a wet chemical etching process. Two anisotropic dry chemical etching processes and a wet etching process is performed to provide a deep mesa structure in the functional layer stack, wherein the second layer protects the first layer during the wet etching process.
A method for determining a substance concentration in a particle-containing liquid, in particular of glucose in blood, wherein a refractive index of the liquid is dependent on a concentration of the substance dissolved therein, includes emitting a measuring light beam of at least one wavelength onto a sample containing the liquid. The method also includes detecting a first light component scattered by scattering on the particles contained in the liquid at a first angle, which corresponds in particular to a forward scattering of the light component. The method further includes detecting a second light component scattered at a second angle by the particles contained in the liquid. The method additionally includes determining a concentration or a proportion of the substance in the liquid from the detected first and second light components, in particular by forming a ratio from the detected first and second light components.
A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
A laser diode component is described including: a semiconductor layer stack having an active zone for emitting laser radiation, a photonic crystal structure having a plurality of structured portions, contacts for electrically contacting the laser diode component, one contact having a plurality of contact portions arranged in recesses of the semiconductor layer stack (2), wherein the contact portions penetrate the active zone.
A semiconductor chip comprising a semiconductor layer sequence with an active region. The active region is configured to generate radiation. The semiconductor chip further includes a filter layer sequence wherein at least one first layer of the filter layer sequence comprises amorphous silicon. Further, a method of producing a plurality of semiconductor chips is disclosed.
The invention relates to a laser diode component including a first semiconductor layer stack which has a first active zone for emitting a first laser radiation, a second semiconductor layer stack which has a second active zone for emitting a second laser radiation, the first and second semiconductor layer stacks following one another in a main emission direction, a resonator which has a first reflective layer and a second reflective layer, and an electrically conductive connecting region which is arranged between the first and second semiconductor layer stacks and has a first connecting layer and a second connecting layer, wherein the first connecting layer is applied to the first semiconductor layer stack, and the second connecting layer is applied to the second semiconductor layer stack. The invention also relates to a method for producing at least one laser diode component.
The invention relates to an optoelectronic semiconductor component having a frame body, which is radiolucent at least in regions, and at least one first semiconductor chip which is designed to emit a first electromagnetic radiation. The frame body has a recess. At least a first waveguide is formed in the frame body. A first coupling surface of the first waveguide is formed on a side surface of the recess facing the first semiconductor chip. A decoupling surface is formed on an outer surface of the frame body. The first semiconductor chip is arranged in the recess in such a way that at least a part of the first electromagnetic radiation enters into the first waveguide. The invention also relates to method for producing a plurality of optoelectronic semiconductor components.
The invention relates to a distance sensor for detecting an object in a detection range of the distance sensor. The distance sensor comprises a sensor housing with a plurality of connection areas, a light emitter unit for generating light of at least a first wavelength, at least one first detector for receiving a light intensity, which is arranged at a first distance from the emitter, and at least one second detector for receiving a light intensity, which is arranged at a second distance from the emitter. In addition, an evaluation circuit is provided, which is connected to the first and second detectors and is configured to determine a distance to an object positioned in the detection range of the distance sensor from signals corresponding to the detected light intensities and the first and second distance.
A luminous film includes a carrier on or in which at least one unit cell of light-emitting diodes is arranged. Each unit cell includes a first, a second and a third light-emitting diode. The first and second light-emitting diodes of a unit cell are connected anti-parallel to each other. The third light-emitting diode is connected in series with the parallel connection of the first and second light-emitting diode of the unit cell.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
The invention relates to a surface-emitting photonic crystal laser (1). The laser has an active layer for generating electromagnetic radiation by combining charge carriers, wherein the active layer has a first main surface and a second main surface lying opposite the first main surface. The first main surface is equipped with a first waveguide layer, and the second main surface is equipped with a second waveguide layer, said waveguide layers having regions which are arranged periodically relative to one another and additional regions which have different refractive indices and which form a photonic crystal. The first waveguide layer is equipped with a first casing layer which has at least one p-connection region for injecting electrically positive charge carriers into the active layer and at least one n-connection region for injecting electrically negative charge carriers into the active layer. The invention additionally relates to a method for producing a surface-emitting photonic crystal laser and to an optoelectronic system.
In an embodiment an optoelectronic arrangement includes at least one vertical optoelectronic device with a first side and a second side, wherein at least parts of the second side form a main emission surface, and wherein the optoelectronic device is configured to emit light of a first wavelength from the main emission surface, an electrically conductive barrier structure at least partially surrounding the at least one vertical optoelectronic device and comprising sidewalls with a reflective surface, the reflective surface electrically isolated from sidewalls of the vertical optoelectronic device, a layer stack arranged on and bonded to the main emission surface and comprising a first epitaxially grown converter layer configured to convert the light of the first wavelength to light of a second wavelength and an optional conductive layer arranged on the main emission surface and electrically connecting a second contact with the electrically conductive barrier structure.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
54.
OPTOELECTRONIC COMPONENT, OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING A COMPONENT
In an embodiment an optoelectronic component with an epitaxial layer sequence comprises a functional inner region having a first electrical contact and a second electrical contact opposite the first electrical contact, as well as semiconductor layers arranged between the first electrical contact and the second electrical contact configured to generate light. The semiconductor layers comprise a base area that increases towards the second electrical contact. A dielectric passivation layer is arranged on the side walls of the semiconductor layers. A mirror layer surrounds the passivation layer at a distance thereby forming a gap. The second electrical contact and a plane of the gap surrounding the second electrical contact form a common light-emitting surface.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
The present disclosure provides an optoelectronic component for a LiDAR system including a photonic integrated circuit. The photonic integrated circuit further includes a microresonator which is configured as an external resonator for an optical gain medium and to provide a frequency-modulated optical transmission field. A waveguide is optically coupled to an output side of the microresonator. A coherent in-line balanced detector comprises an electrical output, as well as a first optical connection side which is coupled to the waveguide to receive the transmission field, and a second optical connection side which is configured to receive a frequency-modulated optical reflection field. The coherent in-line balanced detector is further configured to superimpose the transmission field and the reflection field and to provide an electronic combination signal at the electrical output.
G01S 17/48 - Active triangulation systems, i.e. using the transmission and reflection of electromagnetic waves other than radio waves
G01S 17/58 - Velocity or trajectory determination systemsSense-of-movement determination systems
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
56.
FLOW REACTOR SYSTEM AND METHOD FOR DISINFECTING A FLUID
A flow reactor system for disinfecting a fluid includes a measuring system for determining at least one state variable, a first irradiation zone and a second irradiation zone in which the fluid is irradiated with electromagnetic radiation. The flow reactor system also includes a first radiation source in the first irradiation zone and a second radiation source in the second irradiation zone. The first radiation source includes at least one emitter unit having a light-emitting diode which emits light in a visible and/or ultraviolet wavelength range. The second radiation source includes at least one emitter unit having a lamp which emits light in an ultraviolet wavelength range. The flow reactor system additionally includes a control unit configured to control the emission intensity of the first radiation source and/or the second radiation source depending on the at least one state variable determined by the measuring system.
The invention relates to a laser component including a first laser chip with a first emission region, a second laser chip with a second emission region, and a connection carrier with an upper side and an underside, wherein the first laser chip is secured to the upper side of the connection carrier and is electrically connected, the second laser chip is secured to the underside of the connection carrier and is electrically connected, and the connection carrier has a thickness of max. 200 μm.
A radiation-emitting component includes a semiconductor chip which, in operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element on a cover surface of the semiconductor chip comprising the radiation exit surface. The conversion element contains a matrix material and phosphor particles embedded therein which convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. The conversion element has a bearing surface which is equal to or smaller than the cover surface of the semiconductor chip, and the bearing surface is completely in direct contact with the cover surface of the semiconductor chip. A method for producing a radiation-emitting component is further disclosed.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
In at least one embodiment, the method for operating a radiation emitting device, wherein the radiation emitting device is configured to emit radiation into a first part of a room during operation in order to disinfect this first part of the room, comprises a step, in which at least one input signal is provided which is indicative of a change of the irradiation of the room with the radiation from the radiation emitting device. The method further comprises a step in which an output signal for adjusting the operation of the radiation emitting device depending on the input signal is produced.
A lidar system for surroundings detection includes an emitter for radiation emission and a detector for radiation detection. The emitter includes a plurality of separately controllable light sources for emitting light radiation. The lidar system is configured to operate the emitter in such a way that joint radiation operation is performed by a light source group comprising a plurality of light sources. The joint radiation operation of the light source group includes a continuous operating mode in which the light sources of the light source group emit differently modulated light radiations with different modulation frequencies. The detector is realized in the form of a single detector including only one radiation-sensitive detector structure.
In an embodiment a method for producing a package includes providing a carrier layer comprising an electrically conductive material, forming at least one first recess at a first side of the carrier layer, filling the first recess with a first molding compound, depositing a cover layer comprising an electrically conductive material on the first molding compound, forming at least one second recess at a second side of the carrier layer, wherein the second recess extends up to the first molding compound arranged in the first recess, the second side of the carrier layer facing away from the first side, filling the second recess with a second molding compound, forming at least one third recess in the cover layer, wherein the third recess extends up to the first molding compound arranged in the first recess, and filling the third recess with a third molding compound.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
62.
ARRANGEMENT AND METHOD FOR TESTING OPTOELECTRONIC COMPONENTS
In an embodiment a wafer includes a plurality of optoelectronic components and means for testing at least one of the optoelectronic components for at least one parameter, wherein the plurality of optoelectronic components includes at least one light-emitting layer, which is arranged between an insulating layer and a light emission layer, wherein the insulating layer of at least one optoelectronic component comprises a first contact and a second contact arranged on the light emission layer of the at least one optoelectronic component, and wherein the second contact is arranged outside a light emission surface of the at least one optoelectronic component.
An optoelectronic component for a LiDAR module includes a carrier, a laser light source, and a detector element. The laser light source is designed for the generation of coherent electromagnetic radiation of a wavelength L1. The detector element is designed for coherent detection of incoming electromagnetic radiation of the wavelength L1 depending on a local oscillator signal. The laser light source and the detector element are arranged opposite one another on different sides of the carrier such that, during operation, electromagnetic radiation generated from the laser light source is coupled into the detector element via a first main surface through the carrier as the local oscillator signal and is coupled out via a second main surface.
An optoelectronic component includes an optoelectronic semiconductor chip. The optoelectronic component also includes a control element for controlling an electric current and/or an electric voltage of the optoelectronic semiconductor chip. The optoelectronic semiconductor chip and the control element are arranged one above the other and are mechanically and electrically conductively connected to one another. The optoelectronic component further includes a first connection electrode and a second connection electrode for electrically contacting the optoelectronic component from the outside. The optoelectronic semiconductor chip and the control element are each electrically conductively connected to one of the first and second connection electrodes.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
65.
METHOD FOR PRODUCING A MULTIPLICITY OF VERTICALLY EMITTING SEMICONDUCTOR LASER DIODES AND VERTICALLY EMITTING SEMICONDUCTOR LASER DIODE
The invention relates to a method for producing a multiplicity of vertically emitting semiconductor laser diodes, including providing a growth substrate, epitaxially growing an epitaxial semiconductor layer sequence including an active layer for generating electromagnetic radiation and including a sacrificial layer, wherein the sacrificial layer is disposed between the growth substrate and the active layer, forming trenches in the semiconductor layer sequence, resulting in a multiplicity of semiconductor layer stacks being formed and portions of the sacrificial layer being exposed, applying a carrier onto the epitaxial semiconductor layer sequence, and detaching the growth substrate by electrochemically etching the sacrificial layer, wherein an electrochemical etchant has access to the sacrificial layer through a cut-out in the growth substrate and/or through a cavity in the carrier. The invention also relates to a vertically emitting semiconductor laser diode.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/02 - Structural details or components not essential to laser action
66.
OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT
In an embodiment, an optoelectronic component includes a structured region including a semiconductor body having a first semiconductor region and a second semiconductor region, which have different conductivities, a first main surface and a second main surface and at least one first delimiting surface and at least one second delimiting surface delimiting a recess, a protective layer, which is arranged on the at least one first delimiting surface and covers a junction between the first semiconductor region and the second semiconductor region in the recess, wherein the first main surface is not covered by the protective layer and the protective layer does not adjoin any further protective layer on a side facing the junction and on a side facing away from the junction, and wherein the protective layer is retracted from the first delimiting surface and the second delimiting surface or wherein the protective layer has an L-shape in cross-section.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
The invention relates to an optoelectronic component comprising a carrier, an optoelectronic semiconductor chip and a metal cover. The optoelectronic semiconductor chip has a top with a light-emitting surface. The optoelectronic semiconductor chip is disposed on a top of the carrier such that the light-emitting surface faces away from the top of the carrier. The cover is disposed above the top of the carrier and above the optoelectronic semiconductor chip. The cover has an opening, which is disposed above the light-emitting surface. A dam, which surrounds the light-emitting surface, is disposed on the top of the optoelectronic semiconductor chip.
An optoelectronic converter element includes a substrate, which includes a material having a thermal conductivity of greater 25 W/(m*K), openings being formed in the substrate, and a luminophore located in the openings, thereby defining converter regions.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A backlighting unit includes at least one semiconductor chip, a reflector, and an encapsulation body. The semiconductor chip is configured to generate electromagnetic radiation. The encapsulation body has at least one depression. The semiconductor chip is arranged outside the depression and overlaps with the depression in top view of the encapsulation body. The semiconductor chip is a side-emitting semiconductor chip. The reflector has at least one frame-like sub-region, the opening of which is filled by the material of the encapsulation body and encloses the semiconductor chip and the depression of the encapsulation body in lateral directions. The encapsulation body projects beyond the sub-region in the vertical direction. The encapsulation body at least partially or completely covers edge regions of the sub-region in top view.
H01L 33/54 - Encapsulations having a particular shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
An optoelectronic device is specified including emitters, each emitter configured to emit electromagnetic radiation, and an assigned receiver for each emitter, configured to receive at least part of the electromagnetic radiation emitted by the emitter, wherein the emitters are configured to be operated with an input voltage, each receiver is configured to provide at least part of an output voltage, each emitter is physically connected to the assigned receiver.
In an embodiment a method for processing an optoelectronic component includes providing a growth substrate having a first lattice constant, epitaxially depositing a sacrificial layer based on GaN with a dopant concentration higher than 1e18 atoms/cm3 having a second lattice constant different from the first lattice constant, epitaxially depositing a top layer having a lower doping concentration than the sacrificial layer based on GaN having a third lattice constant different from the first lattice constant, wherein a growth of the sacrificial layer and the top layer generates a plurality of dislocations on a surface of the top layer, and electrochemically porosifying the sacrificial layer through the dislocations on the exposed first portions such that the sacrificial layer below the second portions is at least partially porosified and forming a functional layer stack onto the second portions based on an InGaN semiconductor material.
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
An optoelectronic device is specified, said device including a emitter configured to emit electromagnetic radiation having two or more peak wavelengths and to be operated with an input voltage, and a receiver configured to receive the electromagnetic radiation and to provide an output voltage.
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
An optoelectronic light emitting device includes a substantially transparent first base body, a second base body arranged adjacent to the first base body, and an optoelectronic foil having a first region arranged on the first base body and a second region arranged on the second base body. The optoelectronic foil includes a flexible carrier substrate, at least one electrical line and a plurality of selectively controllable optoelectronic semiconductor components which are arranged on the carrier substrate. An at least partially transparent adhesive layer is arranged between the optoelectronic semiconductor components and the first or second base body and connects the optoelectronic foil to the first or second base body.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
74.
DETECTOR ELEMENT AND METHOD FOR OPERATING A LIDAR MODULE
The invention relates to a detector element which has the following features: an epitaxial semiconductor layer sequence including at least two active layers which are designed to absorb electromagnetic radiation with a wavelength L1, wherein the epitaxial semiconductor layer sequence has a first main surface and a second main surface lying opposite the first main surface, each surface being designed to couple in and couple out electromagnetic radiation, and at least three electric connection contacts which are designed to electrically contact the active layers, an electric connection contact being arranged between two active layers. The invention additionally relates to a lidar module and to a method for operating a lidar module.
G01S 17/34 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
A component (20) for data glasses (21) is provided, the component (20) comprising a radiation source (22), which is designed to emit electromagnetic radiation during operation, a multifocal element (23) with at least a first region (24) and at least a second region (25), and an imaging system (26), which is designed to image electromagnetic radiation emitted by the radiation source (22) into a region outside the component (20), wherein the first region (24) comprises an invariable first refractive power and the second region (25) comprises an invariable second refractive power different from the first refractive power, the multifocal element (23) is arranged in the imaging system (26), and the first region (24) and the second region (25) are arranged concentrically to each other. Furthermore, data glasses (21) are disclosed.
The invention relates to an optoelectronic assembly including at least two semiconductor laser components, which are designed to emit electromagnetic radiation, and an optical superpositioning element with at least one radiation inlet surface and a radiation outlet surface. Each semiconductor laser component is paired with a respective optical element, and each semiconductor laser component emits an inlet beam bundle or a plurality of spatially separated inlet beam bundles. All of the inlet beam bundles of a semiconductor laser component pass through the respective paired optical element, wherein a plurality of inlet beam bundles emitted by a semiconductor laser component are fanned out relative to each other after passing through the optical element such that the inlet beam bundles enter the optical superpositioning element at different inlet angles. Inlet beam bundles from different semiconductor laser components exit together at the radiation outlet surface of the optical superpositioning element in a plurality of outlet beam bundles.
The invention relates to an edge-emitting semiconductor laser diode, including the following features: an epitaxial semiconductor layer stack including an active one, in which during operation electromagnetic radiation is generated, wherein the epitaxial semiconductor layer stack has at least one facet which laterally delimits the epitaxial semiconductor layer stack, and the facet has at least one first partial surface and at least one second partial surface which have reflectivities differing from one another for the electromagnetic radiation generated in the active zone. The invention also relates to methods for producing a plurality of edge-emitting semiconductor laser diodes.
H01S 5/10 - Construction or shape of the optical resonator
H01S 5/22 - Structure or shape of the semiconductor body to guide the optical wave having a ridge or a stripe structure
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
78.
OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
The invention relates to an optoelectronic component including an electrically conductive first contact layer located on a carrier substrate, an electrically conductive platform that is located on the first contact layer and is formed integrally therewith, at least one laser diode that is located on the platform and is electrically connected thereto, and an electrically conductive second contact layer which is electrically coupled to the at least one laser diode. The height of the platform is such that the laser facet of the at least one laser diode is at such a vertical distance from the carrier substrate that a light cone emitted by the laser diode through the laser facet does not strike the carrier substrate within a predefined horizontal distance from the laser facet.
In an embodiment an optoelectronic component includes at least one semiconductor body including a first semiconductor region, a second semiconductor region and an active region therebetween, wherein the active region is configured to generate electromagnetic radiation, a cover element laterally surrounding the at least one semiconductor body and having at least one patterned side surface facing away from the at least one semiconductor body, wherein the cover element contains an index-matched material, and a reflection element, which at least partly covers the at least one patterned side surface, wherein the active region is at least partly laterally surrounded by the first semiconductor region.
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
H01L 33/54 - Encapsulations having a particular shape
In an embodiment an optoelectronic component includes at least one semiconductor component configured to emit light of a first wavelength through a surface and a converter layer arranged on the surface of the at least one semiconductor component, the converter layer configured to convert the light of the first wavelength into light of a second wavelength, wherein a portion of the converter layer comprises a wavelength-selective mirror for a range of the first wavelength.
A vital sensor includes at least one pixelated emitter array with first and second pixels. The pixels are configured to emit light of a wavelength range in the direction of a projection surface. The vital sensor also includes an optical element, arranged between the at least one pixelated emitter array and the projection surface, and which is configured to direct light of the first pixel onto a first region of the projection surface and light of the second pixel onto a second region of the projection surface which differs from the first region. The vital sensor further includes a photodetector configured to detect the light emitted by the pixels and reflected on the projection surface. The vital sensor additionally includes an evaluation unit configured to control the first pixel and the at least one second pixel in a pulsed and time-sequential manner to determine a first reference value.
A component comprising a plurality of semiconductor chips and a carrier is disclosed, wherein the carrier has a common metallic carrier layer with a mounting surface on which the semiconductor chips are arranged. The semiconductor chips are thermally but not electrically conductively connected to the common metallic carrier layer. The carrier has a plurality of contact layers, which are arranged next to one another and next to the common carrier layer in lateral directions and are configured for electrically contacting the component and thus for electrically contacting the semiconductor chips. The carrier has an electrically insulating housing material which holds the common metallic carrier layer and the contact layers together, wherein the common metallic carrier layer and the contact layers are adjacent to the housing material and are electrically insulated from one another by the electrically insulating housing material.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
B60Q 1/04 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
The invention relates to an optoelectronic lighting device comprising a carrier, in particular a lead frame, at least one light emitting semiconductor element which is arranged on the carrier and is configured to emit pulsed light in a wavelength range, in particular in the infrared wavelength range, a first mold compound which is substantially transparent for the wavelength range and covers at least one light emitting region of the semiconductor element; and a second mold compound which is substantially transparent for the wavelength range and which is adjacent to the first mold compound when viewed in an emission direction of the semiconductor element. The first mold compound comprising a higher temperature resistance than the second mold compound.
In an embodiment a radiation-emitting semiconductor component includes a radiation-emitting semiconductor chip configured to emit electromagnetic radiation with a first peak wavelength, a conversion element configured to emit electromagnetic radiation with a second peak wavelength and a dielectric layer stack arranged on the radiation-emitting semiconductor chip and the conversion element, wherein a transmittance of the dielectric layer stack for the electromagnetic radiation with the first peak wavelength and for the electromagnetic radiation with the second peak wavelength in a first angular range is greater than a threshold value, and wherein the transmittance of the dielectric layer stack for the electromagnetic radiation with the first peak wavelength and for the electromagnetic radiation with the second peak wavelength in a second angular range is less than the threshold value.
A converter device has a primary coil, a secondary coil and a first semiconductor layer. The primary coil and the secondary coil are each flat, each has at least one winding and each is coaxially arranged. The primary coil is arranged on a bottom face of the first semiconductor layer and the secondary coil is arranged on a top face of the first semi-conductor layer.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
86.
LIGHT-EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR CHIP
The invention relates to a semiconductor light emitting chip including a semiconductor layer sequence having an active layer which is provided and arranged to generate light when in operation and to couple out via a light outcoupling surface, a filter layer deposited on the light outcoupling surface, and a contact structure deposited on the light outcoupling surface in a region free of the filter layer. The invention also relates to a method for producing said light-emitting semiconductor chip.
In an embodiment a method for producing a growth substrate includes providing a polycrystalline substrate having a nitride compound semiconductor material, applying at least one surface layer onto a main surface of the polycrystalline substrate, wherein the at least one surface layer comprises a nitride compound semiconductor material, and wherein the at least one surface layer is configured for epitaxial growth of an epitaxial semiconductor layer sequence, and high-temperature annealing of the polycrystalline substrate with the at least one surface layer applied thereto.
An optoelectronic device is specified having a transmitter which is designed to emit electromagnetic radiation and to be operated at an input voltage, a support for the transmitter, said support having a top surface and a bottom surface, a first receiver which is designed to receive at least part of the electromagnetic radiation and to supply at least part of an output voltage, wherein the transmitter comprises at least one surface emitter, the at least one surface emitter of the transmitter is mounted on the top surface of the support and radiates at least part of the electromagnetic radiation through the support, the first receiver (3) comprises at least one photodiode, and the first receiver is arranged on the bottom surface of the support.
H01L 31/173 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0475 - PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
89.
OPTOELECTRONIC SEMICONDUCTOR LAYER SEQUENCE AND OPTOELECTRONIC SEMICONDUCTOR DEVICE
The invention relates to an optoelectronic semiconductor layer sequence comprising:—an active layer for generating radiation, and—at least one filter layer configured to at least partially absorb the electromagnetic radiation generated by the active layer of wavelengths smaller than a predetermined cutoff wavelength. The invention also relates to an optoelectronic semiconductor device.
In an embodiment an optoelectronic semiconductor chip includes a semiconductor body having an n-doped region, a p-doped region optionally comprising a p-type current distribution layer and an active region arranged between the n-doped region and the p-doped region, a first dielectric layer arranged on the p-doped region, a mirror layer arranged on the first dielectric layer, wherein the first dielectric layer electrically insulates the mirror layer from the p-doped region and the n-doped region, a second dielectric layer arranged on the mirror layer, a metallisation layer arranged on the second dielectric layer, wherein the metallisation layer is electrically isolated from the mirror layer and electrically contacts the p-doped region, and an n-type contact layer deposited on the n-doped region opposite the p-doped region.
In an embodiment an optoelectronic semiconductor device includes a semiconductor layer stack having a first semiconductor layer of a first conductivity type, an active zone, and a second semiconductor layer of a second conductivity type, wherein the optoelectronic semiconductor device is configured to emit generated electromagnetic radiation via a first main surface of the first semiconductor layer, and wherein a lateral width z of the active zone is smaller than a smallest lateral width c of the first and the second semiconductor layers, separating elements arranged adjacent to the semiconductor layer stack, the separating elements vertically extending along the semiconductor layer stack, and portions of a metal layer arranged on a side of the first semiconductor layer facing away from the active zone and arranged at positions of the separating elements.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A method for producing at least one laser chip is specified, the method including the steps of growing a semiconductor layer sequence having an active zone on a substrate, removing part of the substrate, part of the active zone and part of the semiconductor layer sequence by dry-chemical etching, thereby forming at least one side edge extending, at least in places, transversely or perpendicularly to the main plane of extent of the substrate, and removing part of the substrate, part of the active zone and part of the semiconductor layer sequence at the side edge by wet-chemical etching, the active zone being designed to emit laser radiation. A laser chip is additionally specified.
An optoelectronic semiconductor component includes a semiconductor body having a first region of a first conductivity, a second region of a second conductivity and an active region. Further, the semiconductor component includes a first metallic heat sink, a second metallic heat sink and a thin film insulation layer. The first heat sink and the second heat sink are arranged on a mounting side of the semiconductor body. The first heat sink electrically contacts the first region. The thin film insulation layer electrically insulates the first heat sink from the second heat sink. The thin film insulation layer is in direct contact with the first heat sink and the second heat sink.
A method of manufacturing a semiconductor device includes epitaxially growing a sacrificial layer over a GaN substrate, epitaxially growing a first semiconductor layer over the sacrificial layer and forming a first layer over a first main surface of the first semiconductor layer, the first main surface being on a side of the first semiconductor layer remote from the GaN substrate. The method further includes forming a fluid channel or trench extending through the first layer and the first semiconductor layer to the sacrificial layer, etching the sacrificial layer, including introducing an etchant into the fluid channel or trench, to remove the GaN substrate and forming a second dielectric layer over a second main surface of the first semiconductor layer.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
In an embodiment an optoelectronic device includes a lead frame with a first metallic region and at least one second metallic region spaced therefrom, wherein the first metallic region and the at least one second metallic region form a first cavity on a first side of the lead frame, at least one electrical component, which is arranged in the first cavity and molded with a mold compound, and which electrically connects the first metallic region and the at least one second metallic region to one another, and at least one optoelectronic component, wherein the second side is formed by a first outer side of the lead frame and the first side is formed by a side lying within the lead frame, and wherein the first cavity is formed by a cavity, which extends from the first side of the lead frame in a direction of a second outer side of the lead frame opposite the first outer side.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
96.
METHOD FOR PRODUCING AN ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT
In an embodiment a method includes providing a connecting element having a first main surface, applying a first frame-shaped metallization to or over a carrier and applying a first frame-shaped solder reservoir over the first main surface of the connecting element or applying the first frame-shaped metallization over the first main surface of the connecting element and applying the first frame-shaped solder reservoir over or to the carrier, wherein a width of the first frame-shaped solder reservoir is smaller than a width of the first frame-shaped metallization and liquefying a solder of the first frame-shaped solder reservoir so that a first frame-shaped solder layer is formed which mechanically connects the carrier and the connecting element to one another, the first frame-shaped solder layer having a seam which is formed during liquefying the solder of the first frame-shaped solder reservoir and surrounds the first frame-shaped solder layer.
H01L 21/50 - Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups or
H01L 23/08 - ContainersSeals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
H01L 23/10 - ContainersSeals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
In an embodiment a method includes providing a plurality of optoelectronic semiconductor components on a first carrier, providing a second carrier comprising a contact structure with a plurality of periodically arranged contact surfaces on its top surface, accommodating the plurality of optoelectronic semiconductor components by a transfer unit including placing the transfer unit on a top surface of the optoelectronic semiconductor components opposite to the first carrier, lifting the plurality of optoelectronic semiconductor components from the first carrier, placing a first subset of the plurality of optoelectronic semiconductor components on a first subset of the plurality of periodically arranged contact surfaces and fixing the first subset of the plurality of optoelectronic semiconductor components on the first subset of the plurality of periodically arranged contact surfaces.
H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
98.
RADIATION-EMITTING SEMICONDUCTOR BODY, LASER DIODE AND LIGHT-EMITTING DIODE
The invention relates to a radiation-emitting semiconductor body, having a first semiconductor region of a first doping type, which has a first material composition, a second semiconductor region of a second doping type, which has a second material composition, an active region, which is located between the first semiconductor region and the second semiconductor region, and a first intermediate region, which is located between the first semiconductor region and the active region, wherein the active region includes a plurality of quantum well layers and a plurality of barrier layers, which are arranged alternatingly one above the other, the barrier layers have a third material composition, the first intermediate region includes at least one first blocking layer and at least one first intermediate layer, and the first blocking layer has a fourth material composition and the first intermediate layer has a fifth material composition. The invention also relates to a laser diode and to a light-emitting diode.
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
The invention relates to an illumination device having a housing with a light-exit region and an assembly element arranged below the light-exit region. A conversion element is arranged on the assembly element and designed to convert pump light into emission light in a surface region of the conversion element and to emit said emission light via the surface region. Two surface-emitting laser apparatuses for producing the pump light are arranged opposite one another on the assembly region and are arranged laterally offset to the light-exit region and arranged at a distance from the conversion element and at a distance therefrom. A reflector element connected to the housing is arranged above laser apparatuses and designed to reflect the pump light emitted by the laser apparatuses onto the surface region. The assembly element serves the purpose of heat dissipation for the heat produced and, at the same time, substantial thermal decoupling from the conversion element.
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
In an embodiment an optoelectronic semiconductor device includes a carrier comprising a mounting side and an attachment side opposite the mounting side, a plurality of separate, metallic lead frame parts and a potting body mechanically holding together the lead frame parts, and a plurality of optoelectronic semiconductor chips mounted on the mounting side, wherein the lead frame parts project beyond the potting body at the mounting side, wherein at least some of the lead frame parts have a double-layered design so that the lead frame parts together form a support layer on the attachment side and a mounting layer on the mounting side, wherein the support layer is embedded in the potting body and the mounting layer extends at least partially onto the potting body.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
patents
