A system and methods for OCD metrology are provided including setting an interferometry mirror of the system at each of multiple positions z, wherein at each position the mirror reflection is Optical-Path-Difference (OPD) matched with reflection from the at least one reflective surface, and measuring interferometer spectra Imeasured, with the mirror at each of the multiple positions; then fitting the multiple measured interferometer spectra to an equation for Imeasured, to solve for non-z-dependent parameters of the equation, leaving a z-dependent function of the wave number k, having fully coherent and partially coherent terms; and removing the partially coherent terms of the function to derive a fully coherent field for characterizing the OCD structure.
A measurement system for use in optical metrology, the measurement system which includes a control system configured and operable to carry out the following: (i) receive raw measured data generated by a measurement unit that is configured and operable for performing normal-incidence spectral interferometric measurements on a sample and generating the raw measured data indicative of spectral interferometric signals measured on the sample for a number of different optical path differences (OPDs) between sample and reference arms using infrared wavelengths; (ii) extract, from the raw measured data, a portion of spectral interferometric signals describing variation of signal intensity with a change of an optical path difference OPD during interferometric measurements, said portion of the spectral interferometric signals being independent of interferometric signals returned from a bottom portion of the sample in response to said illuminating electromagnetic field; and (iii) directly determine, from the extracted portion of the spectral interferometric signals, both spectral amplitude and phase of reflection of the illuminating electromagnetic field from the top portion of the sample, thereby enabling to determine a measured spectral signature characterizing the top portion of the sample.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method for evaluating a sample, the method includes performing one or more pump probe measurements, wherein a pump probe measurement includes (i) illuminating the sample by a laser pump beam that is modulated by a modulation frequency; (ii) illuminating the sample by a laser probe beam; (iii) detecting radiation resulting from the illumination of the sample; (iv) determining, based on the detected radiation, thermo-reflectance information regarding a sample region located at a depth of the sample; wherein the thermo-reflectance information comprises information about an oscillatory component of a thermal response of the sample measured during the pump probe measurement; and (v) determining a presence of one or more sample abnormalities based on the analysis results.
Systems and methods are provided for measuring properties of a sample such as a semiconductor element by illuminating a polarizing beam splitter (PBS) with spatially separated non-polarized input optical beams such that the PBS polarizes the input optical beams to produce at least two polarized intermediate optical beams having different (e.g., orthogonal) polarization properties. The polarized intermediate optical beams are further directed to illuminate substantially the same area of a sample. Light returned from the illuminated sample area is directed again through the same PBS to form at least two polarized output beams, having different (e.g., orthogonal) polarization properties, where the differently polarized output optical beams are detectable by use of one or more optical detectors. In some embodiments, the sample is simultaneously illuminated by combined intermediate polarized optical beams of different polarization properties and the polarized output optical beams are also simultaneously measured by the optical detector(s).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
5.
OPTICAL CRITICAL DIMENSIONS (OCD) METROLOGY FOR THICK STACKS
A method for evaluating a thick transparent layer, the method includes (i) generating information about relationships between measurements of a spectrometer of an interferometer and optical path difference (OPD) values of the interferometer; wherein the generating of the information comprises illuminating the thick transparent layer by the interferometer: (ii) determining one or more thick transparent layer reflection parameters, based on the information about the relationship; and (iii) determining one or more structural properties of the thick transparent layer based on the one or more thick transparent layer reflection parameters.
A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.
G01L 1/24 - Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis
G01N 21/01 - Arrangements or apparatus for facilitating the optical investigation
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
An optical measurement system that includes a confocal optics that includes an illumination path and a collection path. The illumination path is configured to illuminate, during a measurement iteration, a sample at an illumination angle with illuminating radiation. The collection path is configured to collect, during the measurement iteration, at a collection angle that differs from the illumination angle, from the sample, radiation resulting from the illumination of sample. The confocal optics includes a confocal filter. The Raman detector that is configured to acquire, during the measurement.
The present disclosure provides an optical measurement system comprising optics configured to project a pattern of radiation onto a top of a patterned object having microscopic patterns, a first detection sub-channel configured to receive first radiation comprising reflected radiation from the top of the patterned object, a second detection sub-channel configured to receive second radiation comprising smeared radiation scattered from a below top region of the patterned object, and a processing circuit configured to process signals from the first and second detection sub-channels to provide information regarding the patterned object. The system enables differentiation between top and below top features of the patterned object by analyzing the reflected and smeared radiation separately.
G02B 21/36 - Microscopes arranged for photographic purposes or projection purposes
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
H01L 21/16 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
A control system for use in metrology measurements of patterned structures is presented, which comprises a data processing system comprising: a dimensional metrology geometrical engine providing a geometric model of a predetermined region of interest (RO I) of the structure; an image processing recipe provider generating data indicative of predefined image processing recipe; a synthetic image data generator utilizing said geometrical model and generating image data corresponding to a synthetic HRI image data of said ROI; and an optimization module configured for: processing input correlation data between first and second HRI-related data being, respectively, non-image data indicative of predefined position information associated with measured geometric parameter(s) of the ROI and data indicative of said synthetic HRI image data; and generating an optimized geometric model of the ROI for use in the metrology measurements of the structure, thereby eliminating a need for measured HRI image data of the ROI for model optimization.
G06V 10/25 - Determination of region of interest [ROI] or a volume of interest [VOI]
G06T 5/50 - Image enhancement or restoration using two or more images, e.g. averaging or subtraction
G06T 7/55 - Depth or shape recovery from multiple images
G06T 7/62 - Analysis of geometric attributes of area, perimeter, diameter or volume
G06V 10/22 - Image preprocessing by selection of a specific region containing or referencing a patternLocating or processing of specific regions to guide the detection or recognition
A system and methods for characterizing a semiconductor sample by terahertz (THz) time-domain spectroscopy (TDS), the system configured to implement methods including: directing an optical pump pulse, having one or more optical pump parameters, onto a region of the sample, thereby inducing a transient change within the region; directing a terahertz (THz) probe pulse to the region of the sample at a controlled time delay relative to the optical pump pulse; detecting the THz response signal from the transmission or reflection of the THz probe pulse from the region of the sample; and determining from the THz response signal at least one characteristic of the sample indicated by the transient change induced by the optical pump pulse..
G01N 21/3586 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
11.
MACHINE AND DEEP LEARNING METHODS FOR SPECTRA-BASED METROLOGY AND PROCESS CONTROL
A system and methods for Advance Process Control (APC) in semiconductor manufacturing include: for each of a plurality of waiter sites, receiving a pre-process set of scatterometric training data, measured before implementation of a processing step, receiving a corresponding post-process set of scatterometric training data measured after implementation of the process step, and receiving a set of process control knob training data indicative of process control knob settings applied during implementation of the process step; and generating a machine learning model correlating variations in the pre-process sets of scatterometric training data and the corresponding process control knob training data with the corresponding post-process sets of scatterometric training data, to train the machine learning model to recommend changes to process control knob settings to compensate for variations in the pre-process scatterometric data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G05B 13/02 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
12.
SYSTEM AND METHOD FOR USE IN DEPTH-RESOLVED INSPECTION OF MULTI-LAYER PATTERNED STRUCTURES
N N N of said camera pixels, and obtaining a 3D map of the time-domain impulse responses of the structure for at least a wavelength range of interest from the range used in the broadband interferometer; and layers' alignment data extractor for directly extracting depth-resolved information from said 3D map data.
An integrated metrology system that includes a metrology channel configured to perform optical measurements of metrology sites of a wafer; a pattern recognition imaging channel (PRIC) that is configured to (i) generate, during a metrology session, navigation image information for navigating in relation to the metrology sites, and (ii) acquire PRIC metrology information for wafer edge region portions during at least a portion of a wafer alignment session; a sample movement unit configured to rotate the wafer during a wafer alignment session; and a processing circuit configured to process at least the PRIC metrology information to provide metrology results regarding the wafer edge region portions.
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
G01N 21/01 - Arrangements or apparatus for facilitating the optical investigation
14.
VERTICALLY-RESOLVED METROLOGY WITH ASYMMETRY-SENSITIVE MEASUREMENT
INTERNATIONAL BUSINESS MACHINES CORPORATION (IBM) (USA)
Inventor
Schoeche, Stefan
Schmidt, Daniel
Cheng, Marjorie
Cepler, Aron
Barak, Gilad
Dror, Shaked
Ofek, Jacob
Turovets, Igor
Abstract
A system and methods for OCD metrology are provided including setting an interferometry mirror of the system at each of multiple positions z, and measuring spectra of interferometer signals reflected from lower and higher surfaces while applying a first setting of an asymmetry-sensitive measurement parameter, thereby creating a set of multiple spectra. Subsequently, a function representing a coherent portion of the reflected signals is determined and transformed to a time domain to generate a first signal signature representing the coherent portion of the reflected signal. Subsequently, the process is repeated for a second setting of the asymmetry-sensitive measurement parameter, to generate a second signal signature. A measure of difference between the first and second signal signatures indicates a measure of asymmetry of the structure.
A metrology system that may include (i) thermal response critical dimensions (TRCD) optics that comprises pump beam optics and probe beam optics: wherein during a measurement iteration the pump beam optics are configured to illuminate the structure with a pump beam, and the probe beam optics are configured to illuminate the structure with a probe beam, to collect the response radiation and to sense the response radiation; and (ii) one or more modeling engines that are configured to determine at least one critical dimension of the structure based on the response radiation.
A system for evaluating a sample, the system includes (i) a chopper that includes (i.1) a disc that is made of a transparent material that bears an inner opaque pattern and outer opaque pattern, the outer opaque pattern surrounds the inner opaque pattern, and (i.2) a rotating unit that is configured to rotate the disc during a modulation period, (ii) first optics, (iii) second optics, (iv) a control unit that is configured to detect a second modulated beam from the second optics, and control the rotating unit based on at least one parameter of the second modulated beam.
A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
An optical measurement system, which include an illumination path that is configured to illuminate an illuminated area of a sample; a collection path configured to collect illumination emitted from the illuminated area as a result of the illumination of the illuminated area; a spatial filter that is tunable; a Raman detector; and wherein the spatial filter is positioned upstream to the Raman detector, and is configured to spatially filter the illumination emitted from the illuminated area to provide spatially filtered illumination. The Raman detector is configured to receive the spatially filtered illumination and to generate one or more Raman spectra.
A system and methods for OCD metrology are provided including receiving training data for training an OCD machine learning (ML) model, the training data measured from multiple wafers and including multiple pairs of corresponding input and label datasets obtained from each respective wafer. The input dataset of each pair includes multiple scatterometric datasets, measured at multiple respective locations defined by a first map. The label dataset of each pair includes one or more critical dimension (CD) parameters of respective locations defined by a second map, the second map including at least one location not in the first map. The OCD ML model is then applied to a new set of scatterometric datasets, measured from locations of a new wafer, according to the first map, to generate predicted CD parameters of locations of the second map on the new wafer.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
20.
RAMAN SPECTROSCOPY BASED MEASUREMENTS IN PATTERNED STRUCTURES
A method for use in measuring one or more characteristics of patterned structures, the method including providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the one or more characteristics to be measured, processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme, and analyzing the distribution of Raman-contribution efficiency and determining the one or more characteristics of the structure.
G01L 1/24 - Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis
G01N 21/01 - Arrangements or apparatus for facilitating the optical investigation
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
An optical measurement system, the optical measurement system comprises optics, wherein the optics include a collection path and an illumination path and an objective lens. The optics is configured to acquire Raman spectrums of one or more structural elements located at a measurement site of the sample while being set-up to apply one or more optics parameters that comprise an illumination angle out of a set of multiple illumination angles that correspond to a numerical aperture of the objective lens. Each of the one or more structural elements has a dimension that ranges between one tenth of nanometer to one hundred microns; an optical spectrometer; a Raman detector that is downstream to the optical spectrometer; and a control unit that is configured to determine an expected radiation pattern to be detected by the Raman detector when the optics are set-up to apply the one or more optics parameters.
A control system and method are presented for use in optical measurements on patterned samples. The control system comprises a computer system configured for data communication with a measured data provider and comprising a data processor configured and operable to receive and process raw measured data of first and second types concurrently collected from the patterned sample being measured. said first and second types of the measured data comprising, respectively. scatterometry measured data. characterized by first relatively high signal-to-noise and predetermined first relatively low spatial resolution, and interferometric measured data characterized by second relatively low signal-to-noise and predetermined second relatively high spatial resolution, said data processor being configured to process the measured data to determine pattern parameters along said patterned sample characterized by said first signal to-noise and said second spatial resolution.
G01N 21/956 - Inspecting patterns on the surface of objects
G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated
G01N 21/45 - RefractivityPhase-affecting properties, e.g. optical path length using interferometric methodsRefractivityPhase-affecting properties, e.g. optical path length using Schlieren methods
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
23.
METHOD AND SYSTEM FOR OPTIMIZING OPTICAL INSPECTION OF PATTERNED STRUCTURES
A system for use in metrology of a patterned structure, the system which includes a data input utility configured to receive: first type of data related to the patterned structure, the first type of data was obtained by a first type of metrology system and comprises first type measurements and first geometrical information regarding the patterned structure; second type of data related to the patterned structure, the second type of data was obtained by a second type of metrology system and comprises second type measurement results and second geometrical information regarding the patterned structure; the second type of metrology system differs from the first type of metrology system, and a data processing and analyzing utility configured to determine values of parameters of interest based on the first type of data and the second type of data. The parameters of interest comprise (i) a first parameter of interest that is related to the first type of metrology and (ii) a second parameter of interest that is related to the second type of metrology; in which the first parameter of interest is a parameter of a first model for interpreting the first type of measurements; in which the second parameter of interest is a parameter of a second model for interpreting the second type of measurements; wherein the data processing and analyzing utility is configured to determine values of parameters of interest by applying an iterative process, wherein the iterative process comprises updating the first model based on the second type of data to provide a currently updated first model and updating the second model based on the first type of data. The first type measurements and the second type measurements are taken from measurement sites of a substrate that comprises the patterned structure; wherein the data processing and analyzing utility configured to adjust the first type measurements by using correlation curves to provide adjusted first type measurements, and use the adjusted first type measurements during a data interpretation process applied on the second type of data, in which the data processing and analyzing utility is configured to reduce a number of floating parameters of the data interpretation process to provide a reduced number of floating parameters by stabilizing measurements of non-floating parameters; wherein each of the non-floating parameters has a greater impact on the first type measurements than an impact of each of the reduced number of floating parameters.
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G01B 21/02 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G06T 7/80 - Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
24.
MOTOR THERMAL MANAGEMENT BY FIELD-ORIENTED CONTROL CURRENTS
Apparatus and methods are provided for stabilizing a temperature of a motor of a metrology system, wherein field-oriented control (FOC) components of input currents of the motor are a direct (!
H02P 21/30 - Direct torque control [DTC] or field acceleration method [FAM]
H02P 9/14 - Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field
H02P 9/16 - Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field due to variation of ohmic resistance in field circuit, using resistances switched in or out of circuit step by step
H02P 21/10 - Direct field-oriented controlRotor flux feed-back control
H02P 21/16 - Estimation of constants, e.g. the rotor time constant
H02P 21/22 - Current control, e.g. using a current control loop
25.
DETECTING OUTLIERS AND ANOMALIES FOR OCD METROLOGY MACHINE LEARNING
A system and methods for OCD metrology are provided including receiving training data for training an OCD machine learning (ML) model, including multiple pairs of corresponding sets of scatterometric data and reference parameters. For each of the pairs, one or more corresponding outlier metrics are by calculated and corresponding outlier thresholds are applied whether a given pair is an outlier pair. The OCD ML model is then trained with the training data less the outlier pairs.
G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An interferometry system for evaluating a sample having a region of interest of a given depth, the interferometry system includes a memory configured to store interference pattern measurement results indicative of interference patterns associated with different measurement conditions and with different locations of the sample; the interference pattern measurement results are associated with a coherence length that is smaller than the given depth; and an analysis unit comprising a processing circuit that is configured to: extract, when operating in a first mode, from the interference pattern measurement results, coherent interference data; and determine, when operating in the first mode, one or more attributes of the region of interest based on the coherent interference data.
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G01N 21/45 - RefractivityPhase-affecting properties, e.g. optical path length using interferometric methodsRefractivityPhase-affecting properties, e.g. optical path length using Schlieren methods
A broadband interferometry system that includes (i) an interferometer that includes a tilted reference mirror that is oriented by a tilt angle in relation to a normal to an optical axis of a reference beam thereby introducing a range of optical path differences along a first axis while guaranteeing a formation of an interference pattern on a sensor, (ii) a movement unit for introducing a relative movement between the sample and the interferometer, along a second axis that is oriented to the first axis thereby virtually scanning the range of optical path differences, (iii) a processing circuit for receiving interference detection signals and reconstructing interferograms for different points of illumination on the sample. The measurement beam forms an elongated spot on the sample, having a longitudinal axis that is oriented to the first axis and the second axis.
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G01N 21/45 - RefractivityPhase-affecting properties, e.g. optical path length using interferometric methodsRefractivityPhase-affecting properties, e.g. optical path length using Schlieren methods
There is provided an integrated system that includes (i) an integrated imaging unit (IIU) configured to scan a sample while the sample is located at a first plane of a first height; (ii) an integrated metrology unit (IMU) configured to measure metrology sites of the sample while the sample is located at a second plane of a second height that differs from the first height; and (iii) a sample movement unit configured to move a sample, by following a path, between the first plane to the second plane; wherein the IIU is located between the first plane and the second plane.
A measurement system for use in measuring parameters of a patterned sample, the system including a broadband light source, an optical system configured as an interferometric system, a detection unit, and a control unit, where the interferometric system defines illumination and detection channels having a sample arm and a reference arm having a reference reflector, and is configured for inducing an optical path difference between the sample and reference arms, the detection unit for detecting a combined light beam formed by a light beam reflected from the reflector and a light beam propagating from a sample's support, and generating measured data indicative of spectral interference pattern formed by spectral interference signatures, and the control unit for receiving the measured data and applying a model-based processing to the spectral interference pattern for determining one or more parameters of the pattern in the sample.
A system for perturbations based evaluation of a property of a sample, the system includes (a) a memory unit that is configured to store sub-sets of measurement results that are indicative of changes in reflectivity of the sample in response to perturbations of the sample, wherein the measurement results are generated by a broadband optics that comprises a broadband radiation source, an interferometer and a broadband photodetector, wherein the sub-sets differ from each other by values of a broadband optics parameter applied during a generation of the sub-sets; (b) a time domain to frequency domain conversion circuit that is configured to convert the sub- sets to spectral information regarding the change of reflectivity of the sample; and (c) an estimation circuit that is configured to estimate the property of the sample based on the spectral information..
G01B 9/02003 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using beat frequencies
G01B 9/02017 - Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
G01B 15/04 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
G01B 9/02055 - Reduction or prevention of errorsTestingCalibration
G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
31.
CONFIGURABLE ILLUMINATION SOURCE FOR OPTICAL METROLOGY AND RELATED METHODS
The application pertains to an illumination source for optical metrology. The source includes a matrix that includes twenty-five light emitting diodes (LEDs) arranged in twelve sets associated with twelve peak wavelength ranges. The sets have peak wavelength ranges within the 400 till 1000 nanometer range. Each set of LEDs is controlled independently, and each LED has a controllable intensity. The illumination source also includes a controller configured to selectively activate any combination of LEDs and control the matrix based on a metrology recipe. The claim also includes a method for illuminating a sample using the illumination source.
H05B 45/3574 - Emulating the electrical or functional characteristics of incandescent lamps
G01N 21/25 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
G01N 21/88 - Investigating the presence of flaws, defects or contamination
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A method and system are presented for use in measuring on patterned samples, aimed at determining asymmetry in the pattern. A set of at least first and second measurements on a patterned region of a sample is performed, where each of the measurements comprises: directing illuminating light onto the patterned region along an illumination channel and collecting light reflected from the illuminated region propagating along a collection channel to be detected, such that detected light from the same patterned region has different polarization states which are different from polarization of the illuminating light, and generating a measured data piece indicative of the light detected in the measurement. Thus, at least first and second measured data pieces are generated for the at least first and second measurements on the same patterned region. The at least first and second measured data pieces are analyzed and output data is generated being indicative of a condition of asymmetry in the patterned region.
A system and methods for Advance Process Control (APC) in semiconductor manufacturing include: for each of a plurality of waiter sites, receiving a pre-process set of scatterometric training data, measured before implementation of a processing step, receiving a corresponding post-process set of scatterometric training data measured after implementation of the process step, and receiving a set of process control knob training data indicative of process control knob settings applied during implementation of the process step; and generating a machine learning model correlating variations in the pre-process sets of scatterometric training data and the corresponding process control knob training data with the corresponding post-process sets of scatterometric training data, to train the machine learning model to recommend changes to process control knob settings to compensate for variations in the pre-process scatterometric data.
G05B 13/02 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure.
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A polarized Raman Spectrometric system for defining parameters of a polycrystalline material, the system comprises a polarized Raman Spectrometric apparatus, a computer-controlled sample stage for positioning a sample at different locations, and a computer comprising a processor and an associated memory. The polarized Raman Spectrometric apparatus generates signal(s) from either small sized spots at multiple locations on a sample or from an elongated line-shaped points on the sample, and the processor analyzes the signal(s) to define the parameters of said polycrystalline material.
A method for semiconductor device metrology. The method may include creating a time-domain representation of wavelength-domain measurement data of light reflected by a three dimensional (3D) patterned structure of a semiconductor device; selecting one or more relevant peaks of the time-domain representation and at least one irrelevant portion of the time-domain representation. One or more relevant peaks occur during one or more relevant time periods; and are associated with corresponding relevant reference peaks that are associated with different versions of a reference 3D patterned structure.
A method for operating an integrated evaluation system, the method includes (i) introducing, by a motion system, a relative movement between a sample, and at least one head of a IM head or an IIU head, (ii) performing by the IM head, measurements of a group of measurement sites of the sample; (iii) acquiring, by the IIU head, images of regions of the sample that include the measurement sites; (iv) receiving, by a processing circuit, the measurements of the group and the images of the regions; and (v) using a mapping between the measurements and the pixels of the images that correspond to the measurement sites, to estimate measurement values that are within the regions and outside the measurement sites.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
B65G 49/07 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers
A measurement system for use in optical metrology, the measurement system which includes a control system configured and operable to carry out the following: (i) receive raw measured data generated by a measurement unit that is configured and operable for performing normal-incidence spectral interferometric measurements on a sample and generating the raw measured data indicative of spectral interferometric signals measured on the sample for a number of different optical path differences (OPDs) between sample and reference arms using infrared wavelengths; (ii) extract, from the raw measured data, a portion of spectral interferometric signals describing variation of signal intensity with a change of an optical path difference OPD during interferometric measurements, said portion of the spectral interferometric signals being independent of interferometric signals returned from a bottom portion of the sample in response to said illuminating electromagnetic field; and (iii) directly determine, from the extracted portion of the spectral interferometric signals, both spectral amplitude and phase of reflection of the illuminating electromagnetic field from the top portion of the sample, thereby enabling to determine a measured spectral signature characterizing the top portion of the sample.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
There is provided an optical measurement system that may include a control unit, an optical unit, first and second optical heads (OHs), and first and second movement units. The optical unit is configured to direct, during a first period, an illumination beam towards the second OH. The first movement unit is arranged to move, during the first period, the first OH to a first OH measurement site of a sample while the second OH participates in performing second OH metrology iterations at a second OH measurement site of the sample. The second movement unit is configured to move the second OH, during the second period, to a new second OH measurement site of the sample while the first OH participates in performing first OH metrology iterations. The or more of the first OH metrology iterations differ from each other by the polarization parameter.
A SIMS-based analysis system, that includes (a) a memory circuit that is configured to store (i) an estimated model of a non-planar three dimensional (3D) structural element, and (ii) a measured SIMS spectrum of the 3D structural element; (b) a calibration information circuit that is configured to obtain calibration information, (c) a SIMS simulating circuit that is configured to provide a (i) an updated model of the 3D structural element, the updated model is indicative of changes undergone by the 3D structural element during the sputtering process, and (ii) a simulated SIMS spectrum of the 3D structural element; and (d) a fitting circuit that is configured to determine at least one of geometry and material concentration parameters based on the simulated SIMS spectrum and the measured SIMS spectrum.
H01J 49/26 - Mass spectrometers or separator tubes
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
A method, a system, and a non-transitory computer readable medium for Raman spectroscopy. The method may include determining first acquisition parameters of a Raman spectroscope to provide a first acquisition set-up, the determining is based on at least one expected radiation pattern to be detected by a sensor of the Raman spectroscope as a result of an illumination of a first area of a sample, the first area comprises a first nano-scale structure, wherein at least a part of the at least one expected radiation pattern is indicative of at least one property of interest of the first nano-scale structure of the sample; wherein the first acquisition parameters belong to a group of acquisition parameters; setting the Raman spectroscope according to the first acquisition set-up; and acquiring at least one first Raman spectrum of the first nano-scale structure of the sample, while being set according to the first acquisition set-up
Apparatus and methods are provided for autofocusing of a metrology system, including positioning a measurement site at a working distance separated from the focus distance by a defocus distance; acquiring an including the measurement site; masking the image to calculate a halo area around the measurement site; according to the halo area and a pre-set function relating halo area to defocus distance, estimating a working distance correction; and, responsively, adjusting the working distance by the working distance correction to set a new working distance closer to the focus distance.
A workpiece holding device and method are disclosed. The device comprises (1) a vacuum chuck having a base formed with one or more main vacuum ports, an array of spaced-apart support members, and an annular rim projecting at a perimeter portion of the base, wherein said rim and said array of spaced-apart projecting support members define together a workpiece support surface; and (2) an annular resilient sealing member articulated external to the annular rim defining a confined secondary space between the annular resilient sealing member and the annular rim of the vacuum chuck, wherein the annular sealing member is configurable for sealingly engaging with a peripheral portion of a workpiece placeable over the vacuum chuck, thereby enabling the confined space to operate as a peripheral auxiliary vacuum chamber.
B25B 11/00 - Work holders or positioners not covered by groups , e.g. magnetic work holders, vacuum work holders
B25B 15/06 - Screwdrivers operated by axial movement of the handle
B65G 47/91 - Devices for picking-up and depositing articles or materials incorporating pneumatic, e.g. suction, grippers
B25B 27/14 - Hand tools or bench devices, specially adapted for fitting together or separating parts or objects whether or not involving some deformation, not otherwise provided for for assembling objects other than by press fit or detaching same
Imeasuredmeasured Imeasuredmeasured measured , to solve for non-z-dependent parameters of the equation, leaving a z-dependent function of the wave number k, having fully coherent and partially coherent terms; and removing the partially coherent terms of the function to derive a fully coherent field for characterizing the OCD structure.
G01N 21/956 - Inspecting patterns on the surface of objects
G01B 9/02017 - Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
G01J 9/02 - Measuring optical phase differenceDetermining degree of coherenceMeasuring optical wavelength by interferometric methods
A method, a system, and a non-transitory computer readable medium for accurate Raman spectroscopy. The method may include executing at least one iteration of the steps of: (i) performing, by an optical measurement system, a calibration process that comprises (a) finding a misalignment between a region of interest defined by a spatial filter, and an impinging beam of radiation that is emitted from an illuminated area of a sample, the impinging beam impinges on the spatial filter; and (b) determining a compensating path of propagation of the impinging beam that compensates the misalignment; and (ii) performing a measurement process, while the optical measurement system is configured to provide the compensating path of propagation of the impinging beam, to provide one or more Raman spectra.
A semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting a relevant and irrelevant portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the relevant portion of the time-domain representation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/956 - Inspecting patterns on the surface of objects
A polarized Raman Spectrometric system for defining parameters of a polycrystalline material, said system comprising: a polarized Raman Spectrometric apparatus, a computer-controlled sample stage for positioning a sample at different locations, and a computer comprising a processor and an associated memory.
A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
A method, a system, and a non-transitory computer readable medium for evaluating x-ray signals. The method may include calculating an estimated field for each of multiple non-perturbed objects, the multiple non-perturbed objects represent perturbances of the perturbed object; the perturbances are of an order of a wavelength of the non-diffused x-ray signals; and evaluating the non-diffused x-ray signals based on the field of the multiple non-perturbed objects.
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
50.
SELF-SUPERVISED REPRESENTATION LEARNING FOR INTERPRETATION OF OCD DATA
A system and methods for OCD metrology are provided including receiving multiple first sets of scatterometric data, dividing each set into k sub-vectors, and training, in a self-supervised manner, k2 auto-encoder neural networks that map each of the k sub-vectors to each other. Subsequently multiple respective sets of reference parameters and multiple corresponding second sets of scatterometric data are received and a transfer neural network (NN) is trained. Initial layers include a parallel arrangement of the k2 encoder neural networks. Target output of the transfer NN training is set to the multiple sets of reference parameters and feature input is set to the multiple corresponding second sets of scatterometric data, such that the transfer NN is trained to estimate new wafer pattern parameters from subsequently measured sets of scatterometric data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal.
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
G01N 23/201 - Measuring small-angle scattering, e.g. small angle X-ray scattering [SAXS]
A method, a system, and a non-transitory computer readable medium for Raman spectroscopy. The method may include determining first acquisition parameters of a Raman spectroscope to provide a first acquisition set-up, the determining is based on at least one expected radiation pattern to be detected by a sensor of the Raman spectroscope as a result of an illumination of a first area of a sample, the first area comprises a first nano-scale structure, wherein at least a part of the at least one expected radiation pattern is indicative of at least one property of interest of the first nano-scale structure of the sample; wherein the first acquisition parameters belong to a group of acquisition parameters; setting the Raman spectroscope according to the first acquisition set-up; and acquiring at least one first Raman spectrum of the first nano-scale structure of the sample, while being set according to the first acquisition set-up.
Positioning apparatus by determining multiple candidate paths for positioning the apparatus at multiple locations, where the positioning requires moving the apparatus in a sequence of movements along multiple axes, selecting a shortest one of the candidate paths requiring a total amount of movement of the apparatus along a selected one of the axes that is less than a total amount of movement of the apparatus required along a specified other of the axes, and causing the apparatus to traverse the selected path.
A method for evaluating a sample, the method includes performing one or more pump probe measurements, wherein a pump probe measurement includes (i) illuminating the sample by a laser pump beam that is modulated by a modulation frequency; (ii) illuminating the sample by a laser probe beam; (iii) detecting radiation resulting from the illumination of the sample; (iv) determining, based on the detected radiation, thermo-reflectance information regarding a sample region located at a depth of the sample; wherein the thermo-reflectance information comprises information about an oscillatory component of a thermal response of the sample measured during the pump probe measurement; and (v) determining a presence of one or more sample abnormalities based on the analysis results.
G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
Systems and methods are provided for measuring properties of a sample such as a semiconductor element by illuminating a polarizing beam splitter (PBS) with spatially separated non-polarized input optical beams such that the PBS polarizes the input optical beams to produce at least two polarized intermediate optical beams having different (e.g., orthogonal) polarization properties. The polarized intermediate optical beams are further directed to illuminate substantially the same area of a sample. Light returned from the illuminated sample area is directed again through the same PBS to form at least two polarized output beams, having different (e.g., orthogonal) polarization properties, where the differently polarized output optical beams are detectable by use of one or more optical detectors. In some embodiments, the sample is simultaneously illuminated by combined intermediate polarized optical beams of different polarization properties and the polarized output optical beams are also simultaneously measured by the optical detector(s).
A method for evaluating a thick transparent layer, the method includes (i) generating information about relationships between measurements of a spectrometer of an interferometer and optical path difference (OPD) values of the interferometer; wherein the generating of the information comprises illuminating the thick transparent layer by the interferometer; (ii) determining one or more thick transparent layer reflection parameters, based on the information about the relationship; and (iii) determining one or more structural properties of the thick transparent layer based on the one or more thick transparent layer reflection parameters.
A system for use in metrology of a patterned structure, the system including a data input utility configured to receive a first type of data related to the patterned structure, the first type of data was obtained by a first type of metrology system and comprises first type measurements and first geometrical information regarding the patterned structure. The data input utility is also configured to receive a second type of data related to the patterned structure, the second type of data was obtained by a second type of metrology system and comprises second type measurement results and second geometrical information regarding the patterned structure; the second type of metrology system differs from the first type of metrology system; and a data processing and analyzing utility configured to determine values of parameters of interest based on the first type of data and the second type of data.
G01B 21/02 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
G06T 7/80 - Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
58.
SYSTEM AND METHOD FOR LIBRARY CONSTRUCTION AND USE IN MEASUREMENTS ON PATTERNED STRUCTURES
A computer system is presented configured and operable as a library constructor for use in extracting one or more parameters of a patterned structure from real time measured data obtained on said structure. The system comprises: data input utility for receiving input data comprising preliminary measured data obtained from at least a part of a structure, and comprising data indicative of user-defined quality of measurement results (QOR); and a data processor.
G06F 8/75 - Structural analysis for program understanding
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A system and methods for OCD metrology are provided including receiving training data for training an OCD machine learning (ML) model, the training data measured from multiple wafers and including multiple pairs of corresponding input and label datasets obtained from each respective wafer. The input dataset of each pair includes multiple scatterometric datasets, measured at multiple respective locations defined by a first map. The label dataset of each pair includes one or more critical dimension (CD) parameters of respective locations defined by a second map, the second map including at least one location not in the first map. The OCD ML model is then applied to a new set of scatterometric datasets, measured from locations of a new wafer, according to the first map, to generate predicted CD parameters of locations of the second map on the new wafer.
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A metrology system that may include (i) thermal response critical dimensions (TRCD) optics that comprises pump beam optics and probe beam optics; wherein during a measurement iteration the pump beam optics are configured to illuminate the structure with a pump beam, and the probe beam optics are configured to illuminate the structure with a probe beam, to collect the response radiation and to sense the response radiation; and (ii) one or more modeling engines that are configured to determine at least one critical dimension of the structure based on the response radiation.
G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
A system for evaluating a sample, the system includes (i) a chopper that includes (i.1) a disc that is made of a transparent material that bears an inner opaque pattern and outer opaque pattern, the outer opaque pattern surrounds the inner opaque pattern, and (i.2) a rotating unit that is configured to rotate the disc during a modulation period, (ii) first optics, (iii) second optics, (iv) a control unit that is configured to detect a second modulated beam from the second optics, and control the rotating unit based on at least one parameter of the second modulated beam.
G02B 26/04 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light by periodically varying the intensity of light, e.g. using choppers
G01N 21/25 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
G01N 21/27 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
Systems and methods for metrology of workpieces such as wafers, using spectrometry of multi-spot-arrays formed over a test area of the tester workpiece, for optically measuring characteristics of the tested workpiece, where the optical metrology system is configured such that the distribution of energy density or flux of the multi-spot-array over the test area of the tested workpiece is such that prevents affecting the workpiece during its testing.
A control system and method are presented for use in optical measurements on patterned samples. The control system comprises a computer system configured for data communication with a measured data provider and comprising a data processor configured and operable to receive and process raw measured data of first and second types concurrently collected from the patterned sample being measured, said first and second types of the measured data comprising, respectively, scatterometry measured data, characterized by first relatively high signal-to-noise and predetermined first relatively low spatial resolution, and interferometric measured data characterized by second relatively low signal-to-noise and predetermined second relatively high spatial resolution, said data processor being configured to process the measured data to determine pattern parameters along said patterned sample characterized by said first signal to-noise and said second spatial resolution.
A method for optical metrology of a sample, the method may include illuminating areas of the sample by sets of pulses of different wavelengths, during a movement of a variable speed of the sample; collecting light reflected from the sample, as a result of the illuminating, to provide sets of frames, each set of frames comprises partially overlapping frames associated with the different wavelengths; and processing the frames to provide optical metrology results indicative of one or more evaluated parameters of elements of the areas of the sample; wherein the processing is based on a mapping between the sets of frames and reference measurements obtained by an other optical metrology process that exhibits a higher spectral resolution than a spectral resolution obtained by the illuminating and the collecting.
A system and method are presented for controlling measurements of various sample's parameters. The system comprises a control unit configured as a computer system comprising data input and output utilities, memory, and a data processor, and being configured to communicate with a measured data provider to receive measured data indicative of measurements on the sample. The data processor is configured to perform model-based processing of the measured data utilizing at least one predetermined model, and determine, for each of one or more measurements of one or more parameters of interest of the sample, an estimated upper bound on an error value for the measurement individually, and generate output data indicative thereof.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method, a system, and a non-transitory computer readable medium for Raman spectroscopy. The method may include determining first acquisition parameters of a Raman spectroscope to provide a first acquisition set-up, the determining is based on at least one expected radiation pattern to be detected by a sensor of the Raman spectroscope as a result of an illumination of a first area of a sample, the first area comprises a first nano-scale structure, wherein at least a part of the at least one expected radiation pattern is indicative of at least one property of interest of the first nano-scale structure of the sample; wherein the first acquisition parameters belong to a group of acquisition parameters; setting the Raman spectroscope according to the first acquisition set-up; and acquiring at least one first Raman spectrum of the first nano-scale structure of the sample, while being set according to the first acquisition set-up.
A method for use in optical measurements on patterned structures, the method including performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure, the measurements including detecting light reflected from the at least part of the at least two different regions within the measurement spot, the detected light including interference of at least two complex electric fields reflected from the at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.
G01N 21/956 - Inspecting patterns on the surface of objects
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
68.
Measuring local CD uniformity using scatterometry and machine learning
A method, a system, and a non-transitory computer readable medium for measuring a local critical dimension uniformity of an array of two-dimensional structural elements, the method may include obtaining an acquired optical spectrometry spectrum of the array; feeding the acquired optical spectrometry spectrum of the array to a trained machine learning process, wherein the trained machine learning process is trained to map an optical spectrometry spectrum to an average critical dimension (CD) and a local critical dimension uniformity (LCDU); and outputting, by the trained machine learning process, the average CD and the LCDU of the array.
A measurement system is provided for use in optical metrology measurements. The measurement system comprises a control system which processes raw measured data indicative of spectral interferometric signals measured on a sample in response to illuminating electromagnetic field incident onto a top portion of the sample and comprising at least one spectral range to which said sample is substantially not absorbing. The processing comprises: extracting, from the raw measured data, a portion of spectral interferometric signals describing signal intensity variation with change of optical path difference during interferometric measurements, the extracted signal portion being independent of interferometric signals returned from a bottom portion of the sample in response to said illuminating electromagnetic field; and directly determining, from said extracted portion, both spectral amplitude and phase of reflection of the electromagnetic field from the top portion of the sample, thereby determining measured spectral signature characterizing the top portion of the sample.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A system and methods for Advance Process Control (APC) in semiconductor manufacturing include: for each of a plurality of waiter sites, receiving a pre-process set of scatterometric training data, measured before implementation of a processing step, receiving a corresponding post-process set of scatterometric training data measured after implementation of the process step, and receiving a set of process control knob training data indicative of process control knob settings applied during implementation of the process step; and generating a machine learning model correlating variations in the pre-process sets of scatterometric training data and the corresponding process control knob training data with the corresponding post-process sets of scatterometric training data, to train the machine learning model to recommend changes to process control knob settings to compensate for variations in the pre-process scatterometric data.
G05B 13/02 - Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An integrated metrology system for evaluating semiconductor wafers, the metrology system comprises a main body that has a rear side and a front side; the front side defines a front border of the main body; one or more detachable supporting units that are detachably coupled to the main body and support the main body while extending outside the front border; and at least one auxiliary supporting unit that is configured to support the main body at an absence of the one or more detachable supporting units
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
A method, a system, and a non-transitory computer readable medium for accurate Raman spectroscopy. The method may include executing at least one iteration of the steps of: (i) performing, by an optical measurement system, a calibration process that comprises (a) finding a misalignment between a region of interest defined by a spatial filter, and an impinging beam of radiation that is emitted from an illuminated area of a sample, the impinging beam impinges on the spatial filter; and (b) determining a compensating path of propagation of the impinging beam that compensates the misalignment; and (ii) performing a measurement process, while the optical measurement system is configured to provide the compensating path of propagation of the impinging beam, to provide one or more Raman spectra.
A combined OCD and photoreflectance system and method for improving the OCD performance in measurements of optical properties of a target sample. The system comprises (a) either a single channel OCD set-up comprised of a single probe beam configured in a direction normal/oblique to the target sample or a multi-channel OCD set-up having multiple probe beams configured in normal and oblique directions to the target sample for measuring the optical properties of the target sample, (b) at least one laser source for producing at least one laser beam, (c) at least one modulation device to turn the at least one laser beam into at least one alternatingly modulated laser beam, and (d) at least one spectrometer for measuring spectral components of the at least one light beam reflecting off said target sample; wherein the at least one alternatingly modulated laser beam is alternatingly modulating the spectral reflectivity of the target sample.
G01N 21/956 - Inspecting patterns on the surface of objects
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
A system and methods for OCD metrology are provided including receiving reference parameters, receiving multiple sets of measured scatterometric data, and receiving an optical model designed to generate one or more sets of model scatterometric data according to a set of pattern parameters, and training a machine learning model by applying, during the training, target features including the reference parameters, and by applying input features including the sets of measured scatterometric data and the sets of model scatterometric data, such that the trained machine learning model estimates new wafer pattern parameters from subsequently sets of measured scatterometric data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
75.
Self-supervised representation learning for interpretation of OCD data
A system and methods for OCD metrology are provided including receiving multiple first sets of scatterometric data, dividing each set into k sub-vectors, and training, in a self-supervised manner, k2 auto-encoder neural networks that map each of the k sub-vectors to each other. Subsequently multiple respective sets of reference parameters and multiple corresponding second sets of scatterometric data are received and a transfer neural network (NN) is trained. Initial layers include a parallel arrangement of the k2 encoder neural networks. Target output of the transfer NN training is set to the multiple sets of reference parameters and feature input is set to the multiple corresponding second sets of scatterometric data, such that the transfer NN is trained to estimate new wafer pattern parameters from subsequently measured sets of scatterometric data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
76.
Detecting outliers and anomalies for OCD metrology machine learning
A system and methods for OCD metrology are provided including receiving training data for training an OCD machine learning (ML) model, including multiple pairs of corresponding sets of scatterometric data and reference parameters. For each of the pairs, one or more corresponding outlier metrics are by calculated and corresponding outlier thresholds are applied whether a given pair is an outlier pair. The OCD MIL model is then trained with the training data less the outlier pairs.
G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
77.
Method and system for broadband photoreflectance spectroscopy
Photoreflectance (PR) spectroscopy system and method for accumulating separately a “pump on” light beam and a “pump off light beam reflecting off a sample. The system comprises: (a) a probe source for producing a probe beam, the probe beam is used for measuring spectral reflectivity of a sample, (b) a pump source for producing a pump beam, (c) at least one spectrometer, (d) a first modulation device to allow the pump beam to alternatingly modulate the spectral reflectivity of the sample, so that, a light beam reflecting from the sample is alternatingly a “pump on” light beam and a “pump off light beam, (e) a second modulation device in a path of the light beam reflecting off the sample to alternatingly direct the “pump on” light beam and the “pump off light beam to the at least one spectrometer, and (f) a computer.
Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.
A method for semiconductor device metrology. The method may include creating a time-domain representation of wavelength-domain measurement data of light reflected by a three dimensional (3D) patterned structure of a semiconductor device; selecting one or more relevant peaks of the time-domain representation and at least one irrelevant portion of the time-domain representation. One or more relevant peaks occur during one or more relevant time periods; and are associated with corresponding relevant reference peaks that are associated with different versions of a reference 3D patterned structure.
A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure.
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
81.
Raman spectroscopy based measurements in patterned structures
A method for use in measuring one or more characteristics of patterned structures, the method including providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the one or more characteristics to be measured, processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme, and analyzing the distribution of Raman-contribution efficiency and determining the one or more characteristics of the structure.
G01L 1/24 - Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis
G01N 21/01 - Arrangements or apparatus for facilitating the optical investigation
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.
A semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting a relevant and irrelevant portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the relevant portion of the time-domain representation.
A method, a system, and a non-transitory computer readable medium for evaluating x-ray signals. The method may include calculating an estimated field for each of multiple non-perturbed objects, the multiple non-perturbed objects represent perturbances of the perturbed object; the perturbances are of an order of a wavelength of the non-diffused x-ray signals; and evaluating the non-diffused x-ray signals based on the field of the multiple non-perturbed objects.
Controlling semiconductor device manufacture by acquiring training scatterometric signatures collected at training locations on training semiconductor wafers and corresponding to locations within a predefined design of a training semiconductor device, the training signatures collected after predefined processing steps during manufacture of the device on the training wafers, acquiring manufacturing outcome data associated with the training locations, training a prediction model using the training signatures and the manufacturing outcome data, and applying the prediction model to a candidate scatterometric signature to predict a manufacturing outcome, the candidate signature collected at a candidate location on a candidate semiconductor wafer, the candidate location corresponding to a location within the same predefined design of a candidate semiconductor device, the candidate signature collected after any of the processing steps during manufacture of the candidate device on the candidate wafer.
G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
H01L 21/66 - Testing or measuring during manufacture or treatment
G06F 119/18 - Manufacturability analysis or optimisation for manufacturability
86.
Monitoring system and method for verifying measurements in patterned structures
A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.
G01L 1/24 - Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis
G01N 21/01 - Arrangements or apparatus for facilitating the optical investigation
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
88.
Test structure design for metrology measurements in patterned samples
A test structure for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis, the test structure having a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some of those features of the main pattern, parameters of which are to be controlled during metrology measurements.
A method, a system, and a non-transitory computer readable medium for Raman spectroscopy. The method may include determining first acquisition parameters of a Raman spectroscope to provide a first acquisition set-up, the determining is based on at least one expected radiation pattern to be detected by a sensor of the Raman spectroscope as a result of an illumination of a first area of a sample, the first area comprises a first nano-scale structure, wherein at least a part of the at least one expected radiation pattern is indicative of at least one property of interest of the first nano-scale structure of the sample; wherein the first acquisition parameters belong to a group of acquisition parameters; setting the Raman spectroscope according to the first acquisition set-up; and acquiring at least one first Raman spectrum of the first nano-scale structure of the sample, while being set according to the first acquisition set-up.
A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure.
G01N 23/2273 - Measuring photoelectron spectra, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]
H01L 21/66 - Testing or measuring during manufacture or treatment
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/2208 - Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement all measurements being of secondary emission, e.g. combination of SE measurement and characteristic X-ray measurement
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
A method for optical metrology of a sample, the method may include illuminating areas of the sample by sets of pulses of different wavelengths, during a movement of a variable speed of the sample; collecting light reflected from the sample, as a result of the illuminating, to provide sets of frames, each set of frames comprises partially overlapping frames associated with the different wavelengths; and processing the frames to provide optical metrology results indicative of one or more evaluated parameters of elements of the areas of the sample; wherein the processing is based on a mapping between the sets of frames and reference measurements obtained by an other optical metrology process that exhibits a higher spectral resolution than a spectral resolution obtained by the illuminating and the collecting.
A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal.
G01N 23/201 - Measuring small-angle scattering, e.g. small angle X-ray scattering [SAXS]
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
G01N 23/207 - Diffractometry, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
93.
Layer detection for high aspect ratio etch control
Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi-layered structure.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
94.
Metrology and process control for semiconductor manufacturing
A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
Systems and methods for metrology of workpieces such as wafers, using spectrometry of multi- spot- arrays formed over a test area of the tester workpiece, for optically measuring characteristics of the tested workpiece, where the optical metrology system is configured such that the distribution of energy density or flux of the multi-spot-array over the test area of the tested workpiece is such that prevents affecting the workpiece during its testing.
A system and method are presented for controlling measurements of various sample's parameters. The system comprises a control unit configured as a computer system comprising data input and output utilities, memory, and a data processor, and being configured to communicate with a measured data provider to receive measured data indicative of measurements on the sample. The data processor is configured to perform model-based processing of the measured data utilizing at least one predetermined model, and determine, for each of one or more measurements of one or more parameters of interest of the sample, an estimated upper bound on an error value for the measurement individually, and generate output data indicative thereof.
A measurement system is presented configured for integration with a processing equipment for applying optical measurements to a structure. The measurement system comprises: a support assembly for holding a structure under measurements in a measurement plane, configured and operable for rotation in a plane parallel to the measurement plane and for movement along a first lateral axis in said measurement plane; an optical system defining illumination and collection light channels of normal and oblique optical schemes and comprising an optical head comprising at least three lens units located in the illumination and collection channels; a holder assembly comprising: a support unit for carrying the optical head, and a guiding unit for guiding a sliding movement of the support unit along a path extending along a second lateral axis perpendicular to said first lateral axis; and an optical window arrangement comprising at least three optical windows made in a faceplate located between the optical head at a certain distance from the measurement plane. The optical windows are aligned with the illumination and collection channels for, respectively, propagation of illuminating light from the optical head and propagation of light returned from an illuminated region to the optical head, in accordance with the normal and oblique optical schemes.
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G01B 5/00 - Measuring arrangements characterised by the use of mechanical techniques
G01N 21/84 - Systems specially adapted for particular applications
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 21/956 - Inspecting patterns on the surface of objects
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
98.
MACHINE AND DEEP LEARNING METHODS FOR SPECTRA-BASED METROLOGY AND PROCESS CONTROL
A system and methods for Advance Process Control (APC) in semiconductor manufacturing include: for each of a plurality of waiter sites, receiving a pre-process set of scatterometric training data, measured before implementation of a processing step, receiving a corresponding post-process set of scatterometric training data measured after implementation of the process step, and receiving a set of process control knob training data indicative of process control knob settings applied during implementation of the process step; and generating a machine learning model correlating variations in the pre-process sets of scatterometric training data and the corresponding process control knob training data with the corresponding post-process sets of scatterometric training data, to train the machine learning model to recommend changes to process control knob settings to compensate for variations in the pre-process scatterometric data.
A polarized Raman Spectrometric system for defining parameters of a polycrystaline material, the system comprises a polarized Raman Spectrometric apparatus, a computer-controlled sample stage for positioning a sample at different locations, and a computer comprising a processor and an associated memory. The polarized Raman Spectrometric apparatus generates signal(s) from either small sized spots at multiple locations on a sample or from an elongated line-shaped points on the sample, and the processor analyzes the signal(s) to define the parameters of said polycrystalline material.
Scatterometry analysis for a patterned structure, in which a patterned structure model is provided having a selected number of virtual segment data pieces indicative of a respective number of segments of the patterned structure along Z-axis through the structure, the segment data pieces processed for determining a matrix comprising Z-axis derivatives of electromagnetic elds' response of the segment to incident eld based on Maxwell's equations' solution, transforming this matrix into an approximated response matrix corresponding to the electromagnetic eld interaction between two different points spaced along the Z-axis, the transformation preferably carried out by a GPU, and comprises embedding the matrix in a series expansion of the matrix exponential term, the approximated response matrices for all the segment data pieces are multiplied for determining a general propagation matrix utilized to determine a scattering matrix for the patterned structure.
