Suzhou Lekin Semiconductor Co., Ltd.

China

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2025 May 1
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IPC Class
A45D 29/00 - Manicuring or pedicuring implements 1
B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation 1
B29C 35/08 - Heating or curing, e.g. crosslinking or vulcanising by wave energy or particle radiation 1
B29C 64/386 - Data acquisition or data processing for additive manufacturing 1
B33Y 40/20 - Post-treatment, e.g. curing, coating or polishing 1
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Found results for  patents

1.

ULTRAVIOLET CURING METHOD AND SYSTEM, AND MANICURE APPARATUS AND ADDITIVE PRINTING APPARATUS

      
Application Number CN2024106890
Publication Number 2025/102805
Status In Force
Filing Date 2024-07-23
Publication Date 2025-05-22
Owner
  • SUZHOU LEKIN SEMICONDUCTOR CO., LTD. (China)
  • GUSU LABORATORY OF MATERIALS (China)
Inventor
  • Liang, Jian
  • Zhang, Zhengjie
  • Wei, Yongqiang
  • Shen, Yanwei
  • Wang, Zhiwei
  • Wang, Pengfei
  • Xu, Qiming

Abstract

Disclosed in the present invention are an ultraviolet curing method and system, and a manicure apparatus and an additive printing apparatus. The method comprises: acquiring morphological information of a region to be irradiated of an object to be irradiated that is within the irradiation range of an ultraviolet projection system; on the basis of the morphological information, calculating the distance between each block in the region to be irradiated and the ultraviolet projection system; on the basis of the region to be irradiated, generating an irradiation pattern matching the region to be irradiated; on the basis of the irradiation pattern, the ultraviolet projection system forming an illumination region matching the irradiation pattern; and on the basis of the morphological information and the distance between each block in the region to be irradiated and the ultraviolet projection system, adjusting the light-emission intensity of a light-emitting point at each position in the ultraviolet projection system. In the ultraviolet curing method and system and the manicure apparatus provided in the present invention, by means of acquiring, in real time, morphological information of an object to be irradiated, and generating, on the basis of the information, an irradiation pattern matching a region to be irradiated, the precise irradiation for an ultraviolet irradiation region on a surface to be cured is realized.

IPC Classes  ?

  • B29C 64/386 - Data acquisition or data processing for additive manufacturing
  • B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
  • A45D 29/00 - Manicuring or pedicuring implements
  • G06T 7/00 - Image analysis
  • G06T 7/13 - Edge detection
  • G06T 7/50 - Depth or shape recovery
  • G06T 7/73 - Determining position or orientation of objects or cameras using feature-based methods
  • B29C 35/08 - Heating or curing, e.g. crosslinking or vulcanising by wave energy or particle radiation
  • B33Y 40/20 - Post-treatment, e.g. curing, coating or polishing
  • B33Y 50/00 - Data acquisition or data processing for additive manufacturing

2.

SEMICONDUCTOR FABRICATION DEVICE AND METHOD

      
Application Number CN2023119359
Publication Number 2024/082898
Status In Force
Filing Date 2023-09-18
Publication Date 2024-04-25
Owner
  • SUZHOU LEKIN SEMICONDUCTOR CO., LTD. (China)
  • GUSU LABORATORY OF MATERIALS (China)
Inventor
  • Liang, Jian
  • Zhang, Zhengjie
  • Wang, Zhiwei

Abstract

A semiconductor fabrication device and method. The semiconductor fabrication device comprises a vacuum reaction chamber and a controller; a reaction gas spraying assembly, a reaction platform and a film thickness monitoring assembly are disposed in the vacuum reaction chamber. The controller can acquire growth film thickness distribution information of an epitaxial substrate on the reaction platform measured by the film thickness monitoring assembly, and controls the spraying assembly to regulate and control the distribution of the reaction gas in the vacuum reaction chamber. In the spraying assembly, a plurality of gas-regulating holes are distributed on the side of a spraying housing facing the reaction platform. An adjusting assembly comprises a mounting plate, an array driving circuit and a plurality of gas micro-control devices. The mounting plate is provided with a plurality of mounting holes. The gas micro-control devices are arranged at the mounting holes. The gas micro-control devices can be controlled by the array driving circuit to regulate and control the air outlet area of the mounting holes. The mounting holes communicate with a spraying chamber and the gas-regulating holes.

IPC Classes  ?

  • C30B 25/02 - Epitaxial-layer growth
  • C30B 25/16 - Controlling or regulating
  • H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
  • H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components