Disclosed in the present invention are an ultraviolet curing method and system, and a manicure apparatus and an additive printing apparatus. The method comprises: acquiring morphological information of a region to be irradiated of an object to be irradiated that is within the irradiation range of an ultraviolet projection system; on the basis of the morphological information, calculating the distance between each block in the region to be irradiated and the ultraviolet projection system; on the basis of the region to be irradiated, generating an irradiation pattern matching the region to be irradiated; on the basis of the irradiation pattern, the ultraviolet projection system forming an illumination region matching the irradiation pattern; and on the basis of the morphological information and the distance between each block in the region to be irradiated and the ultraviolet projection system, adjusting the light-emission intensity of a light-emitting point at each position in the ultraviolet projection system. In the ultraviolet curing method and system and the manicure apparatus provided in the present invention, by means of acquiring, in real time, morphological information of an object to be irradiated, and generating, on the basis of the information, an irradiation pattern matching a region to be irradiated, the precise irradiation for an ultraviolet irradiation region on a surface to be cured is realized.
B29C 64/386 - Data acquisition or data processing for additive manufacturing
B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer disposed on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first conductive semiconductor layer includes a first superlattice layer including a plurality of first sub layers and a plurality of second sub layers, and a first sub layer of the plurality of first sub layers and a second sub layer of the plurality of second sub layers are alternately disposed. The semiconductor structure includes a composition of a first dopant which is a n-type dopant.
H10D 62/824 - Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
H10D 62/854 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
In a surface emitting laser package, a surface emitting laser element and a substrate may be electrically connected through a diffusion part. In detail, according to the surface emitting laser package, a housing includes a step, the diffusion part is disposed at the step of the housing, and the surface emitting laser element and the substrate may be electrically connected through a connection wiring extending through the housing to correspond to the step and a conductive line disposed at one side of the diffusion part.
H01S 5/18 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
A semiconductor device package includes a substrate; and a plurality of semiconductor structures disposed to be spaced apart from each other at a central portion of the substrate. Further, the semiconductor structure is disposed on the substrate and includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer disposed on the first conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The semiconductor device package also includes a plurality of first interconnection lines disposed between the substrate and the plurality of semiconductor structures and electrically connected to the first conductivity-type semiconductor layer; and a plurality of second interconnection lines disposed between the substrate and the plurality of semiconductor structures and electrically connected to the second conductivity-type semiconductor layer.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A semiconductor fabrication device and method. The semiconductor fabrication device comprises a vacuum reaction chamber and a controller; a reaction gas spraying assembly, a reaction platform and a film thickness monitoring assembly are disposed in the vacuum reaction chamber. The controller can acquire growth film thickness distribution information of an epitaxial substrate on the reaction platform measured by the film thickness monitoring assembly, and controls the spraying assembly to regulate and control the distribution of the reaction gas in the vacuum reaction chamber. In the spraying assembly, a plurality of gas-regulating holes are distributed on the side of a spraying housing facing the reaction platform. An adjusting assembly comprises a mounting plate, an array driving circuit and a plurality of gas micro-control devices. The mounting plate is provided with a plurality of mounting holes. The gas micro-control devices are arranged at the mounting holes. The gas micro-control devices can be controlled by the array driving circuit to regulate and control the air outlet area of the mounting holes. The mounting holes communicate with a spraying chamber and the gas-regulating holes.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
6.
Surface emitting laser device and a light emitting device including the same
An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an active region disposed on the active layer and having an aperture and an insulation region disposed around the aperture; and a second reflective layer disposed on the active region. The second reflective layer may include a core reflective layer disposed in a position vertically corresponding to the aperture. The embodiment may include a cladding insulation layer disposed around the core reflective layer. The horizontal cross-section of the aperture may be different from the horizontal cross-section of the core reflective layer.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/32 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
A light emitting device package including a package body comprising a first opening; a light emitting device disposed in the first opening and including a first bonding part and a second bonding part; a first conductor disposed below the first bonding part; and a second conductor disposed below the second bonding part. Further, the first conductor is electrically connected to the first bonding part, and the second conductor is electrically connected to the second bonding part.
An embodiment relates to a light emitting device package and a lighting apparatus having the same. According to the embodiment, a light emitting device package includes a first lead frame; a second lead frame spaced apart from the first lead frame; a body coupled to the first lead frame and the second lead frame and includes a first cavity which exposes a portion of the upper surface of the first lead frame, a second cavity which exposes a portion of the upper surface of the second lead frame, and a spacer which is disposed between the first lead frame and the second frame; at least one light emitting device disposed in the first cavity; and a protection device disposed in the second cavity. The second cavity is disposed on a first inside surface of the first cavity and the first inside surface is connected to an upper surface of the spacer, and an area of a bottom surface of the first cavity is equal to or less than 40% of entire area of the body.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A light source module including a fixing plate configured to extend in a first direction; a circuit board disposed on the fixing plate; a plurality of ultraviolet light emitting elements disposed on the circuit board in the first direction; a first reflection plate disposed at one side of the fixing plate; and a second reflection plate disposed at the other side of the fixing plate. Further, the plurality of ultraviolet light emitting elements are disposed between the first reflection plate and the second reflection plate in the first direction.
A light emitting device including a body having a recess; a light emitting chip disposed in the recess; a first dampproof layer sealing the light emitting chip and extended from a surface of the light emitting chip to a bottom of the recess; a light transmitting layer disposed on the recess; and a second dampproof layer having an open area in which an upper surface of the light transmitting layer is exposed and extended from an outer side area of the upper surface of the light transmitting layer to an upper surface and a side surface of the body. Further, the first dampproof layer and the second dampproof layer include a fluororesin-based material.
Disclosed is a sterilization device. One embodiment of the sterilization device comprises: a frame including a first coupling part, a second coupling part, and a first connection part for connecting the first coupling part and the second coupling part; a first circuit board disposed in the first coupling part; a second circuit board disposed in the second coupling part; a first ultraviolet light emitting element disposed on one surface of the first circuit board so as to face in a first direction; a second ultraviolet light emitting element disposed on one surface of the second circuit board so as to face in a second direction crossing the first direction; and a first wiring part connected to the second circuit board to supply power, wherein the first connection part includes a first through-hole through which the first wiring part passes.
The surface emitting laser device according to the embodiment includes a substrate, a first metal layer disposed on the substrate, a second metal layer disposed on the first metal layer, and a third metal layer disposed between the first metal layer and the second metal layer.
The first to third metal layers may include different materials, and the second metal layer may include copper (Cu).
The third metal layer may prevent diffusion of copper from the second metal layer into the first metal layer.
H01S 5/0237 - Fixing laser chips on mounts by soldering
H01S 5/18 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
An embodiment relates to a light emitting device package and a lighting apparatus having the same. According to the embodiment, a light emitting device package includes a first lead frame; a second lead frame spaced apart from the first lead frame; a body coupled to the first lead frame and the second lead frame and includes a first cavity which exposes a portion of the upper surface of the first lead frame, a second cavity which exposes a portion of the upper surface of the second lead frame, and a spacer which is disposed between the first lead frame and the second frame; at least one light emitting device disposed in the first cavity; and a protection device disposed in the second cavity. The second cavity is disposed on a first inside surface of the first cavity and the first inside surface is connected to an upper surface of the spacer, and an area of a bottom surface of the first cavity is equal to or less than 40% of entire area of the body.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/54 - Encapsulations having a particular shape
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
14.
Surface emitting laser device and light emitting device including the same
An embodiment relates to a surface emitting laser device and a light emitting device including the same. A surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an aperture area disposed on the active layer and including an aperture and an insulating region; and a second reflective layer disposed in the aperture area. The active layer may comprise a plurality of quantum wells, quantum barriers, and intermediate layers disposed between the quantum wells and the quantum barriers. The quantum wells and the quantum barriers may include a ternary material, and the intermediate layers may comprise a binary material.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
15.
Light emitting semiconductor device for enhancing light extraction efficiency
A semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode provided on a first surface of the first semiconductor layer; a second electrode provided on a first surface of the second semiconductor layer, the active layer being provided between the first surface of the first semiconductor layer and a second surface of the second semiconductor layer that is opposite to the first surface of the second semiconductor layer; a first insulation layer provided on the first surface of the first semiconductor layer, the first surface of the second semiconductor layer, and a side surface of the active layer; a first cover electrode provided on the first electrode; a second cover electrode provided on the second electrode, a second insulation layer provided on the first cover electrode, the second cover electrode, and the first insulation layer, wherein: the second insulation layer includes a first opening over the first cover electrode and a second opening over the second cover electrode, and a plan view of the semiconductor includes a light emitting region that includes a surface of the second cover electrode in the second opening of the second insulation layer, and a non-light emitting region that includes a surface of the first cover electrode in the second opening of the first insulation layer, and a first area of the non-light emitting region is smaller than a second area of the light emitting region.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Embodiments provide a light emitting device package including a package body having a through-hole; a radiator disposed in the through-hole and including an alloy layer having Cu; and a light emitting device disposed on the radiator, wherein the alloy layer includes at least one of W or Mo, and wherein the package body includes cavity including a sidewall and a bottom surface, and wherein the through-hole is formed in the bottom surface.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
17.
Semiconductor device including indium, silicon and carbon with varying concentrations
A semiconductor device including first to fourth points defined using In ion intensity, Si concentration, and C concentration obtained from SIMS data. The active layer of the device is a first region between the first point and the second point. In addition, the C concentration in a third region between the third point and the fourth point is higher than the C concentration in a second region adjacent to the fourth region along a second direction. Also, the Si concentration in the second region is higher than the Si concentration in the third region.
An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment includes: a first emitter having a first aperture and a first insulating region; a second emitter having a second aperture and a second insulating region and disposed adjacent to the first emitter; a third emitter having a third aperture and a third insulating region and disposed adjacent to the first emitter and the second emitter; and a first trench region disposed between the first emitter and the third emitter. The first trench region is disposed inside a virtual triangle connecting a center of the first aperture of the first emitter, a center of the second aperture of the second emitter, and a center of the third aperture of the third emitter.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.
A light emitting device package according to an embodiment comprises: first and second frames disposed spaced apart from each other; a body disposed surrounding the first and second frames and having first and second openings spaced apart from each other; a light emitting device disposed on the body and including first and second bonding parts; and first and second conductive parts disposed in the first and second openings respectively, wherein the first and second openings perpendicularly overlap the first and second frames respectively, the first and second conductive parts are electrically connected to the first and second frames respectively, the first and second bonding parts are disposed in the first and second openings respectively, and are electrically connected to the first and second conductive parts, and the light emitting device includes a support region disposed on the body outside the first and second openings. In addition, a light source module, according to an embodiment, comprises a circuit board and at least one light emitting device package disposed on the circuit board.
Disclosed in an embodiment is a light-emitting element package comprising: a body including a cavity; a light-emitting element arranged on the bottom surface of the cavity and including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer, which is arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a light-transmitting member arranged on the upper part of the cavity, wherein the body includes: a lower body including the bottom surface of the cavity; an upper body including the lateral surface of the cavity; and a first insulating layer arranged between the lower body and the upper body, the lower body includes a first conductive body and a second conductive body insulated and arranged together with the first conductive body, the first conductive type semiconductor layer is electrically connected with the first conductive body, the second conductive type semiconductor layer is electrically connected with the second conductive body, and the height from the lower surface of the lower body to the bottom surface of the cavity is less than the height from the lower surface of the lower body to the lower surface of the first insulating layer.
Disclosed in an embodiment is a semiconductor device comprising: a substrate; a light emitting structure including a first conductive semiconductor layer and a second conductive semiconductor layer, which are arranged on the substrate, an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, a concave part that is concave on the second conductive semiconductor layer toward the first conductive semiconductor layer, and a recess; a first electrode arranged on the concave part and electrically connected to the first conductive semiconductor layer; a second electrode arranged on the light emitting structure and electrically connected to the second conductive semiconductor layer; a first pad arranged on the first electrode; and a second pad arranged on the second electrode, wherein the recess separates the second conductive semiconductor layer and the active layer into an active region and an inactive region, and the first pad vertically overlaps the concave part, the second conductive semiconductor layer on the inactive region, and the recess.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
One embodiment discloses a semiconductor device comprising: a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses arranged up to a partial area of the first conductive semiconductor layer by penetrating the second conductive semiconductor layer and the active layer, and a second recess arranged between the plurality of first recesses; a plurality of first electrodes arranged inside the plurality of first recesses, and electrically connected with the first conductive semiconductor layer; a plurality of second electrodes electrically connected to the second conductive semiconductor layer; and a reflective layer arranged inside the second recess, wherein the sum of the area of the plurality of first recesses and the area of the second recess is 60% or less of the maximum area in a first direction of the semiconductor structure, the area of the plurality of first recesses and the area of the second recess are the areas formed on the lower surface of the semiconductor structure, and the first direction is vertical to the thickness direction of the semiconductor structure.
An embodiment provides a semiconductor device comprising: a substrate; a bonding layer disposed on the substrate; an electrode layer disposed on the bonding layer; a semiconductor structure disposed on the electrode layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer includes a through-hole, and the second electrode is disposed in the through-hole so as to be electrically connected to the electrode layer.
An embodiment relates to a light emitting module, a flash module, and a terminal including the same. The light emitting module according to an embodiment comprises: a semiconductor layer; a phosphor layer arranged on one surface of the semiconductor layer; a plurality of light emitting chips including a plurality of electrodes arranged on a surface facing one surface of the semiconductor layer; a first partition arranged at one side of the plurality of light emitting chips, and a second partition arranged at the other side of the plurality of light emitting chips so as to face the first partition; and an opaque molding part, which encompasses the plurality of light emitting chips such that the upper surface of the phosphor layer and the bottom surfaces of the plurality of electrodes are exposed to the outside, and is arranged on the inner side of the first and second partitions. The light emitting module according to the embodiment comprises: a semiconductor layer; a phosphor layer arranged on one surface of the semiconductor layer; a plurality of light emitting chips including a plurality of electrodes arranged on a surface facing one surface of the semiconductor layer; and an opaque molding part, which encompasses the plurality of light emitting chips such that the upper surface of the phosphor layer and the bottom surfaces of the plurality of electrodes are exposed to the outside.
G03B 15/05 - Combinations of cameras with electronic flash apparatusElectronic flash units
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
An embodiment discloses a sterilization module comprising: a frame including a support part that includes one surface and one end, and a fastening part connected to the one end; a first circuit board disposed in the fastening part; and an ultraviolet irradiation device disposed on the first circuit board, wherein the support part comprises: the other end facing the one end; and a side end facing the other end. The frame comprises: a protrusion connected to the side end of the support part; and a guide part connected to the other end of the support part. The fastening part and the guide part extend in a first direction perpendicular to one surface of the support part, and the protrusion extends in a direction opposite to the first direction. The guide part comprises: a first guide part and a second guide part that are spaced apart from each other in a second direction parallel to the one end. The other end comprises a recess between the first guide part and the second guide part, wherein the recess is concave toward the one end.
A semiconductor device including a conductive substrate; a semiconductor structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and including a plurality of recesses; a first electrode electrically connecting the first conductive type semiconductor layer to the conductive substrate; a second electrode electrically connected to the second conductive type semiconductor layer; and an insulating layer arranged inside the plurality of recesses. The plurality of recesses include a first recess and a plurality of second recesses, the first electrode includes a plurality of protrusion electrodes extending to the inside of the second, the active layer includes an inactive area arranged between the semiconductor structure and the first recess, and an active area arranged on the inner side of the first recess.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
C02F 1/32 - Treatment of water, waste water, or sewage by irradiation with ultraviolet light
28.
Semiconductor device with an arrangement of recesses for receiving electrodes
An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, and a plurality of first recesses and second recesses which extend through the second conductive semiconductor layer and the active layer and are arranged up to one region of the first conductive semiconductor layer, a first electrode disposed inside each of the first recesses and second recesses to be electrically connected to the first conductive semiconductor layer, and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer include aluminum, and the number of most adjacent recesses in the plurality of second recesses is fewer than that in the plurality of first recesses and the plurality of second recesses include multiple recesses, each having an area larger than that of each of the plurality of first recesses.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
An embodiment provides a semiconductor device package, the semiconductor device package comprising: a substrate including an electrode disposed on one surface; a metal sidewall disposed on the substrate while surrounding the electrode; a semiconductor device disposed on the electrode; and a light transmitting member disposed on the metal sidewall to cover the semiconductor device, wherein the metal sidewall has the inner surface and the outer surface which are corrugated, and includes: a first metal part disposed on the substrate; a second metal part disposed on the first metal part; and a third metal part disposed on the second metal part, and the inner surface or the outer surface of the metal sidewall includes a recess portion between the second metal part and the third metal part.
H01L 33/28 - Materials of the light emitting region containing only elements of group II and group VI of the periodic system
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
30.
Surface emitting laser device, light-emitting device including the same and manufacturing method thereof
3) A ratio (b/a) of a second minimum diameter (b) to a first maximum diameter (a) of the aperture may be [95.0−(2X/3)]% to [99.9−(X/3)]%, wherein X may be 0 to 3.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
31.
Light-emitting element package and light source module
A light-emitting element package according to an embodiment comprises: a body comprising a cavity; the cavity; a first frame and a second frame arranged on the bottom surface of the cavity; a first metal layer disposed on the first frame; an ultraviolet light-emitting element disposed on the first metal layer; and a second metal layer disposed on the second frame and electrically connected to the second frame, wherein the body comprises a separation portion between the first frame and the second frame, the second metal layer extends over the sloping surface of the cavity and the separation portion of the body, and the second metal layer is spaced apart from the first metal layer in the cavity and surrounds the first metal layer.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
Disclosed in an embodiment is a semiconductor device package comprising: a body comprising a cavity; a semiconductor device disposed within the cavity; and a light transmission member disposed on an upper portion of the cavity, wherein the body comprises a first conductive part and a second conductive part disposed to be spaced apart from each other in a first direction, a first insulating part disposed between the first conductive part and the second conductive part, and a second insulating part disclosed in an edge region where a lower surface and side surfaces of the body meet, wherein the cavity comprises a stepped portion on which the light transmission member is disposed, and wherein the second insulating part overlaps with the stepped portion in a vertical direction of the body.
A light-emitting device package according to one embodiment comprises: a body including a through-hole formed in an upper surface and a lower surface; a light-emitting device arranged on the upper surface of the body and including first and second bonding units spaced apart from each other; and first and second metal units arranged so as to be spaced apart from each other on the rear surface of the body, wherein a partial area of each of the first and second bonding units overlaps with the through-hole in a vertical direction, the first and second metal units respectively includes first and second extension portions extending to the through-hole; the first and second extension portions is electrically connected to the first and second bonding units, respectively; and the first and second extension portions face each other within the through-hole.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A light emitting device package according to an embodiment may include first and second frames, a body, a light emitting device, first and second conductive parts, and first and second conductors. According to the embodiment, first and second frames may be spaced apart from each other and include first and second openings, respectively. The body may be disposed between the first and second frames. The light emitting device may be disposed on the body and include first and second bonding parts. The first and second conductive parts may be disposed under the first and second bonding parts. The first and second conductors may be disposed in the first and second openings, respectively. According to the embodiment, the first and second conductive parts may extend into the first and second openings from the first and second bonding parts, respectively, and the first and second conductors may be disposed between the first and second conductive parts and the first and second frames, respectively.
A light emitting device package according to an embodiment may include: a first frame including a first opening passing through upper and lower surfaces, and a second frame spaced apart from the first frame and including a second opening; first and second conductive layers disposed in the first and second openings, respectively; a body disposed between the first and second frames; a first resin disposed on the body; and a light emitting device disposed on the first resin. According to an embodiment, the light emitting device may include a first bonding part electrically connected with the first frame and a second bonding part spaced apart from the first bonding part and electrically connected with the second frame, and the first and second bonding parts may be disposed on the first and second openings, respectively. According to an embodiment, the first and second frames may include first and second metal layers having third and fourth openings passing through upper and lower surfaces around the first and second openings, respectively, and widths of the first and second bonding parts in a horizontal direction may be greater than widths of upper surfaces of the first and second openings in the horizontal direction.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
36.
Light emitting device package and light source device
The light emitting device package disclosed in the embodiment includes a first frame having a first through hole; a second frame having a second through hole; a body disposed between the first and second frames; and light emitting devices disposed on the first and second frames, wherein the first and second through holes have an area of a lower surface larger than an area of the upper surface, and centers of the upper and lower surfaces of the first through hole may be offset from each other in the vertical direction, and centers of the upper and lower surfaces of the second through hole may be offset from each other in the vertical direction.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
37.
Light emitting device package and light source device
The light emitting device package disclosed in an embodiment of the invention includes first and second frames; a body disposed between the first and second frames; and a light emitting device disposed on the first and second frames, wherein the first frame includes a first end portion adjacent to the second frame, and the second frame includes a second end portion adjacent to the first frame and facing the first end portion, wherein the first end portion includes a first protruding portion protruding toward the second frame, and the second end portion includes a second protruding portion protruding toward the first frame. The light emitting device may include a first bonding portion disposed on the first protruding portion and a second bonding portion disposed on the second protruding portion.
A biometric data measurement device includes a light radiation unit configured to radiate green light having a full width at half maximum (FWHM) greater than or equal to 50 nm to a human body of a user; a light receiver configured to receive light reflected from or transmitted through the human body after being radiated from the light radiation unit; and a controller configured to calculate biometric data of the user using the received light wherein a lower wavelength limit of the FWHM is less than 500 nm, and an upper wavelength limit of the FWHM is greater than 520 nm.
A61B 1/00 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopesIlluminating arrangements therefor
Disclosed in an embodiment is a semiconductor device comprising: a substrate; a semiconductor structure including a first conductive semiconductor layer and a second conductive semiconductor layer, which are arranged on the substrate, an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and a recess formed in the second conductive semiconductor layer and the active layer; a first electrode arranged on the semiconductor structure and electrically connected with the first conductive semiconductor layer; a second electrode arranged on the semiconductor structure and electrically connected with the second conductive semiconductor layer; a first pad arranged on the first electrode; and a second pad arranged on the second electrode, wherein the recess separates the second conductive semiconductor layer and the active layer into an active region and an inactive region, the recess extends so as to encompass the active region, and the second pad extends to the top of the recess on the second electrode.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Disclosed in an embodiment is a light source comprising: a housing; a coupling unit which fixes the housing on the target structure; a light source module for emitting light onto the target structure; and a power source module which supplies power to the light source module. The light source module comprises: a first circuit board; a second circuit board disposed on one side of the first circuit board; a third circuit board disposed on another side of the first circuit board; at least one first ultraviolet light emitting element disposed on one surface of the first circuit board; at least one second ultraviolet light emitting element disposed on one surface of the second circuit board; and at least one third ultraviolet light emitting element disposed on one surface of the third circuit board, wherein one surface of the second circuit board and one surface of the third circuit are disposed so as to face each other.
An embodiment relates to a surface-emitting laser device and a light-emitting device including same. A surface-emitting laser device according to the embodiment can include: a first reflective layer; an active area disposed on the first reflective layer; an aperture area disposed on the active area; and a second reflective layer disposed on the aperture area. The second reflective layer can include: a first AlGaAs-based layer comprising Alx1Ga(1-x1)As (wherein 0
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses extending through the second conductive semiconductor layer and the active layer and arranged up to a partial region of the first conductive semiconductor layer; a plurality of first electrodes arranged inside the plurality of recesses and electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first conductive layer electrically connected to the plurality of first electrodes; a second conductive layer electrically connected to the second electrode; and an electrode pad electrically connected to the second conductive layer, wherein the electrode pad comprises a first electrode pad and a second electrode pad which are spaced apart from each other, and the area ratio of the electrode pad to the second conductive layer is 1:20 to 1:27.
An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to an embodiment may comprise: a substrate; a first reflective layer arranged on the substrate; an active layer arranged on the first reflective layer; an aperture layer arranged on the active layer and comprising an opening; a second reflective layer arranged on the active layer; a transparent electrode layer arranged on the second reflective layer; and a metal electrode layer arranged on the transparent electrode layer. The transparent electrode layer may comprise a first area perpendicularly overlapping the opening and multiple second areas extending from the first area. The multiple second areas may be arranged outside the opening along the circumferential direction of the opening and spaced apart from each other. The multiple second areas may be arranged and spaced apart from each other so as to correspond to the circumference of the opening. The metal electrode layer may electrically contact the second reflective layer between the multiple second areas.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening. The second bonding pad may be electrically connected to the second electrode through the second opening.
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
F21K 9/68 - Details of reflectors forming part of the light source
A semiconductor device can define a plurality of points on the basis of an In ion concentration, a first dopant concentration, and a second dopant concentration, and identify each layer on the basis of a region between the points defined as above. The Mg concentration in a specific layer may increase along a specific direction and then decrease.
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
In a surface emitting laser package, a surface emitting laser element and a substrate may be electrically connected through a diffusion part. In detail, according to the surface emitting laser package, a housing includes a step, the diffusion part is disposed at the step of the housing, and the surface emitting laser element and the substrate may be electrically connected through a connection wiring extending through the housing to correspond to the step and a conductive line disposed at one side of the diffusion part.
H01S 5/18 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Disclosed in an embodiment are a semiconductor device and a semiconductor device package including the same, the semiconductor device comprising: a semiconductor structure including a first light emitting unit and a second light emitting unit; a first electrode for electrically connecting a first conductive type semiconductor layer of the first light emitting unit with a first conductive type semiconductor layer of the second light emitting unit; and a second electrode for electrically connecting a second conductive type semiconductor layer of the first light emitting unit with a second conductive type semiconductor layer of the second light emitting unit, wherein: the first electrode includes a first pad arranged on the first light emitting unit, a first branch electrode arranged on the first light emitting unit, and a first extension electrode arranged on the second light emitting unit; the second electrode includes a second pad arranged on the second light emitting unit, a second branch electrode arranged on the second light emitting unit, and a second extension electrode arranged on the first light emitting unit; the semiconductor structure includes a first spacing section which extends in a first direction and comparts the first light emitting unit and the second light emitting unit; and the first pad and the second pad are not overlapped in the first direction and a second direction which is perpendicular to the first direction.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
49.
Semiconductor device, semiconductor device package and auto focusing device
A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
G03B 13/20 - Rangefinders coupled with focusing arrangements, e.g. adjustment of rangefinder automatically focusing camera
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01S 5/02212 - Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
An embodiment provides a semiconductor device comprising: a substrate; a semiconductor structure disposed on the substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an activation layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a bonding layer disposed between the semiconductor structure and the substrate; a cover layer disposed between the bonding layer and the semiconductor structure; and an electrode pad disposed on the cover layer and spaced apart from the semiconductor structure, wherein: the semiconductor structure further comprises a stepped portion at which the lateral surface of the second conductive semiconductor layer, the lateral surface of the activation layer, and the lower surface of the first conductive semiconductor layer are exposed; the stepped portion is disposed at the outer portion of the semiconductor structure; and the cover layer is disposed to extend from a region vertically overlapping the electrode pad to a region vertically overlapping a part of the exposed lower surface of the first conductive semiconductor layer.
The embodiment relates to a surface emitting laser device and a light emitting device including the same.
The surface-emitting laser device according to the embodiment includes a first reflective layer, an active region disposed on the first reflective layer, a plurality of aperture regions disposed on the active region, including an aperture and an insulating region, a second reflective layer disposed on the aperture region, and a first electrode and a second electrode electrically connected to the first reflective layer and the second reflective layer, respectively.
In the aperture region, an outer periphery of the insulating region may have a circular shape, and an outer periphery of the aperture may have a polygonal shape.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
The light emitting device package disclosed in the embodiment of the invention includes first and second frames; a body disposed between the first and second frames; and a light emitting devices disposed on the first and second frames. The first frame includes a first end portion adjacent to the second frame, and the second frame includes a second end portion adjacent to the first frame and facing the first end portion, the first end portion includes a first protrusion protruding toward the second frame, and the second end portion includes a second protrusion protruding toward the first frame. The light emitting device includes first and second bonding portions disposed on the first and second protrusions. The body includes first and second reflective portions extending toward both sides of the first protrusion toward the first frame, and third and fourth reflective portions extending toward both sides of the second protrusion toward the second frame. The light emitting device may overlap the first to fourth reflective portions in a vertical direction.
Disclosed in an embodiment are a semiconductor device and a light-emitting device package including same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged in a matrix shape in the central area of the substrate; passivation layers arranged on upper surfaces and lateral surfaces of the semiconductor structures and on the edge area of the substrate; a plurality of first wiring lines which are arranged at lower parts of the plurality of semiconductor structures and electrically connected thereto, and which include first end parts extending from the central area to the edge area of the substrate; a plurality of second wiring lines which are arranged at the lower parts of the plurality of semiconductor structures and electrically connected thereto, and which include second end parts extending from the central area to the edge area of the substrate; a plurality of first pads penetrating the passivation layer so as to be connected to the plurality of first end parts; and a plurality of second pads penetrating the passivation layers so as to be connected to the plurality of second end parts, wherein the plurality of semiconductor structures include a plurality of first semiconductor structures, which are arranged in a first area of the central area, and a plurality of second semiconductor structures, which are arranged in a second area of the central area, and the size of the plurality of first semiconductor structures differs from the size of the plurality of second semiconductor structures.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Disclosed in an embodiment is a semiconductor device package comprising a substrate and a plurality of semiconductor structures arranged to be spaced apart at the center of the substrate, wherein the semiconductor structure is arranged on the substrate and includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and the ratio of the maximum height of the outermost surface of the first conductive type semiconductor layer to the length of the spacing distance between the adjacent semiconductor structures is 1:3 to 1:60.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
Disclosed in an embodiment is a semiconductor device comprising: a semiconductor structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second electrode electrically connected to the second conductive type semiconductor layer; and a reflective layer disposed under the second electrode, wherein the second conductive type semiconductor layer comprises a first sub-layer and a second sub-layer disposed between the first sub-layer and the active layer and having an aluminum (Al) composition higher than that of the first sub-layer, the reflective layer comes into contact with the lower surface of the second sub-layer, and the second electrode comes into contact with the first sub-layer.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
56.
Surface-emitting laser device and light emitting device including the same
A surface-emitting laser device according to an embodiment comprises: a first electrode; a substrate arranged on the first electrode; a first reflection layer arranged on the substrate; an active region arranged on the first reflection layer and including a cavity; an opening region arranged on the active region and including an aperture and an insulation region; a second reflection layer arranged on the opening region; a second electrode arranged on the second reflection layer; and a delta doping layer arranged in the opening region. The thickness of the insulation region becomes thinner in the direction of the aperture, and the delta doping layer can be arranged at the aperture.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
This surface-emitting laser device comprises: a first reflective layer; an active region disposed over the first reflective layer; an aperture region which is disposed over the active region and comprises an aperture and an insulating region; a second reflective layer disposed over the aperture region; and a second electrode electrically connected to the second reflective layer. The second electrode comprises first to sixth conductive layers. The first conductive layer may comprises Ti, and the sixth conductive layer may comprise Au.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
An embodiment discloses a semiconductor device package comprising: a body including a cavity; a semiconductor device disposed in the cavity; a light transmitting member disposed in the cavity; and an adhesive layer for fixing the light transmitting member to the body, wherein the semiconductor device generates light in an ultraviolet wavelength band, and the adhesive layer comprises polymer resin and wavelength conversion particles which absorb the light in the ultraviolet wavelength band and generate light in a visible wavelength band.
Embodiments relate to a light emitting device package and a light source device. A light emitting device package according to the embodiment may include a first package body; a second package body disposed on the first package body, and comprising an opening passing through an upper surface and a lower surface of the second package body; and a light emitting device disposed in the opening, and comprising a first bonding part and a second bonding part. The first package body may include a first opening and a second opening that pass through an upper surface and a lower surface of the first package body. The upper surface of the first package body may be coupled with the lower surface of the second package body, the first bonding part may be disposed on the first opening, and the second bonding part may be disposed on the second opening.
A light emitting device package according to an embodiment may comprise: a first package body including a first and a second opening; a light emitting device disposed on the first package body and including a first and a second bonding part; and a first resin disposed between the first package body and the light emitting device. The light emitting device may comprise one surface on which the first and second bonding parts are disposed, the first bonding part may comprise a first side surface and a lower surface facing the first package body, and the second bonding part may comprise a second side surface opposite to the first side surface, and a lower surface facing the first package body. The first resin may comprise an upper surface disposed on the one surface of the light emitting device, a third side surface extending from the upper surface to the lower surface of the first bonding part along the first side surface of the first bonding part, and a fourth side surface extending from the upper surface to the lower surface of the second bonding part along the second side surface of the second bonding part.
One embodiment comprises: a semiconductor substrate; a pattern layer disposed on the semiconductor substrate and comprising a plurality of patterns that are spaced apart from each other; a nitride semiconductor layer disposed on the pattern layer; and a semiconductor substrate disposed on the nitride semiconductor layer and comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the thermal conductivity of the pattern layer is higher than the thermal conductivity of the semiconductor substrate and the thermal conductivity of the semiconductor structure.
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
62.
Light source module and ultraviolet ray irradiating apparatus including the same
An embodiment discloses a light source module including: a fixing plate configured to extend in a first direction; a circuit board disposed on the fixing plate; a plurality of ultraviolet light emitting elements disposed on the circuit board in the first direction; a first reflection plate coupled to one side of the fixing plate; and a second reflection plate coupled to the other side of the fixing plate, wherein the first reflection plate and the second reflection plate include inclined surfaces which become closer to each other as the distance from the circuit board increases and the inclined surface of the first reflection plate and the inclined surface of the second reflection plate are disposed to be spaced apart in the first direction and disposed on a side surface of a target structure, and an ultraviolet ray irradiating apparatus including the same.
Disclosed is a semiconductor device package comprising: first insulation layers disposed between first wiring lines and second wiring lines; a plurality of first pads electrically connected to the first wiring lines, respectively; and a plurality of second pads electrically connected to the second wiring lines, respectively, wherein the line having the longest length extended in a first direction, among the plurality of first wiring lines, has an area of a region, which is overlapped with an electrically connected semiconductor structure, that is larger than that of the line having the shortest extended length.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
64.
Light emitting device package and light source device
The light emitting device package disclosed in the embodiment includes first and second frames spaced apart from each other; a body disposed between the first and second frames; a light emitting device including a first bonding portion and a second bonding portion on a lower portion thereof; and a first resin disposed between the body and the light emitting device, wherein the first frame includes a first protruding portion facing the first bonding portion of the light emitting device, and the second frame includes a second protruding portion facing the second bonding portion of the light emitting device, and including a first conductive layer between the first bonding portion and the first protruding portion and a second conductive layer between the second bonding portion and the second protruding portion.
An embodiment provides a lighting device comprising: a body having a first opening at a central part thereof; a light source member, which is disposed on the body and includes a circuit board having a plurality of light-emitting elements arranged thereon; and a cover disposed on the light source member and coupled to the body, wherein the circuit board comprises at least one second opening vertically overlapping the first opening and at least one first protrusion protruding toward the inside of the second opening from a side surface of the second opening, and at least one of the light-emitting elements is mounted on the first protrusion.
F21K 9/20 - Light sources comprising attachment means
H05B 47/19 - Controlling the light source by remote control via wireless transmission
F21V 19/00 - Fastening of light sources or lamp holders
F21V 23/00 - Arrangement of electric circuit elements in or on lighting devices
F21V 23/04 - Arrangement of electric circuit elements in or on lighting devices the elements being switches
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
F21Y 105/18 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array annularPlanar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array polygonal other than square or rectangular, e.g. for spotlights or for generating an axially symmetrical light beam
An embodiment discloses a semiconductor device package, comprising: a body including a cavity; a plurality of electrodes disposed inside the body; a semiconductor device disposed in the cavity of the body; and a transparent member disposed on the cavity, wherein the body comprises: a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface facing each other; a first corner area formed by the first side surface and the third side surface; a second corner area formed by the first side surface and the fourth side surface; a third corner area formed by the second side surface and the fourth side surface; and a fourth corner area formed by the second side surface and the third side surface, and wherein the plurality of electrodes comprises a first electrode on which the semiconductor device is disposed, wherein the first electrode comprises: a fifth side surface and a sixth side surface facing each other; a seventh side surface connecting the fifth side surface and the sixth side surface; a fifth corner area formed by the fifth side surface and the seventh side surface; and a sixth corner area formed by the sixth side surface and the seventh side surface, wherein the fifth corner area is disposed between the second corner area and the third corner area, and the sixth corner area is disposed between the third corner area and the fourth corner area.
A light emitting device package disclosed in an embodiment of the invention includes a substrate including first and second frames; a light emitting device including a first bonding portion facing the first frame and a second bonding portion facing the second frame; a phosphor layer on the light emitting device; a first resin disposed around the upper surface of the substrate and the light emitting device; a second resin between the first resin and side surfaces of the light emitting device; and an adhesive layer between the phosphor layer and the light emitting device, wherein the adhesive layer includes a thickness thinner than a thickness of the phosphor layer, and the first resin comprises a reflective resin material and is disposed on the side surface of the phosphor layer. The second resin may include a transparent resin material, and the second resin may include a curved surface with an outer surface facing the first resin.
The light emitting device package disclosed in the embodiment includes a package body including first and second frames, and a first body disposed between the first and second frames; a second body disposed on the package body and including a cavity and a sub-cavity spaced apart from the cavity; a light emitting device disposed in the cavity and including first and second bonding portions; and a protection device disposed in the sub-cavity, wherein the package body and the second body may be coupled to an adhesive member.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
F21K 9/00 - Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
Disclosed in an embodiment is a semiconductor device comprising a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein: the first conductive semiconductor layer comprises a first super lattice layer comprising a plurality of first sub layers and a plurality of second sub layers, the first and second sub layers being alternately arranged; the semiconductor structure emits ions of indium, aluminum, and a first and second dopant during a primary ion irradiation; the intensity of indium ions emitted from the active layer includes a maximum indium intensity peak; the doping concentration of the first dopant emitted from the first conductive semiconductor layer includes a maximum concentration peak; the maximum indium intensity peak is disposed to be spaced from the maximum concentration peak in a first direction; the intensity of indium ions emitted from the plurality of first sub layers has a plurality of first indium intensity peaks; the doping concentration of the first dopant emitted from the plurality of first sub layers has a plurality of first concentration peaks; and the plurality of first indium intensity peaks and the plurality of first concentration peaks are disposed between the maximum indium intensity peak and the maximum concentration peak.
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
A semiconductor device package includes a light emitting device disposed on a body, and at least one resin disposed between the body and the light emitting device. The body may include first and second opening parts passing through the body from the upper surface of the body, and at least one recess concavely provided from the upper surface of the body towards the lower surface of the body. The light emitting device may include a first bonding part disposed on the first opening part, and a second bonding part disposed on the second opening part. The at least one recess may be disposed between the first and second opening parts, and along the circumferences of the first and second opening parts. The at least one resin may be provided to the at least one recess. The at least one resin may include a reflective material.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the semiconductor structure includes a third conductive semiconductor layer disposed between the second conductive semiconductor layer and the second electrode, the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant, and the concentration ratio between the first dopant and the second dopant included in the third conductive semiconductor layer ranges from 0.01:1.0 to 0.8:1.0.
The light emitting device package disclosed in the embodiment includes first and second frames spaced apart from each other; a body disposed between the first and second frames; a light emitting device disposed on the first and second frames; a first resin disposed between the body and the light emitting device, wherein each of the first and second frames includes a through hole, the through hole overlaps the light emitting device in a vertical direction, and the body includes a recess recessed toward a lower surface of the body between the first and second frames, and the recess overlaps the light emitting device in the vertical direction, the first resin is disposed in the recess, and a length of the recess is smaller than a width of the light emitting device.
H01L 33/54 - Encapsulations having a particular shape
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A light emitting device package can include a package body; a light emitting device disposed on the package body and including first and second electrode pads on a bottom surface of the light emitting device; a first through hole in the package body; a second through hole in the package body, in which the first through hole is separated from the second through hole, the first electrode pad of the light emitting device directly overlaps with the first through hole in the package body, and the second electrode pad of the light emitting device directly overlaps with the second through hole in the package body.
An embodiment relates to an ultraviolet light-emitting device, a method for manufacturing the ultraviolet light-emitting element, a light-emitting element package, and a lighting device. An ultraviolet light-emitting element according to an embodiment includes: a first conductive type first semiconductor layer having a light extraction structure; an etching-blocking layer on the first conductive type first semiconductor layer; a first conductive type second semiconductor layer on the etching-blocking layer, an active layer on the first conductive type second semiconductor layer; a second conductive type semiconductor layer on the active layer; and an electron spreading layer disposed between the etching-blocking layer and the active layer, wherein the electron spreading layer includes a first conductive type or an undoped AlGaN-based or a GaN-based semiconductor layer, an undoped AlN, and a first conductive type AlGaN-based second semiconductor layer.
Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 μm to 40 μm and the thickness of the wavelength conversion layer is 1 μm to 50 μm.
F21S 41/153 - Light emitting diodes [LED] arranged in one or more lines arranged in a matrix
F21S 41/19 - Attachment of light sources or lamp holders
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
A light emitting device package according to an embodiment may include a first package body including first and second openings passing through the upper surface and lower surface thereof; a second package body disposed on the first package body and including a third opening passing through the upper surface and lower surface thereof; a light emitting device disposed in the third opening; a first resin disposed between the upper surface of the first package body and the light emitting device; and a second resin disposed in the third opening. According to the embodiment, the upper surface of the first package body may be coupled to the lower surface of the second package body, the first package body may include a recess recessed from the upper surface of the first package body to the lower surface of the first package body, the first resin may be disposed in the recess, the first resin and the second resin include materials different from each other, and the first resin may be in contact with the light emitting device and the second resin.
A surface-emitting laser package comprises: a substrate; a surface-emitting laser device disposed on the substrate, and having a non-emitting area and an emitting area which includes a plurality of emitters each generating a first laser beam; a housing disposed around the surface-emitting laser device; and a diffusing part disposed on the surface-emitting laser device. The emitting area has a first width in a first direction and a second width in a second direction perpendicular to the first direction, and the second width may be greater than the first width. The diffusing part outputs the first laser beam into a second laser beam having a first angle of view in the first direction and a second angle of view in the second direction, and the first angle of view may be greater than the second angle of view.
A light emitting device package according to an embodiment has a first frame and a second frame arranged to be spaced apart from each other, a third frame arranged between the first frame and the second frame and spaced apart from the first frame and the second frame, a body supporting the first to third frames, a first light emitting device arranged on the body and electrically connected to the first frame and the third frame, and a second light emitting device arranged on the body and electrically connected to the second frame and the third frame. The body has a first recess in an upper area between the first frame and the third frame, and a second recess in an upper area between the third frame and the second frame. An embodiment may have a first resin part arranged in the first recess, and a second resin part arranged in the second recess. The first light emitting device has a first bonding portion and a second bonding portion, and may be arranged on the first resin part and electrically connected to the first frame and the third frame. The second light emitting device has a third bonding portion and a fourth bonding portion, and may be arranged on the second resin part and electrically connected to the second frame and the third frame.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
79.
Semiconductor device and semiconductor device package having an electrode recess with a different inclination angle than an inclination angle of an electrode in the recess
A semiconductor device according to an embodiment may include: a light emitting structure; a light transmitting electrode layer disposed on the light emitting structure; and a reflective layer disposed on the light transmitting electrode layer and including a plurality of first openings and a plurality of second openings. The semiconductor device according to the embodiment may include: a first electrode in contact with a first conductivity type semiconductor layer of the light emitting structure; and a second electrode in contact with the light transmitting electrode layer through the plurality of first openings. The first electrode may include a first sub-electrode and a plurality of first branch electrodes, wherein the plurality of first branch electrodes are arranged extending toward the second electrode from the first sub-electrode; the second electrode may include a second sub-electrode and a plurality of second branch electrodes, wherein the plurality of second branch electrodes are arranged extending toward the first electrode from the second sub-electrode; and the plurality of first branch electrodes and the plurality of second branch electrodes may be alternately disposed on an upper surface of the reflective layer.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
A laser diode according to an embodiment may include a substrate, a plurality of light emitting structures disposed on the substrate and including a first reflective layer and a second reflective layer, a first electrode electrically connected with the first reflective layer of the light emitting structure, a second electrode electrically connected with the second reflective layer of the light emitting structure, a first insulating layer disposed on the first electrode, a first bonding pad electrically connected with the first electrode and disposed on the substrate, and a second bonding pad electrically connected with the second electrode and disposed on the substrate.
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
81.
Semiconductor device package and light source device
A semiconductor device package provided in an embodiment comprises: first and second frames spaced apart from each other; a body disposed between the first and second frames; and a semiconductor device disposed on the first and the second frame and comprising a semiconductor layer and a first and a second electrode on the semiconductor layer, wherein the first and the second frame comprise a first metal layer having a plurality of pores, and the first metal layer of the first and the second frame may comprise coupling portions in regions where the first metal layer overlaps the first and the second electrode, respectively.
An embodiment discloses a semiconductor device comprising: a semiconductor structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a 2-1 electrode disposed on the second conductive semiconductor layer; and a 2-2 electrode disposed on the second conductive semiconductor layer and spaced apart from the 2-1 electrode, wherein the thickness of a part of the second conductive semiconductor layer between the 2-1 electrode and the 2-2 electrode is smaller than the thickness of the second conductive semiconductor layer vertically overlapping with the 2-1 electrode and the 2-2 electrode; the 2-2 electrode is opposite to the 2-1 electrode and comprises a first region that is closest to the 2-1 electrode; the 2-1 electrode is opposite to the 2-2 electrode and comprises a second region that is closest to the 2-2 electrode; and the relationship between the width (W1) of the first region and the width (W2) of the second region is W1≥W2.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
G08C 23/04 - Non-electric signal transmission systems, e.g. optical systems using light waves, e.g. infrared
An optical module disclosed in an embodiment includes: a body including a recess recessed at a predetermined depth from an upper surface thereof and a side surface having an outwardly concave curved surface at a periphery of the recess; a light emitting module having a light emitting diode at a lower portion of the recess of the body; and an optical lens including an incidence portion disposed on the body and a lens portion having an aspherical shape on the incidence portion, and wherein an upper portion of the recess has a maximum first diameter, a lower portion of the lens portion has a maximum second diameter, and the second diameter is smaller than the first diameter.
Semiconductor device having a first pad not overlapping first connection electrodes and a second pad not overlapping second connection electrodes in a thickness direction
An embodiment provides a semiconductor device including a light-emitting structure including a plurality of light-emitting portions disposed at a side and a plurality of second light-emitting portions disposed at another side, a plurality of first connection electrodes configured to electrically connect the plurality of first light-emitting portions, a plurality of second connection electrodes configured to electrically connect the plurality of second light-emitting portions, a first pad disposed on the plurality of first light-emitting portions, and a second pad disposed on the plurality of second light-emitting portions. The first pad includes a plurality of 1-2 pads extending toward the second pad. The second pad includes a plurality of 2-2 pads extending toward the first pad. The first connection electrode includes a region between the plurality of 1-2 pads in a thickness direction of the light-emitting structure. The second connection electrode includes a region between the plurality of 2-2 pads in the thickness direction of the light-emitting structure.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Embodiments relate to a semiconductor device, an optical transmission module, and an optical transmission apparatus. An optical transmission module according to an embodiment includes a board; a submount disposed on a first surface of the board; a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a first surface of the submount; and a module housing including a coupling unit and a body, the coupling unit spaced apart from the vertical cavity surface emitting laser (VCSEL) semiconductor device and facing the first surface of the submount, the body extending from the coupling unit toward the first surface of the board and disposed around the submount and the vertical cavity surface emitting laser (VCSEL) semiconductor device.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
A semiconductor device disclosed in an embodiment comprises: a light emitting unit comprising a light emitting structure layer which has a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a sensor unit disposed on the light emitting unit, wherein the sensor unit comprises: a sensing material changing in resistance with light emitted by the light emitting unit; a first sensor electrode comprising a first pad portion and a first extension part extending from the first pad portion and contacting the sensing material; and a second sensor electrode comprising a first pad portion and a second extension part extending toward the first extension part from the second pad portion and contacting the sensing material. The sensor unit senses an external gas in response to the light generated from the light emitting unit.
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
G01N 17/00 - Investigating resistance of materials to the weather, to corrosion or to light
G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated
G01N 21/33 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
An embodiment provides a semiconductor element, which comprises: a plurality of semiconductor structures, each of which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess extending through the second conductive semiconductor layer and the active layer to a partial area of the first conductive semiconductor layer; a second recess disposed between the plurality of semiconductor structures; a first electrode disposed at the first recess and electrically connected to the first conductive semiconductor layer; a reflective layer disposed under the second conductive semiconductor layer; and a protrusion part disposed on the second recess and protruding higher than the upper surfaces of the semiconductor structures, wherein a surface, on which the first electrode contacts the first conductive semiconductor layer in the first recess, is 300 to 500 nm distant from the upper surfaces of the semiconductor structures.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
88.
Light emitting device package and light source unit
A light emitting device package disclosed to an embodiment of the invention includes a body including an upper surface and a lower surface, the body including a first recess and a second recess concaved from the lower surface toward the upper surface; a light emitting device disposed on the body and including a first bonding portion and a second bonding portion; and first and second conductive portions respectively disposed in the first recess and the second recess, wherein the body includes a first through hole and a second through hole penetrating an upper surface of each of the first recess and the second recess and the upper surface of the body, and wherein each of the first and second conductive portions extends into the first and second through holes and is electrically connected to the first bonding portion and the second bonding portion, respectively.
Disclosed in an embodiment is a semiconductor device including a light-emitting structure which includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a recess passing through the second conductive semiconductor layer, the active layer, and a portion of the first conductive semiconductor layer, a conductive layer electrically connected to the second conductive semiconductor layer, and a bonding pad disposed to be spaced apart from the light-emitting structure, wherein the active layer is divided into an inactive region and an active region by the recess, the conductive layer is electrically connected to the active region, and the conductive layer includes a stepped portion overlapping the recess in a vertical direction.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/26 - Materials of the light emitting region
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
90.
Semiconductor device and semiconductor device package comprising same
Disclosed in an embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a reflective layer disposed on the second electrode and including a first metal; and a nitride of the first metal between the second electrode and the reflective layer.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A light source unit disclosed in an embodiment of the invention includes: a first cover having an open region at an upper portion and a recess in which a lower portion is opened; a second cover coupled to the lower portion of the first cover; a light source module disposed between the first and second covers and having a circuit board and a light emitting device on the circuit board; a waterproof film disposed on the light emitting device and facing an upper surface of the circuit board; and first and second gaskets on the upper surface of the circuit board. The first cover and the second cover are coupled to each other by protrusions and grooves and are bonded to each other by a bonding portion.
F21V 31/00 - Gas-tight or water-tight arrangements
F21V 15/01 - Housings, e.g. material or assembling of housing parts
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
F21V 19/00 - Fastening of light sources or lamp holders
Embodiments pertain to a semiconductor device package, a method of manufacturing the semiconductor device package, and an autofocusing apparatus including the semiconductor device package. The semiconductor device package according to an embodiment may include: a package body; a diffusion unit; and a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a support and under the diffusion unit. According to the embodiment, the package body may include the support, a first sidewall protruding to a first thickness from an edge region of an upper surface of the support and having a first upper surface of a first width, and a second sidewall protruding to a second thickness from the first upper surface of the first side wall and having a second upper surface of a second width, wherein the support, the first sidewall, and the second sidewall may be integrally formed with the same material. The diffusion unit may be disposed on the first upper surface of the first sidewall and may be disposed to be surrounded by the second sidewall.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
93.
Light-emitting semiconductor device having flat portion and concave-convex portion for enhanced light extraction efficiency
A semiconductor device according to the present invention comprises: a conductive substrate; a semiconductor structure disposed on the conductive substrate and comprising a first conductive-type semiconductor layer, a second conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; and a first electrode disposed on the semiconductor structure and electrically connected to the first conductive-type semiconductor layer, wherein the semiconductor structure further comprises a 1-1 conductive-type semiconductor layer between the first conductive-type semiconductor layer and the first electrode; and the top surface of the semiconductor structure comprises a flat part, on which the first electrode is disposed, and a concave-convex part surrounding the flat part, wherein a second distance, which is from the bottom surface of the semiconductor structure to the bottom surface of the concave-convex part contacting a side surface of the flat part, may be between 70% or more and 95% or less with respect to a first distance, which is from the bottom surface of the semiconductor structure to the top surface of the 1-1 conductive-type semiconductor layer. The present invention may enhance light flux by improving the current spreading phenomenon of the semiconductor device.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
94.
Semiconductor device and semiconductor device package including same
Disclosed is in the embodiment is a semiconductor device comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer disposed between the second conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer includes a first sub semiconductor layer, a third sub semiconductor layer and a second sub semiconductor layer disposed between the first sub semiconductor layer and the third sub semiconductor layer, wherein proportion of aluminum in the first sub semiconductor layer and the third sub semiconductor layer is larger than an proportion of aluminum in the active layer, and an proportion of aluminum in the second sub semiconductor layer is smaller than the proportion of aluminum in the first sub semiconductor layer and the third sub semiconductor layer, wherein the second conductive semiconductor layer includes a current injection layer of which proportion of aluminum decreases as a distance from the active layer increases, the first electrode is disposed on the second sub semiconductor layer, the second electrode is disposed on the current injection layer, and the ratio of the average value of the proportion of aluminum in the second sub semiconductor layer to the average value of the proportion of aluminum in the current injection layer is 1:0.12 to 1:1.6.
H01L 33/26 - Materials of the light emitting region
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
95.
Light emitting device including a passivation layer on a light emitting structure
The embodiments of the present invention relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device. A light emitting device according to an embodiment has: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer disposed on the light emitting structure; and an insulating reflective layer disposed on the passivation layer. The passivation layer may include a first region disposed on an upper surface of the light emitting structure, and a second region disposed on side surfaces of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer. The insulating reflective layer may be disposed on the first region, and an end portion of the insulating reflective layer may be disposed apart from an end portion of the first region.
F21K 9/00 - Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer. The first electrode may be electrically connected to the first DBR layer and the third DBR layer, and disposed between the first light emitting structure and the second light emitting structure. The second electrode may be electrically connected to the second DBR layer and the fourth DBR layer, and disposed on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
97.
Light emitting device and method of manufacturing the same
Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/54 - Encapsulations having a particular shape
A light emitting device includes a substrate; a light emitting structure disposed on the substrate; a first insulation layer disposed on the light emitting structure; a second insulation layer disposed on the first insulation layer; a first electrode and a second electrode electrically connected to the light emitting structure; a first pad electrically connected to the first electrode; and a second pad electrically connected to the second electrode.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Disclosed herein is a semiconductor device package including: a body including a cavity; a semiconductor device disposed in the cavity; a light transmitting member disposed on the cavity; and an adhesive layer which fixes the light transmitting member to the body, wherein the cavity includes a stepped portion on which the light transmitting member is disposed, the stepped portion includes a first bottom surface and a third bottom surface spaced apart from each other in a first direction, a second bottom surface and a fourth bottom surface spaced apart from each other in a second direction perpendicular to the first direction, a first connecting portion in which the first bottom surface and the second bottom surface are connected to each other, a second connecting portion in which the second bottom surface and the third bottom surface are connected to each other, a third connecting portion in which the third bottom surface and the fourth bottom surface are connected to each other, and a fourth connecting portion in which the fourth bottom surface and the first bottom surface are connected to each other, the adhesive layer includes a first edge portion, a second edge portion, a third edge portion, and a fourth edge portion respectively—disposed on the first to fourth connecting portions and a first extending portion disposed between the first edge portion and the second edge portion, and the first extending portion has a width which is decreased in a direction toward a center between the first edge portion and the second edge portion.
patents
