A color and infrared image sensor includes: a first level having infrared photodetectors formed therein; a second level, located above the first level, having visible photodetectors formed therein, which are laterally offset with respect to the infrared photodetectors; and a layer of microlenses comprising a specific microlens in front of each infrared photodetector.
H10K 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
An electronic device includes a fingerprint sensor adapted to simultaneously acquiring fingerprints of a plurality of fingers, preferably from two to four fingers.
An electronic device adapted to executing at least one application, includes an access control, wherein a number of authentication means implemented by the access control is settable according to a security level assigned to the application.
01 - Chemical and biological materials for industrial, scientific and agricultural use
02 - Paints, varnishes, lacquers
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Solvents for manufacturing and used in the manufacture of
opto-electronic organic components, active organic photo
components and photovoltaic organic apparatus; salts for
industrial use, particularly conductive molecular salts;
chemical polymer compositions for printed organic
electronics; chemicals for manufacture and used in the
manufacture of opto-electronic organic components, active
organic photo components and photovoltaic organic apparatus;
chemicals for the manufacture of conductive, semi-conductive
and dielectric inks; chemical additives for the manufacture
of conductive, semi-conductive and dielectric inks; chemical
additives for controlling the consistency of conductive,
semi-conductive and dielectric inks; all the aforesaid goods
being particularly for the manufacture of automated access
control apparatus and instruments, apparatus and instruments
for identifying fingerprints or palm prints, apparatus and
instruments for visual or eye identification, computer
screens, smartphones, tablets and reading lights, biometric
readers particularly for fingerprints or palm prints,
optical readers, chip card readers, integrated circuit card
readers, biometric recognition devices, particularly for
fingerprints or palm prints, spatial recognition devices,
particularly remote sensing and telemetry apparatus using
the LIDAR system, biometric terminals, integrated circuit
cards, organic light-emitting diodes (OLEDs), organic
photodiodes, optical filters, particularly for plasma
screens and display panels, sensors, particularly
electro-optical sensors for image acquisition of finger or
palm prints or document images, biochip sensors for finger
or palm print image acquisition, electronic controllers,
touch screen sensor, telecommunications apparatus and the
Internet of things (IoT), door opening and closing sensors,
integrated circuits, integrated circuits for readers of
fingerprint or palm print sensors or contact deposited
documents, printed flexible electronic circuits, integrated
circuit modules, protective glass covers for computer,
smartphone, tablet and e-reader displays, dimmers, facial or
eye recognition devices, spatial recognition and
visualization devices, augmented reality (AR) or virtual
reality (VR) devices and being particularly used in
identifying persons based on biometric data and/or documents
in the fields of transport, public or private access and
security control, electronic voting, health, banking
transactions, home automation, communications, for 3D
spatial measurement or recognition or for applications in
the field of logistics, user interfaces, non-destructive
testing, energy, consumer electronics, automobiles, medical
analysis and imaging; chemical products for use in industry
and science. Conductive inks, semi-conductive inks, dielectric inks;
thinners and thickeners for conductive, semi-conductive and
dielectric inks; powdered inks in the nature of colorants;
all the aforesaid goods being particularly intended for the
manufacture of automated access control apparatus and
instruments, apparatus and instruments for identifying
finger or palm prints, apparatus and instruments for visual
or eye identification, computer screens, smartphones,
tablets and reading lights, biometric readers particularly
for finger or palm prints, optical readers, chip card
readers, integrated circuit card readers, biometric
recognition devices, particularly for finger or palm prints,
spatial recognition devices, particularly remote sensing and
telemetry apparatus using the LIDAR system, biometric
terminals, integrated circuit cards, organic light-emitting
diodes (OLEDs), organic photodiodes, optical filters,
particularly for plasma screens and display panels, sensors,
particularly electro-optical sensors for image acquisition
of finger or palm prints or document images, biochip sensors
for fingerprint or palmprint image acquisition, electronic
controllers, touch screen sensor, telecommunications
apparatus and the Internet of things (IoT), door opening and
closing sensors, integrated circuits, integrated circuits
for readers of fingerprint or palm print sensors or contact
deposited documents, printed flexible electronic circuits,
integrated circuit modules, protective glass covers for
computer, smartphone, tablet and e-reader displays, dimmers,
facial or eye recognition devices, spatial recognition and
visualization devices, augmented reality (AR) or virtual
reality (VR) devices and being particularly used in
identifying persons based on biometric data and/or documents
in the fields of transport, public or private access and
security control, electronic voting, health, banking
transactions, home automation, communications, for 3D
spatial measurement or recognition or for applications in
the field of logistics, user interfaces, non-destructive
testing, energy, consumer electronics, automobiles, medical
analysis and imaging; dry inks; thinners and thickeners for
inks. Automated access control apparatus and instruments;
apparatus and instruments for identifying finger or palm
prints; apparatus and instruments for visual or eye
identification; screens for computers, smartphones, tablets,
e-book readers; biometric readers, particularly of finger or
palm prints; optical readers; chip card readers; integrated
circuit card readers; biometric recognition devices,
particularly of finger or palm prints; spatial recognition
devices, particularly remote sensing and telemetry apparatus
using the LIDAR system; software and software applications
for the issuance, display, recognition, memorization and
secure transmission of biometric data, particularly finger
or palm prints; software and software applications, for
authentication, access control, particularly to computers
and computer networks; software for biometric data readers;
software for spatial data readers; software for facial data
readers; encryption software; biometric terminals;
integrated circuit cards; organic light-emitting diodes
(OLED); organic photodiodes; optical filters, particularly
for plasma screens and display panels; sensors, particularly
electro-optical sensors for the image acquisition of finger
or palm prints or document images; finger or palm print
image acquisition biochip sensors; electronic controllers;
sensors for touch screens, telecommunications apparatus, the
Internet of things (IoT); sensors for opening and closing
doors; integrated circuits; integrated circuits for reading
finger or palm print sensors or contact deposited documents;
printed flexible electronic circuits; integrated circuit
modules; protective glass for computer, smartphone, tablet,
e-book reader screens; light dimmers; facial or eye
recognition devices; devices for the recognition and
visualization of the spatial environment; augmented reality
(AR) or virtual reality (VR) devices; all the aforesaid
goods being in particular used for identifying persons based
on biometric data and/or documents in the fields of
transport, public or private access control and security,
electronic voting, health, banking transactions, home
automation, communications, for 3D spatial measurement or
recognition or for applications in the field of logistics,
user interfaces, non-destructive testing, energy, consumer
electronics, automobiles, medical analysis and imaging;
scientific, navigation, optical, measuring, detecting,
inspecting apparatus and instruments; apparatus and
instruments for image or data recording, transmission,
reproduction or processing. Research and development, engineering, information, advice,
expert report and audit services in the field of
electronics, particularly printed organic and optoelectronic
organic components, optical filters as well as processes for
printed organic or optical filters; research and
development, engineering, information, advice, expert report
and audit services in the field of chemicals for the
manufacture of optoelectronic organic components, active
photo organic components and photovoltaic organic apparatus
or conductive, semi-conductive and dielectric inks; research
and development, engineering, information, advice, expert
report and audit services in the field of conductive inks,
semi-conductive inks and dielectric inks; designing
integrated circuits and printed flexible electronic
circuits; design, development, updating and maintenance of
software and mobile applications for recognition and
interpretation of finger, palm prints, facial features or
other biometric characteristics; design, development,
updating and maintenance of software and mobile applications
for the recognition and interpretation of the spatial
environment used with the LIDAR system or in augmented or
virtual reality; providing software for authenticating
access control, particularly to computers and computer
networks; design, development, updating and maintenance of
software for the operation and management of integrated
circuit components; all the aforesaid services being
particularly intended for apparatus enabling the
identification of persons based on biometric data and/or
documents in the fields of transport, public or private
access control and security, electronic voting, health,
banking transactions, home automation, communications,
apparatus enabling 3D spatial measurement or recognition or
apparatus having applications in the field of logistics,
user interfaces, non-destructive testing, energy, consumer
electronics, automobiles, medical analysis and imaging;
Scientific and technological services as well as research
and design services relating thereto; industrial research
services; design and development of software.
The present invention relates to an imaging device comprising a non-polarising display screen (1, 2), an organic infrared image sensor (5) under the display screen and a semi-opaque layer having a visible light transmittance of less than 10% and an infrared light transmittance greater than 1% between the respective active layers of the screen and the sensor.
G06F 3/00 - Input arrangements for transferring data to be processed into a form capable of being handled by the computerOutput arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
An angular filter includes an array of microlenses, a first array of openings in a layer of a first resin and a second array of openings in a layer of a second resin. The first resin blocks at least a first radiation and the second resin blocks a second radiation, different from the first radiation.
An angular filter for an image acquisition device including a stack includes: a layer with mediums having different refraction indexes and transparent to the radiation, the layer only letting through rays of the radiation having incidences smaller than a first maximum incidence; and an array of openings delimited by walls opaque to a visible and/or infrared radiation and an array of microlenses. The assembly formed by the array of openings and the array of microlenses only lets through rays having incidences smaller than a second maximum incidence smaller than the first maximum incidence.
An angular filter for an image acquisition device including a stack, includes: a first array of first openings delimited by first walls opaque to a visible and/or infrared radiation; an array of microlenses; and a second array of second openings delimited by second walls opaque to the visible and/or infrared radiation.
An optical angular filter includes a network of pillars made of a first transparent material, and an array of walls made of a second opaque material, separating the pillars from one another. The refraction index of the second material is different from that of the first material.
The present description relates to an optical filter intended to cover an array of photodetectors, the optical filter comprising a plurality of identical elementary filter patterns (41) distributed regularly across the surface of the optical filter, each filter pattern (41) comprising an arrangement of at least two adjoining colour filters (43, 43v, 43ir, 43r, 43b, 43g), two adjacent elementary filter patterns (41) being spaced apart by the dimension of at least two photodetectors.
The present description relates to a fingerprint acquisition device comprising an image sensor, including a matrix of organic photodetectors, and a processing circuit, the device being configured to implement the following steps: a) capturing (201, 203, 205), by means of the image sensor, a first image of at least one finger of a user with first acquisition parameters; b) determining (209), by means of the processing circuit, an indicator relating to the first image; and c) after step a) and before the end of step b), initiating (251, 253, 255) the capture, by means of the image sensor, of a second image of said at least one finger of the user with second acquisition parameters.
An image acquisition device includes a single sensor having organic photodetectors, an angular filter, and a color filter. The color filter has one or a plurality of first portions adapted to give way to at least one wavelength in the visible range, and one or a plurality of second portions filtering wavelengths outside of red and/or near infrared. The second portion has a surface area approximately equal to a surface area of one of the photodetectors or a surface area greater than or equal to the surface area of four of the photodetectors.
G06V 10/143 - Sensing or illuminating at different wavelengths
G06V 40/40 - Spoof detection, e.g. liveness detection
H04N 23/11 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
The present invention relates to an image acquisition device (1), in which photodetectors (2) have a pattern along interconnection lines (14, 16) of readout circuits (3) and first electrodes (27) of the photodetectors (2) have a cross pattern (57), of which two branches are respectively plumb with the lines (14, 16) interconnecting the readout circuits (3).
The present invention relates to an image acquisition device (2) comprising at least one organic photodetector (11) having an active layer (21) made of an organic semiconductor material and a hole injection layer (23) on the active layer (21), wherein the hole injection layer (23) has at least one coloured pigment.
The present description relates to an image sensor comprising an array of pixels arranged in rows and columns, a control circuit and a readout circuit, wherein, during an acquisition phase: - the control circuit is configured to sequentially scan all the rows of pixels of the array and to transfer, row by row, charges photogenerated in the pixels of the row to the readout circuit; and - the readout circuit is configured to integrate only the photogenerated charges originating from at least one sub-range (501) of pixel rows in line with which at least one finger (401) has been previously detected.
The present description relates to an image sensor comprising a supporting substrate and an array (101) of pixels (PIX) formed on the supporting substrate, the pixels of the array being arranged regularly, at a constant pitch, in rows and columns, each pixel (PIX) including at least one photodiode (303) and a transfer transistor (309), wherein: • A) each row of pixels is divided into first and second adjacent row portions (323A, 323B); and/or • B) each column of pixels is divided into first and second adjacent column portions.
H04N 25/443 - Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected 2D regions of the array, e.g. for windowing or digital zooming
A device includes an at least partially transparent screen and, between the screen and an optical sensor, a layer having at least one optically clear portion with a refraction index smaller by at least 0.1 than the refraction index of an optical material of the optical sensor.
G01L 1/16 - Measuring force or stress, in general using properties of piezoelectric devices
G01L 1/20 - Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluidsMeasuring force or stress, in general by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
The present description relates to a method for manufacturing a colour filter, comprising the following successive steps: a) forming openings (111) in a first layer (103) that covers a first face (101T) of a substrate (101), the first layer being suitable for transmitting light in a first wavelength range; b) covering the first layer (103) with a second layer (113) suitable for transmitting light in a second wavelength range, different from the first wavelength range; c) insulating the second layer (113) from a second face (101B) of the substrate (101) opposite the first face (101T), by using the first layer (103) as mask; and d) removing parts of the second layer (113) that are masked by the first layer (103) in step c).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
20.
OPTICAL ANGULAR FILTER AND METHOD FOR MANUFACTURING SUCH A FILTER
The present description relates to an optical angular filter (13) comprising: - a first array (31) of microlenses (41); - a second array (33) of transparent pillars (43) coating the array of microlenses, a first opaque resin layer (45) extending laterally between the pillars (43) and coating a lower portion of the flanks of the pillars (43), an upper portion of the flanks of the pillars (43) not being coated by said first opaque resin layer (45); - a transparent planarizing layer (55) coating the array (33) of transparent pillars (43); and - a third array (35) of transparent regions (47) surrounded laterally by a second opaque resin layer (49) coating the planarizing layer (55).
The present disclosure provides a color and infrared image sensor (100) comprising: – a first level in which infrared photodetectors are formed; – a second level, located above the first level, in which visible photodetectors are formed; and – a microlens layer (113) comprising a specific microlens opposite each infrared photodetector, in which the visible photodetectors are laterally offset with respect to the infrared photodetectors.
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
The present invention relates to a sensor (100) for colour and infrared images, comprising a first level in which infrared photodetectors are formed, arranged in a first array, and, above the first level, a second level in which visible photodetectors are formed, arranged in a second array having a larger spacing than that of the first array, wherein each infrared photodetector is aligned laterally relative to one of the visible photodetectors, the other visible photodetectors being offset laterally relative to the infrared photodetector.
The present description concerns an assembly comprising an electronic device (109) having a transparent surface (103) intended to be touched by a user, and a cleaning system (101) for cleaning said surface, the cleaning system (101) comprising a hood (105) and an ultraviolet radiation source (107), the ultraviolet radiation source (107) being oriented in such a way as to illuminate said surface (103) with an angle of incidence of greater than 45°.
An optical filter for an image sensor includes first opaque zones. Each of the first opaque zones occupies a surface area equal to the surface area of at least one first lens in this same first zone.
The present description relates to a method for manufacturing an angular filter, the method comprising a step of bonding: - a first structure comprising a first substrate (101) and a network (103) of microlenses (105, 105') coating the first substrate (101); and - a second structure comprising a second substrate (213) and a layer (211) of an opaque resin coating the second substrate (213).
An angular filter includes a first and a second array of plano-convex lenses and an array of openings. The planar surfaces of the lenses of the first array and of the second array face one another.
A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl compound, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material having fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 12 mg/mL to 17 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 24 mg/mL to 28 mg/mL per milliliter of solvent.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
29.
FORMULATION COMPRISING A P-TYPE ORGANIC SEMICONDUCTOR MATERIAL AND AN N-TYPE SEMICONDUCTOR MATERIAL
A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl polymer, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material including fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 4 mg/mL to 8 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 10 mg/mL to 14 mg/mL per milliliter of solvent.
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
C09D 11/033 - Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
C09D 11/102 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
A pixel includes at least one organic light-emitting component including a first hole injection layer; and at least one organic photodetector, including a second hole injection layer. The first and second hole injection layers are made of a same material.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
The present disclosure relates to an electronic device (100) adapted to run at least one application (APP1, APP2, APPn) with access control, in which a number of authentication means implemented by the access control can be configured according to the security level assigned to the application.
The present disclosure relates to an electronic device (100) comprising a fingerprint sensor (510) adapted to simultaneously acquire fingerprints from a plurality of fingers (702-1, 702-2, 702-3, 702-4), preferably two to four fingers.
G06F 21/32 - User authentication using biometric data, e.g. fingerprints, iris scans or voiceprints
G06Q 20/40 - Authorisation, e.g. identification of payer or payee, verification of customer or shop credentialsReview and approval of payers, e.g. check of credit lines or negative lists
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
G01J 5/34 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
G01J 5/34 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
G08B 13/191 - Actuation by interference with heat, light, or radiation of shorter wavelengthActuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems using infrared-radiation detection systems using pyroelectric sensor means
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
39.
FORMULATION COMPRISING A P-TYPE ORGANIC SEMICONDUCTOR MATERIAL AND AN N-TYPE SEMICONDUCTOR MATERIAL
A formulation for preparing organic electronic devices, has: a p-type organic semiconductor material, an n-type semiconductor material, and a non-aqueous solvent. The concentration of the p-type organic semiconductor material is in the range from 4 mg/mL to 25 mg/mL per milliliter of solvent and the proportion between the p-type organic semiconductor material and the n-type organic semiconductor material varies from 1:1 to 1:2 by weight.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
C09D 165/00 - Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chainCoating compositions based on derivatives of such polymers
A method of manufacturing an optoelectronic device that includes an optical sensor with organic photodiodes capable of capturing a radiation, the optical sensor covering an electronic circuit with MOS transistors. The method includes forming, on the optical sensor, on the side of the optical sensor opposite to the electronic device, a first layer transparent to the radiation, the first layer having a planar surface on the side opposite to the optical sensor; and forming a second layer on the surface, the second layer being oxygen- and water-tight.
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
A method of forming a layer from ink on a substrate, includes the steps of: depositing an ink volume with a slot-die coating device; first drying; and second drying.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
An ink includes a first non-aqueous solvent and a polymer selected from among a polyethylenimine, an ethoxylated polyethylenimine, a perfluoroanthracene, and one or a plurality of conjugated thiols.
C09D 11/36 - Inkjet printing inks based on non-aqueous solvents
C09D 11/033 - Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
C09D 11/106 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
C09D 11/102 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
The present disclosure relates to an angular filter (23) for an image acquisition device (19), comprising a stack including: a layer (41) comprising media with different refractive indices and transparent to said radiation, the layer (41) allowing only those rays of said radiation having angles of incidence lower than a first maximum angle of incidence to pass; and an matrix (31) of apertures (33) bounded by walls (35) opaque to visible and/or infrared radiation and an array (27) of microlenses (29), the assembly formed by the matrix of apertures and the array of microlenses allowing only those rays of said radiation having angles of incidence lower than a second maximum angle of incidence, lower than the first maximum angle of incidence, to pass.
The present disclosure relates to an image acquisition device comprising a stack including, in order: an organic image sensor (19); an angular filter (21); an illumination system (23); and a liquid crystal display (25), and a method for acquiring an image using such a device.
The present disclosure provides an optical angular filter having an array of pillars (33) made of a first transparent material, a matrix of walls (35) made of a second opaque material, separating the pillars from one another, the refractive index of the second material being different from that of the first material.
G02B 6/08 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres the relative position of the fibres being the same at both ends, e.g. for transporting images with fibre bundle in form of plate
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
The present disclosure relates to an angular filter (23) for an image acquisition device (19), comprising a stack including: a first matrix (31) of first apertures (333) bounded by first walls (35) opaque to visible and/or infrared radiation; an array (27) of microlenses (29); and a second matrix (41) of second apertures (43) delimited by second walls (45) opaque to visible and/or infrared radiation.
The present disclosure provides an optical filter (23) comprising: a first angular filter (231) blocking at least one first radiation (313), the angle of incidence of which is greater than a first angle of incidence; and a second angular filter (233), blocking a second radiation (311), the angle of incidence of which is greater than a second angle of incidence, the first angular filter covering the second angular filter.
The present disclosure relates to an angular filter comprising an array (27) of microlenses (29), a first matrix (31) of apertures (33) in a layer of a first resin and a second matrix (37) of apertures (39) in a layer of a second resin, the first resin blocking at least a first radiation (203) and the second resin blocking a second radiation (201) that differs from the first radiation.
A method of manufacturing an optoelectronic device includes the successive steps of forming on a support first and second electrically-conductive pads; depositing an active organic layer covering the first and second electrically-conductive pads; depositing a first interface layer on the active organic layer in contact with the active organic layer; forming a first opening in the first interface layer and a second opening in the active organic layer in line with the first opening, to expose the second electrically-conductive pad; and forming a second interface layer at least partly extending in the first and second openings. The second interface layer is in contact with the first interface layer and with the second electrically-conductive pad.
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
A matrix-array detector having: an array of pixels arranged in a matrix along rows and down columns, each pixel for generating a signal according to a physical effect; a signal generator for generating two clock signals that are phase-shifted relative to one another; and a row-addressing device including a shift register, the shift register including a plurality of stages arranged in a cascade, each stage for receiving, in alternation from one stage to another, one clock signal from the two clock signals, and delivering an intermediate output signal that takes a high value and a low value allowing the pixels of the row to be activated and to be deactivated, respectively. The signal generator is also for generating a third clock signal. The addressing device further includes a plurality of isolation circuits, each isolation circuit connected between each stage and the corresponding row of the matrix, for receiving the third clock signal, the isolation circuit also for delivering a selection signal for selecting the corresponding row of the matrix when the intermediate output signal and the third clock signal are at the high level.
A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.
A device includes an at least partially transparent screen, an optical sensor and, between the sensor and the screen, a non-peripheral portion. The non-peripheral portion includes one or a plurality of rigid elements.
An image sensor includes organic photodetectors and an angular filter less than 20 μm away from the photodetectors. Further, a method of manufacturing an image sensor includes the forming of organic photodetectors and of an angular filter less than 20 μm away from the photodetectors.
H10K 30/30 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
The present description relates to a waveguide having at least one microstructure (27) defining, with respect to a first plane (P1) parallel to a first face of the waveguide, a protuberance towards a second face of the waveguide, the protuberance being in the form of a cylinder (29) that is inclined with respect to and intersected by the first plane (P1).
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum.
H04N 23/11 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, separate photosensitive blocks covering the substrate, and color filters covering the substrate, the image sensor further including first and second electrodes on either side of each photosensitive block and delimiting a second photodiode in each photosensitive block. The first photodiodes are configured to absorb the electromagnetic waves of the visible spectrum and each photosensitive block is configured to absorb the electromagnetic waves of the visible spectrum of a first portion of the infrared spectrum.
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
58.
System for acquiring digital fingerprints equipped with an improved device for addressing lines
A fingerprint recognition system, includes a touch surface configured so as to provide location information for at least one contact point (PCO) of a finger having a fingerprint in contact with the touch surface, wherein the system comprises: a TFT panel, arranged underneath the touch surface, comprising a detection array comprising M rows at least some of which comprise detection cells for detecting an image representative of the fingerprint, a row-addressing system being integrated into the array, and configured so as to activate, row after row, the detection cells of a corresponding row in a scanning direction of the rows, a calculation device, configured so as to receive the location information and so as to command the addressing system to address the array starting from an address range (ZA) grouping together a subset of rows from among the M rows of the array, and determined on the basis of the location information.
The present description relates to a system (11) for acquiring images, comprising: a single sensor (31) based on organic photodetectors, at least a first light source (17) that is configured to emit only a first emission (19) in the red and/or near infrared, and a processing unit; and wherein: the sensor and the first source are borne by a single frame (23), the sensor is configured to capture images, the processing unit is configured to extract from said images information relating to veins and to the fingerprint of a finger (15), and the first light source is configured to emit the first emission in a direction opposite to the frame.
The present description relates to an image acquisition device comprising a single sensor (11) with organic photodetectors (43), an angular filter (13) and a colour filter (45) comprising: - one or more first parts (451) designed to allow at least one wavelength in the visible range to pass through, and - one or more second parts (453) filtering wavelengths outside the red and/or near infrared range, the second part having a surface area approximately equal to the surface area of a photodetector or a surface area greater than or equal to the surface area of four photodetectors.
The present description relates to a system for acquiring images comprising: a single organic image sensor (13), and a waveguide layer (17) that covers the image sensor and that is illuminated in the plane by: - a first source (19) configured to emit a first emission (21) having at least one wavelength comprised in the band from 400 nm to 600 nm, and - a second source (23) configured to emit a second emission (25) the one or more wavelengths of which are comprised between 600 nm and 1100 nm; and an image-processing unit (18) that is suitable for extracting information relating to fingerprints and to the veins of a hand (27) imaged by the sensor.
The present description relates to a system (10) for acquiring images of an object (12) comprising a stack of layers the total thickness of which is smaller than 600 µm, said stack comprising an image sensor (14) comprising a matrix array of photodetectors (16), a source (20) of an emission (RF) having a thickness smaller than 400 µm and comprising first and second opposite faces (22, 24), the second face being oriented toward the image sensor, the area density of the energy flux emitted by the source via the first face being higher than 100 μW/cm2, the ratio between the area density of the energy flux emitted by the source via the second face and the first face being lower than 0.4, the transmittance of the source to said portion of the emission being higher than 15%, and an angular filter (18) that covers the image sensor and that is interposed between the source and the image sensor.
A method of manufacturing an optical system including a layer having through or partially through holes and covered with an array of micrometer-range optical elements, the optical system including a surface intended to receive a first radiation, the method including exposing a film, made of the same material as the layer or of a material different from that of the layer, to a second radiation through the array of micrometer-range optical elements, the material being photosensitive to the second radiation or machinable by the second radiation, and removing the portions of the film exposed or non-exposed to the second radiation to delimit the holes totally or partially crossing said layer.
A method of manufacturing an optical system including an angular filter having a stack of first and second elementary angular filters, the method including exposing a layer of positive resist through the first elementary angular filter and removing the exposed portions of the layer to form holes crossing the layer, the layer crossed by the holes forming the second elementary angular filter.
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present invention relates to a device (1) having a stack comprising at least in the following order: an image sensor (17) in MOS technology suitable for detecting a radiation (27); a first lens array (19); a structure (21) composed of at least a first aperture matrix delimited by walls which are opaque to said radiation; and a second lens array (23).
The present description relates to an angular filter (10) comprising a support member (12) and a structure (16) resting on a surface (14) of the support member, and comprising through-holes (18) exposing portions of the surface. The angular filter is capable of blocking radiation rays whose incidence relative to a direction orthogonal to the surface is higher than a threshold, and of allowing radiation rays to pass through whose incidence relative to a direction orthogonal to the surface is lower than the threshold. The structure comprises a framework (20) which is made of a material that is at least partially transparent to the radiation, the framework being covered with a coating (22) comprising first molecules which absorb the radiation and are joined to the material by means of first covalent bonds.
The invention relates to a method for controlling a matrix detector, the detector comprising a touch-sensitive surface, a matrix of imaging pixels disposed in lines and in columns, and an illuminating surface, each pixel (PI) comprising a transistor (TR) and a photodiode (PH), the pixels (PI) of at least one line being able to be activated or deactivated by an addressing device (DA), the pixels (PI) of a same column being connected to a charge integrator (IC) able to be energised so as to read the contents of a pixel (PI) when this pixel is activated by the addressing device (DA), characterised in that the method comprises the following steps: - as long as a contact is not been detected by the touch-sensitive surface, controlling the detector in a so-called standby mode, the standby mode comprising, in a periodic manner, an activation of all the pixels (PI) of the matrix detector during a first period of duration T1 by the addressing device (DA), and a deactivation by the addressing device (DA) of all the pixels (PI) during a second period of duration T2; - on detection of the contact by the touch-sensitive surface, controlling the detector in a so-called normal mode, the normal mode comprising the sequential activation of the pixels (PI), line by line, and reading of the pixel (PI) activated in each column by the corresponding charge integrator (IC), by switching on the illuminating surface.
The present description relates to an optical filter (17) for an image sensor, comprising first opaque regions (263), each of which has a surface equal to the surface of at least one first lens (253) included in this same first region (263).
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
The present description relates to an angular filter (13) comprising a first and a second planar-convex lens array (131, 141) and a matrix of openings (137), the planar faces of the lenses (131, 141) of the first array and the second array facing each other.
An electronic device includes a substrate, a first oxygen- and water-tight protection layer covering the substrate, at least one electronic component located on the first protection layer and having at least one organic semiconductor region, an oxygen- and water-tight encapsulation layer, the oxygen- and water-tight encapsulation layer having an epoxy or acrylate glue totally covering the organic semiconductor region, a second oxygen- and water-tight protection layer totally covering the encapsulation layer, and a support layer covering the second oxygen- and water-tight protection layer.
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 51/10 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier - Details of devices
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
A device for detecting an electromagnetic radiation has at least one photodetector including an organic diode and an organic photodiode formed in a same stack of semiconductor layers, the organic photodiode receiving the radiation. The photodetector further includes at least one screen which is opaque to the radiation and screens the portion of the stack corresponding to the diode.
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
The present invention relates to an angular filter (2) for an image sensor, comprising opaque resin patterns (26) which are at least partially covered with a first moisture-proof layer (42).
The present description relates to a pixel comprising: at least one organic light-emitting component (50), comprising a first hole-injection layer (7442); and at least one organic photodetector (30), comprising a second hole-injection layer (7440), wherein the first and second hole-injection layers are made of the same material.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 27/28 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
The present description relates to a method of forming, from an ink (13), a layer (131) on a substrate (11'), said method involving the following steps: depositing a volume of ink (13) using a slot die coating device; carrying out a first drying process ; and carrying out a second drying process.
C09D 11/10 - Printing inks based on artificial resins
C09D 11/102 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
C09D 11/106 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
C09D 11/36 - Inkjet printing inks based on non-aqueous solvents
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
The present description relates to a method for forming, from an ink, a layer on a substrate (17'), said method involving the following consecutive steps: fully immersing the substrate in the ink (19); rinsing with a first solvent; carrying out a first drying process; and carrying out a second drying process.
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/48 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
The present description relates to a pixel comprising a CMOS support (3) and at least two organic photodetectors (10A and 10B, 12A and 12B, 14A and 14B, 16A and 16B), in which one and the same lens (18) is vertically in line with the organic photodetectors.
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
The invention relates to a method for manufacturing an optoelectronic device (35) comprising the successive steps of forming first and second electrically conductive pads (44, 45) on a substrate; depositing an active organic layer covering the first and second electrically conductive pads; depositing a first interface layer on the active organic layer in contact with the active organic layer; forming a first opening in the first interface layer and a second opening in the active organic layer in the extension of the first opening, in order to expose the second electrically conductive pad; and forming a second interface layer (62) extending at least partly into the first and second openings, the second interface layer being in contact with the first interface layer and with the second electrically conductive pad.
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
The present description relates to an ink comprising a first non-aqueous solvent and a polymer selected from among a polyethyleneimine, an ethoxylated polyethyleneimine, a perfluoroanthracene, and one or more conjugated thiols.
C09D 11/102 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
C09D 11/106 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
C09D 11/36 - Inkjet printing inks based on non-aqueous solvents
C09D 11/033 - Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
The present description relates to a pixel (50, 52, 54, 56) comprising a CMOS support (8) and at least two organic photodetectors (50A, 50B, 50C, 50D, 52A, 52B, 52C, 52D, 54A, 54B, 54C, 54D, 56A, 56B, 56C, 56D), in which one and the same lens (58) is vertically in line with the organic photodetectors.
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
The present invention relates to a pixel (10, 12, 14, 16) comprising a CMOS support (8) and at least two organic photodetectors (10A, 10B, 10C, 12A, 12B, 12C, 14A, 14B, 14C, 16A, 16B, 16C), in which one and the same lens (18) is in vertical alignment with said organic photodetectors.
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
The present invention concerns a method for manufacturing an optoelectronic device comprising an optical sensor with organic photodiodes capable of capturing a radiation. The optical sensor covers an electronic circuit (101) with MOS transistors (102). The method comprises forming, on the optical sensor, on the side of the optical sensor opposite the electronic circuit, a first layer (201) that is transparent to said radiation, the first layer having a flat face on the side opposite the optical sensor; and forming a second layer (301) on said face, the second layer being oxygen-tight and watertight.
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
83.
FORMULATION COMPRISING A P-TYPE ORGANIC SEMICONDUCTOR MATERIAL AND AN N-TYPE SEMICONDUCTOR MATERIAL
The present description relates to a formulation comprising a p-type organic semiconductor material, an n-type semiconductor material and a non-aqueous solvent, wherein the concentration of the p-type organic semiconductor material is 4 mg/mL to 25 mg/mL per milliliter of solvent, and the proportion between the n-type organic semiconductor material and the n-type organic semiconductor material ranges from 1:1 to 1:2 by weight.
The present description relates to a formulation comprising a p-type organic semiconductor material, an n-type semiconductor material and a non-aqueous solvent, wherein the concentration of the p-type organic semiconductor material is 4 mg/mL to 25 mg/mL per milliliter of solvent, and the proportion between the n-type organic semiconductor material and the n-type organic semiconductor material ranges from 1:1 to 1:2 by weight.
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
The present description relates to a formulation comprising a p-type organic semiconductor polymer comprising a conjugated aryl compound, a conjugated heteroaryl compound or a mixture of two or more of these compounds; an n-type semiconductor material comprising fullerene, substituted fullerene or a mixture of two or more of these compounds; a non-aqueous solvent, wherein the concentration of the p-type organic semiconductor polymer is 12 mg/mL to 17 mg/mL per milliliter of solvent, and the concentration of the p-type organic semiconductor material is 24 mg/mL to 28 mg/mL per milliliter of solvent.
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
The present description relates to a formulation comprising a p-type organic semiconductor polymer comprising a conjugated aryl compound, a conjugated heteroaryl compound or a mixture of two or more of these compounds; an n-type semiconductor material comprising fullerene, substituted fullerene or a mixture of two or more of these compounds; a non-aqueous solvent, wherein the concentration of the p-type organic semiconductor polymer is 8 mg/mL to 12 mg/mL per milliliter of solvent, and the concentration of the n-type organic semiconductor material is 18 mg/mL to 22 mg/mL per milliliter of solvent.
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
87.
FORMULATION COMPRISING A P-TYPE ORGANIC SEMICONDUCTOR MATERIAL AND AN N-TYPE SEMICONDUCTOR MATERIAL
The present description relates to a formulation comprising a p-type organic semiconductor polymer comprising a conjugated aryl compound, a conjugated heteroaryl compound or a mixture of two or more of these compounds; an n-type semiconductor material comprising fullerene, substituted fullerene or a mixture of two or more of these compounds; and a non-aqueous solvent, wherein the concentration of the p-type organic semiconductor polymer is 4 mg/mL to 8 mg/mL per milliliter of solvent, and the concentration of the n-type organic semiconductor material is 10 mg/mL to 14 mg/mL per milliliter of solvent.
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
An image acquisition system includes a source of a radiation, an image sensor including an array of photodetectors capable of detecting the radiation and including a surface, and an angular filter, covering the sensor, and capable of blocking the rays of the radiation having an incidence relative to a direction orthogonal to the surface greater than a threshold and of giving way to at least certain rays of the radiation having an incidence relative to a direction orthogonal to the surface smaller than the threshold.
G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
H01L 27/28 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
The invention relates to a device (20) comprising an at least partially transparent screen, an optical sensor (15) and, between the screen and the optical sensor, a layer (24) having at least one optically transparent portion with a refractive index lower by at least 0.1 than the refractive index of an optical material of the optical sensor.
The invention relates to a device (30) comprising an at least partially transparent screen, an optical sensor (15) and, between the sensor and the screen, a non-peripheral part which comprises one or more rigid elements (32).
The present description relates to an image sensor (80) comprising organic photodetectors (38) and an angular filter (82) at a distance of less than 20 μm from the photodetectors. The present description also relates to a process for manufacturing an image sensor (80), comprising the forming of organic photodetectors (38) and an angular filter (82) at a distance of less than 20 μm from the photodetectors.
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
92.
Device integrating an image sensor and a display screen
A device includes a display screen and an image sensor. A first electromagnetic shielding layer permeable to light is arranged between active portions of the display screen and active portions of the image sensor.
The present invention relates to a color and infrared image sensor (1) comprising a silicon substrate (12), MOS transistors (16) formed in the substrate, a stack covering the substrate and comprising a first photosensitive layer (26), an electrically insulating layer (32), a second photosensitive layer (38), and color filters (46). The image sensor further comprises electrodes (22, 28) on either side of the first photosensitive layer and delimiting first photodiodes (2), and electrodes (34, 40) on either side of the second photosensitive layer and delimiting second photodiodes (4). The first photosensitive layer (26) absorbs the electromagnetic waves of the visible spectrum and a portion of the infrared spectrum and the second photosensitive layer (38) absorbs the electromagnetic waves of the visible spectrum and lets pass the electromagnetic waves of the portion of the infrared spectrum.
The present disclosure relates to a color and infrared image sensor (1) comprising a silicon substrate (10), MOS transistors (16) formed in the substrate and on the substrate, first photodiodes (2) formed at least partially in the substrate, a photosensitive layer (26) covering the substrate, and color filters (34), the photosensitive layer being interposed between the substrate and the color filters. The image sensor further comprises first and second electrodes (22, 28) on either side of the photosensitive layer and delimiting second photodiodes (4) in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum, the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to allow the passing of the electromagnetic waves of said first portion of the infrared spectrum.
The present disclosure relates to a color and infrared image sensor (1) comprising a silicon substrate (10), MOS transistors (16) formed in the substrate and on the substrate, first photodiodes (2) formed at least partially in the substrate, disjoint photosensitive blocks (26) covering the substrate and color filters (34) covering the substrate, the image sensor further comprising first and second electrodes (22, 28) on either side of each photosensitive block and delimiting a second photodiode (4) in each photosensitive block. The first photodiodes are configured to absorb the electromagnetic waves of the visible spectrum and each photosensitive block is configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum.
ij,GOAQOAQOA in the peripheral region furthermore serves, via a coverage in direct contact, as an interconnect structure for biasing the top electrode E2 of the organic photodiodes of the active region with the biasing voltage Vbias. In the active region, the level 203 of the top electrode E2 is separated from the level 201 of the pixel electrode E1 by the organic active structure OST. In the peripheral region, these two topological levels 201 and 203 are formed directly on each other, without interposition.
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
The invention relates to a matrix detector comprising: - a set of pixels arranged in a matrix according to lines (L) and columns, each pixel (P) being suitable for generating a signal depending on a physical phenomenon, - a signal generator (GSI) configured to generate two clock signals (CK1, CK 2) phase-shifted with respect to one another, - a device for addressing the lines comprising a shift register (SR), the shift register (SR) comprising a plurality of stages (ET) arranged in cascade, each stage (ET) being capable of receiving, alternately from one stage to another, a clock signal from the two clock signals (CK1, CK2), and being capable of issuing an intermediate output signal (OUTn), which can assume a high level (Von) and a low level (Voff), enabling activation and deactivation respectively of the pixels in the line, characterised in that the signal generator (GSI) is also configured to generate a third clock signal (CK3), the addressing device also comprising a plurality of isolation circuits (ISL), each isolation circuit (ISL) being connected between each stage (ET) and the corresponding line (LI) of the matrix, and configured to receive the third clock signal (CK3), the isolation circuit (ISL) being configured to issue a select signal (OUT_LINE_n) selecting the corresponding line of the matrix when the intermediate output signal (OUTn) and the third clock signal (CK3) are at a high level (Von).
H03K 17/06 - Modifications for ensuring a fully conducting state
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
G11C 19/28 - Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
98.
SYSTEM FOR ACQUIRING DIGITAL FINGERPRINTS EQUIPPED WITH AN IMPROVED DEVICE FOR ADDRESSING LINES
The invention relates to a system for recognizing digital fingerprints, comprising a tactile surface, configured to provide an item of location information (InfoLoc) on at least one contact point (PCO) of a finger with a digital fingerprint in contact with the tactile surface, characterized in that the system comprises: - a TFT panel, arranged under the tactile surface, comprising a detection matrix comprising M lines, at least some of which comprise cells (P(i,j)) for detecting an image that represents the digital fingerprint, an addressing line system being integrated into the matrix and configured to activate, line after line, the detection cells (P(i,j)) of a corresponding line, along a direction of scanning the lines, - a calculation device (CALC) configured to receive the item of location information (InfoLoc) and to control the addressing system for addressing the matrix using an addressing zone (ZA) regrouping a subset of lines among the M lines of the matrix, and determined according to the item of location information (InfoLoc).
A display system including a display screen having first and second display sub-pixels where each first display sub-pixel includes a first light-emitting component emitting a first radiation and covered with a first colored filter and first conductive tracks and where each second display sub-pixel includes a second light-emitting component emitting a second radiation and covered with a second colored filter and second conductive tracks. The display system further includes an image sensor detecting the first or second radiation or a third radiation. The first display sub-pixels include first elements absorbing the first radiation and the second radiation and covering the first conductive tracks. The first absorbing elements and/or the first colored filter delimit a first passageway along the stacking direction for the first, second, or third radiation.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
ISORG (France)
Inventor
Daami, Anis
Benwadih, Mohammed
Abstract
A photoresistor comprises two electrodes connected by a photosensitive layer of the photoresistor, and at least one additional layer which is in contact with the photosensitive layer in order to influence the behavior of the photoresistor regarding carrier collection between the two electrodes, in order to improve the sensitivity of the photoresistor.
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
