Abstract

The disclosure describes a method of stabilizing a carbon supported noble metal catalyst by selective metal oxide deposition on the carbon support of the catalyst by a vapor deposition process. The method includes the flowing steps: a) Providing a carbon supported noble metal catalyst, b) Forming a blocking layer over an exposed surface of the noble metal on the catalyst, c) Exposing the catalyst to a gas containing metal organic compounds to absorb the compounds selectively to the carbon support, d) Exposing the catalyst to an oxidant to form a metal oxide on the catalyst carbon support, e) Repeating steps c) and d) sequentially for one to ten of cycles, preferably one to five cycles, f) Removing the blocking layer from the catalyst to re-expose the noble metal catalyst surface.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• B01J 23/847 - Vanadium, niobium or tantalum
• B01J 37/02 - Impregnation, coating or precipitation

Abstract

A method for heating a furnace with an ammonia-fired burner producing a stable flame including heating a first stream of ammonia through heat exchange with a stream of flue gas, thereby producing a heated first stream of ammonia. Feeding the heated first stream of ammonia to an ammonia cracker to produce a stream of cracked ammonia. Heating a stream of air through heat exchange with the stream of flue gas at a second heat exchanger to produce a heated stream of air. Feeding the heated stream of air to a burner. Feeding a second stream of ammonia to the burner. And feeding the stream of cracked ammonia to the burner for injection into the combustion space to produce a pilot flame through combustion of the injected stream of cracked ammonia and amounts of the injected heated stream of air.

IPC Classes  ?

• C01B 3/38 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts
• B01D 53/047 - Pressure swing adsorption
• C01B 3/04 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of inorganic compounds, e.g. ammonia
• C01B 3/56 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solidsRegeneration of used solids

Abstract

A method of forming Group 2 metal containing films on a substrate comprises a) exposing the substrate to a vapor of a Group 2 metal containing film forming composition that contains an alkaline earth metal precursor having the formula:wherein M is Be, Mg, Ca, Sr, or Ba; R1- R611010 alkyl group, a fluoro group, an alkylsilyl group, a germyl group, an alkylamide or an alkylsilylamide, b) depositing at least part of the alkaline earth metal precursor onto the substrate to form a Group 2 metal-containing film through a vapor deposition process; and c) repeating a) and b) until a desired thickness of the Group 2 metal containing film is formed.

IPC Classes  ?

• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Abstract

A method for producing hydrogen using a feed stream comprising ammonia is provided. The method can include the steps of: cracking a gaseous ammonia feed in an ammonia cracker to produce a cracked gas stream comprising hydrogen, nitrogen, and unreacted ammonia; cooling the cracked gas stream to a first temperature that is sufficient for condensing at least a portion of the unreacted ammonia to form a dual phase fluid; separating the dual phase fluid in an ammonia separator to produce a liquid ammonia stream and a top gas stream comprised predominately of hydrogen and nitrogen; removing additional ammonia from the top gas stream using a front-end purification system to form a purified top gas stream; further cooling the purified top gas stream to a second temperature that is sufficient for condensing at least a portion of the nitrogen within the top gas stream to form a dual-phase stream, wherein the second temperature is colder than the first temperature; introducing the dual-phase stream to a cryogenic hydrogen separator under conditions effective for separating hydrogen and nitrogen, thereby creating a liquid nitrogen stream and a hydrogen top gas; warming and vaporizing the liquid nitrogen stream to produce a gaseous nitrogen stream; warming the hydrogen top gas to produce a gaseous hydrogen product stream: and recycling the liquid ammonia stream produced by the ammonia separator to a point upstream the ammonia cracker.

IPC Classes  ?

• C01B 3/04 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of inorganic compounds, e.g. ammonia
• C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
• F25J 1/00 - Processes or apparatus for liquefying or solidifying gases or gaseous mixtures
• C01B 3/56 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solidsRegeneration of used solids

Abstract

A method for producing hydrogen using a feed stream comprising ammonia is provided. The method may include the steps of: cracking a gaseous ammonia feed comprising ammonia and at least 0.15% water vapor in an ammonia cracker to produce a cracked gas stream comprising hydrogen, nitrogen, unreacted ammonia, and water vapor; cooling the cracked gas stream to a separation temperature that is sufficient for condensing at least a portion of the unreacted ammonia and the water vapor to form a dual phase fluid; separating the dual phase fluid in a separator that is configured to produce an aqueous ammonia stream and a vapor stream, the vapor stream comprising predominantly of hydrogen and nitrogen; wherein the separation temperature is below 0°C.

IPC Classes  ?

• C01B 3/04 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of inorganic compounds, e.g. ammonia
• C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
• C01B 3/56 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solidsRegeneration of used solids

Abstract

A method for removing entrained liquid droplets from a gas is provided. This method includes introducing a gas with entrained liquid droplets into a cyclone separator, thereby producing a gaseous portion and a liquid portion, wherein the gaseous portion exits the cyclone separator, and wherein the liquid portion is restricted by a liquid control valve and collected in a reservoir volume in the cyclone separator. The method also includes opening the liquid control valve upon receiving a signal from a liquid level sensor located in the reservoir volume, the liquid portion exits the cyclone separator and is introduced into a lock hopper. The method also provides a pressurized vapor stream to the lock hopper, thereby pressurizing the lock hopper, and then withdrawing a pressurized liquid stream from the lock hopper.

IPC Classes  ?

• F25J 3/08 - Separating gaseous impurities from gases or gaseous mixtures

Abstract

A method for removing entrained liquid droplets from a gas is provided. The method includes introducing a gas with entrained liquid droplets into a cyclone separator, thereby producing a gaseous portion and a liquid portion. Wherein the gaseous portion exits the cyclone separator, and wherein the liquid portion is restricted by a liquid control valve and collected in a reservoir volume in the cyclone separator. The method also includes opening the liquid control valve upon receiving a signal from a liquid level sensor located in the reservoir volume, the liquid portion thereby exiting the cyclone separator.

IPC Classes  ?

• B01D 45/16 - Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by centrifugal forces generated by the winding course of the gas stream
• B01D 45/18 - Cleaning-out devices
• F25J 3/06 - Processes or apparatus for separating the constituents of gaseous mixtures involving the use of liquefaction or solidification by partial condensation

Abstract

A method for pressurizing a liquid exiting a phase separator includes opening an inlet control valve, thereby providing a two-phase fluid stream to a phase separator and producing a vapor stream and a liquid stream. Wherein a first liquid control valve prevents the liquid stream from leaving the phase separator. Then closing the inlet control valve and opening the first liquid control valve, thereby withdrawing the liquid stream from the phase separator and introducing the liquid stream into a lock hopper. Wherein, a second liquid control valve prevents the liquid stream from leaving the lock hopper. Then closing the first liquid control valve and then opening a pressurized vapor control valve, thereby providing a pressurized vapor stream to the lock hopper, thereby pressurizing the lock hopper. Then closing the pressurized vapor control valve, and opening the second liquid control valve, thereby withdrawing a pressurized liquid stream from the lock hopper.

IPC Classes  ?

• F25J 3/06 - Processes or apparatus for separating the constituents of gaseous mixtures involving the use of liquefaction or solidification by partial condensation

Abstract

An apparatus for securing nuts in a vibrating environment, including a plurality of anti-vibration adaptors, designed to mate with a nut in a vibrating environment, and a plurality of anti-vibration rods. Wherein at least two adjacent anti-vibration adaptors are rigidly linked by an anti-vibration rod, thereby forming an anti-vibration web. A method for securing nuts in a vibrating environment, including attaching an anti-vibration adaptor to each of a plurality of nuts in a vibrating environment, and rigidly linking each anti-vibration adaptor to at least two adjacent anti-vibration adaptors, thereby forming an anti-vibration web. Thus, allowing each anti-vibration adaptor to be associated with a specific nut, and prohibiting any anti-vibration adaptor and the associated nut to turn.

IPC Classes  ?

• F16B 39/10 - Locking of screws, bolts, or nuts in which the locking takes place after screwing down by a plate or ring immovable with regard to the bolt or object

Abstract

A method and apparatus for adjusting the temperature inside a reformer tube is provided. This includes utilizing at least one heating element. The heating element is inserted inside the reformer tube and is located approximately at the axial center of the reformer tube. The reformer tube is then filled with catalyst, thereby maintaining the central location of the heating element. The heat input of the heating element may now be adjusted, thereby controlling the temperature of the catalyst.

IPC Classes  ?

• B01J 8/06 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds in tube reactorsChemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds the solid particles being arranged in tubes
• B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes
• C01B 3/38 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts

Abstract

Method and apparatus for adjusting the temperature inside a reformer tube. Including providing at least one axial quench lance, wherein the at least one axial quench lance configured to receive a temperature control gas, the at least one axial quench lance having multiple delivery holes, and the at least one axial quench lance configured to deliver the temperature control gas through the multiple delivery holes. Inserting the at least one axial quench lance inside the reformer tube, wherein the at least one axial quench lance is located approximately at the axial center of the reformer tube. Filling the reformer tube with catalyst, thereby maintaining the location of the at least one axial quench lance. Introducing the temperature control gas into the at least one axial quench lance, the temperature control gas thereby exiting the multiple delivery holes and entering the catalyst. Adjusting the flow rate of the temperature control gas thereby controlling the temperature of the catalyst.

IPC Classes  ?

• B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
• C01B 3/38 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts

Abstract

xyzz group substituted on the aromatic ring, where x, y and z are integers, and at least one of the R1, R2, R3, R4 and R5 contains at least one fluorine atom, and S represents the -SH thiol group.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

A heat integration method, including providing a hot gas stream, wherein the hot gas stream includes carbon dioxide and at least one gas from the following: carbon monoxide, nitrogen, and oxygen. Recovering waste heat from the hot gas stream by producing a steam stream by indirect heat exchange, and utilizing the steam stream in a carbon capture system, wherein the carbon capture system includes a cryogenic partial condensation step. Wherein the carbon capture system produces a product carbon dioxide stream.

IPC Classes  ?

• F01K 17/04 - Use of steam or condensate extracted or exhausted from steam engine plant for specific purposes other than heating
• B01D 53/00 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols
• F22B 1/18 - Methods of steam generation characterised by form of heating method by exploitation of the heat content of hot heat carriers the heat carrier being a hot gas, e.g. waste gas such as exhaust gas of internal-combustion engines
• F25J 3/02 - Processes or apparatus for separating the constituents of gaseous mixtures involving the use of liquefaction or solidification by rectification, i.e. by continuous interchange of heat and material between a vapour stream and a liquid stream

Goods & Services

installations for blending and delivering chemicals, namely, prefabricated packaged rooms containing chemical mixers, chemical dispensers, and machines for collecting and storing liquid chemical waste in drums and totes

Goods & Services

chemical blending systems for producing liquid chemicals by reacting gas components with water

Goods & Services

Automated machines for collecting and storing liquid chemical waste in drums and totes

Abstract

A method for creating colloidal gas aphrons (CGAs) and using the CGAs to remove contaminants from a contaminated water comprises feeding the contaminated water into a reactor; optionally adding at least one surface active substances to the reactor; fluidly connecting the reactor to a microbubble generation device that generates microbubbles therein; circulating the water from the reactor to the microbubble generation device and back to the reactor; creating the CGAs in the microbubble generation device and forwarding the CGA containing water to the reactor, wherein the CGAs adsorb the contaminates in the water and carries the contaminates to the surface of the water forming a layer of microfoam thereon; removing the layer of the microfoam; and extracting a treated water.

IPC Classes  ?

• B03D 1/08 - Subsequent treatment of concentrated product
• C02F 1/58 - Treatment of water, waste water, or sewage by removing specified dissolved compounds

Abstract

A process is disclosed by which a Zinc containing material is deposited by a vapor phase deposition onto a metallic substrate. The process includes use of a strong reducing agent to produce a deposited material with metallic Zn. The metallic Zinc may penetrate into the metallic substrate to form a Zinc alloy thereof extend from the surface into the substrate material.

IPC Classes  ?

• C23C 16/14 - Deposition of only one other metal element
• C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

A method for depositing an iodine-containing film on a substrate material comprises: exposing the substrate material to a vapor of a film-forming composition comprising an iodine-containing precursor having a formula of CaHxIyFz, wherein a=1-10, x≥0, y≥1, z≥0, x+y+z=a, 2a or 2a+2; provided that when a=1, x=2 and z=0, y is not equal to 2, and depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a vapor deposition method. The method further comprises exposing the substrate material to a vapor of a co-reactant nitrogen-containing molecule having a general formula CxHyFzNHa where x=1-6, y=0-13, z=0-13, and a=1-2 or CxHyFzN—R1, where x=1-6, y=0-13, z=0-13, and R1 is a C1-C5 hydrocarbon.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
• C23C 16/56 - After-treatment

Abstract

Disclosed are methods for forming a high aspect ratio (HAR) structure during a HAR etch process in a substrate in a reaction chamber, the method comprising: sequentially or simultaneously exposing the substrate to a vapor of an etchant including a hydrofluorocarbon or fluorocarbon compound and an additive compound, the substrate having a film disposed thereon and a patterned mask layer disposed on the film; activating a plasma to produce an activated hydrofluorocarbon or fluorocarbon compound and an activated additive compound; and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compound and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers

Abstract

A system for producing biogas comprises a bioreactor, configured to produce the biogas under a reaction condition, including a main body that contains a sludge of a mixture of a biowaste, an alkaline chemical, a pH buffer agent and/or an iron-based additive, and a headspace that contains the produced biogas, a plurality of transducers, configured to measure a headspace pressure through communicating with a PLC for pressure control, installed at a plurality of locations in the bioreactor, and a vacuum pump, configured to extract the produced biogas out of the bioreactor and simultaneously to pump the headspace to a vacuum or a negative pressure, wherein, when the headspace pressure is above a set-point set by the PLC, the vacuum pump is turned on to extract the biogas out of the bioreactor; when the headspace pressure is below the set-point, the vacuum pump is turned off.

IPC Classes  ?

• C02F 11/04 - Anaerobic treatmentProduction of methane by such processes
• B01D 3/10 - Vacuum distillation
• C02F 1/66 - Treatment of water, waste water, or sewage by neutralisationTreatment of water, waste water, or sewage pH adjustment
• C02F 3/28 - Anaerobic digestion processes
• C02F 9/00 - Multistage treatment of water, waste water or sewage
• C12M 1/107 - Apparatus for enzymology or microbiology with means for collecting fermentation gases, e.g. methane

Abstract

211010 alkyl group; X = Substituted or unsubstituted diketones, aminoketones, alkoxyalcohols, alkoxyalkanes, alkanediols, alkanolamines, aminoaldehydes, diimines, dienes; and L = Substituted or unsubstituted cyclopentadienes, cyclohexadienes, cycloheptadienes, cyclooctadienes, fluorenes, indenes, fused ring systems, propenes, butadienes, pentadienes, hexadienes, heptadienes.

IPC Classes  ?

• C07F 9/00 - Compounds containing elements of Groups 5 or 15 of the Periodic Table
• C23C 16/34 - Nitrides
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass

Abstract

The invention relates to a Metal-containing film forming composition comprising a precursor having the formula M(=NR133, in which M = V or Nb or Ta; R11-1010 alkyl group; and L is substituted or unsubstituted diketones, aminoketones, alkoxyalcohols, alkoxyalkanes, alkanediols, alkanolamines, aminoaldehydes, diimines, dienes.

IPC Classes  ?

• C07F 9/00 - Compounds containing elements of Groups 5 or 15 of the Periodic Table
• C23C 16/34 - Nitrides
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass

Abstract

A compact vision-sensing device for a robotic welding arm, having a high- resolution camera, a multi-color light source configured to have multi-color selectivity, and a means of dust and welding fume protection configured to automatically close and protect the high-resolution camera and multi-color light source during a welding operation.

IPC Classes  ?

• B25J 9/16 - Programme controls
• B23K 9/095 - Monitoring or automatic control of welding parameters

Abstract

Disclosed are chemicals suitable for use as a volatile precursor for vapor phase depositions of Ru containing materials, the chemical represented by the formula (NACD)-Ru-Lx, where x = 1-3 and NACD is a non-aromatizable cyclic diene.

IPC Classes  ?

• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
• C07F 15/00 - Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation

Abstract

Process and method to produce ammonia with high CO2 capture rate. The invention entails production of ammonia in an efficient and innovative way with minimum carbon emissions within the production unit by use of only one CO2 removal unit and a minimum process heat exchange duties provided by heat of combustion. The proposed novel solution allows achieving a direct CO2 capture rate of >95% by the autothermal reforming based ammonia production process with one CO2 removal unit with an efficient thermal integration and a low duty fired heater ensuring minimum direct carbon emission.

IPC Classes  ?

• C01B 3/02 - Production of hydrogen or of gaseous mixtures containing hydrogen
• C01B 3/16 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen, e.g. water, acids, bases, ammonia, with inorganic reducing agents by reaction of water vapour with carbon monoxide using catalysts
• C01B 3/38 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts
• C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
• C01C 1/04 - Preparation of ammonia by synthesis

Abstract

Process and method to generate hydrogen with high CO2 capture rate. The invention entails production of hydrogen in an efficient and innovative way without any continuous carbon emissions within the hydrogen production unit by use of only one CO2 removal unit. The proposed novel solution allows achieving a direct CO2 capture rate of >99% by the autothermal reforming based hydrogen generation process with one CO2 removal unit with an efficient thermal integration and without any fired heater.

IPC Classes  ?

• C01B 3/16 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen, e.g. water, acids, bases, ammonia, with inorganic reducing agents by reaction of water vapour with carbon monoxide using catalysts
• C01B 3/02 - Production of hydrogen or of gaseous mixtures containing hydrogen
• C01B 32/50 - Carbon dioxide

Abstract

A system and method for minimizing heat leaks to a liquid cryogen pump incorporating a bayonet includes a male bayonet portion received in a female bayonet portion, each having a circular cross-section and comprising an outer pipe surrounding an inner pipe and an annulus therebetween which is under vacuum, wherein a liquid cryogen pump is contained within an interior of the male bayonet portions.

IPC Classes  ?

• F04B 15/08 - Pumps adapted to handle specific fluids, e.g. by selection of specific materials for pumps or pump parts for liquids near their boiling point, e.g. under subnormal pressure the liquids having low boiling points
• F04B 53/16 - CasingsCylindersCylinder liners or headsFluid connections
• F04B 53/22 - Arrangements for enabling ready assembly or disassembly
• F16L 59/065 - Arrangements using an air layer or vacuum using vacuum

Abstract

5555555-containing composition is expected to be more thermally stable and provides stable vapor supply.

IPC Classes  ?

• C23C 16/08 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
• C01G 39/04 - Halides

Abstract

A method and apparatus for retrofitting an existing steam methane reformer (SMR) for ammonia cracking is provided. In this embodiment, the existing SMR can include a pre-reformer, a desulfurization unit, a furnace (50), waste heat recovery sections, a water gas shift reactor, a pressure swing adsorption (PSA) unit, wherein the furnace (50) has a plurality of SMR tubes and a plurality of burners. In certain embodiments, the method can include the steps of: providing the existing SMR; taking the desulfurization unit offline such that no fluid flows through the desulfurization during operation; taking the pre-reformer offline such that no fluid flows through the pre-reformer during operation; and adding means for providing a gaseous ammonia stream to the SMR tubes.

IPC Classes  ?

• C01B 3/04 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of inorganic compounds, e.g. ammonia
• C01B 3/56 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solidsRegeneration of used solids

Abstract

A method and apparatus is provided for producing hydrogen in an steam methane reformer (SMR) via ammonia cracking, wherein the SMR can include a furnace (50), a pressure swing adsorption (PSA) unit, waste heat recovery sections (10, 90), and a water scrubber, wherein the furnace (50) has a plurality of SMR tubes and a plurality7 of burners. The method can include the steps of: withdrawing ammonia from an ammonia storage vessel; preheating the ammonia to form a warm ammonia stream; introducing the warm ammonia stream into the SMR tubes of the furnace (50) under conditions effective for catalytically cracking the ammonia, thereby forming a crude stream (53) comprising hydrogen, nitrogen, and unreacted ammonia; treating the crude stream (53) with a water wash in order to remove the unreacted ammonia from the crude stream (53), thereby resulting in an aqueous ammonia stream and a washed crude stream (103); and introducing the washed crude stream (103) into the PSA unit to produce a hydrogen product stream and a PSA off-gas.

IPC Classes  ?

• C01B 3/04 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of inorganic compounds, e.g. ammonia
• C01B 3/52 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with liquidsRegeneration of used liquids
• C01B 3/56 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solidsRegeneration of used solids

Abstract

A gas seal to seal an oxygen-rich process gas within a compressor or expander, including a rotor component having a rotating element and a stator component having a stationary element. Wherein at least a portion of the rotating element includes the teeth of a first labyrinth seal. Wherein the first labyrinth seal is part of a first sealing zone. Wherein at least a portion of the stationary element includes the teeth of a second labyrinth seal. Wherein the second labyrinth seal is part of a second sealing zone.

IPC Classes  ?

• F01D 11/02 - Preventing or minimising internal leakage of working fluid, e.g. between stages by non-contact sealings, e.g. of labyrinth type

Abstract

A method of separating and reusing unconverted ammonia from cracked ammonia gas provided by an ammonia cracking unit is provided. The method includes introducing a cracked ammonia gas stream into a water wash column, thereby producing a clean gas stream and a water-containing effluent stream and introducing the water-containing effluent stream into a stripping column, thereby producing a cleaned wash water stream and a recovered ammonia stream. Wherein the cracked ammonia gas stream has an ammonia concentration of between 0.003 mol% and 10 mol%. Wherein the clean gas stream has an ammonia concentration of between 1 ppm and 2500 ppm. And wherein at least a portion of the recovered ammonia stream is used as fuel within the ammonia cracking unit.

IPC Classes  ?

• B01D 53/14 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
• C01C 1/12 - Separation of ammonia from gases and vapours
• C01B 3/04 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of inorganic compounds, e.g. ammonia

Abstract

Disclosed is a chemical suitable for use as a volatile precursor for vapor phase depositions of Mo or Cr containing materials, the chemical represented by one of the following formulae: a) Formula I, b) Formula II. Use of the chemical for vapor phase depositions is demonstrated.

IPC Classes  ?

• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Abstract

An etching method for forming a high aspect ratio aperture by selectively etching one or more silicon-containing films in a substrate using a patterned mask layer deposited on top of the one or more silicon-containing films comprises: mounting the substrate in a processing chamber; introducing an etching gas containing a vapor of an oxygen-containing hydrofluorocarbon into the processing chamber; converting the etching gas to a plasma; and allowing an etching reaction to proceed between the plasma and the one or more silicon-containing films so that the one or more silicon-containing films are selectively etched versus the patterned mask layer to form the high aspect ratio aperture, wherein the oxygen-containing hydrofluorocarbon has a general formula CxHyFzOn, where 2≤x≤13, 1≤y≤15, 1≤z≤21, 1≤n≤3.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers

Abstract

An etching method for forming an aperture by selectively etching one or more silicon-containing films in a substrate using a patterned mask layer deposited on top of the one or more silicon-containing films comprises: mounting the substrate in a processing chamber; introducing an etching gas containing a vapor of an oxygen-containing hydrofluorocarbon into the processing chamber; converting the etching gas to a plasma; and allowing an etching reaction to proceed between the plasma and the one or more silicon-containing films so that the one or more silicon-containing films are selectively etched versus the patterned mask layer to form the aperture, wherein the oxygen-containing hydrofluorocarbon has a general formula CxHyFzOn, where 2≤x≤13, 1≤y≤15, 1≤z≤21, 1≤n≤3.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers
• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer

Abstract

A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula: A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula: (NR8R9)(NR1R2)Ga[(R3R4N)Cx(R5R6)(NR7)]  (I) A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula: (NR8R9)(NR1R2)Ga[(R3R4N)Cx(R5R6)(NR7)]  (I) (Cy-N)2Ga[(R3R4N)Cx(R5R6)(NR7)]  (II) A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula: (NR8R9)(NR1R2)Ga[(R3R4N)Cx(R5R6)(NR7)]  (I) (Cy-N)2Ga[(R3R4N)Cx(R5R6)(NR7)]  (II) wherein, R1 to R9 are independently selected from H, Me, Et, nPr, iPr, nBu, iBu, sBu, or tBu; R1 to R9 may be the same or different; x=2, 3, 4, preferably x=2; Cy-N refers to saturated N-containing rings or unsaturated N-containing rings.

IPC Classes  ?

• C23C 16/40 - Oxides
• C07F 5/00 - Compounds containing elements of Groups 3 or 13 of the Periodic Table
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

xyznn, where 2 ≤ x ≤ 13, 1 ≤ y ≤ 15, 1 ≤ z ≤ 21, 1 ≤ n ≤ 3.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

xyznn, where 2 ≤ x ≤ 13, 1 ≤ y ≤ 15, 1 ≤ z ≤ 21, 1 ≤ n ≤ 3.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

A method for forming a substantially vertical structure comprises: exposing a substrate to a vapor of an additive comprising a nitrogen-containing cyclic compound, the substrate having a film disposed thereon and a patterned mask layer disposed on the film, activating a plasma to produce an activated nitrogen-containing cyclic compound, and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated nitrogen-containing cyclic compound to selectively etch the film from the patterned mask layer, thereby forming the substantially vertical structure, wherein the nitrogen-containing cyclic compound reduces a charge that builds up along sidewalls of the substantially vertical structure forming a conductive sidewall passivation layer on the sidewalls thereof. A method of depositing a conductive polymer layer on a substrate and a cyclic method are also disclosed.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers
• H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer

Abstract

A method for forming a substantially vertical structure comprises: exposing a substrate to a vapor of an additive comprising a nitrogen-containing cyclic compound, the substrate having a film disposed thereon and a patterned mask layer disposed on the film, activating a plasma to produce an activated nitrogen-containing cyclic compound, and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated nitrogen-containing cyclic compound to selectively etch the film from the patterned mask layer, thereby forming the substantially vertical structure, wherein the nitrogen-containing cyclic compound reduces a charge that builds up along sidewalls of the substantially vertical structure forming a conductive sidewall passivation layer on the sidewalls thereof. A method of depositing a conductive polymer layer on a substrate and a cyclic method are also disclosed.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

A method of forming a conformal and continuous crystalline Si film on a surface of a substrate comprises: exposing the substrate to a vapor of a first Si-containing precursor under a first temperature; allowing a seed film being formed onto the surface; exposing the substrate to a vapor of a second Si-containing precursor and a vapor of a dopant precursor under a second temperature; depositing a doped amorphous Si-containing film onto the seed film by a chemical vapor deposition (CVD) process; and annealing the substrate to crystalize the doped amorphous Si-containing film forming the conformal and continuous crystalline Si film on the surface. The first Si-containing precursor is (diisobutylamine)trisilane ((iBu)2-N—(SiH2)2—SiH3).

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/02 - Pretreatment of the material to be coated
• C23C 16/24 - Deposition of silicon only
• C23C 16/56 - After-treatment
• C30B 1/02 - Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
• C30B 29/06 - Silicon

Abstract

22233).

IPC Classes  ?

• C23C 16/24 - Deposition of silicon only
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Abstract

A method and apparatus for producing hydrogen in a steam methane reformer with reduced carbon emissions that can include the steps of: heating a feed stream comprising methane in a first heat exchanger to produce a heated feed stream, wherein the heated feed stream is at a temperature above 500°C; introducing the heated feed stream into a reaction zone under conditions effective for catalytic conversion of the heated feed stream to produce a reformed stream, wherein the reformed stream comprises hydrogen, carbon monoxide, and unreacted methane; introducing the reformed stream in the presence of steam to a shift conversion unit that is configured to produce a shifted gas stream comprising hydrogen and carbon dioxide; and purifying the shifted gas stream to produce a hydrogen product stream and a tail gas; wherein the conditions effective for catalytic conversion of the heated feed stream comprise providing heat to the reaction zone via combustion of a fuel and a hydrogen fuel stream in presence of an oxidizer, wherein the fuel comprises ammonia, wherein a flue gas is produced by the combustion of the fuel and the hydrogen fuel stream.

IPC Classes  ?

• C01B 3/38 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts
• C01B 3/48 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents followed by reaction of water vapour with carbon monoxide
• C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification

Abstract

A method for separating hydrogen from a hydrogen-containing hydrocarbon stream, including introducing a hydrogen-containing hydrocarbon stream into a membrane separation unit, thereby producing a hydrogen-lean hydrocarbon retentate stream and hydrogen-rich permeate stream. Wherein the hydrogen-containing hydrocarbon stream has greater than 50 mol% hydrogen. And wherein the hydrogen- lean hydrocarbon retentate stream has more than 5 mol% hydrogen and less than 20 mol% hydrogen.

IPC Classes  ?

• B01D 53/047 - Pressure swing adsorption
• B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
• C01B 3/56 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solidsRegeneration of used solids
• F17D 1/04 - Pipe-line systems for gases or vapours for distribution of gas

Abstract

A method for separating hydrogen and nitrogen from a gas mixture, including a) thereby partially condensing a hydrogen and nitrogen gas mixture and producing a two-phase stream, b) phase separating the two-phase stream, producing a nitrogen-enriched liquid fraction and a hydrogen-enriched gaseous fraction, c) expanding the nitrogen-enriched liquid fraction, producing a lower-pressure nitrogen-enriched liquid or two-phase stream, d) adding heat to the lower-pressure nitrogen-enriched liquid stream, producing a warm nitrogen enriched gaseous stream, and e) adding heat to the hydrogen-enriched gaseous fraction, producing a hydrogen-rich product stream. Wherein, at least a portion of the heat added in step d) is removed in step a), at least a portion of the heat added in step e) is removed in step a), or at least a portion of the heat added in step d) and at least a portion of the heat added in step e) is removed in step a).

IPC Classes  ?

• F25J 3/00 - Processes or apparatus for separating the constituents of gaseous mixtures involving the use of liquefaction or solidification

Abstract

A method for balancing a turboexpanders rotor assembly and/or compressor rotor assembly including a hub face and rotor blades is provided. The method includes removing an amount of mass from at least one side of the rotor assembly by drilling two or more balancing holes into the rotor assembly. The two or more balancing holes having a hole diameter (D), and the two or more balancing holes having a spacing between nearest hole edges of the two holes (C), wherein, C / D > 0.1.

IPC Classes  ?

• F01D 5/02 - Blade-carrying members, e.g. rotors
• F04D 29/66 - Combating cavitation, whirls, noise, vibration, or the likeBalancing

Abstract

A method for forming an aperture pattern in a substrate, the substrate including a film disposed thereon and a patterned mask layer disposed on the film, comprises 1) exposing the substrate to a vapor of a passivation molecule in a non-plasma condition for a period to form a surface protective layer on the patterned mask layer, 2) exposing the substrate to a plasma activated etch gas and plasma dry etching the substrate to form apertures over the patterned mask layer in the film with the plasma activated etch gas, and 3) repeating step 1) and 2) until a desired aperture pattern is formed in the film, wherein the surface protective layer is also formed on the sidewalls of the apertures formed in the film, wherein the passivation molecule has a boiling point equal to or larger than 20° C.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

A method for forming an aperture pattern in a substrate, the substrate including a film disposed thereon and a patterned mask layer disposed on the film, comprises 1 ) exposing the substrate to a vapor of a passivation molecule in a non-plasma condition for a period to form a surface protective layer on the patterned mask layer, 2) exposing the substrate to a plasma activated etch gas and plasma dry etching the substrate to form apertures over the patterned mask layer in the film with the plasma activated etch gas, and 3) repeating step 1 ) and 2) until a desired aperture pattern is formed in the film, wherein the surface protective layer is also formed on the sidewalls of the apertures formed in the film, wherein the passivation molecule has a boiling point equal to or larger than 20°C.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

Low carbon hydrogen will play a crucial role in decarbonization of chemical complexes and manufacturing facilities. Depending on the application, different grades of low carbon hydrogen might be required - fuel grade (90-99% H2 purity) or chemical grade (>99% H2 purity). The current invention describes a hydrogen production process based on autothermal reforming and CO2 capture to produce low carbon hydrogen with hydrogen rich offgas as part of the feedstock.

IPC Classes  ?

• C01B 3/38 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts
• C01B 3/48 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents followed by reaction of water vapour with carbon monoxide
• C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
• C01B 3/52 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with liquidsRegeneration of used liquids
• C01B 3/56 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solidsRegeneration of used solids

Abstract

At a liquid cryogen depot, gaseous cryogen from non-completely filled short trailers is used for pressurizing jumbo trailers, from which liquid cryogen is caused to flow into empty trailers through pressure differential.

IPC Classes  ?

• F17C 6/00 - Methods or apparatus for filling vessels not under pressure with liquefied or solidified gases

Abstract

z where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers
• H01L 21/3105 - After-treatment
• H01L 29/66 - Types of semiconductor device
• H10D 64/01 - Manufacture or treatment

Abstract

2424242422 ranges from 50% to 90%.

IPC Classes  ?

• C22B 3/08 - Sulfuric acid
• C22B 15/00 - Obtaining copper

Abstract

Heat is transferred from a first portion of liquid hydrogen to a flow of a heat transfer fluid at a first heat exchanger (11) through heat exchange with a heat transfer fluid to produce a flow of vaporized hydrogen and a warmed flow of heat transfer fluid. The flow of vaporized hydrogen is combined with a second portion of liquid hydrogen in amounts designed to produce a combined flow with a desired temperature, the combined flow being used to fill one or more buffer vessels (19). Heat is also transferred at a second heat exchanger from a stream of pressurized hydrogen from the at least one buffer vessel (19) to the cooled flow of heat transfer fluid to produce a cooled flow of pressurized hydrogen that is used to fill tanks of fuel cell electric vehicles.

IPC Classes  ?

• F17C 5/06 - Methods or apparatus for filling pressure vessels with liquefied, solidified, or compressed gases for filling with compressed gases
• F17C 9/04 - Recovery of thermal energy

Abstract

12345672891010)=O. The disclosure describes use of L to form liganded metallic complexes ML with a metal M. The disclosure describes use of ML for vapor deposition processes.

IPC Classes  ?

• C07C 225/06 - Compounds containing amino groups and doubly-bound oxygen atoms bound to the same carbon skeleton, at least one of the doubly-bound oxygen atoms not being part of a —CHO group, e.g. amino ketones having amino groups bound to acyclic carbon atoms of the carbon skeleton the carbon skeleton being saturated and acyclic
• C07F 1/02 - Lithium compounds

Abstract

A method can include: providing the existing SMR, wherein the SMR was formerly used to produce hydrogen from a hydrocarbon; and improving the nitridation resistance of the inner surface of the equipment by adding a protective layer to an inner surface of equipment to be used in the existing SMR, wherein the equipment is selected from a catalyst tube, feed piping, a feed preheater, process gas heat exchangers, and combination thereof. The hydrogen production facility can include a reformer configured to catalytically convert a feed stream into a product stream comprising hydrogen, means for providing the feed stream to the reformer from an ammonia source, wherein the feed stream comprises at least 90% of ammonia, wherein the plurality of catalyst tubes comprise a nitridation protective layer on an inner surface of the catalyst tubes.

IPC Classes  ?

• C01B 3/02 - Production of hydrogen or of gaseous mixtures containing hydrogen
• C01B 3/04 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of inorganic compounds, e.g. ammonia
• B01D 53/58 - Ammonia

Abstract

A method for heating a furnace with an ammonia-fired burner producing a stable flame including heating a first stream of ammonia through heat exchange with a stream of flue gas, thereby producing a heated first stream of ammonia. Feeding the heated first stream of ammonia to an ammonia cracker to produce a stream of cracked ammonia. Heating a stream of air through heat exchange with the stream of flue gas at a second heat exchanger to produce a heated stream of air. Feeding the heated stream of air to a burner. Feeding a second stream of ammonia to the burner. And feeding the stream of cracked ammonia to the burner for injection into the combustion space to produce a pilot flame through combustion of the injected stream of cracked ammonia and amounts of the injected heated stream of air.

IPC Classes  ?

• F23K 5/08 - Preparation of fuel
• F23K 5/20 - Preheating devices
• F23K 5/22 - Vaporising devices
• F23D 14/00 - Burners for combustion of a gas, e.g. of a gas stored under pressure as a liquid
• F23D 14/66 - Preheating the combustion air or gas
• F23K 5/00 - Feeding or distributing other fuel to combustion apparatus

Abstract

A method for operating a furnace, the method including the steps of: combusting fuel with oxidant, thereby generating thermal energy and fumes, heating the furnace with a first part of the thermal energy generated in step a, evacuating the generated fumes from the furnace at a temperature of at least 900° C., the evacuated fumes containing a second part of the thermal energy generated in step a, and using the second part of the thermal energy generated in step a for heating the oxidant and as a heat source for cracking ammonia in a cracker into a mixture including hydrogen, nitrogen and un-cracked ammonia, at least part of the mixture produced in step d-ii being combusted as fuel in step a with at least part of the heated oxidant produced in step d-i.

IPC Classes  ?

• C03B 5/237 - Regenerators or recuperators specially adapted for glass-melting furnaces
• F23L 15/04 - Arrangements of recuperators
• F23J 15/04 - Arrangements of devices for treating smoke or fumes of purifiers, e.g. for removing noxious material using washing fluids
• F27D 17/00 - Arrangements for using waste heatArrangements for using, or disposing of, waste gases
• C01B 3/04 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of inorganic compounds, e.g. ammonia
• B01D 53/56 - Nitrogen oxides
• B01D 53/79 - Injecting reactants
• C03B 5/225 - Refining

Abstract

A method for forming a high aspect ratio (HAR) structure during a HAR etch process, the method comprises sequentially or simultaneously exposing the substrate to a vapor of an etchant including one or more hydrofluorocarbon or fluorocarbon compounds or one or more hydrogen-containing molecules and an additive compound, the substrate having a film disposed thereon and a patterned mask layer disposed on the film; activating a plasma to produce activated one or more hydrofluorocarbon or fluorocarbon compounds or activated one or more hydrogen-containing molecules and an activated additive compound; and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compounds or the activated one or more hydrogen-containing molecules and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

A method for irrigation of a crop capable of producing Cannabidiol (CBD) comprises irrigating the crop with a nanobubble hydrogen rich water (HRW-nano), whereby a concentration of CBD in the crop increased as a result of irrigating with the HRW-nano, compared to irrigation with an irrigation water having the same composition except without added hydrogen (control irrigation).

IPC Classes  ?

• C05D 9/00 - Other inorganic fertilisers
• C05G 5/23 - Solutions
• A01C 23/04 - Distributing under pressureDistributing mudAdaptation of watering systems for fertilising-liquids
• A01C 21/00 - Methods of fertilising

Abstract

Disclosed are indium (In)-containing film forming compositions comprising In(III)-containing precursors that contain halogens, methods of synthesizing them and methods of using them to deposit the indium-containing films and/or indium-containing alloy film. The disclosed In(III)-containing precursors contain chlorine with nitrogen based ligands. In particular, the disclosed In(III)-containing precursors contains 1 or 2 amidinate ligands, 1 or 2 iminopyrrolidinate ligands, 1 or 2 amido amino alkane ligands, 1 or 2 μ-diketiminate ligands or a silyl amine ligand. The disclosed In(III)-containing precursors are suitable for vapor phase depositions (e.g., ALD, CVD) of the indium-containing films and/or indium-containing alloy films.

IPC Classes  ?

• C07F 5/00 - Compounds containing elements of Groups 3 or 13 of the Periodic Table
• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
• C23C 16/40 - Oxides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

A method for controlling the velocity of a pipeline pig, the method including, introducing a pressurized gas into a section of pipeline to be treated and maintaining the velocity of a smart pipeline pig at a predetermined velocity by regulating the pressurized gas to a predetermined volume. A method for controlling the velocity of a pipeline pig, the method including fluidically connecting a first skid to a first end of a section of pipeline to be treated, fluidically connecting a second skid to a second end of the section of pipeline to be treated, introducing a pressurized gas into the section of pipeline to be treated via the first skid, launching a smart pipeline pig into the section of pipeline to be treated, and maintaining the velocity of the smart pipeline pig at a predetermined velocity by regulating the pressurized gas to a predetermined volume.

IPC Classes  ?

• G05D 13/62 - Control of linear speedControl of angular speedControl of acceleration or deceleration, e.g. of a prime mover characterised by the use of electric means, e.g. use of a tachometric dynamo, use of a transducer converting an electric value into a displacement
• F16L 55/38 - Constructional aspects of the propulsion means, e.g. towed by cables driven by fluid pressure

Abstract

Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

IPC Classes  ?

• C08G 77/62 - Nitrogen atoms
• C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms

Abstract

Methods for forming a Group V-containing film comprise: a) exposing a substrate to a vapor of a Group V (five)-containing film forming composition; b) exposing the substrate to a co-reactant; and C) repeating the steps of a) and b) until a desired thickness of the Group V (five)-containing film is deposited on the substrate using a vapor deposition process, wherein the Group V (five)-containing film forming composition comprises a precursor having the formula: (Formula should be inserted here) wherein M is Group V (five) element, vanadium (V), niobium (Nb), or tantalum (Ta); R1to R8166 alkyl group, a fluoro group, an alkylsilyl group, a germyl group, an alkylamide or an alkylsilylamide; m = 1 to 5, n = 1 to 5.

IPC Classes  ?

• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
• C23C 16/40 - Oxides

Abstract

Methods for forming a Group V-containing film comprise: a) exposing a substrate to a vapor of a Group V (five)-containing film forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the Group V (five)-containing film is deposited on the substrate using a vapor deposition process, Methods for forming a Group V-containing film comprise: a) exposing a substrate to a vapor of a Group V (five)-containing film forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the Group V (five)-containing film is deposited on the substrate using a vapor deposition process, wherein the Group V (five)-containing film forming composition comprises a precursor having the formula: Methods for forming a Group V-containing film comprise: a) exposing a substrate to a vapor of a Group V (five)-containing film forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the Group V (five)-containing film is deposited on the substrate using a vapor deposition process, wherein the Group V (five)-containing film forming composition comprises a precursor having the formula: wherein M is Group V (five) element, vanadium (V), niobium (Nb), or tantalum (Ta); R1 to R8 each is H, a C1-C6 alkyl group, a fluoro group, an alkylsilyl group, a germyl group, an alkylamide or an alkylsilylamide; m=1 to 5, n=1 to 5. Methods for forming a Group V-containing film comprise: a) exposing a substrate to a vapor of a Group V (five)-containing film forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the Group V (five)-containing film is deposited on the substrate using a vapor deposition process, wherein the Group V (five)-containing film forming composition comprises a precursor having the formula: wherein M is Group V (five) element, vanadium (V), niobium (Nb), or tantalum (Ta); R1 to R8 each is H, a C1-C6 alkyl group, a fluoro group, an alkylsilyl group, a germyl group, an alkylamide or an alkylsilylamide; m=1 to 5, n=1 to 5.

IPC Classes  ?

• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• C23C 16/40 - Oxides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
• H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
• H01M 4/36 - Selection of substances as active materials, active masses, active liquids
• H01M 4/58 - Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFySelection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates

Abstract

A heat exchanger including a shell extending in a longitudinal direction D from a first end to a second end and including a mantle extending from the first end to the second end, and a solid inner core made of a core material and located inside the shell, the core extending in direction D from a first extremity towards the first end to a second extremity towards the second end. Whereby, at least one first flow path is provided inside the core, each first flow path extending from the first extremity to the second extremity of the core, n circuitous second flow paths extend through the core and/or between the core and the mantle, so that the at least one first flow path is surrounded by the n second flow paths over a non-zero rectilinear distance ΔL in direction D, n being an integer greater than 1.

IPC Classes  ?

• F28D 7/02 - Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being helically coiled

Abstract

In described embodiments, methods for selective etching (thermal etching) of metals, especially molybdenum- and tungsten-containing materials, and titanium nitride, using thionyl chloride (SOCl2) as an etching gas at low temperatures and low pressure without a need of plasma, for device manufacturing processes and for process chamber cleanings are disclosed. Methods for cleaning reaction product deposits from interior surface of a reactor chamber or from a substrate within said reaction chamber using thionyl chloride (SOCl2) at low temperatures and low pressure without a need of plasma are also disclosed. An additional co-reactant such as hydrogen may be used in combination with thionyl chloride. The processes are carried out in temperature ranging from approximately 150° C. to approximately 600° C., pressure under<100 Torr without the need of a plasma-activation.

IPC Classes  ?

• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The disclosed lanthanide precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and at least one bidentate ligand. These precursors are suitable for depositing lanthanide containing films.

IPC Classes  ?

• C07C 49/12 - Ketones containing more than one keto group

Abstract

2236754222222, and/or COS. These steps are repeated between a partial etch process (polymer creating) and polymer cleaning step (cycle etching).

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

2, and/or COS. These steps are repeated between a partial etch process (polymer creating) and polymer cleaning step (cycle etching).

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers

Abstract

The disclosed lanthanide precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and at least one bidentate ligand. These precursors are suitable for depositing lanthanide containing films.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C07F 5/00 - Compounds containing elements of Groups 3 or 13 of the Periodic Table
• C23C 16/40 - Oxides

Abstract

A hydrogen feed stream is introduced into a primary refrigeration system of a precooling system and cooling the hydrogen stream to a first precooling temperature. From there, the precooled hydrogen stream is then introduced to a secondary refrigeration system of the precooling system and cooling the precooled hydrogen stream to a second temperature. Next, the cooled hydrogen stream is then liquefied in the liquefaction system to produce liquid hydrogen. The refrigeration is provided by expansion of a pressurized gaseous nitrogen stream and vaporization of a liquid nitrogen stream that is sourced from a nearby air separation unit.

IPC Classes  ?

• F25J 1/00 - Processes or apparatus for liquefying or solidifying gases or gaseous mixtures

Abstract

A hydrogen feed stream is introduced into a primary refrigeration system of a precooling system and cooling the hydrogen stream to a first precooling temperature. From there, the precooled hydrogen stream is then introduced to a secondary refrigeration system of the precooling system and cooling the precooled hydrogen stream to a second temperature. Next, the cooled hydrogen stream is then liquefied in the liquefaction system to produce liquid hydrogen.

IPC Classes  ?

• F25J 1/00 - Processes or apparatus for liquefying or solidifying gases or gaseous mixtures

Abstract

321614323232n32n32233).

IPC Classes  ?

• C23C 16/40 - Oxides

Abstract

Heat is transferred from a flow of liquid hydrogen to a flow of a heat transfer fluid at a first heat exchanger to produce a warmed flow of pressurized hydrogen and a cooled flow of heat transfer fluid. Heat is also transferred at a second heat exchanger, to the cooled flow of heat transfer fluid, from a flow of pressurized hydrogen that is derived from one or more buffer vessels filled by the warmed flow of pressurized hydrogen and/or the warmed flow of pressurized hydrogen from the first exchanger to produce a cooled flow of pressurized hydrogen that is used to fill tanks of fuel cell electric vehicles.

IPC Classes  ?

• F17C 5/00 - Methods or apparatus for filling pressure vessels with liquefied, solidified, or compressed gases

Abstract

A CMS membrane module includes plurality of hollow fiber CMS membranes that are enclosed within an open cylindrical shell whose ends are embedded in tubesheets. The shell is concentrically disposed within an open cylindrical pressure vessel whose open ends are covered by and secured by end caps. The shell includes a feed fluid inlet formed therein between the tubesheets and a retentate outlet in between one of the tubesheets and an adjacent end cap. A retentate seal is formed between the shell and the pressure vessel at a postion between the tubesheets. A permeate seal is formed between the pressure vessel and the tubesheet that is adjacent a permeate port of the module. A structure made up of the CMS membranes, shell, tubesheets, and seals is slidable within the pressure vessel and not fixed in place in relation to the pressure vessel and end caps.

IPC Classes  ?

• B01D 63/02 - Hollow fibre modules
• B01D 71/02 - Inorganic material

Abstract

33-ma2a+1m33-n-pa2a+1nb2b+1pa2a+1b2b+1c2c+111010, linear, branched or cyclic alkyl, alkenyl, alkynyl group. The synthesis methods include one-step, two-step or three-step reaction(s) between halo(poly)silane(s) and a tris(trialkylsilyl) derivative of A or a one-pot mixing reaction between a mixture of two or three halo(poly)silanes and the tris(trialkylsilyl) derivative of A. The deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, Epitaxy, or the like.

IPC Classes  ?

• C01B 33/00 - SiliconCompounds thereof
• C07F 9/22 - Amides of acids of phosphorus
• C07F 9/68 - Arsenic compounds without As—C bonds
• C07F 9/90 - Antimony compounds

Abstract

A method and apparatus for the liquefaction of hydrogen is provided. The can include the steps of: precooling a hydrogen feed stream in a precooling cold box having a heat exchanger disposed therein to form a cooled hydrogen stream, wherein the heat exchanger is configured to cool down the feed stream within the precooling cold box by indirect heat exchange between the hydrogen feed stream and a precooling refrigerant; and withdrawing the cooled hydrogen stream from the precooling cold box; introducing the cooled hydrogen stream to a plurality of liquefaction cold boxes, wherein the cooled hydrogen stream liquefies within the plurality of liquefaction cold boxes by indirect heat exchange against a liquefaction refrigerant to form a product hydrogen stream in each of the plurality of liquefaction cold boxes, wherein the product hydrogen stream is in liquid form or pseudo-liquid form wherein there are M total precooling cold boxes and N total liquefaction cold boxes, wherein M is less than N.

IPC Classes  ?

• F25J 1/00 - Processes or apparatus for liquefying or solidifying gases or gaseous mixtures

Abstract

33-ma2a+1m,33-n-pa2a+1nb2b+1pa2a+1b2b+1c2c+111010 linear, branched or cyclic alkyl, alkenyl, alky ny I group. The synthesis methods include one-step, two-step or three-step reaction(s) between halo(poly)silane(s) and a tris(trialkylsilyl) derivative of A or a one-pot mixing reaction between a mixture of two or three halo(poly)silanes and the tris(trialkylsilyl) derivative of A. The deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, Epitaxy, or the like.

IPC Classes  ?

• C23C 16/24 - Deposition of silicon only
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth

Abstract

5 hydrocarbon.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
• C23C 16/56 - After-treatment

Abstract

nxyzee, wherein 0 ≤ n ≤ 10, 0 ≤ x ≤ 21, 0 ≤ y ≤ 21, 1 ≤ z ≤ 4 and 1 ≤ e ≤ 2; activating a plasma to produce an activated oxygen and iodine-containing etching compound; and allowing an etching reaction to proceed between the activated oxygen and iodine-containing etching compound and the silicon-containing film to selectively etch the silicon-containing film from the patterned mask layer, thereby forming a patterned structure.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

A method for forming a Si-free metal-containing film on a substrate comprises: applying a film-forming composition onto a substrate through a wet coating process; and baking the substrate with the film-forming composition thereon under a temperature ranging from about 50°C to about 1500°C to form the Si-free metal-containing film. The film-forming composition comprises a metal-containing precursor; at least one cross-linker compound comprising two or more linking groups; and a solvent.

IPC Classes  ?

• C09D 1/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances

Abstract

axyzxyzaxyyFzN- R1, where x=1-6, y=0-13, z-0-13, and R11-55 hydrocarbon.

IPC Classes  ?

• C23C 16/32 - Carbides

Abstract

The disclosure generally describes a method for venting pressurized hydrogen gas from a device for simulating a refueling operation for a fuel cell electric vehicle (FCEV).

IPC Classes  ?

• F17C 13/02 - Special adaptations of indicating, measuring, or monitoring equipment

Abstract

3423x23x323x3423x323x223223x322.

IPC Classes  ?

• C01G 55/00 - Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum

Abstract

Platinum group metal containing chemical precursors suitable for vapor deposition are disclosed. Methods of using these precursors for Platinum depositions are also disclosed. The chemical precursors and methods are particularly suitable for depositing catalyst material on electrodes.

IPC Classes  ?

• C07F 15/00 - Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
• C07C 11/06 - Propene
• C07C 13/15 - Monocyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with a five-membered ring with a cyclopentadiene ring
• C07C 211/22 - Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms of an acyclic unsaturated carbon skeleton containing at least two amino groups bound to the carbon skeleton

Abstract

This invention provides a novel solution to form an artificial interphase on the electrode to protect it from fast declining electrochemical behaviors, by depositing Metal Oxides Layer, by ALD or CVD. Metals discussed here are IVA-VIA elements (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W). The film needs to be thin, possibly discontinuous, and lithium ion conductive enough, so that the addition of this thin film interface allows fast lithium ion transfer at the interface between electrode and electrolyte.

IPC Classes  ?

• H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulatorsProcesses of manufacture thereof
• H01M 4/36 - Selection of substances as active materials, active masses, active liquids
• H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy

Abstract

The present invention is at least industrially applicable to recovery of Hydrogen boil off gas during tube trailer refilling with liquid Hydrogen by a sequences of steps that redirects gaseous Hydrogen from the tube trailer to a Hydrogen liquefaction plant.

IPC Classes  ?

• F17C 6/00 - Methods or apparatus for filling vessels not under pressure with liquefied or solidified gases

Abstract

The disclosure generally describes an apparatus for simulating a refueling operation for a fuel cell electric vehicle (FCEV). The fuel is compressed hydrogen gas dispensed by hydrogen refueling station (HRS).

IPC Classes  ?

• F17C 13/02 - Special adaptations of indicating, measuring, or monitoring equipment

Abstract

2222). The permeate stream is recycled to the process, optionally after compression. The method is auto-refrigerated, i. e. no external refrigerant is used to provide cooling below 0°C.

IPC Classes  ?

• C10L 3/10 - Working-up natural gas or synthetic natural gas
• B01D 53/00 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols
• B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
• F25J 3/02 - Processes or apparatus for separating the constituents of gaseous mixtures involving the use of liquefaction or solidification by rectification, i.e. by continuous interchange of heat and material between a vapour stream and a liquid stream
• F25J 3/06 - Processes or apparatus for separating the constituents of gaseous mixtures involving the use of liquefaction or solidification by partial condensation

Abstract

The present invention relates to a method for improving stability of a hydrogen gaseous dispensing system. An example of such system is hydrogen powered vehicle fuel filling station. Vehicle is filled by multiple high pressure gaseous hydrogen tubes, usually one tube at a time. For safety and reliability reasons a control requirement for such system is to be able to deliver the hydrogen at constant rate to the fuel tank so that its rate of pressure increase stays constant during entire filling process. A dual pressure regulator arrangement is proposed to better maintain flow continuity and/or pressure during tube switching.

IPC Classes  ?

• F17C 5/00 - Methods or apparatus for filling pressure vessels with liquefied, solidified, or compressed gases
• F17C 5/06 - Methods or apparatus for filling pressure vessels with liquefied, solidified, or compressed gases for filling with compressed gases

Abstract

A cryogen storage vessel at an installation is filled with liquid cryogen from a liquid cryogen storage tank that has a pressure lower than that of the vessel. After headspaces of the vessel and tank are placed in fluid communication with another via a gas transfer vessel and are pressure-balanced, a pump in a liquid transfer line connected between the tank and the vessel is operated to transfer amounts of liquid cryogen from the tank to the vessel via the liquid transfer line and pump as amounts of gaseous cryogen are transferred, through displacement by the pumped cryogenic liquid, from the vessel to the tank.

IPC Classes  ?

• F17C 6/00 - Methods or apparatus for filling vessels not under pressure with liquefied or solidified gases

Abstract

[Purpose] To provide a method of forming a ruthenium-containing layer and a laminate, wherein the ruthenium-containing layer is selectively formed, as a protective layer capable of suppressing generation of etching residues, on a mask surface for pattern formation that is formed on a substrate, without the need for form ing a selective attractant element. [Solution] A method, which comprises a preparation step of providing a substrate having an oxidizable layer, and a deposition step of depositing a ruthenium-containing layer on the oxidizable layer by using a ruthenium tetraoxide through vapour deposition, wherein the oxidizable layer contains carbon atoms.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass

Abstract

Methods of plasma dry etching employing an etching gas mixture containing a compound that has a general formula: where 1 ≤ x ≤ 6, 1 ≤ y ≤ 9, 1 ≤ z ≤ 15, n = 1 or 2. In some embodiments, the compound contains one or more methyl group(s) and at least one methyl group is attached to the Si atom. The methods include HAR dry etching processes, selective dry etching processes and cyclic selective dry etching processes.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.

IPC Classes  ?

• C09D 183/14 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms

Abstract

Systems and methods are disclosed for treating wastewater, such as food and beverage industry wastewater, pulp and paper wastewater, textile wastewater, tannery wastewater, pharmaceutical wastewater, etc., which contains high concentration of COD along with high concentrations of nitrogen and phosphorus to yield a low COD output along with a low phosphorous output and a low nitrogen output. One system comprises a buffer tank, an anoxic tank, an oxic tank, and a membrane bioreactor tank fluidically connected in series with pure oxygen blown into the oxic tank.

IPC Classes  ?

• C02F 1/74 - Treatment of water, waste water, or sewage by oxidation with air
• C02F 1/72 - Treatment of water, waste water, or sewage by oxidation
• C02F 3/02 - Aerobic processes

Abstract

z where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers
• H01L 29/66 - Types of semiconductor device
• H01L 21/3105 - After-treatment

Abstract

A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula: (NR8R9)(NR1R2)Ga[(R3R4xx(R5R6)(NR722Ga[(R3R4xx(R5R6)(NR7)] (II) wherein, R1to R9are independently selected from H, Me, Et, nPr, IPr, nBu, iBu, sBu, or tBu; R1to R9 may be the same or different; x = 2, 3, 4, preferably x = 2; Cy-N refers to saturated N-containing rings or unsaturated N-containing rings.

IPC Classes  ?

• C23C 16/40 - Oxides

Abstract

22, wherein M is Cr, Mo, or W; arene is wherein R1, R2, R3, R4, R5and R6161616166 alkenylphenyl, or -SIXR7R8, wherein X is selected from F, Cl, Br, I, and R7, R816166 alkenyl.

IPC Classes  ?

• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Abstract

The disclosure relates to a manufactured composition, material or device comprising at least two different nonradioactive isotope atoms. Each nonradioactive isotope atom is present in an amount sufficient to increase the total amount of the nonradioactive isotope atom above the total amount found in the manufactured composition, material or device in the absence of adding the nonradioactive isotope atom to increase said total amount. The ratio(s) of the at least two nonradioactive isotopes in the manufactured composition, material or device are measurably different than the ratio(s) found in the manufactured composition, material or device in the absence of adding the nonradioactive isotope atom to increase said total amount.

IPC Classes  ?

• A61K 47/02 - Inorganic compounds
• G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
• G01N 33/15 - Medicinal preparations