The present invention provides a thick-film paste composition for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and an oxide composition dispersed in an organic medium that includes an organopolysiloxane and a fluorine-containing degradation agent.
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
The present invention provides a thick-film paste composition comprising an electrically conductive metal and an oxide composition dispersed in an organic medium. The paste composition is printed on the front side of a solar cell device having one or more insulating layers and fired to form an electrode, and is suitable for devices having both highly and lightly doped emitter structures.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/0288 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
4.
Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices
The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
The present invention provides a thick-film paste composition for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and an oxide composition dispersed in an organic medium that includes an organopolysiloxane and a fluorine-containing degradation agent.
The present invention provides a thick-film paste composition for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and an oxide composition dispersed in an organic medium that includes microgel particles and an organopolysiloxane.
C03C 8/22 - EnamelsGlazesFusion seal compositions being frit compositions having non-frit additions containing two or more distinct frits having different compositions
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
C03C 8/16 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions with vehicle or suspending agents, e.g. slip
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
The present invention provides a thick-film paste composition for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and a dual-frit oxide composition dispersed in an organic medium.
Disclosed herein are solar cells comprising semiconductor substrates and Cu electrodes attached thereto, wherein, the Cu electrodes are derived from conductive pastes containing powder mixtures of Cu particles and crystalline Ge particles and glass frits dispersed in organic media.
Disclosed herein are copper-containing (Cu-containing) conductive pastes, copper (Cu) electrodes formed by firing the Cu-containing conductive paste over a substrate, and articles comprising a structural element with such Cu electrodes, wherein, the Cu-containing conductive paste contains a powder of coated Cu particles and glass frit dispersed in an organic medium.
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01L 31/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
A method for manufacturing a back-contact solar cell, comprising the steps of: (i) preparing a semiconductor substrate comprising an n-layer and a p-layer at the back side of the semiconductor substrate; (ii) applying a conductive paste on both the n-layer and the p-layer, wherein the conductive paste comprises a silver (Ag) powder, a palladium (Pd) powder, an additional metal powder selected from the group consisting of molybdenum (Mo), boron (B) and a mixture thereof, a glass frit, and an organic medium; and (iii) firing the applied conductive paste.
B05D 3/00 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
12.
Conductive paste composition and semiconductor devices made therewith
A conductive paste composition comprises (i) an inorganic powder comprising at least a conductive powder, (ii) at least one microgel polymer, and (iii) a solvent. The paste composition may be used in a process for manufacturing an electrical device comprising: preparing a substrate; applying the conductive paste onto the substrate in a preselected pattern; and heating the applied conductive paste to form a conductive structure that provides an electrode for connecting the device. The paste composition beneficially permits the formation of narrow, high aspect ratio features in the conductive structure.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
C03C 8/16 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions with vehicle or suspending agents, e.g. slip
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
C03C 17/04 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with glass by fritting glass powder
C03C 17/34 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C03C 8/14 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions
C03C 8/02 - Frit compositions, i.e. in a powdered or comminuted form
C03C 8/22 - EnamelsGlazesFusion seal compositions being frit compositions having non-frit additions containing two or more distinct frits having different compositions
A method of manufacturing an electrical device comprising steps of: preparing a substrate; applying a conductive paste onto the substrate, wherein the conductive paste comprises (i) an inorganic powder comprising at least a conductive powder, (ii) an organic polymer, (iii) a solvent and (iv) a gellant selected from the group consisting of a polyalkyleneoxy terminated polyamide (PAOPA), an ester terminated polyamide (ETPA), polyether polyamine (PEPA) and a mixture thereof; and heating the applied conductive paste to form an electrode.
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers and a method for doing so. The thick-film paste comprises a source of an electrically conductive metal and a lead-tungsten-based oxide dispersed in an organic medium. The invention also provides a semiconductor device comprising an electrode formed from the thick-film paste.
A method for manufacturing back contact solar cells, comprising steps of: (a) providing a silicon substrate doped with phosphorus; (b) doping the front surface and the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a front side p+ region on the front surface and a rear side p+ region on the rear surface; (c) forming a silicon dioxide layer on the front surface and the rear surface; (d) depositing a phosphorus-containing doping paste on the silicon dioxide layer of the rear surface in a second pattern; (e) heating the silicon substrate in order to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming a rear side n+ region on the rear surface of the silicon substrate beneath the phosphorus-containing doping paste; and (f) removing the silicon dioxide layer from the silicon substrate.
A method of manufacturing a solar cell electrode comprising steps of: preparing a semiconductor substrate, applying a conductive paste onto the light receiving side of the semiconductor substrate, wherein the conductive paste comprises (i) a conductive powder, (ii) a glass frit, (iii) an organic polymer comprising an elastomer and (iv) an organic solvent; and firing the applied conductive paste.
3, metal additives and an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a soar cell comprising such an electrode. The paste compositions provide a solderable electrode, particularly useful for forming solar cell back side buss bars on an aluminum layer that covers the entire back side surface of the solar cell.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
C03C 8/08 - Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
C03C 8/16 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions with vehicle or suspending agents, e.g. slip
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
C03C 8/22 - EnamelsGlazesFusion seal compositions being frit compositions having non-frit additions containing two or more distinct frits having different compositions
18.
Aluminum-tin paste and its use in manufacturing solderable electrical conductors
The present invention is directed to a paste composition comprising Al and Sn dispersed in an organic medium and to paste compositions that provide a solderable electrode. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste compositions that provide a solderable electrode are particularly useful for forming a solar cell back side solderable electrode.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
B23K 35/02 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
B23K 35/28 - Selection of soldering or welding materials proper with the principal constituent melting at less than 950°C
Disclosed herein is an electrically conductive adhesive composition and its use in solar cell modules, wherein the electrically conductive adhesive comprises a fluoroelastomer matrix and dispersed in the fluoroelastomer matrix about 40-90 wt % of conductive particles, with the wt % of all components comprised in the compositions totaling to 100 wt %.
Disclosed herein is an electrically conductive adhesive composition and its use in solar cell modules, wherein the electrically conductive adhesive comprises a polymer matrix and dispersed in the polymer matrix about 40-90 wt % of conductive particles, with the wt % of all components comprised in the compositions totaling to 100 wt %, and wherein the polymer matrix comprises or is formed of a blend of at least one ethylene/alkyl (meth)acrylate copolymer elastomer and at least one ethylene vinyl acetate copolymer at a weight ratio ranging from about 10:90 to about 70:30.
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances oxides
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
23.
Lead-free conductive paste composition and semiconductor devices made therewith
A lead-free conductive paste composition contains a source of an electrically conductive metal, a fusible material, an optional additive, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the lead-free paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and fusible material.
A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
25.
Conductive paste composition and semiconductor devices made therewith
A conductive paste composition contains a source of an electrically conductive metal, an alkaline-earth-metal boron bismuth oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and alkaline-earth-metal boron bismuth oxide.
A conductive paste composition contains a source of an electrically conductive metal, a boron lithium tellurium oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor device substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and establish electrical contact between it and the substrate.
A method of manufacturing a solar cell comprising steps of: (a) preparing a substrate comprising a semiconductor layer and a passivation layer formed at least on the back side of the semiconductor layer, wherein the passivation layer on the back side comprises one or more openings; (b) forming an aluminum (Al) conductor pattern at least in the openings of the passivation layer on the back side by applying an Al paste, wherein the Al paste comprises: (i) an Al powder, (ii) a glass frit, (iii) a zirconium carbide (ZrC) powder, and (iv) an organic medium; and (c) firing the Al conductor pattern.
A conductive paste composition contains a source of an electrically conductive metal, a lead-tellurium-based oxide, a discrete oxide of an adhesion promoting element, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and lead-tellurium-based oxide.
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
B23K 35/36 - Selection of non-metallic compositions, e.g. coatings, fluxesSelection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
B23K 35/02 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
29.
Process for forming an electrically conductive structure on a substrate
A conductive paste composition contains a source of an electrically conductive metal, an alkaline-earth-metal boron tellurium oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor device substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and establish electrical contact between it and the device.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H05K 3/12 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using printing techniques to apply the conductive material
A method of manufacturing a solar electrode comprising steps of:(a) stencil printing a conductive paste onto a front side of a semiconductor substrate through a printing mask comprising: (i) 60 wt % to 95 wt % of a conductive powder, (ii) 0.1 wt % to 10 wt % of glass frit, (iii) 3 wt % to 30 wt % of an organic medium, (iv) 0.4 wt % to 1.7 wt % of an amide compound, based on the total weight of the conductive paste and (b) firing the applied conductive paste to form an electrode.
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
31.
Solar cell comprising a p-doped silicon wafer and an aluminum electrode
A conductive silver via paste comprising particulate conductive silver, a vanadium-phosphorus-antimony-zinc-based-oxide, a tellurium-boron-phosphorus-based-oxide or a tellurium-molybdenum-cerium-based-oxide and an organic vehicle is particularly useful in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. Also disclosed are metal-wrap-through silicon solar cells comprising the fired conductive silver paste.
The invention is directed to a polymer thick film conductive composition comprising (a) a conductive silver-coated copper powder; and (b) an organic medium comprising two different resins and organic solvent, wherein the ratio of the weight of the conductive silver-coated copper powder to the total weight of the two different resins is between 5:1 and 45:1.
The invention is further directed to a method of electrode grid and/or bus bar formation on thin-film photovoltaic cells using the composition and to cells formed from the method and the composition.
A method of manufacturing a thick-film electrode comprising steps of: (a) applying a conductive paste onto a substrate comprising, (i) 100 parts by weight of a conductive powder, wherein the conductive powder is 16 to 49 weight percent based on the weight of the conductive paste; (ii) 0.5 to 10 parts by weight of a metal additive comprising bismuth (Bi); (iii) 1 to 25 parts by weight of a glass frit; and (iv) 50 to 300 parts by weight of an organic medium; and (b) firing the applied conductive paste to form the thick-film electrode, wherein thickness of the thick-film electrode is 0.5 to 15 μm.
A photovoltaic cell such as a solar cell is disclosed. The cell comprises (a) a semiconductor substrate having a front surface, (b) one or more anti-reflection coating layers on the front surface of the semiconductor substrate, (c) a plurality of silver-containing fingers in contact with the one or more anti-reflection coating layers and in electrical contact with the semiconductor substrate; and (d) one or more base metal containing buss bars each in contact with the one or more anti-reflection coating layers and the silver-containing fingers. The base metal may be selected from one or more of copper, nickel, lead, tin, iron, indium, zinc, bismuth and cobalt. Methods for making photovoltaic cells with base metal containing buss bars are also disclosed.
H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
This invention provides a method of making a photovoltaic cell. The method uses an etching composition comprising one or more onium salts selected from the group consisting of iodonium salts and sulfonium and an organic medium to etch the anti-reflection coating. Also provided is a photovoltaic cell made by this method.
A composition for doping semiconductor materials, such as silicon, may contain a) a solvent and a) an inorganic salt of a phosphor containing acid dispersed in the solvent. Also disclosed are doping methods using such composition as well as methods of making the doping composition.
H01L 21/38 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
H01L 21/228 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
38.
Thick film silver paste and its use in the manufacture of semiconductor devices
The present invention is directed to an electroconductive silver thick film paste composition comprising Ag particles and a Bi—Cu—B—Zn-based glass frit dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste is particularly useful for forming a tabbing electrode.
A conductive silver via paste comprising particulate conductive silver, a vanadium-phosphorus-oxide and an organic vehicle is particularly useful in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. Also disclosed are metal-wrap-through silicon solar cells comprising the fired conductive silver paste.
A conductive paste composition contains a source of an electrically conductive metal, an alkaline-earth-metal boron tellurium oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor device substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and establish electrical contact between it and the device.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
A conductive paste composition contains a source of an electrically conductive metal, a Ti—Te—Li oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and establish electrical contact between it and the device.
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
42.
Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters
The present invention provides a process for using a thick-film conductive paste composition to form an electrode on a silicon semiconductor device, e.g, a photovoltaic cell, containing a lightly doped emitter. The thick-film paste comprises a source of an electrically conductive metal and a Pb—Te-based oxide dispersed in an organic medium. Also provided are devices made by the process and a photovoltaic cell comprising a lightly doped emitter and an electrode formed from the thick-film conductive paste composition.
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers and a method for doing so. The thick-film paste comprises a source of an electrically conductive metal and a lead-vanadium-based oxide dispersed in an organic medium. The invention also provides a semiconductor device comprising an electrode formed from the thick-film paste.
H01L 21/283 - Deposition of conductive or insulating materials for electrodes
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
C03C 8/16 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions with vehicle or suspending agents, e.g. slip
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
H05K 1/09 - Use of materials for the metallic pattern
A method of manufacturing a thick-film electrode comprising the steps of: applying onto a substrate a conductive paste comprising a conductive powder, a glass frit, 3.5 to 12.5 weight percent of an organic polymer, and a solvent, wherein the weight percent is based on the total weight of the conductive powder, the glass frit, and the organic polymer; firing the applied conductive paste to form the thick-film electrode, wherein thickness of the thick-film electrode is 1 to 10 μm; and soldering a wire to the thick-film electrode.
A lead-tellurium-lithium-titanium-oxide glass composition is useful as a component of a conductive silver paste. Especially useful are P-containing and V-containing lead-tellurium-lithium-titanium-oxide glass composition. Conductive silver via paste comprising particulate conductive silver and any of the lead-tellurium-lithium-titanium-oxide glass compositions of the invention can be used in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell.
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
C03C 8/20 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing titanium compoundsGlass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing zirconium compounds
C03C 8/24 - Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metalGlass solders
47.
Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a Pb-free bismuth-tellurium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
48.
Process of forming a grid electrode on the front-side of a silicon wafer
wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.
C03C 8/02 - Frit compositions, i.e. in a powdered or comminuted form
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/24 - Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metalGlass solders
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
A method for manufacturing a solar cell, comprising steps of: a) providing a semiconductor substrate having a light-receiving side and a back side, wherein a passivation layer is formed on the back side; b) forming a silver conductor pattern on the back side of the semiconductor substrate; c) forming an aluminum conductor pattern on the back side of the semiconductor substrate, at least part of the aluminum conductor pattern being superimposed on at least part of the silver conductor pattern; and d) firing the silver conductor pattern and the aluminum conductor pattern at the same time, thereby forming an electric contact between the semiconductor substrate and the aluminum conductor pattern by way of fire through in a region where the silver conductor pattern and the aluminum conductor pattern are superimposed.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
50.
Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and a lead-tellurium-boron-oxide dispersed in an organic medium.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/44 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/44 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
The present invention is directed to a thick film silver paste comprising (i) silver, (ii) copper, and (iii) a Pb—Te—O all dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste and a semiconductor device and, in particular, a solar cell comprising such an electrode. The electrodes provide good electrical performance.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
54.
Conductive paste composition with synthetic clay additive and its use in the manufacture of semiconductor devices
A conductive paste composition contains a source of an electrically conductive metal, a fusible material, a synthetic clay additive, and an optional etchant additive, dispersed in an organic medium. An article such as a photovoltaic cell is formed by a process having the steps of deposition of the paste composition on a semiconductor substrate by a process such as screen printing and firing the paste to remove the organic medium and sinter the metal and fusible material. The synthetic clay additive aids in establishing a low resistance electrical contact between the front side metallization and underlying semiconductor substrate during firing.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
55.
Back contact photovoltaic module with integrated circuitry
A back-contact solar cell module and a process for making such a solar cell module are provided. The module includes a porous wire mounting layer with a plurality of elongated electrically conductive wires mounted thereon. A polymeric encapsulant layer is provided between a rear surface of solar cells of the module and the porous wire mounting layer and is melted to adhere to the solar cells and penetrate the porous wire mounting layer. Back electrical contacts on the solar cells are electrically connected to the electrically conductive wires through the porous wire mounting layer.
A lead-free conductive paste composition contains a source of an electrically conductive metal, a fusible material, an optional additive, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the lead-free paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and fusible material.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
A solar cell, comprising: a doped silicon substrate, the silicon substrate comprising a front surface and a rear surface; a front phosphorous diffusion layer formed on the front surface; a front anti-reflective layer formed on the front phosphorous diffusion layer; a front metal electrode on the front surface in ohmic contact with the front phosphorous diffusion layer through the front anti-reflective layer; a rear passivation layer formed on the rear surface; a rear metal electrode in a pattern on the rear surface passing through the rear passivation layer; and a rear p+ diffusion area on the rear surface between the rear passivation layer and a boron-doped region of the silicon substrate, the rear p+ diffusion area surrounding the rear metal electrode.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
58.
Process of forming an aluminum p-doped surface region of a semiconductor substrate
wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.
H01L 21/44 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
H01L 21/225 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H01L 31/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps:
(1) providing an n-type semiconductor substrate,
(2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate,
(3) firing the dried aluminum paste, and
(4) removing the fired aluminum paste with water,
wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.
H01L 31/0288 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
60.
Thick film silver paste and its use in the manufacture of semiconductor devices
3 or a mixture thereof all dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste is particularly useful for forming a tabbing electrode.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The present invention is also directed to the bismuth-tellurium oxide that is a component of thick film pastes.
The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The present invention is also directed to the bismuth-tellurium oxide that is a component of thick film pastes.
The present invention relates to a method of manufacturing a solar cell electrode, comprising: preparing a semiconductor substrate having a preformed electrode on a front side, a back side, or both of the front and the back side of the semiconductor substrate; applying a conductive paste onto the preformed electrode, wherein the conductive paste comprises a conductive powder, an amorphous saturated polyester resin with glass transitional temperature (Tg) of 50° C. or lower, and an organic solvent; drying the applied conductive paste; putting a tab electrode on the dried conductive paste; and soldering the tab electrode.
A conductive paste composition contains a source of an electrically conductive metal, a lead-tellurium-based oxide, a discrete oxide of an adhesion promoting element, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and lead-tellurium-based oxide.
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
B23K 35/36 - Selection of non-metallic compositions, e.g. coatings, fluxesSelection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
B23K 35/02 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
65.
3 and their use in the manufacture of semiconductor devices
3 and mixtures thereof, and (iii) a glass frit all dispersed in an organic medium. The present invention is further directed to an electrode formed from the composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The electrodes provide good adhesion and good electrical performance.
The present invention is directed to an electrically conductive composition comprising (a) an electrically conductive metal; (b) a Rh-containing component; (c) a Pb—Te—O; and (d) an organic medium; wherein the electrically conductive metal, the Rh-containing compound, and the Pb—Te—O are dispersed in the organic medium. The present invention is further directed to an electrode formed from the composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. Also provided is a process for forming such an electrode. The electrodes provide good adhesion and good electrical performance.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
The present invention is directed to an electroconductive thick film paste composition comprising Ag and a lead-tellurium-lithium-titanium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.
A paste composition contains an electrically conductive silver powder, one or more glass frits or fluxes, and a lithium compound dispersed in an organic medium. The paste is useful in forming an electrical contact on the front side of a solar cell device having an insulating layer. The lithium compound aids in establishing a low-resistance electrical contact between the front-side metallization and underlying semiconductor substrate during firing.
A lead-free paste composition contains an electrically conductive silver powder, one or more glass frits or fluxes, and a lithium compound dispersed in an organic medium. The paste is useful in forming an electrical contact on the front side of a solar cell device having an insulating layer. The lithium compound aids in establishing a low-resistance electrical contact between the front-side metallization and underlying semiconductor substrate during firing.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
70.
Solderable polymer thick film conductive electrode composition for use in thin-film photovoltaic cells and other applications
The invention is directed to a polymer thick film conductive composition comprising (a) a conductive silver-coated copper powder; and (b) an organic medium comprising two different resins and organic solvent, wherein the ratio of the weight of the conductive silver-coated copper powder to the total weight of the two different resins is between 5:1 and 45:1.
The invention is further directed to a method of electrode grid and/or bus bar formation on thin-film photovoltaic cells using the composition and to cells formed from the method and the composition.
A ceramic boron-containing dopant paste is disclosed. The ceramic boron-containing dopant paste further comprising a set of solvents, a set of ceramic particles dispersed in the set of solvents, a set of boron compound particles dispersed in the set of solvents, a set of binder molecules dissolved in the set of solvents. Wherein, the ceramic boron-containing dopant paste has a shear thinning power law index n between about 0.01 and about 1.
C04B 35/46 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on titanium oxides or titanates
C04B 35/636 - Polysaccharides or derivatives thereof
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
72.
Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines
The present invention is a thick film silver composition for use a solar cell device. The thick film paste composition comprises an electrically conductive silver powder, one or more glass frits, a nano-sized additive wherein the nano-sized additive is selected from metallic zinc, zinc alloys or a mixture of metallic zinc and zinc oxide, all dispersed in an organic medium.
A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances oxides
H01B 1/12 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances organic substances
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
H01L 21/38 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0288 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
A photovoltaic cell such as a solar cell is disclosed. The cell comprises (a) a semiconductor substrate having a front surface, (b) one or more anti-reflection coating layers on the front surface of the semiconductor substrate, (c) a plurality of silver-containing fingers in contact with the one or more anti-reflection coating layers and in electrical contact with the semiconductor substrate; and (d) one or more base metal containing buss bars each in contact with the one or more anti-reflection coating layers and the silver-containing fingers. The base metal may be selected from one or more of copper, nickel, lead, tin, iron, indium, zinc, bismuth and cobalt. Methods for making protovoltaic cells with base metal containing buss bars are also disclosed.
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
H01L 21/38 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions
78.
Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles
Disclosed are methods of forming multi-doped junctions, which utilize a nanoparticle ink to form an ink pattern on a surface of a substrate. From the ink pattern, a densified film ink pattern can be formed. The disclosed methods may allow in situ controlling of dopant diffusion profiles.
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/44 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
80.
Thick-film pastes containing lead—tellurium—lithium—oxides, and their use in the manufacture of semiconductor devices
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/44 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-titanium-oxide dispersed in an organic medium.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/44 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A p-type electrode on p+ layer of solar cell comprising, prior to firing; (a) Electrically conductive particles comprising silver particle having a particle size of 0.1 to 10 microns and added particle composed of a metal alloy containing a metal selected from the group consisting of Mo, Tc, Ru, Rh, Pd, W, Re, Os, Ir and Pt, (b) Glass frit, and (c) A resin binder, wherein the electrode is made from a fired conductive paste which is comprised of 40 to 90 wt % of the silver particle and 0.01 to 10 wt % of the added particle based on the weight of the paste.
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and a lead-tellurium-boron-oxide dispersed in an organic medium.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 21/44 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
+ layer of solar cell comprising, prior to firing; (a) Electrically conductive particles comprising silver particle having a particle size of 0.1 to 10 microns and added particle composed of silver particle coated with a metal selected from the group consisting of Mo, Tc, Ru, Rh, Pd, W, Re, Os, Ir and Pt, (b) Glass frit, and (c) A resin binder, wherein the electrode is made from a fired conductive paste which is comprised of 40 to 90 wt % of the silver particle and 0.01 to 10 wt % of the added particle based on the weight of the paste.
+ layer of solar cell comprising, prior to firing; (a) Electrically conductive particles comprising silver particle having a particle size of 0.1 to 10 microns and added particle composed of a metal particle supported by carbon particles, wherein the metal particle is selected from the group consisting of Mo, Tc, Ru, Rh, Pd, W, Re, Os, Ir and Pt particle, (b) Glass frit, and (c) A resin binder, wherein the electrode is made from a fired conductive paste which is comprised of 40 to 90 wt % of the silver particle and 0.01 to 10 wt % of the added particle based on the weight of the paste.
A method for producing a solar cell electrode, comprising the steps of: applying on at least part of a light-receiving surface of a semiconductor substrate a conductive paste comprising conductive component, glass frit, and resin binder, wherein the conductive component comprises alloy particles comprising silver and a metal selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Co; and firing the conductive paste.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
A method for producing a solar cell electrode, comprising the steps of: applying on at least part of a light-receiving surface of a semiconductor substrate a conductive paste comprising conductive component, glass frit, and resin binder, wherein the conductive component comprises silver particles and core-shell particles in which a metal selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Co is coated on a surface of silver or copper; and firing the conductive paste.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
+-type layer are formed in the opposite side from a sunlight receiving side, wherein an electrode formed on the opposite side comprises a conductive component comprising silver and an added metal selected from the group consisting of Mo, Tc, Ru, Rh, Pd, W, Re, Os, Ir and Pt.
wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C03C 8/02 - Frit compositions, i.e. in a powdered or comminuted form
C03C 8/10 - Frit compositions, i.e. in a powdered or comminuted form containing lead
C03C 8/24 - Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metalGlass solders
90.
Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/12 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances organic substances
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
C03C 8/12 - Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
A silicon nanoparticle fluid including a) a set of silicon nanoparticles present in an amount of between about 1 wt % and about 20 wt % of the silicon nanoparticie fluid; b) a set of HMW binder molecules present in an amount of between about 0 wt % and about 10 wt % of the silicon nanoparticle fluid; and c) a set of capping agent molecules, such that at least some capping agent molecules are attached to the set of silicon nanoparticles. Preferably, the silicon nanoparticle fluid is a shear thinning fluid.
B01J 13/00 - Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided forMaking microcapsules or microballoons
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
93.
Methods of forming a multi-doped junction with silicon-containing particles
2 gas at a second temperature and for a second time period, wherein a PSG layer is formed on the front substrate surface and on the densified film ink pattern; and heating the substrate in a drive-in ambient to a third temperature; wherein a first diffused region with a first sheet resistance is formed under the front substrate surface covered by the densified film ink pattern, and a second diffused region with a second sheet resistance is formed under the front substrate surface not covered with the densified film ink pattern, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
H01L 21/38 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions
94.
Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles
2 gas is between about 1:1 to about 1.5:1, at a second temperature of between about 700° C. and about 1000° C., and for a second time period of about 5 minutes to about 35 minutes. The method also includes heating the substrate in a drive-in ambient to a third temperature of between about 800° C. and about 1100° C.
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
95.
Glass compositions used in conductors for photovoltaic cells
The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. The thick film conductor compositions include one or more electrically functional powders and one or more glass frits dispersed in an organic medium. The thick film compositions may also include one or more additive(s). Exemplary additives may include metals, metal oxides or any compounds that can generate these metal oxides during firing.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
B32B 17/06 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance
96.
Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers
wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 21/283 - Deposition of conductive or insulating materials for electrodes
This invention relates to an electrode used in a solar cell that exhibits good conductivity at the N layer and P layer and to a conductive paste used for producing such an electrode.
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
H01L 35/14 - Selection of the material for the legs of the junction using inorganic compositions
3, and 73-90 wt % of lead compound, wherein lead fluoride is contained in the range of 5-28 wt % based on the total weight of the lead compound; and organic medium.
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
patents