Abstract

Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.

IPC Classes  ?

• H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

Abstract

An electron beam apparatus includes an electron optics system to generate an electron beam, an object table to hold the specimen at a target position so that a target portion of the specimen is irradiated by the electron beam, and a positioning device to displace the object table relative to the electron beam. The positioning device includes a stage actuator and a balance mass. The stage actuator exerts a force onto the object table to cause an acceleration of the object table. The force onto the object table results in a reaction force onto the balance mass. The balance mass moves in response to the reaction force. The positioning device enables the balance mass to move in a first direction in response to a component of the reaction force in the first direction.

IPC Classes  ?

• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support

Abstract

Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

IPC Classes  ?

• H01J 37/26 - Electron or ion microscopesElectron- or ion-diffraction tubes
• H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

Abstract

Systems and methods are provided for compensating dispersion of a beam separator in a single-beam or multi-beam apparatus. Embodiments of the present disclosure provide a dispersion device comprising an electrostatic deflector and a magnetic deflector configured to induce a beam dispersion set to cancel the dispersion generated by the beam separator. The combination of the electrostatic deflector and the magnetic deflector can be used to keep the deflection angle due to the dispersion device unchanged when the induced beam dispersion is changed to compensate for a change in the dispersion generated by the beam separator. In some embodiments, the deflection angle due to the dispersion device can be controlled to be zero and there is no change in primary beam axis due to the dispersion device.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
• H01J 37/244 - DetectorsAssociated components or circuits therefor

Abstract

Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/12 - Lenses electrostatic

Abstract

Systems and methods are provided for evacuating a chamber (101). The evacuation system comprises a cooler (320) coupled with the chamber and a controller (350). The controller is configured to determine whether a property of the cooler or the chamber satisfies one or more conditions. Based on the determination that the property satisfies the one or more conditions, the controller is configured to isolate the cooler from the chamber or control the temperature of the cooler to increase at one or more rates. The controller is further configured to control one or more pumps 330,340 to pump the chamber to a base pressure value.

IPC Classes  ?

• H01J 37/18 - Vacuum locks
• F04B 37/08 - Pumps specially adapted for elastic fluids and having pertinent characteristics not provided for in, or of interest apart from, groups for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps
• F04B 49/06 - Control using electricity

Abstract

A load lock system for charged particle beam imaging with a particle shielding plate (204), a bottom seal plate (202) and a plurality of sensor units (301-303) is provided. The sensor units are located above the wafer, the shield plate is designed to have a few number of screws, and the bottom seal plate contains no cable, no contact sensors and fewer screws used. In the invention, the system is designed to improve the contamination particles from components in the load lock system of charged particle beam inspection tool and also to simplify its assembly.

IPC Classes  ?

• H01J 37/18 - Vacuum locks
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Abstract

Systems and methods are provided for charged particle detection. The detection system comprises a signal processing circuit (502) configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements (244). The detection system further comprises a beam spot processing module (506) configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

IPC Classes  ?

• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

Abstract

A server for knowledge recommendation for defect review. The server includes a processor electronically coupled to an electronic storage device storing a plurality of knowledge files related to wafer defects. The processor is configured to execute a set of instruction to cause the server to: receive a request for knowledge recommendation for inspecting an inspection image from a defect classification server; search for a knowledge file in the electronic storage device that matches the inspection image; and transmit the search result to the defect classification server.

IPC Classes  ?

• G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]

Abstract

A defect pattern grouping method is disclosed. The defect pattern grouping method comprises obtaining a first polygon that represents a first defect from an image of a sample, comparing the first polygon with a set of one or more representative polygons of a defect-pattern collection, and grouping the first polygon with any one or more representative polygons identified based on the comparison.

IPC Classes  ?

• G03F 7/20 - ExposureApparatus therefor
• G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
• G06T 7/00 - Image analysis
• G01N 21/956 - Inspecting patterns on the surface of objects

Abstract

A defect inspection system is disclosed. According to certain embodiments, the system includes a memory storing instructions implemented as a plurality of modules. Each of the plurality of modules is configured to detect defects having a different property. The system also includes a controller configured to cause the computer system to: receive inspection data representing an image of a wafer; input the inspection data to a first module of the plurality of modules, the first module outputs a first set of points of interests (POIs) having a first property; input the first set of POIs to a second module of the plurality of modules, the second module output a second set of POIs having the second property; and report that the second set of POIs as defects having both the first property and the second property.

IPC Classes  ?

• G06T 7/00 - Image analysis

Abstract

A defect displaying method is provided in the disclosure. The method comprises acquiring defect group information from an image of a wafer, wherein the defect group information includes a set of correlations between a plurality of defects identified from the image and one or more corresponding assigned defect types and displaying at least some of the plurality of defects according to their corresponding assigned defect types.

IPC Classes  ?

• G06T 11/00 - 2D [Two Dimensional] image generation

Abstract

The present disclosure proposes an anti-rotation lens and using it as an anti-rotation condenser lens in a multi-beam apparatus with a pre-beamlet-forming mechanism. The anti-rotation condenser lens keeps rotation angles of beamlets unchanged when changing currents thereof, and thereby enabling the pre-beamlet-forming mechanism to cut off electrons not in use as much as possible. In this way, the multi-beam apparatus can observe a sample with high resolution and high throughput, and is competent as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry.

IPC Classes  ?

• H01J 37/141 - Electromagnetic lenses
• H01J 37/145 - Combinations of electrostatic and magnetic lenses
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

Disclosed herein is a method comprising : starting pre-charging a region of a sample with a first beam of charged particles; at a time later than starting pre-charging the region, starting imaging the region with a second beam of charged particles; wherein the region is electrically ungrounded. From the image of the region, defects may be identified.

IPC Classes  ?

• G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes

Abstract

System and method for dynamically determining a position of stage (200) holding a sample and automatically compensating position errors comprising a plurality of interferometer units (31, 32) configured to generate signals based on a position of a stage and further comprising a computing device which can be configured to determine the position of the sample based on the signals, and in response to the determined position, provide instructions associated with the determined position by a control module for controlling of a motor of a stage, or for controlling of a motor to adjust interferometer units emitting charged particle beams, or combination thereof, to compensate position errors of a sample automatically.

IPC Classes  ?

• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• G03F 7/20 - ExposureApparatus therefor

Abstract

Systems and methods for venting gas into a chamber 304 at an accelerated speed are disclosed. The system comprises a first gas flow and a second gas flow. The first gas flow is formed by a first vent valve 312 and optionally a third vent valve 316. The second gas flow is formed by a second vent valve 314. The vent valve vacuum system is configured to connect a gas source reservoir 301 and a chamber 304 for gas to be vented into, and coupled to a controller 302. The vent valve vacuum system turns on the second vent valve to form a second gas flow at a point of time later than the first gas flow is formed.

IPC Classes  ?

• H01J 37/18 - Vacuum locks

Abstract

A data processing system is disclosed. According to certain embodiments, the system includes a scheduler configured to receive an inspection data set to be processed and to parse the inspection data set into a plurality of workloads including a first set of workloads and a second set of workloads, wherein the inspection data set corresponds to information related to one or more sets of secondary electrons. The system also includes a first sub-scheduler configured to manage a first set of computing nodes for processing the first set of workloads assigned by the scheduler. The system further includes a second sub-scheduler configured to manage a second set of computing nodes for processing the second set of workloads assigned by the scheduler, wherein the first set of workloads and the second set of workloads are concurrently processed by the first and second set of computing nodes.

IPC Classes  ?

• G06F 9/50 - Allocation of resources, e.g. of the central processing unit [CPU]
• H01L 21/66 - Testing or measuring during manufacture or treatment

Abstract

Systems and methods are provided for dynamically compensating position errors of a sample 350. The system can comprise one or more sensing units 311,321,331 configured to generate a signal based on a position of a sample 350 and a controller. The controller can be configured to determine the position of the sample based on the signal and in response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber.

IPC Classes  ?

• H01J 37/18 - Vacuum locks

Abstract

A new multi-beam apparatus with a total FOV variable in size, orientation and incident angle, is proposed. The new apparatus provides more flexibility to speed the sample observation and enable more samples observable. More specifically, as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry, the new apparatus provide more possibilities to achieve a high throughput and detect more kinds of defects.

IPC Classes  ?

• G06T 7/00 - Image analysis
• H01J 37/252 - Tubes for spot-analysing by electron or ion beamsMicroanalysers
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
• H01J 37/26 - Electron or ion microscopesElectron- or ion-diffraction tubes
• H01J 37/06 - Electron sourcesElectron guns
• H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
• H01J 37/10 - Lenses

Abstract

A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross¬ talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti- scanning deflection unit performs the anti- scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.

IPC Classes  ?

• G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
• H01J 37/10 - Lenses
• H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators

Abstract

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source- conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

IPC Classes  ?

• G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
• H01J 37/10 - Lenses
• H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams

Abstract

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

IPC Classes  ?

• H01J 49/00 - Particle spectrometers or separator tubes
• G01N 23/00 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or
• G21K 5/10 - Irradiation devices with provision for relative movement of beam source and object to be irradiated
• G21K 7/00 - Gamma ray or X-ray microscopes

Abstract

An apparatus basically uses a simple and compact multi-axis magnetic lens to focus each of a plurality of charged particle beams on sample surface at the same time. In each sub-lens module of the multi-axis magnetic lens, two magnetic rings are respectively inserted into upper and lower holes with non-magnetic radial gap. Each gap size is small enough to keep a sufficient magnetic coupling and large enough to get a sufficient axial symmetry of magnetic scale potential distribution in the space near to its optical axis. This method eliminates the non-axisymmetric transverse field in each sub-lens and the round lens field difference among all sub-lenses at the same time; both exist inherently in a conventional multi-axis magnetic lens.

IPC Classes  ?

• G01N 23/00 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or

Abstract

An apparatus basically uses a simple and compact multi-axis magnetic lens to focus each of a plurality of charged particle beams on sample surface at the same time. In each sub-lens module of the multi-axis magnetic lens, two magnetic rings are respectively inserted into upper and lower holes with non-magnetic radial gap. Each gap size is small enough to keep a sufficient magnetic coupling and large enough to get a sufficient axial symmetry of magnetic scale potential distribution in the space near to its optical axis. This method eliminates the non-axisymmetric transverse field in each sub-lens and the round lens field difference among all sub-lenses at the same time; both exist inherently in a conventional multi-axis magnetic lens.

IPC Classes  ?

• G01N 23/00 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or

Abstract

The present invention relates to a multi-axis magnetic lens for a charged particle beam system. The apparatus eliminates the undesired non-axisymmetric transverse magnetic field components from the magnetic field generated by a common excitation coil and leaves the desired axisymmetric field for focusing each particle beam employed within the system.

IPC Classes  ?

• G21K 1/08 - Deviation, concentration, or focusing of the beam by electric or magnetic means