A method of forming a solar cell is disclosed. The method includes forming a multilayered stack of materials wherein a first amorphous silicon layer is the top layer of the multilayered stack of materials and is formed above an oxide layer that is formed above a second amorphous silicon layer. In addition, the method includes forming a plurality of openings in the first amorphous silicon layer, forming a plurality of non-contiguous mask regions in the second amorphous silicon layer, and forming a plurality of trenches around each non-contiguous mask region of the plurality of non-contiguous mask regions to form a plurality of non-contiguous first silicon regions and to form one or more second silicon regions, wherein the plurality of non-contiguous first silicon regions include parts of a first portion of the second amorphous silicon layer on their top surfaces, wherein the parts of the first portion of the second amorphous silicon layer includes the plurality of non-contiguous mask regions, and wherein the one or more second silicon regions include parts of a second portion of the second amorphous silicon layer on the top surface of the one or more second silicon regions. The method further includes removing the plurality of non-contiguous mask regions to expose the top surfaces of the plurality of non-contiguous first silicon regions.
A method of forming a solar cell is disclosed. The method includes forming a multilayered stack of materials including a substrate, forming a plurality of openings in the multilayered stack of materials, forming a plurality of dielectric regions, aligned with the plurality of openings, on a surface of a first silicon material of the multilayered stack of materials, forming a trench around each dielectric region of the plurality of dielectric regions, to form a plurality of first silicon regions and one or more second silicon regions, and after forming the trench around each dielectric region of the plurality of dielectric regions, forming a first doped material on exposed surfaces of the multilayered stack of materials. In addition, the method includes using the first doped material to cause the plurality of first silicon regions to have a doping type that corresponds to the doping type of the first doped material, and using a second doped material that is located in an uppermost part of a layer of amorphous silicon in the multilayered stack of materials, to cause the one or more second polysilicon regions to have a doping type that corresponds to the doping type of the second doped material.
H10F 10/165 - Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
A method of forming a solar cell. The method includes forming a multilayered stack of materials including a substrate, forming a plurality of openings in the top layer of the multilayered stack of materials, forming a plurality of dielectric regions, that are aligned to the plurality of openings, on a polysilicon layer of the multilayered stack of materials, forming a plurality of trenches around the plurality of dielectric regions to form a plurality of first polysilicon regions and one or more second polysilicon regions wherein the one or more second polysilicon regions include a carbon containing amorphous silicon layer on their top surface having a first doping type, and forming a dielectric layer having a second doping type above the plurality of first polysilicon regions and the carbon containing amorphous silicon layer. The method includes in a doping operation, using the carbon containing amorphous silicon layer to cause the one or more second polysilicon regions to have the first doping type, and in the doping operation, using the dielectric layer having the second doping type to cause the plurality of first polysilicon regions to have the second doping type.
Embodiments described herein relate to an apparatus that includes a creel assembly that is configured to support a plurality of spools that each store an electrically conductive wire. In an embodiment, the apparatus includes a coarse pitch assembly that includes a plurality of coarse pitch combs, where two or more of the coarse pitch combs are provided at different horizontal planes. In an embodiment, the apparatus further comprises a fine pitch comb and a compression roller. In an embodiment, the apparatus is configured to feed the electrically conductive wire from each spool in the creel assembly to the compression roller, and the electrically conductive wire from each creel is configured to pass through the coarse pitch assembly and the fine pitch comb before reaching the compression roller.
B65H 49/00 - Unwinding or paying-out filamentary materialSupporting, storing, or transporting packages from which filamentary material is to be withdrawn or paid-out
B65H 51/08 - Rollers, pulleys, capstans, or intermeshing rotary elements arranged to operate in groups or in co-operation with other elements
5.
METHODS FOR CONTROLLING PASSIVATING CONTACT THICKNESS IN BACKSIDE CONTACT SOLAR CELLS
A method of forming a solar cell is disclosed. The method includes forming a multilayered stack of materials that includes a substrate, forming a plurality of trenches in a polysilicon layer of the multilayered stack of materials to form a plurality of first polysilicon regions and one or more second polysilicon regions, after forming the plurality of trenches, forming a first doped material on exposed backside surfaces of the multilayered stack of materials, using the first doped material to cause the plurality of first polysilicon regions to have a doping type that corresponds to the doping type of the first doped material, using a second doped material to cause the one or more second polysilicon regions to have a doping type that corresponds to the doping type of the second doped material, and removing the first doped material.
A method of forming a solar cell is disclosed. The method includes forming a multilayered stack of materials on a substrate, forming a plurality of openings in the top layer of the multilayered stack of materials, forming a plurality of dielectric regions that are aligned to the plurality of openings on a polysilicon layer of the multilayered stack of materials, and forming a plurality of trenches around the plurality of dielectric regions to form a plurality of first polysilicon regions and one or more second polysilicon regions. The method further includes, after forming the plurality of trenches, forming a first doped material on exposed surfaces of remaining portions of the multilayered stack of materials, using the first doped material to cause the plurality of first polysilicon regions to have a doping type that corresponds to the doping type of the first doped material, and using a second doped material to cause the one or more second polysilicon regions to have a doping type that corresponds to the doping type of the second doped material.
Embodiments described herein relate to an apparatus that includes a chuck, where the chuck includes a material with a yield strength that is 100MPa or less. In an embodiment, the apparatus may include a channel into a first surface of the chuck, and a hole into a second surface of the chuck. In an embodiment, the hole passes through the chuck and exits within the channel. In an embodiment, the hole has a non-uniform width.
Embodiments described herein relate to an apparatus that includes a first roller with a plurality of first grooves, and a force application assembly configured to apply a force to the first roller. In an embodiment, the apparatus further comprises a frame, where the first roller is displaceable in a vertical direction along the frame. In an embodiment, the apparatus further includes a second roller that is coupled to the first roller, where the second roller includes a plurality of second grooves, and where the plurality of first grooves are aligned with the plurality of second grooves.
Photovoltaic (PV) frames, PV frame systems, methods of PV manufacture, articles of PV manufacture, and processes involving PVs are provided. These frames may employ a laminate receiver configured to receive a surface of a PV laminate and support that PV laminate upon installation of a PV system.
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type layouts and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is on a first thin dielectric layer on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is on a second thin dielectric layer on the back surface of the substrate. The second polycrystalline silicon emitter region has a vertical thickness less than a vertical thickness of the first polycrystalline silicon emitter region.
A solar cell module includes interconnected solar cells, a transparent cover over the front sides of the solar cells, and a backsheet on the backside of the solar cells. An encapsulant protectively packages the solar cells. The encapsulant and the transparent cover forms a top protection package that has a combined UV transmission curve and volume specific resistance that addresses polarization. The encapsulant has a relatively wide UV transmission curve.
A string of solar cells is disclosed. The sides of the solar cells have a corrugated shape which forms an opening when the solar cells are arranged in a shingled manner. The solar cells are electrically connected in series by a ribbon that passes through the opening. A wire mesh used to decrease solar cell resistance is also disclosed.
A photovoltaic module cable clip is disclosed. The photovoltaic module cable clip includes a first portion that is configured to fasten to a flange of a frame of a photovoltaic module, a second portion that is configured to fasten to an outside wall of the frame of the photovoltaic module, and a third portion that extends vertically from the first portion and the second portion and is configured to accommodate a cable.
F16L 3/06 - Supports for pipes, cables or protective tubing, e.g. hangers, holders, clamps, cleats, clips, brackets partly surrounding the pipes, cables or protective tubing with supports for wires
F16L 3/24 - Supports for pipes, cables or protective tubing, e.g. hangers, holders, clamps, cleats, clips, brackets with special member for attachment to profiled girders
A solar cell connector is disclosed. The solar cell connector includes a first side that is configured to be coupled on a backside of a first solar cell, through a separate solar cell connector, to a first ribbon that is located on the backside of the first solar cell, and a second side that is configured to be coupled on the frontside of a second solar cell to a second ribbon that is located on the frontside of the second solar cell.
H02S 40/34 - Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
Composite making regions are provided. These masking regions can include layers or other areas of different transparency where a first layer has a first transparency and a second layer has a different transparency. Masking regions can be positioned between adjacent photovoltaic cells of photovoltaic arrays.
A string of solar cells interconnected by metal wires. The bonded metal interconnect wires having a cross-sectional area with a head and shoulder shape or with a curved dome shape. An apparatus for manufacturing a string of solar cells. The apparatus bonds metal interconnect wires to solar cells and results in wires having a cross-sectional area with a head and shoulder shape or with a curved dome shape.
Methods of fabricating conductive contacts for polycrystalline silicon features of solar cells, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell includes providing a substrate having a polycrystalline silicon feature. The method also includes forming a conductive paste directly on the polycrystalline silicon feature. The method also includes firing the conductive paste at a temperature above approximately 700 degrees Celsius to form a conductive contact for the polycrystalline silicon feature. The method also includes, subsequent to firing the conductive paste, forming an anti-reflective coating (ARC) layer on the polycrystalline silicon feature and the conductive contact. The method also includes forming a conductive structure in an opening through the ARC layer and electrically contacting the conductive contact.
An interconnect structure for solar cell interconnection wires is disclosed. The interconnect structure includes a first portion that is attached to parts of a plurality of wires that extend in a first direction away from a first solar cell to which the plurality of wires are coupled and a second portion that is attached to parts of the plurality of wires that extend in a second direction away from a second solar cell to which the plurality of wires are coupled. The interconnect structure also includes a flexible portion between the first portion and the second portion, that includes openings, that is configured to flex in accordance with a movement of one or more of the plurality of wires.
A string of shingled solar cells is disclosed. The string of shingled solar cells has flexible joints connecting the solar cells made from cured liquid polymeric adhesive. An electrically conductive interconnect passes through the flexible joint. The string of shingled solar cells also has interconnect reinforcements made from cured liquid polymeric adhesive to improve interconnect adhesion to the front surface of the solar cells.
A solar module includes at least one first solar cell and at least one second solar cell, each solar cell including a top side and bottom side, a bus bar, and a plurality of wires, disposed on the top side, extending from and electrically connected to the bus bar. The first solar cell overlaps a region of the second solar cell to electrically connect to the second solar cell and to form a shingled arrangement, and in the second solar cell, the plurality of wires connect to the bus bar outside of the region in which the first solar cell overlaps the second solar cell. A method of manufacturing a solar module includes shingling solar cells using ECA to make a hybrid dense solar cell string that includes at least two hybrid dense solar cells in a shingled arrangement.
A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a first emitter region over a substrate, the first emitter region having a perimeter around a portion of the substrate. A first conductive contact is electrically coupled to the first emitter region at a location outside of the perimeter of the first emitter region.
A bifacial solar module is described. The bifacial module has a laminate with a sun-facing glass layer and a backside glass layer, and two backrails attached to the backside glass layer for structural support. The bifacial module has an array of solar cells within a laminate, and the laminate has exterior edges that are not in contact with a frame structure or clamps. Two bifacial modules may be combined in a space-saving solar panel packaging arrangement. Also described is a solar panel assembly, which includes a mounting system configured to attach the bifacial module to a torque tube of a tracking system.
A photovoltaic module crossbar is disclosed. The photovoltaic module crossbar includes a central portion, a first angled end portion extending from the central portion in a first direction and configured to incur deformations from a first component of a photovoltaic module frame that interlock with deformations in the first component of the photovoltaic module frame, and a second angled end portion extending from the central portion in a second direction and configured to incur deformations from a second component of the photovoltaic module frame that interlock with deformations in the second component of the photovoltaic module frame.
A solar cell is disclosed. The solar cell incudes a substrate, a dielectric layer formed on a backside of the substrate, and a plurality of non-contiguous deposited emitter regions having a first polarity on the dielectric layer. The solar cell also includes at least one deposited emitter region having a second polarity on the dielectric layer, laterally disposed to the plurality of non-contiguous deposited emitter regions.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
Aligned metallization approaches for fabricating solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a semiconductor layer over a semiconductor substrate. A first plurality of discrete openings is in the semiconductor layer and exposes corresponding discrete portions of the semiconductor substrate. A plurality of doped regions is in the semiconductor substrate and corresponds to the first plurality of discrete openings. An insulating layer is over the semiconductor layer and is in the first plurality of discrete openings. A second plurality of discrete openings is in the insulating layer and exposes corresponding portions of the plurality of doped regions. Each one of the second plurality of discrete openings is entirely within a perimeter of a corresponding one of the first plurality of discrete openings. A plurality of conductive contacts is in the second plurality of discrete openings and is on the plurality of doped regions.
A solar cell can include a first plurality of metal contact fingers, and a second plurality of metal contact fingers interdigitated with the first plurality of metal contact fingers, wherein at least one of the first plurality of metal contact fingers comprises a wrap-around metal finger that passes between a first edge of the solar cell and at least one contact pads. A photovoltaic (PV) string including a solar cell with a wrap-around metal contact finger. A method of coupling an electrically conductive connector to a solar cell with a wrap-around metal contact finger.
Disclosed herein are approaches to fabricating solar cells, solar cell strings and solar modules using roll-to-roll foil-based metallization approaches. Methods disclosed herein can comprise the steps of providing at least one solar cell wafer on a first roll unit and conveying a metal foil to the first roll unit. The metal foil can be coupled to the solar cell wafer on the first roll unit to produce a unified pairing of the metal foil and the solar cell wafer. We disclose solar energy collection devices and manufacturing methods thereof enabling reduction of manufacturing costs due to simplification of the manufacturing process by a high throughput foil metallization process.
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
30.
Solar cell emitter region fabrication with differentiated p-type and n-type architectures and incorporating dotted diffusion
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.
H10F 10/165 - Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
H10F 77/14 - Shape of semiconductor bodiesShapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
H10F 77/70 - Surface textures, e.g. pyramid structures
31.
WIRE BOND AND CIRCUIT BOARD INTERCONNECTS FOR SOLAR CELL MODULES
A solar cell module with interconnect wires wire-bonded to back-contact solar cells. A solar cell module using an interconnect board to electrical interconnect back-contact solar cells. The interconnect board may also contain a bypass diode and circuitry to connect the bypass diode to solar cells of the module.
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/044 - PV modules or arrays of single PV cells including bypass diodes
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.
H01L 31/056 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/0745 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
33.
STRINGS OF SOLAR CELLS HAVING LASER ASSISTED METALLIZATION CONDUCTIVE CONTACT STRUCTURES AND THEIR METHODS OF MANUFACTURE
Strings of solar cells having laser assisted metallization conductive contact structures, and their methods of manufacture, are described. For example, a solar cell string includes a first solar cell having a front side and a back side, and one or more laser assisted metallization conductive contact structures electrically connecting a first metal foil to the back side of the first solar cell. The solar cell string also includes a second solar cell having a front side and a back side, and one or more laser assisted metallization conductive contact structures electrically connecting a second metal foil to the back side of the second solar cell. The solar cell string also includes a conductive interconnect coupling the first and second solar cells, the conductive interconnect including a strain relief feature.
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H02S 40/34 - Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
A high efficiency configuration for a solar cell module comprises solar cells conductively bonded to each other in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.
H10F 77/00 - Constructional details of devices covered by this subclass
H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters or transformers
H02J 3/46 - Controlling the sharing of output between the generators, converters, or transformers
H02J 5/00 - Circuit arrangements for transfer of electric power between ac networks and dc networks
H02S 40/32 - Electrical components comprising DC/AC inverter means associated with the PV module itself, e.g. AC modules
H02S 40/34 - Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
H10F 10/166 - Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
H10F 19/00 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules
H10F 19/70 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising bypass diodes
H10F 19/80 - Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
H10F 19/90 - Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
H10F 77/14 - Shape of semiconductor bodiesShapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
A packaging piece is disclosed. The packaging piece includes a first side that includes a first module frame interlocking structure configured to snap fit to a drainage hole of a module frame in a first orientation and to extend toward a glass surface of a module in a second orientation. The packaging piece also includes a second side that includes: a second module frame interlocking structure configured to extend toward the glass surface of the module in the first orientation and to snap fit to the drainage hole of the module frame in the second orientation.
B65D 61/00 - External frames or supports adapted to be assembled around, or applied to, articles
B65D 71/00 - Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans or pop bottlesBales of material
B65D 85/48 - Containers, packaging elements or packages, specially adapted for particular articles or materials for articles particularly sensitive to damage by shock or pressure for glass sheets
36.
FRONT SURFACE ANTI-REFLECTION COATING FOR SOLAR CELLS
A solar cell is disclosed. The solar cell includes a substrate and an anti-reflection coating on the substrate. The anti-reflection coating includes a coating layer on the substrate that includes SiNx, a high refractive index coating layer that includes TiO2 on the coating layer that includes SiNx, and a coating layer on the coating layer that includes TiO2.
A solar cell is disclosed. The solar cell includes a substrate and an anti-reflection coating on the substrate. The anti-reflection coating includes a coating layer on the substrate that includes SiNx, a high refractive index coating layer that includes TiO2 on the coating layer that includes SiNx, and a coating layer on the coating layer that includes TiO2.
A solar cell is disclosed. The solar cell includes a substrate and an anti-reflection coating on the substrate. The anti-reflection coating includes a coating layer on the substrate that includes SiNx, a high refractive index coating layer that includes TiO2 on the coating layer that includes SiNx, and a coating layer on the coating layer that includes TiO2.
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type layouts and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is on a first thin dielectric layer on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is on a second thin dielectric layer on the back surface of the substrate. The second polycrystalline silicon emitter region has a vertical thickness less than a vertical thickness of the first polycrystalline silicon emitter region.
Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.
H10F 10/14 - Photovoltaic cells having only PN homojunction potential barriers
H10F 10/165 - Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
H10F 77/00 - Constructional details of devices covered by this subclass
41.
Solar cell emitter region fabrication with differentiated p-type and n-type architectures and incorporating a multi-purpose passivation and contact layer
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.
A PV laminate and methods of assembly are provided. The PV cells of exemplary PV laminates may comprise a shingled linear array of PV cells where one or more spacers are employed near the connections between adjacent PV cells of the linear array. These spacers can serve to reduce stresses during assembly of the PV laminate and may be later substantially subsumed in encapsulant once assembly of the PV laminate is completed.
A string of shingled solar cells is disclosed. The string of shingled solar cells has flexible joints connecting the solar cells made from cured liquid polymeric adhesive. An electrically conductive interconnect passes through the flexible joint. The string of shingled solar cells also has interconnect reinforcements made from cured liquid polymeric adhesive to improve interconnect adhesion to the front surface of the solar cells.
Separation of individual strips from a solar cell workpiece, is accomplished by excluding a junction (e.g., a homojunction such as a p-n junction, or a heterojunction such as a p-i-n junction) from regions at which separation is expected to occur. According to some embodiments, the junction is excluded by physical removal of material from inter-strip regions of the workpiece. According to other embodiments, exclusion of the junction is achieved by changing an effective doping level (e.g., counter-doping, deactivation) at inter-strip regions. For still other embodiments, the junction is never formed at inter-strip regions in the first place (e.g., using masking during original dopant introduction). By imposing distance between the junction and defects arising from separation processes (e.g., backside crack propagation), losses attributable to electron-hole recombination at such defects are reduced, and collection efficiency of shingled modules is enhanced.
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 31/075 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
A solar module includes solar cells that are encapsulated. A back layer is disposed towards back sides of the solar cells and a transparent layer is disposed towards front sides of the solar cells. A protection coating is formed on a surface of the solar cells. The protection coating can be continuous or have a pattern with cutouts that expose the surface of the solar cells.
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a substrate has a surface. A plurality of N-type and P-type semiconductor regions is disposed in or above the surface of the substrate. A conductive contact structure is disposed on the plurality of N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of conductive wires, each conductive wire of the plurality of conductive wires essentially continuously bonded directly to a corresponding one of the N-type and P-type semiconductor regions.
A solar cell is disclosed. The solar cell incudes a substrate, a dielectric layer formed on a backside of the substrate, and a plurality of non-contiguous deposited emitter regions having a first polarity on the dielectric layer. The solar cell also includes at least one deposited emitter region having a second polarity on the dielectric layer, laterally disposed to the plurality of non-contiguous deposited emitter regions.
Approaches for fabricating wire-based metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal wires. Each metal wire of the plurality of metal wires is parallel along a first direction to form a one-dimensional layout of a metallization layer for the solar cell.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
50.
UV-curing of light receiving surfaces of solar cells
Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
51.
Solar cell with cell architecture designed for reduced carrier recombination
A solar cell is disclosed. The solar cell incudes a substrate, a dielectric layer formed on a backside of the substrate, and a plurality of non-contiguous deposited emitter regions having a first polarity on the dielectric layer. The solar cell also includes at least one deposited emitter region having a second polarity on the dielectric layer, laterally disposed to the plurality of non-contiguous deposited emitter regions.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
A string of solar cells is disclosed. The sides of the solar cells have a corrugated shape which forms an opening when the solar cells are arranged in a shingled manner. The solar cells are electrically connected in series by a ribbon that passes through the opening. A wire mesh used to decrease solar cell resistance is also disclosed.
A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/0368 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
H01L 31/056 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
H01L 31/072 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
H01L 31/0745 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
54.
Metallization and stringing for back-contact solar cells
Metallization and stringing methods for back-contact solar cells, and resulting solar cells, are described. In an example, in one embodiment, a method involves aligning conductive wires over the back sides of adjacent solar cells, wherein the wires are aligned substantially parallel to P-type and N-type doped diffusion regions of the solar cells. The method involves bonding the wires to the back side of each of the solar cells over the P-type and N-type doped diffusion regions. The method further includes cutting every other one of the wires between each adjacent pair of the solar cells.
Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0368 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
56.
Local patterning and metallization of semiconductor structures using a laser beam
Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.
Embodiments create groupings of singulated strips of mixed (chamfered; rectangular) footprint/outline/perimeter types. The groupings exhibit a consistent ratio of chamfered strips to rectangular strips. These groupings can then be freely incorporated into solar modules in order to offer a pleasingly uniform appearance.
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
H10F 10/14 - Photovoltaic cells having only PN homojunction potential barriers
H10F 10/165 - Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
H10F 19/20 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
H10F 19/90 - Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
H10F 77/122 - Active materials comprising only Group IV materials
H10F 77/70 - Surface textures, e.g. pyramid structures
59.
Module Packaging Pieces for Packaging Using Alternating Module Orientations
A module packaging piece is disclosed. The module packaging piece includes a first side that includes one or more flange securing tabs and a first channel that is configured to accommodate and constrain a flange of a frame of a first module. The module packaging piece includes a second side that includes a second channel that is configured to accommodate and constrain a flange of a frame of a second module.
B65D 81/05 - Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents specially adapted to protect contents from mechanical damage maintaining contents at spaced relation from package walls, or from other contents
B65D 81/133 - Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents specially adapted to protect contents from mechanical damage maintaining contents at spaced relation from package walls, or from other contents using rigid or semi-rigid sheets of shock-absorbing material of a shape specially adapted to accommodate contents, e.g. trays
B65D 85/48 - Containers, packaging elements or packages, specially adapted for particular articles or materials for articles particularly sensitive to damage by shock or pressure for glass sheets
B65D 85/62 - Containers, packaging elements or packages, specially adapted for particular articles or materials for stacks of articlesContainers, packaging elements or packages, specially adapted for particular articles or materials for special arrangements of groups of articles
60.
Tri-layer semiconductor stacks for patterning features on solar cells
Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.
H10F 10/14 - Photovoltaic cells having only PN homojunction potential barriers
H10F 10/165 - Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
H10F 10/166 - Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
H10F 71/10 - Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
H10F 77/14 - Shape of semiconductor bodiesShapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
H10F 77/70 - Surface textures, e.g. pyramid structures
A high efficiency configuration for a solar cell module comprises solar cells arranged in an overlapping shingled manner and methods for assembling solar cells in a shingled manner. Solar cells in the module are electrically connected in series by front side ribbons and separate rear side ribbons. The front-side ribbons have a smaller cross-sectional width while the rear-side ribbons are thinner and wider.
A solar cell module with darkened metallic components is disclosed. A method of darkening the visible metallic components of the solar cells of a solar cell module is disclosed. The method creates a dark patina on the metallic components of a solar cell.
Methods of soldering wire, such as traces or ribbon, onto single or multi-busbar solar cells. Devices constructed with such methods may also be covered. Methods may include providing a wire, such as a trace or ribbon, tack soldering the wire at one or more locations to a workpiece, such as solar cell component, and then passing the combined tacked wire and solar cell component through a heating zone where heat is applied to the backside of the solar cell component such that solder in contact with the wire melts and solders the wire to the solar cell component.
A solar cell can include a conductive foil having a first portion with a first yield strength coupled to a semiconductor region of the solar cell. The solar cell can be interconnected with another solar cell via an interconnect structure that includes a second portion of the conductive foil, with the interconnect structure having a second yield strength greater than the first yield strength.
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
B23K 31/02 - Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by any single one of main groups relating to soldering or welding
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/0745 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
65.
BACKSIDE CONTACT SOLAR CELLS WITH SEPARATED POLYSILICON DOPED REGIONS
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0368 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
H01L 31/0745 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A wire bonding system attaches wires to a solar cell wafer. The wire bonding system includes a feed tube through which a wire is drawn. Rollers contact the wire through openings in the feed tube to facilitate movement of the wire. The wire bonding system includes a soldering heater tip and a wire cutter. The solar cell wafer is placed on a platform, which moves the solar cell wafer. The system has multiple lanes for attaching multiple wires to the solar cell wafer at the same time in parallel operations.
Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a string of solar cells includes a plurality of back-contact solar cells, wherein each of the plurality of back-contact solar cells includes P-type and N-type doped diffusion regions. A plurality of conductive wires is disposed over a back surface of each of the plurality of solar cells, wherein each of the plurality of conductive wires is substantially parallel to the P-type and N-type doped diffusion regions of each of the plurality of solar cells. One or more of the plurality of conductive wires adjoins a pair of adjacent solar cells of the plurality of solar cells and has a relief feature between the pair of adjacent solar cells.
Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, forming a first semiconductor region and a second semiconductor region on the back side of a substrate. A first conductive busbar can be formed above the first semiconductor region. A first portion of a second conductive busbar can be formed above the second semiconductor region. A second portion of the second conductive busbar can be formed above the second semiconductor region, where a separation region separates the second portion and the first portion of the second conductive busbar. A third conductive busbar can be formed above the first semiconductor region. A first conductive bridge can be formed above the separation region, where the first conductive bridge electrically connects the first conductive busbar to the third conductive busbar.
H01L 31/0368 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.
A high efficiency configuration for a solar cell module comprises solar cells arranged in an overlapping shingled manner and methods for assembling solar cells in a shingled manner. Solar cells in the module are electrically connected in series by front side ribbons and separate rear side ribbons. The front-side ribbons have a smaller cross-sectional width while the rear-side ribbons are thinner and wider.
Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a substrate has a surface. A plurality of N-type and P-type semiconductor regions is disposed in or above the surface of the substrate. A conductive contact structure is disposed on the plurality of N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of conductive wires, each conductive wire of the plurality of conductive wires essentially continuously bonded directly to a corresponding one of the N-type and P-type semiconductor regions.
One embodiment is a photovoltaic (PV) module including a frame to receive a perimeter of a backside of a photovoltaic (PV) laminate. The cross rail assembly may include: a conductive frame to receive a perimeter of a backside of a photovoltaic (PV) laminate; one or more conductive cross rail members provide structural rigidity to the conductive frame; and one or more pairs of couplers coupled to the conductive frame, wherein: at least one coupler comprises a grounding coupler having a first keyed section to insert into an opening in the conductive frame and a second keyed section to mate with an end of a conductive cross rail member of the one or more conductive cross rail members to ground the conductive cross rail member to the frame; or at least one coupler of at least one of the one or more pairs includes a length to define a cabling channel.
E06B 3/964 - Corner joints or edge joints for windows, doors, or the like frames or wings using separate connecting pieces, e.g. T-connecting pieces
E06B 3/968 - Corner joints or edge joints for windows, doors, or the like frames or wings using separate connecting pieces, e.g. T-connecting pieces characterised by the way the connecting pieces are fixed in or on the frame members
H02S 20/23 - Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
H02S 40/34 - Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
A photovoltaic module can include a high voltage photovoltaic laminate that include a plurality of high voltage photovoltaic cells with each of the high voltage photovoltaic cells including a plurality of sub-cells. A boost-less conversion device can be configured to convert a first voltage from the high voltage photovoltaic laminate to a second voltage.
H02S 40/32 - Electrical components comprising DC/AC inverter means associated with the PV module itself, e.g. AC modules
H02S 40/34 - Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0475 - PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
78.
INTERLOCKABLE AND SLIDABLE MODULE CLIP PIECE FOR MODULE PACKAGING
A module clip piece for a module is disclosed. The module clip piece includes at least one protrusion configured to engage at least one groove of a first neighboring module clip piece. The at least one protrusion protrudes in a first direction. At least one groove is coupled to the at least one protrusion and is configured to engage at least one protrusion of a second neighboring module clip piece. The at least one groove extends in a second direction that is orthogonal to the first direction.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
B65D 67/02 - Clips or clamps for holding articles together for convenience of storage or transport
B65D 81/05 - Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents specially adapted to protect contents from mechanical damage maintaining contents at spaced relation from package walls, or from other contents
B65D 57/00 - Internal frames or supports for flexible articles, e.g. stiffenersSeparators for articles packaged in stacks or groups, e.g. for preventing adhesion of sticky articles
B65D 85/48 - Containers, packaging elements or packages, specially adapted for particular articles or materials for articles particularly sensitive to damage by shock or pressure for glass sheets
B65D 71/00 - Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans or pop bottlesBales of material
Photovoltaic (PV) cells that can be interconnected with improved interconnect joints to form PV cell strings and PV modules. The improved interconnect joints comprise at least two types of adhesive bonding regions to maximize both electrical conductivity and mechanical strength of interconnect joints coupling terminals of PV cells. The disclosed approaches to PV cell interconnection provide greater manufacturing rates and higher quality PV cell strings and PV modules.
A groove is cut along a line between adjacent solar cells of a wafer. A coating powder is processed to form a coating layer on the surface of the groove. The solar cells are thereafter physically separated from each other along the groove, with the coating layer serving as an edge coat. The solar cells are electrically connected in series and packaged in a solar module.
Methods of fabricating conductive contacts for polycrystalline silicon features of solar cells, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell includes providing a substrate having a polycrystalline silicon feature. The method also includes forming a conductive paste directly on the polycrystalline silicon feature. The method also includes firing the conductive paste at a temperature above approximately 700 degrees Celsius to form a conductive contact for the polycrystalline silicon feature. The method also includes, subsequent to firing the conductive paste, forming an anti-reflective coating (ARC) layer on the polycrystalline silicon feature and the conductive contact. The method also includes forming a conductive structure in an opening through the ARC layer and electrically contacting the conductive contact.
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/0368 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
83.
METHODS OF FORMING A COLORED CONDUCTIVE RIBBON FOR INTEGRATION IN A SOLAR MODULE
The present disclosure describes methods of forming a colored conductive ribbon for a solar module which includes combining a conductive ribbon with a channeled ribbon holder, applying a color coating to at least the conductive ribbon within the channel, curing the color coating on the conductive ribbon, and separating the conductive ribbon from the channeled holder.
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/036 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
Aligned metallization approaches for fabricating solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a semiconductor layer over a semiconductor substrate. A first plurality of discrete openings is in the semiconductor layer and exposes corresponding discrete portions of the semiconductor substrate. A plurality of doped regions is in the semiconductor substrate and corresponds to the first plurality of discrete openings. An insulating layer is over the semiconductor layer and is in the first plurality of discrete openings. A second plurality of discrete openings is in the insulating layer and exposes corresponding portions of the plurality of doped regions. Each one of the second plurality of discrete openings is entirely within a perimeter of a corresponding one of the first plurality of discrete openings. A plurality of conductive contacts is in the second plurality of discrete openings and is on the plurality of doped regions.
A high efficiency configuration for a solar cell module comprises solar cells arranged in an overlapping shingled manner and conductively bonded to each other in their overlapping regions to form super cells, which may be arranged to efficiently use the area of the solar module. Solar cells are conductive bonded to each other with electrically conductive adhesive containing soft spacers.
H02S 40/36 - Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
H02S 30/00 - Structural details of PV modules other than those related to light conversion
H10F 19/90 - Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, forming a first semiconductor region and a second semiconductor region on the back side of a substrate. A first conductive busbar can be formed above the first semiconductor region. A first portion of a second conductive busbar can be formed above the second semiconductor region. A second portion of the second conductive busbar can be formed above the second semiconductor region, where a separation region separates the second portion and the first portion of the second conductive busbar. A third conductive busbar can be formed above the first semiconductor region. A first conductive bridge can be formed above the separation region, where the first conductive bridge electrically connects the first conductive busbar to the third conductive busbar.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0368 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
Photovoltaic (PV) laminates employ single polymer composites (SPCs). The SPCs may be located at various locations of the PV laminate. These locations may include being positioned as an entire back-sheet of the PV laminate as well as, as a portion of a back-sheet or other layer of the PV laminate. The SPCs may be positioned and configured in the PV laminate so as to reduce tensile and compressive forces developed on PV cells from live normal loads or other live loads or dead loads experienced by the PV laminate. The SPCs can serve to reduce the weight of a PV laminate as well as to assist in having PV cells lie along the neutral axis of the PV laminate.
A photovoltaic laminate is disclosed. Embodiments include placing a first encapsulant on a substantially transparent layer that includes a front side of a photovoltaic laminate. Embodiments also include placing a first solar cell on the first encapsulant. Embodiments include placing a metal foil on the first solar cell, where the metal foil uniformly contacts a back side of the first solar cell. Embodiments include forming a metal bond that couples the metal foil to the first solar cell. In some embodiments, forming the metal bond includes forming a metal contact region using a laser source, wherein the formed metal contact region electrically couples the metal foil to the first solar cell. Embodiments can also include placing a backing material on the metal foil. Embodiments can further include forming a back layer on the backing material layer and curing the substantially transparent layer, first encapsulant, first solar cell, metal foil, backing material and back layer to form a photovoltaic laminate.
A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a first emitter region over a substrate, the first emitter region having a perimeter around a portion of the substrate. A first conductive contact is electrically coupled to the first emitter region at a location outside of the perimeter of the first emitter region.
H01L 31/077 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
Embodiments relate to singulated strips of photovoltaic material having physical features that inhibit the spreading of Electrically Conductive Adhesive (ECA), during the connection of such strips to form a solar module.
A high efficiency configuration for a solar cell module comprises solar cells arranged in an overlapping shingled manner and conductively bonded to each other in their overlapping regions to form super cells, which may be arranged to efficiently use the area of the solar module.
H10F 19/90 - Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
H02S 40/36 - Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
H10F 19/40 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
H10F 19/70 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising bypass diodes
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
H10F 77/00 - Constructional details of devices covered by this subclass
H10F 77/122 - Active materials comprising only Group IV materials
One or more techniques, alone or in combination, maximize a surface area of a receiver that converts light into another form of energy. One technique enhances collection efficiency by controlling a size, shape, and/or position of a cell relative to an expected illumination profile under various conditions. Another technique positions non-active elements (such as electrical contacts and/or interconnects) on surfaces likely to be shaded from incident light by other elements of the receiver. Another technique utilizes embodiments of interconnect structures occupying a small footprint. The receiver may be cooled by exposure to a fluid such as water or air.
H01L 31/0525 - Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
G01S 3/786 - Systems for determining direction or deviation from predetermined direction using adjustment of orientation of directivity characteristics of a detector or detector system to give a desired condition of signal derived from that detector or detector system the desired condition being maintained automatically
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/042 - PV modules or arrays of single PV cells
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H02S 20/32 - Supporting structures being movable or adjustable, e.g. for angle adjustment specially adapted for solar tracking
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
F24S 50/20 - Arrangements for controlling solar heat collectors for tracking
A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a substrate having a light-receiving surface and a back surface. The solar cell can include a first semiconductor region of a first conductivity type disposed on a first dielectric layer, wherein the first dielectric layer is disposed on the substrate. The solar cell can also include a second semiconductor region of a second, different, conductivity type disposed on a second dielectric layer, where a portion of the second thin dielectric layer is disposed between the first and second semiconductor regions. The solar cell can include a third dielectric layer disposed on the second semiconductor region. The solar cell can include a first conductive contact disposed over the first semiconductor region but not the third dielectric layer. The solar cell can include a second conductive contact disposed over the second semiconductor region, where the second conductive contact is disposed over the third dielectric layer and second semiconductor region. In an embodiment, the third dielectric layer can be a dopant layer.
Metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, solar cell circuit, solar cell strings, and solar cell arrays are described. A solar cell string can include a plurality of solar cells. The plurality of solar cells can include a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding one of the semiconductor regions.
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
H01L 31/061 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being of the point-contact type
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
98.
HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL
A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0368 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
H01L 31/20 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material
99.
Solar module having a plurality of strings configured from a five strip cell
In an example, the present invention provides a method of manufacturing a solar module. The method includes providing a substrate member having a surface region, the surface region comprising a spatial region, a first end strip comprising a first edge region and a first interior region, the first interior region comprising a first bus bar, a plurality of strips, a second end strip comprising a second edge region and a second interior region, the second edge region comprising a second bus bar, the first end strip, the plurality of strips, and the second end strip arranged in parallel to each other and occupying the spatial region such that the first end strip, the second end strip, and the plurality of strips consists of a total number of five (5) strips. The method includes separating each of the plurality of strips, arranging the plurality of strips in a string configuration, and using the string in the solar module.
A wafer plating fixture for use in simultaneously electroplating a two substrates. The wafer plating fixture including: an electrically conductive carrier bus; a plurality of contact clips electrically coupled to the carrier bus and configured to hold the two substrates in place and electrically couple the two substrates to the carrier bus; and a non-conductive substrate backer to separate the two substrates coupled to the carrier bus. A method of electroplating a plurality of substrates. The method including: mounting two substrates to be plated onto a wafer plating fixture; mounting the wafer plating fixture on a continuous belt of plating system; dipping the wafer plating fixture with the two substrates held thereon into an electroplating bath; and applying a voltage to the two substrates via the wafer plating fixture.
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