A delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel. Each acquisition circuit includes at least one sensor circuit comprising a photosensor to generate a sensor signal, VSIG, depending on a light signal; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. A digital representation may be externally written to the digital storage circuit of the at least one pixel.
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/40 - Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
H04N 25/47 - Image sensors with pixel address outputEvent-driven image sensorsSelection of pixels to be read out based on image data
H04N 25/703 - SSIS architectures incorporating pixels for producing signals other than image signals
H04N 25/766 - Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
2.
Delta Image Sensor With Digital Pixel Storage With Long Term Interruptable Operation
The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level.
The present disclosure relates to an image sensor comprising a plurality of pixel circuits each comprising a photodiode connected between ground and a floating diffusion (FD) node, a reset transistor (MRST) connected between a first voltage supply and the floating diffusion (FD) node, and a source follower transistor (MSF), wherein its drain is connected to a second voltage supply, the gate is connected to a floating diffusion (FD) node and the source is connected to a row select transistor (MSEL). The row select transistor (MSEL) is connected between the source of the source follower transistor (MSF) and a common column output. Each pixel circuit is configured to output an output signal corresponding to a light incident on the photodiode. Each pixel circuit includes at least one additional transistor for configuring each pixel circuit to selectively output a linear integration signal or a logarithmic signal.
H04N 25/571 - Control of the dynamic range involving a non-linear response
H04N 25/766 - Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
4.
Delta image sensor with digital pixel storage using different ramps for storage and comparison
A delta image sensor comprising a plurality of acquisition circuits corresponding to at least one pixel. Each acquisition circuit includes at least one sensor circuit comprising a photosensor to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor; at least one single slope analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal, wherein the A/D circuit (12) is configured to use one of a plurality of ramps for the conversion; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output, in response to the changed level.
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/40 - Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
H04N 25/47 - Image sensors with pixel address outputEvent-driven image sensorsSelection of pixels to be read out based on image data
H04N 25/703 - SSIS architectures incorporating pixels for producing signals other than image signals
H04N 25/766 - Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
A delta image sensor comprising an arrangement of pixels and acquisition circuits corresponding to at least one pixel. Each acquisition circuit includes a sensor circuit comprising a photosensor to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; a digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and a digital output circuit configured to generate an event output when the level has changed. The repeat rate of the analogue to digital conversion is chosen from one or more repeat rates corresponding to modulation of the light signal.
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/40 - Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
H04N 25/47 - Image sensors with pixel address outputEvent-driven image sensorsSelection of pixels to be read out based on image data
H04N 25/703 - SSIS architectures incorporating pixels for producing signals other than image signals
H04N 25/766 - Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
A delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect a changed level; and at least one digital output circuit configured to generate an event output under the condition of the changed level. The sensor circuit is configured to change an analogue function of its read-out characteristics to generate a respective changed VSIG.
H04N 25/703 - SSIS architectures incorporating pixels for producing signals other than image signals
H04N 25/766 - Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
An image sensor comprises an arrangement of pixels, the pixels including an acquisition circuit each, the acquisition circuit including: a sensor circuit configured to generate a sensor signal (VLOG) depending on a light signal illuminating a photosensor of the pixel; a storage circuit configured to store during a storage interval a stored signal (VSTORE) proportional to the sensor signal (VLOG); and a comparator circuit configured to generate after the refresh interval a comparator signal (VCOMP) depending on the sensor signal (VLOG) and the stored signal (VSTORE). A method of operating an image sensor comprises steps of generating a sensor signal (VLOG) depending on a light signal illuminating a photosensor of the pixel, storing during a storage interval a stored signal (VSTORE) proportional to the sensor signal (VLOG) and generating after the refresh interval a comparator signal (VCOMP) depending on the sensor signal (VLOG) and the stored signal (VSTORE).
H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array
H04N 25/778 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
8.
IMAGE SENSOR WITH CONFIGURABLE PIXEL CIRCUIT AND METHOD
The present disclosure relates to an image sensor comprising a plurality of pixel circuits each comprising a photodiode connected between ground and a floating diffusion (FD) node, a reset transistor (MRST) connected between a first voltage supply and the floating diffusion (FD) node, and a source follower transistor (MSF), wherein its drain is connected to a second voltage supply, the gate is connected to a floating diffusion (FD) node and the source is connected to a row select transistor (MSEL). The row select transistor (MSEL) is connected between the source of the source follower transistor (MSF) and a common column output. Each pixel circuit is configured to output an output signal corresponding to a light incident on the photodiode. Each pixel circuit includes at least one additional transistor for configuring each pixel circuit to selectively output a linear integration signal or a logarithmic signal.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
9.
DELTA IMAGE SENSOR WITH DIGITAL PIXEL STORAGE USING DIFFERENT RAMPS FOR STORAGE AND COMPARISON
The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one single slope analogue to digital conversion, A/D, circuit, preferably at least one single slope A/D circuit (12) configured to convert a current VSIG to a digital signal, wherein the A/D circuit (12) is configured to use one of a plurality of ramps for the analogue to digital conversion; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG, being generated by using a storage ramp; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG, being generated by using a comparison ramp, to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/341 - Extracting pixel data from an image sensor by controlling scanning circuits, e.g. by modifying the number of pixels having been sampled or to be sampled
The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. The sensor circuit is configured to change an analogue function of its read-out characteristics to generate a respective changed VSIG.
The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one preferably single slope analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. The repeat rate of the analogue to digital conversion is chosen from one or more repeat rates in correspondence with a light source modulation of a light signal illuminating the photosensor.
H04N 5/341 - Extracting pixel data from an image sensor by controlling scanning circuits, e.g. by modifying the number of pixels having been sampled or to be sampled
12.
DELTA IMAGE SENSOR WITH EXTERNALLY WRITEABLE DIGITAL PIXEL STORAGE
The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. A digital representation may be externally written to the digital storage circuit of the at least one pixel.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/341 - Extracting pixel data from an image sensor by controlling scanning circuits, e.g. by modifying the number of pixels having been sampled or to be sampled
13.
DELTA IMAGE SENSOR WITH DIGITAL PIXEL STORAGE WITH EVENT OUTPUT WITH MAGNITUDE AND DIRECTION
Delta image sensor with digital pixel storage with event output with magnitude and direction The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. The event output comprises a magnitude of the level change and preferably a direction of the level change.
H04N 5/341 - Extracting pixel data from an image sensor by controlling scanning circuits, e.g. by modifying the number of pixels having been sampled or to be sampled
14.
DELTA IMAGE SENSOR WITH DIGITAL PIXEL STORAGE WITH LONG TERM INTERRUPTABLE OPERATION
The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level.
H04N 5/341 - Extracting pixel data from an image sensor by controlling scanning circuits, e.g. by modifying the number of pixels having been sampled or to be sampled
An image sensor comprises an arrangement of pixels, the pixels including an acquisition circuit (1) each, the acquisition circuit (1) including: a sensor circuit (11) configured to generate a sensor signal (VLOG) depending on a light signal illuminating a photosensor of the pixel; a storage circuit (12) configured to store during a storage interval a stored signal (VSTORE) proportional to the sensor signal (VLOG); and a comparator circuit (13) configured to generate after the refresh interval a comparator signal (VCOMP) depending on the sensor signal (VLOG) and the stored signal (VSTORE). A method of operating an image sensor comprises steps of generating a sensor signal (VLOG) depending on a light signal illuminating a photosensor of the pixel, storing during a storage interval a stored signal (VSTORE) proportional to the sensor signal (VLOG) and generating after the refresh interval a comparator signal (VCOMP) depending on the sensor signal (VLOG) and the stored signal (VSTORE).
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/374 - Addressed sensors, e.g. MOS or CMOS sensors
patents
